TW201602609A - 磁場感測器裝置,相關的製造方法及操作方法 - Google Patents

磁場感測器裝置,相關的製造方法及操作方法 Download PDF

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Publication number
TW201602609A
TW201602609A TW104118855A TW104118855A TW201602609A TW 201602609 A TW201602609 A TW 201602609A TW 104118855 A TW104118855 A TW 104118855A TW 104118855 A TW104118855 A TW 104118855A TW 201602609 A TW201602609 A TW 201602609A
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TW
Taiwan
Prior art keywords
hall sensor
magnetic field
region
sensor device
insulating layer
Prior art date
Application number
TW104118855A
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English (en)
Chinese (zh)
Inventor
阿奇美 布萊林
克里斯堤安 帕塔克
Original Assignee
羅伯特博斯奇股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 羅伯特博斯奇股份有限公司 filed Critical 羅伯特博斯奇股份有限公司
Publication of TW201602609A publication Critical patent/TW201602609A/zh

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/0052Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00Hall-effect devices
    • H10N52/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00Hall-effect devices
    • H10N52/101Semiconductor Hall-effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/0206Three-component magnetometers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07Hall effect devices
    • G01R33/072Constructional adaptation of the sensor to specific applications

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
TW104118855A 2014-06-13 2015-06-11 磁場感測器裝置,相關的製造方法及操作方法 TW201602609A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102014211311.3A DE102014211311A1 (de) 2014-06-13 2014-06-13 Magnetfeldsensoranordnung, entsprechendes Herstellungsverfahren und Betriebsverfahren

Publications (1)

Publication Number Publication Date
TW201602609A true TW201602609A (zh) 2016-01-16

Family

ID=53268801

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104118855A TW201602609A (zh) 2014-06-13 2015-06-11 磁場感測器裝置,相關的製造方法及操作方法

Country Status (3)

Country Link
DE (1) DE102014211311A1 (de)
TW (1) TW201602609A (de)
WO (1) WO2015189023A1 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI728065B (zh) * 2016-03-15 2021-05-21 日商艾普凌科有限公司 磁性感測器及其製造方法
US11245067B2 (en) 2019-11-01 2022-02-08 Globalfoundries Singapore Pte. Ltd. Hall sensors with a three-dimensional structure
TWI768489B (zh) * 2018-11-01 2022-06-21 新加坡商格羅方德半導體私人有限公司 霍爾感測器之結構及形成其結構之方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017004349A1 (de) * 2017-05-08 2018-11-08 Tdk-Micronas Gmbh Magnetfeldkompensationseinrichtung

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3047656B2 (ja) * 1993-01-12 2000-05-29 株式会社村田製作所 InSb薄膜の製造方法
JP2001308407A (ja) * 2000-04-24 2001-11-02 Victor Co Of Japan Ltd InSb薄膜基板
US6536123B2 (en) 2000-10-16 2003-03-25 Sensation, Inc. Three-axis magnetic sensor, an omnidirectional magnetic sensor and an azimuth measuring method using the same
JP2002299599A (ja) * 2001-04-02 2002-10-11 Asahi Kasei Corp 集積化磁気センサ及びその製造方法
WO2003010836A1 (fr) 2001-07-26 2003-02-06 Asahi Kasei Electronics Co., Ltd. Capteur a effet hall semi-conducteur
EP1598876A4 (de) * 2003-02-26 2008-04-30 Asahi Kasei Denshi Kk Halbleitersensor und verfahren zu seiner herstellung
DE102008042800A1 (de) 2008-10-13 2010-04-15 Robert Bosch Gmbh Vorrichtung zur Messung von Richtung und/oder Stärke eines Magnetfeldes
ATE552510T1 (de) * 2008-12-03 2012-04-15 St Microelectronics Srl Magnetischer sensor mit grossem messbereich und herstellungsprozess für den sensor
EP2333573B1 (de) * 2009-11-30 2012-10-24 STMicroelectronics Srl Integrierter Magnetsensor zum Messen von horizontalen Feldern und Herstellungsverfahren für den Sensor
US20120299587A1 (en) * 2011-05-26 2012-11-29 Honeywell International Inc. Three-axis magnetic sensors
DE102012209232A1 (de) 2012-05-31 2013-12-05 Robert Bosch Gmbh Magnetfeldsensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI728065B (zh) * 2016-03-15 2021-05-21 日商艾普凌科有限公司 磁性感測器及其製造方法
TWI768489B (zh) * 2018-11-01 2022-06-21 新加坡商格羅方德半導體私人有限公司 霍爾感測器之結構及形成其結構之方法
US11245067B2 (en) 2019-11-01 2022-02-08 Globalfoundries Singapore Pte. Ltd. Hall sensors with a three-dimensional structure

Also Published As

Publication number Publication date
DE102014211311A1 (de) 2015-12-17
WO2015189023A1 (de) 2015-12-17

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