CN105216348A - The manufacture method of resin substrate and device - Google Patents
The manufacture method of resin substrate and device Download PDFInfo
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- CN105216348A CN105216348A CN201510350436.8A CN201510350436A CN105216348A CN 105216348 A CN105216348 A CN 105216348A CN 201510350436 A CN201510350436 A CN 201510350436A CN 105216348 A CN105216348 A CN 105216348A
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Abstract
Problem of the present invention is to provide manufacture method and the device that fissility is excellent, can suppress the resin substrate of the generation damaged during stripping.The manufacture method of resin substrate of the present invention, is characterized in that, possesses following operation: pretreatment procedure, processes silane coupler at least one side of the supporting mass be made up of glass; Painting process, the treated side crossed based on the process of pretreatment procedure in the enforcement of supporting mass is coated with the solution comprising polyamic acid or polyimide powder; Firing process, after painting process, by heating supporting mass, thus forms the resin substrate comprising polyimides on supporting mass; And stripping process, peel off resin substrate from supporting mass.
Description
Technical field
The present invention relates to manufacture method and the device of resin substrate.
Background technology
In recent years, as substrate used for electronic device, there is the market demand making there is flexible resin substrate replacement glass substrate.In order to manufacture such resin substrate, need, after supporting substrates (supporting mass) upper formation resin substrate, supporting substrates to be peeled off (for example, referring to patent document 1) from resin substrate.
Prior art document
Patent document
Patent document 1: Japanese Unexamined Patent Application Publication 2012-511173 publication
Summary of the invention
The problem that invention will solve
But, in the prior art, during owing to peeling off from supporting substrates, use laser, and there is the problem causing damage such to resin substrate.Therefore, expect to provide the new technology that fissility is excellent, can suppress the generation damaged during stripping.
The present invention completes in view of such problem, its object is to provide fissility manufacture method that is excellent, the resin substrate of the generation of damage when can suppress to peel off and comprises the device of the resin substrate obtained by this manufacture method.
For solving the means of problem
In order to reach above-mentioned purpose, the manufacture method of the resin substrate of the 1st mode of the present invention, is characterized in that possessing following operation: pretreatment procedure, processes silane coupler at least one side of the supporting mass be made up of glass; Painting process, the treated side crossed based on the process of described pretreatment procedure in the enforcement of described supporting mass is coated with the solution comprising polyamic acid or polyimide powder; Firing process, after described painting process, by heating described supporting mass, thus forms the resin substrate comprising polyimides at described supporting mass; And stripping process, peel off described resin substrate from described supporting mass.
According to the formation of the manner, made the hydroxyl silylation on supporting mass surface by pre-treatment, therefore, it is possible to suppress the polyimides of formation resin substrate and supporting mass surface to form covalent bond.In addition, owing to forming the silicyl from silane coupler, therefore, it is possible to improve the fissility comprising the resin substrate of polyimides.
Thereby, it is possible to manufacture damage when peeling off be inhibited, resin substrate that reliability is high
In addition, in the described stripping process of the manufacture method of above-mentioned resin substrate, the part preferably at the interface of described supporting mass and described resin substrate forms the slit playing function when peeling off as basic point.
According to this formation, by being that starting point plays function with slit, thus easily can peel off resin substrate from supporting mass.
In addition, in the described pretreatment procedure of the manufacture method of above-mentioned resin substrate, preferably optionally process described silane coupler at the established part of at least one side of described supporting mass.
According to this formation, produce the region high with the adaptation of resin substrate owing to not processing silane coupler in a part for supporting mass.Thus, supporting mass can support resin substrate well, even if when therefore carrying the duplexer of supporting mass and resin substrate in the way of manufacturing process, resin substrate is also kept well.
In addition, in the described pretreatment procedure of the manufacture method of above-mentioned resin substrate, preferably utilize ink-jet method that described silane coupler is optionally coated on described established part.
Utilize ink-jet method, can easy and positively selectively applied silane coupler.
In addition, in the described pretreatment procedure of the manufacture method of above-mentioned resin substrate, vapour deposition method is preferably utilized optionally to process described silane coupler at described established part.
Utilize vapour deposition method, can easy and positively selective process silane coupler.
The device that 2nd mode of the present invention relates to, is characterized in that, comprises the resin substrate utilizing the manufacture method of the 1st mode to manufacture.
According to the device that the manner relates to, due to being inhibited of damaging when possessing stripping, resin substrate that reliability is high, therefore the reliability of this device self is also high.
Invention effect
According to the present invention, make fissility excellent, and the generation of damage when can suppress to peel off.
Accompanying drawing explanation
Fig. 1 represents the process chart manufacturing resin substrate.
Fig. 2 is the figure representing the chemical reaction occurred in pretreatment procedure.
Fig. 3 represents that the fissility of process film improves the experimental result of effect.
(a), (b) of Fig. 4 is the figure of the forming position representing slit.
(a), (b) of Fig. 5 is the figure of the situation of a part of formation processing film on surface.
(a) ~ (d) of Fig. 6 is the figure of the manufacturing process of the resin substrate represented after Fig. 5.
Detailed description of the invention
Below, limit is described an embodiment of the invention with reference to accompanying drawing limit.In present embodiment, enumerating the situation manufacturing the resin substrate being used as substrate for electronic device is that example is described.It should be noted that, in order to make feature easy understand, the accompanying drawing used in the following description sometimes amplifies the part becoming feature is shown for convenience's sake, but and does not mean that the dimensional ratios of each inscape etc. is identical with reality.
The manufacture method of the resin substrate of present embodiment possesses following operation: pretreatment procedure, supporting substrates processes silane coupler; Painting process, at the pre-treatment face of supporting substrates coating resin substrate formation material; Firing process, heats supporting substrates and on supporting substrates, forms resin substrate; And stripping process, peel off resin substrate from supporting substrates.
Fig. 1 represents the process chart manufacturing resin substrate of the present embodiment.
First, as shown in (a) of Fig. 1, carry out the pre-treatment (pretreatment procedure) of surface (at least one side) the 1a process silane coupler at supporting substrates 1.In the present embodiment, supporting substrates 1 is made up of glass.
Pre-treatment is undertaken by the surperficial 1a (comprising spraying) treatment fluid being coated supporting substrates (supporting mass) 1.The processing time of pre-treatment is preferably set to 1 ~ 60 second.It should be noted that, coating treatment fluid can be replaced and utilize vapour deposition method to utilize the process of silane coupler to supporting substrates 1.The processing time of vapour deposition method is utilized such as preferably in the baking oven of 80 DEG C ~ 120 DEG C, to carry out 1 ~ 15 minute.
In the present embodiment, the treatment fluid for pre-treatment contains monosilane agent and solvent.Below, each composition is described in detail.
(monosilane agent)
As monosilane agent, be not particularly limited, known all monosilane agents can be used.Specifically, the such as monosilane agent shown in following formula (1) ~ (3) can be used.In this manual, the carbon number of alkyl is 1 ~ 5, and the carbon number of cycloalkyl is 5 ~ 10, and the carbon number of alkoxyl is 1 ~ 5, and the carbon number of Heterocyclylalkyl is 5 ~ 10.
[changing 1]
(in formula (1), R
1represent hydrogen atom or saturated or unsaturated alkyl, R
2represent saturated or unsaturated alkyl, saturated or unsaturated cycloalkyl or saturated or unsaturated heterocycle alkyl.R
1with R
2can bonding and formed there is the saturated of nitrogen-atoms or unsaturated heterocycle alkyl mutually.)
[changing 2]
(in formula (2), R
3represent hydrogen atom, methyl, trimethyl silyl or dimetylsilyl, R
4and R
5separately represent hydrogen atom, alkyl or vinyl.)
[changing 3]
(in formula (3), X represents O, CHR
7, CHOR
7, CR
7r
7or NR
8, R
6and R
7separately represent hydrogen atom, saturated or unsaturated alkyl, saturated or unsaturated cycloalkyl, trialkylsilkl, trialkyl silica oxyalkyl, alkoxyl, phenyl, phenethyl or acetyl group, R
8represent hydrogen atom, alkyl or trialkylsilkl.)
As the monosilane agent shown in above-mentioned formula (1), N can be enumerated, N-dimethylamino trimethyl silane, N, N-diethylamino trimethyl silane, tert-butylamino trimethyl silane, allyl amino trimethyl silane, trimethyl silylacetamide, trimethyl silyl piperidines, trimethyl-silyl-imidazole, trimethyl silyl morpholine, 3-trimethyl silyl-2-oxazolidone, trimethyl silyl pyrazoles, trimethyl silyl pyrrolidines, 2-trimethyl silyl-1, 2, 3-triazole, 1-trimethyl silyl-1, 2, 4-triazole etc.
In addition, as the monosilane agent shown in above-mentioned formula (2), HMDS, N-methyl HMDS, 1 can be enumerated, 2-bis--N-octyl group tetramethyl-disilazane, 1,2-divinyl tetramethyl-disilazane, heptamethyldisilazane, nine methyl three silazane, three (dimetylsilyl) amine etc.
In addition, as the monosilane agent shown in above-mentioned formula (3), acetic acid trimethyl silyl ester, propionate trimethylsilyl monosilane ester, butyric acid trimethyl silyl ester, trimethylsiloxy-3-amylene-2-ketone etc. can be enumerated.
In surface treatment liquid, content preferably 0.1 ~ 50 quality % of monosilane agent, more preferably 0.5 ~ 30 quality %, further preferred 1.0 ~ 20 quality %.By being set to above-mentioned scope, on the basis of coating of guaranteeing surface treatment liquid, fully can improve the hydrophobicity of patterned surfaces.
(solvent)
As solvent, if monosilane agent can be dissolved and to the resin pattern or little by the damage of etched pattern becoming surface treatment object, then can be not particularly limited to use known solvent.
Specifically, the sulfoxide types such as dimethyl sulfoxide (DMSO) can be enumerated; Dimethyl sulfone, diethyl sulfone, sulfone class such as two (2-ethoxy) sulfone, tetramethylene sulfone etc.; The amide-types such as DMF, N-METHYLFORMAMIDE, DMA, N-methylacetamide, N, N-diethyl acetamide; The lactams such as METHYLPYRROLIDONE, N-ethyl-2-pyrrolidone, N-propyl group-2-Pyrrolidone, N-methylol-2-Pyrrolidone, N-ethoxy-2-Pyrrolidone; The imidazolone types such as DMI, 1,3-diethyl-2-imidazolone, 1,3-diisopropyl-2-imidazolone; The dialkyl ethers such as dimethyl ether, Anaesthetie Ether, methyl ethyl ether, dipropyl ether, Di Iso Propyl Ether, dibutyl ethers; The glycol dialkyl ether classes such as ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, diethylene glycol methyl ethyl ether, ethylene glycol bisthioglycolate ethylether; The ketones such as MEK, cyclohexanone, 2-HEPTANONE, 3-heptanone; To terpenes etc. such as terpane, diphenyl terpane, citrene, terpinenes, camphane, norbornane, pinanes.
By above-mentioned pre-treatment, as shown in (b) of Fig. 1, form the process film 2 from silane coupler (monosilane agent) at the whole surperficial 1a of supporting substrates 1.
At this, the chemical reaction occurred between process film 2 and the surperficial 1a of supporting substrates 1 in pretreatment procedure is described.Fig. 2 is the figure representing the chemical reaction occurred between process film 2 and the surperficial 1a of supporting substrates 1 in pretreatment procedure.In the following description, enumerate the monosilane agent (HMDS (HMDS)) represented for above-mentioned formula (2) to be described.
OH base (hydroxyl) is there is in the supporting substrates 1 be made up of glass at surperficial 1a.Therefore, utilize the pre-treatment of silane coupler if carry out, then HMDS decompose and with 2 hydroxyl bondings, produce ammonia (NH
3).Thus, the OH base (hydroxyl) on the surperficial 1a of supporting substrates 1, by silylation, forms the process film 2 of the silicyl comprised from monosilane agent as shown in Figure 2 at surperficial 1a.Therefore, for supporting substrates 1, by surperficial 1a formation processing film 2 (silicyl), thus become the state that there is not OH base (hydroxyl).
Next, as shown in (c) of Fig. 1, on treated side, i.e. the process film 2 of implementing the process based on pretreatment procedure, coating comprises the solution 3A of polyamic acid as resin substrate formation material.Below, the polyamic acid used in present embodiment is described.
(polyamic acid)
In the present embodiment, be not particularly limited for the polyamic acid generating the resin substrate comprising polyimides, can from suitably selecting from the past known with the precursor being used as polyimide resin polyamic acid.
As suitable polyamic acid, include, for example the polyamic acid comprising the Component units shown in following formula (4).
[changing 4]
(in formula (4), R
9be the organic group of 4 valencys, R
10for the organic group of divalent, n is the repeat number of the Component units shown in formula (1).)
In formula (4), R
9be the organic group of 4 valencys, R
10for the organic group of divalent, their carbon number is preferably 2 ~ 50, is more preferably 2 ~ 30.R
1and R
2can be aliphatic group respectively, also can be aromatic group, can also be the group become by these textural associations.R
9and R
10halogen atom, oxygen atom and sulphur atom can also be comprised except carbon atom and hydrogen atom.At R
9and R
10when comprising oxygen atom, nitrogen-atoms or sulphur atom, oxygen atom, nitrogen-atoms or sulphur atom can be selected from nitrogen heterocycle ,-CONH-,-NH-,-N=N-,-CH=N-,-COO-,-O-,-CO-,-SO-,-SO
2-, the form of group in-S-and-S-S-is contained in R
9and R
10in, more preferably to be selected from-O-,-CO-,-SO-,-SO
2-, the form of group in-S-and-S-S-is contained in R
9and R
10in.
By the polyamic acid of heat packs containing the Component units shown in above-mentioned formula (4), the polyimide resin comprising the Component units shown in following formula (5) can be obtained.
[changing 5]
(in formula (5), R
1and R
2with formula (4) synonym, n is the repeat number of the Component units shown in formula (5).)
Below, to for the preparation of tetracarboxylic dianhydride's composition of polyamic acid, diamine component and N, N, N ', the manufacture method of N '-tetramethylurea, polyamic acid is described.
(tetracarboxylic dianhydride's composition)
If the tetracarboxylic dianhydride's composition becoming the synthesis material of polyamic acid can form polyamic acid composition by reacting with diamine component is not particularly limited.Tetracarboxylic dianhydride's composition suitably can be selected from from the tetracarboxylic dianhydride of synthesis material being used as polyamic acid in the past.Tetracarboxylic dianhydride's composition can be aromatic tetracarboxylic acid's dianhydride, also can be aliphatic tetracarboxylic dianhydride, but the aspect of heat resistance from the polyimide resin obtained, optimization aromatic tetracarboxylic dianhydride.Tetracarboxylic dianhydride's composition can combinationally use two or more.
As the suitable concrete example of aromatic tetracarboxylic acid's dianhydride, pyromellitic acid dianhydride, 3 can be enumerated, 3 ', 4,4 '-biphenyl tetracarboxylic dianhydride, 2,3,3 ', 4 '-biphenyl tetracarboxylic dianhydride, 3,3 ', 4,4 '-benzophenone tetracarboxylic dianhydride, 4,4 '-oxygen base diphthalic anhydrides and 3,3 ', 4,4 '-diphenyl sulfone tetracarboxylic dianhydride etc.Wherein, from price, obtain easiness etc., preferably 3,3 ', 4,4 '-biphenyl tetracarboxylic dianhydride and pyromellitic acid dianhydride.
(diamine component)
If the diamine component becoming the synthesis material of polyamic acid can form polyamic acid by reacting with tetracarboxylic dianhydride's composition and be not particularly limited.Diamine component can be used as suitably selecting the diamines of the synthesis material of polyamic acid from since in the past.Diamine component can be aromatic diamine, also can be aliphatic diamine, but the aspect of heat resistance from the polyimide resin obtained, optimization aromatic diamines.Diamine component can combinationally use two or more.
As the suitable concrete example of aromatic diamine, P-pHENYLENE dI AMINE can be enumerated, m-phenylenediamine, 2, 4-diaminotoluene, 4, 4 '-benzidine, 4, 4 '-diaminourea-2, 2 '-bis-(trifluoromethyl) biphenyl, 3, 3 '-diamino diphenyl sulfone, 4, 4 '-diamino diphenyl sulfone, 4, 4 '-diaminodiphenyl sulfide, 4, 4 '-diaminodiphenyl-methane, 4, 4 '-diamino-diphenyl ether, 3, 4 '-diamino-diphenyl ether, 3, 3 '-diamino-diphenyl ether, 1, two (4-amino-benzene oxygen) benzene of 4-, 1, two (4-amino-benzene oxygen) benzene of 3-, 1, two (3-amino-benzene oxygen) benzene of 3-, 4, 4 '-bis-(4-amino-benzene oxygen) biphenyl, two [4-(4-amino-benzene oxygen) phenyl] sulfone, two [4-(3-amino-benzene oxygen) phenyl] sulfone, 2, two [4-(4-amino-benzene oxygen) phenyl] propane of 2-, with 2, two [4-(4-amino-benzene oxygen) phenyl] HFC-236fas of 2-etc.Wherein, from price, obtain easiness etc., preferred P-pHENYLENE dI AMINE, m-phenylenediamine, 2,4-diaminotoluenes and 4,4 '-diamino-diphenyl ether.
(N, N, N ', N '-tetramethylurea)
Tetracarboxylic dianhydride's composition and diamine component use N, N, N ', N '-tetramethylurea carries out synthesizing as solvent.If to by N, N, N ', the polyamic acid that N '-tetramethylurea is used as solvent and synthesizes carries out heating and generating polyimide resin, then easily obtain the polyimide resin of tensile elongation and excellent heat resistance.
(synthesis of polyamic acid)
Described above, by N, N, N ', N '-tetramethylurea is used as solvent and tetracarboxylic dianhydride's composition and diamine component is reacted carry out synthesizing polyamides acid.Tetracarboxylic dianhydride's composition during synthesizing polyamides acid and the use amount of diamine component are not particularly limited, relative to tetracarboxylic dianhydride's composition 1 mole, preferred use diamine component 0.50 ~ 1.50 mole, more preferably uses 0.60 ~ 1.30 mole, particularly preferably uses 0.70 ~ 1.20 mole.
N, N, N ', the use amount of N '-tetramethylurea is not particularly limited in the scope not destroying object of the present invention.Typical case, relative to summation 100 mass parts of the amount of tetracarboxylic dianhydride's composition and the amount of diamine component, N, N, N ', use amount preferably 100 ~ 4000 mass parts of N '-tetramethylurea, more preferably 150 ~ 2000 mass parts.
In addition, during synthesizing polyamides acid, as solvent, most preferably only use N, N, N ', N '-tetramethylurea.But, in the scope not hindering object of the present invention, can with N, N, N ', N '-tetramethylurea uses together except N, N, N ', the solvent beyond N '-tetramethylurea.Except N, N, N ', the solvent beyond N '-tetramethylurea suitably can have been selected from since in the past for the synthesis of the solvent of polyamic acid.As except N, N, N ', the suitable example of the solvent beyond N '-tetramethylurea, include, for example METHYLPYRROLIDONE, DMF, DMA, hexamethyl formamide and DMI etc.With N, N, N ', N '-tetramethylurea uses together except N, N, N ', when solvent beyond N '-tetramethylurea, the use amount of other solvent relative to gross mass preferably below the 20 quality % of the solvent for the synthesis of polyamic acid, more preferably below 10 quality %, particularly preferably below 5 quality %.
As long as temperature when making tetracarboxylic dianhydride's composition and diamine component react can make reaction be not particularly limited well.Typical case, the reaction temperature of tetracarboxylic dianhydride's composition and diamine component preferably-5 ~ 150 DEG C, more preferably 0 ~ 120 DEG C, particularly preferably 0 ~ 70 DEG C.In addition, make tetracarboxylic dianhydride's composition and the time that diamine component reacts also different according to reaction temperature, typical case, preferably 1 ~ 50 hour, more preferably 2 ~ 40 hours, particularly preferably 5 ~ 30 hours.
According to method described above, polyamic acid solution can be obtained.It should be noted that, the solution comprising polyimide powder also can be used to carry out pre-treatment.
Next, as shown in (d) of Fig. 1, the supporting substrates 1 being coated with solution 3A by heating is burnt till, thus forms duplexer 10 at supporting substrates 1, is formed with the resin substrate 3 (firing process) comprising polyimides in this duplexer 10.
In firing process, such as supporting substrates 1 is heated to 120 DEG C ~ 350 DEG C, preferably 150 DEG C ~ 350 DEG C.By heating with such temperature range, the heat deterioration of generated polyimides (resin substrate 3), thermal decomposition can be suppressed, thus manufacture the duplexer of high-quality.In addition, when at high temperature carrying out the heating of polyamic acid, sometimes promote the treatment facility under the consumption of large energy, high temperature through time deterioration, the therefore also preferred heating carrying out polyamic acid at lower slightly temperature.Specifically, preferably the upper limit of the temperature heated polyamic acid is set to less than 250 DEG C, is more preferably set to less than 220 DEG C, be particularly preferably set to less than 200 DEG C.
In the present embodiment, exist between the surperficial 1a and resin substrate 3 of supporting substrates 1 and process film 2.Be formed with the silicyl processing film 2 and bring at surperficial 1a, there is not OH base (hydroxyl), therefore can not produce covalent bond with the polyimides forming resin substrate 3.In addition, owing to being formed with silicyl, and polyimides and the adaptation of process film 2 are reduced, the fissility of resin substrate 3 improves.
Fig. 3 represents that the fissility of process film 2 improves the experimental result of effect.In figure 3, transverse axis represents on supporting substrates, to form elapsed time (through number of days) after resin substrate, and the longitudinal axis represents the dhering strength (unit: g) of polyimides (resin substrate) and supporting substrates.In addition, in Fig. 3, do not carry out utilizing the situation of the supporting substrates of the process of silane coupler to be expressed as " untreated " using using as comparing, use has been carried out utilizing the situation of the supporting substrates of the process of silane coupler as " processed 1 ", " processed 2 ".It should be noted that, in " processed 1 " and " processed 2 ", for the treatment of silane coupler different.
As shown in Figure 3, in any one situation of having carried out utilizing the situation of the process of silane coupler (processed 1,2) or do not carry out utilizing the situation of the process of silane coupler (untreated), along with the passing forming the time after resin substrate on supporting substrates, dhering strength all constantly reduces.If through number of days more than 3 days, then dhering strength is carrying out utilizing the situation of the process of silane coupler and not carrying out utilizing difference not large between the situation of the process of silane coupler.Its reason is, As time goes on makes the polyimides adsorption moisture of formation resin substrate, makes the dhering strength at the interface of supporting substrates reduce thus.
Usually, after just forming resin substrate, carry out the stripping from supporting substrates.Therefore, when the elapsed time is short, it is important that dhering strength is reduced.
Can be confirmed by Fig. 3: under carrying out utilizing the situation of the process of silane coupler (processed 1,2), even if the elapsed time is short, namely the water adsorption of polyimides does not occur, also with low closing force, resin substrate can be peeled off from supporting substrates.
Next, at the stacked electronic device (not shown) of fitting mutually with purposes of the upper surface of resin substrate 3.Such as, by forming TFT element on resin substrate 3, more stacked or laminating display element, thus the display devices such as liquid crystal display, organic el display, Electronic Paper can be formed.
After forming not shown electronic device, as shown in (e) of Fig. 1, peel off resin substrate 3 (stripping process) from supporting substrates 1.
In the stripping process of present embodiment, play the slit of function as basic point when the part at the interface of supporting substrates 1 and resin substrate 3 is formed with stripping.(a), (b) of Fig. 4 is the figure representing the position forming slit.
As shown in (a) of Fig. 4, under the state of overlooking, the forming position of slit 3a is preferably located at the corner of such as supporting substrates 1.In addition, as shown in (b) of Fig. 4, under the state of overlooking, the forming position of slit 3a also can be located at the complete cycle of the edge, periphery of such as supporting substrates 1.It should be noted that, in the formation of slit 3a, such as, use the discoid blade 15 of rotation.
According to the present embodiment, due to the surperficial 1a formation processing film 2 at supporting substrates 1, polyimides is therefore made to reduce with the adaptation of process film 2 as described above.Therefore, it is possible to the resin substrate 3 being formed with electronic device is easily peeled off from supporting substrates 1 for starting point with above-mentioned slit 3a.Thereby, it is possible to easily peel off from supporting substrates 1 and do not cause damage to resin substrate 3 when peeling off.
Above, an embodiment of the invention are illustrated, but the present invention is not limited to foregoing, can suitably changes in the scope of purport not departing from invention.The situation such as listing whole the formation processing film 2 of the surperficial 1a at supporting substrates 1 is in the above-described embodiment example, but the present invention is not limited to this.
Such as can at the established part of the surperficial 1a of supporting substrates 1 (central part such as except for the outer outside circumference) optionally formation processing film 2.On surperficial 1a optionally formation processing film 2, ink-jet method or vapour deposition method can be utilized.Such as, as shown in (a) of Fig. 5, can optionally drip droplet material (silane coupler) from inkjet nozzle 16 to the surperficial 1a of supporting substrates 1.It should be noted that, when utilizing vapour deposition method, covering unwanted part (edge, periphery).
On surperficial 1a optionally after formation processing film 2, as shown in (a) of Fig. 6, burn till by being coated with polyamic acid solution on the surperficial 1a of supporting substrates 1, thus form the resin bed 13 comprising polyimides.Thus, the duplexer 20 comprising supporting substrates 1 and resin bed 13 is formed.
Next, at the stacked electronic device (not shown) of fitting mutually with purposes of upper surface (comprising the face becoming the region of resin substrate 11 described later) of resin bed 13.Such as, by forming TFT element on resin bed 13, more stacked or laminating display element, thus the display devices such as liquid crystal display, organic el display, Electronic Paper can be formed.
But, if make the adaptation of resin bed 13 entirety reduce under the effect of process film 2, then likely make resin bed 13 because of vibration when moving duplexer 20 on the way, impact and peel off from supporting substrates 1.
On the other hand, in the mode shown in (a) of Fig. 6, only the surperficial 1a of circumference and supporting substrates 1 is closely sealed outside for resin bed 13.Therefore, the edge, periphery of resin bed 13 is held in supporting substrates 1 well, under the effect of process film 2, the inner side of edge, periphery is reduced to the adaptation of supporting substrates 1.
Thus, such as, even if move duplexer 20 on the way, also can prevent resin bed 13 from peeling off from supporting substrates 1 because of vibration, impact etc.
Next, as shown in (b) of Fig. 6, the forming region blade 15 along process film 2 cuts off resin bed 13.Then, as shown in (c), (d) of Fig. 6, along the opening 13a cut off with blade 15, take out resin substrate 11 from resin bed 13.Because resin substrate 11 is formed on process film 2, therefore reduce with the adaptation of supporting substrates 1.
Thus, resin substrate 11 such as easily can be peeled off from process film 2 by lifting bight, and takes out from the resin bed 13 that supporting substrates 1 is residual via opening 13a.Based on above situation, resin substrate 11 can be manufactured.
In addition, in the above-described embodiment, list and only process silane coupler and the situation of formation processing film 2 is example in the one side (surperficial 1a) of supporting substrates 1, also at the another side of supporting substrates 1 (back side contrary with surperficial 1a) also formation processing film 2, and resin substrate can be formed.That is, also resin substrate 3,11 can be formed on the two sides of supporting substrates 1.
Symbol description
1 ... supporting substrates (supporting mass), 2 ... process film, 3,11 ... resin substrate, 3a ... slit.
Claims (6)
1. a manufacture method for resin substrate, is characterized in that, it possesses following operation:
Pretreatment procedure, processes silane coupler at least one side of the supporting mass be made up of glass;
Painting process, the treated side crossed based on the process of described pretreatment procedure in the enforcement of described supporting mass is coated with the solution comprising polyamic acid or polyimide powder;
Firing process, after described painting process, by heating described supporting mass, thus forms the resin substrate comprising polyimides at described supporting mass; With
Stripping process, peels off described resin substrate from described supporting mass.
2. the manufacture method of resin substrate as claimed in claim 1, is characterized in that, in described stripping process, to play the slit of function when the part at the interface of described supporting mass and described resin substrate is formed and peels off as basic point.
3. the manufacture method of resin substrate as claimed in claim 1 or 2, is characterized in that, in described pretreatment procedure, optionally processes described silane coupler at the established part of at least one side of described supporting mass.
4. the manufacture method of resin substrate as claimed in claim 3, is characterized in that, in described pretreatment procedure, utilize ink-jet method that described silane coupler is optionally coated on described established part.
5. the manufacture method of resin substrate as claimed in claim 3, is characterized in that, in described pretreatment procedure, utilize vapour deposition method optionally to process described silane coupler at described established part.
6. a device, is characterized in that, the resin substrate that its manufacture method comprising the resin substrate utilized according to any one of claim 1 ~ 5 manufactures.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014134398A JP6412727B2 (en) | 2014-06-30 | 2014-06-30 | Manufacturing method of resin substrate and manufacturing method of display device |
| JP2014-134398 | 2014-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105216348A true CN105216348A (en) | 2016-01-06 |
Family
ID=54985777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510350436.8A Pending CN105216348A (en) | 2014-06-30 | 2015-06-23 | The manufacture method of resin substrate and device |
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| Country | Link |
|---|---|
| JP (1) | JP6412727B2 (en) |
| CN (1) | CN105216348A (en) |
| TW (1) | TWI658072B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110326086A (en) * | 2017-09-22 | 2019-10-11 | 吉奥马科技有限公司 | The manufacturing method of resin substrate laminated body and electronic equipment |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI631880B (en) * | 2016-08-30 | 2018-08-01 | 達邁科技股份有限公司 | Releaseable flexible substrate and method of manufacturing same |
| CN106159089B (en) * | 2016-08-22 | 2019-07-23 | 达迈科技股份有限公司 | Flexible base plate and its manufacturing method that can be release |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013168445A (en) * | 2012-02-14 | 2013-08-29 | Kaneka Corp | Support with peeling layer, substrate structure, electronic device, and method for manufacturing electronic device |
| JP2014100702A (en) * | 2012-10-25 | 2014-06-05 | Mitsubishi Chemicals Corp | Method for manufacturing laminate, laminate, device laminate, and device film |
| WO2014092015A1 (en) * | 2012-12-13 | 2014-06-19 | 旭硝子株式会社 | Electronic device manufacturing method, and glass laminate manufacturing method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4330525B2 (en) * | 2004-12-28 | 2009-09-16 | 旭化成イーマテリアルズ株式会社 | Deposition method for large pellicle |
| JP2013226784A (en) * | 2012-03-27 | 2013-11-07 | Toyobo Co Ltd | Laminate, method for manufacturing the same, and method for manufacturing device structure body using the same |
| WO2013191052A1 (en) * | 2012-06-20 | 2013-12-27 | 東洋紡株式会社 | Process for producing layered product, layered product, process for producing layered product with device using said layered product, and layered product with device |
| KR101709422B1 (en) * | 2012-11-08 | 2017-02-22 | 아사히 가세이 이-매터리얼즈 가부시키가이샤 | Substrate for flexible device, flexible device and method for producing same, laminate and method for producing same, and resin composition |
-
2014
- 2014-06-30 JP JP2014134398A patent/JP6412727B2/en not_active Expired - Fee Related
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- 2015-04-27 TW TW104113378A patent/TWI658072B/en not_active IP Right Cessation
- 2015-06-23 CN CN201510350436.8A patent/CN105216348A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013168445A (en) * | 2012-02-14 | 2013-08-29 | Kaneka Corp | Support with peeling layer, substrate structure, electronic device, and method for manufacturing electronic device |
| JP2014100702A (en) * | 2012-10-25 | 2014-06-05 | Mitsubishi Chemicals Corp | Method for manufacturing laminate, laminate, device laminate, and device film |
| WO2014092015A1 (en) * | 2012-12-13 | 2014-06-19 | 旭硝子株式会社 | Electronic device manufacturing method, and glass laminate manufacturing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110326086A (en) * | 2017-09-22 | 2019-10-11 | 吉奥马科技有限公司 | The manufacturing method of resin substrate laminated body and electronic equipment |
| CN110326086B (en) * | 2017-09-22 | 2021-02-12 | 吉奥马科技有限公司 | Resin substrate laminate and method for manufacturing electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6412727B2 (en) | 2018-10-24 |
| TWI658072B (en) | 2019-05-01 |
| JP2016011391A (en) | 2016-01-21 |
| TW201605942A (en) | 2016-02-16 |
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