KR20190132667A - Film Forming Apparatus and Film Forming Method - Google Patents

Abstract

The layer composition on a board | substrate is simply changed by the sputtering method. The film forming apparatus includes a vacuum container, a substrate conveying mechanism, a film forming source, and a control unit. The vacuum vessel can maintain a reduced pressure. The substrate conveyance mechanism can convey a substrate in the vacuum vessel. The film forming source has a first target and a second target disposed along the conveying direction of the substrate, facing the substrate. The material of the first target is different from the material of the second target. A layer is generated between the first target and the second target by applying an alternating current voltage having a long wave band and mixing the material of the first target and the material of the second target on the substrate. It is possible to form The controller can change the duty ratio of the AC voltage.

Description

Film Forming Apparatus and Film Forming Method

The present invention relates to a film forming apparatus and a film forming method.

Transparent conductive layers, such as an indium tin oxide (ITO) layer, are used for electronic devices, such as a display, a solar cell, and a touch panel (for example, refer patent document 1). As a film formation method of a transparent conductive layer, there exist a chemical manufacturing method represented by the CVD (Chemical Vapor Deposition) method, and the physical manufacturing method represented by the sputtering method.

For example, the CVD method may be difficult to apply to a substrate having low heat resistance, and the exhaust gas treatment may take effort and time. On the other hand, the sputtering method can be applied to a substrate having low heat resistance, and its composition can be optimally adjusted by introducing oxygen into the vacuum vessel. In addition, the sputtering method can be applied to a large substrate. For this reason, when forming a transparent conductive layer in the said electronic device, the sputtering method is employ | adopted in many cases. And in a transparent conductive layer, the composition change may be calculated | required according to the use of an electronic device.

Japanese Patent No. 5855948

However, when the sputtering method is adopted, the composition of the target material is fixed. For this reason, the composition of the layer formed on a board | substrate cannot be changed easily. In order to change the composition of this layer, it is necessary to prepare the target material corresponding to each layer composition individually.

In view of the above circumstances, an object of the present invention is to provide a film forming apparatus and a film forming method which can easily change the composition of a layer when forming a layer on a substrate by a sputtering method.

MEANS TO SOLVE THE PROBLEM In order to achieve the said objective, the film forming apparatus which concerns on one form in this invention is equipped with a vacuum container, a board | substrate conveyance mechanism, a film formation source, and a control part. The vacuum container can maintain a reduced pressure. The said substrate conveyance mechanism can convey a board | substrate in the said vacuum container. The film forming source has a first target and a second target disposed along the conveying direction of the substrate, facing the substrate. The material of the first target is different from the material of the second target. The plasma is generated by applying an alternating current voltage having a long wave band between the first target and the second target, and a layer in which the material of the first target and the material of the second target are mixed on the substrate. It is possible to form The controller can change the duty ratio of the AC voltage.

In such a film forming apparatus, an AC voltage applied between the first target and the second target, wherein a frequency of the material of the first target in the layer depends on changing the duty ratio of the AC voltage in a long wave band. And the mixing ratio of the material of the second target can be easily changed.

In the film forming apparatus, the resistivity of the first target may be different from that of the second target.

With such a film forming apparatus, the mixing ratio of the first target and the second target having different resistivity in the layer can be easily changed.

In the film forming apparatus, the sputtering rate of the first target may be different from the sputtering rate of the second target.

With such a film forming apparatus, in the layer, even if the sputtering ratio of each of the first target and the second target is different, the layer including the first target and the second target completely includes changing the duty ratio. Can be formed.

In the film forming apparatus, the frequency may be 10 kHz or more and 100 kHz or less.

In such a film forming apparatus, the material of the first target and the material of the second target in the layer by applying the AC voltage in the frequency band of 10 kHz or more and 100 kHz or less is applied between the first target and the second target. You can change the mixing ratio with.

In the film forming apparatus, each of the first target and the second target may be formed in a cylindrical shape, and each central axis of the first target and the second target may intersect with respect to the conveyance direction of the substrate. In addition, each of the first target and the second target may be configured to be rotatable about each of the central axes.

With such a film forming apparatus, even if the substrate is large, the mixing ratio between the material of the first target and the material of the second target in the in-plane direction of the substrate becomes more uniform.

In the film forming apparatus, the film forming source may further include a first magnetic circuit disposed inside the first target and a second magnetic circuit disposed inside the second target. The direction in which the first magnetic circuit faces the first target and the direction in which the second magnetic circuit faces the second target may be configured to be variable.

In such a film forming apparatus, by the magnetic circuit, the position of the plasma to be supplemented in the vicinity of each of the targets is varied, and the direction of sputter particles emitted from each of the targets can be changed.

In order to achieve the above object, the film forming method according to one embodiment of the present invention opposes a first target and a second target having a material different from that of the first target to the substrate, and along the conveyance direction of the substrate. And arranging a first target and the second target. While conveying the substrate in the conveyance direction in a reduced pressure atmosphere, an alternating current voltage is applied between the first target and the second target as a long wave band and the duty ratio can be changed, and the first target and the first target are applied. Plasma is generated between the two targets. The layer which mixed the material of the said 1st target and the material of the said 2nd target is formed in the said board | substrate.

In such a film forming method, the material of the first target in the layer as an alternating voltage applied between the first target and the second target, wherein the frequency changes the duty ratio of the alternating voltage in the long wave band. And the mixing ratio of the material of the second target with can be freely changed. This makes it possible to simply change the composition of the layer formed on the substrate.

In the film forming method, the resistivity of the first target may be different from that of the second target.

With such a film forming method, the mixing ratio of the first target and the second target having different resistivity in the layer can be easily changed.

In the film forming method, the sputtering rate of the first target may be different from the sputtering rate of the second target.

In such a film forming method, in the layer, a layer including the first target and the second target completely by changing the duty ratio even if the sputtering rates of the first target and the second target are different. Can be formed.

In the film forming method, the frequency may be 10 kHz or more and 100 kHz or less.

In such a film forming method, the material of the first target and the material of the second target in the layer by applying the AC voltage in the frequency band of 10 kHz or more and 100 kHz or less is applied between the first target and the second target. You can change the mixing ratio with.

In the film formation method described above, each of the first target and the second target is configured in a cylindrical shape, and the central axes of the first target and the second target are crossed with respect to the transport direction of the substrate, and the first target The plasma may be generated between the first target and the second target while rotating each of the target and the second target about the central axis.

In such a film forming method, even if the substrate is large, the mixing ratio of the material of the first target and the material of the second target in the in-plane direction of the substrate becomes more uniform.

In the film forming method, a first magnetic circuit is disposed inside the first target, a second magnetic circuit is disposed inside the second target, and the first magnetic circuit faces the first target. And a direction in which the second magnetic circuit faces the second target, and generates the plasma between the first target and the second target.

According to such a film forming method, the position of the plasma supplemented in the vicinity of each target is changed by the magnetic circuit, and the direction of sputter particles emitted from each of the targets can be changed.

In the film forming method described above, when the sputtering rate of each of the first target and the second target is different, the AC voltage can be applied to the target having the low sputtering rate for a longer time.

According to such a film forming method, a layer in which each of the material of the first target and the material of the second target is mixed without leaving can be formed on the substrate.

As described above, according to the present invention, there is provided a film forming apparatus and a film forming method which can easily change the composition of a layer formed on a substrate by a sputtering method.

1 is a schematic cross-sectional view of a film forming apparatus according to a first embodiment.
Fig. 2 is a top view showing the arrangement of the target and the substrate of the film forming apparatus according to the first embodiment.
3 is a schematic flow of a film forming method according to the first embodiment.
4 (a) is a schematic cross-sectional view showing the operation of the film forming apparatus according to the first embodiment, and (b) and (c) show the temporal change of the square wave AC voltage applied to the first target and the second target. One schematic.
Fig. 5 is a graph showing the relationship between the duty ratio of the square wave AC voltage and the sheet resistance of the layer.
6 is a schematic cross-sectional view showing another operation of the film forming apparatus according to the first embodiment.
7 is a schematic cross-sectional view of the film forming apparatus according to the second embodiment.
8 is a schematic cross-sectional view of the film forming apparatus according to the third embodiment.
9 is a schematic top view of a film forming apparatus according to the fourth embodiment.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described, referring drawings. In each drawing, XYZ axis coordinates may be introduced.

[First Embodiment]

1 is a schematic cross-sectional view of a film forming apparatus according to a first embodiment.

Fig. 2 is a top view showing the arrangement of the target and the substrate of the film forming apparatus according to the first embodiment.

The film forming apparatus 101 shown in FIGS. 1 and 2 includes a vacuum vessel 10, a substrate conveying mechanism 20, a film forming source 30, an AC power supply 50, a control unit 60, and a gas. A source 70.

The vacuum container 10 is a container capable of maintaining a reduced pressure state. For example, the gas in the vacuum vessel 10 is exhausted to the outside by an exhaust mechanism such as a turbo molecular pump through the exhaust port 10d. The film forming apparatus 101 may be a batch film forming apparatus or may be a continuous film forming apparatus.

When the film forming apparatus 101 is a continuous (for example, in-line) film forming apparatus, the vacuum vessel 10 functions as one processing chamber in the film forming apparatus 101. For example, the vacuum container 10 is provided with a board | substrate carrying-in part 10a and the board | substrate carrying out part 10b. When the substrate 21A is loaded into the vacuum vessel 10 from the substrate loading portion 10a, a process such as sputtering film formation is performed on the substrate 21A in the vacuum vessel 10, and then the substrate 21A is formed. The silver is carried out of the vacuum container 10 through the substrate carrying out portion 10b. The substrate 21A includes, for example, a glass substrate having a rectangular planar shape. In the example of FIG. 1, the surface on which the substrate 21A faces the film formation source 30 is the film formation surface 21d.

The board | substrate conveyance mechanism 20 can convey the board | substrate 21A in the vacuum container 10. FIG. For example, the board | substrate conveyance mechanism 20 has the roller rotating mechanism 20r and the frame part 20f. The roller rotating mechanism 20r is supported by the frame part 20f. And when the board | substrate 21A and the board | substrate holder 22 are raised on the roller rotation mechanism 20r, the board | substrate holder which supports the board | substrate 21A and the board | substrate 21A by rotating the roller rotation mechanism 20r will rotate. 22 slides toward the board | substrate carrying out part 10b from the board | substrate carrying-in part 10a.

The film forming source 30 has a first film forming source 31 and a second film forming source 32. The first film formation source 31 has a first target 31T, a first backing tube 31B, and a first magnetic circuit 31M. The second film formation source 32 has a second target 32T, a second backing tube 32B, and a second magnetic circuit 32M. The film forming apparatus 101 is a film forming apparatus having a so-called dual target.

The first target 31T is supported by the first backing tube 31B. The first magnetic circuit 31M is disposed in the first target 31T and at the same time in the first backing tube 31B. The second target 32T is supported by the second backing tube 32B. The second magnetic circuit 32M is disposed in the second target 32T and in the second backing tube 32B. Each of the first backing tube 31B and the second backing tube 32B may be provided with a flow path (not shown) through which a cooling medium flows.

The first target 31T and the second target 32T face the substrate 21A. The 1st target 31T and the 2nd target 32T are arrange | positioned along the conveyance direction (Y-axis direction) of the board | substrate 21A. The central axis 31c of the first target 31T is parallel to the longitudinal direction of the first target 31T. The central axis 32c of the second target 32T is parallel to the longitudinal direction of the second target 32T.

Each of the first target 31T, the first backing tube 31B, the second target 32T, and the second backing tube 32B is cylindrical. However, each of the first target 31T, the first backing tube 31B, the second target 32T, and the second backing tube 32B is not limited to a cylindrical shape, and may be a disk.

The center axis 31c of the first target 31T intersects with the conveyance direction of the substrate 21A. The central axis 32c of the second target 32T intersects with respect to the conveyance direction of the substrate 21A. For example, each of the central axes 31c and 32c is orthogonal to the Y-axis direction and extends in the X-axis direction. The first target 31T is configured to be rotatable about the central axis 31c. The second target 32T is configured to be rotatable about the central axis 32c. That is, the 1st target 31T and the 2nd target 32T are what is called a rotary target.

In the film forming apparatus 101, the material of the first target 31T is different from the material of the second target 32T. For example, the resistivity of the first target 31T is different from that of the second target 32T. Alternatively, the sputtering rate of the first target 31T is different from the sputtering rate of the second target 32T. A protective plate 11 is provided between the substrate transfer mechanism 20 and the film formation source 30.

For example, the material of the first target 31T includes at least one of niobium oxide, tantalum oxide, titanium oxide, and molybdenum oxide. The material of the second target 32T includes at least one of ITO (indium tin oxide (tin oxide content 1 wt% to 15 wt%)), indium oxide, tin oxide, zinc oxide, and gallium oxide. However, tin oxide content in ITO is an example, It is not limited to this value.

In the film forming apparatus 101, the magnet D 31mg of the first magnetic circuit 31M faces the inner wall of the first target 31T from the inside of the first target 31T and the second magnetic field. The magnet 32mg of the circuit 32M is configured such that the direction D2 facing the second target 32T from the inside of the second target 32T is variable. For example, the first magnetic circuit 31M is configured to be rotatable about the central axis 31c, and the second magnetic circuit 32M is configured to be rotatable about the central axis 32c.

Thereby, the position of the magnetic force line (magnetic field formed along the surface of the first target 31T) leaking from the magnetic circuit 31M to the surface of the first target 31T is configured to be variable. The magnetic force line (magnetic field formed along the surface of the second target 32T) leaking from the magnetic circuit 32M to the surface of the second target 32T is configured to be variable.

In the film forming apparatus 101, when a discharge gas is introduced into the vacuum vessel 10 and an alternating voltage is applied between the first target 31T and the second target 32T, the first target 31T and the second target 32T. The discharge gas is ionized between the target 32T, and a plasma is generated between the first target 31T and the second target 32T. Here, the frequency of the AC voltage is a long wave (LF) band. The long wave band according to the present embodiment also includes an ultra long wave band. The frequency of the AC voltage is more preferably 10 kHz or more and 100 kHz or less.

Sputtering particles emitted from the first target 31T and the second target 32T reach the film forming surface 21d of the substrate 21A. As a result, a layer in which the sputtered particles S1 sputtered from the first target 31T and the sputtered particles S2 sputtered from the second target 32T is formed is formed on the film forming surface 21d.

The AC power supply 50 supplies an AC voltage between the first target 31T and the second target 32T. The AC voltage supplied by the AC power supply 50 is a square wave AC voltage, for example. This square wave AC voltage is not limited to the ideal square wave AC voltage, for example. For example, at a square wave alternating voltage, the rise or fall of the pulse may not be perpendicular to the time axis.

The controller 60 may modulate the duty ratio of the square wave AC voltage. For example, the controller 60 sets the length of the pulse voltage (negative voltage) applied to the first target 31T to be shorter than the length of the pulse voltage (minus voltage) applied to the second target 32T, or The length of the pulse voltage (negative voltage) applied to the first target 31T can be set longer than the length of the pulse voltage (negative voltage) applied to the second target 32T.

The gas supply source 70 has a flow rate regulator 71 and a gas nozzle 72. The discharge gas is supplied into the vacuum vessel 10 by the gas supply source 70. The discharge gas is, for example, rare gas such as argon or helium, oxygen or the like. The operation of the film forming apparatus 101 will be described below.

3 is a schematic flow of a film forming method according to the first embodiment.

In the film forming method according to the present embodiment, the first target 31T and the second target 32T are opposed to the substrate 21A, and the first target 31T and the second target are along the conveyance direction of the substrate 21A. The target 32T is disposed (S10).

Next, while conveying the substrate 21A in the conveyance direction in a reduced pressure atmosphere, an alternating current voltage is applied between the first target 31T and the second target 32T in which the frequency is a long wave band and the duty ratio can be changed. By doing so, plasma is generated between the first target 31T and the second target 32T (S20).

Next, a layer in which the material of the first target 31T and the material of the second target 32T are mixed is formed on the substrate 21A (S30).

4 (a) is a schematic cross-sectional view showing the operation of the film forming apparatus according to the first embodiment, and FIGS. 4 (b) and 4 (c) are temporal changes of the square wave AC voltage applied to the first target and the second target. It is a schematic diagram showing. Here, the horizontal axis is time and the vertical axis is voltage. In FIG. 4A, the vacuum vessel 10 illustrated in FIG. 1, the substrate transfer mechanism 20, the AC power supply 50, the control unit 60, the gas supply source 70, and the like are abbreviated.

When the discharge gas is introduced into the vacuum vessel 10 and an alternating voltage is applied between the first target 31T and the second target 32T, the discharge gas is discharged between the first target 31T and the second target 32T. Is ionized. At the time of discharge, the 1st target 31T and the 2nd target 32T are rotating in the direction of an arrow.

In the film forming apparatus 101, a square wave AC voltage is applied between the first target 31T and the second target 32T. Therefore, when the + Vs voltage is applied to the first target 31T, the -Vs voltage is applied to the second target 32T, and the -Vs voltage is applied to the first target 31T. The + Vs voltage is applied to the two targets 32T (Fig. 4 (b)). Here, "t" in Figs. 4B and 4C is a voltage cycle of a square wave AC voltage. "T1" is time when -Vs is applied to the first target 31T. "T2" is time when -Vs is applied to the second target 32T. At the time of discharge, a voltage of + Vs × 2 is applied between the first target 31T and the second target 32T.

In the film formation source 30, when the -Vs voltage is applied to the first target 31T, the first target 31T is sputtered by the cation in the discharge gas, and the sputtered particles (from the first target 31T) S1) releases. On the other hand, when the -Vs voltage is applied to the second target 32T in the film formation source 30, the second target 32T is sputtered by the cation in the discharge gas, and the sputtering from the second target 32T is performed. Particles S2 are released.

Here, in the film forming apparatus 101, the direction D1 of the magnetic circuit 31M is bent from the Z-axis direction and tilted in the Y-axis direction. As a result, in the vicinity of the surface of the first target 31T, plasma is easily replenished between the Z-axis direction and the Y-axis direction, and the plasma density increases between the Z-axis direction and the Y-axis direction. Therefore, sputtering particles S1 are mainly emitted from the first target 31T between the Z-axis direction and the Y-axis direction, and the sputtering particles S1 scatter toward the substrate 21A.

On the other hand, in the film forming apparatus 101, the direction D2 of the magnetic circuit 32M is bent in the Z-axis direction and inclined in the opposite direction to the Y-axis direction (-Y-axis direction). As a result, in the vicinity of the surface of the second target 32T, plasma is easily replenished between the Z axis direction and the -Y axis direction, and the plasma density is increased between the Z axis direction and the -Y axis direction. Therefore, sputtering particles S2 are mainly emitted from the second target 32T between the Z-axis direction and the -Y-axis direction, and the sputtering particles S2 scatter toward the substrate 21A.

As a result, the sputtering particles S1 emitted from the first target 31T and the sputtering particles S2 emitted from the second target 32T are mixed below the film forming surface 21d to form a film forming surface ( At 21d), a layer in which the material of the first target 31T and the material of the second target 32T are mixed is formed. After the start of film formation, as an example, each material layer of sputtering particles S1 and S2 is formed by mixing on the substrate 21A, or each material layer is formed in an island shape.

Here, in the condition t1> t2 shown in FIG. 4B, the time when the -Vs voltage is applied to the first target 31T is greater than the time when the -Vs voltage is applied to the second target 32T. The side is long As a result, the amount of sputtered particles emitted from the first target 31T increases more than the amount of sputtered particles emitted from the second target 32T. As a result, a layer richer in the material of the first target 31T is formed on the film forming surface 21d than in the material of the second target 32T. In this case, the sputtering ratio of the first target 31T and the sputtering ratio of the second target 32T are said to be substantially the same.

On the other hand, in the condition t1 <t2 shown in FIG. 4C, the time when the -Vs voltage is applied to the second target 32T is greater than the time when the -Vs voltage is applied to the first target 31T. This is long. As a result, the amount of sputtered particles emitted from the second target 32T increases more than the amount of sputtered particles emitted from the first target 31T. As a result, a layer having a richer material of the second target 32T than the material of the first target 31T is formed on the film forming surface 21d.

Thus, according to the film forming apparatus 101, the square wave AC voltage is applied between the first target 31T and the second target 32T, and the duty ratio t1 / t or t2 / t of the square wave AC voltage is adjusted. By changing, the mixing ratio of the material of the 1st target 31T and the material of the 2nd target 32T can be changed, and the composition of the layer formed on the board | substrate 21A can be changed easily.

That is, in this embodiment, when forming the layer of a different composition on the board | substrate 21A by sputtering method, it is not necessary to prepare the target corresponding to each composition individually. That is, according to this embodiment, the composition of the layer formed on the board | substrate 21A can be easily changed using two targets from which a material differs.

In the film forming apparatus 101 according to the present embodiment, the film forming source 30 and the ground portion of the film forming apparatus 101 (vacuum container 10, protective plate 11, substrate conveying mechanism 20, etc.) A film is formed by discharging between the first target 31T and the second target 32T, instead of generating a discharge therebetween.

Some sputtering apparatuses apply a DC (Direct Current) voltage or RF (Radio Frequency) voltage to a target, discharge a plasma between a target and a ground part, and form a layer in a board | substrate. Some of these sputtering apparatuses arrange a plurality of targets.

Here, in the sputtering apparatus, the layer is formed not only on the substrate but also on the ground portion. Therefore, in the case where the target material is a high resistance material such as an insulator, if the high resistance layer is continuously deposited on the ground portion, the ground portion is covered with a thick high resistance layer, and a stable plasma discharge between the target and the ground portion is not maintained. There is this. For this reason, in the sputtering apparatus which discharges a plasma between a target and a ground part, the maintenance work which removes high resistance material from a ground part by opening a vacuum regularly is needed.

In contrast, in the film forming apparatus 101 according to the present embodiment, plasma discharge is generated between the first target 31T and the second target 32T. For this reason, even if a high resistance material continues to deposit on the anode portion, the plasma discharge in the film forming apparatus 101 continues for a long time. That is, the film forming apparatus 101 is excellent in mass productivity.

In the film forming apparatus 101, the frequency band of the square wave AC voltage is a long wave band, More preferably, it is set to 10 kHz or more and 100 kHz or less. By this, the composition of the layer formed on the substrate 21A can be appropriately changed.

For example, when the frequency of the square wave AC voltage is smaller than 10 kHz, the sputtering time of each of the first target 31T and the second target 32T becomes long, and the first target 31T is placed on the substrate 21A. It becomes easy to form the layer which the material layer of and the material layer of the 2nd target 32T alternately laminated | stacked.

On the other hand, when the frequency of the square wave AC voltage is larger than 100 kHz, the period t becomes too short, and the resolution of the duty ratio is lowered. Thereby, in film formation, sufficient voltage is not applied to either one of the 1st target 31T and the 2nd target 32T, and either one of the 1st target 31T and the 2nd target 32T is prevented. Material becomes difficult to be incorporated in the layer.

In the film forming apparatus 101, each of the first target 31T and the second target 32T is a rotary target, while transferring the substrate 21A in a direction (Y axis direction) in which two rotary targets line up. Film formation is performed. As a result, even if the substrate 21A is a large substrate, the mixing ratio of the material of the first target 32T and the material of the second target 32T in the in-plane direction of the substrate 21A becomes uniform.

In addition, in the film forming apparatus 101, when the sputtering rate of each of the first target 31T and the second target 32T is different, the -Vs voltage is applied to the target having a low sputtering rate for a longer time. A layer mixed with each of the material of the target 31T and the material of the second target 32T can be formed on the substrate 21A.

Fig. 5 is a graph showing the relationship between the duty ratio of the square wave AC voltage and the sheet resistance of the layer.

Film formation conditions are as follows.

First target 31T: niobium oxide target

Second target 32T: ITO target (5 wt% tin oxide)

Power: 1kW / m (1 target equivalent)

Film forming pressure: 0.4Pa

Frequency: 20 kHz

Thickness of film forming layer: 10 nm

Film formation temperature: room temperature

5 is the duty ratio (%). The duty ratio is represented by t2 / t as a percentage. 5 is the sheet resistance (? / Sq.) Of the layer. Here, the resistivity of niobium oxide is higher than that of the ITO target (5 wt% of tin oxide).

As shown in Fig. 5, as t2 / t (%) increases, the sheet resistance of the film forming layer decreases. That is, the result of FIG. 5 shows that by adjusting t2 / t (%), the ratio of the material of the first target 31T and the material of the second target 32T in the film forming layer is changed, This shows that the sheet resistance can be easily adjusted.

6 is a schematic cross-sectional view showing another operation of the film forming apparatus according to the first embodiment.

In the film forming apparatus 101, the first magnetic circuit 31M is configured to be rotatable about the central axis 31c. In addition, the second magnetic circuit 32M is configured to be rotatable about the central axis 32c. Thereby, in the film forming apparatus 101, the position of the plasma supplemented in the vicinity of the first target 31T can be freely changed by the magnetic circuit 31M, and the sputtering particles emitted from the first target 31T can be freely changed. You can change the direction freely. In addition, the magnetic circuit 32M can freely change the position of the plasma supplemented in the vicinity of the second target 32T, and freely change the advancing direction of the sputtered particles emitted from the second target 32T.

For example, in the example of FIG. 6, the magnet 32 mg of the 2nd magnetic circuit 32M opposes the 1st target 31T. In this state, when a square wave AC voltage is applied between the first target 31T and the second target 32T, the discharge gas is ionized between the first target 31T and the second target 32T.

Here, the magnet 32mg of the second magnetic circuit 32M faces the first target 31T. For this reason, in the vicinity of the surface of the 2nd target 32T, plasma becomes easy to be supplemented in the position which the 1st target 31T opposes the 2nd target 32T. Thereby, sputtering particle S2 is discharge | released from the 2nd target 32T toward the 1st target 31T.

On the other hand, in the first target 31T, the material of the second target 32T attached to the first target 31T is sputtered together with the material of the first target 31T. As a result, sputtering particles S1 and S2 containing the material of the first target 31T and the material of the second target 32T are scattered from the first target 31T toward the substrate 21A. As a result, also in the structure of FIG. 6, the board | substrate 21A is provided with the layer which mixed the material of the 1st target 31T, and the material of 2nd target 32T.

The structure shown in FIG. 6 is applied to the example demonstrated below, for example.

For example, it is said that the oxide (MO _y ) of the present metal (M) is difficult to form a sintered body. Such oxide (MO _y ) is unlikely to be a target material. Therefore, for the oxide (MO _y) by using the sputtering method it becomes difficult to mixed in the layer.

In this case, in the structure shown in FIG. 6, the target of the oxide A is used as the first target 31T, and the target of the metal M is used as the second target 32T. In addition, oxygen is added to the discharge gas.

When discharge starts, sputtering particles of the metal M are released from the second target 32T, and the sputtering particles of the metal M adhere to the surface of the first target 31T. On the other hand, in the first target 31T, the metal M attached to the first target 31T is sputtered together with the oxide A of the first target 31T.

As a result, sputtering particles containing the oxide (A) and the metal (M) are released from the first target 31T, and these sputtering particles are scattered toward the substrate 21A. Here, oxygen is added to the discharge gas as an assist gas. For this reason, the sputtering particle | grains of the metal M turn into oxide particle MO _y , and eventually the layer which mixed oxide A and oxide MO _y is formed in the board | substrate 21A.

In particular, in the example of FIG. 6, the sputtered particles of the metal M are not directly discharged toward the substrate 21A, but the metal M is attached to the first target 31T once, and further the substrate therefrom. Eject toward 21A. For this reason, the path | pass until the sputtering particle | grains of the metal M make contact with the board | substrate 21A becomes longer, and the chance that the sputtering particle | grains of the metal M contact with oxygen increases. As a result, the sputtering particles of a metal (M) discharged from the second target (32T) can be mixed to the oxide (MO _y) (MO _y) easily, reliably oxide to the layer. Alternatively, the sputtering particles are released from the second target 32T to which the material of the first target 31T is adhered, so that the composition in the thickness direction of the layer formed on the film forming surface 21d is less likely to be uneven. do.

In addition, in this embodiment, the board | substrate conveyance mechanism which conveys a board | substrate and a board | substrate is not limited to said structure, For example, the following structures may be sufficient.

Second Embodiment

7 is a schematic cross-sectional view of the film forming apparatus according to the second embodiment. In FIG. 7, the vacuum container 10, the board | substrate conveyance mechanism 20, the AC power supply 50, the control part 60, the gas supply source 70, etc. which were illustrated in FIG.

The film forming apparatus 102 is a wound film forming apparatus. In the film forming apparatus 102, a long flexible substrate 21B cut to a predetermined width is used as the substrate. The flexible substrate 21B is, for example, a polyimide film or the like. The film forming apparatus 102 includes a substrate transfer mechanism 23. The board | substrate conveyance mechanism 23 is equipped with the main roller 23A, the guide roller 23B, and the guide roller 23C. The conveyance mechanism 23 is a film traveling mechanism. The main roller 23A faces the film forming source 30. The flexible substrate 21B is disposed between the main roller 23A and the film forming source 30.

In the film forming apparatus 102, the back surface (the surface opposite to the film forming surface 21d) of the flexible substrate 21B is in contact with the roller surface of the main roller 23A. The film forming surface 21d of the flexible substrate 21B faces the film forming source 30. The flexible substrate 21B continuously runs in the direction of the arrow G by the rotation of the main roller 23A, the guide roller 23B, and the guide roller 23C.

In the film forming apparatus 102, when a square wave AC voltage is applied between the first target 31T and the second target 32T, the sputtering particles S1 are emitted from the first target 31T, and the second target 32T. Sputtered particles (S2) are released from. As a result, while the flexible substrate 21B is driven by the substrate transfer mechanism 23, the material of the first target 31T and the second target 32T are formed on the film forming surface 21d of the flexible substrate 21B. A layer of mixed materials of) is formed.

The sputtering film formation of the film forming apparatus 102 with the substrate transfer mechanism 23 also functions in the same manner as the film forming apparatus 101.

[Third Embodiment]

8 is a schematic cross-sectional view of the film forming apparatus according to the third embodiment. In FIG. 8, the vacuum container 10 illustrated in FIG. 1, the board | substrate conveyance mechanism 20, the AC power supply 50, the control part 60, the gas supply source 70, etc. are abbreviate | omitted.

In the film forming apparatus 103, the substrate 21C which is smaller than the substrate 21A is used as the substrate. The planar shape of the substrate 21C is rectangular or circular. The substrate 21C is, for example, a glass substrate, a semiconductor substrate, or the like. In the film forming apparatus 103, the upper and lower positions of the film forming source 30 and the substrate transfer mechanism 24 may be reversed. The Z axis direction may be perpendicular to the ground, and the X axis direction may be perpendicular to the ground.

The film forming apparatus 103 is provided with a substrate rotating conveyance mechanism. The board | substrate conveyance mechanism 24 is a rotation stage which rotates the center axis | shaft 24c about an axis. The substrate conveyance mechanism 24 opposes the film formation source 30. The board | substrate conveyance mechanism 24 supports 21 C of several board | substrates at an outer periphery. The substrate 21C may be arranged in plural in the X-axis direction. The plurality of substrates 21C rotate in the rotational direction R direction by the rotation of the substrate transfer mechanism 24. The first target 31T and the second target 32T line up in the rotational direction of the substrate transfer mechanism 24. Each of the center axis 24c of the board | substrate conveyance mechanism 24, the center axis 31c of the 1st target 31T, and the center axis 32c of the 2nd target 32T is parallel.

Also in the film forming apparatus 103, when a square wave AC voltage is applied between the first target 31T and the second target 32T, sputtering particles S1 are emitted from the first target 31T, and the second target ( Sputtering particles S2 are released from 32T). As a result, while the substrate 21C is rotated by the substrate transfer mechanism 24, the material of the first target 31T and the material of the second target 32T are formed on the film forming surface 21d of the substrate 21C. Mixed layers are formed.

The sputtering film formation of the film forming apparatus 103 provided with the substrate transfer mechanism 24 also functions in the same manner as the film forming apparatus 101.

Fourth Embodiment

9 is a schematic top view of a film forming apparatus according to the fourth embodiment. In FIG. 9, the vacuum container 10, the board | substrate conveyance mechanism 20, the AC power supply 50, the control part 60, the gas supply source 70, etc. which were illustrated in FIG. In the film forming apparatus 104, the upper and lower positions of the film forming source 30 and the substrate transfer mechanism 25 may be reversed.

The film formation apparatus 104 is equipped with the conveyance mechanism of the board | substrate rotation. The board | substrate conveyance mechanism 25 is a rotation stage which rotates the central axis 25c about an axis. The substrate conveyance mechanism 25 opposes the film formation source 30. The board | substrate conveyance mechanism 25 supports 21 C of several board | substrates on an upper surface side. The substrate 21C may be arranged in plural in the X-axis direction. In the example of FIG. 9, the plurality of substrates 21C are disposed radially.

The plurality of substrates 21C rotate in the rotational direction R by the rotation of the substrate transfer mechanism 25. The first target 31T and the second target 32T line up in the rotational direction of the substrate transfer mechanism 25. The center axis 25c of the board | substrate conveyance mechanism 25 is orthogonal to each of the center axis 31c of the 1st target 31T, and the center axis 32c of the 2nd target 32T.

In the film forming apparatus 104, when a square wave AC voltage is applied between the first target 31T and the second target 32T, the sputtering particles S1 are emitted from the first target 31T, and the second target 32T. Sputtered particles (S2) are released from. As a result, while the substrate 21C is rotated by the substrate transfer mechanism 25, the material of the first target 31T and the material of the second target 32T are formed on the film forming surface 21d of the substrate 21C. Mixed layers are formed.

The sputtering film formation of the film forming apparatus 104 with the substrate transfer mechanism 25 also has the same function as the film forming apparatus 101.

As mentioned above, although embodiment of this invention was described, this invention is not limited only to embodiment mentioned above, Of course, it can change in various ways.

10: vacuum container
10a: board loading part
10b: substrate carrying out portion
10d: vent
11: shroud
20, 23, 24, 25: substrate conveyance mechanism
20f: frame portion
20r: roller rotating mechanism
21A, 21B, 21C: Board
21d: film-forming surface
22: substrate holder
24c, 25c, 31c, 32c: central axis
30: film formation source
31: first film forming source
31T: first target
31B: first backing tube
31M: first magnetic circuit
31mg: magnet
32: second film forming source
32T: second target
32B: second backing tube
32M: second magnetic circuit
32mg: magnet
50: AC power
60: control unit
70: gas source
71: flow regulator
72: gas nozzle
101, 102, 103, 104: film forming apparatus
S1, S2: Sputtering Particles

Claims (13)

A vacuum container capable of maintaining a reduced pressure state,
A substrate conveyance mechanism capable of conveying a substrate in the vacuum container;
It has a 1st target and a 2nd target which are arrange | positioned along the conveyance direction of the said board | substrate facing the said board | substrate, The material of the said 1st target differs from the material of the said 2nd target, and between the said 1st target and the said 2nd target A film-forming source capable of generating a plasma by applying an alternating-current voltage having a long frequency band to the substrate, and forming a layer in which the material of the first target and the material of the second target are mixed on the substrate;
And a control unit capable of changing the duty ratio of the AC voltage. According to claim 1,
The resistivity of the first target is different from the resistivity of the second target. According to claim 1,
The sputtering rate of the first target is different from the sputtering rate of the second target. The method according to any one of claims 1 to 3,
And said frequency is at least 10 kHz and less than 100 kHz. The method according to any one of claims 1 to 4,
Each of the first target and the second target is configured in a cylindrical shape,
The central axis of each of the first target and the second target intersects with respect to the conveying direction of the substrate,
Each of the first target and the second target is configured to be rotatable about an axis of each of the central axes. The method according to any one of claims 1 to 5,
The film forming source further has a first magnetic circuit disposed inside the first target and a second magnetic circuit disposed inside the second target,
And the direction in which the first magnetic circuit faces the first target and the direction in which the second magnetic circuit faces the second target are variable. A first target and a second target different from the first target and the material are opposed to the substrate, and the first target and the second target are disposed along the conveyance direction of the substrate,
While conveying the substrate in the conveyance direction in a reduced pressure atmosphere, the first target and the second target are applied between the first target and the second target by applying an AC voltage capable of changing the duty ratio as a long wave band. Generate a plasma between the second targets,
And forming a layer in which the material of the first target and the material of the second target are mixed on the substrate. The method of claim 7, wherein
The resistivity of the first target is different from the resistivity of the second target. The method of claim 7, wherein
The sputtering rate of the first target is different from the sputtering rate of the second target. The method according to any one of claims 7 to 9,
The frequency is a film forming method of 10kHz or more and 100kHz or less. The method according to any one of claims 7 to 10,
Each of the first target and the second target is configured in a cylindrical shape,
The center axis of each of the first target and the second target is crossed with respect to the conveyance direction of the substrate,
And generating the plasma between the first target and the second target while rotating each of the first target and the second target about an axis of the central axis. The method according to any one of claims 7 to 11,
Disposing a first magnetic circuit inside the first target, and disposing a second magnetic circuit inside the second target,
A film for generating the plasma between the first target and the second target by changing a direction in which the first magnetic circuit faces the first target and a direction in which the second magnetic circuit faces the second target. Forming method. The method according to any one of claims 9 to 12,
And applying the alternating current voltage to a target having a low sputtering rate for a longer time when the sputtering rate of each of the first target and the second target is different.

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