TW201545839A - Manufacturing method of chemical mechanical polishing trimmer - Google Patents
Manufacturing method of chemical mechanical polishing trimmer Download PDFInfo
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- TW201545839A TW201545839A TW103120293A TW103120293A TW201545839A TW 201545839 A TW201545839 A TW 201545839A TW 103120293 A TW103120293 A TW 103120293A TW 103120293 A TW103120293 A TW 103120293A TW 201545839 A TW201545839 A TW 201545839A
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Abstract
Description
本發明為有關一種化學機械研磨修整器,尤指一種化學機械研磨修整器的製造方法。The invention relates to a chemical mechanical polishing dresser, in particular to a method for manufacturing a chemical mechanical polishing dresser.
晶圓代工為我國最重要的工業之一,而在對晶圓進行各種化學或物理製程前,必須先對其進行一表面研磨拋光作業,使晶圓之表面平坦化,其中該表面研磨拋光作業即稱之為化學機械研磨。 常見的化學機械研磨為使用一固定在一旋轉台的研磨墊(或拋光墊),接觸並施力於一承載在一可自旋之載具上的晶圓。該拋光墊在一段時間的使用後,必需透過一修整器對其進行修整,包括切削(Shave)該拋光墊表面,移除該拋光墊表面累積的廢棄物,藉此保持該拋光墊表面的粗糙度。 在美國發明專利公告第US7467989號中,即揭示一種具塑膠基座之陶瓷研磨墊修整器及其製造方法,其利用一陶瓷粉末玻璃化的製程,將複數研磨顆粒固著於一陶瓷基板上,形成一陶瓷鑽石碟,再利用一塑膠基座裝設於其底部,其中該陶瓷粉末玻璃化的製程,為將一低熔點的陶瓷粉末預先形成於該陶瓷基板上,再加熱使之形成一玻璃化固著層,藉以將布置其上的該研磨顆粒固著於該陶瓷基板,而該底部的該塑膠基座用來承載該陶瓷鑽石碟,以利於形成對應的螺孔及定位孔以配合所要安裝之化學機械研磨(CMP)機台,且能降低生產成本。 然而,該修整器為透過所設置的該研磨顆粒,對該拋光墊進行一修整作業,但是由於該研磨顆粒的大小尺寸不同,導致突出高度無法一致,令部分該研磨顆粒未被有效的利用,而使得研磨的效率仍有改進的空間。Wafer foundry is one of the most important industries in China. Before performing various chemical or physical processes on wafers, it must be surface-polished and planarized to flatten the surface of the wafer. The operation is called chemical mechanical polishing. A common CMP is to use a polishing pad (or polishing pad) that is attached to a rotating table to contact and apply a wafer to a spin-on carrier. After a period of use, the polishing pad must be trimmed through a dresser, including cutting the surface of the polishing pad to remove waste accumulated on the surface of the polishing pad, thereby maintaining the surface roughness of the polishing pad. degree. In the U.S. Patent No. 7,467,989, a ceramic polishing pad conditioner having a plastic base and a method of manufacturing the same are disclosed, which utilize a ceramic powder vitrification process to fix a plurality of abrasive particles on a ceramic substrate. Forming a ceramic diamond disc, and then mounting a plastic base on the bottom thereof, wherein the ceramic powder is vitrified by pre-forming a low melting ceramic powder on the ceramic substrate and heating to form a glass. Fixing the fixing layer to fix the abrasive particles disposed thereon to the ceramic substrate, and the plastic base of the bottom is used for carrying the ceramic diamond disc to facilitate forming corresponding screw holes and positioning holes to meet the desired A chemical mechanical polishing (CMP) machine is installed and can reduce production costs. However, the dresser performs a trimming operation on the polishing pad through the set abrasive particles. However, due to the different size and size of the abrasive particles, the protruding height cannot be consistent, and some of the abrasive particles are not effectively utilized. There is still room for improvement in the efficiency of the grinding.
本發明的主要目的,在於解決習知的化學機械修整器,其所設置的複數個研磨顆粒之突出高度的一致性較差,造成研磨效率不佳的問題。 為達上述目的,本發明提供一種化學機械研磨修整器的製造方法,包含以下步驟: 提供一暫時基底,該暫時基底包含一具有一平面的剛性層以及一設置於該平面上的導電軟質層; 將複數研磨顆粒佈植於該導電軟質層,令該研磨顆粒具有的一研磨端插入該導電軟質層而抵觸該平面; 於該導電軟質層上形成一覆蓋並固定該研磨顆粒的金屬層,該金屬層具有一遠離該暫時基底的結合面;以及 移除該剛性層及該導電軟質層,並將該結合面與一研磨基座結合而得到一修整工具,其中,該研磨顆粒的該研磨端具有一高一致性的露出高度。 如此一來,藉由本發明之製造方法所得到的化學機械研磨修整器,該研磨顆粒的該研磨端之該露出高度具有該高一致性,令每個該研磨端在對一拋光墊進行一修整作業時,皆能有效被利用,而得以提高該修整工具於研磨的效率。The main object of the present invention is to solve the problem of the conventional chemical mechanical dresser in which the uniformity of the protruding heights of the plurality of abrasive particles is poor, resulting in poor grinding efficiency. In order to achieve the above object, the present invention provides a method for manufacturing a chemical mechanical polishing conditioner, comprising the steps of: providing a temporary substrate comprising a rigid layer having a plane and a conductive soft layer disposed on the plane; Depositing a plurality of abrasive particles on the conductive soft layer, and inserting a polished end of the abrasive particles into the conductive soft layer to interfere with the plane; forming a metal layer covering and fixing the abrasive particles on the conductive soft layer, The metal layer has a bonding surface away from the temporary substrate; and the rigid layer and the conductive soft layer are removed, and the bonding surface is combined with a polishing base to obtain a trimming tool, wherein the grinding end of the abrasive particle Has a high uniformity of exposed height. In this way, the chemical mechanical polishing dresser obtained by the manufacturing method of the present invention has the high uniformity of the exposed height of the polished end of the abrasive particles, so that each of the polishing ends is trimmed on a polishing pad. When working, it can be effectively utilized, and the efficiency of the dressing tool in grinding can be improved.
有關本發明的詳細說明及技術內容,現就配合圖式說明如下: 請參閱『圖1A』至『圖1F』所示,為本發明一實施例的製造流程示意圖,如圖所示:本發明提供一種化學機械研磨修整器的製造方法,用以製造一對一拋光墊進行一修整作業的修整工具,該製造方法包含以下步驟: 步驟1:如『圖1A』所示,提供一暫時基底10,該暫時基底10包含一剛性層11以及一導電軟質層12,該剛性層11具有一平面111,製作該剛性層11的材質可使用鋼、鎳、鉻、鈦、銅、鋁、花崗石、玻璃及壓克力等。該導電軟質層12設置於該平面111上,並包含一接觸該平面111的軟性基板122以及一遠離該平面111的導電表面121,用以製作該軟性基板122的材料可為熱塑性之膠體材料,例如乙烯/醋酸乙烯酯共聚物(EVA)、聚對苯二甲酸乙二酯(PET)、聚乙烯(PE)及臘等,該導電表面121則可用鈀、鎳、鉻、鈦、金、鉑、銅、鋁、碳、不鏽鋼或選自上述的組合物製成,形成於該軟性基板122上。 步驟2:如『圖1B』所示,將複數研磨顆粒20佈植於該導電軟質層12,該研磨顆粒20包含有一形成尖角狀的研磨端21以及一相對遠離該研磨端21的固定端22,該研磨端21具有一端點211,該研磨顆粒20在此具有一介於100um至500um的粒徑,並大於該導電軟質層12的一厚度,而可為包含至少一大研磨顆粒23以及至少一粒徑小於該大研磨顆粒的小研磨顆粒24,該研磨顆粒20可選自人造鑽石、天然鑽石、多晶鑽石、立方氮化硼、多晶立方氮化硼或上述組合。在本實施例中,為使用一模板30進行該研磨顆粒20的佈植,該模板30上排列有複數個定位孔洞31,該定位孔洞31具有對應放入該研磨顆粒20的孔徑,而介於150um至900um,令該大研磨顆粒23及該小研磨顆粒24在放入該定位孔洞31時,該研磨端21皆得以插入該導電軟質層12,該端點211抵觸該剛性層11的該平面111,而該固定端22則外露於該導電軟質層12之外,隨後再把該模板30移除,於該導電軟質層12留下排列一致的該研磨顆粒20,如『圖1C』所示。 步驟3:如『圖1D』所示,於該導電軟質層12上形成一金屬層40,該金屬層40覆蓋該研磨顆粒20,與該研磨顆粒20結合,將該研磨顆粒20固定於該金屬層40,該金屬層40並具有一遠離該暫時基底10的結合面41。在本實施例中,該金屬層40為使用電鍍的方式形成於該導電軟質層12上,但不以此為限制,令該金屬層40連接於該導電表面121,進而與該研磨顆粒20結合,該金屬層40所使用的材質可為鈀、鎳、鉻、鈦、金、鉑、不鏽鋼或上述的組合物。 步驟4:如『圖1E』及『圖1F』所示,移除該剛性層11及該導電軟質層12,令插入該導電軟質層12的該研磨顆粒20露出該研磨端21,由於不管是該大研磨顆粒23或是該小研磨顆粒24,該研磨端21的該端點211於之前在該導電軟質層12中皆為抵觸於該剛性層11的該平面111上,該些端點211於露出後則可相對該金屬層40形成一具有高一致性的露出高度H,並形成一研磨平面70。接著,將該結合面41與一研磨基座50結合而得到該修整工具。在本實施例中,該結合面41為透過膠結的方式與該研磨基座50結合,可選用環氧樹脂、壓克力膠或熱固性膠等,而於該結合面41與該研磨基座50之間形成一黏著層60,但此僅為舉例說明,本發明不以此為結合方式的限制。 綜上所述,利用本發明之製造方法所得到的該修整工具,藉由先將該研磨端抵觸於該剛性層的該平面,可縮短各個該研磨顆粒之露出高度的差異,使該露出高度可以具有該高一致性,當對該拋光墊進行該修整作業時,該端點由於形成該研磨平面,令每個該研磨端皆能有效的與該拋光墊接觸,均勻的進行研磨,而得以提高該修整工具於修整的效率,因此本發明極具進步性及符合申請發明專利的要件,爰依法提出申請,祈 鈞局早日賜准專利,實感德便。 以上已將本發明做一詳細說明,惟以上所述者,僅爲本發明的一較佳實施例而已,當不能限定本發明實施的範圍。即凡依本發明申請範圍所作的均等變化與修飾等,皆應仍屬本發明的專利涵蓋範圍內。The detailed description and the technical content of the present invention will now be described with reference to the following drawings: Please refer to FIG. 1A to FIG. 1F, which are schematic diagrams showing a manufacturing process according to an embodiment of the present invention. A manufacturing method of a chemical mechanical polishing dresser for manufacturing a one-to-one polishing pad for performing a trimming operation, the manufacturing method comprising the following steps: Step 1: As shown in FIG. 1A, a temporary substrate 10 is provided. The temporary substrate 10 includes a rigid layer 11 and a conductive soft layer 12 having a flat surface 111. The rigid layer 11 can be made of steel, nickel, chromium, titanium, copper, aluminum or granite. , glass and acrylic. The conductive soft layer 12 is disposed on the plane 111 and includes a flexible substrate 122 contacting the plane 111 and a conductive surface 121 away from the plane 111. The material for forming the flexible substrate 122 may be a thermoplastic colloid material. For example, ethylene/vinyl acetate copolymer (EVA), polyethylene terephthalate (PET), polyethylene (PE), wax, etc., the conductive surface 121 can be palladium, nickel, chromium, titanium, gold, platinum. And copper, aluminum, carbon, stainless steel or a composition selected from the above, formed on the flexible substrate 122. Step 2: As shown in FIG. 1B, a plurality of abrasive particles 20 are implanted in the conductive soft layer 12, and the abrasive particles 20 include a sharp-edged grinding end 21 and a fixed end relatively away from the grinding end 21. 22, the grinding end 21 has an end point 211, wherein the abrasive particle 20 has a particle diameter of 100 um to 500 um and is larger than a thickness of the conductive soft layer 12, and may include at least one large abrasive particle 23 and at least A small abrasive particle 24 having a particle size smaller than the large abrasive particles, the abrasive particle 20 may be selected from the group consisting of synthetic diamond, natural diamond, polycrystalline diamond, cubic boron nitride, polycrystalline cubic boron nitride, or combinations thereof. In this embodiment, the implantation of the abrasive particles 20 is performed by using a template 30. The template 30 is arranged with a plurality of positioning holes 31 having corresponding apertures for inserting the abrasive particles 20, and 150 μ to 900 μm, the large abrasive particles 23 and the small abrasive particles 24 are inserted into the positioning hole 31, and the polishing end 21 is inserted into the conductive soft layer 12, and the end point 211 is in contact with the plane of the rigid layer 11. 111, the fixed end 22 is exposed outside the conductive soft layer 12, and then the template 30 is removed, leaving the aligned abrasive particles 20 in the conductive soft layer 12, as shown in FIG. 1C . Step 3: As shown in FIG. 1D, a metal layer 40 is formed on the conductive soft layer 12, and the metal layer 40 covers the abrasive particles 20, and combined with the abrasive particles 20, the abrasive particles 20 are fixed to the metal. The layer 40 has a bonding surface 41 away from the temporary substrate 10. In this embodiment, the metal layer 40 is formed on the conductive soft layer 12 by electroplating, but is not limited thereto, and the metal layer 40 is connected to the conductive surface 121 to be combined with the abrasive particles 20 . The material used for the metal layer 40 may be palladium, nickel, chromium, titanium, gold, platinum, stainless steel or a combination thereof. Step 4: As shown in FIG. 1E and FIG. 1F, the rigid layer 11 and the conductive soft layer 12 are removed, so that the abrasive particles 20 inserted into the conductive soft layer 12 are exposed to the polishing end 21, because The large abrasive particles 23 or the small abrasive particles 24, the end point 211 of the polishing end 21 is in the conductive soft layer 12 on the plane 111 opposite to the rigid layer 11, the end points 211 After exposure, an exposed height H having a high uniformity is formed with respect to the metal layer 40, and a polishing plane 70 is formed. Next, the bonding surface 41 is combined with a polishing base 50 to obtain the finishing tool. In this embodiment, the bonding surface 41 is bonded to the polishing base 50 by means of cementing, and epoxy resin, acrylic glue or thermosetting glue is used, and the bonding surface 41 and the grinding base 50 are used. An adhesive layer 60 is formed between the two, but this is merely an example, and the present invention is not limited by the combination. In summary, the dressing tool obtained by the manufacturing method of the present invention can shorten the difference in the exposed height of each of the abrasive particles by first abutting the grinding end against the plane of the rigid layer, so that the exposed height The high consistency can be obtained. When the polishing pad is subjected to the trimming operation, the end point is formed by the grinding plane, so that each of the grinding ends can effectively contact the polishing pad and uniformly grind. The efficiency of the dressing tool is improved. Therefore, the present invention is highly progressive and conforms to the requirements of the invention patent application, and the application is filed according to law, and the praying office grants the patent as soon as possible. The present invention has been described in detail above, but the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the invention. That is, the equivalent changes and modifications made by the scope of the present application should remain within the scope of the patent of the present invention.
10‧‧‧暫時基底
11‧‧‧剛性層
111‧‧‧平面
12‧‧‧導電軟質層
121‧‧‧導電表面
122‧‧‧軟性基板
20‧‧‧研磨顆粒
21‧‧‧研磨端
211‧‧‧端點
22‧‧‧固定端
23‧‧‧大研磨顆粒
24‧‧‧小研磨顆粒
30‧‧‧模板
31‧‧‧定位孔洞
40‧‧‧金屬層
41‧‧‧結合面
50‧‧‧研磨基座
60‧‧‧黏著層
70‧‧‧研磨平面
H‧‧‧露出高度10‧‧‧ Temporary base
11‧‧‧Rigid layer
111‧‧‧ plane
12‧‧‧ Conductive soft layer
121‧‧‧ conductive surface
122‧‧‧Soft substrate
20‧‧‧Abrasive particles
21‧‧‧ grinding end
211‧‧‧Endpoint
22‧‧‧ fixed end
23‧‧‧ Large abrasive particles
24‧‧‧Small abrasive particles
30‧‧‧ Template
31‧‧‧ Positioning holes
40‧‧‧metal layer
41‧‧‧ joint surface
50‧‧‧ Grinding base
60‧‧‧Adhesive layer
70‧‧‧ grinding plane
H‧‧‧Exposed height
圖1A至圖1F,為本發明一實施例的製造流程示意圖。1A to 1F are schematic views showing a manufacturing process according to an embodiment of the present invention.
20‧‧‧研磨顆粒 20‧‧‧Abrasive particles
21‧‧‧研磨端 21‧‧‧ grinding end
211‧‧‧端點 211‧‧‧Endpoint
22‧‧‧固定端 22‧‧‧ fixed end
23‧‧‧大研磨顆粒 23‧‧‧ Large abrasive particles
24‧‧‧小研磨顆粒 24‧‧‧Small abrasive particles
40‧‧‧金屬層 40‧‧‧metal layer
41‧‧‧結合面 41‧‧‧ joint surface
50‧‧‧研磨基座 50‧‧‧ Grinding base
60‧‧‧黏著層 60‧‧‧Adhesive layer
70‧‧‧研磨平面 70‧‧‧ grinding plane
H‧‧‧露出高度 H‧‧‧Exposed height
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106826601A (en) * | 2017-01-26 | 2017-06-13 | 北京清烯科技有限公司 | The method of CMP pad dresser of the manufacture with bitellos monocrystalline |
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CN106826601A (en) * | 2017-01-26 | 2017-06-13 | 北京清烯科技有限公司 | The method of CMP pad dresser of the manufacture with bitellos monocrystalline |
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