TW201611946A - Modifying substrate thickness profiles - Google Patents
Modifying substrate thickness profilesInfo
- Publication number
- TW201611946A TW201611946A TW104122940A TW104122940A TW201611946A TW 201611946 A TW201611946 A TW 201611946A TW 104122940 A TW104122940 A TW 104122940A TW 104122940 A TW104122940 A TW 104122940A TW 201611946 A TW201611946 A TW 201611946A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate thickness
- thickness profiles
- modifying substrate
- back surface
- polishing pad
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000005498 polishing Methods 0.000 abstract 5
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462026269P | 2014-07-18 | 2014-07-18 | |
US14/334,948 US9662762B2 (en) | 2014-07-18 | 2014-07-18 | Modifying substrate thickness profiles |
US62/026,269 | 2014-07-18 | ||
US14/334,948 | 2014-07-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201611946A true TW201611946A (en) | 2016-04-01 |
TWI691379B TWI691379B (zh) | 2020-04-21 |
Family
ID=55078939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104122940A TWI691379B (zh) | 2014-07-18 | 2015-07-15 | 用於修改基板厚度輪廓的研磨系統、研磨工具及方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6778176B2 (zh) |
KR (1) | KR102376928B1 (zh) |
CN (1) | CN106463384B (zh) |
TW (1) | TWI691379B (zh) |
WO (1) | WO2016010865A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI733915B (zh) * | 2016-10-10 | 2021-07-21 | 美商應用材料股份有限公司 | 控制基板的處理的方法,及其研磨系統和電腦程式產品 |
TWI739906B (zh) * | 2016-10-18 | 2021-09-21 | 日商荏原製作所股份有限公司 | 基板處理控制系統、基板處理控制方法、以及程式 |
US11865671B2 (en) | 2019-04-18 | 2024-01-09 | Applied Materials, Inc. | Temperature-based in-situ edge assymetry correction during CMP |
US11951589B2 (en) | 2019-11-22 | 2024-04-09 | Applied Materials, Inc. | Wafer edge asymmetry correction using groove in polishing pad |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017165068A1 (en) * | 2016-03-25 | 2017-09-28 | Applied Materials, Inc. | Local area polishing system and polishing pad assemblies for a polishing system |
KR102629679B1 (ko) * | 2018-11-09 | 2024-01-29 | 주식회사 케이씨텍 | 연마 장치용 캐리어 헤드 및 이에 사용되는 멤브레인 |
US11282755B2 (en) * | 2019-08-27 | 2022-03-22 | Applied Materials, Inc. | Asymmetry correction via oriented wafer loading |
CN111975469A (zh) * | 2020-08-28 | 2020-11-24 | 上海华力微电子有限公司 | 化学机械研磨的方法及研磨系统 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06333891A (ja) * | 1993-05-24 | 1994-12-02 | Sony Corp | 基板研磨装置および基板保持台 |
US5938504A (en) * | 1993-11-16 | 1999-08-17 | Applied Materials, Inc. | Substrate polishing apparatus |
US5558563A (en) * | 1995-02-23 | 1996-09-24 | International Business Machines Corporation | Method and apparatus for uniform polishing of a substrate |
US6267659B1 (en) * | 2000-05-04 | 2001-07-31 | International Business Machines Corporation | Stacked polish pad |
JP2002246346A (ja) * | 2001-02-14 | 2002-08-30 | Hiroshima Nippon Denki Kk | 化学機械研磨装置 |
US20020164926A1 (en) * | 2001-05-07 | 2002-11-07 | Simon Mark G. | Retainer ring and method for polishing a workpiece |
US6863771B2 (en) * | 2001-07-25 | 2005-03-08 | Micron Technology, Inc. | Differential pressure application apparatus for use in polishing layers of semiconductor device structures and methods |
US6764387B1 (en) * | 2003-03-07 | 2004-07-20 | Applied Materials Inc. | Control of a multi-chamber carrier head |
US6913518B2 (en) * | 2003-05-06 | 2005-07-05 | Applied Materials, Inc. | Profile control platen |
TWI275451B (en) * | 2005-01-11 | 2007-03-11 | Asia Ic Mic Process Inc | Measurement of thickness profile and elastic modulus profile of polishing pad |
US7198548B1 (en) * | 2005-09-30 | 2007-04-03 | Applied Materials, Inc. | Polishing apparatus and method with direct load platen |
US8858300B2 (en) * | 2010-02-09 | 2014-10-14 | International Business Machines Corporation | Applying different pressures through sub-pad to fixed abrasive CMP pad |
KR101941586B1 (ko) * | 2011-01-03 | 2019-01-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 압력 제어되는 폴리싱 플래튼 |
JP6282437B2 (ja) * | 2012-10-18 | 2018-02-21 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 研磨パッドコンディショナ用ダンパ |
US20140141694A1 (en) * | 2012-11-21 | 2014-05-22 | Applied Materials, Inc. | In-Sequence Spectrographic Sensor |
-
2015
- 2015-07-10 KR KR1020177004530A patent/KR102376928B1/ko active IP Right Grant
- 2015-07-10 WO PCT/US2015/040064 patent/WO2016010865A1/en active Application Filing
- 2015-07-10 JP JP2017502835A patent/JP6778176B2/ja active Active
- 2015-07-10 CN CN201580032583.9A patent/CN106463384B/zh active Active
- 2015-07-15 TW TW104122940A patent/TWI691379B/zh active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI733915B (zh) * | 2016-10-10 | 2021-07-21 | 美商應用材料股份有限公司 | 控制基板的處理的方法,及其研磨系統和電腦程式產品 |
TWI739906B (zh) * | 2016-10-18 | 2021-09-21 | 日商荏原製作所股份有限公司 | 基板處理控制系統、基板處理控制方法、以及程式 |
US11865671B2 (en) | 2019-04-18 | 2024-01-09 | Applied Materials, Inc. | Temperature-based in-situ edge assymetry correction during CMP |
US11951589B2 (en) | 2019-11-22 | 2024-04-09 | Applied Materials, Inc. | Wafer edge asymmetry correction using groove in polishing pad |
Also Published As
Publication number | Publication date |
---|---|
TWI691379B (zh) | 2020-04-21 |
KR102376928B1 (ko) | 2022-03-18 |
JP6778176B2 (ja) | 2020-10-28 |
WO2016010865A1 (en) | 2016-01-21 |
CN106463384A (zh) | 2017-02-22 |
KR20170034404A (ko) | 2017-03-28 |
JP2017527107A (ja) | 2017-09-14 |
CN106463384B (zh) | 2020-03-17 |
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