TW201545237A - Semiconductor package method and heat equipment disposed in the semiconductor package equipment - Google Patents

Abstract

The invention provides semiconductor package method and heat equipment disposed in the semiconductor package equipment. The method comprises the following steps of: provide the substrate with the first and the second surface; provide a heat equipment, comprising a composite ceramic board for being in contact with the second surface of the substrate; heating the heat equipment and transmitting the heat energy homogeneously from a composite ceramic board to the substrate. The composite ceramic board has the characteristics of keeping the temperature uniform and warmth without heating repeatedly. Thus, the composite ceramic board provides the heating device with prolonged service life and has the efficacy of power saving.

Description

Semiconductor packaging method and heating fixture disposed in semiconductor packaging equipment

The present invention relates to a heating fixture, and more particularly to a heating fixture for use in a semiconductor packaging device, and a packaging process using the same.

With the rapid development of science and technology, various new products are constantly being introduced, and this has created a highly competitive situation. In order to meet the needs of consumers, all kinds of electronic products are now moving towards light, thin, short and small development, and also hope that electronics Products can combine low-cost, high-performance, low-power, multi-functional and other product features, so the industry continues to develop new processes or new materials to improve the shortcomings of the current situation, including low yield, complex process, energy consumption (electricity Disadvantages, such as loss, in order to reduce costs and increase product gross margin, so that products are competitive.

At present, the electrical connection technology for attaching a semiconductor wafer to a package substrate is mainly in the form of wire bonding or flip chip. Although the flip-chip connection has the advantages of high electrical transmission speed and the thickness of the package structure after packaging, the electrode pad based on the semiconductor wafer is expensive, the package structure yield quality and the end product demand (may only need Wire-wound package structure can be a problem, so wire-wound packages still have a place in the demand for today's electronic products.

In the conventional wire-bonding process of the wafer manufacturing process, the spacing of the inner conductive lines is gradually shortened, resulting in a closer spacing of the pads (I/O pads) on the wafer, and because of advanced process technology, different functions are The components are integrated into the same wafer, the degree of integration of the wafer is greatly increased, and the number of pads on the wafer is relatively increased. The chip packaging technology is to solder the pad of the wafer to the substrate via the bonding wire. However, the number of such highly integrated wafer pads and bonding wires has become a place of concern in the process. In the traditional wire bonding process, heating is required. A hot plate (usually steel) is placed on the fixture, and a metal heat transfer member (usually copper) is further placed in the steel. Even if copper or other metal has good heat transfer properties, the thermal expansion coefficient is too large and heat retention. Poor performance, the quality of the wire can not be effectively improved, causing some of the bumps on the bottom of the wafer to be soldered to the pads on the substrate, resulting in the formation of voids in some of the bumps located near the edge of the wafer, resulting in solder failure or The problem of incomplete soldering, such as false soldering, also increases the defect rate of the product.

Moreover, the heating jig used in the conventional wire bonding is complicated to manufacture, and multiple components are required to be assembled together, which is not integrally formed, resulting in poor thermal conductivity and high cost.

In view of the above-mentioned various deficiencies of the prior art, it is an object of the present invention to provide a heating jig for use in a semiconductor packaging device, which can avoid the problem of incomplete soldering failure or soldering in the case of wafer bonding.

In order to solve the above problems of the prior art, an object of the present invention is to provide a heating fixture disposed on a semiconductor packaging device, which can reach an operating temperature in a very short time and can shorten the standby time of the wire bonding machine. In addition, the heating fixture of the present invention comprises a composite ceramic hot plate and can be integrally formed, which can be used to carry a substrate and a wafer connected to the substrate, and transfer thermal energy to the substrate and the wafer, in addition to excellent uniformity. It can solve the problem of thermal expansion coefficient between different metal materials; at the same time, it has further good temperature uniformity and heat preservation. Therefore, when the wire bonding of the semiconductor element is performed by using the heating jig of the present invention, the flatness of the bonding wire can be maintained, so that the yield of the wire bonding process is greatly improved; moreover, since the composite ceramic hot plate of the present invention has a good average Temperature and heat preservation, so in the packaging process, the heating seat does not need to be repeatedly heated, so in addition to increasing the life of the heating seat, it also has the effect of energy saving. Moreover, due to the uniform temperature of the composite ceramic hot plate of the present invention, when the size of the composite ceramic hot plate becomes larger, the temperature difference between the center and the surrounding portion of the composite ceramic hot plate is not excessively increased, and the quality of the bonding wire and the solder joint can be significantly improved. Stability, so it is suitable for the packaging of high-order wafers.

The heating fixture of the present invention configured on the packaging apparatus comprises at least one composite ceramic hot plate and a heating seat integrally connected with the composite ceramic hot plate. Usually, in order to heat the composite ceramic hot plate, the heating fixture further includes a heating seat.

Another object of the present invention is to provide a semiconductor packaging method comprising the steps of: providing a carrier having a first surface and a second surface; providing a wafer, the wafer being disposed on the first surface of the substrate; A semiconductor packaging device, wherein the semiconductor packaging device can be a wire bonding machine; a heating fixture is provided, and the heating fixture is disposed in the semiconductor packaging device, wherein the heating fixture is provided with a composite ceramic hot plate, and the second substrate is The surface is in contact with the composite ceramic hot plate on the heating fixture; the heating fixture is heated such that the heat is uniformly transferred to the substrate and the wafer via the composite ceramic hot plate on the heating fixture.

1‧‧‧heating fixture
10‧‧‧heating seat
11‧‧‧Composite ceramic hot plate
12‧‧‧ suction holes
13‧‧‧ convex
20‧‧‧Substrate
20a‧‧‧ first surface
20b‧‧‧second surface
21a‧‧‧First barrier layer
21b‧‧‧second barrier layer
201‧‧‧ Groove
202‧‧‧metal block
202a‧‧‧ solder pads
202b‧‧‧ wafer pad
203‧‧‧ plating
22‧‧‧ wafer
23‧‧‧welding line
24a‧‧‧First colloid
24b‧‧‧Second colloid

Fig. 1A is a cross-sectional view showing a heating jig disposed on a packaging apparatus according to a first embodiment of the present invention.
1A' is a top view of a heating fixture disposed on a packaging apparatus according to a first embodiment of the present invention.
Fig. 1B is a cross-sectional view showing a heating jig disposed on a packaging apparatus according to a second embodiment of the present invention.
FIG. 1B' is a top view of a heating fixture disposed on a packaging apparatus according to a second embodiment of the present invention.
1C is a schematic view showing a heating jig disposed on a packaging device according to a third embodiment of the present invention.
1D is a schematic view of a heating fixture disposed on a packaging device according to a fourth embodiment of the present invention.
2A to 2F are schematic views showing a process of using the heating jig of the fifth embodiment of the present invention on a semiconductor package device.

The structures, proportions, sizes, and the like of the present invention are only used to cope with the contents disclosed in the specification, and can be understood by those having ordinary knowledge in the related art, and therefore, the following description is not used. The limited conditions that can be implemented by the present invention are defined, and only the semiconductor package method of the present invention and the special function realization of the heat fixture applied to the method are described in detail. In addition, the drawings in the following texts are not completely drawn in accordance with actual relevant dimensions, and their function is only to show a schematic diagram relating to the features of the present invention.

Please refer to FIG. 1A, which is a cross-sectional view of a heating fixture disposed on a packaging device of the present invention. In the process of performing electrical connection (for example, wire bonding) of a semiconductor device, the semiconductor component is usually placed on a substrate (for example, a circuit substrate), and the pad on the semiconductor component is passed through the metal component ( For example, metal wires or metal bumps are electrically connected to metal contacts on the circuit substrate. In order to increase the yield of the electrical connection, the substrate and the semiconductor component to be electrically connected are placed on a heating plate (for example, the heating fixture 1), so that when the electrical connection is made, the substrate is timely The semiconductor element is heated.

Continuing to refer to FIG. 1A, which is a cross-sectional view of a heating fixture disposed on a packaging apparatus according to a first embodiment of the present invention, the heating fixture 1 of FIG. 1A includes at least one composite ceramic hot plate 11, each of which The material of the composite ceramic hot plate 11 may be formed by one of tantalum carbide (SiC) or aluminum nitride (AlN); or the tantalum carbide (SiC) and aluminum nitride (AlN) may be produced at different ratios. The ratio can be 10:90, 20:80, 30:70, 40:60, 50:50, 60:40, 70:30, 80:20, 90:10, and the composite ceramic hot plate 11 is not limited to its shape. And can be formed in one piece. The heating fixture 1 further includes a heating base 10 for heating the composite ceramic hot plate 11.

Please refer to FIG. 1A' for a top view of the heating fixture disposed on the packaging device according to the first embodiment of the present invention. According to the description of FIG. 1A, the composite ceramic hot plate 11 may further be provided with a plurality of suction holes 12 . The substrate carried on the composite ceramic hot plate 11 can be evacuated by the suction holes 12 to improve the adhesion between the substrate and the composite ceramic hot plate 11. The shape of the suction hole 12 is not limited to the X shape in the first AA', but may be a T shape, a Y shape, a Z shape, a circular shape or the like, and may be changed according to the size, shape, and process requirements of the substrate, and The number and position of the holes 12 on the composite ceramic hot plate 11 are also not limited thereto, and may be changed according to the size of the substrate. For example, in FIG. 1A', a rectangular substrate may be disposed on the composite ceramic hot plate 11 and covered. Hole 12.

Please refer to FIG. 1B , which is a cross-sectional view of a heating fixture disposed on a packaging device according to a second embodiment of the present invention. According to the description of FIG. 1A , at least one convex can be disposed on the composite ceramic hot plate 11 . The portion 13 can be used to carry the substrate and the semiconductor element. In another embodiment, a plurality of protrusions 13 can be disposed on the composite ceramic hot plate 11 while carrying a plurality of substrates and semiconductor elements.

Please refer to FIG. 1B' for a top view of the heating fixture disposed on the packaging device according to the second embodiment of the present invention. According to the description of FIG. 1B, the convex portion 13 may further be provided with a plurality of suction holes 12, so that The substrate carried on the convex portion 13 can be evacuated by the suction hole 12 to improve the adhesion between the substrate and the convex portion 13. The shape of the suction hole 12 is not limited to the X shape in the first B' figure, and may be a T shape, a Y shape, a Z shape, a circular shape or the like, and may be changed according to the size, shape, and process requirements of the substrate, and The number and position of the holes 12 provided on the projections 13 are also not limited thereto.

Please refer to FIG. 1C , which is a schematic diagram of a heating fixture disposed on a packaging device according to a third embodiment of the present invention. According to the description of FIG. 1A , a plurality of substrates 20 can be further carried on a single composite ceramic hot plate 11 . Each of the substrates 20 is adjacent to a spaced apart distance and arranged in parallel, wherein each of the substrates 20 includes a plurality of wafers 22.

Please refer to FIG. 1D , which is a schematic diagram of a heating fixture disposed on a packaging device according to a fourth embodiment of the present invention. The plurality of composite ceramic hot plates 11 can select a ceramic hot plate 11 according to a packaging process to be performed by the packaging device. The arrangement manner is such that a plurality of composite ceramic hot plates 11 can be arranged in a parallel direction (X-axis), or an array of composite ceramic hot plates 11 can be arranged in a parallel direction (X-axis) and a vertical direction (Y-axis). Heat the fixture 1. The heating fixture 1 can be used to carry the substrate 20 and the semiconductor component. The substrate 20 can include a plurality of wafers 22, and the number of the wafers 22 on the substrate 20 corresponding to each composite ceramic hot plate 11 is not limited, and can be set. 3, 6, 9 or more than 22 wafers. And the composite ceramic hot plate 11 can be directly heated by a heating device on the packaging device to uniformly transfer heat to the substrate and the semiconductor element via the composite ceramic hot plate 11. In a preferred embodiment, a plurality of composite ceramic hot plates 11 are further disposed on a heating base 10; therefore, when the packaging device performs an electrical connection process between the substrate and the semiconductor component, the heating device can be used for the heating block. After heating, the heat is transferred to each of the composite ceramic hot plates 11 and then uniformly transferred from the composite ceramic hot plate 11 to the substrate and the semiconductor element. Because the composite ceramic hot plate 11 has uniform temperature and heat preservation, the packaging equipment can reach the working temperature in a very short time, shorten the standby time, and has an excellent average temperature, in addition to increasing the flatness of the wire bonding process. In addition to improving the yield, the composite ceramic hot plate 11 can not cause the temperature difference between the center and the surrounding portion of the composite ceramic hot plate 11 to be too large when the size is increased, and the quality and stability of the electrical connection process are remarkably improved.

Next, please refer to FIGS. 2A to 2F, which are schematic diagrams of processes for using the heating fixture 1 of the present invention on a semiconductor packaging device. First, as shown in FIG. 2A, a substrate 20 may be made of a metal such as copper, gold, silver, iron or aluminum. The substrate 20 has a first surface 20a and a second surface 20b opposite to each other, and a semiconductor element (for example, a wafer). It can be disposed on the first surface 20a of the substrate 20.

Next, as shown in FIG. 2B, a patterned first resist layer 21a is formed on the first surface of the substrate 20, so that the patterned first resist layer 21a defines the pad and the wafer position, and then the substrate 20 The second surface is covered with the second resist layer 21b.

Then, as shown in FIG. 2C, a portion of the substrate 20 not covered by the first resist layer 21a is removed by a half etching process, thereby forming a plurality of recesses 201 and a plurality of metal blocks 202 on the first surface 20a of the substrate 20, wherein Each of the recesses 201 and the respective metal blocks 202 are adjacent to each other. Then, after the first resist layer 21a and the second resist layer 21b are removed, the positions of the pads 202a and the wafer pads 202b can be formed on the substrate 20, and In a preferred embodiment, the area of the wafer pad 202b is greater than the area of the pad 202a.

Next, as shown in FIG. 2D, the filling of the groove 201 is performed. The filler filled in the recess 201 may be a first colloid 24a of one or more of a molding compound, a solder mask, or a polymer material such as an epoxy resin, and is completed first. After the colloid 24a, the metal pads 202 of the pad 202a and the wafer pad 202b are exposed. Next, an upper surface of the exposed metal block 202 is covered with an oxidation resistant plating layer 203 by a spotting plating method, and the oxidation resistant plating layer 20 may be a silver-containing plating layer 203; or an exposed metal block in a immersion manner. An organic solderability preservative (OSP) is formed on the upper surface of the 202 to electrically connect the wafer 22 to the plating layer 203 on the metal block 202 through the bonding wires 23.

Then, as shown in FIGS. 2E to 2F, the bonding wires 23 are joined by a wire bonding machine (not shown) to electrically connect the wafer 22 and the metal block 202, and the heating fixture 1 of the wire bonding machine includes at least one. The composite ceramic hot plate 11 and the composite ceramic hot plate 11 are made of one of tantalum carbide (SiC) and aluminum nitride (AlN), or are made at different ratios, and the ratio of the tantalum carbide to the aluminum nitride can be made. 10:90, 20:80, 30:70, 40:60, 50:50, 60:40, 70:30, 80:20, 90:10, and the composite ceramic hot plate 11 is not limited in its shape, and Can be formed in one piece. The composite ceramic hot plate 11 is used for carrying and transferring thermal energy to the object to be wired. The object to be wired may be the wafer 22, the substrate 20, etc., and the composite ceramic hot plate 11 is connected with the substrate 20 of the wafer 22 for wire bonding machine. On the wafer 22 and the substrate 20. Usually, in order to heat the composite ceramic hot plate 11, the heating fixture 1 of the wire bonding machine further includes a heating base 10. The composite ceramic hot plate 11 has excellent properties such as low thermal expansion coefficient, high thermal conductivity, thermal shock resistance, high corrosion resistance and thermal insulation, so that the working temperature can be reached in a very short time, the change time is shortened, and an excellent average is obtained. The temperature makes the flatness of the bonding wire 23 greatly improve the yield, and does not cause the temperature difference between the center and the surrounding portion to be too large due to the large size of the composite ceramic hot plate 11, thereby significantly improving the quality of the bonding wire 23 and the stability of the solder joint; Since the composite ceramic hot plate 11 of the present invention has good temperature uniformity and heat preservation property, the heating base 10 does not need to be repeatedly heated, thereby reducing the number of repeated operations of the heating base 10, and having the effect of energy saving; The low thermal expansion coefficient of the composite ceramic hot plate 11 causes warpage between the contact substrate 20 without thermal expansion due to high temperature to affect the heat transfer effect, and the thermal shock resistance of the composite ceramic hot plate 11 avoids the wire bonding machine. The vibration caused by the stage when the wire is hit, affecting the heat transfer effect and causing incomplete welding such as welding failure or false welding.

As shown in FIG. 2E to FIG. 2F, the bonding (Die Bonding; D/B), wire bonding (W/B), and the package molding process (Molding) are performed; the upper surface of the first colloid 24a corresponds to the wafer pad. The wafer 22 is connected to the wafer 22, and the wafer 22 and the metal block 202 corresponding to the position of the bonding pad 202a are electrically connected by the bonding wire 23, and the second surface of the first bonding body 24a and the metal block 202 is formed to cover the second surface of the wafer 22. Colloid 24b.

It is to be noted that the wire bonding process disclosed in the above-mentioned FIG. 2A to FIG. 2F is one of the embodiments of the heating jig 1 to which the present invention is applied. In addition, the heating jig 1 of the present invention can be further used in flip chip. In the process of (Flip Chip), similarly, bumps on the crystal grains can be formed into a good electrical connection with the substrate.

According to the semiconductor package process described above, the semiconductor package of the present invention comprises: a plurality of metal blocks 202 spaced apart from each other; a first colloid 24a having opposite upper and lower surfaces covering the side of the plurality of metal blocks 202 And the upper surface of the upper surface of each of the metal blocks 202 is exposed to the upper surface of the first colloid 24a; the wafer 22 is attached to the upper surface of the first colloid 24a, and is electrically connected to the metal block 202; and the second colloid 24b is disposed on The upper surface of the first colloid 24a is coated with the wafer 22 and the bonding wire 23. The upper surface of the metal block 202 is provided with an oxidation resistant coating, such as a plating layer 203 of silver or an organic solderable protective film, for the wafer 22 to pass through the bonding wire 23. The layer 203 is attached to the metal block 202.

While the present invention has been described above in terms of the preferred embodiments thereof, it is not intended to limit the present invention, and those skilled in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of patent protection of the present invention is defined by the scope of the patent application attached to the specification.

1‧‧‧heating fixture

10‧‧‧heating seat

11‧‧‧Composite ceramic hot plate

Claims (9)

A heating fixture disposed in a semiconductor packaging device, comprising:
At least one integrally formed composite ceramic hot plate is used to carry a substrate and a wafer connected to the substrate, and transfer thermal energy to the substrate and the wafer. The heating fixture disposed in the semiconductor packaging device according to the first aspect of the patent application, wherein the composite ceramic hot plate is further in contact with a heating seat. The heating fixture disposed in the semiconductor packaging device according to the first aspect of the patent application, wherein the composite ceramic hot plate is made of one of tantalum carbide and aluminum nitride. The heating fixture disposed in the semiconductor packaging device according to the first aspect of the patent application, wherein the composite ceramic hot plate is made of tantalum carbide and aluminum nitride at different ratios, and the ratio is 10: 90, 20:80, 30:70, 40:60, 50:50, 60:40, 70:30, 80:20, 90:10. A semiconductor packaging method comprising:
Providing a substrate having a first surface and an opposite second surface;
Providing a wafer disposed on the first surface of the substrate;
Providing a semiconductor packaging device;
Providing a heating fixture, and arranging the heating fixture in the semiconductor packaging device, wherein the heating fixture is provided with one or at least one composite ceramic hot plate, and the second surface of the substrate and the heat treatment Composite ceramic hot plate contact;
The heating fixture is heated such that heat is evenly transferred to the substrate and the wafer via the composite ceramic hot plate on the heated fixture. The semiconductor package method of claim 5, wherein the composite ceramic hot plate is further in contact with a heating seat. The semiconductor package method of claim 5, wherein the composite ceramic hot plate is made of one of tantalum carbide and aluminum nitride. The semiconductor package method of claim 5, wherein the composite ceramic hot plate is made of tantalum carbide and aluminum nitride at different ratios, and the ratio is 10:90, 20:80, 30. : 70, 40: 60, 50: 50, 60: 40, 70: 30, 80: 20, 90: 10. The semiconductor package method of claim 5, wherein the semiconductor package device is a wire bonding machine.