TW201542885A - Substrate treatment method and substrate treatment jig - Google Patents

Abstract

In the present invention, a substrate treatment method includes: supplying an alignment solution to the entire surface of a substrate on which a plurality of semiconductor chips have been formed; arranging a counter substrate, in which alignment solution discharge holes penetrating through the thickness direction have been formed, over the substrate with the alignment solution therebetween; discharging the alignment solution by capillary action to the upper surface side of the counter substrate via the alignment solution discharge holes from scribe lines between the semiconductor chips, and in the area between the counter substrate and the substrate, supplying air to spaces formed on the scribe lines to form a gas-liquid interface between margins of the semiconductor chips and the counter substrate; and adjusting the position of the counter substrate relative to the substrate, by the surface tension of the alignment solution at the gas-liquid interface.

Description

Substrate processing method and substrate processing fixture (Reciprocal reference of related applications)

The present application is based on Japanese Patent Application No. 2014-051115, filed on Jun.

The present invention relates to a substrate processing method for performing specific processing on a substrate on which a plurality of semiconductor wafers are formed, and a substrate processing jig used in the substrate processing method.

In recent years, high performance of semiconductor devices has been demanded, and semiconductor elements have been highly integrated. In this case, when a plurality of highly integrated semiconductor elements are arranged in a horizontal plane and the semiconductor elements are connected by wiring to manufacture a semiconductor device, the wiring length is increased, thereby causing wiring. The resistance becomes large and the wiring delay increases.

Therefore, a three-dimensional integrated technique in which a semiconductor element is three-dimensionally laminated has been proposed. In the three-dimensional integrated technique, a plurality of semiconductor wafers (hereinafter referred to as "wafers") having a plurality of electronic circuits formed on the front surface by thinning the back surface are formed, for example, An electrode having a fine diameter of 100 μm or less, a so-called through electrode (TSV: Through Silicon Via). Further, the stacked wafers are electrically connected via the through electrodes.

Various types of research have been made on the formation of the above-mentioned through electrodes. For example, in Patent Document 1, it is proposed to form a through electrode by performing electrolytic plating in a through hole of a wafer, for example, using a template having a flow path such as a plating solution. Specifically, first, after supplying an alignment liquid (pure water) to an alignment region of the wafer surface, the template is placed opposite to the wafer, by the The surface tension of the alignment liquid causes the restoring force to act on the template to perform positional adjustment of the template and the wafer. Thereafter, the plating solution is supplied from the flow path of the template to the through hole of the wafer by capillary action, and the electrode on the template side is used as the anode, and the counter electrode on the wafer side is used as the cathode, and a voltage is applied to the through hole. A plating treatment is performed to form a through electrode in the through hole.

When the stencil is used to perform specific processing on the wafer in this way, the position adjustment of the stencil and the wafer is required. As a method of adjusting the position, for example, Patent Document 2 proposes a method of supplying an alignment liquid (pure water) from a pattern of alignment of a flow path of a template to a surface of a wafer after the template is placed opposite to the wafer. ). In this case, the positional adjustment of the template and the wafer is also performed by applying the restoring force to the template by the surface tension of the alignment liquid.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2013-108111

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2013-138123

However, in the case of using the position adjustment method described in Patent Document 1, it is necessary to supply the alignment liquid to a plurality of minute alignment regions on the wafer surface. Therefore, it is difficult to appropriately supply the alignment liquid to each of the alignment regions.

Further, in the case of using the position adjustment method described in Patent Document 2, it is necessary to supply the alignment liquid to the alignment pattern from the flow path having the minute diameter of the template. It is difficult for the alignment liquid to flow in the flow path of the minute diameter. Further, in the opening portion on the wafer side of the flow path, surface tension acts on the alignment liquid, and it is difficult to bring the alignment liquid into contact with the wafer.

As described above, there is room for improvement in the positional adjustment of the template and the wafer when the wafer is specifically processed using the template.

The present invention has been made in view of the above circumstances, and an object thereof is to appropriately perform a substrate The position of the fixture and the substrate is adjusted, and the substrate processing using the substrate processing jig is appropriately performed.

In order to achieve the above object, the present invention is a substrate processing method for performing specific processing on a substrate on which a plurality of semiconductor wafers are formed, and includes: a first step of the substrate on which the plurality of semiconductor wafers are formed The alignment liquid is supplied to the entire surface; in the second step, the opposite substrate on which the alignment liquid discharge hole penetrating in the thickness direction is formed is placed on the substrate via the alignment liquid; and the third step is to use the capillary tube a phenomenon in which the alignment liquid is discharged from the scribe line between the semiconductor wafers toward the upper surface side of the opposite substrate via the alignment liquid discharge hole, and a space formed on the scribe line between the opposite substrate and the substrate Supplying air to form a gas-liquid interface between the peripheral portion of the semiconductor wafer and the opposite substrate; and a fourth step of performing the above-described alignment by the surface tension of the alignment liquid in the gas-liquid interface The position of the substrate relative to the substrate is adjusted.

According to the invention, after the alignment liquid is supplied to the entire surface of the substrate, only the alignment liquid existing on the scribe line is discharged to the upper surface side of the counter substrate via the alignment liquid discharge hole by the capillary phenomenon. At the same time, air is supplied between the opposite substrate and the substrate to the space formed on the scribe line, thereby forming a gas-liquid interface between the peripheral portion of the semiconductor wafer and the opposite substrate. Further, by the surface tension of the alignment liquid in the gas-liquid interface, the restoring force for moving the counter substrate acts, and the positional adjustment of the counter substrate with respect to the substrate is performed with high precision. As described above, in the present invention, since the alignment liquid is supplied to the entire surface of the substrate, the difficulty in supplying the previous alignment liquid is eliminated, and the positional adjustment between the counter substrate and the substrate can be appropriately and easily performed. Further, since the positional adjustment of the counter substrate and the substrate is appropriately performed as described above, the subsequent substrate processing can be appropriately performed.

A liquid escape hole penetrating in the thickness direction may be formed on the opposite substrate, and a liquid escape groove communicating with the liquid escape hole may be provided on the upper surface of the opposite substrate, in the fifth step , using the capillary phenomenon to the above alignment liquid or the above treatment liquid The semiconductor wafer is discharged to the liquid escape groove through the liquid escape hole, thereby maintaining the arrangement of the opposite substrate with respect to the substrate. Furthermore, the substrate can be adsorbed to the counter substrate by the escaping force generated by the immersion liquid or the treatment liquid between the semiconductor wafer and the counter substrate by the liquid escaping mentioned herein.

Another aspect of the present invention is a substrate processing jig for performing a specific processing on a substrate on which a plurality of semiconductor wafers are formed, and forming an alignment liquid discharge hole penetrating in a thickness direction. The aligning liquid is supplied to the entire surface of the substrate of the plurality of semiconductor wafers, and the substrate processing jig is placed on the substrate via the alignment liquid. The alignment liquid discharge holes are formed in the following manner: using capillary phenomenon The aligning liquid is discharged from the scribe line between the semiconductor wafers to the upper surface side of the substrate processing jig via the alignment liquid discharge hole, and a space formed on the dicing street between the substrate processing jig and the substrate Air is supplied to form a gas-liquid interface between the peripheral portion of the semiconductor wafer and the substrate processing jig. Furthermore, the substrate processing jig of the present invention comprises the opposite substrate of the above invention.

According to the present invention, the positional adjustment of the substrate processing jig and the substrate can be appropriately and easily performed, and the substrate processing using the substrate processing jig can be appropriately performed.

10‧‧‧ wafer

10a‧‧‧ positive

10b‧‧‧back

11‧‧‧ wafer

12‧‧‧ cutting road

12a‧‧‧ Wafer side opening

13‧‧‧through holes

14‧‧‧ Wafer-side electrode

20‧‧‧ template

20a‧‧‧ positive

20b‧‧‧back

21‧‧‧Processing area

22‧‧‧Air supply ditch

22a‧‧‧Template side opening

23‧‧‧ alignment liquid discharge hole

24‧‧‧ alignment liquid discharge tank

24a‧‧‧ rill

25‧‧‧ plating solution supply hole

26‧‧‧ plating solution discharge hole

27‧‧‧ plating solution supply tank

27a‧‧‧ rill

28‧‧‧ plating solution draining tank

28a‧‧‧ rill

29‧‧‧Template side electrode

30‧‧‧ Keeping institutions

40‧‧‧ space

50‧‧‧DC power supply

60‧‧‧through electrodes

60a‧‧‧copper plating

70‧‧‧Indirect electrode

71‧‧‧Electrode

72‧‧‧Insulator

73‧‧‧ switch

80‧‧‧ alignment liquid escape hole

81‧‧‧ alignment liquid escape slot

81a‧‧‧ rill

A‧‧‧Air

F‧‧‧ gas-liquid interface

M‧‧‧ plating solution

P‧‧‧ alignment fluid

Fig. 1 is a plan view showing the outline of a structure of a wafer.

Fig. 2 is a schematic longitudinal cross-sectional view showing the structure of a wafer.

Fig. 3 is a plan view showing a schematic configuration of a template.

Fig. 4 is a schematic longitudinal cross-sectional view showing the configuration of a template.

Fig. 5 is a plan view showing a schematic configuration of an alignment liquid discharge tank, a plating solution supply tank, and a plating liquid discharge tank.

Fig. 6 is an explanatory view showing a state in which an alignment liquid is supplied to the entire surface of the wafer.

Fig. 7 is an explanatory view showing a state in which a template is placed opposite to a wafer.

Fig. 8 is an explanatory view showing a state in which the alignment liquid enters the alignment liquid discharge hole through the air supply groove.

Fig. 9 is an explanatory view showing a state in which the alignment liquid passes through the air supply groove into the alignment liquid discharge hole in a plan view.

Fig. 10 is an explanatory view showing a state in which a gas-liquid interface is formed between a wafer and a processing region.

Fig. 11 is an explanatory view showing a state in which a template is viewed in a plan view when a gas-liquid interface is formed between a wafer and a processing region.

Fig. 12 is an explanatory view showing a state in which the holding of the template by the holding mechanism is released.

Fig. 13 is an explanatory view showing a state in which the wafer and the template are positionally adjusted.

Fig. 14 is an explanatory view showing a state in which a DC power source is connected to a wafer side electrode and a template side electrode.

Fig. 15 is an explanatory view showing a state in which an alignment liquid between a wafer and a processing region is replaced with a plating solution.

Fig. 16 is an explanatory view showing a state in which the alignment liquid between the wafer and the processing region has been replaced with a plating solution.

Fig. 17 is an explanatory view showing a state in which copper plating is deposited in the through hole.

Fig. 18 is an explanatory view showing a state in which a through electrode is formed in a through hole.

Fig. 19 is a longitudinal cross-sectional view showing the outline of a configuration of a template in another embodiment.

Fig. 20 is a plan view showing the arrangement of the template side electrodes in the other embodiment.

Fig. 21 is a longitudinal sectional view showing the outline of a configuration of a template in another embodiment.

Fig. 22 is an explanatory view showing a state in which an indirect electrode is connected to a power source in another embodiment.

Fig. 23 is an explanatory view showing a state in which an indirect electrode is connected to a template side electrode in another embodiment.

Fig. 24 is a plan view showing the outline of a configuration of a template in another embodiment.

Fig. 25 is a longitudinal sectional view showing the outline of a configuration of a template in another embodiment.

Fig. 26 is a plan view showing the outline of the configuration of the alignment liquid escape groove in the other embodiment.

Fig. 27 is an explanatory view showing a state in which a template is adsorbed to a wafer in another embodiment.

Hereinafter, embodiments of the present invention will be described. In the present embodiment, as a process performed on a wafer as a substrate of the present invention, a plating process for forming a through electrode formed in a through hole formed in a wafer, and a wafer used in the plating process are used. The configuration of the template as the substrate processing jig (opposing substrate) will be described together. In addition, in the drawings used in the following description, since the ease of technical understanding is prioritized, the size of each component does not necessarily correspond to the actual size.

First, the configuration of the wafer and the template used in the plating process of the present embodiment will be described. As shown in FIGS. 1 and 2, a semiconductor wafer 11 (hereinafter referred to as "wafer 11") and a dicing street 12 are formed on the front surface 10a of the wafer 10. The wafer 11 is uniformly formed in a plurality of planes in the wafer surface. The dicing street 12 extends between the plurality of wafers 11, 11 and is formed in a lattice shape. Further, the scribe line 12 is formed lower than the wafer 11. Further, the scribe line 12 is opened on the side surface of the wafer 10, and the wafer side opening portion 12a is formed. Further, the scribe line is a lane in which a wafer is cut and divided into a plurality of semiconductor wafers.

Each of the wafers 11 is formed with a through hole 13 extending in the thickness direction from the front surface 10a of the wafer 10 to the side of the back surface 10b. Further, in the present embodiment, the through hole 13 does not penetrate the wafer 10. However, since the back surface 10b of the wafer 10 is thinned and penetrated after a specific process, it is referred to as a "through hole" for the sake of convenience. . A wafer side electrode 14 corresponding to the template side electrode 29 of the template 20 to be described later is provided on the back surface 10b side of the through hole 13. Further, in the wafer 11, an electronic circuit, a wiring, or the like is formed in addition to the through hole 13 and the wafer side electrode 14.

The template 20 shown in FIGS. 3 and 4 has, for example, a substantially disk shape and has the same shape as that of the wafer 10 in plan view. The template 20 is made of, for example, tantalum carbide (SiC) or the like. again 4 shows a state in which the template 20 is disposed opposite to the wafer 10 as follows, the front surface 20a is located on the lower side, and the back surface 20b is located on the upper side.

On the front surface 20a of the template 20, a processing region 21 for plating the wafer 11 using a plating solution as a processing liquid is formed. The processing region 21 is formed in plural at positions corresponding to the plurality of wafers 11 of the wafer 10. Further, as the plating solution, for example, a mixed solution obtained by dissolving copper sulfate and sulfuric acid is used.

Further, an air supply groove 22 is formed on the front surface 20a of the template 20. The air supply groove 22 extends between the plurality of processing regions 21 and 21 and is formed in a lattice shape at a position corresponding to the dicing street 12 of the wafer 10. The air supply groove 22 is opened on the side surface of the template 20, and a template side opening portion 22a is formed. Further, the air supply groove 22 is formed to penetrate the template 20 in the surface direction. Further, the air supply groove 22 has a groove shape which is recessed from the front surface 20a and is formed lower than the treatment area 21. Further, in a state where the template 20 and the wafer 10 are opposed to each other, the air supply groove 22 can supply air to the dicing street 12. Further, the position or shape of the air supply groove 22 is not limited to this embodiment, and any air can be supplied to the cutting path 12, and can be arbitrarily designed.

In the template 20, a plurality of alignment liquid discharge holes 23 for discharging the alignment liquid are formed. The alignment liquid discharge hole 23 is a thin tube that penetrates from the front surface 10a to the back surface 10b in the thickness direction. Further, the alignment liquid discharge hole 23 communicates with the air supply groove 22. That is, the alignment liquid discharge hole 23 is formed to be positioned directly above the dicing street 12 in a state in which the stencil 20 and the wafer 10 are opposed to each other. Further, as the alignment liquid, for example, pure water is used.

The alignment liquid discharge grooves 24 are provided in the alignment liquid discharge holes 23 in communication with the alignment liquid discharge holes 23. The alignment liquid discharge groove 24 is provided on the back surface 20b of the template 20. The alignment liquid discharge tank 24 is a storable tank for discharging the alignment liquid and has a specific volume for accommodating the alignment liquid. In the present embodiment, as shown in FIG. 5, the alignment liquid discharge groove 24 has a rill structure in which a plurality of narrow grooves 24a are branched from the alignment liquid discharge holes 23. Further, the configuration of the inside of the alignment liquid discharge groove 24 is not limited thereto, and can be arbitrarily designed. For example, the alignment liquid discharge groove 24 may be formed of a porous body. For the alignment liquid that enters the porous body through the alignment liquid discharge hole 23, the capillary is now Like to play a role. If the sponge absorbs water, the porous body also absorbs the alignment liquid, so that the self-aligning liquid discharge groove 24 functions as an alignment liquid.

The alignment liquid discharge hole 23 and the alignment liquid discharge groove 24 are designed in such a manner that, in a state in which the template 20 and the wafer 10 are opposed to each other, the alignment liquid is ejected from the cutting path 12 through the alignment liquid discharge hole by capillary action. 23 flows to the alignment liquid discharge tank 24. For example, if the width of the scribe line 12, the diameter of the alignment liquid discharge hole 23, and the width of the narrow groove 24a of the alignment liquid discharge groove 24 are gradually reduced, the alignment liquid is caused to have a capillary phenomenon. Therefore, the alignment liquid can be discharged without using a force other than a pump or the like.

As shown in FIG. 3 and FIG. 4, in the template 20, a plating liquid supply hole 25 as a processing liquid supply hole for supplying a plating liquid, and a plating liquid discharge hole as a processing liquid discharge hole for discharging a plating liquid are formed. 26. The plating solution supply hole 25 and the plating solution discharge hole 26 are thin tubes that penetrate from the front surface 20a to the back surface 20b in the thickness direction, and are opened to the front surface 20a. Further, a plating liquid supply hole 25 and a plating liquid discharge hole 26 are provided in each of the processing regions 21, respectively.

In each of the plating solution supply holes 25, a plating solution supply tank 27 as a processing liquid supply tank is provided in communication with the plating solution supply hole 25. Further, in each plating liquid discharge hole 26, a plating liquid discharge groove 28 as a processing liquid discharge tank is also provided in communication with the plating liquid discharge hole 26. The plating solution supply tank 27 and the plating solution discharge tank 28 are provided on the back surface 20b of the template 20, respectively.

The plating solution supply tank 27 is a storable tank for supplying a plating liquid. In the present embodiment, as shown in FIG. 5, the plating solution supply tank 27 has a rill structure which is branched into a plurality of narrow grooves 27a. In this case, the plating liquid supplied to the narrow groove 27a and advanced in the narrow groove 27a enters the plating liquid supply hole 25. In this manner, the plating solution supply hole 27 is formed by the thin tube or the narrow groove from the plating solution supply groove 27 to the plating solution supply hole 25. Therefore, the plating solution can be supplied without using a force other than a pump or the like. Further, the configuration of the inside of the plating solution supply tank 27 is not limited thereto, and can be arbitrarily designed.

The plating solution discharge tank 28 is a storable tank for discharging the plating liquid and has a specific volume for accommodating the plating liquid. In the present embodiment, the plating solution discharge tank 28 is discharged from the plating solution. The hole 26 is branched into a plurality of fine grooves 28a. Thus, the plating liquid in the inside thereof is caused to have a capillary phenomenon by forming the plating liquid discharge hole 26 from the plating liquid discharge hole 26 by the thin tube or the fine groove. Therefore, the plating solution can be discharged without using a force other than a pump or the like. Further, the configuration of the inside of the plating solution discharge tank 28 is not limited thereto, and can be arbitrarily designed. For example, the plating solution discharge groove 28 may be formed of a porous body. The capillary phenomenon acts on the plating solution that has entered the porous body through the plating solution discharge hole 26. If the sponge absorbs water, the porous body also absorbs the plating solution, so that it acts as a plating solution from the plating solution discharge tank 28.

The plating solution supply tank 27, the plating solution supply hole 25, the plating liquid discharge hole 26, and the plating liquid discharge groove 28 are designed to be plated in a state in which the template 20 and the wafer 10 are opposed to each other. The liquid flows from the plating solution supply tank 27 by capillary action to the plating solution discharge tank 28. For example, the width of the narrow groove 27a of the plating solution supply tank 27, the diameter of the plating solution supply hole 25, the diameter of the plating liquid discharge hole 26, and the width of the narrow groove 28a of the plating liquid discharge groove 28 are gradually changed. Small, the plating solution is capillary. The specific size can be calculated using a known Laplace type or the like, or can be derived by simulation, experiment, or the like. In this case, a new plating solution is supplied from the plating solution supply hole 25 to the processing region 21, and the treated plating solution is discharged from the plating solution discharge hole 26. In this way, the processing region 21 is always supplied with a new plating solution, and since the plating solution is not retained, the plating treatment can be appropriately performed.

Further, in the present embodiment, the air supply groove 22, the alignment liquid discharge hole 23, the plating liquid supply hole 25, and the plating liquid discharge hole 26 can be simultaneously formed by, for example, photolithography and etching. Similarly, the alignment liquid discharge tank 24, the plating liquid supply tank 27, and the plating liquid discharge tank 28 can be simultaneously formed by, for example, photolithography processing and etching treatment.

As shown in FIG. 4, a template side electrode 29 for applying a voltage to the plating solution of the processing region 21 is provided in the processing region 21 of the template 20. The template side electrode 29 is disposed directly above the through hole 13 in a state in which the template 20 and the wafer 10 are opposed to each other.

Next, a plating process using the wafer 10 and the template 20 configured as described above will be described.

First, as shown in FIG. 6, the alignment liquid P is supplied to the entire surface 10a of the wafer 10. The alignment liquid P also enters the inside of the dicing street 12 and the through hole 13. Further, after the plating process, for example, the etching step, the front surface 10a of the wafer 10 is washed, and the alignment liquid P may be pure water used for the cleaning. That is, it is not necessary to perform the cleaning after the cleaning by another step or the supply of the alignment liquid P, and the cleaning of the wafer 10 serves as the supply of the alignment liquid P.

Then, as shown in FIG. 7, the template 20 is placed on the front surface 10a side of the wafer 10 with the alignment liquid P interposed therebetween. The template 20 is disposed such that the wafer 11 and the processing region 21 face each other. Furthermore, the wafer 11 does not need to be closely associated with the processing region 21. As shown in Fig. 7, even when the positions are slightly offset, the position adjustment of the wafer 10 and the template 20 is performed in the following steps.

The configuration of the template 20 is performed by the holding mechanism 30. The template 20 is held at a specific height by the holding mechanism 30. In addition, the configuration of the holding mechanism 30 is not particularly limited as long as it can hold the template 20.

After the template 20 is placed, as shown in FIGS. 8 and 9, the alignment liquid P enters the alignment liquid discharge hole 23 through the air supply groove 22 by capillary action. As shown in FIGS. 10 and 11, the alignment liquid P is further discharged by the capillary phenomenon to the alignment liquid discharge groove 24. At this time, as the alignment liquid P is discharged, air enters from the template side opening portion 22a and the wafer side opening portion 12a (arrow of FIG. 11), and a space 40 is formed between the air supply groove 22 and the dicing street 12. Supply air A. In this manner, a gas-liquid interface F is formed between the peripheral portion of the wafer 11 and the peripheral portion of the processing region 21.

During the formation of the gas-liquid interface F as such, the template 20 is maintained at a specific height by the holding mechanism 30. In other words, the height of the template 20 does not decrease as the alignment liquid P is discharged from the dicing street 12 to the alignment liquid discharge groove 24. Therefore, the relationship between the dicing street 12, the alignment liquid discharge hole 23, and the alignment liquid discharge groove 24 can be maintained, and the capillary phenomenon of the alignment liquid P can be maintained. Therefore, the gas-liquid interface F can be formed as appropriate.

Furthermore, during the formation of the gas-liquid interface F, the alignment between the wafer 11 and the processing region 21 The liquid P also enters the plating solution supply hole 25 and the plating solution discharge hole 26 by capillary action.

After the gas-liquid interface F is formed between the wafer 11 and the processing region 21, as shown in FIG. 12, the holding of the template 20 by the holding mechanism 30 is released. Thus, as shown in FIG. 13, the restoring force (arrow of FIG. 13) for moving the template 20 is applied to the template 20 by the surface tension of the alignment liquid P in the gas-liquid interface F. Thus, even when the position of the wafer 11 is shifted from the position of the processing region 21, the template 20 is moved in such a manner that the wafers 11 and the processing region 21 face each other, and the wafer 10 and the template 20 are accurately performed. Position adjustment.

After the position adjustment of the wafer 10 and the template 20 is performed, a plating process is performed. When this plating process is performed, as shown in FIG. 14, the DC power source 50 is connected to the wafer side electrode 14 and the template side electrode 29. The wafer side electrode 14 is connected to the negative electrode side of the DC power source 50. The template side electrode 29 is connected to the positive electrode side of the DC power source 50. Further, the DC power source 50 is used as a power source shared by a plurality of wafer side electrodes 14 of the template 20 and a plurality of template side electrodes 29.

Then, as shown in FIG. 15, the plating liquid M is supplied to the plating solution supply tank 27, and the plating liquid M flows from the plating liquid supply tank 27 to the plating liquid discharge by the capillary phenomenon as shown in FIG. Slot 28. That is, the alignment liquid P in the self-plating solution supply tank 27 to the plating liquid discharge tank 28 is replaced with the plating liquid M. Further, the plating liquid M supplied onto the wafer 11 enters the through hole 13, and the alignment liquid P in the through hole 13 is also replaced with the plating liquid M.

Thereafter, a voltage is applied to the plating solution M by the DC power source 50 using the template side electrode 29 as an anode and the wafer side electrode 14 as a cathode. In this manner, the plating solution M in the through hole 13 is electrolytically plated, and as shown in FIG. 17, the copper plating 60a is deposited in the through hole 13.

Thereafter, the plating liquid M after the plating treatment in the through hole 13 is discharged to the plating liquid discharge hole 26. In this manner, a new plating solution M is continuously supplied to the wafer 11, and the plating solution M does not remain. Therefore, the copper plating 50 can be uniformly deposited in the through hole 13.

Further, by continuously performing the plating treatment, the copper plating 60a is grown, and as shown in FIG. 18, the through electrode 60 is formed in the through hole 13.

According to the above embodiment, the alignment liquid P is supplied to the entire surface 10a of the wafer 10 Thereafter, only the alignment liquid P existing on the dicing street 12 is discharged to the alignment liquid discharge groove 24 through the alignment liquid discharge hole 23 by capillary action. At the same time, the air A is supplied to the space 40 formed between the air supply groove 22 and the dicing street 12, whereby the gas-liquid interface F is formed between the peripheral edge portion of the wafer 11 and the peripheral portion of the processing region 21. Further, by the surface tension of the alignment liquid P in the gas-liquid interface F, the restoring force of the movement of the template 20 acts, and the positional adjustment of the template 20 with respect to the wafer 10 is performed with high precision. As described above, in the present embodiment, since the alignment liquid P is supplied to the entire surface 10a of the wafer 10, the difficulty of supplying the previous alignment liquid is eliminated, and the position of the wafer 10 and the template 20 can be appropriately and easily performed. Adjustment.

Further, after the template 20 is placed on the wafer 10 until the gas-liquid interface F is formed between the wafer 11 and the processing region 21, the template 20 is held by the holding mechanism 30. Therefore, while the alignment liquid P is discharged from the dicing street 12 to the alignment liquid discharge groove 24, the capillary phenomenon generated by the alignment liquid P can be maintained, and the gas-liquid interface F can be appropriately formed.

Further, the alignment liquid P for adjusting the position of the wafer 10 and the template 20 is pure water. When the through electrode 60 is formed on the wafer 10 as in the present embodiment, the front surface 10a of the wafer 10 is washed in advance. In the washing of the front surface 10a, for example, pure water is used as the washing liquid, and by using the pure water, it is not necessary to supply the aligning liquid separately. Therefore, the position adjustment of the wafer 10 and the template 20 can be performed efficiently.

Further, since the gas-liquid interface F is formed by the dicing street 12 (the peripheral portion of the wafer 11), it is not necessary to form a groove on the wafer 10 in the region where the element is formed. Therefore, the space on the wafer 10 can be effectively utilized, and the degree of freedom in designing a semiconductor element including an electronic circuit or wiring can be improved.

Further, since the position adjustment of the wafer 10 and the template 20 is appropriately performed as described above, the plating liquid M can be appropriately supplied to the wafer 11 (in the through hole 13). Further, the alignment liquid P in the through hole 13 can be replaced with the plating liquid M, and the plating treatment can be appropriately performed.

Here, when a through electrode is formed in the through hole, air is present inside the through hole, and therefore it is necessary to dissolve the air in the plating solution. The above steps of dissolving air in the plating solution It is difficult and time consuming. On the other hand, in the present embodiment, since the alignment liquid P is replaced with the plating liquid M, the previous step of dissolving the air can be omitted, and the plating treatment can be performed efficiently.

Further, in recent years, in the semiconductor element, the pattern is refined and the height and cross direction are continuously developed, and in the step of cleaning the wafer, there is a fear of a so-called pattern collapse defect caused by the surface tension of the cleaning liquid. In the present embodiment, by replacing the alignment liquid P of pure water with the plating solution M, the cleaning from the wafer 10 to the formation of the through electrode 60 can be continuously performed in one go. Therefore, pattern collapse as described above can be suppressed.

In the above embodiment, the template side electrode 29 is provided on the surface of the template 20 opposite to the wafer 10, but the arrangement of the template side electrode 29 is not limited thereto. As shown in FIG. 19, the template side electrode 29 may be provided on the bottom surface of the narrow groove 27a of the plating solution supply tank 27. That is, it is disposed on the opposite side of the surface of the template 20 opposite to the wafer 10. As can be seen from observation of Fig. 20, the narrow groove 27a of the plating solution supply tank 27 has a large surface area for the plating liquid M. Therefore, the template side electrode 29 disposed on the bottom surface of the narrow groove 27a can perform charge exchange (plating treatment) with the plating solution M more efficiently.

Further, as shown in FIG. 21, the indirect electrode 70 may be provided below the template side electrode 29. The indirect electrode 70 is formed by covering the electrode 71 with an insulator 72. The indirect electrode 70 is switched between the connection of the template side electrode 29 and the connection of the DC power source 50 by the switch 73. In this case, first, as shown in FIG. 22, after the template side electrode 29 is electrically floating, the indirect electrode 70 is connected to the positive electrode side of the DC power source 50. Since an electric field is applied between the indirect electrode 70 and the wafer side electrode 14, positive ions and negative ions in the plating solution M are drawn to the wafer side electrode 14 and the indirect electrode 70, respectively. However, since the electrode 71 of the indirect electrode 70 is covered by the insulator 72, the pulled ions are deposited on the surfaces of the template side electrode 29 and the wafer side electrode 14 without charge exchange. Next, as shown in FIG. 23, the indirect electrode 70 is connected to the template side electrode 29 by switching the switch 73. Then, the positive charge stored in the indirect electrode 70 is moved to the template side electrode 29, and is deposited on the surface of the template side electrode 29. Negative ions carry out charge exchange. Since the wafer side electrode 14 also performs charge exchange, the positive ions are reduced, and copper plating 60a is deposited on the surface of the wafer side electrode 14. By controlling in this manner, the ions in the plating solution can be efficiently transferred to the wafer-side electrode 14, so that the plating treatment can be accelerated.

In the template 20 of the above embodiment, as shown in FIGS. 24 and 25, the alignment liquid escape hole 80 and the alignment liquid escape groove 81 may be provided. The alignment liquid escape hole 80 is a thin tube that penetrates from the front surface 20a to the back surface 20b in the thickness direction, and is opened to the front surface 20a. Further, the alignment liquid escape hole 80 is provided at one portion of each of the processing regions 21.

The alignment liquid escape groove 81 communicates with the alignment liquid escape hole 80 and is provided on the back surface 20b of the template 20. The alignment liquid escape groove 81 is a storable tank to discharge the alignment liquid P. In the present embodiment, as shown in Fig. 26, the alignment liquid escape groove 81 has a configuration in which a plurality of narrow grooves 81a are branched from the alignment liquid escape hole 80. Thus, by constituting the self-aligning liquid escape hole 80 to the alignment liquid escape groove 81 by the thin tube or the fine groove, the alignment liquid P inside thereof is caused to cause a capillary phenomenon. Further, the configuration of the inside of the liquid escaping groove 81 is not limited thereto, and can be arbitrarily designed. For example, the alignment liquid escape groove 81 may be formed of a porous body.

After the gas-liquid interface F is formed between the wafer 11 and the processing region 21 as described above, the holding of the template 20 by the holding mechanism 30 is released, and the position of the wafer 10 and the template 20 is adjusted. That is, in the subsequent plating process, the template 20 is not held by the holding mechanism 30, but it is also necessary to maintain the position of the template 20 in the plating process. However, if the holding of the template 20 by the holding mechanism 30 is released, there is a case where the pressure of the alignment liquid P (plating liquid M) between the wafer 11 and the processing region 21 is applied due to the weight of the template 20, thereby The gas-liquid interface F becomes a positive pressure. In this case, the position of the template 20 cannot be maintained.

In order to avoid the above, in the present embodiment, as shown in FIG. 27, the alignment liquid P (plating liquid M) between the wafer 11 and the processing region 21 is caused to flow from the alignment liquid escape hole 80 by capillary action. The alignment liquid escapes the groove 81. In this manner, it is possible to suppress the gas-liquid interface F from becoming a positive pressure, and to generate an appropriate holding force for the alignment liquid P (plating liquid M) between the wafer 11 and the processing region 21. borrow From this retention, the template 20 is adsorbed to the wafer 10 while maintaining the position of the template 20.

According to the present embodiment, since the alignment liquid escape hole 80 and the alignment liquid escape groove 81 are provided in the template 20, the position of the template 20 can be appropriately maintained during the plating process. Therefore, the plating treatment can be suitably performed.

In the above embodiment, pure water is used as the alignment liquid P, but other alignment liquid such as a plating solution or an etching liquid may be used.

In the above embodiment, the plating solution supply groove 27, the plating solution discharge groove 28, and the alignment liquid escape groove 81 are provided for each of the wafers 11, but these may be used for sharing the plurality of wafers 11. Slot.

In the above embodiment, the air supply groove 22 is formed in the template 20, but the air supply groove 22 may be omitted. In short, as long as a space for supplying air to the dicing street 12 is formed between the stencil 20 and the wafer 10, in this case, air enters the space, and the peripheral portion of the wafer 11 and the peripheral portion of the processing region 21 are formed. A gas-liquid interface F is formed between them.

In the above embodiment, the case where the plating treatment is performed as the specific processing of the wafer 10 has been described, but the present invention is applicable to various liquid treatments. The present invention can also be applied to other electric field treatment such as etching treatment using an etching liquid, or the present invention can also be applied to liquid processing other than electrolytic treatment such as washing treatment using a cleaning liquid. Further, the present invention can also be applied to the inspection of a semiconductor element. For example, the contact liquid can be collectively brought into contact with a fine and a plurality of through electrodes, and the through electrodes can be inspected in units of wafers. Further, the present invention can also be applied to, for example, positional adjustment of a substrate when substrates are joined to each other. In this case, the template 20 as the substrate processing jig functions as a counter substrate to be bonded to the wafer 10. Further, after the substrates are aligned with each other, the surfaces on which the substrates are to be in contact with each other may be activated by irradiation of infrared rays or the like.

Hereinabove, the preferred embodiments of the present invention have been described with reference to the accompanying drawings, but the invention is not limited thereto. It is obvious that the practitioners may think of various modifications or amendments within the scope of the ideas described in the scope of application for patents, and it should be understood that these are of course also Within the technical scope of the invention.

20‧‧‧ template

20a‧‧‧ positive

21‧‧‧Processing area

22‧‧‧Air supply ditch

22a‧‧‧Template side opening

23‧‧‧ alignment liquid discharge hole

25‧‧‧ plating solution supply hole

26‧‧‧ plating solution discharge hole

Claims (12)

A substrate processing method for treating a substrate on which a plurality of semiconductor wafers are formed, and comprising: a first step of supplying an alignment liquid to an entire surface of the substrate on which the plurality of semiconductor wafers are formed; In the second step, the opposite substrate on which the alignment liquid discharge hole penetrating in the thickness direction is formed is disposed on the substrate via the alignment liquid, and the third step is to use the capillary phenomenon to apply the alignment liquid from the above a scribe line between the semiconductor wafers is discharged toward the upper surface side of the opposite substrate via the alignment liquid discharge hole, and air is supplied to a space formed on the scribe line between the opposite substrate and the substrate, and the semiconductor wafer is The gas-liquid interface is formed between the peripheral portion and the opposite substrate; and the fourth step is to adjust the position of the counter substrate relative to the substrate by the surface tension of the alignment liquid in the gas-liquid interface. The substrate processing method according to claim 1, wherein the opposite substrate is formed with an air supply groove penetrating in a surface direction at a position corresponding to the dicing street, and the alignment liquid discharge hole is connected to the air supply groove. form. The substrate processing method of claim 1, wherein an alignment liquid discharge groove communicating with the alignment liquid discharge hole is provided on an upper surface of the opposite substrate, and in the third step, the alignment is performed by capillary action The liquid is discharged from the scribe line through the alignment liquid discharge hole to the alignment liquid discharge tank. The substrate processing method according to claim 1, wherein in the second step, the opposing substrate is placed on the substrate by the holding mechanism to maintain the opposite substrate at a specific height, and in the third step, Continue to use the above holding mechanism to maintain the opposite substrate, In the fourth step, the holding of the opposing substrate by the holding means is released, and the positional adjustment of the opposing substrate with respect to the substrate is performed. The substrate processing method according to claim 1, wherein the counter substrate has a processing liquid supply hole penetrating in a thickness direction and a processing liquid discharge hole penetrating in a thickness direction, and an upper surface of the counter substrate is provided on the counter substrate a processing liquid supply tank that communicates with the processing liquid supply hole and a processing liquid discharge tank that communicates with the processing liquid discharge hole, and after the fourth step, includes a fifth step of utilizing a capillary phenomenon to cause the treatment liquid to be self-contained The processing liquid supply tank flows into the processing liquid discharge tank through the processing liquid supply hole, the semiconductor wafer, and the processing liquid discharge hole, and replaces the alignment liquid between the semiconductor wafer and the counter substrate The treatment liquid is subjected to a specific treatment of the semiconductor wafer by the treatment liquid. The substrate processing method of claim 5, wherein the opposite substrate is formed with a liquid escape hole penetrating in a thickness direction, and the upper surface of the opposite substrate is provided with a liquid escape communicating with the liquid escape hole In the fifth step, the alignment liquid or the treatment liquid is discharged from the semiconductor wafer through the liquid escape hole to the liquid escape groove by capillary action, thereby maintaining the opposite substrate relative to the substrate Configuration. The substrate processing method of claim 1, wherein the alignment liquid is pure water. A substrate processing jig for treating a substrate on which a plurality of semiconductor wafers are formed, and forming an alignment liquid discharge hole penetrating in a thickness direction, in the substrate on which the plurality of semiconductor wafers are formed The aligning liquid is supplied to the entire surface, and the substrate processing jig is placed on the substrate via the alignment liquid. The alignment liquid discharge hole is formed in the following manner: The aligning liquid is discharged from the dicing line between the semiconductor wafers to the upper surface side of the substrate processing jig via the alignment liquid discharge hole, and a space formed on the dicing street between the substrate processing jig and the substrate is Air is supplied to form a gas-liquid interface between the peripheral portion of the semiconductor wafer and the substrate processing jig. The substrate processing jig according to claim 8, wherein an air supply groove penetrating in a surface direction is formed at a position corresponding to the dicing street, and the alignment liquid discharge hole is formed to communicate with the air supply groove. The substrate processing jig of claim 8, further comprising an alignment liquid discharge groove disposed on an upper surface of the substrate processing jig and communicating with the alignment liquid discharge hole, wherein the alignment liquid is discharged The groove system is provided in such a manner that the alignment liquid is discharged from the scribe line through the alignment liquid discharge hole to the alignment liquid discharge groove by capillary action. The substrate processing jig according to claim 8, further comprising: a processing liquid supply hole penetrating in a thickness direction; a processing liquid discharge hole penetrating in a thickness direction; and a processing liquid supply tank provided on an upper surface of the substrate processing jig; And the processing liquid supply hole; and the processing liquid discharge tank provided on the upper surface of the substrate processing jig and connected to the processing liquid discharge hole; and the processing liquid supply tank, the processing liquid supply hole, and the treatment The liquid discharge hole and the treatment liquid discharge tank are provided such that the treatment liquid for performing the specific treatment on the semiconductor wafer is circulated by capillary action. The substrate processing jig of claim 11, further comprising: a liquid escape hole penetrating in a thickness direction; and a liquid escape groove disposed on the upper surface of the substrate processing jig and communicating with the above a liquid escape hole; and the liquid escape hole and the liquid escape groove are respectively disposed in such a manner that the alignment liquid or the treatment liquid is discharged from the semiconductor wafer through the liquid escape hole to the above by a capillary phenomenon The liquid escapes the trough to maintain the configuration of the substrate processing fixture relative to the substrate.