TW201538039A - High frequency power system and plasma processing device equipped with the system - Google Patents

Abstract

Provided is a high frequency power system making the replacement operation of machines supplying high frequency power more convenient and optimizing its assembly reproducibility to provide an overall high frequency power unit with high energy efficiency. The high frequency power system comprises load parts 5, 6 consuming high frequency power; high frequency power sources 12, 22 for supplying high frequency power to the load parts 5, 6; integrators 14, 24 connected between the load parts 5, 6 and the high frequency power sources 12, 22 and integrating the load side impedance of the high frequency power sources 12, 22. The load parts 5, 6, the high frequency power sources 12, 22 and the integrators 14, 24 are respectively placed in a closed space composed of the grounded electromagnetic shielding materials 18, 28.

Description

High frequency power supply system and plasma processing apparatus having the same

The present invention relates to a high-frequency power supply system that consumes high-frequency power, a high-frequency power supply system that supplies high-frequency power of the high-frequency power of the load, and a plasma processing apparatus including the high-frequency power supply system.

The plasma processing apparatus described above is exemplified by an etching apparatus shown in the following Patent Document 1 and is a generally known device structure. The utility model comprises: a plasma generating space disposed above the etching device, a processing chamber formed under the space, a base for loading the processing target substrate in the processing space, and a process of winding around the plasma generating space. a coil on the outdoor side of the chamber, a processing gas supply unit that supplies the gas in the plasma generation space, a first high-frequency power supply that supplies high-frequency power to the coil, a connection coil, and a first high-frequency power supply, and integrates the first high a first integrator for the power supply load side impedance and the first high frequency power supply impedance, a second high frequency power supply for supplying high frequency power to the base, a connection base and a second high frequency power supply, and integrating the second high frequency The second integrator of the power supply side impedance and the second high frequency power supply impedance.

In order to prevent the electromagnetic wave energy from being dissipated, the plasma processing device using high-frequency power has been shielded by electromagnetic shielding parts on high-frequency machines. A schematic construction of the electromagnetic shielding material shield of the prior art plasma processing apparatus is shown in FIG. According to FIG. 6, the plasma processing apparatus 100 basically has the same structure as the etching apparatus shown in the above-mentioned Patent Document 1, and has a processing chamber 101, a coil 104, a gas supply unit 106, a first high-frequency power source 110, and a first 1 integrator 120, 2nd high The frequency power source 130 and the second integrator 140.

The processing chamber 101 is composed of an upper chamber 102 and a lower chamber 103 disposed below the lower chamber 102. A plasma generating space 102a is formed in the upper chamber 102, and a processing space communicating with the plasma generating space 102a is formed in the lower chamber 103. 103a, a base 105 on which a substrate to be processed is placed is disposed in the processing space 103a, and the coil 104 is wound around the outer side of the upper chamber 102. Further, the upper chamber 102 and the coil 104 are mounted in a shield case 107 made of an electromagnetic shielding material. The outer peripheral wall portion (portion shown by the hatching in the figure) of the upper chamber 102 is made of an insulating ceramic, and the shield case 107 is connected below the upper chamber 102 (see the black circle portion in Fig. 6).

Further, an insulating member 105a is provided between the base 105 and the lower chamber 103, and the insulating member 105a insulates the base 105 from the lower chamber 103, and the lower region of the base 105 is connected to the lower chamber. The shield box 108 at the lower end of 103 (refer to the black circle portion in FIG. 6) is shielded together with the lower chamber 103. Since the gas supply unit 106 is not connected to the high-frequency power, the gas supply unit 106 is disposed outside the shield case 107, and supplies the process gas to the plasma generation space 102a of the upper chamber 102 through an appropriate pipe. Further, the shield case 107 is provided with an input terminal 107a, and one end of the input terminal 107a and the coil 104 is connected by a transmission line, and the other end of the coil 104 is connected to the shield case 107 via the input terminal 107a. Next, an input terminal 108a is provided in the shield case 108, and the input terminal 108a and the base 105 are connected by a transmission line.

The lower chamber 103 is grounded, and the shield boxes 107, 108 are also grounded by the lower chamber 103. In the past, the inner diameter of the upper chamber 102 was set to be 100 mm to 350 mm in order to correspond to a substrate having a general size (2 inches to 12 inches in diameter).

The first high-frequency power source 110 is a power source for supplying high-frequency power to the coil 104, and is connected to the switching mode power supply 111, the oscillation/amplifier 112, and the radio frequency sensor 113 in the current direction, and is provided with The control circuit 114 is provided in the shielding box 115 formed of an electromagnetic shielding material. The switching mode power supply 111 converts the externally supplied AC 200V power into DC power through the input terminal 115a, and supplies the power to the oscillation/amplifier 112. Then, the oscillation/amplifier 112 converts the DC power into the high frequency power to be supplied to the coil 104, resulting in a high frequency. The frequency power is transmitted to the first integrator 120 by the radio frequency sensor 113. The oscillating/amplifier 112 is controlled by a control loop 114 that is activated by a control signal transmitted via the input terminal 115b. The control loop 114 controls the oscillating according to the detection of the RF sensor 113, the number of cycles and the power of the message feedback. /Amplifier 112, and generates the necessary number of cycles and the high frequency power of the power. The number of cycles of the high-frequency power supplied to the coil 104 in the past is generally set to 13.56 MHz, and the power is appropriately set in the range of 1000 W to 6000 W.

The first integrator 120 is disposed between the first high frequency power source 110 and the coil 104, and is connected to the radio frequency sensor 121, the integrated circuit 122, and the radio frequency sensor 123 according to the current direction, and is provided with a control circuit 124. They are all disposed in the shielding box 125 formed by the electromagnetic shielding material. The integration circuit 122 integrates the impedance of the first high-frequency power source 110 and the impedance corresponding to the load side of the first high-frequency power source 110, that is, a circuit that minimizes the reflected wave intensity of the first high-frequency power source 110, and is transmitted from the input terminal 12. The control circuit 124, which is actuated by the control signal, is controlled. The RF sensor 121 detects the frequency of the high frequency power and the power of the input end. On the other hand, the RF sensor 123 is a detector for detecting the frequency of the high frequency power and the power of the output, and the respective sensors are respectively used. The detection signal is input to the control circuit 124, and the control circuit 124 changes the intensity of the reflected wave to a minimum based on the detected signals, and adjusts the impedance of the integrated circuit 122.

Moreover, the output line of the RF sensor 113 is connected to the input terminal 115c of the shielding box 115, and the input line of the RF sensor 121 is connected to the input terminal 125a of the shielding box 125. The input terminals 115c and 125a are connected via the coaxial cable 116. link. In addition, the output of the radio frequency detector 123 The line connects the output terminal 125c of the shield case 125, and the output terminal 125c is connected to the input terminal 107 provided in the shield case 107 via a coaxial cable 126. The shielding box 115 and the shielding box 125 are connected by the terminals of the coaxial cable 116. Similarly, the shielding box 125 and the shielding box 107 are connected by the terminals of the coaxial cable 126, and as a result, the shielding boxes 115, 125, and The terminals of the coaxial cable 116, 126 are grounded by the shield box 107, the upper chamber 102, and the lower chamber 103, respectively.

The second high-frequency power source 130 supplies high-frequency power to the base 105, and the switching mode power supply 131, the oscillation 7 amplifier 132, the radio frequency sensor 133, and the control circuit 134 are connected in the current direction in the same manner as the first high-frequency power supply 110. They are all installed in the shielding box 135 which is made of electromagnetic shielding material. The switching mode power supply 131, the oscillation/amplifier 132, the radio frequency sensor 133, and the control circuit 134 supply high frequency power to the base 105, and the other is different from the first high frequency power supply 110 except for the range of 50 W to 6000 W. The switching mode power supply 111, the oscillation/amplifier 112, the radio frequency sensor 113, and the control loop 114 correspond to each other and have the same function. Further, the switching mode power supply 131 receives power supply of 200 V from the AC terminal through the input terminal 135a, and the control circuit 134 acquires the control signal via the input terminal 135b.

The second integrator 140 is disposed between the second high-frequency power source 130 and the base 105, and is connected to the radio frequency sensor 141, the integrated circuit 142, and the radio frequency sensor 143 in the same current direction as the first integrator 120. Together with the control circuit 144, it is housed in a shield case 145 composed of an electromagnetic shielding material. The RF sensor 141, the integrated circuit 142, the RF sensor 143, and the control loop 144 correspond to the RF sensor 121, the integrated circuit 122, the RF sensor 123, and the control loop 124 of the first integrator 120. And have the same function. Control loop 144 takes control signals through input terminal 145b.

The input line of the RF sensor 133 is connected to the output terminal of the shielding box 135 135c, on the other hand, the input line of the RF sensor 141 is connected to the input terminal 145a of the shielding box 145, and the output terminal 135c and the input terminal 145a are connected by the coaxial cable 136. Further, the output line of the RF sensor 143 is connected to the output terminal 145c of the shield case 145, which is connected to the input terminal 108a of the shield case 108 by a coaxial cable 146. The coaxial cable 136 connects the shielding box 135 and the shielding box 145. Similarly, the shielding box 145 and the shielding box 108 are connected to each other by a coaxial cable 146. As a result, the shielding boxes 135 and 145 and the coaxial cables 136 and 146 are connected. The terminals are grounded through the shield box 108 and the lower chamber 103, respectively.

In the plasma processing apparatus 100 including the above-described constituent unit, the first high-frequency power source 110 is generated, and the first integrator 120 adjusts the high-frequency power having the smallest reflected wave to the coil 104, and the high-frequency power is supplied to the electric power. The processing gas of the slurry generating space 102a is plasma. On the other hand, after the second high-frequency power source 130 is generated, the second integrator 140 adjusts the high-frequency power having the smallest reflected wave to the base 105, so that the base 105 generates a bias potential. Then, the substrate to be processed loaded on the base 105 is subjected to plasma processing in a biased state. Further, the second integrator 140 supplies the reflected wave of the electric power supplied from the second high-frequency power source 130 to a minimum, and supplies power to the base 105 to generate a bias potential on the base 105. Therefore, the substrate to be processed mounted on the base is subjected to plasma treatment in a bias potential state.

Next, in the plasma processing apparatus 100, the upper chamber 102 and the coil 104 are installed in the shield case 107, and the transmission line of the connection base 105 is shielded by the shield case 108, and the first high frequency power supply 110 and the first integrator 120 are shielded. The second high-frequency power source 130 and the second integrator 140 are shielded in the shield boxes 115, 125, 135, and 145, and the units are connected to each other by coaxial cables 116, 126, 136, and 146, thereby preventing Electromagnetic waves diffuse to the outside.

[First technical literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-53496

However, as in the conventional plasma processing apparatus 100 described above, the upper chamber 102 and the coil 104 are shielded by the shield case 107, and the transmission line of the base 105 is shielded by the shield case 108, and the first high frequency power supply 110 and the first integrator 120 are The second high-frequency power source 130 and the second integrator 140 are respectively shielded by the shield boxes 115, 125, 135, and 145, and the shield boxes 115 and 125 are connected by a coaxial cable 116, and the shield boxes 125 and 107 are coaxial. The cable 126 is connected, and the shielding boxes 135 and 145 are connected by a coaxial cable 136. Similarly, the shielding boxes 145 and 108 are connected by a coaxial cable 146. Therefore, the connecting ends of the coaxial cables 116, 126, 136 and 146 are connected. The contact resistance (reflected wave or loss) generated by the transmission line and the return circuit causes the power supply efficiency to be low, and thus there is a problem that the energy efficiency is lowered.

Further, when the first high frequency power supply 110, the first integrator 120, the second high frequency power supply 130, or the second integrator 140 fails, since these units are included in the structural components of the shield boxes 115, 125, 135, and 145, Therefore, it is convenient to replace the entire constituent unit. However, when the terminals of the coaxial cable lines 116, 126, 136, and 146 are connected, the connection state changes and the contact resistance changes, so the first integration is performed. The device 120 and the second integrator 140 must be adjusted, and thus the reproducibility of the assembly is not good, and it takes a considerable time to supply the high-frequency power to stabilize the entire system. In addition, if the connection state of the coaxial cable lines 116, 126, 136, and 146 is not good, the worst case is that the entire unit is burned. Because of the foregoing, it is necessary to pay more attention when connecting the units, thereby increasing the problem of poor workability.

In addition, the impedance of each of the shielding boxes 115, 125, 135, 145 has a fixed value, so When the first high-frequency power source 110 or the second high-frequency power source 130 is replaced, the impedance on the power source side fluctuates, and when the first integrator 120 or the second integrator 140 is replaced, the impedance on the load side also fluctuates. In the impedance variation, the first integrator 120 or the second integrator 140 needs to be integrated, and in this state, it takes a considerable time to supply the high frequency power to stabilize the entire system.

In addition, when the high-frequency machine is placed in the shielding box, when the high-frequency machine generates a return circuit that transmits high-frequency energy to the shielding box, energy loss occurs due to the propagation of the high-frequency energy source, and the plasma processing device as in the past In the six shielding boxes 107, 108, 115, 125, 135, and 145, each of which accommodates a high-frequency device, so that the shielding boxes 107, 108, 115, 125, 135, and 145 each generate energy loss, so there is also high-frequency power. The problem of poor energy supply efficiency across the system.

The present invention has been developed in view of the above circumstances, and an object thereof is to make it easier to replace a machine for supplying high-frequency power, optimize assembly reproducibility, and improve high-frequency power of high energy efficiency for supplying high-frequency power systems as a whole. A system, and a power supply to a plasma processing apparatus having the system.

The present invention for achieving the above object is a high frequency power system characterized by comprising a load portion for consuming high frequency power, a high frequency power source for supplying high frequency power to the load portion, a connection load portion and a high frequency power source. And an integrator for impedance integration of the load side impedance of the high frequency power supply; and the high frequency power system in which the load portion, the high frequency power supply, and the integrator are installed in a closed space formed by the grounded electromagnetic shielding material.

According to the high-frequency power system of the present invention, the load portion, the high-frequency power source, and the integrator are disposed in a closed space composed of electromagnetic shielding materials, so that it is not necessary to A coaxial cable connection that causes the greatest energy loss between the shielded boxes increases energy efficiency.

When the unit such as the load unit, the high-frequency power supply, and the integrator fails, even if the unit needs to be replaced, there is no need to replace the shield box that houses the unit. Therefore, when the unit is replaced, the shield box needs to be replaced in the past. In the case where the variation of the impedance is small and the failure occurs in the past when the coaxial cable is reconnected, the reproducibility of the assembly is good.

In the past, the load unit, the high-frequency power supply, and the integrator were placed in separate shielding boxes. The internal high-frequency machines in each of the shielding boxes generate high-frequency energy-transmitting return circuits, thus causing energy in each shielding box. The loss causes the overall energy efficiency to be lowered. If the load portion, the high-frequency power source, and the integrator are disposed in a single shielding box according to the present invention, the energy loss caused by the aforementioned reflow circuit can be reduced, thereby improving the overall energy efficiency.

Further, the electromagnetic shielding material constituting the shielding case is not particularly material, and can be used, including conventionally recognized electromagnetic shielding materials such as sheet metal. The high-frequency power referred to in the present invention refers to electric power of a number of cycles of 100 kHz or more.

Further, in the present invention, it is preferable that the high-frequency power source described above supplies a power of 50 W or less to the load portion. When the necessary power is below 50W, the power required to generate the power of the high-frequency power supply is less than AC200V, because the current of DC24V is already 4 amps. According to this configuration, the power source that generates the high-frequency power can use the direct current power. Therefore, the switching mode power supply that is necessary in the past is not required, and the oscillation/amplifier that generates the high-frequency power can be miniaturized, so that the high-frequency power source component can be refined. .

According to the high frequency power system of the present invention, the embodiment features suitable for the plasma processing apparatus and the related plasma processing apparatus include: a chamber having a processing chamber, a processing gas supply unit for supplying a processing gas to the processing chamber, a base mounted in the processing chamber, loading a substrate to be processed, and a high-frequency power system; A plasma generating unit that pulverizes the processing gas in the processing chamber.

Another embodiment of a plasma processing apparatus suitable for use in the high frequency power system of the present invention includes: a processing chamber having a processing chamber, a processing gas supply portion for supplying a processing gas to the processing chamber, and a device a processing chamber, a high-frequency power system, and a plasma generating unit; and a high-frequency power that is different from the supply source of the high-frequency power system, and plasma the processing gas in the processing chamber; The high-frequency power system is a high-frequency power system in which a base station is used as a load portion and high-frequency power is supplied to the base station, and the high-frequency power source and the base station are connected and high. The integrator for integrating the impedance of the frequency power supply load portion; the transmission line for supplying the high frequency power of the base station, the high frequency power supply and the integrator are placed in an enclosed space formed by the grounded electromagnetic shielding material.

Further, another plasma processing apparatus suitable for use in the high frequency power system of the present invention is characterized in that: a processing chamber having a processing chamber, a processing gas supply portion for supplying a processing gas to the processing chamber, and a device a base station for processing the substrate to be processed, and a high frequency power system; The load portion of the high-frequency power system is a plasma generating unit that plasma-processes the processing gas supplied into the processing chamber with high-frequency power, and supplies high-frequency power to the plasma generating unit, thereby integrating and connecting the first high. The first integrator of the impedance of the frequency power source and the plasma generating unit and the impedance of the first high frequency power source load; the second high frequency power source that provides the base station high frequency power using the base as the load unit, and the second integrated power supply a second integrator in which the high-frequency power source and the base are the impedance of the second high-frequency power source load side; the plasma generating unit, the first high-frequency power source, and the first integrator are a component unit, and the high-frequency power is supplied to The transmission line of the base station, the second high-frequency power source, and the second integrator are a unit, and each component unit is installed in an enclosed space that is formed of an electromagnetic shielding material and is grounded.

In the plasma processing apparatus of this embodiment, it is preferable to provide a power of 50 W or less with the first high-frequency power source and the second high-frequency power source. When the first high-frequency power source and the second high-frequency power source are supplied with electric power of 50 W or less, the high-frequency power can be generated by using the direct current power as in the above-described embodiment. Therefore, the switching mode power supply is not required, and the oscillation/amplifier generating the high-frequency power can be small. Therefore, the power system for supplying high-frequency power to the two units of the plasma generating unit and the base can be refined.

Further, in each of the plasma generating apparatuses described above, an embodiment in which a plasma generating portion is provided above a base and an annular coil is disposed outside the processing chamber is also provided.

According to the high-frequency power system of the present invention and the plasma processing apparatus including the high-frequency power system, the load unit (including the plasma generating unit and the base) and the high-frequency power source (including the first high-frequency power source and the The second high-frequency power supply and the integrator (the first integrator and the second integrator) are installed in a shielded box, and do not need to be connected with a coaxial cable in the past. Energy consumption in the shelter box can improve energy efficiency.

Further, when the components such as the load unit, the high-frequency power source, and the integrator are replaced, the shield box does not need to be replaced, so that the failure of the coaxial cable is not connected as in the past, and the reproducibility of the assembly can be optimized. Moreover, the energy loss caused by the reflow circuit can be minimized, and in the sense, energy efficiency can be improved.

Further, when the high-frequency power source supplies a power of 50 W or less to the load portion, DC power can be used as a power source for generating high-frequency power, and a switching mode power supply that has been used in the past is not required, and an oscillation/amplifier that generates high-frequency power can be used. Miniaturization, so the high-frequency power system can be more sophisticated.

1‧‧‧Plastic processing unit

2‧‧‧Processing chamber

3‧‧‧Upper chamber

3a‧‧‧ Plasma generation space

4‧‧‧ lower chamber

4a‧‧‧Processing chamber

5‧‧‧ coil

6‧‧‧Abutment

7‧‧‧Gas Supply Department

10‧‧‧1st high frequency supply unit

11‧‧‧Switch mode power supply

12‧‧‧Oscillation / Amplifier

13‧‧‧RF Sensor

14‧‧‧Integrated loop

15‧‧‧RF Sensor

16‧‧‧Control loop

18‧‧‧Shielding box

20‧‧‧2nd high frequency supply unit

21‧‧‧Switch mode power supply

22‧‧‧Oscillation/Amplifier

23‧‧‧RF Sensor

24‧‧‧Integrated loop

25‧‧‧RF Sensor

26‧‧‧Control loop

28‧‧‧Shielding box

Fig. 1 is a block diagram showing a schematic configuration of a plasma processing apparatus according to a first embodiment of the present invention.

Fig. 2 is a block diagram showing a schematic configuration of a plasma processing apparatus according to a second embodiment of the present invention.

Fig. 3 is an explanatory view showing a configuration of a plasma processing apparatus according to a second embodiment.

Fig. 4 is an explanatory view for explaining a configuration of a plasma processing apparatus according to a second embodiment.

Fig. 5 is an explanatory view for explaining a configuration of a plasma processing apparatus according to a second embodiment.

Fig. 6 is a block diagram showing a schematic configuration of a plasma processing apparatus in the past.

Hereinafter, specific embodiments of the present invention will be described based on the accompanying drawings.

[First Embodiment]

First, a plasma processing apparatus according to a first embodiment of the present invention will be described based on Fig. 1 . Fig. 1 is a block diagram showing a schematic configuration of a plasma processing apparatus of the present embodiment. As a picture As shown in Fig. 1, the plasma processing apparatus 1 of the present embodiment includes a processing chamber 2, a coil 5, a gas supply unit 7, a first high-frequency supply unit 10, and a second high-frequency supply unit 20, and a space for electromagnetic shielding material. Shielding boxes 18, 28. Further, the electromagnetic shielding materials constituting the shielding boxes 18 and 28 are not made of a specific material, and include conventionally recognized electromagnetic shielding materials such as sheet metal. In the present embodiment, the high-frequency power system including the coil 5, the post 6 to be described later, the first high-frequency supply unit 10, the second high-frequency supply unit 20, and the shield boxes 18 and 28 is used.

The processing chamber 2 is composed of an upper chamber 3 and a lower chamber 4, wherein the upper chamber 3 is a plasma generating space 3a, and the lower chamber 4 is connected to the plasma generating space 3a. In the space 4a, the base 6 on which the substrate to be processed is placed is mounted in the processing space 4a, and the coil 5 is wound around the outside of the upper chamber 3, and the lower chamber 4 is grounded. Further, the outer peripheral wall portion of the upper chamber 102 (i.e., the hatched portion in the drawing) is made of an insulating ceramic, and an insulating member 6a is provided between the base 6 and the lower chamber 4, and the insulating member 6 is provided. The electrical insulation between the base 6 and the lower chamber 4 is electrically insulated.

Next, the upper chamber 3, the coil 5, and the first high-frequency supply unit 10 are disposed in the shield case 18, and the second high-frequency supply unit 20 is provided in the shield case 28. Moreover, the shielding box 18 is connected to the lower portion of the upper chamber 3 (the black circle mark portion in FIG. 1), and on the other hand, the shielding box 28 is connected to the lower portion of the lower chamber 4 (the black circle mark portion in FIG. 1), and The lower block of the abutment 6 is shielded. Further, the gas supply unit 7 is installed outside the shield case 18, and passes through a line disposed in the plasma generation space 3a of the processing chamber 2, and supplies the processing gas to the plasma generation space 3a. At the same time, the coil 5 is connected to the shield box 18.

The first high-frequency supply unit 10 supplies high-frequency power to the coil 5, and connects the switching mode power supply 11, the oscillation/amplifier 12, the radio frequency sensor 13, the integration circuit 14, and the radio frequency sensor 15 in a current direction, and is provided with Control loop 16. Switch mode power supply 11 will be external from input terminal 18 The power supplied by the unit 200V is converted into direct current and supplied to the oscillation/amplifier 12, and the oscillation/amplifier 12 converts the direct current to generate high frequency power to be supplied to the coil 5. Therefore, the generated high frequency power is transmitted to the first integrator 14 by the radio frequency sensor 13.

The integration loop 14 integrates the aforementioned oscillation/amplifier 12 with its own loop, the RF sensors 13, 15 and the impedance of the load side of the aforementioned oscillator/amplifier 12, including the coil 5, that is, the minimum reflected wave of the oscillation/amplifier 12 is formed. The current loop is integrated, and the high frequency power integrated by the integrated circuit 14 is supplied to the coil 5 by the RF sensor 15.

The RF sensor 13 detects the frequency and power of the high frequency power output from the oscillating/amplifier 12, transmits a detection signal to the control circuit 16, and the RF sensor 15 detects the frequency of the high frequency power output by the integrated circuit 14. The number and power are transmitted to the control loop 16 for detection signals.

Then, based on the detection signal of the RF sensor 13, the control circuit 16 uses the frequency and power of the high frequency power generated by the oscillation/amplifier 12 as a control signal, and inputs a set value through the input terminal 18b to oscillate/ The amplifier 12 performs feedback control. Moreover, based on the detection signals of the RF sensors 13 and 15, the control circuit 16 controls the operation of the integrated circuit 14 to minimize the reflected wave according to the control signal input from the input terminal 18b.

Further, the high-frequency power supplied from the first high-frequency power supply unit 10 to the coil 5 is 13.56 MHz as in the past, and the power range is 1000 W to 6000 W.

The second high-frequency supply unit 20 supplies high-frequency power to the base unit 6, and connects the switching mode power supply 21, the oscillation/amplifier 22, the radio frequency sensor 23, the integrated circuit 24, and the radio frequency sensor 25 in a current direction, and is provided. There is a control loop 26. The switching mode power supply 21, the oscillation/amplifier 22, the radio frequency sensor 23, the integration circuit 24, the radio frequency sensor 25, and the control circuit 26, in addition to the high frequency power range of the supply base 6 is 50W~6000W, corresponding to the 1 switching mode power supply 11 of the high frequency supply unit 10, The oscillation/amplifier 12, the RF sensor 13, the integrated circuit 14, the RF sensor 15, and the control circuit 16 all have the same function, and thus the description thereof is omitted. Further, the switching mode power supply 21 receives an externally supplied 200 V AC power via the input terminal 28a, and inputs a control signal to the control circuit 26 via the input terminal 28b. Further, a transmission line to which the radio frequency sensor 25 is connected to the base 6 is disposed in the shield case 28.

According to the embodiment of the plasma processing apparatus 1 configured as described above, the high-frequency power generated by the oscillation/amplifier 12 of the first high-frequency supply unit 10 is adjusted by the integration circuit 14 to minimize the reflected wave of the high-frequency power, and then The high-frequency power is supplied to the coil 5, and the processing gas supplied from the gas supply unit 7 is plasma-generated by the high-frequency power in the generation space 3a. On the other hand, the high-frequency power generated by the oscillation/amplifier 22 of the second high-frequency supply unit 20 is minimized by the adjustment of the integrated circuit 24, and then supplied to the base 6 again. The base 6 generates a bias potential. Therefore, the substrate to be processed mounted on the base 6 is subjected to plasma treatment under a strong bias potential.

Next, in the plasma processing apparatus 1, the upper chamber 3 including the components of the high-frequency power, the coil 5, and the first high-frequency supply unit 10 are placed inside the shielded box 18 that is grounded, and the second high frequency is also provided. Since the supply unit 20 is installed inside the shielded box 28 that has been grounded, it is not necessary to connect the respective shielded boxes with a coaxial cable that generates energy loss as in the past, so that energy efficiency can be improved.

In addition, when the components of the upper chamber 3, the coil 5, and the first high-frequency supply unit 10 and the second high-frequency supply unit 20 need to be replaced, it is not necessary to replace the shield boxes 18 and 28 that house these constituent units. When the above-described constituent unit is replaced, when the shield box is replaced in the past, not only the impedance variation is small, but also the case where the failure occurs due to the reconnection of the coaxial cable in the past is caused, and the assembly reproducibility is optimized.

Further, the first high-frequency supply unit and the second high-frequency supply unit are installed in the shield boxes 18 and 28, and the first high-frequency supply unit and the second high-frequency supply unit have the same high performance as in the past. frequency In contrast to the power source 110 and the first integrator 120, the first high frequency power source 130, and the first integrator 140, the radio frequency sensors 121 and 141 can be omitted from the constituent units, and in the past, the respective control loops 114 are formed. In the present embodiment, the control circuit 16 is integrated. Similarly, the past control circuits 134 and 144 are integrated into the control circuit 26 in this embodiment, so that the overall structure is reduced, and as a result, the shield case 18 can be obtained. The size of 28 is more compact. Therefore, the high-frequency energy loss caused by the current loop formed in the shielding boxes 18 and 28 is also less than in the past, and the energy efficiency of the overall device can be improved.

[Second embodiment]

Next, the plasma processing apparatus according to the second embodiment of the present invention will be described based on Figs. 2 and 3 . Further, the plasma processing apparatus 1 of the present embodiment has the same constituent elements as those of the plasma processing apparatus 1 of the first embodiment, and the same reference numerals are used, and thus detailed description thereof will be omitted.

The plasma processing apparatus 1 of the present embodiment has a substrate having a diameter of 1 inch or less as a processing target, and as shown in FIG. 2, has a processing chamber 2, a coil 5, a gas supply unit 7, and a first high-frequency supply unit. 10. The second high frequency supply unit 20 and the shield boxes 18 and 28.

Since the processing chamber 2 is treated with a substrate having a diameter of 1 inch or less, the overall device can be downsized. Specifically, as shown in FIG. 3, the plasma generating space 3a is set to have an inner diameter of D10 mm or more and 60 mm or less. 2 and 3, reference numeral 3 denotes an upper chamber, reference numeral 4 denotes a lower chamber, reference numeral 4a denotes a processing space, reference numeral 6 denotes a base, and reference numeral 6a denotes an insulating member.

In addition, the first high-frequency supply unit 10 omits the switching mode power supply 11 of the first high-frequency supply unit 10 in the first embodiment, and supplies 24V DC power to the oscillation/amplifier 12 from the outside through the input terminal 18a, and supplies the cycle. The frequency is 40 MHz or more and 100 MHz or less, and the high frequency power of 2 W or more and 50 W or less is supplied to the coil 5.

In addition, the second high-frequency supply unit 20 omits the switching mode power supply 21 of the second high-frequency supply unit 20 in the first embodiment, and supplies 24V DC power to the oscillation/amplifier 22 from the outside through the input terminal 28a, and supplies the number of cycles. 100 kHz or higher, high-frequency power of 50 W or less.

As described above, in the past, the plasma generation space of the processing chamber is generally recognized to have an inner diameter of 100 to 350 mm, and the frequency of the high frequency power supplied to the coil for generating the plasma is 13.56 MHz, and the electric power is 1000 W to 6000 W. In order to generate such high frequency power, an AC200V power supply is required.

However, according to the study of the present invention, when processing a substrate having a diameter of 1 inch or less, such high frequency power is not required, and the inner diameter of the processing chamber forming the plasma generating space is as shown in FIG. In the case of 10 mm or more and 60 mm or less, the most suitable size is used. In this case, as shown in FIG. 4 and FIG. 5, the high-frequency power having a frequency of 0 MHz or more and 100 MHz or less and a power of 2 W or more is supplied to the coil 5, whereby the processing gas can be used. The plasma is pulverized while maintaining the stable generated plasma, so that the substrate can be plasma treated.

4 is a plasma etching apparatus 1 in which the inner diameter D of the upper chamber 3 is 50 mm, the inner diameter of the coil 5 is 60 mm, and the number of turns of the coil 5 is 1, the processing gas Ar is transferred to the gas supply unit 7 to In the plasma generation space 3a, the pressure in the processing chamber 2 is 5P, the high-frequency power supplied to the coil 5 is fixed at 50 W, and when the number of cycles of the high-frequency power supplied to the coil 5 changes, the number of cycles is The experimental results of the plasma state are confirmed. As can be seen from FIG. 3, when the number of cycles is 40.68 MHz, 80 MHz, and 100 MHz, that is, when the number of cycles is 40 MHz or more and 100 MHz or less, plasma is generated in the plasma generating space 3a (ignition), and the generated plasma maintains a stable diffusion state ( Diffusion into the overall plasma generation space).

Figure 5 shows the minimum of high frequency power to confirm the stable state of the plasma. The value is set such that the number of cycles of the high-frequency power of the supply coil 5 is 100 MHz, the pressure in the processing chamber 2 is 5 Pa, and the flow rate of the processing gas is 3 sccm, and the inner diameter D of the upper chamber 3 and the inner diameter of the coil 5 are varied. The result of measuring the magnitude of the high-frequency power in the stable plasma state under the condition of the number of coils of the coil 5 and the type of the processing gas,

(a) the case where the inner diameter D is 20 mm, the inner diameter of the coil 5 is 30 mm, and the number of coils of the coil 5 is 1.

(b) the case where the inner diameter D is 20 mm, the inner diameter of the coil 5 is 30 mm, and the number of coils of the coil 5 is 2.

(c) the case where the inner diameter D is 30 mm, the inner diameter of the coil 5 is 36 mm, and the number of coils of the coil 5 is 1.

As is clear from the results of FIG. 5, when the high frequency power is greater than 2 W, the plasma state can be maintained. Further, when the electric power supplied to the coil 5 exceeds 50 W, excessive energy is consumed instead, and therefore the electric power supplied to the coil 5 is optimally 50 W or less.

According to the above background, the plasma processing apparatus 1 of the present embodiment is sufficient to supply the high frequency electric power of 50 W or less to the coil by generating the plasma, so that the electric power of the voltage of 24 V can be directly supplied from the direct current power source to the oscillation/amplifier 12. Also in the second high-frequency supply unit 20, since the high-frequency power supplied to the base 6 is low electric power of 50 W or less, the electric power of 24 V can be directly supplied from the DC power supply to the oscillation/large unit 22. Moreover, 24V DC power is selected because this power supply is the most commonly used voltage for other control machines, and is easy to obtain and inexpensive, and of course, other voltage DC power sources can be used.

Therefore, since the direct current power can be directly supplied to the oscillation/amplifier 12 of the first high-frequency power 10 and the oscillation/amplifier 22 of the first high-frequency power 20 in the plasma processing apparatus 1 of the present embodiment, the first embodiment is not required. By switching the mode power supplies 11 and 21, the first high frequency supply unit 10 and the second high can be made high. The frequency supply unit 20 is downsized. Thus the oscillating/amplifiers 12, 22 can be combined into a single device (crystal).

Therefore, the first high-frequency supply unit 10 and the second high-frequency supply unit 20 can be installed above the processing chamber 2, and the overall shape of the plasma processing apparatus 1 can be simplified into a longitudinal rectangular parallelepiped, so that the plasma treatment can be reduced. The display area of the device 1.

The specific embodiments described above are illustrative only and not limiting.

For example, in the first embodiment and the second embodiment described above, the second high-frequency supply units 20 and 20' are provided to supply high-frequency power to the bases 6, 6', but the bases 6, 6' are not required. At the time of the bias potential, it is not necessary to provide the second high-frequency supply units 20 and 20'.

Further, in the first embodiment and the second embodiment described above, the first high-frequency supply unit 10 (10'), the coil 5, and the upper chamber 3 are provided in the shield case 18, and the second high-frequency supply unit is provided. 20 (20') is provided in the shield case 28, but the first high-frequency supply unit 10 (10'), the coil 5, the upper chamber 3, and the second high-frequency supply unit 20 (20') are placed without limitation. The structure in a shielded box is also possible.

In addition, the effect surface may be somewhat unsatisfactory. However, if the first high-frequency supply unit 10 (10'), the coil 5, and the upper chamber 3 are regarded as one unit group, the second high-frequency supply unit 20 (20' As a unit group, any unit group is set in a single shielding box, and another unit group can also be constructed using the composition shown in FIG. 6.

Alternatively, in the first embodiment and the second embodiment, the so-called inductively coupled plasma (ICP) processing apparatuses 1, 1' having the coils 5, 5' are used, but not limited thereto, and have parallel plates in the present invention. The capacitive coupling plasma (CCP) processing device of the electrode can be used as a plasma processing device and can be embodied by using high frequency power.

And the substrate to be processed is also non-limiting, and the substrate used in the embodiment The material may be tantalum, tantalum carbide, sapphire, compound semiconductor, glass, resin, or the like.

In view of the above, the high frequency power system of the present invention is suitable for use in a plasma processing apparatus, but is not limited to other apparatus that use high frequency power.

1‧‧‧Plastic processing unit

2‧‧‧Processing chamber

3‧‧‧Upper chamber

3a‧‧‧ Plasma generation space

4‧‧‧ lower chamber

4a‧‧‧Processing chamber

5‧‧‧ coil

6‧‧‧Abutment

7‧‧‧Gas Supply Department

10‧‧‧1st high frequency supply unit

11‧‧‧Switch mode power supply

12‧‧‧Oscillation / Amplifier

13‧‧‧RF Sensor

14‧‧‧Integrated loop

15‧‧‧RF Sensor

16‧‧‧Control loop

18‧‧‧Shielding box

20‧‧‧2nd high frequency supply unit

21‧‧‧Switch mode power supply

22‧‧‧Oscillation/Amplifier

23‧‧‧RF Sensor

24‧‧‧Integrated loop

25‧‧‧RF Sensor

26‧‧‧Control loop

28‧‧‧Shielding box

Claims (7)

The high-frequency power system of the present invention is characterized in that a high-frequency power source that connects and supplies high-frequency power to a load portion that consumes high-frequency power is used; and an integrator integrates high-frequency power source load side impedance and high-frequency power source impedance high-frequency power The system is configured to place the load portion, the high frequency power supply, and the integrator in a separate enclosed space formed using a grounded electromagnetic shielding material. As described in Patent Application No. 1, the high-frequency power supply supplied to the load portion of the high-frequency power system has a power structure of 50 W or less. A plasma processing apparatus comprising the high frequency power system according to claims 1 and 2, characterized in that: a processing chamber including a processing chamber, a processing gas supply unit for supplying a processing gas to the processing chamber, and a processing gas supply unit In the processing chamber, a base on which the substrate to be processed is placed, and the load portion of the device is a plasma generating portion that plasma-treats the processing gas in the processing chamber with high-frequency power. A plasma processing apparatus characterized by a processing chamber including a processing chamber, a processing gas supply unit for supplying a processing gas to the processing chamber, and a base disposed in the processing chamber and having a substrate to be processed, and having a patent application The high-frequency power system described in the scopes 1 and 2; the high-frequency power obtained by using the other source of the high-frequency power system of the patent application range 3, and the plasma generating unit that plasma-processes the processing gas in the processing chamber The high-frequency power system uses a base as a load portion, and connects the base station and the high-frequency power supply for supplying power to the base station, and is provided with an integrator to adjust the impedance of the load side of the high-frequency power supply; The transmission line for supplying high-frequency power to the base, the high-frequency power supply, and the integrator are placed in a single enclosed space formed by the grounded electromagnetic shielding material. A plasma processing apparatus characterized by a processing chamber including a processing chamber, a processing gas supply unit for supplying a processing gas to the processing chamber, and a base disposed in the processing chamber and loaded with a substrate to be processed, as in the application The high-frequency power system according to the first aspect of the invention, wherein the plasma generating unit that is plasma-treated by the high-frequency power in the processing chamber is the load portion of the high-frequency power system, and supplies the high-frequency power to the first plasma generating unit. The high-frequency power source is connected to the plasma generating unit, and is provided with a first integrator that can integrate the first high-frequency power source load side and the first high-frequency power source impedance, and the second power supply is used as the load unit. The high-frequency power source is connected to the base, and the impedance of the second high-frequency power source load side and the second high-frequency power source is integrated by the second integrator; the plasma generating unit, the first high-frequency power source, and the first integrator are one The constituent unit, the transmission line for supplying power to the base station, the second high-frequency power source, and the second integrator are another constituent unit, and each of the constituent units is individually disposed in a single closed space formed by the grounded electromagnetic shielding material, or 2 groups Bit co-located in a single enclosed space composed of an electromagnetic shielding material has been grounded. A plasma processing apparatus according to claim 5, wherein the first high-frequency power source and the second high-frequency power source are supplied with a power structure of 50 W or less. A plasma processing apparatus according to any one of claims 3 to 3, wherein the plasma generating unit is disposed above the base and is provided with an annular coil on the outside of the processing chamber.