TW201602609A - Magnetic field sensor arrangement, corresponding process for its production and operating method - Google Patents

Abstract

The present invention relates to a magnetic field sensor arrangement, to a corresponding manufacturing method and to an operating method. The magnetic field sensor arrangement comprises an ASIC substrate (AC; AC') having a front face (VS) and a rear face (RS) and a hall sensor device (H; H'; H") which has a hall sensor region (HS; HS'; HS") that consists of a III-V semiconductor material, said region being embedded in an insulation layer arrangement (I0, I1, I2, I3; I0, I1, I2, I3, I4, I5) applied to the front face (VS). The hall sensor region (HS; HS'; HS") is electrically connected to a hall sensor evaluation circuit device (101) formed in the ASIC substrate (AC; AC'), via a conductor unit (L2) guided through the insulation layer arrangement (I0, I1, I2, I3; I0, I1, I2, I3, I4, I5).

Description

Magnetic field sensor device, related manufacturing method and operation method

The present invention relates to a magnetic field sensor device, a related manufacturing method, and an operating method.

A device for measuring the direction and/or intensity of a magnetic field is disclosed in DE 10 2008 042 800 A1. This device is arranged on the substrate. A Hall sensor is disposed on the surface of the substrate that is adapted to verify magnetic field components acting in the z-direction that are substantially perpendicular to the surface of the substrate. In addition, two fluxgate sensors are provided to verify the magnetic field component in the X-Y plane of the substrate. In combination with a Hall sensor, three components along all three spatial directions can be determined.

In this device, the Hall sensor is disposed on the 矽 substrate or the 矽 substrate, and on the other hand, two fluxgate sensors are separately fabricated through the micromechanical member and fixed on the surface of the 矽 substrate on.

DE 10 2012 209 232 A1 describes a magnetic field sensor comprising a first sensor core for measuring a magnetic field in a first measurement direction and for following a second measurement A second sensor core that measures the magnetic field in direction, wherein the first sensor core and the second sensor core have a common magnetic anisotropy. These sensor cores are part of a Flipcore fluxgate sensor that is suitable for detecting magnetic fields in the wafer level.

US 6,536,123 B1 describes a magnetic field sensor comprising two fluxgate sensors and a Hall sensor, wherein a hybrid IC is used to analyze the sensor signals.

It is well known that III-V semiconductor materials can be used to fabricate Hall sensors on substrates. No. 6,803,638 discloses an InSb Hall sensor which is deposited on a GaAs substrate by molecular beam epitaxy.

The present invention provides a magnetic field sensor device according to claim 1 of the patent application, a related manufacturing method as in claim 11 of the patent application, and an operation method as in claim 13 of the patent application.

See the attached item for the preferred improvement.

The basic idea of the invention is to provide at least one Hall sensor region composed of a III-V semiconductor material over the ASIC substrate.

A Hall sensor region composed of a III-V semiconductor material, in particular, a magnetic field sensor device according to claim 1 of the present invention and a related manufacturing method according to claim 11 of the present invention, in particular The InSb (indium antimonide) semiconductor region is deposited directly on the ASIC wafer substrate. Thus, the III-V semiconductor material can be directly integrated on the analysis wafer of the magnetic field sensor device. This solution helps to reduce the size of the structure, reduce the cost, reduce the current consumption and increase the data rate.

The Hall sense of the present invention is compared to a Hall sensor region integrated in a germanium wafer The performance of the detector area has increased significantly.

By integrating other sensor areas, such as the core area for magnetic fluxgate sensor devices and magnetic coil arrangements, a compact, multi-dimensional (especially three-dimensional) magnetic field sensor device with a small housing size can be realized. .

According to a preferred embodiment, the Hall sensor region is comprised of InSb. This material can be plated in a highly controlled manner by sputtering.

According to another preferred embodiment, the Hall sensor region has a sequence of layers comprising layers of material having different grain sizes. This solution helps to bond and attach the Hall sensor region to the substrate.

According to another preferred embodiment, a plurality of first layers having a first grain size and a second layer having a second grain size are alternately constructed, wherein the second grain size is much smaller than the first grain degree. Thereby the engagement of the layers can be advantageously achieved.

According to another preferred embodiment, at least one fluxgate sensor device is embedded in the insulating layer device plated on the front surface, and has a magnetic core region composed of a ferromagnetic material and a magnetic coil device. The magnetic core region and the magnetic coil device are electrically connected to the fluxgate sensor analysis circuit device built in the ASIC substrate by a second conductive path device passing through the insulating layer device. This makes it possible to construct a composite sensor device, such as a 3D magnetic sensor.

According to another preferred embodiment, the Hall sensor device and the fluxgate sensor device are embedded in different planes of the insulating layer device. This solution helps achieve good insulation and improved operability.

According to another preferred embodiment, the Hall sensor device is disposed above or below the end of one of the core regions. So that you can change the Hall sensor The dual function of the device saves space.

According to another preferred embodiment, in the insulating layer device, a magnetic field flux concentration region composed of a ferromagnetic material is embedded above or below the Hall sensor region. This solution helps to improve measurement performance.

According to another preferred embodiment, the magnetic field flux concentration region is embodied as a hollow cylinder having a cylinder axis that is substantially perpendicular to the Hall sensor region. This solution enables a favorable field distribution.

According to another preferred embodiment, the core region and/or the flux concentration region are composed of Ni/Fe/Al. These materials can be processed in a controlled manner by a thin layer process.

AC‧‧‧ASIC substrate

AC'‧‧‧ASIC substrate

End of E1‧‧‧

End of E2‧‧‧

F0‧‧‧ Fluxgate sensor device

F1‧‧‧ Fluxgate sensor device

F2‧‧‧ fluxgate sensor device

FC0‧‧‧ magnetic core area

FC1‧‧‧Magnetic core area

FC2‧‧‧ magnetic core area

FLC‧‧‧Magnetic magnetic flux concentration area

H‧‧‧ Hall sensor device

H'‧‧‧ Hall sensor device

H"‧‧‧ Hall sensor device

HL‧‧‧ cavity

HS‧‧‧ Hall sensor area

HS'‧‧‧ Hall sensor area

HS"‧‧‧ Hall sensor area

I0‧‧‧Insulation

I1‧‧‧Insulation

I2‧‧‧Insulation

I3‧‧‧Insulation

I4‧‧‧Insulation

I5‧‧‧Insulation

L1‧‧‧Second conductive path device

L2‧‧‧First Conductive Path Device

RS‧‧‧ back

S1‧‧‧ first floor

S2‧‧‧ first floor

S3‧‧‧ first floor

SE0‧‧‧ Magnetic coil device

SE1‧‧‧ Magnetic coil device

SE2‧‧‧ magnetic coil device

SS1‧‧‧ second floor

SS2‧‧‧ second floor

VS‧‧‧ positive

100‧‧‧ Fluxgate sensor analysis circuit device

101‧‧‧ Hall sensor analysis circuit device

1 is a plan view of a magnetic field sensor device in a first embodiment of the present invention; FIG. 2 is a magnetic field sensor device according to a first embodiment of the present invention, taken along line AA' of FIG. 3 is a cross-sectional enlarged view of a Hall sensor region of a magnetic field sensor device in a first embodiment of the present invention; and FIG. 4 is a magnetic field sensor in a second embodiment of the present invention. FIG. 5a is a cross-sectional enlarged view of a Hall sensor region of a magnetic field sensor device in a third embodiment of the present invention; and FIG. 5b) is a magnetic field in a third embodiment of the present invention A top view of the Hall sensor area of the sensor device.

The invention will now be further described with reference to the embodiments shown in the drawings.

In the figures, identical or functionally identical elements are denoted by the same reference numerals.

1 is a plan view of a magnetic field sensor device in a first embodiment of the present invention, and FIG. 2 is a cross-sectional view of the magnetic field sensor device in the embodiment taken along line AA' of FIG. .

In FIGS. 1 and 2, the symbol AC indicates an ASIC substrate, particularly a wafer substrate including a front surface VS and a back surface RS. The Hall sensor device H is embedded in an insulating layer device plated on the front surface VS, the insulating layer device comprising a plurality of insulating layers I0, I1, I2, I3, for example, oxides, the Hall sensing The device has a Hall sensor region HS composed of a III-V semiconductor material (here InSb, indium antimonide).

As shown in FIG. 2, the Hall sensor region HS is formed on the ASIC substrate AC by the first conductive via device L2 passing through the insulating layers I0, I1, I2 of the insulating layer devices I0, I1, I2, I3. The Hall sensor analysis circuit device 101 in the middle establishes an electrical connection.

To this end, a conductive via layer (not shown) is deposited and structured in the insulating layer devices I0, I1, I2, I3, and corresponding through-contact holes are formed.

For the sake of clarity, Figures 1 and 2 only schematically illustrate a conductive path device L2 that actually has a plurality of conductive paths required for the function of the Hall sensor device H.

Further, two fluxgate sensor devices F1 and F2 are embedded in the insulating layer devices I0, I1, I2, I3 plated on the front surface VS.

In the present example, a first fluxgate sensor device F1 is provided having a first magnetic Core region FC1 and first magnetic coil device SE1. The second fluxgate sensor device F2 orthogonal to the first fluxgate sensor device F1 has a second core region FC2 and a second magnetic coil device SE2. The magnetic coil devices SE1, SE2 usually have an excitation coil and a pickup coil.

As shown in FIG. 2, the core regions FC1, FC2 and the magnetic coil devices SE1, SE2 are constructed by the second conductive path device L1 passing through the insulating layers I0, I1 of the insulating layer devices I0, I1, I2, I3. The fluxgate sensor analysis circuit device 100 in the ASIC substrate AC establishes an electrical connection.

The conductive path devices L1, L2 are made of, for example, aluminum.

Therefore, the magnetic field sensor device shown in FIGS. 1 and 2 is a three-dimensional magnetic field sensor in which the fluxgate sensor devices F1 and F2 measure magnetic field components along the x-direction and the y-direction, and Hall sensing The device H measures the magnetic field component along the z-direction.

When manufacturing the magnetic field sensor device shown in FIGS. 1 and 2, the ASIC substrate AC is based. A first insulating layer I0 composed of, for example, hafnium oxide or tantalum nitride is plated to the ASIC substrate AC. In a subsequent processing step, a ferromagnetic material of the core regions FC1, FC2, such as Ni/Fe/Al (nickel/iron/aluminum), is plated to the first insulating layer I0 by a thin layer process, and the iron is The magnetic material is structured. The second insulating layer I1 is then plated, whereby the structured core regions FC1, FC2 are embedded. The III-V semiconductor material for the Hall sensor region HS is then subjected to multi-layer plating by sputtering, and the semiconductor material is structured. This Hall sensor region HS is then embedded in the third insulating layer I2, and finally a fourth insulating layer I3 is deposited which insulates the structure from above.

Conventional steps for constructing conductive via planes, other insulating planes and vias for constructing conductive via devices L1, L2, and for constructing first and second coils For the steps of SE1 and SE2, the steps are not shown and described herein.

Therefore, the Hall sensor device H and the fluxgate sensor devices F1, F2 are embedded in different planes of the insulating layer devices I0, I1, I2, I3, but it is not necessary to adopt this scheme as the case may be.

3 is an enlarged cross-sectional view of a Hall sensor region of the magnetic field sensor device in the first embodiment of the present invention.

As shown in FIG. 3, in this embodiment, the Hall sensor region HS is constructed by layer processes S1, SS1, S2, SS2, S3, etc. through a sputtering process through a material layer having different particle sizes, wherein Different particle sizes are achieved through temperature changes during the sputtering process in order to obtain the smoothest possible morphology.

In this example, the sputtering temperature typically varies from 250 to 450 °C. Wherein in the present example, a plurality of first layers S1, S2, S3 having a first grain size and a plurality of second layers SS1, SS2 having a second grain size are alternately constructed on the starting layer ST composed of InSb. Wherein the second grain size is much smaller than the first grain size. Typical grain sizes of the first and second layers are 5-50 nm and 500-1000 nm, respectively.

This smooth shape of the Hall element helps to improve the operability of the subsequent processing plane because the calibration marks remain visible and the electrical offset is reduced.

4 is a plan view of a magnetic field sensor device in a second embodiment of the present invention.

In the second embodiment shown in Fig. 4, the ASIC wafer is indicated by the symbol AC'. A single fluxgate sensor device F0 is embedded on the front surface VS of the ASIC chip, and includes a core region FC0 composed of a ferromagnetic material and a magnetic coil device SE0. Contains a single magnetic coil for excitation only. The Hall sensor region HS' is arranged above or below the first end E1 of the core region FC0, wherein the second end is indicated by the symbol E2.

In a manner similar to the first embodiment described above, the Hall sensor region HS', and the fluxgate sensor device F0 including the core region FC0 and the magnetic coil device SE0 are embedded in the insulating layers I0, I1, I2. , I3.

In the second embodiment, the fluxgate sensor device F0 is not required to be equipped with a pickup coil, because after the fluxgate sensor device F0 is activated, the Hall sensor device H' can be used to measure the magnetic field. Change through. For this purpose, in particular the remagnetization moment of the magnetic core region FC0 is detected as a function of the change in the z-direction of the magnetic field measured by the Hall sensor device H'.

Of course, another Hall sensor region may be disposed above or below the second end E2 of the core region FC0 to improve measurement sensitivity and measurement accuracy.

An advantage of this embodiment is that the construction of the member can be reduced.

5a) is a cross-sectional enlarged view of a Hall sensor region of a magnetic field sensor device in a third embodiment of the present invention, and FIG. 5b) is a magnetic field sensor in a third embodiment of the present invention A top view of the Hall sensor area of the device.

In the third embodiment shown in FIG. 5, the magnetic field flux concentration region FLC composed of a ferromagnetic material is embedded above and below (or below) the insulating layer device I0 in a manner adjacent to the Hall sensor region HS". I1, I2, I3, I4, I5. The flux concentration region FLC is implemented as a hollow cylinder with a cavity HL, wherein the cylinder axis is substantially perpendicular to the Hall sensor region HS".

Preferably, the thin core layer is used to form and use a magnetic core region of the fluxgate sensor device The same material as in the domains SE1 and SE2, that is, for example, Ni/Fe/Al (nickel/iron/aluminum), is used to manufacture the magnetic flux concentration region FLC.

To this end, a hole is etched in the fourth insulating layer I4 plated over the third insulating layer, and a Ni/Fe/Al layer is deposited over the hole and etched back. Here, the fifth insulating layer I5 insulates the structure from above.

Adding a flux concentration area FLC helps to enhance the sensitivity of the Hall sensor device H" and reduce noise.

Although the present invention has been fully described in connection with the preferred embodiments thereof, the invention is not limited to the embodiments, but can be modified in various ways.

Of course, more than one Hall sensor device including a plurality of Hall sensor regions may be provided in the insulating layer device in order to reduce the offset caused by the package stress. More fluxgate sensor devices can also be provided.

Although the Hall sensor regions in the above embodiments extend substantially parallel to the front surface VS, the Hall sensor regions may be disposed on an inclined plane in the insulating laminate stack through a corresponding structuring process, such that The Hall sensor region has sensitivity to the magnetic field in the x, y plane.

Depending on the specific requirements, the geometry of the above embodiments, particularly the Hall sensor regions, may vary.

The present invention is also not limited to the III-V semiconductor material InSb, and any III-V semiconductor material having Hall sensitivity can be used.

In the first embodiment, the magnetic coil devices SE1, SE2 each include a first coil device and a second coil device for exciting or picking up, respectively. But as far as the first embodiment is concerned In other words, it is also possible to provide only one first coil for both excitation and pickup.

AC‧‧‧ASIC substrate

FC2‧‧‧ magnetic core area

HS‧‧‧ Hall sensor area

I0‧‧‧Insulation

I1‧‧‧Insulation

I2‧‧‧Insulation

I3‧‧‧Insulation

L1‧‧‧Second conductive path device

L2‧‧‧First Conductive Path Device

RS‧‧‧ back

SE2‧‧‧ magnetic coil device

VS‧‧‧ positive

100‧‧‧ Fluxgate sensor analysis circuit device

101‧‧‧ Hall sensor analysis circuit device

Claims (15)

A magnetic field sensor device comprising: an ASIC substrate (AC; AC') comprising a front side (VS) and a back side (RS); and a Hall sensor device (H; H'; H") having Hall sensor region (HS; HS'; HS" composed of III-V semiconductor material, the Hall sensor region is embedded in an insulating layer device (I0, I1) plated on the front surface (VS) , I2, I3; I0, I1, I2, I3, I4, I5); wherein the Hall sensor region (HS; HS'; HS") passes through the insulating layer device (I0, I1, a first conductive path device (L2) of I2, I3; I0, I1, I2, I3, I4, I5) and a Hall sensor analysis circuit device (101) built in the ASIC substrate (AC; AC') Establish an electrical connection. The magnetic field sensor device of claim 1, wherein the Hall sensor region (HS; HS'; HS") is composed of InSb (indium antimonide). The magnetic field sensor device of claim 1 or 2, wherein the Hall sensor region (HS; HS'; HS") has a sequence (S1, SS1, S2, SS2, S3) including A number of layers of material with different grain sizes. A magnetic field sensor device according to claim 3, wherein a plurality of first layers (S1, S2, S3) having a first grain size and a second layer having a second grain size are alternately constructed ( SS1, SS2), wherein the second grain size is much smaller than the first grain size. A magnetic field sensor device according to claim 1 or 2, wherein the insulating layer device (I0, I1, I2, I3; I0, I1, I2, I3, I4, which is plated on the front side (VS), I5) is embedded with at least one fluxgate sensor device (F1, F2; F0) having a core region (FC1, FC2; FC0) composed of a ferromagnetic material and a magnetic coil device (SE1, SE2) ;SE0); And wherein the magnetic core region (FC1, FC2; FC0) and the magnetic coil device (SE1, SE2; SE0) pass through the insulating layer device (I0, I1, I2, I3; I0, I1, I2, The second conductive path means (L1) of I3, I4, I5) is electrically connected to the fluxgate sensor analysis circuit means (100) built in the ASIC substrate (AC; AC'). The magnetic field sensor device of claim 5, wherein the Hall sensor device (H; H'; H") and the fluxgate sensor device (F1, F2; F0) are embedded in The insulating layer devices (I0, I1, I2, I3; I0, I1, I2, I3, I4, I5) are in different planes. The magnetic field sensor device of claim 6, wherein the Hall sensor region (HS') is disposed above or below the end of the core region (FC0) adjacent to the end (E1) of the core region (FC0) . A magnetic field sensor device according to claim 1 or 2, wherein the insulating layer device (I0, I1, I2, I3, I4, I5) is adjacent to the Hall sensor region (HS") The magnetic flux concentration region (FLC) composed of a ferromagnetic material is embedded above or below it. The magnetic field sensor device of claim 8, wherein the magnetic field flux concentration region (FLC) is implemented as a hollow cylinder having a cylinder axis (ZA) substantially perpendicular to the Hall sensor region (HS"). The magnetic field sensor device of claim 5, wherein the magnetic core region (FC1, FC2; FC0) and/or the magnetic flux concentration region (FLC) is made of Ni/Fe/Al (nickel/iron/aluminum) ) constitutes. A method of manufacturing a magnetic field sensor device, comprising the steps of: providing an ASIC substrate (AC; AC') having a front side (VS) and a back side (RS), the ASIC substrate (AC; AC') being built in the ASIC substrate (AC; AC') Hall sensor analysis circuit device (101); A Hall sensor region (HS; HS'; HS" composed of a III-V semiconductor material is embedded in an insulating layer device (I0, I1, I2, I3; I0, I1) plated on the front surface (VS) , I2, I3, I4, I5); and a first conductive path device (L2) passing through the insulating layer device (I0, I1, I2, I3; I0, I1, I2, I3, I4, I5) The Hall sensor region (HS; HS'; HS" is electrically connected to the Hall sensor analysis circuit device (101) built into the ASIC substrate (AC; AC'). The manufacturing method of claim 11, wherein a layer sequence (S1, SS1, S2, SS2, S3) comprising a plurality of material layers having different grain sizes is deposited, and then the layer sequence is structured to construct The Hall sensor area (HS; HS'; HS"). The manufacturing method of claim 11 or 12, wherein the Hall sensor region (HS; HS'; HS") is constructed by sputtering. The manufacturing method of claim 11 or 12, wherein the Hall sensor region (HS; HS'; HS") is constructed using InSb (indium antimonide). A method of operating a magnetic field sensor device according to claim 7 wherein the Hall sensor device (H1) is used after exciting the fluxgate sensor device (F1, F2; F0); H';H") to measure the flux change.