TW201626407A - Providing electrically-conductive articles with electrically-conductive metallic connectors - Google Patents
Providing electrically-conductive articles with electrically-conductive metallic connectors Download PDFInfo
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- TW201626407A TW201626407A TW104137072A TW104137072A TW201626407A TW 201626407 A TW201626407 A TW 201626407A TW 104137072 A TW104137072 A TW 104137072A TW 104137072 A TW104137072 A TW 104137072A TW 201626407 A TW201626407 A TW 201626407A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
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- Non-Insulated Conductors (AREA)
Abstract
Description
本發明係關於一種用於製備具有導電金屬電極網格及連接至其等之導電金屬連接件之透明導電物件之方法。此等發明導電物件具有在一透明基板上之一觸摸區域中之特別配置之導電金屬(細導線)網格以及一非觸摸區域中之導電金屬連接件。 The present invention relates to a method for preparing a transparent conductive article having a conductive metal electrode grid and a conductive metal connector attached thereto. The inventive conductive articles have a specially arranged conductive metal (thin wire) grid in one of the touch regions on a transparent substrate and a conductive metal connector in a non-touch region.
各種電子裝置(尤其是用於各種通信、金融及存檔用途之顯示裝置)正快速進步。對於諸如觸控式螢幕面板、電致變色裝置、發光二極體(LED)、場效應電晶體、固態照明、有機發光二極體(OLED)顯示器及液晶顯示器之用途而言,導電膜係必要的,且業界已作出了相當大之努力來改良此等導電膜之性質,且尤其是改良金屬網格或線導電率並提供遮罩設計與所得使用者金屬圖案之間的儘可能多之對應性。 Various electronic devices, especially display devices for various communication, financial, and archival purposes, are rapidly advancing. For applications such as touch screen panels, electrochromic devices, light emitting diodes (LEDs), field effect transistors, solid state lighting, organic light emitting diode (OLED) displays, and liquid crystal displays, conductive film is necessary And the industry has made considerable efforts to improve the properties of these conductive films, and in particular to improve the metal grid or wire conductivity and provide as much correspondence as possible between the mask design and the resulting user metal pattern. Sex.
用於各種電子裝置(其包含包括但不限於電話、計算裝置及其他顯示裝置之電子、光學、感測及診斷裝置)中導電物件已經設計成對一人之指尖或機械觸控筆之觸摸作出回應。 Conductive objects used in various electronic devices including electronic, optical, sensing, and diagnostic devices including, but not limited to, telephones, computing devices, and other display devices have been designed to make a touch on a person's fingertip or mechanical stylus Respond.
尤其需要提供含有經改良之導電膜元件之觸控式螢幕顯示器及裝置。當前,電容式觸控式螢幕顯示器使用氧化銦錫(ITO)塗層以產生用於區分多個接觸點之電容區域陣列。ITO塗層具有明顯之缺點且正在努力在各種電子裝置中替換掉ITO塗層之使用。 In particular, there is a need to provide touch screen displays and devices that include improved conductive film elements. Currently, capacitive touch screen displays use an indium tin oxide (ITO) coating to create an array of capacitive regions for distinguishing multiple contact points. ITO coatings have significant drawbacks and efforts are being made to replace the use of ITO coatings in various electronic devices.
在已知之印刷電路板(PCB)及積體電路製程中,批量製造之較佳方式係將一電路自一母版物件直接印刷至一適當基板上、在一適當PCB光敏膜上產生電路影像之一副本或直接將一母版電路影像(或負片圖案)雷射寫入至PCB光敏膜上。經成像PCB光敏膜然後用作用於將多個副本成像至一或多個塗有光阻劑之一基板上之「遮罩」。 In the known printed circuit board (PCB) and integrated circuit processes, the preferred method of mass production is to directly print a circuit from a master object onto a suitable substrate to produce a circuit image on a suitable PCB photosensitive film. A copy or a laser of a master circuit image (or negative pattern) is directly written onto the photosensitive film of the PCB. The imaged PCB photosensitive film is then used as a "mask" for imaging multiple copies onto one or more substrates coated with a photoresist.
此等方法之一本質特徵係,PCB光敏膜及光阻劑組合物在配方及顯影方面最佳化,使得經成像副本在電路尺寸及性質方面儘可能如實地表示母版影像。此性質有時被稱作「保真度」(或「對應性」),且保真度越差,所得副本之效能便越差。然而,在具有極細尺寸特徵之經設計圖案之此等電路之批量生產中,存在多種自然地不利於保真度或不利於使母版電路影像如實地重現之組成及操作(例如,化學處理)狀況。 One of the essential characteristics of these methods is that the PCB photosensitive film and photoresist composition are optimized in formulation and development such that the imaged copy represents the master image as faithfully as possible in terms of circuit size and nature. This property is sometimes referred to as "fidelity" (or "correspondence"), and the worse the fidelity, the worse the performance of the resulting copy. However, in the mass production of such circuits having a design pattern with extremely fine size features, there are a variety of compositions and operations that are inherently unfavorable for fidelity or that are not conducive to faithfully reproducing the master circuit image (eg, chemical processing). situation.
導電銀物件已被描述為用在觸控式螢幕面板中,該觸控式螢幕面板在透明基板之兩側上皆具有導電銀網格圖案,例如如美國專利申請公開案2011/0289771(Kuriki)及2011/0308846(Ichiki)中。 Conductive silver articles have been described for use in touch screen panels having conductive silver grid patterns on both sides of a transparent substrate, for example, as disclosed in US Patent Application Publication No. 2011/0289771 (Kuriki) And 2011/0308846 (Ichiki).
然而,僅僅在透明基板之一或兩側上存在導電銀網格圖案不足以提供對於各種電子裝置之感測觸摸所需要之一回應。導電金屬網格必須以某種方式彼此連接且連接至裝置中之適當電子組件及軟體,以便可回應於一手指或觸控筆之一觸摸實現所需功能。因此,導電物件亦經設計具有導電「匯流排」線路(或導電連接件或終端佈線區域),其係在針對觸摸設計之導電觸摸區域外部。美國專利申請案2011/0289771(上文提及)之圖8中示出了此一導電物件之一種表示。 However, the presence of a conductive silver grid pattern only on one or both sides of the transparent substrate is not sufficient to provide one of the responses needed for sensing touches of various electronic devices. The conductive metal grid must be connected to each other in some manner and to the appropriate electronic components and software in the device so that the desired function can be achieved in response to a touch of one finger or stylus. Thus, the conductive article is also designed to have a conductive "bus bar" line (or conductive connection or termination wiring area) that is external to the conductive touch area for the touch design. A representation of such a conductive article is shown in Figure 8 of U.S. Patent Application Serial No. 2011/0289771 (mentioned above).
通常,導電物件中之導電金屬連接件並非針對高透明度或對觸摸之敏感性而設計。與觸摸區域中之導電金屬網格相比,其將有可能具有不同導電率及尺寸。此等區別進一步使得更難以實現一母版電路影像與由此得到之副本之所需保真度。 Typically, conductive metal connectors in conductive articles are not designed for high transparency or sensitivity to touch. It will likely have different electrical conductivities and sizes than conductive metal grids in the touch area. These differences further make it more difficult to achieve the required fidelity of a master circuit image and the resulting copy.
用於製作適用於針對觸摸設計之表觀透明觸摸區域之細導線之已知低成本方法並非始終可適合於製作適用於在導電金屬連接件或終端佈線區域中使用之匯流排線路之又大又粗之導線,該導電金屬連接件或終端佈線區域係在含有導電金屬網格之導電觸摸區域外部。對於此等區域之各者使用不同製作方法係昂貴的且容易出現各種問題。 Known, low-cost methods for fabricating thin wires suitable for use in an apparently transparent touch area of a touch design are not always suitable for making large and large bus lines suitable for use in conductive metal connectors or terminal wiring areas. A thick wire that is external to the conductive touch area containing the conductive metal grid. The use of different manufacturing methods for each of these areas is expensive and prone to various problems.
因此,需要用於提供具有觸敏區域中之導電金屬網格以及導電金屬連接件兩者之透明導電物件之一方式,該導電金屬網格以及導電金屬連接件兩者儘可能接近於母版電路影像之重現。 Accordingly, there is a need for one way to provide a transparent conductive article having both a conductive metal mesh in a touch sensitive area and a conductive metal connector that is as close as possible to the master circuit as close as possible to the master circuit The reproduction of the image.
本發明提供一種用於提供一導電物件之方法,該方法包括:提供具有一第一支撐側及一相對第二支撐側之一透明基板;在該透明基板之該第一支撐側上提供:(a)導電金屬網格,(b)導電金屬連接件,其電連接至該導電金屬網格,及視情況,(c)透明區域,其在該導電金屬網格及該導電金屬連接件兩者外部,其中:(i)該導電金屬連接件包括至少一根金屬主導線,該至少一根金屬主導線包括電連接至該至少一根金屬主導線之一端處之一金屬端導線之兩根或更多根金屬微導線,該至少一根金屬主導線中之該兩根或更多根金屬微導線及該金屬端導線形成一捆裝型樣;(ii)各金屬微導線之平均長度係至少1mm;且(iii)該導電金屬連接件具有小於68%之一綜合透射比。 The present invention provides a method for providing a conductive article, the method comprising: providing a transparent substrate having a first support side and a second support side; providing on the first support side of the transparent substrate: a) a conductive metal mesh, (b) a conductive metal connector electrically connected to the conductive metal mesh, and optionally, (c) a transparent region in which both the conductive metal mesh and the conductive metal connector Externally, wherein: (i) the electrically conductive metal connector comprises at least one metal main conductor, the at least one metal main conductor comprising two of the metal end conductors electrically connected to one end of the at least one metal main conductor or a plurality of metal micro-wires, the two or more metal micro-wires of the at least one metal main conductor and the metal-side wires forming a bundle pattern; (ii) the average length of each metal micro-wire is at least 1 mm; and (iii) the conductive metal connector has a combined transmittance of less than 68%.
在許多實施例中,本發明之方法進一步包括:在該透明基板之該相對第二支撐側上提供: (a)一相對導電金屬網格,(b)一相對導電金屬連接件,其電連接至該相對導電金屬網格,及視情況,且視情況,(c)透明區域,其在該相對導電金屬網格及該相對導電金屬連接件兩者外部,其中:(i)該相對導電金屬連接件包括至少一根金屬主導線,該至少一根金屬主導線包括電連接至該至少一根金屬主導線之一端處之一金屬端導線之兩根或更多根金屬微導線,該至少一根金屬主導線中之該兩根或更多根金屬微導線及該金屬端導線形成一捆裝型樣;(ii)各金屬微導線之平均長度係至少1mm;且(iii)該相對導電金屬連接件具有小於68%之一綜合透射比。 In many embodiments, the method of the present invention further comprises: providing on the opposite second support side of the transparent substrate: (a) a relatively conductive metal mesh, (b) a relatively conductive metal connector electrically connected to the relatively conductive metal mesh, and optionally, (c) a transparent region at which the opposite conductive Both the metal mesh and the relatively conductive metal connector are external, wherein: (i) the relatively conductive metal connector comprises at least one metal bus, the at least one metal bus including electrical connection to the at least one metal One or more metal microwires of one of the metal end conductors at one end of the line, the two or more metal microwires of the at least one metal main conductor and the metal end conductor forming a bundle pattern (ii) each metal microwire has an average length of at least 1 mm; and (iii) the relatively conductive metal connector has a combined transmittance of less than 68%.
由本發明方法之任何實施例提供之一或多個導電物件可用於製造各種觸控式螢幕裝置。 One or more conductive articles provided by any of the embodiments of the present methods can be used to fabricate a variety of touch screen devices.
本發明提供包括具有一較高透明度及一較高導電率之導電金屬網格(用於「觸敏」或「觸摸」區域)之導電物件。此等導電物件亦包括導電金屬連接件(亦識別為匯流排線路、匯流排區域或終端電極),此等區域之影像與原始遮罩元件中之影像之匹配(對應性或保真度)得到改良且具有較高導電率。該兩個區域中之導電金屬線可以使用共同材料在一共同工序(或步驟)中製作。 The present invention provides a conductive article comprising a conductive metal grid (for "touch sensitive" or "touch" areas) having a higher transparency and a higher conductivity. The conductive objects also include conductive metal connectors (also identified as busbar lines, busbar regions, or terminal electrodes), and the matching of the images in the regions with the images in the original mask components (correspondence or fidelity) is obtained. Improved and has a high electrical conductivity. The conductive metal lines in the two regions can be fabricated in a common process (or step) using a common material.
針對(電極)連接件區域中之導電金屬導線圖案,藉由將至少一根(諸如銀)主導線(例如,兩根或更多根金屬主導線)配置成兩根或更多根金屬微導線之捆裝型樣及各捆裝型樣之各種金屬(諸如銀)端導線來實現該等優點。此外,捆裝型樣中之相鄰金屬微導線可與電連接金屬(諸如銀)跨接導線及金屬(諸如銀)端導線兩者一起配置。捆裝型樣及金屬微導線係獲自曝光及處理而具有用於實現觸控式螢幕裝置中之最 優效能之特定尺寸、間隔及導電性質。即使在存在一些製造缺陷之情況下,金屬主導線及金屬微導線之捆裝型樣仍然可增加導電率、可製造性及堅固性。換言之,使用本發明,至少降低了製造缺陷或不一致之可能影響。 Aligning at least one (such as silver) main conductor (for example, two or more metal main conductors) into two or more metal micro-wires for the conductive metal wire pattern in the (electrode) connector region The bundled pattern and various metal (such as silver) end wires of each bundled pattern achieve these advantages. Additionally, adjacent metal microwires in the bale pattern can be configured with both electrical connection metal (such as silver) jumper wires and metal (such as silver) end wires. The bundled pattern and the metal micro-wire are obtained from exposure and processing and have the most used in the touch screen device. Specific size, spacing and conductivity properties of superior performance. Even in the presence of some manufacturing defects, the metal master wire and the metal microwire bundled pattern can increase conductivity, manufacturability and robustness. In other words, the use of the present invention at least reduces the possible effects of manufacturing defects or inconsistencies.
5‧‧‧導電物件 5‧‧‧Electrical objects
6‧‧‧導電金屬網格 6‧‧‧ Conductive metal grid
8‧‧‧導電金屬連接件 8‧‧‧ Conductive metal connectors
10‧‧‧金屬主導線 10‧‧‧ metal main line
15‧‧‧光敏鹵化銀乳劑層之部分 15‧‧‧Parts of the photosensitive silver halide emulsion layer
20‧‧‧金屬微導線 20‧‧‧Metal microwires
22‧‧‧金屬端導線 22‧‧‧Metal end wire
24‧‧‧金屬跨接導線 24‧‧‧Metal jumper wires
40‧‧‧透明基板 40‧‧‧Transparent substrate
42‧‧‧(透明基板之)第一支撐側 42‧‧‧ (transparent substrate) first support side
44‧‧‧(透明基板之)相對第二支撐側 44‧‧‧ (transparent substrate) relative to the second support side
50‧‧‧(若干)透明區域 50‧‧‧(several) transparent areas
60‧‧‧未曝光且未顯影之鹵化銀顆粒 60‧‧‧Unexposed and undeveloped silver halide grains
62‧‧‧銀粒子 62‧‧‧ Silver particles
64‧‧‧親水黏合劑 64‧‧‧Hydrophilic adhesive
100‧‧‧所提供之導電膜元件前驅體 Conductive film element precursor provided by 100‧‧‧
105‧‧‧經逐影像曝光之導電膜元件前驅體 105‧‧‧Previous image of conductive film element exposed by image
107‧‧‧導電膜元件前驅體之第一側之逐影像曝光 107‧‧‧Image-wise exposure of the first side of the precursor of the conductive film element
109‧‧‧導電膜元件前驅體之第二側之逐影像曝光 109‧‧‧Image-wise exposure of the second side of the precursor of the conductive film element
110‧‧‧經顯影之經曝光導電膜元件 110‧‧‧Developed exposed conductive film components
112‧‧‧經逐影像曝光之前驅體之第一側之顯影 112‧‧‧Exposure of the first side of the precursor before exposure to the image
114‧‧‧經逐影像曝光之前驅體之第二側之顯影 114‧‧‧Exposure of the second side of the precursor by imagewise exposure
D1‧‧‧金屬微導線最大高度 D1‧‧‧Maximum height of metal microwires
D2‧‧‧金屬微導線最小高度 D2‧‧‧Metal microwire minimum height
L‧‧‧金屬微導線長度 L‧‧‧Metal microwire length
S1‧‧‧相鄰金屬主導線之間的距離 S1‧‧‧Distance between adjacent metal conductor lines
S2‧‧‧相鄰金屬微導線之間的距離 S2‧‧‧Distance between adjacent metal microwires
W‧‧‧金屬微導線寬度 W‧‧‧Metal microwire width
圖1係示出在一透明基板之一個支撐側上之一導電金屬連接件導線圖案之一示意圖解說明,該導電金屬連接件導線圖案可被併入至使用本發明製備之一導電物件或其部分中。 1 is a schematic illustration of one of a conductive metal connector wire pattern on a support side of a transparent substrate, the conductive metal connector wire pattern being incorporated into a conductive article or a conductive article thereof prepared using the present invention or Part of it.
圖2係根據本發明製備之一導電物件之一示意橫截面圖。 Figure 2 is a schematic cross-sectional view of one of the electrically conductive articles prepared in accordance with the present invention.
圖3A係根據一較佳實施例製備之包括安置在一透明基板上之一光敏鹵化銀乳劑層之一部分之一導電膜元件前驅體之一示意橫截面圖,該光敏鹵化銀乳劑層之部分包括未顯影之光敏鹵化銀顆粒。 3A is a schematic cross-sectional view of a conductive film element precursor comprising a portion of a photosensitive silver halide emulsion layer disposed on a transparent substrate, the portion of the photosensitive silver halide emulsion layer being included, in accordance with a preferred embodiment. Undeveloped photosensitive silver halide grains.
圖3B係包括安置在一透明基板上之一代表性銀微導線中之顯影光敏鹵化銀顆粒之一導電膜元件前驅體之一示意橫截面圖,該銀微導線可獲自圖3A中示出之光敏鹵化銀乳劑層之部分。 3B is a schematic cross-sectional view of one of the conductive film element precursors including one of the developed photosensitive silver halide grains disposed in a representative silver microwire on a transparent substrate, the silver microwire being obtainable from FIG. 3A. A portion of the photosensitive silver halide emulsion layer.
圖4及圖5係示出在一透明基板之一個支撐側上之導電金屬(諸如銀)連接件導線圖案之示意圖解說明,其示出了呈多種捆裝型樣之金屬(諸如銀)端導線與不同之金屬(諸如銀)跨接導線配置。 4 and 5 are schematic illustrations of conductive metal (such as silver) connector wire patterns on a support side of a transparent substrate, showing metal (such as silver) ends in a variety of bundled patterns. The wires are configured with jumper wires with different metals, such as silver.
圖6至圖9係示出了用於由單側或雙重導電膜元件前驅體形成導電物件之選項之流程圖。 6 through 9 are flow diagrams showing the options for forming a conductive article from a single-sided or dual conductive film element precursor.
圖10係一透明基板上之一金屬(諸如銀)微導線之一示意橫截面圖,該金屬微導線在基本上其中心處具有一最大高度。 Figure 10 is a schematic cross-sectional view of one of a metal (e.g., silver) microwire on a transparent substrate having a maximum height at substantially the center thereof.
圖11係一透明基板上之金屬(諸如銀)微導線之一示意橫截面圖,該金屬微導線之一最大高度更接近其外沿而非其中心。 Figure 11 is a schematic cross-sectional view of one of the metal (e.g., silver) microwires on a transparent substrate having a maximum height closer to its outer edge than its center.
圖12係根據本發明之至少一實施例之一導電物件之一示意圖解說明。 Figure 12 is a schematic illustration of one of the electrically conductive articles in accordance with at least one embodiment of the present invention.
以下討論係針對本發明之各種實施例,且雖然一些實施例對於具體使用可能更適用,但所揭示實施例不應被解釋或考慮為限制如下文主張之本發明之範疇。因此,熟習此項技術者應瞭解,以下揭示內容及闡釋性圖式比明確描述之應用具有更廣泛應用,且實施例之討論或圖解說明不旨在限制本發明之範疇。 The following discussion is directed to the various embodiments of the present invention, and although some embodiments may be more suitable for the particular use, the disclosed embodiments should not be construed or construed as limiting the scope of the invention as claimed. Thus, those skilled in the art should understand that the following disclosure and the illustrative drawings are more broadly applicable to the application, and the discussion or illustration of the embodiments is not intended to limit the scope of the invention.
定義definition
當在本文中用於定義導電物件之各種組件及結構時,除非另有指示,否則單數形式「一(a及an)」、及「該」旨在包含組件之一或多者(即,包含複數個所指物件)。 The singular forms "a" and "the" are intended to include one or more of the components (ie, include, unless otherwise indicated). Multiple refers to the object).
除非另有指示,否則術語「重量%」係指基於組合物、配方、溶液之總固體之組分或材料之量,或一層之乾重之%。除非另有指示,否則該百分比對於一乾燥層或圖案或對於用於製作該層或圖案之配方或組合物之總固體係相同的。 Unless otherwise indicated, the term "% by weight" means the amount of the component or material based on the total solids of the composition, formulation, solution, or the dry weight of the layer. Unless otherwise indicated, the percentage is the same for a dry layer or pattern or for the total solids of the formulation or composition used to make the layer or pattern.
除非另有指示,否則術語「導電膜元件」及「導電物件」旨在意指相同事物。其係指含有安置在一適當透明基板之任一或兩個支撐側上之導電金屬網格及導電金屬連接件之材料。下文描述導電物件之其他組件。 Unless otherwise indicated, the terms "conductive film element" and "conductive article" are intended to mean the same thing. It refers to a material comprising a conductive metal mesh and a conductive metal connector disposed on either or both of the support sides of a suitable transparent substrate. Other components of the conductive article are described below.
術語「第一」係指透明基板之一(第一平坦)支撐側上之層,且術語「第二」係指透明基板之相對(相對平坦)第二支撐側上之層。透明基板之各支撐側可同樣有用,且術語「第一」不一定意指一側係導電物件之主要或更好之支撐側。 The term "first" refers to a layer on the support side of one of the transparent substrates (first flat), and the term "second" refers to the layer on the opposite (relatively flat) second support side of the transparent substrate. The support sides of the transparent substrate can be equally useful, and the term "first" does not necessarily mean that one side is the primary or better support side of the conductive article.
術語「雙重」及「雙側」在本文中係用來指導電物件具有在透明基板之兩個支撐側上之所描述之導電金屬網格及導電金屬連接件。 The terms "dual" and "double side" are used herein to refer to an electrical object having the described conductive metal mesh and conductive metal connectors on the two support sides of the transparent substrate.
ESD係指「等效球形直徑」且係攝影領域中用來定義粒子(諸如鹵化銀顆粒)之大小之一術語。按顆粒ESD表達之鹵化銀顆粒之粒子 大小可使用圓盤離心機儀器而容易地判定。 ESD refers to the "equivalent spherical diameter" and is a term used in the field of photography to define the size of particles, such as silver halide grains. Particles of silver halide grains expressed by particle ESD The size can be easily determined using a disc centrifuge instrument.
除非另有指示,否則「黑白」係指銀形成黑白材料及配方,且並非發色之黑白材料及配方。 Unless otherwise instructed, "black and white" means black and white materials and formulations that form a black and white material and are not colored.
在大部分實施例中,包含一或兩個支撐側上之透明基板及所有隨附導電金屬網格及透明區域之導電物件被視為透明,意指其在電磁頻譜之所提及可見區域(例如自410nm至700nm)內之綜合透射比係70%或更大,或更有可能至少85%或甚至90%或更大,如例如使用一分光光度計及已知技術所量測。因此,所得導電物件中之觸摸區域將具有此高綜合透射比。然而,含有導電連接件之區域之透明度通常遠小於導電物件之剩餘部分,且在使用上文提及之相同設備及工序時通常具有小於68%或小於50%或甚至小於40%之一綜合透射比。 In most embodiments, a transparent substrate comprising one or both of the support sides and all of the conductive objects accompanying the conductive metal grid and the transparent regions are considered transparent, meaning that they are in the visible region of the electromagnetic spectrum ( For example, the integrated transmittance from 410 nm to 700 nm is 70% or greater, or more likely at least 85% or even 90% or greater, as measured, for example, using a spectrophotometer and known techniques. Therefore, the touch area in the resulting conductive article will have this high overall transmittance. However, the transparency of the region containing the conductive connectors is typically much less than the remainder of the conductive article and typically has a combined transmission of less than 68% or less than 50% or even less than 40% when using the same equipment and processes mentioned above. ratio.
替代地,綜合透射比可與沒有被觸摸區域中之導電金屬網格或連接件區域中之電連接金屬連接件覆蓋之透明基板區域之計算百分比相關聯。 Alternatively, the integrated transmittance can be associated with a calculated percentage of the transparent substrate area that is not covered by the electrically conductive metal grid or the electrical connection metal connections in the connector region.
在定義提供於導電物件中之金屬(諸如銀)主導線及金屬(諸如銀)微導線之各種尺寸時,使用熟習此項技術者已知之適當量測技術及設備自具體尺寸之至少2次量測判定各尺寸「平均值」。 In defining the various dimensions of the metal (such as silver) main conductor and the metal (such as silver) microwire provided in the electrically conductive article, appropriate measurement techniques and equipment known to those skilled in the art are used at least 2 times from the specific dimensions. The "average value" of each size is determined.
除非另有指示,否則術語「連接件」、「匯流排線路」及「匯流排區域」意指相同事物。 Unless otherwise indicated, the terms "connector", "busbar line" and "busbar area" mean the same thing.
除非本文中另有指示,否則術語「金屬」係指為單一種純金屬、金屬合金、金屬氧化物、金屬硫化物、一種金屬與有機或無機材料之複合物以及含有金屬粒子(諸如微米粒子、奈米粒子或顆粒)之材料之材料。 Unless otherwise indicated herein, the term "metal" means a single pure metal, metal alloy, metal oxide, metal sulfide, a composite of a metal with an organic or inorganic material, and containing metal particles (such as microparticles, Material of the material of nano particles or particles.
用途use
導電物件具有各種用途。例如,導電物件可用作裝置本身或其等可用作具有多種應用(包含但不限於電子、光學、感測及診斷用途) 之裝置中之組件。特定言之,希望使用導電膜元件前驅體來提供包括具有適當高度、寬度及導電率之金屬線之高度導電金屬網格及導電金屬連接件以在觸控式螢幕顯示器中使用或用作觸控式螢幕裝置之組件。此等電子及光學裝置及組件包含但不限於射頻標籤(RFID)、感測器、觸控式螢幕顯示器及記憶體以及顯示器之背板。 Conductive articles have a variety of uses. For example, a conductive article can be used as the device itself or the like for use in a variety of applications including, but not limited to, electronic, optical, sensing, and diagnostic applications. The components in the device. In particular, it is desirable to use a conductive film element precursor to provide a highly conductive metal grid and conductive metal connectors comprising metal lines of appropriate height, width and conductivity for use in touch screen displays or for use as touch A component of a screen device. Such electronic and optical devices and components include, but are not limited to, radio frequency tags (RFID), sensors, touch screen displays and memory, and backplanes of displays.
導電物件Conductive object
本發明提供之導電物件包括具有一第一支撐側及一相對第二支撐側之一透明基板。此等相對支撐側係指透明基板之平坦側而非其邊沿。 The conductive article provided by the present invention comprises a transparent substrate having a first support side and a second opposite support side. These opposing support sides refer to the flat side of the transparent substrate rather than its edges.
一透明基板之選擇通常取決於用於一預定裝置之所得導電物件之期望效用。透明基板可為剛性或可撓性的,且在電磁頻譜之可見區域(例如至少410nm及最高為且包含700nm)內通常具有至少90%且通常至少95%之一綜合透射比。綜合透射比可使用如上文描述之一分光光度計及已知工序來判定。 The choice of a transparent substrate generally depends on the desired utility of the resulting conductive article for a predetermined device. The transparent substrate can be rigid or flexible and typically has an integrated transmittance of at least 90% and typically at least 95% within the visible region of the electromagnetic spectrum (eg, at least 410 nm and up to and including 700 nm). The integrated transmittance can be determined using a spectrophotometer as described above and known procedures.
適當透明基板包含但不限於玻璃、玻璃增強環氧層壓板、三乙酸纖維素、丙烯酸酯、聚碳酸酯、塗有黏著劑之聚合物透明基板、聚酯膜及透明複合物材料。用作透明聚合物基板之適當透明聚合物包含但不限於聚乙烯及其他聚烯烴、聚酯(諸如聚對苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚對苯二甲酸1,4-環己二甲酯、聚對苯二甲酸丁二醇酯)及其等共聚物、聚丙烯、聚乙烯乙酸酯、聚氨酯、聚醯胺、聚醯亞胺、聚碸、聚碳酸酯及其等混合物。其他有用之透明基板可由纖維素衍生物(諸如,纖維素酯、三乙酸纖維素、二乙酸纖維素、乙酸丙酸纖維素、乙酸丁酸纖維素、聚丙烯酸酯、聚醚醯亞胺)及其等混合物構成。 Suitable transparent substrates include, but are not limited to, glass, glass reinforced epoxy laminates, cellulose triacetate, acrylates, polycarbonates, polymeric transparent substrates coated with adhesives, polyester films, and transparent composite materials. Suitable transparent polymers for use as transparent polymer substrates include, but are not limited to, polyethylene and other polyolefins, polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN). , polybutylene terephthalate 1,4-cyclohexanedimethyl ester, polybutylene terephthalate) and copolymers thereof, polypropylene, polyvinyl acetate, polyurethane, polyamine, polyphthalamide Amines, polybenzazoles, polycarbonates, and the like. Other useful transparent substrates may be cellulose derivatives (such as cellulose esters, cellulose triacetate, cellulose diacetate, cellulose acetate propionate, cellulose acetate butyrate, polyacrylates, polyether phthalimides) and It is composed of a mixture of the same.
透明聚合物基板亦可包括相同或不同聚合組合物之兩個或更多個層,使得複合物透明基板(或層壓板)具有相同或不同層折射性質。 可處理透明基板之任一或兩個支撐側以概率任何安置層或圖案之黏附。例如,透明基板在一或兩個支撐側上可塗布有一聚合物黏附層、可經化學處理或經歷一電暈處理。 The transparent polymer substrate may also comprise two or more layers of the same or different polymeric compositions such that the composite transparent substrate (or laminate) has the same or different layer refractive properties. Any one or both of the support sides of the transparent substrate can be treated to probabilize any adhesion of the placement layer or pattern. For example, the transparent substrate may be coated with a polymeric adhesion layer on one or both of the support sides, may be chemically treated or subjected to a corona treatment.
可使用市售之定向及非定向透明聚合物膜(諸如雙向拉伸聚丙烯或聚酯)。此等透明基板可含有顏料、氣隙或泡沫空隙,前提係能獲得所需綜合透射比。 Commercially available oriented and non-oriented transparent polymeric films such as biaxially oriented polypropylene or polyester can be used. These transparent substrates may contain pigments, air gaps or foam voids, provided that the desired overall transmittance is achieved.
用於製造可撓性之電子裝置或觸控式螢幕組件之可撓性透明基板促進快速捲動式製造。Estar®聚對苯二甲酸乙二酯膜及三乙酸纖維素膜係用於製造可撓性透明基板之特別有用之材料。 The flexible transparent substrate used to fabricate flexible electronic devices or touch screen assemblies facilitates rapid scroll manufacturing. Estar ® polyethylene terephthalate film, a cellulose triacetate film system for producing a flexible transparent substrate material of particularly useful pair.
透明基板可具有至少20μm且最高為且包含300μm或通常至少75μm且最高為且包含200μm之一厚度。抗氧化劑、增亮劑、抗靜電或導電劑、塑化劑及其他已知添加劑若需要可以熟習此項技術者將容易明白之量被併入至透明基板中,前提係保持所需綜合透射比。 The transparent substrate can have a thickness of at least 20 μm and up to and including 300 μm or typically at least 75 μm and up to and including 200 μm. Antioxidants, brighteners, antistatic or conductive agents, plasticizers, and other known additives can be incorporated into a transparent substrate if desired by those skilled in the art, provided that the desired overall transmittance is maintained. .
導電物件可在透明基板之至少第一支撐側上具有:(a)一導電金屬(諸如銀)網格,(b)一導電金屬(諸如銀)連接件,其電連接至該導電金屬網格,及視情況,(c)透明區域,其在該導電金屬網格及該導電金屬連接件兩者外部,其中:(i)該導電金屬連接件包括至少一根金屬(例如銀)主導線,該至少一根金屬(例如銀)主導線包括電連接至該至少一根金屬主導線之一端處之金屬端導線之兩根或更多根金屬微導線,該至少一根金屬主導線中之該兩根或更多根金屬微導線及該金屬端導線形成一捆裝型樣;(ii)各金屬微導線之平均長度係至少1mm;且 (iii)該導電金屬連接件具有小於68%之一綜合透射比。 The electrically conductive article may have on the at least first support side of the transparent substrate: (a) a conductive metal (such as silver) grid, (b) a conductive metal (such as silver) connector electrically connected to the conductive metal grid And optionally, (c) a transparent region external to both the conductive metal mesh and the conductive metal connector, wherein: (i) the conductive metal connector comprises at least one metal (eg, silver) main conductor, The at least one metal (eg, silver) main conductor includes two or more metal microwires electrically connected to the metal end conductor at one end of the at least one metal main conductor, the at least one of the metal main conductors Two or more metal microwires and the metal end wires form a bundle pattern; (ii) each metal microwire has an average length of at least 1 mm; (iii) The conductive metal connector has a combined transmittance of less than 68%.
包含透明基板及在一或兩個支撐側上之所有隨附層之導電物件被視為在觸摸區域(其中形成導電金屬網格)及導電金屬網格及導電金屬連接件外部之其他透明區域中透明,此意指在電磁頻譜之可見區域(例如自410nm至700nm)內透過整個導電物件之此等觸摸區域及其他透明區域之綜合透射比係70%或更大,或更有可能至少85%或甚至90%或更大。如上文描述般量測綜合透射比。 Conductive articles comprising a transparent substrate and all of the accompanying layers on one or both of the support sides are considered to be in the touch area (where the conductive metal grid is formed) and the conductive metal grid and other transparent areas outside the conductive metal connectors Transparent, which means that the integrated transmittance of such touch regions and other transparent regions that pass through the entire conductive object in the visible region of the electromagnetic spectrum (eg, from 410 nm to 700 nm) is 70% or greater, or more likely at least 85%. Or even 90% or more. The overall transmittance is measured as described above.
然而,導電金屬連接件之透明度歸因於形成於該連接件區域中之金屬材料之較高覆蓋區域而較小。例如,由導電金屬圖案構成之此等導電金屬連接件通常具有小於68%或小於50%或甚至小於40%之一綜合透射比。 However, the transparency of the conductive metal connector is small due to the higher coverage area of the metallic material formed in the connector region. For example, such conductive metal connectors composed of conductive metal patterns typically have a combined transmittance of less than 68% or less than 50% or even less than 40%.
導電金屬網格及導電金屬連接件可按如下文描述之各個工序形成於適當透明基板上。下文亦描述了各種必要及選用特徵(i)至(v)。雖然以下討論主要係針對使用光敏鹵化銀以實行本發明,但應瞭解本文中描述用來製備發明導電物件之發明方法不限於此特定技術。一旦熟習此項技術者自本文教示瞭解導電物件之所需特徵,熟習此項技術者將容易明白如何使用各種化學及材料技術來實現所需結果。 The conductive metal mesh and the conductive metal connectors can be formed on a suitable transparent substrate in accordance with various processes as described below. Various necessary and optional features (i) through (v) are also described below. While the following discussion is primarily directed to the use of light sensitive silver halide to practice the invention, it should be understood that the inventive methods described herein for preparing conductive articles of the invention are not limited to this particular technique. Those skilled in the art will readily appreciate how to use various chemical and material techniques to achieve desired results, as taught by those skilled in the art to understand the desired characteristics of conductive articles.
用於提供導電物件之技術Technology for providing conductive objects
導電物件可以各種方式製備,該等方式包含使用包括可透過一適當遮罩成像以形成導電銀金屬圖案(下文詳細描述)之鹵化銀乳劑之前驅體物件、使用「壓印及填充」技術,及使用可以在印刷時導電(例如作為導電油墨)或隨後可無電極式電鍍以形成導電圖案之圖案(例如光可固化圖案)印刷之組合物(例如,光可固化組合物)。 The electrically conductive article can be prepared in a variety of ways, including using a silver halide emulsion precursor article that includes imaging through a suitable mask to form a conductive silver metal pattern (described in detail below), using "imprint and fill" techniques, and A composition (eg, a photocurable composition) that can be printed (eg, as a conductive ink) or subsequently electrolessly plated to form a pattern of conductive patterns (eg, a photocurable pattern) can be used.
「壓印及填充」技術: "embossing and filling" technology:
「壓印及填充」技術通常涉及使用壓印程序(例如壓印微影)在一透明基板上形成微導線圖案。例如,導電微導線可形成於微通道中, 該等微通道已經壓印(emboss)或壓印(imprint)至諸如下文描述之一材料之一基板上之一光可固化組合物中。可藉由表面上形成有脊部之一顛倒圖案之一母版(或模具)將微通道之一圖案壓印(壓印)至光可固化組合物層上。經壓印可固化組合物然後可在釋放母版(模具)之前由光固化。一額外之熱固化步驟可用於進一步固化該組合物。一導電組合物可被塗布在基板上方,從而流入所形成之微通道中。通常希望例如藉由擦拭去除微通道之間的過量導電組合物。微通道中剩餘之導電組合物可例如藉由加熱及曝露於鹽酸蒸汽而固化。提供及填充微通道以在共同步驟中形成導電金屬網格及導電金屬連接件兩者。然後可使用已知處理去除過量之固化導電組合物。 The "embossing and filling" technique typically involves forming a microwire pattern on a transparent substrate using an embossing procedure, such as embossing lithography. For example, conductive microwires can be formed in the microchannels, The microchannels have been embossed or imprinted into a photocurable composition on a substrate such as one of the materials described below. One of the microchannels may be imprinted (embossed) onto the photocurable composition layer by a master (or mold) having an inverted pattern of one of the ridges formed on the surface. The embossable curable composition can then be cured by light prior to release of the master (mold). An additional thermal cure step can be used to further cure the composition. A conductive composition can be applied over the substrate to flow into the formed microchannels. It is generally desirable to remove excess conductive composition between the microchannels, for example by wiping. The remaining conductive composition in the microchannel can be cured, for example, by heating and exposure to hydrochloric acid vapor. The microchannels are provided and filled to form both a conductive metal mesh and a conductive metal connector in a common step. Excessive cured conductive composition can then be removed using known treatments.
例如在共同待決且共同讓與之2015年3月5日之(Wang等人申請於2013年9月4日)之美國公開案第2015/0064426號、2015年3月5日之(Wang等人申請於2013年9月4日)美國公開案第2015/0060113號及2015年6月4日之(Wang等人申請於2013年12月3日)美國公開案第2015/0156886號中描述了用於使用此技術製備導電物件之一些有用工序及組合物。 For example, in the United States Public Notice No. 2015/0064426, which was jointly pending and jointly granted by March 5, 2015 (Wang et al. applied for September 4, 2013), and on March 5, 2015 (Wang et al. The application is described in US Publication No. 2015/0060113 and June 4, 2015 (Wang et al., filed on Dec. 3, 2013), US Publication No. 2015/0156886. Some useful procedures and compositions for making conductive articles using this technique.
額外之光可固化技術:Additional light curable technology:
例如在WO 2013/062630(Petcavich))及WO 2013/063051(Petcavich等人)中描述了一些其他有用之光可固化組合物及其製備導電物件(包含此等物件之透明連續卷)之用途。 Some other useful photocurable compositions and their use in the preparation of electrically conductive articles, including transparent continuous rolls of such articles, are described, for example, in WO 2013/062630 (Petcavich) and in WO 2013/063051 (Petcavich et al.).
例如,導電金屬網格及導電金屬連接件可使用可提供用於無電極式電鍍程序之晶種金屬觸媒之光可固化組合物形成於透明基板之一或兩個支撐側上。例如,光可固化組合物可包括酸催化之光可固化化學物質、自由基光可固化化學物質或兩種類型之化學物質,但本發明不限於所描述之光可固化化學物質且可使用可進一步包括晶種金屬觸媒之任何已知光可固化組合物而實行。 For example, a conductive metal mesh and a conductive metal connector can be formed on one or both of the support sides using a photocurable composition that provides a seed metal catalyst for an electrodeless plating process. For example, the photocurable composition can include an acid catalyzed photocurable chemical, a free radical photocurable chemical, or both types of chemicals, although the invention is not limited to the photocurable chemicals described and can be used It is further practiced to include any known photocurable composition of a seed metal catalyst.
在一些實施例中,有用之光可固化組合物包括一或多種UV可固化組分,其中之至少一者係酸催化之光可固化組分。此等光可固化組合物可進一步包括參與造成光可固化組分之光固化之酸基之產生之光產酸劑。 In some embodiments, useful photocurable compositions include one or more UV curable components, at least one of which is an acid catalyzed photocurable component. These photocurable compositions may further comprise a photoacid generator that participates in the formation of an acid group that causes photocuring of the photocurable component.
一些有用之酸催化光可固化組分係光可固化環氧材料。陽離子光可固化環氧材料可為具有至少一個環氧乙烷環之有機化合物。此等環氧材料包含單體環氧化合物及聚合類型之環氧化物,且可為脂肪族、脂環族、芳香族或雜環族。此等材料通常每分子平均具有至少一可聚合環氧基,或通常每分子具有至少大約1.5個或甚至至少大約2個可聚合環氧基。 Some useful acid catalyzed photocurable components are photocurable epoxy materials. The cationic photocurable epoxy material can be an organic compound having at least one oxirane ring. These epoxy materials comprise a monomeric epoxy compound and a polymeric type of epoxide, and may be aliphatic, alicyclic, aromatic or heterocyclic. Such materials typically have an average of at least one polymerizable epoxy group per molecule, or typically at least about 1.5 or even at least about 2 polymerizable epoxy groups per molecule.
各種化合物可用作光產酸劑以產生一適當之酸來參與環氧材料之光固化。此等「光產酸劑」之一些在本質上係酸性的且其他者在本質上係非離子的。適於在本發明之實踐中作為光產酸劑之鎓鹽光產酸劑包含但不限於:重氮鹽、磷鹽、碘鹽或硫鹽,包含多芳基重氮鹽、磷鹽、碘鹽及硫鹽。 Various compounds can be used as photoacid generators to produce a suitable acid to participate in photocuring of the epoxy material. Some of these "photoacid generators" are acidic in nature and others are non-ionic in nature. An alkali salt photoacid generator suitable as a photoacid generator in the practice of the present invention includes, but is not limited to, a diazonium salt, a phosphorus salt, an iodide salt or a sulfur salt, and includes a polyaryl diazonium salt, a phosphorus salt, and an iodine salt. Salt and sulfur salts.
非離子光產酸劑亦係有用的,該等化合物包含但不限於重氮甲烷衍生物、乙二醛肟衍生物、雙碸衍生物及二磺醯(disulfono)衍生物。 Nonionic photoacid generators are also useful, including but not limited to diazomethane derivatives, glyoxal hydrazine derivatives, biguanide derivatives, and disulfono derivatives.
本文中描述之一些光可固化組合物(尤其含有光可聚合環氧材料及光產酸劑之組合物)可含有一或多種電子供體光敏劑以改良光固化效率。 Some photocurable compositions (especially compositions comprising a photopolymerizable epoxy material and a photoacid generator) described herein may contain one or more electron donor photosensitizers to improve photocuring efficiency.
在光可固化技術之其他實施例中,光可固化組合物可包括一或多種UV可固化組分,其中之至少一者係一自由基光可固化組分,且光可固化組合物可進一步包括一自由基光引發劑以在光固化期間提供自由基。 In other embodiments of the photocurable technology, the photocurable composition can include one or more UV curable components, at least one of which is a free radical photocurable component, and the photocurable composition can be further A free radical photoinitiator is included to provide free radicals during photocuring.
可存在該一或多種自由基可聚合化合物以提供自由基可聚合官 能度,包含烯化不飽和可聚合單體、低聚物或聚合物,例如單官能或多官能丙烯酸酯(亦包含甲基丙烯酸酯)。此等自由基可聚合化合物包括至少一種烯化不飽和可聚合化學鍵(半族)且其等在許多實施例中可包括此等不飽和半族之兩者或更多者以上。 The one or more free radical polymerizable compounds may be present to provide a free radical polymerizable officer Energy, comprising an ethylenically unsaturated polymerizable monomer, oligomer or polymer, such as a monofunctional or polyfunctional acrylate (also comprising methacrylate). Such free radical polymerizable compounds include at least one ethylenically unsaturated polymerizable chemical bond (half group) and such may, in many embodiments, include both or more of such unsaturated halves.
一或多種自由基光引發劑亦可存在於光可固化組合物中以產生自由基。此等自由基光引發劑包含能夠在曝露於光固化輻射(諸如紫外線或可見輻射)時產生自由基之任一種化合物。 One or more free radical photoinitiators may also be present in the photocurable composition to generate free radicals. Such free radical photoinitiators comprise any compound capable of generating free radicals upon exposure to photocuring radiation, such as ultraviolet light or visible radiation.
本文中描述之光可固化組合物通常包含可充當用於無電極式電鍍之晶種金屬催化部位之適當金屬粒子。通常只使用一種類型之金屬粒子,但亦可能包含來自相同或不同類別之金屬且不彼此干擾之金屬粒子之混合物。 The photocurable compositions described herein typically comprise suitable metal particles that can serve as a seed metal catalytic site for electroless plating. Usually only one type of metal particle is used, but it is also possible to contain a mixture of metal particles from the same or different classes of metals that do not interfere with each other.
有用之金屬粒子可選自一或多個類別之貴金屬、半貴金屬、第IV族金屬或其等組合。有用之貴金屬粒子包含但不限於金、銀、鈀、鉑、銠、銥、錸、汞、釕及鋨之粒子。半貴金屬之有用粒子包含但不限於鐵、鈷、鎳、銅、碳、鋁、鋅及鎢之粒子。第IV族金屬之有用粒子包含但不限於錫、鈦及鍺之粒子。貴金屬粒子(諸如銀、鈀及鉑之粒子)特別有用,且鎳及銅之半貴金屬粒子亦特別有用。在第IV族金屬類別中錫粒子特別有用。在許多實施例中,在光可固化組合物中使用銀或銅粒子。 Useful metal particles can be selected from one or more of the classes of precious metals, semi-precious metals, Group IV metals, or combinations thereof. Useful noble metal particles include, but are not limited to, particles of gold, silver, palladium, platinum, rhodium, ruthenium, iridium, mercury, osmium, and iridium. Useful particles of semi-precious metals include, but are not limited to, particles of iron, cobalt, nickel, copper, carbon, aluminum, zinc, and tungsten. Useful particles of Group IV metals include, but are not limited to, particles of tin, titanium, and ruthenium. Precious metal particles such as particles of silver, palladium and platinum are particularly useful, and semi-precious metal particles of nickel and copper are also particularly useful. Tin particles are particularly useful in the Group IV metal category. In many embodiments, silver or copper particles are used in the photocurable composition.
金屬粒子可被分散在各種有機溶劑中,且在存在光可固化組合物之其他組分時可具有改良之分散性。有用之分散劑在此項技術中係熟知的且若需要亦可存在該分散劑。用於分散金屬粒子之方法包含但不限於球磨、磁攪動、高速均化、高壓均化及超聲波處理。 The metal particles can be dispersed in various organic solvents and have improved dispersibility in the presence of other components of the photocurable composition. Useful dispersing agents are well known in the art and may be present if desired. Methods for dispersing metal particles include, but are not limited to, ball milling, magnetic agitation, high speed homogenization, high pressure homogenization, and ultrasonic treatment.
當使用塗有碳之金屬粒子時,該等粒子可經設計以具有等於或小於0.6μm或小於0.2μm或更有可能小於0.1μm之一中數粒徑。此等塗有碳之金屬粒子通常具有0.005μm之一最小中數直徑。中數粒徑 [Dv(50%)]可使用一動態光散射方法判定。例如,此一方法可使用可購自馬文儀器有限公司(Malvern Instruments,Ltd)之Malvern Zetasizer Nano ZS而實行。 When carbon coated metal particles are used, the particles may be designed to have a median particle diameter equal to or less than 0.6 μm or less than 0.2 μm or more likely to be less than 0.1 μm. These carbon-coated metal particles typically have a minimum median diameter of one of 0.005 μm. Median particle size [Dv (50%)] can be determined using a dynamic light scattering method. For example, such a method can be carried out using a Malvern Zetasizer Nano ZS available from Malvern Instruments, Ltd.
光可固化組合物通常被提供在充當一無水(有機)溶劑之一適當之有機稀釋劑中或光可固化組合物之組分溶解或分散於其中之溶劑之組合中。當一或多種光可固化組分(如上文描述)作為液態有機化合物存在時,該一或多種光可固化組分可充當有機稀釋劑,且單獨之惰性有機溶劑不一定係必需的。 The photocurable composition is typically provided in a combination of a suitable organic diluent which acts as one of an anhydrous (organic) solvent or a solvent in which the components of the photocurable composition are dissolved or dispersed. When one or more photocurable components (as described above) are present as a liquid organic compound, the one or more photocurable components can act as an organic diluent, and a separate inert organic solvent is not necessarily required.
光敏鹵化銀技術:Light sensitive silver halide technology:
可使用導電膜元件前驅體實現提供根據本發明之導電物件,該等導電膜元件前驅體包括(若干)光敏鹵化銀但其通常不含足以提供彩色攝影影像之化學物質。因此,此等「前驅體」被視為在曝光及顯影後形成金屬銀影像之黑白光敏材料,且係不形成彩色影像的。 Conductive article members in accordance with the present invention can be implemented using conductive film element precursors that include (several) light sensitive silver halide but which typically do not contain sufficient chemicals to provide color photographic images. Therefore, these "precursors" are considered to be black and white photosensitive materials that form metallic silver images after exposure and development, and do not form color images.
可藉由以一適當方式在一適當透明基板之一或兩個支撐側(或平坦側而非非支撐邊沿)上提供一非彩色(即,形成銀影像之黑白)光敏鹵化銀乳劑層來形成前驅體。各光敏層包括一適當之銀覆蓋(例如至少2500mg Ag/m2或至少3500mg Ag/m2但通常小於5000mg Ag/m2(例如最高為且包含4950mg Ag/m2)之總銀覆蓋)之一鹵化銀或鹵化銀之一混合物。然而,如此項技術中所熟知,可使用更大量之銀覆蓋。因此,各光敏層具有足夠之鹵化銀固有或外加光譜敏化以對預選定成像輻照(下文描述)具有光敏性。在透明基板之相對支撐側上,光敏層可具有相同或不同組合物及光譜敏化。 Formed by providing a non-color (ie, black-and-white) black-sensitive light-sensitive silver halide emulsion layer on one or both of the support sides (or the flat side rather than the unsupported edge) on a suitable transparent substrate in a suitable manner Precursor. Each photosensitive layer comprises a suitable silver cover (eg, at least 2500 mg Ag/m 2 or at least 3500 mg Ag/m 2 but typically less than 5000 mg Ag/m 2 (eg, up to and containing 4950 mg Ag/m 2 ) of total silver coverage) A mixture of one silver halide or silver halide. However, as is well known in the art, a greater amount of silver coverage can be used. Thus, each photosensitive layer has sufficient silver halide inherent or external spectral sensitization to be photosensitive to pre-selected imaging radiation (described below). The photosensitive layers can have the same or different compositions and spectral sensitization on the opposite support sides of the transparent substrate.
該一或多種鹵化銀被分散在如下文描述之一或多種合適之親水黏合劑或膠體內。 The one or more silver halides are dispersed in one or more suitable hydrophilic binders or gels as described below.
此等前驅體因此被以此一方式逐影像地曝光且處理(或加工)以將銀陽離子轉換為銀金屬粒子(藉由通過還原),且此經處理前驅體然後 可變為一導電物件。 These precursors are thus imagewise exposed and processed (or processed) in this manner to convert silver cations into silver metal particles (by reduction), and the treated precursor is then processed Can become a conductive object.
前驅體可在透明基板之各支撐側上具有一必要層,該必要層係一光敏鹵化銀乳劑層。此必要層可只被安置在透明基板之一個支撐側上,但在許多雙重實施例中,其被安置在透明基板之第一及相對第二支撐側兩者上。選用層(諸如親水外塗層及濾光染料層)亦可存在於任一或兩個支撐側上且在下文加以描述,但對於實現本發明之所需優點,選用層並非必要的。 The precursor may have a necessary layer on each of the support sides of the transparent substrate, the necessary layer being a light-sensitive silver halide emulsion layer. This necessary layer may be disposed only on one of the support sides of the transparent substrate, but in many dual embodiments it is disposed on both the first and opposite second support sides of the transparent substrate. The optional layers, such as hydrophilic outer coatings and filter dye layers, may also be present on either or both of the support sides and are described below, but it is not necessary to achieve the desired advantages of the present invention.
此等層中之(若干)鹵化銀包括可在逐影像曝光各光敏鹵化銀乳劑層時根據所需圖案轉換為銀金屬粒子之一或多種鹵化銀之銀陽離子。此曝光通常係藉由透過一遮罩元件成像而實現,該遮罩元件經設計具有針對導電金屬電極網格及導電金屬連接件導線圖案兩者之預定圖案。由此曝光提供之(若干)潛影然後可使用已知之銀顯影工序及化學物質(下文描述)而顯影為(若干)所需銀金屬影像。鹵化銀(或鹵化銀之組合)係光敏的,此意指通常將自UV至可見光之輻射(例如,至少200nm且最高為且包含750nm輻射)用於將銀陽離子轉換為一潛影中之銀金屬粒子。在一些實施例中,鹵化銀結合一熱敏銀鹽(諸如山崳酸銀)存在,且光敏鹵化銀乳劑層可為光敏且熱敏的(即,對諸如紅外線輻射之熱成像能量敏感)。 The (several) silver halide in such layers includes silver cations that can be converted to one or more silver halide grains according to a desired pattern upon exposure of each photosensitive silver halide emulsion layer. This exposure is typically achieved by imaging through a masking element that is designed with a predetermined pattern for both the conductive metal electrode grid and the conductive metal connector wire pattern. The (several) latent image provided by this exposure can then be developed into (several) desired silver metal images using known silver development processes and chemicals (described below). Silver halide (or a combination of silver halides) is photosensitive, which means that radiation from UV to visible light (eg, at least 200 nm and up to and including 750 nm radiation) is typically used to convert silver cations into silver in a latent image. Metal particles. In some embodiments, the silver halide is present in combination with a heat sensitive silver salt such as silver behenate, and the light sensitive silver halide emulsion layer can be photosensitive and heat sensitive (ie, sensitive to thermal imaging energy such as infrared radiation).
有用之光敏鹵化銀可為(例如)氯化銀、溴化銀、氯溴碘化銀或溴氯碘化銀、氯溴化銀、溴氯化銀或溴碘化銀,其等被製備為個別組合物(或乳劑)。在鹵化銀名稱中各種鹵化物以鹵化物含量之降序列出。此外,個別鹵化銀乳劑可經製備及混合以形成在透明基板之相同或不同支撐側上使用之鹵化銀乳劑之一混合物。一般而言,有用之鹵化銀包括最高為且包含100莫耳百分數之氯化物或最高為且包含100莫耳百分數之溴化物,及最高為且包含5莫耳百分數之碘化物,其等全部基於總銀。此等鹵化銀通常稱作「高氯化物」或「高溴化物」鹵化 銀,且分別可用於形成「高氯化物」或「高溴化物」乳劑。 Useful photosensitive silver halides can be, for example, silver chloride, silver bromide, silver chlorobromide iodide or silver bromide iodide, silver chlorobromide, silver bromochloride or silver iodobromide, which are prepared as individual compositions (or emulsions). ). In the name of silver halide, various halides are listed in descending order of halide content. Additionally, individual silver halide emulsions can be prepared and mixed to form a mixture of one of the silver halide emulsions used on the same or different support sides of the transparent substrate. In general, useful silver halides include up to and including 100 mole percent chloride or up to and including 100 mole percent bromide, and up to and including 5 mole percent iodide, all based on Total silver. These silver halides are often referred to as "high chloride" or "high bromide" halogenation. Silver, and can be used to form "high chloride" or "high bromide" emulsions, respectively.
各光敏鹵化銀乳劑層中使用之鹵化銀顆粒通常具有至少30nm且最高為且包含300nm或更有可能至少50nm且最高為且包含200nm之一ESD。 The silver halide grains used in each of the photosensitive silver halide emulsion layers typically have an ESD of at least 30 nm and up to and including 300 nm or more likely at least 50 nm and up to and including 200 nm.
各光敏鹵化銀乳劑層中之總銀之覆蓋希望係至少2500mg Ag/m2及通常至少3500mg Ag/m2且可小於5000mg Ag/m2,但亦可使用更高之量。 The coverage of the total silver in each of the light sensitive silver halide emulsion layers is desirably at least 2500 mg Ag/m 2 and typically at least 3500 mg Ag/m 2 and may be less than 5000 mg Ag/m 2 , although higher amounts may be used.
各光敏鹵化銀乳劑層之乾燥厚度為通常至少0.5μm且最高為且包含12μm,且尤其為至少0.5μm且最高為且包含7μm。 The dry thickness of each photosensitive silver halide emulsion layer is typically at least 0.5 μm and up to and including 12 μm, and especially at least 0.5 μm and up to and including 7 μm.
最終乾燥之光敏鹵化銀乳劑層可由可使用相同或不同之鹵化銀乳劑配方應用之一或多個個別經塗布光敏鹵化銀乳劑子層製成。各子層可由(若干)相同或不同之鹵化銀、親水黏合劑或膠體及附加物構成。光敏鹵化銀乳劑子層可具有相同或不同量之銀含量。 The final dried photosensitive silver halide emulsion layer can be made from one or more individual coated light sensitive silver halide emulsion sub-layers that can be used with the same or different silver halide emulsion formulations. Each sublayer may be composed of (several) identical or different silver halides, hydrophilic binders or colloids and addenda. The light sensitive silver halide emulsion sublayers can have the same or different amounts of silver content.
第一支撐側上之光敏鹵化銀乳劑層中使用之(若干)光敏鹵化銀可與相對第二支撐側之光敏鹵化銀乳劑層中使用之(若干)光敏鹵化銀相同或不同。 The (several) photosensitive silver halide used in the photosensitive silver halide emulsion layer on the first support side may be the same as or different from the photosensitive silver halide (s) used in the photosensitive silver halide emulsion layer on the second support side.
光敏鹵化銀顆粒(及如下文描述之與其等相關聯之任何附加物)被分散(通常均勻地)在一或多種適當親水黏合劑或膠體中以形成一親水鹵化銀乳劑。此等親水黏合劑或膠體之實例包含但不限於明膠及明膠衍生物、聚乙烯醇(PVA)、聚乙烯吡咯烷酮(PVP)、酪蛋白及其等混合物。由英國漢普郡(Hants)埃姆沃斯(Emsworth)PO10 7DQ之肯尼士.梅森(Kenneth Mason)出版社出版之研究披露(Research Disclosure)1994年9月36544期之章節IX中亦描述了適當之親水膠體及乙烯基聚合物及共聚物。特別有用之親水膠體係明膠或一明膠衍生物,其中若干種在此項技術中係熟知的。 The photosensitive silver halide grains (and any addenda associated therewith as described below) are dispersed (generally uniformly) in one or more suitable hydrophilic binders or colloids to form a hydrophilic silver halide emulsion. Examples of such hydrophilic binders or colloids include, but are not limited to, gelatin and gelatin derivatives, polyvinyl alcohol (PVA), polyvinylpyrrolidone (PVP), casein, and the like. Kenneth by PO10 7DQ, Emsworth, Hants, UK. Research Disclosure, published by Kenneth Mason, Section IX, September 26, 464, also describes suitable hydrocolloids and vinyl polymers and copolymers. Particularly useful hydrophilic gel system gelatin or a gelatin derivative, several of which are well known in the art.
各光敏鹵化銀乳劑層中之親水黏合劑或膠體之量可經適適為所 希望之特定乾燥厚度以及所併入之鹵化銀之量。其亦可經調適以滿足所需分散性、膨脹及層與透明基板之黏附性。親水黏合劑或膠體之量通常經控制以最大化導電物件中之所得銀金屬粒子之導電率。 The amount of hydrophilic binder or colloid in each photosensitive silver halide emulsion layer can be suitably adapted The particular dry thickness desired and the amount of silver halide incorporated. It can also be adapted to meet the desired dispersibility, swelling, and adhesion of the layer to the transparent substrate. The amount of hydrophilic binder or colloid is typically controlled to maximize the conductivity of the resulting silver metal particles in the electrically conductive article.
一般而言,該一或多種親水黏合劑或膠體係以至少10重量%且最高為且包含95重量%或更有可能至少10重量%且最高為且包含70重量%之一量而存在,其等全部基於乾燥之光敏鹵化銀乳劑層中之總固體。 In general, the one or more hydrophilic binders or gum systems are present in an amount of at least 10% by weight and up to and including 95% by weight or more likely at least 10% by weight and up to and including 70% by weight, All based on the total solids in the dried photosensitive silver halide emulsion layer.
一些有用之光敏鹵化銀乳劑層組合物具有一相對較高之銀離子/親水黏合劑(例如,明膠)重量(或體積)比。例如,銀離子(及最終銀金屬)與親水黏合劑或膠體(諸如明膠)(或其衍生物)之一特別有用重量比係至少0.1:1或甚至至少1.5:1且最高為且包含10:1。銀離子與親水黏合劑或膠體之一特別有用重量比可為至少2:1且最高為且包含5:1。其他重量比可容易調適用於一特定用途及乾燥層厚度。特別有用之銀離子/親水黏合劑(明膠)體積比小於0.5:1或甚至小於0.35:1。 Some useful light sensitive silver halide emulsion layer compositions have a relatively high weight ratio (or volume) of silver ion/hydrophilic binder (e.g., gelatin). For example, one of the silver ions (and the final silver metal) and the hydrophilic binder or colloid (such as gelatin) (or a derivative thereof) is particularly useful in a weight ratio of at least 0.1:1 or even at least 1.5:1 and up to and including 10: 1. A particularly useful weight ratio of silver ion to hydrophilic binder or colloid may be at least 2:1 and up to and including 5:1. Other weight ratios can be readily adapted to a particular application and dry layer thickness. A particularly useful silver ion/hydrophilic binder (gelatin) volume ratio is less than 0.5:1 or even less than 0.35:1.
親水黏合劑或膠體可結合經設計以使諸如明膠之特定親水黏合劑硬化之一或多種硬化劑使用。明膠及明膠衍生物之特別有用之硬化劑包含但不限於非聚合乙烯碸,諸如雙(乙烯基磺醯基)甲烷(BVSM)、雙(乙烯基磺醯基甲基)醚(BVSME)及1,2-雙(乙烯磺醯乙醯胺)乙烷(BVSAE)。若需要,可使用硬化劑之混合物。硬化劑可以熟習此項技術者將容易明白之任何適當之量併入至各光敏鹵化銀乳劑層中。 Hydrophilic binders or gels can be combined with one or more hardeners designed to harden a particular hydrophilic binder such as gelatin. Particularly useful hardeners for gelatin and gelatin derivatives include, but are not limited to, non-polymeric vinyl hydrazines such as bis(vinylsulfonyl)methane (BVSM), bis(vinylsulfonylmethyl)ether (BVSME) and 1 , 2-bis(vinylsulfonylacetamide)ethane (BVSAE). A mixture of hardeners can be used if desired. The hardener can be incorporated into each of the light sensitive silver halide emulsion layers in any suitable amount that will be readily apparent to those skilled in the art.
一般而言,各光敏鹵化銀乳劑層可經硬化使得其具有如由對元件橫截面之光學顯微鏡檢查判定之至少150%但小於300%之膨脹比,且該膨脹比可藉由使用適當量之在光敏鹵化銀乳劑層內之硬化劑或在各種處理溶液(下文描述)內之硬化劑而提供。 In general, each photosensitive silver halide emulsion layer can be hardened such that it has an expansion ratio of at least 150% but less than 300% as determined by optical microscopy of the cross-section of the element, and the expansion ratio can be achieved by using an appropriate amount A hardener in the photosensitive silver halide emulsion layer or a hardener in various treatment solutions (described below) is provided.
若需要,可使上文描述之有用之鹵化銀對任何適當波長之曝光 輻射敏化。可使用有機敏化染料,但若希望含有銀金屬粒子之導電物件為透明的,則在不使用可見光敏化染料之情況下使銀鹽對電磁頻譜之UV部分敏感可有利地避免出現不當之染料色斑。替代地,可使用鹵化銀而不進行超出其等固有之頻譜敏感性之頻譜敏化。 If desired, the useful silver halide described above can be exposed to any suitable wavelength Radiation sensitization. An organic sensitizing dye can be used, but if it is desired that the conductive article containing the silver metal particles be transparent, it is advantageous to prevent the silver salt from being sensitive to the UV portion of the electromagnetic spectrum without using a visible light sensitizing dye. Spot. Alternatively, silver halide can be used without spectral sensitization beyond its inherent spectral sensitivity.
可與鹵化銀包含在一起之附加物(包含化學及頻譜敏化劑、濾光染料、有機溶劑、增稠劑、摻雜劑、乳化劑、表面活性劑、穩定劑、硬化劑及防霧劑)之非限制實例被描述於研究披露1994年9月36544期及其中識別之許多出版物中。 Addenda that can be included with silver halide (including chemical and spectral sensitizers, filter dyes, organic solvents, thickeners, dopants, emulsifiers, surfactants, stabilizers, hardeners, and anti-fogging agents) Non-limiting examples of this are described in Research Disclosure, September 26, 354, and many of the publications identified therein.
含有可被還原至銀金屬粒子之鹵化銀顆粒之有用之鹵化銀乳劑可藉由顆粒生長之任何適當方法(例如藉由使用利用經設計以維持生長反應室中之銀離子濃度之一回饋系統進行之硝酸銀及鹽溶液之平衡雙重運行)而製備。已知之摻雜劑可自沉澱開始至結束均勻地引入或可被結構化至鹵化銀顆粒內之區域或帶中。有用之摻雜劑包含但不限於鋨摻雜劑、釕摻雜劑、鐵摻雜劑、銠摻雜劑、銥摻雜劑及氰基釕酸鹽摻雜劑。鋨摻雜劑與銥摻雜劑之一組合(諸如五氯亞硝醯鋨與銥摻雜劑之一組合)係有用的。化學敏化可藉由已知之鹵化銀化學敏化方法中之任一者而實行,該等方法例如單獨或結合金絡合物使用硫代硫酸鹽或另一不穩定硫化合物。 Useful silver halide emulsions containing silver halide grains that can be reduced to silver metal particles can be carried out by any suitable method of particle growth (eg, by using a feedback system designed to maintain silver ion concentration in the growth chamber) It is prepared by the balance of silver nitrate and salt solution. Known dopants may be introduced uniformly from the beginning to the end of the precipitation or may be structured into regions or zones within the silver halide grains. Useful dopants include, but are not limited to, antimony dopants, antimony dopants, iron dopants, antimony dopants, antimony dopants, and cyanophthalate dopants. A combination of a cerium dopant and one of the cerium dopants, such as one of pentachloronitrite and one of the cerium dopants, is useful. Chemical sensitization can be carried out by any of the known silver halide chemical sensitization methods, such as thiosulfate or another unstable sulfur compound, for example, alone or in combination with a gold complex.
有用之鹵化銀顆粒可為圓形立方體、八面體、圓形八面體、多面體、管狀或細管狀乳劑顆粒。此等鹵化銀顆粒可為規則非雙晶、規則雙晶或不規則雙晶的,具有立方或八面體面。在一項實施例中,鹵化銀顆粒可為具有小於0.5μm及至少0.05μm之一ESD之圓形立方體。 Useful silver halide grains can be round cubes, octahedrons, circular octahedrons, polyhedrons, tubular or fine tubular emulsion particles. These silver halide grains may be regular non-bimorphous, regular twin or irregular twin, having a cubic or octahedral surface. In one embodiment, the silver halide grains can be a circular cube having an ESD of less than 0.5 [mu]m and at least 0.05 [mu]m.
防霧劑及穩定劑可在適當情況下被添加以向鹵化銀乳劑賦予所需敏感性。有用之防霧劑包含例如氮雜茚,诸如四氮茚、四唑、苯並三唑、咪唑及苯並咪唑。可使用之具體防霧劑個別或組合地包含6-甲基-1,3,3a,7-四氮茚、1-(3-乙醯氨基苯基)-5-巰基四唑、6-硝基苯並咪 唑、2-甲基苯並咪唑及苯並三唑。 Antifogging agents and stabilizers may be added where appropriate to impart the desired sensitivity to the silver halide emulsion. Useful antifogging agents include, for example, azaindoles such as tetraazaindene, tetrazole, benzotriazole, imidazole and benzimidazole. The specific antifogging agent which can be used individually or in combination comprises 6-methyl-1,3,3a,7-tetrazinium, 1-(3-acetamidophenyl)-5-mercaptotetrazole, 6-nitrate Benzomidazole Oxazole, 2-methylbenzimidazole and benzotriazole.
必要之鹵化銀顆粒及親水黏合劑或膠體以及選用附加物可使用包含水及混水有機溶劑之適當乳劑溶劑而調配及塗布為鹵化銀乳劑。例如,用於製作鹵化銀乳劑或塗層配方之有用溶劑可為水、一醇(諸如甲醇)、一酮(諸如丙酮)、一醯胺(諸如甲醯胺)、一亞碸(諸如二甲亞碸)、一酯(諸如乙酸乙酯)、液態或低分子量聚乙烯醇,或一醚,或此等溶劑之組合。用於製備鹵化銀乳劑之一或多種溶劑之量可為總配方重量之至少30重量%且最高為且包含50重量%。此等塗層配方可使用此項技術中熟知的攝影乳劑製作工序中之任一者而製備。 The necessary silver halide grains and hydrophilic binders or colloids and optional additions may be formulated and coated as silver halide emulsions using a suitable emulsion solvent comprising water and a mixed organic solvent. For example, useful solvents for making silver halide emulsion or coating formulations can be water, monoalcohol (such as methanol), monoketone (such as acetone), monoamine (such as formamidine), monoterpene (such as dimethyl). Amine, a monoester (such as ethyl acetate), a liquid or low molecular weight polyvinyl alcohol, or a monoether, or a combination of such solvents. The amount of one or more solvents used to prepare the silver halide emulsion can be at least 30% by weight and up to and including 50% by weight of the total formulation weight. These coating formulations can be prepared using any of the photographic emulsion manufacturing procedures well known in the art.
雖然透明基板之任一或兩個支撐側上之光敏鹵化銀乳劑層可為前驅體中之最外層,但在許多實施例中,各光敏鹵化銀乳劑層上方可安置一親水外塗層。此親水外塗層可為前驅體中之最外層(即,在透明基板之任一或兩個支撐側上沒有特意放置在其上之任何層)。若透明基板之兩個支撐側皆包括一光敏鹵化銀層,則一親水外塗層可存在於透明基板之兩個支撐側上。因此,一第一親水外塗層被安置在第一光敏鹵化銀乳劑層上方,且一第二親水外塗層被安置在透明基板之相對第二支撐側上之一第二光敏鹵化銀乳劑層上方。在大部分實施例中,各親水外塗層直接安置在各光敏鹵化銀乳劑層上,此意指透明基板之支撐側上沒有介入層。此等親水外塗層之化學組成及乾燥厚度可相同或不同,但在大部分實施例中,其等在透明基板之兩個支撐側上具有基本上相同之化學組成及乾燥厚度。 While the photosensitive silver halide emulsion layer on either or both of the support sides of the transparent substrate can be the outermost layer of the precursor, in many embodiments, a hydrophilic outer coating can be disposed over each of the photosensitive silver halide emulsion layers. The hydrophilic outer coating can be the outermost layer of the precursor (i.e., any layer that is not specifically placed thereon on either or both of the support sides of the transparent substrate). If both support sides of the transparent substrate comprise a photosensitive silver halide layer, a hydrophilic outer coating may be present on the two support sides of the transparent substrate. Therefore, a first hydrophilic overcoat layer is disposed over the first photosensitive silver halide emulsion layer, and a second hydrophilic outer coating layer is disposed on the second photosensitive silver halide emulsion layer on the opposite second support side of the transparent substrate. Above. In most embodiments, each hydrophilic overcoat layer is disposed directly on each of the light sensitive silver halide emulsion layers, which means that there is no intervening layer on the support side of the transparent substrate. The chemical composition and dry thickness of the hydrophilic outer coatings may be the same or different, but in most embodiments, they have substantially the same chemical composition and dry thickness on the two support sides of the transparent substrate.
在一些實施例中,各親水外塗層(第一或第二或兩者)包括相同或不同量之一或多種鹵化銀,以在曝光及處理之後以至少5mg Ag/m2且最高為且包含150mg Ag/m2或以至少5mg Ag/m2且最高為且包含75mg Ag/m2之量提供銀金屬粒子。當存在時,各親水外塗層中之該一或多種鹵化銀可具有至少100nm且最高為且包含1000nm或至少150nm 且最高為且包含600nm之一顆粒ESD。在一些實施例中,各親水外塗層中之該一或多種鹵化銀具有大於上方安置親水外塗層之非彩色親水光敏層中之鹵化銀之顆粒ESD之一顆粒ESD。在各種實施例中,各親水外塗層中之(若干)鹵化銀包括多達100莫耳百分數溴化物或多達100莫耳百分數氯化物和最高為且包含3莫耳百分數碘化物,所有莫耳量基於總銀含量。在其他實施例中,各親水外塗層中之(若干)鹵化銀比上方安置親水外塗層之非彩色親水光敏層中之鹵化銀包括較多之氯化物。此關係在「雙重」導電膜元件前驅體中之透明基板之兩個支撐側上可為相同或不同的。 In some embodiments, each hydrophilic overcoat (first or second or both) comprises one or more silver halides of the same or different amounts to have at least 5 mg Ag/m 2 and the highest after exposure and treatment. Silver metal particles are provided in an amount comprising 150 mg Ag/m 2 or in an amount of at least 5 mg Ag/m 2 and up to and comprising 75 mg Ag/m 2 . When present, the one or more silver halides in each hydrophilic overcoat layer can have a particle ESD of at least 100 nm and up to and including 1000 nm or at least 150 nm and up to and including 600 nm. In some embodiments, the one or more silver halides in each of the hydrophilic outer coatings have a particle ESD that is greater than one of the silver halide particles ESD in the achromatic hydrophilic photosensitive layer on which the hydrophilic outer coating is disposed. In various embodiments, the silver halide(s) in each hydrophilic overcoat comprises up to 100 mole percent bromide or up to 100 mole percent chloride and up to and including 3 mole percent iodide, all Mo The amount of ear is based on total silver content. In other embodiments, the silver halide (s) in each of the hydrophilic outer coatings comprises more chloride than the silver halide in the achromatic hydrophilic photosensitive layer in which the hydrophilic outer coating is disposed. This relationship may be the same or different on the two support sides of the transparent substrate in the "dual" conductive film element precursor.
當存在時,鹵化銀被(通常均勻地)分散在各親水外塗層中之一或多種親水黏合劑或膠體內,該等親水黏合劑或膠體包含上文針對非彩色親水光敏層描述之黏合劑或膠體。在許多實施例中,相同之親水黏合劑或膠體可在前驅體之所有層中使用。然而,不同之親水黏合劑或膠體可在各種層中且在透明基板之任一或兩個支撐側上使用。各親水外塗層中之一或多種親水黏合劑或膠體之量係相同或不同的,且通常至少50重量%且最高為且包含100重量%或通常至少75重量%且最高為且包含98重量%,其等全部基於總之親水外塗層乾重。 When present, the silver halide is (usually uniformly) dispersed in one or more hydrophilic binders or gels in each of the hydrophilic outer coatings, the hydrophilic binders or gels comprising the bonding described above for the achromatic hydrophilic photosensitive layer Agent or colloid. In many embodiments, the same hydrophilic binder or colloid can be used in all layers of the precursor. However, different hydrophilic binders or gels can be used in various layers and on either or both of the support sides of the transparent substrate. The amount of one or more hydrophilic binders or colloids in each hydrophilic overcoat layer is the same or different, and is typically at least 50% by weight and up to and including 100% by weight or typically at least 75% by weight and up to and including 98 weights %, which are all based on the total dry weight of the hydrophilic outer coating.
在一些實施例中,親水外塗層可進一步包括一或多個輻射吸收體,諸如至少5mg/m2且最高為且包含100mg/m2之一量之UV輻射吸收體。 In some embodiments, the hydrophilic overcoat layer may further comprise one or more radiation absorbers, such as a UV radiation absorber of at least 5 mg/m 2 and up to and including 100 mg/m 2 .
若不存在鹵化銀,則使用相同之親水黏合劑或膠體,且在此等實施例中,親水黏合劑或膠體可包括總親水外塗層乾重之最多100重量%。 If silver halide is not present, the same hydrophilic binder or colloid is used, and in such embodiments, the hydrophilic binder or colloid may comprise up to 100% by weight of the total hydrophilic overcoat dry weight.
各親水外塗層亦可包括用於一親水黏合劑或膠體之一或多種硬化劑(例如明膠或明膠衍生物)。上文描述了有用之硬化劑。 Each hydrophilic overcoat may also include one or more hardeners (eg, gelatin or gelatin derivatives) for a hydrophilic binder or colloid. Useful hardeners are described above.
各親水外塗層之乾燥厚度可為至少100nm且最高為且包含800 nm或更特定地至少300nm且最高為且包含500nm。在含有鹵化銀之實施例中,親水外塗層中之顆粒ESD與乾燥厚度比可自0.25:1至1.75:1且包含1.75:1或更有可能自0.5:1至1.25:1且包含1.25:1。 Each of the hydrophilic outer coatings may have a dry thickness of at least 100 nm and up to and including 800 Nm or more specifically at least 300 nm and up to and including 500 nm. In embodiments containing silver halide, the ratio of particle ESD to dry thickness in the hydrophilic overcoat can range from 0.25:1 to 1.75:1 and comprises 1.75:1 or more likely from 0.5:1 to 1.25:1 and contains 1.25 :1.
除了上文描述之位於透明基板之一或兩個支撐側上之層和組分之外,前驅體及導電物件亦可包含並非必要但可提供額外性質或益處之其他層,該等其他層包含但不限於輻射吸收濾光層、黏附層及如黑白攝影領域中已知之其他層。輻射吸收濾光層亦可被稱作「防光暈」層,其等可位於必要層與透明基板之各支撐側之間。例如,各支撐側可具有安置在其正上方且安置在光敏鹵化銀乳劑層正下方之一輻射吸收濾光層。此類輻射吸收濾光層可包含在電磁頻譜之UV、紅色、綠色或藍色區域中吸收之一或多種濾光染料或其等任何組合,且可位於透明基板與透明基板之各或兩個支撐側上之光敏鹵化銀乳劑層之間。 In addition to the layers and components described above on one or both of the support sides of the transparent substrate, the precursor and conductive article may also include other layers that are not necessary but may provide additional properties or benefits, and such other layers include However, it is not limited to radiation absorbing filter layers, adhesion layers, and other layers known in the art of black and white photography. The radiation absorbing filter layer may also be referred to as an "antihalation" layer, which may be located between the necessary layers and the respective support sides of the transparent substrate. For example, each support side can have a radiation absorbing filter layer disposed directly above it and disposed directly beneath the photosensitive silver halide emulsion layer. Such a radiation absorbing filter layer may comprise one or more filter dyes or any combination thereof absorbed in the UV, red, green or blue regions of the electromagnetic spectrum, and may be located on each or both of the transparent substrate and the transparent substrate. Between the light-sensitive silver halide emulsion layers on the support side.
有用於本發明之實踐之雙重導電膜元件前驅體可在透明基板之相對第二支撐側上包括一第二光敏鹵化銀乳劑層且視需要包括安置在第二光敏鹵化銀乳劑層上方之一第二親水外塗層。一輻射吸收濾光層可安置在透明基板之相對第二支撐側與第二光敏鹵化銀乳劑層之間,該輻射吸收濾光層可與透明基板之第一支撐側上之輻射吸收濾光層相同或不同。例如,此等輻射吸收濾光層可包含一或多種UV輻射吸收化合物。 A dual conductive film element precursor useful in the practice of the present invention may include a second photosensitive silver halide emulsion layer on the opposite second support side of the transparent substrate and optionally include one disposed above the second photosensitive silver halide emulsion layer Two hydrophilic outer coatings. A radiation absorbing filter layer may be disposed between the opposite second support side of the transparent substrate and the second photosensitive silver halide emulsion layer, and the radiation absorbing filter layer and the radiation absorbing filter layer on the first support side of the transparent substrate Same or different. For example, such radiation absorbing filter layers can comprise one or more UV radiation absorbing compounds.
在許多雙重導電膜元件前驅體中,第二光敏鹵化銀乳劑層及一第二親水外塗層(若存在)分別具有與第一光敏鹵化銀乳劑層及第一親水外塗層相同之組成。 In many dual conductive film element precursors, the second photosensitive silver halide emulsion layer and a second hydrophilic outer coating (if present) have the same composition as the first photosensitive silver halide emulsion layer and the first hydrophilic outer coating, respectively.
上文描述之各種層可使用適當之組分及塗層溶劑調配且使用包含攝影行業中通常使用之工序(例如,液滴塗布、刮塗、幕塗、噴塗及漏斗塗布)之已知塗布工序應用於一適當透明基板(如上文描述)之一或兩個支撐側。各層配方可以單遍工序或以同時多層塗布工序應用於 透明基板之各支撐側。已知之乾燥技術可用於對所應用之配方之各者進行乾燥。 The various layers described above can be formulated using suitable components and coating solvents and using known coating procedures including those commonly used in the photographic industry (eg, droplet coating, knife coating, curtain coating, spray coating, and funnel coating). Applied to one or both of the support sides of a suitable transparent substrate (as described above). Each layer of the formulation can be applied in a single pass or in a simultaneous multi-layer coating process. Each support side of the transparent substrate. Known drying techniques can be used to dry each of the applied formulations.
所得導電膜元件前驅體可立即用於預期目的,或其等可以卷狀或片狀儲存以供後續使用。例如,前驅體可在製造期間捲起且經儲存以在一捲動式成像及處理程序中使用,且隨後被切割為所需大小及形狀。 The resulting conductive film element precursor can be used immediately for the intended purpose, or it can be stored in rolls or sheets for subsequent use. For example, the precursor can be rolled up during manufacture and stored for use in a scrolling imaging and processing procedure, and then cut to the desired size and shape.
為了逐影像地曝光一前驅體,一適當遮罩元件或遮罩元件之群組經設計具有用於最終形成於導電物件中之導電金屬網格及導電金屬連接件兩者之預定圖案。如上文提及,前驅體中之光敏鹵化銀乳劑層通常經設計以容納具有所需導電金屬網格之觸摸區域及導電金屬連接件導線圖案兩者以提供所設計電路。觸摸區域及電極連接件區域兩者均例如同時在一共同程序步驟中形成於透明基板之一或兩個支撐側上之相同光敏鹵化銀乳劑層中。導電金屬網格及導電金屬連接件外部之透明區域通常不含銀金屬粒子。 In order to expose a precursor image by image, a suitable masking element or group of masking elements is designed with a predetermined pattern for both the conductive metal mesh and the conductive metal connector that are ultimately formed in the conductive article. As mentioned above, the photosensitive silver halide emulsion layer in the precursor is typically designed to accommodate both the touch area having the desired conductive metal grid and the conductive metal connector trace pattern to provide the designed circuit. Both the touch area and the electrode connector area are formed, for example, simultaneously in the same photosensitive silver halide emulsion layer on one or both of the support sides of the transparent substrate in a common process step. The conductive metal mesh and the transparent regions outside the conductive metal connectors are typically free of silver metal particles.
因此,一前驅體之一或兩側經設計以曝露於適當輻射以在各光敏鹵化銀乳劑層中提供:(a)一潛在導電銀網格,及(b)一不同於潛在導電銀網格之潛在導電銀連接件。前驅體之各側可同時逐影像地曝光或其等可在不同時間使用不同遮罩元件逐影像地曝光,因此所有區域中之相對潛影之設計、大小、由銀金屬粒子覆蓋之表面面積或薄層電阻率不同。相對光敏鹵化銀乳劑層亦可經設計以具有不同波長敏感性,使得不同成像(曝光)輻射波長可用於相對支撐側之曝光。 Thus, one or both sides of a precursor are designed to be exposed to appropriate radiation to provide in each photosensitive silver halide emulsion layer: (a) a latent conductive silver grid, and (b) a different potential conductive silver grid Potentially conductive silver connectors. Each side of the precursor can be exposed imagewise at the same time or its image can be exposed imagewise at different times using different mask elements, so the relative latent image in all areas is designed, sized, surface area covered by silver metal particles or The sheet resistivity is different. The relatively light sensitive silver halide emulsion layers can also be designed to have different wavelength sensitivities such that different imaging (exposure) radiation wavelengths can be used for exposure on the opposite support side.
因此,光敏鹵化銀乳劑層中之光敏鹵化銀可逐影像地曝露於來自一適當來源之適當之光化輻射(UV至可見輻射),該來源在此項技術中係熟知的,例如氙燈、汞燈或自200nm且最高為且包含700nm之其他輻射源。 Thus, the photosensitive silver halide in the photosensitive silver halide emulsion layer can be imagewise exposed to appropriate actinic radiation (UV to visible radiation) from a suitable source, such sources being well known in the art, such as xenon lamps, mercury. The lamp is either from 200 nm and up to and including 700 nm other sources of radiation.
經曝光之前驅體可使用各種水基處理溶液而處理(包含至少溶液 物理顯影及鹵化銀定影)以在各所曝光之光敏鹵化銀乳劑層中提供:(a)一來自潛在導電銀網格之導電銀網格、(b)一來自潛在導電銀連接件之導電銀連接件,及(c)透明區域,其等在該導電銀網格及該導電銀連接件兩者外部。 The precursor can be treated with various water-based treatment solutions before exposure (including at least a solution) Physical development and silver halide fixing) are provided in each exposed photosensitive silver halide emulsion layer: (a) a conductive silver grid from a potential conductive silver grid, (b) a conductive silver connection from a potential conductive silver connector And (c) a transparent region that is external to both the conductive silver mesh and the conductive silver connector.
形成於觸摸區域中之所得導電銀網格通常具有至少75%之綜合透射比(例如,導電銀網格覆蓋總觸摸區域表面面積之25%或更少)。相比之下,形成於電極連接件區域中之所得導電銀連接件具有68%或更小(或50%或更小)之一綜合透射比。因此,導電銀連接件通常覆蓋32%以上之總電極連接件區域。如上文描述般判定綜合透射比。此等量在透明基板之相對支撐側上可相同或不同。 The resulting conductive silver grid formed in the touch area typically has an overall transmittance of at least 75% (eg, the conductive silver grid covers 25% or less of the total touch area surface area). In contrast, the resulting conductive silver connector formed in the electrode connector region has a combined transmittance of 68% or less (or 50% or less). Therefore, the conductive silver connector typically covers more than 32% of the total electrode connector area. The overall transmittance is determined as described above. These equal amounts may be the same or different on the opposite support sides of the transparent substrate.
前浴溶液亦可用於在顯影之前處理所曝光之銀鹽。此類溶液可包含如上文針對顯影溶液描述且具有相同或不同量之一或多種顯影抑制劑。有效抑制劑包含但不限於苯並三唑、雜環硫醇及巰四唑。前浴溫度可在如針對顯影描述之一範圍中。前浴時間取決於濃度及特定抑制劑,但其可在至少10秒且最高為且包含4分鐘之範圍內。 The pre-bath solution can also be used to treat the exposed silver salt prior to development. Such solutions may comprise one or more development inhibitors as described above for the development solution and having the same or different amounts. Effective inhibitors include, but are not limited to, benzotriazole, heterocyclic thiols, and tetrazolium. The front bath temperature can be in the range as described for development. The anterior bath time depends on the concentration and the particular inhibitor, but it can be in the range of at least 10 seconds and up to and including 4 minutes.
處理潛影中之所曝光鹵化銀通常係首先用一或多個顯影步驟實現,在該步驟期間鹵化銀潛影中之銀離子被還原至銀金屬(或銀粒子)。此等顯影步驟通常係使用已知之通常在形成銀金屬影像之黑白攝影術中使用之含水顯影溶液實行,且通常包含至少一種溶液物理顯影溶液。 The exposure of the exposed silver halide in the latent image is typically achieved first by one or more development steps during which silver ions in the silver halide latent image are reduced to silver metal (or silver particles). Such development steps are typically carried out using an aqueous developing solution known to be commonly used in the formation of silver metal images in black and white photography, and typically comprise at least one solution physical developing solution.
已知可顯影上文描述之所曝光之(含潛影之)鹵化銀以形成銀金屬粒子之多種形成銀金屬影像之黑白顯影溶液(亦被識別為「顯影劑」)。有用之一種商用形成銀金屬影像之黑白鹵化銀顯影劑係Accumax®鹵化銀顯影劑。形成銀金屬影像之黑白顯影溶液通常係包含相同或不同類型之一或多種鹵化銀顯影劑之水溶液,該等顯影劑包含但不限於(1978年12月)研究披露17643號、(1979年11月)研究披露 18716號及(1989年12月)研究披露308119號中描述之顯影劑,諸如多羥基苯(諸如二羥基苯或其如氫醌、鄰苯二酚、焦棓酸、甲基氫醌及氯氫醌之形式)、氨基酚(諸如對甲氨基苯酚、對氨基苯酚及對羥基苯甘氨酸、對苯二胺)、抗壞血酸及其衍生物、還原酮、異抗壞血酸及其衍生物、3-吡唑烷酮(例如1-苯基-4,4-二甲基-3-吡唑酮、1-苯基-3-吡唑烷酮及1-苯基-4-甲基-4-羥甲基-3-吡唑烷酮)、吡唑啉酮、嘧啶、連二亞硫酸鹽及羥胺。此等顯影劑可個別或組合地使用。一或多種顯影劑可以例如至少0.01mol/l且最高為且包含1mol/l之適當量存在。 It is known to develop a plurality of exposed silver halides (including latent images) to form a plurality of silver metal image black and white developing solutions (also identified as "developers") of silver metal particles. Silver metal image of a monochrome useful silver halide developing a commercial system Accumax ® silver halide developing agents. The black and white developing solution forming the silver metal image is usually an aqueous solution containing one or more silver halide developers of the same or different types, including but not limited to (December 1978) Research Disclosure No. 17643, (November 1979) Research Disclosures Developers disclosed in Research Disclosure No. 18716 and (December 1989) Research Disclosure No. 308119, such as polyhydroxybenzene (such as dihydroxybenzene or its like hydroquinone, catechol, pyroic acid, methylhydroquinone) And the form of chlorohydroquinone), aminophenols (such as p-aminophenol, p-aminophenol and p-hydroxyphenylglycine, p-phenylenediamine), ascorbic acid and its derivatives, reducing ketones, isoascorbic acid and its derivatives, 3- Pyrazolone (eg 1-phenyl-4,4-dimethyl-3-pyrazolone, 1-phenyl-3-pyrazolidinone and 1-phenyl-4-methyl-4-hydroxyl) Methyl-3-pyrazolidinone), pyrazolone, pyrimidine, dithionite and hydroxylamine. These developers can be used individually or in combination. The one or more developers may be present, for example, in an amount of at least 0.01 mol/l and up to and including 1 mol/l.
黑白顯影溶液亦可包含輔助銀顯影劑,其等與一顯影劑一起展現出超加性性質。此等輔助顯影劑可包含但不限於諸如至少0.001mol/l且最高為且包含0.1mol/l之適當量之對氨基苯酚及取代或非取代菲尼酮。 The black and white developing solution may also contain an auxiliary silver developer which exhibits superadditive properties together with a developer. Such auxiliary developers may include, but are not limited to, p-aminophenol and substituted or unsubstituted phenidone such as at least 0.001 mol/l and up to and including 0.1 mol/l.
該一或多種輔助銀顯影劑之濃度可小於如上文描述之該一或多種輔助顯影劑之濃度。 The concentration of the one or more auxiliary silver developers may be less than the concentration of the one or more auxiliary developers as described above.
有用之黑白顯影溶液亦可包含已知量之一或多種銀絡合劑(或銀配位體),包含但不限於亞硫酸鹽、硫氰酸鹽、硫代硫酸鹽、硫脲、氨基硫脲、三級膦、硫醚、胺、硫醇、氨基羧酸鹽、三唑硫醇鹽、吡啶(包含二吡啶)、咪唑及氨基膦酸鹽。例如,一或多種鹼金屬亞硫酸鹽可以至少0.1mol/l且最高為且包含1mol/l之一量存在。 Useful black and white developing solutions may also contain one or more silver complexing agents (or silver ligands), including but not limited to sulfites, thiocyanates, thiosulfates, thioureas, thiosemicarbazides. , tertiary phosphines, thioethers, amines, thiols, aminocarboxylates, triazole thiolates, pyridines (including dipyridines), imidazoles and aminophosphonates. For example, one or more alkali metal sulfites may be present in an amount of at least 0.1 mol/l and up to and including 1 mol/l.
為了各種目的,黑白顯影溶液亦可包括適當量之一或多種烷基或芳基取代或非取代巰四唑,該適當量諸如至少0.25mmol/l且最高為且包含2.5mmol/l。有用之巰四唑包含但不限於烷基、芳基及雜環取代巰四唑。此等化合物之實例包含但不限於1-苯基-5-巰四唑(PMT)、1-乙基-5-巰四唑、1-特-丁基-5-巰四唑及1-吡啶基-5-巰四唑。 For various purposes, the black and white developing solution may also include an appropriate amount of one or more alkyl or aryl substituted or unsubstituted perylene tetrazoles, such as at least 0.25 mmol/l and up to and including 2.5 mmol/l. Useful tetrazole includes, but is not limited to, alkyl, aryl and heterocyclic substituted oxatetrazole. Examples of such compounds include, but are not limited to, 1-phenyl-5-indolyltetrazole (PMT), 1-ethyl-5-indolyltetrazole, 1-tert-butyl-5-indolyltetrazole, and 1-pyridine. Base-5-tetrazolium.
此外,黑白顯影溶液亦可包含適當量之一或多種顯影抑制劑。有用之顯影抑制劑包含但不限於取代及非取代苯並三唑化合物,例如 5-甲基苯並三唑、咪唑、苯並咪唑硫酮、苯並噻唑硫酮、苯並惡唑硫酮及噻唑硫酮,其全具有如上文針對巰四唑描述之相同或不同量。 Further, the black-and-white developing solution may also contain an appropriate amount of one or more development inhibitors. Useful development inhibitors include, but are not limited to, substituted and unsubstituted benzotriazole compounds, for example 5-methylbenzotriazole, imidazole, benzimidazole thione, benzothiazole thione, benzoxazole thione, and thiazolidine, all having the same or different amounts as described above for quaternary tetrazole.
可以已知量存在於黑白顯影溶液中之其他附加物包含但不限於金屬螯合劑、防腐劑(諸如亞硫酸鹽)、抗氧化劑、少量之混水有機溶劑(諸如苯甲醇及二甘醇)、成核劑以及酸、堿(諸如鹼金屬類氫氧化物)及緩衝劑(諸如碳酸鹽、硼砂、磷酸鹽及其他鹼式鹽)以建立至少8且通常至少9.5或至少11且最高為且包含14之一pH值。 Other addenda that may be present in known amounts in the black and white developing solution include, but are not limited to, metal chelating agents, preservatives (such as sulfites), antioxidants, small amounts of mixed organic solvents (such as benzyl alcohol and diethylene glycol), Nucleating agents as well as acids, hydrazines (such as alkali metal hydroxides) and buffers (such as carbonates, borax, phosphates, and other basic salts) to establish at least 8 and usually at least 9.5 or at least 11 and up to and including 14 one of the pH values.
鹵化銀顯影溶液可以工作強度或在使用之前或期間用水稀釋高達5倍之濃縮形式供應。 The silver halide developing solution can be supplied at a working strength or in a concentrated form diluted up to 5 times with water before or during use.
若需要,可使用多個顯影步驟。例如,一第一顯影溶液可提供初始顯影以形成銀金屬核且然後可使用一第二顯影溶液以提供改良所得銀金屬影像之導電率之「溶液物理顯影」。 Multiple development steps can be used if desired. For example, a first developing solution can provide initial development to form a silver metal core and then a second developing solution can be used to provide "solution physical development" that improves the conductivity of the resulting silver metal image.
可使用具有至少8且最高為且包含13之一pH之一溶液實行一溶液物理顯影步驟。此鹵化銀溶液物理顯影溶液可包括選自氫醌或其衍生物之一或多者或一或多種抗壞血酸或其衍生物之一或多種主要之顯影劑。鹵化銀溶液物理顯影溶液中之主要顯影劑可與上文描述之鹵化銀顯影溶液中之主要顯影劑相同或不同。 A solution physical development step can be carried out using a solution having at least 8 and up to and containing one of the pHs of one of 13. The silver halide solution physical developing solution may include one or more main developers selected from one or more of hydroquinone or a derivative thereof or one or more ascorbic acids or derivatives thereof. The main developer in the physical development solution of the silver halide solution may be the same as or different from the main developer in the silver halide developing solution described above.
鹵化銀溶液物理顯影溶液中之該一或多種主要顯影劑可以至少0.01mol/l且最高為且包含1mol/l之一總量存在。 The one or more primary developers in the physical development solution of the silver halide solution may be present in a total amount of at least 0.01 mol/l and up to and including 1 mol/l.
此外,鹵化銀溶液物理顯影溶液包括至少0.001mol/l且最高為且包含0.1mol/l或通常至少0.005mol/l且最高為且包含0.05mol/l之一量之作為必要組分之一或多種鹵化銀溶解觸媒。 Further, the silver halide solution physical development solution includes at least 0.001 mol/l and up to and including 0.1 mol/l or usually at least 0.005 mol/l and up to and including 0.05 mol/l as one of the essential components or A variety of silver halide dissolution catalysts.
有用之鹵化銀溶解觸媒包含但不限於鹼金屬硫氰酸鹽(諸如硫氰酸鈉及硫氰酸鉀)、硫醚(諸如3,6-二硫雜-1,8-辛二醇)及雜環硫醇(諸如四氫-4,6-二甲基-1,3,5-三嗪-2(1H)-硫酮及四氫-3-羧乙基-1,3,5-三嗪-2(1H)-硫酮)。此等化合物可容易與銀絡合。 Useful silver halide dissolution catalysts include, but are not limited to, alkali metal thiocyanates (such as sodium thiocyanate and potassium thiocyanate), thioethers (such as 3,6-dithia-1,8-octanediol). And heterocyclic thiols (such as tetrahydro-4,6-dimethyl-1,3,5-triazine-2(1H)-thione and tetrahydro-3-carboxyethyl-1,3,5- Triazine-2(1H)-thione). These compounds can be easily complexed with silver.
在一些實施例中,鹵化銀溶液物理顯影溶液實質上不含催化顯影劑,諸如上文針對鹵化銀顯影溶液描述之該等化合物。術語「實質上沒有」意指小於0.001mol/l或甚至小於0.0001mol/l之此等化合物被特意地併入至或產生於該溶液中。 In some embodiments, the silver halide solution physical development solution is substantially free of catalytic developer, such as those described above for silver halide development solutions. The term "substantially free" means that less than 0.001 mol/l or even less than 0.0001 mol/l of such compounds are intentionally incorporated or produced in the solution.
鹵化銀溶液物理顯影溶液可進一步包括一或多種鹼金屬亞硫酸鹽,包含亞硫酸鈉、亞硫酸鉀及其等混合物。當使用亞硫酸鉀或亞硫酸鈉時或特別當只使用亞硫酸鉀時,鹼金屬亞硫酸鹽可以至少0.2mol/l且最高為且包含3mol/l之一總量存在於鹵化銀溶液物理顯影溶液中。 The silver halide solution physical development solution may further comprise one or more alkali metal sulfites, including sodium sulfite, potassium sulfite, and the like. When potassium sulfite or sodium sulfite is used or particularly when only potassium sulfite is used, the alkali metal sulfite may be present in the physical development solution of the silver halide solution in a total amount of at least 0.2 mol/l and up to and including 3 mol/l. .
鹵化銀溶液物理顯影溶液可進一步包含能夠與銀離子絡合之一或多種多氨基多羧酸鹽,其包含但不限於二乙三胺五乙酸、五鈉鹽及此項技術中已知之其他類似化合物。尤其當不存在一亞硫酸鹽時,此等化合物可能係有用的。此等化合物可以至少0.001mol/l且最高為且包含0.03mol/l之一量存在。 The silver halide solution physical development solution may further comprise one or more polyaminopolycarboxylates capable of complexing with silver ions, including but not limited to diethylenetriaminepentaacetic acid, pentasodium salt, and other similarities known in the art. Compound. Such compounds may be useful especially when monosulfite is not present. These compounds may be present in an amount of at least 0.001 mol/l and up to and including 0.03 mol/l.
鹵化銀溶液物理顯影溶液亦可包含可與銀、鈣、鐵、鎂或可存在之其他金屬離子絡合之一或多種金屬離子絡合劑。至少0.001mol/l之一總量之銀或鈣金屬離子絡合劑可特別有用。 The silver halide solution physical development solution may also comprise one or more metal ion complexing agents which may be complexed with silver, calcium, iron, magnesium or other metal ions which may be present. Silver or calcium metal ion complexing agents in a total amount of at least 0.001 mol/l may be particularly useful.
特別有用之鹵化銀溶液物理顯影溶液包含但不限於氫醌或其衍生物及硫氰酸鈉或硫氰酸鉀及視情況一亞硫酸鹽及鈣或銀金屬離子絡合劑。 Particularly useful silver halide solution physical development solutions include, but are not limited to, hydroquinone or a derivative thereof and sodium thiocyanate or potassium thiocyanate and, optionally, a sulfite and a calcium or silver metal ion complexing agent.
鹵化銀溶液物理顯影溶液可以工作強度或在使用已知處理設備及工序之處理之前或期間適當稀釋之一濃縮形式提供。例如,鹵化銀溶液物理顯影溶液與一所需工作強度濃度相比可被濃縮至少4倍。 The silver halide solution physical development solution can be provided at a working strength or in a concentrated form suitably diluted prior to or during treatment with known processing equipment and procedures. For example, a silver halide solution physical development solution can be concentrated at least 4 times compared to a desired working strength concentration.
有用之顯影溫度之範圍可為至少15℃且最高為且包含60℃。有用之顯影時間之範圍可為至少10秒且最高為且包含10分鐘,但更有可能最高為且包含1分鐘。相同時間或溫度可用於個別顯影步驟,且可 經調適以在所有潛在鹵化銀影像中顯影至少90莫耳百分數之曝光鹵化銀。若不使用一前浴溶液,則可適當地延長顯影時間。顯影步驟期間亦顯影一親水外塗層中之(若干)任何曝光鹵化銀。在任何顯影步驟之後或之間可用水實行洗滌或沖洗。 Useful development temperatures can range from at least 15 °C and up to and including 60 °C. Useful development times can range from at least 10 seconds and up to and including 10 minutes, but are more likely to be up to and including 1 minute. The same time or temperature can be used for individual development steps, and It is adapted to develop at least 90 mole percent of exposed silver halide in all potential silver halide images. If a pre-bath solution is not used, the development time can be appropriately extended. Any exposed silver halide(s) in a hydrophilic overcoat layer is also developed during the development step. Washing or rinsing can be carried out with water after or between any of the developing steps.
在將所曝光之鹵化銀顯影為銀金屬之後,通常藉由用鹵化銀定影溶液處理所顯影之含銀物件來去除所有光敏鹵化銀乳劑層中之未顯影之鹵化銀。鹵化銀定影溶液在黑白攝影領域中係熟知的,且含有使銀離子絡合以自該等層去除銀離子之一或多種化合物。通常在鹵化銀定影溶液中使用硫代硫酸鹽。鹵化銀定影溶液可視情況含有一硬化劑,諸如明礬或鉻礬。所顯影膜可在顯影之後立即以一鹵化銀定影溶液處理,或可存在一介入之停顯液或水洗或沖洗,或停顯液與水沖洗兩者。定影可在任何適當溫度及時間下實行,諸如在至少20℃下實行至少30秒鐘。 After the exposed silver halide is developed into a silver metal, the undeveloped silver halide in all of the light sensitive silver halide emulsion layers is typically removed by treating the developed silver-containing article with a silver halide fixing solution. Silver halide fixing solutions are well known in the art of black and white photography and contain one or more compounds that complex silver ions to remove silver ions from the layers. A thiosulfate is usually used in a silver halide fixing solution. The silver halide fixing solution may optionally contain a hardener such as alum or chrome. The developed film may be treated with a silver halide fixing solution immediately after development, or there may be an interventional stop solution or water wash or rinse, or both stop solution and water rinse. Fixing can be carried out at any suitable temperature and time, such as at least 20 ° C for at least 30 seconds.
定影然後在各之前之光敏鹵化銀乳劑層中之導電銀金屬電極網格及導電銀連接件中留下銀金屬粒子。定影亦去除任何親水外塗層中之任何未顯影鹵化銀。 The fixing then leaves silver metal particles in the conductive silver metal electrode grid and the conductive silver connector in each of the preceding photosensitive silver halide emulsion layers. Fixing also removes any undeveloped silver halide in any hydrophilic outer coating.
在定影之後,可在水中洗滌或沖洗所得中間物件,水可視情況包含表面活性劑或其他材料以減少在乾燥後形成之水漬。 After fixing, the resulting intermediate article can be washed or rinsed in water, which may optionally include a surfactant or other material to reduce water stain formation after drying.
在定影之後,中間物件可經進一步處理以進一步增強透明基板之各支撐側上之銀金屬(或核)之導電率。已提出多種方式來實行此「導電率增強」程序。例如,美國專利7,985,527(Tokunaga)及8,012,676((Yoshiki)等人)描述使用熱水浴、水蒸汽、還原劑或鹵化物進行之導電率增強處理。 After fixing, the intermediate article can be further processed to further enhance the conductivity of the silver metal (or core) on each of the support sides of the transparent substrate. Various ways have been proposed to implement this "conductivity enhancement" procedure. For example, U.S. Patent Nos. 7,985,527 (Tokunaga) and 8,012,676 (by Yoshiki et al.) describe the conductivity enhancement treatment using a hot water bath, water vapor, reducing agent or halide.
亦可藉由與一導電率增強劑之重複接觸、洗滌、乾燥及一或多次重複處理、洗滌及乾燥之此循環來增強銀金屬粒子之導電率。有用之導電率增強劑包含但不限於亞硫酸鹽、硼烷化合物、氫醌、對苯二 胺及亞磷酸鹽。該處理可在至少30℃且最高為且包含90℃之一溫度下實行持續至少15秒且最高為且包含30分鐘。 The conductivity of the silver metal particles can also be enhanced by repeated cycles of contact, washing, drying, and one or more repeated treatments, washings, and drying with a conductivity enhancer. Useful conductivity enhancers include, but are not limited to, sulfites, borane compounds, hydroquinone, p-phenylene Amines and phosphites. The treatment can be carried out for at least 15 seconds and up to and including 30 minutes at a temperature of at least 30 ° C and up to and including 90 ° C.
在一些實施例中,在定影之後且在乾燥之前用一硬化浴處理導電物件可用以改良所得導電物件之物理持久性。此等硬化浴可包含熟習此項技術者將容易明白之適當量之一或多種已知硬化劑。可希望控制一或多個處理階段處導電膜元件前驅體之膨脹,使得膨脹被限於原始前驅體乾燥厚度之一所需量。 In some embodiments, treating the electrically conductive article with a hardening bath after fixing and prior to drying can be used to improve the physical durability of the resulting electrically conductive article. Such hardening baths may comprise one or more of the known hardeners in an appropriate amount which will be readily apparent to those skilled in the art. It may be desirable to control the expansion of the conductive film element precursor at one or more of the processing stages such that the expansion is limited to the desired amount of one of the original precursor dry thicknesses.
若需要亦可在一最終乾燥之前以任何適當時間及溫度實行諸如一穩定處理之額外處理。 Additional processing such as a stabilization process can be performed at any suitable time and temperature, if desired, prior to final drying.
任何階段處之乾燥可在周圍條件中或藉由例如在高於50℃但低於透明基板之玻璃轉變溫度之一溫度下在對流烤箱中加熱而完成。 Drying at any stage can be accomplished in ambient conditions or by heating in a convection oven, for example, at a temperature above 50 ° C but below the glass transition temperature of the transparent substrate.
雖然可在不同時間或以不同次序實行前驅體之各側之逐影像曝光及處理,但在許多實施例中,可在第一支撐側上之光敏鹵化銀乳劑層之逐影像曝光及處理之同時實行透明基板之相對第二支撐側上之光敏鹵化銀乳劑層之逐影像曝光及處理。 While imagewise exposure and processing of the various sides of the precursor can be performed at different times or in a different order, in many embodiments, the imagewise exposure and processing of the photosensitive silver halide emulsion layer on the first support side can be performed simultaneously The image-wise exposure and processing of the photosensitive silver halide emulsion layer on the opposite second support side of the transparent substrate is performed.
處理步驟之結果係如本文中描述之一導電物件。 The result of the processing steps is a conductive article as described herein.
導電金屬網格:Conductive metal grid:
第一支撐側上之導電金屬網格及相對第二支撐側上之選用導電金屬網格在組成、圖案配置、導電線厚度或格線形狀(例如,多邊形圖案,包含但不限於:矩形、三角形、六邊形、菱形、八邊形或正方形之一圖案)、圓形或其他曲線或隨機結構(其等全部均對應於逐影像曝光期間使用之遮罩元件中之預定圖案)方面可為相同或不同的。例如,在一項實施例中,第一支撐側上之導電金屬網格可以一正方形圖案配置,且相對支撐第二側上之導電金屬連接件可以一菱形圖案配置。在各情況中,導電金屬網格中之金屬網格線形成一網狀結構。在其他實施例中,相對支撐側上之各種圖案可被配置成一替代配置,使 得一個支撐側上之導電金屬網格只部分覆蓋相對支撐側上之導電金屬網格,有點像美國專利申請公開案2011/0289771(上文提及)之圖14中所示出。 a conductive metal grid on the first support side and a selected conductive metal grid on the second support side in composition, pattern configuration, conductive line thickness or grid line shape (eg, polygonal pattern, including but not limited to: rectangle, triangle , hexagonal, diamond, octagon or square pattern), circular or other curved or random structure (all of which correspond to a predetermined pattern in the mask element used during image-wise exposure) may be the same Or different. For example, in one embodiment, the conductive metal grids on the first support side may be arranged in a square pattern and the conductive metal connectors on the opposite side of the support side may be arranged in a diamond pattern. In each case, the metal grid lines in the conductive metal grid form a network structure. In other embodiments, the various patterns on the opposite support sides can be configured in an alternate configuration such that The conductive metal grid on one of the support sides only partially covers the conductive metal grid on the opposite support side, as shown in Figure 14 of U.S. Patent Application Publication No. 2011/0289771 (mentioned above).
導電金屬網格中之導電金屬導線(諸如銀或銅導線)可具有通常至少為1cm且最高為且包含10米之任何所需長度,且其等可具有相同或不同之平均乾燥厚度(一個外沿至另一外沿之線寬)及乾燥高度,且平均乾燥厚度及乾燥高度通常小於50μm,但更有可能至少1μm且最高為且包含20μm,或特別地至少5μm特別且小於15μm或甚至小於10μm或更小。 Conductive metal wires (such as silver or copper wires) in a conductive metal grid may have any desired length of typically at least 1 cm and up to and including 10 meters, and the like may have the same or different average dry thickness (one outer The line width to the other outer edge) and the dry height, and the average dry thickness and dry height are generally less than 50 μm, but are more likely to be at least 1 μm and up to and including 20 μm, or in particular at least 5 μm, and particularly less than 15 μm or even less than 10 μm or less.
導電金屬連接件:Conductive metal connectors:
各導電金屬連接件導線圖案包括至少一根且更有可能至少兩根相鄰(例如,至少第一及第二)金屬(諸如銀)主導線,且各導電金屬連接件中可存在多達1000或甚至更多根此等金屬主導線。金屬主導線之數目在透明基板之相對支撐側上可不同。各金屬主導線包括電連接至該至少一根(通常至少兩根相鄰)金屬主導線之一端處之金屬(諸如銀)端導線之兩根或更多根(且多達10或甚至更多根)金屬(諸如銀)微導線。因此,各金屬(諸如銀)主導線中之該兩根或更多根金屬微導線及金屬端導線形成一捆裝型樣。許多捆裝型樣包括複數根金屬主導線,其中之各金屬主導線包括多根金屬微導線且所有金屬微導線在兩端處電連接至適當金屬端導線。如下文描述,此等捆裝型樣亦可包含一或多根金屬(諸如銀)跨接導線。 Each conductive metal connector wire pattern includes at least one and more likely at least two adjacent (eg, at least first and second) metal (such as silver) main conductors, and up to 1000 may be present in each conductive metal connector Or even more of these metal lines. The number of metal main conductors may vary on the opposite support sides of the transparent substrate. Each metal conductor includes two or more metal (eg, silver) end conductors electrically connected to one end of the at least one (typically at least two adjacent) metal conductors (and up to 10 or even more) Root) Metal (such as silver) microwires. Therefore, the two or more metal microwires and the metal end wires of each metal (such as silver) main conductor form a bundle type. Many bundled patterns include a plurality of metal conductor wires, each of which includes a plurality of metal microwires and all of which are electrically connected to the appropriate metal terminal wires at both ends. As described below, such bundled patterns may also include one or more metal (such as silver) jumper wires.
在一些實施例中,各金屬主導線可包括兩根至八根金屬微導線其等與適當金屬端導線一起形成一捆裝型樣。因此,此等實施例中之各捆裝型樣包括與各捆裝型樣中之該兩根至八根金屬微導線電連接之該至少兩根相鄰金屬主導線之各端處(及因此捆裝型樣中之各對相鄰金屬主導線之端處)之導電金屬(例如銀)端導線。 In some embodiments, each metal conductor may comprise two to eight metal microwires, etc., together with the appropriate metal end conductors to form a bundle pattern. Accordingly, each of the bundled patterns in the embodiments includes at each end of the at least two adjacent metal main conductors electrically connected to the two to eight metal microwires of each of the bundled patterns (and thus Conductive metal (eg, silver) end conductors at the ends of adjacent pairs of adjacent metal conductors in the bundled pattern.
任何兩根相鄰金屬主導線之間的平均距離大於各捆裝型樣中之任何兩根相鄰金屬微導線之間的平均距離。例如,任何兩根相鄰金屬主導線之間的平均距離可比各捆裝型樣中之任何兩根相鄰金屬微導線之間的平均距離大至少30%或更通常地大至少100%。例如,兩根相鄰金屬主導線之間的平均距離可為至少5μm或至少10μm或甚至至少20μm。此等「平均距離」係自一給定金屬微導線之外沿量測至一相鄰金屬微導線之最近外沿,或自一給定金屬主導線中之最外金屬微導線之外沿量測至一相鄰金屬主導線中之最接近之最外金屬微導線之外沿。 The average distance between any two adjacent metal conductors is greater than the average distance between any two adjacent metal microwires in each bundle pattern. For example, the average distance between any two adjacent metal conductors can be at least 30% greater or more typically at least 100% greater than the average distance between any two adjacent metal microwires in each bundle pattern. For example, the average distance between two adjacent metal conductors can be at least 5 [mu]m or at least 10 [mu]m or even at least 20 [mu]m. These "average distances" are measured from a given metal microwire to the nearest outer edge of an adjacent metal microwire, or from the outermost metal microwire of a given metal conductor. The outermost edge of the outermost metal microwire of the adjacent metal main conductor is measured.
在各金屬主導線內,各金屬微導線之平均總長可為至少1mm或通常至少5mm且最高為且包含1000mm。 Within each metal conductor, the average total length of each metal microwire may be at least 1 mm or typically at least 5 mm and up to and including 1000 mm.
(各及任何金屬主導線之)各捆裝型樣中之任何兩根相鄰金屬微導線之間的平均距離可為至少2μm且最高為且包含10μm(其中「平均距離」在上文已定義)。特定地說,各捆裝型樣(或各及任何金屬主導線)中之任何兩根相鄰金屬微導線之間的平均距離可為至少5μm且最高為且包含8μm。 The average distance between any two adjacent metal microwires in each of the bundled patterns (each and any metal conductor) may be at least 2 μm and up to and including 10 μm (where "average distance" is defined above ). In particular, the average distance between any two adjacent metal microwires of each bundled pattern (or each and any metal conductor) may be at least 5 [mu]m and up to and including 8 [mu]m.
各金屬微導線之平均寬度(外沿至相對外沿)與各捆裝型樣(或各及任何金屬主導線)中之兩根相鄰金屬微導線之間的平均距離之比可為至少0.5:1但小於2:1或通常至少1:1且最高為且包含2:1。 The ratio of the average width (outer edge to opposite outer edge) of each metal microwire to the average distance between two adjacent metal microwires of each bundle pattern (or each and any metal conductor line) may be at least 0.5 :1 but less than 2:1 or usually at least 1:1 and highest and contains 2:1.
亦希望對於各金屬微導線,最大高度與最小高度之比可為至少1.05:1或通常至少1.1:1。 It is also desirable for each metal microwire to have a ratio of maximum height to minimum height of at least 1.05:1 or typically at least 1.1:1.
在銀微導線中之至少一者(及在大部分實施例中,各金屬微導線)之一些實施例中,金屬微導線之最大高度可等於金屬微導線之中心高度(相差小於10%),其中「中心」被判定為在金屬微導線之兩個外沿之間基本上等距。「基本上等距」意指距兩個外沿之距離相差不超過10%。 In some embodiments of at least one of the silver microwires (and in most embodiments, each of the metal microwires), the maximum height of the metal microwires can be equal to the center height of the metal microwires (with a difference of less than 10%). The "center" is determined to be substantially equidistant between the two outer edges of the metal microwire. "Substantially equidistant" means that the distance from the two outer edges does not differ by more than 10%.
在銀微導線中之至少一者(及在大部分實施例中,各金屬微導線)之其他實施例中,最大高度可更接近一微導線外沿而並非微導線中心高度(與相距中心相比至少51%更接近外沿)。例如,最大高度可實際上位於一些金屬微導線之一或兩個外沿處。 In other embodiments of at least one of the silver microwires (and in most embodiments, each metal microwire), the maximum height may be closer to the outer edge of the microwire than to the center height of the microwire (with the center of the phase) More close to the outer edge than at least 51%). For example, the maximum height may actually be at one or both of the outer edges of some of the metal microwires.
亦可能的是,對於各金屬微導線,最大高度與平均高度之比可為至少1.01:1或更通常至少1.01:1且包含1.05:1。 It is also possible that for each metal microwire, the ratio of the maximum height to the average height may be at least 1.01:1 or more typically at least 1.01:1 and comprise 1.05:1.
各捆裝型樣中之各金屬微導線之平均寬度(自一個外沿至另一外沿)可為至少2μm且最高為且包含20μm或通常最高為且包含15μm,或通常自2μm且最高為且包含12μm。 The average width (from one outer edge to the other outer edge) of each of the metal microwires in each of the bundled patterns may be at least 2 μm and up to and including 20 μm or typically up to and including 15 μm, or typically from 2 μm and up to And contains 12μm.
此外,各捆裝型樣可包括相鄰金屬微導線之間的不在相鄰金屬微導線之端處之至少一根金屬(諸如銀)跨接導線。通常,相鄰金屬微導線包括不在相鄰金屬微導線之端處之多根金屬跨接導線。技術工人可設計各捆裝型樣以具有與一給定導電金屬連接件可能所需一樣多之金屬跨接導線。 Additionally, each bundle pattern can include at least one metal (such as silver) jumper wire between adjacent metal microwires that is not at the end of the adjacent metal microwire. Typically, adjacent metal microwires include a plurality of metal jumper wires that are not at the ends of adjacent metal microwires. A skilled worker can design each bundle to have as many metal jumper wires as may be required for a given conductive metal connector.
金屬跨接導線可以任何適當頻率或方向配置進行配置,且此配置對於各組相鄰金屬微導線可相同或不同。 The metal jumper wires can be configured in any suitable frequency or orientation configuration, and this configuration can be the same or different for each set of adjacent metal microwires.
例如,各捆裝型樣可包括相鄰金屬微導線之間的多根(兩根或更多根)金屬跨接導線,其中多根金屬跨接導線被配置成彼此相距至少100μm之一距離。 For example, each bundle pattern can include a plurality of (two or more) metal jumper wires between adjacent metal microwires, wherein the plurality of metal jumper wires are configured to be at a distance of at least 100 [mu]m from each other.
此外,各捆裝型樣中之一組相鄰金屬微導線中之多根(兩根或更多根)金屬跨接導線可偏離另一組相鄰金屬微導線中之多根金屬跨接導線(例如,沿相鄰組之相鄰金屬微導線交替)。所有金屬跨接導線可因此以相同或不同方式配置在所有相鄰組之相鄰金屬微導線之間。 In addition, a plurality of (two or more) metal jumper wires of one of the adjacent sets of metal microwires in each of the bundled patterns may be offset from the plurality of metal jumper wires of the other set of adjacent metal microwires (For example, alternating adjacent metal microwires along adjacent groups). All metal jumper wires can thus be arranged in the same or different manner between adjacent metal microwires of all adjacent groups.
在一些實施例中,多根金屬跨接導線之各者實質上垂直於相鄰金屬微導線(以實質上90°之一角度相交)。在其他實施例中,多根金屬跨接導線之各者與相鄰金屬微導線以大於或小於90°之一角度相交。 該兩根或更多根金屬微導線可實質上平行(例如,相鄰金屬微導線實質上平行)。 In some embodiments, each of the plurality of metal jumper wires is substantially perpendicular to the adjacent metal microwires (intersecting at an angle of substantially 90°). In other embodiments, each of the plurality of metal jumper wires intersects an adjacent metal microwire at an angle greater than or less than 90°. The two or more metal microwires can be substantially parallel (eg, adjacent metal microwires are substantially parallel).
亦可參考圖1至圖12例證本發明,現在解釋圖1至圖12。 The invention may also be exemplified with reference to Figs. 1 through 12, and Figs. 1 through 12 will now be explained.
首先考慮圖12,其提供本發明之一實施例之一般示意圖。因此,圖12示出了導電物件5,其包含導電金屬網格6及電連接至導電金屬網格6之導電金屬連接件8。各導電金屬連接件8包含形成一捆裝型樣之一或多根金屬主導線10。各金屬主導線10包含一或多根金屬微導線20。金屬端導線22電連接至各金屬主導線10中之金屬微導線20。金屬跨接導線24可電連接金屬主導線10內之金屬微導線20。 Considering first Figure 12, a general schematic diagram of one embodiment of the present invention is provided. Thus, FIG. 12 shows a conductive article 5 comprising a conductive metal grid 6 and a conductive metal connection 8 electrically connected to the conductive metal grid 6. Each of the conductive metal connectors 8 includes one or a plurality of metal conductor wires 10 forming a bundle pattern. Each metal conductor line 10 includes one or more metal micro-wires 20. The metal end wires 22 are electrically connected to the metal micro wires 20 in each of the metal main wires 10. Metal jumper wires 24 can be electrically connected to metal microwires 20 within metal master wires 10.
在圖1中,導電物件5具有其上安置導電金屬連接件8之透明基板40,該導電金屬連接件8包括多根金屬主導線10。各金屬主導線10包括多根相鄰金屬微導線20(圖1中針對各金屬主導線10示出了四根金屬微導線20)。金屬端導線22被示出在各金屬主導線10之端處。導電金屬連接件8之外部係透明區域50(在一些但非全部位置有標號)。透明區域(未以額外標號示出)亦存在於相鄰金屬主導線10之間(或外部)及各金屬主導線10中之相鄰金屬微導線20之間(或外部)。所有透明區域不含明顯之金屬材料。在導電物件5中,相鄰金屬主導線(至少一個被識別為10)分開距離S1且相鄰金屬微導線(一個被識別為20)之間的距離由S2示出。如上文描述,平均值S1大於各捆裝型樣中之平均值S2(金屬主導線10)。代表性之平均金屬微導線20之寬度被示為W且平均金屬微導線長度被示為L。各金屬微導線20可具有基本上相同或不同之L及W尺寸。在大部分實施例中,此等尺寸對於一給定金屬主導線中之各金屬微導線而言係相同的。 In FIG. 1, the conductive article 5 has a transparent substrate 40 on which a conductive metal connector 8 is disposed, the conductive metal connector 8 comprising a plurality of metal wires 10. Each metal conductor line 10 includes a plurality of adjacent metal micro-wires 20 (four metal micro-wires 20 are shown in FIG. 1 for each metal conductor line 10). Metal end wires 22 are shown at the ends of the respective metal main conductors 10. The outer portion of the conductive metal connector 8 is a transparent region 50 (referenced in some but not all locations). Transparent regions (not shown in additional numbers) are also present between (or outside) adjacent metal main conductors 10 and between adjacent metal microwires 20 in each metal main conductor 10. All transparent areas do not contain significant metallic materials. In the conductive article 5, the distance between adjacent metal main conductors (at least one identified as 10) separated by a distance S1 and the adjacent metal microwires (one identified as 20) is shown by S2. As described above, the average value S1 is larger than the average value S2 (metal main line 10) in each bundle pattern. The width of the representative average metal microwire 20 is shown as W and the average metal microwire length is shown as L. Each of the metal microwires 20 can have substantially the same or different L and W dimensions. In most embodiments, these dimensions are the same for each of the metal microwires in a given metal conductor.
圖2示出了導電物件5之一示意橫截面,導電物件5包括具有第一支撐側42及相對第二支撐側44之透明基板40。一代表性之金屬微導線20被示出位於第一支撐側42及相對第二支撐側44兩者上。 2 shows a schematic cross section of one of the electrically conductive articles 5 comprising a transparent substrate 40 having a first support side 42 and a second support side 44. A representative metal microwire 20 is shown on both the first support side 42 and the opposite second support side 44.
在圖3A中示出之橫截面視圖中,光敏鹵化銀乳劑層15之一部分被安置在具有第一支撐側42及相對第二支撐側44之透明基板40之一支撐側(第一支撐側或相對第二支撐側)上。光敏鹵化銀乳劑層15之此部分含有由親水黏合劑64包圍之多個未曝光及未顯影之鹵化銀顆粒60。 In the cross-sectional view shown in FIG. 3A, one portion of the photosensitive silver halide emulsion layer 15 is disposed on one of the support sides (the first support side or the transparent substrate 40 having the first support side 42 and the opposite second support side 44) Relative to the second support side). This portion of the photosensitive silver halide emulsion layer 15 contains a plurality of unexposed and undeveloped silver halide grains 60 surrounded by a hydrophilic binder 64.
圖3B示出了類似於圖3A之一視圖,但銀(金屬)微導線20被安置在具有第一支撐側42及相對第二支撐側44之透明基板40上,該銀(金屬)微導線20含有可源自於在圖3A中圖解說明之光敏鹵化銀乳劑層15之該部分中示出之由親水黏合劑64包圍之多個鹵化銀顆粒60之曝光及鹵化銀顯影之多個銀金屬粒子62。 3B shows a view similar to FIG. 3A, but the silver (metal) microwire 20 is disposed on a transparent substrate 40 having a first support side 42 and a second support side 44, the silver (metal) microwire 20 comprising a plurality of silver metal developed from a plurality of silver halide grains 60 surrounded by a hydrophilic binder 64, which may be derived from the portion of the photosensitive silver halide emulsion layer 15 illustrated in FIG. 3A, and silver halide developed Particle 62.
圖4類似於圖1且示出了導電物件5,導電物件5包括其上安置了導電金屬連接件8之透明基板40。導電金屬連接件8包括多根金屬主導線10。示出了金屬銀主導線10,但導電金屬連接件8可具有少至兩根金屬主導線。此外,雖然針對各金屬主導線10只示出了四根金屬微導線20,但各金屬主導線中之金屬微導線之數目可少至2且最多為且包含10。金屬端導線22被示出在各組相鄰金屬微導線20之端處,且各種金屬跨接導線24(僅一些有標號)被示出為沿金屬微導線20具有相同間隔。導電金屬連接件8之外部係透明區域50(僅在一些位置有標號),但透明區域(無標號)亦可存在於相鄰金屬微導線之間及相鄰金屬主導線之間。 4 is similar to FIG. 1 and shows a conductive article 5 comprising a transparent substrate 40 on which a conductive metal connector 8 is disposed. The conductive metal connector 8 includes a plurality of metal conductor wires 10. The metallic silver main conductor 10 is shown, but the conductive metal connector 8 can have as few as two metal main conductors. Moreover, although only four metal microwires 20 are shown for each metal conductor line 10, the number of metal microwires in each metal conductor line can be as few as two and up to and including 10. Metal end wires 22 are shown at the ends of each set of adjacent metal microwires 20, and various metal jumper wires 24 (only some of which are numbered) are shown with the same spacing along metal microwires 20. The outer portion of the conductive metal connector 8 is a transparent region 50 (labeled only at some locations), but a transparent region (no label) may also be present between adjacent metal microwires and between adjacent metal conductors.
圖5類似於圖4,但金屬跨接導線24被配置在沿金屬微導線20之不同間隔處且在多對相鄰金屬微導線20之間偏離。因此,各捆裝型樣或金屬主導線10包括一組相鄰金屬微導線20中之多根金屬跨接導線24,其等偏離於一相鄰組之相鄰金屬微導線20中之多根金屬跨接導線24。 5 is similar to FIG. 4, but the metal jumper wires 24 are disposed at different intervals along the metal microwires 20 and are offset between pairs of adjacent metal microwires 20. Thus, each bundled pattern or metal conductor 10 includes a plurality of metal jumper wires 24 of a plurality of adjacent metal microwires 20 that are offset from a plurality of adjacent metal microwires 20 of an adjacent group. The metal bridges the wires 24.
圖6示出了本發明之方法之一些實施例之代表性部分,其中在特徵100中使用光敏鹵化銀技術提供一導電膜元件前驅體(「前驅 體」)、在特徵105中將前驅體逐影像曝露於適當輻射,且在特徵110中在前驅體中處理所得潛在銀[包含使用適當之形成銀金屬影像之黑白顯影溶液進行之顯影]。 Figure 6 shows a representative portion of some embodiments of the method of the present invention in which a photosensitive film element precursor is provided in the feature 100 using a photosensitive silver halide technique ("Precursor The precursor is imagewise exposed to appropriate radiation in feature 105, and the resulting potential silver is processed in the precursor 110 in feature 110 [including development using a suitable black and white developing solution that forms a silver metal image].
圖7示出了使用光敏鹵化銀技術之其他實施例之代表性部分,其中在特徵105中按兩個個別特徵(特徵107中之雙重導電膜元件前驅體之一第一側之逐影像曝光及特徵109中之雙重導電膜元件前驅體之第二(或相對)側之連續逐影像曝光)逐影像曝光所提供之雙重導電膜元件前驅體(「前驅體」),後續接著在特徵110中處理(包含顯影)前驅體之兩個經逐影像曝光側中之所得潛在銀。 Figure 7 illustrates a representative portion of another embodiment using a photosensitive silver halide technique in which two individual features are featured in feature 105 (image-wise exposure of the first side of one of the dual conductive film element precursors in feature 107) A dual-conducting film element precursor ("precursor") provided by imagewise exposure of the second (or opposite) side of the dual conductive film element precursor in feature 109 is subsequently imaged in feature 110. The resulting potential silver in the two imagewise exposed sides of the precursor (including development).
圖8示出了又另一變動之代表性部分,其中針對一雙重導電膜元件前驅體(「前驅體」)之第一及第二側同時實行逐影像曝光特徵105(如特徵107及109中示出),且然後接著在特徵110中處理(包含顯影)經逐影像曝光前驅體之兩側上之潛在銀。 Figure 8 illustrates a representative portion of yet another variation in which image-wise exposure features 105 are simultaneously applied to the first and second sides of a dual conductive film element precursor ("precursor") (e.g., features 107 and 109) Shown), and then processed (including development) in feature 110 to expose the potential silver on both sides of the precursor by imagewise.
圖9中示出了本發明之方法之又其他代表性部分,其中在107中提供一雙重導電膜元件前驅體(「前驅體」)之一第一側之逐影像曝光,該經逐影像曝光之第一側然後在特徵112中經處理(例如,顯影)以自潛在銀提供銀金屬粒子。雙重導電膜元件前驅體之第二(或相對)側亦在109中經逐影像曝光,後續接著在特徵114中將前驅體中之潛在銀處理(包含顯影)為銀金屬粒子。若需要,可同時實行兩側上之逐影像曝光及處理。 Further representative portions of the method of the present invention are shown in FIG. 9, wherein imagewise exposure of a first side of a dual conductive film element precursor ("precursor") is provided at 107. The first side is then processed (e.g., developed) in feature 112 to provide silver metal particles from the latent silver. The second (or opposite) side of the dual conductive film element precursor is also imagewise exposed in 109, followed by subsequent processing (including development) of the potential silver in the precursor into silver metal particles in feature 114. If necessary, image-by-image exposure and processing on both sides can be performed simultaneously.
圖10係具有一圓形上表面及外表面且被安置在具有第一支撐側42及相對第二支撐側44之透明基板40上之一典型金屬微導線20之一示意橫截面圖。金屬(諸如銀)微導線20因此係由被親水黏合劑64包圍之多個銀金屬核(粒子)62構成,該等銀金屬核(粒子)62係例如使用上文描述之化學組合物、適當之曝光及處理化學物質源自於適當之鹵化銀顆粒。如圖10中示出,金屬(諸如銀)微導線20具有平均寬度W、金屬 (諸如銀)微導線最大高度D1及金屬(諸如銀)微導線最小高度D2,其中金屬(諸如銀)微導線最大高度D1大於金屬(諸如銀)微導線最小高度D2,例如至少1.05:1之比。雖然圖10圖解說明了具有均勻尺寸及外形之一金屬(諸如銀)微導線,但一般技術者將瞭解,所繪示圖解說明僅係代表性的且本發明之實踐中產生之實際金屬微導線可具有更不規則之外表面及形狀。 10 is a schematic cross-sectional view of one of the typical metal microwires 20 having a circular upper surface and outer surface and disposed on a transparent substrate 40 having a first support side 42 and a second opposite support side 44. The metal (such as silver) microwire 20 is thus composed of a plurality of silver metal cores (particles) 62 surrounded by a hydrophilic binder 64, such as the chemical composition described above, suitably The exposure and processing chemicals are derived from suitable silver halide grains. As shown in FIG. 10, the metal (such as silver) microwire 20 has an average width W, metal (such as silver) microwire maximum height D1 and metal (such as silver) microwire minimum height D2, wherein metal (such as silver) microwire maximum height D1 is greater than metal (such as silver) microwire minimum height D2, such as at least 1.05:1 ratio. Although FIG. 10 illustrates a metal (such as silver) microwire having a uniform size and shape, those of ordinary skill in the art will appreciate that the illustrated illustration is merely representative and actual metal microwires produced in the practice of the present invention. It can have a more irregular outer surface and shape.
圖11係示出了含有被包圍在親水黏合劑64中之多個銀金屬粒子62之金屬(諸如銀)微導線20之一不同形狀之另一示意橫截面圖,該銀微導線20被安置在具有第一支撐側42及相對第二支撐側44之透明基板40上。金屬(諸如銀)微導線最小高度D2處於或接近金屬(諸如銀)微導線20之中心,且金屬(諸如銀)微導線最小高度D2小於接近或位於金屬(諸如銀)微導線20之任一或兩個外沿之金屬(例如銀)微導線最大高度D1。熟習此項技術者將瞭解,金屬(諸如銀)微導線20之此圖解說明僅係代表性的,且本發明之實踐中產生之實際金屬微導線可展現出與所示出之高度相比有相當大改變之最大及最小高度,且可因此具有更不規則之外表面。 Figure 11 is another schematic cross-sectional view showing a different shape of a metal (such as silver) microwire 20 containing a plurality of silver metal particles 62 enclosed in a hydrophilic binder 64, the silver microwire 20 being placed On the transparent substrate 40 having the first support side 42 and the opposite second support side 44. The metal (such as silver) microwire minimum height D2 is at or near the center of the metal (such as silver) microwire 20, and the metal (such as silver) microwire minimum height D2 is less than either close to or located in the metal (such as silver) microwire 20 Or the metal (for example, silver) microwires of the two outer edges have a maximum height D1. Those skilled in the art will appreciate that the illustration of metal (such as silver) microwires 20 is merely representative and that the actual metal microwires produced in the practice of the present invention can exhibit a higher than the height shown. The maximum and minimum heights are quite large and can therefore have a more irregular outer surface.
本發明提供了至少以下實施例及其等組合,但如熟習此項技術者自本揭示內容之教示將明白,其他特徵組合被視為在本發明範圍內: The present invention provides at least the following embodiments and combinations thereof, but as will be apparent to those skilled in the art from this disclosure, other combinations of features are considered to be within the scope of the invention:
1.一種用於提供一導電物件之方法,該方法包括:提供具有一第一支撐側及一相對第二支撐側之一透明基板;以及在該透明基板之該第一支撐側上提供:(a)一導電金屬網格,(b)一導電金屬連接件,其電連接至該導電金屬網格,及視情況, (c)透明區域,其等在該導電金屬網格及該導電金屬連接件兩者外部,其中:(i)該導電金屬連接件包括至少一根金屬主導線,該至少一根金屬主導線包括電連接至該至少一根金屬主導線之一端處之一金屬端導線之兩根或更多根金屬微導線,該至少一根金屬主導線中之該兩根或更多根金屬微導線及該金屬端導線形成一捆裝型樣;(ii)各金屬微導線之平均長度係至少1mm;且(iii)該導電金屬連接件具有小於68%之一綜合透射比。 A method for providing a conductive member, the method comprising: providing a transparent substrate having a first support side and a second support side; and providing on the first support side of the transparent substrate: a) a conductive metal grid, (b) a conductive metal connector electrically connected to the conductive metal grid, and optionally, (c) a transparent region, which is external to both the electrically conductive metal mesh and the electrically conductive metal connector, wherein: (i) the electrically conductive metal connector comprises at least one metal main conductor, the at least one metal main conductor comprising Two or more metal microwires electrically connected to one of the metal end wires at one end of the at least one metal main conductor, the two or more metal microwires of the at least one metal main conductor and the The metal end wires form a bundled pattern; (ii) each metal microwire has an average length of at least 1 mm; and (iii) the conductive metal connector has a combined transmittance of less than 68%.
2.如實施例1之方法,其中:(iv)對於各金屬微導線,最大高度與最小高度之比係至少1.05:1。 2. The method of embodiment 1, wherein: (iv) for each metal microwire, the ratio of the maximum height to the minimum height is at least 1.05:1.
3.如實施例1或2之方法,其中:(v)各捆裝型樣中各金屬微導線之平均寬度與兩根相鄰金屬微導線之間的平均距離之比係至少0.5:1但小於2:1。 3. The method of embodiment 1 or 2 wherein: (v) the ratio of the average width of each of the metal microwires in each of the bundled patterns to the average distance between the two adjacent metal microwires is at least 0.5:1 but Less than 2:1.
4.如實施例1至3中任一項之方法,其中該導電金屬連接件包括至少兩根相鄰金屬主導線,且該至少兩根相鄰金屬主導線之間的平均距離大於各捆裝型樣中之任何兩根相鄰金屬微導線之間的平均距離。 The method of any one of embodiments 1 to 3, wherein the conductive metal connector comprises at least two adjacent metal main conductors, and an average distance between the at least two adjacent metal main conductors is greater than each bundle The average distance between any two adjacent metal microwires in the pattern.
5.如實施例4之方法,其中各捆裝型樣中之任何兩根相鄰金屬微導線之間的平均距離係至少2μm且最高為且包含10μm。 5. The method of embodiment 4 wherein the average distance between any two adjacent metal microwires in each of the bundled patterns is at least 2 [mu]m and up to and including 10 [mu]m.
6.如實施例1至5中任一項之方法,其進一步包括:在該透明基板之該相對第二支撐側上提供:(a)一相對導電金屬網格,(b)一相對導電金屬連接件,其電連接至該相對導電金屬網格,及視情況,(c)透明區域,其等在該相對導電金屬網格及該相對導電金屬 連接件兩者外部,其中:(i)該相對導電金屬連接件包括至少一根金屬主導線,該至少一根金屬主導線包括電連接至該至少一根金屬主導線之一端處之一金屬端導線之兩根或更多根金屬微導線,該至少一根金屬主導線中之該兩根或更多根金屬微導線及該金屬端導線形成一捆裝型樣;(ii)各金屬微導線之平均長度係至少1mm;且(iii)該相對導電金屬連接件具有小於68%之一綜合透射比。 The method of any of embodiments 1 to 5, further comprising: providing on the opposite second support side of the transparent substrate: (a) a relatively conductive metal mesh, (b) a relatively conductive metal a connector electrically connected to the relatively conductive metal mesh and, as the case may be, (c) a transparent region, the equal conductive metal mesh and the opposite conductive metal An outer portion of the connector, wherein: (i) the relatively conductive metal connector comprises at least one metal bus, the at least one metal bus including one of the metal ends electrically connected to one of the ends of the at least one metal conductor Two or more metal microwires of the wire, the two or more metal microwires of the at least one metal conductor wire and the metal end wire forming a bundle pattern; (ii) each metal microwire The average length is at least 1 mm; and (iii) the relatively conductive metal connector has an overall transmittance of less than 68%.
7.如實施例6之方法,其中在該相對導電金屬連接件中:(iv)對於各金屬微導線,最大高度與最小高度之該比係至少1.05:1。 7. The method of embodiment 6, wherein in the relatively conductive metal connector: (iv) for each metal microwire, the ratio of the maximum height to the minimum height is at least 1.05:1.
8.如實施例6或7之方法,其中在該相對導電金屬連接件中:(v)各捆裝型樣中各金屬微導線之平均寬度與兩根相鄰金屬微導線之間的平均距離之比係至少0.5:1但小於2:1。 8. The method of embodiment 6 or 7, wherein in the relatively conductive metal connector: (v) an average width of each of the metal microwires in each of the bundled patterns and an average distance between two adjacent metal microwires The ratio is at least 0.5:1 but less than 2:1.
9.如實施例6至8中任一項之方法,其中該相對導電金屬連接件包括至少兩根相鄰金屬主導線,且該至少兩根相鄰金屬主導線之間的平均距離大於各捆裝型樣中之任何兩根相鄰金屬微導線之間的平均距離。 The method of any one of embodiments 6 to 8, wherein the relatively conductive metal connector comprises at least two adjacent metal wires, and an average distance between the at least two adjacent metal wires is greater than each bundle The average distance between any two adjacent metal microwires in the package.
10. 如實施例9之方法,其中該相對導電金屬連接件中之各捆裝型樣中之任何兩根相鄰金屬微導線之間的平均距離係至少2μm且最高為且包含10μm。 10. The method of embodiment 9, wherein the average distance between any two adjacent metal microwires in each of the bundles of the relatively conductive metal connectors is at least 2 [mu]m and is at most and comprises 10 [mu]m.
11. 如實施例6至10中任一項之方法,其包括在該第一支撐側上同時形成該導電金屬連接件及導電金屬網格,且同時形成該相對導電金屬連接件及該相對導電金屬網格。 11. The method of any one of embodiments 6 to 10, comprising simultaneously forming the conductive metal connector and the conductive metal grid on the first support side, and simultaneously forming the opposite conductive metal connector and the opposite conductive Metal grid.
12. 如實施例1至11中任一項之方法,其中對於各金屬微導線,最大高度與最小高度之比係至少1.1:1。 12. The method of any of embodiments 1 to 11, wherein for each metal microwire, the ratio of the maximum height to the minimum height is at least 1.1:1.
13. 如實施例1至12中任一項之方法,其中至少一根金屬微導線具有與其中心高度相同之一最大高度。 The method of any one of embodiments 1 to 12, wherein the at least one metal microwire has a maximum height that is the same as its center height.
14. 如實施例1至12中任一項之方法,其中至少一根金屬微導線之一最大高度更接近其外沿而非其中心高度。 14. The method of any of embodiments 1 to 12, wherein one of the at least one metal microwire has a maximum height that is closer to its outer edge than its center height.
15. 如實施例1至14中任一項之方法,其中各金屬微導線具有至少1.05:1之最大高度與平均高度之比。 The method of any of embodiments 1 to 14, wherein each metal microwire has a ratio of a maximum height to an average height of at least 1.05:1.
16. 如實施例1至15中任一項之方法,其中各金屬微導線之平均寬度係至少5μm且最高為且包含20μm。 16. The method of any of embodiments 1 to 15, wherein each metal microwire has an average width of at least 5 μm and a maximum of and including 20 μm.
17. 如實施例1至16中任一項之方法,其中各捆裝型樣包括相鄰金屬微導線之間的並非處於該等相鄰金屬微導線之該端處之至少一根金屬跨接導線。 17. The method of any of embodiments 1 to 16, wherein each bundle pattern comprises at least one metal bridge between adjacent metal microwires that is not at the end of the adjacent metal microwires wire.
18. 如實施例1至17中任一項之方法,其中各捆裝型樣包括相鄰金屬微導線之間的多根金屬跨接導線,其中該等多根金屬跨接導線被配置成彼此相距至少100μm之一距離。 The method of any of embodiments 1 to 17, wherein each of the bundled patterns comprises a plurality of metal jumper wires between adjacent metal microwires, wherein the plurality of metal jumper wires are configured to each other One distance apart by at least 100 μm.
19. 如實施例1至18中任一項之方法,其中各捆裝型樣包括在一組相鄰金屬微導線中之多根金屬跨接導線,該多根金屬跨接導線偏離相鄰金屬微導線之相鄰組中之多根金屬跨接導線。 19. The method of any of embodiments 1 to 18, wherein each bundle pattern comprises a plurality of metal jumper wires in a set of adjacent metal microwires, the plurality of metal jumper wires being offset from adjacent metal A plurality of metal jumper wires in adjacent groups of microwires.
20. 如實施例19之方法,其中該多根金屬跨接導線之各者實質上不垂直於該等相鄰金屬微導線。 20. The method of embodiment 19, wherein each of the plurality of metal jumper wires is substantially non-perpendicular to the adjacent metal microwires.
21. 如實施例1至20中任一項之方法,其中任何兩根相鄰金屬主導線之間的平均距離比各捆裝型樣中之任何兩根相鄰金屬微導線之間的平均距離大至少30%。 21. The method of any one of embodiments 1 to 20, wherein the average distance between any two adjacent metal main conductors is greater than the average distance between any two adjacent metal microwires in each of the bundled patterns At least 30% larger.
22. 如實施例1至21中任一項之方法,其中各捆裝型樣中各金屬微導線之該平均寬度與兩根相鄰金屬微導線之間的該平均距離之比係至少1:1且最高為且包含2:1。 The method of any one of embodiments 1 to 21, wherein the ratio of the average width of each of the metal microwires in each of the bundled patterns to the average distance between two adjacent metal microwires is at least 1: 1 and the highest is and contains 2:1.
23. 如實施例1至22中任一項之方法,其中該導電金屬連接件具 有小於50%之一綜合透射比且該導電金屬網格具有至少90%之一綜合透射比。 The method of any one of embodiments 1 to 22, wherein the conductive metal connector has There is an integrated transmittance of less than 50% and the conductive metal grid has an integrated transmittance of at least 90%.
24. 如實施例6之方法,其中該相對導電金屬連接件具有小於50%之一綜合透射比且該相對導電金屬網格具有至少90%之一綜合透射比。 24. The method of embodiment 6, wherein the relatively conductive metal connector has a combined transmittance of less than 50% and the relatively conductive metal mesh has an integrated transmittance of at least 90%.
25. 如實施例1至24中任一項之方法,其中該透明基板係一連續聚合膜。 The method of any of embodiments 1 to 24, wherein the transparent substrate is a continuous polymeric film.
26. 本發明亦提供一種源自於實施例1至25中任一項之方法之一導電物件,該導電物件包括一透明基板,該透明基板具有一第一支撐側及一相對第二支撐側,且該導電物件在該第一支撐側上包括:(a)一導電金屬網格,(b)一導電金屬連接件,其電連接至該導電金屬網格,及視情況,(c)透明區域,其等在該導電金屬網格及該導電金屬連接件兩者外部,其中:(i)該導電金屬連接件包括至少一根金屬主導線,該至少一根金屬主導線包括電連接至該至少一根金屬主導線之一端處之金屬端導線之兩根或更多根金屬微導線,該至少一根金屬主導線中之該兩根或更多根金屬微導線及該金屬端導線形成一捆裝型樣;(ii)各金屬微導線之平均長度係至少1mm;且(iii)該導電金屬連接件具有小於68%之一綜合透射比。 The present invention also provides a conductive article of the method of any one of embodiments 1 to 25, the conductive article comprising a transparent substrate having a first support side and a second support side And the conductive object comprises on the first support side: (a) a conductive metal mesh, (b) a conductive metal connector electrically connected to the conductive metal mesh, and optionally, (c) transparent a region, which is external to both the conductive metal mesh and the conductive metal connector, wherein: (i) the conductive metal connector includes at least one metal bus, the at least one metal bus including the electrical connection to the Two or more metal microwires of the metal end conductor at one end of the at least one metal main conductor, the two or more metal microwires of the at least one metal main conductor and the metal end conductor forming a The bundled pattern; (ii) each metal microwire has an average length of at least 1 mm; and (iii) the conductive metal connector has a combined transmittance of less than 68%.
其他實施例包含觸控式螢幕裝置,其等各自包括實施例26之一導電物件,或更具體言之: Other embodiments include touch screen devices, each of which includes a conductive article of embodiment 26, or more specifically:
1.一種觸控式螢幕模組,其包括:一導電物件,該導電物件包括具有一第一支撐側及一相對第二 支撐側之一透明基板;且該導電物件在該第一支撐側上包括:(a)一導電金屬網格,(b)一導電金屬連接件,其電連接至該導電金屬網格,及視情況,(c)透明區域,其等在該導電金屬網格及該導電金屬連接件兩者外部,(d)兩個或更多個單獨之導體,其等電連接至該導電金屬連接件中之金屬主導線,及(e)一載體支撐件,其黏附至該導電物件,其中:(i)該導電金屬連接件包括至少一根金屬主導線,該至少一根金屬主導線包括電連接至該至少一根金屬主導線之一端處之一金屬端導線之兩根或更多根金屬微導線,該至少一根金屬主導線中之該兩根或更多根金屬微導線及該金屬端導線形成一捆裝型樣;(ii)各金屬微導線之平均長度係至少1mm;且(iii)該導電金屬連接件具有小於68%之一綜合透射比。 A touch screen module, comprising: a conductive object, the conductive object comprising a first support side and a second opposite a transparent substrate on the support side; and the conductive object comprises on the first support side: (a) a conductive metal mesh, (b) a conductive metal connector electrically connected to the conductive metal mesh, and a case, (c) a transparent region, which is external to both the conductive metal mesh and the conductive metal connector, (d) two or more separate conductors that are electrically connected to the conductive metal connector a metal main conductor, and (e) a carrier support adhered to the electrically conductive article, wherein: (i) the electrically conductive metal connector comprises at least one metal main conductor, the at least one metal main conductor comprising an electrical connection Two or more metal micro-wires of one of the metal end wires at one end of the at least one metal main conductor, the two or more metal micro-wires of the at least one metal main conductor and the metal end wire Forming a bundle of patterns; (ii) each metal microwire has an average length of at least 1 mm; and (iii) the conductive metal connector has an overall transmittance of less than 68%.
2.如實施例1之觸控式螢幕模組,其中該載體支撐件黏附至該導電物件之該第二支撐側。 2. The touch screen module of embodiment 1, wherein the carrier support is adhered to the second support side of the conductive article.
3.如實施例1之觸控式螢幕模組,其中該載體支撐件黏附至該導電物件之該第一支撐側。 3. The touch screen module of embodiment 1, wherein the carrier support is adhered to the first support side of the conductive article.
4.如實施例1至3中任一項之觸控式螢幕模組,其中該兩個或更多個單獨之導體係一帶狀電纜中之導線。 4. The touch screen module of any of embodiments 1 to 3, wherein the two or more separate guiding systems are wires in a ribbon cable.
5.如實施例1至4中任一項之觸控式螢幕模組,其中該載體支撐件係來自一顯示器之光穿過之一透明蓋或膜。 5. The touch screen module of any of embodiments 1 to 4, wherein the carrier support is light from a display passing through a transparent cover or film.
6.如實施例1至5中任一項之觸控式螢幕模組,其中該載體支撐件係一顯示器之一透明蓋或膜,且該導電物件黏附至該透明蓋或膜之與 該顯示器相對之一側。 6. The touch screen module of any one of embodiments 1 to 5, wherein the carrier support member is a transparent cover or film of a display, and the conductive member is adhered to the transparent cover or film The display is on one side.
7.如實施例1至5中任一項之觸控式螢幕模組,其中該載體支撐件係一顯示器之一透明蓋或膜,且該導電物件位於該透明蓋或膜與該顯示器之間。 The touch screen module of any one of embodiments 1 to 5, wherein the carrier support is a transparent cover or film of a display, and the conductive object is located between the transparent cover or film and the display .
8.如實施例1至7中任一項之觸控式螢幕模組,其中該載體支撐件係一顯示器之一透明蓋,且該透明蓋黏附至該顯示器。 The touch screen module of any one of embodiments 1 to 7, wherein the carrier support is a transparent cover of a display, and the transparent cover is adhered to the display.
9.如實施例1至8中任一項之觸控式螢幕模組,其中該兩個或更多個單獨之導體電連接至一控制器。 The touch screen module of any of embodiments 1 to 8, wherein the two or more separate conductors are electrically connected to a controller.
10. 如實施例1至9中任一項之觸控式螢幕模組,其中該至少一根金屬主導線電連接至一控制器。 10. The touch screen module of any of embodiments 1 to 9, wherein the at least one metal bus is electrically connected to a controller.
11. 如實施例10之觸控式螢幕模組,其中該控制器黏附至該載體支撐件。 11. The touch screen module of embodiment 10, wherein the controller is adhered to the carrier support.
12. 如實施例10之觸控式螢幕模組,其中該控制器黏附至該透明基板之該第一支撐側。 12. The touch screen module of embodiment 10, wherein the controller is adhered to the first support side of the transparent substrate.
其他有用實施例係: Other useful embodiments are:
1.一種用於製備一觸控式螢幕模組之方法,該方法包括:提供一導電物件,該導電物件包括具有一第一支撐側及一相對第二支撐側之一透明基板;且該導電物件在該第一支撐側上包括:(a)一導電金屬網格,(b)一導電金屬連接件,其電連接至該導電金屬網格,及視情況,(c)透明區域,其等在該導電金屬網格及該導電金屬連接件兩者外部,其中:(i)該導電金屬連接件包括至少一根金屬主導線,該至少一根金屬主導線包括電連接至該至少一根金屬主導線之一端處之一金屬端 導線之兩根或更多根金屬微導線,該至少一根金屬主導線中之該兩根或更多根金屬微導線及該金屬端導線形成一捆裝型樣;(ii)各金屬微導線之平均長度係至少1mm;且(iii)該導電金屬連接件具有小於68%之一綜合透射比;將該導電金屬連接件中之該金屬主導線之各者電連接至一單獨導體;以及將該導電物件之一側層壓至一載體支撐件。 A method for preparing a touch screen module, the method comprising: providing a conductive object, the conductive member comprising a transparent substrate having a first support side and a second support side; and the conductive The object on the first support side comprises: (a) a conductive metal mesh, (b) a conductive metal connector electrically connected to the conductive metal mesh, and optionally, (c) a transparent region, etc. Outside the electrically conductive metal mesh and the electrically conductive metal connector, wherein: (i) the electrically conductive metal connector comprises at least one metal main conductor, the at least one metal main conductor comprising an electrical connection to the at least one metal One of the ends of the main wire Two or more metal microwires of the wire, the two or more metal microwires of the at least one metal conductor wire and the metal end wire forming a bundle pattern; (ii) each metal microwire The average length is at least 1 mm; and (iii) the conductive metal connector has an overall transmittance of less than 68%; each of the metal conductors in the conductive metal connector is electrically connected to a separate conductor; One of the electrically conductive articles is laminated to a carrier support.
2.如實施例1之方法,其中層壓該導電物件包括將該導電物件之該第二支撐側層壓至該載體支撐件。 2. The method of embodiment 1, wherein laminating the electrically conductive article comprises laminating the second support side of the electrically conductive article to the carrier support.
3.如實施例1或2之方法,其中層壓該導電物件包括將該導電物件之該第一支撐側層壓至該載體支撐件。 3. The method of embodiment 1 or 2, wherein laminating the electrically conductive article comprises laminating the first support side of the electrically conductive article to the carrier support.
4.如實施例1至3中任一項之方法,其包括使用兩個或更多個單獨之導體作為一帶狀電纜中之導線。 4. The method of any of embodiments 1 to 3, comprising using two or more separate conductors as the wires in a ribbon cable.
5.如實施例1至4中任一項之方法,其中該載體支撐件係來自一顯示器之光穿過之一透明蓋或膜。 5. The method of any of embodiments 1 to 4, wherein the carrier support is light from a display through a transparent cover or film.
6.如實施例1至5中任一項之方法,其中該載體支撐件係一顯示器之一透明蓋或膜,且該方法進一步包括將該導電物件定位至該透明蓋或膜之與該顯示器相對之一側上。 The method of any of embodiments 1 to 5, wherein the carrier support is a transparent cover or film of a display, and the method further comprises positioning the conductive article to the transparent cover or film and the display On one side of the opposite side.
7.如實施例1至6中任一項之方法,其中該載體支撐件係一顯示器之一透明蓋或膜,且該方法進一步包括將該導電物件定位在該透明蓋或膜與該顯示器之間。 The method of any of embodiments 1 to 6, wherein the carrier support is a transparent cover or film of a display, and the method further comprises positioning the conductive article on the transparent cover or film and the display between.
8.如實施例1至7中任一項之方法,其中該載體支撐件係一顯示器之一透明蓋,且該方法進一步包括將該透明蓋黏附至該顯示器。 The method of any of embodiments 1 to 7, wherein the carrier support is a transparent cover of a display, and the method further comprises adhering the transparent cover to the display.
9.如實施例1至8中任一項之方法,其進一步包括將該單獨導體電連接至一控制器。 The method of any of embodiments 1 to 8, further comprising electrically connecting the individual conductors to a controller.
10. 如實施例1至9中任一項之方法,其進一步包括將該至少一 根金屬主導線電連接至一控制器。 10. The method of any of embodiments 1 to 9, further comprising the at least one The root metal bus is electrically connected to a controller.
11. 如實施例9或10之方法,其進一步包括將該控制器黏附至該載體支撐件。 11. The method of embodiment 9 or 10, further comprising adhering the controller to the carrier support.
5‧‧‧導電物件 5‧‧‧Electrical objects
8‧‧‧導電金屬連接件 8‧‧‧ Conductive metal connectors
10‧‧‧金屬主導線 10‧‧‧ metal main line
20‧‧‧金屬微導線 20‧‧‧Metal microwires
22‧‧‧金屬端導線 22‧‧‧Metal end wire
40‧‧‧透明基板 40‧‧‧Transparent substrate
50‧‧‧(若干)透明區域 50‧‧‧(several) transparent areas
L‧‧‧金屬微導線長度 L‧‧‧Metal microwire length
S1‧‧‧相鄰金屬主導線之間的距離 S1‧‧‧Distance between adjacent metal conductor lines
S2‧‧‧相鄰金屬微導線之間的距離 S2‧‧‧Distance between adjacent metal microwires
W‧‧‧金屬微導線寬度 W‧‧‧Metal microwire width
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US14/538,102 | 2014-11-11 | ||
US14/538,102 US20160133357A1 (en) | 2014-11-11 | 2014-11-11 | Providing electrically-conductive articles with electrically-conductive metallic connectors |
US14/538,114 | 2014-11-11 | ||
US14/538,114 US9405419B2 (en) | 2014-11-11 | 2014-11-11 | Electrically-conductive articles with electrically-conductive metallic connectors |
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US8941395B2 (en) * | 2010-04-27 | 2015-01-27 | 3M Innovative Properties Company | Integrated passive circuit elements for sensing devices |
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