TW201615872A - Deposition apparatus, assembly and method for deposition of material on a substrate - Google Patents

Abstract

An assembly (100) for deposition of material on a substrate is described. The assembly includes a first cathode (110) comprising a first target material, at least one second cathode (120) comprising at least one second target material different from the first target material, and a power supply (150) configured for supplying and controlling a power supplied to the first cathode (110) and the at least one second cathode (120) such that a ratio of a first sputtered portion of the first target material to at least a second sputtered portion of the at least one second target material can be adjusted.

Description

Deposition device, assembly and method for depositing material on a substrate

Embodiments of the present disclosure are directed to components for controlling reactive deposition processes, devices comprising the components, and methods for reactive deposition processes. Embodiments of the present disclosure are particularly directed to assemblies for co-sputtering of different materials on a substrate, devices comprising the same, and methods for co-sputtering different materials onto a substrate.

In the packaging industry, the semiconductor industry, and other industries, the deposition of thin film films on substrates, particularly flexible substrates, such as plastic films or foils, is highly desirable. Depending on the application, the film on the substrate can include metals, semiconductors, and dielectric materials or other desirable materials. In addition, the deposition of multilayers and mixture-layers on the substrate facilitates many applications. Conventionally, in order to deposit a thin film material on a substrate, vacuum coating processes such as physical vapor deposition or chemical vapor deposition are utilized.

In particular, the manufacturing industry is increasingly interested in high throughput deposition systems, such as roll-to-roll deposition systems. Especially in the display industry and photovoltaic (PV) industry, roll-to-roll deposition technology is experiencing significant growth, such as the manufacture of touch panel components, flexible displays, and flexible PV modules. For example, the roll-to-roll deposition system can include a processing drum, such as a cylindrical roller, coupled to a processing system for transporting the substrate, and on the processing drum, at least a portion of the substrate is Coating. Especially for flexible substrates, roll-to-roll coating systems are preferred due to high throughput and low manufacturing costs.

In addition, there has been increasing interest in depositing a mixture layer film composed of two or more different materials because of the opportunity to combine the properties of different materials. However, the uniformity of deposition and the controllable mixture layer film are still challenging relative to the composition of the mixture layer film.

Accordingly, an improved co-sputtering method and an apparatus capable of depositing a co-sputtering method having a high quality co-sputtered film on a substrate are desirable.

In view of the above, there is provided an assembly for depositing a material on a substrate, a deposition apparatus comprising the assembly for deposition according to embodiments described herein, and a deposition apparatus according to the scope of the independent patent application. A method of material on a substrate. Other advantages, features, aspects and details are set forth in the scope of the patent application, the specification, and the accompanying drawings.

In accordance with an aspect of the present disclosure, an assembly for depositing material on a substrate is provided. The assembly includes a first cathode, the first cathode includes a first target material, at least one second cathode, the at least one second cathode includes at least one second target material, and the at least one second target material is different a first target material; and a power supply configured to supply and control a power applied to the first cathode and the at least one second cathode such that the first sputtering portion of the first target material and the at least one The ratio of at least one second sputter portion of the two target materials can be adjusted.

In accordance with another aspect of the present disclosure, an assembly for depositing material on a substrate is provided. The assembly includes a first cathode, the first cathode includes a first target material, at least one second cathode, the at least one second cathode includes at least one second target material, and the at least one second target material is different a first target material; and a power supply configured to supply and control a power applied to the first cathode and the at least one second cathode such that the first sputtering portion of the first target material and the at least one The ratio of at least one second sputter portion of the two target materials can be adjusted. The power supply is a bipolar or multi-pole power supply, especially a power supply with a direct current (DC) generator or an alternating current (AC) oscillator. The power supply is arranged to provide a middle frequency power, which in particular has an oscillation frequency of 1 Hz to 200 kHz. Additionally, the assembly can include a controller configured to control a first power source applied to the first cathode, at least one second power source applied to the at least one second cathode, and a first applied to the first cathode a group consisting of a frequency of a power source, a frequency of at least one second power source applied to the at least one second cathode, a first power source duty cycle of the first cathode, and at least one second power source duty cycle of the at least one second cathode At least one of them. The first target material comprises one or more selected from the group consisting of ITO, ZrO ₂ , TiW, Al ₂ O ₃ , ZnO, TiO ₂ , SiO ₂ , Si ₃ N ₄ , SiN, TiN, Cr, including indium oxide and tin oxide. a group consisting of Cr ₂ O ₃ , SnO ₂ and Ta ₂ O ₅ , wherein the content of indium oxide ranges from a lower limit of 85%, in particular from a lower limit of 90%, in particular from a lower limit of 93% to an upper limit of 95%, in particular Up to 97% upper limit, in particular up to 99% upper limit, and wherein the content of tin oxide ranges from a lower limit of 1%, in particular from a lower limit of 3%, in particular from a lower limit of 5% to an upper limit of 15%, in particular to an upper limit of 10%, In particular, up to a maximum of 7%, the contents of indium oxide and tin oxide are combined to be 100%. The at least one second target material comprises one or more selected from the group consisting of ITO, ZrO ₂ , TiW, Al ₂ O ₃ , ZnO, TiO ₂ , SiO ₂ , Si ₃ N ₄ , SiN, TiN, comprising indium oxide and tin oxide, a group consisting of Cr, Cr ₂ O ₃ , SnO ₂ and Ta ₂ O ₅ , wherein the content of indium oxide ranges from a lower limit of 85%, particularly from a lower limit of 90%, particularly from a lower limit of 93% to an upper limit of 95%, In particular to an upper limit of 97%, in particular to an upper limit of 99%, and wherein the content of tin oxide ranges from a lower limit of 1%, in particular from a lower limit of 3%, in particular from a lower limit of 5% to an upper limit of 15%, in particular to an upper limit of 10%. %, especially to the upper limit of 7%, so that the contents of indium oxide and tin oxide are combined to be 100%.

In accordance with another aspect of the present disclosure, a deposition apparatus for depositing material on a substrate is provided. In accordance with embodiments described herein, the deposition apparatus includes a chamber for depositing material on a substrate positioned therein, and an assembly for depositing material on the substrate.

In accordance with another aspect of the present disclosure, a method for depositing material on a substrate is provided. The method includes applying a first power source by a power supply to a first cathode comprising a first target material; thereby applying a second power source to the at least one second comprising at least one second target material a cathode, the at least one second target material being different from the first target material; controlling a first power source applied to the first cathode and controlling a second power source applied to the at least one second cathode to adjust one of the first target materials a ratio of the first sputter portion to the at least one second sputter portion of the at least one second target material; and depositing at least a second portion of the first sputter portion of the first target material and the at least one second target material Splashing part.

The present disclosure is also related to apparatus for performing the disclosed methods and including means for performing the device portion of each of the method portions. Portions of these methods may be performed by hardware components, computers programmed with suitable software, by any combination thereof, or in any other manner. Moreover, the present disclosure is also related to a method for operating the device. It includes portions of a method for implementing each function of the device.

In order that the above-described features of the present invention can be more clearly understood, a more detailed description of the invention described above will be provided with reference to the embodiments. It is to be noted that the drawings are illustrative of exemplary embodiments and are not intended to limit the scope of the disclosure. In the drawing:

Various embodiments of the present disclosure will now be described in detail, and one or more examples thereof are illustrated in the drawings. In the description of the following figures, the same reference numerals are used to refer to the same elements. In the following, only the differences with respect to individual embodiments will be described. The examples are provided as a description of the disclosure, and are not intended to be limiting. Furthermore, features illustrated or described as part of one embodiment can be used in other embodiments or in combination with other embodiments, and further embodiments. Accordingly, the description of the present embodiments includes such retouching and variations.

In the present disclosure, the phrase "component for depositing material on a substrate" and the term "depositing component" are used interchangeably.

In the present disclosure, the phrase "duty cycle" can be understood as providing a time interval from the power source to the cathode.

In FIG. 1A, a schematic diagram of an assembly 100 for depositing material onto a substrate in accordance with embodiments described herein is shown. According to embodiments described herein, the assembly includes a first cathode 110 and at least a second cathode 120, the first cathode 110 including a first target material, and at least one of the at least one second cathode 120 includes a first target At least one second target material different in material material. Moreover, in accordance with embodiments described herein, the assembly includes a power supply 150 that is configured to supply and control a power source of the first cathode 110 and the at least one second cathode 120 such that the first target material The ratio of a first sputter portion to at least one second sputter portion of at least one second target material can be adjusted.

Accordingly, an assembly for depositing a material on a substrate in accordance with embodiments described herein provides an assembly for simultaneously co-sputtering one of the different materials. Further, when a power supply for an assembly of a deposition material is provided to supply and control a power source applied to the first cathode and the at least one second cathode, the first sputtering portion of the first target material and the at least one second target The proportion of at least one second sputter portion of the material can be adjusted. Accordingly, the assembly for depositing materials in accordance with embodiments described herein provides for deposition of a co-sputtered mixture layer film of variable and adjustable composition. Accordingly, the material properties (e.g., mechanical, chemical, or optical properties) of a co-sputtered mixture layer film can be adjustable by using an assembly for depositing materials in accordance with embodiments described herein.

An assembly for depositing material on a substrate, in accordance with an embodiment, may be combined with other embodiments described herein, and the power supply 150 may be a bipolar or multipolar power supply. By providing a bipolar or multipole power supply, the power supply can be applied to two or more cathodes simultaneously. According to this, a common layer film of a mixture of two or more materials can be realized.

Further, the power supply 150 may include a direct current generator and an alternating current oscillator. Accordingly, the power supply can be configured as a pulsar power supply. By providing a deposition assembly comprising a pulsar power supply, in particular a bipolar or multi-pole power supply, the deposition flux of the co-sputtering layer film can be increased by allowing operation at higher powers. (deposition throughput). In addition, the deposition rate and yield of the deposition of the common sputter mixture layer can be improved. In addition, arcing can be reduced or even eliminated.

It will be understood that the cathode referred to herein may be a cathode or an anode when an alternating current source is applied. In the present disclosure, a sputtering target is referred to as a cathode, and its function may be an anode function even during a half cycle of an alternating frequency waveform.

An assembly for depositing material on a substrate, in accordance with an embodiment, can be combined with other embodiments described herein, and the power supply 150 can be configured to provide an intermediate frequency power supply. According to an embodiment herein, the Middle Frequency (MF) is at a lower limit of 1 Hz, in particular from a lower limit of 500 Hz, in particular from a lower limit of 1 kHz to an upper limit of 10 kHz, in particular to an upper limit of 100 kHz, in particular to an upper limit of 350 Hz. In the range of kHz.

An assembly for depositing material on a substrate according to an embodiment, which may be combined with other embodiments described herein, an intermediate frequency (MF), in particular a bipolar or multi-pole power supply, may have exemplary A "top hat" waveform is shown in Figures 2A and 2B. Accordingly, the speed of an arc management system is achieved by providing a bipolar or multi-pole power supply as described herein, as compared to conventional mid frequency AC sputtering. It mitigates the effects on the arc generated by the mixed composition redeposition zones and it ensures that parallel effects based on the arc generated by the particles can be reduced.

The power supply can be set to provide an operating voltage of an average of 0 V to 1030 V, especially an operating voltage of 150 V to 1000 V. In addition, the power supply can be set to provide a maximum operating current of 25 A to 200 A, such as 75 A to 100 A or 100 A to 200 A.

As exemplarily illustrated in FIG. 1B, an assembly 100 for depositing materials according to an embodiment, which may be combined with other embodiments described herein, at least one second cathode 120 may include a third cathode 130. Additionally, the assembly 100 for depositing material can include a fourth cathode, as exemplarily illustrated in FIG. 1B. Although not explicitly illustrated in the figures, at least one second cathode 120 in accordance with embodiments described herein can include more cathode components, such as a fifth cathode, a sixth cathode, and the like. In particular, the at least one second cathode 120 can include any number n of cathode assemblies.

Accordingly, exemplarily referenced to FIG. 1B, based on the number of cathodes connected to the power supply 150, the power supply can be a three-, four-, five-, six- or n-pole power supply. An assembly for depositing material on a substrate according to an embodiment, which may be combined with other embodiments described herein, the number of poles of the power supply being adapted to the number of cathodes connected to the power supply.

Accordingly, the components of the embodiments described herein for depositing material on a substrate provide for co-sputtering a film of a mixture of at least two different materials. For example, in the case where the deposition assembly comprises a bipolar power supply and two cathodes, a layer film of a mixture of two different materials that is co-sputtered can be obtained. Accordingly, in the case where the deposition assembly includes an n-pole (multi-pole) power supply and n (multiple) cathodes, a mixture film of a mixture of n (multiple) different materials can be obtained.

As exemplarily illustrated in FIG. 1B, an assembly 100 for depositing material, in accordance with an embodiment, may be combined with other embodiments described herein, the assembly may include a controller 160, and the controller 160 is configured to Controlling at least one parameter, the at least one parameter being a first operating voltage applied to the first cathode 110 (eg, a first operating voltage and/or a first operating current, particularly a function of time, and And/or a first operating current), a second operating voltage applied to the at least one second cathode 120 (eg, a second operating voltage and/or a second operating current, in particular a second operating voltage as a function of time and/or Or a second operating current), a frequency of a first power source applied to the first cathode 110, a frequency of the at least one second power source applied to the at least one second cathode 120, a first power source responsibility period of the first cathode 110, And at least one parameter of the group consisting of at least one second power source duty cycle of the at least one second cathode 120.

Accordingly, deposition assemblies in accordance with embodiments described herein provide various controllable parameters through the power supply to adjust the material properties (eg, mechanical, chemical, or optical properties) of a common sputter mixture layer film. Accordingly, the different material properties of the total sputter mixture film can be adjusted by controlling different parameters of the power supply.

An assembly for depositing a material on a substrate according to an embodiment, which may be combined with other embodiments described herein, the first target material may comprise one or more selected from the group consisting of ITO, ZrO ₂ , TiW, Al ₂ O ₃ a group consisting of ZnO, TiO ₂ , SiO ₂ , Si ₃ N ₄ , SiN, TiN, Cr, Cr ₂ O ₃ , SnO _{2 ,} and Ta ₂ O ₅ , for example, ITO containing 97% indium oxide (In ₂ O _{3 )} And 3% of tin oxide (SnO ₂ ), such as ITO containing 90% indium oxide and 10% tin oxide. In particular, the first target material may include ITO containing indium oxide (In ₂ O ₃ ) and tin oxide (SnO ₂ ), wherein the content of indium oxide ranges from a lower limit of 85%, particularly from a lower limit of 90%, particularly From a lower limit of 93% to an upper limit of 95%, in particular to an upper limit of 97%, in particular to an upper limit of 99%, and wherein the content of tin oxide ranges from a lower limit of 1%, in particular from a lower limit of 3%, in particular from a lower limit of 5% to The upper limit is 15%, in particular to the upper limit of 10%, in particular to the upper limit of 7%, so that the contents of indium oxide and tin oxide are combined to be 100%.

An assembly for depositing a material on a substrate according to an embodiment, which may be combined with other embodiments described herein, the at least one second target material comprising one or more selected from the group consisting of ITO, ZrO ₂ , TiW, Al ₂ O ₃ , ZnO, TiO ₂ , SiO ₂ , Si ₃ N ₄ , SiN, TiN, Cr, Cr ₂ O ₃ , SnO ₂ and Ta ₂ O ₅ group, ITO in particular contains 97% indium oxide and 3% ITO of tin oxide, in particular ITO comprising 90% indium oxide and 10% tin oxide. In particular, the at least one second target material may include ITO containing indium oxide (In ₂ O ₃ ) and tin oxide (SnO ₂ ), wherein the content of indium oxide ranges from a lower limit of 85%, particularly from a lower limit of 90%. In particular, from a lower limit of 93% to an upper limit of 95%, in particular to an upper limit of 97%, in particular to an upper limit of 99%, and wherein the content of tin oxide ranges from a lower limit of 1%, in particular from a lower limit of 3%, in particular from a lower limit of 5 % to the upper limit of 15%, in particular to the upper limit of 10%, in particular to the upper limit of 7%, so that the contents of indium oxide and tin oxide are combined to be 100%.

Accordingly, the deposition assembly of the embodiments described herein provides for co-sputtering a film of a mixture of at least two different materials as defined herein.

An assembly for depositing a material on a substrate according to an embodiment, which may be combined with other embodiments described herein, the first cathode 110 and/or the at least one second cathode 120 may be selected from a planar cathode, A group consisting of a rotary cathode and a magnetron cathode.

In FIG. 2A, a configuration of a plurality of deposition assemblies in accordance with embodiments described herein, such as an arrangement for depositing a first deposition assembly 101 and a second deposition assembly 102 on a substrate, is shown. As exemplarily illustrated in FIG. 2A, each of the plurality of components (101, 102) can include a power supply 150 in accordance with one of the embodiments described herein. For example, the first deposition assembly 101 can include a first power supply 151 and the second deposition assembly 102 can include a second power supply 152.

Moreover, as exemplarily illustrated in FIG. 2A, each of the plurality of components (101, 102) may include a first cathode 110 including a first target material, and at least a second cathode 120, at least A second cathode 120 includes at least one second target material that is different from the first target material. Although not explicitly illustrated in the drawings, the configuration of the deposition assembly may include more than two deposition assemblies, such as the six deposition assemblies exemplarily shown in FIG. 5A, and FIG. 5A is illustrated in accordance with this document. The described embodiment includes a deposition apparatus having a deposition configuration of six deposition assemblies.

By providing a configuration of a plurality of deposition assemblies in accordance with embodiments described herein, a plurality of co-sputtered mixture layer films can be simultaneously deposited on a substrate. Additionally or alternatively, a stack of a plurality of co-sputtered mixture layer films may be deposited on the substrate, for example, with the substrate moving relative to the plurality of cathodes of the plurality of deposition assemblies. Furthermore, one or more deposition components of the plurality of deposition assemblies may be differently disposed for the target material of the first cathode and/or the target material for the second cathode such that a plurality of co-sputtered mixture layers are The stack can be deposited on a substrate, wherein each stack can have a different composition based on the target material selected by the first cathode.

A deposition assembly according to an embodiment, which may be combined with other embodiments described herein, may be provided to supply and control a power source applied to one of the first cathode 110 and the at least one second cathode 120, such as 2A The dashed line 170 in the figure is exemplarily represented. As exemplarily shown by the dashed line 170 in FIG. 2A, the power supply 150 can be configured to supply and control a first power source 171 (eg, a first operating voltage and/or first operation) applied to the first cathode 110. Current, in particular a first operating voltage and/or first operating current as a function of time). Additionally, the power supply 150 can be configured to supply and control at least one second power source 172 (eg, a second operating voltage and/or a second operating current, particularly a function of time) applied to the at least one second cathode 120 The second operating voltage and/or the second operating current).

Additionally or alternatively, the power supply 150 can be configured to supply and control the frequency of a first power source applied to the first cathode 110 and/or the frequency of the at least one second power source applied to the at least one second cathode 120. Additionally or alternatively, the power supply 150 can be configured to supply and control a first power responsibility duty cycle of the first cathode 110 and/or at least one second power supply duty cycle of the at least one second cathode 120. Accordingly, deposition assemblies in accordance with embodiments described herein provide various controllable parameters through the power supply to adjust the material properties (eg, mechanical, chemical, or optical properties) of a common sputter mixture layer film.

Accordingly, the different material properties of the total sputter mixture film can be adjusted by controlling different parameters of the power supply. Accordingly, a plurality of co-sputtered mixture layer films having different compositions can be deposited at different locations on a static substrate by using a configuration of a plurality of deposition assemblies in accordance with embodiments described herein. In the case of a dynamic sputtering process, such as when the substrate is moved relative to a plurality of cathodes of a plurality of deposition assemblies, a stack of one or more co-sputtered mixture layer films can be deposited on the substrate.

An assembly 100 for depositing material on a substrate according to an embodiment, which may be combined with other embodiments described herein, the power supply 150 may be configured to supply and control a plurality of cathode assemblies, such as a first cathode 110 and At least one second cathode 120, such as a second cathode, a third cathode 130, and a fourth cathode 140, is exemplarily shown in FIG. 2B. Although not explicitly illustrated in the drawings, the power supply 150 can be configured to supply and control any number n of cathode assemblies, particularly by an n-pole power supply/multi-pole power supply to supply and control any Number n of cathode assemblies.

As exemplarily shown by the dashed line 170 in FIG. 2B, the power supply 150 can be configured to supply and control one of the power supplies applied to each of the plurality of cathodes. For example, as exemplarily illustrated in FIG. 2B, power supply 150 can be configured to supply and control an individual power source applied to one of each individual cathode of the plurality of cathodes. For example, the power supply 150 can be configured to supply and control one of the operating voltages of each of the individual cathodes and/or an operating current, particularly a function of time, a first operating voltage and/or a first operating current, The frequency and/or duty cycle of the individual power supplies applied to each individual cathode is supplied and controlled.

Figure 3 shows a schematic of a deposition apparatus 200 for depositing material onto a substrate in accordance with embodiments described herein. A deposition apparatus 200 for depositing a material on a substrate according to embodiments described herein includes a chamber 210 for depositing material on a substrate 220 therein, and a deposition material for use in accordance with embodiments described herein An assembly 100 on the substrate 220.

A deposition apparatus according to an embodiment, which may be combined with other embodiments described herein, may be arranged to move the substrate relative to the deposition assembly. Accordingly, in the case of a dynamic sputtering process, such as when the substrate is moved relative to the plurality of cathodes of the deposition assembly, a stack of one or more co-sputtered mixture layer films can be deposited on the substrate.

Accordingly, in the case of a static sputtering process, such as when the substrate does not move relative to the plurality of cathodes of the deposition assembly during the deposition process, a film of the co-sputtering mixture having different compositions may be deposited on the static substrate. In a plurality of defined locations, the different constituents are based on the target material selected by the plurality of cathodes. Accordingly, the deposition assembly of the embodiments as described herein provides a wide variety of adjustable co-sputter mixture layer films. Further, in the case where the substrate moves relative to the plurality of cathodes of the plurality of deposition assemblies of the deposition apparatus, a stack of a plurality of co-sputtered mixture layer films may be deposited on the substrate.

A deposition assembly according to an embodiment, which may be combined with other embodiments described herein, may be a flexible substrate or a rigid substrate. Those skilled in the art will appreciate that the components for deposition as described herein can be used to deposit materials onto a flexible substrate or a rigid substrate.

In FIG. 4, a cross-sectional view of a common sputter mixture layer film 300 deposited on a substrate 220, which can be obtained by using a deposition assembly according to embodiments described herein, is illustrated. In particular, it is obtained by using a deposition apparatus comprising a deposition assembly according to embodiments described herein. In particular, FIG. 4 is a cross-sectional view showing an exemplary co-sputtering mixture layer film 300 including a first material 310 and a second material 320.

Although not explicitly shown in the drawings, it will be apparent to those skilled in the art that by using a deposition assembly comprising a plurality of cathodes as described herein, for example, with FIG. 1B, FIG. 2B, and FIG. In association with FIG. 5A and FIG. 5B, a co-sputtering mixture layer film composed of two or more different materials can be obtained. The number of different materials through a common sputtered mixture layer film deposited using deposition assemblies in accordance with embodiments described herein can be viewed depending on the number of cathodes having different target materials.

For example, by using a deposition assembly according to embodiments described herein, in particular by using a deposition apparatus comprising a deposition assembly according to embodiments described herein, it is possible to obtain two different ITOs (indium tin oxide) A composition of a common sputter mixture layer, such as the composition of ITO having different levels of indium oxide and tin oxide as described herein. For example, the first material of the co-sputtering mixture layer film may be ITO containing 97% indium oxide and 3% tin oxide, and the second material of the co-sputtering mixture layer film may be 90% indium oxide and 10%. ITO of tin oxide.

According to this, when the film of the co-sputtering mixture is tempered at a low temperature, for example, below 350 ° C, especially below 200 ° C, especially below 100 ° C, the first material can crystallize and cause Crystallization of the second material. Accordingly, the film of the co-sputtering mixture layer may be crystalline after tempering the first material and the second material of the co-sputtering mixture layer film.

Figure 5 shows a schematic of a deposition apparatus 200 for depositing a material on a substrate, particularly for reactive deposition of a layer on a substrate, such as a flexible substrate, in accordance with embodiments described herein.

A deposition apparatus 200 according to an embodiment, which may be combined with other embodiments described herein, may include an unwind roller 132 and a rewind roller 134 for unwinding prior to deposition The substrate 220 and the substrate 220 are wound. The deposition apparatus 200 can include a roll system (not shown) for transferring the substrate 220 through different processing chambers. In particular, the deposition apparatus according to embodiments herein may be constructed as a sputter roll coater for roll-to-roll deposition on a plastic film.

As shown in FIG. 5A and FIG. 5B , the deposition apparatus 200 further includes a substrate unwinding module 202 , a processing module 203 , and a substrate winding module 204 (substrate Up-winding module). The processing module 203 can include a plurality of rollers (311, 312) for properly transporting the substrate 220 to a processing drum 306, and for facilitating the processed substrate 220', particularly the coated substrate, from the processing module 203 is transported to the substrate roll module 204. According to an embodiment of the present disclosure, the deposition apparatus 200 may be a roll-to-roll deposition apparatus such as SmartWebTM manufactured by Applied Materials.

A deposition apparatus 200 according to an embodiment, which may be combined with other embodiments described herein, a deposition apparatus for depositing material on a substrate may include at least one component for depositing material on a substrate according to embodiments herein. For example, as exemplarily illustrated in FIGS. 5A and 5B, the deposition apparatus 200 can include a plurality of components for depositing materials on a substrate, such as six components (100- according to embodiments herein). 1, 100-2, 100-3, 100-4, 100-5, 100-6). Each of the plurality of components for depositing a material may be disposed to deposit one or a layer on the substrate 220. For example, one of the layers of a stack can be deposited in one of the other deposition chambers or deposited in a plurality of separate compartments in a deposition chamber. According to an embodiment, each compartment may be used to deposit additional material of the same film.

According to some embodiments, which may be combined with other embodiments described herein, deposition apparatus 200 may comprise a plurality of (as shown in Figures 5A and 5B) compartments, chambers or subchambers ( Sub-chambers), such that each compartment can be operated under individual processing parameters, such as individual process gases or individual power supplies applied to multiple cathodes. As depicted in Figure 5A, the device can include six deposition assemblies in accordance with embodiments described herein. For ease of reference, only the power supply 150 of the deposition assembly 100-1 is shown.

As exemplarily illustrated in FIG. 5B, in accordance with some embodiments, more than two cathodes may be coupled to a power supply, particularly a multi-pole power supply. For example, a plurality of cathodes of a first set of deposition assemblies can be coupled to a multi-pole first power supply 151, and a plurality of cathodes of a second set of deposition assemblies can be coupled to a second power supply 152.

According to further embodiments, the deposition apparatus 200 having six compartments and/or six deposition assemblies illustrated in Figures 5A and 5B may be further scaled up, for example 8, 10 or even 12 compartments or depositions. Component. Accordingly, with such an expanded scale, since the film of the substrate speed limited based on the film thickness and/or the deposition rate can be deposited using an additional cathode, the flux can be further increased.

Although not explicitly illustrated in the drawings, those skilled in the art understand that, in accordance with some embodiments, a deposition apparatus can be configured to deposit material onto a flexible substrate or a rigid substrate.

Figure 6 shows a block diagram of a method 400 for depositing material onto a substrate in accordance with embodiments described herein. A method for depositing a material on a substrate according to an embodiment, the method comprising the step 410 of applying a first power source to a first cathode comprising a first target material by a power supply, and thereby the power supply a step 420 of applying a second power source to the at least one second cathode comprising at least one second target material, the at least one second target material being different than the first target material. Additionally, the method 400 for depositing material on a substrate includes a step 430 of controlling a first power source applied to the first cathode and a second power source applied to the at least one second cathode to adjust a first material of the first target material a ratio of a sputtered portion to at least one second sputtered portion of at least one second target material. Additionally, the method 400 for depositing material on the substrate including the controlling step 430 includes the step 440 of depositing a first sputter portion of the first target material and at least a second sputter portion of the at least one second target material. . Accordingly, the method for depositing a material on a substrate of the embodiment provides a ratio of adjusting a first sputter portion of the first target material and at least a second sputter portion of the at least one second target material such that The composition and material properties of the co-sputtered mixture layer film obtained by this method can be adjusted and controlled.

A method for depositing a material on a substrate, in accordance with an embodiment, in combination with other embodiments described herein, controlling a first power source applied to the first cathode and controlling a second power source applied to the at least one second cathode Step 430 can include cyclic switching through the first cathode and the at least one second cathode.

A method for depositing a material on a substrate according to an embodiment, which may be combined with other embodiments described herein, the first power source applied to the first cathode and the second power source applied to the at least one second cathode may include a The intermediate frequency, which has an oscillation frequency from the lower limit of 1 Hz, in particular from the lower limit of 500 Hz, in particular from the lower limit of 1 kHz to the upper limit of 10 kHz, in particular to the upper limit of 100 kHz, in particular to the upper limit of 350 kHz.

A method for depositing a material on a substrate according to an embodiment, which may be combined with other embodiments described herein, a first power source applied to the first cathode and a second power source applied to the at least one second cathode may pass through Bipolar or multi-pole power supply. The first power source and the second power source can have an intermediate frequency as described herein, particularly a "top hat" waveform, as exemplarily shown in Figures 2A and 2B. Accordingly, the speed of an arc management system and the reduction of the arc generated for the mixed composition redeposition zones compared to conventional intermediate frequency AC sputtering The effect and its parallel effect of ensuring an arc based on the particles can be reduced.

A method for depositing a material on a substrate according to an embodiment, which may be combined with other embodiments described herein, may be used to deposit material on a flexible substrate or a rigid substrate.

A method for depositing a material on a substrate, in accordance with an embodiment, in combination with other embodiments described herein, controlling a first power source applied to the first cathode and controlling a second power source applied to the at least one second cathode Step 430 can include controlling a first duty cycle of the first cathode and controlling at least a second duty cycle of the at least one second cathode. Accordingly, a method for depositing a material on a substrate in accordance with embodiments described herein provides a plurality of films of a common sputter mixture layer for depositing a variable and adjustable composition. Accordingly, the material properties (e.g., mechanical, chemical, or optical properties) of a co-sputtered mixture layer film can be adjustable by using the methods for depositing materials of the embodiments described herein.

A method for depositing a material on a substrate according to an embodiment, in combination with other embodiments described herein, controlling a first power source (eg, a first operating voltage and/or a first operating current) applied to the first cathode a first operating voltage and/or a first operating current as a function of time) and a second power source (eg, a second operating voltage and/or a second operating current) applied to the at least one second cathode, in particular A second operating voltage and/or a second operating current as a function of time may include controlling a frequency of a first power source applied to the first cathode and controlling a frequency of the at least one second power source applied to the at least one second cathode. Accordingly, the method for depositing a material on a substrate of an embodiment provides an increase in deposition flux for the fabrication of a film of a common sputter mixture layer by operation at higher power. In addition, the deposition rate and yield of the deposition of the common sputter mixture layer can be improved.

A method for depositing a material on a substrate according to an embodiment, in combination with other embodiments described herein, depositing a first sputter portion of the first target material and at least one of the at least one second target material The step 440 of sputtering the portion may include depositing one or more first target materials and depositing one or more at least one second target material, the one or more first target materials being selected from the group consisting of ITO, ZrO ₂ , Group of TiW, Al ₂ O ₃ , ZnO, TiO ₂ , SiO ₂ , Si ₃ N ₄ , SiN, TiN, Cr, Cr ₂ O ₃ , SnO ₂ and Ta ₂ O ₅ , ITO particularly contains 97% ITO of indium oxide and 3% tin oxide, especially ITO containing 90% indium oxide and 10% tin oxide. One or more at least one second target material is selected from the group consisting of ITO, ZrO ₂ , TiW, Al ₂ O ₃ , ZnO, TiO ₂ , SiO ₂ , Si ₃ N ₄ , SiN, TiN, Cr, Cr ₂ O ₃ , A group consisting of SnO ₂ and Ta ₂ O ₅ , ITO is particularly ITO containing 97% indium oxide and 3% tin oxide, particularly ITO containing 90% indium oxide 10% and tin oxide.

A method for depositing a material on a substrate, in accordance with embodiments, in combination with other embodiments described herein, the first sputtered portion of the deposited first target material can include one or more first target materials, The one or more first target materials comprise ITO containing indium oxide (In ₂ O ₃ ) and tin oxide (SnO ₂ ), wherein the content of indium oxide ranges from a lower limit of 85%, particularly from a lower limit of 90%, It is from the lower limit of 93% to the upper limit of 95%, in particular to the upper limit of 97%, in particular to the upper limit of 99%, and wherein the content of tin oxide ranges from the lower limit of 1%, in particular from the lower limit of 3%, in particular from the lower limit of 5%. To the upper limit of 15%, in particular to the upper limit of 10%, in particular to the upper limit of 7%, so that the contents of indium oxide and tin oxide are combined to be 100%.

A method for depositing a material on a substrate according to embodiments, in combination with other embodiments described herein, depositing at least one second sputter portion of at least one second target material may include one or more at least one a second target material, the one or more at least one second target material comprising ITO containing indium oxide (In ₂ O ₃ ) and tin oxide (SnO ₂ ), wherein the content of indium oxide ranges from a lower limit of 85%, In particular, from the lower limit of 90%, in particular from the lower limit of 93% to the upper limit of 95%, in particular to the upper limit of 97%, in particular to the upper limit of 99%, and wherein the content of tin oxide is in the range from the lower limit of 1%, in particular from the lower limit 3 %, in particular from a lower limit of 5% to an upper limit of 15%, in particular to an upper limit of 10%, in particular to an upper limit of 7%, so that the contents of indium oxide and tin oxide are combined to be 100%.

Accordingly, a method for depositing a material on a substrate in accordance with embodiments described herein provides a method for simultaneously co-sputtering different materials. In addition, the methods described herein for deposition provide an efficient method of depositing a co-sputtered mixture layer film of variable and adjustable composition on a substrate. Moreover, the method according to embodiments described herein allows for adjustment of material properties (eg, mechanical, chemical, or optical properties) of a common sputter mixture layer film.

100, 100-1, 100-2, 100-3, 100-4, 100-5, 100-6‧‧‧ components
101‧‧‧First deposition component
102‧‧‧Second sedimentary components
110‧‧‧first cathode
120‧‧‧second cathode
130‧‧‧third cathode
132‧‧‧ Heavy roll
134‧‧‧Unwinding roller
140‧‧‧fourth cathode
150‧‧‧Power supply
151‧‧‧First power supply
152‧‧‧Second power supply
160‧‧‧ Controller
170‧‧‧ dotted line
171‧‧‧First power supply
172‧‧‧second power supply
200‧‧‧Deposition device
202‧‧‧Substrate unwinding module
203‧‧‧Processing module
204‧‧‧Substrate roll module
210‧‧‧ chamber
220‧‧‧Substrate
220'‧‧‧Processed substrate
300‧‧‧Co-spraying mixture film
306‧‧‧Processing drum
310‧‧‧First material
311, 312‧‧ ‧ rolls
320‧‧‧Second material
400‧‧‧ method
410‧‧‧ Apply a first power source
420‧‧‧ Apply a second power source
430‧‧‧Control
440‧‧‧deposition

FIG. 1A shows a schematic diagram of an assembly for depositing material on a substrate in accordance with embodiments described herein. FIG. 1B shows a schematic diagram of an assembly for depositing material on a substrate in accordance with embodiments described herein. 2A is a schematic diagram showing the arrangement of a plurality of components for depositing materials on a substrate in accordance with embodiments described herein. Figure 2B shows a schematic of an assembly for depositing material on a substrate in accordance with embodiments described herein. Figure 3 shows a schematic of a deposition apparatus for depositing material onto a substrate in accordance with embodiments described herein. Figure 4 is a schematic illustration of a film of a common sputter mixture layer deposited on a substrate, particularly obtained by using an assembly for depositing material on a substrate in accordance with embodiments described herein. Figure 5A shows a schematic of a deposition apparatus for depositing material onto a substrate in accordance with embodiments described herein. Figure 5B shows a schematic of a deposition apparatus for depositing material onto a substrate in accordance with embodiments described herein. Figure 6 shows a block diagram illustrating a method for depositing a material on a substrate in accordance with embodiments described herein.

100‧‧‧ components

110‧‧‧first cathode

120‧‧‧second cathode

150‧‧‧Power supply

Claims (20)

An assembly (100) for depositing material on a substrate, the assembly comprising: a first cathode (110) comprising a first target material; at least a second cathode (120) comprising at least a second target Material material, the at least one second target material is different from the first target material; and a power supply (150) configured to supply and control application to the first cathode (110) and the at least one A power source of the two cathodes (120) is such that a ratio of a first sputter portion of the first target material and at least a second sputter portion of the at least one second target material can be adjusted. The component (100) of claim 1, wherein the power supply (150) is a bipolar or multi-pole power supply, particularly a DC generator or an AC oscillator. The component (100) of claim 1, wherein the power supply (150) is configured to provide an intermediate frequency power supply, particularly an oscillation frequency of 1 Hz to 350 kHz. . The component (100) of claim 1, wherein the component further comprises: a controller (160) configured to control a first power source applied by the first cathode (110) At least one second power source to the at least one second cathode (120), a frequency of a first power source applied to the first cathode (110), and at least a second applied to the at least one second cathode (120) At least one of a frequency of the power source, a first power responsibility duty cycle of the first cathode (110), and a group of at least one second power supply duty cycle of the at least one second cathode (120). The component (100) of claim 1, wherein the first target material comprises one or more selected from the group consisting of ITO, ZrO ₂ , TiW, Al ₂ O ₃ , ZnO comprising indium oxide and tin oxide. a group consisting of TiO ₂ , SiO ₂ , Si ₃ N ₄ , SiN, TiN, Cr, Cr ₂ O ₃ , SnO ₂ and Ta ₂ O ₅ , wherein the content of indium oxide ranges from a lower limit of 85% to an upper limit of 99 %, and wherein the content of tin oxide ranges from a lower limit of 1% to an upper limit of 15%, so that the contents of indium oxide and tin oxide are combined to be 100%. The component (100) of claim 13, wherein the at least one second target material comprises one or more selected from the group consisting of ITO, ZrO ₂ , TiW, Al ₂ O ₃ comprising indium oxide and tin oxide. a group consisting of ZnO, TiO ₂ , SiO ₂ , Si ₃ N ₄ , SiN, TiN, Cr, Cr ₂ O ₃ , SnO ₂ and Ta ₂ O ₅ , wherein the content of indium oxide ranges from a lower limit of 85% to The upper limit is 99%, and the content of tin oxide ranges from the lower limit of 1% to the upper limit of 15%, so that the contents of indium oxide and tin oxide are combined to be 100%. The assembly (100) of any one of clauses 1 to 6, wherein the first cathode is selected from the group consisting of a planar cathode, a rotating cathode, and a magnetron cathode. The assembly (100) of any one of clauses 1 to 6, wherein the at least one second cathode is selected from the group consisting of a planar cathode, a rotating cathode, and a magnetron cathode. . The component (100) of claim 1, wherein the power supply (150) is a bipolar or multi-pole power supply, particularly a power supply having a DC generator or an AC oscillator. a power supply (150), wherein the power supply (150) is configured to provide an intermediate frequency power supply, wherein the component (100) further includes a controller (160) configured to control application by a first power source to the first cathode (110), at least a second power source applied to the at least one second cathode (120), a frequency of a first power source applied to the first cathode (110), application a frequency of the at least one second power source to the at least one second cathode (120), a first power source responsibility period of the first cathode (110), and at least one second power source responsibility of the at least one second cathode (120) At least one of the groups consisting of cycles, wherein the first target material comprises one or more selected from the group consisting of ITO, ZrO ₂ , TiW, Al ₂ O ₃ , ZnO, TiO ₂ comprising indium oxide and tin oxide. _{, SiO 2, Si 3 N 4} , SiN, TiN, Cr, Cr 2 O 3, SnO 2 and Ta ₂ O ₅ the group consisting of Wherein the content of indium oxide ranges from a lower limit of 85% to an upper limit of 99%, and wherein the content of tin oxide ranges from a lower limit of 1% to an upper limit of 15%, so that the contents of indium oxide and tin oxide are combined to be 100%, wherein the at least a second target material comprising one or more selected from the group consisting of ITO, ZrO ₂ , TiW, Al ₂ O ₃ , ZnO, TiO ₂ , SiO ₂ , Si ₃ N ₄ , SiN, TiN, comprising indium oxide and tin oxide, a group consisting of Cr, Cr ₂ O ₃ , SnO ₂ and Ta ₂ O ₅ , wherein the content of indium oxide ranges from a lower limit of 85% to an upper limit of 99%, and wherein the content of tin oxide ranges from a lower limit of 1% to an upper limit. 15%, so that the contents of indium oxide and tin oxide are combined to be 100%. The component (100) as described in claim 5, 6 or 9 wherein the content of indium oxide ranges from a lower limit of 90% to an upper limit of 97%, and wherein the content of tin oxide ranges from a lower limit of 3% to an upper limit. 10%. The component (100) as described in claim 5, 6 or 9 wherein the content of indium oxide ranges from a lower limit of 93% to an upper limit of 95%, and wherein the content of tin oxide ranges from a lower limit of 5% to an upper limit. 7%. A deposition apparatus (200) for depositing material on a substrate, the deposition apparatus comprising: a chamber (210) for depositing material on the substrate (220) located therein; and a component (100) For depositing material on the substrate, the assembly comprising: a first cathode (110) comprising a first target material; at least a second cathode (120) comprising at least one second target material, the at least a second target material is different from the first target material; and a power supply (150) is provided to supply and control application to the first cathode (110) and the at least one second cathode (120) And a power source such that a ratio of a first sputter portion of the first target material and at least a second sputter portion of the at least one second target material can be adjusted. The deposition apparatus (200) of claim 12, wherein the assembly (100) is an assembly according to any one of claims 2 to 11. A method for depositing material on a substrate, the method comprising: applying a first power source (410) to a first cathode comprising a first target material by a power supply; applying a power from the power supply a second power source (420) to at least one second cathode comprising at least one second target material, the at least one second target material being different from the first target material; controlling (430) applying to the first cathode The first power source and the second power source controlled to the at least one second cathode to adjust a first sputtering portion of the first target material and at least a second sputtering of the at least one second target material a ratio of the plated portion; and depositing (440) the first sputter portion of the first target material and the at least one second sputter portion of the at least one second target material. The method of claim 14, wherein controlling (430) the first power source applied to the first cathode and controlling the second power source applied to the at least one second cathode comprises passing the first cathode and The period of the at least one second cathode is switched. The method of claim 14, wherein controlling (430) the first power source applied to the first cathode and controlling the second power source applied to the at least one second cathode comprises controlling the first cathode a first duty cycle and at least one second duty cycle for controlling the at least one second cathode. The method of claim 14, wherein controlling (430) the first power source applied to the first cathode and controlling the second power source applied to the at least one second cathode comprises controlling application to the first A frequency of a first power source of the cathode and a frequency of control applied to the at least one second power source of the at least one second cathode. The method of any one of clauses 14 to 17, wherein the first sputter portion of the first target material and the at least one second of the at least one second target material are deposited The sputtering portion includes: depositing one or more of the first target materials, wherein the first target material is selected from the group consisting of ITO, ZrO ₂ , TiW, Al ₂ O ₃ , ZnO, including indium oxide and tin oxide, a group consisting of TiO ₂ , SiO ₂ , Si ₃ N ₄ , SiN, TiN, Cr, Cr ₂ O ₃ , SnO ₂ and Ta ₂ O ₅ , wherein the content of indium oxide ranges from a lower limit of 85% to an upper limit of 99%. And wherein the content of tin oxide ranges from a lower limit of 1% to an upper limit of 15% such that the contents of indium oxide and tin oxide are combined to be 100%, and one or more of the at least one second target material are deposited, or The at least one second target material is selected from the group consisting of ITO, ZrO ₂ , TiW, Al ₂ O ₃ , ZnO, TiO ₂ , SiO ₂ , Si ₃ N ₄ , SiN, TiN, Cr, Cr comprising indium oxide and tin oxide. ₂ O _3, SnO ₂ and the group consisting of Ta ₂ O _5, wherein the content of indium oxide-based content in the range from a lower limit to an upper limit of 85% to 99%, and wherein the tin oxide Tied around the lower limit of the upper limit of 1 to 15%, so that the content of tin oxide and indium oxide together 100%. The method of claim 18, wherein the content of indium oxide ranges from a lower limit of 90% to an upper limit of 97%, and wherein the content of tin oxide ranges from a lower limit of 3% to an upper limit of 10%. The method of claim 18, wherein the content of indium oxide ranges from a lower limit of 93% to an upper limit of 95%, and wherein the content of tin oxide ranges from a lower limit of 5% to an upper limit of 7%.