JP2970833B2 - Polishing agent for polishing silicon wafer and polishing method - Google Patents
Polishing agent for polishing silicon wafer and polishing methodInfo
- Publication number
- JP2970833B2 JP2970833B2 JP6217393A JP21739394A JP2970833B2 JP 2970833 B2 JP2970833 B2 JP 2970833B2 JP 6217393 A JP6217393 A JP 6217393A JP 21739394 A JP21739394 A JP 21739394A JP 2970833 B2 JP2970833 B2 JP 2970833B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- wafer
- silicon wafer
- abrasive
- agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Mechanical Treatment Of Semiconductor (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、シリコンウェーハ（以
下単にウェーハということがある）研磨用研磨剤及びウ
ェーハの研磨方法の改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an abrasive for polishing a silicon wafer (hereinafter sometimes simply referred to as "wafer") and an improvement in a method of polishing a wafer.
【０００２】[0002]
【関連技術】一般に、シリコンウェーハ研磨用研磨剤に
対する添加物としてアミノアルコール（エタノールアミ
ン）類を添加すると研磨能率が向上することが知られて
いる。しかし、アミノアルコール類を添加した研磨剤を
用いるとウェーハの表面の粗さが悪化するという問題が
あった。2. Related Art It is generally known that the addition of an amino alcohol (ethanolamine) as an additive to a polishing agent for silicon wafer polishing improves polishing efficiency. However, there is a problem that the use of a polishing agent to which amino alcohols are added deteriorates the surface roughness of the wafer.
【０００３】[0003]
【発明が解決しようとする課題】研磨加工後のウェーハ
表面は活性なシリコン表面が露呈しており、研磨剤等の
残留アリカリによって容易にエッチングされ、表面粗さ
が悪化する。そこで、本発明者は、シリコン表面に容易
に吸着することによって、研磨後の残留アルカリからウ
ェーハ表面を保護し、かつ研磨促進作用をもつ添加物を
種々検討した結果、アルミン酸ナトリウムが有効である
ことを見出し本発明に到達した。The active silicon surface is exposed on the wafer surface after the polishing, and the wafer surface is easily etched by residual alkali such as an abrasive, and the surface roughness is deteriorated. Therefore, the present inventors have studied various additives having a polishing promoting effect by protecting the wafer surface from residual alkali after polishing by easily adsorbing on the silicon surface, and found that sodium aluminate is effective. The inventors have found that the present invention has been achieved.
【０００４】本発明は、表面粗さを悪化させることな
く、研磨能率を向上させることを可能としたシリコンウ
ェーハ研磨用研磨剤を提供し、かつこの新規な研磨剤を
用いて研磨能率を向上させたシリコンウェーハの研磨方
法を提供することを目的とする。[0004] The present invention provides a polishing slurry for polishing silicon wafers capable of improving the polishing efficiency without deteriorating the surface roughness, and using the novel polishing agent to improve the polishing efficiency. It is an object of the present invention to provide a method for polishing a silicon wafer.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
に、本発明のシリコンウェーハ研磨用研磨剤において
は、コロイダルシリカ研磨剤がアルミン酸ナトリウムを
含有するようにしたものである。Means for Solving the Problems In order to solve the above-mentioned problems, in the polishing slurry for silicon wafer of the present invention, the colloidal silica polishing slurry contains sodium aluminate.
【０００６】上記アルミン酸ナトリウムの含有量は、研
磨剤の総量に対して、０．１〜２．０ｗｔ％であること
が好ましく、０．３〜１．５ｗｔ％がさらに好ましく、
０．９〜１．５ｗｔ％が最も好ましい。この含有量が
０．１ｗｔ％に満たない時は研磨能率向上の効果はほと
んどなく、２．０ｗｔ％を越えたときはさらなる研磨能
率の向上がなく不経済となる。[0006] The content of the sodium aluminate is preferably 0.1 to 2.0 wt%, more preferably 0.3 to 1.5 wt%, based on the total amount of the abrasive.
0.9 to 1.5 wt% is most preferred. When the content is less than 0.1 wt%, there is almost no effect of improving the polishing efficiency, and when it exceeds 2.0 wt%, there is no further improvement in the polishing efficiency, which is uneconomical.
【０００７】本発明のシリコンウェーハの研磨方法は、
上記したシリコンウェーハ研磨用研磨剤を用いて、ウェ
ーハを研磨するようにしたものである。この場合、研磨
パッドの種類、硬度とは関係なく本発明の目的を達成す
ることができるものである。The method for polishing a silicon wafer according to the present invention comprises:
A wafer is polished using the above-mentioned polishing slurry for silicon wafers. In this case, the object of the present invention can be achieved regardless of the type and hardness of the polishing pad.
【０００８】[0008]
【実施例】以下に実施例をあげて説明する。Embodiments will be described below with reference to embodiments.
【０００９】（実施例１） 試料ウェーハ：ＣＺ、ｐ型、結晶方位＜１００＞、１５
０ｍｍφ、シリコンウェーハ 研磨パッド：発泡ウレタン樹脂、硬度：アスキーＣ硬度
８０ 研磨剤：ＡＪ−１３２５〔コロイダルシリカ研磨剤原液
の商品名、日産化学工業（株）製〕９９ｗｔ％＋アルミ
ン酸ナトリウム〔和光純薬（株）製〕１ｗｔ％研磨荷
重：４００ｇ／ｃｍ2 研磨時間：１０分 上記条件にて試料ウェーハを研磨加工した。研磨中の研
磨速度を測定して図１に示した。また、得られた研磨ウ
ェーハの表面粗さを光学干渉式粗さ計（ＷＹＫＯ社製Ｗ
ＹＫＯＴＯＰＯ−３Ｄ、２５０μｍ□）で測定（平均二
乗粗さ）し、その結果を図２に示した。(Example 1) Sample wafer: CZ, p-type, crystal orientation <100>, 15
0 mmφ, silicon wafer Polishing pad: urethane foam resin, hardness: ASCII C hardness 80 Abrasive: AJ-1325 [trade name of a stock solution of colloidal silica abrasive, manufactured by Nissan Chemical Industries, Ltd.] 99 wt% + sodium aluminate [Wako Pure 1 wt% polishing load: 400 g / cm 2 Polishing time: 10 minutes The sample wafer was polished under the above conditions. The polishing rate during polishing was measured and is shown in FIG. Further, the surface roughness of the obtained polished wafer was measured using an optical interference type roughness meter (WYKO W
YKOTOPO-3D (250 μm square)) (mean square roughness), and the results are shown in FIG.
【００１０】（比較例１） 研磨剤：ＡＪ−１３２５〔コロイダルシリカ研磨剤原液
の商品名、日産化学工業（株）製〕１００ｗｔ％（添加
剤なし） 上記研磨剤を用いた以外は、実施例１と同様にして試料
ウェーハを研磨加工した研磨中の研磨速度及び得られた
研磨ウェーハの表面粗さを測定し、その結果をそれぞれ
図１及び図２に示した。(Comparative Example 1) Abrasive: AJ-1325 (trade name of stock solution of colloidal silica abrasive, manufactured by Nissan Chemical Industries, Ltd.) 100 wt% (no additive) Example except that the above-mentioned abrasive was used. The polishing rate during polishing of the sample wafer and the surface roughness of the obtained polished wafer were measured in the same manner as in Example 1, and the results are shown in FIGS. 1 and 2, respectively.
【００１１】（比較例２） 研磨剤：ＡＪ−１３２５〔コロイダルシリカ研磨剤原液
の商品名、日産化学工業（株）製〕９９ｗｔ％＋アミノ
アルコール（エタノールアミン）１．０ｗｔ％ 上記研磨剤を用いた以外は、実施例１と同様にして試料
ウェーハを研磨加工した研磨中の研磨速度及び得られた
研磨ウェーハの表面粗さを測定し、その結果をそれぞれ
図１及び図２に示した。(Comparative Example 2) Abrasive: AJ-1325 (trade name of a stock solution of colloidal silica abrasive, manufactured by Nissan Chemical Industries, Ltd.) 99 wt% + amino alcohol (ethanolamine) 1.0 wt% The polishing rate during the polishing of the sample wafer and the surface roughness of the obtained polished wafer were measured in the same manner as in Example 1 except for the difference, and the results are shown in FIGS. 1 and 2, respectively.
【００１２】上記した実施例及び比較例に示した結果か
ら、本発明の研磨剤を用いてウェーハを研磨する場合、
その研磨速度は、比較例２と同等であるが、比較例１と
比較して一段と向上しており、また研磨したウェーハの
表面粗さは、悪化しておらず、比較例１と同等であるが
比較例２と比較して格段に良好であることがわかった。From the results shown in the above Examples and Comparative Examples, when polishing a wafer using the abrasive of the present invention,
The polishing rate is the same as that of Comparative Example 2, but is much more improved than that of Comparative Example 1, and the surface roughness of the polished wafer is not deteriorated and is equal to that of Comparative Example 1. Was much better than Comparative Example 2.
【００１３】（実施例２〜４及び比較例３） 試料ウェーハ：ＣＺ、ｐ型、結晶方位＜１００＞、１５
０ｍｍφ、シリコンウェーハ 研磨パッド：発泡ウレタン樹脂、硬度：アスキーＣ硬度
８０ 研磨剤：ＡＪ−１３２５〔コロイダルシリカ研磨剤原液
の商品名、日産化学工業（株）製〕 研磨荷重：４００ｇ／ｃｍ2 研磨時間：１０分 上記の研磨条件において、コロイダルシリカ研磨剤に対
するアルミン酸ナトリウム添加量（ｗｔ％）を無添加
（比較例３）、０．５（実施例２）、１．０（実施例
３）、１．４（実施例４）と変化させて試料ウェーハを
研磨し、研磨中の研磨速度を測定し、その結果を図３に
示した。図３から明らかなごとく、アルミン酸ナトリウ
ムの添加により研磨速度が大幅に向上することがわかっ
た。また、上記実施例として、ｐ型ウェーハについて述
べたが、これはｎ型ウェーハにおいても全く同様の効果
が得られることは確認している。(Examples 2 to 4 and Comparative Example 3) Sample wafer: CZ, p-type, crystal orientation <100>, 15
0 mmφ, silicon wafer Polishing pad: urethane foam resin, hardness: ASCII C hardness 80 Abrasive: AJ-1325 [trade name of undiluted colloidal silica abrasive, manufactured by Nissan Chemical Industries, Ltd.] Polishing load: 400 g / cm 2 polishing time : 10 minutes Under the above polishing conditions, the addition amount (wt%) of sodium aluminate to the colloidal silica abrasive was not added (Comparative Example 3), 0.5 (Example 2), 1.0 (Example 3), The sample wafer was polished while changing the value to 1.4 (Example 4), and the polishing rate during the polishing was measured. As is clear from FIG. 3, it was found that the polishing rate was significantly improved by the addition of sodium aluminate. In addition, although a p-type wafer has been described as the above example, it has been confirmed that the same effect can be obtained with an n-type wafer.
【００１４】[0014]
【発明の効果】以上述べたごとく、本発明によれば、ウ
ェーハの研磨を行なうにあたり、研磨速度が高まること
により研磨能率を向上させることができ、かつ研磨ウェ
ーハの表面粗さを悪化させることがないという効果が達
成される。As described above, according to the present invention, when polishing a wafer, the polishing efficiency can be improved by increasing the polishing rate, and the surface roughness of the polished wafer can be deteriorated. No effect is achieved.
【図１】実施例１及び比較例１、２における研磨速度を
示すグラフである。FIG. 1 is a graph showing polishing rates in Example 1 and Comparative Examples 1 and 2.
【図２】実施例１及び比較例１、２において研磨された
ウェーハの表面粗さを示すグラフである。FIG. 2 is a graph showing the surface roughness of the wafer polished in Example 1 and Comparative Examples 1 and 2.
【図３】実施例２〜４及び比較例３におけるアルミン酸
ナトリウム添加量と研磨速度の関係を示すグラフであ
る。FIG. 3 is a graph showing the relationship between the amount of sodium aluminate added and the polishing rate in Examples 2 to 4 and Comparative Example 3.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴木 清 福島県西白河郡西郷村大字小田倉字大平 150 信越半導体株式会社 半導体白河 研究所内 (56)参考文献 特開 昭52−150789（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/304 C09K 3/14 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Kiyoshi Suzuki 150 Ohira, Odakura, Nishigo-mura, Nishishirakawa-gun, Fukushima Prefecture Shin-Etsu Semiconductor Co., Ltd. Semiconductor Shirakawa Laboratory (56) References 58) Fields surveyed (Int.Cl. 6 , DB name) H01L 21/304 C09K 3/14
Claims (3)
トリウムを含有することを特徴とするシリコンウェーハ
研磨用研磨剤。1. A polishing agent for polishing silicon wafers, wherein the colloidal silica polishing agent contains sodium aluminate.
０．１〜２．０ｗｔ％であることを特徴とする請求項１
記載のシリコンウェーハ研磨用研磨剤。2. The method according to claim 1, wherein the content of said sodium aluminate is 0.1 to 2.0 wt%.
An abrasive for polishing a silicon wafer according to the above.
求項１又は２記載のシリコンウェーハ研磨用研磨剤を用
いて研磨することを特徴とするシリコンウェーハの研磨
方法。3. A method for polishing a silicon wafer, comprising polishing the silicon wafer by using the polishing slurry for silicon wafer according to claim 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6217393A JP2970833B2 (en) | 1994-09-12 | 1994-09-12 | Polishing agent for polishing silicon wafer and polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6217393A JP2970833B2 (en) | 1994-09-12 | 1994-09-12 | Polishing agent for polishing silicon wafer and polishing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0883781A JPH0883781A (en) | 1996-03-26 |
| JP2970833B2 true JP2970833B2 (en) | 1999-11-02 |
Family
ID=16703487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6217393A Expired - Lifetime JP2970833B2 (en) | 1994-09-12 | 1994-09-12 | Polishing agent for polishing silicon wafer and polishing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2970833B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3317330B2 (en) * | 1995-12-27 | 2002-08-26 | 信越半導体株式会社 | Manufacturing method of semiconductor mirror surface wafer |
| CN103692337A (en) * | 2013-12-18 | 2014-04-02 | 杭州晶地半导体有限公司 | Silicon wafer polishing method for adopting mixed fructose to paste silicon wafers |
| JPWO2016043089A1 (en) * | 2014-09-16 | 2017-08-10 | 山口精研工業株式会社 | Abrasive composition for sapphire substrate |
| JP7152168B2 (en) * | 2018-03-27 | 2022-10-12 | 株式会社フジミインコーポレーテッド | Polishing composition |
-
1994
- 1994-09-12 JP JP6217393A patent/JP2970833B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0883781A (en) | 1996-03-26 |
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