CN111725081A - Preparation method of SOPs (silicon on insulator) with different sizes for plastic-packaged flip-chip bonded substrate - Google Patents
Preparation method of SOPs (silicon on insulator) with different sizes for plastic-packaged flip-chip bonded substrate Download PDFInfo
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- CN111725081A CN111725081A CN202010514730.9A CN202010514730A CN111725081A CN 111725081 A CN111725081 A CN 111725081A CN 202010514730 A CN202010514730 A CN 202010514730A CN 111725081 A CN111725081 A CN 111725081A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 9
- 239000010703 silicon Substances 0.000 title claims abstract description 9
- 238000005476 soldering Methods 0.000 claims abstract description 81
- 230000004907 flux Effects 0.000 claims abstract description 60
- 229910000679 solder Inorganic materials 0.000 claims abstract description 59
- 238000003466 welding Methods 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 46
- 238000007639 printing Methods 0.000 claims abstract description 39
- 230000008569 process Effects 0.000 claims abstract description 23
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- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
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- 239000002131 composite material Substances 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
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- 230000007774 longterm Effects 0.000 abstract description 8
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- 238000001035 drying Methods 0.000 description 6
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- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/111—Manufacture and pre-treatment of the bump connector preform
- H01L2224/1111—Shaping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
- H01L2224/1132—Screen printing, i.e. using a stencil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13005—Structure
- H01L2224/13008—Bump connector integrally formed with a redistribution layer on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1301—Shape
- H01L2224/13016—Shape in side view
- H01L2224/13018—Shape in side view comprising protrusions or indentations
- H01L2224/13019—Shape in side view comprising protrusions or indentations at the bonding interface of the bump connector, i.e. on the surface of the bump connector
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- Engineering & Computer Science (AREA)
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Abstract
The invention relates to a preparation method of SOPs (silicon on insulator) with different sizes for a plastic-packaged flip chip bonded substrate, which comprises the following steps of: step 1, performing soldering flux printing on all bonding pads; step 2, selecting the required size of the solder balls according to the size of the solder pads, and dividing the solder pads into a plurality of groups; for a group of bonding pads, placing the substrate printed with the soldering flux under a ball placing screen plate corresponding to the group of bonding pads, and placing the solder balls corresponding to the group of bonding pads on the group of bonding pads in a leakage manner through the corresponding ball placing screen plate; step 3, after the solder balls are leaked on the bonding pads, placing the substrate in a reflow oven for reflow soldering to form spherical solder joints; step 4, repeating the steps 1 to 3 until each group of bonding pads are traversed, and forming corresponding spherical welding spots on each group of bonding pads; step 5, cleaning the substrate with the prepared welding spots to remove residual soldering flux; and 6, leveling all the spherical welding points. The method of the invention improves the welding quality of the high-density plastic package flip-chip welding process and ensures the long-term reliability of the plastic package flip-chip welding device.
Description
Technical Field
The invention relates to a preparation method of a package substrate SOP (silicon on insulator), in particular to a preparation method of an SOP on a flip chip bonding pad of a plastic package flip chip bonding substrate, belonging to the technical field of semiconductor packaging.
Background
The flip chip bonding technology is characterized in that interconnection salient points are prepared on an active surface of a chip, are arranged in an area array, have a series of advantages of high interconnection density, high reliability and the like, and are applied to the fields with high reliability requirements, such as electric power, military industry, space navigation and the like in a large scale. Along with the performance of the plastic package flip chip device is continuously improved, the density of the interconnected salient points is sharply improved, the total number of the salient points of a single chip can reach more than 10000, the welding quality and the welding consistency of the salient points in the reflow soldering process are difficult to ensure, the insufficient soldering phenomenon is easy to occur, and serious hidden danger is brought to the long-term reliability of the plastic package flip chip device.
In addition, the increase of the interconnection density inevitably leads to the drastic reduction of the size of the bump, and the small-sized bump is faced with more serious reliability problem after interconnection. On one hand, the reduced size of the salient points can cause the reduction of the welding strength of the salient points and influence the integral welding quality of the chip, and particularly in the stress strain concentration area at the corner of the device, the probability of fatigue cracking of the small-size salient points is extremely high, and the long-term reliability of the device can be influenced; on the other hand, the size effect is obvious due to the reduction of the size of the bump, the proportion of IMC (intrinsic memory) at the welding interface to the bump is increased sharply, and particularly, the long-term reliability of the bump is seriously affected by the fact that the welding point is completely converted into IMC under the thermal environment such as high-temperature storage.
At present, the SOP is prepared on the flip-chip bonding pad of the plastic package substrate by adopting a screen printing mode in the industry, so that the chip bump and the SOP are welded, the process difficulty is reduced, and the welding quality is improved. However, the screen printing mode cannot prepare SOPs with different sizes, and the problem of low reliability of small-size bumps in individual areas cannot be solved, so that the development of a method for preparing SOPs with different sizes for a flip chip bonding substrate is of great significance for improving the process quality and the long-term reliability of a plastic flip chip bonding device.
Disclosure of Invention
The technical problem solved by the invention is as follows: the defects of the prior art are overcome, the different-size SOP preparation method for the plastic package flip-chip bonding substrate is provided, the method is suitable for a plastic package flip-chip bonding packaging process, can be compatible with flip-chip bonding packaging shells of various different packaging sizes and different SOP materials, has the characteristics of simple process, high size accuracy and the like, can obviously improve the welding quality of a high-density flip-chip bonding process, solves the problems of low welding strength, poor reliability and the like of small-size bump welding, and further ensures the long-term reliability of a flip-chip bonding device.
The technical scheme of the invention is as follows: a preparation method of SOPs (silicon on insulator) with different sizes for a plastic-packaged flip chip bonding substrate comprises the following steps:
(1) placing a substrate under a soldering flux printing screen plate, wherein a large number of soldering pads with different specifications are arranged on the substrate, coating soldering flux on the soldering flux printing screen plate, and performing soldering flux printing on all the soldering pads;
(2) selecting the size of a required solder ball according to the size of the bonding pad, and dividing the bonding pad into a plurality of groups; each group of bonding pads is in the same specification, and is provided with the same size of welding balls, and each specification of bonding pads corresponds to one ball placing screen plate; for a group of bonding pads, placing the substrate printed with the soldering flux under a ball placing screen plate corresponding to the group of bonding pads, and placing the solder balls corresponding to the group of bonding pads on the group of bonding pads in a leakage manner through the corresponding ball placing screen plate;
(3) after the solder balls are leaked on the bonding pads, placing the substrate in a reflow oven for reflow soldering to form spherical solder points;
(4) repeating the steps (1) to (3) until each group of bonding pads is traversed, and forming corresponding spherical welding points on each group of bonding pads;
(5) and cleaning the substrate with the prepared welding spots to remove the residual soldering flux.
(6) And leveling all the spherical welding points.
Preferably, a large number of pads with different specifications are arranged on the substrate, specifically: the circular bonding pads are arranged on the substrate and prepared in a nickel-gold or nickel-palladium-gold chemical plating mode, the diameter range of the bonding pads is preferably 70-150 mu m, and the spacing range of the bonding pads is preferably 120-150 mu m, so that the preparation effect is further improved.
Preferably, each soldering flux printing screen plate is provided with a plurality of round holes with uniform specifications, and soldering flux can be leaked to the soldering pads.
Preferably, the substrate is a multilayer composite structure organic flip chip substrate and comprises a core board, a wiring layer and a solder mask layer; the core board is preferably 400-800 microns in thickness, the wiring layers are arranged on the core board, the number of the wiring layers is 3-6, the thickness of each layer is preferably 15-30 microns, the wiring layers are solder masks, the height of each solder mask is preferably 30-50 microns, openings of the pads are formed in the solder masks, the openings are circular, the diameter of each opening is preferably 50-80 microns, and the preparation effect is further improved.
Preferably, the bonding pad is of a Ni-Au structure and comprises a Ni layer and an Au layer, the bonding pad is prepared by adopting an electroplating process, the Au layer is arranged on the Ni layer, the thickness of the Ni layer is preferably more than 2.54 microns, and the thickness of the Au layer is preferably 0.02-0.3 microns, so that the preparation effect is further improved.
Preferably, the soldering flux is water-soluble rosin-based soldering flux;
preferably, the soldering flux printing screen plate is prepared by adopting an electroforming process, round holes with the same size are processed on the screen plate, the positions of the round holes correspond to the positions of the bonding pads on the substrate, which need to be subjected to soldering flux printing, one by one, and the diameter of each round hole is preferably 70% -90% of the diameter of each bonding pad;
preferably, the solder ball composition preferably includes: the diameter of the solder ball of the tin-based materials such as PbSn, SnAg and SnAgCu is preferably 80-120% of the diameter of the bonding pad, so that the preparation effect is further improved.
Preferably, the ball placing screen plate is prepared by adopting an electroforming process, a protective coating is coated on one side facing the substrate, the same round holes with a certain size are processed on the screen plate, the positions of the round holes correspond to the positions of the pads on the substrate, which need to be subjected to solder ball leakage, of the solder balls one by one, the diameter of each round hole is 110% -130% of the diameter of each solder ball, the pressure of a ball placing device and the distance between the ball placing screen plate and the substrate need to be adjusted during ball placing, the pressure of the ball placing device is preferably 0.1-0.5 MPa, the distance between the ball placing screen plate and the substrate is preferably 30-50 microns, and the preparation effect.
Compared with the prior art, the invention has the advantages that:
(1) the invention adopts the process of 'soldering flux printing-ball placing-refluxing-leveling' to prepare the SOP, and has simple process and high maturity;
(2) the invention adopts the screen plates with different specifications to place balls, the distance between the ball placing screen plate and the substrate is adjustable, the preparation of SOPs with different sizes is realized by repeatedly placing the balls, and the SOPs with the existing sizes are not influenced.
(3) The invention adopts a leveling mode to treat the SOP surface, and ensures that the coplanarity of SOPs with different sizes meets the requirements of technological indexes.
Drawings
FIG. 1 is a schematic view of a plastic flip-chip bonded substrate structure;
FIG. 2 is a schematic view of flux printing;
FIG. 3 is a schematic view of solder ball missing;
FIG. 4 is a schematic diagram of a ball after reflow;
FIG. 5 is a schematic view of solder ball missing in another specification;
FIG. 6 is a schematic view of another specification of solder balls after reflow;
FIG. 7 is a schematic diagram of the SOP after planarization;
Detailed Description
The invention is described in further detail below with reference to the figures and specific embodiments.
The invention relates to a preparation method of SOPs (silicon on insulator) with different sizes for a plastic-packaged flip chip bonded substrate, which comprises the following steps of: step 1, placing a substrate under a soldering flux printing screen plate, wherein a large number of soldering pads with different specifications are arranged on the substrate, coating soldering flux on the soldering flux printing screen plate, and performing soldering flux printing on all the soldering pads; step 2, selecting the required size of the solder balls according to the size of the solder pads, and dividing the solder pads into a plurality of groups; each group of bonding pads is in the same specification, and is provided with the same size of welding balls, and each specification of bonding pads corresponds to one ball placing screen plate; for a group of bonding pads, placing the substrate printed with the soldering flux under a ball placing screen plate corresponding to the group of bonding pads, and placing the solder balls corresponding to the group of bonding pads on the group of bonding pads in a leakage manner through the corresponding ball placing screen plate; step 3, after the solder balls are leaked on the bonding pads, placing the substrate in a reflow oven for reflow soldering to form spherical solder joints; step 4, repeating the steps 2 and 3 until each group of bonding pads are traversed, and forming corresponding spherical welding points on each group of bonding pads; step 5, cleaning the substrate with the prepared welding spots to remove residual soldering flux; and 6, leveling all the spherical welding points. The method of the invention improves the welding quality of the high-density plastic package flip-chip welding process and ensures the long-term reliability of the plastic package flip-chip welding device.
The invention relates to a preparation method of SOP on a flip chip bonding pad of a plastic package flip chip bonding substrate, which is used for realizing interconnection of a chip bump and the substrate in a flip chip bonding device. The traditional screen printing mode can only prepare SOPs with the same specification, the preparation of SOPs with different specifications on the plastic package substrate can be realized by adopting the method, the preparation process is simple, the yield is high, the problem of low reliability of small-size bumps in individual areas in the plastic package flip chip bonding device can be solved, and the process quality and the long-term reliability of the plastic package flip chip bonding device are improved.
The invention relates to a preparation method of SOPs (silicon on insulator) with different sizes for a plastic-packaged flip chip bonding substrate, which adopts the following steps:
(1) the substrate is provided with circular pads, the pads are prepared by adopting a nickel gold or nickel palladium gold plating mode and the like, the diameter of each pad is preferably 70-150 mu m, and the space between every two pads is preferably 120-150 mu m, as shown in figure 1. The substrate is placed below a soldering flux printing screen plate, as shown in figure 2, the distance between the substrate and the soldering flux printing screen plate is 30-50 microns, then the soldering flux is coated on the surface of the printing screen plate, in order to guarantee coating quality and consistency, the flux amount is preferably larger than 100g, the printing pressure is preferably 0.1-0.5 MPa, and the printing speed is preferably 10-20 mm/s.
(2) According to the size of the bonding pad, the size of the required solder ball is selected, the bonding pad is divided into a plurality of groups, and the product requirements are combined, preferably 2-3 groups. Each group of bonding pads is in the same specification, and is provided with the same size of welding balls, and each specification of bonding pads corresponds to one ball placing screen plate;
for a group of bonding pads, placing the substrate printed with the soldering flux under a ball placing screen plate corresponding to the group of bonding pads, as shown in fig. 3, enabling the open pores of the ball placing screen plate to correspond to the bonding pad positions on the substrate where solder balls need to be leaked, wherein the distance between the ball placing screen plate and the substrate is preferably 30-50 μm, and the pressure of a ball placing device is preferably 0.1-0.5 MPa, so that the solder balls corresponding to the group of bonding pads are leaked on the group of bonding pads through the corresponding ball placing screen plate to realize ball placing;
(3) after the solder balls are placed on the solder pads in a leaking mode, the substrate is placed in a reflow furnace for reflow soldering, the reflow peak temperature, the reflow time and the reflow atmosphere are controlled, the peak temperature is set by combining the components of the solder balls, the peak temperature is preferably higher than the melting point of the solder balls by more than 30 ℃, the reflow time is preferably 60-90 s, so that the solder balls are fully melted and well soldered with the solder pads, the reflow atmosphere is nitrogen, the wettability of the melted solder balls and the substrate is improved, the ball-shaped solder points are formed after reflow soldering, and the prepared SOP (spherical solder points on the solder pads) is obtained, and the height is H, and is shown in FIG. 4;
(4) repeating the steps (1) - (3), adjusting the heights between the soldering flux printing screen plate and the ball placing screen plate and the substrate to be 3-5 times of the height of the prepared SOP during the second soldering flux printing and ball placing to prevent the prepared SOP from being damaged by the soldering flux printing screen plate or the ball placing screen plate until the soldering flux printing screen plate or the ball placing screen plate traverses each group of soldering pads, and forming corresponding spherical soldering points on each group of soldering pads as shown in FIGS. 5-6;
(5) cleaning the substrate with the prepared spherical welding spots, spraying the substrate with a water-based cleaning solution in a heating state, preferably setting the temperature to be 50-70 ℃ for ensuring the activity of the water-based cleaning solution, preferably setting the spraying pressure to be 30-50 Psi, preferably setting the spraying time to be 10-15 minutes, and then drying, preferably setting the drying temperature to be 50-70 ℃ and preferably setting the drying time to be 5-10 minutes.
(6) And leveling all the spherical welding points, and adopting a leveling tool to contact the spherical welding points, wherein the tool size diameter is preferably 30-50 mu m, and the contact pressure is preferably 0.1-0.5 MPa, as shown in figure 7.
Through the steps, the preparation of the SOP with various specifications on the plastic package substrate is realized, the consistency of the SOP process is effectively ensured, the preparation process is simple, and the yield is high.
The invention realizes the further proposal of improving the quality of the SOP preparation: when the steps (1) to (3) are repeated in the step (4), when secondary soldering flux printing and ball placement are carried out, the distance between the printing screen plate or the ball placement screen plate and the substrate (the surface of the solder resist layer) is set to be L, the height of the prepared SOP is set to be H, the ball placement pressure is set to be P (ball placement pressure means that the solder balls are conveyed to the ball placement screen plate through a brush carrying the solder balls, the pressure applied to the ball placement screen plate by the brush is defined as the ball placement pressure), and the pressure preferably satisfies P2×L<H/L<1, the optimal constraint condition is met, the SOP preparation quality can be further improved, and the flip-chip bonding process quality and reliability are further improved.
The invention relates to a preparation method of SOPs (silicon on insulator) with different sizes for a plastic-packaged flip chip bonded substrate, which further comprises the following steps of:
(1) fig. 1 is a schematic structural diagram of a plastic package substrate in an embodiment of the present invention, in which 1 is a bonding pad of a substrate, which is prepared by a chemical plating process and has a Ni — Au structure, 2 is a solder resist layer which plays a role in protecting the bonding pad, and 3 is the entire substrate;
placing the substrate 3 below the soldering flux printing screen 4 to enable the round holes 5 on the soldering flux printing screen 4 to correspond to the positions of the soldering pads 1 one by one, and adjusting the distance between the substrate 3 and the soldering flux printing screen 4 to enable all the soldering pads 1 on the substrate 3 to be uniformly coated with soldering flux;
(2) removing the soldering flux printing screen plate 4, placing the substrate 3 printed with the soldering flux below the ball placing screen plate 6, enabling the round holes 7 on the ball placing screen plate 6 to correspond to the positions of the bonding pads 1 one by one, and placing the welding balls 8 of one size specification on the bonding pads 1 in a leaking mode through the round holes 7;
(3) placing the substrate 3 with the placed balls in a reflow oven for reflow soldering, forming spherical solder points 9 on the bonding pads 1 after the soldering is completed, and setting the height of the spherical solder points as H, (the height of the solder points 9 is 90 μm after the height detection)
(4) Repeating the steps (1) to (3) until each group of bonding pads is traversed and corresponding spherical welding points are formed on each group of bonding pads, wherein the preferred scheme is as follows:
placing the substrate with the formed welding spots 9 below a soldering flux printing screen plate 4 of another specification, enabling round holes 5 on the soldering flux printing screen plate 4 to correspond to the positions of the welding pads 1 of the other specification one by one, setting the distance between the substrate 3 and the soldering flux printing screen plate 4 to be 400 micrometers, and setting the soldering flux printing pressure to be 0.1MPa, so that the welding pads 1 of the other specification on the substrate 3 are uniformly coated with soldering flux;
the substrate 3 is placed under the ball placing screen plate 6 with another specification, the round holes 7 on the ball placing screen plate 6 are in one-to-one correspondence with the positions of the bonding pads 1 with another specification, the distance between the substrate 3 and the ball placing screen plate 6 is set to be 400 micrometers, the ball placing pressure is set to be 0.1MPa, and the solder balls 8 with another specification are placed above the bonding pads 1 in a leaking mode through the round holes 7 on the ball placing screen plate 6.
When the steps (1) to (3) are repeated in the step (4), and more than two times of soldering flux printing and ball placing are carried out, the preferable scheme is as follows: the height of the welding spots 9, the distance between the soldering flux printing screen plate 4 and the substrate 3, the distance between the ball placing screen plate 6 and the substrate 3 and the ball placing pressure value satisfy the optimized formula P2×L<H/L<1, effectively ensuring that the prepared welding spot 9 is not damaged and ensuring the quality and the yield of the SOP preparation.
Detecting the appearance and the height of the formed welding spot 9, wherein the height of the formed welding spot 9 is consistent with that of the spherical welding spot 9 in the step (3) (the height of the welding spot 9 is still 90 mu m), and proving that the welding spot 9 is not damaged in the second soldering flux printing and second ball placing process;
until each group of bonding pads is traversed, corresponding spherical welding points are formed on each group of bonding pads;
(5) cleaning the substrate with the prepared spherical welding spots, spraying the substrate with a water-based cleaning solution in a heating state, preferably setting the temperature to be 50-70 ℃ for ensuring the activity of the water-based cleaning solution, preferably setting the spraying pressure to be 30-50 Psi, preferably setting the spraying time to be 10-15 minutes, and then drying, preferably setting the drying temperature to be 50-70 ℃ and preferably setting the drying time to be 5-10 minutes.
(6) And leveling all the spherical welding spots, and adopting a leveling tool to contact the spherical welding spots, wherein the tool size diameter is preferably 30-50 μm, and the contact pressure is preferably 0.1-0.5 MPa, as shown in figure 7, so that the quality and the reliability of the flip-chip welding process are further improved.
All modifications and equivalents of the embodiments of the invention may be made without departing from the spirit and scope of the invention.
The invention adopts the process of 'soldering flux printing-ball placing-refluxing-leveling' to prepare the SOP, and has simple process and high maturity; in addition, the invention adopts the screen plates with different specifications for ball placement, the distance between the ball placement screen plate and the substrate is adjustable, the preparation of SOPs with different sizes is realized by repeatedly placing balls, and the SOPs with the existing sizes are not influenced. In addition, the invention adopts a leveling mode to treat the SOP surface, and ensures that the coplanarity of SOPs with different sizes meets the requirements of technological indexes.
Claims (10)
1. A preparation method of SOPs (silicon on insulator) with different sizes for a plastic-packaged flip chip bonding substrate is characterized by comprising the following steps:
(1) placing a substrate under a soldering flux printing screen plate, wherein a large number of soldering pads with different specifications are arranged on the substrate, coating soldering flux on the soldering flux printing screen plate, and performing soldering flux printing on all the soldering pads;
(2) selecting the size of a required solder ball according to the size of the bonding pad, and dividing the bonding pad into a plurality of groups; each group of bonding pads is in the same specification, and is provided with the same size of welding balls, and each specification of bonding pads corresponds to one ball placing screen plate; for a group of bonding pads, placing the substrate printed with the soldering flux under a ball placing screen plate corresponding to the group of bonding pads, and placing the solder balls corresponding to the group of bonding pads on the group of bonding pads in a leakage manner through the corresponding ball placing screen plate;
(3) after the solder balls are leaked on the bonding pads, placing the substrate in a reflow oven for reflow soldering to form spherical solder points;
(4) repeating the steps (1) to (3) until each group of bonding pads is traversed, and forming corresponding spherical welding points on each group of bonding pads;
(5) cleaning the substrate with the prepared welding spots to remove residual soldering flux;
(6) and leveling all the spherical welding points.
2. The method for preparing the SOPs with different sizes for the plastic packaging flip chip bonding substrate according to claim 1, wherein the method comprises the following steps: be provided with a large amount of pads of different specifications on the base plate, specifically do: the substrate is provided with a circular pad, and the pad is prepared by adopting a nickel-gold or nickel-palladium-gold chemical plating mode.
3. The method for preparing the SOPs with different sizes for the plastic packaging flip chip bonding substrate according to claim 1, wherein the method comprises the following steps: a plurality of round holes with uniform specifications are arranged on each soldering flux printing screen plate, and soldering flux can be leaked to the soldering pads.
4. The method for preparing the SOPs with different sizes for the plastic packaging flip chip bonding substrate according to claim 1, wherein the method comprises the following steps: the substrate is an organic flip chip substrate with a multilayer composite structure and comprises a core board, a wiring layer and a solder mask layer; the core board is provided with a wiring layer, the wiring layer is provided with a solder mask layer, and the solder mask layer is provided with an opening of a welding pad.
5. The method for preparing the SOPs with different sizes for the plastic packaging flip chip bonding substrate according to claim 1, wherein the method comprises the following steps: the bonding pad is of a Ni-Au structure and comprises a Ni layer and an Au layer, the Ni layer and the Au layer are prepared by adopting an electroplating process, and the Au layer is arranged on the Ni layer.
6. The method for preparing the SOPs with different sizes for the plastic packaging flip chip bonding substrate according to claim 1, wherein the method comprises the following steps: the soldering flux is water-soluble rosin-based soldering flux.
7. The method for preparing the SOPs with different sizes for the plastic packaging flip chip bonding substrate according to claim 1, wherein the method comprises the following steps: the soldering flux printing screen plate is prepared by adopting an electroforming process, round holes with the same size are processed on the screen plate, the positions of the round holes correspond to the positions of bonding pads on a substrate, which need to be subjected to soldering flux printing, one by one, and the diameter of each round hole is 70% -90% of the diameter of each bonding pad.
8. The method for preparing the SOPs with different sizes for the plastic packaging flip chip bonding substrate according to claim 1, wherein the method comprises the following steps: the solder ball composition includes: the diameter of the solder ball is 80-120% of the diameter of the bonding pad.
9. The method for preparing the SOPs with different sizes for the plastic packaging flip chip bonding substrate according to claim 1, wherein the method comprises the following steps: the ball placing screen plate is prepared by adopting an electroforming process, and a protective coating is coated on one side facing the substrate.
10. The method for preparing the SOPs with different sizes for the plastic packaging flip chip bonding substrate according to claim 1, wherein the method comprises the following steps: the screen plate is provided with round holes with the same size, the positions of the round holes correspond to the positions of the pads on the substrate, which need to be subjected to solder ball missing, one by one, and the pressure of the ball placing device and the distance between the screen plate and the substrate need to be adjusted during ball placing.
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