TW201614092A - Selective deposition with alcohol selective reduction and protection - Google Patents

Selective deposition with alcohol selective reduction and protection

Info

Publication number
TW201614092A
TW201614092A TW104126724A TW104126724A TW201614092A TW 201614092 A TW201614092 A TW 201614092A TW 104126724 A TW104126724 A TW 104126724A TW 104126724 A TW104126724 A TW 104126724A TW 201614092 A TW201614092 A TW 201614092A
Authority
TW
Taiwan
Prior art keywords
selective
protection
alcohol
deposition
metal
Prior art date
Application number
TW104126724A
Other languages
English (en)
Inventor
Feng Q Liu
Paul F Ma
Hua Ai
Jiang Lu
Mei Chang
David Thompson
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201614092A publication Critical patent/TW201614092A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76883—Post-treatment or after-treatment of the conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
TW104126724A 2014-08-27 2015-08-17 Selective deposition with alcohol selective reduction and protection TW201614092A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/469,980 US20160064275A1 (en) 2014-08-27 2014-08-27 Selective Deposition With Alcohol Selective Reduction And Protection

Publications (1)

Publication Number Publication Date
TW201614092A true TW201614092A (en) 2016-04-16

Family

ID=55400478

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104126724A TW201614092A (en) 2014-08-27 2015-08-17 Selective deposition with alcohol selective reduction and protection

Country Status (8)

Country Link
US (1) US20160064275A1 (zh)
EP (1) EP3186822B1 (zh)
JP (1) JP7096666B2 (zh)
KR (1) KR102403684B1 (zh)
CN (1) CN106663614B (zh)
SG (1) SG11201700766QA (zh)
TW (1) TW201614092A (zh)
WO (1) WO2016033145A1 (zh)

Cited By (3)

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TWI700750B (zh) * 2017-01-24 2020-08-01 美商應用材料股份有限公司 用於介電薄膜的選擇性沉積之方法及設備
TWI739984B (zh) * 2017-01-31 2021-09-21 美商應用材料股份有限公司 就圖案化應用進行選擇性沉積之方案
TWI807006B (zh) * 2018-04-05 2023-07-01 美商應用材料股份有限公司 金屬氧化物之低溫原子層沉積的方法

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CN107614508B (zh) * 2015-04-30 2021-04-27 海星化学制品有限公司 用于化学相沉积的有机金属化合物
US10043656B1 (en) * 2017-03-10 2018-08-07 Lam Research Corporation Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide
US10985014B2 (en) 2017-07-23 2021-04-20 Applied Materials, Inc. Methods for selective deposition on silicon-based dielectrics
TWI772516B (zh) * 2017-09-12 2022-08-01 美商應用材料股份有限公司 藉由化學蝕刻去除選擇性沉積缺陷
US10763104B2 (en) * 2017-09-28 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming differential etch stop layer using directional plasma to activate surface on device structure
US10847363B2 (en) 2017-11-20 2020-11-24 Tokyo Electron Limited Method of selective deposition for forming fully self-aligned vias
US10460930B2 (en) * 2017-11-22 2019-10-29 Lam Research Corporation Selective growth of SiO2 on dielectric surfaces in the presence of copper
US10727118B2 (en) 2017-11-30 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor device and pre-clean apparatus for semiconductor device
TWI790320B (zh) * 2017-12-16 2023-01-21 美商應用材料股份有限公司 釕的選擇性原子層沉積
WO2019200234A1 (en) * 2018-04-13 2019-10-17 Applied Materials, Inc. Methods of selective atomic layer deposition
KR102582496B1 (ko) * 2018-05-28 2023-09-26 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
US10943818B2 (en) 2018-10-31 2021-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
JP6860605B2 (ja) * 2019-03-18 2021-04-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP7345787B2 (ja) * 2020-04-30 2023-09-19 東京エレクトロン株式会社 選択成膜方法
US11515154B2 (en) * 2020-10-27 2022-11-29 Applied Materials, Inc. Selective deposition of a passivation film
US11756790B2 (en) 2021-03-09 2023-09-12 Tokyo Electron Limited Method for patterning a dielectric layer
JP2023050573A (ja) * 2021-09-30 2023-04-11 東京エレクトロン株式会社 成膜方法及び成膜装置
WO2023157619A1 (ja) * 2022-02-18 2023-08-24 富士フイルム株式会社 薬液、修飾基板の製造方法、積層体の製造方法
US20240145232A1 (en) * 2022-10-28 2024-05-02 Applied Materials, Inc. Benzyl compound passivation for selective deposition and selective etch protection

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US2415389A (en) * 1944-05-31 1947-02-04 Dow Chemical Co Alkoxy end-blocked siloxanes and method of making same
US6391785B1 (en) * 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6482740B2 (en) * 2000-05-15 2002-11-19 Asm Microchemistry Oy Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH
US6878628B2 (en) * 2000-05-15 2005-04-12 Asm International Nv In situ reduction of copper oxide prior to silicon carbide deposition
US7491634B2 (en) * 2006-04-28 2009-02-17 Asm International N.V. Methods for forming roughened surfaces and applications thereof
US20060199399A1 (en) * 2005-02-22 2006-09-07 Muscat Anthony J Surface manipulation and selective deposition processes using adsorbed halogen atoms
EP1961042A2 (en) * 2005-12-07 2008-08-27 Nxp B.V. A method of forming a layer over a surface of a first material embedded in a second material in a structure for a semiconductor device
WO2007147020A2 (en) * 2006-06-15 2007-12-21 Advanced Technology Materials, Inc. Cobalt precursors useful for forming cobalt-containing films on substrates
US20090269507A1 (en) * 2008-04-29 2009-10-29 Sang-Ho Yu Selective cobalt deposition on copper surfaces
US8242019B2 (en) * 2009-03-31 2012-08-14 Tokyo Electron Limited Selective deposition of metal-containing cap layers for semiconductor devices
JP5507909B2 (ja) * 2009-07-14 2014-05-28 東京エレクトロン株式会社 成膜方法
US8211800B2 (en) * 2010-08-23 2012-07-03 Kabushiki Kaisha Toshiba Ru cap metal post cleaning method and cleaning chemical
US8778816B2 (en) * 2011-02-04 2014-07-15 Applied Materials, Inc. In situ vapor phase surface activation of SiO2
US8969197B2 (en) * 2012-05-18 2015-03-03 International Business Machines Corporation Copper interconnect structure and its formation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI700750B (zh) * 2017-01-24 2020-08-01 美商應用材料股份有限公司 用於介電薄膜的選擇性沉積之方法及設備
TWI739984B (zh) * 2017-01-31 2021-09-21 美商應用材料股份有限公司 就圖案化應用進行選擇性沉積之方案
TWI807006B (zh) * 2018-04-05 2023-07-01 美商應用材料股份有限公司 金屬氧化物之低溫原子層沉積的方法

Also Published As

Publication number Publication date
EP3186822A4 (en) 2018-05-02
CN106663614B (zh) 2021-03-16
EP3186822A1 (en) 2017-07-05
CN106663614A (zh) 2017-05-10
JP2017528597A (ja) 2017-09-28
JP7096666B2 (ja) 2022-07-06
WO2016033145A1 (en) 2016-03-03
KR20170046733A (ko) 2017-05-02
SG11201700766QA (en) 2017-03-30
KR102403684B1 (ko) 2022-05-27
EP3186822B1 (en) 2021-12-15
US20160064275A1 (en) 2016-03-03

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