TW201609429A - Glass laminate and support substrate equipped with inorganic film, method for manufacturing said glass laminate and said support substrate, and method for manufacturing electronic device - Google Patents

Abstract

The present invention pertains to a support substrate equipped with an inorganic film and characterised by: having a support substrate and an inorganic film which is formed on the support substrate; the inorganic film comprising a plurality of island parts interspersed on the support substrate; and having exposed parts of the support substrate where the inorganic film has not been formed, which are connected to the outside in the direction of the surface of the support substrate or having protrusions and recessions comprising a plurality of protruding parts that comprise thick sections and further comprising recessed parts that comprise thin sections, said recessed parts being connected to the outside in the direction of the surface of the support substrate. The support substrate equipped with an inorganic film adheres well to a glass substrate, with which a device is formed, and is capable of preventing the occurrence of bubbles between the inorganic film and the glass substrate when processing is performed at a high temperature.

Description

Support substrate and glass laminate with inorganic film, and manufacturing method therefor and electronic device manufacturing method

The present invention relates to a support substrate with an inorganic film used for manufacturing an electronic device such as a liquid crystal panel or an organic EL (Electroluminescence) panel using a glass substrate, and a glass substrate laminated on the support substrate with the inorganic film. The glass laminate, and the manufacturing method thereof and the manufacturing method of the electronic device.

In recent years, electronic devices such as photovoltaic cells (PV), liquid crystal displays (LCDs), and organic EL panels (OLED (Organic Light Emitting Diodes)) The thinning and light weight of electronic equipment are constantly evolving. In response to this, the thinning of the glass substrate for the electronic devices is continuously advanced.

On the other hand, if the strength of the glass substrate is insufficient due to the thinning, the rationality of the glass substrate is lowered in the manufacturing process of the electronic device.

Therefore, recently, in order to cope with the above problems, an electronic device is manufactured on a glass substrate in a state in which a glass substrate is supported by a support substrate. For example, a support substrate having an inorganic film (adsorption film) formed on a support substrate made of glass is prepared, and a glass substrate is laminated on the inorganic film of the support substrate to be adhered thereto. After the electronic device is fabricated on the glass substrate of the laminate, the laminate is peeled off from the laminate (Patent Documents 1 and 2).

According to these methods, it is revealed that even if a thin glass substrate is used, It is also possible to improve the handleability, achieve proper positioning, and, after a specific treatment, easily peel the glass substrate on which the component is disposed from the laminate.

Further, Patent Document 3 discloses that when an electronic device is manufactured on a glass substrate supported by a support substrate, a strip-like rough surface and a strip shape are alternately provided on a contact surface of the support substrate with the glass substrate, for example. By smoothing the surface or the like, a region having a relatively strong adhesion force and a weak region are provided, whereby peeling of the glass substrate from the laminate can be more easily achieved.

Prior technical literature Patent literature

Patent Document 1: Japanese Patent Laid-Open Publication No. 2011-184284

Patent Document 2: Japanese Patent Laid-Open No. 2011-201725

Patent Document 3: Japanese Patent Laid-Open No. 2011-162432

Further, in recent years, with the demand for high performance of electronic devices, it is desirable to perform processing under higher temperature conditions (for example, 450 ° C or higher) when manufacturing an electronic device.

However, if a laminated system in which a glass substrate is laminated on a support substrate with an inorganic film is subjected to a high temperature treatment at 450 ° C or higher, particularly, a high temperature treatment such as 500 to 600 ° C, there is a case where it is attached or contained in the glass. The gas of the substrate or the inorganic film is released, thereby generating a plurality of bubbles between the glass substrate and the inorganic film.

Further, the support substrate with the inorganic film described above is also inferior in adhesion to the glass substrate on the surface layer of the inorganic film. In other words, even if the inorganic film of the support substrate is overlapped with the glass substrate, they are not intimately adhered to each other, and they are not adhered to each other even by mechanical pressurization, or may be accidentally peeled off.

The object of the present invention is to solve the problems of the prior art, and to provide a method for suppressing foaming between a glass substrate and an inorganic film when performing treatment at a high temperature, and further inorganic A glass laminate comprising a support substrate with an inorganic film and a support substrate on which the inorganic film is bonded, and a support substrate and a glass laminate for the inorganic film And a method of manufacturing an electronic device.

In order to achieve the above object, a first aspect of the support substrate with an inorganic film of the present invention provides a support substrate with an inorganic film, comprising: a support substrate; and an inorganic film formed on the support substrate, and the inorganic The film includes a plurality of island portions spread on the support substrate, and an exposed portion of the support substrate on which the inorganic film is not formed is connected to the outside in a surface direction of the support substrate.

In the first aspect of the support substrate with an inorganic film of the present invention, it is preferable that the height of the island portion is 40 nm or less.

Moreover, it is preferable that the island portion is formed at a position where the distance between the end portions is within 20 μm, and other island portions are formed.

Further, it is preferable that the area of each of the island portions is 0.1 to 10000 μm ² .

Furthermore, it is preferable that the total area of the plurality of island portions is 11 to 80% with respect to the area ratio of the surface of the support substrate.

Moreover, the second aspect of the support substrate with an inorganic film of the present invention provides a support substrate with an inorganic film, comprising: a support substrate; and an inorganic film formed on the support substrate, wherein the inorganic film has The plurality of convex portions and the concave and convex portions, the plurality of convex portions including a thick portion, the concave portion including a thin portion, and the concave portion is connected to the outside in a direction of a surface of the support substrate.

In the second aspect of the support substrate with an inorganic film of the present invention, it is preferable that the difference in height between the concavities and convexities is 40 nm or less.

Further, it is preferable that the convex portion is formed at a position where the distance between the end portions is within 20 μm. He is convex.

Further, it is preferable that the area of each of the convex portions is 0.1 to 10000 μm ² .

Further, it is preferable that a total area of the plurality of convex portions is 11 to 80% with respect to an area ratio of a surface of the support substrate.

Moreover, the glass laminate system of the present invention provides a glass laminate in which a glass substrate is laminated on the inorganic film of the support substrate with an inorganic film of the present invention.

Further, a first aspect of the method for producing a support substrate with an inorganic film according to the present invention provides a method for producing a support substrate with an inorganic film, characterized in that a film containing an inorganic substance is formed on a surface of the support substrate, and The film containing the inorganic material is etched, thereby forming an inorganic film including a plurality of island portions spread on the support substrate.

Further, a second aspect of the method for producing a support substrate with an inorganic film of the present invention provides a method for producing a support substrate with an inorganic film, characterized in that a film containing an inorganic substance is formed on a surface of the support substrate, and The film containing the inorganic material is etched, whereby the film containing the inorganic material forms irregularities including a plurality of convex portions and concave portions, and the plurality of convex portions include thick portions, and the concave portions include thin portions.

Further, a third aspect of the method for producing a support substrate with an inorganic film of the present invention provides a method for producing a support substrate with an inorganic film, characterized in that a resin which spreads a plurality of non-formed portions is formed on the surface of the support substrate. In the film, an inorganic film is formed on the support substrate by using the resin film as a mask, and then the resin film is removed.

In the third aspect of the method for producing a support substrate with an inorganic film of the present invention, it is preferred that a base inorganic film is formed on the surface of the support substrate before the resin film is formed.

Moreover, the method for producing a glass laminate according to the present invention provides a glass laminate of an inorganic film laminated glass substrate on the support substrate with the inorganic film after the support substrate with the inorganic film is produced by the production method of the present invention. The manufacturing method of the body.

Furthermore, the method of manufacturing an electronic device of the present invention provides an electronic device system A method for producing a glass laminate according to the present invention described above.

The glass laminate using the support substrate with an inorganic film of the present invention provides good adhesion when forming an electronic device on a glass substrate, and can be processed at a high temperature of over 450 ° C even when manufacturing an electronic device. The generation of bubbles between the glass substrate and the inorganic film is suppressed.

10‧‧‧Support substrate with inorganic film

12‧‧‧Support substrate

14‧‧‧Inorganic film

16‧‧‧ glass substrate

20‧‧‧Glass laminate

24‧‧‧Inorganic film

24a‧‧‧ convex

24b‧‧‧ recess

30‧‧‧Support substrate with inorganic film

32‧‧‧ resin film

34‧‧‧ film

D‧‧‧ interval

S‧‧‧ Round

T‧‧‧thickness

Fig. 1(A) is a plan view schematically showing an example of a support substrate with an inorganic film of the present invention, and Fig. 1(B) is a schematic cross-sectional view taken along line bb of Fig. 1(A), and Fig. 1(C) conceptually A cross-sectional view showing a side view of an example of the glass laminate of the present invention, and Fig. 1(D) is a cross-sectional view conceptually showing a side view of another example of the support substrate with an inorganic film of the present invention.

Fig. 2 is a plan view conceptually showing another example of the support substrate with an inorganic film of the present invention.

3(A) to 3(F) are conceptual views for explaining an example of a method for producing an inorganic film-attached support substrate and a glass laminate according to the present invention, and Fig. 3(A) is a cross-sectional view of the side surface, and Fig. 3 (Fig. 3) B) is a plan view, FIG. 3(C) is a cross-sectional view taken along line cc of FIG. 3(B), and FIGS. 3(D) to 3(F) are cross-sectional views of the side.

Hereinafter, the manufacturing method of the inorganic substrate-supporting substrate and the glass laminate of the present invention, and the inorganic substrate-supporting substrate of the present invention and the manufacture of the glass laminate are described in detail based on the preferred embodiments shown in the accompanying drawings. The method and the method of manufacturing the electronic device will be described.

1(A) and 1(B), an example of a support substrate with an inorganic film of the present invention is conceptually shown. 1(A) is a plan view of a support substrate with an inorganic film of the present invention, and FIG. 1(B) is a schematic cross-sectional view taken along line b-b of FIG. 1(A).

The support substrate 10 with an inorganic film of the present invention is used for manufacturing an electron using a glass substrate When the device or the like is used as the support substrate for supporting the glass substrate, the support substrate 12 and the inorganic film 14 are basically included.

As shown conceptually in FIG. 1(C), such an inorganic film-attached supporting substrate 10 is laminated on a glass substrate 16 of an inorganic film 14 and adhered thereto to form a glass laminate 20 of the present invention for use in manufacturing. An electronic device using the glass substrate 16 is used.

Here, in the support substrate 10 with an inorganic film of the present invention, the inorganic film 14 is formed by patterning in an island shape, and the exposed portion of the support substrate 12 (the portion of the support substrate 12 where the inorganic film 14 is not formed) It is formed so as to be connected (connected) to the outside of the support substrate 10 (the following glass laminate 20) with the inorganic film in the surface direction of the support substrate 12. This aspect will be described in detail below.

The support substrate 12 mainly supports the glass substrate 16 in the glass laminate 20 shown in FIG. 1(C) to prevent damage or deformation of the glass substrate 16.

In the support substrate 10 with an inorganic film of the present invention, various types of plate members (plate-like members) such as a glass substrate, a plastic substrate, and a metal substrate such as a SUS (Steel Use Stainless) substrate can be used as the support substrate 12.

Here, in the case of manufacturing an electronic device using the glass laminate 20, the support substrate 12 is preferably formed of a material having a small difference in linear expansion coefficient from the glass substrate 16 in the case of a step accompanying the heat treatment.

Specifically, the difference between the average linear expansion coefficient (hereinafter simply referred to as "average linear expansion coefficient") of the support substrate 12 and the glass substrate 16 at 25 to 300 ° C is preferably 500 × 10 ^-7 / ° C or less, more preferably of 300 × 10 ^-7 / ℃ or less, particularly preferably 200 × 10 ^-7 / ℃ or less.

By setting the difference between the average linear expansion counts of the support substrate 12 and the glass substrate 16 to 500 × 10 ^-7 /° C or less, it is possible to prevent the glass laminate 20 from being strongly warped during heating and cooling in the forming step of the electronic device. song.

In consideration of the above, the support substrate 12 is preferably formed of the same material as the glass substrate 16, and the support substrate 12 is more preferably a glass substrate. Particularly good for the support substrate 12 is included A glass substrate of the same glass material as the glass substrate 16.

The thickness of the support substrate 12 may be thicker than the glass substrate 16 described below, or may be thinner or the same.

Preferably, the thickness of the support substrate 12 is selected based on the thickness of the glass substrate 16, the thickness of the inorganic film 14, and the thickness of the glass laminate 20 described below. For example, when the manufacturing step of the electronic device is designed to handle a substrate of 0.5 mm, and the sum of the thickness of the glass substrate 16 and the thickness of the inorganic film 14 is 0.1 mm, the thickness of the support substrate 12 is set to 0.4 mm.

In the usual case, the thickness of the support substrate 12 is preferably 0.2 to 5 mm.

Further, when the support substrate 12 is a glass substrate, the thickness of the support substrate 12 is preferably 0.08 mm or more for reasons of easy handling and difficulty in cracking. In addition, when peeling is performed after forming a member for an electronic device, it is desirable that the thickness of the glass substrate is 1.0 mm or less for the reason that the rigidity is appropriately flexed without being broken.

In the support substrate 10 with an inorganic film, an inorganic film 14 is formed on one surface (one surface of the main surface) of the support substrate 12.

The inorganic film 14 is a film (adsorption film) in which the glass substrate 16 is laminated on the support substrate 10 with the inorganic film and the glass substrate 16 is peelably adhered. In other words, the inorganic film 14 is a film having a function of being easily peelable, and having a function of laminating and adhering (bonding) the glass substrate 16 to the support substrate 10 with the inorganic film.

The inorganic film 14 exhibits excellent heat resistance. Therefore, even if the glass laminate 20 is exposed to high temperature conditions, the layer itself is less likely to undergo chemical change, and chemical bonding is less likely to occur between the glass substrate 16 described below, and the inorganic film 14 is less likely to be caused by heavy peeling. Adhesion of the glass substrate 16. In addition, the term "heavy peeling" means that the peel strength at the interface between the inorganic film 14 and the glass substrate 16 is greater than the peel strength of the interface between the support substrate 12 and the inorganic film 14, and the strength (body strength) of the material itself of the inorganic film 14. Either. When the interface between the inorganic film 14 and the glass substrate 16 is heavily peeled off, the components of the inorganic film 14 tend to adhere to the surface of the glass substrate 16, and the surface thereof is easily cleaned. The inorganic film 14 is directed to the glass substrate The adhesion of the surface of the 16 is the case where the inorganic film 14 as a whole adheres to the surface of the glass substrate 16 and the surface of the inorganic film 14 is damaged and a part of the surface of the inorganic film 14 is partially adhered to the surface of the glass substrate 16.

The inorganic film 14 can be made of a conventionally used inorganic film-containing supporting substrate which is used for supporting an electronic device or the like to support a glass substrate for forming an electronic device.

Specifically, it is preferable to contain at least one selected from the group consisting of oxides, nitrides, nitrogen oxides, carbides, carbonitrides, tellurides, and fluorides.

Examples of the oxide, the nitride, and the oxynitride include Si, Hf, Zr, Ta, Ti, Y, Nb, Na, Co, Al, Zn, Pb, Mg, Bi, La, Ce, and Pr. An oxide, a nitride, or an oxynitride of an element of one or more of Sm, Eu, Gd, Dy, Er, Sr, Sn, In, Ce, and Ba. More specifically, titanium oxide (TiO ₂ ), indium oxide (In ₂ O ₃ ), tin oxide (SnO ₂ ), zinc oxide (ZnO), gallium oxide (Ga ₂ O ₃ ), indium tin oxide (ITO) ), indium zinc oxide (IZO), zinc tin oxide (ZTO), gallium-doped zinc oxide (GZO), indium oxide lanthanum (ICO), tantalum nitride (Si ₃ N ₄ ), titanium nitride (TiN), Tungsten nitride (WN), chromium nitride (CrN), boron nitride (BN), molybdenum nitride (MoN), aluminum nitride (AlN), zirconium nitride (ZrN), and the like.

Examples of the carbides and carbonitrides include carbides and carbonitrides of one or more elements selected from the group consisting of Ti, W, Si, Zr, and Nb. More specifically, titanium carbide (TiC), tungsten carbide (WC), tantalum carbide (SiC), niobium carbide (NbC), zirconium carbide (ZrC), titanium carbonitride (TiCN), tungsten carbonitride (for example) may be mentioned. WCN), niobium carbonitride (SiCN), niobium carbonitride (NbCN), zirconium carbonitride (ZrCN), and the like.

Examples of the telluride include a telluride selected from the group consisting of one or more of W, Fe, Mn, Mg, Mo, Cr, Ru, Re, Co, Ni, Ta, Ti, Zr, and Ba.

The fluoride is, for example, a fluoride selected from the group consisting of one or more of Mg, Y, La, and Ba.

In the manufacturing process of the electronic device, the glass laminate 20 is heat-treated and has good peelability from the glass substrate 16, and has good adhesion to the processing before heat treatment, and changes in film properties due to heat treatment. It is easy to use and can be easily reused, and can be easily and inexpensively obtained. In terms of control such as film formation, etc., cerium carbide, indium tin oxide, and indium lanthanum oxide are preferably exemplified.

The average linear expansion coefficient of the inorganic film 14 may be appropriately set in accordance with the material for forming the support substrate 12 or the like.

For example, when a glass substrate is used as the support substrate 12, the average linear expansion coefficient thereof is preferably 10 × 10 ^-7 to 200 × 10 ^-7 / ° C. When the ratio is within this range, the difference between the average linear expansion coefficient and the glass substrate becomes small, and the positional deviation of the glass substrate 16 and the support substrate 10 with the inorganic film in a high temperature environment can be further suppressed.

The inorganic film 14 preferably contains at least one of the above inorganic compounds as a main component. Here, the main component means that the total content thereof is 90% by mass or more, preferably 98% by mass or more, more preferably 99% by mass or more, and particularly preferably 99.999% by mass or more based on the total amount of the inorganic film 14. .

Further, the inorganic film 14 is described as a single layer in FIG. 1, but may have a laminated structure of two or more layers. Further, in the case of a laminated structure of two or more layers, each layer may have a different composition.

Further, the inorganic film 14 is provided on a surface of the support substrate 12 having a region where the inorganic film 14 is not formed (a region where the island of the inorganic film 14 is not dispersed).

Here, in the support substrate 10 with an inorganic film of the present invention, the island-shaped inorganic film 14 is formed in such a manner that the inorganic film 14 is formed by patterning in an island shape, and the inorganic film 14 is not formed. The exposed portion of the support substrate 12 is connected to the outside in the direction of the surface of the support substrate 12. According to the present invention, the inorganic film 14 and the glass substrate 16 are ensured to have good adhesion, and the foaming between the inorganic film 14 and the glass substrate 16 during high-temperature treatment is suppressed.

This aspect will be described in detail below.

As is conceptually shown in FIG. 1(C), the glass laminate 20 of the present invention is formed by laminating the glass substrate 16 of the inorganic film 14 of the support substrate 10 with the inorganic film of the present invention. .

The glass substrate 16 can be an ordinary one, and for example, a glass suitable for the type of electronic device using the glass substrate 16 (glass laminate 20) such as an LCD or an OLED, or a manufacturing step thereof can be appropriately selected.

As an example, alkali-free borosilicate glass, borosilicate glass, soda lime glass, high cerium oxide glass, and other oxide-based glass containing cerium oxide as a main component are preferably exemplified. Further, the oxide-based glass is preferably a glass having a content of cerium oxide of 40 to 90% by mass in terms of oxide.

For example, when the glass substrate 16 is used in an LCD, since the elution of the alkali metal component is liable to affect the liquid crystal, a glass which does not substantially contain an alkali metal component (alkali-free glass (but usually contains an alkaline earth metal component) is used. )).

The glass substrate 16 is obtained by melting a glass raw material and molding the molten glass into a plate shape. Such a molding method may be an ordinary one, and for example, a float method, a fusion method, a flow hole down method, a rich method, a Luber method, or the like may be used. Further, the glass substrate having a particularly small thickness is obtained by the following method (re-draw method): heating the glass temporarily formed into a plate shape to a temperature at which it can be formed, and stretching it by stretching or the like to make it thin .

The thickness of the glass substrate 16 may be appropriately set depending on the use or size of the glass substrate 16.

Specifically, the thickness of the glass substrate 16 is preferably 0.8 mm or less, more preferably 0.3 mm or less, and particularly preferably 0.15 mm or less from the viewpoint of reduction in thickness and/or weight reduction of the glass substrate 16 . By setting the thickness of the glass substrate 16 to 0.8 mm or less, the requirements for thinning and/or weight reduction of the glass substrate 16 can be preferably satisfied. Moreover, by setting the thickness of the glass substrate 16 to 0.3 mm or less, it is possible to impart good flexibility to the glass substrate 16. Further, borrow The glass substrate 16 can be wound into a roll shape by setting the thickness of the glass substrate 16 to 0.15 mm or less.

Moreover, the thickness of the glass substrate 16 is preferably 0.03 mm or more for the reason that the production of the glass substrate 16 is easy and the treatment of the glass substrate 16 is easy.

Further, the glass substrate 16 may include two or more layers. In this case, the material forming each layer may be the same material or a different material. In this case, the "thickness of the glass substrate" is the total thickness of all the layers.

As described above, in the inorganic substrate-supporting substrate 10 (glass laminate 20) of the present invention, the island-shaped inorganic film 14 is formed in such a manner that the inorganic film 14 is patterned by being spread in an island shape. The exposed portion of the support substrate 12 on which the inorganic film 14 is not formed is connected to the outside in the direction of the surface of the support substrate 12.

In the support substrate 10 with an inorganic film according to the present invention, when the glass substrate 16 is laminated on the inorganic film 14 to form the glass laminate 20, the adhesion between the inorganic film 14 and the glass substrate 16 can be ensured. Further, even if heat treatment at a high temperature is performed to form an electronic device on the glass substrate 16, generation of bubbles between the inorganic film 14 and the glass substrate 16 can be suppressed. Further, in the support substrate 10 with an inorganic film of the present invention, the inorganic film 14 and the glass substrate 16 are also excellent in peelability after heat treatment of the glass laminate 20 in order to form an electronic device on the glass substrate 16 (having good peelability) Sex).

As a support for forming an electronic device on a glass substrate of a film, a support substrate with an inorganic film formed by forming an inorganic film on a support substrate as disclosed in Patent Document 1 or Patent Document 2 is known. By using the support substrate with the inorganic film, even in the case of using a glass substrate of a film, it is possible to ensure goodness of rationality, and it is possible to accurately manufacture an electronic device.

Here, in recent years, in order to realize high performance of an electronic device, it is desirable to perform processing under a high temperature condition of 450 ° C or higher when manufacturing an electronic device. However, the prior support substrate with an inorganic film is subjected to a high temperature treatment of 450 ° C or higher, particularly, for example, 500~ At a high temperature of 600 ° C, there is a case where a gas adhering or contained in a glass substrate or an inorganic film is released, and a plurality of bubbles are generated between the glass substrate and the inorganic film.

Further, in the conventional support substrate with an inorganic film, when the inorganic film and the glass substrate are laminated, the adhesion between the inorganic film and the glass substrate is insufficient, and even if the inorganic film of the support substrate is overlapped with the glass substrate, they are not only It does not naturally adhere to each other, and it does not adhere to each other even if it is mechanically pressurized, or it is easy to peel off.

On the other hand, the inorganic substrate-supporting substrate 10 of the present invention is formed into an island-shaped inorganic film 14 in such a manner that the inorganic film 14 is patterned by patterning the surface of the support substrate 12 in an island shape, and is not formed. The exposed portion of the support substrate 12 on which the inorganic film 14 is formed is connected to the outside in the direction of the surface of the support substrate 12.

According to the present invention, it is possible to form a gas which is released from the glass substrate 16 or the inorganic film 14 to the outside between the inorganic films 14 which are formed in an island shape in the surface direction of the support substrate 12. Discharge channel. Therefore, even if the glass laminate 20 is treated at a high temperature such as 600 ° C, the gas does not remain between the inorganic film 14 and the glass substrate 16, and bubbles generated between the inorganic film 14 and the glass substrate 16 can be suppressed.

Further, the island-shaped inorganic film 14 is patterned and dispersed, whereby the convex portions that prevent the inorganic film 14 from adhering to the glass substrate 16 are less, and the inorganic film 14 and the glass substrate 16 can be sufficiently ensured. Contact area.

Further, since the inorganic film 14 and the glass substrate 16 are not in contact with each other (in a dotted shape), the peeling property after heat-treating the glass laminate 20 at a high temperature is also good.

In the support substrate 10 with an inorganic film of the present invention, the thickness t of the inorganic film 14 (the height t of the island of the inorganic film 14) is as long as the glass substrate 16 of the laminated layer is based on the size of the island (island portion) of the inorganic film 14. The type, the material for forming the inorganic film 14, and the like may be appropriately set.

Here, the thickness t of the inorganic film 14 is preferably 40 nm or less, more preferably 30 nm or less. By setting the thickness t of the inorganic film 14 to 40 nm or less, it is preferable to prevent the layer from being laminated to the glass. When the body 20 is subjected to the wet treatment, the treatment liquid penetrates between the glass substrate 16 and the support substrate 12, whereby the productivity of the support substrate 10 with the inorganic film can be improved, and the layering property of the glass substrate 16 can be further improved. Better words.

Further, the thickness t of the inorganic film 14 is preferably 5 nm or more, and more preferably 10 nm or more. By setting the thickness t of the inorganic film 14 to 5 nm or more, it is possible to prevent the peeling property from being lowered due to the direct contact between the support substrate 12 and the glass substrate 16 during the heat treatment of the glass laminate 20, and it is possible to prevent it from being more preferably prevented. It is preferable to generate bubbles between the inorganic film 14 and the glass substrate 16 in terms of the above.

Further, the formation density of the inorganic film 14 which is dispersed in the island shape is appropriately set according to the thickness t of the inorganic film 14, the size of the island of the inorganic film 14, the type of the glass substrate 16 to be laminated, the material for forming the inorganic film 14, and the like. can. Here, the inorganic film 14 which is interspersed in an island shape is preferably formed in such a manner that other island-shaped inorganic films 14 (islands of the inorganic film 14) exist at positions where the distance d between the end portions (edges) is within 20 μm.

If there is a region where the interval between the islands of the inorganic film 14 is large, there is a case where the two are in contact due to the deflection of the support substrate 12 and/or the glass substrate 16, and the contact is performed when the glass laminate 20 is heat-treated. The department is firmly attached. When such a bonding is performed, when the support substrate 10 with the inorganic film is peeled off from the glass substrate 16, the peeling property is remarkably deteriorated, and the support substrate 10 and the glass substrate 16 with the inorganic film are not peeled off depending on the case.

On the other hand, the inorganic film 14 dispersed in an island shape is formed in such a manner that the distance d between the end portions is 20 μm or less, and the island-shaped inorganic film 14 is preferably present at a position within 10 μm. The bonding of the support substrate 12 and the glass substrate 16 is prevented.

Further, in order to obtain the above-described effects, it is preferable to draw the exposed surface of the support substrate 12 in which the island-shaped inorganic film 14 is not formed, as is conceptually shown in plan view in Fig. 2 . The island-shaped inorganic film 14 is dispersed so as to have a diameter S of 20 μm or more, preferably 10 μm or more in diameter.

In other words, it is preferable to disperse the island-shaped inorganic film 14 in such a manner that it is not shaped When the exposed surface of the support substrate 12 in which the island-shaped inorganic film 14 is formed is drawn with a circle S having the largest diameter inscribed in the end portion of the island-shaped inorganic film 14, the diameter of the circle S is 20 μm or less.

Further, in the examples shown in FIG. 1(A) and FIG. 1(B), the inorganic film 14 dispersed in an island shape is regularly arranged (patterned). However, in the support substrate with an inorganic film of the present invention, the inorganic film 14 dispersed in an island shape may be regularly arranged, or may be arranged irregularly as shown in FIG. 2 described above.

Further, the inorganic film 14 dispersed in an island shape is preferably uniformly dispersed and spread on the surface of the support substrate 12, whether it is a regular arrangement or an irregular arrangement.

In the inorganic substrate-supporting substrate 10 of the present invention, the area of one island-shaped inorganic film 14 (including one island of the inorganic film) is as long as the thickness t of the inorganic film 14 and the type of the glass substrate 16 to be laminated. The material for forming the inorganic film 14 or the like may be appropriately set. Here, the area of each of the island-shaped inorganic films 14 is preferably from 0.1 to 10,000 μm ² , more preferably from 0.1 to 100 μm ² .

By setting the area of one island-shaped inorganic film 14 to 0.1 μm ² or more, the adhesion between the inorganic film 14 and the glass substrate 16 can be improved, and the inorganic film 14 can be lowered by the ease of patterning or the like. The cost of formation is preferred in terms of the above.

In addition, by setting the area of one island-shaped inorganic film 14 to 10000 μm ² or less, generation of bubbles between the island-shaped inorganic film 14 and the glass substrate 16 can be prevented, and the following laminated body can be prevented from being used. When the electronic device is produced, it is considered to be uneven due to the island-shaped inorganic film 14, and it is preferable in terms of the above.

In addition, the area of the one island-shaped inorganic film 14 is the area of one island including the inorganic film 14 on the surface of the support substrate 12.

Further, the total area of the island-shaped inorganic film 14 is also appropriately selected according to the thickness t of the inorganic film 14, the size of one island-shaped inorganic film 14, the type of the glass substrate 16 to be laminated, and the material for forming the inorganic film 14. Ground settings can be. Here, the total area of the inorganic film 14 including a plurality of islands (island portions) is preferably an area ratio with respect to the surface of the support substrate 12 (inorganic The film/support substrate is counted as 11 to 80%, more preferably 18 to 70%.

By setting the total area of the inorganic film 14 to 11% or more with respect to the surface area of the support substrate 12, the adhesion between the inorganic film 14 and the glass substrate 16 can be improved, and the glass laminate can be formed. The peelability after the heat treatment of 20 is good, and it is preferable in terms of the above.

In addition, by setting the total area of the inorganic film 14 to 80% or less with respect to the surface area of the support substrate 12, generation of bubbles between the inorganic film 14 and the glass substrate 16 can be prevented. It is better.

Further, as shown in FIG. 1(B), in the support substrate 10 with an inorganic film, the planar shape of the island-shaped inorganic film 14 (the shape of the surface of the support substrate 12) is square, but in the present invention, The island-shaped inorganic film 14 can utilize various planar shapes.

As an example, the planar shape of the island-shaped inorganic film 14 may be a circular shape, an elliptical shape, a triangular shape, a rectangular shape, a pentagon shape, a hexagonal shape, a polygonal shape or the like, or may be an amorphous shape. A blend of such shapes, including squares.

The support substrate 10 with an inorganic film shown in FIG. 1(A) and FIG. 1(B) has a region in which the inorganic film 14 is spread on the surface of the support substrate 12 in an island shape, and the support substrate 12 is exposed.

However, the support substrate with the inorganic film of the present invention may also cover the entire surface of the support substrate 12 by an inorganic film.

In other words, the inorganic film 24 may have a shape including a plurality of convex portions 24a and concave portions 24b, as in the support substrate 30 with an inorganic film as shown in Fig. 1(D). The convex portion 24a includes a thick portion, and the concave portion 24b includes a thin portion, and the concave portion 24b including the thin portion is connected to the outside in the direction of the surface of the support substrate 12. Even in this configuration, the same effects as those of the support substrate 10 with an inorganic film shown in FIGS. 1(A) and 1(B) can be obtained.

In the support substrate 30 with an inorganic film shown in Fig. 1(D), the height of the convex portion 24a (the difference between the heights of the convex portion 24a and the concave portion 24b), the interval between the convex portions 24a, and the convex portion 24a are different. The area and the total area of the plurality of convex portions 24a are based on the island-shaped inorganic film 14 in the support substrate 10 with the inorganic film.

Here, in the support substrate 30 with an inorganic film shown in FIG. 1(D), the entire surface of the support substrate 10 is covered with the inorganic film 24. Therefore, even if the support substrate 12 and/or the glass substrate 16 are bent and the two are in contact with each other, they are not fixed to each other. Therefore, in the support substrate 30 with the inorganic film, even if the interval between the formation of the convex portions 24a (corresponding to the distance d between the end portions of the inorganic film 14) becomes larger than 20 μm, the laminated body 20 can be prevented from being formed. When the heat treatment, the support substrate 12 and the glass substrate 16 are bonded together, and good peelability can be obtained.

Further, in the support substrate 30 with the inorganic film, the thickness of the inorganic film 24 at the concave portion 24b is preferably 5 to 30 nm, more preferably 10 to 20 nm.

By setting the thickness of the inorganic film 24 in the concave portion 24b to the above range, it is possible to more reliably prevent the bonding between the support substrate 12 and the glass substrate 16 when the glass laminate 20 is heat-treated, thereby obtaining more excellent peeling. Sex is better in terms of the above.

Hereinafter, an example of a manufacturing method of the present invention for producing the inorganic substrate-attached supporting substrate 10 shown in FIGS. 1(A) and 1(B) will be described with reference to FIGS. 3(A) to 3(F).

First, the support substrate 12 is prepared as shown in FIG. 3(A), and a resin film 32 to be a mask is formed on the surface thereof as shown in FIGS. 3(B) and 3(C).

The resin film 32 is formed by dispersing a plurality of non-formed portions on the surface of the support substrate 12, and the resin film 32 is continuous to the outside in the direction of the support substrate 12. In the examples shown in FIGS. 3(B) and 3(C), the resin film 32 is formed in a square lattice pattern.

As a method of forming the resin film 32 to be masked, various known methods corresponding to the material for forming the resin film 32 can be used. As an example, a method of printing by screen printing, flexographic printing, lithography, gravure printing, inkjet, or the like can be exemplified. Alternatively, the resin film 32 to be a mask may be formed by photolithography or photolithography of etching.

Further, before the formation of the resin film 32, a base inorganic film is formed on the entire surface of the support substrate 12, whereby the inorganic film 24 having the entire surface as shown in Fig. 1(D) can be produced. The support substrate 30 of the organic film, the inorganic film 24 of the entire surface has irregularities including a plurality of convex portions 24a and concave portions 24b, and the plurality of convex portions 24a include a thick portion, and the concave portion 24b includes a thin portion. That is, the thickness of the base inorganic film becomes the thickness of the inorganic film 24 at the concave portion 24b.

The material for forming the base inorganic film may be the same inorganic material as the inorganic film 14, or may be an inorganic substance different from the inorganic film 14.

Further, the formation of the underlying inorganic film may be carried out by a known method corresponding to the material to be formed, similarly to the film 34 to be formed into the inorganic film 14.

Then, as shown in FIG. 3(D), the resin film 32 is used as a mask to form a film 34 which becomes the inorganic film 14.

The method of forming the film 34 may be any coating method such as sputtering, vacuum vapor deposition (normal temperature, high temperature), CVD (Chemical Vapor Deposition), plasma CVD, or sol-gel method. The film forming material is a target film, and various known methods can be used.

Then, the resin film 32 is removed (stripped) to form the inorganic film 14, and as shown in FIG. 3(E), the inorganic substrate-supporting substrate 10 on which the rectangular island-shaped inorganic film 14 is dispersed on the surface of the support substrate 12 is formed. .

The method of removing the resin film 32 can also be carried out by various known methods corresponding to the material for forming the resin film 32. As an example, wet etching, a method of removing a liquid such as pure water, a brush, or the like can be exemplified.

Further, it is also possible to polish the surface of the inorganic film 14 (the convex portion 24a of the inorganic film 24) after forming the island-shaped inorganic film 14.

Further, as shown in FIG. 3(F), the glass substrate 16 is laminated on the inorganic film 14 of the support substrate 10 with the inorganic film and adhered thereto to form the glass laminate 20 of the present invention.

The laminate and adhesion of the glass substrate 16 can be carried out by various known methods depending on the material for forming the inorganic film 14. As an example, the following method can be mentioned: it is attached under normal pressure environment After the support substrate 10 of the inorganic film and the glass substrate 16 are overlapped, they are pressure-bonded using a roll or a press machine. It is preferable that the support substrate 10 with the inorganic film and the glass substrate 16 are in close contact with each other with a good adhesion by pressure bonding using a roll or a press machine. Further, as a method of laminating the glass substrate 16, it is also preferable to use pressure bonding by a vacuum lamination method or a vacuum press method.

The support substrate with an inorganic film of the present invention can also be formed by various methods. As an example, a method using photolithography or a method of patterning by laser can be exemplified.

These methods are first to form a film which becomes an inorganic substance of the inorganic film 14 on the surface of the support substrate 12. The method of forming the film can be carried out in the same manner as in the prior art by various known methods.

Then, the inorganic film is etched to form an inorganic film-attached support substrate 10 on which the island-shaped inorganic film 14 is dispersed on the surface of the support substrate 12.

The etching method of the inorganic film can utilize various well-known methods corresponding to an inorganic substance.

As an example, a method of forming a resist layer on the surface of a film of an inorganic material by spin coating or die coating can be exemplified. Then, the resist layer is subjected to pattern exposure by a known method such as mask exposure, and further developed to form a mask containing a resist. Then, the film of the inorganic substance in which the mask portion is not formed is removed by wet etching or dry etching, thereby forming an island-shaped inorganic film 14 dispersed on the surface of the support substrate 12. Further, the remaining resist layer is removed, and the inorganic substrate-attached support substrate 10 on which the island-shaped inorganic film 14 is dispersed on the surface of the support substrate 12 is formed.

Further, a method of forming a mask by screen printing, flexographic printing, lithography, gravure printing, inkjet, or the like after film formation of an inorganic film may be exemplified. Then, a film of an inorganic substance in which no mask portion is formed is removed by wet etching to form an island-shaped inorganic film 14 dispersed on the surface of the support substrate 12. Further, the remaining mask is removed, and the inorganic film supporting the island-shaped inorganic film 14 is formed on the surface of the support substrate 12. The substrate 10 is supported.

Further, a method of forming a film of an inorganic material and irradiating the film with laser light such as a YAG (Yttrium Aluminum Garnet) laser, a pseudo-molecular laser, or a carbon dioxide gas laser may be exemplified. The pattern is exposed, and a film of the excess inorganic substance is removed by ablation or the like, whereby the inorganic substrate-attached supporting substrate 10 on which the island-shaped inorganic film 14 is dispersed on the surface of the support substrate 12 is formed.

In the manufacturing method, by adjusting the etching degree of the inorganic film, the inorganic substrate-attached supporting substrate 30 having the entire surface of the inorganic film 24 as shown in FIG. 1(D) can be produced, and the entire surface of the inorganic film can be produced. 24 has concavities and convexities including a plurality of convex portions 24a and concave portions 24b, and the plurality of convex portions 24a include a thick portion, and the concave portion 24b includes a thin portion.

The inorganic substrate-attached glass substrate and the glass laminate system of the present invention are preferably used for manufacturing an LCD, an OLED, an electronic paper, a plasma display panel, a field emission panel, and a light emitting diode (Light Emitting Diode). Electronic devices such as panels, MEMS (Micro Electro Mechanical Systems), and shutter panels.

The electronic devices can be manufactured by the manufacturing method of the present invention.

The method for producing an electronic device of the present invention is a method for producing an electronic device using the method for producing a glass laminate of the present invention. As an example of the method for producing an electronic device of the present invention, a glass laminate is produced by the production method of the present invention, and a member for an electronic device such as an LCD or an OLED is formed on the surface of the glass substrate, and the member for the electronic device is formed. In the glass laminate, the support substrate with the inorganic film is peeled off, and an electronic device having a glass substrate and a component for an electronic device is manufactured.

Further, in the method of manufacturing an electronic device of the present invention, the member for the electronic device may be formed of a member corresponding to the electronic device to be manufactured by a known method corresponding to the electronic device to be manufactured.

The support substrate and the glass laminate with the inorganic film of the present invention, the method for producing the same, and the method for manufacturing the electronic device have been described in detail above, but the present invention is not limited thereto. It is a matter of course that various modifications and changes can be made without departing from the spirit and scope of the invention.

Example

Hereinafter, the present invention will be described in more detail with reference to specific embodiments of the invention.

[Example 1]

As a support substrate, a glass substrate (AN100 manufactured by Asahi Glass Co., Ltd.) containing an alkali-free borosilicate glass of 300 × 300 mm and a thickness of 0.5 mm was prepared.

A cellulose solution was applied to the entire surface of the support substrate by screen printing to form a square lattice pattern having a line width of 18 μm and a line width (center spacing) of 48 μm. Further, the pattern was dried by an oven to form a square lattice-shaped mask.

By using sputtering of a target of indium oxide (In ₂ O ₃ ) 90% by mass-tin oxide (SnO ₂ ) 10% by mass, the inorganic film 14 is formed on the surface of the support substrate by a film of 30 nm through a mask. Indium tin oxide.

Then, the mask is removed (peeled) by using pure water, brush removal, and ultrasonic cleaning, and the thickness is 30 nm and the side length is 30 μm at equal intervals of 18 μm in the orthogonal two-dimensional direction. The inorganic film supporting substrate of the square inorganic film (the area of the island portion (one island-shaped inorganic film) was 900 μm ² , and the area ratio of the inorganic film was 39%).

As a glass substrate, a glass substrate (AN100 manufactured by Asahi Glass Co., Ltd.) containing an alkali-free borosilicate glass of 300 × 300 mm and a thickness of 0.2 mm was prepared.

After the support substrate and the glass substrate with the inorganic film are sufficiently washed, the inorganic film surface is abutted and the two are laminated to form a glass laminate. In the glass laminate, the support substrate with the inorganic film was in good contact with the glass substrate, and no bubbles were generated. Further, the support substrate with the inorganic film and the glass substrate can be easily peeled off.

Further, the glass laminate was cut into 100 × 200 mm, washed again, and heat-treated at 600 ° C for 1 hour. After the heat treatment, the glass laminate is confirmed, and the result is No bubbles were generated inside. After the heat treatment, the support substrate with the inorganic film was peeled off from the glass substrate, and as a result, it was peeled off with substantially the same force as before the heat treatment.

[Embodiment 2]

As the supporting substrate, the same glass substrate as in Example 1 was prepared.

By using sputtering of a target of 20% by mass of indium oxide (In ₂ O ₃ ) and 20% by mass of cerium oxide (CeO ₂ ), 30 nm of indium oxide bismuth is formed on the entire surface of the support substrate (hereinafter, also referred to as A film for ICO).

Then, by using the usual photography of the photoresist and the exposure, the following mask pattern is formed: in the two-dimensional orthogonal direction, the side lengths are arranged at equal intervals of the end portions (the distance between the edges) of 10 μm. A square of 20 μm, and the non-formed portion has a square lattice shape.

Then, the ICO film was etched for 20 seconds using a mixture of ferric chloride and nitric acid.

After the etching of the ICO film is completed, the remaining mask (photoresist) is removed and washed, and an inorganic film having a substantially square inorganic film containing ICO is arranged at equal intervals in the orthogonal two-dimensional direction. Support substrate.

The area ratio of the inorganic film in the support substrate with the inorganic film produced with respect to the support substrate was measured using an optical microscope. As a result, the area of the island portion was 256 μm ² (the side length was 16 μm), and the area ratio of the inorganic film was 28%.

[Example 3]

In the same manner as in Example 2, an inorganic film containing a substantially square inorganic film containing ICO was formed at equal intervals in the two-dimensional direction orthogonal to each other in the same manner as in Example 2 except that the etching of the ICO film was 60 seconds. Support the substrate.

The area ratio of the inorganic film to the support substrate was measured in the same manner as in Example 2. As a result, the area of the island portion was 169 μm ² (the side length was 13 μm), and the area ratio of the inorganic film was 19%.

[Example 4]

The etching of the ICO film was set to 90 seconds, except that in the same manner as in Example 2. A support substrate with an inorganic film containing a substantially square inorganic film of ICO was formed at equal intervals in two directions orthogonal to each other.

The area ratio of the inorganic film to the support substrate was measured in the same manner as in Example 2. As a result, the area of the island portion was 121 μm ² (the side length was 11 μm), and the area ratio of the inorganic film was 13%.

[Example 5]

In the same manner as in Example 2, an inorganic film containing a substantially square inorganic film containing ICO was formed at equal intervals in the two-dimensional direction orthogonal to each other in the same manner as in Example 2 except that the etching of the ICO film was 120 seconds. Support the substrate.

Example 2 was measured in the same manner with respect to the inorganic film of the substrate supporting area, the result is an area of 49 m ² of the island portion (side length of 7 m), the inorganic film area of 5%.

[Embodiment 6]

The ICO film was formed by using a target of indium oxide (In ₂ O ₃ ) 70% by mass-CeO ₂ (30% by mass) as a target of sputtering, and in the same manner as in Example 2 A support substrate with an inorganic film containing an approximately square inorganic film of ICO (an etching time of the ICO film of 20 seconds) was formed at equal intervals in two directions orthogonal to each other.

The area ratio of the inorganic film to the support substrate was measured in the same manner as in Example 2. As a result, the area of the island portion was 361 μm ² (side length: 19 μm), and the area ratio of the inorganic film was 40%.

[Embodiment 7]

In the same manner as in Example 6, except that the etching of the ICO film was carried out for 60 seconds, an inorganic film having a substantially square inorganic film containing ICO was formed at equal intervals in the two-dimensional direction orthogonal to each other. Support substrate.

The area ratio of the inorganic film to the support substrate was measured in the same manner as in Example 2. As a result, the area of the island portion was 144 μm ² (the side length was 12 μm), and the area ratio of the inorganic film was 16%.

[Embodiment 8]

In the same manner as in Example 6, except that the etching of the ICO film was performed for 90 seconds, a substantially square including ICO was arranged at equal intervals in the two-dimensional direction orthogonal to each other. A support substrate of an inorganic film with an inorganic film.

The area ratio of the inorganic film to the support substrate was measured in the same manner as in Example 2. As a result, the area of the island portion was 100 μm ² (the side length was 10 μm), and the area ratio of the inorganic film was 11%.

[Embodiment 9]

In the same manner as in Example 6, an inorganic film containing a substantially square inorganic film containing ICO was formed at equal intervals in the two-dimensional direction orthogonal to each other except that the etching of the ICO film was 120 seconds. Support substrate.

The area ratio of the inorganic film to the support substrate was measured in the same manner as in Example 2. As a result, the area of the island portion was 9 μm ² (the side length was 3 μm), and the area ratio of the inorganic film was 1%.

[assessment]

With respect to the support substrates with the inorganic films of Examples 2 to 9, the same glass substrates as in Example 1 were used as the glass substrates, and the buildup and generation of bubbles were evaluated.

<Laminarity>

First, after the prepared support substrate and the glass substrate with the inorganic film are sufficiently washed, the inorganic film forming surface is abutted and the two are laminated to form a glass laminate. Moreover, the peeling property of the glass laminate was also confirmed.

In the glass laminate, the support substrate with the inorganic film is in close contact with the glass substrate, and no bubbles are generated inside, and the buildup property is evaluated as "○"; the support substrate with the inorganic film and the glass substrate are insufficient. The case where the ground is tightly bonded and/or the case where bubbles are generated between the inorganic film and the glass substrate is evaluated as "X".

<Bubble generation>

Then, the glass laminate was cut into 100 × 200 mm, washed again, and heat-treated at 600 ° C for 1 hour.

After the heat treatment, the glass laminate was confirmed, and the occurrence of bubbles in the inside of the glass laminate was evaluated as "○"; the bubble was confirmed inside the glass laminate as the occurrence of bubbles. 『×』.

The results are shown in the following table.

In the above table, the ratio of the "type" column of the "inorganic film" is the amount of indium oxide and antimony oxide in the target of the sputtering of the inorganic film (% by mass).

The thickness of the inorganic film is all 30nm

Further, in Examples 2, 3 and 6, the peeling property of the support substrate with the inorganic film and the glass substrate after the heat treatment was also very good. Further, in Examples 4 and 7, the peeling property of the support substrate with the inorganic film and the glass substrate after the heat treatment was also good.

[Embodiment 10]

As a support substrate, a glass substrate (AN100 manufactured by Asahi Glass Co., Ltd.) containing an alkali-free borosilicate glass of 300 × 300 mm and a thickness of 0.5 mm was prepared.

A cellulose solution was applied to the entire surface of the support substrate by screen printing to form a square lattice pattern having a line width of 17 μm and a line width (center spacing) of 100 μm. Further, the pattern was dried by an oven to form a square lattice-shaped mask.

By using sputtering of a target of 20% by mass of indium oxide (In ₂ O ₃ ) and 20% by mass of cerium oxide (CeO ₂ ), the inorganic film 14 is formed on the surface of the support substrate by a film of 20 nm through a mask. ICO.

Then, the mask is removed (peeled) by the use of pure water, brush removal, and ultrasonic cleaning, and the thickness is 20 nm and the side length is 83 μm at equal intervals of 17 μm in the orthogonal two-dimensional direction. The inorganic substrate supporting substrate of the square inorganic film (the area of the island portion was 6889 μm ² , and the area ratio of the inorganic film was 69%).

[Example 11]

A support substrate with an inorganic film was produced in the same manner as in Example 10 except that the square lattice-shaped mask pattern was set to have a line width of 10 μm and a line width of 50 μm.

Therefore, in this example, an inorganic film-attached supporting substrate having a square inorganic film having a side length of 40 μm is arranged at equal intervals of 10 μm in an orthogonal two-dimensional direction (the area of the island portion is 1600 μm ² , and the area ratio of the inorganic film is 64%).

[Embodiment 12]

A support substrate with an inorganic film was produced in the same manner as in Example 10 except that the square lattice-shaped mask pattern was set to have a line width of 10 μm and a line width of 30 μm.

Therefore, this example is an inorganic film-attached supporting substrate in which a square inorganic film having a side length of 20 μm is arranged at equal intervals of 10 μm in an orthogonal two-dimensional direction (the area of the island portion is 400 μm ² , and the area ratio of the inorganic film is 44%).

[Example 13]

A support substrate with an inorganic film was produced in the same manner as in Example 10 except that the square lattice-shaped mask pattern was set to have a line width of 15 μm and a line width of 100 μm.

Therefore, this example is an inorganic film-attached supporting substrate in which a square inorganic film having a side length of 85 μm is arranged at equal intervals of 15 μm in an orthogonal two-dimensional direction (the area of the island portion is 7225 μm ² , and the area ratio of the inorganic film is 72%).

[Embodiment 14]

The thickness of the inorganic film containing ICO was set to 30 nm, and the mask pattern of the square lattice shape was set to have a line width of 36 μm and a line width of 100 μm, and the same as in the tenth embodiment. A support substrate with an inorganic film is produced.

Therefore, in this example, an inorganic film-attached supporting substrate having a square inorganic film having a side length of 64 μm is arranged at equal intervals of 36 μm in an orthogonal two-dimensional direction (the area of the island portion is 4096 μm ² , and the area ratio of the inorganic film is 41%).

[Example 15]

The support of the inorganic film was produced in the same manner as in Example 10 except that the thickness of the inorganic film containing the ICO was 30 nm, and the mask pattern of the square lattice was set to have a line width of 44 μm and a line width of 100 μm. Substrate.

Therefore, in this example, an inorganic film-attached supporting substrate having a square inorganic film having a side length of 56 μm is arranged at equal intervals of 44 μm in an orthogonal two-dimensional direction (the area of the island portion is 3136 μm ² , and the area ratio of the inorganic film is 31%).

[assessment]

With respect to the support substrates with the inorganic films of Examples 10 to 15, the same glass substrates as those of Example 1 were used as the glass substrates, and the buildup and the generation of bubbles were evaluated in the same manner as in Examples 2 to 9.

The results are shown in the following table.

The targets of the sputtering are all [In:Ce=80:20] (refer to Table 1)

Further, in any of the examples, the peeling property of the support substrate with the inorganic film and the glass substrate after the heat treatment was very good.

[Comparative Example 1]

As the supporting substrate, the same glass substrate as in Example 1 was prepared.

Using the same target material as in Example 2, a 20 nm ICO film was formed on the entire surface of the support substrate to prepare a support substrate with an inorganic film.

A glass substrate similar to that of Example 1 was prepared as a glass substrate.

After the support substrate and the glass substrate with the inorganic film are sufficiently washed, the inorganic film surface is abutted and the two are laminated to form a glass laminate. In the glass laminate, the support substrate with the inorganic film was in good contact with the glass substrate, and no bubbles were generated.

Further, the glass laminate was cut into 100 × 200 mm, washed again, and heat-treated at 600 ° C for 1 hour. After the heat treatment, the glass laminate was confirmed, and as a result, a plurality of bubbles were generated inside.

Based on the above results, the effects of the present invention become clear.

The present invention has been described in detail with reference to the specific embodiments thereof. It is understood that various changes and modifications may be made without departing from the spirit and scope of the invention.

In addition, the present application is based on a Japanese patent application filed on August 1, 2014 (Japanese Patent Application No. 2014-158117), the entire disclosure of which is incorporated by reference.

[Industrial availability]

It can be preferably used in the manufacture of various electronic devices and the like.

10‧‧‧Support substrate with inorganic film

12‧‧‧Support substrate

14‧‧‧Inorganic film

16‧‧‧ glass substrate

20‧‧‧Glass laminate

24‧‧‧Inorganic film

24a‧‧‧ convex

24b‧‧‧ recess

30‧‧‧Support substrate with inorganic film

D‧‧‧ interval

T‧‧‧thickness

Claims (17)

A support substrate with an inorganic film, comprising: a support substrate; and an inorganic film formed on the support substrate, wherein the inorganic film includes a plurality of island portions dispersed on the support substrate, and the inorganic film is not formed The exposed portion of the support substrate is connected to the outside in the surface direction of the support substrate. The support substrate of the inorganic film according to claim 1, wherein the height of the island portion is 40 nm or less. The support substrate with an inorganic film according to claim 1 or 2, wherein the island portion is formed at a position where the interval between the ends is 20 μm or less. The support substrate with an inorganic film according to any one of claims 1 to 3, wherein an area of each of the island portions is 0.1 to 10000 μm ² . The support substrate with an inorganic film according to any one of claims 1 to 4, wherein a total area of the plurality of island portions is 11 to 80% with respect to an area ratio of a surface of the support substrate. A support substrate with an inorganic film, comprising: a support substrate; and an inorganic film formed on the support substrate, wherein the inorganic film has irregularities including a plurality of convex portions and concave portions, and the plurality of convex portions include In the thick portion, the concave portion includes a thin portion, and the concave portion is connected to the outside in a direction of a surface of the support substrate. The support substrate with an inorganic film according to claim 6, wherein a difference in height between the irregularities is 40 nm or less. The support substrate with an inorganic film according to claim 6 or 7, wherein the convex portion is formed at a position where the interval between the end portions is within 20 μm to form other convex portions. Attachment of an inorganic film support substrate according to any one of items 6 to 8, such as a request, wherein the area of each of those portions of the projections is 0.1 ~ 10000μm ^2. The support substrate with an inorganic film according to any one of claims 6 to 9, wherein a total area of the plurality of convex portions is 11 to 80% with respect to an area ratio of the support substrate. A glass laminate obtained by laminating a glass substrate on an inorganic film of a support substrate with an inorganic film according to any one of claims 1 to 10. A method for producing a support substrate with an inorganic film, comprising: forming a film containing an inorganic substance on a surface of the support substrate, and etching the film containing the inorganic material to form a plurality of islands dispersed on the support substrate The inorganic film of the part. A method for producing a support substrate with an inorganic film, comprising: forming a film containing an inorganic material on a surface of the support substrate, and etching the film containing the inorganic material to form a plurality of convex portions in the film containing the inorganic material; And the concavities and convexities of the recesses, the plurality of convex portions including a thicker portion, the concave portion including a thinner portion. A method for producing a support substrate with an inorganic film, characterized in that a resin film in which a plurality of non-formed portions are dispersed is formed on a surface of a support substrate, and an inorganic film is formed on the support substrate by using the resin film as a mask. The above resin film is then removed. The method for producing a support substrate with an inorganic film according to claim 14, wherein the base inorganic film is formed on the surface of the support substrate before the film formation of the resin film. A method for producing a glass laminate, which comprises forming a support substrate with an inorganic film by the production method according to any one of claims 12 to 15, and then laminating the glass substrate on the inorganic film. A method of manufacturing an electronic device characterized by using the method for producing a glass laminate according to claim 16.