TW201611946A - Modifying substrate thickness profiles - Google Patents

Modifying substrate thickness profiles

Info

Publication number
TW201611946A
TW201611946A TW104122940A TW104122940A TW201611946A TW 201611946 A TW201611946 A TW 201611946A TW 104122940 A TW104122940 A TW 104122940A TW 104122940 A TW104122940 A TW 104122940A TW 201611946 A TW201611946 A TW 201611946A
Authority
TW
Taiwan
Prior art keywords
substrate thickness
thickness profiles
modifying substrate
back surface
polishing pad
Prior art date
Application number
TW104122940A
Other languages
English (en)
Other versions
TWI691379B (zh
Inventor
Jay Gurusamy
Hung Chih Chen
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/334,948 external-priority patent/US9662762B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201611946A publication Critical patent/TW201611946A/zh
Application granted granted Critical
Publication of TWI691379B publication Critical patent/TWI691379B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
TW104122940A 2014-07-18 2015-07-15 用於修改基板厚度輪廓的研磨系統、研磨工具及方法 TWI691379B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462026269P 2014-07-18 2014-07-18
US14/334,948 US9662762B2 (en) 2014-07-18 2014-07-18 Modifying substrate thickness profiles
US62/026,269 2014-07-18
US14/334,948 2014-07-18

Publications (2)

Publication Number Publication Date
TW201611946A true TW201611946A (en) 2016-04-01
TWI691379B TWI691379B (zh) 2020-04-21

Family

ID=55078939

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104122940A TWI691379B (zh) 2014-07-18 2015-07-15 用於修改基板厚度輪廓的研磨系統、研磨工具及方法

Country Status (5)

Country Link
JP (1) JP6778176B2 (zh)
KR (1) KR102376928B1 (zh)
CN (1) CN106463384B (zh)
TW (1) TWI691379B (zh)
WO (1) WO2016010865A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI733915B (zh) * 2016-10-10 2021-07-21 美商應用材料股份有限公司 控制基板的處理的方法，及其研磨系統和電腦程式產品
TWI739906B (zh) * 2016-10-18 2021-09-21 日商荏原製作所股份有限公司 基板處理控制系統、基板處理控制方法、以及程式
US11865671B2 (en) 2019-04-18 2024-01-09 Applied Materials, Inc. Temperature-based in-situ edge assymetry correction during CMP
US11951589B2 (en) 2019-11-22 2024-04-09 Applied Materials, Inc. Wafer edge asymmetry correction using groove in polishing pad

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017165068A1 (en) * 2016-03-25 2017-09-28 Applied Materials, Inc. Local area polishing system and polishing pad assemblies for a polishing system
KR102629679B1 (ko) * 2018-11-09 2024-01-29 주식회사 케이씨텍 연마 장치용 캐리어 헤드 및 이에 사용되는 멤브레인
US11282755B2 (en) * 2019-08-27 2022-03-22 Applied Materials, Inc. Asymmetry correction via oriented wafer loading
CN111975469A (zh) * 2020-08-28 2020-11-24 上海华力微电子有限公司 化学机械研磨的方法及研磨系统

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06333891A (ja) * 1993-05-24 1994-12-02 Sony Corp 基板研磨装置および基板保持台
US5938504A (en) * 1993-11-16 1999-08-17 Applied Materials, Inc. Substrate polishing apparatus
US5558563A (en) * 1995-02-23 1996-09-24 International Business Machines Corporation Method and apparatus for uniform polishing of a substrate
US6267659B1 (en) * 2000-05-04 2001-07-31 International Business Machines Corporation Stacked polish pad
JP2002246346A (ja) * 2001-02-14 2002-08-30 Hiroshima Nippon Denki Kk 化学機械研磨装置
US20020164926A1 (en) * 2001-05-07 2002-11-07 Simon Mark G. Retainer ring and method for polishing a workpiece
US6863771B2 (en) * 2001-07-25 2005-03-08 Micron Technology, Inc. Differential pressure application apparatus for use in polishing layers of semiconductor device structures and methods
US6764387B1 (en) * 2003-03-07 2004-07-20 Applied Materials Inc. Control of a multi-chamber carrier head
US6913518B2 (en) * 2003-05-06 2005-07-05 Applied Materials, Inc. Profile control platen
TWI275451B (en) * 2005-01-11 2007-03-11 Asia Ic Mic Process Inc Measurement of thickness profile and elastic modulus profile of polishing pad
US7198548B1 (en) * 2005-09-30 2007-04-03 Applied Materials, Inc. Polishing apparatus and method with direct load platen
US8858300B2 (en) * 2010-02-09 2014-10-14 International Business Machines Corporation Applying different pressures through sub-pad to fixed abrasive CMP pad
KR101941586B1 (ko) * 2011-01-03 2019-01-23 어플라이드 머티어리얼스, 인코포레이티드 압력 제어되는 폴리싱 플래튼
JP6282437B2 (ja) * 2012-10-18 2018-02-21 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 研磨パッドコンディショナ用ダンパ
US20140141694A1 (en) * 2012-11-21 2014-05-22 Applied Materials, Inc. In-Sequence Spectrographic Sensor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI733915B (zh) * 2016-10-10 2021-07-21 美商應用材料股份有限公司 控制基板的處理的方法，及其研磨系統和電腦程式產品
TWI739906B (zh) * 2016-10-18 2021-09-21 日商荏原製作所股份有限公司 基板處理控制系統、基板處理控制方法、以及程式
US11865671B2 (en) 2019-04-18 2024-01-09 Applied Materials, Inc. Temperature-based in-situ edge assymetry correction during CMP
US11951589B2 (en) 2019-11-22 2024-04-09 Applied Materials, Inc. Wafer edge asymmetry correction using groove in polishing pad

Also Published As

Publication number Publication date
TWI691379B (zh) 2020-04-21
KR102376928B1 (ko) 2022-03-18
JP6778176B2 (ja) 2020-10-28
WO2016010865A1 (en) 2016-01-21
CN106463384A (zh) 2017-02-22
KR20170034404A (ko) 2017-03-28
JP2017527107A (ja) 2017-09-14
CN106463384B (zh) 2020-03-17

Similar Documents

Publication Publication Date Title
TW201611946A (en) Modifying substrate thickness profiles
PH12016502549B1 (en) Vaporizer assembly
MX2015015153A (es) Metodos y dispositivos para activacion celular.
TWD167562S (zh) 眼鏡
TWD169054S (zh) 轉接座
PH12016502601A1 (en) A CARRIER, ASSEMBLY and METHOD FOR HANDLING COMPONENTS
EP3120379A4 (en) Abrasive pad and glass substrate abrading method
EP3007858A4 (en) Low surface roughness polishing pad
TW201613721A (en) Chemical mechanical polishing layer formulation with conditioning tolerance
MX2017000966A (es) Aposito laminado de espuma.
MY182612A (en) Coated compressive subpad for chemical mechanical polishing
IL251183A0 (en) A non-porous designed item for the polishing layer, polishing pad and polishing method
TWD177181S (zh) 電線托架（一）
MX359861B (es) Unidad de aposito para heridas.
TWD176849S (zh) 眼鏡
MX2016013836A (es) Materiales de construccion que incluyen una capa de tela no tejida de adhesivo sensible a la presion.
PH12016501335A1 (en) Composite sheet for protective-film formation
TWD166713S (zh) 用於基板托盤的封接件
EP4233928A3 (en) Nanoreservoirs
MX2017009359A (es) Forro de liberacion con diferente recubrimiento de superficie.
MY183395A (en) Cleaning member and substrate cleaning apparatus
UA76270U (uk) Спосіб оздоблення шкіри
EP3420579A4 (en) WINDOW OF A THIN POLISHING PAD
TW201613140A (en) Semiconductor light emitting device and light emitting apparatus
NZ591900A (en) Hinged sanding block