TW201607768A - Method for fabricating a flexible glass thin film structure - Google Patents
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本發明係有關於一種玻璃膜結構的製程方法,特別係關於一種可撓式玻璃膜結構的製程方法,其使用化學氣相沈積製備有機薄膜/無機薄膜/有機薄膜以形成三明治夾層薄膜,具有相當良好之透光性、散熱能力、疏水性與摩氏硬度等特性。 The present invention relates to a method for fabricating a glass film structure, and more particularly to a process for fabricating a flexible glass film structure using chemical vapor deposition to prepare an organic film/inorganic film/organic film to form a sandwich film having a comparable Good light transmission, heat dissipation, hydrophobicity and Mohs hardness.
近年來,各類電子產品,如行動通訊裝置、平板電腦或筆記型電腦等,所具有之功能愈加豐富。例如,觸控面板(Touch panel)是利用接收來接觸頭輸入訊號來感應式顯示裝置的一種面板。當接觸了螢幕上的圖形按鈕時,螢幕上的觸覺反饋系統可根據預先編程的程式驅動各種連結裝置,可用以取代機械式的按鈕面板,並藉由顯示畫面製造出生動的影音效果。觸控螢幕的用途非常廣泛,從常見的提款機、到工業用的觸控電腦。因為觸控螢幕具有親切且生動的人機介面,愈來愈多智慧型顯示裝置多採用了觸控螢幕。 In recent years, various electronic products, such as mobile communication devices, tablets, or notebook computers, have become more and more abundant. For example, a touch panel is a type of panel that uses an inductive display device that receives a contact input signal. When touched on the graphic button on the screen, the on-screen tactile feedback system can drive various linkage devices according to a pre-programmed program, which can be used to replace the mechanical button panel and create a live sound and video effect through the display screen. Touch screens are used in a wide range of applications, from common cash machines to industrial touch computers. Because touch screens have an intimate and vivid human-machine interface, more and more smart display devices use touch screens.
目前的觸控電子產品的功能越來越強大,其裝置所累積之熱量也逐漸升高。典型的觸控電子產品,通常是採用玻璃或塑膠基板作為外層封裝結構,這兩種基板通常無法同時達到良好的透光性、疏水性與摩氏硬度等特性。過去的作法是,在玻璃或塑膠基板表面在進行一層玻璃膜的 披覆。然而披覆玻璃膜的玻璃或塑膠基板作為外層封裝結構,造成內部的散熱能力降低,其裝置內所累積之熱量無法快速移出。此外,為了增加玻璃膜硬度,通常在玻璃膜中加入二氧化矽(SiO2)。但加入二氧化矽材料會使玻璃膜表面具有親水性,隨著時間增長,二氧化矽材料會產生劣化現象。 The current touch electronic products are becoming more and more powerful, and the heat accumulated by the devices is gradually increasing. Typical touch electronic products usually use a glass or plastic substrate as the outer package structure. These two substrates usually cannot achieve good light transmittance, hydrophobicity and Mohs hardness at the same time. In the past, a glass film was applied to the surface of a glass or plastic substrate. However, the glass or plastic substrate coated with the glass film serves as an outer package structure, which causes the internal heat dissipation capability to be lowered, and the heat accumulated in the device cannot be quickly removed. Further, in order to increase the hardness of the glass film, cerium oxide (SiO 2 ) is usually added to the glass film. However, the addition of the cerium oxide material makes the surface of the glass film hydrophilic, and the cerium oxide material deteriorates with time.
此外,現階段作為玻璃膜的有機薄膜通常是含碳氫氟的矽化學物薄膜。該含碳氫氟的矽化學物薄膜使用四乙氧基矽烷(tetraethoxysilane,簡稱TEOS)與矽烷(Silane)為先驅物(precursor)材料,於化學氣相沈積(chemical vapor deposition,簡稱CVD)製程中另添加碳氟(CnF2n+2)或矽氟(SinF2n+2)氣體做為氟的來源沈積。然而,結合該含碳氫氟的有機矽化學物薄膜與含二氧化矽(SiO2)的玻璃膜結構的製程方法並未被揭示。 Further, the organic film which is a glass film at this stage is usually a film of a ruthenium-containing chemical containing hydrogen fluoride. The hydrofluoride-containing ruthenium chemical film uses tetraethoxysilane (TEOS) and silane (Silane) as a precursor material in a chemical vapor deposition (CVD) process. An additional fluorocarbon (C n F 2n+2 ) or krypton fluoride (Si n F 2n+2 ) gas is deposited as a source of fluorine. However, a process for the combination of the hydrofluoride-containing organic germanium chemical film and the ceria-containing (SiO 2 )-containing glass film structure has not been disclosed.
有鑑於此,有必要提出一種可以製備出可撓式玻璃膜結構的製程方法,以解決傳統電子產品所採用之玻璃或塑膠基板之上述問題。 In view of the above, it is necessary to propose a process method for fabricating a flexible glass film structure to solve the above problems of the glass or plastic substrate used in conventional electronic products.
本發明之主要目的在於提出一種可撓式玻璃膜結構的製程方法,透過多孔有機矽石玻璃薄膜之堆疊架構增加基板之散熱效能與透光度,並以二氧化矽薄膜夾層方式提高該可撓式薄膜之摩氏硬度。 The main object of the present invention is to provide a method for manufacturing a flexible glass film structure, which increases the heat dissipation efficiency and transmittance of the substrate through the stacking structure of the porous organic vermiculite glass film, and improves the flexibility by sandwiching the ruthenium dioxide film. The Mohs hardness of the film.
為達上述之主要目的,本發明提出一種可撓式玻璃膜結構的製程方法,其主要包含步驟:提供一可撓式基板;以及沈積一三明治夾層薄膜,其堆疊於該可撓式基板之上,並具有多孔有機矽石玻璃薄膜之堆疊架構,其中該三明治夾層薄膜係藉由一種化學氣相沈積(Chemical Vapor Deposition,CVD)製程調整一有機矽前驅物所沈積。 In order to achieve the above-mentioned main object, the present invention provides a method for fabricating a flexible glass film structure, which mainly comprises the steps of: providing a flexible substrate; and depositing a sandwich interlayer film stacked on the flexible substrate And having a stacked structure of a porous organic vermiculite glass film, wherein the sandwich interlayer film is subjected to a chemical vapor deposition (Chemical Vapor) The Deposition, CVD) process adjusts the deposition of an organic germanium precursor.
其中沈積該三明治夾層薄膜之步驟包含下列步驟:沈積一第一有機薄膜,用以增強該三明治夾層薄膜與該可撓式基板之間的附著力;沈積一無機薄膜,堆疊於該第一有機薄膜之上,用以增強該三明治夾層薄膜之硬度;以及沈積一第二有機薄膜,堆疊於該無機薄膜之上,用以增強該三明治夾層薄膜之表面之疏水性;其中該第一有機薄膜與該第二有機薄膜皆含有矽、氧、碳、氫、氟等元素。 The step of depositing the sandwich film comprises the steps of: depositing a first organic film to enhance adhesion between the sandwich film and the flexible substrate; depositing an inorganic film stacked on the first organic film Above, to enhance the hardness of the sandwich film; and depositing a second organic film stacked on the inorganic film to enhance the hydrophobicity of the surface of the sandwich film; wherein the first organic film and the The second organic film contains elements such as ruthenium, oxygen, carbon, hydrogen, and fluorine.
根據本發明之一特徵,所沈積的該第一有機薄膜與該第二有機薄膜係由氫氟矽氧烷化合物(SiaObCcHdFe)所構成,a、b、c、d、e分別表示各元素所佔原子百分比,其中a介於10%至30%,b介於10%至30%,c介於10%至30%,d介於10%至30%,e介於10%至30%,且a+b+c+d+e=1。 According to a feature of the invention, the deposited first organic film and the second organic film are composed of a hydrofluorofluorene oxide compound (Si a O b C c H d F e ), a, b, c, d, e respectively represent the atomic percentage of each element, where a is between 10% and 30%, b is between 10% and 30%, c is between 10% and 30%, and d is between 10% and 30%, e Between 10% and 30%, and a+b+c+d+e=1.
根據本發明之一特徵,所沈積的該第一有機薄膜之厚度係介於5nm至300nm之間;所沈積的該第二有機薄膜之厚度係介於5nm至300nm之間。 According to a feature of the invention, the deposited first organic film has a thickness between 5 nm and 300 nm; and the deposited second organic film has a thickness between 5 nm and 300 nm.
根據本發明之一特徵,該無機薄膜係由二氧化矽(SiO2)所構成,其薄膜厚度係介於10nm至500nm之間。 According to a feature of the invention, the inorganic film is composed of cerium oxide (SiO 2 ) having a film thickness of between 10 nm and 500 nm.
根據本發明之一特徵,該可撓式基板係聚乙烯對苯二甲酸酯(PET)、聚醯亞胺(PI)、聚氯乙烯(PVC)與碳酸酯(PC)之一材料所構成 According to one feature of the present invention, the flexible substrate is composed of a material of polyethylene terephthalate (PET), polyimine (PI), polyvinyl chloride (PVC) and carbonate (PC).
根據本發明之一特徵,該有機矽前驅物係為四甲基矽烷,化學式為Si(CH3)4。 According to one aspect of the present invention, the organic silicon-based precursor Silicon tetramethylammonium chloride, of the formula Si (CH 3) 4.
根據本發明之一特徵,該化學氣相沈積製程係選自電漿增強式化學氣相沈積(PECVD)、低壓化學氣相沉積(LPCVD)、電子迴旋共振化 學氣相沉積(ECRCVD)與電感耦合電漿化學氣相沈積(ICPCVD)製程之一。 According to a feature of the invention, the chemical vapor deposition process is selected from the group consisting of plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), and electron cyclotron resonance. One of the processes of vapor deposition (ECRCVD) and inductively coupled plasma chemical vapor deposition (ICPCVD).
綜上所述,本發明之一種可撓式玻璃膜結構的製程方法具有以下之功效: In summary, the manufacturing method of the flexible glass film structure of the present invention has the following effects:
1.可以沈積出多孔有機矽石玻璃薄膜之堆疊架構,以呈現良好之透光性與疏水性。 1. A stacking structure of a porous organic vermiculite glass film can be deposited to exhibit good light transmittance and hydrophobicity.
2.透過沈積二氧化矽薄膜之夾層方式,提高可撓式薄膜之摩氏硬度與散熱能力。 2. Improve the Mohs hardness and heat dissipation capability of the flexible film by depositing the interlayer of the ruthenium dioxide film.
100‧‧‧可撓式玻璃膜結構 100‧‧‧Flexible glass membrane structure
110‧‧‧可撓式基板 110‧‧‧Flexible substrate
120‧‧‧三明治夾層薄膜 120‧‧‧ Sandwich laminated film
121‧‧‧第一有機薄膜 121‧‧‧First organic film
122‧‧‧無機薄膜 122‧‧‧Inorganic film
123‧‧‧第二有機薄膜 123‧‧‧Second organic film
200‧‧‧可撓式玻璃膜結構的製程流程 200‧‧‧ Process flow of flexible glass membrane structure
210‧‧‧提供一可撓式基板 210‧‧‧ Provide a flexible substrate
220‧‧‧沈積一三明治夾層薄膜 220‧‧‧Deposition of a sandwich film
310‧‧‧沈積一第一有機薄膜 310‧‧‧Deposition of a first organic film
320‧‧‧沈積一無機薄膜 320‧‧‧Deposition of an inorganic film
330‧‧‧沈積一第二有機薄膜 330‧‧‧Deposition of a second organic film
第1圖說明本發明中可撓式玻璃膜結構之一實施例。 Fig. 1 is a view showing an embodiment of a flexible glass film structure in the present invention.
第2圖說明本發明中可撓式玻璃膜結構的製程方法之一實施例。 Fig. 2 is a view showing an embodiment of a process for producing a flexible glass film structure in the present invention.
第3圖說明本發明中該三明治夾層薄膜之製程方法之一實施例。 Fig. 3 is a view showing an embodiment of the process for producing the sandwich interlayer film of the present invention.
雖然本發明可表現為不同形式之實施例,但附圖所示者及於下文中說明者係為本發明可之較佳實施例,並請瞭解本文所揭示者係考量為本發明之一範例,且並非意圖用以將本發明限制於圖示及/或所描述之特定實施例中。 While the invention may be embodied in various forms, the embodiments illustrated in the drawings It is not intended to limit the invention to the particular embodiments illustrated and/or described.
現請參考第1圖,係為本發明之可撓式玻璃膜結構100之一實施例。該可撓式玻璃膜結構100,其主要包含:一可撓式基板110與一三明治夾層薄膜120。 Referring now to Figure 1, an embodiment of a flexible glass film structure 100 of the present invention is shown. The flexible glass film structure 100 mainly comprises: a flexible substrate 110 and a sandwich interlayer film 120.
在實施例中,該可撓式基板110係由具有可撓特性之基板,例如不鏽鋼金屬或透明的塑膠軟性基板。較佳地,該可撓式基板110係由為透明的軟性基板,該透明的軟性基板版為下列選自下列材質之一,如聚乙烯對苯二甲酸酯(Polyethylene terephthalate,PET)、聚醯亞胺(polyimides,PI)、聚氯乙烯(Polyvinylchloride,PVC),碳酸酯(Polycarbonate,PC)等。 In an embodiment, the flexible substrate 110 is comprised of a substrate having flexible properties, such as a stainless steel metal or a transparent plastic flexible substrate. Preferably, the flexible substrate 110 is made of a transparent flexible substrate, and the transparent flexible substrate is one of the following materials selected from the group consisting of polyethylene terephthalate (PET) and poly. Polyimides (PI), polyvinyl chloride (PVC), carbonate (Polycarbonate, PC), and the like.
其中該三明治夾層薄膜120係沈積堆疊於該可撓式基板110之上,且包含一第一有機薄膜121,一無機薄膜122,一第二有機薄膜123。該第一有機薄膜121,用以增強該三明治夾層薄膜120與該可撓式基板110之間的附著力;該無機薄膜122,堆疊於該第一有機薄膜121之上,用以增強該三明治夾層薄膜120之硬度;以及該第二有機薄膜123,堆疊於該無機薄膜122之上,用以增強該三明治夾層薄膜120之表面之疏水性。其中該第一有機薄膜121與該第二有機薄膜123皆含有矽、氧、碳、氫、氟等元素。 The sandwich interlayer film 120 is deposited on the flexible substrate 110 and includes a first organic film 121, an inorganic film 122, and a second organic film 123. The first organic film 121 is used to enhance the adhesion between the sandwich film 120 and the flexible substrate 110. The inorganic film 122 is stacked on the first organic film 121 to enhance the sandwich layer. The hardness of the film 120; and the second organic film 123 are stacked on the inorganic film 122 to enhance the hydrophobicity of the surface of the sandwich film 120. The first organic film 121 and the second organic film 123 both contain elements such as germanium, oxygen, carbon, hydrogen, fluorine and the like.
配合第1圖,並參考第2圖,其說明本發明中可撓式玻璃膜結構的製程方法之一實施例。參考第3圖,其說明本發明中該三明治夾層薄膜之製程方法之一實施例。 With reference to Fig. 1 and with reference to Fig. 2, an embodiment of a process for fabricating a flexible glass film structure of the present invention will be described. Referring to Fig. 3, there is illustrated an embodiment of the process for the sandwich interlayer film of the present invention.
在該可撓式玻璃膜結構的製程流程200中,包含下列步驟:步驟210:提供一可撓式基板;以及步驟220:沈積一三明治夾層薄膜。 In the process flow 200 of the flexible glass film structure, the following steps are included: Step 210: providing a flexible substrate; and Step 220: depositing a sandwich interlayer film.
在步驟210中,將該可撓式基板110置入一電漿生成反應系統中。該電漿生成反應系統可以是任何可以提供該可撓式基板110承載之真空鍍膜系統,較佳係使用可以化學氣相沈積的製程系統,例如電漿增強 式化學氣相沈積(plasma enhanced chemical vapor deposition,簡稱PECVD)、低壓化學氣相沉積(Low-pressure chemical vapor deposition,簡稱LPCVD)、電子迴旋共振化學氣相沉積(electron cyclotron resonance chemical vapor deposition,簡稱ECRCVD)或電感耦合電漿(Inductive Coupled Plasma chemical vapor deposition,簡稱ICPCVD)化學氣相沈積等。 In step 210, the flexible substrate 110 is placed in a plasma generation reaction system. The plasma generation reaction system may be any vacuum coating system capable of providing the flexible substrate 110, preferably using a chemical vapor deposition process system, such as plasma enhancement. Plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), electron cyclotron resonance chemical vapor deposition (ECRCVD) Or Inductive Coupled Plasma Chemical Vapor Deposition (ICPCVD) chemical vapor deposition.
在步驟220中,沈積該三明治夾層薄膜之步驟係藉由一種化學氣相沈積(Chemical Vapor Deposition,CVD)製程調整一有機矽前驅物所沈積。 In step 220, the step of depositing the sandwich film is performed by a chemical vapor deposition (CVD) process to adjust the deposition of an organic germanium precursor.
其中,化學氣相沈積製程運用於本發明之製程如下所述:將氣體或氣相源材料引進反應腔體內,當源材料擴散穿過邊界層並接觸基板表面,以吸附方式披覆於基板表面上。接著,吸附的源材料在基板表面上移動,並在基板表面上開始化學反應。最後,固體產物在基板表面上形成晶核,且晶核生長成島狀物,島狀物再合併成連續薄膜。 Wherein, the chemical vapor deposition process is applied to the process of the present invention as follows: a gas or gas phase source material is introduced into the reaction chamber, and the source material diffuses through the boundary layer and contacts the surface of the substrate to be coated on the substrate surface in an adsorption manner. on. The adsorbed source material then moves over the surface of the substrate and begins a chemical reaction on the surface of the substrate. Finally, the solid product forms crystal nuclei on the surface of the substrate, and the nuclei grow into islands, which are then combined into a continuous film.
本發明之化學氣相沈積系統係以射頻功率與反應系統之溫度來條調整製程的參數。在一較佳實施例中,化學氣相沈積系統,於製程中,其射頻功率係介在10W至2000W之間,且置入基板時,電漿生成反應系統之溫度係介於30℃至300℃之間。且該化學氣相沈積製程係電感耦合電漿(Inductive Coupled Plasma,ICP)化學氣相沈積製程。 The chemical vapor deposition system of the present invention adjusts the parameters of the process by the RF power and the temperature of the reaction system. In a preferred embodiment, the chemical vapor deposition system has a radio frequency power between 10 W and 2000 W in the process, and the temperature of the plasma generation reaction system is between 30 ° C and 300 ° C when the substrate is placed. between. The chemical vapor deposition process is an Inductive Coupled Plasma (ICP) chemical vapor deposition process.
在步驟220中,沈積該三明治夾層薄膜步驟中更包含下列的製程步驟:步驟310:沈積一第一有機薄膜;步驟320:沈積一無機薄膜;以及 步驟330:沈積一第二有機薄膜。 In step 220, the step of depositing the sandwich interlayer film further comprises the following process steps: step 310: depositing a first organic film; step 320: depositing an inorganic film; Step 330: depositing a second organic film.
在步驟310中,所沈積的該第一有機薄膜121係由氫氟矽氧烷化合物所構成(SiaObCcHdFe),a、b、c、d、e分別表示各元素所佔原子百分比。其中,a介於10%至30%,b介於10%至30%,c介於10%至30%,d介於10%至30%,e介於10%至30%,且a+b+c+d+e=1。該第一有機薄膜121係用以增強該三明治夾層薄膜120與該可撓式基板110之間的附著力。較佳地,a介於10%至30%,b介於10%至20%,c介於10%至20%,d介於15%至20%,e介於15%至25%,且a+b+c+d+e=1。亦即是,該第一有機薄膜121係為富碳、氫、氟等元素之材料,可形成多孔有機矽石玻璃薄膜。 In step 310, the deposited first organic film 121 is composed of a hydrofluoromethoxy hydride compound (Si a O b C c H d F e ), and a, b, c, d, and e respectively represent each element. The atomic percentage. Where a is between 10% and 30%, b is between 10% and 30%, c is between 10% and 30%, d is between 10% and 30%, and e is between 10% and 30%, and a+ b+c+d+e=1. The first organic film 121 is used to enhance the adhesion between the sandwich film 120 and the flexible substrate 110. Preferably, a is between 10% and 30%, b is between 10% and 20%, c is between 10% and 20%, d is between 15% and 20%, and e is between 15% and 25%, and a+b+c+d+e=1. That is, the first organic thin film 121 is a material rich in elements such as carbon, hydrogen, fluorine, etc., and can form a porous organic vermiculite glass film.
在步驟320中,所沈積的該無機薄膜122係由二氧化矽(SiO2)或氮氧化矽(SiON)所構成,其厚度介於10nm至500nm之薄膜,具有相當良好之硬度特性。較佳地,該該無機薄膜122係由二氧化矽(SiO2)所構成,在常溫常壓下,二氧化矽構成之該第一有機薄膜121為固態,且薄膜構成鍵節(Si-O)的鍵能相當高,具有相當良好之堅韌特性,故該第一有機薄膜121可提昇該三明治夾層薄膜120之摩氏硬度,且該三明治夾層薄膜120之摩氏硬度可達到8H。較佳地,該無機薄膜122之厚度介於20nm至50nm之間,且該三明治夾層薄膜120之摩氏硬度可達到9H。硬度的增加可提高該可撓式玻璃膜結構100的防刮和耐磨能力,該可撓式玻璃膜結構100的表面具有9H的硬度,比普通的聚乙烯對苯二甲酸酯(PET)基板薄膜強三倍。即使是尖銳的物體,如鑰匙和刀具等都不會劃傷該可撓式玻璃膜結構100之表面。 In step 320, the deposited inorganic thin film 122 is composed of cerium oxide (SiO 2 ) or cerium oxynitride (SiON), and has a thickness of 10 nm to 500 nm, and has quite good hardness characteristics. Preferably, the inorganic thin film 122 is composed of cerium oxide (SiO 2 ). The first organic thin film 121 composed of cerium oxide is solid at normal temperature and pressure, and the thin film constitutes a bond (Si-O). The bond energy of the sandwich film 120 can be increased by a high hardness and has a relatively good toughness, so that the sandwich film 120 can have a Mohs hardness of 8H. Preferably, the thickness of the inorganic thin film 122 is between 20 nm and 50 nm, and the sandwich interlayer film 120 has a Mohs hardness of 9H. The increase in hardness can improve the scratch and abrasion resistance of the flexible glass film structure 100. The surface of the flexible glass film structure 100 has a hardness of 9H, which is higher than ordinary polyethylene terephthalate (PET). The substrate film is three times stronger. Even sharp objects such as keys and knives do not scratch the surface of the flexible glass film structure 100.
在步驟330中,所沈積的該第二有機薄膜123係由氫氟矽氧烷化合物所構成(SiaObCcHdFe),a、b、c、d、e分別表示各元素所佔原子百分比。其中,a介於10%至30%,b介於10%至30%,c介於10%至30%,d介於10%至30%,e介於10%至30%,且a+b+c+d+e=1。該第二有機薄膜123,堆疊於該無機薄膜122之上,用以增強該三明治夾層薄膜120之表面之疏水性。較佳地,a介於10%至30%,b介於10%至20%,c介於10%至20%,d介於15%至20%,e介於15%至25%,且a+b+c+d+e=1。亦即是,該第一有機薄膜121係為富碳、氫、氟等元素之材料,可形成多孔有機矽石玻璃薄膜。 The second organic-based thin film 123 in step 330, the deposited silicon hydrogen fluorine formed alumoxane compound (Si a O b C c H d F e), a, b, c, d, e represent each element The atomic percentage. Where a is between 10% and 30%, b is between 10% and 30%, c is between 10% and 30%, d is between 10% and 30%, and e is between 10% and 30%, and a+ b+c+d+e=1. The second organic film 123 is stacked on the inorganic film 122 to enhance the hydrophobicity of the surface of the sandwich film 120. Preferably, a is between 10% and 30%, b is between 10% and 20%, c is between 10% and 20%, d is between 15% and 20%, and e is between 15% and 25%, and a+b+c+d+e=1. That is, the first organic thin film 121 is a material rich in elements such as carbon, hydrogen, fluorine, etc., and can form a porous organic vermiculite glass film.
在步驟220中,沈積該三明治夾層薄膜120之各個製程,包含步驟310:沈積一第一有機薄膜;步驟320:沈積一無機薄膜。在步驟310、步驟320與步驟330中,沈積該三明治夾層薄膜120內部之各層薄膜之製程係透過一種化學氣相沈積製程成長。透過調整所採用之一有機矽前驅物之類型,該化學氣相沈積製程所沈積之該第一有機薄膜121與該第二有機薄膜123將形成多孔性結構,可用以改善該三明治夾層薄膜120之散熱性能與疏水性能。 In step 220, each process of depositing the sandwich film 120 is performed, including the step 310: depositing a first organic film; and step 320: depositing an inorganic film. In step 310, step 320 and step 330, the process of depositing the layers of the film in the sandwich film 120 is grown through a chemical vapor deposition process. By adjusting the type of the organic germanium precursor used, the first organic film 121 and the second organic film 123 deposited by the chemical vapor deposition process will form a porous structure, which can be used to improve the sandwich interlayer film 120. Thermal performance and hydrophobic properties.
在步驟220中,包含步驟310:沈積一第一有機薄膜;步驟320:沈積一無機薄膜;以及步驟330之前,先將一載氣通入電漿生成反應系統中,載氣用以承載該有機矽前驅物。 In step 220, the method includes the following steps: depositing a first organic thin film; and step 320: depositing an inorganic thin film; and before step 330, first passing a carrier gas into the plasma generating reaction system, and the carrier gas is used to carry the organic germanium. Precursor.
載氣可選自參與反應之還原性氣體與不參與反應之鈍性氣體之一。當載氣為參與反應之還原性氣體時,其係選自矽烷蒸氣、氧氣、空氣與氫氧之一;載氣為不參與反應之鈍性氣體時,則係選自氮氣、氦氣 與氬氣之一。 The carrier gas may be selected from one of a reducing gas participating in the reaction and a passive gas not participating in the reaction. When the carrier gas is a reducing gas participating in the reaction, it is selected from one of decane vapor, oxygen, air and hydrogen; when the carrier gas is a passive gas that does not participate in the reaction, it is selected from nitrogen and helium. One with argon.
在一實施例中,該有機矽前驅物係為甲基矽烷類,特別是四甲基矽烷,化學式為Si(CH3)4。在另一實施例中,該有機矽前驅物中含碳氟之官能基之化學通式為CxHyFz,x係介於5至20之間,z係介於3至15之間。更清楚的說,含碳氟之二氧化矽化合物先驅物係由R1Si(OR2)(OR3)(OR4)、Tridecafluoro-1,1,2,2-tetrahydrooctyl-triethoxysilane(TDF-TEOS)以及Trimethoxy(3,3,3-trifluoropropyl)silane所組成,其中R1係為氟化烷基、氟化烯基、氟化炔基與氟化芳香基之一,R2、R3與R4係為烷基、氟化烷基、氟化芳香基、氟化烯基與氟化炔基之一。 In one embodiment, the organic ruthenium precursor is a methyl decane, particularly tetramethyl decane, having the chemical formula Si(CH 3 ) 4 . In another embodiment, the functional group of the fluorocarbon-containing functional group in the organic ruthenium precursor has a chemical formula of CxHyFz, an x system of between 5 and 20, and a z series of between 3 and 15. More specifically, the fluorocarbon-containing cerium oxide compound precursor is composed of R 1 Si(OR 2 )(OR 3 )(OR 4 ), Tridecafluoro-1,1,2,2-tetrahydrooctyl-triethoxysilane (TDF-TEOS). And Trimethoxy(3,3,3-trifluoropropyl)silane, wherein R 1 is one of a fluorinated alkyl group, a fluorinated alkenyl group, a fluorinated alkynyl group and a fluorinated aromatic group, R 2 , R 3 and R 4 is one of an alkyl group, a fluorinated alkyl group, a fluorinated aromatic group, a fluorinated alkenyl group
在一較佳實施例,在步驟310、步驟320與步驟330中,於通入載氣時,該有機矽前驅物係以介於50℃至100℃間之溫度被加熱,使該有機矽前驅物具有更穩定之蒸氣壓,且載氣之氣體流量範圍係介於0.1sccm至10000sccm之間,可用以有效降低水氣穿透率,且使該有機矽前驅物之飽和蒸氣壓係介於30torr至80torr之間。通入載氣之時間係介於為0.5小時至1.5小時之間。 In a preferred embodiment, in step 310, step 320, and step 330, the organic germanium precursor is heated at a temperature between 50 ° C and 100 ° C when the carrier gas is introduced to cause the organic germanium precursor. The material has a more stable vapor pressure, and the gas flow rate of the carrier gas is between 0.1 sccm and 10000 sccm, which can be used to effectively reduce the water vapor permeability, and the saturated vapor pressure system of the organic germanium precursor is between 30 torr. Between 80torr. The time to pass the carrier gas is between 0.5 hours and 1.5 hours.
在完成步驟330之後,更可以進行一熱處理。該步驟係藉由熱處理轉化該有機矽前驅物為具有多孔有機矽石玻璃結構之該第一有機薄膜121與該第二有機薄膜123,並消除該第一有機薄膜121與該第二有機薄膜123之應力。 After the completion of step 330, a heat treatment can be further performed. In this step, the organic germanium precursor is converted into the first organic thin film 121 and the second organic thin film 123 having a porous organic vermiculite glass structure by heat treatment, and the first organic thin film 121 and the second organic thin film 123 are eliminated. The stress.
所述熱處理包含提高該有機矽前驅物之溫度或供給先驅物一額外能量。所述額外能量可以是來自磁場或其他的光源,例如在電漿生成反應系統中所額外加裝的紅外線或雷射系統。該熱處理之溫度係加熱至 100℃至350℃之間,以簡短轉化所需之時間。 The heat treatment comprises increasing the temperature of the organic germanium precursor or supplying the precursor with an additional energy. The additional energy may be from a magnetic field or other source of light, such as an infrared or laser system additionally incorporated in the plasma generation reaction system. The temperature of the heat treatment is heated to Between 100 ° C and 350 ° C, with a brief conversion time.
在一較佳實施例中,該三明治夾層薄膜係透過電感耦合電漿化學氣相沈積製程所成長,使用的有機矽前驅物為四甲基矽烷,化學式為Si(CH3)4,製程中搭配氧氣與氮氣做為製程氣體。 In a preferred embodiment, the sandwich interlayer film is grown by an inductively coupled plasma chemical vapor deposition process using an organic germanium precursor of tetramethyl decane and a chemical formula of Si(CH 3 ) 4 . Oxygen and nitrogen are used as process gases.
大氣中的水分或溼氣,容易使得一些喜歡水的材料產生劣化現象。該三明治夾層薄膜120中之該無機薄膜122係由二氧化矽(SiO2)所構成。二氧化矽材料具有相當優越之物理與化學特性,經常運用於各種化學合成物中。但是,純二氧化矽材質化學合成物表面非常喜歡吸附水。隨著時間增長,二氧化矽材料會產生劣化現象。這是由於以二氧化矽為主的化合物,發生化學反應的位置(官能基)為親水(Hydrophilic)的氫氧鍵。本身表面官能基為喜歡水(親水性)的官能基。因此,在與空氣接觸進行大氣乾燥時,會因為巨大的表面張力收縮而使得以二氧化矽為主的化合物破裂,導致材料使用壽命縮短。因此,在本發明中,藉由該第二有機薄膜123堆疊於該無機薄膜122之上,用以增強該三明治夾層薄膜120之表面之疏水性。 Moisture or moisture in the atmosphere can easily cause deterioration of some materials that like water. The inorganic thin film 122 in the sandwich interlayer film 120 is composed of cerium oxide (SiO 2 ). Ceria materials have quite superior physical and chemical properties and are often used in a variety of chemical compositions. However, the surface of a pure cerium oxide chemical composition likes to adsorb water. As time goes on, the cerium oxide material will deteriorate. This is due to the fact that the ruthenium dioxide-based compound has a chemically reactive position (functional group) which is a hydrophilic (hydrophilic) hydrogen-oxygen bond. The surface functional group itself is a functional group that prefers water (hydrophilic). Therefore, when it is exposed to air for atmospheric drying, the cerium oxide-based compound is broken due to the large surface tension shrinkage, resulting in a shortened material life. Therefore, in the present invention, the second organic film 123 is stacked on the inorganic film 122 to enhance the hydrophobicity of the surface of the sandwich film 120.
疏水性質主要以接觸角的大小來的評估。當物質與水滴的接觸角越大,疏水性越高;物質與水滴的接觸角越小,親水性越高。此外,氣體與固體兩者間的表面張力稱為表面自由能(Surface Free Energy);當表面自由能越大時,表面能可吸附的液體(液滴)能力就越大,液體吸附面積也越大,導致表面接觸角越小。亦即是,該第二有機薄膜123降低了該三明治夾層薄膜120之表面自由能。該三明治夾層薄膜120之表面具有一大於110度之疏水角度。較佳地,該三明治夾層薄膜120之表面之疏水角 度係介於110度至160度之間。表面經過疏水的塗層處理,可使得指紋及油污不易沾附在可撓式玻璃膜結構100的表面,擦拭及清潔更容易,同時也提供超滑順的觸動靈敏度性。 The hydrophobic nature is primarily assessed by the size of the contact angle. The greater the contact angle of the substance with the water droplet, the higher the hydrophobicity; the smaller the contact angle of the substance with the water droplet, the higher the hydrophilicity. In addition, the surface tension between gas and solid is called Surface Free Energy; when the surface free energy is larger, the liquid (droplet) capacity that the surface energy can adsorb is larger, and the liquid adsorption area is also higher. Large, resulting in a smaller surface contact angle. That is, the second organic film 123 reduces the surface free energy of the sandwich film 120. The surface of the sandwich film 120 has a hydrophobic angle greater than 110 degrees. Preferably, the hydrophobic angle of the surface of the sandwich film 120 The degree is between 110 degrees and 160 degrees. The surface is treated with a hydrophobic coating to make fingerprints and oils less likely to adhere to the surface of the flexible glass film structure 100, making it easier to wipe and clean, while also providing ultra-smooth touch sensitivity.
此發明之第一有機薄膜121與該第二有機薄膜122之厚度皆介於5nm至300nm之間,因此該可撓式玻璃膜結構100具有相當良好之透光度,其透光度介於70%至95%。較佳地,第一有機薄膜121與該第二有機薄膜122之厚度皆介於5nm至30nm之間,且該無機薄膜122之厚度介於10nm至50nm之間。更佳地,第一有機薄膜121與該第二有機薄膜122之厚度皆介於5nm至15nm之間,且該無機薄膜122之厚度介於10nm至30nm之間。因此該可撓式玻璃膜結構100具有相當良好之透光度,其透光度介於80%至95%。 The thickness of the first organic film 121 and the second organic film 122 of the invention are both between 5 nm and 300 nm, so the flexible glass film structure 100 has a relatively good transmittance, and the transmittance is 70. % to 95%. Preferably, the thickness of the first organic film 121 and the second organic film 122 are between 5 nm and 30 nm, and the thickness of the inorganic film 122 is between 10 nm and 50 nm. More preferably, the thickness of the first organic film 121 and the second organic film 122 are between 5 nm and 15 nm, and the thickness of the inorganic film 122 is between 10 nm and 30 nm. Therefore, the flexible glass film structure 100 has a relatively good transmittance and a transmittance of 80% to 95%.
在一具體實施例中,該第一有機薄膜與該第二有機薄膜係由氫氟矽氧烷化合物(SiaObCcHdFe)所構成,a、b、c、d、e分別表示各元素所佔原子百分比。a介於10%至30%,b介於10%至20%,c介於10%至20%,d介於15%至20%,e介於15%至25%,且a+b+c+d+e=1。該第一有機薄膜之厚度係介於10nm至12nm之間。該第二有機薄膜之厚度係介於10nm至12nm之間。該無機薄膜係由二氧化矽(SiO2)所構成,其薄膜厚度係為50nm。該可撓式基板係聚乙烯對苯二甲酸酯(PET)所構成。 In a specific embodiment, the first organic film and the second organic film are composed of a hydrofluoromethoxy siloxane compound (Si a O b C c H d F e ), a, b, c, d, e Represents the atomic percentage of each element. a between 10% and 30%, b between 10% and 20%, c between 10% and 20%, d between 15% and 20%, e between 15% and 25%, and a+b+ c+d+e=1. The thickness of the first organic film is between 10 nm and 12 nm. The thickness of the second organic film is between 10 nm and 12 nm. The inorganic thin film was composed of cerium oxide (SiO 2 ) and had a film thickness of 50 nm. The flexible substrate is composed of polyethylene terephthalate (PET).
該可撓式玻璃膜結構具有75%至85%之透光度:摩氏硬度達到8H;且表面具有一110度至之130度之之疏水角度。 The flexible glass film structure has a transmittance of 75% to 85%: a Mohs hardness of 8H; and the surface has a hydrophobic angle of 110 degrees to 130 degrees.
綜上所述,本發明之可撓式玻璃膜結構的製程方法具有以下之功效: In summary, the process method of the flexible glass film structure of the present invention has the following effects:
1.透過沈積多孔有機矽石玻璃薄膜之堆疊架構,呈現良好之透光性與疏水性。 1. Through the stacking structure of depositing porous organic vermiculite glass film, it exhibits good light transmittance and hydrophobicity.
2.透過沈積二氧化矽薄膜之夾層方式,提高可撓式薄膜之摩氏硬度與散熱能力。 2. Improve the Mohs hardness and heat dissipation capability of the flexible film by depositing the interlayer of the ruthenium dioxide film.
雖然本發明已以前述較佳實施例揭示,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與修改。如上述的解釋,都可以作各型式的修正與變化,而不會破壞此發明的精神。因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 While the present invention has been described in its preferred embodiments, it is not intended to limit the scope of the invention, and various modifications and changes can be made without departing from the spirit and scope of the invention. As explained above, various modifications and variations can be made without departing from the spirit of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
200‧‧‧可撓式玻璃膜結構的製程流程 200‧‧‧ Process flow of flexible glass membrane structure
210‧‧‧提供一可撓式基板 210‧‧‧ Provide a flexible substrate
220‧‧‧沈積一三明治夾層薄膜 220‧‧‧Deposition of a sandwich film
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