TW201620103A - Aluminum alloy wire for semiconductor assembly and manufacturing method thereof - Google Patents

Abstract

An aluminum alloy wire for semiconductor assembly which is composed of 0.05 ~ 0.14 wt% Scandium (Sc), 0.01 ~ 0.1 wt% Zirconium (Zr), 0.01 ~ 0.1 wt% Silicon (Si) and the other is Aluminum (Al).

Description

Aluminum alloy wire for semiconductor package and method of manufacturing same

The present invention relates to an aluminum alloy wire for semiconductor packaging, and more particularly to an aluminum alloy wire for semiconductor package having high heat resistance and high electrical conductivity.

The aluminum alloy wire material for semiconductor packaging in the prior art includes aluminum (Al), strontium (Sc), and zirconium (Zr), and uniformly dissolves strontium (Sc) and zirconium (Zr) into aluminum (Al) through solution treatment. In addition, aging treatment is used to precipitate excess strontium (Sc) and zirconium (Zr) dissolved in aluminum (Al) to strengthen the hardness of the aluminum alloy wire, but the bonding energy between aluminum-bismuth and aluminum-zirconium (bonding energy) is very large, and strontium (Sc) and zirconium (Zr) dissolved in aluminum (Al) are not easily precipitated, causing the hardness of the aluminum alloy wire to fail to meet the requirements, so it is necessary to increase the time of aging treatment or increase 钪(Sc). The amount of addition is such that the hardness of the aluminum alloy wire meets the requirements.

The main object of the present invention is to provide an aluminum alloy wire for semiconductor packaging, which is composed of 0.05-0.14 wt% 钪(Sc), 0.01-0.1 wt% zirconium (Zr), and 0.01% by weight. 0.1 wt% bismuth (Si) and the balance aluminum (Al), wherein 0.01 to 0.1 wt% of yttrium (Si) is used to break the bonding energy between aluminum-niobium and aluminum-zirconium and to improve The hardness of the aluminum alloy wire reduces the time of aging treatment or the amount of strontium (Sc) added, thereby reducing the manufacturing cost.

The invention provides an aluminum alloy wire for semiconductor packaging, which has high heat resistance and high electrical conductivity, and the aluminum alloy wire is composed of 0.05-0.14 wt% 钪(Sc) by weight, 0.01-0.1 wt% zirconium by weight ( Zr), a weight percentage of 0.01 to 0.1 wt% bismuth (Si) and a balance of aluminum (Al), wherein the aluminum alloy wire has an IACS conductivity of more than 60% and a Vickers hardness of 50 HV or more, and the aluminum alloy wire can be It is used under the environment of 200 degrees Celsius or less. In the present embodiment, the aluminum alloy wire is composed of 0.10 wt% bismuth (Sc), 0.05% by weight zirconium (Zr), and 0.06 wt% bismuth (Si). And a balance of aluminum (Al) having an EACS conductivity of 60.2% and a Vickers hardness of 59.3 HV.

Please refer to FIG. 1 , which is a manufacturing method 10 of the aluminum alloy wire. The manufacturing method 10 includes “performing a melting process 11 ”, “performing a casting process 12 ”, “performing a solution treatment 13 ”, and “performing one Annealing treatment 14", "performing a plastic working 15" and "performing an aging treatment 16".

Referring to Fig. 1, in "Making a Melting Treatment 11", high-purity aluminum (Al), aluminum-niobium alloy (Al-Sc), aluminum-zirconium mother alloy (Al-Zr), and aluminum-niobium alloy (Al) -Si) is melted into an aluminum alloy melt, the melting treatment temperature is between 720 and 780 degrees Celsius, after the melting treatment is completed, the aluminum alloy solution is slag removed to remove unnecessary impurities in the aluminum alloy solution And stirring uniformly before the tapping, wherein the tapping temperature is 750 degrees Celsius. In the present embodiment, the high-purity aluminum is selected from 5N aluminum.

Referring to Fig. 1, after performing "melting treatment 11", the casting process is performed, and in the "casting process 12", the aluminum alloy melt is cast into an aluminum alloy material. In this embodiment, The aluminum alloy material is an ingot having a diameter of 76 to 100 mm.

Referring to Fig. 1, after performing "casting treatment 12", the solution treatment is carried out, and in the "solution treatment 13", the aluminum alloy material is placed in an environment of 600 to 650 degrees Celsius to carry out the solidification. a solution treatment, wherein the solution treatment time is 12 hours or more, so that strontium (Sc), zirconium (Zr) and bismuth (Si) in the aluminum alloy material are uniformly dissolved in aluminum (Al), and the solution treatment is completed. Thereafter, the aluminum alloy material is prepared by hot extrusion into an aluminum alloy round rod, wherein the aluminum alloy round rod has a diameter of 5-20 mm. In this embodiment, the aluminum alloy material is subjected to the solution treatment for 24 hours in an environment of 645 degrees Celsius, and the aluminum alloy material is hot extruded in an environment of 250 to 300 degrees Celsius to form the aluminum having a diameter of about 5 mm. Alloy round rod.

Referring to FIG. 1 , after performing a solution treatment 13 , the annealing treatment is performed, and in the “annealing 14 treatment”, the aluminum alloy round rod prepared by hot extrusion is placed at 250 ° C. The annealing treatment is performed under a 500 degree environment, and the annealing treatment time is 5 to 72 hours.

Referring to Fig. 1, after performing "annealing treatment 14", the plastic working is performed, and in "manual plastic working 15", the aluminum alloy round bar is processed into an aluminum alloy wire, wherein the aluminum alloy wire has dimensions The hardness of the aluminum alloy rod is 25~35 HV, and the aluminum alloy rod can be prepared by plastic processing such as extrusion, drawing or drawing. In the embodiment, the aluminum alloy round rod is drawn by cold drawing. An aluminum alloy wire having a diameter of about 0.03 to 1 mm, the aluminum alloy wire having a Vickers hardness of 30 HV.

Referring to Fig. 1, after performing "plastic processing 15", the aging treatment is performed, and in the "one-aging treatment 16", the aluminum alloy wire is placed in an environment of 275 degrees Celsius or higher to perform the aging treatment 3~ In 10 hours, the aluminum alloy wire is converted into an aluminum alloy wire. In the embodiment, the aluminum alloy wire is placed in an environment of 300 degrees Celsius for 3 hours, wherein the aluminum alloy wire is 0.05 to 0.14 by weight. Wt%钪(Sc), weight percentage 0.01~0.1 wt% zirconium (Zr), weight percentage 0.01~0.1 wt% bismuth (Si) and balance aluminum (Al), in this embodiment, the aluminum alloy The wire consisted of 0.10 wt% bismuth (Sc), 0.05 wt% zirconium (Zr), 0.06 wt% bismuth (Si), and the balance aluminum (Al).

Please refer to the following table for the solution treatment and the aging treatment of bismuth-containing aluminum alloy wires with different metal contents and bismuth-free aluminum alloy wires, wherein the high bismuth content and the bismuth-free aluminum alloy wire (#1) are Weight percent 0.15 wt% bismuth (Sc), weight percent 0.05 wt% zirconium (Zr) and balance aluminum (Al), low bismuth content and no bismuth aluminum alloy wire (#2) from 0.10 wt% by weight %钪(Sc), 0.05% by weight of zirconium (Zr) and the balance of aluminum (Al), low bismuth content and yttrium-containing aluminum alloy wire (#3) from 0.10 wt% 钪(Sc) , weight percent 0.05 wt% zirconium (Zr), weight percent 0.03 wt% bismuth (Si) and balance aluminum (Al), low bismuth content and bismuth-containing aluminum alloy wire (#4) from 0.10 wt% by weight %钪(Sc), 0.05% by weight zirconium (Zr), 0.06 wt% bismuth (Si) and the balance of aluminum (Al) and medium bismuth content and bismuth-containing aluminum alloy wire (#5) Consisting of 0.12 wt% bismuth (Sc), 0.05 wt% zirconium (Zr), 0.03 wt% bismuth (Si), and balance aluminum (Al), the bismuth-containing aluminum alloy wire and the Free of bismuth aluminum The alloy wires were subjected to the solution treatment for 24 hours at 645 ° C and the aging treatment was performed for 3 hours at 300 ° C. The yttrium-containing aluminum alloy wires (#3 and #4) are shown in the following table. The hardness is greater than the yttrium-free aluminum alloy wire (#2), and the medium bismuth content and the yttrium-containing aluminum alloy wire (#5) has a hardness greater than the yttrium content and does not contain the yttrium aluminum alloy wire (#1), thereby It can be seen that the bismuth (Si) in the aluminum alloy wire of the present invention can reduce the time of the aging treatment or the addition amount of strontium (Sc) to reduce the manufacturing cost while maintaining high heat resistance and high electrical conductivity of the aluminum alloy wire.

The scope of the present invention is defined by the scope of the appended claims, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention are within the scope of the present invention. .

10‧‧‧Methods for manufacturing aluminum alloy wires
11‧‧‧A melt treatment
12‧‧‧Making a casting process
13‧‧‧A solution treatment
14‧‧‧An annealing treatment
15‧‧‧Making a plastic working
16‧‧‧An aging treatment

1 is a flow chart showing a method of manufacturing an aluminum alloy wire for a semiconductor package according to an embodiment of the present invention.

10‧‧‧Methods for manufacturing aluminum alloy wires

11‧‧‧A melt treatment

12‧‧‧Making a casting process

13‧‧‧A solution treatment

14‧‧‧An annealing treatment

15‧‧‧Making a plastic working

16‧‧‧An aging treatment

Claims (10)

An aluminum alloy wire for semiconductor packaging, which has high heat resistance and high electrical conductivity, and the aluminum alloy wire is composed of 0.05 to 0.14 wt% 钪(Sc), 0.01% to 0.1 wt% zirconium (Zr), The weight percentage is 0.01~0.1 wt% 矽(Si) and the balance is aluminum (Al). The aluminum alloy wire for semiconductor package according to claim 1, wherein the aluminum alloy wire can be used in an environment of 200 degrees Celsius or less. The aluminum alloy wire for semiconductor package according to claim 1, wherein the aluminum alloy wire has an IACS conductivity of 60% or more. The aluminum alloy wire for semiconductor package according to claim 1, wherein the aluminum alloy wire has a Vickers hardness of 50 HV or more. A method for manufacturing an aluminum alloy wire for semiconductor packaging, comprising: performing a melting treatment to high-purity aluminum (Al), aluminum-aluminum alloy (Al-Sc), aluminum-zirconium mother alloy (Al-Zr), and aluminum bismuth The mother alloy (Al-Si) is melted into an aluminum alloy melt; a casting process is performed, and the aluminum alloy melt is cast into an aluminum alloy material; and a solution treatment is performed, and the aluminum alloy material is placed in an environment of 600 to 650 degrees Celsius. Performing the solution treatment, preparing the aluminum alloy material by hot extrusion into an aluminum alloy round rod; performing a plastic working process, processing the aluminum alloy round rod into an aluminum alloy wire; and performing an aging treatment, The aluminum alloy wire is placed in an environment of 275 degrees Celsius or higher to perform the aging treatment, and the aluminum alloy wire is converted into an aluminum alloy wire, wherein the aluminum alloy wire is 0.05-0.14 wt% 钪 (Sc) by weight, 0.01% by weight. 0.1 wt% zirconium (Zr), 0.01% to 0.1 wt% bismuth (Si) and the balance aluminum (Al). The method for manufacturing an aluminum alloy wire for semiconductor package according to claim 5, wherein the melting temperature is between 720 and 780 degrees Celsius. The method for producing an aluminum alloy wire for semiconductor package according to claim 5, wherein the solution treatment time is 12 hours or longer. The method for manufacturing an aluminum alloy wire for semiconductor package according to claim 5, wherein the aging treatment time is 3 to 10 hours. The method for manufacturing an aluminum alloy wire for semiconductor package according to claim 5, wherein an annealing treatment is further included between the solution treatment and the plastic working, and the aluminum alloy round rod is placed at 250 ° C. The annealing treatment is performed under a 500 degree environment, and the annealing treatment time is 5 to 72 hours. The method for producing an aluminum alloy wire for semiconductor package according to claim 5, wherein the aluminum alloy wire has a Vickers hardness of 50 HV or more.