TW201630071A - Substrate processing apparatus - Google Patents

Abstract

A substrate processing apparatus includes: a mounting table configured to place a substrate thereon to be rotatable around an axis; an antenna provided in a first region; and a reaction gas supply section configured to supply a reaction gas to the first region. The reaction gas supply section includes an inside injection port and an outside injection port. The inside injection port is provided at a position closer to the axis than an antenna region when viewed in the axis direction, and configured to inject the reaction gas in a direction getting away from the axis. The outside injection port is provided at a position farther from the axis than the antenna region when viewed in the axis direction, and configured to inject the reaction gas in a direction approaching the axis at a flow rate controlled independently of that of the reaction gas injected from the inside injection port.

Description

Substrate processing device

Various aspects and embodiments of the present invention relate to a substrate processing apparatus.

As for the method of performing film formation on a substrate, a plasma enhanced Atomic Layer Deposition (PE-ALD) method is known. The PE-ALD method chemically adsorbs a precursor gas containing a constituent element of a thin film on a substrate by exposing the substrate to a precursor gas. Next, the substrate is exposed to a flushing gas to remove excess precursor gas that is chemically adsorbed on the substrate. Further, a desired film is formed on the substrate by exposing the substrate to a plasma containing a reaction gas of constituent elements of the film. The PE-ALD method repeats the step of producing a film on the substrate containing atoms or molecules contained in the precursor gas.

As far as a device for realizing the PE-ALD method is concerned, a semi-batch film forming device is known. In the semi-batch type film forming apparatus, a region in which a precursor gas is supplied and a region in which a plasma generating a reaction gas are generated are provided in individual regions in the processing chamber, and the substrate is sequentially passed through the regions to form a film having a desired thickness. Produced on the substrate.

The film forming apparatus thus includes a mounting table, a shower head, and a plasma generating portion. The stage supports the substrate and rotates around the rotation axis. The shower head and the plasma generating unit are disposed opposite to the mounting table and arranged in the circumferential direction. The shower head has a substantially fan-shaped planar shape and supplies precursor gas to the substrate to be processed passing under. The plasma generating portion supplies the microwave to the approximately sector-shaped antenna from the waveguide, and supplies the reaction gas from the antenna region, thereby generating a plasma of the reaction gas in the antenna region. An exhaust port is provided around the shower head and around the plasma generating portion, and an injection port for supplying the flushing gas is provided on the periphery of the shower head. [Prior Art Document] [Patent Document] Please refer to International Publication No. 2013/122043. [Summary of the Invention]

A substrate processing apparatus according to the present invention includes: a mounting table on which a substrate to be processed is placed, and is rotatable about the axis to move the substrate to be processed around the axis; and the antenna is disposed in the plasma processing region. One of a plurality of regions sequentially passing through the substrate to be processed which is circumferentially moved toward the axis by the rotation of the mounting table; and a gas supply portion that supplies the reaction gas to the plasma processing region And the gas supply unit has an inner injection port that is disposed between the antenna and the axis when viewed in the axial direction, and is away from the axis from a position closer to the axis than the antenna. The injection reaction gas; and the outer injection port are disposed at a position farther from the axis than the antenna when viewed from the axial direction, and are ejected in a direction close to the axis from a position farther from the axis than the antenna. a reaction gas, the flow rate of the reaction gas and the flow rate of the reaction gas injected from the inner injection port are unique Control.

The above summary is for illustrative purposes only and is not intended to be limiting in any way. The above-described illustrative aspects, embodiments, features, and additional aspects, embodiments, and features are more apparent from the detailed description of the drawings.

The following detailed description refers to additional figures that form part of the specification. The illustrative embodiments described in the detailed description, drawings, and claims are not intended to be limiting. Other embodiments may be utilized, or other variants may be practiced without departing from the spirit or scope of the invention.

[Problems to be Solved by the Invention] In the semi-batch type film forming apparatus described in the above document, the film thickness distribution on the substrate from the rotation center of the mounting table to the radial direction of the mounting table is smaller than the rotation direction of the mounting table. The film thickness is distributed and the uniformity is lower. Therefore, it is desired to improve the controllability of the film thickness distribution such as the film thickness uniformity on the substrate from the rotation center of the mounting table to the radial direction of the mounting table in the half batch type film forming apparatus. [The way to solve the problem]

An embodiment of the substrate processing apparatus disclosed in the present invention includes a mounting table, an antenna, and a gas supply unit. The stage is placed on the substrate to be processed, and is set to be rotatable about the axis so that the periphery of the axis of the substrate to be processed is moved. The antenna is provided in a plasma processing region, which is one of a plurality of regions sequentially passing through the substrate to be processed which is moved circumferentially about the axis by the rotation of the mounting table. The gas supply unit supplies the reaction gas to the plasma processing region. The gas supply unit has an inner injection port and an outer injection port. In the case of viewing from the axial direction, the inner injection port is provided between the antenna and the axis, and the reaction gas is ejected in a direction away from the axis from a position closer to the axis than the antenna. When viewed from the axial direction, the outer injection port is disposed at a position farther from the axis than the antenna, and the reaction gas is ejected from a position farther from the axis than the antenna toward the axis, and the flow rate of the reaction gas is from the inner injection port. The flow rate of the injected reaction gas is independently controlled.

Further, in an embodiment of the substrate processing apparatus according to the present invention, when viewed from the axial direction, the inner injection port and the outer injection port discharge the reaction gas to a region where the antenna is provided.

Further, in an embodiment of the present invention, the inside injection port and the outside injection port spray the reaction gas in a direction parallel to the surface of the substrate to be processed placed on the mounting table.

Further, in an embodiment of the substrate processing apparatus according to the present invention, the gas supply unit has a plurality of inner injection ports and outer injection ports.

Further, in an embodiment of the present invention, the antenna is provided in plurality in the plasma processing region. The inner injection port and the outer injection port are respectively assigned one or more at each antenna, and the flow rate of the reaction gas injected by each antenna can be independently controlled.

Further, in one embodiment of the present invention, the substrate processing apparatus further includes an exhaust region that is provided along a circumference of the mounting table and that is exhausted by the plurality of exhaust holes. When viewed from the axial direction, the exhaust portion is provided in a region different from the angular region in which the antenna is provided.

Further, in an embodiment of the present invention, the exhaust region is provided along the periphery of the mounting table.

Further, in one embodiment of the present invention, the amount of exhaust gas from each of the exhaust regions is the same. [Effects of the Invention]

According to an aspect of the substrate processing apparatus disclosed in the present invention, it is possible to improve the controllability of the film thickness distribution on the substrate from the rotation center of the mounting table to the radial direction of the mounting table.

Hereinafter, embodiments of the substrate processing apparatus disclosed in the present invention will be described in detail based on the drawings. Further, the invention disclosed in the present invention is not limited by the embodiment. Each embodiment can be appropriately combined without departing from the scope of the processing.

BEST MODE FOR CARRYING OUT THE INVENTION FIG. 1 is a cross-sectional view showing an example of a substrate processing apparatus 10. Fig. 2 is a schematic view showing an example of the substrate processing apparatus 10 in the case of viewing from above. The A-A cross section in Fig. 2 is shown in Fig. 1. 3 and 4 are enlarged cross-sectional views showing an example of the left side portion of the axis X in Fig. 1. Figure 5 shows an example of the bottom surface of unit U. Figure 6 is an enlarged cross-sectional view showing an example of the right side portion of the axis X in Figure 1. The substrate processing apparatus 10 shown in FIGS. 1 to 6 mainly includes a processing container 12, a mounting table 14, a first gas supply unit 16, an exhaust unit 18, a second gas supply unit 20, and a plasma generating unit 22.

As shown in Fig. 1, the processing container 12 has a lower member 12a and an upper member 12b. The lower member 12a has a slightly cylindrical shape with an upper opening, and is formed with a concave portion including a side wall and a bottom wall forming the processing chamber C. The upper member 12b is provided with a substantially cylindrical lid body, and the upper opening of the concave portion of the lower member 12a is closed to form the processing chamber C. An outer peripheral portion between the lower member 12a and the upper member 12b is provided with an elastic sealing member for sealing the processing chamber C, for example, an O-ring is provided.

The substrate processing apparatus 10 has a mounting table 14 inside the processing chamber C formed by the processing container 12. The mounting table 14 is rotationally driven about the axis X by the drive mechanism 24. The drive mechanism 24 has a drive unit 24a such as a motor and a rotary shaft 24b, and is attached to the lower member 12a of the processing container 12.

The rotating shaft 24b extends to the inside of the processing chamber C with the axis X as a central axis. The rotating shaft 24b is rotated about the axis X by the driving force transmitted from the driving device 24a. The mounting table 14 supports the central portion by the rotating shaft 24b. Thereby, the mounting table 14 rotates with the rotation of the rotating shaft 24b centering on the axis X. Further, between the lower member 12a of the processing container 12 and the drive mechanism 24, an elastic sealing member such as an O-ring that seals the processing chamber C is provided.

The substrate processing apparatus 10 has a heater 26 under the mounting table 14 inside the processing chamber C for heating the substrate W which is the substrate to be processed placed on the mounting table 14. Specifically, the heater 26 heats the substrate W by heating the mounting table 14.

As shown in FIG. 2, the processing container 12 is a substantially cylindrical container having the axis X as a central axis, and has a processing chamber C therein. The unit U provided with the injection portion 16a is provided in the processing chamber C. The processing container 12 is formed, for example, by using a metal such as Al (aluminum) which is subjected to plasma treatment such as alumite treatment or Y2O3 (yttria) spraying treatment on the inner surface. The substrate processing apparatus 10 has a plurality of plasma generating portions 22 in the processing container 12.

Each of the plasma generating units 22 includes an antenna 22a that outputs microwaves at an upper portion of the processing container 12. In the present embodiment, the outer shape of each antenna 22a is a triangle having rounded corners. Further, in the case of viewing from the direction of the axis X, the outer shape of each antenna 22a has three straight sides which are included in the sides of the triangle surrounding the outer shape of the antenna 22a. In the present embodiment, when viewed from the direction of the axis X, the triangle surrounding the outer shape of the antenna 22a is, for example, an equilateral triangle, and the angle formed by the adjacent sides is, for example, 60°. In FIG. 2, three antennas 22a are provided in the upper portion of the processing container 12. However, the number of the antennas 22a is not limited thereto, and two or less may be used, and even four or more may be used.

As shown in FIG. 2, for example, the substrate processing apparatus 10 includes a mounting table 14 having a plurality of substrate mounting regions 14a on the top surface. The mounting table 14 is a substantially disk-shaped member having the axis X as a central axis. On the top surface of the mounting table 14, a plurality of (five in the example of FIG. 2) substrate mounting regions 14a on which the substrate W is placed are formed concentrically around the axis X. When the substrate W is placed in the substrate mounting region 14a and the mounting table 14 is rotated, the substrate mounting region 14a supports the substrate W so that the substrate W does not shift. The substrate mounting region 14a and the substantially circular substrate W are approximately circular recesses having substantially the same shape. The diameter of the concave portion of the substrate mounting region 14a is approximately the same as the diameter W1 of the substrate W placed on the substrate mounting region 14a. In other words, the diameter of the concave portion of the substrate mounting region 14a is such that the substrate W is fixed to the extent that the substrate W is placed in the concave portion, and the substrate W is not caused by the rotation of the mounting table 14 The centrifugal force moves from the fitting position.

The substrate processing apparatus 10 includes a gate valve G that carries the substrate W into the processing chamber C and carries the substrate W out of the processing chamber C via a conveying device such as a robot arm at the outer edge of the processing container 12 . Further, the substrate processing apparatus 10 includes an exhaust portion 22h along the periphery of the mounting table 14 below the outer edge of the mounting table 14. The exhaust unit 22h is connected to the exhaust unit 52. When viewed from the direction of the axis X, the exhaust portion 22h has a plurality of exhaust holes in a region of the angle θ2 adjacent to the region where the angle θ1 of the antenna 22a is provided in the rotational direction of the mounting table 14. The substrate processing apparatus 10 controls the operation of the exhaust apparatus 52, and exhausts the gas in the processing chamber C by the exhaust holes, thereby maintaining the pressure in the processing chamber C at the target pressure.

The processing chamber C includes, for example, as shown in FIG. 2, a first region R1 and a second region R2 arranged on a circumference centered on the axis X. The substrate W placed on the substrate mounting region 14a sequentially passes through the first region R1 and the second region R2 in accordance with the rotation of the mounting table 14. In the present embodiment, when viewed from above, the mounting table 14 shown in Fig. 2 is rotated in the clockwise direction, for example. The second region R2 is an example of a plasma processing region.

The first gas supply unit 16 includes an inner gas supply unit 161, an intermediate gas supply unit 162, and an outer air supply unit 163, as shown in FIGS. 3 and 4, for example. Further, as shown in FIGS. 3 and 4, for example, as shown in FIG. 3 and FIG. 4, the first region R1 is provided with a unit U for supplying, flushing, and exhausting gas. The unit U has a configuration in which the first member M1, the second member M2, the third member M3, and the fourth member M4 are stacked in this order. The unit U is attached to the processing container 12 in such a manner as to abut against the bottom surface of the upper member 12b of the processing container 12.

For example, as shown in FIGS. 3 and 4, the unit U has a gas supply passage 161p, a gas supply passage 162p, and a gas supply passage 163p that penetrate the second member M2 to the fourth member M4. The gas supply path 161p is connected to the gas supply path 121p whose upper end is provided in the upper member 12b of the processing container 12. The gas supply path 121p is connected to the gas supply source 16g of the precursor gas via the flow rate controller 161c such as the valve 161v and the mass flow controller. Further, the lower end of the gas supply path 161p is connected to the buffer space 161d which is formed between the first member M1 and the second member M2, and is surrounded by, for example, an elastic member 161b such as an O-ring. The buffer space 161d is connected to the injection port 16h of the inner injection portion 161a provided in the first member M1.

Further, the gas supply path 162p is connected to the gas supply path 122p whose upper end is provided in the upper member 12b of the processing container 12. The gas supply path 122p is connected to the gas supply source 16g of the precursor gas via the flow rate controller 162c such as the valve 162v and the mass flow controller. Further, the lower end of the gas supply path 162p is connected to the buffer space 162d which is formed between the first member M1 and the second member M2 and is surrounded by, for example, an elastic member 162b such as an O-ring. The buffer space 162d is connected to the ejection opening 16h of the intermediate ejection portion 162a provided in the first member M1.

Further, the gas supply path 163p is connected to the gas supply path 123p whose upper end is provided in the upper member 12b of the processing container 12. The gas supply path 123p is connected to the gas supply source 16g of the precursor gas via the flow rate controller 163c such as the valve 163v and the mass flow controller. Further, the lower end of the gas supply path 163p is connected to the buffer space 163d which is formed between the first member M1 and the second member M2 and is surrounded by, for example, an elastic member 163b such as an O-ring. The buffer space 163d is connected to the ejection port 16h of the outer side ejection portion 163a provided in the first member M1.

The buffer space 161d of the inside air supply unit 161, the buffer space 162d of the intermediate gas supply unit 162, and the buffer space 163d of the outside air supply unit 163 form an independent space as shown in, for example, FIGS. 3 and 4 . Further, the flow rate of the driving gas before the respective buffer spaces is independently controlled by the flow controller 161c, the flow controller 162c, and the flow controller 163c.

The unit U forms a gas supply path 20r penetrating the fourth member M4 as shown in Figs. 3 and 4, for example. The gas supply path 20r is connected to the gas supply path 12r whose upper end is provided in the upper member 12b of the processing container 12. The gas supply path 12r is connected to the gas supply source 20g of the flushing gas via the valve 20v and the flow rate controller 20c.

The lower end of the gas supply path 20r is connected to a space 20d provided between the bottom surface of the fourth member M4 and the top surface of the third member M3. Further, the fourth member M4 forms a recess in which the first member M1 to the third member M3 are housed. A gap 20p is provided between the inner side surface of the fourth member M4 forming the recess and the outer side surface of the third member M3. The gap 20p is connected to the space 20d. The lower end of the gap 20p functions as the injection port 20a.

In the unit U, for example, as shown in FIGS. 3 and 4, the exhaust passage 18q penetrating the third member M3 and the fourth member M4 is formed. The exhaust passage 18q is connected to the exhaust passage 12q whose upper end is attached to the upper member 12b of the processing container 12. The exhaust passage 12q is connected to an exhaust device 34 such as a vacuum pump. Further, the exhaust passage 18q is connected to a space 18d which is provided at a lower end between the bottom surface of the third member M3 and the top surface of the second member M2.

The third member M3 includes a recess in which the first member M1 and the second member M2 are housed. A gap 18g is provided between the inner side surface of the third member M3 and the outer surface of the first member M1 and the second member M2, and the inner side surface of the third member M3 constitutes a recess provided in the third member M3. The space 18d is connected to the gap 18g. The lower end of the gap 18g functions as the exhaust port 18a.

The bottom surface of the unit U, that is, the surface facing the mounting table 14, for example, as shown in FIG. 5, the ejection portion 16a is provided along the direction of the disengagement axis X, that is, the Y-axis direction. The region in which the ejection portion 16a in the region included in the processing chamber C faces is the first region R1. The injection portion 16a injects the precursor gas onto the substrate W on the mounting table 14. For example, as shown in FIG. 5, the injection portion 16a has an inner injection portion 161a, an intermediate injection portion 162a, and an outer injection portion 163a.

For example, as shown in FIG. 5, the inner jetting portion 161a is formed in the inner annular region A1 which is a region included in the bottom surface of the unit U in the annular region in the range from r1 to r2, which is the distance from the axis X. Further, the intermediate injection portion 162a is formed in the intermediate annular region A2 which is a region included in the bottom surface of the unit U in the annular region in which the distance from the axis X is in the range of r2 to r3. Further, the outer injection portion 163a is formed in the outer annular region A3 which is a region included in the bottom surface of the unit U in the annular region in which the distance from the axis X is in the range of r3 to r4.

For example, as shown in FIG. 5, the length L of the injection portion 16a formed on the bottom surface of the unit U in the Y-axis direction, that is, the length L from r1 to r4 is longer than the length of the substrate W of the diameter W1 on the axis X side. The direction is longer than the predetermined distance ΔL, and the opposite direction on the axis X side is longer than the predetermined distance ΔL.

The inner injection portion 161a, the intermediate injection portion 162a, and the outer injection portion 163a include a plurality of injection ports 16h as shown in FIG. 5, for example. The precursor gas is ejected from the respective ejection ports 16h to the first region R1. The flow rate of the precursor gas injected from the injection port 16h of each of the inner injection portion 161a, the intermediate injection portion 162a, and the outer injection portion 163a to the first region R1 is controlled by the flow rate controller 161c, the flow rate controller 162c, and the flow rate. The device 163c is independently controlled. The precursor gas is supplied to the first region R1, whereby the atoms or molecules of the precursor gas are chemically adsorbed on the surface of the substrate W that has passed through the first region R1. The precursor gas is, for example, DCS (dichlorodecane), monochlorosilane, trichlorodecane, hexachlorodecane or the like.

For example, as shown in FIGS. 3 and 4, the upper portion of the first region R1 is provided with an exhaust port 18a of the exhaust portion 18 so as to face the top surface of the mounting table 14. The exhaust port 18a is formed on the bottom surface of the unit U so as to surround the periphery of the injection portion 16a as shown, for example, in FIG. The exhaust port 18a exhausts the gas in the processing chamber C through the exhaust port 18a by the operation of the exhaust device 34 such as a vacuum pump.

Above the first region R1, for example, as shown in Figs. 3 and 4, the injection port 20a of the second gas supply portion 20 is provided so as to face the top surface of the mounting table 14. The injection port 20a is formed on the bottom surface of the unit U so as to surround the periphery of the exhaust port 18a as shown, for example, in FIG. The second gas supply unit 20 injects the flushing gas into the first region R1 via the injection port 20a. The flushing gas system injected by the second gas supply unit 20 is, for example, an inert gas such as Ar (argon). By spraying the flushing gas onto the surface of the substrate W, atoms or molecules (residual gas components) of the precursor gas adsorbed excessively before the substrate W are removed from the substrate W. Thereby, an atomic layer or a molecular layer of an atom or a molecule to which a precursor gas is chemically adsorbed is formed on the surface of the substrate W.

The unit U injects the flushing gas from the injection port 20a, and exhausts the flushing gas by the exhaust port 18a along the surface of the mounting table 14. Thereby, the unit U suppresses leakage of the precursor gas supplied to the first region R1 to the outside of the first region R1. Further, since the unit U injects the flushing gas from the injection port 20a and exhausts the gas through the exhaust port 18a along the surface of the mounting table 14, the radicals of the reaction gas or the reaction gas supplied to the second region R2 are suppressed. Invades into the first area R1. That is, the unit U isolates the first region R1 and the second region R2 by the injection of the flushing gas from the second gas supply portion 20 and the exhaust gas from the exhaust portion 18.

As shown in FIG. 6 , for example, as shown in FIG. 6 , the substrate processing device 10 includes an electrode generating portion 22 that is disposed on the top surface of the mounting table 14 in the opening AP located above the second region R2 . The plasma generating unit 22 includes an antenna 22a, a coaxial waveguide 22b that supplies microwaves to the antenna 22a, and a reaction gas supply unit 22c that supplies the reaction gas to the second region R2. In the present embodiment, the upper member 12b is formed with, for example, three openings AP, and the substrate processing apparatus 10 includes, for example, three antennas 22a.

The plasma generating unit 22 supplies microwaves to the second region R2 from the antenna 22a and the coaxial waveguide 22b, and supplies the reaction gas to the second region R2 from the reaction gas supply portion 22c, thereby generating a reaction gas in the second region R2. Plasma. Further, the plasma generating unit 22 performs a plasma treatment on the atomic layer or the molecular layer chemically adsorbed on the substrate W. In the present embodiment, a nitrogen-containing gas is used as the reaction gas, and the plasma generating portion 22 nitifies the atomic layer or the molecular layer of the substrate W by chemical adsorption. As the reaction gas, for example, a nitrogen-containing gas such as N 2 (nitrogen) or NH 3 (ammonia) can be used.

The plasma generating unit 22, for example, as shown in FIG. 6, hermetically arranges the antenna 22a to close the opening AP. The antenna 22a has a sky plate 40, a slot plate 42, and a slow wave plate 44. The sky plate 40 is a slightly equilateral triangular member having a rounded corner formed of a dielectric material, for example, formed of alumina ceramic or the like. The top plate 40 is supported by the upper member 12b such that the bottom surface thereof is exposed from the opening AP formed by the upper member 12b of the processing container 12 in the second region R2.

A slot plate 42 is provided on the top surface of the top plate 40. The slot plate 42 is formed of a metal member having a substantially right triangular plate shape. The slot plate 42 is formed with a plurality of slot pairs. Each slot pair contains two slot holes that are orthogonal to each other.

The top surface of the slot plate 42 is provided with a slow wave plate 44. The slow wave plate 44 is a member having a substantially equilateral triangle formed of a dielectric material, for example, an alumina ceramic or the like. The slow wave plate 44 is provided with a slightly cylindrical opening for arranging the outer conductor 62b of the coaxial waveguide 22b.

A metal cooling plate 46 is provided on the top surface of the slow wave plate 44. The cooling plate 46 cools the antenna 22a via the slow wave plate 44 by circulating the refrigerant in the flow path formed therein. The cooling plate 46 presses the top surface of the slow wave plate 44 by a spring or the like (not shown), and the bottom surface of the cooling plate 46 is in close contact with the top surface of the slow wave plate 44.

The coaxial waveguide 22b includes an inner conductor 62a and an outer conductor 62b. The inner conductor 62a penetrates the opening of the slow wave plate 44 and the opening of the slot plate 42 from above the antenna 22a. The outer conductor 62b is provided to surround the inner conductor 62a with a gap between the outer circumferential surface of the inner conductor 62a and the inner circumferential surface of the outer conductor 62b. The lower end of the outer conductor 62b is connected to the opening of the cooling plate 46. Further, the antenna 22a can also function as an electrode. Alternatively, an electrode provided in the processing container 12 may be used as the antenna 22a.

The substrate processing apparatus 10 has a waveguide 60 and a microwave generator 68. The microwave generated by the microwave generator 68, for example, about 2.45 GHz, is transmitted to the coaxial waveguide 22b via the waveguide 60, and is transmitted to the gap between the inner conductor 62a and the outer conductor 62b. Moreover, the microwaves transmitted in the slow wave plate 44 are transmitted from the slot holes of the slot plate 42 to the sky plate 40, and are radiated from the sky plate 40 to the second region R2.

The reaction gas is supplied from the reaction gas supply unit 22c to the second region R2. The reaction gas supply unit 22c has a plurality of inner injection ports 50b and a plurality of outer injection ports 51b. Each of the inner injection ports 50b is connected to the gas supply source 50g of the reaction gas via a valve 50v and a flow rate control unit 50c such as a mass flow controller.

Each of the inner injection ports 50b is provided on the bottom surface of the upper member 12b of the processing container 12, as shown in Figs. 2 and 6, for example. Further, when viewed from the direction of the axis X, the position of each of the inner injection ports 50b is, for example, as shown in Figs. 2 and 6, which is closer to the axis X than the region of the antenna 22a. In the present embodiment, when viewed from the direction of the axis X, the region of the antenna 22a is, for example, a region in which the antenna 40a of the antenna 22a is disposed in the second region R2.

The plurality of inner injection ports 50b are distributed to the respective antennas 22a in a predetermined number. Further, a predetermined number of inner injection ports 50b allocated to the respective antennas 22a are viewed from the direction of the axis X as viewed in the direction of the axis X, and the region of the angle θ1 at which the antenna 22a is provided in the rotation direction of the stage 14 is along The mounting table 14 is disposed in the rotation direction. In the present embodiment, for example, as shown in Fig. 2, three inner injection ports 50b are allocated to the respective antennas 22a. Further, the three inner injection ports 50b are arranged in an angular range of 60° which is a region where the angle θ1 of the antenna 22a is provided in the rotation direction of the mounting table 14, and is, for example, dispersed at intervals of 20°.

Further, each of the inner injection ports 50b is caused to flow the reaction gas supplied from the gas supply source 50g to the second region R2 below the antenna 22a in the direction away from the axis X via the valve 50v and the flow rate control unit 50c. In the present embodiment, each of the inner injection ports 50b ejects the reaction gas to the planar direction of the mounting table 14, for example. Each of the inner injection ports 50b ejects, for example, a reaction gas into a direction parallel to the surface of the substrate W placed on the substrate placement region 14a of the mounting table 14.

Each of the outer injection ports 51b is connected to the gas supply source 50g of the reaction gas via the flow rate control unit 51c such as the valve 51v and the mass flow controller. Each of the outer injection ports 51b is provided on the bottom surface of the upper member 12b of the processing container 12, as shown in Figs. 2 and 6, for example. Further, for example, as shown in FIGS. 2 and 6, when viewed from the direction of the axis X, the position of each of the outer injection ports 51b is set to be farther from the axis X than the region of the antenna 22a.

Further, a plurality of outer injection ports 51b are distributed to the respective antennas 22a in a predetermined number. Further, a predetermined number of outer injection ports 51b allocated to the respective antennas 22a are, as shown in FIG. 2, as viewed in the direction of the axis X, along the region where the angle θ1 of the antenna 22a is provided in the rotational direction of the stage 14 along The mounting table 14 is disposed in the rotation direction. In the present embodiment, 37 outer injection ports 51b are allocated to the respective antennas 22a. Further, the 37 outer injection ports 51b are disposed in an angular range of 60° which is a region where the angle θ1 of the antenna 22a is provided in the rotation direction of the mounting table 14, for example, at an interval of about 1.6°.

Further, each of the outer injection ports 51b injects the reaction gas supplied from the gas supply source 50g to the second region R2 below the antenna 22a in the direction toward the axis X via the valve 51v and the flow rate control portion 51c. In the present embodiment, each of the outer injection ports 51b ejects the reaction gas to the planar direction of the mounting table 14, for example. Each of the outer injection ports 51b ejects, for example, a reaction gas into a direction parallel to the surface of the substrate W placed on the substrate placement region 14a of the mounting table 14. Further, the inner injection port 50b and the outer injection port 51b are attached to the bottom surface of the upper member 12b as a separate member from the upper member 12b or the antenna 22a that closes the processing container 12 from above, as shown in Fig. 6, for example. Thereby, the inner injection port 50b and the outer injection port 51b can be easily removed from the upper member 12b or the antenna 22a, and the maintenance of the inner injection port 50b and the outer injection port 51b becomes easy.

Further, in the present embodiment, the flow rate of the reaction gas injected from the inner injection port 50b and the outer injection port 51b is independently controlled by the flow rate control unit 50c and the flow rate control unit 51c. Further, the flow rate control unit 50c and the flow rate control unit 51c may be provided in each of the antennas 22a, and the flow rate of the reaction gas injected from the inner injection port 50b and the outer injection port 51b may be independently controlled for each antenna 22a.

The plasma generating unit 22 supplies the reaction gas to the second region R2 via the plurality of inner injection ports 50b and the plurality of outer injection ports 51b, and radiates the microwaves to the second region R2 via the antenna 22a. Thereby, the plasma generating unit 22 generates a plasma of the reaction gas in the second region R2.

For example, as shown in FIG. 2, the exhaust portion 22h is provided on the periphery of the mounting table 14. For example, as shown in FIG. 6, the exhaust portion 22h has a groove portion 222 that is open at the upper portion, and a lid portion 221 that is provided at an upper portion of the groove portion 222. The groove portion 222 is connected to the exhaust device 52. When viewed from the direction of the axis X, the lid portion 221 is, for example, in the substrate processing apparatus 10 shown in FIG. 2, at an angle θ2 adjacent to the region where the angle θ1 of the antenna 22a is provided in the rotation direction of the mounting table 14. The area, that is, the exhaust area 220h has a plurality of exhaust holes. Further, among the regions where the angle θ1 of the antenna 22 is provided, the cover portion 221 is not provided with a vent hole.

Further, a spacer 220 is provided below the outer side ejection opening 51b and on the cap portion 221 . When viewed from the direction of the axis X, the spacer 220 is provided on the periphery of the mounting base 14 and is provided in a region where the angle θ1 of the antenna 22a is provided in the rotation direction of the mounting table 14. The spacer 220 has a thickness approximately the same as the height from the top surface of the lid portion 221 to the top surface of the mounting table 14, as shown in FIG. The spacer 220 is below the outer ejection opening 51b, and suppresses an increase in the gas flow rate due to the difference in height between the mounting table 14 and the lid portion 221.

In each of the exhaust regions 220h, the exhaust portion 22h is operated by the exhaust device 52, and the plurality of exhaust holes provided in the lid portion 221 exhaust the gas in the processing chamber C via the groove portion 222. Further, the exhaust holes provided in the lid portion 221 adjust the positions, sizes, and numbers of the exhaust holes provided in the respective exhaust regions 220h so that the exhaust amounts from the respective exhaust regions 220h are approximately the same.

The substrate processing apparatus 10 includes, for example, a control unit 70 for controlling each component of the substrate processing apparatus 10 as shown in FIG. 1 . The control unit 70 may include a control device such as a CPU (Central Processing Unit), a memory device such as a memory, and a computer such as an input device. The control unit 70 controls each component of the substrate processing apparatus 10 by the CPU operating in accordance with a control program stored in the memory.

The control unit 70 transmits a control signal for controlling the rotational speed of the mounting table 14 to the drive device 24. Further, the control unit 70 transmits a control signal for controlling the temperature of the substrate W to the power source to which the heater 26 is connected. Further, the control unit 70 transmits a control signal for controlling the flow rate of the precursor gas to the valves 161v to 163v and the flow rate controllers 161c to 163c. Further, the control unit 70 transmits a control signal for controlling the amount of exhaust of the exhaust unit 34 to which the exhaust port 18a is connected to the exhaust unit 34.

Further, the control unit 70 transmits a control signal for controlling the flow rate of the flushing gas to the valve 20v and the flow rate controller 20c. Further, the control unit 70 transmits a control signal for controlling the transmission power of the microwave to the microwave generator 68. Further, the control unit 70 transmits a control signal for controlling the flow rate of the reaction gas to the valve 50v, the valve 51v, the flow rate control unit 50c, and the flow rate control unit 51. Further, the control unit 70 transmits a control signal for controlling the amount of exhaust gas from the exhaust unit 22h to the exhaust unit 52.

By the substrate processing apparatus 10 configured as described above, the precursor gas is ejected from the first gas supply unit 16 onto the substrate W, and the precursor gas is excessively chemisorbed from the substrate W by the second gas supply unit 20. Further, the substrate W is exposed to the plasma of the reaction gas generated by the plasma generating portion 22. The substrate processing apparatus 10 repeats the above operation on the substrate W, whereby a film having a predetermined thickness is formed on the substrate W.

Here, the substrate processing apparatuses 10-1 to 10-3, which are embodiments of the substrate processing apparatus 10, will be described. Fig. 7 is a schematic view showing an example of the substrate processing apparatus 10-1 of the first embodiment in the case of viewing from above. Fig. 8 is a cross-sectional view showing an example of the substrate processing apparatus 10-1 in the first embodiment. Fig. 8 shows a B-B cross section of the substrate processing apparatus 10-1 shown in Fig. 7.

In the substrate processing apparatus 10-1 of the first embodiment, for example, as shown in FIG. 7, each antenna 22a has three inner injection ports 50b on the side closer to the axis X in the region of the antenna 22a. Each of the inner injection ports 50b is provided at a position farther from the axis X than the outer edge of the axis X side of the sun plate 40 of the antenna 22a, as shown in FIG. Each of the inner injection ports 50b, for example, has an arrow as shown in FIG. 8, and ejects the reaction gas to the position on the mounting table 14 through which the edge on the axis X side of the substrate W placed on the substrate mounting region 14a passes. Below.

Further, in the substrate processing apparatus 10-1 of the first embodiment, as shown in FIG. 7, for example, each of the antennas 22a has three outer ejection openings 51b on the side far from the axis X in the region of the antenna 22a. Each of the outer injection ports 51b is provided at a position closer to the axis X than the outer edge of the sun plate 40 on the side of the axis X of the antenna 22a, as shown in FIG. Each of the outer injection ports 51b, for example, like an arrow shown in FIG. 8, sprays the reaction gas to a position on the mounting table 14 through which the edge of the substrate W placed on the substrate mounting region 14a passes away from the axis X side. Oblique below. Further, in the substrate processing apparatus 10-1 of the first embodiment, the inner injection port 50b and the outer injection port 51b are provided inside the upper member 12b as shown in Fig. 8, for example.

Further, in the substrate processing apparatus 10-1 of the first embodiment, as shown in FIG. 7, for example, the exhaust region 220h of the exhaust portion 22h is provided along the periphery of the mounting table 14. An angle region in which each antenna 22a is provided is, for example, as shown in FIG. 8, and a lid portion 221 in which a plurality of exhaust holes 223 are formed is provided on the groove portion 222. The exhaust unit 22h exhausts the gas in the processing chamber C through the plurality of exhaust holes 223 provided in the lid portion 221 through the groove portion 222 in the respective exhaust regions 220h by the operation of the exhaust device 52.

Fig. 9 is a schematic view showing an example of the substrate processing apparatus 10-2 of the second embodiment in the case of viewing from above. Fig. 10 is a cross-sectional view showing an example of the substrate processing apparatus 10-2 of the second embodiment. Fig. 10 shows a B-B cross section of the substrate processing apparatus 10-2 shown in Fig. 9.

In the substrate processing apparatus 10-2 of the second embodiment, as shown in FIG. 9, for example, each of the antennas 22a has three inner injection ports 50b at a position closer to the axis X than the area of the antenna 22a. Each of the inner injection ports 50b, for example, like an arrow shown in FIG. 10, injects a reaction gas in a direction away from the axis X in the planar direction of the stage 14. Each of the inner injection ports 50b ejects, for example, a reaction gas into a direction parallel to the surface of the substrate W placed on the substrate placement region 14a of the mounting table 14.

Further, in the substrate processing apparatus 10-2 of the second embodiment, as shown in FIG. 9, for example, each of the antennas 22a has 75 outer ejection openings 51b on the side farther from the axis X than the region of the antenna 22a. For each of the antennas 22a, the angle range in which the outer injection ports 51b are provided is 48°. Each of the outer injection ports 51b, for example, like an arrow shown in FIG. 10, injects a reaction gas in a direction close to the axis X along the plane direction of the stage 14. Each of the outer injection ports 51b ejects, for example, a reaction gas into a direction parallel to the surface of the plate W placed on the substrate placement region 14a of the mounting table 14. Further, in the substrate processing apparatus 10-2 of the second embodiment, as shown in FIG. 10, for example, the inner injection port 50b and the outer injection port 51b are attached to the upper member 12b as members other than the upper member 12b or the antenna 22a. Lower part. Thereby, the inner injection port 50b and the outer injection port 51b can be easily removed from the upper member 12b or the antenna 22a, and the maintenance of the inner injection port 50b and the outer injection port 51b becomes easy.

Further, in the substrate processing apparatus 10-2 of the second embodiment, as shown in FIG. 9, for example, the exhaust region 220h of the exhaust portion 22h is provided along the periphery of the mounting table 14. An angle region in which each antenna 22a is provided is, for example, as shown in FIG. 10, and a lid portion 221 in which a plurality of exhaust holes 223 are formed is provided on the groove portion 222. In the substrate processing apparatus 10-2 of the second embodiment, an exhaust region 220h is provided below the outer injection port 51b. In the exhaust portion 22h, in the exhaust region 220h, the gas in the processing chamber C is exhausted through the plurality of exhaust holes 223 provided in the lid portion 221 by the operation of the exhaust device 52 via the groove portion 222.

Fig. 11 is a schematic view showing an example of the substrate processing apparatus 10-3 of the third embodiment in the case of viewing from above. Fig. 12 is a cross-sectional view showing an example of the substrate processing apparatus 10-3 of the third embodiment. Fig. 12 is a cross-sectional view taken along line B-B of the substrate processing apparatus 10-3 shown in Fig. 11.

In the substrate processing apparatus 10-3 of the third embodiment, for example, as shown in FIG. 11, each of the antennas 22a has three inner injection ports 50b at a position closer to the axis X than the area of the antenna 22a. Each of the inner injection ports 50b, for example, an arrow shown in FIG. 12, ejects a reaction gas in a direction away from the axis X in the planar direction of the mounting table 14. Each of the inner injection ports 50b ejects, for example, a reaction gas into a direction parallel to the surface of the substrate W placed on the substrate placement region 14a of the mounting table 14.

Further, in the substrate processing apparatus 10-3 of the third embodiment, as shown in FIG. 11, for example, each of the antennas 22a has 75 outer ejection openings 51b on the side farther from the axis X than the region of the antenna 22a. For each of the antennas 22a, the angle range in which the outer injection ports 51b are provided is 48°. Each of the outer injection ports 51b, for example, an arrow shown in FIG. 12, ejects a reaction gas in a direction approaching the axis X along the plane direction of the mounting table 14. Each of the outer injection ports 51b ejects, for example, a reaction gas into a direction parallel to the surface of the substrate W placed on the substrate placement region 14a of the mounting table 14. Further, even in the substrate processing apparatus 10-3 of the third embodiment, the inner injection port 50b and the outer injection port 51b are attached to the lower portion of the upper member 12b as a separate member from the upper member 12b, as shown in Fig. 12, for example. .

Further, in the substrate processing apparatus 10-3 of the third embodiment, for example, as shown in FIG. 11, the exhaust region 220h of the exhaust portion 22h is provided along the periphery of the mounting table 14. The exhaust region 220h is provided on the peripheral edge of the mounting base 14, and the angular region where the antenna 22a is not provided. Further, in the substrate processing apparatus 10-3 of the third embodiment, the spacer 220 is provided below the outer ejection opening 51b and on the cap portion 221 . The spacer 220 is provided on the periphery of the mounting table 14 and has an angular range of 48° of the outer ejection opening 51b, and has a thickness substantially the same as the height from the top surface of the cover portion 221 to the top surface of the mounting table 14. . The spacer 220 suppresses an increase in the gas flow rate generated by the height difference of the lid portion 221 of the mounting table 14 below the outer injection port 51b.

FIGS. 13 to 18 show an example of the film thickness distribution on the substrate W in the case where the flow rate of the reaction gas and the RDC (Radical Distribution Control) are changed in the first to third embodiments. In each of the antennas 22a, the RDC is expressed by the ratio "the flow rate of the reaction gas injected from the inner injection port 50b", and the flow rate of the reaction gas injected from the inner injection port 50b and the injection from the outer injection port 51b. The ratio of the total flow rate of the flow rate of the reaction gas. In FIGS. 13 to 18, the Y-axis indicates the direction in which the surface of the substrate W is separated from the axis X, and the 0 in the Y-axis indicates the center of the substrate W.

Fig. 13 shows the film thickness distribution of the substrate W in the case where the total flow rate of the reaction gas is 630 sccm and the RDC is 0%. Fig. 14 shows the film thickness distribution of the substrate W in the case where the total flow rate of the reaction gas is 630 sccm and the RDC system is 100%. The mixed gas of the reaction gas system NH3/H2/Ar used in the experiments of Figs. 13 and 14 has an individual flow rate of 86/464/80 sccm.

Fig. 15 shows a film thickness distribution of the substrate W in the case where the total flow rate of the reaction gas is 1730 sccm and the RDC is 0%. Fig. 16 is a graph showing the film thickness distribution of the substrate W in the case where the total flow rate of the reaction gas is 1730 sccm and the RDC system is 100%. The flow rate ratio of the reaction gas used in the experiments of Figs. 15 and 16 was NH3/H2/Ar = 260/1390 / 80 sccm.

Fig. 17 shows a film thickness distribution of the substrate W in the case where the total flow rate of the reaction gas is 4830 sccm and the RDC is 0%. Fig. 18 shows a film thickness distribution of the substrate W in the case where the total flow rate of the reaction gas is 4830 sccm and the RDC system is 100%. The flow rate ratio of the reaction gas used in the experiments of Figs. 17 and 18 was NH3/H2/Ar = 750/4000/80 sccm.

Referring to Fig. 13, Fig. 15, and Fig. 17, in the case where the RDC is 0%, that is, in the case where the reaction gas has been ejected only from the outer ejection port 51b, the embodiment 2 and the embodiment 3 are compared with the embodiment. 1, G / R (Growth Rate; growth rate) is lower. Since the number of the outer injection ports 51b is smaller than that of the second embodiment and the third embodiment, the flow rate of the reaction gas of the first embodiment is also faster in the case where the reaction gas of the same flow rate has been injected. Therefore, in the first embodiment, a large amount of the reaction gas injected from the outer injection port 51b flows in the direction away from the exhaust portion 22h provided on the periphery of the mounting table 14, and even in comparison with the second embodiment And in Example 3, the amount of the reaction gas flowing on the substrate W became larger. However, when the flow rate of the reaction gas flowing on the substrate W is too fast, the elements of the reaction gas are not sufficiently dissociated on the substrate W, and the quality of the film formed on the substrate W becomes poor. The quality of the film formed by the substrate W can be evaluated, for example, using WERP (Wet Etching Rate Ratio).

On the other hand, since the number of the outer injection ports 51b is larger than that of the first embodiment and the third embodiment, the reaction gas having the same flow rate as that of the first embodiment has been injected, compared to the first embodiment. The flow rate of the reaction gas is slower. Therefore, in the second and third embodiments, the quality of the film formed on the substrate W can be expected to be improved. However, in the second and third embodiments, since the flow rate of the reaction gas is slow and the exhaust region 220h is provided in the vicinity of the outer injection port 51b, a large amount of the reaction gas that has been injected from the outer injection port 51b flows into the exhaust region 220h. Therefore, it is considered that in Example 2 and Example 3, the amount of the reaction gas flowing on the substrate W is decreased, and G/R is lower than that in the first embodiment.

In the second embodiment, as shown in FIG. 9 and FIG. 10, the exhaust region 220h is provided below the outer injection port 51b on the periphery of the mounting table 14, but the third embodiment is as shown in FIGS. 11 and 12, and is placed on the mounting table. In the peripheral edge of the 14th, the angular region in which the outer injection port 51b is disposed is not provided with the exhaust region 220h, and the angular region in which the outer injection port 51b is not disposed is provided with the exhaust region 220h. Therefore, it is considered that, in the third embodiment, the time during which the reaction gas injected from the outer ejection opening 51b floats in the space between the bottom surface of the antenna 22a and the top surface of the substrate W is longer than that of the second embodiment, and is compared with the second embodiment. In Example 2, G/R is further increased. As described above, it is possible to change the G/R by changing the positional relationship between the outer injection port 51b and the exhaust region 220h. Furthermore, in the third embodiment, it is considered that the flow rate of the reaction gas injected from each of the outer injection ports 51b can be increased by increasing the number of the outer injection ports 51b, and the amount of the reaction gas flowing on the substrate W can be increased. G/R increases.

Further, when comparing Fig. 13, Fig. 15, Fig. 17, Fig. 14, Fig. 16, and Fig. 18, the RDC is 0%, the thickness of the substrate W close to the outer ejection opening 51b is large, and the RDC is 100% closer to the inner side. The thickness of the substrate W of the ejection port 50b is large. Further, referring to Figs. 13 to 18, in Example 2 and Example 3, the gradient of the film thickness distribution was larger than that in Example 1. As described above, in the second and third embodiments, the controllability of the film thickness distribution of the substrate W is improved.

Next, an experimental result in the case where the number of the outer injection ports 51b is further reduced as compared with the third embodiment will be described. Fig. 19 is a schematic view showing an example of the substrate processing apparatus 10-4 of the fourth embodiment in the case of viewing from above. Since the B-B cross section of the substrate processing apparatus 10-4 of the fourth embodiment is the same as that of FIG. 12, detailed description thereof will be omitted.

In the substrate processing apparatus 10-4 of the fourth embodiment, as shown in FIG. 19, for example, each of the antennas 22a has three inner injection ports 50b at a position closer to the axis X than the region of the antenna 22a. Each of the inner injection ports 50b, for example, an arrow shown in FIG. 12, ejects a reaction gas in a direction away from the axis X in the planar direction of the mounting table 14. Each of the inner injection ports 50b ejects, for example, a reaction gas into a direction parallel to the surface of the substrate W placed on the substrate placement region 14a of the mounting table 14.

Further, in the substrate processing apparatus 10-4 of the fourth embodiment, as shown in FIG. 19, each of the antennas 22a has 37 outer ejection openings 51b on the side farther from the axis X than the region of the antenna 22a. In the fourth embodiment, each of the antennas 22a is provided with an outer injection port 51b having an angular range of 24°. Each of the outer injection ports 51b, for example, an arrow shown in FIG. 12, ejects a reaction gas in a direction approaching the axis X along the plane direction of the mounting table 14. Each of the outer injection ports 51b ejects the reaction gas to a direction parallel to the surface of the substrate W placed on the substrate placement region 14a of the mounting table 14, for example.

Further, in the substrate processing apparatus 10-4 of the fourth embodiment, for example, as shown in FIG. 19, the exhaust region 220h of the exhaust portion 22h is provided along the periphery of the mounting table 14. The exhaust region 220h is provided on the periphery of the mounting platform 14 and is an angular region in which the antenna 22a is not provided. Further, in the substrate processing apparatus 10-4 of the fourth embodiment, the spacer 220 provided below the outer ejection opening 51b is provided on the peripheral edge of the mounting base 14 and has an angle of 24° of the outer ejection opening 51b. range.

20 to 25 show an example of the film thickness distribution on the substrate in the case where the flow rate of the reaction gas is changed in the first embodiment, the fourth embodiment, and the fifth embodiment. The configuration of the substrate processing apparatus 10 of the fifth embodiment is the substrate processing apparatus 10 described with reference to FIGS. 1 to 6 . 20 shows the film thickness distribution of the substrate W in the case where the total flow rate of the reaction gas is 630 sccm and the RDC is 0%. The flow rate of the reaction gas used in the experiment of Fig. 20 was NH3/H2/Ar = 86/464/80 sccm. Figure 21 is an enlarged view of a broken line portion of Figure 20.

Fig. 22 shows the film thickness distribution of the substrate W in the case where the total flow rate of the reaction gas is 1650 sccm and the RDC is 0%. The flow rate of the reaction gas used in the experiment of Fig. 22 was NH3/H2 = 260/1390 sccm. Figure 23 is an enlarged view of a broken line portion of Figure 22.

Fig. 24 shows the film thickness distribution of the substrate W in the case where the total flow rate of the reaction gas is 4,750 sccm and the RDC is 0%. The flow rate of the reaction gas used in the experiment of Fig. 24 was NH3/H2 = 750 / 4000 sccm. Figure 25 is an enlarged view of a broken line portion of Figure 24.

In the case of the antennas 22a, the number of the outer injection ports 51b is reduced to 37 in the fourth embodiment and the fifth embodiment, and the G/R is increased to the same level as in the first embodiment. In the fourth and fifth embodiments, the flow rate of the reaction gas ejected from each of the outer injection ports 51b is increased, and the amount of the reaction gas flowing through the substrate W is increased. In the fourth and fifth embodiments, there are 37 outer injection ports 51b, and in the first embodiment, the outer injection ports 51b are three. Therefore, in the fourth and fifth embodiments, the flow velocity of the reaction gas injected from each of the outer injection ports 51b is slower than the flow velocity of the reaction gas injected from the respective outer injection ports 51b in the first embodiment. Therefore, in the fourth and fifth embodiments, the time during which the reaction gas floats in the space between the bottom surface of the antenna 22a and the top surface of the substrate W becomes longer as compared with the first embodiment, and the probability of elemental dissociation of the reaction gas increases. Therefore, in the fourth embodiment and the fifth embodiment, the quality of the film formed on the substrate W can be improved.

Further, referring to Fig. 21, Fig. 23, and Fig. 25, in the first embodiment, as the flow rate of the reaction gas increases, the G/R in the vicinity of the edge of the substrate W on the side of the outer ejection opening 51b is larger than that on the substrate W. The G/R of other areas is relatively lower. In the present invention, the flow rate of the reaction gas ejected from each of the outer injection ports 51b increases as the flow rate of the reaction gas increases, and a large amount of the reaction gas flows toward the axis X side and the edge of the substrate W on the side of the outer injection port 51b. The concentration of the nearby reaction gas is relatively lowered.

On the other hand, in the case where the flow rate of the reaction gas in the fourth embodiment is increased, the growth of G/R is slowed in the vicinity of the edge of the substrate W on the side of the outer ejection opening 51b, but the relative decrease in G/R is not observed. Further, even if the flow rate of the reaction gas in the fifth embodiment is increased, the G/R is not decreased in the vicinity of the edge of the substrate W on the side of the outer injection port 51b, and the increase in the G/R is not observed. It is considered that this is because the number of the outer injection ports 51b is larger than that of the first embodiment and the fifth embodiment, and the amount of increase in the flow rate is lower with respect to the flow rate of the reaction gas. Further, in the fifth embodiment, a plurality of outer injection ports 51b are disposed in a wider angular range than in the fourth embodiment, and therefore, from the plurality of outer injection ports, the fourth embodiment is provided in comparison with the fourth embodiment in which the plurality of outer injection ports 51b are closely arranged. The decrease in the flow rate of the reaction gas injected by 51b is faster. Therefore, it is considered that Example 5 suppresses the flow rate of the reaction gas reaching the substrate W and maintains the probability of elemental dissociation of the reaction gas to a higher degree than that of the embodiment 4.

An embodiment of the present invention has been described above. According to the substrate processing apparatus 10 of the present embodiment, the controllability of the film thickness distribution on the substrate W from the rotation center of the mounting table 14 to the radial direction of the mounting table 14 can be improved.

In the above-described embodiment, the substrate processing apparatus 10 is described as an example of a film forming apparatus that forms a predetermined film on the substrate W by the PE-ALD method. However, the technology disclosed in the present invention is not limited thereto. For example, the technique disclosed in the above embodiments can be applied to a plasma etching apparatus (for example, ALE (Atomic Layer Etching)) as long as the processing of the plasma using the reactive gas is performed on the substrate W. A device or the like which is to be subjected to a plasma modification treatment.

Based on the above, it should be understood that the various embodiments of the present invention are described for the purpose of illustration, and various modifications may be made without departing from the scope and spirit of the invention. Accordingly, the various embodiments disclosed herein are not intended to limit the scope and spirit of the inventions.

10‧‧‧Substrate processing unit
10-1～10-3‧‧‧Substrate processing device
12‧‧‧Processing container
12a‧‧‧lower components
12b‧‧‧ upper member
12q‧‧‧ exhaust duct
12r‧‧‧ gas supply road
14‧‧‧ mounting table
14a‧‧‧Substrate placement area
16‧‧‧First Gas Supply Department
16a‧‧‧Injection Department
16h‧‧‧jet
18‧‧‧Exhaust Department
18a‧‧‧Exhaust port
18d‧‧‧ space
18g‧‧‧ gap
18q‧‧‧ exhaust duct
20‧‧‧Second Gas Supply Department
20a‧‧‧jet
20c‧‧‧Flow Controller
20d‧‧‧ space
20g‧‧‧ gas supply source
20p‧‧‧ gap
20r‧‧‧ gas supply road
20v‧‧‧ valve
22‧‧‧ Plasma Production Department
22a‧‧‧Antenna
22b‧‧‧ coaxial waveguide
22c‧‧‧Reactive Gas Supply Department
22h‧‧‧Exhaust Department
24‧‧‧ drive mechanism
24a‧‧‧ drive
24b‧‧‧Rotary axis
26‧‧‧heater
34‧‧‧Exhaust device
40‧‧‧天板
42‧‧‧Slot plate
44‧‧‧ Slow wave board
46‧‧‧Cooling plate
50b‧‧‧Inside injection port
50c‧‧‧Flow Control Department
50g‧‧‧ gas supply source
50v‧‧‧ valve
51b‧‧‧Outer jet
51c‧‧‧Flow Control Department
51v‧‧‧ valve
52‧‧‧Exhaust device
60‧‧‧waveguide
62a‧‧‧Inside conductor
62b‧‧‧Outer conductor
68‧‧‧Microwave Loss
70‧‧‧Control Department
121p～123p‧‧‧ gas supply road
161‧‧‧Internal Gas Supply Department
161a‧‧‧Inside Jetting Department
161b‧‧‧Flexible components
161c‧‧‧Flow Controller
161d‧‧‧ buffer space
161p‧‧‧ gas supply road
161v‧‧‧ valve
162‧‧‧Intermediate Gas Supply Department
162a‧‧‧Inside Jetting Department
162b‧‧‧Flexible components
162c‧‧‧Flow Controller
162d‧‧‧ buffer space
162p‧‧‧ gas supply road
162v‧‧‧ valve
163‧‧‧Outside Gas Supply Department
163a‧‧‧Inside Jetting Department
163b‧‧‧Flexible components
163c‧‧‧Flow Controller
163d‧‧‧ buffer space
163p‧‧‧ gas supply road
163v‧‧‧ valve
220‧‧‧ spacers
220h‧‧‧Exhaust area
221‧‧‧ 盖部
222‧‧‧Ditch
223‧‧‧ venting holes
A1‧‧‧inside annular zone
A2‧‧‧ intermediate ring zone
A3‧‧‧Outer annular area
AP‧‧‧ openings
C‧‧‧Processing room
G‧‧‧ gate valve
L‧‧‧ length
M1～M4‧‧‧first member to fourth member
R1～r4‧‧‧distance
R1‧‧‧ first area
R2‧‧‧ second area
Unit U‧‧‧
W‧‧‧ wafer
W1‧‧‧ diameter
X‧‧‧ axis
Y‧‧‧ axis

1 is a cross-sectional view showing an example of a substrate processing apparatus.

Fig. 2 is a schematic view showing an example of a substrate processing apparatus in a case where it is viewed from above.

Fig. 3 is an enlarged cross-sectional view showing an example of the left side portion of the axis X in Fig. 1.

Fig. 4 is an enlarged cross-sectional view showing an example of a left side portion of the axis X in Fig. 1.

Figure 5 shows an example of the bottom surface of unit U.

Fig. 6 is an enlarged cross-sectional view showing an example of a right portion of the axis X in Fig. 1.

Fig. 7 is a schematic view showing an example of the substrate processing apparatus of the first embodiment in the case of viewing from above.

Fig. 8 is a cross-sectional view showing an example of the substrate processing apparatus in the first embodiment.

Fig. 9 is a schematic view showing an example of the substrate processing apparatus of the second embodiment in the case of viewing from above.

Fig. 10 is a cross-sectional view showing an example of the substrate processing apparatus in the second embodiment.

Fig. 11 is a schematic view showing an example of the substrate processing apparatus of the third embodiment in the case of viewing from above.

Fig. 12 is a cross-sectional view showing an example of the substrate processing apparatus in the third embodiment.

Fig. 13 shows an example of the film thickness distribution on the substrate in the case where the flow rate of the reaction gas and the RDC (Radical Distribution Control) were changed in Examples 1 to 3.

Fig. 14 shows an example of the film thickness distribution on the substrate in the case where the flow rate of the reaction gas and the RDC were changed in Examples 1 to 3.

Fig. 15 shows an example of the film thickness distribution on the substrate in the case where the flow rate of the reaction gas and the RDC were changed in Examples 1 to 3.

Fig. 16 shows an example of the film thickness distribution on the substrate in the case where the flow rate of the reaction gas and the RDC were changed in Examples 1 to 3.

Fig. 17 shows an example of the film thickness distribution on the substrate in the case where the flow rate of the reaction gas and the RDC were changed in Examples 1 to 3.

Fig. 18 shows an example of the film thickness distribution on the substrate in the case where the flow rate of the reaction gas and the RDC were changed in Examples 1 to 3.

Fig. 19 is a schematic view showing an example of the substrate processing apparatus of the fourth embodiment in the case of viewing from above.

Fig. 20 shows an example of the film thickness distribution on the substrate in the case where the flow rate of the reaction gas and the RDC are changed in the embodiment 1, the embodiment 4, and the embodiment 5.

Figure 21 is an enlarged view of a broken line portion of Figure 20.

Fig. 22 shows an example of the film thickness distribution on the substrate in the case where the flow rate of the reaction gas and the RDC are changed in the first embodiment, the fourth embodiment, and the fifth embodiment.

Figure 23 is an enlarged view of a broken line portion of Figure 22.

Fig. 24 shows an example of the film thickness distribution on the substrate in the case where the flow rate of the reaction gas and the RDC were changed in Example 1, Example 4, and Example 5.

Figure 25 is an enlarged view of a broken line portion of Figure 24.

10‧‧‧Substrate processing unit

12‧‧‧Processing container

12a‧‧‧lower components

12b‧‧‧ upper member

12q‧‧‧ exhaust duct

12r‧‧‧ gas supply road

14‧‧‧ mounting table

14a‧‧‧Substrate placement area

16a‧‧‧Injection Department

16h‧‧‧jet

18‧‧‧Exhaust Department

18a‧‧‧Exhaust port

20‧‧‧Second Gas Supply Department

20a‧‧‧jet

22‧‧‧The Plasma Generation Department

22a‧‧‧Antenna

22b‧‧‧ coaxial waveguide

22c‧‧‧Reactive Gas Supply Department

22h‧‧‧Exhaust Department

24‧‧‧ drive mechanism

24a‧‧‧ drive

24b‧‧‧Rotary axis

26‧‧‧heater

34‧‧‧Exhaust device

60‧‧‧waveguide

68‧‧‧Microwave Loss

70‧‧‧Control Department

161‧‧‧Internal Gas Supply Department

162‧‧‧Intermediate Gas Supply Department

163‧‧‧Outside Gas Supply Department

AP‧‧‧ openings

R2‧‧‧ second area

X‧‧‧ axis

Claims (8)

A substrate processing apparatus comprising: a mounting table on which a substrate to be processed is placed, and is arranged to be rotatable about an axis to move the substrate to be processed around the axis; and the antenna is disposed in a plasma processing region The plasma processing region is one of a plurality of regions sequentially passing through the substrate to be processed in the circumferential direction of the axis due to the rotation of the mounting table; and the gas supply portion supplies the reaction gas to the region a plasma processing region; and the gas supply portion has: an inner injection port, which is disposed closer to the axis than the antenna when viewed from the axial direction, and ejects the reaction gas away from the axis; The outer injection port is disposed at a position farther from the axis than the antenna when viewed from the axial direction, and ejects a reaction gas toward the axis, and the flow rate of the reaction gas is ejected from the inner injection port. The flow rate of the reaction gas is independently controlled. The substrate processing apparatus according to claim 1, wherein the inner injection port and the outer injection port eject the reaction gas toward a region where the antenna is provided, as viewed in the axial direction. The substrate processing apparatus according to claim 1, wherein the inner injection port and the outer injection port spray the reaction gas in a direction parallel to a surface of the substrate to be processed placed on the mounting table. The substrate processing apparatus according to claim 1, wherein the gas supply unit has a plurality of the inner injection ports and the outer injection ports. The substrate processing apparatus according to claim 1, wherein a plurality of the antennas are provided in the plasma processing region, and the inner injection port and the outer injection port are respectively assigned one or more to each of the antennas, and The flow rate of the reaction gas injected by each of the antennas can be independently controlled. The substrate processing apparatus of claim 1, further comprising: an exhaust region disposed along a circumference of the mounting table and exhausted by the plurality of exhaust holes; and viewed from the axial direction The plurality of exhaust holes are provided at an angle different from a region where the angle of the antenna is provided. A substrate processing apparatus according to claim 6, wherein a plurality of the exhaust regions are provided along a circumference of the mounting table. The substrate processing apparatus of claim 7, wherein the amount of exhaust gas from each of the exhaust regions is the same.