JP4883352B2 - Method and apparatus for chamfering plate-like body - Google Patents

Method and apparatus for chamfering plate-like body Download PDF

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JP4883352B2
JP4883352B2 JP2006229458A JP2006229458A JP4883352B2 JP 4883352 B2 JP4883352 B2 JP 4883352B2 JP 2006229458 A JP2006229458 A JP 2006229458A JP 2006229458 A JP2006229458 A JP 2006229458A JP 4883352 B2 JP4883352 B2 JP 4883352B2
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chamfering
grindstone
plate
chamfered
chamfering grindstone
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JP2008049449A (en
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潤 大川
聡 金子
孝信 水野
辰朗 河内
浩司 竹中
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AGC Inc
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Asahi Glass Co Ltd
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Priority to KR1020070085215A priority patent/KR100967283B1/en
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303Apparatus specially adapted to the manufacture of LCDs
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/08Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass
    • B24B9/10Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of plate glass
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133305Flexible substrates, e.g. plastics, organic film

Description

本発明は板状体の面取り方法及びその装置に係り、特に液晶ディスプレイ、プラズマディスプレイ等に使用されるFPD(Flat Panel Display)用のガラス基板の端面を、面取り砥石によって面取りする板状体の面取り方法及びその装置に関する。   The present invention relates to a chamfering method and apparatus for a plate-like body, and in particular, chamfering a plate-like body by chamfering an end surface of a glass substrate for an FPD (Flat Panel Display) used for a liquid crystal display, a plasma display or the like with a chamfering grindstone. The present invention relates to a method and an apparatus thereof.

液晶ディスプレイ、プラズマディスプレイ等に使用されるFPD用のガラス基板は、溶融ガラスを板状に成形し、その後、切り/折り/面取り工程において、所定矩形サイズのガラス基板に切り折りされた後、面取り装置の面取り砥石によって、その縁面が面取り加工される。   Glass substrates for FPDs used in liquid crystal displays, plasma displays, etc., are formed by forming molten glass into a plate shape, and then cut and folded into a glass substrate of a predetermined rectangular size in a cutting / folding / chamfering process, and then chamfering. The edge surface is chamfered by the chamfering grindstone of the apparatus.

しかしながら、ガラス基板の面取り装置は、一辺に対し1台の面取り砥石で構成されているのが一般的であり、この構成では加工効率の向上には限界がある。   However, a glass substrate chamfering apparatus is generally composed of one chamfering grindstone for one side, and there is a limit to improvement in processing efficiency in this configuration.

一方、特許文献1には、ガラス基板の一辺に対し研削砥石と研磨砥石とを配置し、研削に続いて研磨を行う面取り装置が開示されている。
特開2001−9689号公報
On the other hand, Patent Document 1 discloses a chamfering device in which a grinding grindstone and a polishing grindstone are arranged on one side of a glass substrate, and polishing is performed following grinding.
Japanese Patent Laid-Open No. 2001-9589

しかしながら、特許文献1の面取り装置は、ガラス基板の一辺に対して2台の面取り砥石を配置しているが、これらの面取り砥石は異なる加工(研削、研磨)を行うものなので、2台の面取り砥石とも、ガラス基板の一辺長分を各々移動しなければならず、構成的には一辺に対し1台の面取り砥石で構成された面取り装置と同様で、加工効率の向上には限界がある。   However, although the chamfering apparatus of Patent Document 1 has two chamfering grindstones arranged on one side of the glass substrate, these chamfering grindstones perform different processing (grinding and polishing), so that two chamfering grindstones are arranged. Both the grindstones must move by the length of one side of the glass substrate, and are structurally similar to a chamfering device constituted by one chamfering grindstone for one side, and there is a limit to improving the processing efficiency.

また、ガラス基板の一辺に対して面取り砥石を2台用いて、ガラス基板の面取り範囲を分割すると、研磨装置が持つ機械精度の誤差や面取り砥石の摩耗量の違いから、双方の面取り砥石によって重なって面取りされる重なり部分に段差が生じ必要な面取り品質が得られないことが予測される。   In addition, when two chamfering grindstones are used for one side of the glass substrate and the chamfering range of the glass substrate is divided, the two chamfering grindstones overlap with each other due to errors in the mechanical accuracy of the polishing apparatus and differences in the wear amount of the chamfering grindstone. Therefore, it is expected that the required chamfering quality cannot be obtained due to the difference in level between the chamfered overlapping portions.

しかしながら、近年の液晶ディスプレイ用のガラス基板はサイズが大型化してきており、切り/折り面取り工程において、面取りプロセスが律速となっており、加工効率の向上が要求されている。   However, recent glass substrates for liquid crystal displays have become larger in size, and the chamfering process is rate-limiting in the cutting / folding chamfering process, and improvement in processing efficiency is required.

本発明は、このような事情に鑑みてなされたもので、板状体を効率よく従来と同等の加工品質で、面取り加工することができる板状体の面取り方法及びその装置を提供することを目的とする。   This invention is made in view of such a situation, and provides the chamfering method and apparatus of a plate-like body which can chamfer a plate-like body efficiently by the process quality equivalent to the past. Objective.

請求項1に記載の発明は、前記目的を達成するために、矩形状の板状体を所定の位置に固定し、前記板状体の端面を面取りする方法であって、板状体の一辺に対し少なくとも第1の面取り砥石と第2の面取り砥石の2台の面取り砥石を備え、前記第1及び第2の面取り砥石を板状体の一辺の端面に当接させた状態で一辺に沿って移動させて、一辺の端面を面取りする板状体の面取り方法において、前記第1の面取り砥石が前記板状体の一辺の途中から面取りを開始し、前記第2の面取り砥石が前記一辺の一方の端部から第1の面取り砥石と略同じ面取り代で面取りを開始し、第2の面取り砥石が、第1の面取り砥石の面取り開始点後方位置から開始点前方位置において、前記端面から板状体中央側に向かって中央部が最頂部となり両端部に向って傾斜する形状となる軌跡をもって移動されることにより、前記第2の面取り砥石が前記最頂部となる端面を、第1の面取り砥石の面取り開始点の面取りされた端面よりも深く面取りすることを特徴とする。   In order to achieve the above object, the invention according to claim 1 is a method of fixing a rectangular plate-like body in a predetermined position and chamfering an end surface of the plate-like body, and one side of the plate-like body. In contrast, at least two chamfering grindstones of the first chamfering grindstone and the second chamfering grindstone are provided, and the first and second chamfering grindstones are in contact with the end surface of one side of the plate body along one side. In the chamfering method of the plate-like body that chamfers the end face of one side, the first chamfering grindstone starts chamfering from the middle of one side of the plate-like body, and the second chamfering grindstone is Chamfering is started from one end portion with substantially the same chamfering margin as the first chamfering grindstone, and the second chamfering grindstone is a plate from the end surface at a position behind the chamfering start point of the first chamfering grindstone at a start point front position. Toward the center of the rod The second chamfering grindstone is chamfered deeper than the chamfered end surface of the chamfering start point of the first chamfering grindstone. Features.

請求項1に記載の発明によれば、板状体の一辺に第1の面取り砥石と第2の面取り砥石とを配置し、第1の面取り砥石が板状体の一辺の途中から面取りを開始し、第2の面取り砥石が一辺の一方の端部から第1の面取り砥石と略同じ面取り代で面取りを開始する。そして、第2の面取り砥石が、第1の面取り砥石の面取り開始点後方位置から開始点前方位置において、前記端面から板状体中央に側に向かって中央部が最頂部となり両端部に向って傾斜する形状となる軌跡をもって移動し、最頂部となる端面を、第1の面取り砥石の面取り開始点の面取りされた端面よりも深く面取りする。   According to the invention described in claim 1, the first chamfering grindstone and the second chamfering grindstone are arranged on one side of the plate-like body, and the first chamfering grindstone starts chamfering from the middle of one side of the plate-like body. Then, the second chamfering grindstone starts chamfering from one end of one side with substantially the same chamfering allowance as the first chamfering grindstone. Then, the second chamfering grindstone is a chamfering grindstone of the first chamfering grindstone from the rear position of the chamfering start point to the front position of the starting point. It moves with the locus | trajectory used as the shape which inclines, and chamfers the end surface used as the top most deeply than the chamfered end surface of the chamfering start point of a 1st chamfering grindstone.

すなわち、本発明は、板状体の一辺に2台の面取り砥石を配置し、一辺を2台の面取り砥石で分担して面取りを行うので、板状体を効率よく面取り加工することができる。例えば、請求項3の如く、第1の面取り砥石を一辺の中央部から面取りを第2の面取り砥石と略同時に開始させ、第2の面取り砥石を一辺の一方の端部から一辺の中央部を通過した時点で加工を停止させるようにすれば、加工時間を略半分に短縮できる。また、本発明によれば、2台の面取り砥石によって重なって面取りされる重なり部分において、先行する第1の面取り砥石による通常の面取り代よりも、後続する第2の面取り砥石の面取り代を多めに設定したので、前記重なり部分の段差を緩和できる。これによって、板状体の見かけを損なうこともなく、必要な面取り品質が得られる。   That is, according to the present invention, two chamfering grindstones are arranged on one side of a plate-like body, and chamfering is performed by sharing one side with two chamfering grindstones, so that the plate-like body can be chamfered efficiently. For example, as in claim 3, the chamfering of the first chamfering grindstone is started almost simultaneously with the second chamfering grindstone from the central portion of one side, and the second chamfering grindstone is moved from one end of one side to the central portion of one side. If the machining is stopped when it passes, the machining time can be shortened to almost half. According to the present invention, the chamfering margin of the subsequent second chamfering grindstone is larger than the normal chamfering margin of the preceding first chamfering grindstone in the overlapped portion chamfered by the two chamfering grindstones. Therefore, the level difference of the overlapping portion can be reduced. Thereby, the required chamfering quality can be obtained without impairing the appearance of the plate-like body.

なお、本発明は、板厚0.4〜2.8mm液晶ディスプレイ及びプラズマディスプレイ用ガラス基板にも有効であり、特に2000×1800mm以上の大型サイズのガラス基板において特に有効である。   In addition, this invention is effective also in the glass substrate for board thickness 0.4-2.8mm liquid crystal display and a plasma display, and is especially effective in the large sized glass substrate of 2000x1800mm or more especially.

請求項2に記載の発明は、請求項1において、前記第1の面取り砥石が前記板状体の一辺において、板状体の一辺の略中央部から一辺の他方の端部まで面取りを行い、前記第2の面取り砥石が前記一辺の一方の端部から前記一辺の略中央部まで面取りを行うことを特徴とする。   The invention according to claim 2 is the invention according to claim 1, wherein the first chamfering grindstone chamfers from a substantially central part of one side of the plate-like body to the other end of one side in the one side of the plate-like body, The second chamfering grindstone chamfers from one end portion of the one side to a substantially central portion of the one side.

請求項2に記載の発明によれば、第1の面取り砥石は、板状体の一辺の略中央部から辺の他方の端部まで面取りを行い、第2の面取り砥石は、一辺の一方の端部から一辺の略中央部まで面取りを行うので、第1の面取り砥石、及び第2の面取り砥石によって、板状体のコーナーエッジを面取り加工することができる。   According to invention of Claim 2, a 1st chamfering grindstone chamfers from the approximate center part of one side of a plate-shaped body to the other edge part of a side, and a 2nd chamfering grindstone is one side of one side. Since the chamfering is performed from the end portion to the substantially central portion of one side, the corner edge of the plate-like body can be chamfered by the first chamfering grindstone and the second chamfering grindstone.

請求項3に記載の発明によれば、前記第1の面取り砥石による前記板状体の一辺の略中央部からの面取り開始と、前記第2の面取り砥石による前記一辺の一方の端部からの面取り開始とを略同時に開始することを特徴とする。   According to invention of Claim 3, the chamfering start from the substantially center part of the one side of the plate-shaped body by the first chamfering grindstone, and from one end of the one side by the second chamfering grindstone It is characterized by starting chamfering substantially simultaneously.

請求項4に記載の発明は、前記目的を達成するために、矩形状の板状体を所定の位置に固定し、前記板状体の端面を面取りする方法であって、板状体の一辺に対し少なくとも第1の面取り砥石、第2の面取り砥石、及び第3の面取り砥石の3台の面取り砥石を備え、前記第1、第2、及び第3の面取り砥石を板状体の一辺の端面に当接させた状態で一辺に沿って移動させて、一辺の端面を面取りする板状体の面取り方法において、前記第1の面取り砥石、及び前記第2の面取り砥石がそれぞれ前記板状体の一辺の途中から面取りを開始し、前記第3の面取り砥石が前記一辺の一方の端部から第1の面取り砥石、及び第2の面取り砥石と略同じ面取り代で面取りを開始し、2の面取り砥石が、第1の面取り砥石の面取り開始点後方位置から開始点前方位置において、前記端面から板状体中央側に向かって中央部が最頂部となり両端部に向って傾斜する形状となる軌跡をもって移動されることにより、前記最頂部となる端面を、第1の面取り砥石の面取り開始点の面取りされた端面よりも深く面取りし、第3の面取り砥石が、第2の面取り砥石の面取り開始点後方位置から開始点前方位置において、前記端面から板状体中央側に向かって中央部が最頂部となり両端部に向って傾斜する形状となる軌跡をもって移動されることにより、前記最頂部となる端面を、第2の面取り砥石の面取り開始点の面取りされた端面よりも深く面取りすることを特徴とする。   The invention according to claim 4 is a method for fixing a rectangular plate-like body at a predetermined position and chamfering an end surface of the plate-like body in order to achieve the above object. Three chamfering grindstones of at least the first chamfering grindstone, the second chamfering grindstone, and the third chamfering grindstone, and the first, second, and third chamfering grindstones are arranged on one side of the plate-like body. In the method of chamfering a plate-like body that is moved along one side while being in contact with the end face, and chamfers the end face of one side, each of the first chamfering grindstone and the second chamfering grindstone is the plate-like body. Chamfering is started in the middle of one side, and the third chamfering grindstone starts chamfering from one end of the one side with substantially the same chamfering margin as the first chamfering grindstone and the second chamfering grindstone, The chamfering grindstone starts from the position behind the chamfering start point of the first chamfering grindstone. At the front position, the end surface that is the topmost portion is moved from the end surface toward the center of the plate-like body with a trajectory that has a shape in which the central portion becomes the topmost portion and is inclined toward both end portions. The chamfering grindstone is chamfered deeper than the chamfered end face of the chamfering start point, and the third chamfering grindstone is located at the center side of the plate-like body from the end face at the position behind the chamfering start point of the second chamfering grindstone. The end surface which becomes the top part is moved from the chamfered end face of the chamfering start point of the second chamfering grindstone by being moved with a trajectory having a shape in which the central part becomes the top part and is inclined toward both ends. It is also characterized by deep chamfering.

請求項4に記載の発明は、板状体の一辺に3台の面取り砥石を配置した発明である。すなわち、第1の面取り砥石、及び第2の面取り砥石が板状体の一辺の途中から面取りを開始し、第3の面取り砥石が一辺の一方の端部から第1の面取り砥石、及び第2の面取り砥石と略同じ面取り代で面取りを開始する。そして、第2の面取り砥石が、第1の面取り砥石の面取り開始点後方位置から開始点前方位置において、前記端面から板状体中心側に向かって中央部が最頂部となり両端部に向って傾斜する形状となる軌跡をもって移動することにより、最頂部となる端面を、第1の面取り砥石の面取り開始点の面取りされた端面よりも深く面取りする。そしてまた、第3の面取り砥石が、第2の面取り砥石の面取り開始点後方位置から開始点前方位置において、前記端面から板状体中心側に向かって中央部が最頂部となり両端部に向って傾斜する形状となる軌跡をもって移動することにより、最頂部となる端面を、第2の面取り砥石の面取り開始点の面取りされた端面よりも深く面取りする。   The invention according to claim 4 is an invention in which three chamfering grindstones are arranged on one side of the plate-like body. That is, the first chamfering grindstone and the second chamfering grindstone start chamfering in the middle of one side of the plate-like body, and the third chamfering grindstone starts from one end of one side, and the second chamfering grindstone Chamfering starts with approximately the same chamfering allowance as the chamfering grindstone. Then, the second chamfering grind is inclined toward both ends from the end surface toward the center of the plate-like body from the end surface toward the center of the plate-like body from the position behind the chamfering start point of the first chamfering grindstone. By moving with a trajectory having a shape to be chamfered, the end surface that is the topmost portion is chamfered deeper than the chamfered end surface of the chamfering start point of the first chamfering grindstone. In addition, the third chamfering grindstone is a chamfering grindstone of the second chamfering grindstone from the rear position of the chamfering start point to the front position of the starting point, and the central portion is the topmost portion from the end face toward the center of the plate-like body toward both ends. By moving with a trajectory having an inclined shape, the end surface that is the top is chamfered deeper than the chamfered end surface of the chamfering start point of the second chamfering grindstone.

すなわち、本発明は、板状体の一辺に3台の面取り砥石を配置し、一辺を3台の面取り砥石で分担して面取りを行うので、板状体を効率よく面取り加工することができる。また、本発明は、2台の面取り砥石によって重なって面取りされる重なり部分において、先行する1台の面取り砥石による通常の面取り代よりも、後続する1台の面取り砥石の面取り代を多めに設定したので、前記重なり部分の段差を緩和できる。これによって、板状体の板割れを防止できる。   That is, according to the present invention, three chamfering grindstones are arranged on one side of a plate-like body, and chamfering is performed by sharing one side with three chamfering grindstones, so that the plate-like body can be chamfered efficiently. In the present invention, the chamfering margin of one succeeding chamfering grindstone is set to be larger than the normal chamfering margin of the preceding one chamfering grindstone in the overlapping portion chamfered by two chamfering grindstones. Therefore, the level difference of the overlapping portion can be reduced. Thereby, it is possible to prevent the plate-like body from cracking.

請求項5に記載の発明は、前記第1の面取り砥石が前記板状体の一辺の略三分の一の部分から面取りを開始し、前記第2の面取り砥石が前記一辺の略三分の二の部分から面取りを開始し、前記第3の面取り砥石が前記一辺の一方の端部から第1の面取り砥石、及び第2の面取り砥石と略同時に面取りを開始することを特徴とする。このように面取り範囲を一辺において三分割し、略同時に面取りを開始させることにより、面取りを効率よく実施できる。   According to a fifth aspect of the present invention, the first chamfering grindstone starts chamfering from approximately one third of one side of the plate-like body, and the second chamfering grindstone is approximately third third of the one side. Chamfering is started from the second portion, and the third chamfering grindstone starts chamfering from one end of the one side almost simultaneously with the first chamfering grindstone and the second chamfering grindstone. In this way, the chamfering can be efficiently carried out by dividing the chamfering range into three on one side and starting chamfering substantially simultaneously.

請求項6に記載の発明は、請求項1から5において、前記面取り砥石の移動方向上流側に仕上げ砥石を配置し、該仕上げ砥石は前記面取り砥石の移動に連動して面取り砥石と同方向に移動することにより、面取り砥石の面取り部を仕上げ加工することを特徴とする。   A sixth aspect of the present invention is the method according to any one of the first to fifth aspects, wherein a finishing grindstone is disposed on the upstream side in the movement direction of the chamfering grindstone, and the finishing whetstone moves in the same direction as the chamfering grindstone in conjunction with the movement of the chamfering grindstone. It is characterized in that the chamfered portion of the chamfering grindstone is finished by moving.

請求項4に記載の発明によれば、それぞれの面取り砥石の移動に連動して仕上げ砥石を同方向に移動させ、面取り砥石によって加工された面取り部を、仕上げ砥石によって直ちに仕上げ加工するので、板状体の面取り部の仕上げ加工を効率よく行うことができる。   According to the invention described in claim 4, since the finishing grindstone is moved in the same direction in conjunction with the movement of each chamfering grindstone, and the chamfered portion processed by the chamfering grindstone is immediately finished by the finishing grindstone, the plate The finishing process of the chamfered portion of the body can be performed efficiently.

請求項7に記載の発明は、請求項1から6において、前記板状体の対向する二辺を同時に面取りすることを特徴とする。   A seventh aspect of the present invention is characterized in that, in the first to sixth aspects, two opposing sides of the plate-like body are chamfered simultaneously.

請求項7に記載の発明によれば、面取りは1辺毎に行ってもよいが、一辺に対向する辺の面取りを同時に行ってもよい。一辺に対向する辺の面取りを同時に行った後、板状体を90度回転させることにより、残りの二辺の面取りも同時に行う。これにより、同じ場所にて2辺の面取りを同時に実施することができるため、生産ライン長を短くでき、設備も安価となる。なお、板状体の四辺を同時に面取りすることもできるが、狭いスペースに多数のヘッドを配置しなければならないため、設備構成上困難である。   According to the seventh aspect of the present invention, chamfering may be performed for each side, but chamfering of a side opposite to one side may be performed simultaneously. After chamfering the side opposite to one side at the same time, the remaining two sides are chamfered simultaneously by rotating the plate-like body by 90 degrees. Thereby, since chamfering of two sides can be carried out at the same place at the same time, the production line length can be shortened and the equipment is also inexpensive. Although the four sides of the plate-like body can be chamfered at the same time, a large number of heads must be arranged in a narrow space, which is difficult in terms of equipment configuration.

請求項8に記載の発明は、前記目的を達成するために、請求項1から7のうちいずれか一つに記載の板状体の面取り方法により、前記板状体の端面を面取りする装置であって、板状体を固定する面取りテーブルと、板状体の一辺に対して少なくとも2台の面取り砥石とを備えていることを特徴とする。   The invention described in claim 8 is an apparatus for chamfering an end face of the plate-like body by the chamfering method of the plate-like body according to any one of claims 1 to 7 in order to achieve the object. A chamfering table for fixing the plate-like body and at least two chamfering grindstones on one side of the plate-like body are provided.

請求項8に記載の発明によれば、請求項1から7のうちいずれか一つに記載の板状体の面取り方法により、板状体の端面を面取りする。   According to invention of Claim 8, the end surface of a plate-shaped body is chamfered by the chamfering method of the plate-shaped body as described in any one of Claim 1-7.

本発明に係る板状体の面取り方法及びその装置によれば、板状体の一辺に2台以上の面取り砥石を配置し、一辺を2台以上の面取り砥石で分担して面取りを行うので、板状体を効率よく面取り加工することができる。また、本発明は、先行する1台の面取り砥石による通常の面取り代よりも、後続する1台の面取り砥石の面取り代を多めに設定したので、前記重なり部分の段差を緩和できる。これによって、見かけを損なうこともなく、また必要な面取り品質が得られる。   According to the chamfering method and apparatus for a plate-like body according to the present invention, two or more chamfering grindstones are arranged on one side of the plate-like body, and one side is divided by two or more chamfering grindstones to perform chamfering. The plate-like body can be chamfered efficiently. Further, according to the present invention, since the chamfering allowance of the succeeding one chamfering grindstone is set to be larger than the normal chamfering allowance of the preceding one chamfering grindstone, the step of the overlapping portion can be reduced. Thus, the required chamfering quality can be obtained without impairing the appearance.

以下添付図面に従って、本発明に係る板状体の面取り方法及びその装置の好ましい実施の形態について詳説する。   DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a plate-like chamfering method and apparatus according to the present invention will be described in detail below with reference to the accompanying drawings.

図1(A)には、2000×1800mmの液晶ディスプレイ用のガラス基板10の長辺10A、10Bに対向して、コーナーカット用面取り砥石16、粗研用の第1の面取り砥石12および第1の仕上げ砥石18、粗研用の第2の面取り砥石14および第2の仕上げ砥石20を、各々ガラス基板の面取りされる辺に略平行であり、砥石の進行方向(以下X方向ともいう。)の前方から前述の順序で所定の位置に配置した平面図が示されている。なお、図1には、液晶ディスプレイ用のガラス基板10を示したが、プラズマディスプレイ用のガラス基板にも適用できる。なお、コーナーカット用砥石16は、X方向の最も後方に配置しても良いが、前方に配置した方が、タクト向上の観点で好ましい。   FIG. 1A shows a corner-cut chamfering grindstone 16, a rough chamfering first chamfering grindstone 12, and a first chamfering grindstone 16 facing the long sides 10 </ b> A and 10 </ b> B of a glass substrate 10 for a 2000 × 1800 mm liquid crystal display. The finishing grindstone 18, the rough chamfering second chamfering grindstone 14, and the second finishing grindstone 20 are each substantially parallel to the chamfered side of the glass substrate, and the traveling direction of the grindstone (hereinafter also referred to as X direction). The top view arrange | positioned in the predetermined position from the front of this in the above-mentioned order is shown. In addition, although the glass substrate 10 for liquid crystal displays was shown in FIG. 1, it is applicable also to the glass substrate for plasma displays. The corner cutting grindstone 16 may be arranged at the rearmost position in the X direction, but it is preferable to arrange it at the front from the viewpoint of improving tact.

ガラス基板10は、図中破線で示す面取りテーブル22に吸着固定され、コーナーカット用砥石16、第1の面取り砥石12および第1の仕上げ砥石18、第2の面取り砥石14及び第2の仕上げ砥石20、が、不図示の回転用駆動部により所定回転数で回転しつつ、不図示の移動用駆動部により矢印で示す方向に一定速度で走行され、コーナーC1、C2のコーナーカット加工、ガラス基板10の長辺10A、10Bの面取り、仕上げ加工、及びを行う。   The glass substrate 10 is adsorbed and fixed to a chamfering table 22 indicated by a broken line in the drawing, and a corner cutting grindstone 16, a first chamfering grindstone 12, a first finishing grindstone 18, a second chamfering grindstone 14, and a second finishing grindstone. 20 is rotated at a predetermined speed by a driving unit for rotation (not shown), and is driven at a constant speed in a direction indicated by an arrow by a driving unit for movement (not shown), corner cut processing of corners C1 and C2, glass substrate 10 long sides 10A and 10B are chamfered, finished, and processed.

好ましくは、第1の面取り砥石12は、長辺10A、10Bの略中央部から面取りを開始するとともに長辺10A、10Bを通過した時点で面取り加工を停止する。また、第2の面取り砥石14は、第1の面取り砥石12の開始点を若干量通過した時点で面取り加工を停止する。第1、第2の仕上げ砥石18、20についても第1、第2の面取り砥石とそれぞれ同様の動作をする。なお、第1、第2の仕上げ砥石18、20の研磨部材としては、例えば不織布、SiC土製、又はレジンボンド製等のバフ仕上げのものを適用できる。   Preferably, the first chamfering grindstone 12 starts chamfering from a substantially central portion of the long sides 10A and 10B and stops chamfering when it passes through the long sides 10A and 10B. In addition, the second chamfering grindstone 14 stops the chamfering process when a small amount passes through the starting point of the first chamfering grindstone 12. The first and second finishing grindstones 18 and 20 perform the same operations as the first and second chamfering grindstones, respectively. In addition, as a grinding | polishing member of the 1st, 2nd finishing grindstones 18 and 20, the thing of buff finishing, such as a nonwoven fabric, the product made from SiC earth, or the product made from resin bond, is applicable, for example.

コーナーカットは、タクト向上の観点からコーナーカット用砥石16を設けた例で説明したが、面取り砥石12をX方向及びX方向と略直角であってガラス基板の面取りされる方向(以下、Y方向という。)に斜めに移動させてコーナーカットしてもよい。   The corner cutting has been described in the example in which the corner cutting grindstone 16 is provided from the viewpoint of improving the tact. However, the chamfering grindstone 12 is substantially perpendicular to the X direction and the X direction (hereinafter, the Y direction). The corner may be cut by moving it diagonally.

図1(A)の如く、長辺10A、10Bの面取り、及びコーナーC1、C2のカット加工を同時に行い、この後、図1(B)の如く、ガラス基板10を90度回転させることにより、短辺10C、10Dの面取り、仕上げ加工、及び残りのコーナーC3、C4のカット加工を同時に行うことができる。また、同一場所にて4辺の面取りを同時に実施すれば、ガラス基板10の生産ライン長を短くでき、設備も安価となるが、ガラス基板10の4辺を同時に面取りすることは、狭いスペースに多数の面取り用ヘッドを配置しなければならないため、設備構成上困難である。なお、面取りはガラス基板10の一辺毎に行ってもよいが、前述のように2辺同時に面取りを行うことがタクト向上の観点から望ましい。   As shown in FIG. 1A, the chamfering of the long sides 10A and 10B and the cut processing of the corners C1 and C2 are simultaneously performed, and then the glass substrate 10 is rotated by 90 degrees as shown in FIG. The chamfering and finishing of the short sides 10C and 10D and the cutting of the remaining corners C3 and C4 can be performed simultaneously. Further, if the four sides are chamfered at the same place at the same time, the production line length of the glass substrate 10 can be shortened and the equipment becomes inexpensive. However, chamfering the four sides of the glass substrate 10 at the same time is a narrow space. Since a large number of chamfering heads must be arranged, it is difficult in terms of equipment configuration. In addition, although chamfering may be performed for each side of the glass substrate 10, it is desirable from the viewpoint of tact improvement to perform chamfering of two sides simultaneously as described above.

〔実施例〕
面取りは、第1の面取り砥石12および仕上げ砥石18をガラス基板10の辺の長さの略中心から、第2の面取り砥石14および仕上げ砥石20をガラス基板10の辺の端から、略同時に退避位置からX方向に移動させるとともに、ガラス基板10の辺より面取り代位置までY方向に移動させて開始した。なお、このときの第1の面取り砥石12の速度は、105mm/sec、X方向の移動距離は90mmとした。
〔Example〕
In the chamfering, the first chamfering grindstone 12 and the finishing grindstone 18 are retracted substantially simultaneously from the center of the length of the side of the glass substrate 10, and the second chamfering grindstone 14 and the finishing grindstone 20 are retracted from the edge of the side of the glass substrate 10 substantially simultaneously. While moving from the position in the X direction, the movement was started from the side of the glass substrate 10 to the chamfering margin position in the Y direction. At this time, the speed of the first chamfering grindstone 12 was 105 mm / sec, and the moving distance in the X direction was 90 mm.

第1の面取り砥石12、第2の面取り砥石14、第1の仕上げ砥石18、及び第2の仕上げ砥石20のX方向の速度は、90mm/sec〜150mm/secの範囲が好ましい。X方向の速度が、90mm/secよりも遅いと生産性が悪く、150mm/secよりも早いとガラス基板10の面取り部に欠けやヤケが生じて面取り品質不良となったり、またガラス基板10が破損する虞がある。本実施例ではX方向の速度は110mm/secとした。   The speed in the X direction of the first chamfering grindstone 12, the second chamfering grindstone 14, the first finishing grindstone 18, and the second finishing grindstone 20 is preferably in the range of 90 mm / sec to 150 mm / sec. If the speed in the X direction is slower than 90 mm / sec, the productivity is poor, and if it is faster than 150 mm / sec, the chamfered portion of the glass substrate 10 is chipped or burned, resulting in poor chamfering quality. There is a risk of damage. In this embodiment, the speed in the X direction was 110 mm / sec.

面取り代は0.15〜0.2mmであることが好ましい。面取り代が0.15以下であるとガラス基板10を切折したときに発生したエッジの欠けが面取りで取りきれず、面取り代が0.2mmより大きいと生産性が悪くなる。   The chamfering margin is preferably 0.15 to 0.2 mm. If the chamfering margin is 0.15 or less, the chipped edges generated when the glass substrate 10 is cut cannot be completely chamfered, and if the chamfering margin is larger than 0.2 mm, the productivity is deteriorated.

図2は、図1に示した面取り砥石の移動軌跡を示した説明図である。第1の面取り砥石12および仕上げ砥石18によって、面取り代を一定にしてガラス基板10の面取りさせたが、第2の面取り砥石14および仕上げ砥石20は、第1の面取り砥石12および仕上げ砥石18によって面取りされた部分の手前から、面取り代を増やしながら面取りし、面取りが重なった後、X方向に移動しつつY方向退避位置まで移動させた。   FIG. 2 is an explanatory view showing a movement locus of the chamfering grindstone shown in FIG. The glass substrate 10 is chamfered with a constant chamfering margin by the first chamfering grindstone 12 and the finishing grindstone 18, but the second chamfering grindstone 14 and the finishing grindstone 20 are chamfered by the first chamfering grindstone 12 and the finishing grindstone 18. From the front of the chamfered portion, chamfering was performed while increasing the chamfering allowance, and after the chamfering overlapped, the chamfered portion was moved to the Y-direction retreat position while moving in the X direction.

すなわち、図2の如く、第2の面取り砥石14は、第1の面取り砥石12の面取り開始点(A点)のX方向の後方位置(B点)から開始点(A点)のX方向の前方位置(C点)において、中央部が最頂部(D点)となり両端部に向って傾斜する形状となる軌跡(E)をもって移動される。これにより、軌跡(E)の最頂部(D点)となる端面において、第1の面取り砥石12によって面取りされた端面よりも深く面取りされることになる。なお、仕上げ砥石18も同様の軌跡をもって移動される。   That is, as shown in FIG. 2, the second chamfering grindstone 14 is moved from the rear position (point B) in the X direction of the chamfering start point (point A) of the first chamfering grindstone 12 in the X direction from the start point (point A). At the front position (point C), the center portion is the topmost portion (point D) and is moved with a locus (E) having a shape inclined toward both ends. As a result, the end surface that is the topmost point (point D) of the locus (E) is chamfered deeper than the end surface chamfered by the first chamfering grindstone 12. The finishing grindstone 18 is also moved with a similar locus.

すなわち、図1の面取り装置は、ガラス基板10の一辺に2台の面取り砥石12、14および仕上げ砥石18、20を配置し、一辺を2台の面取り砥石12、14および仕上げ砥石18、20で分担して面取りを行うので、ガラス基板10を効率よく面取り加工することができた。また、図1の面取り装置は、2台の面取り砥石12、14の図2に示したX方向のA点からC点の重なり部分において、第2の面取り砥石14の面取り代を、第1の面取り砥石12の面取り代よりも多めに設定したので、重なり部分の段差を緩和でき、ガラス基板10は必要な面取り品質を得ることが出来た。   That is, the chamfering apparatus of FIG. 1 arranges two chamfering grindstones 12 and 14 and finishing whetstones 18 and 20 on one side of the glass substrate 10, and two chamfering grindstones 12 and 14 and finishing whetstones 18 and 20 on one side. Since the chamfering is performed in a shared manner, the glass substrate 10 can be chamfered efficiently. Further, the chamfering apparatus of FIG. 1 sets the chamfering margin of the second chamfering grindstone 14 to the first chamfering grindstone 14 at the overlapping portion from the point A to the point C in the X direction shown in FIG. Since it set more than the chamfering allowance of the chamfering grindstone 12, the level difference of the overlapping portion could be relaxed, and the glass substrate 10 could obtain the necessary chamfering quality.

図3は、ガラス基板10の一辺に対向して、3台の面取り砥石12、14、22をX方向の前方から前述の順序で配置した面取り装置の実施例であり、図4は図3に示した面取り砥石の移動軌跡を示した説明図である。なお、図3において、コーナーカット砥石16を第1の面取り砥石のX方向の前方に、3台の面取り砥石12、14、24それぞれのX方向の下流に仕上げ砥石18、20、26を配置する。   FIG. 3 shows an embodiment of a chamfering device in which three chamfering grindstones 12, 14, and 22 are arranged in the order described above from the front in the X direction so as to face one side of the glass substrate 10. FIG. It is explanatory drawing which showed the movement locus | trajectory of the shown chamfering grindstone. In FIG. 3, the finishing grindstones 18, 20, and 26 are disposed in the corner cut grindstone 16 in front of the first chamfering grindstone in the X direction and downstream of each of the three chamfering grindstones 12, 14, and 24 in the X direction. .

この面取り装置によれば、第1の面取り砥石12、及び第2の面取り砥石14がガラス基板10の一辺の途中から、また第3の面取り砥石24が一辺の端部から第1の面取り砥石12、及び第2の面取り砥石14と略同時に略同じ面取り代で面取りを開始する。そして、第2の面取り砥石14が、図4の如く第1の面取り砥石12の面取り開始点(A点:一辺の略三分の一の位置)のX方向の後方位置(B点:一辺の略三分の二の位置)から開始点(A点)のX方向の前方位置(C点)において、中央部が最頂部(D点)となり両端部に向って傾斜する形状となる軌跡(E)をもって移動することにより、最頂部(D点)となる端面において第1の面取り砥石12によって面取りされた端面よりも深く面取りされる。そしてまた、第3の面取り砥石24が、第2の面取り砥石14の面取り開始点(A‘)のX方向の後方位置(B’)から開始点(A‘)のX方向の前方位置(C’)において、中央部が最頂部(D‘)となり両端部に向って傾斜する形状となる軌跡(E’)をもって移動することにより、最頂部(D‘)となる端面において第2の面取り砥石14によって面取りされた端面よりも深く面取りされる。   According to this chamfering device, the first chamfering grindstone 12 and the second chamfering grindstone 14 are in the middle of one side of the glass substrate 10, and the third chamfering grindstone 24 is in the first chamfering grindstone 12 from the end of one side. The chamfering is started at substantially the same chamfering margin almost simultaneously with the second chamfering grindstone 14. Then, as shown in FIG. 4, the second chamfering grindstone 14 has a rear position (point B: one side) of the chamfering start point of the first chamfering grindstone 12 (point A: approximately one third of one side). At the front position (point C) from the start point (point A) to the start point (point A) from the approximately two-thirds position, the central portion becomes the topmost portion (point D), and the trajectory has a shape inclined toward both ends (E ), The chamfering is deeper than the end surface chamfered by the first chamfering grindstone 12 at the end surface serving as the topmost portion (point D). Further, the third chamfering grindstone 24 moves from the rear position (B ′) in the X direction of the chamfering start point (A ′) of the second chamfering grindstone 14 to the front position (C in the X direction from the start point (A ′). In '), the second chamfering grindstone is moved at the end surface which becomes the topmost part (D') by moving with the locus (E ') having a shape in which the central part becomes the topmost part (D') and is inclined toward both ends. 14 is chamfered deeper than the end face chamfered by 14.

すなわち、図3の面取り装置は、ガラス基板10の一辺に3台の面取り砥石12、14、24を略等間隔に配置し、一辺を3台の面取り砥石12、14、24でそれぞれ略三分の一ずつ分担して面取りを行うので、ガラス基板10を効率よく面取り加工することができる。また、この面取り装置は、2台の面取り砥石12、14の図4に示したX方向A点からC点の重なり部分において、第2の面取り砥石14の面取り代を、第1の面取り砥石12の面取り代よりも多めに設定したので、重なり部分の段差を緩和できる。更にまた、2台の面取り砥石14、24の図4に示したX方向A‘点からC’点の重なり部分において、第3の面取り砥石24の面取り代を、第2の面取り砥石14の面取り代よりも多めに設定したので、重なり部分の段差を緩和できる。これによって、ガラス基板10は必要な面取り品質が得ることができる。なお、仕上げ砥石18、20、26も同様の軌跡をもって移動される。   That is, the chamfering apparatus of FIG. 3 arranges three chamfering grindstones 12, 14, 24 on one side of the glass substrate 10 at substantially equal intervals, and each side is roughly divided by three chamfering grindstones 12, 14, 24. Therefore, the glass substrate 10 can be chamfered efficiently. Further, in this chamfering device, the chamfering margin of the second chamfering grindstone 14 is changed to the first chamfering grindstone 12 in the overlapping portion between the two points of the chamfering grindstones 12 and 14 from point A to point C in the X direction shown in FIG. Since it is set to be larger than the chamfering allowance, the level difference at the overlapping portion can be reduced. Furthermore, the chamfering allowance of the third chamfering grindstone 24 is chamfered at the overlapping portion of the two chamfering grindstones 14 and 24 from the point A ′ to the C ′ point in the X direction shown in FIG. Since it is set to be larger than the cost, the level difference at the overlapping part can be relaxed. Thereby, the glass substrate 10 can obtain the required chamfering quality. The finishing grindstones 18, 20, and 26 are also moved with the same locus.

図2、図4の如く、第2の面取り砥石14のY方向のアプローチ量α(第2の面取り砥石14が第1の面取り砥石12の面取り代よりもY方向に多く削る量)が、0.03mmより小さいと砥石の磨耗量の違いや措置の機械精度の誤差によって面取りできないことがあり、0.5mmよりも大きいと砥石12と砥石14の面取りされた端面の段差が大きくなるので、アプローチ量αは0.03〜0.5mmが好ましく、0.1〜0.2mmが更に好ましい。これにより、二つの面取り砥石で面取りされた端面の重なり部分の段差を大幅に緩和できる。   As shown in FIGS. 2 and 4, the approach amount α in the Y direction of the second chamfering grindstone 14 (the amount that the second chamfering grindstone 14 sharpens in the Y direction more than the chamfering allowance of the first chamfering grindstone 12) is 0. If it is smaller than 0.03 mm, chamfering may not be possible due to a difference in the amount of wear of the grinding wheel or an error in the mechanical accuracy of the measure, and if it is larger than 0.5 mm, the step between the chamfered end faces of the grinding stone 12 and the grinding stone 14 becomes large. The amount α is preferably 0.03 to 0.5 mm, more preferably 0.1 to 0.2 mm. Thereby, the level | step difference of the overlap part of the end surface chamfered with two chamfering grindstones can be relieve | moderated significantly.

第2の面取り砥石14のX方向のアプローチ量β(砥石12の面取り代よりも多く面取りを取り始める点B点からD点までのX方向の長さ)は、100mmより小さいと二つの面取り砥石で面取りされた端面の重なり部分の段差が目立ってしまうので、100〜500mmが好ましく、400mm程度あればよい。   If the approach amount β in the X direction of the second chamfering grindstone 14 (the length in the X direction from the point B to the D point where chamfering begins to be chamfered more than the chamfering margin of the grindstone 12) is smaller than 100 mm, two chamfering grindstones Since the step of the overlapping portion of the end face chamfered by the step becomes conspicuous, the thickness is preferably 100 to 500 mm, and may be about 400 mm.

第2の面取り砥石14の軌跡の最頂部D点からX方向に面取りする長さXは、1mmよりも小さいと二つの面取り砥石で面取りされた端面の重なり部分の段差が目立ってしまい、長くなるとタクトが伸びてしまうので、1〜500mmが好ましく、特には3〜5mm程度がよい。   When the length X chamfered in the X direction from the topmost point D of the locus of the second chamfering grindstone 14 is smaller than 1 mm, a step at the overlapping portion of the end surfaces chamfered by the two chamfering grindstones becomes conspicuous and becomes longer. Since tact lengthens, 1 to 500 mm is preferable, and about 3 to 5 mm is particularly preferable.

第1の面取り砥石12が面取り代まで到達したA点から第2の面取り砥石14のピークD点までのX方向の長さγは、0以上であればよい。なお、上述したα、β、γは第3の面取り砥石24においても同様である。   The length γ in the X direction from the point A where the first chamfering grindstone 12 reaches the chamfer allowance to the peak D point of the second chamfering grindstone 14 may be 0 or more. Note that α, β, and γ described above are the same in the third chamfering grindstone 24.

面取り砥石12、14、24の高さ方向(以下、Z方向ともいう。)の位置関係は同一が好ましいが、最大で0.2mmの差があっても加工に支障はない。   The positional relationship in the height direction (hereinafter also referred to as Z direction) of the chamfering grindstones 12, 14, and 24 is preferably the same, but there is no problem in processing even if there is a difference of 0.2 mm at the maximum.

本発明の板状体の面取り装置は、建材用やミラー用等の一般的なガラス板の面取りにも適用でき、また、金属等板状体の材質を問わずに適用可能である。   The plate-like chamfering apparatus of the present invention can also be applied to chamfering of general glass plates such as for building materials and mirrors, and can be applied regardless of the material of the plate-like body such as metal.

実施の形態のガラス基板面取り装置の平面図Plan view of glass substrate chamfering apparatus of embodiment 図1に示した面取り砥石の移動軌跡を示した説明図Explanatory drawing which showed the movement locus | trajectory of the chamfering grindstone shown in FIG. ガラス基板の一辺に対向して、3台の面取り砥石をX方向の前方から前述の順序で配置したガラス基板面取り装置の平面図A plan view of a glass substrate chamfering device in which three chamfering grindstones are arranged in the order described above from the front in the X direction so as to face one side of the glass substrate. 図3に示した面取り砥石の移動軌跡を示した説明図Explanatory drawing which showed the movement locus | trajectory of the chamfering grindstone shown in FIG.

符号の説明Explanation of symbols

10…ガラス基板、12…第1の面取り砥石、14…第2の面取り砥石、16…コーナーエッジ用面取り砥石、18…第1の仕上げ砥石、20…2の仕上げ砥石、22…テーブル、24…第3の面取り砥石、26…第3の仕上げ砥石   DESCRIPTION OF SYMBOLS 10 ... Glass substrate, 12 ... 1st chamfering grindstone, 14 ... 2nd chamfering grindstone, 16 ... Corner chamfering grindstone, 18 ... 1st finishing grindstone, 20 ... 2 finishing grindstones, 22 ... Table, 24 ... 3rd chamfering grindstone, 26 ... 3rd finishing grindstone

Claims (8)

矩形状の板状体を所定の位置に固定し、前記板状体の端面を面取りする方法であって、板状体の一辺に対し少なくとも第1の面取り砥石と第2の面取り砥石の2台の面取り砥石を備え、前記第1及び第2の面取り砥石を板状体の一辺の端面に当接させた状態で一辺に沿って移動させて、一辺の端面を面取りする板状体の面取り方法において、
前記第1の面取り砥石が前記板状体の一辺の途中から面取りを開始し、前記第2の面取り砥石が前記一辺の一方の端部から第1の面取り砥石と略同じ面取り代で面取りを開始し、第2の面取り砥石が、第1の面取り砥石の面取り開始点後方位置から開始点前方位置において、前記端面から板状体中央側に向かって中央部が最頂部となり両端部に向って傾斜する形状となる軌跡をもって移動されることにより、前記第2の面取り砥石が前記最頂部となる端面を、第1の面取り砥石の面取り開始点の面取りされた端面よりも深く面取りすることを特徴とする板状体の面取り方法。
A method of fixing a rectangular plate-like body at a predetermined position and chamfering the end face of the plate-like body, at least two of the first chamfering grindstone and the second chamfering grindstone with respect to one side of the plate-like body A chamfering method for a plate-like body comprising a chamfering grindstone, wherein the first and second chamfering grindstones are moved along one side in a state where the first and second chamfering grindstones are in contact with an end surface of one side of the plate-like body, and the end surface of one side is chamfered. In
The first chamfering grindstone starts chamfering in the middle of one side of the plate-like body, and the second chamfering grindstone starts chamfering from one end of the one side with substantially the same chamfering margin as the first chamfering grindstone. Then, the second chamfering grind is inclined toward both ends from the end surface toward the center of the plate-like body from the end surface toward the center of the plate-like body from the position behind the chamfering start point of the first chamfering grindstone. The second chamfering grindstone is chamfered deeper than the chamfered end surface of the chamfering start point of the first chamfering grindstone by moving the second chamfering grindstone with a trajectory that forms a shape. Chamfering method for plate-like body.
前記第1の面取り砥石が前記板状体の一辺において、板状体の一辺の略中央部から前記一辺の他方の端部まで面取りを行い、前記第2の面取り砥石が前記一辺の一方の端部から前記一辺の略中央部まで面取りを行うことを特徴とする請求項1に記載の板状体の面取り方法。   The first chamfering grindstone chamfers from approximately the center of one side of the plate-like body to the other end of the one side, and the second chamfering grindstone is one end of the one side of the plate-like body. The chamfering method for a plate-like body according to claim 1, wherein chamfering is performed from a portion to a substantially central portion of the one side. 前記第1の面取り砥石による前記板状体の一辺の略中央部からの面取り開始と、前記第2の面取り砥石による前記一辺の一方の端部からの面取り開始とを略同時に開始することを特徴とする請求項1又は2に記載の板状体の面取り方法。   The chamfering start from the substantially central portion of one side of the plate-like body by the first chamfering grindstone and the chamfering start from one end portion of the one side by the second chamfering grindstone are started substantially simultaneously. The method for chamfering a plate-like body according to claim 1 or 2. 矩形状の板状体を所定の位置に固定し、前記板状体の端面を面取りする方法であって、板状体の一辺に対し少なくとも第1の面取り砥石、第2の面取り砥石、及び第3の面取り砥石の3台の面取り砥石を備え、前記第1、第2、及び第3の面取り砥石を板状体の一辺の端面に当接させた状態で一辺に沿って移動させて、一辺の端面を面取りする板状体の面取り方法において、
前記第1の面取り砥石、及び前記第2の面取り砥石がそれぞれ前記板状体の一辺の途中から面取りを開始し、前記第3の面取り砥石が前記一辺の一方の端部から第1の面取り砥石、及び第2の面取り砥石と略同じ面取り代で面取りを開始し、
第2の面取り砥石が、第1の面取り砥石の面取り開始点後方位置から開始点前方位置において、前記端面から板状体中央側に向かって中央部が最頂部となり両端部に向って傾斜する形状となる軌跡をもって移動されることにより、前記最頂部となる端面を、第1の面取り砥石の面取り開始点の面取りされた端面よりも深く面取りし、
第3の面取り砥石が、第2の面取り砥石の面取り開始点後方位置から開始点前方位置において、前記端面から板状体中央側に向かって中央部が最頂部となり両端部に向って傾斜する形状となる軌跡をもって移動されることにより、前記最頂部となる端面を、第2の面取り砥石の面取り開始点の面取りされた端面よりも深く面取りすることを特徴とする板状体の面取り方法。
A method of fixing a rectangular plate-like body at a predetermined position and chamfering an end face of the plate-like body, wherein at least a first chamfering grindstone, a second chamfering grindstone, 3 chamfering grindstones are provided, and the first, second, and third chamfering grindstones are moved along one side in a state where the first, second, and third chamfering grindstones are in contact with an end surface of one side of the plate-like body, In the chamfering method of the plate-like body that chamfers the end face of
The first chamfering grindstone and the second chamfering grindstone each start chamfering in the middle of one side of the plate-like body, and the third chamfering grindstone is first chamfering grindstone from one end of the one side. And chamfering is started with approximately the same chamfering allowance as the second chamfering grindstone,
A shape in which the second chamfering grindstone inclines toward both ends from the end face toward the center side of the plate-like body from the end face toward the start point front position from the chamfering start point rear position of the first chamfering grindstone. By chamfering with the trajectory to be chamfered deeper than the chamfered end face of the chamfering start point of the first chamfering grindstone, the end face that is the topmost part,
A shape in which the third chamfering grindstone is inclined toward both ends from the end surface toward the center of the plate-like body from the end surface toward the center of the plate body from the chamfering start point rear position of the second chamfering grindstone. A chamfering method for a plate-like body, characterized in that the end face serving as the topmost part is chamfered deeper than the chamfered end face of the chamfering start point of the second chamfering grindstone.
前記第1の面取り砥石が前記板状体の一辺の略三分の一の部分から面取りを開始し、前記第2の面取り砥石が前記一辺の略三分の二の部分から面取りを開始し、前記第3の面取り砥石が前記一辺の一方の端部から第1の面取り砥石、及び第2の面取り砥石と略同時に面取りを開始することを特徴とする請求項4に記載の板状体の面取り方法。   The first chamfering grindstone starts chamfering from approximately one third of one side of the plate-like body, and the second chamfering grindstone starts chamfering from approximately two thirds of the one side, The chamfering of a plate-shaped body according to claim 4, wherein the third chamfering grindstone starts chamfering from one end of the one side substantially simultaneously with the first chamfering grindstone and the second chamfering grindstone. Method. 前記面取り砥石の移動方向上流側に仕上げ砥石を配置し、該仕上げ砥石は前記面取り砥石の移動に連動して面取り砥石と同方向に移動することにより、面取り砥石の面取り部を仕上げ加工することを特徴とする請求項1から5のうちいずれか一つに記載の板状体の面取り方法。   A finishing grindstone is disposed upstream of the chamfering grindstone in the moving direction, and the finishing grindstone moves in the same direction as the chamfering grindstone in conjunction with the movement of the chamfering grindstone to finish the chamfered portion of the chamfering grindstone. The chamfering method for a plate-like body according to any one of claims 1 to 5. 前記板状体の対向する二辺を同時に面取りすることを特徴とする請求項1から6のうちいずれか一つに記載の板状体の面取り方法。   The chamfering method for a plate-like body according to any one of claims 1 to 6, wherein two opposite sides of the plate-like body are chamfered simultaneously. 請求項1から7のうちいずれか一つに記載の板状体の面取り方法により、前記板状体の端面を面取りする装置であって、板状体を固定する面取りテーブルと、板状体の一辺に対して少なくとも2台の面取り砥石とを備えていることを特徴とする板状体の面取り装置。   A device for chamfering an end face of the plate-like body by the method for chamfering the plate-like body according to any one of claims 1 to 7, comprising a chamfering table for fixing the plate-like body, and a plate-like body. A plate-like chamfering device comprising at least two chamfering grindstones for one side.
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