TW201603870A - Dust collection tool, substrate processing device, and particle capture method - Google Patents

Abstract

Provided is a technique for removing micro-particles (100) in an atmosphere of a machine for semiconductor manufacturing engineering of a coating and display device or a transfer container so as to improve the purity of the atmosphere and provide an excellent operation efficiency for removing the micro-particles (100). For the transfer achieved with a substrate transfer mechanism applicable to a machine for semiconductor manufacturing engineering of a coating and display device or a transfer container, a space that is isolated with respect to the atmosphere by an isolation member (2) is formed on a surface of a substrate (10) that can be carried on a processing module, also, a piezoelectric blower (3) is provided in the space. A filter section (4) is formed in a part of the isolation member (2) to thereby constitute a dust collection substrate (1). With the transfer mechanism, the dust collection substrate (1) is transferred to the interior of the coating and display device, also, an airflow of the atmosphere of the transfer path or the processing module is conducted to the isolated space so as to pass through the filter section (4). As a result, the micro-particles (100) contained in the atmosphere of the coating and display device can be captured in the filter section (4).

Description

Dust collecting fixture, substrate processing device and particle capturing method

The present invention relates to the technical field of performing removal of particles in a substrate processing apparatus.

In the semiconductor manufacturing apparatus, in order to remove and suppress particles adhering to the member in the device or particles contained in the atmosphere, the particles are removed by a cleaning operation or the like in the wiping device at the time of starting the device or after the maintenance is completed. Further, in the operation of the semiconductor manufacturing apparatus, the internal atmosphere of the apparatus is kept clean by forming an air flow in the apparatus from the top plate portion of the apparatus. On the other hand, with the miniaturization of the line width of the pattern, the allowable value of the size or the number of particles per unit volume in the atmosphere in which the substrate such as a semiconductor wafer (hereinafter referred to as a wafer) is placed becomes strict. . Further, in recent years, by the progress of the microparticle inspection machine, it is possible to detect a fine particle diameter and to remove fine particles of a size of, for example, less than 30 nm.

Therefore, a technique for suppressing particulate contamination of a wafer has been sought. For example, in Patent Document 1, there is described a technique in which a foreign matter capturing capability (the foreign matter capturing capability is different from a silicon wafer) is described. After the cleaning member of the foreign matter capturing capability by the mirror surface conveyance is transported into the semiconductor manufacturing apparatus, the mirror surface of the crucible is conveyed, and the particles of the large particles are scattered to the small particles of the small particles in a wide range. However, the captured particles are limited to particles that are in contact with the cleaning member and the crucible wafer. Since the fine particles are low in gravity and difficult to settle, there is a problem in that the removal efficiency of fine particles suspended in the atmosphere is poor.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-238809

The present invention has been made in view of such circumstances, and it is an object of the present invention to provide a technique for removing fine particles in a device in which a substrate for semiconductor manufacturing is placed, thereby improving the cleanliness of the atmosphere.

The jig for collecting dust according to the present invention is used in a semiconductor manufacturing process, and is used for capturing fine particles contained in a device in which a substrate for semiconductor manufacturing is placed, and the jig for collecting dust is characterized in that: The substrate can be transported by a substrate transport mechanism that transports the substrate in the device; a filter disposed on the substrate and configured to capture particles contained in the gas stream; and a flow path for passing the gas stream through the filter.

The substrate processing apparatus of the present invention includes a substrate transfer mechanism (the substrate transfer mechanism is a transfer substrate) and a plurality of modules (the module includes a processing module on which a substrate is placed and processed) In the processing apparatus, the control unit includes a control unit that outputs a control signal to the dust collecting jig, and passes the airflow around the dust collecting jig through the filter to perform capturing of the particles in the atmosphere. step.

The particle trapping method of the present invention is used in a semiconductor manufacturing process, and includes a state in which the dust collecting jig is placed in a device (the device is provided with a substrate for semiconductor manufacturing) In the state in which the dust collecting jig is conveyed to the inside of the machine by the substrate transfer mechanism, the airflow around the dust collecting jig is passed through the filter to capture the particles in the atmosphere.

According to the present invention, when the fine particles in the device in which the substrate for semiconductor manufacturing is placed are removed, the dust collecting jig is placed in the state, or the dust collecting jig is transported by the substrate transfer mechanism. In the state of the machine, the airflow around the atmosphere is passed through a filter provided in the dust collecting jig, thereby capturing the particles in the atmosphere. Therefore, it has an effect of improving the cleanliness of the atmosphere and the efficiency of removing particles.

1‧‧‧ dust collecting substrate

2‧‧‧Dividing members

3‧‧‧ Piezoelectric blower

4‧‧‧Filter Department

5‧‧‧Liquid treatment module

6‧‧‧Heating-cooling module

10‧‧‧Substrate

40‧‧‧Electrostatic filter

90‧‧‧Control Department

99‧‧‧FFU

100‧‧‧ particles

W‧‧‧ wafer

Fig. 1 is a plan view showing a dust collecting substrate according to an embodiment of the present invention.

Fig. 2 is a perspective view showing a dust collecting substrate according to an embodiment of the present invention.

Fig. 3 is an exploded perspective view showing a dust collecting substrate according to an embodiment of the present invention.

Fig. 4 is a cross-sectional view showing the dust collecting substrate of the embodiment of the present invention taken along the line I-I'.

Fig. 5 is a cross-sectional view showing a piezoelectric blower according to an embodiment of the present invention.

Fig. 6 is an explanatory view showing the action of a piezoelectric blower.

Fig. 7 is an explanatory view showing the action of a piezoelectric blower.

FIG. 8 is an explanatory view showing an operation of the entire dust collecting substrate.

FIG. 9 is an explanatory view showing an operation of the entire dust collecting substrate.

Fig. 10 is an explanatory view showing a method of capturing fine particles by an electrostatic filter.

Fig. 11 is a perspective view showing a coating and developing device.

Fig. 12 is a longitudinal sectional view showing a coating and developing device.

Fig. 13 is a plan view showing a coating and developing device.

Fig. 14 is an explanatory view showing a control unit of a coating and developing device.

Fig. 15 is a flow chart showing a process of processing a wafer from start to start in a coating and developing device.

[Fig. 16] A view showing a method of capturing particles in a heating-cooling module Ming map.

Fig. 17 is a plan view showing a dust collecting substrate provided with a metal mesh for particle evaluation.

Fig. 18 is a plan view showing another example of the dust collecting substrate according to the embodiment of the present invention.

Fig. 19 is a cross-sectional view taken along line II-II' of another example of the dust collecting substrate according to the embodiment of the present invention.

Fig. 20 is a cross-sectional view showing another example of the dust collecting substrate according to the embodiment of the present invention.

Fig. 21 is a plan view showing still another example of the dust collecting substrate according to the embodiment of the present invention.

Fig. 22 is a sectional view taken along line III-III' of still another example of the dust collecting substrate according to the embodiment of the present invention.

Fig. 23 is a cross-sectional view showing still another example of the dust collecting substrate according to the embodiment of the present invention.

Fig. 24 is a cross-sectional view showing still another example of the dust collecting substrate according to the embodiment of the present invention.

Fig. 25 is a plan view showing still another example of the dust collecting substrate according to the embodiment of the present invention.

Fig. 26 is a sectional view taken along line IV-IV' of still another example of the dust collecting substrate according to the embodiment of the present invention.

When the embodiment of the dust collecting jig of the present invention is described, In the following embodiments, the dust collecting jig is referred to as a dust collecting substrate. As shown in FIG. 1 to FIG. 4, the dust collecting substrate 1 is provided with a substrate 10 as a circular glass plate, and a component to be described later is mounted on the substrate 10, and the substrate is provided with water repellency and moisture resistance. For example, a para-xylylene resin such as insulating or chemical resistance is applied. The substrate 10 is formed in accordance with the size and shape of the substrate to be processed (the substrate to be processed as the substrate processing apparatus using the dust collecting substrate 1), and is formed into a diameter corresponding to, for example, a 300 mm wafer. 300mm round. On the surface side of the substrate 10, two partition members 2 are provided symmetrically with respect to the diameter of the substrate 10. As shown in FIG. 3 and FIG. 4, the partition member 2 is configured such that one side of the rectangle is formed into an arc shape when viewed in plan, and the frame portion 20 is provided to form a space surrounding the partition. The side wall; and the filter portion 4 block the upper portion of the space. The frame portion 20 is provided to protrude from the surface of the substrate 10, and a step portion 21 is formed on the inner side of the frame portion 20 over the entire circumference. In the upper portion of the frame portion 20, a plurality of, for example, five claw portions 22 are provided at intervals in the circumferential direction of the frame portion 20, and the claw portions 22 are horizontally protruded toward the region surrounded by the frame portion 20, and It is used to lock the filter unit 4 which will be described later.

The filter unit 4 includes an electrostatic filter 40, and an upstream side mesh body 41 and a downstream side mesh body 42 are provided on the upper surface and the lower surface of the electrostatic filter 40, respectively. The electrostatic filter 40 is an electrostatic filter made of, for example, a fibrous electrostatic filter. The upstream side mesh body 41 and the downstream side mesh body 42 are each formed of a metal mesh having an outer frame 25 formed on the periphery thereof. The upstream side mesh body 41 is disposed in the inflow The surface passing through the side of the air flow of the filter unit 4 is formed on the upper surface in this example, and is composed of a metal mesh having a relatively small pressure loss. The downstream side net body 42 is provided on the surface of the filter unit 4 on the side where the airflow flows out. In this example, the lower surface is formed of a metal mesh having a fine mesh in order to adjust the pressure loss of the filter unit 4. Since the pressure loss of the electrostatic filter 40 is extremely small, the pressure loss is adjusted by the upstream side mesh body 41 and the downstream side mesh body 42, thereby covering the entire filter portion 4 and allowing the airflow to pass. Further, the filter unit 4 may be previously wetted by a liquid vaporized at a normal temperature such as pure water or an alcohol solvent in order to increase the humidity of the atmosphere and to cause the particles to easily settle.

The filter portion 4 is placed on the step surface of the step portion 21 and is inserted between the step surface and the claw portion 22 to be locked. Thereby, the inside of the frame portion 20 is blocked by the filter portion 4, and on the surface side of the substrate 10, a space partitioned by the partition member 2 with respect to the atmosphere is formed.

An opening 16 is provided in a region of the substrate 10 that is partitioned into the respective partition members 2. Above the respective opening portions 16, a piezoelectric blower 3 as a ventilation mechanism is provided. Returning to FIGS. 1 and 2, the piezoelectric blower 3 is connected to the circuit portion 12 for driving the piezoelectric blower 3 via the wiring 13 provided on the surface of the substrate 10, and the circuit portion 12 is provided on the substrate 10. The lithium ion battery 11 at the center of the front side is connected. Further, on the substrate 10, a communication unit 14 for wirelessly communicating with the outside is provided, and each operation of controlling the piezoelectric blower 3 is individually turned on and off via the circuit unit 12, for example, based on a signal transmitted from the outside.

In addition to FIG. 3 and FIG. 4, another description will be given with reference to FIG. 5. The piezoelectric blower 3 is provided with a main body portion 30 having a rectangular tube shape, and is provided with a discharge nozzle 32 for discharging the sucked gas on one surface, and a suction hole 31 for sucking the atmosphere gas is provided on the back side of the one surface. The piezoelectric blower 3 is provided such that the discharge nozzle 32 faces the opening portion 16.

The piezoelectric blower 3 is provided inside the main body portion 30 with a gas chamber 33 whose outer peripheral portion is fixed to the main body portion 30. The gas chamber 33 is formed in a rectangular tube shape, and a gas hole 36 is provided at a position corresponding to the discharge nozzle 32 on the upper surface side, and a lower surface of the gas chamber 33 is formed as a partition plate 35. On the lower surface side of the spacer 35, a piezoelectric plate 34 is provided. The piezoelectric plate 34 is vibrated by supplying an alternating voltage from the circuit unit 12, for example, based on a control signal transmitted from the outside via the communication unit 14.

As shown in FIG. 6, when the piezoelectric plate 34 vibrates and vibrates to the lower side, since the separator 35 is bent downward, the volume of the gas chamber 33 is increased, and the gas inside the body portion 30 is from the pores. 36 was inhaled. Next, as shown in FIG. 7, when the piezoelectric plate 34 vibrates toward the upper side, since the partition plate 35 is bent upward, the volume of the gas chamber 33 is reduced, and the gas is pushed out from the air hole 36, and The discharge nozzle 32 discharges gas. Moreover, since the air pressure inside the main body portion 30 is lowered so that the gas is discharged from the discharge nozzle 32, the gas is sucked from the suction hole 31. In this example, when the separator 35 is bent downward, the gas sucked from the suction hole 31 is wound around the gas hole 36 through the periphery of the gas chamber 33 inside the main body portion 30, and is attracted to the gas chamber 33. Inside. Therefore, the suction hole 31 and the periphery of the gas chamber 33 inside the main body portion 30 and the discharge nozzle 32 correspond to the flow path.

Next, the operation of the entire dust collecting substrate 1 will be described with reference to Figs. 8 to 10 . When the current is supplied to the piezoelectric blower 3, as described above, the piezoelectric blower 3 starts to suck from the suction hole 31, and as shown in Fig. 8, the inside of the partition member 2 is formed into a negative pressure. When the space partitioned by the partition member 2 is formed into a negative pressure, as shown in FIGS. 8 and 9, the atmosphere containing the fine particles 100 on the upper side of the dust collecting substrate 1 is based on the upstream side mesh body. 41. The electrostatic filter 40 and the downstream side mesh body 42 (in FIGS. 8 and 9, the upstream side mesh body 41, the electrostatic filter 40, and the downstream side mesh body 42 are omitted for convenience) It is sucked into the internal space of the partition member 2 by the passage.

As shown in FIG. 10, the electrostatic filter 40 is provided with a structure in which an electrostatic filter 43 is bonded, and a portion having a +polar charge and a portion having a polarity-charge are formed in the electrostatic filter 43. Therefore, the charged particles of the + or - polar charge in the particles 100 to be passed through the electrostatic filter 40 are adsorbed to the electrostatic filter 43 constituting the electrostatic filter 40 by the Coulomb force. Further, when the electrostatically-charged particles are not in contact with the electrostatic filter material 43, the particles are attracted to the electrostatic filter material 43 by the dielectric force. Therefore, when the atmosphere of the dust collecting substrate 1 passes through the filter unit 4, the fine particles 100 contained in the atmosphere are adsorbed to the filter unit 4 and captured as shown in FIGS. 8 and 9 . In addition, the atmosphere after the fine particles 100 are collected is sucked into the partition member 2 by the filter unit 4, and then sucked into the piezoelectric blower 3 and discharged from the discharge nozzle 32, and is discharged to the lower side of the substrate 10 via the opening 16. Exhaust on the side. In this way, the atmosphere containing the fine particles 100 is passed through the filter unit 4 to be captured. Therefore, it is also possible to efficiently capture light weight Fine particles 100 which are difficult to settle.

An example of a substrate processing apparatus that uses a dust collecting substrate 1 according to an embodiment of the present invention to capture particles, and which is applied to a coating and developing apparatus, first, referring to FIGS. 11 to 13 , coating and display will be described. The composition of the device. The coating and developing device is configured to linearly connect the carrier block B1, the processing block B2, and the interface block B3. In the interface block B3, the exposure station B4 is further connected.

The carrier block B1 has a function of loading and unloading the carrier C (for example, FOUP) as a transport container including a plurality of wafers W into the apparatus, and is provided with a mounting platform 91 of the carrier C; a cover portion 92; The transfer arm 93 transports the wafer W from the carrier C via the lid portion 92.

The processing block B2 is configured by sequentially stacking the first to sixth unit blocks D1 to D6 for liquid processing the wafer W from the bottom, and each of the unit blocks D1 to D6 has substantially the same configuration. In Fig. 11, the letter characters assigned to the respective unit blocks D1 to D6 represent the processing type, the BCT represents the reflection preventing film forming process, and the COT represents the photoresist which forms the photoresist to the wafer W to form the photoresist film. Film formation processing, DEV stands for development processing.

In FIG. 13, the unit block D3 is represented, and the unit block D3 is provided with a main arm portion A3 which is linear from the carrier block B1 side toward the interface block B3. The transfer unit R3 moves; the coating unit 80 includes a liquid processing module 5 (5a to 5e) as a coating film forming device, and a scaffold unit U1 to U6 stacked to heat and cool the wafer W. Heating ~ cooling module 6 (6a ~ 6f).

On the side of the carrier block B1 of the transport area R3, A scaffolding unit U7 composed of a plurality of processing modules stacked. The transfer of the wafer W between the transfer arm 93 and the main arm portion A3 is performed by the processing module of the scaffolding unit U7 and the transfer arm 94.

The interface block B3 is used to carry the wafer W between the processing block B2 and the exposure station B4, and is provided with the scaffolding units U8, U9, and U10 (the scaffolding units are stacked on each other in plural) Processing modules). In addition, in the figure, 95 and 96 are respectively used for carrying the wafer W between the scaffolding units U8 and U9 and between the scaffolding units U9 and U10, and 97 is used for the scaffolding unit. A transfer arm that transfers the wafer W between U10 and the exposure station B4. The main arm portions A1 to A6 and the transfer arms 93 to 97 correspond to a substrate transfer mechanism.

Specific examples of the processing modules provided in the scaffolding units U7, U8, U9, and U10 include the following modules and the like, including the above-described receiving module TRS, which is used in the unit area. When the wafer W is received between the blocks D1 to D6; the temperature adjustment module CPL is used for temperature adjustment of the wafer W; the buffer module BU is for temporarily storing a plurality of wafers W; and the hydrophobization mold The group ADH, which hydrophobizes the surface of the wafer W. For the sake of simplicity, the illustration of the hydrophobization treatment module ADH, the temperature regulation module CPL, and the buffer module BU will be omitted.

At the top of the coating and developing device, as shown in Fig. 12, an FFU (Fan Filter Unit) 99 is provided. The FFU 99 is formed in a casing constituting the carrier block B1 to form a descending airflow of clean air, and is provided to suppress adhesion of particles or the like to the wafer W. In the other blocks B2 and B3, although a mechanism for forming a descending airflow of a clean gas in the atmosphere is provided, The description is omitted. Examples of the clean gas include an inert gas such as clean air or nitrogen gas that passes through a ULPA (Ultra Low Penetration Air) filter or a HEPA (High Efficiency Particulate Air) filter.

The outline of the transport path of the wafer W in the system composed of the coating, developing device, and the exposure station B4 will be briefly described. The wafer W is processed in the following order: carrier C→transport arm 93→receiving module TRS of scaffolding unit U7→transporting arm 94→receiving module TRS of scaffolding unit U7→unit block D1 ( D2)→Unit block D3(D4)→Interface block B3→Exposure station B4→Interface block B3→Unit block D5(D6)→Training module TR7→Transport arm 93→Carrier C .

The coating and developing device includes a control unit 90. The control unit 90 includes a recipe storage unit 112 connected to the bus bar 110 and a recipe selection unit 113, as shown in FIG. In the recipe storage unit 112, a process recipe 115, a static elimination recipe 116, a curing recipe 117, and a dust collection recipe 118 are stored. The process recipe 115 is a formulation for processing the substrate of the product. The static elimination formula 116, the curing recipe 117 and the dust collection formula 118 are used to perform pre-treatment at the start of the device or after the maintenance is completed (the pre-treatment is performed before the execution of the process recipe 115 or between the batches of the wafer W). ) formula.

The static elimination recipe 116 is a formulation for discharging the substrate for removing electricity into the device to remove electricity from the device. The aging recipe 117 is a formulation for processing a transfer arm or a coating unit in a state where it is more severe than a general operation for transferring and processing the wafer W. The driving unit such as the nozzle moving mechanism in the 80 operation does not perform the continuous operation such as the transfer and processing of the wafer W, and the particles are wound into the atmosphere. The dust collection formula 118 is used to carry the dust collecting substrate 1 into the apparatus, and to operate the piezoelectric blower 3 to capture the fine particles in the apparatus, and to write the transfer order or piezoelectric of the dust collecting substrate 1. The timing of turning on and off the blower 3, and the like. The recipe is a software in which the order is described in time series, and the CPU 111 reads the sequence described in the recipe and outputs a control signal.

Further, the recipe selection unit 113 includes, for example, a software switch or a mouse, and the recipe selection unit 113 selects a recipe from the recipe storage unit 112. Further, the control unit 90 includes a communication unit 114, and the control signal generated based on the dust collection recipe 118 is transmitted to the communication unit 14 of the dust collecting substrate 1 via the communication unit 114. Therefore, the operation of the piezoelectric blower 3 of the dust collecting substrate 1 is controlled by the control unit 90.

Next, a series of pre-processing projects performed before starting the processing of the product wafer W as the substrate to be processed will be described with reference to the flowchart shown in FIG. 15 at the time of starting the coating, the developing device, or the maintenance. . First, in step S1, the lid of the coating and developing device is opened, and internal wiping, air blowing, and air vacuum are performed to remove large dirt or deposits such as the respective processing modules or transport paths. Next, the lid of the coating and developing device is closed, and the FFU 99 and a filter unit (not shown) are driven to form a downflow of the clean gas inside the coating and developing device.

Next, in step S2, the coating and developing device are removed. The charge carried by each component inside. This static elimination process is performed by selecting the method of selecting the static elimination recipe 116 by the recipe selection unit 113 shown in FIG. 14 , and the substrate transfer mechanism is taken out from the storage unit in the application and development device, for example. The well-removed substrate is transported inside the coating and developing device. The charge removing substrate is a substrate including an ion generating electrode (the ion generating electrode is composed of, for example, a dielectric electrode, a discharge electrode, and a dielectric sandwiched between the dielectric electrode and the discharge electrode), and The substrate transfer mechanism is transported inside the coating and developing device and placed on each processing module, thereby removing the charge carried by each processing module or substrate transfer mechanism. When the inside of the coating and developing device is charged, the particles 100 are attracted to the charged portion by the Coulomb force, so that it becomes difficult to remove the particles. By removing the charges carried in the coating and developing device, the particles 100 become easily released from the member, and the removal of the particles 100 is facilitated.

Then, the aging mode (the aging mode is such that the drive units in the processing modules of the coating and developing device or the drive unit in the substrate transfer mechanism are continuously operated in succession) is operated for a certain period of time (step S3). The aging mode is performed by the recipe selecting unit 113 selecting the aging recipe 117, and the fine particles 100 adhering to the driving unit are discharged to the atmosphere.

In this aging mode, in this example, the formulation is set such that the operating speed of the driving unit is faster than the operating speed of the driving unit when the product wafer W is processed and processed, or the driving unit is driven. The recipe is set by continuously and repeatedly repeating the predetermined number of times. About this repetition The number can be set, for example, by the operator by an operation screen to an arbitrary number of times. Further, when the operation of the drive unit is continuously repeated, the recipe can be set more quickly than the operation speed of the drive unit when the wafer W is transported and processed. Compared with the case where the product wafer W is transported and processed, the drive unit generates a situation in which the fine particles 100 are likely to occur in advance, and the fine particles 100 scattered in the atmosphere are captured in the next process. As a result, there is an advantage that when the product wafer W flows in the coating developing device, the particles 100 can be further suppressed from flying.

Then, in step S4, the dust collecting substrate 1 is used to remove the fine particles 100 in the coating and developing device. This process is carried out by placing the carrier C containing the dust collecting substrate 1 on the mounting platform 91, and selecting the dust collecting recipe 118 by the recipe selecting unit 113 shown in FIG. The dust collecting substrate 1 in the carrier C is taken out by the transfer arm 93, and is transported in the path written to the dust collecting recipe 118, and transported to the coating and developing image in the same path as the product wafer W, for example. Inside the device. The piezoelectric blower 3 is turned on, for example, from the time when the dust collecting substrate 1 is taken out from the carrier C by the transfer arm 93, and is started to perform the ventilating operation, and is closed before returning to the carrier C via the predetermined transport path. At which point in time the piezoelectric blower 3 is turned on and at which time point is turned off, an appropriate timing can be set in the dust collecting recipe 118. For example, when the carrier C containing the dust collecting substrate 1 is placed on the coating and developing device, the piezoelectric blower 3 may be opened to capture the particles in the carrier C. In this way, the particles in the carrier C (in this example, the FOUP) for transporting the wafer W can be captured, and the carrier C can be cleaned. Moreover, the time during which the piezoelectric blower 3 is turned off may be set in the middle of the transport path. Interval. Further, the magnitude of the alternating current applied to the piezoelectric blower 3 may be adjusted in the middle of the transport path to change the amount of attraction of the piezoelectric blower 3, or a plurality of piezoelectric blowers 3 may be individually turned on and off. .

Moreover, the time in which the dust collecting substrate 1 is carried into the processing module is set so that the fine particles can be efficiently captured, and sufficient time can be grasped in advance. Although the dust collecting substrate 1 carried in the coating and developing device from the carrier C may be one piece, the plurality of dust collecting substrates 1 may be carried into the coating and developing device to be dispersed. In the case where the particles are captured in parallel, in this case, it is expected to shorten the time for the removal of the particles. The capture of the fine particles by the dust collecting substrate 1 is not limited to the operation after the aging mode in the step S3, and the squeezing substrate 1 is placed on the substrate transport mechanism, for example, in a state where the dust collecting substrate 1 is placed. Fast action, while implementing.

Here, as an example of the state in which the fine particles 100 in the coating and developing device are captured by the dust collecting substrate 1, the heating-cooling module 6 is taken as an example and shown in FIG. The heating-cooling module 6 is provided with a heating plate 62 and a cooling plate 61 in the casing 60, and the cooling plate 61 is configured between the receiving position of the main arm portion A3 and the upper position of the heating plate 62. It can be moved along the guide rail 79 by the moving mechanism 69 including the driving portion. The heating plate 62 is provided with a heater 68 therein, and the wafer W between the cooling plate 61 and the cooling plate 61 is passed through a lifting pin (not shown) that passes through the heating plate 62. A loading/unloading port 64 is provided on a side surface of the casing 60 on the side of the cooling plate 61, and a loading/unloading port 64 is provided in the loading and unloading port 64. The outlet 64 is a switch 65 for switching. Further, in the casing 60, a nitrogen gas supply portion 84 for supplying nitrogen gas as an inert gas to the top is provided. Further, an exhaust portion 104 is provided on the bottom surface of the casing 60, and the exhaust portion 104 is connected to the exhaust pump 106 via the exhaust pipe 105.

Thereby, an air flow is formed from the top to the bottom. As shown in FIG. 16, when the dust collecting substrate 1 is placed on the cooling plate 61, the temperature of the atmosphere of the dust collecting substrate 1 becomes low, and the inside of the heating-cooling module 6 is The atmosphere flows toward the dust collecting substrate 1. Therefore, the fine particles 100 can be efficiently captured by placing the dust collecting substrate 1 on the cooling plate 61 and capturing the fine particles 100. Further, the atmosphere passing through the filter unit 4 is exhausted to the lower side or the side of the dust collecting substrate 1 via the piezoelectric blower 3.

Further, although the fine particles 100 are light in weight, it is difficult to settle by gravity, but the particles 100 are lowered by the flow of the flushing gas formed in the casing 60. Further, since the alcohol permeating into the filter portion 4 is vaporized, the humidity around the dust collecting substrate 1 is locally increased. When the moisture of the atmosphere rises and the moisture is adsorbed by the moisture or the like, the particles 100 become easy to settle, and can be efficiently captured. Further, the exhausting method in the heating-cooling module 6 may be a method of forming a lateral airflow in one direction from the loading/unloading port 64 of the casing 60 toward the inside.

Moreover, the release of the fine particles 100 by the maturation mode of the step S3 and the coating by the dust collecting substrate 1 of the step S4 and the removal of the fine particles 100 in the developing device are repeated a plurality of times, for example, three times. It is carried out until the fine particles 100 that have penetrated into the detail are removed. In the situation In the case where the dust collecting substrate 1 is returned to the carrier C, the ripening formula 117 and the dust collecting formula 118 are again selected. Alternatively, for example, after the end of the static elimination recipe 116, the ripening recipe 117 and the dust collection recipe 118 are selected, and the set number of repetitions is input on the operation screen, whereby the system is configured by repeating only two recipe setting times. . Further, the bare wafer may be continuously transferred between step S3 and step S4 or after step S4.

Then, as step S5, evaluation of the particle density using the bare wafer for evaluation is performed. In this project, the bare wafer for evaluation is transferred to the coating and developing device in the same process as the wafer W for the product. After each evaluation bare wafer is returned to the carrier C, the particles attached to the surface of the bare wafer, for example, the evaluation of the number of attachments per unit area, are evaluated by, for example, a particle inspection machine, thereby determining the coating and developing device. Whether the density of the particles inside reaches the reference value. At this time, if it is determined that the fine particles are sufficiently removed when the reference value is reached, the processing of the product wafer W is started (step S6). When it is determined that the fine particles have not been sufficiently removed, the step S3 and the step S4 are performed again, and then the evaluation of the particle density of the bare wafer for evaluation by the step S5 is performed to determine whether or not the reference is reached. value.

The collected dust collecting substrate 1 returned to the fine particles 100 of the carrier C can be washed, for example, every time. The dust collecting substrate 1 is caused by, for example, blocking the filter portion 4 due to the trapping of the fine particles 100, or contaminating the coating or the inside of the developing device due to the particles 100 adhering to the substrate 10. Therefore, the lithium ion battery 11 and the partition member 2 are detached from the substrate 10 of the dust collecting substrate 1 after the particle capturing. Moreover, the substrate 10 can also be washed. The lithium ion battery 11 and the partition member 2 after the replacement of the new filter unit 4 are installed.

Moreover, the degree of contamination of the filter unit 4 of the dust collecting substrate 1 can be confirmed by using the particle inspection device described later, and when the allowable value is exceeded, the filter unit 4 is replaced. The degree of contamination can be set to, for example, a value corresponding to the volume of the entire particles attached to the filter unit 4. Further, the dust collecting substrate 1 can be transported to the particle inspection device to confirm the degree of contamination, and can be returned to the processing module again.

According to the above-described embodiment, the dust collecting substrate 1 is carried into the coating and developing device, and is transported by the substrate transporting mechanism, and is carried into each module to pass the airflow in the atmosphere of the coating and developing device. The filter unit 4 captures the particles 100 in the atmosphere. Therefore, the capture of the particles can be performed while the device is turned off, and the cleanliness of the atmosphere can be improved. Moreover, since the fine particles 100 can be captured by a simple method without manual operation and without a large work, the work efficiency is good.

Further, in step S4, after the dust collecting substrate 1 is carried into the coating and developing device and the set of processing works is completed, the number of particles is evaluated, and the degree of contamination in the coating and developing device is confirmed (clean degree). Further, after the degree of contamination of the coating and developing device becomes equal to or less than the allowable value, it is possible to evaluate in detail whether or not the reference value is reached by the bare wafer for evaluation in step S5. For example, as shown in FIG. 17, a hole portion (not shown) through which the dust collecting substrate 1 is inserted is provided, and the metal mesh 89 is fitted into the hole portion. Further, for example, the scaffolding unit U7 in the coating and developing device is provided with an inspection device (not shown) for evaluating the number of particles.

Inspection device, using, for example, megahertz time domain spectrum Analytical methods to assess the degree of contamination of well-known inspection devices. The inspection device irradiates the metal mesh 89 with, for example, electromagnetic waves (20 GHz to 120 THz) from the vertical direction to obtain a dip waveform (the dip waveform is a penetration spectrum of electromagnetic waves appearing through the metal mesh 89). Medium) The frequency of occurrence. Moreover, the rate of change of the frequency of the following is obtained, which includes: the frequency of the dip waveform appearing in the penetration spectrum at the frequency of the electromagnetic wave penetrating the metal mesh 89 to which the particle is attached; and the sudden drop in the transmission spectrum The waveform is at a frequency that penetrates the electromagnetic waves of the metal mesh 89 to which the particles are not attached. When the particles adhere to the metal mesh 89, since the capacity and inductance of the electromagnetic wave path change, the absorption spectrum of the electromagnetic wave that penetrates changes, and the frequency of the penetration spectrum changes. Since the rate of change of the frequency varies depending on the total volume of the particles attached to the metal mesh 89, it can be used as a degree of contamination in the coating and developing device.

For example, in step S4, when the dust collecting substrate 1 is returned to the carrier C, it is taken from the unit block D6 to the scaffolding unit U7, and then carried into the inspection device by the transfer arm 94. In the inspection apparatus, electromagnetic waves are irradiated toward the metal mesh 89 provided on the dust collecting substrate 1, and it is known that the dust collecting substrate 1 adheres to the particles of the metal mesh 89 when a series of fine particles are captured in the coating and developing device. The amount (total volume) is known to the extent of contamination in the coating and developing device.

Therefore, a rate of change corresponding to the frequency of the degree of cleanliness in the coating and developing device determined to have no problem in the processing of the wafer W is determined as a reference value in advance, and the particle is captured after the step S4 is performed. Comparing the frequency change of the metal mesh 89 for the dust collecting substrate 1 The degree of contamination in the coating and developing device is determined by the conversion rate and the reference value.

Further, when the degree of contamination in the coating and developing device is determined to be sufficiently lowered, the amount of fine particles can be evaluated by the bare wafer for evaluation in step S5. Then, when it is determined that the reference value is reached, the wafer W is processed.

Further, by examining the particles attached to the dust collecting substrate 1 by the inspection device and evaluating the degree of contamination in the coating and developing device, the dust collecting substrate 1 returned to the carrier C can be transported to the inspection for independent operation. The device is evaluated for the degree of contamination. As the object of the evaluation of the degree of contamination, it is also possible to detect the mist which is scattered in the coating unit 80 or the grease generated from each driving unit.

In the above-described example, the aging mode of step S3 causes the driving unit to drive together to generate the fine particles 100. However, in the aging mode, the virtual wafer can be transferred in the same process as the product wafer W, and In the processing module and the substrate transfer mechanism, the drive unit is operated. Further, the driving unit provided in the coating and developing device may be operated in parallel with the step of capturing the fine particles 100 in step S4. In the aging mode, in order to actively generate particles, for example, the conduction/disconnection of the flushing gas of the heating-cooling module 6 or the increase or decrease of the flow rate, the increase and decrease of the suction amount of the exhaust pump 106, and the conduction of the FFU 99 may be performed. Disconnection or increase or decrease of flow, system fan conduction, disconnection or flow increase or decrease. Further, the temperature of the heater 68 or the cooling mechanism of the heating-cooling module 6 may be set to a temperature other than the processing temperature, and the temperature or humidity may be changed in the casing 60.

The dust collecting substrate 1 of the step S4 is used to remove the coating and the fine particles inside the developing device, and the plurality of dust collecting substrates 1 can be carried into the coating and developing device. For example, 25 pieces of the dust collecting substrate 1 are housed in the carrier C and placed on the mounting platform 91. Further, for example, the dust collecting substrate 1 may be taken out in order and carried into the coating and developing device, and the dust collecting substrate 1 may be transported in accordance with the above-described work, and the particles may be carried out in each of the processing modules and the transporting region. Capture.

For example, the dust collecting substrate 1 taken out from the first sheet is transported in the same order as the wafer W processed in the first sheet, and sequentially carried into each processing module to capture fine particles. In this way, each of the dust collecting substrates 1 is transported in the same transport path as the wafer W located on the corresponding step in the group of the product wafers W in the carrier C, and is captured in each processing module. particle. Taking the unit block D3 as an example, the first dust collecting substrate 1 is carried into, for example, the liquid processing module 5a and the heating-cooling module 6a, and the particles are captured in each processing module. Next, the second dust collecting substrate 1 is carried into the liquid processing module 5b and the heating-cooling module 6b, and the particles are captured by the respective processing modules. Further, the fifth dust collecting substrate 1 is carried into the liquid processing module 5a and the heating-cooling module 6e, and the particles are captured by the respective processing modules. In this manner, the dust collecting substrate 1 is carried into all the processing modules in the coating and developing device to remove the fine particles. In such a case, since the plurality of dust collecting substrates 1 can simultaneously capture the fine particles 100 in the plurality of processing modules, the particles can be removed more efficiently.

Hereinafter, a modification of the dust collecting substrate 1 will be described.

The piezoelectric blower 3 is not limited to being disposed directly below the filter unit 4, and may be disposed at a portion that is offset from the projection area of the filter unit 4. 18 and FIG. 19 show an example in which four sets of the filter unit 4 and the frame unit 20 are arranged at equal intervals in the circumferential direction of the substrate 10, and the substrate 10 of each frame unit 20 is provided. One end of the communication path member 39 is connected near the center. In addition, the piezoelectric blower 3 is provided adjacent to each of the filter units 4, and one of the suction side (suction hole 31 side) and the discharge side (discharge nozzle 32 side) is the upper side and the other side is the lower side. The piezoelectric blower 3 is disposed, and an opening portion 16 is formed at a portion facing the substrate 10 on the lower side. The upper side of the piezoelectric blower 3 is covered by a covering body 37 with a space interposed therebetween, and the other end of the above-described communicating path member 39 is connected to the covering body 37. Therefore, the space on the lower side of the filter unit 4 and the space on the lower side of the cover 37 that communicates with the space are formed so as to be separated from the space in which the dust collecting substrate 1 is disposed. In this example, the filter unit 4 and the frame The portion 20, the communication path member 39, and the covering body 37 correspond to a partition member.

For example, when the suction side of the piezoelectric blower 3 is placed on the upper side and the discharge side is on the lower side, the frame portion 20 is sucked via the communication path member 39 and the cover 37 by driving the piezoelectric blower 3 Since the negative pressure is formed in the area surrounded by the filter unit 4, the atmosphere around the dust collecting substrate 1 is sucked into the frame portion 20 and the filter unit 4 through the filter unit 4. Then, the atmosphere of the fine particles 100 is removed, and the air is blown from the opening 16 to the lower surface side of the substrate 10 via the communication path member 39, the cover 37, and the piezoelectric blower 3. Even if it is constructed like this At the time of the formation, since the fine particles 100 contained in the atmosphere of the dust collecting substrate 1 can be removed, the same effect can be obtained.

In addition, when the suction side of the piezoelectric blower 3 is placed on the lower side and the discharge side is on the upper side, the atmosphere around the dust collecting substrate 1 is sucked from the lower side of the substrate 10 by the piezoelectric blower 3 The discharge is performed below the filter unit 4, and when the pressure on the lower side of the filter unit 4 is increased, it flows to the upper side. Even when the configuration is performed as described above, since the fine particles 100 are captured by the filter unit 4 in the atmosphere, the same effect can be obtained.

Further, as a modification of the dust collecting substrate shown in FIGS. 18 and 19, as shown in FIG. 20, the opening portion 15 is provided on the substrate, and the filter portion 4 faces the opening portion 15, and the filter portion 4 is provided in the filter portion 4. On the upper surface, the plate body 29 is disposed with a gap therebetween, and the frame portion 20 surrounds the periphery of the plate body 29. In this case, the atmosphere that is sucked from below the substrate 10 by the piezoelectric blower 3 flows into the upper side of the filter unit 4 via the cover 37 and the communication path member 39. Further, the filter unit 4 flows from the upper side toward the lower side, and flows out to the lower side of the substrate 10.

As another modification of the dust collecting substrate 1, as shown in FIGS. 21 and 22, the lithium ion battery 11, the circuit portion 12, the wiring 13, and the piezoelectric blower 3 may be provided on the surface of the substrate 10, and the filter portion may be provided. 4 to cover the top of the components. For example, the frame portion 20 is provided on the entire circumference of the peripheral portion of the substrate 10. The filter unit 4 is provided inside the frame portion 20 so as to block the space surrounded by the frame portion 20. When configured as described above, the piezoelectric blower 3 is driven, and the filter portion 4 is shaped below. The negative pressure is generated, and the airflow passing through the filter unit 4 from the upper side toward the lower side is generated, and the atmosphere passing through the filter unit 4 is exhausted to the lower surface side of the substrate 10 by the piezoelectric blower 3. Therefore, the particles 100 contained in the atmosphere can be captured.

Further, as a modification of the dust collecting substrate 1, as shown in FIG. 23, the atmosphere may be sucked from the upper surface side of the substrate 10 and flowed out toward the upper surface side of the substrate 10. For example, the filter unit 4 blocks the upper surface of the frame portion 20, and the opening portion 23 is provided on the side surface of the frame portion 20. The piezoelectric blower 3 is provided on the surface side of the substrate 10 so that the suction hole 31 faces the upper surface side, and a flow is provided between the substrate 10 and the piezoelectric blower 3 so as to face the discharge nozzle 32 side of the substrate 10. Road member 38. In this case, the gas discharged from the discharge nozzle 32 is configured to be guided into the opening 23 .

As a modification of the dust collecting substrate 1 shown in FIG. 23, an opening portion may be formed in the substrate 10, and the filter portion 4 may face the opening portion, and the plate body may be disposed on the upper surface of the filter portion 4 with a gap therebetween. Further, a flow path is formed so as to surround the periphery of the plate body and allow the airflow to flow into the filter portion 4. That is, in Fig. 23, a plate body is provided at a position where the filter portion 4 is provided, and the filter portion 4 is provided below. Moreover, as another modification of such an example, an opening may be formed in a lower portion of the piezoelectric blower 3 of the substrate 10, and the airflow may flow through the opening and the piezoelectric blower 3.

Further, as a modification of the dust collecting substrate 1, the filter unit 4 is not limited to the configuration in which the airflow passes through the thickness direction, and a plurality of sheets may be laminated, for example. The electrostatic filter 40 is introduced into the air flow from the side surface of the laminated electrostatic filter 40. For example, as shown in FIG. 24, the periphery of the laminated electrostatic filter 40 is surrounded by the frame portion 20, and the vent opening 45 is provided at two places facing each other in the frame portion 20, and the frame portion 20 is blocked by the plate body 29. The filter unit 4 composed of the stacked electrostatic filters 40 is housed inside the enclosed area.

Further, similarly to the dust collecting substrate 1 shown in FIG. 23, the atmosphere is discharged to the one vent port 45 by the piezoelectric blower 3 and the flow path member 38. The atmosphere that flows in from one of the vents 45 passes through the filter unit 4 from the side surface and flows out from the other vent port 45. When configured in this manner, the atmosphere on the upper surface side of the substrate 10 is attracted to the piezoelectric blower 3, and is discharged toward the filter unit 4. The discharged atmosphere flows in from one of the vents 45, passes through the filter unit 4, and flows out from the other vent 45. Therefore, when passing through the filter unit 4, the particles 100 contained in the atmosphere can be captured.

The dust collecting substrate 1 may have a configuration in which the piezoelectric blower 3 is not provided. For example, as shown in FIG. 25, the frame portion 20 and the filter portion 4 shown in FIG. 23 are provided at four positions in the vicinity of the periphery of the substrate 10 in the circumferential direction, and the opening portion 23 is directed toward the dust collecting substrate 1. The center side. When the configuration is as described above, as shown in FIG. 26, the atmosphere of the dust collecting substrate 1 is, for example, a downflow for air cleaning (the air cleaning is used to form a coating and developing device by the FFU 99). The inside is passed through the filter unit 4 from the upper side toward the lower side. The atmosphere passing through the filter unit 4 is exhausted from the opening 23 toward the upper surface side of the substrate 10. Even when it is constructed like this, Since the atmosphere of the dust collecting substrate 1 can pass through the filter unit 4, the fine particles 100 contained in the atmosphere of the dust collecting substrate 1 can be captured.

Further, as another example of the dust collecting substrate in which the piezoelectric blower 3 is not provided, the filter unit 4 may be partitioned below, and the partition space may communicate with the lower surface side of the substrate via the opening formed in the substrate.

It is also possible to provide an ion generating electrode on the dust collecting substrate 1 to capture fine particles and perform static elimination in the apparatus. In this case, for example, an ion generating electrode is provided on the dust collecting substrate 1 (the ion generating electrode is composed of a dielectric electrode, a discharge electrode, and a dielectric sandwiched between the dielectric electrode and the discharge electrode) . When a voltage is applied to the ion generating electrode, ions are generated, and when the ions come into contact with the charged portion of the processing module, the discharge can be caused, so that the static elimination can be performed. First, a voltage is applied to the ion generating electrode of the dust collecting substrate 1 and transported to the coating and developing device, and the static elimination process of step S2 is performed. Next, after step S3 is performed, in step S4, the dust collecting substrate 1 is again conveyed to the coating and developing device to capture the fine particles. Further, in step S4, while applying a voltage to the ion generating electrode and performing static elimination in the apparatus, the particles may be captured, and each time the dust collecting substrate 1 is placed on the processing module or the carrying arm. First, the static elimination is performed, and then the piezoelectric blower 3 is driven to capture the particles.

As the filter used for the filter unit 4 of the dust collecting substrate 1, a chemical filter which is composed of, for example, an ion (anion, cation) exchange resin, activated carbon or the like can be used. Thereby, the alkaline gas, the acid gas or the organic gas can be efficiently captured. Particles composed of molecular pollutants. Further, the chemical filter may be combined with the electrostatic filter 40.

Further, the substrate 10 which is a constituent element of the present invention is a structure which supports the filter portion 4, but also includes a structure having a non-plate shape. Moreover, the material of the substrate 10 may be tantalum, glass epoxy, ceramic, reinforced plastic, glass fiber or carbon fiber.

The object of the aging mode of the step S3 of the present invention or the cleaning of the atmosphere by the fine particles of the dust collecting substrate 1 is not limited to the coating and developing device described above, and is used for semiconductor manufacturing engineering. The machine can be. For example, it may be a sealed transfer container such as a FOUP or another liquid processing device such as a cleaning device, an etching device, a film forming device, a substrate bonding device, an exposure device, an inspection device, or the like. Further, the semiconductor manufacturing engineering is not limited to a process for forming a semiconductor device on a semiconductor wafer, and may be a process for manufacturing a liquid crystal panel by forming a transistor on a glass substrate.

1‧‧‧ dust collecting substrate

2‧‧‧Dividing members

3‧‧‧ Piezoelectric blower

10‧‧‧Substrate

11‧‧‧Lithium-ion battery

12‧‧‧ Circuit Department

13‧‧‧Wiring

14‧‧‧Communication Department

16‧‧‧ openings

Claims (17)

A dust collecting jig for use in a semiconductor manufacturing process for capturing fine particles contained in a device in which a substrate for semiconductor manufacturing is placed, and the jig for dust collecting is characterized in that: The transport can be carried out by a substrate transport mechanism that transports the substrate in the device; the filter is disposed on the substrate to capture particles contained in the airflow; and a flow path for passing the airflow through the filter. The dust collecting jig according to the first aspect of the invention, wherein the flow path is configured such that the airflow passes through the filter in the vertical direction. The dust collecting jig according to the first or second aspect of the invention, wherein the flow path of the airflow is configured to take in airflow from one side of the substrate and the other side, and to blow the airflow from the other side. The dust collecting jig according to claim 1 or 2, further comprising: a ventilation mechanism for forming the airflow in the flow path. The dust collecting jig according to the fourth aspect of the invention, wherein the ventilation mechanism is disposed on a lower side of the filter. The jig for collecting dust according to the fourth aspect of the invention, wherein the substrate is formed with an atmosphere relative to the inside of the machine. The filter and the venting mechanism form a part of the partition member by a space partitioned by the partition member. The dust collecting jig according to claim 6, wherein the filter is provided in plural, and each of the plurality of filters is provided with the space and the ventilation mechanism. The dust collecting jig according to claim 1 or 2, wherein a plurality of the filters are disposed at a position closer to a peripheral edge side of the substrate than a central portion of the substrate. The dust collecting jig according to the first or second aspect of the invention, wherein the first mesh-shaped body is provided on the inflow side of the air flow of the filter, and the outflow side of the air flow of the filter is provided The second mesh having a mesh that is finer than the first mesh. A substrate processing apparatus includes a substrate transfer mechanism (the substrate transfer mechanism is a transfer substrate) and a plurality of modules (the module includes a processing module on which a substrate is placed and processed) In addition, the control unit is configured to: output a control signal to the dust collecting jig according to any one of the first to ninth aspects of the patent application, and pass the airflow around the dust collecting jig The filter performs the step of capturing particles in the atmosphere. A substrate processing apparatus according to claim 10, wherein The step of capturing the particles includes the step of loading the dust collecting jig into the processing module, and passing the airflow in the atmosphere in the processing module through the filter. The substrate processing apparatus according to claim 10, wherein the control unit outputs a control signal in a manner of performing the following steps, before the step of capturing the particles or capturing the particles. The step operates in parallel with the driving unit provided in the substrate processing apparatus. The substrate processing apparatus according to claim 12, wherein the step of operating the driving unit is performed earlier than the operation of the driving unit when the substrate for processing is processed. The substrate processing apparatus according to claim 10, further comprising: a loading/unloading cassette that carries and transports a transport container for transporting a plurality of substrates to be processed, wherein the control unit stores the aforementioned After the transport container of the dust collecting jig is carried into the loading/unloading port, the control signal is outputted by the transport mechanism extracting the dust collecting jig from the transfer container. A method of capturing a particle, which is used in a semiconductor manufacturing process, and includes a work for placing a dust collecting jig according to any one of claims 1 to 9 in a machine (the machine Place a semi-guide In a state in the substrate for manufacturing the substrate, or in a state in which the dust collecting jig is transferred to the inside of the device by the substrate transfer mechanism, the airflow around the dust collecting jig is passed through the filter. Capture particles in the atmosphere. The method of capturing a particle according to claim 15, wherein the method of confirming the degree of contamination of the dust collecting jig by an inspection device is included. The particle capturing method according to claim 15 or 16, wherein the method of washing the dust collecting jig after the process of capturing the fine particles is included.