TW201608606A - Thermal treatment device, thermal treatment method and recording medium - Google Patents

Abstract

This invention provides a thermal treatment device etc. capable of evenly and quickly heating a substrate that warps in a temperature rising process. In a thermal treatment device 1, a heating plate 2 which is adjusted to a heating temperatures is loaded with a substrate W that warps in a temperature rising process and then recovers to flat, and a supporting member 3 that supports the substrate W from the underside is moved up and down between a receiving position on the upper side and another position on the lower side of the heating plate 2 by lifting systems 31, 32. A control section 4 raises the temperature of the substrate W on the upper side of the heating plate 2 till the temperature at which the substrate warps by heat from the heating plate 2 while the substrate W is moved down from the receiving place and then, after the lapse of a recovery period till the substrate W recovers to flat, puts the substrate W onto the heating plate 2.

Description

Heat treatment device, heat treatment method and recording medium

The present invention relates to substrate heating techniques.

In the component program using photo lithography, a heat treatment apparatus for heating a substrate on which a photoresist is applied or a substrate after exposure is used. In the heat treatment apparatus, there is also a device for heating the substrate by placing the substrate on a heating plate adjusted to a heating temperature.

On the other hand, there are many types of substrates used for component manufacturing, and some heat treatments are used for substrate materials having a small heat transfer coefficient (for example, about 160 W/(m·° C)) which is generally used for semiconductor devices. Lithium acid (LiTaO ₃ ): about 4.6 to 8.8 W/(m·°C), gallium arsenide (GaAs): about 55 W/(m·°C), lithium niobate (LiNbO ₃ ): about 38 W/(m·°C The substrate thus formed is subjected to heat treatment.

However, when the substrate is placed on a heating plate for heating, it is difficult to uniformly and uniformly heat the substrate having a small heat transfer coefficient. Therefore, temperature unevenness occurs in the surface of the substrate, and the substrate is deformed due to the difference in the expansion ratio of the temperature, thereby causing warpage, making uniform heating more difficult. Moreover, if the substrate is deformed on the heating plate, the substrate is in contact with the heating plate, which is also the main cause of cracking. In particular, as the substrate is enlarged or thinned, the problem of warpage when the substrate is heated is becoming more and more serious. Further, as described in Patent Document 1, some of the above-mentioned substrates have a crystal structure having different thermal expansion rates depending on the orientation. When such a substrate is subjected to thermal changes, there is also a concern that the substrate is broken due to the influence of stress and strain generated inside the substrate.

Here, Patent Document 2 describes a substrate heat treatment apparatus in which a SOG (Spin On Glass) film formed by applying a coating liquid for forming a ruthenium-based coating film on a rotating semiconductor wafer is more dense. The lifting pins of the supporting substrate are sequentially lowered to change the height from the top surface of the heating plate, and the heat treatment temperature of the substrate is increased in stages. However, in Patent Document 1, a technique for suppressing the influence of warpage to perform uniform heating when heated on a hot plate is not described. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Laid-Open Patent Publication No. 2008-301066: Paragraph 0004 [Patent Document 2] Japanese Patent Laid-Open No. Hei 11-97324: Paragraph 0025 to 0026, Fig. 1

[The problem that the invention wants to solve]

In view of the above, an object of the present invention is to provide a heat treatment apparatus, a heat treatment method, and a recording medium recording the same, which can uniformly and rapidly heat a substrate which is warped during a temperature rise process. [Method of solving the problem]

The heat treatment apparatus of the present invention is for heating a substrate, comprising: a heating plate, which mounts a substrate which is warped during heating and which returns to a flat state after being heated, and is adjusted to a heating temperature for heating the substrate; The member is configured to freely protrude/drop in the heating plate and support the substrate from the bottom surface side; the lifting mechanism is disposed on the upper side of the heating plate, and transmits the transfer position of the substrate to the supporting member and the heating plate The support member is raised and lowered between the lower side positions; and the control unit warms the substrate to the upper side of the heating plate to cause warpage due to heat from the heating plate while the substrate is lowered from the transfer position. The temperature of the koji, and then the lifting mechanism is actuated to cause the substrate to be placed on the heating plate after the recovery time of the substrate is restored to a flat state to perform position control of the supporting member.

The heat treatment apparatus may have the following configuration. (a) the control unit controls the elevating mechanism to stop the lowering of the substrate at a temperature higher than the temperature at which the warpage is generated, and to cause the support member to be warped, thereby causing warpage of the substrate to be processed. After the reply time elapses, the support member is lowered again. The first height position is set such that the distance from the heating plate is greater than the position at which the maximum displacement of the substrate in the height direction of the warpage occurs. Further, the control unit controls the elevating mechanism to stop the lowering of the support member at a second height position higher than the first height position, and to preheat the substrate to be processed, and then re-schedule The support member is lowered. (b) The control unit estimates the timing at which the response time of the substrate to be processed passes based on the correspondence between the warpage temperature and the recovery time of the substrate obtained in advance for each substrate type. Further, the control unit estimates the temperature of the substrate to be processed based on the relationship between the distance from the heating plate to the substrate adjusted to the heating temperature and the temporal change of the temperature of the substrate, which is obtained in advance for each substrate type, for use in Position control when the support member is lowered. (c) the control unit determines a position and timing for raising and lowering the support member according to a heating sequence, the heating sequence being set to: after the substrate is transferred to the support member at the transfer position, the substrate is placed on the heating plate The time integral value of the substrate temperature during the period from the mounting surface to the time when the substrate is raised from the mounting surface is a value set in advance. The time integral value of the substrate temperature is determined based on the relationship between the distance from the heating plate and the substrate obtained from the substrate type in advance and the average temperature increase rate of the substrate. (d) The substrate is composed of a substrate material selected from the group consisting of lithium niobate, gallium arsenide, and lithium niobate. Alternatively, the substrate is made of a substrate material having a thermal conductivity of 55 W/(m·° C. or less). [Effect of the invention]

In the present invention, the substrate supported on the supporting member is heated on the upper side of the heating plate, and after the temperature is raised to a temperature at which the substrate is warped, the substrate is placed after the recovery time of the warped substrate returns to a flat state. By heating the plate, uniform and rapid heating can be performed on the flat substrate.

In the embodiment of the present invention, a case where a lithium niobate thin plate (hereinafter referred to as "substrate W") is treated will be described as an example. 1 and 2 show the configuration of a heat treatment module (heat treatment apparatus) 1 for heating a substrate W. For example, the heat treatment module 1 is a coating and developing device that is formed by applying a photoresist to the substrate W to form a photoresist film, and developing the exposed photoresist film.

As shown in the exploded perspective view of Fig. 1, the heat treatment module 1 of the present embodiment is provided on the top surface of the base portion 11, and includes a heating plate 2 on which a substrate W to be processed is placed, and a support pin 3 for supporting the substrate. W is placed on this heating plate 2. The heating plate 2 has a structure in which the resistance heating element 21 is embedded in a disk-shaped hot plate made of ceramic such as SiC or AlN, and the resistance heating element 21 is connected to the power supply portion 23 (FIG. 2). Further, on the top surface of the heating plate 2, a plurality of gap pins 22 are provided from the back surface supporting substrate W at a height position of 0.2 mm above the top surface.

The gap pin 22 is made of a cylindrical member made of ceramics having a diameter of 3 mm, and is provided at one center position of the substrate W, and is provided at three positions spaced apart from each other along the circumferential direction of the heating plate 2 around the center position. The top surface of the gap pin 22 is placed on the mounting surface of the substrate W corresponding to the heating plate 2, and a substrate W having a diameter of 200 mm is placed.

The support pin 3 has a structure in which a ceramic wafer such as SiC is provided on the upper portion of a rod-shaped member made of metal such as stainless steel, and the entire structure is a rod-shaped member having a diameter of 1 mm. In the heat treatment module 1 of the present embodiment, three support pins (support members) 3 are arranged at intervals in the circumferential direction of the heating plate 2, and each of the support pins 3 is provided to penetrate the heating plate 2 in the vertical direction. On the heating plate 2, a through hole 25 having a diameter of 3 mm for penetrating the support pins 3 is provided.

As shown in FIG. 2, the lower end portions of the support pins 3 are connected to a common elevating member 31 which is connected to the elevating motor 32 provided on the side of the base portion 11. The elevating member 31 is lifted and lowered by the elevating motor 32 so that the heights of the upper ends of the three supporting pins 3 are aligned, and the supporting pins 3 are extended from the top surface of the heating plate 2 to be retracted. The substrate W is supported from the back side by the front end portions of the support pins 3. The lift motor 32 is stored in the casing 17 disposed on the side of the base portion 11.

When the elevating member 31 is moved up and down, the front end portion of the support pin 3 moves between the transfer position on the upper side of the heater board 2 and the lower side of the heater board 2, and the transfer position is attached to the external substrate transport mechanism ( For example, between the coating of the heat treatment module 1 and the substrate transport mechanism of the developing device, transfer of the substrate W is performed. In this example, the transfer position is set, for example, at a position on the upper side of 16.5 mm from the top surface of the heater board 2.

Further, the lift motor 32 can stop the front end portion of the support pin 3 at any position between the transfer position and the position on the lower side of the heater board 2. As a result, the support pin 3 of the support substrate W can freely adjust the distance from the top surface of the heater board 2 to the substrate W. The elevating member 31 or the elevating motor 32 corresponds to an elevating mechanism of the support pin 3.

Here, when the gap pin 22, the support pin 3, or the through hole 25 are provided in the heating plate 2, the top surface structure of the heating plate 2 becomes uneven, and it becomes a main factor which hinders uniform heating in the surface of the board|substrate W. In this regard, in this example, the gap pin 22, the support pin 3, or the through hole 25 are made smaller (the gap pin 22 is 3 mm in diameter; the support pin 3 is 1 mm in diameter; the through hole 25 is 3 mm in diameter), and The decrease in in-plane uniformity when the substrate W is heated is suppressed.

Further, as shown in FIG. 1, a plurality of disk-shaped substrate guides 24 for preventing the positional displacement of the substrate W are circumferentially arranged in the circumferential direction of the substrate W around the mounting surface of the substrate W in the top surface of the heating plate 2. . In addition, in the drawings other than FIG. 1 and FIG. 2, the description of the substrate guide 24 is omitted.

Around the heating plate 2, a cylindrical wall portion 12 that surrounds the heating space of the substrate W from the side is provided. As shown in Fig. 1, the cylindrical wall portion 12 is formed of a flat cylindrical member made of metal, and is disposed so as to be able to surround the substrate W supported by the support pin 3 from the side or placed on the heating plate. 2 on the substrate W.

As shown in FIG. 2, the lower end portion of the cylindrical wall portion 12 is connected to the elevating member 121, and the elevating member 121 is connected to the elevating motor 122 disposed on the side of the base portion 11. In this manner, the elevating member 121 is moved up and down by the elevating motor 122, and the cylindrical wall portion 12 is positioned on the lower side of the base portion 11 via the annular opening portion 111 (refer to FIG. 1) provided on the top surface of the base portion 11. The position between the support pin 3 or the substrate W on the heater board 2 is raised and lowered (refer to FIGS. 11 to 14).

Moreover, in this example, as described above, the elevation motor 32 that raises and lowers the support pin 3 or the elevation motor 122 that raises and lowers the tubular wall portion 12 is housed in the common casing 17 (FIG. 1), but for the sake of explanation. In FIG. 2, the lift motor 32 or the lift motor 122 is described in a separate position.

When the tubular wall portion 12 is raised, the upper end portion of the cylindrical wall portion 12 reaches the upper side of the transfer position of the support pin 3, and becomes the transfer position of the substrate W supported by the support pin 3 and the heating plate. The state in which the moving area transported between the mounting surfaces of 2 is entirely enclosed.

Further, as shown in FIG. 1 and FIG. 2, a cover portion that can block the opening on the top surface side of the cylindrical wall portion 12 is provided on the upper side of the tubular wall portion 12 that rises to the position where the substrate W is moved. 13. The lid portion 13 is formed of a disk-shaped member made of metal, and a row for discharging the gas in the processing space surrounded by the cylindrical wall portion 12, the lid portion 13, and the base portion 11 is connected to the top surface thereof. Trachea 16. The end portion of the exhaust pipe 16 is connected to an exhaust mechanism (not shown), and the substrate W can be heated while performing the exhaust in the processing space.

As shown in FIG. 1, the lid portion 13 has two end portions 15 which are arranged to extend in the longitudinal direction of the base portion 11, and hold the center portion and the opposite end portions. Each of the diaphragm portions 15 is supported by two pillar portions 14 which are arranged to extend upward from the top surface of the base portion 11 , whereby the lid portion 13 has the bottom surface thereof and the heating plate 2 The opposite state is disposed on the upper side of the heating plate 2. In addition, in the drawings other than FIG. 1, the description of the exhaust pipe 16, the diaphragm portion 15, or the pillar portion 14 is omitted.

The base portion 11, the casing 17, the cylindrical wall portion 12, or the lid portion 13 having the above-described configuration are stored in a casing (not shown), and a photoresist coating module or a developing device such as a coating and developing device The setting area of the module is adjacently configured.

Furthermore, as shown in FIG. 2, the heat treatment module 1 is connected to the control unit 4. The control unit 4 is composed of a computer including a CPU 41 and a memory (memory unit) 42. The memory 42 is recorded and attached to the heat treatment module 1 (that is, transported to the heat treatment module 1 and transferred to the memory module 1 After the substrate W supporting the pin 3 is placed on the heating plate 2 and heated, the support pin 3 is lifted again and transported to the transfer position, and the processed substrate W is carried out (control) related steps (command) group Program. The program is stored on a hard disk, a CD, a magneto-optical disk, a memory card, and the like, and is installed from the media to the computer.

For example, the control unit of the heat treatment module 1 can be shared with a control computer for controlling the coating and developing device for loading the heat treatment module 1. Further, as shown in FIG. 2, the heat treatment module 1 is provided with a face portion 5 formed by a touch panel type display or the like, and the interface portion 5 can receive input from substrate information or processing conditions described later by the operator, Or an "error" notification.

Further, the heat treatment module 1 of the present example has a function of suppressing uneven heating due to warpage caused by the temperature rise of the substrate W, and enables the substrate W to be uniformly heated uniformly. Hereinafter, the details of the above functions will be described with reference to Figs. 2 to 8 .

The inventors of the present invention have examined various changes in the heating temperature, the thickness of the substrate W, and the like in view of the warpage phenomenon generated when the substrate W is heated. As a result, the following new findings were obtained: (1) The heating temperature is divided into a heating temperature at which the substrate W is warped and a heating temperature at which warpage does not occur, and (2) even when the substrate W is heated at a heating temperature at which warpage is generated. , warp will disappear as time passes, and return to the flat substrate W. Moreover, in FIGS. 3 and 4 which will be described below, a lithium niobate thin plate is used as an evaluation substrate.

The results of the preliminary experiments of Figs. 3(a) to (c) and Figs. 4(a) to (c) show the evaluation of the top surface of the substrate after the evaluation substrate is placed on the heating plate 2 set to a predetermined heating temperature. Detect changes in height over time. Fig. 3 (a) to (c) show the results of various changes in the temperature of the heating plate 2, and heating of the evaluation substrate having a thickness of 200 μm without applying a photoresist film or the like; Fig. 4 (a) to (c) are The result of heating the evaluation substrate having a thickness of 400 μm was also shown. The height position is measured by a laser displacement meter, and is set to a height at which the detection position is set to a position close to the center of the top surface side of the evaluation substrate by only 2 mm toward the center. The horizontal axis of each graph represents the elapsed time (seconds); the vertical axis represents the detected height (mm).

According to the experimental results of the evaluation substrate having a thickness of 200 μm as shown in Figs. 3(a) to (c), when the set temperature of the heating plate 2 was 50 ° C, almost no warpage of the evaluation substrate was detected (Fig. 3 (a) ). On the other hand, if the set temperature of the hot plate 2 is raised to 60 ° C, warpage of up to about 1.0 mm is generated as shown in Fig. 3 (b). When the heating was continued in this state, the warpage gradually became small, and after about 10 seconds from the detection of the warpage, the evaluation substrate was returned to a substantially flat state.

Further, as shown in FIG. 3(c), when the set temperature of the hot plate 2 is set to 110 ° C, the maximum value of warpage (about 1.7 mm) and the evaluation substrate are from the start of warpage to the return to flatness. The time (about 40 seconds) is larger than when the set temperature is 60 °C.

It can be seen from the above that even in the case of the evaluation substrate having the same thickness, if the set temperature of the heating plate 2 is different, there is a case where warpage occurs and no warpage occurs (hereinafter, the temperature at which warpage occurs is referred to as "warpage start". Further, even in the case where warpage occurs, the maximum warpage value (hereinafter referred to as "warpage amount") or the time from the start of warpage to the flatness of recovery (hereinafter referred to as "recovery time") is different.

Next, when the thickness of the evaluation substrate was set to 400 μm, even if the set temperature of the hot plate 2 was set to 80 ° C, warpage was hardly detected ( FIG. 4( a )). On the other hand, when the set temperature of the hot plate 2 is raised to 90 ° C, as shown in FIG. 4( b ), since the warpage of the evaluation substrate is detected, it is known that the heating plate 2 is changed every 10 ° C. The warpage start temperature at the time of setting the temperature (hereinafter, the same in the present embodiment) was 90 °C. Further, the amount of warpage at this time was about 0.7 mm, and the recovery time was about 30 seconds. Further, when the set temperature of the hot plate 2 was 110 ° C, the amount of warpage was about 0.9 mm as shown in Fig. 4 (c), and the recovery time was about 46 seconds.

Thus, it can be confirmed that if the thickness of the substrate (the type of the substrate W) is different, the warpage starting temperature also changes. It is also known that even if the set temperatures of the heater boards 2 are the same, if the thickness of the substrate W is different, the amount of warpage or the recovery time value is different.

As confirmed above, the warped substrate W is returned to be flat after the recovery time. Therefore, if the substrate W is warped in advance, and after being placed on the heating plate 2 after the recovery time, the flat substrate W can be uniformly heated.

In this regard, the substrate W supported by the support pin 3 on the upper side of the heating plate 2 receives the radiant heat from the heating plate 2 and the like, and the temperature rises. Therefore, the heat treatment module 1 of the present embodiment can adjust the height position of the substrate W by appropriately adjusting the support pin 3, and can warp the substrate W while supporting the support pin 3. Further, since the substrate W is placed on the heating plate 2 after the recovery time has elapsed, the substrate W that has returned to the flat surface can be heated on the heating plate 2.

As for these functions, as shown in FIG. 2, the heat treatment module 1 previously takes the type of the substrate W (for example, the thickness of the coating film or the coating film such as the photoresist film, the thickness of the coating film, or the substrate material) as a parameter, and The information on the warpage amount or the recovery time of the set temperature of the panel 2 (when the substrate W is placed on the heater board 2, which can be regarded as the heating temperature of the substrate W after a sufficient period of time) is recorded as the warpage data 431. .

As shown in FIGS. 5(a) and 5(b), the warpage data 431 records a table as a warpage amount and a recovery time corresponding to the heating temperature of the substrate W (FIG. 5 shows warpage data regarding the above evaluation substrate). 431). According to the example shown in FIG. 5, from the order of the heating temperature of the substrate W being low and high, the temperature at which the amount of warpage starts to be 0 is equivalent to the warpage starting temperature of the substrate W. Moreover, the recovery time set by the warpage data 431 can be set to be looser than the actual measurement time (refer to FIG. 3(b), (c), FIG. 4(b), (c)). Value (for example, the measurement result plus 10% value, or the response time plus 5 seconds value, etc.).

Furthermore, as shown in FIG. 2, in the memory 43 of the heat treatment module 1, it is recorded that when the substrate W is supported at a height position of the support pin 3, various changes occur from the top surface of the heating plate 2 to the substrate W. The distance from the bottom surface (hereinafter referred to as "gap height") is a change in temperature of the substrate W based on room temperature (23 ° C) (temperature rise characteristic data 432).

These temperature rise characteristic data 432 records the type of the substrate W of the complex array and the set temperature of the heater board 2 as parameters. Fig. 6 is a temperature rise characteristic curve 432 of the substrate W having a thickness of 200 μm when the set temperature of the heating plate 2 is set to 110 ° C, and the temperature rise curve is drawn according to the height of each gap (the gap height is made on a scale of 1.0 mm, Part of it is shown in 6.) The slope (temperature rising rate) of the temperature rise curve in the temperature rise period of the substrate W becomes smaller as the gap height becomes larger. That is, the greater the gap height, the longer the time required for the substrate W to heat.

Further, the substrate W supported by the support pin 3 has a lower reaching temperature when the gap height is larger. Therefore, even if the substrate W is disposed at a gap height position where the reaching temperature is lower than the warpage starting temperature, the substrate W does not warp. Therefore, if the substrate W is placed on the hot plate 2 thereafter, warpage occurs in the hot plate 2.

The heat treatment module 1 of the present embodiment is made based on the warpage data 431 and the temperature rise characteristic data 432, and is warped before the substrate W is placed on the hot plate 2, and is made to satisfy the elapsed time. Supports the order in which the substrates W supporting the pins 3 are sequentially lowered and simultaneously heated. Hereinafter, a method of producing the heating sequence will be described. Moreover, in the following description, the raising and lowering operation of the substrate W supported by the support pin 3 is set to be sufficiently faster than the temperature increase rate of the substrate W.

As described above, in the heat treatment module 1 of the present example, the substrate W supported at the transfer position is lowered to a certain gap height position at the transfer position, and warpage occurs. However, even if the substrate W is placed on the heating plate 2 in such a manner that the heating is started at a position higher than the heating plate 2, the substrate W may be broken or the like due to a sudden temperature change. .

Therefore, the heat treatment module 1 of the present embodiment preheats the substrate W at a position (second height position) that is higher than the position before moving the substrate W to the gap height position (first height position) at which the warpage is generated. In this preheating, the substrate W may be warped or warped.

In this manner, the heat treatment module 1 performs heating of the substrate W at the following three gap height positions: a stage of preheating (hereinafter referred to as "first stage"); and a stage in which the substrate W is warped (hereinafter referred to as "second stage" And the substrate W is placed on the heating plate 2 (hereinafter referred to as "the third stage"). The preheating temperature in this example is set to 60 °C. The heating stage number data 422 (three stages) and the preheating temperature data 421 (60 ° C) are recorded in advance in the memory 42 of the control unit 4 (Fig. 2).

Fig. 7 is a view showing an example of the temporal change of the temperature of the substrate W in the heating sequence in which the substrate W having a thickness of 200 μm is placed on the hot plate 2 set to 110 °C. In the example shown in FIG. 7, at the transfer position (gap height of 16.5 mm), the substrate W that has been transferred to the room temperature of the support pin 3 is transported to the predetermined gap height position in the first stage and raised to the preheating temperature ( 60 ° C, according to Figure 5 (a) is also the warpage start temperature). Thereafter, it is transported to the gap height position on the lower side, and is heated to a temperature (80 ° C) higher than the warpage start temperature in the second stage. In the second stage, after waiting for the recovery time of the warped substrate W to elapse, in the third stage, the substrate W is placed on the hot plate 2 and heated to 110 °C.

On the other hand, referring to the temperature rise curve shown in FIG. 6, it is understood that the temperature at which the substrate W reaches the preheating temperature (60 ° C) or the temperature at which the warpage occurs (the temperature at which the warpage start temperature (60 ° C) or higher) is exceeded. There are a large number of combinations of height positions. Therefore, the position at which the preheating is performed, the position at which the substrate W is warped, and the heating time of each of the substrates W on the heater board 2 (heating times A, B, and C (seconds) shown in FIG. 7) may be used. Get various values. Therefore, the heat treatment module 1 of this example determines the gap height position or the heating time in each stage based on the following guidelines.

Fig. 8 shows the temporal change of the temperature of the substrate W in the conventional method in which the substrate W is immediately transferred to the heating plate 2 and heated, after the substrate W is transferred to the support pin 3. According to the conventional method, the substrate W is conveyed at room temperature and is rapidly heated to the temperature of the hot plate 2 (T3 = 110 ° C). In this state, heating is continued only for a predetermined period of time.

Compared with the change of the temperature of the substrate W in the conventional method, the temperature change of the substrate W shown in FIG. 7 is different in that the temperature of the substrate W gradually rises as the position of the gap height changes. As described above, although the temperature change of the substrate W is different from the conventional method, the processing result of the substrate W (for example, in the case of the baking treatment of the photoresist film, the residual amount of the solvent in the photoresist film, etc.) must be substantially the same as each other. the same.

In view of this, the inventors of the present invention have learned that the time integral value of the substrate W temperature during the application of the oblique line in FIG. 8 (hereinafter referred to as "heat history") and the period A to C shown in FIG. 7 (the first stage - In the third stage), the heat history is the same, and the processing results of the substrate W in the two heating methods are substantially the same.

Therefore, as shown in FIG. 2, in the heat history setting data 433 of the heat treatment module 1 of the present embodiment, the heat history of the conventional method shown in FIG. 8 is recorded in advance as the heat history setting data for each type of the substrate W. 433. In this manner, the gap height position or the heating time in each stage can be determined to achieve a heat history in which the heat history setting data 433 corresponding to the selected substrate W type is substantially uniform.

The heat history of the first stage to the third stage can be obtained by linearly approximating the temperature increase rate in each stage as shown in FIG. In this example, the temperature rise rate of the linear approximation in the first stage and the second stage is determined in advance, and the memory 42 of the control unit 4 is recorded in advance as the temperature increase rate data 423 (FIG. 2). In this example, the temperature increase rate in the first stage was set to 0.5 ° C / sec; and the temperature increase rate in the second stage was set to 1.0 ° C / sec.

As described above, when the gap height position of the first stage is determined, the average slope of the temperature increase rate during heating of the substrate W from room temperature to 60 ° C (preheating temperature, T1 of FIG. 9) is selected from the temperature rising characteristic data 432. Near the 0.5°C/sec gap height position. Next, the time required to heat the substrate W from room temperature to 60 ° C at this temperature increase rate was defined as the heating time A. In the first stage, the heat history V1 of the substrate W heated from room temperature (23 ° C) to the preheating temperature (T1) is expressed by the following formula (1). V1=(T1-23)*A/2 ...(1)

Next, when determining the gap height position of the second stage, the substrate W preheated to 60 ° C is heated to a temperature higher than the warpage start temperature, and the heating time B is determined, so that the substrate W is placed after the recovery time elapses. On the heating plate 2.

That is, when the warpage start temperature is lower than the preheating temperature, the temperature of the second stage is 1.0 ° C / sec, and the temperature of the second stage is determined to be "in the first stage, the substrate W is reached. The time from the start of warpage to the point at which the preheating temperature is reached A' + the heating time of the second stage B ≧ recovery time".

Further, when the warpage start temperature is higher than the preheating temperature, the heating time required to raise the substrate W from the preheating temperature to the warpage start temperature is B1, and then the warpage start time is reached. When the heating time until the completion of the second stage is B2, the temperature of the second stage is determined to be 10 ° C / sec, and the temperature of the second stage is determined to be "B2 ≧ recovery time".

Here, as shown in FIGS. 5(a) and 5(b), the recovery time of the warped substrate W increases as the heating temperature of the substrate W becomes higher. However, as described with reference to FIGS. 3 and 4, the recovery time is a warpage caused by a sudden change in temperature when the substrate W at room temperature is placed on the heating plate 2 set to each heating temperature. The response time after the occurrence.

In this regard, in the heat treatment module 1 of the present example which is heated at the stage, the occurrence of warpage is more stable, and even if the temperature of the substrate W rises at each gap height position, the possibility that the recovery time greatly changes is small. Therefore, in this example, the heating time B of the second stage is determined based on the recovery time in the warpage start temperature. Moreover, it is of course possible to grasp the recovery time under the condition of temperature change in the temperature rise rate of the first stage or the second stage (0.5 ° C / sec, 1.0 ° C / sec) by the preliminary experiment, and record the reply time first. As warpage data 431. Further, as described above, since the recovery time described in the warpage data 431 can be left with a margin relative to the actual measurement result, the influence of the temperature change can be absorbed by the setting threshold of the margin.

When the heating temperature T2 of the second stage is determined by the above-described method, the average slope of the temperature increase rate in the period in which the substrate W is heated from the temperature T1 to the T2 is selected from the temperature increase characteristic data 432. The clearance height position of °C/sec. Next, the time required to heat the substrate W from the temperature T1 to T2 at this temperature increase rate is referred to as the heating time B. In the second stage, the heat history V2 of the substrate W heated from the preheating temperature (T1) to the temperature T2 is expressed by the following formula (2). V2=(T2-T1)*B/2+(T1-23)*B ...(2)

Thereafter, the substrate W heated to the temperature T2 is placed on the heating plate 2 (third stage). At this time, the time required for raising the substrate W from the temperature T2 to the heating temperature T3 in the hot plate 2 is set to a second. In the third stage, the heat history V3 of the substrate W from the heating plate 2 to the end of heating is expressed by the following formula (3). V3=(T3-23)*C-(T3-T2)*a/2 (3)

In order to make the heat history of the substrate W shown in FIG. 9 the same as the conventional heat history shown in FIG. 8, the V of the heat history setting data 433 can be made to match the sum of the heat history V1 to V3 of the first to third stages. (Note (4) below). V=V1+V2+V3 ...(4)

Therefore, in this example, the heating time B of the second stage and the heating time C of the third stage are determined under the condition of the formula (4). For example, in terms of shortening the processing time, the heating time B (that is, the temperature T2) in the second stage is first determined so as to satisfy the limit of the recovery time and is the shortest (T1>the warpage start temperature). , "A'+B=Response time"; when T1≦ warps the start temperature, "B2=Response time"). Thereafter, the heating time C of the third stage is determined under the condition of satisfying the formula (4).

Here, as shown by the warpage data 431 having a thickness of 400 μm as shown in Fig. 5(b), the warpage start temperature is 90 ° C. However, if the temperature is raised at a temperature increase rate of 1.0 ° C / sec, the temperature cannot be ensured to be 30 seconds. The time to reply to the time. Further, it is also possible that the selected gap height position is smaller than the maximum displacement of the warpage amount of the substrate W.

As described above, when the heating sequence is in conflict with the restriction, an "error" report is issued from the face portion 5, and the change in the temperature increase rate in the second stage is received. In this case, the following setting can also be accepted: the number of heating stages is increased, and the temperature is raised to the preheating temperature (first stage), and the temperature increase rate is divided into two changes (second stage, third stage), after which The substrate W is placed on the heating plate 2 (fourth stage).

The method of determining the gap height position and the heating time at each stage described above is recorded in the memory 42 of the control unit 4 as the heating sequence setting program 424. Further, for the sake of explanation, the memory 42 for recording the preheating temperature data 421 and the like and the memory 43 for recording the warpage data 431 and the like are respectively shown in Fig. 2, but of course, the memories 42 and 43 may be common.

The operation of the heat treatment module 1 having the above configuration will be described with reference to Figs. 10 to 14 . First, the operation of the heating sequence for fabricating the substrate W will be described with reference to the flowchart of FIG.

For example, at the timing (starting) of starting the processing of the substrate W of the new batch, the substrate information is received from the operator via the interface 5 (the thickness of the substrate W, the presence or absence of the coating film, the thickness of the coating film, or the substrate material). The processing conditions (the set temperature of the heating plate 2 or the pressure condition in the processing space) are input (step S101).

At the set temperature of the input heating plate 2, when the substrate W is not warped (step S102; NO), the recipe preparation data is output to prepare the substrate W to be directly placed on the heating plate 2 for heating. The recipe (step S103), and then the production operation (end) of the heating sequence is ended.

When the substrate W is warped with the input set temperature (step S102; YES), the gap height position in each stage is selected from the temperature rising characteristic data 432 by using the method described with reference to FIGS. 7 to 9 ( In step S104), the heating time of each stage is determined, and the heat history of the heating sequence to be produced is matched with the input substrate information and the heat history setting data 433 in the processing conditions (step S105).

Next, it is determined that the created heating sequence satisfies the restriction that the recovery time or the gap height position is larger than the maximum displacement of the warpage amount (step S106). When the above limitation is not satisfied (step S106; NO), an "error" report is issued from the interface 5, and the operator receives the parameter such as the temperature increase rate data 423 (step S108), and repeats the production of the heating sequence (step S108). Steps S104, 105).

When one is made to satisfy the restriction heating sequence (step S106; YES), the gap height and the heating time of each stage are output as recipe preparation data (step S107), and the heating sequence production operation (end) is ended.

After the heating operation is performed by the above operation, the substrate W is transported to the heat treatment module 1 to be heated. First, the heat treatment module 1 stands by in a state where the heating plate 2 is heated up to the set temperature of the processing conditions set in advance. Next, for example, the coating liquid is applied by the coating module of the coating and developing device, or the developing solution is supplied by the developing module, and the developed substrate W is transported to the heat treatment module 1 by the substrate transfer mechanism. At this time, as shown in FIG. 11, the heat treatment module 1 lowers the cylindrical wall portion 12 into the base portion 11, and raises the support pin 3 to the transfer position, and then enters the substrate transfer mechanism into the heat treatment module 1. , receiving the substrate W.

Thereafter, the tubular wall portion 12 is raised, and while the inside of the processing space surrounded by the lid portion 13 and the cylindrical wall portion 12 is exhausted, the substrate W is lowered to the gap height position of the first stage, and Heat to preheat temperature (T1) (Figure 12). When the substrate W is heated to the preheating temperature, the substrate W is lowered to the gap height position of the second stage, and the temperature is raised to the previously set temperature (T2) (FIG. 13).

Thereafter, when the substrate W is heated to the temperature T2, the substrate W is placed on the heating plate 2, and heating is performed only for the time set in the heating sequence (Fig. 14). Thereafter, when the predetermined time elapses, the substrate W is raised to the transfer position, the exhaust in the processing space is stopped, and the cylindrical wall portion 12 is lowered to carry the substrate W out. Moreover, when it is necessary to cool the substrate W before carrying out, for example, the substrate W may be carried out after waiting for only a predetermined time at the transfer position.

In these operations, as shown in FIG. 15( a ), the substrate W that has been transferred to the support pin 3 in a flat state is warped in the course of temperature rise to the first stage and the second stage ( FIG. 15( b ). )), and then returned to a flat state and placed on the hot plate 2 to be heated (Fig. 15 (c)). Once the treatment is completed, the heat treatment module 1 raises the support pin 3 to the transfer position and lowers the cylindrical wall portion 12. Thereafter, the substrate W is transferred to the substrate transport mechanism that enters the heat treatment module and transported to the next processing module.

According to the heat treatment module 1 of the present embodiment, the following effects can be obtained. The substrate W supported by the support pin 3 is heated on the upper side of the heating plate 2, and after the temperature is raised to a temperature at which the substrate W is warped, after the recovery time of the warpage-producing substrate W returns to the flat state, the Since the substrate W is placed on the heating plate 2, uniform and rapid heating can be performed on the flat substrate W. Further, since the substrate W is placed on the heating plate 2 and heated after the warpage is removed, the processing time can be suppressed from increasing, and the processing can be performed quickly.

Here, the type of the substrate W to be heated by the heat treatment module 1 of the present embodiment is not limited to lithium niobate as a substrate material. The substrate W composed of the substrate material selected from the group consisting of gallium arsenide and lithium niobate containing lithium niobate can be suppressed by the stepwise temperature increase using the heat treatment module 1. Uniform heating is performed by the influence of warpage. When such a substrate material is used as a substrate material having a thermal conductivity of が55 W/(m·° C.) or less, warpage may occur due to heating, and thus a heat treatment mold by using the present example can be obtained. Group 1 was heated to obtain an effect of suppressing the influence of warpage.

Further, it is not necessary to exhaust the inside of the processing space in which the substrate W is heated, and it is also possible to perform heating in an atmospheric environment or an inert gas atmosphere. In addition, the processing space is not limited to the example in which the cylindrical wall portion 12 and the lid portion 13 shown in FIG. 1 are used. For example, the heating plate 2 may be provided in the casing in which the loading and unloading port of the substrate W is formed, and the shielding member may be used as the shielding member. The structure of the switch into the outlet is switched.

Further, the set temperature of the hot plate 2 is not limited to the temperature at which the substrate W is heated in advance and processed, and the temperature of the heater plate 2 may be changed in accordance with the decrease in the substrate W. For example, the temperature of the heating plate 2 may be gradually increased as the substrate W is lowered in the first to third stages.

Further, in the case of the warpage-producing substrate W, it is not limited to the case where the timing of the recovery time elapses is determined based on the relationship between the substrate W temperature and the recovery time which are known in advance. For example, the warpage of the substrate W supported by the support pin 3 can be immediately monitored by the laser displacement meter above the heating plate 2. For example, the occurrence of warpage of the substrate W can be determined by detecting the height position of the plurality of portions on the side of the center portion and the side of the peripheral portion of the substrate W, and then determining the difference between the positions.

In this case, the following method may be employed: the substrate W is slowly lowered from the transfer position, and after the warpage is generated, the timing of returning to the flatness is detected, and the descending speed of the substrate W is accelerated, and is placed on the heating plate 2 . In this way, it is effective in the type of substrate W in which the influence of the heat history on the processing result is small. As shown in this example, the substrate W supported by the support pin 3 can be heated without stopping at a predetermined gap height position (the first and second height positions as described above), and can be heated while the substrate W is continuously lowered. . In the case of a substrate containing mainly ruthenium, that is, a thin plate having a thickness of 100 μm or less, the deformation property due to heat is also included in the substrate of the present invention as claimed in claim 1 which is warped during the temperature rise process and thereafter returns to a flat substrate. "."

W‧‧‧Substrate
1‧‧‧ Heat treatment module
11‧‧‧Base Department
12‧‧‧ cylindrical wall
13‧‧‧ 盖部
14‧‧‧ Pillars
15‧‧‧ Yokohama
16‧‧‧Exhaust pipe
17‧‧‧ cabinet
111‧‧‧ openings
121‧‧‧ Lifting members
122‧‧‧ Lift motor
2‧‧‧heating plate
21‧‧‧Resistive heating element
22‧‧‧Power supply clearance pin
23‧‧‧Power Supply Department
24‧‧‧Substrate guide
25‧‧‧through
3‧‧‧Support pins
31‧‧‧ Lifting members
32‧‧‧ Lift motor
4‧‧‧Control Department
41‧‧‧CPU
42‧‧‧ memory
43‧‧‧ memory
421‧‧‧ Preheating temperature data
422‧‧‧ Heating stage data
423‧‧‧ Heating rate data
424‧‧‧heating sequence setting program
431‧‧‧ Warpage information
432‧‧‧heating characteristics data
433‧‧‧Hot resume setting information
5‧‧‧ facial

Fig. 1 is an exploded perspective view showing a heat treatment module according to an embodiment of the present invention. FIG. 2 is a block diagram showing the electrical configuration of the heat treatment module. 3(a) to (c) are explanatory diagrams for evaluating the relationship between the heating temperature of the substrate and the warpage amount over time. 4(a) to (c) are explanatory diagrams showing the relationship between the heating temperature and the warpage amount of the other types of evaluation substrates. 5(a) to (b) are explanatory diagrams showing a configuration example of warpage data. Fig. 6 is a view showing the relationship between the gap height from the heating plate and the temperature rising characteristics of the substrate. Fig. 7 is an explanatory view showing a production example of a heating sequence of a substrate. Fig. 8 is an explanatory diagram of a conventional heating sequence. Fig. 9 is an explanatory diagram of a calculation method of the heat history in the heating sequence of this example. Fig. 10 is a flow chart showing the operation of creating the heating sequence. Fig. 11 is a first operation explanatory view of the heat treatment module. Fig. 12 is a second operation explanatory view of the heat treatment module. 13(a) to (c) are diagrams showing a third operation of the heat treatment module. Fig. 14 is a fourth operation explanatory view of the heat treatment module. Fig. 15 is a schematic view showing the state of the substrate processed by the heat treatment module.

W‧‧‧Substrate

1‧‧‧ Heat treatment module

11‧‧‧Base Department

12‧‧‧ cylindrical wall

13‧‧‧ 盖部

121‧‧‧ Lifting members

122‧‧‧ Lift motor

2‧‧‧heating plate

21‧‧‧Resistive heating element

22‧‧‧Power supply gap pin

23‧‧‧Power Supply Department

24‧‧‧Substrate guide

3‧‧‧Support pins

31‧‧‧ Lifting members

32‧‧‧ Lift motor

4‧‧‧Control Department

41‧‧‧CPU

42‧‧‧ memory

43‧‧‧ memory

421‧‧‧ Preheating temperature data

422‧‧‧ Heating stage data

423‧‧‧ Heating rate data

424‧‧‧heating sequence setting program

431‧‧‧ Warpage information

432‧‧‧heating characteristics data

433‧‧‧Hot resume setting information

5‧‧‧ facial

Claims (17)

A heat treatment device for performing heating of a substrate, comprising: a heating plate, placing a substrate which is warped during heating and returning to a flat surface thereafter, and is adjusted to a heating temperature for heating the substrate; The heating plate can be freely protruded/dropped, and the substrate is supported from the bottom surface side; the lifting mechanism is disposed on the upper side of the heating plate, and transmits the transfer position of the substrate to the support member and the lower side of the heating plate. Between the positions, the support member is raised and lowered; and the control unit warms the substrate to a temperature at which the substrate is heated to a temperature due to heat from the heating plate while the substrate is lowered from the transfer position. Next, the elevating mechanism is actuated to perform position control of the support member, and the substrate is placed on the heating plate after the recovery time of the substrate returning to the flat is passed. The heat treatment device according to claim 1, wherein the control unit controls the elevating mechanism to stop the lowering of the substrate at a temperature higher than a temperature at which the warpage is generated, thereby stopping the support member from being lowered. The substrate of the object is warped, and after the recovery time, the support member is again lowered. The heat treatment apparatus according to claim 2, wherein the first height position is set to a position that is greater than a distance from the heating plate to a maximum displacement in a height direction in which the substrate is warped at the position. The heat treatment apparatus according to claim 2, wherein the control unit controls the elevating mechanism to stop the lowering of the support member at a second height position higher than the first height position, and After the substrate of the processing object is preheated, the supporting member is lowered again. The heat treatment apparatus according to any one of the first to third aspects of the present invention, wherein the control unit estimates the substrate to be processed based on a correspondence relationship between the warpage temperature and the recovery time of the substrate obtained in advance for each substrate type. The timing of the reply time has passed. The heat treatment apparatus according to any one of claims 1 to 3, wherein the control unit is based on a distance from the heating plate adjusted to the heating temperature to the substrate and the temperature of the substrate obtained in advance for each substrate type. The temperature of the substrate to be processed is estimated for the positional control when the support member is lowered. The heat treatment apparatus according to any one of claims 1 to 3, wherein the control unit determines a position and timing for raising and lowering the support member according to a heating sequence, the heating sequence being set such that the substrate is transferred at the transfer position After being transferred to the supporting member, the time integral value of the substrate temperature during the period from when the substrate is placed on the mounting surface of the heating plate to the time when the substrate is raised from the mounting surface is a value set in advance. The heat treatment device according to claim 7, wherein the time integral value of the substrate temperature is based on a relationship between a distance from the heating plate to the substrate obtained in advance according to each substrate type and an average temperature increase rate of the substrate. Seek. The heat treatment apparatus according to any one of claims 1 to 3, wherein the substrate is composed of a substrate material selected from the group consisting of lithium niobate, gallium arsenide, and lithium niobate. The heat treatment apparatus according to any one of claims 1 to 3, wherein the substrate is made of a substrate material having a thermal conductivity of 55 W/(m·° C. or less). A heat treatment method is characterized in that a substrate is placed on a heating plate for heating, and the following procedure is included: a substrate is supported at a transfer position set on an upper side of the heating plate, and the substrate is supported to be freely protruded/indented to the heating plate. a program for supporting a member; a process of causing warpage of the substrate by heating the substrate from the heat of the heating plate during a period in which the supporting member is lowered to move the substrate; a step of waiting for the substrate to return to a flat recovery time after the warpage is generated on the upper side of the heating plate; and after the recovery time elapses, lowering the support member toward the lower side of the heating plate, The procedure for placing the substrate on a heating plate. The heat treatment method according to claim 11, wherein the support member is stopped at a first height position at which the substrate is heated to a temperature higher than a temperature at which the warpage is generated, and a process of causing warpage of the substrate and waiting is performed. The process of replying to the time passed. The heat treatment method according to claim 12, wherein the first height position is set at a position that is greater than a distance from the heating plate to a maximum displacement in a height direction in which the substrate is warped at the position. The heat treatment method according to claim 12 or 13, further comprising the step of: stopping the support structure at a second height position on the upper side of the first height position, and causing the object to be treated After the substrate is preheated, the support member is lowered again. The heat treatment method according to any one of claims 11 to 13, wherein the substrate is composed of a substrate material selected from the group consisting of lithium niobate, gallium arsenide, and lithium niobate. The heat treatment method according to any one of claims 11 to 13, wherein the substrate is made of a substrate material having a thermal conductivity of 55 W/(m·° C. or less). A recording medium for storing a computer program for a heat treatment apparatus, the heat treatment apparatus having a heating plate for heating a substrate, the computer program comprising: performing any one of claims 11 to 13 A group of steps of the heat treatment method.