TW201610581A - Photosensitive resin composition, and insulating film and electric device using same - Google Patents

Photosensitive resin composition, and insulating film and electric device using same Download PDF

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TW201610581A
TW201610581A TW104110653A TW104110653A TW201610581A TW 201610581 A TW201610581 A TW 201610581A TW 104110653 A TW104110653 A TW 104110653A TW 104110653 A TW104110653 A TW 104110653A TW 201610581 A TW201610581 A TW 201610581A
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weight
copolymer
parts
resin composition
photosensitive resin
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TWI677759B (en
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金應坤
金承根
朴京在
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羅門哈斯電子材料韓國公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/201Filters in the form of arrays
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

Disclosed herein are a photosensitive resin composition, and insulating film and electric device using same. The photosensitive resin composition can exhibit good pattern formation when prepared as a cured film, and also show excellent surface formation when a metal film is applied onto the cured film, by controlling the amounts of the polymerizable compound and residual monomers of the copolymer that have not been consumed in the copolymerization, and thus can be effectively used as an interlayer insulating film in a TFT-LCD.

Description

光敏樹脂組成物及絕緣膜與使用該絕緣膜之電子裝置 Photosensitive resin composition and insulating film and electronic device using the same

本發明係有關於光敏樹脂組成物,更明確言之,係有關於用在薄膜電晶體型液晶顯示器(TFT-LCD)中形成層間絕緣膜之負型光敏樹脂組成物。 The present invention relates to a photosensitive resin composition, more specifically, to a negative photosensitive resin composition for forming an interlayer insulating film in a thin film transistor type liquid crystal display (TFT-LCD).

正型光敏樹脂組成物及負型光敏樹脂組成物係用於製造用在各種顯示裝置之絕緣膜,該顯示裝置包括液晶顯示器(LCD)、有機發光二極體(OLED)等。 The positive photosensitive resin composition and the negative photosensitive resin composition are used for producing an insulating film for use in various display devices including a liquid crystal display (LCD), an organic light emitting diode (OLED), and the like.

但於曝光處理、顯影後之後烘烤、及短波長光諸如UV射線之吸收期間,正型光敏樹脂組成物特別係含有習知鹼溶性樹脂及1,2-醌二疊氮化合物者經常出現下述問題,諸如因熱裂解導致變色,或因雜質的生成導致LCD之非期望的殘影。 However, during the exposure treatment, post-development baking, and absorption of short-wavelength light such as UV rays, the positive-type photosensitive resin composition particularly contains conventional alkali-soluble resins and 1,2-quinonediazide compounds. Problems such as discoloration due to thermal cracking, or undesired image sticking of the LCD due to the formation of impurities.

試圖藉由提供一種負型光敏樹脂組成物來補救此等問題,該光敏樹脂組成物在熱固化處理程序之後產生具有優異光透射比及感光度之固化膜。 Attempts have been made to remedy such problems by providing a negative photosensitive resin composition which produces a cured film having excellent light transmittance and sensitivity after a heat curing treatment process.

特別地,作為可用在顯示裝置諸如TFT-LCD 之有機絕緣膜之可固化樹脂組成物,曾經提出負型光敏樹脂組成物原因在於其高絕緣性質以及製程要求的其它良好性質,包括化學品抗性及耐熱性、平滑度、後製程安定性等(參考韓國公開專利案第2006-0128715號)。 In particular, as a display device such as a TFT-LCD The curable resin composition of the organic insulating film has been proposed as a negative photosensitive resin composition because of its high insulating properties and other good properties required for the process, including chemical resistance and heat resistance, smoothness, post-process stability, and the like. (Refer to Korean Patent Publication No. 2006-0128715).

但以使用習知負型光敏樹脂組成物形成圖 案化固化膜為例,於該固化膜上形成圖案化電極(金屬膜),及然後在該電極上進行額外處理,發生該金屬膜表面變不平坦且起皺的問題。 But using a conventional negative photosensitive resin composition to form a pattern As an example of a cured film, a patterned electrode (metal film) is formed on the cured film, and then an additional treatment is performed on the electrode, causing a problem that the surface of the metal film becomes uneven and wrinkles.

因此,本發明之一目的係提供一種光敏樹脂組成物,該光敏樹脂組成物當製備成絕緣膜時可顯現良好圖案生成性,且即便在一圖案化金屬膜施用至該絕緣膜上,接著經由苛刻的額外處理諸如高溫處理等之後也顯示優異的表面生成性。 Accordingly, it is an object of the present invention to provide a photosensitive resin composition which exhibits good pattern formation when prepared as an insulating film, and which is applied to the insulating film even after a patterned metal film is applied thereto Excellent surface formation is also exhibited after harsh additional treatment such as high temperature treatment.

依據本發明之一個面向,提供一種光敏樹脂組成物,其包含共聚物、可聚合化合物、光聚合起始劑及溶劑,其中以100重量份該共聚物作為該組成物中之固體含量為基準,該可聚合化合物之量為1至50重量份,及在該共聚合反應中未被耗用之該共聚物之殘餘單體之量為不多於2重量份。 According to one aspect of the present invention, there is provided a photosensitive resin composition comprising a copolymer, a polymerizable compound, a photopolymerization initiator, and a solvent, wherein 100 parts by weight of the copolymer is used as a solid content in the composition, The amount of the polymerizable compound is from 1 to 50 parts by weight, and the amount of the residual monomer of the copolymer which is not consumed in the copolymerization reaction is not more than 2 parts by weight.

依據本發明之光敏樹脂組成物,藉由調控該可聚合化合物之用量及在該共聚合反應中未被耗用之該共聚物(黏結劑)之殘餘單體量,當製備成固化膜時可顯現良好圖案生成性,及當金屬膜施用至該固化膜上時也顯示 優異的表面生成性。因而該光敏樹脂組成物可有效地用於TFT-LCD中作為層間絕緣膜。 According to the photosensitive resin composition of the present invention, by adjusting the amount of the polymerizable compound and the residual monomer amount of the copolymer (adhesive) which is not consumed in the copolymerization reaction, when the cured film is prepared Showing good pattern formation and also showing when a metal film is applied to the cured film Excellent surface formation. Therefore, the photosensitive resin composition can be effectively used as an interlayer insulating film in a TFT-LCD.

本發明之光敏樹脂組成物包含(A)共聚物,(B)可聚合化合物,(C)光聚合起始劑及(D)溶劑,及若有所需,可進一步包含(E)界面活性劑,(F)黏著促進劑等。 The photosensitive resin composition of the present invention comprises (A) a copolymer, (B) a polymerizable compound, (C) a photopolymerization initiator, and (D) a solvent, and if necessary, further comprises (E) a surfactant , (F) adhesion promoter, and the like.

後文中將以細節描述本發明之技術特徵。 The technical features of the present invention will be described in detail later.

(A)共聚物 (A) copolymer

本發明採用的共聚物包含(a1)衍生自烯屬不飽和羧酸、烯屬不飽和羧酸酐、或其混合物之結構單元;(a2)衍生自具有脂環族環氧基之不飽和化合物之結構單元;及(a3)衍生自烯屬不飽和化合物之結構單元,其係與結構單元(a1)及結構單元(a2)不同。 The copolymer used in the present invention comprises (a1) a structural unit derived from an ethylenically unsaturated carboxylic acid, an ethylenically unsaturated carboxylic anhydride, or a mixture thereof; (a2) is derived from an unsaturated compound having an alicyclic epoxy group. a structural unit; and (a3) a structural unit derived from an ethylenically unsaturated compound, which is different from the structural unit (a1) and the structural unit (a2).

(a1)衍生自烯屬不飽和羧酸、烯屬不飽和羧酸酐、或其混合物之結構單元 (a1) a structural unit derived from an ethylenically unsaturated carboxylic acid, an ethylenically unsaturated carboxylic anhydride, or a mixture thereof

結構單元(a1)係衍生自烯屬不飽和羧酸、烯屬不飽和羧酸酐、或其混合物。該烯屬不飽和羧酸、烯屬不飽和羧酸酐或其混合物為在分子內具有至少一個羧基之可聚合不飽和化合物。其實施例包括不飽和一羧酸諸如,(甲基)丙烯酸、巴豆酸、α-氯丙烯酸、桂皮酸等;不飽和二羧酸及 其酐諸如,順丁烯二酸、順丁烯二酸酐、反丁烯二酸、衣康酸、衣康酸酐、檸康酸、檸康酸酐、甲基反丁烯二酸等;三價或更多價之不飽和多羧酸及其酐;及二價或更多價之多羧酸之一[(甲基)丙烯醯基氧基烷基]酯諸如,丁二酸一[2-(甲基)丙烯醯基氧基乙基酯]、鄰苯二甲酸一[2-(甲基)丙烯醯基氧基乙酯]等,但非受此所限。於此等實施例中,就顯影能力而言以(甲基)丙烯酸為佳。 The structural unit (a1) is derived from an ethylenically unsaturated carboxylic acid, an ethylenically unsaturated carboxylic anhydride, or a mixture thereof. The ethylenically unsaturated carboxylic acid, ethylenically unsaturated carboxylic anhydride or a mixture thereof is a polymerizable unsaturated compound having at least one carboxyl group in the molecule. Examples thereof include unsaturated monocarboxylic acids such as (meth)acrylic acid, crotonic acid, α-chloroacrylic acid, cinnamic acid, etc.; unsaturated dicarboxylic acids and An anhydride thereof such as maleic acid, maleic anhydride, fumaric acid, itaconic acid, itaconic anhydride, citraconic acid, citraconic anhydride, methyl fumaric acid, etc.; trivalent or More valence of unsaturated polycarboxylic acids and their anhydrides; and one of the divalent or higher polycarboxylic acids [(meth) propylene decyloxyalkyl] esters such as, succinic acid [2-( Methyl)propenyloxyethyl ester], mono[2-(methyl)propenyloxyethyl phthalate], etc., but not limited thereto. In these examples, (meth)acrylic acid is preferred in terms of developing ability.

以組成共聚物(A)之該等結構單元之總莫耳數為基準,該結構單元(a1)之量可為5至50莫耳%,較佳地為10至40莫耳%。於此量範圍以內,該樹脂組成物將容易形成具有良好顯影性之圖案化膜。 The amount of the structural unit (a1) may be 5 to 50 mol%, preferably 10 to 40 mol%, based on the total number of moles of the structural units constituting the copolymer (A). Within this amount range, the resin composition will easily form a patterned film having good developability.

於本發明中,「(甲基)丙烯醯基」係指「丙烯醯基」及/或「甲基丙烯醯基」,及「(甲基)丙烯酸酯」係指「丙烯酸酯」及/或「甲基丙烯酸酯」。 In the present invention, "(meth)acryloyl" means "acryloyl" and/or "methacryl", and "(meth)acrylate" means "acrylate" and/or "Methacrylate".

(a2)衍生自具有脂環族環氧基之不飽和化合物之結構單元 (a2) a structural unit derived from an unsaturated compound having an alicyclic epoxy group

該結構單元(a2)係衍生自具有脂環族環氧基之不飽和化合物。 The structural unit (a2) is derived from an unsaturated compound having an alicyclic epoxy group.

於一個實施例中,該具有脂環族環氧基之不飽和化合物係以式(I)表示: In one embodiment, the alicyclic epoxy group-containing unsaturated compound is represented by formula (I):

其中R1為氫或C1-C4烷基;及R2為C1-C4伸烷基。 Wherein R 1 is hydrogen or C 1 -C 4 alkyl; and R 2 is C 1 -C 4 alkylene.

較佳地,於式(I)中,R1為氫或甲基。 Preferably, in the formula (I), R 1 is hydrogen or methyl.

於一個較佳實施例中,該具有脂環族環氧基之不飽和化合物可為丙烯酸3,4-環氧基環己基甲基酯或甲基丙烯酸3,4-環氧基環己基甲基酯。 In a preferred embodiment, the alicyclic epoxy group-containing unsaturated compound may be 3,4-epoxycyclohexylmethyl acrylate or 3,4-epoxycyclohexylmethyl methacrylate. ester.

以組成共聚物(A)之該等結構單元之總莫耳數為基準,該結構單元(a2)之量可為10至50莫耳%,較佳地為15至45莫耳%。於此量範圍以內,該組成物將具有良好儲存安定性及獲得改良之薄膜性質,諸如高圖案解析度。 The amount of the structural unit (a2) may be 10 to 50 mol%, preferably 15 to 45 mol%, based on the total number of moles of the structural units constituting the copolymer (A). Within this range, the composition will have good storage stability and improved film properties such as high pattern resolution.

(a3)衍生自烯屬不飽和化合物之結構單元,其係與結構單元(a1)及結構單元(a2)不同 (a3) a structural unit derived from an ethylenically unsaturated compound, which is different from the structural unit (a1) and the structural unit (a2)

結構單元(a3)係衍生自烯屬不飽和化合物,其係與結構單元(a1)及結構單元(a2)不同。其實施例可包括含芳香環之烯屬不飽和化合物諸如,(甲基)丙烯酸苯酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸2-苯氧基乙酯、(甲基)丙烯酸苯氧 基二乙二醇酯、(甲基)丙烯酸對-壬基苯氧基聚乙二醇酯、(甲基)丙烯酸對-壬基苯氧基聚丙二醇酯、(甲基)丙烯酸三溴苯酯、苯乙烯、甲基苯乙烯、二甲基苯乙烯、三甲基苯乙烯、乙基苯乙烯、二乙基苯乙烯、三乙基苯乙烯、丙基苯乙烯、丁基苯乙烯、己基苯乙烯、庚基苯乙烯、辛基苯乙烯、氟苯乙烯、氯苯乙烯、溴苯乙烯、碘苯乙烯、甲氧基苯乙烯、乙氧基苯乙烯、丙氧基苯乙烯、對-羥基-α-甲基苯乙烯、乙醯基苯乙烯、乙烯基甲苯、二乙烯基苯、乙烯基酚、鄰-乙烯基苄基甲基醚、間-乙烯基苄基甲基醚、及對-乙烯基苄基甲基醚;不飽和羧酸酯諸如,(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸二甲基胺基乙酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸乙基己酯、(甲基)丙烯酸四氫糠酯、(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸2-羥基-3-氯丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸甘油酯、α-羥基甲基丙烯酸甲酯、α-羥基甲基丙烯酸乙酯、α-羥基甲基丙烯酸丙酯、α-羥基甲基丙烯酸丁酯、(甲基)丙烯酸2-甲氧基乙酯、(甲基)丙烯酸3-甲氧基丁酯、(甲基)丙烯酸乙氧基二乙二醇酯、(甲基)丙烯酸甲氧基三乙二醇酯、(甲基)丙烯酸甲氧基三丙二醇酯、(甲基)丙烯酸聚(乙二醇)甲基醚、(甲基)丙烯酸四氟丙酯、(甲基)丙烯酸1,1,1,3,3,3-六氟異丙酯、(甲基)丙烯酸八氟戊酯、(甲基)丙烯酸十七氟癸酯、(甲基)丙烯酸異冰片酯、(甲基)丙烯酸二環戊烷酯、(甲基)丙 烯酸二環戊烯酯、(甲基)丙烯酸二環戊烷基氧基乙酯、(甲基)丙烯酸二環戊烯基氧基乙酯、(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸3,4-環氧基丁酯、(甲基)丙烯酸4,5-環氧基戊酯、(甲基)丙烯酸5,6-環氧基己酯、及(甲基)丙烯酸6,7-環氧基庚酯;具有N-乙烯基之三級胺諸如,N-乙烯基吡咯啶酮、N-乙烯基咔唑及N-乙烯基嗎啉;不飽和醚諸如,乙烯基甲基醚及乙烯基乙基醚;及不飽和醯亞胺諸如,N-苯基順丁烯二醯亞胺、N-(4-氯苯基)順丁烯二醯亞胺、N-(4-羥基苯基)順丁烯二醯亞胺、及N-環己基順丁烯二醯亞胺。 The structural unit (a3) is derived from an ethylenically unsaturated compound which is different from the structural unit (a1) and the structural unit (a2). Examples thereof may include an aromatic ring-containing ethylenically unsaturated compound such as phenyl (meth) acrylate, benzyl (meth) acrylate, 2-phenoxyethyl (meth) acrylate, (meth) acrylate. Phenoxy Diethylene glycol ester, p-nonylphenoxy polyethylene glycol (meth)acrylate, p-nonylphenoxy polypropylene glycol (meth)acrylate, tribromophenyl (meth)acrylate , styrene, methyl styrene, dimethyl styrene, trimethyl styrene, ethyl styrene, diethyl styrene, triethyl styrene, propyl styrene, butyl styrene, hexyl benzene Ethylene, heptyl styrene, octyl styrene, fluorostyrene, chlorostyrene, bromostyrene, iodine styrene, methoxystyrene, ethoxystyrene, propoxystyrene, p-hydroxy- Α-methylstyrene, ethyl styrene styrene, vinyl toluene, divinyl benzene, vinyl phenol, o-vinyl benzyl methyl ether, m-vinyl benzyl methyl ether, and p-ethylene Alkylbenzyl ether; an unsaturated carboxylic acid ester such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, dimethylaminoethyl (meth)acrylate , isobutyl (meth)acrylate, tert-butyl (meth)acrylate, cyclohexyl (meth)acrylate, ethylhexyl (meth)acrylate, tetrahydroanthracene (meth)acrylate Ester, hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 2-hydroxy-3-chloropropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, (A) Glyceryl acrylate, α-hydroxymethyl methacrylate, α-hydroxyethyl methacrylate, α-hydroxypropyl methacrylate, α-hydroxy methacrylate butyl, (meth) acrylate 2-methyl Oxyethyl ester, 3-methoxybutyl (meth)acrylate, ethoxydiethylene glycol (meth)acrylate, methoxytriethylene glycol (meth)acrylate, (methyl) Methoxytripropylene glycol acrylate, poly(ethylene glycol) methyl ether (meth)acrylate, tetrafluoropropyl (meth)acrylate, 1,1,1,3,3,3-(meth)acrylate Hexafluoroisopropyl ester, octafluoropentyl (meth)acrylate, heptafluorodecyl (meth)acrylate, isobornyl (meth)acrylate, dicyclopentanyl (meth)acrylate, (methyl) ) C Dicyclopentenyl enoate, dicyclopentyloxyethyl (meth)acrylate, dicyclopentenyloxyethyl (meth)acrylate, glycidyl (meth)acrylate, (methyl) 3,4-epoxybutyl acrylate, 4,5-epoxypentyl (meth)acrylate, 5,6-epoxyhexyl (meth)acrylate, and (meth)acrylic acid 6, 7-epoxyheptyl ester; tertiary amine having N-vinyl group such as N-vinylpyrrolidone, N-vinylcarbazole and N-vinylmorpholine; unsaturated ether such as vinyl methyl Ether and vinyl ethyl ether; and unsaturated quinone imine such as N-phenyl maleimide, N-(4-chlorophenyl) maleimide, N-(4- Hydroxyphenyl) maleimide, and N-cyclohexylmethyleneimine.

以組成共聚物(A)之該等結構單元之總莫耳 數為基準,該結構單元(a3)之量可為5至70莫耳%,較佳地為15至65莫耳%。於此量範圍以內,該光敏樹脂組成物之塗覆性將大增,原因在於該鹼溶性樹脂之反應性容易受調控,及該樹脂於水性鹼性溶液中之溶解度增高之故。 The total molar of the structural units constituting the copolymer (A) The amount of the structural unit (a3) may be from 5 to 70 mol%, preferably from 15 to 65 mol%, based on the number. Within this range, the coatability of the photosensitive resin composition is greatly increased because the reactivity of the alkali-soluble resin is easily regulated, and the solubility of the resin in an aqueous alkaline solution is increased.

本發明之共聚物(A)之製備可經由進料分子 量調節劑、聚合起始劑、溶劑、及提供結構單元(a1)、(a2)及(a3)之個別化合物於一反應器內,將氮氣導入該反應器內,及以徐緩攪動讓該混合物進行聚合。 The copolymer (A) of the present invention can be prepared via a feed molecule a quantity adjusting agent, a polymerization initiator, a solvent, and an individual compound providing structural units (a1), (a2), and (a3) in a reactor, introducing nitrogen into the reactor, and allowing the mixture to be stirred slowly Perform polymerization.

該分子量調節劑可為硫醇類諸如,丁基硫 醇、辛基硫醇、月桂基硫醇等或α-甲基苯乙烯二聚體,但非受此所限。 The molecular weight regulator may be a mercaptan such as butyl sulfide Alcohol, octyl mercaptan, lauryl mercaptan, etc. or α-methylstyrene dimer, but not limited thereto.

該聚合起始劑可為偶氮化合物諸如,2,2’- 偶氮貳異丁腈、2,2’-偶氮貳(2,4-二甲基戊腈)、2,2’-偶 氮貳(4-甲氧基-2,4-二甲基戊腈)等;過氧化苯甲醯、過氧化月桂醯、過氧基特戊酸第三丁酯;或1,1-貳(第三丁基過氧基)環己烷,但非受此所限。該聚合起始劑可單獨使用或二或更多者組合使用。 The polymerization initiator may be an azo compound such as 2, 2'- Azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-even Azaindole (4-methoxy-2,4-dimethylvaleronitrile), etc.; benzamidine peroxide, laurel peroxide, tert-butyl peroxypivalate; or 1,1-anthracene ( Tert-butylperoxy)cyclohexane, but is not limited by this. The polymerization initiators may be used singly or in combination of two or more.

又,該溶劑可為常用在共聚物(A)之製備的 任何習知溶劑,較佳地為3-甲氧基丙酸甲酯或乙酸丙二醇一甲醚酯(PGMEA)。 Further, the solvent may be commonly used in the preparation of the copolymer (A). Any conventional solvent is preferably methyl 3-methoxypropionate or propylene glycol monomethyl ether acetate (PGMEA).

更明確言之,於聚合反應期間,當該反應 於溫和反應條件下長時間進行時,殘餘未反應單體量可減少。 More specifically, during the polymerization reaction, when the reaction When carried out under mild reaction conditions for a long period of time, the amount of residual unreacted monomers can be reduced.

該等反應條件及反應時間並無特殊限制; 但於一個實施例中,該反應可於低於習知方法之溫度,自室溫至至多60℃或至多65℃,歷經足夠確保徹底反應之時間進行。 The reaction conditions and reaction time are not particularly limited; In one embodiment, however, the reaction can be carried out at a temperature below the temperature of the conventional process, from room temperature up to 60 ° C or up to 65 ° C, over a period of time sufficient to ensure complete reaction.

如此製備之共聚物(A)只含有少量殘餘未反 應單體。 The copolymer (A) thus prepared contains only a small amount of residual unreacted Should be monomeric.

共聚物(A)之未反應單體(殘餘單體)係指已 經供給作為該共聚物(A)之結構單元(a-1)至(a-3)但未能參與該聚合反應之化合物(亦即,未能與該共聚物形成鏈結之化合物)。 The unreacted monomer (residual monomer) of the copolymer (A) means A compound which is a structural unit (a-1) to (a-3) of the copolymer (A) but which does not participate in the polymerization (that is, a compound which fails to form a chain with the copolymer) is supplied.

更明確言之,於本發明之該光敏樹脂組成 物中,以100重量份該共聚物作為該組成物中之一固體含量為基準,在該共聚合反應中未被耗用之該共聚物之殘餘單體之含量為不多於2重量份,較佳地為1重量份。 More specifically, the photosensitive resin composition of the present invention The content of the residual monomer of the copolymer which is not consumed in the copolymerization reaction is not more than 2 parts by weight based on 100 parts by weight of the copolymer as a solid content of the composition. It is preferably 1 part by weight.

該固體含量表示本發明之該樹脂組成物中 所含溶劑除外之成分之含量。 The solid content represents the resin composition of the present invention The content of the ingredients other than the solvent contained.

當參考聚苯乙烯藉凝膠滲透層析術(GPC, 洗提劑:四氫呋喃)測量時,如此製備之該共聚物之重量平均分子量(Mw)可於500至50,000之範圍,較佳地為於3,000至30,000之範圍。在此範圍以內,該組成物將具有對基板期望的黏合性、物理性質及化學性質、及黏度。 When referring to polystyrene by gel permeation chromatography (GPC, The weight average molecular weight (Mw) of the copolymer thus prepared may be in the range of 500 to 50,000, preferably in the range of 3,000 to 30,000, as measured by an eluent: tetrahydrofuran. Within this range, the composition will have the desired adhesion, physical and chemical properties, and viscosity to the substrate.

(B)可聚合化合物 (B) polymerizable compound

本發明之該可聚合化合物可為欲藉由聚合起始劑聚合之任何化合物,且可為具有至少一個烯屬不飽和雙鍵之丙烯酸或甲基丙烯酸之單官能酯化合物或多官能酯化合物。 用於抗化學性以具有至少兩個官能基之多官能化合物為佳。 The polymerizable compound of the present invention may be any compound to be polymerized by a polymerization initiator, and may be a monofunctional ester compound or a polyfunctional ester compound of acrylic acid or methacrylic acid having at least one ethylenically unsaturated double bond. It is preferred to use a polyfunctional compound having chemical resistance to have at least two functional groups.

可聚合化合物可為選自於由下列所組成之該組群中之一或多種化合物:二(甲基)丙烯酸乙二醇酯、二(甲基)丙烯酸丙二醇酯、二(甲基)丙烯酸二乙二醇酯、二(甲基)丙烯酸三乙二醇酯、二(甲基)丙烯酸1,6-己二醇酯、二(甲基)丙烯酸聚乙二醇酯、二(甲基)丙烯酸聚丙二醇酯、三(甲基)丙烯酸甘油酯、三(甲基)丙烯酸三羥甲基丙烷酯、三(甲基)丙烯酸季戊四醇酯、三(甲基)丙烯酸季戊四醇酯與丁二酸之一酯、四(甲基)丙烯酸季戊四醇酯、五(甲基)丙烯酸二季戊四醇酯、六(甲基)丙烯酸二季戊四醇酯、五(甲基)丙烯酸二季戊四醇酯與丁二酸之一酯、經己內酯改質之六 (甲基)丙烯酸二季戊四醇酯、三丙烯酸季戊四醇酯二異氰酸六亞甲基酯(三丙烯酸季戊四醇酯與二異氰酸六亞甲基酯之反應產物)、七(甲基)丙烯酸三季戊四醇酯、八(甲基)丙烯酸三季戊四醇酯、環氧基丙烯酸酯、雙酚A環氧基丙烯酸酯、雙酚A二丙烯酸酯、2,2-貳-4-丙烯醯氧基多乙氧基苯基丙烷及丙烯酸乙二醇一甲醚,但非受此所限。 The polymerizable compound may be one or more compounds selected from the group consisting of ethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, and di(meth)acrylic acid Ethylene glycol ester, triethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, polyethylene glycol di(meth)acrylate, di(meth)acrylic acid Polypropylene glycol ester, glyceryl tris(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tris(meth)acrylate and ester of succinic acid , pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, dipentaerythritol penta(meth)acrylate and one ester of succinic acid, Ester modification Dipentaerythritol (meth)acrylate, pentaerythritol triacrylate, hexamethylene diisocyanate (reaction product of pentaerythritol triacrylate and hexamethylene diisocyanate), tripentaerythritol hepta(meth)acrylate Ester, tripentaerythritol octa(meth)acrylate, epoxy acrylate, bisphenol A epoxy acrylate, bisphenol A diacrylate, 2,2-贰-4-propenyloxypolyethoxylate Phenylpropane and ethylene glycol monomethyl ether, but not limited by this.

除了前述實施例之外,該可聚合單體可為 具有直鏈伸烷基、脂環族結構及至少兩個異氰酸基之化合物,與具有至少一個羥基、3、4或5個丙烯醯基氧基及/或甲基丙烯醯基氧基之化合物反應獲得的多官能丙烯酸胺基甲酸酯化合物,但非受此所限。 In addition to the foregoing embodiments, the polymerizable monomer may be a compound having a linear alkylene group, an alicyclic structure and at least two isocyanato groups, and having at least one hydroxyl group, 3, 4 or 5 acryloyloxy groups and/or methacryloxycarbonyl groups The polyfunctional urethane amide compound obtained by the reaction of the compound is not limited thereto.

市售可聚合化合物之實例可包括單官能(甲 基)丙烯酸酯諸如,雅隆尼(Aronix)M-101、M-111及M-114(東亞合成公司(Toagosei Co.,Ltd.))、阿卡亞拉(AKAYARAD)TC-110S及TC-120S(日本化藥公司(Nippon Kayaku Co.,Ltd.))、V-158及V-2311(大阪優奇化藥工業公司(Osaka Yuki Kagaku Kogyo Co.,Ltd.))等;雙官能(甲基)丙烯酸酯諸如,雅隆尼M-210、M-240及M-6200(東亞合成公司)、卡亞拉(KAYARAD)HDDA、HX-220及R-604(日本化藥公司)、V260、V312及V335 HP(大阪優奇化藥工業公司)等;及三及更多官能(甲基)丙烯酸酯包括,雅隆尼M-309、M-400、M-403、M-405、M-450、M-7100、M-8030、M-8060及TO-1382(東亞合成公司)、卡亞拉TMPTA、DPHA、DPHA-40H、DPCA-20、DPCA-30、DPCA-60及DPCA-120(日本化藥公司)、V-295、V-300、V-360、 V-GPT、V-3PA、V-400及V-802(大阪優奇化藥工業公司)等。 Examples of commercially available polymerizable compounds may include monofunctional (A) Acrylates such as Aronix M-101, M-111 and M-114 (Toagosei Co., Ltd.), AKAYARAD TC-110S and TC-120S (Nippon Kayaku Co., Ltd.), V-158 and V-2311 (Osaka Yuki Kagaku Kogyo Co., Ltd.), etc.; difunctional (methyl Acrylates such as Yaloni M-210, M-240 and M-6200 (East Asia Synthesis Corporation), KAYARAD HDDA, HX-220 and R-604 (Nippon Chemical Co., Ltd.), V260, V312 and V335 HP (Osaka Uchi Chemical Pharmaceutical Co., Ltd.); and three or more functional (meth) acrylates including, Yaloni M-309, M-400, M-403, M-405, M-450, M -7100, M-8030, M-8060 and TO-1382 (East Asia Synthetic Company), Kayala TPTA, DPHA, DPHA-40H, DPCA-20, DPCA-30, DPCA-60 and DPCA-120 (Japanese Chemicals) Company), V-295, V-300, V-360, V-GPT, V-3PA, V-400, and V-802 (Osaka Uki Chemical Industries, Inc.).

該可聚合化合物可單獨使用或二或更多者組合使用。 The polymerizable compound may be used singly or in combination of two or more.

以100重量份該共聚物(A)(作為固體含量)為基準,該可聚合化合物(B)之量可為1至50重量份,較佳地為10至40重量份。在此範圍內,該樹脂組成物將免於諸如沈積其上的金屬膜之起皺生成等問題。 The polymerizable compound (B) may be used in an amount of 1 to 50 parts by weight, preferably 10 to 40 parts by weight, based on 100 parts by weight of the copolymer (A) as a solid content. Within this range, the resin composition will be free from problems such as wrinkle formation of a metal film deposited thereon.

(C)光聚合起始劑 (C) Photopolymerization initiator

本發明之該光聚合起始劑為當曝光於輻射諸如可見光、紫外光、深紫外輻射等時產生活性物種用以起始化合物(單體)之聚合的化合物。 The photopolymerization initiator of the present invention is a compound which, when exposed to radiation such as visible light, ultraviolet light, deep ultraviolet radiation or the like, produces an active species for polymerization of a starting compound (monomer).

該光聚合起始劑可為自由基起始劑,其並無特殊限制而可選自於由下列所組成之該組群:苯乙酮化合物、二苯甲酮化合物、安息香化合物、苯甲醯化合物、氧雜蒽酮化合物、三化合物、鹵甲基二唑化合物、洛菲酮(lophione)二聚體及其混合物。 The photopolymerization initiator may be a radical initiator, which is not particularly limited and may be selected from the group consisting of an acetophenone compound, a benzophenone compound, a benzoin compound, and benzamidine. Compound, xanthone compound, three Compound, halomethyl Diazole compounds, lophione dimers, and mixtures thereof.

該光聚合起始劑之特定實例包括,但非限制性,2,2’-偶氮貳異丁腈、2,2’-偶氮貳(2,4-二甲基戊腈)、2,2’-偶氮貳(4-甲氧基-2,4-二甲基戊腈)、過氧化苯甲醯、過氧化月桂醯、過氧基特戊酸第三丁酯、1,1-貳(第三丁基過氧基)環己烷、對-二甲基胺基苯乙酮、2-苄基-2-(二甲基胺基)-1-[4-(4-嗎啉基)苯基]-1-丁酮、2-羥基-2-甲基-1-苯基-丙-1-酮、苄基二甲基縮酮、二苯甲酮、安息香丙基 醚、二乙基硫雜蒽酮、2,4-貳(三氯甲基)-6-對-甲氧基苯基-對稱三、2-二苯乙烯-4,6-貳-三氯甲基-對稱三、2-三氯甲基-5-苯乙烯基-1,3,4-二唑、9-苯基吖啶、3-甲基-5-胺基-((對稱三-2-基)胺基)-3-苯基香豆素、2-(鄰-氯苯基)-4,5-二苯基咪唑基二聚體、1-苯基-1,2-丙二酮-2-(鄰-乙氧基羰基)肟、1-[4-(苯基硫基)苯基]-辛烷-1,2-二酮-2-(O-苯甲醯基肟)、1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-乙烷-1-酮肟-O-乙酸酯、鄰-苯甲醯基-4’-(苯并硫醇)苯甲醯基-己基-酮肟、2,4,6-三甲基苯基羰基-二苯基膦醯基氧化物、六氟磷酸-三烷基苯基鋶鹽、2-巰基苯并咪唑、2,2’-苯并噻唑基二硫化物及其混合物。 Specific examples of the photopolymerization initiator include, but are not limited to, 2,2'-azobisisobutyronitrile, 2,2'-arsenazo (2,4-dimethylvaleronitrile), 2, 2'-Azoquinone (4-methoxy-2,4-dimethylvaleronitrile), Benzoyl peroxide, Lauryl peroxide, Tert-butyl peroxypivalate, 1,1-贰(t-butylperoxy)cyclohexane, p-dimethylaminoacetophenone, 2-benzyl-2-(dimethylamino)-1-[4-(4-morpholine) Phenyl]-1-butanone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, benzyldimethylketal, benzophenone, benzoin propyl ether, two Ethyl thioxanthone, 2,4-indole (trichloromethyl)-6-p-methoxyphenyl-symmetric three 2-stilbene-4,6-fluorene-trichloromethyl-symmetric three 2-trichloromethyl-5-styryl-1,3,4- Diazole, 9-phenyl acridine, 3-methyl-5-amino-((symmetric three) -2-yl)amino)-3-phenylcoumarin, 2-(o-chlorophenyl)-4,5-diphenylimidazolyl dimer, 1-phenyl-1,2-propane Diketo-2-(o-ethoxycarbonyl)anthracene, 1-[4-(phenylthio)phenyl]-octane-1,2-dione-2-(O-benzylidenehydrazine) , 1-[9-ethyl-6-(2-methylbenzylidenyl)-9H-indazol-3-yl]-ethane-1-one oxime-O-acetate, o-benzene Mercapto-4'-(benzothiol)benzimidyl-hexyl-ketooxime, 2,4,6-trimethylphenylcarbonyl-diphenylphosphonium ruthenium oxide, hexafluorophosphoric acid-three Alkylphenyl sulfonium salts, 2-mercaptobenzimidazoles, 2,2'-benzothiazolyl disulfides, and mixtures thereof.

又,針對高感光度之較佳者為揭示於下列 之一或多種肟化合物:韓國公開專利案KR 2004-0007700、KR 2005-0084149、KR 2008-0083650、KR 2008-0080208、KR 2007-0044062、KR 2007-0091110、KR 2007-0044753、KR 2009-0009991、KR 2009-0093933、KR 2010-0097658、KR 2011-0059525、KR 2011-0091742、KR 2011-0026467及KR 2011-0015683、及國際專利公告案WO 2010/102502及WO 2010/133077。市售光聚合起始劑之特佳實施例包括OXE-01(巴斯夫(BASF))、OXE-02(巴斯夫(BASF))、N-1919(旭電化(ADEKA))、NCI-930(旭電化)、NCI-831(旭電化)等。 Also, the preferred one for high sensitivity is disclosed in the following One or more bismuth compounds: Korean public patents KR 2004-0007700, KR 2005-0084149, KR 2008-0083650, KR 2008-0080208, KR 2007-0044062, KR 2007-0091110, KR 2007-0044753, KR 2009-0009991 , KR 2009-0093933, KR 2010-0097658, KR 2011-0059525, KR 2011-0091742, KR 2011-0026467 and KR 2011-0015683, and International Patent Publications WO 2010/102502 and WO 2010/133077. Particularly preferred examples of commercially available photopolymerization initiators include OXE-01 (BASF), OXE-02 (BASF), N-1919 (ADEKA), NCI-930 (Asahi Chemical) ), NCI-831 (Asahi Kasei) and so on.

以100重量份該共聚物(A)(作為固體含量) 為基準,該光聚合起始劑(C)之含量可為0.1至20重量份, 較佳地為1至15重量份。在此範圍內,該樹脂組成物容易形成具有良好顯影性及高感光度之圖案膜。 100 parts by weight of the copolymer (A) (as a solid content) The photopolymerization initiator (C) may be included in an amount of 0.1 to 20 parts by weight. It is preferably from 1 to 15 parts by weight. Within this range, the resin composition easily forms a pattern film having good developability and high sensitivity.

(D)溶劑 (D) solvent

藉混合前述成分及溶劑,本發明之該光敏樹脂組成物可製備成液體組成物。 The photosensitive resin composition of the present invention can be prepared into a liquid composition by mixing the aforementioned components and a solvent.

技藝界已知之任一種溶劑其係與前述光敏 樹脂組成物之成分為可相容性但非反應性者皆可用於該光敏樹脂組成物之製備。 Any solvent known to the artisan The composition of the resin composition is compatible but non-reactive can be used for the preparation of the photosensitive resin composition.

溶劑之實施例可包括,但非限制性,乙酸 乙二醇一烷醚酯諸如,乙酸乙二醇一甲醚酯及乙酸乙二醇一乙醚酯;丙二醇一烷醚諸如,丙二醇一甲醚、丙二醇一乙醚、丙二醇一丙醚、及丙二醇一丁醚;丙二醇二烷醚諸如,丙二醇二甲醚、丙二醇二乙醚、丙二醇二丙醚、及丙二醇二丁醚;二丙二醇二烷醚諸如,二丙二醇二甲醚;乙酸丙二醇一烷醚酯諸如,乙酸丙二醇一甲醚酯、乙酸丙二醇一乙醚酯、乙酸丙二醇一丙醚、及乙酸丙二醇一丁醚;溶纖素類諸如乙基溶纖素及丁基溶纖素;卡畢醇類諸如丁基卡畢醇;乳酸酯類諸如乳酸甲酯、乳酸乙酯、乳酸正丙酯、及乳酸異丙酯;脂肪族羧酸酯類諸如乙酸乙酯、乙酸正丙酯、乙酸異丙酯、乙酸正丁酯、乙酸異丁酯、乙酸正戊酯、乙酸異戊酯、丙酸異丙酯、丙酸正丁酯、及丙酸異丁酯;酯類諸如3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、丙酮酸甲酯及丙 酮酸乙酯;芳香族烴類諸如甲苯及二甲苯;酮類諸如2-庚酮、3-庚酮、4-庚酮、及環己酮;醯胺類諸如N-二甲基甲醯胺、N-甲基乙醯胺、N-二甲基乙醯胺、及N-甲基吡咯啶酮;內酯類諸如γ-丁內酯;及其混合物。該溶劑可單獨使用或二或多者組合使用。 Examples of solvents can include, but are not limited to, acetic acid Ethylene glycol monoalkyl ether esters such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether; propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, and propylene glycol monobutylene Ether; propylene glycol dialkyl ether such as propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol dipropyl ether, and propylene glycol dibutyl ether; dipropylene glycol dialkyl ether such as dipropylene glycol dimethyl ether; propylene glycol monoalkyl ether acetate such as acetic acid Propylene glycol monomethyl ether ester, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, and propylene glycol monobutyl ether; cellulosin such as ethyl cellosolve and butyl cellulolytic; carbachol such as butyl carbinol Lactic acid esters such as methyl lactate, ethyl lactate, n-propyl lactate, and isopropyl lactate; aliphatic carboxylic acid esters such as ethyl acetate, n-propyl acetate, isopropyl acetate, n-butyl acetate, Isobutyl acetate, n-amyl acetate, isoamyl acetate, isopropyl propionate, n-butyl propionate, and isobutyl propionate; esters such as methyl 3-methoxypropionate, 3-methyl Ethyl oxypropionate, methyl 3-ethoxypropionate, 3 - Ethyl ethoxy propionate, methyl pyruvate and C Ethyl ketoates; aromatic hydrocarbons such as toluene and xylene; ketones such as 2-heptanone, 3-heptanone, 4-heptanone, and cyclohexanone; guanamines such as N-dimethylformamide , N-methylacetamide, N-dimethylacetamide, and N-methylpyrrolidone; lactones such as γ-butyrolactone; and mixtures thereof. The solvent may be used singly or in combination of two or more.

該溶劑於該光敏樹脂組成物中之量並無特 殊限制。但考慮該組成物之塗覆性及安定性,以該組成物之總重為基準,該溶劑之量可讓該組成物之固體含量於5wt%至70wt%,較佳地為10wt%至55wt%之範圍。該固體含量表示本發明之該樹脂組成物所含溶劑除外的該等成分之含量。 The amount of the solvent in the photosensitive resin composition is not particularly Special restrictions. However, considering the coatability and stability of the composition, the amount of the solvent may be such that the solid content of the composition is from 5 wt% to 70 wt%, preferably from 10 wt% to 55 wt%, based on the total mass of the composition. The range of %. The solid content indicates the content of the components excluding the solvent contained in the resin composition of the present invention.

(E)界面活性劑 (E) surfactant

若有所需,本發明之該光敏樹脂組成物可進一步包含界面活性劑以便提升其塗覆能力及防止瑕疵之形成。 If desired, the photosensitive resin composition of the present invention may further comprise a surfactant to enhance its coating ability and prevent the formation of ruthenium.

界面活性劑並無特殊限制,但較佳地為氟界面活性劑、以矽為主之界面活性劑、非離子性界面活性劑、或其它界面活性劑。 The surfactant is not particularly limited, but is preferably a fluorosurfactant, a ruthenium-based surfactant, a nonionic surfactant, or other surfactant.

界面活性劑之實施例包括以氟為主之界面活性劑或以矽為主之界面活性劑諸如,BM-1000、BM-1100(BM化學公司(BM CHEMIE Co.,Ltd.))、美格包(Megapack)F142 D、F-172、F-173、F-183、F-470、F-471、F-475、F-482、F-489(大日本油墨化學工業公司(Dai Nippon Ink Kagaku Kogyo Co.,Ltd.))、福拉德(Florad)FC-135、FC-170 C、FC-430、 FC-431(住友3M公司(Sumitomo 3M Ltd.))、薩福隆(Sufron)S-112、S-113、S-131、S-141、S-145、S-382、SC-101、SC-102、SC-103、SC-104、SC-105、SC-106(旭玻璃公司(Asahi Glass Co.,Ltd.))、伊芙塔(Eftop)EF301、303、352(新貝田化成公司(Shinakida Kasei Co.,Ltd.))、SH-28 PA、SH-190、SH-193、SZ-6032、SF-8428、DC-57、DC-190(東麗矽公司(Toray Silicon Co.,Ltd.))、DC3PA、DC7PA、SH11PA、SH21PA、SH8400、FZ-2100、FZ-2110、FZ-2122、FZ-2222、FZ-2233(道康寧(Dow Corning)東麗矽公司)、TSF-4440、TSF-4300、TSF-4445、TSF-4446、TSF-4460、TSF-4452(奇異東芝矽公司(GE Toshiba Silicon Co.,Ltd.))、及比克(BYK)-333(比克公司(BYK Co.,Ltd.));非離子性界面活性劑諸如,聚氧伸乙基烷基醚類包括,聚氧伸乙基月桂基醚、聚氧伸乙基硬脂基醚、聚氧伸乙基油基醚等,聚氧伸乙基芳基醚類包括,聚氧伸乙基辛基苯基醚、聚氧伸乙基壬基苯基醚等,及聚氧伸乙基二烷基酯類包含,聚氧伸乙基二月桂酸酯、聚氧伸乙基二硬脂酸酯等;及有機矽氧烷聚合物KP341(新越化學工業公司(Shin-Etsu Kagaku Kogyo Co.,Ltd.))、以(甲基)丙烯酸酯為主之共聚物玻利流(Polyflow)No.57、95(共榮社油脂化學工業公司(Kyoeisha Yushi Kagaku Kogyo Co.,Ltd.))等。其可單獨使用或二或多者組合使用。 Examples of the surfactant include a fluorine-based surfactant or a ruthenium-based surfactant such as BM-1000, BM-1100 (BM CHEMIE Co., Ltd.), Meg Package (Megapack) F142 D, F-172, F-173, F-183, F-470, F-471, F-475, F-482, F-489 (Dai Nippon Ink Kagaku Kogyo Co., Ltd.)), Florad FC-135, FC-170 C, FC-430, FC-431 (Sumitomo 3M Ltd.), Sufron S-112, S-113, S-131, S-141, S-145, S-382, SC-101, SC -102, SC-103, SC-104, SC-105, SC-106 (Asahi Glass Co., Ltd.), Eftop EF301, 303, 352 (New Beida Chemical Co., Ltd. ( Shinakida Kasei Co., Ltd.)), SH-28 PA, SH-190, SH-193, SZ-6032, SF-8428, DC-57, DC-190 (Toray Silicon Co., Ltd.) .)), DC3PA, DC7PA, SH11PA, SH21PA, SH8400, FZ-2100, FZ-2110, FZ-2122, FZ-2222, FZ-2233 (Dow Corning), TSF-4440, TSF -4300, TSF-4445, TSF-4446, TSF-4460, TSF-4452 (GE Toshiba Silicon Co., Ltd.), and BYK-333 (BYK Co) ., Ltd.)); nonionic surfactants such as polyoxyethylene ethyl ethers include polyoxyethylene ethyl lauryl ether, polyoxyethylene ethyl stearyl ether, polyoxyethyl ether Olefinic ethers, etc., polyoxyethylene ethyl aryl ethers, polyoxyethylene ethyl octyl phenyl ether, polyoxyethylene ethyl phenyl ether, and polyoxyethylene ethyl dialkyl esters contain Polyoxyethylene ethyl laurate, polyoxyethylene ethyl distearate, and the like; and an organic siloxane polymer KP341 (Shin-Etsu Kagaku Kogyo Co., Ltd.), (Methyl) acrylate-based copolymer Polyflow No. 57, 95 (Kyoeisha Yushi Kagaku Kogyo Co., Ltd.). They may be used singly or in combination of two or more.

考慮該組成物之分散性,以比克(BYK)-333 (比克公司(BYK Co.,Ltd.))為佳。 Considering the dispersibility of the composition, to BYK-333 (BYK Co., Ltd.) is preferred.

以100重量份該共聚物(A)(作為固體含量) 為基準,該界面活性劑之量可為0.001至5重量份,較佳地為0.01至3重量份。在此量範圍內,該組成物容易塗覆。 100 parts by weight of the copolymer (A) (as a solid content) The amount of the surfactant may be from 0.001 to 5 parts by weight, preferably from 0.01 to 3 parts by weight. Within this amount range, the composition is easy to coat.

(F)黏著促進劑 (F) adhesion promoter

本發明之該光敏樹脂組成物可進一步含有黏著促進劑以改良與基板之黏合性。 The photosensitive resin composition of the present invention may further contain an adhesion promoter to improve adhesion to the substrate.

較佳地,該黏著促進劑可為矽烷偶合劑。 Preferably, the adhesion promoter may be a decane coupling agent.

舉例言之,該矽烷偶合劑可為具有至少一 個選自於由羧基、(甲基)丙烯醯基、異氰酸根、胺基、巰基、乙烯基及環氧基所組成之該組群中之反應性取代基的矽烷偶合劑。 For example, the decane coupling agent may have at least one A decane coupling agent selected from the group consisting of a reactive substituent in the group consisting of a carboxyl group, a (meth) propylene group, an isocyanate group, an amine group, a decyl group, a vinyl group, and an epoxy group.

矽烷偶合劑的種類並無特殊限制,但可為 選自於由下列所組成之該組群中之至少一者:三甲氧基矽基苯甲酸、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、乙烯基三乙醯氧基矽烷、乙烯基三甲氧基矽烷、γ-異氰酸根丙基三乙氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基三乙氧基矽烷、N-苯基胺基丙基三甲氧基矽烷、及β-(3,4-環氧基環己基)乙基三甲氧基矽烷。較佳地,可使用具有良好的保持率及與基板之黏合性的具有環氧基之γ-縮水甘油氧基丙基三乙氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、或N-苯基胺基丙基三甲氧基矽烷。又,可使用具有良好抗化學性的具有異氰酸根之γ-異氰酸基丙基三乙氧基矽烷(例如,KBE-9007得自新越公司)。 The type of the decane coupling agent is not particularly limited, but may be And at least one selected from the group consisting of: trimethoxymercaptobenzoic acid, γ-methylpropenyloxypropyltrimethoxydecane, vinyltriethoxydecane, ethylene Trimethoxy decane, γ-isocyanatopropyl triethoxy decane, γ-glycidoxypropyl trimethoxy decane, γ-glycidoxypropyl triethoxy decane, N-phenyl Aminopropyltrimethoxydecane, and β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane. Preferably, an epoxy group-containing γ-glycidoxypropyl triethoxy decane, γ-glycidoxypropyl trimethoxy decane, which has good retention and adhesion to a substrate, can be used. Or N-phenylaminopropyltrimethoxydecane. Further, γ-isocyanatopropyltriethoxydecane having an isocyanate having good chemical resistance can be used (for example, KBE-9007 is available from Shin-Etsu Corporation).

以100重量份該共聚物(A)(作為固體含量) 為基準,該黏著促進劑之量可為0.001至5重量份,較佳地為0.01至3重量份。在前述範圍內,該組成物對基板之黏合性可予以改良。 100 parts by weight of the copolymer (A) (as a solid content) The amount of the adhesion promoter may be 0.001 to 5 parts by weight, preferably 0.01 to 3 parts by weight. Within the foregoing range, the adhesion of the composition to the substrate can be improved.

再者,也可包括其它功能添加劑,因而改 良該光敏樹脂組成物之性質。舉例言之,該光敏樹脂組成物也可包含抗氧化劑、安定劑、自由基清除劑、著色劑以達不會造成該光敏樹脂組成物之物理性質降級的程度。 Furthermore, other functional additives may also be included, thus The properties of the photosensitive resin composition are good. For example, the photosensitive resin composition may also contain an antioxidant, a stabilizer, a radical scavenger, and a colorant to such an extent that the physical properties of the photosensitive resin composition are not degraded.

依據本發明之該光敏樹脂組成物當製備成 固化膜時顯現良好圖案形成性,當金屬膜施用至該固化膜上時也可顯示良好表面形成性,及即便在經由額外高溫處理之後亦復如此,原因在於角隅之圖案損壞減少或影響該固化膜及該金屬膜之熱膨脹率的皺褶形成的減少之故。因此,其可有效地用作為LCD及OLED,特別TFT-LCD等中之層間絕緣膜。 The photosensitive resin composition according to the present invention is prepared as Good patterning is exhibited when the film is cured, and good surface formability is also exhibited when the metal film is applied to the cured film, and even after additional high temperature treatment, because the pattern damage of the corners is reduced or affected. The cured film and the metal film have a reduced wrinkle formation of the coefficient of thermal expansion. Therefore, it can be effectively used as an interlayer insulating film in LCDs and OLEDs, particularly TFT-LCDs and the like.

更明確言之,絕緣膜之形成可藉由施用光 敏樹脂組成物至基板上,接著藉由固化步驟。如此製備之絕緣膜可用作為電子組件。 More specifically, the formation of the insulating film can be achieved by applying light. The resin composition is applied to the substrate, followed by a curing step. The insulating film thus prepared can be used as an electronic component.

該絕緣膜可藉技藝界眾所周知之習知方法 製備。舉例言之,該光敏樹脂組成物可藉旋塗法塗覆至矽基板上;於例如60℃至130℃之溫度接受預烘烤歷經60秒至130秒以去除溶劑;使用具有期望的圖案之光罩曝光;及使用顯影劑,例如氫氧化四甲基銨溶液(TMAH)接受顯影以在塗覆膜上形成圖案。然後,如此所製備之圖案化塗覆 膜係於150℃至300℃之溫度接受加熱固化(亦即,後烘烤)歷經10分鐘至5小時以製備期望之絕緣膜。 The insulating film can be obtained by a conventional method well known in the art preparation. For example, the photosensitive resin composition may be applied to the ruthenium substrate by spin coating; pre-baking at a temperature of, for example, 60 ° C to 130 ° C for 60 seconds to 130 seconds to remove the solvent; using a desired pattern The mask is exposed; and development is carried out using a developer such as tetramethylammonium hydroxide solution (TMAH) to form a pattern on the coating film. Then, the patterned coating thus prepared The film is subjected to heat curing (i.e., post-baking) at a temperature of from 150 ° C to 300 ° C for 10 minutes to 5 hours to prepare a desired insulating film.

該曝光可於200奈米至450奈米範圍之波長及10至100毫焦耳/平方厘米之曝光強度進行。 The exposure can be carried out at a wavelength in the range of 200 nm to 450 nm and an exposure intensity of 10 to 100 mJ/cm 2 .

後文中,將參考下列實施例以進一步細節描述本發明。但此等實施例係陳述用以例示本發明,及本發明之範圍並非受限於此。 Hereinafter, the present invention will be described in further detail with reference to the following examples. However, the examples are intended to illustrate the invention, and the scope of the invention is not limited thereto.

評估方法 evaluation method 共聚物之重量平均分子量(Mw) Weight average molecular weight (Mw) of the copolymer

共聚物之重量平均分子量係使用聚苯乙烯標準品,藉由凝膠滲透層析術(GPC)決定。 The weight average molecular weight of the copolymer was determined by gel permeation chromatography (GPC) using polystyrene standards.

殘餘未反應單體之測定 Determination of residual unreacted monomers

殘餘未反應單體之量之測定方式係藉由將各個試樣共聚物溶解於四氫呋喃(THF),進行液相層析術(HPLC),及然後將該結果與單體標準溶液作比較。 The amount of residual unreacted monomer was determined by liquid chromatography (HPLC) by dissolving each sample copolymer in tetrahydrofuran (THF), and then comparing the result with a monomer standard solution.

固化膜(絕緣膜)及圖案生成之評估 Evaluation of cured film (insulating film) and pattern generation

一種光敏樹脂組成物使用旋塗機塗覆在玻璃基板上。經塗覆之基板於100℃預烘烤90秒而形成3.0微米厚度之塗覆膜。施用其中具有1微米至15微米大小之方形孔的遮罩,及維持該遮罩與該基板之間距為10微米之後,該薄膜曝光於自光刻機(型號:MA6)發射之光,該光係於200奈 米至450奈米之波長範圍,基於365奈米波長於30毫焦耳/平方厘米之曝光強度。通過流體噴嘴,該薄膜藉由2.38wt%氫氧化四甲基銨(作為顯影劑)之水性溶液於23℃顯影70秒。如此獲得之已曝光薄膜在對流烤爐內於230℃後烘烤30分鐘而製造固化膜(絕緣膜)。 A photosensitive resin composition was coated on a glass substrate using a spin coater. The coated substrate was prebaked at 100 ° C for 90 seconds to form a coating film having a thickness of 3.0 μm. After applying a mask having a square hole having a size of 1 micrometer to 15 micrometers, and maintaining a distance of 10 micrometers between the mask and the substrate, the film is exposed to light emitted from a photolithography machine (model: MA6). Tie 200 The wavelength range from m to 450 nm is based on an exposure intensity of 30 mJ/cm 2 at a wavelength of 365 nm. The film was developed through a fluid nozzle at 23 ° C for 70 seconds by an aqueous solution of 2.38 wt% tetramethylammonium hydroxide (as a developer). The thus obtained exposed film was baked in a convection oven at 230 ° C for 30 minutes to produce a cured film (insulating film).

該固化膜經觀察,孔洞大小10微米之自該 遮罩形成的孔洞圖案形成係使用3-維表面剖面分析儀評估。 The cured film was observed to have a pore size of 10 μm from the The pattern formation of the holes formed by the mask was evaluated using a 3-dimensional surface profile analyzer.

皺褶形成之評估 Evaluation of wrinkle formation

如此獲得的固化膜(絕緣膜)使用蝕刻系統(電漿實驗室系統133,牛津儀器(Oxford Instruments))接受乾蝕刻(ICF/RF 1500/150W,20毫托耳,20℃,SF6 39sccm,O2 99sccm,115秒)。 The cured film (insulating film) thus obtained was subjected to dry etching using an etching system (plasma laboratory system 133, Oxford Instruments) (ICF/RF 1500/150 W, 20 mTorr, 20 ° C, SF 6 39 sccm, O 2 99sccm, 115 seconds).

隨後,金屬層使用沈積裝置(善尼克特 (Sunicoat)-IS3000,善尼克系統(Sunic System))沈積至該固化膜上(DC 3000W,2毫托耳,室溫,Ar 100sccm,27秒)。 於本方法中,鉬(Mo)用於該金屬層。 Subsequently, the metal layer uses a deposition device (Sinnik (Sunicoat)-IS3000, Sunic System) was deposited onto the cured film (DC 3000W, 2 mTorr, room temperature, Ar 100 sccm, 27 seconds). In the method, molybdenum (Mo) is used for the metal layer.

藉由將該固化膜(絕緣膜)之沈積側接受光 阻(PR)圖案化及濕蝕刻,該經沈積之金屬層接受圖案化製程處理,及然後,藉由使用光阻(PR)去除劑去除該光阻而獲得圖案化金屬層沈積其上之固化膜(絕緣膜)基板。 Receiving light by depositing the deposited side of the cured film (insulating film) Resistive (PR) patterning and wet etching, the deposited metal layer is subjected to a patterning process, and then, by using a photoresist (PR) remover to remove the photoresist, curing of the patterned metal layer is obtained thereon Film (insulating film) substrate.

如此獲得的基板浸沒於N-甲基吡咯啶酮 (NMP)溶液內10分鐘,於260℃加熱30分鐘,及然後在光 學顯微鏡及掃描電子顯微鏡(SEM)下觀察沈積於固化膜上之該金屬膜的皺褶形成。該皺褶形成可根據下列標準分類:-重度:環繞孔洞圖案可觀察得皺褶及圖案損壞,也可觀察得該金屬膜之表面皺褶及圖案損壞,皺褶之厚度明顯,及高度之差異大-皺褶可於光學顯微鏡及SEM兩者下觀察得;-中度:環繞孔洞圖案可觀察得皺褶及也可觀察得該金屬膜之表面皺褶-皺褶可於光學顯微鏡及SEM兩者下觀察得;-輕度:在該金屬膜表面上可觀察得些微皺褶-皺褶可於SEM下觀察得,但非於光學顯微鏡下;及-無:未觀察得皺褶。 The substrate thus obtained is immersed in N-methylpyrrolidone (NMP) solution for 10 minutes, heat at 260 ° C for 30 minutes, and then in the light The wrinkle formation of the metal film deposited on the cured film was observed under a microscope and a scanning electron microscope (SEM). The wrinkle formation can be classified according to the following criteria: - Severity: Wrinkles and pattern damage can be observed around the hole pattern, and the surface wrinkles and pattern damage of the metal film can be observed, the thickness of the wrinkles is obvious, and the difference in height Large-pleats can be observed under both optical microscopy and SEM; - moderate: wrinkles can be observed around the pattern of the holes, and the surface wrinkles of the metal film can be observed. The wrinkles can be observed in both optical microscopy and SEM. Observed; - Mild: Some wrinkles can be observed on the surface of the metal film - wrinkles can be observed under SEM, but not under an optical microscope; and - None: no wrinkles are observed.

共聚物之製備 Preparation of copolymer 共聚物(A-1)之製備 Preparation of copolymer (A-1)

100重量份之單體混合物包括25莫耳%甲基丙烯酸(MAA),25莫耳%甲基丙烯酸3,4-環氧基環己基甲基酯(METHB)及50莫耳%苯乙烯(St);3重量份之2,2’-偶氮貳(2,4-二甲基戊腈)作為聚合起始劑;及100重量份之乙酸丙二醇一甲醚酯作為溶劑進給至裝配有冷凝器及攪拌器之三頸瓶內。於氮氣氣氛下,混合物之溫度升高至70℃,伴以徐緩攪動及維持5小時以進行聚合而製造共聚物(A-1)之溶液。 100 parts by weight of the monomer mixture comprises 25 mol% methacrylic acid (MAA), 25 mol% methacrylic acid 3,4-epoxycyclohexylmethyl ester (METHB) and 50 mol% styrene (St 3 parts by weight of 2,2'-arsenazo (2,4-dimethylvaleronitrile) as a polymerization initiator; and 100 parts by weight of propylene glycol monomethyl ether acetate as a solvent to be supplied with condensation And the three-necked bottle of the stirrer. The temperature of the mixture was raised to 70 ° C under a nitrogen atmosphere, and the solution of the copolymer (A-1) was produced by slowly stirring and maintaining for 5 hours to carry out polymerization.

如此獲得的共聚物(A-1)具有10,300之重量平均分子 量(Mw),及以100重量份之該共聚物之固體含量為基準,未反應單體之殘餘量為1.5重量份。 The copolymer (A-1) thus obtained has a weight average molecular weight of 10,300 The amount (Mw), and the residual amount of the unreacted monomer based on 100 parts by weight of the solid content of the copolymer, was 1.5 parts by weight.

共聚物(A-2)之製備 Preparation of copolymer (A-2)

100重量份之單體混合物包括22莫耳%甲基丙烯酸(MAA),18莫耳%甲基丙烯酸3,4-環氧基環己基甲基酯(METHB),50莫耳%苯乙烯(St)及10莫耳%甲基丙烯酸縮水甘油酯(GMA);3重量份之2,2’-偶氮貳(2,4-二甲基戊腈)作為聚合起始劑;及100重量份之乙酸丙二醇一甲醚酯作為溶劑進給至裝配有冷凝器及攪拌器之三頸瓶內。於氮氣氣氛下,混合物之溫度升高至70℃,伴以徐緩攪動及維持5小時以進行聚合而製造共聚物(A-2)之溶液。 100 parts by weight of the monomer mixture comprises 22 mol% methacrylic acid (MAA), 18 mol% methacrylic acid 3,4-epoxycyclohexylmethyl ester (METHB), 50 mol% styrene (St And 10 mol% of glycidyl methacrylate (GMA); 3 parts by weight of 2,2'-arsenazo (2,4-dimethylvaleronitrile) as a polymerization initiator; and 100 parts by weight Propylene glycol monomethyl ether acetate was fed as a solvent into a three-necked flask equipped with a condenser and a stirrer. The temperature of the mixture was raised to 70 ° C under a nitrogen atmosphere, and the solution of the copolymer (A-2) was produced by slowly stirring and maintaining for 5 hours to carry out polymerization.

如此獲得的共聚物(A-2)具有10,100之重量平均分子量(Mw),及以100重量份之該共聚物之固體含量為基準,未反應單體之殘餘量為1.5重量份。 The copolymer (A-2) thus obtained had a weight average molecular weight (Mw) of 10,100, and the residual amount of the unreacted monomer was 1.5 parts by weight based on 100 parts by weight of the solid content of the copolymer.

共聚物(A-3)之製備 Preparation of copolymer (A-3)

100重量份之單體混合物包括25莫耳%甲基丙烯酸(MAA),25莫耳%甲基丙烯酸3,4-環氧基環己基甲基酯(METHB)及50莫耳%苯乙烯(St);3重量份之2,2’-偶氮貳(2,4-二甲基戊腈)作為聚合起始劑;及100重量份之乙酸丙二醇一甲醚酯作為溶劑進給至裝配有冷凝器及攪拌器之三頸瓶內。於氮氣氣氛下,混合物之溫度升高至60℃,伴以徐緩攪動及維持8小時以進行聚合而製造共聚物(A-3)之溶 液。 100 parts by weight of the monomer mixture comprises 25 mol% methacrylic acid (MAA), 25 mol% methacrylic acid 3,4-epoxycyclohexylmethyl ester (METHB) and 50 mol% styrene (St 3 parts by weight of 2,2'-arsenazo (2,4-dimethylvaleronitrile) as a polymerization initiator; and 100 parts by weight of propylene glycol monomethyl ether acetate as a solvent to be supplied with condensation And the three-necked bottle of the stirrer. The temperature of the mixture was raised to 60 ° C under a nitrogen atmosphere, and the copolymer (A-3) was dissolved by stirring slowly and maintaining for 8 hours to carry out polymerization. liquid.

如此獲得的共聚物(A-3)具有9,900之重量平均分子量(Mw),及以100重量份之該共聚物之固體含量為基準,未反應單體之殘餘量為0.8重量份。 The copolymer (A-3) thus obtained had a weight average molecular weight (Mw) of 9,900, and the residual amount of the unreacted monomer was 0.8 part by weight based on 100 parts by weight of the solid content of the copolymer.

共聚物(A-4)之製備 Preparation of copolymer (A-4)

100重量份之單體混合物包括22莫耳%甲基丙烯酸(MAA),18莫耳%甲基丙烯酸3,4-環氧基環己基甲基酯(METHB),50莫耳%苯乙烯(St)及10莫耳%甲基丙烯酸縮水甘油酯(GMA);3重量份之2,2’-偶氮貳(2,4-二甲基戊腈)作為聚合起始劑;及100重量份之乙酸丙二醇一甲醚酯作為溶劑進給至裝配有冷凝器及攪拌器之三頸瓶內。於氮氣氣氛下,混合物之溫度升高至60℃,伴以徐緩攪動及維持8小時以進行聚合而製造共聚物(A-4)之溶液。 100 parts by weight of the monomer mixture comprises 22 mol% methacrylic acid (MAA), 18 mol% methacrylic acid 3,4-epoxycyclohexylmethyl ester (METHB), 50 mol% styrene (St And 10 mol% of glycidyl methacrylate (GMA); 3 parts by weight of 2,2'-arsenazo (2,4-dimethylvaleronitrile) as a polymerization initiator; and 100 parts by weight Propylene glycol monomethyl ether acetate was fed as a solvent into a three-necked flask equipped with a condenser and a stirrer. The temperature of the mixture was raised to 60 ° C under a nitrogen atmosphere, and the solution of the copolymer (A-4) was produced by slowly stirring and maintaining for 8 hours to carry out polymerization.

如此獲得的共聚物(A-4)具有10,200之重量平均分子量(Mw),及以100重量份之該共聚物之固體含量為基準,未反應單體之殘餘量為0.7重量份。 The copolymer (A-4) thus obtained had a weight average molecular weight (Mw) of 10,200, and the residual amount of the unreacted monomer was 0.7 part by weight based on 100 parts by weight of the solid content of the copolymer.

共聚物(A-5)之製備 Preparation of copolymer (A-5)

100重量份之單體混合物包括25莫耳%甲基丙烯酸(MAA),25莫耳%甲基丙烯酸3,4-環氧基環己基甲基酯(METHB)及50莫耳%苯乙烯(St);3重量份之2,2’-偶氮貳(2,4-二甲基戊腈)作為聚合起始劑;及100重量份之乙酸丙二醇一甲醚酯作為溶劑進給至裝配有冷凝器及攪拌器之三 頸瓶內。於氮氣氣氛下,混合物之溫度升高至80℃,伴以徐緩攪動及維持3.5小時以進行聚合而製造共聚物(A-5)之溶液。 100 parts by weight of the monomer mixture comprises 25 mol% methacrylic acid (MAA), 25 mol% methacrylic acid 3,4-epoxycyclohexylmethyl ester (METHB) and 50 mol% styrene (St 3 parts by weight of 2,2'-arsenazo (2,4-dimethylvaleronitrile) as a polymerization initiator; and 100 parts by weight of propylene glycol monomethyl ether acetate as a solvent to be supplied with condensation And stirrer Inside the neck bottle. The temperature of the mixture was raised to 80 ° C under a nitrogen atmosphere, and the solution of the copolymer (A-5) was produced by slowly stirring and maintaining for 3.5 hours to carry out polymerization.

如此獲得的共聚物(A-5)具有10,200之重量平均分子量(Mw),及以100重量份之該共聚物之固體含量為基準,未反應單體之殘餘量為2.3重量份。 The copolymer (A-5) thus obtained had a weight average molecular weight (Mw) of 10,200, and the residual amount of the unreacted monomer was 2.3 parts by weight based on 100 parts by weight of the solid content of the copolymer.

組成共聚物(A-1)至共聚物(A-5)中之各者之 莫耳比摘述於下表1。 Each of the copolymer (A-1) to the copolymer (A-5) Moerby is summarized in Table 1 below.

MAA:甲基丙烯酸 MAA: Methacrylic acid

METHB:甲基丙烯酸3,4-環氧基環己基甲基酯 METHB: 3,4-epoxycyclohexylmethyl methacrylate

St:苯乙烯 St: Styrene

GMA:甲基丙烯酸縮水甘油酯 GMA: glycidyl methacrylate

其它成分 Other ingredients

可聚合化合物(B-1):六丙烯酸二季戊四醇酯(DPHA) Polymerizable Compound (B-1): Dipentaerythritol hexaacrylate (DPHA)

光聚合起始劑(C-1):伊葛丘(Irgarcure)OXE-01(巴斯夫) Photopolymerization initiator (C-1): Irgarcure OXE-01 (BASF)

光聚合起始劑(C-2):伊葛丘OXE-02(巴斯夫) Photopolymerization initiator (C-2): Igchu OXE-02 (BASF)

溶劑(D-1):乙酸丙二醇一甲醚酯 Solvent (D-1): propylene glycol monomethyl ether acetate

界面活性劑(E-1):FZ-2110(道康寧東麗矽公司) Surfactant (E-1): FZ-2110 (Dow Corning Dongli)

黏著促進劑(F-1):γ-縮水甘油氧基丙基三乙氧基矽烷 Adhesion promoter (F-1): γ-glycidoxypropyl triethoxy decane

光敏樹脂組成物之製備 Preparation of photosensitive resin composition 比較例1 Comparative example 1

以固體含量為基準,於一反應器內進給前一步驟獲得的100重量份之共聚物(A-1),55重量份之可聚合化合物(B-1),4重量份之光聚合起始劑(C-1),1.2重量份之光聚合起始劑(C-2),0.3重量份之界面活性劑(E-1),0.5重量份之黏著促進劑(F-1),及溶劑(D-1)之用量使得該混合物之固體含量為30wt%。該混合物使用振搖器混合2小時而製造液相光敏樹脂組成物。 100 parts by weight of the copolymer (A-1) obtained in the previous step, 55 parts by weight of the polymerizable compound (B-1), and 4 parts by weight of photopolymerization from a reactor, based on the solid content Starting agent (C-1), 1.2 parts by weight of a photopolymerization initiator (C-2), 0.3 parts by weight of a surfactant (E-1), 0.5 parts by weight of an adhesion promoter (F-1), and The solvent (D-1) was used in an amount such that the solid content of the mixture was 30% by weight. The mixture was mixed using a shaker for 2 hours to prepare a liquid phase photosensitive resin composition.

實施例1-1至1-3 Examples 1-1 to 1-3

光敏樹脂組成物係依據比較例1之程序製備,但該可聚合化合物(B-1)之用量係列舉於下表2。 The photosensitive resin composition was prepared in accordance with the procedure of Comparative Example 1, but the amounts of the polymerizable compound (B-1) are shown in Table 2 below.

比較例2,及實施例2-1至2-3 Comparative Example 2, and Examples 2-1 to 2-3

光敏樹脂組成物係依據比較例1之程序製備,但係使用該共聚物(A-2)及該可聚合化合物(B-1)之用量係列舉於下表2。 The photosensitive resin composition was prepared in accordance with the procedure of Comparative Example 1, except that the amounts of the copolymer (A-2) and the polymerizable compound (B-1) used in the series are shown in Table 2 below.

比較例3,及實施例3-1至3-3 Comparative Example 3, and Examples 3-1 to 3-3

光敏樹脂組成物係依據比較例1之程序製備,但係使用該共聚物(A-3)及該可聚合化合物(B-1)之用量係列舉於下表2。 The photosensitive resin composition was prepared in accordance with the procedure of Comparative Example 1, except that the amounts of the copolymer (A-3) and the polymerizable compound (B-1) used in the series are shown in Table 2 below.

比較例4,及實施例4-1至4-3 Comparative Example 4, and Examples 4-1 to 4-3

光敏樹脂組成物係依據比較例1之程序製備,但係使用該共聚物(A-4)及該可聚合化合物(B-1)之用量係列舉於下表2。 The photosensitive resin composition was prepared in accordance with the procedure of Comparative Example 1, except that the amounts of the copolymer (A-4) and the polymerizable compound (B-1) used in the series are shown in Table 2 below.

比較例5 Comparative Example 5

光敏樹脂組成物係依據比較例1之程序製備,但係使用該共聚物(A-5)及該可聚合化合物(B-1)之用量係列舉於下表2。 The photosensitive resin composition was prepared in accordance with the procedure of Comparative Example 1, except that the amounts of the copolymer (A-5) and the polymerizable compound (B-1) used in the series are shown in Table 2 below.

前述實施例及比較倒立成分及其評估結果 係摘述於下表2。 The foregoing examples and comparative inverted components and their evaluation results The lines are summarized in Table 2 below.

如上表2顯示,含有該可聚合化合物55重 量份之含量的試樣(亦即比較例1至4)結果導致「重度」皺褶形成。 As shown in Table 2 above, the weight of the polymerizable compound is 55 The results of the contents of the parts (i.e., Comparative Examples 1 to 4) resulted in the formation of "severe" wrinkles.

其餘試樣(亦即實施例1-1至4-3)結果導致 「中度」或較低發生率之皺褶形成。 The results of the remaining samples (ie, Examples 1-1 to 4-3) resulted in "Moderate" or lower incidence of wrinkles.

更明確言之,以100重量份之該共聚物為基 準,以殘餘未反應單體之量為大於1重量份至2重量份為例,含有該可聚合化合物45重量份之量的試樣(亦即實施例1-1及2-1)結果導致「中度」皺褶形成,而含有該可聚合化合物40重量份或以下之含量的試樣(亦即實施例1-2、1-3、2-2及2-3)結果導致「輕度」皺褶形成。 More specifically, based on 100 parts by weight of the copolymer As an example, the amount of the residual unreacted monomer is more than 1 part by weight to 2 parts by weight, and the sample containing the amount of the polymerizable compound in an amount of 45 parts by weight (that is, Examples 1-1 and 2-1) results in "Moderate" wrinkles were formed, and samples containing 40 parts by weight or less of the polymerizable compound (i.e., Examples 1-2, 1-3, 2-2, and 2-3) resulted in "mild Wrinkles are formed.

另一方面,以100重量份之該共聚物為基 準,以殘餘未反應單體之量為1重量份為例,含有該可聚合化合物45重量份之量的試樣(亦即實施例3-1及4-1)結果導致「輕度」皺褶形成,而含有該可聚合化合物40重量份或以下之量的試樣(亦即實施例3-2、3-3、4-2及4-3)結果導致「無」皺褶形成。 On the other hand, based on 100 parts by weight of the copolymer As an example, the amount of the residual unreacted monomer is 1 part by weight, and the sample containing the amount of the polymerizable compound in an amount of 45 parts by weight (that is, Examples 3-1 and 4-1) results in "mild" wrinkles. The pleats were formed, and the samples containing the amount of the polymerizable compound of 40 parts by weight or less (i.e., Examples 3-2, 3-3, 4-2, and 4-3) resulted in "no" wrinkle formation.

此外,以100重量份之該共聚物為基準,以 殘餘未反應單體之量為大於2重量份為例,含有該可聚合化合物35重量份之含量的試樣(亦即比較例5)結果導致「重度」皺褶形成。 Further, based on 100 parts by weight of the copolymer, The amount of the residual unreacted monomer is, for example, more than 2 parts by weight, and the sample containing the content of the polymerizable compound in an amount of 35 parts by weight (i.e., Comparative Example 5) results in "severe" wrinkle formation.

Claims (5)

一種光敏樹脂組成物,係包含共聚物、可聚合化合物、光聚合起始劑及溶劑,其中,以100重量份該共聚物作為該組成物中之固體含量為基準,該可聚合化合物之量為1至50重量份,以及在該共聚合反應中未被耗用之該共聚物之殘餘單體之量為不多於2重量份。 A photosensitive resin composition comprising a copolymer, a polymerizable compound, a photopolymerization initiator, and a solvent, wherein the amount of the polymerizable compound is 100 parts by weight of the copolymer as a solid content in the composition. The amount of residual monomers of the copolymer which is 1 to 50 parts by weight, and which is not consumed in the copolymerization reaction, is not more than 2 parts by weight. 如申請專利範圍第1項所述之光敏樹脂組成物,其中,以100重量份該共聚物為基準,該可聚合化合物之量為10至40重量份。 The photosensitive resin composition according to claim 1, wherein the polymerizable compound is used in an amount of 10 to 40 parts by weight based on 100 parts by weight of the copolymer. 如申請專利範圍第1項所述之光敏樹脂組成物,其中,以100重量份該共聚物為基準,該共聚物之該殘餘單體之量為不多於1重量份。 The photosensitive resin composition according to claim 1, wherein the residual monomer of the copolymer is not more than 1 part by weight based on 100 parts by weight of the copolymer. 如申請專利範圍第3項所述之光敏樹脂組成物,其中,以100重量份該共聚物為基準,該可聚合化合物之量為10至40重量份。 The photosensitive resin composition according to claim 3, wherein the polymerizable compound is used in an amount of 10 to 40 parts by weight based on 100 parts by weight of the copolymer. 如申請專利範圍第1項所述之光敏樹脂組成物,其中,該共聚物包含(a1)衍生自烯屬不飽和羧酸、烯屬不飽和羧酸酐、或其混合物之結構單元;(a2)衍生自具有脂環族環氧基之不飽和化合物之結構單元;以及(a3)衍生自烯屬不飽和化合物之結構單元,係與結構單元(a1)及結構單元(a2)不同。 The photosensitive resin composition according to claim 1, wherein the copolymer comprises (a1) a structural unit derived from an ethylenically unsaturated carboxylic acid, an ethylenically unsaturated carboxylic anhydride, or a mixture thereof; (a2) a structural unit derived from an unsaturated compound having an alicyclic epoxy group; and (a3) a structural unit derived from an ethylenically unsaturated compound, which is different from the structural unit (a1) and the structural unit (a2).
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