TW201608194A - Calcination jig and method for producing the same - Google Patents

Calcination jig and method for producing the same Download PDF

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Publication number
TW201608194A
TW201608194A TW104120699A TW104120699A TW201608194A TW 201608194 A TW201608194 A TW 201608194A TW 104120699 A TW104120699 A TW 104120699A TW 104120699 A TW104120699 A TW 104120699A TW 201608194 A TW201608194 A TW 201608194A
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Taiwan
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film
base material
base
mass
material portion
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TW104120699A
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Chinese (zh)
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TWI609162B (en
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川口一彦
山中健司
高井恵一
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三井金屬鑛業股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10Sintering only
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64Burning or sintering processes
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/89Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D3/00Charging; Discharging; Manipulation of charge
    • F27D3/12Travelling or movable supports or containers for the charge

Abstract

An objective of this invention is to provide a calcination jig having a substrate part with high thermal-shock resistance and improving the adhesion between the substrate part and a film part and suppressing the film form separating from the substrate part. To attain this objective, one of an embodiment of calcination jig (1) of this invention includes a substrate part (21), two layers or more of film parts (22), and a boundary part (23). The substrate part (21) includes a setting surface (21a) for setting calcined article(30), and at least includes silicon. The two layers or more of film parts (22) cover the setting surface (21a) of the substrate part (21), and include an oxide ceramic. The boundary part (23) is formed between the substrate part (21) and the film part (22) and includes a composite oxide containing silicon.

Description

燒製輔助具及燒製輔助具的製造方法 Method for manufacturing firing aid and firing aid

本發明所揭示的實施形態係關於一種燒製輔助具及燒製輔助具的製造方法。 The embodiment disclosed in the present invention relates to a method of manufacturing a baking aid and a baking aid.

以往,例如於製造搭載電容器等電子零件的陶瓷基板之步驟中,包括燒製基板的步驟。在如此之燒製步驟中,作為被燒製物之基板係載於燒製輔助具,在窯爐內進行燒製(例如,參照專利文獻1至3)。 Conventionally, for example, in the step of manufacturing a ceramic substrate on which an electronic component such as a capacitor is mounted, a step of firing the substrate is included. In the firing step, the substrate to be fired is placed in a firing aid and fired in a furnace (see, for example, Patent Documents 1 to 3).

上述的燒製輔助具係以下述的方式構成:於載置被燒製物的載置面具備包含受熱衝擊時之機械特性優異的碳化矽等之基材部,並且為抑制燒製時基材部與被燒製物之反應,以被燒製物的反應性低之膜部覆蓋基材部之載置面。 The above-mentioned baking aid is configured to include a base material portion such as ruthenium carbide or the like which is excellent in mechanical properties when subjected to a thermal shock, and a base material for suppressing firing when the mounting surface on which the object to be fired is placed In the reaction with the fired material, the film portion having a low reactivity of the fired material covers the mounting surface of the base material portion.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2009-234817號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-234817

[專利文獻2]日本特開2012-76940號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2012-76940

[專利文獻3]日本特開平10-7469號公報 [Patent Document 3] Japanese Patent Laid-Open No. 10-7469

然而,若以燒製輔助具設為上述的構造,在基材部與膜部,係起因於成分相異而線膨脹係數彼此大為不相異者係直接成為相接之構造。因此,於上述的被燒製物之燒製製備中,在燒製輔助具的基材部與膜部之間產生熱膨脹差,有時密合性降低,膜部從基材部剝離。 However, when the baking aid is configured as described above, the base portion and the film portion are directly in contact with each other because the components have different linear expansion coefficients. Therefore, in the above-described firing preparation of the fired product, a difference in thermal expansion occurs between the base material portion and the film portion of the firing aid, and the adhesion may be lowered, and the film portion may be peeled off from the base portion.

特別是近年來,於電容器等之電子零件中零件極小型化發展的結果,於燒製製備中,將燒製的電子零件與燒製輔助具僅以短時間一起從常溫投入非常高溫的爐中,再從爐中取出而結束燒製之快速燒製過程,漸成為主流。伴隨此情形,要求燒製輔助具即使曝露於較以往激烈的熱衝擊的情況下,仍不會產生基材部的破裂或膜部從基材部剝離者。 In particular, in recent years, as a result of the extremely miniaturization of parts in electronic parts such as capacitors, in the firing preparation, the fired electronic parts and the firing aids are put into the furnace at a very high temperature from the normal temperature in a short time. Then, it is taken out of the furnace to complete the rapid firing process of firing, and gradually becomes the mainstream. In response to this, it is required that the firing aid does not cause cracking of the base portion or peeling of the film portion from the base portion even when exposed to a severe thermal shock.

實施形態之其一態樣是有鑑於上述情況而成者,其目的係提供具備耐熱衝擊性高的基材部之同時,提升基材部與膜部之密合性,可抑制膜部對基材部之剝離之燒製輔助具及燒製輔助具的製造方法。 In view of the above, an object of the present invention is to provide a base material portion having high thermal shock resistance and to improve the adhesion between the base portion and the film portion, thereby suppressing the film portion to the base. A method of manufacturing a firing aid for stripping of a material portion and a firing aid.

關於實施形態之一態樣之燒製輔助具係具備基材部、2層以上的膜部、以及邊界部。基材部係具有載置被燒製物的載置面,並且至少含有矽。2層以上的膜部係覆蓋前述基材部的前述載置面且含有氧化物系陶瓷。 邊界部係形成於前述基材部與前述膜部之間且含有包含矽之複合氧化物。 A firing aid according to an aspect of the embodiment includes a base portion, a film portion of two or more layers, and a boundary portion. The base material portion has a mounting surface on which the object to be fired is placed, and contains at least ruthenium. The film portion of two or more layers covers the mounting surface of the base material portion and contains an oxide-based ceramic. The boundary portion is formed between the base material portion and the film portion and contains a composite oxide containing ruthenium.

若根據實施形態之一態樣,在燒製輔助具中,具備耐熱衝擊性高的基材部之同時,提升基材部與膜部之密合性,並可抑制膜部對於基材部之剝離。 According to one aspect of the embodiment, the base material portion having high thermal shock resistance is provided in the firing aid, and the adhesion between the base portion and the film portion is improved, and the film portion can be suppressed from being applied to the base portion. Stripped.

1‧‧‧燒製輔助具 1‧‧‧Burning aids

10‧‧‧底座 10‧‧‧Base

11‧‧‧平板部 11‧‧‧ Flat section

12‧‧‧支撐部 12‧‧‧Support

20‧‧‧乘載板 20‧‧‧Travel board

21‧‧‧基材部 21‧‧‧Parts

21a‧‧‧(基材部的)載置面 21a‧‧‧(Material part) mounting surface

22‧‧‧膜部 22‧‧‧Mouth Department

22a‧‧‧第1膜 22a‧‧‧1st film

22b‧‧‧第2膜 22b‧‧‧2nd film

23‧‧‧邊界部 23‧‧‧Borders Department

30‧‧‧被燒製物 30‧‧‧Furned goods

第1圖表示關於實施形態之燒製輔助具的示意立體圖。 Fig. 1 is a schematic perspective view showing a firing aid of the embodiment.

第2圖為第1圖所示之乘載板及被燒製物的示意俯視圖。 Fig. 2 is a schematic plan view of the carrier plate and the object to be fired shown in Fig. 1.

第3圖為第2圖的III-III線之示意剖面圖。 Fig. 3 is a schematic cross-sectional view taken along line III-III of Fig. 2.

第4圖為第3圖所示之乘載板的邊界部附近之部分擴大剖面圖。 Fig. 4 is a partially enlarged cross-sectional view showing the vicinity of the boundary portion of the carrier plate shown in Fig. 3.

第5圖表示製造燒製輔助具的處理順序之流程圖。 Fig. 5 is a flow chart showing the processing procedure for manufacturing the firing aid.

以下,參照附錄圖式,詳細說明本案所揭示的燒製輔助具及燒製輔助具的製造方法之實施形態。此外,本發明並不限於以下所示之實施形態。 Hereinafter, embodiments of the firing aid and the method of manufacturing the firing aid disclosed in the present invention will be described in detail with reference to the accompanying drawings. Further, the present invention is not limited to the embodiments shown below.

第1圖表示關於實施形態之燒製輔助具的示意立體圖。此外,於以下中,為了易於暸解說明,規定彼此正交的X軸方向、Y軸方向及Z軸方向,圖中表示將Z軸正方向設為垂直朝上的方向之3維的正交坐標系。如 此之正交坐標系有時也表示在後述說明所使用的其他圖式中。 Fig. 1 is a schematic perspective view showing a firing aid of the embodiment. In addition, in the following, in order to facilitate the description, the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to each other are defined, and the three-dimensional orthogonal coordinates in which the positive direction of the Z-axis is vertically upward are shown in the drawing. system. Such as This orthogonal coordinate system is sometimes also shown in other drawings used in the description below.

如第1圖所示,燒製輔助具1係具備底座10與乘載板20。然後,於燒製輔助具1的乘載板20上載置有被燒製物30。 As shown in Fig. 1, the firing aid 1 includes a base 10 and a passenger board 20. Then, the object 30 to be fired is placed on the carrier board 20 of the baking aid 1 .

被燒製物30係例如陶瓷基板,詳言之,為搭載電容器或壓電元件等各種電子零件之電子電路基板。亦即,上述的燒製輔助具1為電子電路基板用的燒製輔助具。此外,第1圖所示之被燒製物30的形狀及個數,僅為列舉而非受此限定。 The object to be fired 30 is, for example, a ceramic substrate, and is an electronic circuit board on which various electronic components such as a capacitor or a piezoelectric element are mounted. That is, the above-described firing aid 1 is a firing aid for an electronic circuit board. In addition, the shape and the number of the to-be-fired object 30 shown in FIG. 1 are only the illustration and are not limited by this.

燒製輔助具1係於乘載板20載置被燒製物30的狀態下,配置於圖中未顯示的窯爐內。然後,供給比較高溫的氣體至窯爐內,使窯爐內的溫度上升,燒製被燒製物30。 The firing aid 1 is placed in a kiln not shown in the figure in a state where the workpiece 30 is placed on the carrier board 20. Then, a relatively high-temperature gas is supplied to the kiln to raise the temperature in the kiln, and the fired product 30 is fired.

上述的底座10係具備平板部11與支撐部12。平板部11為可於上面承載乘載板20之形狀,具體上例如為略平板狀且俯視時為略矩形狀。 The base 10 described above includes the flat plate portion 11 and the support portion 12. The flat plate portion 11 has a shape in which the carrier plate 20 can be carried thereon, and is specifically, for example, a substantially flat plate shape and a substantially rectangular shape in a plan view.

支撐部12係有複數個(例如4個,在第1圖中有1個看不見),且形成於平板部11的下面側之適當位置。具體而言,支撐部12係以從平板部11的下面之四角部分向朝向Z軸負方向而突出的方式所形成,且支撐平板部11。 The support portion 12 has a plurality of (for example, four, one of which is not visible in the first drawing), and is formed at an appropriate position on the lower surface side of the flat plate portion 11. Specifically, the support portion 12 is formed so as to protrude from the four corner portions of the lower surface of the flat plate portion 11 in the negative direction of the Z-axis, and supports the flat plate portion 11.

如上述所構成之平板部11及支撐部12為耐火物且成形一體。具體而言,將粉狀或黏土狀的耐火物 流入圖中未顯示的模具中並進行加壓,亦即所謂擠壓成形,藉此,完成使平板部11及支撐部12形成一體之底座10。耐火物係例如氧化鋁、莫來石、氧化鋯等,可承受比較高溫(例如1500℃以上),且具有通氣性之材料。 The flat plate portion 11 and the support portion 12 configured as described above are refractory and integrally formed. Specifically, a pulverized or clay-like refractory The mold is introduced into a mold (not shown) and pressurized, that is, so-called extrusion molding, whereby the base 10 in which the flat plate portion 11 and the support portion 12 are integrally formed is completed. The refractory system is, for example, alumina, mullite, zirconia or the like, which can withstand relatively high temperatures (for example, 1500 ° C or higher) and has a gas permeable property.

此外,底座10並不限定於第1圖所示之形狀。亦即,底座10係例如可為匣缽或齒條等,要言之,只要是可承載乘載板20的形狀即可。另外,底座10與乘載板20不需為不同個體,亦可以一體化的方式構成。 Further, the base 10 is not limited to the shape shown in FIG. That is, the base 10 may be, for example, a crucible or a rack, etc., in other words, as long as it is a shape that can carry the carrier board 20. In addition, the base 10 and the passenger board 20 need not be different individuals, and may be configured in an integrated manner.

第2圖為第1圖所示之乘載板及被燒製物的示意俯視圖,第3圖為第2圖的III-III線之示意剖面圖。 Fig. 2 is a schematic plan view of the carrier plate and the object to be fired shown in Fig. 1, and Fig. 3 is a schematic cross-sectional view taken along line III-III of Fig. 2.

如第2圖及第3圖所示,乘載板20係具備:基材部21(在第2圖中看不見)、覆蓋基材部21的膜部22、於基材部21與膜部22之間所形成的邊界部23(在第2圖中看不見)。 As shown in FIGS. 2 and 3, the carrier board 20 includes a base portion 21 (not visible in FIG. 2), a film portion 22 covering the base portion 21, and a base portion 21 and a film portion. The boundary portion 23 formed between 22 (not visible in Fig. 2).

此外,如第3圖所示,於基材部21中,係於Z軸方向之上面21a載置有被燒製物30。以下,於基材部21中,將載置有被燒製物30的上面21a稱為「載置面」。此外,於第3圖中,為了易於理解,將膜部22及邊界部23等朝Z軸方向放大表示。 Further, as shown in FIG. 3, in the base material portion 21, the object 30 to be fired is placed on the upper surface 21a in the Z-axis direction. Hereinafter, in the base material portion 21, the upper surface 21a on which the object 30 to be fired is placed is referred to as a "mounting surface". In addition, in the third drawing, the film portion 22, the boundary portion 23, and the like are enlarged and shown in the Z-axis direction for the sake of easy understanding.

另外,上述的基材部21與膜部22如後面所述,線膨脹係數彼此相異。因此,進行上述的被燒製物30的燒製時,基材部21與膜部22之間會產生相當大的熱膨脹差,有時基材部21與膜部22之密合性降低,膜部22從基材部21剝離。 Further, the base portion 21 and the film portion 22 described above have different linear expansion coefficients as described later. Therefore, when the above-described baked product 30 is fired, a considerable difference in thermal expansion occurs between the base portion 21 and the film portion 22, and the adhesion between the base portion 21 and the film portion 22 may be lowered. The portion 22 is peeled off from the base portion 21 .

因此,關於本實施形態之燒製輔助具1中,即使於基材部21及膜部22產生如前述之熱膨脹差時,藉由提升基材部21與膜部22之密合性,亦可實現抑制膜部22對基材部21之剝離。以下,詳細說明該燒製輔助具1。 Therefore, in the baking aid 1 of the present embodiment, even when the difference in thermal expansion between the base portion 21 and the film portion 22 occurs, the adhesion between the base portion 21 and the film portion 22 can be improved. Peeling of the substrate portion 21 by the suppression film portion 22 is achieved. Hereinafter, the firing aid 1 will be described in detail.

基材部21係於俯視下形成略矩形狀,以及於Z軸方向之厚度為比較薄的薄板狀。如此,藉由使基材部21設為薄板狀,可使基材部21甚至燒製輔助具1本身輕量化。 The base material portion 21 is formed in a substantially rectangular shape in plan view and has a relatively thin plate shape in the Z-axis direction. As described above, by making the base material portion 21 into a thin plate shape, the base material portion 21 can be made lighter even by the baking aid 1 itself.

又,基材部21係以至少含有矽的方式所形成之陶瓷基材。詳言之,基材部21係以包含碳化矽及氮化矽的方式形成。此外,在上述中,雖已使基材部21含有碳化矽及氮化矽,惟亦可以含有碳化矽及氮化矽中任一者的方式構成,總言之,只要是包含矽的材料即可。 Further, the base material portion 21 is a ceramic base material formed to contain at least niobium. In detail, the base portion 21 is formed to include tantalum carbide and tantalum nitride. Further, in the above, the base material portion 21 is made of tantalum carbide and tantalum nitride, but may be composed of any of tantalum carbide and tantalum nitride. In short, it is a material containing niobium. can.

此處,說明有關形成基材部21的過程。例如,在使基材部21含有碳化矽的情形,係粉末狀的碳化矽在於基材部21含有氮化矽時,金屬矽與氧化鋁等調配而投入至成形器中。此外,在基材部21含有氮化矽時,除了金屬矽以外,或,代替金屬矽,亦可氮化矽等之原料同時投入至成形器中。然後,藉由成形器而製作薄板狀的成形品。 Here, a process of forming the base material portion 21 will be described. For example, in the case where the base material portion 21 contains niobium carbide, the powdery niobium carbide is used in the case where the base material portion 21 contains tantalum nitride, and the metal niobium is blended with alumina or the like and introduced into the former. Further, when the base material portion 21 contains tantalum nitride, a raw material such as tantalum nitride may be simultaneously introduced into the former in addition to the metal tantalum or in place of the metal crucible. Then, a thin plate-shaped molded article is produced by a former.

然後,上述的成形品係於圖中未顯示的窯爐內,藉由在惰性氣體之氮氣環境下的加熱而燒製。此外,金屬矽係與氮氣進行燒結反應而成為氮化矽。 Then, the above-mentioned molded product is fired in a kiln not shown in the drawing by heating under a nitrogen atmosphere of an inert gas. Further, the metal lanthanide is subjected to a sintering reaction with nitrogen gas to become tantalum nitride.

如此地,基材部21係以至少包含矽的方式形成。又,基材部21也可以包含碳化矽及氮化矽的複合材 所形成。此外,基材部21的線膨脹係數(熱膨脹係數)例如為4.5×10-6/K。 In this manner, the base portion 21 is formed to include at least ruthenium. Further, the base material portion 21 may be formed of a composite material of tantalum carbide and tantalum nitride. Further, the linear expansion coefficient (thermal expansion coefficient) of the base material portion 21 is, for example, 4.5 × 10 -6 /K.

在繼續基材部21的說明之前,在此,若說明有關膜部22,膜部22係具備第1膜22a與第2膜22b。第1膜22a係以覆蓋基材部21的載置面21a之全面的方式形成。 Before the description of the base portion 21 is continued, the film portion 22 is provided with the first film 22a and the second film 22b. The first film 22a is formed to cover the entire surface of the mounting surface 21a of the base material portion 21.

此外,在上述中,第1膜22a係以覆蓋基材部21的載置面21a之全面的方式形成,惟此係列示而不受此所限制。亦即,例如基材部21的載置面21a之中,亦可以第1膜22a只部分覆蓋載置有被燒製物30的區域。 Further, in the above description, the first film 22a is formed so as to cover the entire surface of the mounting surface 21a of the base portion 21, but the series is not limited thereto. In other words, for example, in the mounting surface 21a of the base portion 21, the first film 22a may only partially cover the region on which the object 30 is placed.

第2膜22b係第1膜22a的Z軸正方向側之面,換言之,第1膜22a中積層於與基材部21側之面相反側之面,且包含對於被燒製物30反應性低的陶瓷者。如此地,膜部22係設為具有第1膜22a及第2膜22b之2層的層結構。 The second film 22b is a surface on the positive side in the Z-axis direction of the first film 22a, in other words, the first film 22a is laminated on the surface opposite to the surface on the side of the base portion 21, and contains reactivity with respect to the object 30 to be fired. Low ceramics. In this manner, the film portion 22 has a layer structure having two layers of the first film 22a and the second film 22b.

2層的膜部22之中,面對基材部21側的層之第1膜22a係以含有氧化物的方式構成且包含陶瓷者。亦即,膜部22的第1膜22a、第2膜22b均含有氧化物系陶瓷。具體而言,例如第1膜22a係以含有氧化鋁、氧化矽及莫來石中之1種以上的方式構成。 Among the two-layered film portion 22, the first film 22a facing the layer on the side of the base material portion 21 is formed to contain an oxide and contains ceramics. In other words, the first film 22a and the second film 22b of the film portion 22 each contain an oxide-based ceramic. Specifically, for example, the first film 22a is configured to contain one or more of alumina, cerium oxide, and mullite.

又,構成第1膜22a的陶瓷之線膨脹係數,設為基材部21的線膨脹係數之0.5至2倍的範圍,具體而言,第1膜22a的線膨脹係數為2.25×10-6至9.0×10-6/K。又,較佳係第1膜22a的線膨脹係數,例如較基材部21的線膨 脹係數高些許之值,且與第2膜22b的線膨脹係數(後述)同程度或稍低之值。如此地,在基材部21與第1膜22a彼此的線膨脹係數相異。此外,對於第1膜22a、第2膜22b之其他結構,係說明於後。 In addition, the linear expansion coefficient of the ceramic constituting the first film 22a is in the range of 0.5 to 2 times the linear expansion coefficient of the base portion 21, and specifically, the linear expansion coefficient of the first film 22a is 2.25 × 10 -6 . To 9.0×10 -6 /K. Moreover, it is preferable that the linear expansion coefficient of the first film 22a is, for example, a value slightly higher than the linear expansion coefficient of the base portion 21, and is equal to or slightly lower than the linear expansion coefficient (described later) of the second film 22b. As described above, the linear expansion coefficients of the base portion 21 and the first film 22a are different from each other. Further, other configurations of the first film 22a and the second film 22b will be described later.

如上所述,包含矽的基材部21被包含氧化物系陶瓷的膜部22之第1膜22a覆蓋時,於基材部21的載置面21a中矽進行氧化而與第1膜22a的氧化物反應。藉此,在基材部21與第1膜22a之間形成含有複合氧化物的邊界部23(參照第3圖)。邊界部23的複合氧化物例如為包含鋁與矽的複合氧化物(Al-Si-O)。 As described above, when the base material portion 21 including the ruthenium is covered by the first film 22a of the film portion 22 including the oxide-based ceramic, the ruthenium is oxidized on the mounting surface 21a of the base material portion 21 to be oxidized to the first film 22a. Oxide reaction. Thereby, the boundary portion 23 containing the composite oxide is formed between the base portion 21 and the first film 22a (see FIG. 3). The composite oxide of the boundary portion 23 is, for example, a composite oxide (Al-Si-O) containing aluminum and ruthenium.

藉由上述之邊界部23,基材部21與膜部22的第1膜22a之接合變牢固,可提升基材部21與膜部22之密合性。藉此,可抑制膜部22對基材部21之剝離。 By the boundary portion 23 described above, the bonding between the base portion 21 and the first film 22a of the film portion 22 is made firm, and the adhesion between the base portion 21 and the film portion 22 can be improved. Thereby, peeling of the film part 22 to the base material part 21 can be suppressed.

第4圖為第3圖所示之乘載板的邊界部23附近之部分放大剖面圖。上述的邊界部23係形成於基材部21與膜部22的第1膜22a之間,提升基材部21與膜部22的第1膜22a之密合性,此係透過第4圖所示之EDS(Energy Dispersive X-ray Spectroscopy)影像也可明白。 Fig. 4 is a partially enlarged cross-sectional view showing the vicinity of the boundary portion 23 of the carrier plate shown in Fig. 3. The boundary portion 23 is formed between the base portion 21 and the first film 22a of the film portion 22, and the adhesion between the base portion 21 and the first film 22a of the film portion 22 is improved. The EDS (Energy Dispersive X-ray Spectroscopy) image can also be understood.

又,如上所述,由於基材部21及膜部22之線膨脹係數彼此相異,故被燒製物30在燒製時會產生熱膨脹差。然而,即使在基材部21及膜部22產生熱膨脹差的情形,從藉由上述的邊界部23而提升基材部21與膜部22之密合性的觀點來看,可抑制膜部22對基材部21之剝離。 Further, as described above, since the linear expansion coefficients of the base portion 21 and the film portion 22 are different from each other, the baked product 30 has a difference in thermal expansion at the time of firing. However, even when the base portion 21 and the film portion 22 are inferior in thermal expansion, the film portion 22 can be suppressed from the viewpoint of improving the adhesion between the base portion 21 and the film portion 22 by the boundary portion 23 described above. Peeling of the base portion 21.

另外,如上所述,藉由將第1膜22a設成線膨脹係數為基材部21與第2膜22b之中間之值的材質,可緩和熱應力,抑制膜部22對基材部21之剝離。 In addition, as described above, by setting the first film 22a to a material having a coefficient of linear expansion between the base portion 21 and the second film 22b, thermal stress can be alleviated, and the film portion 22 can be suppressed from being applied to the base portion 21. Stripped.

就基材部21之更佳的組成而言,碳化矽較佳係含有45至75質量%,更佳為含有60至70質量%,並且氮化矽較佳為含有20至50質量%、更佳為含有30至40質量%者。更且,基材部21中氧化鋁較佳為含有1至10質量%、更佳為含有3至7質量%。 In terms of a more preferable composition of the substrate portion 21, the cerium carbide is preferably contained in an amount of 45 to 75% by mass, more preferably 60 to 70% by mass, and the cerium nitride is preferably contained in an amount of 20 to 50% by mass. Jia is 30 to 40% by mass. Further, the alumina in the base material portion 21 is preferably contained in an amount of from 1 to 10% by mass, more preferably from 3 to 7% by mass.

如此地,藉由將基材部21中之碳化矽與氮化矽之比例以上述的方式設定,可更加促進基材部21的矽與膜部22的氧化物之反應,因而,可有效率形成邊界部23。 By setting the ratio of niobium carbide to tantalum nitride in the base portion 21 as described above, the reaction between the tantalum of the base portion 21 and the oxide of the film portion 22 can be further promoted, and therefore, the efficiency can be improved. A boundary portion 23 is formed.

又,於基材部21中,在形成膜部22之前,較佳係載置面21a預先經噴砂處理而被粗糙化。詳言之,藉由上述的粗糙化,基材部21中之載置面21a的表面粒糙度Ra較佳為4至20μm,更佳為5至15μm,又更佳為5至8μm。在此,表面粒糙度Ra係指由JIS B0601:2013所記載的「算術平均粒糙度Ra」所測得之值。 Further, in the base material portion 21, before the film portion 22 is formed, it is preferable that the mounting surface 21a is roughened by sandblasting in advance. In detail, the surface roughness Ra of the mounting surface 21a in the base portion 21 is preferably 4 to 20 μm , more preferably 5 to 15 μm , still more preferably 5 by the above-described roughening. Up to 8 μ m. Here, the surface grain roughness Ra refers to a value measured by "arithmetic average grain roughness Ra" described in JIS B0601:2013.

藉此,於基材部21的載置面上,增加與膜部22的接觸面積,同時藉由錨定效果可進一步提升基材部21與膜部22之密合性。 Thereby, the contact area with the film portion 22 is increased on the mounting surface of the base portion 21, and the adhesion between the base portion 21 and the film portion 22 can be further improved by the anchoring effect.

又,基材部21係使用包含比較多氣孔之多孔質的陶瓷基材。具體而言,例如基材部21的氣孔率較佳為4至38%,更佳為5至35%,又更佳為8至15%。 Further, as the base portion 21, a porous ceramic substrate containing relatively many pores is used. Specifically, for example, the porosity of the base portion 21 is preferably from 4 to 38%, more preferably from 5 to 35%, still more preferably from 8 to 15%.

如此地,在基材部21為多孔質,且氣孔率設定成上述值,藉此,例如在噴砂處理之時於載置面21a容易形成凹凸,因而,可有效率進行基材部21之表面粗糙化。 In this manner, when the base material portion 21 is porous and the porosity is set to the above value, for example, unevenness is easily formed on the mounting surface 21a at the time of sandblasting, and therefore the surface of the base material portion 21 can be efficiently performed. Roughening.

另外,藉由基材部21為多孔質且設為上述的氣孔率,使得在噴砂處理之時,於基材部21的載置面21a形成比較多的凹凸。藉此,可更進一步增加基材部21與膜部22之接觸面積,並藉由上述錨定效果可進一步提升基材部21與膜部22之密合性。 In addition, the base portion 21 is porous and has the above-described porosity, so that a relatively large number of irregularities are formed on the mounting surface 21a of the base portion 21 at the time of sandblasting. Thereby, the contact area between the base material portion 21 and the film portion 22 can be further increased, and the adhesion between the base material portion 21 and the film portion 22 can be further improved by the anchoring effect described above.

又,於第3圖中,第1膜22a的Z軸方向的厚度較佳為40至210μm,更佳為50至180μm,又更佳為80至120μm。藉由將第1膜22a的厚度設定成上述值,例如,易產生基材部21的矽與膜部22的氧化物之反應,並且可抑制在膜內產生龜裂等。 Further, in Fig. 3, the thickness of the first film 22a in the Z-axis direction is preferably 40 to 210 μm , more preferably 50 to 180 μm , still more preferably 80 to 120 μm . By setting the thickness of the first film 22a to the above value, for example, it is easy to cause the reaction between the ruthenium of the base portion 21 and the oxide of the film portion 22, and it is possible to suppress occurrence of cracks or the like in the film.

又,第2膜22b的Z軸方向的厚度較佳為40至320μm,更佳為50至300μm,又更佳為80至180μm。藉由第2膜22b的厚度設定成上述之值,可抑制例如在膜內產生龜裂等。 Further, the thickness of the second film 22b in the Z-axis direction is preferably 40 to 320 μm , more preferably 50 to 300 μm , still more preferably 80 to 180 μm . By setting the thickness of the second film 22b to the above value, it is possible to suppress, for example, cracks or the like from occurring in the film.

如此地,具備第1膜22a及第2膜22b之膜部22的厚度,較佳係在於80至530μm的範圍內,更佳係在於100至480μm的範圍內,又更佳係在於210至300μm的範圍內。藉此,如上述,容易產生基材部21的矽與膜部22的氧化物之反應,並且可抑制在膜內產生龜裂等。 As described above, the thickness of the film portion 22 including the first film 22a and the second film 22b is preferably in the range of 80 to 530 μm , more preferably in the range of 100 to 480 μm , and more preferably It lies in the range of 210 to 300 μm . As a result, as described above, the reaction between the ruthenium of the base portion 21 and the oxide of the film portion 22 is likely to occur, and generation of cracks or the like in the film can be suppressed.

又,第1膜22a及第2膜22b的氣孔率較佳 係在於15至35%的範圍內,更佳係在於20至30%的範圍內。藉此,於第1膜22a、第2膜22b中,可確保與基材部21的密合性及膜部22本身的強度之兩者,並且在燒製時可有效率朝被燒製物30傳達來自基材部21、邊界部23的熱。 Further, the porosity of the first film 22a and the second film 22b is preferably It is in the range of 15 to 35%, more preferably in the range of 20 to 30%. Thereby, in the first film 22a and the second film 22b, both the adhesion to the base portion 21 and the strength of the film portion 22 itself can be secured, and the baked product can be efficiently smothered during firing. The heat from the base portion 21 and the boundary portion 23 is transmitted.

又,2層的膜部22中面對基材部21側之層以外的層之第2膜22b,係以含有氧化物例如氧化鋯的方式構成。氧化鋯係在燒製時難以與被燒製物30反應,即具有所謂之難反應性。藉此,在燒製時可抑制膜部22的第2膜22b與被燒製物30反應。 In addition, the second film 22b of the layer of the two-layer film portion 22 facing the layer on the side of the base portion 21 is formed to contain an oxide such as zirconia. The zirconia is difficult to react with the object 30 to be fired during firing, that is, it has a so-called incompatibility. Thereby, the second film 22b of the film portion 22 can be prevented from reacting with the object 30 to be fired during firing.

此外,在上述中,雖使第2膜22b包含氧化鋯,惟並不限定於此。亦即,第2膜22b只要係具有難反應性的陶瓷即可,亦可包含例如氧化鈦等。 Further, in the above, the second film 22b is made of zirconia, but is not limited thereto. In other words, the second film 22b may be a ceramic having poor reactivity, and may contain, for example, titanium oxide.

又,第2膜22b的線膨脹係數係設為第1膜22a的線膨脹係數之1.0至2.5倍的範圍。具體而言,第2膜22b的線膨脹係數為2.25×10-6至22.5×10-6/K,且與第1膜22a的線膨脹係數(2.25×10-6至9.0×10-6/K)同程度,或更高的值。 Moreover, the linear expansion coefficient of the second film 22b is in the range of 1.0 to 2.5 times the linear expansion coefficient of the first film 22a. Specifically, the coefficient of linear expansion of the second film 22b is 2.25 × 10 -6 to 22.5 × 10 -6 /K, and the coefficient of linear expansion of the first film 22a (2.25 × 10 -6 to 9.0 × 10 -6 / K) The same degree, or higher value.

於上述的基材部21、第1膜22a及第2膜22b中,係可使各個之線膨脹係數以基材部21、第1膜22a、第2膜22b的順序變大的方式進行。亦即,可使基材部21、第1膜22a及第2膜22b以線膨脹係數成為階段性的方式來配置。如此地進行配置時,即使為在被燒製物30的燒製時溫度產生變化的情形,各部位間的熱膨脹差仍會變小, 進而,可有效抑制第1膜22a從基材部21之剝離、或第2膜22b從第1膜22a之剝離。 In the base material portion 21, the first film 22a, and the second film 22b, the respective linear expansion coefficients can be increased in the order of the base portion 21, the first film 22a, and the second film 22b. In other words, the base portion 21, the first film 22a, and the second film 22b can be arranged such that the linear expansion coefficient is stepwise. When the arrangement is performed in this manner, even if the temperature changes during the firing of the object 30, the difference in thermal expansion between the parts becomes small. Further, peeling of the first film 22a from the base portion 21 or peeling of the second film 22b from the first film 22a can be effectively suppressed.

接著,說明有關製造上述的燒製輔助具1(正確係乘載板20)之處理。第5圖表示製造燒製輔助具1的處理順序之流程圖。 Next, a process for manufacturing the above-described firing aid 1 (correct carrier plate 20) will be described. Fig. 5 is a flow chart showing the processing procedure for manufacturing the firing aid 1.

首先,利用上述的反應燒結,形成至少包含矽的基材部21(步驟S1)。接著,對於在步驟S1所形成的基材部21之載置面21a進行噴砂處理而使其表面粗糙化(步驟S2)。 First, the base material portion 21 containing at least ruthenium is formed by the above-described reaction sintering (step S1). Next, the mounting surface 21a of the base material portion 21 formed in the step S1 is subjected to sandblasting to roughen the surface (step S2).

此外,在上述中,係藉由噴砂處理而使基材部21表面粗糙化,惟並不限定於此。亦即,亦可使基材部21的載置面21a以例如帶式砂磨機、圓盤式研磨機或直柄研磨機等的研磨機、或砂紙等進行研磨而使其表面粗糙化。 Further, in the above, the surface of the base material portion 21 is roughened by sand blasting, but is not limited thereto. In other words, the mounting surface 21a of the base material portion 21 may be polished by a grinding machine such as a belt sand mill, a disc mill or a straight shank mill, or a sandpaper or the like to roughen the surface.

接著,使基材部21的載置面21a以膜部22覆蓋,於基材部21與膜部22之間形成邊界部23(步驟S3)。具體而言,例如於基材部21的載置面21a藉由熔射法形成第1膜22a,接著,於第1膜22a之上藉由熔射法形成第2膜22b。 Then, the mounting surface 21a of the base material portion 21 is covered with the film portion 22, and the boundary portion 23 is formed between the base portion 21 and the film portion 22 (step S3). Specifically, for example, the first film 22a is formed by the spraying method on the mounting surface 21a of the base portion 21, and then the second film 22b is formed by the spraying method on the first film 22a.

上述的熔射法係可使用氣體電漿熔射,但並不限於此,亦可使用例如水電漿熔射等。此外,載體氣體係使用Ar與N2。又,為提高在此所形成的熔射膜之氣孔率,使用平均粒徑160至300μm2的粗粒子,且使熔射槍與棚板的距離設為100至300mm左右,形成熔射膜。 The above-described spraying method may be a gas plasma spraying, but is not limited thereto, and for example, water plasma spraying or the like may be used. Further, the carrier gas system uses Ar and N 2 . Further, in order to increase the porosity of the molten film formed here, coarse particles having an average particle diameter of 160 to 300 μm 2 are used, and the distance between the spray gun and the shelf is set to about 100 to 300 mm to form a spray. membrane.

藉此,邊界部23形成於基材部21與第1膜22a之間,完成如第3圖所示之燒製輔助具1(正確是乘載板20)。如此地,膜部22係藉由熔射法所成膜的熔射膜,詳細而言,係藉由例如以電漿熔射進行加熱的熔射材,例如噴出氧化鋁或氧化鋯等而進行成膜。 Thereby, the boundary portion 23 is formed between the base portion 21 and the first film 22a, and the firing aid 1 (correctly the carrier plate 20) as shown in Fig. 3 is completed. In this manner, the film portion 22 is a spray film formed by a spray method, and in detail, for example, a spray material heated by plasma spray, for example, alumina or zirconia is sprayed. Film formation.

如上所述,藉由使用熔射法,可將膜部22輕易地成膜於基材部21。此外,在上述中,係以熔射法使膜部22成膜,惟並不限定於此,亦可使用例如CVD(化學氣相沉積;chemical Vapor Deposition)法或PVD(物理氣相沉積;Physical vapor deposition)法等其他的成膜方法。 As described above, the film portion 22 can be easily formed on the base material portion 21 by using a spray method. Further, in the above, the film portion 22 is formed by a melt method, but is not limited thereto, and for example, CVD (chemical vapor deposition) or PVD (physical vapor deposition; physical) may be used. Other film forming methods such as vapor deposition).

(實施例) (Example)

其次,對於依上述的處理順序而製造燒製輔助具1時之實施例,參照表1而進行說明。 Next, an embodiment in which the baking aid 1 is manufactured in the above-described processing order will be described with reference to Table 1.

(實施例1) (Example 1)

如表1所示,將實施例1中之基材部21的化學組成設為碳化矽75質量%、氮化矽21質量%、氧化鋁4質量%。又,將基材部21的氣孔率設為35%、表面粗糙度Ra設為4μm。於第1膜22a中,將厚度設為100μm、氣孔率設為25%,於第2膜22b中,將厚度設為150μm、氣孔率設為25%。 As shown in Table 1, the chemical composition of the base material portion 21 in Example 1 was 75% by mass of niobium carbide, 21% by mass of tantalum nitride, and 4% by mass of alumina. Moreover, the porosity of the base material portion 21 was 35%, and the surface roughness Ra was 4 μm . In the first film 22a, the thickness was set to 100 μm and the porosity was 25%. In the second film 22b, the thickness was 150 μm and the porosity was 25%.

對於上述的燒製輔助具1,實行下述之熱衝擊試驗及熱循環試驗,以驗證燒製輔助具1的耐熱衝擊性、至膜部22對基材部21剝離為止的熱循環試驗之次數、膜部22與被燒製物30的反應之有無。其驗證結果表示於表1。 The above-described firing aid 1 is subjected to the following thermal shock test and thermal cycle test to verify the thermal shock resistance of the baking aid 1 and the number of thermal cycle tests until the film portion 22 peels off the base portion 21 The presence or absence of the reaction between the film portion 22 and the object 30 to be fired. The results of the verification are shown in Table 1.

具體上熱衝擊試驗中,首先將燒製輔助具1置入於設定在指定溫度之爐內而急速加熱。在該狀態下保持1小時,將其取出爐外而進行急速冷卻。在表1的耐熱衝擊性中,以上述的條件表示在材料產生龜裂(破裂)的溫度,其中,使在600℃以上之比較高溫下於材料產生龜裂者設為◎,在500℃以上且未達600℃下產生龜裂者設為○,在未達500℃下產生龜裂者設為×,以3階段式評價。此外,熱衝擊試驗溫度係由300℃開始,每次提高50℃的溫度,直至破損為止繼續試驗而進行評價。又,上述的3階段式評價中,將◎及○視為滿足燒製輔助具的標準之評價。 Specifically, in the thermal shock test, the firing aid 1 is first placed in a furnace set at a predetermined temperature to be rapidly heated. In this state, it was kept for 1 hour, and it was taken out of the furnace and rapidly cooled. In the thermal shock resistance of Table 1, the temperature at which the material is cracked (broken) is indicated by the above conditions, and in the case where the material is cracked at a relatively high temperature of 600 ° C or higher, the crack is set to ◎, and the temperature is 500 ° C or higher. When the crack was not generated at 600 ° C, it was set to ○, and when it was less than 500 ° C, the crack was set to ×, and it was evaluated in a three-stage manner. Further, the thermal shock test temperature was started from 300 ° C, and the temperature was raised by 50 ° C each time until the test was continued until the damage was observed. Moreover, in the above-described three-stage evaluation, ◎ and ○ were regarded as evaluations satisfying the criteria of the baking aid.

在熱循環試驗中,首先,於設為100×85mm 平方大小的燒製輔助具1之上,靜置成形為70×40×3mm的鈦酸鋇粉末之壓粉體,使其升溫至還原環境1300℃。更具體而言,歷時5小時使環境溫度升溫至1300℃,維持其狀態1小時。接著,歷時10小時使環境溫度降溫至升溫前的溫度。 In the thermal cycle test, first, set to 100 × 85mm On the square-sized baking aid 1 , a compact of 70 × 40 × 3 mm barium titanate powder was allowed to stand, and the temperature was raised to 1300 ° C in a reducing atmosphere. More specifically, the ambient temperature was raised to 1300 ° C over 5 hours, and the state was maintained for 1 hour. Next, the ambient temperature was lowered to a temperature before the temperature rise for 10 hours.

將上述之一連串的升溫、溫度維持、降溫的處理設為1循環,反覆進行此1循環。然後,確認至膜部22從基材部21剝離為止的次數、以及膜部22與被燒製物30的反應之有無。此外,將於乘載板20上附著有被燒製物30的顆粒者判斷為“有反應”。又,反覆進行熱循環試驗,在超過15次而膜部22仍未剝離時,於表1之至膜部產生剝離為止的次數欄中表示為「15↑」。 One of the above-described series of steps of temperature rise, temperature maintenance, and temperature reduction was set to one cycle, and the above cycle was repeated. Then, the number of times until the film portion 22 is peeled off from the base portion 21 and the presence or absence of the reaction between the film portion 22 and the object 30 to be fired are confirmed. Further, the granules to which the fired material 30 is adhered to the passenger board 20 are judged to be "reactive". Further, the heat cycle test was repeated, and when the film portion 22 was not peeled off more than 15 times, it was indicated as "15 ↑" in the column from the time when the film portion was peeled off in Table 1.

(實施例2) (Example 2)

在實施例2中,將基材部21的化學組成設為碳化矽67質量%、氮化矽29質量%、氧化鋁4質量%。又,將基材部21的氣孔率設為12%、表面粗糙度Ra設為20μm。又,於第1膜22a中,將厚度設為120μm、氣孔率設為25%,於第2膜22b中,將厚度設為180μm、氣孔率設為25%。將藉由實施例2及後述的實施例3至13所得的燒製輔助具1之耐熱衝擊性、至膜部產生剝離為止的次數、以及膜部22與被燒製物30的反應之有無表示於表1。 In Example 2, the chemical composition of the base material portion 21 was 67% by mass of niobium carbide, 29% by mass of tantalum nitride, and 4% by mass of alumina. Moreover, the porosity of the base material portion 21 was 12%, and the surface roughness Ra was 20 μm . In the first film 22a, the thickness is 120 μm and the porosity is 25%. In the second film 22b, the thickness is 180 μm and the porosity is 25%. The thermal shock resistance of the baking aid 1 obtained in Example 2 and Examples 3 to 13 to be described later, the number of times until peeling of the film portion, and the presence or absence of the reaction between the film portion 22 and the object 30 to be fired are shown. In Table 1.

(實施例3) (Example 3)

在實施例3中,將基材部21的化學組成設為碳化矽54質量%、氮化矽40質量%、氧化鋁6質量%。又,將基 材部21的氣孔率設為9%、表面粗糙度Ra設為6μm。又,於第1膜22a中,將厚度設為50μm、氣孔率設為15%,於第2膜22b中,將厚度設為50μm、氣孔率設為25%。 In the third embodiment, the chemical composition of the base portion 21 is 54% by mass of lanthanum carbide, 40% by mass of lanthanum nitride, and 6% by mass of alumina. Moreover, the porosity of the base material portion 21 was 9%, and the surface roughness Ra was set to 6 μm . In the first film 22a, the thickness is 50 μm and the porosity is 15%. In the second film 22b, the thickness is 50 μm and the porosity is 25%.

(實施例4) (Example 4)

在實施例4中,將基材部21的化學組成設為碳化矽50質量%、氮化矽50質量%,而不含氧化鋁。又,將基材部21的氣孔率設為6%、表面粗糙度Ra設為8μm。又,於第1膜22a中,將厚度設為180μm、氣孔率設為35,於第2膜22b中,將厚度設為320μm、氣孔率設為25%。 In the fourth embodiment, the chemical composition of the base portion 21 is 50% by mass of lanthanum carbide and 50% by mass of lanthanum nitride, and alumina is not contained. Moreover, the porosity of the base material portion 21 was 6%, and the surface roughness Ra was set to 8 μm . In the first film 22a, the thickness is 180 μm and the porosity is 35. In the second film 22b, the thickness is 320 μm and the porosity is 25%.

(實施例5) (Example 5)

在實施例5中,將基材部21的化學組成設為碳化矽69質量%、氮化矽30質量%、氧化鋁1質量%。又,將基材部21的氣孔率設為8%、表面粗糙度Ra設為8μm。又,於第1膜22a、第2膜22b中,將第2膜22b的氣孔率設為30%,除此以外的厚度或第1膜22a的氣孔率則與實施例1相同。 In Example 5, the chemical composition of the base material portion 21 was 69% by mass of niobium carbide, 30% by mass of tantalum nitride, and 1% by mass of alumina. Moreover, the porosity of the base material portion 21 was 8%, and the surface roughness Ra was set to 8 μm . In the first film 22a and the second film 22b, the porosity of the second film 22b is set to 30%, and the other thickness or the porosity of the first film 22a is the same as that of the first embodiment.

(實施例6) (Example 6)

在實施例6中,將基材部21的化學組成設為碳化矽59質量%、氮化矽32質量%、氧化鋁9質量%。又,將基材部21的氣孔率設為11%、表面粗糙度Ra設為8μm。此外,於第1膜22a、第2膜22b中,將第1膜22a的厚度設為55%,除此以外的氣孔率及第2膜22b的厚度則與實施例1相同。 In Example 6, the chemical composition of the base material portion 21 was 59% by mass of lanthanum carbide, 32% by mass of lanthanum nitride, and 9% by mass of alumina. Moreover, the porosity of the base material portion 21 was 11%, and the surface roughness Ra was set to 8 μm . In addition, in the first film 22a and the second film 22b, the thickness of the first film 22a is set to 55%, and the other porosity and the thickness of the second film 22b are the same as those in the first embodiment.

(實施例7) (Example 7)

在實施例7中,將基材部21的化學組成設為碳化矽63質量%、氮化矽31質量%、氧化鋁6質量%。又,將基材部21的氣孔率設為9%、表面粗糙度Ra設為7μm。此外,第1膜22a、第2膜22b的厚度及氣孔率則與實施例1相同。 In the seventh embodiment, the chemical composition of the base portion 21 is 63% by mass of lanthanum carbide, 31% by mass of lanthanum nitride, and 6% by mass of alumina. Moreover, the porosity of the base material portion 21 was 9%, and the surface roughness Ra was set to 7 μm . The thickness and porosity of the first film 22a and the second film 22b are the same as those in the first embodiment.

(實施例8) (Example 8)

在實施例8中,將基材部21的化學組成設為碳化矽66質量%、氮化矽30質量%、氧化鋁4質量%。又,將基材部21的氣孔率設為12%、表面粗糙度Ra設為6μm。此外,於第1膜22a、第2膜22b中,將第1膜22a的厚度設為165μm、第2膜22b的厚度設為220μm,氣孔率則與實施例1相同。 In Example 8, the chemical composition of the base material portion 21 was set to 66% by mass of lanthanum carbide, 30% by mass of lanthanum nitride, and 4% by mass of alumina. Moreover, the porosity of the base material portion 21 was 12%, and the surface roughness Ra was set to 6 μm . Further, in the first film 22a and the second film 22b, the thickness of the first film 22a is 165 μm , and the thickness of the second film 22b is 220 μm , and the porosity is the same as in the first embodiment.

(實施例9) (Example 9)

在實施例9中,將基材部21的化學組成設為碳化矽70質量%、氮化矽30質量%,而不含氧化鋁者。又,將基材部21的氣孔率設為12%、表面粗糙度Ra設為2μm。此外,於第1膜22a、第2膜22b中,將第1膜22a的氣孔率設為15%,除此以外的厚度及第2膜22b的氣孔率則與實施例1相同。 In the ninth embodiment, the chemical composition of the base material portion 21 is 70% by mass of tantalum carbide and 30% by mass of tantalum nitride, and alumina is not contained. Further, the porosity of the base portion 21 was 12%, and the surface roughness Ra was 2 μm . In addition, in the first film 22a and the second film 22b, the porosity of the first film 22a is set to 15%, and the other thickness and the porosity of the second film 22b are the same as those in the first embodiment.

(實施例10) (Embodiment 10)

在實施例10中,將基材部21的化學組成設為碳化矽83質量%、氮化矽15質量%,氧化鋁2質量%。又,將基材部21的氣孔率設為38%、表面粗糙度Ra設為6μm。又,於第1膜22a中,將厚度設為55μm、氣孔率設為10%, 於第2膜22b中,將厚度設為40μm、氣孔率設為25%。 In Example 10, the chemical composition of the base material portion 21 was 83% by mass of lanthanum carbide, 15% by mass of lanthanum nitride, and 2% by mass of alumina. Moreover, the porosity of the base material portion 21 was 38%, and the surface roughness Ra was set to 6 μm . Further, in the first film 22a, the thickness was 55 μm and the porosity was 10%, and in the second film 22b, the thickness was 40 μm and the porosity was 25%.

(實施例11) (Example 11)

在實施例11中,將基材部21的化學組成設為碳化矽45質量%、氮化矽55質量%,而不含氧化鋁。又,將基材部21的氣孔率設為4%、表面粗糙度Ra設為6μm。又,於第1膜22a中,將厚度設為150μm、氣孔率設為25%,於第2膜22b中,將厚度設為270μm、氣孔率設為10%。 In the eleventh embodiment, the chemical composition of the base portion 21 is set to 45 mass% of niobium carbide and 55 mass% of niobium nitride, and alumina is not contained. Moreover, the porosity of the base material portion 21 was 4%, and the surface roughness Ra was set to 6 μm . In the first film 22a, the thickness is 150 μm and the porosity is 25%. In the second film 22b, the thickness is 270 μm and the porosity is 10%.

(實施例12) (Embodiment 12)

在實施例12中,將基材部21的化學組成設為碳化矽71質量%、氮化矽29質量%,而不含氧化鋁。又,將基材部21的氣孔率設為6%、表面粗糙度Ra設為6μm。此外,於第1膜22a、第2膜22b中,將第1膜22a的厚度設為40μm、第2膜22b的厚度設55μm,氣孔率則與實施例1相同。 In Example 12, the chemical composition of the base material portion 21 was 71% by mass of niobium carbide and 29% by mass of niobium nitride, and no alumina was contained. Moreover, the porosity of the base material portion 21 was 6%, and the surface roughness Ra was set to 6 μm . Further, in the first film 22a and the second film 22b, the thickness of the first film 22a is 40 μm , and the thickness of the second film 22b is 55 μm , and the porosity is the same as in the first embodiment.

(實施例13) (Example 13)

在實施例13中,將基材部21的化學組成設為碳化矽57質量%、氮化矽30質量%、氧化鋁13質量%。又,將基材部21的氣孔率設為15%、表面粗糙度Ra設為14μm。此外,於第1膜22a、第2膜22b中,將第1膜22a的厚度設為210μm、第2膜22b的厚度設300μm,氣孔率則與實施例1相同。 In Example 13, the chemical composition of the base material portion 21 was 57% by mass of lanthanum carbide, 30% by mass of lanthanum nitride, and 13% by mass of alumina. Moreover, the porosity of the base material portion 21 was set to 15%, and the surface roughness Ra was set to 14 μm . Further, in the first film 22a and the second film 22b, the thickness of the first film 22a is 210 μm , and the thickness of the second film 22b is 300 μm , and the porosity is the same as in the first embodiment.

(實施例14) (Example 14)

在實施例14中,將基材部21的化學組成設為碳化矽100質量%,而不含氮化矽與氧化鋁。又,將基材部21的 氣孔率設為31%、表面粗糙度Ra設為5μm。此外,第1膜22a、第2膜22b的厚度以及氣孔率則與實施例1相同。 In Example 14, the chemical composition of the base material portion 21 was set to 100% by mass of niobium carbide, and no tantalum nitride and aluminum oxide were contained. Moreover, the porosity of the base material portion 21 was 31%, and the surface roughness Ra was set to 5 μm . The thickness and the porosity of the first film 22a and the second film 22b are the same as those in the first embodiment.

(實施例15) (Example 15)

在實施例15中,將基材部21的化學組成設為氮化矽100質量%,而不含碳化矽與氧化鋁。又,將基材部21的氣孔率設為4%、表面粗糙度Ra設為6μm。此外,於第1膜22a、第2膜22b中,將第2膜22b的氣孔率設為10%,除此以外的厚度及第1膜22a的氣孔率則與實施例1相同。 In Example 15, the chemical composition of the base material portion 21 was set to 100% by mass of tantalum nitride, and ruthenium carbide and alumina were not contained. Moreover, the porosity of the base material portion 21 was 4%, and the surface roughness Ra was set to 6 μm . In addition, in the first film 22a and the second film 22b, the porosity of the second film 22b is set to 10%, and the other thickness and the porosity of the first film 22a are the same as those in the first embodiment.

如表1所示,於實施例1至15之燒製輔助具中,係耐熱衝擊性比較高,並且至膜部22產生剝離為止的次數也比較多。又,膜部22與被燒製物30的反應也未觀察到。 As shown in Table 1, in the firing aids of Examples 1 to 15, the thermal shock resistance was relatively high, and the number of times until the film portion 22 was peeled off was also relatively large. Further, the reaction between the film portion 22 and the object 30 to be fired was not observed.

(比較例1) (Comparative Example 1)

另一方面,在比較例1中,將基材部21的化學組成設為氧化鋁100質量%,而不含矽,具體而言是不含碳化矽及氮化矽。又,將基材部21的氣孔率設為12%、表面粗糙度Ra設為29μm。此外,第1膜22a、第2膜22b的厚度及氣孔率則與實施例1設為相同。於藉由比較例1所得的燒製輔助具1中,如表1所示,耐熱衝擊性降低,並且至剝離產生為止的次數也減少。 On the other hand, in Comparative Example 1, the chemical composition of the base portion 21 was set to 100% by mass of alumina, and ruthenium was not contained, specifically, ruthenium carbide and tantalum nitride were not contained. Moreover, the porosity of the base material portion 21 was 12%, and the surface roughness Ra was 29 μm . The thickness and porosity of the first film 22a and the second film 22b are the same as those in the first embodiment. In the baking aid 1 obtained in Comparative Example 1, as shown in Table 1, the thermal shock resistance was lowered, and the number of times until peeling occurred was also reduced.

(比較例2) (Comparative Example 2)

在比較例2中,將基材部21的化學組成設為碳化矽64質量%、氮化矽30質量%、氧化鋁6質量%。又,將基材部21的氣孔率設為12%、表面粗糙度Ra設為2μm。又, 膜部22不具備第2膜22b,僅有第1膜22a。此外,將第1膜22a的厚度設為90μm、氣孔率設為10%。於藉由比較例2所得的燒製輔助具1中,由於不具備第2膜22b,故觀察到膜部22與被燒製物30的反應。 In Comparative Example 2, the chemical composition of the base material portion 21 was set to 64% by mass of lanthanum carbide, 30% by mass of lanthanum nitride, and 6% by mass of alumina. Further, the porosity of the base portion 21 was 12%, and the surface roughness Ra was 2 μm . Further, the film portion 22 does not have the second film 22b, and only the first film 22a. Further, the thickness of the first film 22a was set to 90 μm , and the porosity was set to 10%. In the baking aid 1 obtained in Comparative Example 2, since the second film 22b is not provided, the reaction between the film portion 22 and the object 30 to be fired is observed.

(比較例3) (Comparative Example 3)

在比較例3中,將基材部21的化學組成設為碳化矽59質量%、氮化矽32質量%、氧化鋁9質量%。又,將基材部21的氣孔率設為12%、表面粗糙度Ra設為2μm。又,膜部22不具備第1膜22a,僅有第2膜22b。此外,將第2膜22b的厚度設為150μm、氣孔率設為25%。於藉由比較例3所得的燒製輔助具1中,由於不具備第1膜22a,故於膜部22與基材部21之間立刻產生剝離。 In Comparative Example 3, the chemical composition of the base material portion 21 was 59% by mass of lanthanum carbide, 32% by mass of lanthanum nitride, and 9% by mass of alumina. Further, the porosity of the base portion 21 was 12%, and the surface roughness Ra was 2 μm . Further, the film portion 22 does not include the first film 22a, and only the second film 22b. Further, the thickness of the second film 22b was set to 150 μm , and the porosity was set to 25%. In the firing aid 1 obtained in Comparative Example 3, since the first film 22a is not provided, peeling occurs immediately between the film portion 22 and the base portion 21.

如上所述,本實施形態之燒製輔助具1係具備基材部21、2層以上的膜部22、以及邊界部23。基材部21係具有載置被燒製物30的載置面21a,並且至少含有矽。2層以上的膜部22係覆蓋基材部21的載置面21a且含有氧化物系陶瓷。邊界部23係形成於基材部21與膜部22之間且含有包含矽的複合氧化物。 As described above, the baking aid 1 of the present embodiment includes the base portion 21, the film portion 22 of two or more layers, and the boundary portion 23. The base material portion 21 has a mounting surface 21a on which the object 30 to be placed is placed, and contains at least ruthenium. The film portion 22 of two or more layers covers the mounting surface 21a of the base material portion 21 and contains an oxide-based ceramic. The boundary portion 23 is formed between the base portion 21 and the film portion 22 and contains a composite oxide containing ruthenium.

藉此,於燒製輔助具1中具備耐熱衝擊性高的基材部21的同時,可提升基材部21與膜部22之密合性,並可抑制膜部22對基材部21之剝離。 In this way, the base material 21 having high thermal shock resistance is provided in the baking aid 1 , and the adhesion between the base portion 21 and the film portion 22 can be improved, and the film portion 22 can be suppressed from being applied to the base portion 21 . Stripped.

此外,在上述中,是將膜部22設為地下層的第1膜22a以及表面層的第2膜22b之2層,惟並不限定於此,亦可為3層以上。 In the above, the film portion 22 is formed of two layers of the first film 22a of the underground layer and the second film 22b of the surface layer. However, the film portion 22 is not limited thereto, and may be three or more layers.

又,在上述中,係藉由反應燒結而形成基材部21,惟並不限定於此,亦可以例如常壓燒結或加壓燒結等其他的燒結方法來形成。 Moreover, in the above, the base portion 21 is formed by reaction sintering, but the present invention is not limited thereto, and may be formed by another sintering method such as normal pressure sintering or pressure sintering.

又,在第1圖中顯示一個燒製輔助具1,惟並不限定於此,亦可以重疊複數段的燒製輔助具1,將載置於複數段的燒製輔助具1之多數的被燒製物30一次進行燒製。 Further, in the first drawing, one firing aid 1 is shown, but the present invention is not limited thereto, and a plurality of firing aids 1 may be stacked, and a plurality of firing aids 1 placed in a plurality of stages may be placed. The fired product 30 is fired once.

如上所述,本實施形態係提供較以往製品具有更高之耐熱衝擊性,且完全無與所燒製的電子零件之反應之燒製輔助具及燒製輔助具的製造方法。 As described above, the present embodiment provides a method for producing a firing aid and a firing aid which have higher thermal shock resistance than conventional products and which are completely free from reaction with the fired electronic components.

進一步的效果及變形例係可依本發明領域之業者輕易導出。因此,本發明更廣範的態樣並不限定於如以上所表示與記敘的特定之詳細及代表性的實施形態。所以,在不超出由附錄的申請專利範圍及其均等物所定義之所有發明的概念之精神或範圍內,均可進行各種的變更。 Further effects and modifications are readily available to those skilled in the art of the present invention. Therefore, the invention in its broader aspects is not intended to Therefore, various modifications may be made without departing from the spirit and scope of the inventions of the inventions.

1‧‧‧燒製輔助具 1‧‧‧Burning aids

20‧‧‧乘載板 20‧‧‧Travel board

21‧‧‧基材部 21‧‧‧Parts

21a‧‧‧(基材部的)載置面 21a‧‧‧(Material part) mounting surface

22‧‧‧膜部 22‧‧‧Mouth Department

22a‧‧‧第1膜 22a‧‧‧1st film

22b‧‧‧第2膜 22b‧‧‧2nd film

23‧‧‧邊界部 23‧‧‧Borders Department

30‧‧‧被燒製物 30‧‧‧Furned goods

Claims (10)

一種燒製輔助具,係具備:具有載置被燒製物的載置面,且至少含有矽之基材部;覆蓋前述基材部的前述載置面,且含有氧化物系陶瓷之2層以上的膜部;以及形成於前述基材部與前述膜部之間且含有包含矽的複合氧化物之邊界部。 A baking aid includes: a substrate having a mounting surface on which the object to be fired is placed, and at least a base portion; the mounting surface covering the base portion and the oxide ceramic layer The film portion described above; and a boundary portion formed between the base material portion and the film portion and containing a composite oxide containing ruthenium. 如申請專利範圍第1項所述之燒製輔助具,其中,前述基材部的氣孔率在5至35%的範圍內。 The baking aid according to claim 1, wherein the base material portion has a porosity of 5 to 35%. 如申請專利範圍第1項或第2項所述之燒製輔助具,其中,前述膜部為,2層以上的前述膜部中構成與前述基材部側面對之層的陶瓷之線膨脹係數在前述基材部的線膨脹係數之0.5至2倍的範圍內。 The firing aid according to the first or second aspect of the invention, wherein the film portion is a linear expansion coefficient of a ceramic constituting a layer facing the side surface of the base portion of the film portion of two or more layers. It is in the range of 0.5 to 2 times the linear expansion coefficient of the base material portion. 如申請專利範圍第1項或第2項所述之燒製輔助具,其中,前述基材部係含有碳化矽及氮化矽的至少任一者。 The baking aid according to the first or second aspect of the invention, wherein the base material portion contains at least one of tantalum carbide and tantalum nitride. 如申請專利範圍第1項或第2項所述之燒製輔助具,其中,2層以上的前述膜部中除了面對前述基材部側之層以外的層,係含有氧化鋯。 In the above-mentioned film portion of the two or more layers, the layer other than the layer on the side of the base material portion contains zirconia. 如申請專利範圍第1項或第2項所述之燒製輔助具,其中,2層以上的前述膜部中,面對前述基材部側之層,係含有氧化鋁、氧化矽及莫來石中之1種以上。 In the above-mentioned film portion of the two or more layers, the layer facing the base material portion contains alumina, cerium oxide, and molybdenum, in the firing aid according to the first or second aspect of the invention. More than one type of stone. 如申請專利範圍第1項或第2項所述之燒製輔助具,其中,前述邊界部的複合氧化物更含有鋁。 The firing aid according to the first or second aspect of the invention, wherein the composite oxide of the boundary portion further contains aluminum. 如申請專利範圍第4項所述之燒製輔助具,其中,前述基材部係含有前述碳化矽45至75質量%、以及前述氮化矽20至50質量%。 The baking aid according to claim 4, wherein the base material portion contains 45 to 75 mass% of the niobium carbide and 20 to 50 mass% of the niobium nitride. 如申請專利範圍第1項或第2項所述之燒製輔助具,其中,前述膜部的厚度在80至530μm的範範內。 The firing aid according to the first or second aspect of the invention, wherein the thickness of the film portion is within a range of 80 to 530 μm. 一種燒製輔助具的製造方法,係包括下列步驟:形成具有載置被燒製物的載置面且至少含有矽之基材部之步驟;以及將前述基材部的前述載置面以含有氧化物系陶瓷之2層以上的膜部覆蓋,於前述基材部與前述膜部之間形成含有包含矽的複合氧化物之邊界部之步驟。 A method for producing a baking aid includes the steps of: forming a substrate having a mounting surface on which a workpiece is placed and containing at least a crucible; and mounting the surface of the substrate portion The film portion covering two or more layers of the oxide-based ceramic covers a step of forming a boundary portion containing a composite oxide containing ruthenium between the base material portion and the film portion.
TW104120699A 2014-06-27 2015-06-26 Calcination jig and method for producing the same TWI609162B (en)

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