TW201612291A - Polishing agent composition for sapphire substrate - Google Patents

Polishing agent composition for sapphire substrate

Info

Publication number
TW201612291A
TW201612291A TW104130670A TW104130670A TW201612291A TW 201612291 A TW201612291 A TW 201612291A TW 104130670 A TW104130670 A TW 104130670A TW 104130670 A TW104130670 A TW 104130670A TW 201612291 A TW201612291 A TW 201612291A
Authority
TW
Taiwan
Prior art keywords
polishing
sapphire substrate
agent composition
oxoacid
polishing agent
Prior art date
Application number
TW104130670A
Other languages
Chinese (zh)
Other versions
TWI664278B (en
Inventor
Yoshinobu Yamaguchi
Kenji Naito
Sanaki Horimoto
Original Assignee
Yamaguchi Seiken Kogyo Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaguchi Seiken Kogyo Kk filed Critical Yamaguchi Seiken Kogyo Kk
Publication of TW201612291A publication Critical patent/TW201612291A/en
Application granted granted Critical
Publication of TWI664278B publication Critical patent/TWI664278B/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Provided is a polishing agent composition for a sapphire substrate with which a polishing surface devoid of surface defects such as scratches can be obtained with a high polishing speed and high polishing accuracy. The present invention contains as components inorganic polishing material particles, a polishing accelerator, and water. The inorganic polishing material particles are alumina particles, and the polishing accelerator is an oxoacid salt, the pH being 9.0-13.0. The oxoacid salt is an alkali metal salt or an alkaline-earth metal salt of an oxoacid of aluminum, silicon, or boron.
TW104130670A 2014-09-16 2015-09-16 Abrasive composition for sapphire substrate TWI664278B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014187564 2014-09-16
JP2014-187564 2014-09-16

Publications (2)

Publication Number Publication Date
TW201612291A true TW201612291A (en) 2016-04-01
TWI664278B TWI664278B (en) 2019-07-01

Family

ID=55533128

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104130670A TWI664278B (en) 2014-09-16 2015-09-16 Abrasive composition for sapphire substrate

Country Status (3)

Country Link
JP (1) JPWO2016043089A1 (en)
TW (1) TWI664278B (en)
WO (1) WO2016043089A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113817410A (en) * 2020-06-18 2021-12-21 福吉米株式会社 Concentrate of polishing composition and polishing method using same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10144850B2 (en) * 2015-09-25 2018-12-04 Versum Materials Us, Llc Stop-on silicon containing layer additive
JP6788988B2 (en) 2016-03-31 2020-11-25 株式会社フジミインコーポレーテッド Polishing composition
JP6096969B1 (en) * 2016-04-26 2017-03-15 株式会社フジミインコーポレーテッド Abrasive material, polishing composition, and polishing method
JP2020057476A (en) * 2018-09-28 2020-04-09 積水化学工業株式会社 Electrolyte layer, electrode composite, and lithium ion secondary battery

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2970833B2 (en) * 1994-09-12 1999-11-02 信越半導体株式会社 Polishing agent for polishing silicon wafer and polishing method
JP2004327952A (en) * 2003-03-03 2004-11-18 Fujimi Inc Polishing composition
JP2005205542A (en) * 2004-01-22 2005-08-04 Noritake Co Ltd Sapphire polishing grinding wheel and sapphire polishing method
US20070117497A1 (en) * 2005-11-22 2007-05-24 Cabot Microelectronics Corporation Friction reducing aid for CMP
ATE510899T1 (en) * 2006-08-30 2011-06-15 Saint Gobain Ceramics CONCENTRATED ABRASIVE SLUDGE COMPOSITIONS, METHOD FOR THE PRODUCTION THEREOF AND METHOD FOR THE USE THEREOF
CN102627915A (en) * 2012-03-23 2012-08-08 江苏中晶科技有限公司 Efficient alumina sapphire polishing solution and its preparation method
JP2014024157A (en) * 2012-07-26 2014-02-06 Fujimi Inc Abrasive composition, polishing method of crustaceous material, and manufacturing method of crustaceous material substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113817410A (en) * 2020-06-18 2021-12-21 福吉米株式会社 Concentrate of polishing composition and polishing method using same
CN113817410B (en) * 2020-06-18 2024-05-10 福吉米株式会社 Concentrate of polishing composition and polishing method using same

Also Published As

Publication number Publication date
JPWO2016043089A1 (en) 2017-08-10
TWI664278B (en) 2019-07-01
WO2016043089A1 (en) 2016-03-24

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees