TW201602609A - 磁場感測器裝置,相關的製造方法及操作方法 - Google Patents
磁場感測器裝置,相關的製造方法及操作方法 Download PDFInfo
- Publication number
- TW201602609A TW201602609A TW104118855A TW104118855A TW201602609A TW 201602609 A TW201602609 A TW 201602609A TW 104118855 A TW104118855 A TW 104118855A TW 104118855 A TW104118855 A TW 104118855A TW 201602609 A TW201602609 A TW 201602609A
- Authority
- TW
- Taiwan
- Prior art keywords
- hall sensor
- magnetic field
- region
- sensor device
- insulating layer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/0206—Three-component magnetometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
- G01R33/072—Constructional adaptation of the sensor to specific applications
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014211311.3A DE102014211311A1 (de) | 2014-06-13 | 2014-06-13 | Magnetfeldsensoranordnung, entsprechendes Herstellungsverfahren und Betriebsverfahren |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201602609A true TW201602609A (zh) | 2016-01-16 |
Family
ID=53268801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104118855A TW201602609A (zh) | 2014-06-13 | 2015-06-11 | 磁場感測器裝置,相關的製造方法及操作方法 |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE102014211311A1 (de) |
TW (1) | TW201602609A (de) |
WO (1) | WO2015189023A1 (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI728065B (zh) * | 2016-03-15 | 2021-05-21 | 日商艾普凌科有限公司 | 磁性感測器及其製造方法 |
US11245067B2 (en) | 2019-11-01 | 2022-02-08 | Globalfoundries Singapore Pte. Ltd. | Hall sensors with a three-dimensional structure |
TWI768489B (zh) * | 2018-11-01 | 2022-06-21 | 新加坡商格羅方德半導體私人有限公司 | 霍爾感測器之結構及形成其結構之方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017004349A1 (de) * | 2017-05-08 | 2018-11-08 | Tdk-Micronas Gmbh | Magnetfeldkompensationseinrichtung |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3047656B2 (ja) * | 1993-01-12 | 2000-05-29 | 株式会社村田製作所 | InSb薄膜の製造方法 |
JP2001308407A (ja) * | 2000-04-24 | 2001-11-02 | Victor Co Of Japan Ltd | InSb薄膜基板 |
US6536123B2 (en) | 2000-10-16 | 2003-03-25 | Sensation, Inc. | Three-axis magnetic sensor, an omnidirectional magnetic sensor and an azimuth measuring method using the same |
JP2002299599A (ja) * | 2001-04-02 | 2002-10-11 | Asahi Kasei Corp | 集積化磁気センサ及びその製造方法 |
WO2003010836A1 (fr) | 2001-07-26 | 2003-02-06 | Asahi Kasei Electronics Co., Ltd. | Capteur a effet hall semi-conducteur |
EP1598876A4 (de) * | 2003-02-26 | 2008-04-30 | Asahi Kasei Denshi Kk | Halbleitersensor und verfahren zu seiner herstellung |
DE102008042800A1 (de) | 2008-10-13 | 2010-04-15 | Robert Bosch Gmbh | Vorrichtung zur Messung von Richtung und/oder Stärke eines Magnetfeldes |
ATE552510T1 (de) * | 2008-12-03 | 2012-04-15 | St Microelectronics Srl | Magnetischer sensor mit grossem messbereich und herstellungsprozess für den sensor |
EP2333573B1 (de) * | 2009-11-30 | 2012-10-24 | STMicroelectronics Srl | Integrierter Magnetsensor zum Messen von horizontalen Feldern und Herstellungsverfahren für den Sensor |
US20120299587A1 (en) * | 2011-05-26 | 2012-11-29 | Honeywell International Inc. | Three-axis magnetic sensors |
DE102012209232A1 (de) | 2012-05-31 | 2013-12-05 | Robert Bosch Gmbh | Magnetfeldsensor |
-
2014
- 2014-06-13 DE DE102014211311.3A patent/DE102014211311A1/de not_active Withdrawn
-
2015
- 2015-05-26 WO PCT/EP2015/061530 patent/WO2015189023A1/de active Application Filing
- 2015-06-11 TW TW104118855A patent/TW201602609A/zh unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI728065B (zh) * | 2016-03-15 | 2021-05-21 | 日商艾普凌科有限公司 | 磁性感測器及其製造方法 |
TWI768489B (zh) * | 2018-11-01 | 2022-06-21 | 新加坡商格羅方德半導體私人有限公司 | 霍爾感測器之結構及形成其結構之方法 |
US11245067B2 (en) | 2019-11-01 | 2022-02-08 | Globalfoundries Singapore Pte. Ltd. | Hall sensors with a three-dimensional structure |
Also Published As
Publication number | Publication date |
---|---|
DE102014211311A1 (de) | 2015-12-17 |
WO2015189023A1 (de) | 2015-12-17 |
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