TW201541070A - Flat substrate surface condition inspection method and flat substrate surface condition inspection device using the same - Google Patents

Abstract

The present invention provides a flat substrate surface condition inspection method capable of identifying defect types generated on a flat substrate formed with electronic components, and a flat substrate surface condition inspection device using the method. The flat substrate surface condition inspection device, which is configured to inspect and determine the defects on the surface of the flat substrate formed with electronic components as concave defects or convex defects, includes a light emitting means for emitting inspection light to an illuminated point in a specific incidence angle relative to a substrate normal line of the flat substrate; a light receiving means arranged in a space opposite to the light emitting means for receiving the scattered light; a plurality of scattered light inspector for inspecting scattered light; and a light receiving range limiting means for limiting light receiving range in a manner that a single scattered light is not received by each scattered light inspector; and a waveform comparing and determining means for comparing waveforms of scattered light amplitudes inspected by each scattered light inspector, to determine whether the defect type on the flat substrate is a concave defect or a convex defect.

Description

Surface state inspection method of planar substrate and surface state inspection device using the same

The present invention relates to a foreign matter, a flaw, and a chip which are attached to a surface of a planar substrate such as a semiconductor wafer, a mask, a disk substrate, a liquid crystal substrate, a glass substrate, a transparent film, or the like by a light scattering method. A surface state inspection technique of a planar substrate in which an abnormality in a surface state such as a crystal defect is inspected, in particular, on a surface of a planar substrate for crystal defects, scratches, slips, water marks, laminate defects, and the like. A surface state inspection method of a planar substrate on which a defect of the unevenness is generated is examined and examined, and a surface state inspection device using the planar substrate having the method.

On a substrate on which an electronic component or the like is formed, even if there is only a small amount of foreign matter (dust or defects), there is a flaw in the defective product. Therefore, the inspection of the foreign matter or the surface state of the substrate becomes indispensable. . In addition, in addition to the removal of defective products, the inspection of the surface state of the substrate also has a purpose of specifying the cause of the defect in the manufacturing process of the electronic component. Therefore, it is necessary to know the detected defect. The type and size of the trap.

Examples of the type of defects generated on a planar substrate such as a semiconductor wafer include crystal defects, slips, scratches (scratches), and tannic acid, in addition to foreign matter, scratches, and cracks. Round patterns (water marks), layer defects, spherical foreign objects, and the like. Here, crystal defects, slippage, and scratches can be classified into concave defects, and on the other hand, spherical foreign matter, water marks, and laminated defects can be classified into convex defects.

In general, the surface state of the planar substrate is examined by using a method in which the surface of the substrate is irradiated with laser light having good directivity, and the light-receiving light is used to detect reflection from the surface of the substrate. The scattered light is irradiated and the irradiation spot of the laser light is scanned in two dimensions to inspect the entire surface of the substrate. For example, in the foreign matter inspection device for a transparent planar substrate described in Patent Document 1, a foreign matter inspection device for a transparent planar substrate is disclosed in which a detection light is applied to a transparent flat substrate by a light projection system. A foreign matter inspection device that receives light due to foreign matter existing on the transparent planar substrate and receives foreign matter present on the transparent planar substrate, and is characterized in that it is provided with The light projecting system is disposed on one surface (hereinafter referred to as a surface) of the transparent planar substrate, and irradiates the detection light with a specific incident angle with respect to a substrate normal of the transparent planar substrate. And the light receiving system is provided on the surface side, and is provided at a position opposite to the light projecting system based on the irradiation point of the detection light, and the light receiving system is provided Yes: the aforementioned detection light irradiated from the aforementioned light projecting system is irradiated in the foregoing The first scattered light generated when the foreign matter on the surface is transmitted and the second scattered light generated when the detection light passes through the transparent planar substrate and is irradiated to the foreign matter existing on the other surface (hereinafter referred to as the back surface) is collected. a collecting lens; and an optical element that splits the first scattered light and the second scattered light from the collecting lens into two paths; and receives the first scattered light by the first scattered light. And a second scattered light receiving sensor that receives the second scattered light.

The foreign matter inspection device described in Patent Document 1 is formed by a light-receiving device that irradiates the laser light that is the detection light and a light-receiving sensor that receives the scattered light from the foreign matter that is irradiated with the laser light. The pair of scattered light is irradiated, and the light receiving system scans in the XY direction to perform inspection of foreign matter adhering to the substrate or the like. However, in the technique disclosed in Patent Document 1, although it is known that there are some abnormalities in the surface state of the wafer based on the scattered light, the system does not recognize that the abnormalities are convex. A defect in shape or a defect in a concave shape.

Patent Document 2 discloses a technique of irradiating a substrate with laser light from a plurality of directions. Patent Document 2 relates to a foreign matter inspection device including a plurality of light projectors that irradiate a plurality of laser beams at different points from different angles with respect to a surface of an inspection object; A detector that scatters light from a foreign object and detects a scattered light intensity signal corresponding to the intensity of the scattered light. The technique disclosed in Patent Document 2 is to irradiate laser light at the same point from a plurality of laser light sources for the purpose of raising the intensity of the scattered light by irradiating the laser light to the same point. Can be detected by the detector Level. Therefore, in the technique disclosed in Patent Document 2, the same as the technique disclosed in Patent Document 1, even if it is possible to detect that there is an abnormality in the surface state of the wafer, it is impossible to recognize the An abnormality is a problem of a convex defect or a concave defect.

[Previous Technical Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2013-140061

[Patent Document 2] Japanese Patent Laid-Open No. Hei 11-258157

As such, in the prior art technique of using scattered light to inspect the surface state of a transparent planar substrate, it is not possible to distinguish whether the abnormality generated in the surface state is convex or concave. Therefore, for example, it is not possible to specify what kind of defects are caused in the engineering of the electronic component manufacturing process.

Therefore, an object of the present invention is to provide a method for inspecting a surface state of a planar substrate that can recognize a type of a defect generated on a planar substrate on which an electronic component or the like is formed, and a surface using the method. Status check device.

In order to solve the above problem, the issue described in claim 1 is issued. A surface state inspection device for a planar substrate is configured to scan a surface of a planar substrate placed on a platform by detecting light irradiated by a light projecting system, and to detect by a light receiving system The scattered light from the surface is detected, and based on the detected output signal from the light receiving system, it is checked whether the defect type of the surface of the planar substrate is a concave defect or a convex defect. A surface state inspection device for a planar substrate, comprising: a light projecting system for causing the detection light to have a specific incident angle with respect to a surface normal of the planar substrate with respect to a surface of the planar substrate; Irradiating to the irradiation spot; and receiving the light system in a space opposite to the substrate normal to the projection light system, and receiving the scattered light; and a plurality of scattered light detectors are detected The light-receiving range limiting means and the light-receiving range limiting means are configured such that the same scattered light is not incident on the scattered light detectors. And the waveform comparison determining means compares the waveforms of the scattered light intensities detected by the scattered light detectors, and determines that the defect type of the planar substrate is a concave defect or a convex defect What?

The invention according to claim 2 is characterized in that, in the surface state inspection device of the planar substrate according to claim 1, the image is characterized in that the irradiation point and the received light are received by the irradiation target When the lower end portion of the light receiving port of the light receiving system is connected, the angle of the connecting line with respect to the normal line of the substrate is greater than the angle of the normal reflected light from the irradiation point with respect to the substrate normal. The light receiving system is set in a small angle manner.

The invention of claim 3, wherein the surface state inspection device for a planar substrate according to claim 1 is characterized in that the plurality of scattered light detectors are provided in the light receiving device. The system is a scattered light detector that detects each of the scattered light beams separated by a half mirror that divides the scattered light.

The invention described in claim 4 is a surface state inspection device for a planar substrate which scans a surface of a planar substrate placed on a stage by detecting light irradiated by a light projecting system. And detecting the scattered light from the surface by the light receiving system, and detecting the defect type of the surface of the planar substrate based on the detected output signal from the light receiving system, being a concave defect or The surface state inspection device of the planar substrate is characterized in that: the projection light system is configured to apply the detection light to a substrate normal to the surface of the planar substrate with respect to the surface of the planar substrate And irradiating the irradiation spot with a specific incident angle; and the first light receiving system is disposed in a space on a side opposite to the light projecting line with respect to the substrate normal, and receives the scattered light; The light receiving system is provided on the surface side, is disposed slightly above the irradiation point of the detection light, and receives the scattered light; and the light receiving range limiting means is provided in the light receiving system And limiting the light receiving range so that the same scattered light is not incident on the scattered light detectors; and the waveform comparison determining means is detected by the respective scattered light detectors The waveform of the scattered light intensity is compared, and it is determined that the defect type of the planar substrate is a concave defect or a convex What is the defect?

The invention according to claim 5 is characterized in that, in the surface condition inspection device of the planar substrate according to claim 4, the invention is characterized in that the irradiation point and the received light are received by the irradiation target When the lower end portion of the light receiving port of the light receiving system is connected, the angle of the connecting line with respect to the normal line of the substrate is greater than the angle of the normal reflected light from the irradiation point with respect to the substrate normal. The light receiving system is set in a small angle manner.

The invention described in claim 6 is a method for inspecting a surface state of a planar substrate, wherein the detection light irradiated by the light projecting system is scanned on a surface of a planar substrate placed on the stage. Further, while feeding at a specific interval toward the axial direction orthogonal to the scanning direction, the scattered light from the surface is detected by the light receiving system, and the output from the detected light receiving system is detected. a method of inspecting a surface state of the planar substrate by detecting a defect type of the surface of the planar substrate, wherein the detecting light is for the planar substrate The surface is irradiated to the irradiation spot at a specific incident angle with respect to the substrate normal of the planar substrate; and is disposed in a space opposite to the projection light system with respect to the substrate normal, and When the irradiation point is connected to the lower end portion of the light receiving port of the light receiving system that receives the scattered light, the angle of the connecting line with respect to the substrate normal line is not affected by Adjusting the angle of the light receiving system relative to the normal line of the substrate so that the light is reflected from the irradiation point, so that the scattering from the light receiving port is not caused The manner in which the light is repeatedly incident into the detector, and the light receiving range is limited; the intensity of the scattered light is detected by a plurality of detectors; and the scattering detected by the scattered light detectors described above The waveform of the light intensity is compared, and it is determined whether the surface defect of the planar substrate is a concave defect or a convex defect.

The invention according to claim 7 is characterized in that, in the method of inspecting the surface state of the planar substrate described in claim 6, the invention is characterized in that the aforementioned feature is adopted by a half mirror. The scattered light is split by 2, and the intensity of each scattered light that has been split is detected by two scattered light detectors.

The invention described in claim 8 is a method for inspecting a surface state of a planar substrate by scanning the surface of the planar substrate placed on the stage by the detection light irradiated by the light projecting system. Further, while feeding at a specific interval toward the axial direction orthogonal to the scanning direction, the scattered light from the surface is detected by the light receiving system, and the output from the detected light receiving system is detected. a method of inspecting a surface state of the planar substrate by detecting a defect type of the surface of the planar substrate, wherein the detecting light is for the planar substrate The surface is irradiated to the irradiation spot at a specific incident angle with respect to the substrate normal of the planar substrate; and is disposed in a space on the opposite side of the projection light system from the substrate normal line, and When the irradiation point and the lower end portion of the light receiving port of the scattered light of the light receiving system are connected, the angle of the connecting line with respect to the normal line of the substrate becomes unacceptable Light from the aforementioned illumination point The first light receiving system provided by the method of positively reflecting light receives the scattered light; and is disposed on the surface side directly above the irradiation point of the detection light, and receives the light scattered light (2) a light receiving system that receives the scattered light; and compares a waveform of the intensity of the scattering detected by the first light receiving system and the second light receiving system, and determines that the surface defect of the planar substrate is concave Defect or convex defect.

According to the present invention, it is possible to provide a surface state inspection method for a planar substrate capable of identifying a defect type of a planar substrate which cannot be detected in the prior art, and a surface state inspection device using the same. In addition, it is possible to specify a cause of defects in a semiconductor manufacturing process such as an electronic component, and it is possible to improve the manufacturing process of a semiconductor element or the like.

1, 2, 3, 4‧‧‧ Surface condition inspection device for flat substrate

10‧‧‧Projection

20‧‧‧Lighting system

12‧‧‧reflective light

13, 14, 15, 16, 17, 18, 19‧‧‧ scattered light

41‧‧‧Slit

50‧‧‧Semi-transparent mirror

80‧‧‧XY platform

90‧‧‧ illuminating point

91‧‧‧ concave defects

92‧‧‧ convex defects

100‧‧‧ planar substrate

101‧‧‧Substrate normal

102‧‧‧ wafer

110‧‧‧Laser light source

200, 220, 221‧‧ ‧ lens barrel

210‧‧‧Acceptor

240, 241‧‧‧ mask

230, 231, 330a, 330b‧‧‧scattered light detector

1400‧‧‧Lighting system

Fig. 1 is a view showing the configuration of a surface state inspection device according to one embodiment of the present invention.

[Fig. 2] is a manner in which the scattered light is generated when the detection light 11 is irradiated to the concave defect when there is a defect of a fine concave shape on the surface of the planar substrate 100. A picture of the show.

[Fig. 3] is for the presence of micro on the surface of the planar substrate 100. In the case of a fine convex defect, a manner in which the scattered light is generated when the detection light 11 is irradiated to the convex defect is generated.

[Fig. 4] is a manner in which the scattered light is incident when the detection light 11 is irradiated to the concave defect when there is a defect of a fine concave shape on the surface of the planar substrate 100. A picture showing the matter in the scattered light detector.

[Fig. 5] In the case where there is a fine convex defect on the surface of the planar substrate 100, how the scattered light is incident when the detection light 11 is irradiated to the convex defect A picture showing the matter in the scattered light detector.

Fig. 6 is a view showing the configuration of the surface state inspection device 2 of the planar substrate which is one of the embodiments of the present invention.

FIG. 7 is a view showing a result of inspection by the surface state inspection device 2 of the planar substrate in the defect type (concave defect, convex defect) of the wafer 102 for tantalum carbide.

Fig. 8 is a view showing a waveform of a portion output from the detector 30 and the detector 40 of the surface state inspection device 2 of the planar substrate.

FIG. 9 is a view showing a waveform of a portion output from the detector 30 and the detector 40 of the surface state inspection device 2 of the planar substrate.

[Fig. 10] is a result of checking the defect type (concave defect) of the wafer 102 shown in Fig. 7, and confirming the concave defect of the wafer 102 by a laser microscope. The result is a picture of the show.

[Fig. 11] is a result of checking the defect type (convex defect) of the wafer 102 shown in Fig. 7, and confirming the convex defect of the wafer 102 by a laser microscope. The result is a picture of the show.

FIG. 12 is a view showing a configuration of a surface state inspection device 3 which is a planar substrate according to a second embodiment of the present invention.

FIG. 13 is a view showing a configuration of a surface state inspection device 4 which is a planar substrate according to a third embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. Fig. 1 is a view showing the configuration of a surface state inspection device 1 of a planar substrate which is one embodiment of the present invention. From the laser light source 110 constituting the light projecting system 10, the detection light (laser light) 11 is irradiated with respect to the normal 101 of the substrate at a specific incident angle θ with respect to the surface of the planar substrate 100. As a result, the specular reflected light 12 and the scattered light 13 , 14 , and 15 generated by the planar substrate 100 are incident on the light receiving system 20 from the light receiving port 210 constituting the light receiving system 20 . Further, the angle of reflection of the specular reflected light with respect to the substrate normal 101 is θ.

The inclination angle of the light receiving system 20 is adjusted so that the specular reflection light 12 is not incident on the light receiving port 210. In FIG. 1, when the irradiation point 90 and the lower end portion of the light receiving port 210 are joined, the angle of the connecting line with respect to the normal 101 becomes smaller than θ (θ). The method of ₁ ) is set so that the specular reflected light 12 is not received by the light receiving system 20. Here, in the description of the present embodiment, the scattered light incident on the light receiving system 20 is defined as the scattered light 14 incident on the lower end portion of the light receiving port 210, and the incident light entering the light receiving port 210. The scattered light 15 at the upper end portion defines the entire scattered light between the scattered light 14 and the scattered light 15 as the scattered light 13.

In FIG. 1, the scattered light 14 incident from the light receiving port 210 enters the lens barrel 220 from the lens barrel 200, and is shielded by the mask 240 which is a light shielding means. On the other hand, the scattered light 14 split by the half mirror 50 provided at the lens barrel 200 is incident on the lens barrel 221 and is incident on the scattered light detector 231.

In the surface state inspection device 1 of the planar substrate, about half of the scattered light on the side of the scattered light 14 of the scattered light 13 is incident on the scattered light detector 231, and the scattered light 13 other than the scattered light 13 (about half of the side of the scattered light 15) The scattered light is incident on the scattered light detector 230. The scattered light detector 230 and the scattered light detector 231 output a waveform of an output signal (electrical signal) corresponding to the intensity of the received scattered light. Further, when the irradiation spot 90 is a mirror surface, no scattered light is generated, and only the specular reflected light 12 is present.

2 is a view showing a pattern of scattered light generated when the detection light 11 is irradiated from the laser light source 110 to the concave defect 91 of the planar substrate 100 in which no foreign matter or defects are present. Here, FIG. 2(a) is a scattered light 14 generated when the detection light 11 is irradiated to the lower surface (lower right lowering surface) of the concave defect 91 of the planar substrate 100 from the laser light source 110. , the generation of scattered light 15 and scattered light 13 The pattern is shown as a picture.

Among the scattered light generated when the detection light 11 is irradiated on the slope surface (lower right lowering surface) of the concave defect 91, the intensity of the scattered light on the side of the scattered light 14 is strong, and the scattered light is directed toward The 15 side advances (becomes counterclockwise) and the intensity of the scattered light becomes weak, which is the first time known in the present invention.

2(b) is a scattered light 14-1, which is generated when the detection light 11 is irradiated onto the slope (upper right rising surface) of the concave defect 91 of the planar substrate 100 from the laser light source 110. The pattern of the light 15-1 and the scattered light 13 is shown as a display. Among the scattered light generated when the detection light 11 is irradiated on the slope surface (upper right rising surface) of the concave defect 91, the intensity of the scattered light on the side of the scattered light 14-1 is strong, and is scattered toward the surface. The light 15-1 side advances (becomes clockwise) and the intensity of the scattered light 13 becomes weak, which is the first time known in the present invention.

3 is a view showing a pattern of scattered light generated when the detection light 11 is irradiated from the laser light source 110 to the convex defect 92. Here, FIG. 3( a ) is a scattered light 14 , scattered light 15 , and scattered light generated when the detection light 11 is irradiated onto the slope (upper right rising surface) of the convex defect 92 of the planar substrate 100 . The production pattern of 14 is shown as a picture. When the detection light 11 is irradiated on the slope surface (upper right rising surface) of the convex defect 92, the intensity of the scattered light on the side of the scattered light 14 is strong, and proceeds toward the side of the scattered light 15 (becomes clockwise) Direction) and the intensity of the scattered light 13 is weakened, which is in the present invention The first time I learned.

3(b) is a scattered light 14-1 generated when the detection light 11 is irradiated onto the slope (lower right lowering surface) of the convex defect 92 of the planar substrate 100 from the laser light source 110, The generated pattern of the scattered light 15-1 and the scattered light 13 is shown as a display. The intensity of the scattered light generated when the detection light 11 is irradiated on the slope surface (lower right lowering surface) of the convex defect 92 is advanced toward the side of the scattered light 15-1 (counterclockwise direction). The intensity of the scattered light 13 is weakened, which is the first time known in the present invention.

4 is a view of how the generated scattered light is generated when the detection light 11 is irradiated to the surface of the planar substrate 100 by the surface state inspection device 1 of the planar substrate. A picture taken into the scattered light detector 230 and the scattered light detector 231 is shown.

As shown in Fig. 4(a), the scattered light 16 split by the half mirror 50 is incident on the scattered light detector 231, but is transmitted through the half mirror 50. The light 16 is shielded by the mask 240 and does not enter the scattered light detector 230. That is, the scattered light 13 on the side of the scattered light 16 is incident on the scattered light detector 231, and the scattered light 13 on the side of the scattered light 17 is incident on the scattered light detector 230.

4(b) is a view for detecting when the planar substrate 100 is moved and the detection light 11 is scanned from the slope below the concave defect 91 toward the slope above the concave defect 91 (upper right rising surface) Light 11 When it is incident on the slope surface (upper right rising surface) of the concave defect, the manner in which the scattered light is incident into the scattered light detector 230 and the scattered light detector 231 is shown. As shown in FIG. 4(b), when the detection light 11 is irradiated onto the slope (upper right rising surface) of the concave defect 91, the scattered light 19 at the upper end of the light receiving port 210 is incident to the scattering. Light detector 230. On the other hand, the scattered light 19 split by the half mirror 50 is shielded by the mask 241 and does not enter the scattered light detector 231. On the other hand, the scattered light 18 split by the half mirror 50 in the scattered light 18 from the lower end portion of the light receiving port 210 is incident on the scattered light detector 231, but The scattered light 18 that has passed through the half mirror 50 is shielded by the mask 240 and does not enter the scattered light detector 230.

4(c), the detection light 11 is irradiated to the concave defect 91 in such a manner, and the detection light 11 is directed from the slope (lower right lowering surface) of the concave defect 91 toward the upslope surface. The waveform appearing at the scattered light detector 230 and the scattered light detector 231 is shown as a map when scanning is performed (upper right rising surface). When the detection light is irradiated for the concave defect 91, if the waveform of the electrical signal output from the scattered light detector 230 and the scattered light detector 231 is compared, it first appears at the scattered light detector 231. The detected waveform of the scattered light is then followed by a detected waveform similar to that at the scattered light detector 230. This is because the intensity of the scattered light 13 on the side of the scattered light 16 is stronger than that of the scattered light 13 on the side of the scattered light 17 shown in FIG. 4(a), and therefore, when it is right for the concave defect 91 When the lower falling surface illuminates the detection light, the scattered light detector The 231 series outputs a signal similar to that shown in FIG. 4(c). Further, if the detection light is irradiated to the upper right rising surface as shown in FIG. 4(b), the scattered light 13 on the side of the scattered light 19 is obtained. Since the scattered light 13 on the side of the scattered light 18 is stronger, the waveform of the signal output from the scattered light detector 231 is weakened, and accordingly, the scattered light detector 230 is output similarly. The waveform of the signal. The waveform comparison determination means (not shown) is determined by comparing the waveforms of the detector 230 and the detector 231 to the type of the defect type. Further, as the waveform comparison determining means, a waveform checker or a waveform determination digitizer which is generally used can be used as long as the waveform comparison can be performed.

5 is a view of how the scattered light is incident when the detection light 11 is irradiated to the convex defect when there is a fine convex defect on the surface of the planar substrate 100. A picture of the display in the scattered light detector.

As shown in FIG. 5(a), when the detection light 11 is irradiated to the upper surface of the convex defect 92 (upper right rising surface), the scattered light on the side of the scattered light 16-1 is semi-transparent. The scattered light 16-1, which is split by the mirror 50, is incident on the scattered light detector 231, but the scattered light 16-1 transmitted through the half mirror 50 is shielded by the mask 240. It is not incident into the scattered light detector 230. On the other hand, the scattered light 13 on the side of the scattered light 17-1 is incident on the scattered light detector 230, but the scattered light 17-1 split by the half mirror 50 is covered by the mask 241. The light is blocked without being incident into the scattered light detector 231.

Figure 5 (b) is for moving the planar substrate 100 How the scattered light generated when the detection light 11 is scanned from the sloped surface of the convex defect 92 toward the lower surface of the convex defect 92 (lower right lowering surface) is incident to the scattered light detection The device 230 and the scattered light detector 231 are shown in a diagram. As shown in FIG. 5(b), when the detection light 11 is irradiated to the slope of the convex defect 92 (lower right lowering surface), the scattered light 18-1 is shielded by the mask 240 without being shielded The scattered light detector 230 is incident on the scattered light detector 230, but the scattered light 18-1 split by the half mirror 50 is incident on the scattered light detector 231. On the other hand, the scattered light 19-1 incident on the upper end portion of the light receiving port 210 is incident on the scattered light detector 230, but the scattered light 19-1 split by the half mirror 50, It is shielded by the mask 241 and does not enter the scattered light detector 231.

Fig. 5(c) is a view in which the detection light 11 is irradiated to the convex defect 92 as such, and the detection light is directed from the upper surface of the convex defect 92 (upper right rising surface) toward the lower surface (right The waveform appearing at the scattered light detector 230 and the scattered light detector 231 is shown as a graph when scanning is performed. It is known that when the detection light 11 is irradiated for the convex defect 92, if the waveform of the signal output from the scattered light detector 230 and the scattered light detector 231 is compared, the scattered light detector is first used. A waveform of scattered light appears at 230, and then a waveform similar to that appears at the scattered light detector 231. This is because the intensity of the scattered light on the side of the scattered light 17-1 is stronger than that of the scattered light 13 on the side of the scattered light 16-1 shown in FIG. 5(a), and therefore, when it is for a convex defect From the upper right rising surface of 92, when the detection light is illuminated, the scattered light detector The 230 series output has a signal as shown in Fig. 5(c), and if it is irradiated with the detection light for the upper right rising surface as shown in Fig. 5(b), the scattering due to the side of the scattered light 18-1 Since the light 13 is stronger than the scattered light 13 on the side of the scattered light 19-1, the scattered light detector 231 outputs a signal waveform as a general output from the scattered light detector 230.

[Examples]

Fig. 6 is a view showing the configuration of the surface state inspection device 2 of the planar substrate which is one of the embodiments of the present invention. The surface state inspection device 2 of the planar substrate shown in FIG. 6 includes a laser light source 110 constituting a light projecting system, a light receiving port 70 constituting the light receiving system, and a light beam incident from the light receiving port 70. The half mirror 50, and the detector 30, the detector 40, and the range of scattered light incident on the detector 30 or the detector 40, respectively, are detected by the scattered light split by the half mirror 50. The slit 32 and the slit 42 which are restricted, and a mask 31 and a mask 41 which shield a part of the scattered light from the slit 32 and the slit 42 are shielded. Further, the surface state inspection device 2 for a planar substrate includes an XY stage 80 for moving the planar substrate 100 in the X-axis-Y-axis direction, and a height-controlled displacement sensor for controlling the heights of the light projecting system and the light receiving system. 60. Further, although the waveform comparison determination means is provided, it is not shown.

FIG. 7 is a view of the defect type (concave defect, convex defect) of the wafer 102 for tantalum carbide by the above-mentioned planar substrate. The surface condition inspection device 2 performs a check on the result of the inspection. ● represents a convex defect, and x represents a concave defect.

Fig. 8 is a view showing the waveform of the output signal outputted from the detector 30 and the detector 40 of the surface state inspection device 2 of the planar substrate. From the position of the wafer 102 shown in Fig. 7, a waveform similar to that shown in Fig. 8 is detected. When such a waveform is detected, as described above, the defect type is a concave defect.

Fig. 9 is a view showing a waveform of a portion output from the detector 30 and the detector 40 of the surface state inspection device 2 of the planar substrate. From the location of the wafer 102 shown in Fig. 7, a waveform similar to that shown in Fig. 9 is detected. When such a waveform is detected, as in the above, the defect type at that place is a convex defect.

10 is a result of examining the defect type of the wafer 102 shown in FIG. 7 based on the surface state inspection device 2 by the planar substrate, and the concave of the wafer 102 by a laser microscope. The results of the confirmed defects are shown in the figure. As a result, the concave defects of the wafer 102 obtained by the surface state inspection device 2 of the planar substrate and the concave defects of the wafer 102 obtained by the laser microscope are slightly coincident with each other.

Figure 11 is the same result of confirming the convex defects of the wafer 102 by a laser microscope. As a result, the convex defects of the wafer 102 obtained by the surface state inspection device 2 of the planar substrate and the convex defects of the wafer 102 obtained by the laser microscope are almost identical to each other.

Figure 12 is a second embodiment of the present invention. The configuration of the surface state inspection device 3 of the planar substrate is shown. The surface state inspection device 3 of the planar substrate shown in Fig. 12 is provided with two scattered light detectors 330a and 330b at the end of the lens barrel 320, and is configured to reverse the light from the lower side of the light receiving port 310. The half of the scattered light 13 in the hour hand direction is received by the scattered light detector 330a, and a half of the scattered light 13 in the clockwise direction from the upper side of the light receiving port 310 is received by the scattered light detector 330b. Further, it is configured such that the field of view of the detector 330a and the detector 330b can be restricted by the slit 41.

FIG. 13 is a view showing a configuration of a surface state inspection device 4 which is a planar substrate according to a third embodiment of the present invention. The surface state inspection device 4 of the planar substrate shown in FIG. 13 irradiates the detection light 11 with a specific incident angle with respect to the substrate normal of the planar substrate from the surface of the planar substrate 100 from the laser light source 110. The light-receiving light is received by the first light-receiving system 400 that is set so as to receive the specular reflected light from the irradiation spot in a space on the side opposite to the laser light source 110 with respect to the substrate normal. 13, and the scattered light 13 received by the detector 1400 is detected. Further, a second light receiving system 410 that is disposed slightly above the irradiation spot of the detection light 11 and receives the light-scattered light 13-1 is provided, and the scattered light detector 1310 detects the scattered light 13-1. Then, the waveforms of the output signals from the scattered light detectors 1400 and 1410 which are the waveforms of the scattered light intensity detected by the first light receiving system 400 and the second light receiving system 410 are compared, and the planar substrate is determined. The type of surface defect is either concave or convex.

1‧‧‧ Surface condition inspection device for flat substrate

10‧‧‧Projection

11‧‧‧Detecting light

13‧‧‧scattered light

16‧‧‧scattered light

17‧‧‧scattered light

18‧‧‧scattered light

19‧‧‧scattered light

50‧‧‧Semi-transparent mirror

91‧‧‧ concave defects

100‧‧‧ planar substrate

110‧‧‧Laser light source

210‧‧‧Acceptor

230, 231‧‧‧scattered light detector

240, 241‧‧‧ mask

Claims (8)

A surface state inspection device for a planar substrate is configured to scan a surface of a planar substrate placed on a stage by detecting light irradiated by a light projecting system, and to face the scanning at a specific interval When the directions are orthogonal to the axial direction, the scattered light from the surface is detected by the light receiving system, and the surface of the planar substrate is inspected based on the detected output signal from the light receiving system. The defect type is a concave-shaped defect or a convex-shaped defect, and the surface state inspection device of the planar substrate is characterized in that the light-emitting system is configured to apply the detection light to the surface of the planar substrate. And irradiating the irradiation point with a specific incident angle with respect to the substrate normal of the planar substrate; and the light receiving system is provided in a space on the opposite side of the light projecting line from the substrate normal. And receiving the scattered light; and the plurality of scattered light detectors detect the scattered light of the light received by the light receiving system; and the light receiving range limiting means does not make the same The manner in which the incident light is incident on each of the scattered light detectors is limited to the light receiving range; and the waveform comparison determining means compares the waveforms of the scattered light intensities detected by the respective scattered light detectors, and It is determined whether the defect type of the planar substrate is a concave defect or a convex defect. The surface of the planar substrate as recited in claim 1 In the state inspecting device, when the irradiation point and the lower end portion of the light receiving port of the light receiving system of the received light are received, the angle of the connecting line with respect to the substrate normal line becomes The light receiving system is set such that the angle of the specular reflected light from the irradiation point is smaller than the angle of the substrate normal. The surface state inspection device for a planar substrate according to the first aspect of the invention, wherein the plurality of scattered light detectors are provided in the light receiving system, and the scattered light is split. Two scattered light detectors respectively detected by the scattered light split by the half mirror. A surface state inspection device for a planar substrate is configured to scan a surface of a planar substrate placed on a stage by detecting light irradiated by a light projecting system, and to face the scanning at a specific interval When the directions are orthogonal to the axial direction, the scattered light from the surface is detected by the light receiving system, and the surface of the planar substrate is inspected based on the detected output signal from the light receiving system. The defect type is a concave-shaped defect or a convex-shaped defect, and the surface state inspection device of the planar substrate is characterized in that the light-emitting system is configured to apply the detection light to the surface of the planar substrate. Irradiating the irradiation spot with a specific incident angle with respect to the substrate normal of the planar substrate; and the first light receiving system is provided on a space opposite to the projection light system with respect to the substrate normal Medium and receiving the aforementioned scattered light; and The second light receiving system is provided on the surface side, is disposed slightly above the irradiation point of the detection light, and receives the scattered light; and the light receiving range limiting means is provided in the light receiving system, and is not The same kind of scattered light is incident on the scattered light detectors, and the light receiving range is limited; and the waveform comparison determining means is for the scattered light intensity detected by each of the scattered light detectors. The waveforms are compared and it is determined whether the surface defect of the planar substrate is a concave defect or a convex defect. The surface state inspection device for a planar substrate according to the fourth aspect of the invention, wherein the irradiation point and the lower end portion of the light receiving port of the light receiving system that receives the scattered light are connected The angle of the connecting line with respect to the normal line of the substrate is set to be smaller than the angle of the specular reflected light from the irradiation point with respect to the normal line of the substrate, and the light receiving system is set. A method for inspecting a surface state of a planar substrate by scanning the surface of the planar substrate placed on the platform by the detection light irradiated by the light projecting system, and facing the scanning at a specific interval When the directions are orthogonal to the axial direction, the scattered light from the surface is detected by the light receiving system, and the surface of the planar substrate is inspected based on the detected output signal from the light receiving system. The defect type is a concave defect or a convex defect, and the surface state inspection method of the planar substrate is characterized in that the detection light is a substrate method with respect to the surface of the planar substrate with respect to the surface of the planar substrate Line and irradiate to the illumination with a specific angle of incidence In a space provided on a side opposite to the light projecting line with respect to the normal line of the substrate, the irradiation point and the lower end portion of the light receiving port of the light receiving system that receives the scattered light are connected. When the angle of the connecting line with respect to the normal line of the substrate is such that the light is not reflected from the irradiation point, the angle of the light receiving system relative to the normal line of the substrate is adjusted; The manner in which the scattered light incident from the light receiving port is repeatedly incident into the detector is limited to a light receiving range, and the intensity of the scattered light is detected by a plurality of detectors; The waveform of the intensity of the scattered light detected by each of the scattered light detectors is compared, and it is determined whether the surface defect of the planar substrate is a concave defect or a convex defect. The method for inspecting a surface state of a planar substrate according to the sixth aspect of the invention, wherein the scattered light is split into 2 by a half mirror, and each of the scattered light that is split is split. The intensity is detected by two scattered light detectors. A method for inspecting a surface state of a planar substrate by scanning the surface of the planar substrate placed on the platform by the detection light irradiated by the light projecting system, and facing the scanning at a specific interval When the directions are orthogonal to the axial direction, the scattered light from the surface is detected by the light receiving system, and the surface of the planar substrate is inspected based on the detected output signal from the light receiving system. The type of defect is which is a concave defect or a convex defect. The surface state inspection method of the planar substrate is characterized in that the detection light is irradiated onto the irradiation spot with respect to a surface normal of the planar substrate with respect to a surface normal of the planar substrate; When the irradiation point and the lower end portion of the light receiving port of the scattered light of the light receiving system are connected to each other in a space provided on a side opposite to the light projecting line with respect to the substrate normal line, The angle of the connecting line with respect to the normal line of the substrate is a first light receiving system provided so as not to receive the specular reflected light from the irradiation spot, and the received light is received by the light; Provided at a position slightly above the irradiation spot of the detection light, and receiving the second light receiving system of the scattered light to receive the scattered light; and the aforementioned detection by the first light receiving system and the second light receiving system The waveform of the intensity of the scattering is compared, and it is determined whether the surface defect of the planar substrate is a concave defect or a convex defect.