TW201605942A - Method and apparatus for manufacturing a resin substrate - Google Patents

Method and apparatus for manufacturing a resin substrate Download PDF

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TW201605942A
TW201605942A TW104113378A TW104113378A TW201605942A TW 201605942 A TW201605942 A TW 201605942A TW 104113378 A TW104113378 A TW 104113378A TW 104113378 A TW104113378 A TW 104113378A TW 201605942 A TW201605942 A TW 201605942A
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resin substrate
support
substrate
resin
group
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TW104113378A
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TWI658072B (en
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福永博志
菊地浩之
甲斐義人
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東京應化工業股份有限公司
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Abstract

The present invention discloses a method for producing a resin substrate, characterized by comprising the following steps: a preprocessing step, which is performed to apply a silane-coupling agent onto at least one surface of a support member made of glass; a coating step, which is performed to apply a solution containing polyamide acid or polyimide powder to the treated surface of the support member treated by the preprocessing step; a sintering step: which is performed after the coating step to heat the support member so that a resin substrate composed of polyimide can be formed on the support member; and a peeling step, which is performed to peel the resin substrate off the support member.

Description

樹脂基板之製造方法及裝置 Method and device for manufacturing resin substrate

本發明為關於樹脂基板之製造方法及裝置。 The present invention relates to a method and an apparatus for producing a resin substrate.

本專利申請案係依據2014年6月30日於日本國提出專利申請的特願2014-134398號主張優先權,並將該內容援用於此。 The present patent application claims priority based on Japanese Patent Application No. 2014-134398, filed on Jun.

近年,作為電子裝置用基板,具有以具可撓性的樹脂基板來取代玻璃基板之市場需求。為了製造如此般的樹脂基板,將樹脂基板形成於支撐基板(支撐體)後,支撐基板必須自樹脂基板剝離(參考例如專利文獻1)。 In recent years, there has been a demand for a substrate for an electronic device to replace a glass substrate with a flexible resin substrate. In order to manufacture such a resin substrate, after the resin substrate is formed on the support substrate (support), the support substrate must be peeled off from the resin substrate (see, for example, Patent Document 1).

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Document]

[專利文獻1]日本國特表2012-511173號公報 [Patent Document 1] Japanese National Patent Publication No. 2012-511173

然而,以往技術中,自支撐基板進行剝離之際為使用雷射,因而具有所謂對於樹脂基板造成損傷(damage)之問題。因此,期望提供一種剝離性為優異且可抑制剝離時之損傷之產生之新技術。 However, in the prior art, when the self-supporting substrate is peeled off, a laser is used, and thus there is a problem that damage occurs to the resin substrate. Therefore, it is desirable to provide a new technique which is excellent in peelability and which can suppress the occurrence of damage at the time of peeling.

本發明為有鑑於如此般之課題所完成者,目的為提供剝離性為優異且可抑制剝離時之損傷之產生之樹脂基板之製造方法,及包含藉此製造方法所得到的樹脂基板之裝置。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for producing a resin substrate which is excellent in peelability and which can suppress occurrence of damage during peeling, and an apparatus including the resin substrate obtained by the production method.

為了達成上述目的,本發明之第一樣態相關的樹脂基板之製造方法,其特徵係具備下述步驟,前處理步驟:將矽烷偶合劑處理至由玻璃所構成的支撐體之至少一方之面;塗佈步驟:將包含聚醯胺酸或聚醯亞胺粉末之溶液塗佈至前述支撐體中藉由前述前處理步驟之處理所施予而成之處理面;燒成步驟:前述塗佈步驟之後,藉由加熱前述支撐體來使由聚醯亞胺所構成的樹脂基板形成至前述支撐體;與剝離步驟:將前述樹脂基板自前述支撐體剝離。 In order to achieve the above object, a method for producing a resin substrate according to a first aspect of the present invention is characterized by the step of pretreating a decane coupling agent to at least one side of a support made of glass. a coating step of applying a solution containing a polyaminic acid or a polyimide pigment to the support in which the treatment is carried out by the treatment of the aforementioned pretreatment step; and a calcination step: the coating After the step, a resin substrate made of polyimide is formed by heating the support to the support; and a peeling step of peeling the resin substrate from the support.

依據本樣態相關的構成,由於藉由前處理而支撐體表面之羥基會被矽烷化,故可抑制構成樹脂基板之聚醯亞胺、與支撐體表面所形成的共價鍵。又,由於形成來自於矽烷偶合劑的矽烷基,故可提升由聚醯亞胺所構成的樹脂基板之剝離性。 According to the configuration of the present aspect, since the hydroxyl group on the surface of the support is deuterated by the pretreatment, the polyvalent imine constituting the resin substrate and the covalent bond formed on the surface of the support can be suppressed. Further, since the fluorenyl group derived from the decane coupling agent is formed, the releasability of the resin substrate composed of the polyimide can be improved.

因此,可製造剝離時之損傷之產生為經抑制的信賴性高的樹脂基板。 Therefore, it is possible to manufacture a resin substrate having high reliability that is suppressed when the peeling occurs.

又,上述樹脂基板之製造方法中,前述剝離步驟中,以在前述支撐體及前述樹脂基板之界面之一部份形成於剝離時機能作為基點之切口(slit)為較佳。 Further, in the method for producing a resin substrate, in the peeling step, it is preferable that a slit is formed as a base point at a portion of the interface between the support and the resin substrate.

藉由該構成,以切口作為起點發揮機能而可容易地將樹脂基板自支撐體剝離。 According to this configuration, the resin substrate can be easily peeled off from the support by functioning as a starting point with the slit.

又,上述樹脂基板之製造方法中,前述前處理步驟中,以將前述矽烷偶合劑選擇性處理至前述支撐體之至少一方之面之指定部份為較佳。 Further, in the method for producing a resin substrate, in the pretreatment step, it is preferred to selectively treat the decane coupling agent to a predetermined portion of at least one surface of the support.

藉由該構成,以支撐體之一部份為未經矽烷偶合劑之處理,而產生與樹脂基板之密著性為高之區域。因此,支撐體可良好地支撐樹脂基板,故即使是在製造支撐體與樹脂基板之層合體之步驟途中為被搬送之情形,亦可良好地保持樹脂基板。 According to this configuration, a part of the support is treated with a non-decane coupling agent, and a region having high adhesion to the resin substrate is generated. Therefore, since the support body can support the resin substrate satisfactorily, the resin substrate can be favorably held even when it is conveyed in the middle of the step of manufacturing the laminate of the support body and the resin substrate.

又,上述樹脂基板之製造方法中,前述前處理步驟中,以使用噴墨法來將前述矽烷偶合劑選擇性塗佈至前述指定部份為較佳。 Further, in the method for producing a resin substrate, in the pretreatment step, it is preferred that the decane coupling agent is selectively applied to the specified portion by an inkjet method.

藉由噴墨法,可簡便且確實地選擇性塗佈矽烷偶合材。 The decane coupling material can be selectively and reliably coated by an inkjet method.

又,上述樹脂基板之製造方法中,前述前處理步驟中,以使用蒸鍍法來將前述矽烷偶合劑選擇性處理至前述指定部份為較佳。 Further, in the method for producing a resin substrate, in the pretreatment step, it is preferred to selectively treat the decane coupling agent to the specified portion by a vapor deposition method.

藉由蒸鍍法,可簡便且確實地選擇性處理矽烷偶合 材。 Selectively and reliably selectively treat decane coupling by evaporation material.

本發明之第二樣態相關的裝置,其特徵係包含藉由第一樣態之製造方法所製造的樹脂基板。 A device according to a second aspect of the present invention is characterized by comprising a resin substrate manufactured by the manufacturing method of the first aspect.

依據本樣態相關的裝置,由於具備剝離時之損傷之產生為經抑制的信賴性高的樹脂基板,故該裝置本身亦成為信賴性高者。 According to the device of the present aspect, since the damage at the time of peeling is a resin substrate having high reliability that is suppressed, the device itself is also highly reliable.

藉由本發明,剝離性為優異且可抑制剝離時之損傷之產生。 According to the present invention, the peeling property is excellent and the occurrence of damage at the time of peeling can be suppressed.

1‧‧‧支撐基板(支撐體) 1‧‧‧Support substrate (support)

2‧‧‧處理膜 2‧‧‧Processing film

3‧‧‧樹脂基板 3‧‧‧Resin substrate

11‧‧‧樹脂基板 11‧‧‧Resin substrate

3a‧‧‧切口 3a‧‧‧ incision

1a‧‧‧表面 1a‧‧‧ surface

3A‧‧‧溶液 3A‧‧‧solution

10‧‧‧層合體 10‧‧‧Layer

15‧‧‧切刀片 15‧‧‧ cutting blade

16‧‧‧噴墨噴嘴 16‧‧‧Inkjet nozzle

20‧‧‧層合體 20‧‧‧Layer

〔圖1〕表示樹脂基板之製造之步驟圖。 Fig. 1 is a view showing a step of manufacturing a resin substrate.

〔圖2〕表示在前處理步驟所產生的化學反應之圖。 Fig. 2 is a view showing the chemical reaction generated in the pretreatment step.

〔圖3〕表示處理膜之剝離性提升之效果之實驗結果。 [Fig. 3] shows the experimental results of the effect of improving the peeling property of the treated film.

〔圖4〕(a)、(b)為表示切口之形成位置之圖。 (Fig. 4) (a) and (b) are views showing the positions at which the slits are formed.

〔圖5〕(a)、(b)為將處理膜形成至表面之一部份之情形之圖。 [Fig. 5] (a) and (b) are views showing a case where a treatment film is formed to a part of a surface.

〔圖6〕(a)~(d)為表示接續於圖5的樹脂基板之製造步驟之圖。 [Fig. 6] (a) to (d) are views showing a manufacturing step of the resin substrate continued from Fig. 5;

〔實施發明之最佳形態〕 [Best Practice for Carrying Out the Invention]

以下,一邊參考圖面一邊對於本發明之一實施形態進行說明。本實施形態係將製造作為電子裝置用之基板所使用之樹脂基板之情形舉例進行說明。尚,以下的說明中所用的圖面,為了便於理解特徵,存在出於方便而將特徵部份放大進行表示之情況,但並不限定各構成要素的尺寸比率等與實際相同。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the present embodiment, a case where a resin substrate used as a substrate for an electronic device is manufactured will be described as an example. In the drawings used in the following description, in order to facilitate the understanding of the features, the feature portions are enlarged for convenience. However, the size ratios and the like of the respective constituent elements are not limited to the actual ones.

本實施形態之樹脂基板之製造方法,其係具備下述步驟,前處理步驟:將矽烷偶合劑處理至支撐基板上;塗佈步驟:將樹脂基板形成用材料塗佈至支撐基板中之前處理面;燒成步驟:加熱支撐基板來使樹脂基板形成至支撐基板上;與剝離步驟:將樹脂基板自支撐基板剝離。 The method for producing a resin substrate according to the present embodiment includes the steps of: pretreating a decane coupling agent onto a support substrate; and applying a step of applying a resin substrate forming material to the support substrate The firing step: heating the support substrate to form the resin substrate onto the support substrate; and the peeling step: peeling the resin substrate from the support substrate.

圖1為表示本實施形態相關的樹脂基板之製造之步驟圖。 Fig. 1 is a flow chart showing the manufacture of a resin substrate according to the embodiment.

首先,如圖1(a)所示般,進行將矽烷偶合劑處理至支撐基板1之表面(至少一方之面)1a之前處理(前處理步驟)。本實施形態中,支撐基板1為由玻璃所構成。 First, as shown in Fig. 1(a), the treatment is carried out before the treatment of the surface of the support substrate 1 (at least one surface) 1a by the treatment of the decane coupling agent (pretreatment step). In the present embodiment, the support substrate 1 is made of glass.

前處理中,將處理液藉由塗佈(包含噴塗)至支撐基板(支撐體)1之表面1a來進行。前處理之處理時間,較佳設為1~60秒。尚,以取代塗佈處理液,亦可藉由蒸鍍法來進行於支撐基板1之以矽烷偶合材之處理。藉由蒸鍍法之處理時間,以例如在80℃~120℃之烘 箱內進行1~15分鐘為較佳。 In the pretreatment, the treatment liquid is applied by coating (including spraying) to the surface 1a of the support substrate (support) 1. The processing time of the pre-processing is preferably set to 1 to 60 seconds. Alternatively, instead of the coating treatment liquid, the treatment of the decane coupling material on the support substrate 1 may be carried out by a vapor deposition method. By the treatment time of the evaporation method, for example, baking at 80 ° C to 120 ° C It is better to carry out 1 to 15 minutes in the box.

本實施形態中,使用於前處理之處理液為含有矽烷化劑及溶劑者。以下,對於各成分進行詳細說明。 In the present embodiment, the treatment liquid used in the pretreatment is a solvent containing a decylating agent and a solvent. Hereinafter, each component will be described in detail.

(矽烷化劑) (alkylating agent)

作為矽烷化劑未特別限定,可使用以往習知的所有的矽烷化劑。具體而言可使用例如下述式(1)~(3)所表示的矽烷化劑。本說明書中,烷基為碳數1~5,環烷基為碳數5~10,烷氧基為碳數1~5,雜環烷基為碳數5~10。 The decylating agent is not particularly limited, and all conventional sulfonating agents can be used. Specifically, for example, a decylating agent represented by the following formulas (1) to (3) can be used. In the present specification, the alkyl group has a carbon number of 1 to 5, the cycloalkyl group has a carbon number of 5 to 10, the alkoxy group has a carbon number of 1 to 5, and the heterocycloalkyl group has a carbon number of 5 to 10.

(式(1)中,R1為表示氫原子、或飽和或不飽和烷基,R2為表示飽和或不飽和烷基、飽和或不飽和環烷基、或飽和或不飽和雜環烷基。R1及R2可相互鍵結而形成具有氮原子的飽和或不飽和雜環烷基)。 (In the formula (1), R 1 represents a hydrogen atom or a saturated or unsaturated alkyl group, and R 2 represents a saturated or unsaturated alkyl group, a saturated or unsaturated cycloalkyl group, or a saturated or unsaturated heterocycloalkyl group. R 1 and R 2 may be bonded to each other to form a saturated or unsaturated heterocycloalkyl group having a nitrogen atom).

(式(2)中,R3為表示氫原子、甲基、三甲基矽烷基、或二甲基矽烷基,R4、R5分別獨立表示氫原子、烷基、或乙烯基)。 (In the formula (2), R 3 represents a hydrogen atom, a methyl group, a trimethylsulfanyl group or a dimethylalkyl group, and R 4 and R 5 each independently represent a hydrogen atom, an alkyl group or a vinyl group).

(式(3)中,X為表示O、CHR7、CHOR7、CR7R7、或NR8,R6、R7分別獨立表示氫原子、飽和或不飽和烷基、飽和或不飽和環烷基、三烷基矽烷基、三烷基矽烷基氧基、烷氧基、苯基、苯乙基、或乙醯基,R8為表示氫原子、烷基、或三烷基矽烷基)。 (In the formula (3), X represents O, CHR 7 , CHOR 7 , CR 7 R 7 or NR 8 , and R 6 and R 7 each independently represent a hydrogen atom, a saturated or unsaturated alkyl group, a saturated or unsaturated ring. An alkyl group, a trialkyl decyl group, a trialkyl decyloxy group, an alkoxy group, a phenyl group, a phenethyl group or an ethyl fluorenyl group, and R 8 is a hydrogen atom, an alkyl group or a trialkyl decyl group.

作為上述式(1)所表示的矽烷化劑,舉例如N,N-二甲基胺基三甲基矽烷、N,N-二乙基胺基三甲基矽烷、t-丁基胺基三甲基矽烷、烯丙基胺基三甲基矽烷、三甲基矽烷基乙醯胺、三甲基矽烷基哌啶、三甲基矽烷基咪唑、三甲基矽烷基嗎啉、3-三甲基矽烷基-2-噁唑林酮、三甲基矽烷基吡唑、三甲基矽烷基吡咯啶、2-三甲基矽烷基-1,2,3-三唑、1-三甲基矽烷基-1,2,4-三唑等。 The decylating agent represented by the above formula (1) is, for example, N,N-dimethylaminotrimethyldecane, N,N-diethylaminotrimethylnonane, t-butylamino group III. Methyl decane, allylamino trimethyl decane, trimethyl decyl decylamine, trimethyl decyl piperidine, trimethyl decyl imidazole, trimethyl decyl morpholine, 3-trimethyl Base alkyl-2-oxazolinone, trimethyldecyl pyrazole, trimethyldecyl pyrrolidine, 2-trimethyldecyl-1,2,3-triazole, 1-trimethyldecane Base-1,2,4-triazole and the like.

又,作為上述式(2)所表示的矽烷化劑,舉例如六甲基二矽氮烷、N-甲基六甲基二矽氮烷、1,2-二-N-辛基四甲基二矽氮烷、1,2-二乙烯基四甲基二矽氮烷、八 甲基二矽氮烷、九甲基三矽氮烷、參(二甲基矽烷基)胺等。 In addition, examples of the decylating agent represented by the above formula (2) include hexamethyldiazepine, N-methylhexamethyldioxane, and 1,2-di-N-octyltetramethyl. Dioxane, 1,2-divinyltetramethyldiazepine, eight Methyl diazirane, nonamethyltriazane, ginseng (dimethyl decyl)amine, and the like.

又,作為上述式(3)所表示的矽烷化劑,舉例如三甲基矽烷基乙酸酯、三甲基矽烷基丙酸酯、三甲基矽烷基丁酸酯、三甲基矽烷基氧基-3-戊烯-2-酮等。 Further, examples of the decylating agent represented by the above formula (3) include trimethyl decyl acetate, trimethyl decyl propionate, trimethyl decyl butyrate, and trimethyl decyloxy group. Alkyl-3-penten-2-one and the like.

矽烷化劑之含有量,表面處理液中較佳為0.1~50質量%,又較佳為0.5~30質量%,更佳為1.0~20質量%。藉由設為上述範圍,除了可確保表面處理液之塗佈性以外,並可充分提高圖型表面之疏水性。 The content of the alkylating agent is preferably from 0.1 to 50% by mass, more preferably from 0.5 to 30% by mass, even more preferably from 1.0 to 20% by mass, based on the surface treatment liquid. By setting it as the said range, in addition to ensuring the coating property of a surface treatment liquid, the hydrophobicity of the surface of a pattern can fully be improved.

(溶劑) (solvent)

作為溶劑,只要是可溶解矽烷化劑、且對於成為表面處理對象之樹脂圖型或被蝕刻圖型之損傷為少者即可,未特別限定可使用以往習知的溶劑。 The solvent is not particularly limited as long as it is a resin which can dissolve the sulfonating agent and has a small amount of damage to the resin pattern to be surface-treated or the pattern to be etched, and a conventionally used solvent can be used.

具體而言,舉例如二甲基亞碸等之亞碸類;二甲基碸、二乙基碸、雙(2-羥基乙基)碸、四亞甲基碸等之碸類;N,N-二甲基甲醯胺、N-甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基乙醯胺、N,N-二乙基乙醯胺等之醯胺類;N-甲基-2-吡咯啶酮、N-乙基-2-吡咯啶酮、N-丙基-2-吡咯啶酮、N-羥基甲基-2-吡咯啶酮、N-羥基乙基-2-吡咯啶酮等之內醯胺類;1,3-二甲基-2-咪唑啉酮、1,3-二乙基-2-咪唑啉酮、1,3-二異丙基-2-咪唑啉酮等之咪唑啉酮類;二甲基醚、二乙基醚、甲基乙基醚、二丙基醚、二異丙基醚、二丁基醚等之二烷基醚類;二甲基乙二醇(dimethyl glycol)、二甲基二乙二醇、二甲基三乙二醇、甲基乙基二乙二醇、二乙基乙二醇等之二烷基乙二醇醚類;甲基乙基酮、環己酮、2-庚酮、3-庚酮等之酮類;p-薄荷烷、二苯基薄荷烷、檸檬烯、萜品烯、莰烷、降莰烷、松茚烷等之萜烯類等。 Specifically, for example, an anthracene such as dimethyl hydrazine; an anthracene such as dimethyl hydrazine, diethyl hydrazine, bis(2-hydroxyethyl) fluorene or tetramethylene hydrazine; N, N; - decylamines such as dimethylformamide, N-methylformamide, N,N-dimethylacetamide, N-methylacetamide, N,N-diethylacetamide N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-propyl-2-pyrrolidone, N-hydroxymethyl-2-pyrrolidone, N-hydroxyethyl Indoleamines such as pyridine-2-pyrrolidone; 1,3-dimethyl-2-imidazolidinone, 1,3-diethyl-2-imidazolidinone, 1,3-diisopropyl An imidazolinone such as 2-imidazolidinone; a dialkyl ether such as dimethyl ether, diethyl ether, methyl ethyl ether, dipropyl ether, diisopropyl ether or dibutyl ether Class; dimethyl glycol (dimethyl Dialkyl glycol ethers such as glycol), dimethyl diethylene glycol, dimethyl triethylene glycol, methyl ethyl diethylene glycol, diethyl glycol; methyl ethyl ketone a ketone such as cyclohexanone, 2-heptanone or 3-heptanone; a terpene such as p-menthane, diphenylmethane, limonene, terpinene, decane, norbornane or decane. Classes, etc.

藉由上述前處理,如圖1(b)所示般,支撐基板1之表面1a上來自於矽烷偶合材(矽烷化劑)的處理膜2會形成於表面1a之整體。 By the above pretreatment, as shown in Fig. 1(b), the treatment film 2 derived from the decane coupling material (the decylating agent) on the surface 1a of the support substrate 1 is formed on the entire surface 1a.

在此,對於在前處理步驟中於處理膜2與支撐基板1之表面1a之間所產生的化學反應進行說明。圖2為表示在前處理步驟中,在處理膜2與支撐基板1之表面1a之間所產生的化學反應之圖。以下之說明為舉例上述式(2)所表示的矽烷化劑(HMDS(六甲基二矽氮烷))來進行說明。 Here, the chemical reaction generated between the treatment film 2 and the surface 1a of the support substrate 1 in the pretreatment step will be described. Fig. 2 is a view showing a chemical reaction generated between the treatment film 2 and the surface 1a of the support substrate 1 in the pretreatment step. The following description is given by exemplifying the decylating agent (HMDS (hexamethyldioxane)) represented by the above formula (2).

由玻璃所構成的支撐基板1,OH基(羥基)為存在於表面1a。因此,藉由矽烷偶合材來進行前處理時,HMDS會分解而鍵結於2個羥基,而產生氨(NH3)。藉此,支撐基板1之表面1a中的OH基(羥基)將被矽烷化,如圖2所示般,來自於矽烷化劑的包含矽烷基的處理膜2會被形成於表面1a。因而,支撐基板1係藉由處理膜2(矽烷基)之形成於表面1a,而成為OHH基(羥基)為不存在之狀態。 The support substrate 1 made of glass has an OH group (hydroxy group) present on the surface 1a. Therefore, when pretreatment is carried out by a decane coupling material, HMDS is decomposed and bonded to two hydroxyl groups to generate ammonia (NH 3 ). Thereby, the OH group (hydroxyl group) in the surface 1a of the support substrate 1 is decanolated, and as shown in Fig. 2, the oxime-containing treatment film 2 derived from the decylating agent is formed on the surface 1a. Therefore, the support substrate 1 is formed on the surface 1a by the treatment film 2 (alkylene group), and the OHK group (hydroxyl group) is not present.

接著,如圖1(c)所示般,將作為樹脂基板形成用材料的包含聚醯胺酸的溶液3A塗佈至藉由前處理 步驟之處理所施予而成之處理面(亦即,處理膜2)上。以下,對於使用於本實施形態的聚醯胺酸進行說明。 Next, as shown in FIG. 1(c), a solution 3A containing polylysine as a material for forming a resin substrate is applied to the pretreatment. The treatment of the step is performed on the treated surface (that is, the treatment film 2). Hereinafter, the polyamic acid used in the present embodiment will be described.

(聚醯胺酸) (polyglycine)

本實施形態中,由聚醯亞胺所構成的樹脂基板之生成時所使用的聚醯胺酸未特別限定,可從以往已知作為聚醯亞胺樹脂之前驅物的聚醯胺酸中予以適當選擇。 In the present embodiment, the polyamic acid used in the formation of the resin substrate composed of the polyimide is not particularly limited, and it can be used from a polyamic acid which is conventionally known as a precursor of a polyimide resin. Appropriate choice.

作為合適的聚醯胺酸,列舉例如由下式(4)所表示的構成單位所構成的聚醯胺酸。 For example, polylysine which is composed of a constituent unit represented by the following formula (4) is exemplified.

(式(4)中,R9為四價有機基,R10為二價有機基,n為式(1)所表示的構成單位之重複數)。 (In the formula (4), R 9 is a tetravalent organic group, R 10 is a divalent organic group, and n is a repeating number of constituent units represented by the formula (1)).

式(4)中,R9為四價有機基,R10為二價有機基,該等之碳數較佳為2~50,又較佳為2~30。R1及R2分別可為脂肪族基,亦可為芳香族基,亦可為組合該等構造之基。R9及R10,除了碳原子、及氫原子以外,亦可包含鹵素原子、氧原子、及硫原子。當R9及R10為包含氧原子、氮原子、或硫原子時,氧原子、氮原子、或硫原子可以作為選自含氮雜環基、-CONH-、-NH-、-N=N-、 -CH=N-、-COO-、-O-、-CO-、-SO-、-SO2-、-S-、及-S-S-之基而包含於R9及R10中,又較佳作為選自-O-、-CO-、-SO-、-SO2-、-S-、及-S-S-之基而包含於R9及R10中。 In the formula (4), R 9 is a tetravalent organic group, and R 10 is a divalent organic group, and the carbon number is preferably 2 to 50, and more preferably 2 to 30. R 1 and R 2 each may be an aliphatic group, an aromatic group, or a combination of the structures. R 9 and R 10 may contain a halogen atom, an oxygen atom, and a sulfur atom in addition to a carbon atom and a hydrogen atom. When R 9 and R 10 are an oxygen atom, a nitrogen atom or a sulfur atom, the oxygen atom, the nitrogen atom or the sulfur atom may be selected from a nitrogen-containing heterocyclic group, -CONH-, -NH-, -N=N. -, -CH=N-, -COO-, -O-, -CO-, -SO-, -SO 2 -, -S-, and -SS- are contained in R 9 and R 10 It is preferably contained in R 9 and R 10 as a group selected from the group consisting of -O-, -CO-, -SO-, -SO 2 -, -S-, and -SS-.

藉由加熱由上述式(4)所表示的構成單位所構成的聚醯胺酸,可得到由下式(5)所表示的構成單位所構成的聚醯亞胺樹脂。 By heating the polyamic acid consisting of the structural unit represented by the above formula (4), a polyimine resin composed of the constituent units represented by the following formula (5) can be obtained.

(式(5)中,R1及R2與式(4)為同義,n為式(5)所表示的構成單位之重複數)。 (In the formula (5), R 1 and R 2 have the same meanings as in the formula (4), and n is the number of repetitions of the constituent units represented by the formula (5)).

以下,對於聚醯胺酸之調製時所使用的四羧酸二酐成分、二胺成分、及N,N,N’,N’-四甲基脲、與聚醯胺酸之製造方法進行說明。 Hereinafter, a method for producing a tetracarboxylic dianhydride component, a diamine component, and N,N,N',N'-tetramethylurea, and polyglycine used in the preparation of polylysine will be described. .

(四羧酸二酐成分) (tetracarboxylic dianhydride component)

成為聚醯胺酸之合成原料之四羧酸二酐成分,只要是藉由與二胺成分反應而可形成聚醯胺酸者即可,未特別限定。四羧酸二酐成分可自以往以來作為聚醯胺酸之合成原料所使用的四羧酸二酐中適當選擇。四羧酸二酐成分可為芳香族四羧酸二酐,亦可為脂肪族四羧酸二酐,但就所得 到的聚醯亞胺樹脂之耐熱性之方面而言,較佳為芳香族四羧酸二酐。四羧酸二酐成分亦可組合2種以上使用。 The tetracarboxylic dianhydride component which is a synthetic raw material of polyamic acid is not particularly limited as long as it can form polyamic acid by reacting with a diamine component. The tetracarboxylic dianhydride component can be appropriately selected from the conventional tetracarboxylic dianhydride used as a synthetic raw material of polyamic acid. The tetracarboxylic dianhydride component may be an aromatic tetracarboxylic dianhydride or an aliphatic tetracarboxylic dianhydride, but the obtained The aromatic tetracarboxylic dianhydride is preferred from the viewpoint of heat resistance of the obtained polyimide resin. The tetracarboxylic dianhydride component may be used in combination of two or more kinds.

作為芳香族四羧酸二酐之合適之具體例,舉例如苯均四酸二酐、3,3’,4,4’-聯苯四羧酸二酐、2,3,3’,4’-聯苯四羧酸二酐、3,3’,4,4’-二苯甲酮四羧酸二酐、4,4’-氧基二鄰苯二甲酸酐、及3,3’,4,4’-二苯碸四羧酸二酐等。該等之中,就價格、易取得性等,較佳為3,3’,4,4’-聯苯四羧酸二酐、及苯均四酸二酐。 Specific examples of suitable aromatic tetracarboxylic dianhydrides include pyromellitic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, and 2,3,3',4'. -biphenyltetracarboxylic dianhydride, 3,3',4,4'-benzophenonetetracarboxylic dianhydride, 4,4'-oxydiphthalic anhydride, and 3,3',4 , 4'-diphenylfluorene tetracarboxylic dianhydride, and the like. Among these, 3,3', 4,4'-biphenyltetracarboxylic dianhydride and pyromellitic dianhydride are preferable in terms of price, availability, and the like.

(二胺成分) (diamine component)

成為聚醯胺酸之合成原料之二胺成分,只要是藉由與四羧酸二酐成分反應而可形成聚醯胺酸者即可,未特別限定。二胺成分可自以往以來作為聚醯胺酸之合成原料所使用的二胺中適當選擇。二胺成分可為芳香族二胺,亦可為脂肪族二胺,但就所得到的聚醯亞胺樹脂之耐熱性之方面而言,較佳為芳香族二胺。二胺成分亦可組合2種以上使用。 The diamine component which is a synthetic raw material of polyamic acid is not particularly limited as long as it can form a polyamic acid by reacting with a tetracarboxylic dianhydride component. The diamine component can be appropriately selected from the conventional diamines used as a synthetic raw material of polyamic acid. The diamine component may be an aromatic diamine or an aliphatic diamine, but in terms of heat resistance of the obtained polyimine resin, an aromatic diamine is preferred. The diamine component may be used in combination of two or more kinds.

作為芳香族二胺之合適之具體例,舉例如p-苯二胺、m-苯二胺、2,4-二胺基甲苯、4,4’-二胺基聯苯、4,4’-二胺基-2,2’-雙(三氟甲基)聯苯、3,3’-二胺基二苯碸、4,4’-二胺基二苯碸、4,4’-二胺基二苯硫醚、4,4’-二胺基二苯基甲烷、4,4’-二胺基二苯醚、3,4’-二胺基二苯醚、3,3’-二胺基二苯醚、1,4-雙(4-胺基苯氧基)苯、1,3-雙(4-胺基苯氧基)苯、1,3-雙(3-胺基苯氧基)苯、4,4’- 雙(4-胺基苯氧基)聯苯、雙[4-(4-胺基苯氧基)苯基]碸、雙[4-(3-胺基苯氧基)苯基]碸、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、及2,2-雙[4-(4-胺基苯氧基)苯基]六氟丙烷等。該等之中,就價格、易取得性等,較佳為p-苯二胺、m-苯二胺、2,4-二胺基甲苯、及4,4’-二胺基二苯醚。 Specific examples of suitable aromatic diamines include, for example, p-phenylenediamine, m-phenylenediamine, 2,4-diaminotoluene, 4,4'-diaminobiphenyl, 4,4'- Diamino-2,2'-bis(trifluoromethyl)biphenyl, 3,3'-diaminodiphenyl hydrazine, 4,4'-diaminodiphenyl hydrazine, 4,4'-diamine Diphenyl sulfide, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diamine Diphenyl ether, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy) ) Benzene, 4, 4'- Bis(4-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl]anthracene, bis[4-(3-aminophenoxy)phenyl]anthracene, 2 2-bis[4-(4-aminophenoxy)phenyl]propane, and 2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane. Among these, p-phenylenediamine, m-phenylenediamine, 2,4-diaminotoluene, and 4,4'-diaminodiphenyl ether are preferable in terms of price, availability, and the like.

(N,N,N’,N’-四甲基脲) (N,N,N',N'-tetramethylurea)

四羧酸二酐成分與二胺成分,係使用N,N,N’,N’-四甲基脲作為溶劑所合成。將N,N,N’,N’-四甲基脲使用作為溶劑所合成的聚醯胺酸,加熱該聚醯胺酸使生成聚醯亞胺樹脂時,容易得到拉伸伸度及耐熱性為優異的聚醯亞胺樹脂。 The tetracarboxylic dianhydride component and the diamine component were synthesized using N, N, N', N'-tetramethyl urea as a solvent. N, N, N', N'-tetramethyl urea is used as a solvent to synthesize polylysine, and heating the polyamic acid to form a polyimide resin is easy to obtain tensile elongation and heat resistance. It is an excellent polyimine resin.

(聚醯胺酸之合成) (synthesis of polyaminic acid)

將以上所說明的四羧酸二酐成分、二胺成分,使用N,N,N’,N’-四甲基脲作為溶劑來進行反應而合成聚醯胺酸。合成聚醯胺酸之際,四羧酸二酐成分及二胺成分之使用量未特別限定,但相對於四羧酸二酐成分1莫耳,較佳為使用二胺成分0.50~1.50莫耳,又較佳為使用0.60~1.30莫耳,特佳為使用0.70~1.20莫耳。 The tetracarboxylic dianhydride component and the diamine component described above are reacted using N,N,N',N'-tetramethylurea as a solvent to synthesize polyglycine. When the polyamic acid is synthesized, the amount of the tetracarboxylic dianhydride component and the diamine component used is not particularly limited. However, it is preferably 0.50 to 1.50 moles of the diamine component based on 1 mole of the tetracarboxylic dianhydride component. It is preferably used with 0.60~1.30 m, especially preferably 0.70~1.20 m.

N,N,N’,N’-四甲基脲之使用量,只要是不阻礙本發明之目的之範圍內,未特別限定。典型而言,N,N,N’,N’-四甲基脲之使用量,相對於四羧酸二酐成分之 量與二胺成分之量之合計100質量份,較佳為100~4000質量份,又較佳為150~2000質量份。 The amount of use of N, N, N', N'-tetramethylurea is not particularly limited as long as it does not inhibit the object of the present invention. Typically, the amount of N, N, N', N'-tetramethylurea used is relative to the tetracarboxylic dianhydride component. The total amount of the diamine component is 100 parts by mass, preferably 100 to 4000 parts by mass, and more preferably 150 to 2000 parts by mass.

又,合成聚醯胺酸之際,作為溶劑最佳僅使用N,N,N’,N’-四甲基脲。但,在不阻礙本發明之目的之範圍內,可與N,N,N’,N’-四甲基脲一起使用N,N,N’,N’-四甲基脲以外之溶劑。N,N,N’,N’-四甲基脲以外之溶劑,可自以往以來使用於聚醯胺酸之合成的溶劑中適當選擇。作為N,N,N’,N’-四甲基脲以外之溶劑之合適例,可列舉例如N-甲基-2-吡咯啶酮、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、六甲基磷醯胺、及1,3-二甲基-2-咪唑啉酮等。當與N,N,N’,N’-四甲基脲一起使用N,N,N’,N’-四甲基脲以外之溶劑時,其他溶劑之使用量,相對於使用於聚醯胺酸之合成之溶劑之總質量,較佳為20質量%以下,又較佳為10質量%以下,特佳為5質量%以下。 Further, in the case of synthesizing polyamic acid, it is preferable to use only N, N, N', N'-tetramethylurea as a solvent. However, a solvent other than N,N,N',N'-tetramethylurea may be used together with N,N,N',N'-tetramethylurea to the extent that the object of the present invention is not hindered. A solvent other than N, N, N', N'-tetramethylurea can be appropriately selected from the solvents conventionally used for the synthesis of polylysine. Suitable examples of the solvent other than N,N,N',N'-tetramethylurea include, for example, N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N. - dimethylacetamide, hexamethylphosphoniumamine, and 1,3-dimethyl-2-imidazolidinone. When a solvent other than N, N, N', N'-tetramethylurea is used together with N, N, N', N'-tetramethylurea, the amount of other solvent used is relative to that used for polyamine The total mass of the solvent for acid synthesis is preferably 20% by mass or less, more preferably 10% by mass or less, and particularly preferably 5% by mass or less.

使四羧酸二酐成分與二胺成分反應之際之溫度,只要是反應可良好進行,未特別限定。典型而言,四羧酸二酐成分與二胺成分之反應溫度較佳為-5~150℃,又較佳為0~120℃,特佳為0~70℃。又,使四羧酸二酐成分與二胺成分反應之時間,雖然會依反應溫度而異,但典型而言較佳為1~50小時,又較佳為2~40小時,特佳為5~30小時。 The temperature at which the tetracarboxylic dianhydride component and the diamine component are reacted is not particularly limited as long as the reaction proceeds well. Typically, the reaction temperature of the tetracarboxylic dianhydride component and the diamine component is preferably -5 to 150 ° C, more preferably 0 to 120 ° C, and particularly preferably 0 to 70 ° C. Further, although the reaction time of the tetracarboxylic dianhydride component and the diamine component varies depending on the reaction temperature, it is preferably from 1 to 50 hours, preferably from 2 to 40 hours, particularly preferably from 5 to 5 hours. ~30 hours.

藉由以上說明之方法,可得到聚醯胺酸溶液。尚,亦可使用包含聚醯亞胺粉末之溶液來進行前處理。 A polyaminic acid solution can be obtained by the method described above. Alternatively, a pre-treatment may be carried out using a solution containing a polyimide pigment powder.

接著,如圖1(d)所示般,藉由將塗佈有溶液3A的支撐基板1加熱並燒成,使由聚醯亞胺所構成的樹脂基板3形成至支撐基板1而形成層合體10(燒成步驟)。 Next, as shown in FIG. 1(d), the support substrate 1 coated with the solution 3A is heated and fired, whereby the resin substrate 3 made of polyimide is formed on the support substrate 1 to form a laminate. 10 (burning step).

燒成步驟時,例如將支撐基板1加熱至120℃~350℃,較佳加熱至150℃~350℃。藉由以如此般的溫度範圍進行加熱,藉以抑制所生成的聚醯亞胺(樹脂基板3)之熱劣化或熱分解,而可製造優質品。又,使聚醯胺酸之加熱於高溫下進行時,由於會消耗大量的能量、或具有促進處理設備在高溫下之經時劣化之情形,故較佳以較低溫度來進行聚醯胺酸之加熱。具體而言,加熱聚醯胺酸之溫度之上限,以設為250℃以下為較佳,以設為220℃以下為又較佳,以設為200℃以下為特佳。 In the firing step, for example, the support substrate 1 is heated to 120 ° C to 350 ° C, preferably to 150 ° C to 350 ° C. By heating in such a temperature range, thermal deterioration or thermal decomposition of the produced polyimine (resin substrate 3) can be suppressed, and a high-quality product can be manufactured. Further, when the polyglycine is heated at a high temperature, it is preferable to carry out the polyamine at a lower temperature because it consumes a large amount of energy or has a situation in which the treatment equipment is deteriorated over time at a high temperature. Heating. Specifically, the upper limit of the temperature at which the polyamic acid is heated is preferably 250 ° C or lower, more preferably 220 ° C or lower, and particularly preferably 200 ° C or lower.

本實施形態中,在支撐基板1之表面1a與樹脂基板3之間存在著處理膜2。表面1a係藉由處理膜2而形成矽烷基,由於不存在OH基(羥基),故與構成樹脂基板3的聚醯亞胺不會形成共價鍵。又,藉由形成矽烷基,而聚醯亞胺與處理膜2之密著性會降低,使樹脂基板3之剝離性提升。 In the present embodiment, the treatment film 2 is present between the surface 1a of the support substrate 1 and the resin substrate 3. The surface 1a forms a fluorenyl group by treating the film 2, and since the OH group (hydroxy group) is not present, a covalent bond is not formed with the polyimine constituting the resin substrate 3. Further, by forming a decyl group, the adhesion between the polyimide and the treatment film 2 is lowered, and the releasability of the resin substrate 3 is improved.

圖3為表示處理膜2之剝離性提升之效果之實驗結果。圖3中,橫軸表示將樹脂基板形成至支撐基板上起所經過之時間(經過天數),縱軸表示聚醯亞胺(樹脂基板)與支撐基板之密著強度(單位:g)。又,圖3中,作為比較,將使用未藉由矽烷偶合劑進行處理之支撐 基板之情形,表示為「未處理」;將使用藉由矽烷偶合劑進行處理之支撐基板之情形,表示為「已處理1」、「已處理2」。尚,「已處理1」及「已處理2」為處理時所使用的矽烷偶合劑為相異。 Fig. 3 is an experimental result showing the effect of improving the peeling property of the treatment film 2. In FIG. 3, the horizontal axis represents the elapsed time (the number of days elapsed) after the resin substrate is formed on the support substrate, and the vertical axis represents the adhesion strength (unit: g) of the polyimide (resin substrate) and the support substrate. In addition, in Fig. 3, for comparison, support which is not treated by a decane coupling agent will be used. The case of the substrate is shown as "untreated"; the case where the support substrate treated by the decane coupling agent is used is indicated as "processed 1" and "processed 2". However, "Processed 1" and "Processed 2" are different from the decane coupling agents used in the treatment.

如圖3所示般,無論是藉由矽烷偶合劑進行處理之情形(已處理1、2)或未進行之情形(未處理),皆於將樹脂基板形成至支撐基板上後隨時間之經過而密著強度為降低。當經過天數超過3天時,在藉由矽烷偶合劑進行處理之情形或未進行之情形之間,密著強度變得未有太大之差異。此原因為,隨著時間之經過,由於構成樹脂基板的聚醯亞胺之吸附水分,因而使得在支撐基板之界面的密著強度降低之故。 As shown in Fig. 3, whether it is treated by a decane coupling agent (treated 1, 2) or not (untreated), after the resin substrate is formed on the support substrate, it passes over time. The adhesion strength is reduced. When the number of days passed exceeds 3 days, the adhesion strength does not become too large between the case of treatment with a decane coupling agent or the case where it is not carried out. The reason for this is that the adhesion strength of the polyimide substrate constituting the resin substrate is lowered as time passes, so that the adhesion strength at the interface of the support substrate is lowered.

通常,在形成樹脂基板後立即進行自支撐基板之剝離。因此,在經過時間為短之情形中,使密著強度降低為重要。 Usually, peeling of the self-supporting substrate is performed immediately after the formation of the resin substrate. Therefore, in the case where the elapsed time is short, it is important to reduce the adhesion strength.

由圖3可確認到,藉由矽烷偶合劑進行處理之情形(已處理1、2),在經過時間為短,亦即,即使未產生聚醯亞胺之水分吸附,能以低密著力而自樹脂基板剝離。 It can be confirmed from Fig. 3 that in the case of treatment with a decane coupling agent (treated 1, 2), the elapsed time is short, that is, even if the moisture adsorption of the polyimine is not produced, the adhesion can be low. Peel off from the resin substrate.

接著,將因應用途的電子裝置(未示圖)層合至樹脂基板3之上面。例如,在樹脂基板3上形成TFT元件,進而層合或貼合顯示元件,藉此可形成液晶顯示器、有機EL顯示器、電子紙等之顯示裝置。 Next, an electronic device (not shown) for the purpose is laminated on the upper surface of the resin substrate 3. For example, a TFT element is formed on the resin substrate 3, and a display element is laminated or bonded, whereby a display device such as a liquid crystal display, an organic EL display, or an electronic paper can be formed.

形成未示圖的電子裝置後,如圖1(e)所示 般,將樹脂基板3自支撐基板1剝離(剝離步驟)。 After forming an electronic device not shown, as shown in Figure 1(e) Generally, the resin substrate 3 is peeled off from the support substrate 1 (peeling step).

本實施形態中,剝離步驟時,在支撐基板1及樹脂基板3之界面之一部份形成於剝離時機能作為基點之切口。圖4(a)、(b)為表示形成切口之位置之圖。 In the present embodiment, in the peeling step, a portion of the interface between the support substrate 1 and the resin substrate 3 is formed as a slit at the base point during peeling. 4(a) and 4(b) are views showing a position at which a slit is formed.

切口3a之形成位置,例如如圖4(a)所示般,在俯視狀態下,較佳設為支撐基板1之四角。又,切口3a之形成位置,例如如圖4(b)所示般,在俯視狀態下,亦可設為支撐基板1之外周緣部之周長。尚,切口3a之形成,例如可使用旋轉的圓盤狀切刀片15。 The formation position of the slit 3a is preferably set to the four corners of the support substrate 1 in a plan view, for example, as shown in Fig. 4(a). Further, the position at which the slit 3a is formed may be, for example, as shown in FIG. 4(b), in the plan view, the circumferential length of the outer peripheral portion of the support substrate 1. Further, for the formation of the slit 3a, for example, a rotating disc-shaped cutting blade 15 can be used.

藉由本實施形態,由於處理膜2為形成至支撐基板1之表面1a,故如上述般,聚醯亞胺與處理膜2之密著性會降低。因此,將上述切口3a作為起點,可容易將形成有電子裝置的樹脂基板3自支撐基板1予以剝離。因而,剝離時不會對於樹脂基板3造成損傷,並可容易自支撐基板1剝離。 According to the present embodiment, since the treatment film 2 is formed on the surface 1a of the support substrate 1, the adhesion between the polyimide and the treatment film 2 is lowered as described above. Therefore, by using the slit 3a as a starting point, the resin substrate 3 on which the electronic device is formed can be easily peeled off from the support substrate 1. Therefore, the resin substrate 3 is not damaged at the time of peeling, and the substrate 1 can be easily peeled off.

以上為對於本發明之一實施形態進行說明,但本發明並不限定於上述內容,在不超出本發明之宗旨之範圍內可適當予以變更。例如,上述實施形態為舉出將處理膜2形成至支撐基板1之表面1a之整面之情形為例子,但本發明並不限定於此。 The above is an embodiment of the present invention, and the present invention is not limited to the above, and can be appropriately modified without departing from the scope of the invention. For example, the above embodiment is an example in which the treatment film 2 is formed on the entire surface of the surface 1a of the support substrate 1, but the present invention is not limited thereto.

例如,亦可選擇性形成至支撐基板1之表面1a之指定部份(例如,除了外周緣部以外的中心部)。將處理膜2選擇性形成至表面1a上時,可使用噴墨法或蒸鍍法。例如,如圖5(a)所示般,可將滴液材料(矽 烷偶合劑)從噴墨噴嘴16選擇性滴下至支撐基板1之表面1a。尚,使用蒸鍍法時,只要將不要之部份(外周緣部)予以遮罩(mask)即可。 For example, it is also possible to selectively form a predetermined portion (for example, a central portion other than the outer peripheral portion) of the surface 1a of the support substrate 1. When the treatment film 2 is selectively formed on the surface 1a, an inkjet method or an evaporation method can be used. For example, as shown in Fig. 5(a), the drip material can be used (矽 The alkane coupling agent is selectively dropped from the inkjet nozzle 16 to the surface 1a of the support substrate 1. However, when using the vapor deposition method, it is only necessary to mask the unnecessary portion (outer peripheral portion).

將處理膜2選擇性形成至表面1a上後,如圖6(a)所示般,藉由將聚醯胺酸溶液塗佈至支撐基板1之表面1a上並進行燒成,而形成由聚醯亞胺所構成的樹脂層13。因此,形成由支撐基板1及樹脂層13所構成的層合體20。 After the treatment film 2 is selectively formed on the surface 1a, as shown in FIG. 6(a), the polyphthalic acid solution is applied onto the surface 1a of the support substrate 1 and fired to form a poly-polymer. A resin layer 13 composed of sulfimine. Therefore, the laminate 20 composed of the support substrate 1 and the resin layer 13 is formed.

接著,將因應用途的電子裝置(未示圖)層合至樹脂層13之上面(包含成為後述樹脂基板11之區域之面)。例如,在樹脂基板13上形成TFT元件,進而層合或貼合顯示元件,藉此可形成液晶顯示器、有機EL顯示器、電子紙等之顯示裝置。 Next, an electronic device (not shown) for the application is laminated on the upper surface of the resin layer 13 (including the surface which becomes a region of the resin substrate 11 to be described later). For example, a TFT element is formed on the resin substrate 13, and a display element is laminated or bonded, whereby a display device such as a liquid crystal display, an organic EL display, or an electronic paper can be formed.

然而,及於樹脂層13之整體若因處理膜2而使得密著性降低時,在途中使層合體20移動之情形時,因振動或衝撃而有自支撐基板1剝離之虞。 However, when the adhesiveness is lowered by the treatment of the film 2 in the entire resin layer 13, when the laminate 20 is moved in the middle, the self-supporting substrate 1 is peeled off due to vibration or punching.

對此,如圖6(a)所示樣態,使樹脂層13僅在外周緣部中與支撐基板1之表面1a為密著。因此,樹脂層13之外周緣部可良好地保持於支撐基板1,外周緣部之內側則藉由處理膜2而對於支撐基板1之密著性為降低。 On the other hand, as shown in FIG. 6(a), the resin layer 13 is adhered to the surface 1a of the support substrate 1 only in the outer peripheral edge portion. Therefore, the outer peripheral edge portion of the resin layer 13 can be favorably held by the support substrate 1, and the inner side of the outer peripheral edge portion is lowered in adhesion to the support substrate 1 by the treatment film 2.

因此,例如即使在途中使層合體20移動,亦可防止因振動或衝撃等而自支撐基板1之剝離。 Therefore, for example, even if the laminate 20 is moved in the middle, peeling of the self-supporting substrate 1 due to vibration, punching, or the like can be prevented.

接著,如圖6(b)所示般,藉由切刀片15沿 著處理膜2之形成區域來切斷樹脂層13。之後,如圖6(c)、(d)所示般,沿著藉由切刀片15所切斷的開口13a,將樹脂基板11自樹脂層13取出。由於樹脂基板11為形成至處理膜2上,故與支撐基板1之密著性為降低。 Next, as shown in Fig. 6(b), by cutting the blade 15 along The formation region of the treatment film 2 is cut to cut the resin layer 13. Thereafter, as shown in FIGS. 6(c) and 6(d), the resin substrate 11 is taken out from the resin layer 13 along the opening 13a cut by the cutting blade 15. Since the resin substrate 11 is formed on the process film 2, the adhesion to the support substrate 1 is lowered.

因此,樹脂基板11,例如藉由掀起角落部而可容易地自處理膜2被剝離,自殘留於支撐基板1上的樹脂層13透過開口13a而被取出。藉由以上,可製造樹脂基板11。 Therefore, the resin substrate 11 can be easily peeled off from the treatment film 2 by, for example, lifting the corner portion, and the resin layer 13 remaining on the support substrate 1 is taken out through the opening 13a. According to the above, the resin substrate 11 can be manufactured.

又,上述實施形態為舉出將矽烷偶合劑僅處理至支撐基板1之一方之面(表面1a)來形成處理膜2之情形為例子,但亦可將處理膜2形成至支撐基板1之另一方之面(與表面1a相反之背面)來形成樹脂基板。亦即,可將樹脂基板3、11形成至支撐基板1之兩面。 Further, in the above embodiment, the case where the processing film 2 is formed by treating only the surface (surface 1a) of one side of the support substrate 1 with the decane coupling agent is mentioned, but the treatment film 2 may be formed to the other of the support substrate 1. The surface of one side (the back surface opposite to the surface 1a) forms a resin substrate. That is, the resin substrates 3, 11 can be formed to both sides of the support substrate 1.

1‧‧‧支撐基板(支撐體) 1‧‧‧Support substrate (support)

1a‧‧‧表面 1a‧‧‧ surface

2‧‧‧處理膜 2‧‧‧Processing film

3‧‧‧樹脂基板 3‧‧‧Resin substrate

3A‧‧‧溶液 3A‧‧‧solution

10‧‧‧層合體 10‧‧‧Layer

Claims (6)

一種樹脂基板之製造方法,其特徵係具備下述步驟,前處理步驟:將矽烷偶合劑處理至由玻璃所構成的支撐體之至少一方之面;塗佈步驟:將包含聚醯胺酸或聚醯亞胺粉末之溶液塗佈至前述支撐體中藉由前述前處理步驟之處理所施予而成之處理面;燒成步驟:前述塗佈步驟之後,藉由加熱前述支撐體來使由聚醯亞胺所構成的樹脂基板形成至前述支撐體;與剝離步驟:將前述樹脂基板自前述支撐體剝離。 A method for producing a resin substrate, comprising the steps of: treating a decane coupling agent to at least one surface of a support made of glass; and applying a step of: comprising polylysine or poly a solution of the quinone imine powder applied to the support body by the treatment of the foregoing pretreatment step; a firing step: after the coating step, by heating the support body A resin substrate composed of sulfimine is formed on the support; and a peeling step is performed to peel the resin substrate from the support. 如請求項1之樹脂基板之製造方法,其中,前述剝離步驟中,在前述支撐體及前述樹脂基板之界面之一部份形成於剝離時機能作為基點之切口。 The method of producing a resin substrate according to claim 1, wherein in the peeling step, a portion of the interface between the support and the resin substrate is formed as a slit at the time of peeling off. 如請求項1或2之樹脂基板之製造方法,其中,前述前處理步驟中,將前述矽烷偶合劑選擇性處理至前述支撐體之至少一方之面之指定部份。 The method for producing a resin substrate according to claim 1 or 2, wherein in the pretreatment step, the decane coupling agent is selectively treated to a designated portion of at least one of the surfaces of the support. 如請求項3之樹脂基板之製造方法,其中,前述前處理步驟中,使用噴墨法來將前述矽烷偶合劑選擇性塗佈至前述指定部份。 The method for producing a resin substrate according to claim 3, wherein in the pretreatment step, the decane coupling agent is selectively applied to the specified portion by an inkjet method. 如請求項3之樹脂基板之製造方法,其中,前述前處理步驟中,使用蒸鍍法來將前述矽烷偶合劑選擇性處理至前述指定部份。 The method for producing a resin substrate according to claim 3, wherein in the pretreatment step, the decane coupling agent is selectively treated to the specified portion by a vapor deposition method. 一種裝置,其特徵係包含藉由請求項1之樹脂基 板之製造方法所製造的樹脂基板。 A device characterized by comprising a resin base of claim 1 A resin substrate manufactured by a method of manufacturing a board.
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