TW201609586A - A window substrate and method of chamfering the same - Google Patents

A window substrate and method of chamfering the same Download PDF

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Publication number
TW201609586A
TW201609586A TW104106433A TW104106433A TW201609586A TW 201609586 A TW201609586 A TW 201609586A TW 104106433 A TW104106433 A TW 104106433A TW 104106433 A TW104106433 A TW 104106433A TW 201609586 A TW201609586 A TW 201609586A
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Taiwan
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window substrate
polishing
embossments
etchant
chamfered portion
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TW104106433A
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Chinese (zh)
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朴大出
金鐘敏
朴一雨
李漢培
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東友精細化工有限公司
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Publication of TW201609586A publication Critical patent/TW201609586A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/08Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass
    • B24B9/10Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of plate glass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/24Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
    • B24B7/242Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass for plate glass

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

Disclosed is a window substrate, including: an embossed pattern on a chamfered portion thereof, wherein the number of embosses having a bottom with a long axis length of 5 mm or more is 60% or more to a total number of embosses, thereby capable of suppressing breakage due to significantly improving elongation.

Description

視窗基板及其去角方法Window substrate and its chamfering method

本發明關於一種具有優異伸長率的視窗基板,以及使視窗基板的切割平面去角的方法。The present invention relates to a window substrate having excellent elongation and a method of chamfering a cutting plane of a window substrate.

通常,用於平板顯示器的視窗基板的切割和去角程序是以如下方法進行。Generally, the cutting and chamfering process of a window substrate for a flat panel display is performed as follows.

首先,有一機械切割方法,其包含:藉由讓將金剛石或碳化物雕刻輪劃過玻璃板的表面而將檢查線機械雕刻於玻璃板上;以及接著藉由沿著雕刻的檢查線彎折玻璃板來進行切割,以形成其切割邊緣。通常,在上述機械切割方法中,可能在玻璃板中形成具有深度約100至150 mm的橫向裂縫,其中該裂縫是從雕刻輪的切割線所產生。由於橫向裂縫會降低視窗基板的強度,應該藉由拋光而除去視窗基板的切割部分。First, there is a mechanical cutting method comprising: mechanically engraving an inspection line on a glass plate by letting a diamond or carbide engraving wheel pass over the surface of the glass plate; and then bending the glass by examining the engraved line The plate is cut to form its cutting edge. Generally, in the above mechanical cutting method, it is possible to form a transverse crack having a depth of about 100 to 150 mm in the glass sheet, wherein the crack is generated from the cutting line of the engraving wheel. Since the lateral cracks reduce the strength of the window substrate, the cut portion of the window substrate should be removed by polishing.

接著,有一個使用雷射光束的非接觸式切斷方法,其包括:藉由沿著玻璃表面上的預定路徑移動雷射光束,穿過刻在視窗基板邊緣的檢查線,而展開玻璃表面;緊跟在雷射光束後面用冷卻器延伸玻璃表面;以及熱傳播沿著雷射光束的前進路徑而產生的裂縫來切割視窗基板。Next, there is a non-contact cutting method using a laser beam, comprising: expanding a glass surface by moving a laser beam along a predetermined path on the surface of the glass and passing through an inspection line engraved on the edge of the window substrate; Immediately following the laser beam, the glass surface is extended with a cooler; and heat propagates cracks along the forward path of the laser beam to cut the window substrate.

由於以上述機械切割方法或雷射光束切割的視窗基板的切割平面具有一個尖銳且不均勻的表面(它容易受到外部衝擊而損害),應在其上執行去角程序。       去角程序一般是以兩個步驟來進行,即藉由使旋轉拋光輪與切割平面接觸而細磨來拋光切割部分(也就是使切割部分去角),以及藉由使用侵蝕劑來侵蝕拋光的切割平面,而對其進行加工,以避免例如由於去角部分中存在的細裂縫所產生的邊角破損等現象的發生。Since the cutting plane of the window substrate cut by the above mechanical cutting method or laser beam has a sharp and uneven surface which is easily damaged by external impact, the chamfering process should be performed thereon. The chamfering procedure is generally carried out in two steps, namely by finely grinding the rotating polishing wheel in contact with the cutting plane to polish the cut portion (ie, to chamfer the cut portion), and to erode the polishing by using an etchant. The plane is cut and machined to avoid phenomena such as breakage of corners due to fine cracks present in the chamfered portion.

當進行去角程序時,可改善切割部分的平滑度,從而增加強度至一定程度。然而,難以用傳統去角程序提供具有優異的伸長率的視窗基板。When the chamfering process is performed, the smoothness of the cut portion can be improved, thereby increasing the strength to a certain extent. However, it is difficult to provide a window substrate having excellent elongation using a conventional chamfering program.

同時,韓國專利註冊號No. 0895830揭露一種使用杯形磨輪來切割平面顯示器玻璃基版的邊緣的方法,其亦蒙受惡化的伸長率的問題。At the same time, Korean Patent Registration No. 0895830 discloses a method of cutting the edge of a glass substrate of a flat display using a cup-shaped grinding wheel, which also suffers from a problem of deteriorated elongation.

因此, 本發明的一個目的是提供具有優異伸長率的視窗基板。Accordingly, it is an object of the present invention to provide a window substrate having excellent elongation.

本發明的另一個目的是提供去角視窗基板的方法,該方法能得到具有優異伸長率的視窗基板。Another object of the present invention is to provide a method of dehorning a window substrate which can provide a window substrate having excellent elongation.

本發明的上述目的將可藉由以下特徵來實現:The above objects of the present invention can be achieved by the following features:

(1)視窗基板,包括:在其去角部分上的壓花圖型,其中相對於壓花的總數量,底部具有5 mm或更長的長軸長度的壓花的數量為60%或更多。(1) A window substrate comprising: an embossed pattern on a chamfered portion thereof, wherein the number of embossments having a long axis length of 5 mm or longer at the bottom is 60% or more with respect to the total number of embossments many.

(2) 根據上述(1)所述的視窗基板,其中該去角部分包含壓花圖型,其中相對於壓花的總數量,具有一底部且該底部具有小於5 mm的長軸長度的壓花的數量為2至40%,具有一底部且該底部具有5 mm至10 mm的長軸長度的壓花的數量為20至70%,具有一底部且該底部具有超過10 mm但不超過20 mm的長軸長度的壓花的數量為10至40%,以及具有一底部且該底部具有超過20 mm的長軸長度的壓花的數量為0至20%。(2) The window substrate according to (1) above, wherein the chamfered portion comprises an embossing pattern, wherein the bottom portion has a bottom and the bottom has a long axis length of less than 5 mm with respect to the total number of embossments The number of flowers is 2 to 40%, the number of embossments having a bottom and having a long axis length of 5 mm to 10 mm at the bottom is 20 to 70%, having a bottom and the bottom having more than 10 mm but not exceeding 20 The number of embossments of the long axis length of mm is 10 to 40%, and the number of embossings having a bottom portion and the bottom portion having a long axis length exceeding 20 mm is 0 to 20%.

(3) 根據上述(1)所述的視窗基板,其中該視窗基板該視窗基板是以選自由玻璃、聚醚碸 (PES)、聚丙烯酸酯 (PAR)、聚醚醯亞胺 (PEI)、聚萘二甲酸乙二酯 (PEN)、聚對苯二甲酸乙二酯 (PET)、聚硫化苯 (PPS)、聚芳酯、聚亞醯胺、聚碳酸酯 (PC)、纖維素三醋酸酯 (TAC)、以及醋酸丙酸纖維素 (CAP)組成的一群組的至少其中之一所形成。(3) The window substrate according to (1) above, wherein the window substrate is selected from the group consisting of glass, polyether enamel (PES), polyacrylate (PAR), polyether phthalimide (PEI), Polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polysulfide (PPS), polyarylate, polyamine, polycarbonate (PC), cellulose triacetate At least one of a group consisting of ester (TAC) and cellulose acetate propionate (CAP) is formed.

(4) 根據上述(3)所述的視窗基板,其中該玻璃是強化玻璃。(4) The window substrate according to (3) above, wherein the glass is tempered glass.

(5) 一種使視窗基板去角的方法,包括:藉由使旋轉拋光輪與該視窗基板的切割部分接觸而拋光該切割部分,以及沿著該切割部分以100至800 mm/sec的速度移動該拋光輪;以及以侵蝕劑侵蝕所拋光的切割部分,相對於該侵蝕劑的總重,該侵蝕劑以4至12 wt.%的含量包括含氟化合物,以在如申請專利範圍第1項至第4項任一項所述的視窗基板的去角部分上形成壓花圖型。(5) A method of chamfering a window substrate, comprising: polishing the cut portion by bringing the rotary buffing wheel into contact with a cut portion of the window substrate, and moving at a speed of 100 to 800 mm/sec along the cut portion The polishing wheel; and the dicing portion polished by the erosive agent, the etchant comprising a fluorine-containing compound in an amount of 4 to 12 wt.% with respect to the total weight of the etchant, as in the first item of the patent application The embossed pattern is formed on the chamfered portion of the window substrate according to any one of the items 4.

(6) 根據上述(5)所述的方法,其中該拋光輪具有拋光平面,在該拋光平面上分散有具有200至1200目數的粒子大小的切割介質。(6) The method according to (5) above, wherein the polishing wheel has a polishing plane on which a cutting medium having a particle size of 200 to 1200 mesh is dispersed.

(7) 根據上述(5)所述的方法,其中在拋光步驟中,該拋光輪是以10,000至 50,000 rpm的速度旋轉。(7) The method according to (5) above, wherein in the polishing step, the polishing wheel is rotated at a speed of 10,000 to 50,000 rpm.

(8) 根據上述(5)所述的方法,其中該侵蝕劑的溫度是15至40℃。(8) The method according to (5) above, wherein the temperature of the etchant is 15 to 40 °C.

根據本發明的視窗基板包含去角部分上的特定壓花圖型,由此能夠由於顯著改善伸長率而抑制破損。The window substrate according to the present invention includes a specific embossing pattern on the chamfered portion, whereby damage can be suppressed due to a significant improvement in elongation.

本發明揭露視窗基板,該視窗基板包括:在其去角部分上的壓花圖型,其中相對於壓花的總數量,底部具有5 mm或更長的長軸長度的壓花的數量為60%或更多,從而能夠由於顯著改善伸長率而抑制破損。The present invention discloses a window substrate comprising: an embossed pattern on a chamfered portion thereof, wherein the number of embossments having a long axis length of 5 mm or more at the bottom relative to the total number of embossments is 60 % or more, thereby being able to suppress breakage due to a significant improvement in elongation.

於下文,將詳細說明本發明的示例性具體實施例。Hereinafter, exemplary embodiments of the present invention will be described in detail.

作為視窗基板切割方法的典型例子,有機械和光學切割方法。由於視窗基板的切割平面具有尖銳和不均勻的表面(它容易受到外部衝擊損害),應在其上執行去角程序。As a typical example of a window substrate cutting method, there are mechanical and optical cutting methods. Since the cutting plane of the window substrate has a sharp and uneven surface (it is susceptible to damage from external impact), the chamfering procedure should be performed thereon.

如上所述,這樣的去角程序一般是以兩個步驟來進行,即藉由使旋轉拋光輪與切割平面接觸而細磨來拋光切割部分(也就是使切割部分去角),以及藉由使用侵蝕劑來侵蝕拋光的切割平面而對該拋光的切割平面進行加工,以避免例如由於去角部分中存在的細裂縫所產生的邊角破損等現象的發生。As described above, such a chamfering process is generally performed in two steps, that is, polishing the cut portion by grinding the rotating polishing wheel in contact with the cutting plane (that is, chamfering the cut portion), and by using The etchant erodes the polished cutting plane to machine the polished cutting plane to avoid phenomena such as corner breakage due to fine cracks present in the chamfered portion.

第1圖繪示出根據本發明具體實施例(範例1)的視窗基板的去角部分。本案發明人想到的想法是,當相對於壓花的總數,具有5 mm或更長的長軸長度的底部的壓花的數量為60%能顯著改善伸長率,並根據該想法完成本發明。Figure 1 depicts a chamfered portion of a window substrate in accordance with an embodiment of the present invention (Example 1). The inventors of the present invention conceived that the effect of the embossing of the bottom having a long axis length of 5 mm or more of 60% can significantly improve the elongation with respect to the total number of embossings, and the present invention has been completed in accordance with the idea.

去角部分的底部是指當從一單元壓花的前面看去,由可視邊緣環繞的橢圓(包括整體的橢圓、以及傾斜或扭曲的橢圓)的表面。此外,底部的長軸是指連接橢圓上兩個點的最長線段。The bottom of the chamfered portion refers to the surface of the ellipse (including the overall ellipse, and the slanted or twisted ellipse) surrounded by the visible edges when viewed from the front of a unit embossing. In addition, the long axis of the bottom refers to the longest line segment connecting the two points on the ellipse.

根據本發明的視窗基板包含去角部分上的壓花圖型,其中相對於壓花的總數,底部具有5mm或更長的長軸長度的壓花的數量為60%或更多,且在改善伸長率方面較佳為65至95%。The window substrate according to the present invention comprises an embossed pattern on the chamfered portion, wherein the number of embossments having a long axis length of 5 mm or more at the bottom with respect to the total number of embossments is 60% or more, and is improved The elongation is preferably from 65 to 95%.

具體而言,根據本發明的視窗基板可包含去角部分上的壓花圖型,其中相對於壓花的總數,底部具有小於5 mm的長軸長度的壓花的數量為2至40%,底部具有5 mm至10 mm的長軸長度的壓花的數量為20至70%,底部具有超過10 mm但不超過20 mm的長軸長度的壓花的數量為10至40%,以及底部具有超過20 mm的長軸長度的壓花的數量為0至20%。當去角部分包含的壓花圖型具有在如上描述的特定尺寸和比例範圍內的壓花時,改善伸長率的效果可被最大化。In particular, the window substrate according to the present invention may comprise an embossing pattern on the chamfered portion, wherein the number of embossments having a major axis length of less than 5 mm at the bottom relative to the total number of embossments is 2 to 40%, The number of embossings having a long axis length of 5 mm to 10 mm at the bottom is 20 to 70%, and the number of embossing having a long axis length of more than 10 mm but not exceeding 20 mm at the bottom is 10 to 40%, and the bottom has The number of embossments having a long axis length of more than 20 mm is 0 to 20%. When the embossed pattern contained in the chamfered portion has an embossing within a specific size and ratio range as described above, the effect of improving the elongation can be maximized.

此外,本發明提供使視窗基板去角的方法,以在去角部分上形成壓花圖型。Moreover, the present invention provides a method of chamfering a window substrate to form an embossed pattern on the chamfered portion.

此後,將詳細逐步說明使本發明視窗基板去角的方法的具體實施例。Hereinafter, a specific embodiment of a method of dehorning the window substrate of the present invention will be described in detail.

首先,拋光視窗基板的切割部分。First, the cut portion of the window substrate is polished.

藉由拋光視窗基板的尖銳切割部分來執行該拋光步驟,以使其表面平滑。This polishing step is performed by polishing the sharp cut portion of the window substrate to smooth the surface thereof.

該拋光方法藉由使旋轉拋光輪接觸切割平面而使用拋光切割部分的方法。This polishing method uses a method of polishing a cut portion by bringing the rotary buffing wheel into contact with the cutting plane.

通常,與視窗基板的切割部分接觸的拋光輪的拋光平面可包括金剛石顆粒、砂輪、碳化物粒子,以作為分散在合適基質(即黏合劑,例如樹脂或金屬黏合基質)的切割介質。Typically, the polishing plane of the polishing wheel that is in contact with the cut portion of the window substrate can include diamond particles, grinding wheels, carbide particles as a cutting medium dispersed in a suitable substrate (i.e., a binder, such as a resin or metal bonding matrix).

切割介質的粒子大小沒有特別限制,但可以是,例如200至1200目數。在此範圍內,其粒子大小可以是200至1200目數、200至1000目數、200至800目數、200至600目數、250至1000目數、400至1200目數、400至1000目數、400至800目數、等等,較佳為250至1000目數,以及更佳為400至800目數。當切割介質的粒子大小是落在200至1200目數的範圍內時,可輕易地進行拋光,以及可同時滿足拋光步驟的其他程序條件和後續的侵蝕程序條件。由此,能夠在去角部分上形成具有上述特定尺寸和比例內的壓花的壓花圖型,並改善強度和伸長率。The particle size of the cutting medium is not particularly limited, but may be, for example, 200 to 1200 mesh. Within this range, the particle size may be 200 to 1200 mesh, 200 to 1000 mesh, 200 to 800 mesh, 200 to 600 mesh, 250 to 1000 mesh, 400 to 1200 mesh, 400 to 1000 mesh. The number, 400 to 800 mesh, etc., is preferably 250 to 1000 mesh, and more preferably 400 to 800 mesh. When the particle size of the cutting medium falls within the range of 200 to 1200 mesh, polishing can be easily performed, and other program conditions of the polishing step and subsequent etching process conditions can be satisfied at the same time. Thereby, an embossed pattern having embossing within the above specific size and ratio can be formed on the chamfered portion, and strength and elongation can be improved.

可將拋光輪在接觸切割部分的時候沿著切割部分移動。The polishing wheel can be moved along the cutting portion while contacting the cutting portion.

沿著視窗基板的切割部分移動的拋光輪的速度為100至800 mm/sec。在此範圍內,其速度可為,例如100至800 mm/sec、100至600 mm/sec、100至400 mm/sec、150至700 mm/sec、150至500 mm/sec、200至800 mm/sec、200至600 mm/sec、200至400 mm/sec、400至800 mm/sec、400至600 mm/sec、等等,較佳為150至700 mm/sec,以及更佳為200至600 mm/sec。當拋光輪的移動速度落在100至800 mm/sec的範圍內時,可同時滿足拋光步驟的其他程序條件和後續的侵蝕程序條件,以及因此,能夠在去角部分上形成具有上述特定尺寸和比例內的壓花的壓花圖型,並改善強度和伸長率。The speed of the polishing wheel moving along the cut portion of the window substrate is 100 to 800 mm/sec. Within this range, the speed may be, for example, 100 to 800 mm/sec, 100 to 600 mm/sec, 100 to 400 mm/sec, 150 to 700 mm/sec, 150 to 500 mm/sec, and 200 to 800 mm. /sec, 200 to 600 mm/sec, 200 to 400 mm/sec, 400 to 800 mm/sec, 400 to 600 mm/sec, etc., preferably 150 to 700 mm/sec, and more preferably 200 to 600 mm/sec. When the moving speed of the polishing wheel falls within the range of 100 to 800 mm/sec, other program conditions of the polishing step and subsequent etching process conditions can be simultaneously satisfied, and thus, the specific size and the above-described size can be formed on the chamfered portion. The embossed embossing pattern within the ratio and improves strength and elongation.

當拋光輪是圓形,是藉由旋轉輪子來進行拋光。拋光輪的旋轉速度不特別限制,且可適當地選擇,以根據本發明透過後續侵蝕步驟形成壓花圖型。例如,其旋轉速度可為10,000至50,000 rpm,以及在此範圍內可為10,000至50,000 rpm、10,000至45,000 rpm、10,000至40,000 rpm、10,000至30,000 rpm、12,000至45,000 rpm、12,000至35,000 rpm、15,000至40,000 rpm、15,000至35,000 rpm、等等,較佳為12,000至45,000 rpm,以及更佳為15,000至40,000 rpm。當拋光輪的旋轉速度在此範圍內,可同時滿足拋光步驟的其他程序條件和後續的侵蝕程序條件,以及因此,能夠在去角部分上形成具有上述特定尺寸和比例內的壓花的壓花圖型,並改善強度和伸長率。When the polishing wheel is circular, it is polished by rotating the wheel. The rotational speed of the polishing wheel is not particularly limited and may be appropriately selected to form an embossed pattern through a subsequent etching step according to the present invention. For example, the rotational speed may be 10,000 to 50,000 rpm, and may be 10,000 to 50,000 rpm, 10,000 to 45,000 rpm, 10,000 to 40,000 rpm, 10,000 to 30,000 rpm, 12,000 to 45,000 rpm, 12,000 to 35,000 rpm, 15,000 in this range. Up to 40,000 rpm, 15,000 to 35,000 rpm, and the like, preferably 12,000 to 45,000 rpm, and more preferably 15,000 to 40,000 rpm. When the rotational speed of the polishing wheel is within this range, other program conditions of the polishing step and subsequent etching process conditions can be satisfied at the same time, and thus, embossing having embossing within the specific size and ratio described above can be formed on the chamfered portion Pattern and improve strength and elongation.

其次,經歷上述拋光步驟的視窗基板被侵蝕。Second, the window substrate subjected to the above polishing step is eroded.

侵蝕步驟可改善去角部分的平滑度,以避免例如由於去角部分中存在的細裂縫所產生的邊角破損等現象的發生。The etching step can improve the smoothness of the chamfered portion to avoid occurrence of a phenomenon such as breakage of a corner due to a fine crack existing in the chamfered portion.

侵蝕方法並未特別限制,但可使用,例如將去角部分浸在侵蝕劑中、噴塗侵蝕劑於去角部分或諸如此類的方法。較佳地,是藉由將視窗基板浸在侵蝕劑中來進行侵蝕。The etching method is not particularly limited, but may be used, for example, a method of immersing the chamfered portion in an etchant, spraying an etchant at a chamfered portion, or the like. Preferably, the etching is performed by immersing the window substrate in an etchant.

根據本發明的侵蝕劑包含含氟化合物。包括含氟化合物的侵蝕劑是用於侵蝕視窗基板的主要成分,且侵蝕劑並未特別限制,只要它能在水中解離,以產生氟離子,但是較佳包含選自HF、NaF、KF、NH4 F、KBF4 、NH4 BF4 或NaBF4 的任一者,以及更佳為使用 HF。The etchant according to the present invention contains a fluorine-containing compound. The etchant including the fluorine-containing compound is a main component for etching the window substrate, and the etching agent is not particularly limited as long as it can be dissociated in water to generate fluorine ions, but preferably contains HF, NaF, KF, NH selected from Any of 4 F, KBF 4 , NH 4 BF 4 or NaBF 4 , and more preferably HF.

相對於侵蝕劑的總重,含氟化合物的含量為4至12 wt.%。在此範圍內,其含量可為4至12 wt.%、4至10 wt.%、4至8 wt.%、4至10 wt.%、4至8 wt.%、5至12 wt.%、5至9 wt.%、等等,較佳為4至10 wt.%,以及更佳為5至9 wt.%。若含氟化合物的含量小於4 wt.%,可能無法得到具有上述特定尺寸和比例內的壓花的本發明壓花圖型,當其含量超過12 wt.%,可能無法得到壓花圖型,以及可能降低承擔加工成本的可加工性效率,而造成環境污染的發生。The content of the fluorine-containing compound is 4 to 12 wt.% with respect to the total weight of the etching agent. Within this range, the content may be 4 to 12 wt.%, 4 to 10 wt.%, 4 to 8 wt.%, 4 to 10 wt.%, 4 to 8 wt.%, 5 to 12 wt.%. 5 to 9 wt.%, etc., preferably 4 to 10 wt.%, and more preferably 5 to 9 wt.%. If the content of the fluorine-containing compound is less than 4 wt.%, the embossing pattern of the present invention having the embossing within the specific size and ratio described above may not be obtained, and when the content exceeds 12 wt.%, the embossing pattern may not be obtained. And it may reduce the processability efficiency of processing costs, resulting in environmental pollution.

若須要,除了含氟化合物以外,根據本發明的侵蝕劑可包含選自由硫酸和硝酸組成的群組的至少其中之一,以增強侵蝕性能。If desired, in addition to the fluorine-containing compound, the etchant according to the present invention may comprise at least one selected from the group consisting of sulfuric acid and nitric acid to enhance the erosion performance.

除了上述化合物,侵蝕劑可進一步包括添加劑,例如介面活性劑或諸如此類,以及依需要包含水作為剩餘液體。In addition to the above compounds, the etchant may further include an additive such as an surfactant or the like, and water as a remaining liquid as needed.

侵蝕劑的溫度並未特別限制,以及亦可適當地選擇。例如,其溫度可為15至40℃。在此範圍內,其溫度可為,例如 15至40℃、15至32℃、15至30℃、18至40℃、18至32℃、18至30℃、20至40℃、20至32℃、20至30℃、等等,較佳為18至35℃,以及更佳為20至30℃。當侵蝕劑的溫度是落在15至40℃的範圍內時,可利用侵蝕劑的優良穩定性有效地形成本發明的壓花圖型。The temperature of the etchant is not particularly limited, and may be appropriately selected. For example, its temperature can be from 15 to 40 °C. Within this range, the temperature may be, for example, 15 to 40 ° C, 15 to 32 ° C, 15 to 30 ° C, 18 to 40 ° C, 18 to 32 ° C, 18 to 30 ° C, 20 to 40 ° C, 20 to 32 ° C. 20 to 30 ° C, etc., preferably 18 to 35 ° C, and more preferably 20 to 30 ° C. When the temperature of the etchant falls within the range of 15 to 40 ° C, the excellent stability of the etchant can be utilized to effectively form the embossed pattern of the invention.

侵蝕步驟是進行20秒至10分鐘。在此範圍內,侵蝕時間可為,例如20秒至10分鐘、20秒至8分鐘、20秒至5分鐘、1分鐘至10分鐘、1分鐘至8分鐘、1分鐘至5分鐘、1分鐘至3分鐘、3分鐘至8分鐘、3分鐘至5分鐘、等等,較佳為1分鐘至8分鐘,以及更佳為1分鐘至5分鐘。若侵蝕步驟中的侵蝕進行時間小於20秒,可能無法得到根據本發明的壓花圖型,且非視窗基板的去角部分的圖型可能會損壞。The erosion step is performed for 20 seconds to 10 minutes. Within this range, the etching time may be, for example, 20 seconds to 10 minutes, 20 seconds to 8 minutes, 20 seconds to 5 minutes, 1 minute to 10 minutes, 1 minute to 8 minutes, 1 minute to 5 minutes, 1 minute to 3 minutes, 3 minutes to 8 minutes, 3 minutes to 5 minutes, and the like, preferably 1 minute to 8 minutes, and more preferably 1 minute to 5 minutes. If the erosion in the etching step is carried out for less than 20 seconds, the embossed pattern according to the present invention may not be obtained, and the pattern of the chamfered portion of the non-window substrate may be damaged.

本發明中所使用的視窗基板可以任何材料製備,該材料並未特別限制,只要它具有高的耐久性以充分地保護觸控螢幕面板和諸如此類免受外力,並讓使用者滿意地觀看顯示器,且任何在本領域所使用的視窗基板可被採用而沒有特定限制。例如,可使用玻璃、聚醚碸 (PES)、聚丙烯酸酯 (PAR)、聚醚醯亞胺 (PEI)、聚萘二甲酸乙二酯 (PEN)、聚對苯二甲酸乙二酯 (PET)、聚硫化苯 (PPS)、聚芳酯、聚亞醯胺、聚碳酸酯 (PC)、纖維素三醋酸酯 (TAC)、醋酸丙酸纖維素 (CAP)、或諸如此類。較佳為使用玻璃,以及更佳為使用強化玻璃。The window substrate used in the present invention may be prepared of any material, and the material is not particularly limited as long as it has high durability to sufficiently protect the touch panel and the like from external force, and allows the user to satisfactorily view the display. And any window substrate used in the art can be employed without particular limitation. For example, glass, polyether oxime (PES), polyacrylate (PAR), polyether phthalimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET) can be used. ), polysulfurized benzene (PPS), polyarylate, polyamidamine, polycarbonate (PC), cellulose triacetate (TAC), cellulose acetate propionate (CAP), or the like. It is preferred to use glass, and more preferably to use tempered glass.

要應用根據本發明的視窗基板的對象並未特別限制,但可被用作為,例如監視器、電視等的透明保護視窗,或可被應用於觸控螢幕面板等。The object to which the window substrate according to the present invention is applied is not particularly limited, but can be used as a transparent protective window such as a monitor, a television, or the like, or can be applied to a touch panel or the like.

當本發明的視窗基板被應用於觸控螢幕面板,可使用具有積層結構的面板,該積層結構包括在去角程序之前形成在其一個表面上的電極圖型。When the window substrate of the present invention is applied to a touch screen panel, a panel having a laminated structure including an electrode pattern formed on one surface thereof before the chamfering process can be used.

根據觸控螢幕面板的特定使用,這樣的積層結構可以是任何本領域習知的傳統積層結構,其沒有特定限制。例如,可使用電極圖型、絕緣層、BM、折射率匹配層(透明介電層)、保護層、防止散射膜、以及諸如此類的至少其中之一以製備以各種順序層疊的結構,但其並不以此為限。Depending on the particular use of the touch screen panel, such a laminate structure can be any conventional laminate structure as is known in the art without particular limitations. For example, at least one of an electrode pattern, an insulating layer, a BM, an index matching layer (transparent dielectric layer), a protective layer, a diffusion preventing film, and the like may be used to prepare structures stacked in various orders, but Not limited to this.

電極圖型可以起到偵測從人身體產生的靜電的作用(當他或她的手指觸摸像是影像感測器的觸控區域的顯示器部分時),然後將其轉換為電信號。The electrode pattern can function to detect static electricity generated from the human body (when his or her finger touches the display portion of the touch area of the image sensor) and then converts it into an electrical signal.

所使用來形成電極圖型的導電材料並未特別限制,但可包含例如,銦錫氧化物(ITO)、銦鋅氧化物(IZO)、氧化鋅(ZnO)、銦鋅錫氧化物(IZO)、鎘錫氧化物(CTO)、聚(3,4-亞乙基二氧噻吩)(poly(3,4-ethylenedioxythiopene)) (PEDOT)、碳奈米管(CNT)、金屬線等,它們可以單獨使用或以兩種或更多種組合使用。The conductive material used to form the electrode pattern is not particularly limited, but may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium zinc tin oxide (IZO). , cadmium tin oxide (CTO), poly(3,4-ethylenedioxythiophene) (PEDOT), carbon nanotubes (CNT), metal wires, etc., they can Used alone or in combination of two or more.

用於金屬線的金屬並未特別限制,但可包含例如銀(Ag)、金、鋁、銅、鐵、鎳、鈦、碲、鉻等等,它們可以單獨使用或以兩種或更多種組合使用。The metal used for the metal wire is not particularly limited, but may include, for example, silver (Ag), gold, aluminum, copper, iron, nickel, titanium, tantalum, chromium, or the like, which may be used alone or in two or more kinds. Used in combination.

電極圖型電路可以形成在對應於電極圖型的非顯示部分的區域上。透過形成在視窗基板上的顯示部分的觸摸,電極圖型電路起著將從電極圖型所產生的電信號遞送到FPCB、IC晶片或諸如此類的作用。電極圖型電路可以使用與形成電極圖型的材料和方法相同的材料和方法形成。The electrode pattern circuit may be formed on a region corresponding to the non-display portion of the electrode pattern. The electrode pattern circuit functions to deliver an electrical signal generated from the electrode pattern to the FPCB, the IC wafer, or the like through the touch of the display portion formed on the window substrate. The electrode pattern circuit can be formed using the same materials and methods as those used to form the electrode pattern.

絕緣層起著防止電極的電短路的作用,且其材料沒有特別的限制。例如,絕緣層可以金屬氧化物、矽氧化物、聚合物、丙烯酸樹脂或諸如此類形成。The insulating layer functions to prevent electrical shorting of the electrodes, and the material thereof is not particularly limited. For example, the insulating layer may be formed of a metal oxide, a cerium oxide, a polymer, an acrylic resin, or the like.

為了隱藏和遮蔽裝置之類的內板和電線,BM(非導電圖型)形成在非顯示部分(其是形成在視窗基板的邊緣部分)上的裝飾層,以使得觸控區域的顯示部分被定義於視窗基板的中心部分。In order to conceal and shield the inner panel and the wire, a BM (non-conductive pattern) is formed on the non-display portion (which is an edge portion formed on the edge portion of the window substrate) so that the display portion of the touch region is Defined in the center portion of the window substrate.

非導電圖型可以使用用於形成非導電圖型的組合物形成,該組合物包括黏合劑樹脂、可聚合化合物、聚合反應起始劑、顏料、溶劑以及諸如此類。The non-conductive pattern can be formed using a composition for forming a non-conductive pattern including a binder resin, a polymerizable compound, a polymerization initiator, a pigment, a solvent, and the like.

用於形成非導電圖型的組合物可進一步包含非導電金屬、非導電氧化物、或其混合物。The composition for forming a non-conductive pattern may further comprise a non-conductive metal, a non-conductive oxide, or a mixture thereof.

非導電金屬並未特別限制,但可包含例如,錫或鋁-矽合金。The non-conductive metal is not particularly limited, but may include, for example, tin or an aluminum-bismuth alloy.

非導電氧化物並未特別限制但可包含例如,二氧化鈦、二氧化矽或其混合物。The non-conductive oxide is not particularly limited but may contain, for example, titanium oxide, cerium oxide or a mixture thereof.

折射率匹配層通常是由包括氧化鈮、氧化矽或其混合物形成。The index matching layer is usually formed of cerium oxide, cerium oxide or a mixture thereof.

保護層起著防止包括電極圖型的積層結構被從外部污染或損壞的作用。The protective layer serves to prevent the laminated structure including the electrode pattern from being contaminated or damaged from the outside.

防止散射膜起著保護上述個別圖型和避免上述個別圖型在視窗基板破裂時潰散的作用。The scattering prevention film serves to protect the above individual patterns and to prevent the above-mentioned individual patterns from collapsing when the window substrate is broken.

防止散射膜的材料並未特別限制,只要其為透明的,並提供耐用性,並且可以包括例如,聚對苯二甲酸乙二酯(PET)。The material for preventing the scattering film is not particularly limited as long as it is transparent and provides durability, and may include, for example, polyethylene terephthalate (PET).

形成防止散射膜的方法並未特別限制,但可包含例如旋轉塗佈、滾筒塗佈、噴塗、浸塗、淋塗、刮刀分配、噴墨印刷、絲網印刷、移印、凹版印刷、平版印刷、彈性凸版印刷、模版印刷、壓印、和諸如此類。The method of forming the diffusion preventing film is not particularly limited, but may include, for example, spin coating, roll coating, spray coating, dip coating, shower coating, blade dispensing, inkjet printing, screen printing, pad printing, gravure printing, lithography. , flexographic printing, stencil printing, embossing, and the like.

在下文中,將參照範例和比較性範例說明較佳的具體實施例,以更具體地理解本發明。然而,本領域技術人員將理解這樣的具體實施例是提供用於說明的目的,且不限制詳細說明所揭露及所附的申請專利範圍所欲保護的主題。因此,對於那些本領域技術人員顯而易見的是在本發明的範圍和精神之內具體實施例的各種變化和修改都是可能的,並且適當地包括在所附申請專利範圍所限定的範圍內。範例 範例 1 In the following, preferred embodiments will be described with reference to examples and comparative examples to more specifically understand the invention. However, those skilled in the art will understand that the specific embodiments are provided for the purpose of illustration, and are not intended to limit the scope of the invention as claimed. Therefore, it is apparent to those skilled in the art that various changes and modifications may be made within the scope and spirit of the invention, and are included within the scope of the appended claims. Sample example 1

拋光程序是藉由使圓形拋光輪與切割部分接觸並以150 mm/sec的速度移動拋光輪來拋光該切割部分,而在強化玻璃的切割部分上進行,該強化玻璃具有0.7 mm 的厚度和60 cm的寬度、以Nd;YAG雷射切割,圓形拋光輪具有拋光平面並以20,000 rpm旋轉,在拋光平面上散佈著具有700目數的粒子大小的切割介質。The polishing process is performed by bringing the circular polishing wheel into contact with the cutting portion and moving the polishing wheel at a speed of 150 mm/sec to polish the cut portion, which is performed on the cut portion of the tempered glass, which has a thickness of 0.7 mm and The width of 60 cm, cut by Nd; YAG laser, the circular polishing wheel has a polishing plane and rotates at 20,000 rpm, and a cutting medium having a particle size of 700 mesh is spread on the polishing plane.

接著,以包括5wt.% 的HF的侵蝕劑於18℃的溫度下侵蝕上述拋光的切割部分,以形成切割部分上的壓花圖型。範例 2 Next, the above-mentioned polished cut portion was etched at a temperature of 18 ° C with an etchant comprising 5 wt.% of HF to form an embossed pattern on the cut portion. Example 2

切割部分上的去角程序是根據如範例1所描述的相同程序進行,除了侵蝕步驟的侵蝕進行3分鐘以外。比較性範例 1 The chamfering procedure on the cut portion was carried out according to the same procedure as described in Example 1, except that the erosion of the erosion step was performed for 3 minutes. Comparative example 1

切割部分上的去角程序是根據如範例1所描述的相同程序進行,除了侵蝕步驟並未進行以外。實驗性範例:伸長率的量測 The chamfering procedure on the cut portion was performed according to the same procedure as described in Example 1, except that the erosion step was not performed. Experimental example: Measurement of elongation

伸長率量測方式為,將彼此以20 mm的間距分開的兩個支撐跨距(support span)放置在於範例1和2以及比較性範例1中經歷去角的視窗基板下方中心的相對側,以及藉由放置在基板的中央上面部分的上方跨距而將負載施加至視窗基板的上面部分。The elongation was measured by placing two support spans separated from each other by a pitch of 20 mm in the opposite sides of the center of the window substrate subjected to the chamfering in Examples 1 and 2 and Comparative Example 1, and A load is applied to the upper portion of the window substrate by being placed over the upper span of the central upper portion of the substrate.

接著,量測上方跨距接觸視窗基板的一點以及視窗基板破裂的一點(十字頭位移)之間的距離,以根據以下式1計算伸長率,且所計算的結果示於以下表1中。Next, the distance between the point of the upper span contact window substrate and the point at which the window substrate was broken (crosshead displacement) was measured to calculate the elongation according to the following formula 1, and the calculated results are shown in Table 1 below.

[式1] 伸長率(%) = (6Tδ)/s2 (其中,T 表示視窗基板的厚度(mm),δ 表示十字頭位移(mm),以及s 表示支撐跨距之間的距離 (mm)。[Equation 1] Elongation (%) = (6Tδ) / s 2 (where T represents the thickness of the window substrate (mm), δ represents the crosshead displacement (mm), and s represents the distance between the support spans (mm) ).

第1圖說明範例1中去角部分的照片,以及第2圖說明比較性範例1中去角部分的照片。Fig. 1 illustrates a photograph of the chamfered portion in the example 1, and Fig. 2 illustrates a photograph of the chamfered portion in the comparative example 1.

[表1] [Table 1]

參照上述表1,可看見因為分別在範例1以及2中去角的視窗基板在去角部分包含壓花圖型,其中底部具有5 mm或更長的長軸長度的壓花的數量分別為85.8% 以及92.5%,他們分別具有0.8%以及1.2%的非常優異伸長率。Referring to Table 1 above, it can be seen that the window substrate which is chamfered in Examples 1 and 2 respectively contains an embossed pattern in the chamfered portion, and the number of embossings having a long axis length of 5 mm or longer at the bottom is 85.8, respectively. % and 92.5%, they have a very good elongation of 0.8% and 1.2%, respectively.

第1圖示出在範例1中去角的視窗基板的去角部分的SEM照片。參考第1圖,可看到壓花圖型清楚地形成在去角部分上。Fig. 1 shows an SEM photograph of the chamfered portion of the window substrate which was chamfered in Example 1. Referring to Figure 1, it can be seen that the embossing pattern is clearly formed on the chamfered portion.

然而,在沒有進行侵蝕步驟的比較性範例1中去角的視窗基板不具有形成於去角部分的壓花圖型,且具有0.3%的非常不良伸長率。However, in Comparative Example 1 in which the etching step was not performed, the window substrate which was chamfered did not have an embossing pattern formed at the chamfered portion, and had a very poor elongation of 0.3%.

第2圖示出在比較性範例1中去角的視窗基板的去角部分的SEM照片。參考第2圖,可看到沒有壓花圖型形成在去角部分上。Fig. 2 shows an SEM photograph of the chamfered portion of the window substrate which was chamfered in Comparative Example 1. Referring to Fig. 2, it can be seen that no embossed pattern is formed on the chamfered portion.

no

上述和本發明的其它目的、特徵和其它優點將被更清楚地從與附圖結合的以下詳細描述理解,其中: 第1圖是SEM照片,其繪示出根據範例1的方法執行去角程序所在的視窗基板的去角部分;以及 第2圖是SEM照片,其繪示出根據比較範例1的方法執行去角程序所在的視窗基板的去角部分。The above and other objects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings in which: FIG. 1 is an SEM photograph showing the execution of the chamfering procedure according to the method of Example 1. The chamfered portion of the window substrate in which it is located; and FIG. 2 is an SEM photograph showing the chamfered portion of the window substrate on which the chamfering program is performed according to the method of Comparative Example 1.

Claims (8)

一種視窗基板,包括: 在其一去角部分上的一壓花圖型,其中相對於壓花的一總數量,具有5 mm或更長的一長軸長度之一底部的壓花的該數量為60%或更多。A window substrate comprising: an embossed pattern on a chamfered portion thereof, wherein the number of embossments at the bottom of one of the major axis lengths of 5 mm or longer relative to a total number of embossments 60% or more. 如申請專利範圍第1項所述的視窗基板,其中該去角部分包括一壓花圖型,其中相對於壓花的一總數量,具有一底部且該底部具有小於5 mm的一長軸長度的壓花的該數量為2至40%,具有一底部且該底部具有5 mm至10 mm的一長軸長度的壓花的該數量為20至70%,具有一底部且該底部具有超過10 mm但不超過20 mm的一長軸長度的壓花的該數量為10至40%,以及具有一底部且該底部具有超過20 mm的一長軸長度的壓花的該數量為0至20%。The window substrate of claim 1, wherein the chamfered portion comprises an embossed pattern, wherein a total number of embossments has a bottom and the bottom has a major axis length of less than 5 mm The number of embossings is 2 to 40%, the number of embossments having a bottom and having a major axis length of 5 mm to 10 mm is 20 to 70%, having a bottom and the bottom having more than 10 The number of embossments of a long axis length of mm but not more than 20 mm is 10 to 40%, and the number of embossings having a bottom and a long axis length of the bottom having more than 20 mm is 0 to 20% . 如申請專利範圍第1項所述的視窗基板,其中該視窗基板是以選自由玻璃、聚醚碸 (PES)、聚丙烯酸酯 (PAR)、聚醚醯亞胺 (PEI)、聚萘二甲酸乙二酯 (PEN)、聚對苯二甲酸乙二酯 (PET)、聚硫化苯 (PPS)、聚芳酯、聚亞醯胺、聚碳酸酯 (PC)、纖維素三醋酸酯 (TAC)、以及醋酸丙酸纖維素 (CAP)組成的一群組的至少其中之一所形成。The window substrate of claim 1, wherein the window substrate is selected from the group consisting of glass, polyether enamel (PES), polyacrylate (PAR), polyether phthalimide (PEI), and polynaphthalene dicarboxylic acid. Ethylene diester (PEN), polyethylene terephthalate (PET), polysulfide (PPS), polyarylate, polyamine, polycarbonate (PC), cellulose triacetate (TAC) And at least one of a group consisting of cellulose acetate propionate (CAP). 如申請專利範圍第3項所述的視窗基板,其中該玻璃是一強化玻璃。The window substrate of claim 3, wherein the glass is a tempered glass. 一種使一視窗基板去角的方法,包括: 對該視窗基板的一切割部分藉由使一旋轉拋光輪接觸該切割部分而進行拋光,以及沿著該切割部分以100至800 mm/sec的一速度移動該拋光輪;以及 以一侵蝕劑侵蝕該所拋光的切割部分,相對於該侵蝕劑的一總重,該侵蝕劑以4至12 wt.%的一含量包括一含氟化合物, 以在如申請專利範圍第1項至第4項任一項所述的視窗基板的一去角部分上形成一壓花圖型。A method for chamfering a window substrate, comprising: polishing a cut portion of the window substrate by contacting a rotating polishing wheel with the cutting portion, and one along the cutting portion at 100 to 800 mm/sec Moving the polishing wheel at a speed; and etching the polished cutting portion with an etchant, the etchant comprising a fluorine-containing compound at a content of 4 to 12 wt.% relative to a total weight of the etchant to An embossed pattern is formed on a chamfered portion of the window substrate according to any one of claims 1 to 4. 如申請專利範圍第5項所述的方法,其中該拋光輪具有一拋光平面,在該拋光平面上分散有具有200至1200目數的一粒子大小的切割介質。The method of claim 5, wherein the polishing wheel has a polishing plane on which a cutting medium having a particle size of 200 to 1200 mesh is dispersed. 如申請專利範圍第5項所述的方法,其中在該拋光步驟中,該拋光輪是以10,000至 50,000 rpm的一速度旋轉。The method of claim 5, wherein in the polishing step, the polishing wheel is rotated at a speed of 10,000 to 50,000 rpm. 如申請專利範圍第5項所述的方法,其中該侵蝕劑的一溫度是15至40℃。The method of claim 5, wherein the temperature of the etchant is 15 to 40 °C.
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