TW201542831A - Conductive particle, conductive powder, conductive polymer composition and anisotropic conductive sheet - Google Patents

Conductive particle, conductive powder, conductive polymer composition and anisotropic conductive sheet Download PDF

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TW201542831A
TW201542831A TW104103187A TW104103187A TW201542831A TW 201542831 A TW201542831 A TW 201542831A TW 104103187 A TW104103187 A TW 104103187A TW 104103187 A TW104103187 A TW 104103187A TW 201542831 A TW201542831 A TW 201542831A
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plating layer
conductive
plating
core
thickness
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TW104103187A
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TWI575077B (en
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Setsuo Ando
Hidehito Mori
Tsutomu Nozaka
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Hitachi Metals Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys

Abstract

The invention provides a conductive particle, which is cheaper than conventional ones and has sufficiently high conductivity, and a conductive powder, a conductive polymer composition and an anisotropic conductive sheet comprising the conductive particle. The conductive particle 10 according to the embodiments of the invention comprises: a spherical core 12 comprising Ni and P, a Pd-plated layer 14 covering the surface of the core 12, and an Au-plated layer 16 covering the surface of the Pd-plated layer 14.

Description

導電性顆粒、導電性粉體、導電性高分子組成物及各向異性導電片 Conductive particles, conductive powder, conductive polymer composition, and anisotropic conductive sheet

本發明係關於具有主成分為Ni的核的導電性顆粒,並關於包含此種導電性顆粒的導電性粉體、導電性高分子組成物及各向異性導電片。 The present invention relates to a conductive particle having a core having a main component of Ni, and a conductive powder, a conductive polymer composition, and an anisotropic conductive sheet containing such conductive particles.

包含導電性顆粒的高分子組成物作為僅在厚度方向上具有導電性的各向異性導電片(ACF)、各向異性導電膠(ACP)而廣泛地用於例如電子零件之間的電氣連接。特別是各向異性導電片廣泛地用於行動電話等小型電氣裝置內的電氣連接的形成等。此外,使用橡膠(包括合成橡膠)作為高分子的各向異性導電片作為感壓型各向異性導電片亦用於佈線基板等的檢查(例如阻抗測定)中臨時電氣連接的形成(例如PCR(JSR股份有限公司的註冊商標))。 The polymer composition containing the conductive particles is widely used for electrical connection between electronic components, for example, as an anisotropic conductive sheet (ACF) or an anisotropic conductive paste (ACP) having conductivity only in the thickness direction. In particular, an anisotropic conductive sheet is widely used for forming an electrical connection in a small electric device such as a mobile phone. Further, an anisotropic conductive sheet using a rubber (including a synthetic rubber) as a polymer as a pressure-sensitive anisotropic conductive sheet is also used for formation of a temporary electrical connection in an inspection (for example, impedance measurement) of a wiring board or the like (for example, PCR ( Registered trademark of JSR Co., Ltd.)).

例如,在專利文獻1~3中揭示有使用具有強磁性的導電性顆粒的各向異性導電片。在該等各向異性導電片中,導電性顆粒在厚度方向上排列,並且在片材的面內方向分散分佈。若在厚度方向上對片材施壓,則在厚度方向上排列的導電性顆粒相互接近,形成導電通路。具有強磁性的導電性顆粒藉由磁場而在厚度方向上排列。 For example, Patent Documents 1 to 3 disclose an anisotropic conductive sheet using conductive particles having ferromagnetic properties. In the anisotropic conductive sheets, the conductive particles are arranged in the thickness direction and are dispersedly distributed in the in-plane direction of the sheet. When the sheet is pressed in the thickness direction, the conductive particles arranged in the thickness direction are close to each other to form a conductive path. The conductive particles having strong magnetic properties are aligned in the thickness direction by a magnetic field.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

專利文獻1:國際公開第02/13320號 Patent Document 1: International Publication No. 02/13320

專利文獻2:國際公開第2004/021018號 Patent Document 2: International Publication No. 2004/021018

專利文獻3:日本專利特開2012-174417號公報 Patent Document 3: Japanese Patent Laid-Open Publication No. 2012-174417

專利文獻4:日本專利特開2006-131978號公報 Patent Document 4: Japanese Patent Laid-Open No. 2006-131978

專利文獻5:日本專利特開2009-197317號公報 Patent Document 5: Japanese Patent Laid-Open Publication No. 2009-197317

然而,習知的導電性顆粒為了得到足夠高的導電性(足夠低的體積電阻率,例如0.3×10-5Ω‧m以下),形成了厚度例如為200nm(0.2μm)的Au(金)鍍層,存在成本高的問題。此外,在要求高耐濕可靠性的用途中,鍍層難以使用Au之外的其它金屬。 However, in order to obtain a sufficiently high conductivity (a sufficiently low volume resistivity, for example, 0.3 × 10 -5 Ω ‧ m or less), a conventional conductive particle forms Au (gold) having a thickness of, for example, 200 nm (0.2 μm). Plating, there is a problem of high cost. Further, in applications requiring high moisture resistance reliability, it is difficult to use a metal other than Au for the plating layer.

本發明係為了解決上述問題而完成者,並以提供較習知廉價且具有足夠高的導電性及耐濕可靠性的導電性顆粒、以及包含此種導電性顆粒的導電性粉體、導電性高分子組成物及各向異性導電片為目的。 The present invention has been made to solve the above problems, and provides conductive particles which are relatively inexpensive and have sufficiently high conductivity and moisture resistance reliability, and conductive powders containing such conductive particles, and conductivity. A polymer composition and an anisotropic conductive sheet are intended.

本發明之實施形態的導電性顆粒具有:包含Ni及P之球狀的核、覆蓋上述核之表面的Pd鍍層、及覆蓋上述Pd鍍層之表面的Au鍍層。 The conductive particles according to the embodiment of the present invention include a spherical core including Ni and P, a Pd plating layer covering the surface of the core, and an Au plating layer covering the surface of the Pd plating layer.

在有的實施形態中,上述Pd鍍層為非電解還原鍍層。 In some embodiments, the Pd plating layer is an electroless reduction coating.

在有的實施形態中,上述Au鍍層為非電解取代鍍層。 In some embodiments, the Au plating layer is an electrolessly substituted plating layer.

在有的實施形態中,上述Pd鍍層的厚度較上述Au鍍層的厚度大,並且上述Au鍍層的厚度為5nm以上且未滿40nm。上述Pd鍍層的厚度較佳為超過5nm且未滿300nm。 In some embodiments, the thickness of the Pd plating layer is larger than the thickness of the Au plating layer, and the thickness of the Au plating layer is 5 nm or more and less than 40 nm. The thickness of the above Pd plating layer is preferably more than 5 nm and less than 300 nm.

在有的實施形態中,上述核進一步包含Cu及Sn。 In some embodiments, the core further comprises Cu and Sn.

在有的實施形態中,上述核的直徑為1μm以上且100μm以下。上述核的直徑較佳為3μm以上。 In some embodiments, the diameter of the core is 1 μm or more and 100 μm or less. The diameter of the above core is preferably 3 μm or more.

利用本發明之實施形態的導電性粉體係包含上述任一項所述的導電性顆粒的粉體,其累積體積分佈曲線中的中值粒徑d50為3μm以上且100μm以下,並且[(d90-d10)/d50]≦0.8。 The conductive powder system according to the embodiment of the present invention contains the powder of the conductive particles according to any one of the above aspects, and the median diameter d50 in the cumulative volume distribution curve is 3 μm or more and 100 μm or less, and [(d90- D10) / d50] ≦ 0.8.

利用本發明之實施形態的導電性高分子組成物係包含上述導電性粉體及高分子,其中,上述高分子例如為橡膠、熱可塑性樹脂或熱硬化性樹脂。 The conductive polymer composition according to the embodiment of the present invention includes the conductive powder and the polymer, and the polymer is, for example, a rubber, a thermoplastic resin or a thermosetting resin.

利用本發明之實施形態的各向異性導電片係由上述導電性高分子組成物形成,上述導電性顆粒係在厚度方向上排列。 The anisotropic conductive sheet according to the embodiment of the present invention is formed of the above-described conductive polymer composition, and the conductive particles are arranged in the thickness direction.

藉由本發明的實施形態,可提供較習知廉價且具有足夠高的導電性及耐濕可靠性的導電性顆粒、以及包含此種導電性顆粒的導電性粉體、導電性高分子組成物及各向異性導電片。 According to the embodiment of the present invention, it is possible to provide conductive particles which are inexpensive and have sufficiently high conductivity and moisture resistance, and conductive powders and conductive polymer compositions containing such conductive particles and Anisotropic conductive sheet.

10‧‧‧導電性顆粒 10‧‧‧Electrical particles

12‧‧‧核(NiP核) 12‧‧‧nuclear (NiP nuclear)

14‧‧‧Pd鍍層 14‧‧‧Pd plating

16‧‧‧Au鍍層 16‧‧‧Au plating

圖1係利用本發明之實施形態的導電性顆粒的截面示意圖。 Fig. 1 is a schematic cross-sectional view showing conductive particles using an embodiment of the present invention.

圖2係表示實施例之導電性顆粒的截面SEM圖像的圖。 Fig. 2 is a view showing a cross-sectional SEM image of the electroconductive particles of the examples.

圖3係表示實施例之導電性顆粒(Pd鍍層+Au鍍層)及參考例(無Au鍍層)之導電性顆粒的體積電阻率對Pd鍍層厚度的依賴性的圖 表。 Fig. 3 is a graph showing the dependence of the volume resistivity of the conductive particles (Pd plating layer + Au plating layer) of the example and the conductive particles of the reference example (without Au plating layer) on the thickness of the Pd plating layer. table.

圖4係表示比較例(無Pd鍍層)之導電性顆粒的體積電阻率對Au鍍層厚度的依賴性的圖表。 Fig. 4 is a graph showing the dependence of the volume resistivity of the conductive particles of the comparative example (without Pd plating) on the thickness of the Au plating layer.

圖5係表示導電性顆粒之體積電阻率的測定中所用之裝置的結構示意圖。 Fig. 5 is a view showing the structure of a device used for the measurement of the volume resistivity of the conductive particles.

以下,參照附圖對利用本發明之實施形態的導電性顆粒、導電性粉體、導電性高分子組成物及各向異性導電片進行說明。 Hereinafter, the conductive particles, the conductive powder, the conductive polymer composition, and the anisotropic conductive sheet according to the embodiment of the present invention will be described with reference to the drawings.

圖1係利用本發明之實施形態的導電性顆粒10的截面示意圖。導電性顆粒10係具有球狀的核12、覆蓋核12之表面的Pd(鈀)鍍層14、覆蓋Pd鍍層14之表面的Au鍍層16。核12係含有Ni(鎳)及P(磷)。核12的直徑係例如在1μm以上且100μm以下。若核12的直徑未滿1μm,由於核12的凝集變得嚴重,因此難以作為粉體處理。若核12的直徑超過100μm,則從導電通路中溢出,例如引起鄰接佈線之間的短路的可能性變高。核12的直徑較佳為3μm以上,且較佳為30μm以下。若核12的直徑在3μm以上,由於在進行鍍Pd時核12的凝集得到緩和,因此較實用。若核12的直徑在30μm以下,則從導電通路的溢出減少或消失。作為導電性顆粒10之集合體的導電性粉體,較佳係累積體積分佈曲線的中值粒徑d50在3μm以上且100μm以下,並且[(d90-d10)/d50]≦0.8的粉體。中值粒徑d50可作為導電性粉體之平均粒徑的指標。此外,若[(d90-d10)/d50]超過0.8,則粒徑的偏差過大,在導電通路上存在不與佈線或電極接觸的小粒徑之導電性顆粒,因此有連接可靠性降低之虞。d10及d90係分別表示累積體積分率為10%及90%的粒徑。此外,如無特別說明,本說明 書中的粒徑分佈係表示利用雷射繞射散射法而求得者。 Fig. 1 is a schematic cross-sectional view showing a conductive particle 10 according to an embodiment of the present invention. The conductive particles 10 have a spherical core 12, a Pd (palladium) plating layer 14 covering the surface of the core 12, and an Au plating layer 16 covering the surface of the Pd plating layer 14. The core 12 system contains Ni (nickel) and P (phosphorus). The diameter of the core 12 is, for example, 1 μm or more and 100 μm or less. If the diameter of the core 12 is less than 1 μm, since the aggregation of the core 12 becomes severe, it is difficult to treat it as a powder. If the diameter of the core 12 exceeds 100 μm, it overflows from the conductive path, and for example, the possibility of causing a short circuit between adjacent wirings becomes high. The diameter of the core 12 is preferably 3 μm or more, and preferably 30 μm or less. If the diameter of the core 12 is 3 μm or more, the aggregation of the core 12 is moderated when Pd plating is performed, which is practical. If the diameter of the core 12 is 30 μm or less, the overflow from the conductive path is reduced or eliminated. The conductive powder which is an aggregate of the conductive particles 10 is preferably a powder having a cumulative volume distribution curve having a median diameter d50 of 3 μm or more and 100 μm or less and [(d90-d10)/d50]≦0.8. The median diameter d50 can be used as an index of the average particle diameter of the conductive powder. In addition, when [(d90-d10)/d50] exceeds 0.8, the variation in particle diameter is too large, and there are conductive particles having a small particle diameter which are not in contact with the wiring or the electrode in the conductive path, and thus the connection reliability is lowered. . D10 and d90 represent particle sizes of cumulative volume fractions of 10% and 90%, respectively. In addition, unless otherwise stated, this note The particle size distribution in the book is obtained by the laser diffraction scattering method.

作為導電性顆粒10的核12,例如可適宜地使用專利文獻4或5中記載的導電性顆粒。利用專利文獻5記載的製造方法製造的NiP導電性粉體由於為單分散且粒度分佈窄,因此具有可易於製造滿足[(d90-d10)/d50]≦0.8之關係的導電性粉體的優點。 As the core 12 of the conductive particles 10, for example, the conductive particles described in Patent Document 4 or 5 can be suitably used. Since the NiP conductive powder produced by the production method described in Patent Document 5 is monodispersed and has a narrow particle size distribution, it has an advantage that it can easily produce a conductive powder satisfying the relationship of [(d90-d10)/d50]≦0.8. .

核12係以Ni作為主成分,並且有包含P(磷)、Cu(銅)及/或Sn(錫)的情況。P、Cu及Sn都是在核12的造球過程中以抑制核的成長或凝集為目的,而可添加作為反應處理液中的原料組分。出於降低核12自身之電阻率的原因,該等元素在核12中的含量越少越好。具體而言,相對於整體,核12較佳係包含1~15質量%的P,更佳係10質量%以下。若P的含量超過15質量%,則核12的體積電阻率顯著上升,並不實用。又,相對於整體,核12較佳係包含0.01質量%~18質量%的Cu。若Cu的含量超過18質量%,則存在核12與Pd鍍層14之密合性降低的可能性。又,相對於整體,核12較佳係包含0.05質量%~10質量%的Sn。若Sn的含量超過10質量%,則存在核12與Pd鍍層14之密合性降低的可能性。又,除了Ni、P及Cu之外,核12較佳係包含Sn。在製造核12所使用的粉體時由於Cu及Sn係以核生成反應之催化劑毒物的形式作用,因此利用單分散可易於製造粒度分佈窄的粉體。此外,Cu及Sn係在NiP導電性顆粒的成長過程中進行共析。 The core 12 has Ni as a main component and contains P (phosphorus), Cu (copper), and/or Sn (tin). P, Cu, and Sn are both intended to inhibit the growth or aggregation of the core during the nucleation of the core 12, and may be added as a raw material component in the reaction treatment liquid. In order to reduce the resistivity of the core 12 itself, the content of such elements in the core 12 is as small as possible. Specifically, the core 12 preferably contains 1 to 15% by mass of P, and more preferably 10% by mass or less, relative to the whole. When the content of P exceeds 15% by mass, the volume resistivity of the core 12 remarkably rises, which is not practical. Further, the core 12 preferably contains 0.01% by mass to 18% by mass of Cu with respect to the whole. When the content of Cu exceeds 18% by mass, the adhesion between the core 12 and the Pd plating layer 14 may be lowered. Further, the core 12 preferably contains 0.05% by mass to 10% by mass of Sn relative to the whole. When the content of Sn exceeds 10% by mass, the adhesion between the core 12 and the Pd plating layer 14 may be lowered. Further, in addition to Ni, P, and Cu, the core 12 preferably contains Sn. In the case of producing the powder used in the core 12, since Cu and Sn act in the form of a catalyst poison of the nucleation reaction, it is easy to produce a powder having a narrow particle size distribution by monodispersion. Further, Cu and Sn are subjected to eutectoid growth during the growth of the NiP conductive particles.

Pd鍍層14較佳為非電解還原鍍層。非電解還原鍍層具有不比非電解取代鍍層遜色的密合性,並且針孔的發生較非電解取代鍍層少。Au鍍層16較佳為非電解取代鍍層。非電解取代Au鍍層與Pd鍍層14的密合性較非電解還原Au鍍層優異。由於非電解取代鍍 Au反應中伴隨著Pd鍍層14的溶解,因此較佳係Pd鍍層14的厚度大於Au鍍層16的厚度,並且Au鍍層16的厚度未滿40nm。若Au鍍層的厚度超過40nm,則特性上並無特別的變化而在成本上造成浪費。Pd鍍層14的厚度較佳為超過5nm且未滿300nm。若Pd鍍層在5nm以下,則在Pd鍍層上施行非電解取代鍍Au時,有Pd鍍層全部溶解之虞。若Pd鍍層全部溶解,則存在Au鍍層的密合性降低、或者Au不析出的可能性。又,若Pd鍍層的厚度超過300nm,則特性上並無特別的變化而在成本上造成浪費。鑒於以上所述,在進一步地提高可靠性的情況下,較佳係Pd鍍層的厚度超過50nm且未滿200nm。 The Pd plating layer 14 is preferably an electroless reduction coating. The electroless reduction coating has no adhesion which is inferior to the electroless substitution coating, and pinholes occur less than the electroless substitution coating. The Au plating layer 16 is preferably an electroless replacement plating layer. The adhesion of the electroless-substituted Au plating layer to the Pd plating layer 14 is superior to that of the non-electrolytic reduction Au plating layer. Electroless substitution plating The Au reaction is accompanied by dissolution of the Pd plating layer 14, so that the thickness of the Pd plating layer 14 is preferably larger than the thickness of the Au plating layer 16, and the thickness of the Au plating layer 16 is less than 40 nm. If the thickness of the Au plating layer exceeds 40 nm, there is no particular change in characteristics and waste in cost. The thickness of the Pd plating layer 14 is preferably more than 5 nm and less than 300 nm. When the Pd plating layer is 5 nm or less, when the electroless substitution Au plating is performed on the Pd plating layer, the Pd plating layer is completely dissolved. When all of the Pd plating layer is dissolved, there is a possibility that the adhesion of the Au plating layer is lowered or Au is not precipitated. Further, when the thickness of the Pd plating layer exceeds 300 nm, there is no particular change in characteristics and waste in cost. In view of the above, in the case where the reliability is further improved, it is preferable that the thickness of the Pd plating layer exceeds 50 nm and is less than 200 nm.

利用本發明之實施形態的導電性顆粒10係具有覆蓋核12表面的Pd鍍層14及覆蓋Pd鍍層14表面的Au鍍層16,因此,較習知更廉價並且具有足夠高的導電性及耐濕可靠性。以下說明其理由,但以下的說明並不限定利用本發明的實施形態。 The conductive particles 10 according to the embodiment of the present invention have a Pd plating layer 14 covering the surface of the core 12 and an Au plating layer 16 covering the surface of the Pd plating layer 14, and thus are more inexpensive and have sufficiently high conductivity and moisture resistance. Sex. The reason for this will be described below, but the following description does not limit the use of the embodiment of the present invention.

作為在以Ni為主成分的顆粒(簡稱為Ni顆粒)上形成Au鍍層的方法,有非電解還原型鍍Au及非電解取代型鍍Au。一般而言,顆粒(粉體)的鍍敷不使用電鍍(由於顆粒凝集),因此以下省略「非電解」而僅稱為「還原型」或「取代型」。 As a method of forming an Au plating layer on particles containing Ni as a main component (abbreviated as Ni particles), there are electroless reduction type Au plating and electroless substitution type Au plating. In general, plating of particles (powder) does not use electroplating (due to aggregation of particles), so "non-electrolytic" is omitted below and is simply referred to as "reduced type" or "substituted type".

若對Ni顆粒進行取代鍍Au,則Ni溶出至鍍液中,隨著Ni的離子化而釋放的電子被鍍液中的Au離子接收,在Ni顆粒表面析出Au。由於Ni溶出的位置與Au析出的位置不一定一致,因此在取代Au鍍層上形成較多的針孔。若進行耐濕實驗(例如加壓蒸煮實驗),則從針孔侵入的水分使Ni氧化,生成氫氧化物。一部分氫氧化物存在於Au鍍層上,結果產生導電性降低的問題。此外,取代Au鍍層雖然與Ni顆粒的密合性較下述的還原鍍層高,但無法增大鍍 層厚度。例如難以利用取代鍍敷形成厚度超過100nm、尤其是200nm以上的Au鍍層。 When the Ni particles are subjected to substitutional Au plating, Ni is eluted into the plating solution, and electrons released by ionization of Ni are received by Au ions in the plating solution, and Au is precipitated on the surface of the Ni particles. Since the position where Ni is eluted does not necessarily coincide with the position where Au precipitates, a large number of pinholes are formed on the substituted Au plating layer. When a moisture resistance test (for example, a pressure cook test) is performed, moisture invaded from the pinhole oxidizes Ni to form a hydroxide. A part of the hydroxide is present on the Au plating layer, and as a result, there is a problem that the conductivity is lowered. In addition, the substitution of the Au plating layer with the Ni particles is higher than that of the following reduction plating layer, but the plating cannot be increased. Layer thickness. For example, it is difficult to form an Au plating layer having a thickness exceeding 100 nm, particularly 200 nm or more, by substitution plating.

另一方面,還原鍍Au係由於鍍液中的Au離子藉由從還原劑接收電子而作為Au析出,因此沒有Ni的溶出。因此,還原Au鍍層的針孔較取代Au鍍層少,並且可形成厚度200nm以上的Au鍍層。但,還原Au鍍層與Ni顆粒的密合性低,若進行耐濕實驗(例如加壓蒸煮實驗),則存在還原Au鍍層剝離的問題。 On the other hand, in the Au plating system, since Au ions in the plating solution are precipitated as Au by receiving electrons from the reducing agent, there is no elution of Ni. Therefore, the pinhole for reducing the Au plating layer is less than that of the Au plating layer, and an Au plating layer having a thickness of 200 nm or more can be formed. However, the adhesion between the reduced Au plating layer and the Ni particles is low, and when a moisture resistance test (for example, a pressure cooking test) is performed, there is a problem that the reduced Au plating layer is peeled off.

又,在Ni顆粒表面首先形成取代Au鍍層,再以覆蓋取代鍍層的方式併用還原Au鍍層,雖可解決上述問題,但為了獲得足夠的導電性,必須使Au鍍層的整體厚度在約200nm以上,因此成本較高。 Further, the Au plating layer is first formed on the surface of the Ni particles, and the Au plating layer is used in combination with the substitution plating layer. Although the above problem can be solved, in order to obtain sufficient conductivity, the entire thickness of the Au plating layer must be about 200 nm or more. Therefore, the cost is higher.

相對於此,利用本發明之實施形態的導電性顆粒10係具有包含Ni及P的核(以下有時記載為「NiP核」)12、Pd鍍層14及覆蓋Pd鍍層14的Au鍍層16。由於Pd較Au廉價,因此導電性顆粒10至少因為具有Pd鍍層而較僅具有Au鍍層的導電性顆粒廉價。 On the other hand, the conductive particles 10 according to the embodiment of the present invention have a core including Ni and P (hereinafter referred to as "NiP core") 12, a Pd plating layer 14, and an Au plating layer 16 covering the Pd plating layer 14. Since Pd is cheaper than Au, the conductive particles 10 are inexpensive at least because of the Pd plating layer and the conductive particles having only the Au plating layer.

又,Pd鍍層14與NiP核12及Au鍍層16兩者都具有良好的密合性,不會發生剝離的問題。而且,雖不及Au,但Pd仍具有較高的導電性,例如厚度為約100nm的Pd鍍層的體積電阻率在0.3×10-5Ω‧m以下,足夠低。並且,若與Au相比,Pd的離子化傾向較大(氧化還原電位較低),雖易於氧化,但由於Pd鍍層14被Au鍍層16覆蓋,因此導電性顆粒10具有高耐濕可靠性。 Further, the Pd plating layer 14 has good adhesion to both the NiP core 12 and the Au plating layer 16, and does not cause peeling. Further, although not as good as Au, Pd still has high conductivity. For example, a Pd plating layer having a thickness of about 100 nm has a volume resistivity of 0.3 × 10 -5 Ω ‧ m or less, which is sufficiently low. Further, Pd has a higher ionization tendency (lower oxidation-reduction potential) than Au, and is easily oxidized. However, since the Pd plating layer 14 is covered with the Au plating layer 16, the conductive particles 10 have high moisture resistance reliability.

Pd鍍層14較佳為還原鍍層。相較於利用取代鍍敷形成的膜,利用還原鍍敷形成的膜的針孔較少且緻密,亦不易發生粒界腐蝕。又,相較於取代鍍敷,還原鍍敷易於形成厚鍍層。由於Pd的 氧化還原電位介於Ni的氧化還原電位及Au的氧化還原電位之間,因此Pd與Ni的取代反應不如Au與Ni的取代反應激烈。其結果,可認為Pd還原鍍層14與NiP核12的密合性高於Au還原鍍層與NiP核12的密合性。若在NiP核12上直接形成Au還原鍍層,可認為在Au還原鍍敷時作為副反應而發生之Au與Ni的激烈取代反應係使Au還原鍍層與NiP核12之密合性降低的原因。 The Pd plating layer 14 is preferably a reduced plating layer. Compared with the film formed by the substitution plating, the film formed by the reduction plating has less pinholes and is dense, and grain boundary corrosion is less likely to occur. Moreover, the reduction plating is easier to form a thick plating layer than the substitution plating. Due to Pd The redox potential is between the redox potential of Ni and the redox potential of Au, so the substitution reaction of Pd and Ni is not as intense as the substitution reaction of Au and Ni. As a result, it is considered that the adhesion between the Pd reduction plating layer 14 and the NiP core 12 is higher than the adhesion between the Au reduction plating layer and the NiP core 12. When the Au reduction plating layer is directly formed on the NiP core 12, it is considered that the intense substitution reaction of Au and Ni which occurs as a side reaction during Au reduction plating causes the adhesion between the Au reduction plating layer and the NiP core 12 to decrease.

Au鍍層16較佳為取代鍍層。Au與Pd的氧化還原電位之差較小,不易發生Au與Pd的取代反應。利用經由Pd鍍層14的粒界及/或針孔與NiP核12中所含之Ni的取代反應,可在Pd鍍層14上形成Au鍍層16。藉由調節Pd鍍層14的厚度,可控制利用取代鍍敷所形成之Au鍍層16的厚度。其理由係,若利用取代鍍敷,粒界及/或針孔被Au鍍層16覆蓋,則Au鍍層16停止形成。較佳係Pd鍍層14的厚度大於Au鍍層16的厚度,並且Au鍍層16的厚度未滿40nm。若Au鍍層16的厚度超過40nm,則特性上並無特別的變化而在成本上造成浪費。例如,若Pd鍍層14的厚度超過例如100nm,則可形成厚度未滿30nm的Au鍍層16。 The Au plating layer 16 is preferably a replacement plating layer. The difference between the oxidation-reduction potential of Au and Pd is small, and the substitution reaction between Au and Pd is less likely to occur. The Au plating layer 16 can be formed on the Pd plating layer 14 by the substitution reaction of the grain boundary and/or pinholes passing through the Pd plating layer 14 and Ni contained in the NiP core 12. By adjusting the thickness of the Pd plating layer 14, the thickness of the Au plating layer 16 formed by the substitution plating can be controlled. The reason is that if the grain boundary and/or the pinhole are covered with the Au plating layer by the substitution plating, the Au plating layer 16 is stopped. Preferably, the thickness of the Pd plating layer 14 is greater than the thickness of the Au plating layer 16, and the thickness of the Au plating layer 16 is less than 40 nm. If the thickness of the Au plating layer 16 exceeds 40 nm, there is no particular change in characteristics and waste in cost. For example, if the thickness of the Pd plating layer 14 exceeds, for example, 100 nm, the Au plating layer 16 having a thickness of less than 30 nm can be formed.

此外,Au鍍層16亦可作為還原鍍層。由於還原鍍敷時的副反應Au與Pd的取代反應不易發生,因此Au鍍層與Pd鍍層14的密合性足夠高。但,為了控制Au鍍層16的厚度,尤其是為了以良好的再現性形成未滿40nm的薄Au鍍層16,較佳為取代鍍敷。 Further, the Au plating layer 16 can also function as a reduction plating layer. Since the substitution reaction of the side reaction Au and Pd at the time of reduction plating does not easily occur, the adhesion between the Au plating layer and the Pd plating layer 14 is sufficiently high. However, in order to control the thickness of the Au plating layer 16, in particular, in order to form the thin Au plating layer 16 of less than 40 nm with good reproducibility, it is preferable to replace the plating.

利用本發明之實施形態的導電性顆粒10係例如可利用以下方法製造獲得。 The conductive particles 10 according to the embodiment of the present invention can be obtained, for example, by the following method.

首先,準備作為NiP核12之包含NiP顆粒的NiP粉體。NiP粉體較佳係利用專利文獻5記載的方法而製造者。具體而言,將 硫酸鎳六水合物及硫酸銅五水合物以Ni與Cu的莫耳比為Ni/Cu=239的方式製備,並溶解在純水中,製作金屬鹽水溶液15(dm3)。接著,將醋酸鈉溶解在純水中,使其為1.0(kmol/m3)的濃度,再加入氫氧化鈉,製作了pH調製水溶液15(dm3)。然後,將上述金屬鹽水溶液與pH調製水溶液攪拌混合,形成30(dm3)的混合水溶液,測定pH顯示為8.1的值。然後,對上述的混合水溶液一邊利用N2氣體起泡一邊藉由外部加熱器加熱維持在343(K),並持續攪拌。接著,製作在純水中以1.8(kmol/m3)的濃度溶解膦酸鈉得到的還原劑水溶液15(dm3),將其亦利用外部加熱器加熱到343(K)。然後,將上述30(dm3)的混合水溶液與15(dm3)的還原劑水溶液以溫度成為343±1(K)的方式調製後混合,利用非電解還原法獲得NiP粉體。 First, a NiP powder containing NiP particles as the NiP core 12 is prepared. The NiP powder is preferably produced by the method described in Patent Document 5. Specifically, nickel sulfate hexahydrate and copper sulfate pentahydrate are prepared in such a manner that the molar ratio of Ni to Cu is Ni/Cu=239, and dissolved in pure water to prepare a metal salt aqueous solution 15 (dm 3 ). . Next, sodium acetate was dissolved in pure water to a concentration of 1.0 (kmol/m 3 ), and sodium hydroxide was further added to prepare a pH-adjusted aqueous solution 15 (dm 3 ). Then, the aqueous metal salt solution and the pH-prepared aqueous solution were stirred and mixed to form a mixed aqueous solution of 30 (dm 3 ), and the pH was measured to be 8.1. Then, the above mixed aqueous solution was maintained at 343 (K) by heating with an external heater while bubbling with N 2 gas, and stirring was continued. Next, an aqueous reducing agent solution 15 (dm 3 ) obtained by dissolving sodium phosphonate in a concentration of 1.8 (kmol/m 3 ) in pure water was prepared, and this was also heated to 343 (K) by an external heater. Then, the 30 (dm 3 ) mixed aqueous solution and the 15 (dm 3 ) reducing agent aqueous solution were prepared and mixed at a temperature of 343 ± 1 (K), and a NiP powder was obtained by an electroless reduction method.

(鍍Pd) (plated Pd)

準備鍍Pd建浴液(例如小島化學藥品製造的Pallet LMII,Pd的濃度為10g/L(升))300mL。 A plated Pd bath (for example, Pallet LMII manufactured by Kojima Chemical Co., Ltd., having a Pd concentration of 10 g/L (liter)) of 300 mL was prepared.

準備以甲酸鈉為主成分的還原液(例如小島化學藥品製造的Pallet II)550mL。 A reducing solution containing sodium formate as a main component (for example, Pallet II manufactured by Kojima Chemical Co., Ltd.) was prepared in an amount of 550 mL.

將鍍Pd建浴液與還原液混合後,利用純水稀釋,獲得Pd鍍液3L(pH為5.5)。一邊藉由外部加熱器將Pd鍍液加熱保持在328K,一邊進行攪拌。 The Pd plating bath was mixed with the reducing solution, and then diluted with pure water to obtain 3 L of Pd plating solution (pH 5.5). The Pd plating solution was stirred while being heated at 328 K by an external heater.

準備將上述還原液50mL利用純水稀釋後的還原水溶液300mL(pH為5.5)。在還原水溶液中混合NiP粉體(質量50g),並在室溫下攪拌10分鐘。 Prepared 300 mL of the reducing solution diluted with pure water (pH 5.5). NiP powder (mass 50 g) was mixed in a reducing aqueous solution, and stirred at room temperature for 10 minutes.

其後,將分散有NiP粉體的還原水溶液混合於上述鍍 液中,利用還原鍍敷形成Pd鍍層14。 Thereafter, the reduced aqueous solution in which the NiP powder is dispersed is mixed in the above plating In the liquid, the Pd plating layer 14 is formed by reduction plating.

依此,獲得了被Pd鍍層14覆蓋的NiP核12。若在上述的條件下進行Pd還原鍍敷,則可獲得厚度約115nm的Pd鍍層14。 Accordingly, the NiP core 12 covered by the Pd plating layer 14 is obtained. When Pd reduction plating is performed under the above conditions, a Pd plating layer 14 having a thickness of about 115 nm can be obtained.

此外,藉由在上述鍍Pd步驟中將鍍Pd建浴液:還原液的混合比調整為300mL:550mL,可控制Pd鍍層的厚度。例如,若使鍍Pd建浴液:還原液的混合比為420mL:790mL,對35g的NiP核12進行鍍敷,則可獲得厚度約240nm的Pd鍍層。 Further, by adjusting the mixing ratio of the Pd plating bath: reducing solution in the Pd plating step to 300 mL: 550 mL, the thickness of the Pd plating layer can be controlled. For example, when the mixing ratio of the Pd plating bath: reducing solution is 420 mL: 790 mL, and 35 g of the NiP core 12 is plated, a Pd plating layer having a thickness of about 240 nm can be obtained.

(鍍Au) (plated Au)

在鍍Au建浴液(例如小島化學藥品製造的Dip G-FP)200mL中混合十二烷基硫酸鈉0.1g及金氰化鉀0.9g,利用純水稀釋,準備Au鍍液(pH為4.0)2L。一邊藉由外部加熱器將Au鍍液加熱保持在334K,一邊進行攪拌。 0.1 g of sodium lauryl sulfate and 0.9 g of potassium gold cyanide were mixed in 200 mL of Au plating bath (for example, Dip G-FP manufactured by Kojima Chemical Co., Ltd.), and diluted with pure water to prepare an Au plating solution (pH 4.0). ) 2L. The Au plating solution was heated while maintaining the temperature at 334 K by an external heater.

接著,在以20g/L的濃度溶解有檸檬酸單水合物的水溶液100mL中混合被Pd鍍層14覆蓋的NiP核12的粉體(質量35g),並在室溫下攪拌5分鐘。 Next, the powder (mass 35 g) of the NiP core 12 covered with the Pd plating layer 14 was mixed in 100 mL of an aqueous solution in which citric acid monohydrate was dissolved at a concentration of 20 g/L, and stirred at room temperature for 5 minutes.

其後,在鍍Au液中混合溶解有檸檬酸單水合物的上述水溶液及NiP粉體,利用取代鍍敷形成Au鍍層16。若在上述條件下進行Au取代鍍敷,則可獲得厚度約20nm的Au鍍層16。 Thereafter, the aqueous solution in which the citric acid monohydrate was dissolved and the NiP powder were mixed in the Au plating solution, and the Au plating layer 16 was formed by substitution plating. When Au-plated plating is performed under the above conditions, an Au plating layer 16 having a thickness of about 20 nm can be obtained.

依此,獲得NiP核12被Pd鍍層14及Au鍍層16覆蓋的導電性顆粒10。圖2表示依此所獲得之實施例的導電性顆粒10的截面SEM圖像。可確認NiP核12被Pd鍍層14覆蓋的狀態。又,由於Au鍍層16的厚度為20nm,較薄,因此在SEM圖像中難以確認其存在。 Accordingly, the conductive particles 10 in which the NiP core 12 is covered by the Pd plating layer 14 and the Au plating layer 16 are obtained. Fig. 2 shows a cross-sectional SEM image of the electroconductive particle 10 of the embodiment thus obtained. A state in which the NiP core 12 is covered by the Pd plating layer 14 can be confirmed. Further, since the Au plating layer 16 has a thickness of 20 nm and is thin, it is difficult to confirm its existence in the SEM image.

此外,導電性顆粒10所具有的Pd鍍層14及Au鍍層16 的厚度可根據導電性顆粒10的組成、NiP核12的密度、NiP核12的粒徑(中值粒徑)、Pd及Au的密度,藉由例如利用以下的式子計算求出。導電性顆粒10的組成分析,係可將一定量的導電性顆粒10溶解在王水中,利用純水稀釋後,使用ICP發光分析裝置而進行。 Further, the Pd plating layer 14 and the Au plating layer 16 which the conductive particles 10 have The thickness can be determined by, for example, the following formula, based on the composition of the conductive particles 10, the density of the NiP core 12, the particle diameter (median diameter) of the NiP core 12, and the density of Pd and Au. The composition analysis of the conductive particles 10 can be carried out by dissolving a predetermined amount of the conductive particles 10 in aqua regia, diluting with pure water, and then using an ICP emission spectrometer.

鍍層厚度(μm)=(鍍層的質量%/100)×(1/構成鍍層之元素的密度(g/cm3))×(1/NiP核的總表面積(cm2))×10,000 Coating thickness (μm) = (mass % of plating layer / 100) × (1/ density of elements constituting the plating layer (g / cm 3 )) × (total surface area of 1 / NiP core (cm 2 )) × 10,000

其中,Au的密度為19.32g/cm3,Pd的密度為11.99g/cm3,NiP顆粒的密度為7.8g/cm3,NiP核的總表面積為一個核的表面積(例如中值粒徑d50的球體表面積)與試料中所含之NiP核的總數的乘積。 Wherein, Au has a density of 19.32g / cm 3, Pd a density of 11.99g / cm 3, the density of NiP particles is 7.8g / cm 3, the total surface area of the core is a core NiP surface area (e.g., a median particle diameter d50 The product of the sphere surface area) and the total number of NiP cores contained in the sample.

以下表示實驗例,並對利用本發明之實施形態的導電性顆粒10的特徵進一步詳細地進行說明。此處所示的實驗例為實施例1~4(Pd鍍層+Au鍍層)、參考例1~4(無Au鍍層)及比較例1~4(無Pd鍍層)。實施例1~4分別在參考例1~4的Pd鍍層上形成Au鍍層,比較例1~4直接在NiP核12上形成Au取代鍍層。 The experimental examples are shown below, and the characteristics of the conductive particles 10 according to the embodiment of the present invention will be described in further detail. The experimental examples shown here are Examples 1 to 4 (Pd plating + Au plating), Reference Examples 1 to 4 (without Au plating), and Comparative Examples 1 to 4 (without Pd plating). In Examples 1 to 4, Au plating layers were formed on the Pd plating layers of Reference Examples 1 to 4, respectively, and Comparative Examples 1 to 4 directly formed Au replacement plating layers on the NiP cores 12.

在所有的實驗例中,用於NiP核12之NiP粉體的中值粒徑d50為20.0μm,並使用[(d90-d10)/d50]為0.7的粉體。NiP粉體具有以下組成:相對於整體含有6.3質量%的P、3.3質量%的Cu、0.2質量%的Sn、剩餘為Ni。 In all the experimental examples, the NiP powder for the NiP core 12 had a median diameter d50 of 20.0 μm, and a powder of [(d90-d10)/d50] of 0.7 was used. The NiP powder has a composition containing 6.3% by mass of P, 3.3% by mass of Cu, 0.2% by mass of Sn, and the balance Ni as a whole.

如上所述,實施例及參考例中的Pd鍍層的厚度係藉由調整鍍Pd建浴液與還原液的混合比而改變。如上所述,實施例中的Au鍍層的厚度係因厚度超過100nm的Pd鍍層的存在而受限制,在任一實施例中Au鍍層的厚度均為約20nm。此外,比較例中的Au鍍層的厚度係藉由調整鍍敷時間及/或鍍液的氰化金鉀濃度而改變。 As described above, the thickness of the Pd plating layer in the examples and the reference examples was changed by adjusting the mixing ratio of the plating Pd bath and the reducing liquid. As described above, the thickness of the Au plating layer in the examples is limited by the presence of a Pd plating layer having a thickness exceeding 100 nm, and in any of the examples, the thickness of the Au plating layer is about 20 nm. Further, the thickness of the Au plating layer in the comparative example was changed by adjusting the plating time and/or the gold potassium cyanide concentration of the plating solution.

將實施例、參考例及比較例之導電性粉體的各鍍層的厚度及體積電阻率示於表1~表3及圖3~圖4。圖3係表示實施例之導電性顆粒(Pd鍍層+Au鍍層)及參考例(無Au鍍層)之導電性顆粒的體積電阻率對Pd鍍層厚度的依賴性的圖表,圖4係表示比較例(無Pd鍍層)之導電性顆粒的體積電阻率對Au鍍層厚度的依賴性的圖表。 The thicknesses and volume resistivities of the respective plating layers of the conductive powders of the examples, the reference examples, and the comparative examples are shown in Tables 1 to 3 and FIGS. 3 to 4. 3 is a graph showing the dependence of the volume resistivity of the conductive particles (Pd plating layer + Au plating layer) of the example and the conductive particles of the reference example (without Au plating layer) on the thickness of the Pd plating layer, and FIG. 4 shows a comparative example ( A graph of the dependence of the volume resistivity of the conductive particles without Pd plating on the Au plating thickness.

如上所述,鍍層的厚度係根據導電性粉體的組成分析藉由計算求出。又,各導電性粉體的體積電阻率係使用圖5所示的裝置測定。將粉體試料1.15g放入內徑11mm的量筒內,在利用Cu製的治具(活塞)施加22MPa的載重的狀態下利用電阻計(日置電機製的電阻計3541)測得整體的電阻值,根據該電阻值利用下式求得體積電阻率。 As described above, the thickness of the plating layer is determined by calculation based on the composition analysis of the conductive powder. Moreover, the volume resistivity of each conductive powder was measured using the apparatus shown in FIG. 1.15 g of the powder sample was placed in a cylinder having an inner diameter of 11 mm, and the overall resistance value was measured by a resistance meter (resistance meter 3541 of the day-mounted electric mechanism) while a load of 22 MPa was applied by a jig (piston) made of Cu. Based on the resistance value, the volume resistivity was obtained by the following formula.

體積電阻率=(整體的電阻值-治具的電阻值)×π×(11/2)2×100/厚度 Volume resistivity = (integral resistance value - resistance value of fixture) × π × (11/2) 2 × 100 / thickness

此外,上式的厚度係以cm單位表示施加上述載重時粉體在量筒內的厚度(與加壓方向平行)。 Further, the thickness of the above formula is expressed in cm units in terms of the thickness (parallel to the pressing direction) of the powder in the measuring cylinder when the above-described load is applied.

[表2] [Table 2]

從圖3及表1、2可知,具有約115nm以上厚度的Pd鍍層的導電性粉體(實施例1~4、參考例1~4)的體積電阻率在0.3×10-5Ω‧m以下,足夠低。若將Pd鍍層的厚度增大到約240nm,則即使僅有Pd鍍層(參考例4),體積電阻率亦在0.22×10-5Ω‧m以下。從表1及表2的比較可知,若在Pd鍍層上形成厚度約20nm的Au鍍層,則體積電阻率降低。雖體積電阻率降低的程度很小,但藉由形成Au鍍層,可抑制因Pd鍍層的氧化導致的體積電阻率的增加。Au鍍層係使導電性粉體的耐濕可靠性提高。實施例1~4的導電性粉體在加壓蒸煮實驗(條件:125℃、95RH%、2.2atm)中,即使在100小時後,亦未發現體積電阻率的上升、或外觀的變化。 As can be seen from FIG. 3 and Tables 1 and 2, the conductive powders of the Pd plating layers having a thickness of about 115 nm or more (Examples 1 to 4 and Reference Examples 1 to 4) have a volume resistivity of 0.3 × 10 -5 Ω··m or less. , low enough. When the thickness of the Pd plating layer is increased to about 240 nm, even if only the Pd plating layer (Reference Example 4), the volume resistivity is 0.22 × 10 -5 Ω ‧ m or less. As is apparent from the comparison between Table 1 and Table 2, when an Au plating layer having a thickness of about 20 nm is formed on the Pd plating layer, the volume resistivity is lowered. Although the degree of volume resistivity reduction is small, by forming the Au plating layer, an increase in volume resistivity due to oxidation of the Pd plating layer can be suppressed. The Au plating improves the moisture resistance reliability of the conductive powder. In the conductive cooking samples of Examples 1 to 4 (conditions: 125 ° C, 95 RH %, 2.2 atm), no increase in volume resistivity or change in appearance was observed even after 100 hours.

另一方面,從表3及圖4可知,在NiP顆粒上僅形成Au鍍層時,即使Au鍍層的厚度為約47nm,體積電阻率亦為0.47×10-5Ω‧m。即,實施例1~4的導電性顆粒10所具有的Au的含有率雖然未滿比較例4的導電性顆粒所具有的Au的含有率的二分之 一,但實施例1~4的導電性顆粒10的體積電阻率係在比較例4的導電性顆粒的二分之一以下。 On the other hand, as is clear from Table 3 and Fig. 4, when only the Au plating layer was formed on the NiP particles, even if the thickness of the Au plating layer was about 47 nm, the volume resistivity was 0.47 × 10 -5 Ω ‧ m. In other words, the conductive particles 10 of Examples 1 to 4 have a content ratio of Au which is less than one-half of the content of Au of the conductive particles of Comparative Example 4, but the conductive of Examples 1 to 4 The volume resistivity of the particles 10 was less than one-half of that of the conductive particles of Comparative Example 4.

依此,若利用本發明的實施形態,可獲得較習知更廉價且具有足夠高的導電性及耐濕可靠性的導電性顆粒及含有此種導電性顆粒的導電性粉體。 Accordingly, according to the embodiment of the present invention, conductive particles which are less expensive and have sufficiently high conductivity and moisture resistance reliability, and conductive powder containing such conductive particles can be obtained.

利用本發明之實施形態的導電性高分子組成物係含有上述導電性粉體及高分子。此外,若無特別說明,高分子係具有電氣絕緣性。作為高分子,可根據用途而使用各種公知的高分子材料。高分子材料例如為橡膠、熱可塑性樹脂、熱硬化性樹脂或光硬化性樹脂。利用本發明之實施形態的導電性高分子組成物可廣泛地用於各向異性導電片(ACF)、各向異性導電膠(ACP)等。導電性顆粒的含有率可根據用途而適宜地設定,體積百分率大約在3%以上且50%以下,較佳係在5%以上且30%以下。 The conductive polymer composition according to the embodiment of the present invention contains the conductive powder and the polymer. Further, the polymer is electrically insulating unless otherwise specified. As the polymer, various known polymer materials can be used depending on the application. The polymer material is, for example, a rubber, a thermoplastic resin, a thermosetting resin or a photocurable resin. The conductive polymer composition according to the embodiment of the present invention can be widely used for an anisotropic conductive sheet (ACF), an anisotropic conductive paste (ACP), or the like. The content of the conductive particles can be appropriately set depending on the use, and the volume percentage is about 3% or more and 50% or less, preferably 5% or more and 30% or less.

構成上述導電性粉體的導電性顆粒10由於具有以Ni為主體的核12,因此表現出強磁性。因此,使用利用本發明之實施形態的高分子組成物,可以如專利文獻1~3記載般形成利用磁場使導電性顆粒在厚度方向上排列的各向異性導電片。此處,若使用橡膠(或者合成橡膠)作為高分子,則可獲得感壓型各向異性導電片。感壓型各向異性導電片僅在片材的厚度方向上施加壓力(壓縮)時表現出導電性,且具有若停止加壓則恢復絕緣性的性質。感壓型各向異性導電片適合用於佈線基板或半導體裝置等的檢查中臨時形成電氣連接的用途。作為橡膠,可使用公知的各種橡膠(包括合成橡膠)。從加工性、耐熱性等觀點而言,較佳為硬化型的矽橡膠。 The conductive particles 10 constituting the above-mentioned conductive powder exhibit ferromagic properties because they have the core 12 mainly composed of Ni. Therefore, in the polymer composition of the embodiment of the present invention, an anisotropic conductive sheet in which conductive particles are arranged in the thickness direction by a magnetic field can be formed as described in Patent Documents 1 to 3. Here, when rubber (or synthetic rubber) is used as the polymer, a pressure-sensitive anisotropic conductive sheet can be obtained. The pressure-sensitive anisotropic conductive sheet exhibits conductivity only when pressure (compression) is applied in the thickness direction of the sheet, and has a property of restoring insulation when the pressurization is stopped. The pressure-sensitive anisotropic conductive sheet is suitably used for temporarily forming an electrical connection in inspection of a wiring board or a semiconductor device. As the rubber, various known rubbers (including synthetic rubber) can be used. From the viewpoints of workability, heat resistance and the like, a hardening type ruthenium rubber is preferred.

ACF或ACP亦可用於形成液晶顯示裝置、平板電腦、 行動電話等電氣裝置內的電氣連接。在該等用途中,高分子係使用熱硬化性樹脂或光硬化性樹脂。作為熱硬化性樹脂,例如可使用各種環氧樹脂,作為光硬化性樹脂,可使用丙烯酸樹脂。 ACF or ACP can also be used to form liquid crystal display devices, tablets, Electrical connection in electrical equipment such as mobile phones. In such applications, a thermosetting resin or a photocurable resin is used as the polymer. As the thermosetting resin, for example, various epoxy resins can be used, and as the photocurable resin, an acrylic resin can be used.

(產業上之可利用性) (industrial availability)

本發明可適用於導電性顆粒、導電性粉體、導電性高分子組成物及各向異性導電片。 The present invention is applicable to conductive particles, conductive powders, conductive polymer compositions, and anisotropic conductive sheets.

10‧‧‧導電性顆粒 10‧‧‧Electrical particles

12‧‧‧核(NiP核) 12‧‧‧nuclear (NiP nuclear)

14‧‧‧Pd鍍層 14‧‧‧Pd plating

16‧‧‧Au鍍層 16‧‧‧Au plating

Claims (9)

一種導電性顆粒,其係具有包含Ni及P之球狀的核、覆蓋上述核之表面的Pd鍍層、及覆蓋上述Pd鍍層之表面的Au鍍層。 A conductive particle having a spherical core containing Ni and P, a Pd plating layer covering the surface of the core, and an Au plating layer covering the surface of the Pd plating layer. 如申請專利範圍第1項之導電性顆粒,其中,上述Pd鍍層為非電解還原鍍層。 The conductive particles according to claim 1, wherein the Pd plating layer is an electroless reduction plating layer. 如申請專利範圍第1或2項之導電性顆粒,其中,上述Au鍍層為非電解取代鍍層。 The conductive particles according to claim 1 or 2, wherein the Au plating layer is an electroless substitution plating layer. 如申請專利範圍第1至3項中任一項之導電性顆粒,其中,上述Pd鍍層的厚度大於上述Au鍍層的厚度,並且上述Au鍍層的厚度為5nm以上且未滿40nm。 The conductive particles according to any one of claims 1 to 3, wherein the thickness of the Pd plating layer is larger than the thickness of the Au plating layer, and the thickness of the Au plating layer is 5 nm or more and less than 40 nm. 如申請專利範圍第1至4項中任一項之導電性顆粒,其中,上述核進一步包含Cu及Sn。 The conductive particles according to any one of claims 1 to 4, wherein the core further comprises Cu and Sn. 如申請專利範圍第1至5項中任一項之導電性顆粒,其中,上述核的直徑為1μm以上且100μm以下。 The conductive particles according to any one of claims 1 to 5, wherein the core has a diameter of 1 μm or more and 100 μm or less. 一種導電性粉體,其包含申請專利範圍第1至6項中任一項之導電性顆粒,其特徵在於:累積體積分佈曲線中的中值粒徑d50為3μm以上且100μm以下,並且[(d90-d10)/d50]≦0.8。 An electroconductive powder comprising the electroconductive particle according to any one of claims 1 to 6, wherein the median diameter d50 in the cumulative volume distribution curve is 3 μm or more and 100 μm or less, and [( D90-d10)/d50]≦0.8. 一種導電性高分子組成物,其包含申請專利範圍第7項之導電性粉體、及高分子,上述高分子係橡膠、熱可塑性樹脂或熱硬化性樹脂。 A conductive polymer composition comprising the conductive powder of the seventh aspect of the patent application and a polymer, the polymer rubber, a thermoplastic resin or a thermosetting resin. 一種各向異性導電片,其係由申請專利範圍第8項之導電性高分子組成物形成,上述導電性顆粒係在厚度方向上排列。 An anisotropic conductive sheet formed of the conductive polymer composition of the eighth application of the patent application, wherein the conductive particles are arranged in the thickness direction.
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