TW201610173A - Method for forming solder bumps and solder paste for fixing solder balls - Google Patents

Method for forming solder bumps and solder paste for fixing solder balls Download PDF

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Publication number
TW201610173A
TW201610173A TW104116059A TW104116059A TW201610173A TW 201610173 A TW201610173 A TW 201610173A TW 104116059 A TW104116059 A TW 104116059A TW 104116059 A TW104116059 A TW 104116059A TW 201610173 A TW201610173 A TW 201610173A
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solder
paste
solder paste
flux
acid
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TW104116059A
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TWI636140B (en
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八十嶋司
中川将
石川雅之
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三菱綜合材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60045—Pre-treatment step of the bump connectors prior to bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60067—Aligning the bump connectors with the mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60225—Arrangement of bump connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60225—Arrangement of bump connectors prior to mounting
    • H01L2021/6024—Arrangement of bump connectors prior to mounting wherein the bump connectors are disposed only on the mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

This method for forming solder bumps includes: a step of coating a solder paste on electrodes of a substrate, and mounting and temporarily fixing solder balls on the solder paste; and a step of subsequently subjecting the solder paste and the solder balls to a reflow treatment. This solder paste for fixing solder balls includes solder powder and flux, wherein an average particle size of the solder powder is in a range of 0.1 [mu]m to 10 [mu]m, and a mixed amount of the flux is in a range of 75 vol% to 93 vol%.

Description

焊料凸塊之形成方法及焊料球固定用焊料膏 Solder bump forming method and solder ball fixing solder paste

本發明係關於為了藉由覆晶安裝等使半導體裝置連接於基板上，而使用焊料球形成焊料凸塊之方法。 The present invention relates to a method of forming a solder bump using a solder ball in order to connect a semiconductor device to a substrate by flip chip mounting or the like.

本申請案基於2014年5月20日於日本申請之日本特願2014-104345號主張優先權，其內容援用於本文中。 The present application claims priority based on Japanese Patent Application No. 2014-104345, filed on Jan.

近年來，隨著網路資訊公司之急速發展，作為對應於半導體裝置之高功能化‧小型化之高密度晶片之安裝方法，覆晶安裝較為普及。該覆晶安裝中，有使用焊料球而形成設於晶圓或中介層(interposer)之焊料凸塊以連接半導體裝置之方法。焊料球係小球狀之焊料，且係搭載於晶圓或中介層之電極上使用。 In recent years, with the rapid development of network information companies, flip chip mounting has become popular as a method of mounting high-density wafers that are highly functional and miniaturized in semiconductor devices. In the flip chip mounting, there is a method of forming a solder bump provided on a wafer or an interposer using a solder ball to connect a semiconductor device. The solder ball is a small spherical solder and is used by being mounted on an electrode of a wafer or an interposer.

一般，晶圓與中介層之間之凸塊稱為內凸塊，中介層係介隔內凸塊而安裝於晶圓上(覆晶安裝)。另一方面，中介層與主機板基板之間之凸塊稱為外凸塊。該外凸塊係使用比內凸塊大之焊料球形成，中介層係利用外凸塊與主機板基板接合。 Generally, the bump between the wafer and the interposer is called an inner bump, and the interposer is mounted on the wafer via the inner bump (flip-chip mounting). On the other hand, the bump between the interposer and the motherboard substrate is called an outer bump. The outer bump is formed using a solder ball larger than the inner bump, and the interposer is bonded to the motherboard substrate by the outer bump.

將焊料球搭載於晶圓或中介層上作為內凸塊時，首先，將用以暫時固定焊料球之助焊劑印刷於電極上，隨後，搭載焊料球。接著，以氮氣氛圍中之回焊爐使焊料球熔融而成為凸塊。然而，助焊劑在回焊處理時軟化且流動，故所搭載之焊料球亦流動。因此，會有焊料球自電極上滾落而無法形成焊墊之虞。且，特別是於狹窄之間隙(間格為狹窄間隙)中，會有彼此相鄰之球熔融而結合之虞，而成為焊料凸塊之高度差異之原因。 When the solder ball is mounted on the wafer or the interposer as the inner bump, first, the flux for temporarily fixing the solder ball is printed on the electrode, and then the solder ball is mounted. Next, the solder balls were melted in a reflow furnace in a nitrogen atmosphere to become bumps. However, since the flux softens and flows during the reflow process, the solder balls to be mounted also flow. Therefore, there is a possibility that the solder ball rolls off the electrode and the solder pad cannot be formed. Further, particularly in the narrow gap (the narrow gap between the spaces), the balls adjacent to each other are melted and joined together, which is a cause of the difference in height of the solder bumps.

專利文獻1中揭示為了防止電極表面之氧化及提高焊料球之潤濕性等，而藉由印刷等將預塗佈用之焊料膏塗佈於電極上並進行回焊處理，而於電極上形成薄的均勻且平滑性優異之預塗層，並於該預塗層上搭載焊料球且進行回焊處理。 Patent Document 1 discloses that in order to prevent oxidation of an electrode surface and improve wettability of a solder ball, a solder paste for precoating is applied to an electrode by printing or the like and subjected to a reflow process to form an electrode. A thin, uniform and smooth precoat layer is provided, and a solder ball is placed on the precoat layer and subjected to a reflow process.

若依據此，由於預塗層發揮對電極之高的潤濕性，故焊料球之回焊處理時，預塗層之焊料與焊料球之焊料彼此熔融，於電極上適當形成焊料凸塊。且，由於形成平滑且均勻之預塗層，故推定在回焊處理時亦可降低焊料球之流動。 According to this, since the precoat layer exhibits high wettability to the electrode, the solder of the precoat layer and the solder of the solder ball are melted each other during the reflow process of the solder ball, and solder bumps are appropriately formed on the electrode. Moreover, since a smooth and uniform precoat layer is formed, it is presumed that the flow of the solder balls can also be reduced during the reflow process.

專利文獻1中記載之預塗覆處理之方法係過去以來主要作為外凸塊之形成法而已知者。當然，亦為使用作為內凸塊之形成法之技術。惟，仍然要求能使用焊料球，以更簡易、更確實的形成內凸塊及外凸塊之方法。 The method of precoating treatment described in Patent Document 1 has been known mainly as a method of forming a bump. Of course, it is also a technique used as a method of forming the inner bumps. However, there is still a need for a method in which solder balls can be used to form inner bumps and outer bumps more easily and more reliably.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2012-179624號公報 [Patent Document 1] Japanese Laid-Open Patent Publication No. 2012-179624

在該背景下，為了代替印刷助焊劑且搭載‧固定球之方法或專利文獻1所記載之施以預塗覆處理並搭載‧接合球之方法，本發明之目的在於提供可更簡易且確實地暫時固定焊料球，形成良率及高度精度提高之焊料凸塊(內凸塊或外凸塊)之方法以及用以固定焊料球之焊料膏。 In this context, in order to replace the printing flux and to mount the ball, or the method of applying the precoating process and mounting the ball in the patent document 1, the object of the present invention is to provide a simpler and more reliable A method of temporarily fixing solder balls to form solder bumps (inner bumps or bumps) with improved yield and height accuracy, and a solder paste for fixing solder balls.

本發明之一樣態之焊料凸塊之形成方法具有下列步驟：將焊料膏塗佈於基板之電極上，且於前述焊料膏上搭載焊料球而暫時固定之步驟，及隨後，回焊處理前述焊料膏及前述焊料球之步驟。 The method for forming a solder bump of the present invention has the steps of: applying a solder paste to an electrode of a substrate, temporarily mounting the solder ball on the solder paste, and subsequently, reflowing the solder The step of the paste and the aforementioned solder balls.

亦即，藉由焊料膏之黏著力，將焊料球暫時固定於電極上。且，焊料膏含有焊料粉末時，回焊處理時，與先前技術之僅以助焊劑暫時固定焊料球之情況不同，該焊料粉末與焊料球一起熔融而一體化。因此，焊料球不會滾落。又，作為基板亦包含前述之晶圓、中介層之任一者。 That is, the solder ball is temporarily fixed to the electrode by the adhesion of the solder paste. Further, when the solder paste contains the solder powder, unlike the case where the solder ball is temporarily fixed by the flux only in the prior art, the solder powder is melted and integrated with the solder ball. Therefore, the solder balls do not roll off. Further, the substrate also includes any of the aforementioned wafers and interposers.

本發明之一樣態之焊料凸塊之形成方法中，前述焊料膏含有焊料粉末，且前述焊料粉末之平均粒徑為0.1μm~10μm。 In the method of forming a solder bump according to the present invention, the solder paste contains solder powder, and the solder powder has an average particle diameter of 0.1 μm to 10 μm.

焊料粉末之平均粒徑過大時，會有電極上之塗佈厚度(焊料膏之塗膜厚度)產生高度差異之虞，而使搭載於該焊料膏上之焊料球容易產生傾斜。且，焊料粉末之平均粒徑大時，亦容易產生孔洞。另一方面，焊料粉末之平均粒徑過小時，焊料粉末之製造困難，且回焊處理時難以熔融。基於該觀點，焊料粉末之平均粒徑較好為0.1μm~10μm。 When the average particle diameter of the solder powder is too large, there is a difference in height between the coating thickness on the electrode (the thickness of the coating film of the solder paste), and the solder ball mounted on the solder paste tends to be inclined. Further, when the average particle diameter of the solder powder is large, voids are likely to occur. On the other hand, when the average particle diameter of the solder powder is too small, the production of the solder powder is difficult, and it is difficult to melt at the time of the reflow process. From this viewpoint, the average particle diameter of the solder powder is preferably from 0.1 μm to 10 μm.

本發明之一樣態之焊料凸塊之形成方法中，前述焊料膏含有助焊劑，且前述焊料膏中之前述助焊劑之混合量亦可為75體積%~93體積%。 In the method of forming a solder bump according to the present invention, the solder paste contains a flux, and the flux of the solder paste may be 75 to 93% by volume.

助焊劑之量過多時，成為與先前技術之僅以助焊劑暫時固定焊料球之情況相同之狀態，焊料球容易滾落。助焊劑之量過少時，相對地焊料粉末量變多，故有因焊料膏之塗膜厚產生高度差異之虞。基於該觀點，焊料膏中之助焊劑量較好為75體積%~93體積%。 When the amount of the flux is too large, it is in the same state as in the prior art in which the solder ball is temporarily fixed only by the flux, and the solder ball is liable to roll off. When the amount of the flux is too small, the amount of the solder powder is relatively large, and there is a difference in height due to the coating film thickness of the solder paste. Based on this point of view, the flux amount in the solder paste is preferably from 75% by volume to 93% by volume.

本發明之一樣態之焊料球固定用焊料膏含有焊料粉末與助焊劑，且前述焊料粉末之平均粒徑為0.1μm~10μm，前述助焊劑之混合量為75體積%~93體積%。 The solder paste for solder ball fixing in the same state of the present invention contains a solder powder and a flux, and the solder powder has an average particle diameter of 0.1 μm to 10 μm, and the flux is blended in an amount of 75% by volume to 93% by volume.

藉由使用含有該焊料粉末與助焊劑之焊料膏，可簡易且確實地暫時固定焊料球。 By using a solder paste containing the solder powder and the flux, the solder balls can be temporarily and reliably fixed.

依據本發明之一樣態，可藉由塗佈焊料膏且搭載焊料球之簡便方法，暫時固定焊料球，防止焊料球之滾落，可確實地形成焊料凸塊(內凸塊、外凸塊)，且可提高良率、高度精度。 According to the state of the present invention, the solder ball can be temporarily fixed by applying a solder paste and a solder ball, and the solder ball can be prevented from rolling off, and the solder bumps (inner bumps, outer bumps) can be reliably formed. And can improve yield and height accuracy.

1‧‧‧基板 1‧‧‧Substrate

2‧‧‧電極焊墊 2‧‧‧Electrode pads

3‧‧‧焊料凸塊 3‧‧‧ solder bumps

10‧‧‧凸塊電極 10‧‧‧Bump electrode

11‧‧‧阻劑層 11‧‧‧Resist layer

12‧‧‧開口部 12‧‧‧ openings

13‧‧‧模板遮罩 13‧‧‧Template mask

14‧‧‧焊料膏 14‧‧‧ solder paste

15‧‧‧焊料球 15‧‧‧ solder balls

圖1為依序顯示應用本發明之一實施形態之方法形成凸塊電極之步驟之剖面圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing, in order, a step of forming a bump electrode by a method of an embodiment of the present invention.

以下，邊參照圖式邊說明本發明之實施形態。此處，記載於中介層上形成內凸塊之情況(中介層中，於欲形成內凸塊之部位形成焊料凸塊之情況)。此處雖未記載，但於晶圓側上形成內凸塊時(晶圓中，於欲形成內凸塊之部位形成焊料凸塊之情況)，形成外凸塊時(中介層與主基板中，於欲形成外凸塊之部位形成焊料凸塊之情況)亦沒有太大差異，均可應用本實施形態。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. Here, the case where the inner bump is formed on the interposer (in the case where the solder bump is formed in the interposer where the inner bump is to be formed) is described. Although not described here, when the inner bump is formed on the wafer side (in the case where the solder bump is formed in the portion where the inner bump is to be formed in the wafer), when the outer bump is formed (interposing layer and main substrate) This embodiment can be applied without any difference in the case where a solder bump is formed in a portion where the bump is to be formed.

圖1(d)顯示應用本實施形態之方法所形成之凸塊電極10，於基板1之電極焊墊2上形成焊料凸塊3。覆晶安裝時，係形成多數的焊料凸塊，但圖1僅記載1個焊料凸塊3。 Fig. 1(d) shows a bump electrode 10 formed by applying the method of the present embodiment, and a solder bump 3 is formed on the electrode pad 2 of the substrate 1. In the case of flip chip mounting, a large number of solder bumps are formed, but only one solder bump 3 is shown in FIG.

基板1具備半導體封裝用有機基板、於該有機基板之表面上形成之電路層、絕緣層等。電極焊墊2露出於基板 1之表面。電極焊墊2亦可使用Sn或Au/Ni/Cu等金屬化層，但較好使用Cu或經塗佈抗氧化膜之Cu。 The substrate 1 includes an organic substrate for semiconductor encapsulation, a circuit layer formed on the surface of the organic substrate, an insulating layer, and the like. Electrode pad 2 is exposed on the substrate The surface of 1 . As the electrode pad 2, a metallization layer such as Sn or Au/Ni/Cu may be used, but Cu or a Cu coated with an oxidation resistant film is preferably used.

且，成為焊料凸塊3之焊料球或焊料球固定用焊料膏之材料較好係如Sn-Ag合金、Pb-Sn合金、Sn-Bi合金、Sn-Zn合金、Sn-Sb合金、Sn-Cu合金、Sn-Ag-Cu合金等之由Sn與添加成分所成之Sn系合金。更具體列舉為具有後述之實施例所記載之組成之合金。 Further, the material of the solder ball or the solder ball fixing solder paste which becomes the solder bump 3 is preferably a Sn-Ag alloy, a Pb-Sn alloy, a Sn-Bi alloy, a Sn-Zn alloy, a Sn-Sb alloy, a Sn- A Sn-based alloy made of Sn and an additive component such as a Cu alloy or a Sn-Ag-Cu alloy. More specifically, it is an alloy which has the composition of the Example mentioned later.

接著，針對於基板1上製造此構成之凸塊電極10之方法(凸塊之形成方法)，以圖1所示之步驟依序加以說明。 Next, a method of forming the bump electrode 10 of this configuration on the substrate 1 (a method of forming the bumps) will be sequentially described with reference to the steps shown in FIG. 1.

(阻劑層形成步驟) (resist layer formation step)

預先，於基板1上形成阻劑層11，藉由對該阻劑層11施以曝光、顯影處理，而於阻劑層11中，相當於各電極焊墊2之位置形成開口部12(圖1(a))。藉此，成為經由開口部12使各電極焊墊2之上面露出之狀態。該阻劑層11之厚度設為例如15μm~20μm，開口部12之內徑係對應於所得焊料凸塊3之外徑而設定。 The resist layer 11 is formed on the substrate 1 in advance, and the resist layer 11 is subjected to exposure and development treatment, and the opening portion 12 is formed in the resist layer 11 at a position corresponding to each electrode pad 2 (Fig. 1(a)). Thereby, the upper surface of each electrode pad 2 is exposed through the opening portion 12. The thickness of the resist layer 11 is, for example, 15 μm to 20 μm, and the inner diameter of the opening portion 12 is set corresponding to the outer diameter of the obtained solder bump 3.

(焊料膏塗佈步驟) (solder paste coating step)

接著，如圖1(b)所示，以厚度10μm~30μm之模板(stencil)遮罩13覆蓋阻劑層11之上面。又，模板遮罩13相當於阻劑層11之開口部12，且於欲填充焊料膏14之部分設置開口部。在以模板遮罩13覆蓋阻劑層11之狀態 下，藉由網版印刷，自基板1之阻劑層11之上方塗佈焊料膏14，而將焊料膏14填充於阻劑層11之開口部12內。 Next, as shown in FIG. 1(b), the upper surface of the resist layer 11 is covered with a stencil mask 13 having a thickness of 10 μm to 30 μm. Further, the template mask 13 corresponds to the opening portion 12 of the resist layer 11, and an opening portion is provided in a portion where the solder paste 14 is to be filled. The state in which the resist layer 11 is covered with the template mask 13 Next, the solder paste 14 is applied from above the resist layer 11 of the substrate 1 by screen printing, and the solder paste 14 is filled in the opening portion 12 of the resist layer 11.

該焊料膏(本實施形態之焊料球固定用焊料膏)14含有焊料粉末與助焊劑，且具有黏著性。 This solder paste (the solder paste for solder ball fixing of this embodiment) 14 contains solder powder and a flux, and has adhesiveness.

焊料粉末係藉由霧化法等製造，其材料可選自前述之合金中，但以與後述之焊料球15相同之材料構成。焊料粉末之平均粒徑為0.1μm~10μm，較好為2μm~6μm。 The solder powder is produced by an atomization method or the like, and the material thereof may be selected from the above-described alloys, but is made of the same material as the solder balls 15 described later. The average particle diameter of the solder powder is from 0.1 μm to 10 μm, preferably from 2 μm to 6 μm.

此外，助焊劑含有松脂等樹脂成分、活性劑、觸變劑及溶劑，且可使用無鹵型、活性(RA)型、弱活性(RMA)型、水溶性型等助焊劑。 Further, the flux contains a resin component such as rosin, an active agent, a thixotropic agent, and a solvent, and a flux such as a halogen-free type, an active (RA) type, a weakly active (RMA) type, or a water-soluble type can be used.

助焊劑中之樹脂成分列舉為膠松脂、木松脂、牛油松指、歧化松脂、聚合松脂、氫化松脂及該等之衍生物等松脂類，以及該等之編織物之松脂系改質樹脂等。 The resin component in the flux is exemplified by rosin, wood rosin, tallow pine, disproportionated turpentine, polymerized turpentine, hydrogenated turpentine, and the like, and rosin such as the rosin-based modified resin of the woven fabric. .

活性劑列舉為有機酸、非解離性之含鹵素化合物、解離型之含鹵素化合物、胺類、咪唑類等。 The active agent is exemplified by an organic acid, a non-dissociable halogen-containing compound, a dissociated halogen-containing compound, an amine, an imidazole, and the like.

有機酸列舉為丙酸、丁酸、戊酸、己酸、庚酸、癸酸、月桂酸、肉荳蔻酸、十五烷酸、棕櫚酸、十七烷酸、硬脂酸、結核菌硬脂酸(tuberculostearic acid)、海藻酸、山萮酸、二十四烷酸(lignoceric acid)、乙醇酸、草酸、丙二酸、琥珀酸、戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、富馬酸、馬來酸、酒石酸、二乙醇酸、二聚物酸、乙醯丙酸(levulinic acid)、乳酸、丙烯酸、苯甲酸、水楊酸、茴香酸(anisic acid)、檸檬酸、吡啶甲酸 等。 The organic acids are listed as propionic acid, butyric acid, valeric acid, caproic acid, heptanoic acid, citric acid, lauric acid, myristic acid, pentadecanoic acid, palmitic acid, heptadecanoic acid, stearic acid, tuberculosis stearin. Acid (tuberculostearic acid), alginic acid, behenic acid, lignoceric acid, glycolic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid , azelaic acid, azelaic acid, fumaric acid, maleic acid, tartaric acid, diglycolic acid, dimer acid, levulinic acid, lactic acid, acrylic acid, benzoic acid, salicylic acid, anisic acid (anisic acid), citric acid, picolinic acid Wait.

非解離性之含鹵素化合物列舉為2,3-二溴丙醇、2,3-二溴丁二醇、1,4-二溴-2-丁醇、三溴新戊醇等溴化醇；1,3-二氯-2-丙醇、1,4-二氯-2-丁醇等氯化醇；3-氟兒茶酚等氟化醇；其他類似該之化合物。 The non-dissociable halogen-containing compound is exemplified by a brominated alcohol such as 2,3-dibromopropanol, 2,3-dibromobutanediol, 1,4-dibromo-2-butanol or tribromoneopentyl alcohol; a chlorinated alcohol such as 1,3-dichloro-2-propanol or 1,4-dichloro-2-butanol; a fluorinated alcohol such as 3-fluorocatechol; and other compounds similar thereto.

解離型之含鹵素化合物列舉為甲胺、二甲胺、三甲胺、乙胺、二乙胺、三乙胺、正丙胺、二正丙胺、三正丙胺、異丙胺、二異丙胺、丁胺、二丁胺、三丁胺、環己胺、單乙醇胺、二乙醇胺、三乙醇胺等碳數較小之胺之氫氯酸鹽及氫溴酸鹽；咪唑、2-甲基咪唑、2-乙基咪唑、2-甲基-4-甲基咪唑、2-甲基-4-乙基咪唑、2-乙基-4-乙基咪唑、2-丙基咪唑、2-丙基-4-丙基咪唑等咪唑之氫氯酸鹽及氫溴酸鹽等。 Dissociated halogen-containing compounds are exemplified by methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, n-propylamine, di-n-propylamine, tri-n-propylamine, isopropylamine, diisopropylamine, butylamine, Hydrochloric acid hydrochloride and hydrobromide salt of a small carbon amine such as dibutylamine, tributylamine, cyclohexylamine, monoethanolamine, diethanolamine or triethanolamine; imidazole, 2-methylimidazole, 2-ethyl Imidazole, 2-methyl-4-methylimidazole, 2-methyl-4-ethylimidazole, 2-ethyl-4-ethylimidazole, 2-propylimidazole, 2-propyl-4-propyl Imidazole such as imidazole, hydrochloride and hydrobromide.

觸變劑列舉為飽和脂肪酸醯胺、飽和脂肪酸雙醯胺類；二聯苯胺山梨糖醇類；硬化蓖麻油等。 The thixotropic agent is exemplified by a saturated fatty acid decylamine, a saturated fatty acid biguanide; a diphenylamine sorbitol; a hardened castor oil.

溶劑列舉為己基二甘醇、(2-乙基己基)二甘醇、苯基二甘醇、丁基卡必醇、辛二醇、α松油醇(terpineol)、β松油醇、四乙二醇二甲醚、偏苯三酸參(2-乙基己基)酯、癸二酸雙(2-乙基己基)酯等。 The solvents are listed as hexyl diglycol, (2-ethylhexyl) diethylene glycol, phenyl diglycol, butyl carbitol, octanediol, terpineol, beta terpineol, tetraethyl Diol dimethyl ether, trimellitic acid ginate (2-ethylhexyl) ester, bismuth (2-ethylhexyl) sebacate, and the like.

助焊劑中之樹脂成分之含量為30質量%~50質量%，較好為40質量%~50質量%。 The content of the resin component in the flux is 30% by mass to 50% by mass, preferably 40% by mass to 50% by mass.

助焊劑中之活性劑含量為0.1質量%~5質量%，較好為0.5質量%~3質量%。 The content of the active agent in the flux is from 0.1% by mass to 5% by mass, preferably from 0.5% by mass to 3% by mass.

助焊劑中之觸變劑含量為0質量%~10質量%，較好 為3質量%~8質量%。 The content of the thixotropic agent in the flux is 0% by mass to 10% by mass, preferably It is 3 mass% to 8 mass%.

助焊劑中之溶劑含量為30質量%~65質量%，較好為40質量%~60質量%。 The solvent content in the flux is 30% by mass to 65% by mass, preferably 40% by mass to 60% by mass.

焊料粉末與助焊劑之混合比率係以使助焊劑之混合量(混合比率)成為75體積%~93體積%之方式設定。助焊劑之混合量較好為75體積%~89體積%。 The mixing ratio of the solder powder and the flux is set such that the mixing amount (mixing ratio) of the flux is from 75% by volume to 93% by volume. The fluxing amount is preferably from 75% by volume to 89% by volume.

亦即，該焊料膏14與通常之焊料凸塊形成用之焊料膏所用之焊料粉末不同，平均粒徑較小，且助焊劑之混合比率(混合量)亦較大。 That is, the solder paste 14 is different from the solder powder used for the solder paste for forming a normal solder bump, and has a small average particle diameter and a large mixing ratio (mixing amount) of the flux.

以埋入開口部12內之方式塗佈焊料膏14，接著以去除模板遮罩13時，具有以模板遮罩13之厚度量自阻劑層11之開口部12稍向上方突出之狀態之方式，塗佈焊料膏14。該焊料膏14之塗佈量期望為使塗佈厚度成為5μm~30μm之量。此處，所謂焊料膏14之塗佈厚度係自阻劑層11之上面突出之部分之厚度，塗佈厚度較好為5~20μm。 The solder paste 14 is applied so as to be embedded in the opening 12, and then, when the template mask 13 is removed, the opening portion 12 of the resist layer 11 is slightly protruded upward by the thickness of the template mask 13. Applying solder paste 14. The amount of the solder paste 14 to be applied is desirably such that the coating thickness is 5 μm to 30 μm. Here, the coating thickness of the solder paste 14 is a thickness of a portion protruding from the upper surface of the resist layer 11, and the coating thickness is preferably 5 to 20 μm.

(焊料球搭載步驟) (solder ball mounting step)

焊料膏14未乾燥之前，使用焊料球搭載機(圖示省略)，將焊料球15搭載於焊料膏14上(圖1(c))。如前述，於基板1上之阻劑層11中形成複數個開口部12，於各開口部12搭載焊料球15。 Before the solder paste 14 is not dried, the solder ball 15 is mounted on the solder paste 14 by using a solder ball mounting machine (not shown) (Fig. 1 (c)). As described above, a plurality of openings 12 are formed in the resist layer 11 on the substrate 1, and the solder balls 15 are mounted on the openings 12.

作為該焊料球15，雖隨著凸塊間之間距(距離)而定，但例如可使用球徑為70μm~90μm之焊料球。 The solder ball 15 is determined by the distance (distance) between the bumps. For example, a solder ball having a ball diameter of 70 μm to 90 μm can be used.

將該焊料球15搭載於焊料膏14上時，因其重量，而如圖1(c)所示般成為焊料球15之一部分沉入焊料膏14內之狀態。焊料膏14由於具有黏著性，故焊料膏14黏著於焊料球15之下面。藉此，使焊料球15暫時固定於焊料膏14上。又，焊料膏14通常未乾燥固化，而如前述般，藉焊料膏14之黏著性，暫時固定焊料球15。 When the solder ball 15 is mounted on the solder paste 14, the solder ball 15 is partially filled in the solder paste 14 as shown in FIG. 1(c). Since the solder paste 14 has adhesiveness, the solder paste 14 adheres to the underside of the solder ball 15. Thereby, the solder ball 15 is temporarily fixed to the solder paste 14. Further, the solder paste 14 is usually not dried and cured, and as described above, the solder balls 15 are temporarily fixed by the adhesion of the solder paste 14.

(回焊處理步驟) (reflow processing step)

接著，進行回焊處理，加熱焊料膏14及焊料球15使之熔融。該回焊處理係在氮氣氛圍、低氧氛圍、或還原氛圍中加熱。加熱溫度(回焊處理溫度)係設定在比焊料球及焊料膏所用之焊料之熔點(液相線溫度)高30℃~50℃之溫度。 Next, a reflow process is performed, and the solder paste 14 and the solder ball 15 are heated and melted. The reflow process is heated in a nitrogen atmosphere, a low oxygen atmosphere, or a reducing atmosphere. The heating temperature (reflow processing temperature) is set at a temperature higher by 30 ° C to 50 ° C than the melting point (liquidus temperature) of the solder used for the solder ball and the solder paste.

回焊處理中，焊料膏14中所含之助焊劑將焊料膏14中之焊料粉末及焊料球15表面之氧化膜或髒污去除，隨後經熔融之焊料粉末或焊料球15濡濕電極，而形成凸塊。 In the reflow process, the flux contained in the solder paste 14 removes the solder powder in the solder paste 14 and the oxide film or dirt on the surface of the solder ball 15, and then wets the electrode by melting the solder powder or the solder ball 15. Bump.

藉由該回焊處理，如圖1(d)所示，於基板1之電極焊墊2上形成焊料凸塊3，形成凸塊電極10。 By this reflow process, as shown in FIG. 1(d), solder bumps 3 are formed on the electrode pads 2 of the substrate 1, and the bump electrodes 10 are formed.

又，該回焊處理步驟中，到達回焊處理溫度(焊料之熔點(液相線溫度)+30℃~50℃)之升溫曲線亦可成為二階段以上之溫度曲線之方式加熱，亦可應用在溫度到達焊料熔融溫度前之間，伴有在比焊料熔融溫度低之溫度保持特定時間之預熱處理的溫度曲線。 Further, in the reflow processing step, the temperature rise curve reaching the reflow processing temperature (the melting point of the solder (liquidus temperature) + 30 ° C to 50 ° C) may be heated as a temperature curve of two or more stages, and may also be applied. A temperature profile of the preheat treatment maintained at a temperature lower than the melting temperature of the solder for a certain period of time before the temperature reaches the melting temperature of the solder.

據此，由於利用焊料膏之黏著力暫時固定焊料球，故可安定地搭載焊料球。且，回焊處理亦與僅以助焊劑暫時固定焊料球之情況不同，由於焊料膏中之焊料粉熔融而與焊料球一體化，故焊料球不會滾落。 According to this, since the solder ball is temporarily fixed by the adhesion of the solder paste, the solder ball can be stably placed. Further, unlike the case where the solder ball is temporarily fixed by the flux, the solder reflow process is integrated with the solder ball because the solder powder in the solder paste is melted, so that the solder ball does not roll off.

該情況下，由於焊料膏中之焊料粉末之平均粒徑較小而為0.1μm~10μm，故塗佈焊料膏時之厚度(塗佈厚度)產生之差異較少，亦可防止孔洞之產生。又，由於焊料膏中之助焊劑之混合比率(混合量)較大，同樣地，塗佈厚度產生之差異較少。 In this case, since the average particle diameter of the solder powder in the solder paste is as small as 0.1 μm to 10 μm, the difference in thickness (coating thickness) when the solder paste is applied is small, and generation of voids can be prevented. Further, since the mixing ratio (mixing amount) of the flux in the solder paste is large, similarly, the difference in coating thickness is small.

據此，可減小利用回焊處理所得之焊料凸塊之高度差異，有利於高密度安裝。 According to this, the difference in height of the solder bumps obtained by the reflow process can be reduced, which is advantageous for high-density mounting.

[實施例] [Examples]

焊料球及球固定用之焊料膏係使用相同焊料種(焊料合金)。使用Sn-3.0質量%Ag-0.5質量%Cu(簡稱為SAC305)、Sn-0.7質量%Cu、或Pb-63質量%Sn作為焊料合金。使用具有表1所示平均粒徑之焊料粉末，以表1之助焊劑之混合比率混合焊料粉末與助焊劑，製作焊料膏。於厚度20μm之阻劑層上形成2000個直徑75μm之開口部。於該等開口部內塗佈焊料膏。接著，搭載直徑為90μm之焊料球。該焊料球具有與球固定用焊料膏中之焊料粉末相同之阻成。 The solder paste and the solder paste for ball fixing use the same solder species (solder alloy). As a solder alloy, Sn-3.0 mass% Ag-0.5 mass% Cu (abbreviated as SAC305), Sn-0.7 mass% Cu, or Pb-63 mass% Sn was used. Using the solder powder having the average particle diameter shown in Table 1, the solder powder and the flux were mixed at the mixing ratio of the flux of Table 1 to prepare a solder paste. 2000 openings of 75 μm in diameter were formed on the resist layer having a thickness of 20 μm. A solder paste is applied to the openings. Next, a solder ball having a diameter of 90 μm was mounted. This solder ball has the same resistance as the solder powder in the solder paste for ball fixation.

接著，在氮氣氛圍下，在比焊料之熔點高30℃之溫度下施以60秒之回焊處理步驟。隨後，確認焊料 球是否滾落，同時測定焊料凸塊之高度差異。 Next, a reflow treatment step of 60 seconds was applied at a temperature 30 ° C higher than the melting point of the solder under a nitrogen atmosphere. Subsequently, confirm the solder Whether the ball rolls off and measures the difference in height of the solder bumps.

焊料球之滾落狀態稱為缺漏(missing)，產生5個以上之該缺漏之試料評價為(D)(差)。產生1~4個缺漏之試料評價為C(普通)。未產生缺漏之試料為B(良好)。 The rolled-out state of the solder ball is referred to as "missing", and the sample in which five or more of the leaks are generated is evaluated as (D) (difference). The sample which produced 1 to 4 missing samples was evaluated as C (ordinary). The sample that did not produce a leak was B (good).

焊料凸塊之高度差異係如下述評價。測定各焊料凸塊之高度，求出其標準偏差σ。3σ之值未達10μm之試料評價為A(極佳)。3σ之值為10μm以上且未達15μm，且見到焊料凸塊之高度稍有差異之試料評價為B(良好)。3σ之值為15μm以上之試料評價為C(普通)。 The difference in height of the solder bumps is as follows. The height of each solder bump was measured, and the standard deviation σ was obtained. The sample having a value of 3σ of less than 10 μm was evaluated as A (excellent). The sample having a value of 3σ of 10 μm or more and less than 15 μm and having a slight difference in the height of the solder bump was evaluated as B (good). The sample having a value of 3σ of 15 μm or more was evaluated as C (ordinary).

該等結果示於表1。又，表1中之“焊料粉末之熔點”為構成焊料粉末之焊料合金之熔點。 These results are shown in Table 1. Further, the "melting point of the solder powder" in Table 1 is the melting point of the solder alloy constituting the solder powder.

如該表1所示，於焊料膏上搭載焊料球且藉由回焊處理，可防止焊料球滾落之發生。且，藉由調整焊料粉末之平均粒徑與助焊劑之混合量，可進一步抑制焊料球之滾落，且可抑制焊料球之凸塊之高度差異。 As shown in Table 1, solder balls were placed on the solder paste and the solder ball was rolled back to prevent the solder balls from rolling off. Further, by adjusting the mixing amount of the average particle diameter of the solder powder and the flux, the rolling off of the solder balls can be further suppressed, and the difference in height of the bumps of the solder balls can be suppressed.

又，本發明並不受限於上述實施形態，在不脫離本發明要件之範圍內可進行各種變更。 Further, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention.

[產業上之可利用性] [Industrial availability]

藉由本實施形態之焊料凸塊之形成方法及焊料球固定用焊料膏，可以簡便之方法暫時固定焊料球，且可防止焊料球滾落。且，可抑制焊料凸塊之高度差異。藉此，可以高良率形成精度良好之焊料凸塊(內凸塊、外凸塊)。據此，本實施形態之焊料凸塊之形成方法及焊料球固定用焊料膏可適當地使用於覆晶安裝之步驟中。 According to the method for forming a solder bump of the present embodiment and the solder paste for solder ball fixing, the solder ball can be temporarily fixed by a simple method, and the solder ball can be prevented from rolling off. Moreover, the difference in height of the solder bumps can be suppressed. Thereby, it is possible to form solder bumps (inner bumps, outer bumps) with high precision with high yield. Accordingly, the method of forming the solder bump of the present embodiment and the solder paste for solder ball fixing can be suitably used in the step of flip chip mounting.

1‧‧‧基板 1‧‧‧Substrate

2‧‧‧電極焊墊 2‧‧‧Electrode pads

3‧‧‧焊料凸塊 3‧‧‧ solder bumps

10‧‧‧凸塊電極 10‧‧‧Bump electrode

11‧‧‧阻劑層 11‧‧‧Resist layer

12‧‧‧開口部 12‧‧‧ openings

13‧‧‧模板遮罩 13‧‧‧Template mask

14‧‧‧焊料膏 14‧‧‧ solder paste

15‧‧‧焊料球 15‧‧‧ solder balls

Claims (4)

一種焊料凸塊之形成方法，其特徵為具有下列步驟：將焊料膏塗佈於基板之電極上，且於前述焊料膏上搭載焊料球而暫時固定之步驟，及隨後，回焊處理前述焊料膏及前述焊料球之步驟。 A method for forming a solder bump, comprising the steps of: applying a solder paste on an electrode of a substrate, temporarily mounting the solder ball on the solder paste, and subsequently, reflowing the solder paste And the steps of the aforementioned solder balls. 如請求項1之焊料凸塊之形成方法，其中前述焊料膏含有焊料粉末，且前述焊料粉末之平均粒徑為0.1μm~10μm。 The method of forming a solder bump according to claim 1, wherein the solder paste contains solder powder, and the solder powder has an average particle diameter of 0.1 μm to 10 μm. 如請求項1或2之焊料凸塊之形成方法，其中前述焊料膏含有助焊劑，前述焊料膏中之前述助焊劑之混合量為75體積%~93體積%。 The method of forming a solder bump according to claim 1 or 2, wherein the solder paste contains a flux, and a flux of the flux in the solder paste is 75 to 93% by volume. 一種焊料球固定用焊料膏，其特徵係含有焊料粉末與助焊劑，前述焊料粉末之平均粒徑為0.1μm~10μm，前述助焊劑之混合量為75體積%~93體積%。 A solder paste for solder ball fixing characterized by containing a solder powder and a flux, wherein the solder powder has an average particle diameter of 0.1 μm to 10 μm, and the flux is mixed at 75 vol% to 93 vol%.
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