TW201612973A - Method for etching - Google Patents

Method for etching

Info

Publication number
TW201612973A
TW201612973A TW104116481A TW104116481A TW201612973A TW 201612973 A TW201612973 A TW 201612973A TW 104116481 A TW104116481 A TW 104116481A TW 104116481 A TW104116481 A TW 104116481A TW 201612973 A TW201612973 A TW 201612973A
Authority
TW
Taiwan
Prior art keywords
silicon
gas
nitride film
silicon nitride
chamber
Prior art date
Application number
TW104116481A
Other languages
English (en)
Chinese (zh)
Inventor
Nobuhiro Takahashi
Tetsuro Takahashi
Akitaka Shimizu
Koichi Nagakura
Takeshi Saito
Shuichiro Uda
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201612973A publication Critical patent/TW201612973A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
TW104116481A 2014-06-02 2015-05-22 Method for etching TW201612973A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014113908A JP2015228433A (ja) 2014-06-02 2014-06-02 エッチング方法

Publications (1)

Publication Number Publication Date
TW201612973A true TW201612973A (en) 2016-04-01

Family

ID=54766539

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104116481A TW201612973A (en) 2014-06-02 2015-05-22 Method for etching

Country Status (3)

Country Link
JP (1) JP2015228433A (ja)
TW (1) TW201612973A (ja)
WO (1) WO2015186461A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI648785B (zh) * 2016-05-29 2019-01-21 東京威力科創股份有限公司 選擇性氮化矽蝕刻方法
TWI767085B (zh) * 2017-11-07 2022-06-11 日商東京威力科創股份有限公司 相對其他材料具選擇性之保形蝕刻方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6619703B2 (ja) * 2016-06-28 2019-12-11 株式会社Ｓｃｒｅｅｎホールディングス エッチング方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3292172B2 (ja) * 1999-03-31 2002-06-17 日本電気株式会社 半導体装置の製造方法
KR20110002017A (ko) * 2008-03-31 2011-01-06 제온 코포레이션 플라즈마 에칭 방법
JP5476152B2 (ja) * 2010-02-16 2014-04-23 積水化学工業株式会社 窒化シリコンのエッチング方法及び装置
US8999856B2 (en) * 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI648785B (zh) * 2016-05-29 2019-01-21 東京威力科創股份有限公司 選擇性氮化矽蝕刻方法
TWI767085B (zh) * 2017-11-07 2022-06-11 日商東京威力科創股份有限公司 相對其他材料具選擇性之保形蝕刻方法

Also Published As

Publication number Publication date
JP2015228433A (ja) 2015-12-17
WO2015186461A1 (ja) 2015-12-10

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