TW201537645A - Package on package structure and manufacturing method thereof - Google Patents

Abstract

This invention provides a package on package structure, comprising: a package substrate having a plurality of first electrical contact pads and is provided with a semiconductor element, and an electronic component having a plurality of second electrical contact pads, the second electrical contact pads are provided with conductive elements, the conductive element is constituted by an insulating block and a conductive material that covers the insulating block, and the conductive elements correspondingly combine the first electrical contact pads, to make the electronic component stack on the package substrate, so as to be conducive to the stack operation by the design of the insulating block. This invention further provides a manufacturing method of the package on package structure.

Description

Package stack structure and its preparation method

The invention relates to a package structure, in particular to a package stack structure and a preparation method thereof.

With the rapid development of portable electronic products in recent years, various related products are gradually moving towards high density, high performance, light, thin, short, and small, and various package on package (PoP) Cooperate with innovation, in order to meet the requirements of light, short and high density.

As shown in FIG. 1, it is a schematic cross-sectional view of a conventional package stacking device 1. As shown in FIG. 1, the package stacking device 1 includes two stacked package structures 1a and another package structure 1b.

The package structure 1a includes a first substrate 11 having opposite first and second surfaces 11a, 11b, a first electronic component 10 overlying the first substrate 11, and an electrical contact disposed on the first surface 11a. a pad 111, a solder material formed on the first substrate 11 to cover the first encapsulant 13 of the first electronic component 10, and an electrical contact pad 111 formed in the opening 130 of the first encapsulant 13 114, and a ball pad 112 disposed on the second surface 11b for bonding the solder balls 14.

The other package structure 1b includes a second substrate 12, second electronic components 15a, 15b bonded to the second substrate 12 in a wire bonding manner, and formed on the second substrate 12 to cover the second electronic component 15a. The second encapsulant 16 of the 15b is stacked on the second substrate 12 by the solder material 114 and electrically connected to the electrical contact pad 111 of the first substrate 11.

However, in the conventional package stacking device 1, since the first and second substrates 11 and 12 are supported by the solder material 114 as electrical components, the contacts (ie, I/O) of the electronic product are used. As the number of packages is constant, the spacing between the solder materials 114 needs to be reduced, resulting in a bridge phenomenon, resulting in low product yield and reliability. Problems such as good results make it impossible to use finer pitch products.

Moreover, since the tolerance of the volume and height of the solder material 114 after reflowing is large, that is, the dimensional variation is difficult to control, not only the contact is prone to defects (for example, in the case of reflow, the solder material 114 first becomes soft collapsed). In the state, while the weight of the second substrate 12 is received, the solder material 114 is easily collapsed and then bridged adjacent to the solder material 114, resulting in poor electrical connection quality, and the solder material 114 is arranged in a grid. A grid array is prone to poor coplanarity, resulting in an unbalanced bond stress, which tends to cause tilting between the two package structures and even a problem of contact offset.

Moreover, the two package structures are supported by the solder material 114 only, and the first and second substrates 11, 12 are likely to warp due to the excessive gap d between the two package structures.

Further, since the metal conductive ball formed of the solder material 114 is weak in shock absorbing ability, when the solder material 114 is subjected to vibration, it is liable to be displaced and a short circuit problem occurs.

Therefore, how to overcome various problems in the prior art has become a problem that is currently being solved.

The present invention provides a package stack structure, comprising: a package substrate having a plurality of first electrical contact pads; at least one semiconductor component disposed on the package substrate; and an electronic device And having a plurality of second electrical contact pads, and each of the second electrical contact pads is provided with a conductive element, and the conductive elements are correspondingly coupled to the first electrical contact pads, so that the electronic device is stacked on the On the package substrate, the conductive element is composed of an insulating block and a conductive material covering the insulating block.

The invention provides a method for fabricating a package stack structure, comprising: providing a package substrate having a plurality of first electrical contact pads and an electronic device having a plurality of second electrical contact pads, and disposing at least one semiconductor component and the package On the substrate, wherein the second electrical contact pad is provided with a conductive element, and the conductive element is composed of an insulating block and a conductive material covering the insulating block; and correspondingly combining the conductive elements to the first electric The contact pads are stacked on the package substrate.

In the foregoing package stack structure and the manufacturing method thereof, the electronic device is electrically connected to the package substrate by the conductive elements.

In the foregoing package stack structure and method of manufacturing the same, the insulating block is plastic The ball and the conductive material is a solder material.

In the foregoing package stack structure and method of manufacturing the same, the electronic device is another package substrate or a semiconductor element.

In the foregoing package stack structure and method of fabricating the same, the semiconductor component is located between the electronic device and the package substrate. The method further includes forming a primer between the package substrate and the semiconductor element.

In addition, in the foregoing package stack structure and the manufacturing method thereof, after the corresponding conductive elements and the first electrical contact pads are combined, a package material is formed between the electronic device and the package substrate to cover the package Some conductive elements.

It can be seen from the above that the package stack structure of the present invention and the manufacturing method thereof are designed by the insulating block to facilitate the stacking operation, and the size variation of the conductive element is easy to control, so that the tilting connection between the stacked structures can be overcome and Contact offset problem.

Furthermore, the electronic device and the package substrate are not only supported by the conductive component, but also the gap between the electronic device and the package substrate is filled by the package adhesive, so that the electronic device and the package can be avoided. The substrate is warped.

Moreover, the insulating block has a good shock absorbing capability, so that when the conductive member is subjected to vibration, it does not shift, and the short circuit problem can be avoided as compared with the conventional metal conductive ball.

1‧‧‧Package stacking device

1a, 1b‧‧‧ package structure

10‧‧‧First electronic components

11‧‧‧First substrate

11a, 21a‧‧‧ first surface

11b, 21b‧‧‧ second surface

111‧‧‧Electrical contact pads

112,212‧‧‧Ball mat

114‧‧‧ Solder

12‧‧‧second substrate

13‧‧‧First encapsulant

130,213a, 223a‧‧‧ openings

14,24‧‧‧ solder balls

15a, 15b‧‧‧Second electronic components

16‧‧‧Second encapsulant

2,2’,2”‧‧‧Package stack structure

20‧‧‧Semiconductor components

200‧‧‧electrode pads

200a‧‧‧ solder bumps

21‧‧‧Package substrate

211a, 221a‧‧ ‧ pads

211b‧‧‧First electrical contact pad

213,223‧‧‧Insulating protective layer

22,32‧‧‧Electronic devices

22a‧‧‧ third surface

22b‧‧‧Fourth surface

22c‧‧‧Substrate

221b, 321‧‧‧Second electrical contact pads

23‧‧‧Conductive components

230‧‧‧Insulation block

231‧‧‧Electrical materials

25‧‧‧Package

26‧‧‧Bottom glue

32a‧‧‧Action surface

32b‧‧‧Non-active surface

D‧‧‧ gap

1 is a schematic cross-sectional view showing a method of manufacturing a conventional package stacking device; 2A to 2D are schematic cross-sectional views showing the manufacturing method of the package stack structure of the present invention; wherein the 2C' picture is another aspect of the 2Cth picture, and the 2D' and 2D" pictures are respectively Different aspects of the 2D map.

The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.

It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. At the same time, the terms "upper", "lower", "first", "second", "third", "fourth", and "one" as used in this specification are also for convenience only. It is to be understood that the scope of the invention is not limited by the scope of the invention.

2A to 2D are schematic cross-sectional views showing the manufacturing method of the package stack structure 2 of the present invention.

As shown in FIG. 2A, a package substrate 21 and an electronic device 22 provided with a plurality of conductive elements 23 are provided.

In this embodiment, the package substrate 21 has a first surface 21a and a second surface 21b opposite thereto, and the first surface 21a has a plurality of pads 211a thereon. And a plurality of first electrical contact pads 211b, wherein the second surface 21b has a plurality of ball pads 212, and has an insulating protective layer such as a solder resist layer on the first and second surfaces 21a, 21b of the package substrate 21. 213. The insulating protection layer 213 is formed with a plurality of openings 213a for exposing the pads 211a, the first electrical contact pads 211b, and the ball pad 212 by the openings 213a.

Further, a semiconductor device 20 is disposed on the exposed surface of the pad 211a by solder bumps 200a, that is, the electrode pads 200 of the semiconductor device 20 are electrically connected to the package substrate 21 in a flip chip manner. Wherein, the semiconductor component 20 is an active component or a passive component, and a plurality of semiconductor components 20 may be used, and may be selected from an active component, a passive component or a combination thereof, such as a wafer, and the passive component is, for example, : Resistance, capacitance and inductance.

Moreover, the electronic device 22 is a package substrate configuration. Specifically, a substrate 22c having an opposite third surface 22a and a fourth surface 22b is provided. The third surface 22a has a plurality of pads 221a thereon, and the fourth surface 22b has a plurality of second electrical contact pads 221b thereon. Further, the third and fourth surfaces 22a, 22b of the substrate 22c have an insulating protective layer 223 such as a solder resist layer, and the insulating protective layer 223 is formed with a plurality of openings 223a for exposing the openings 223a. The pads 221a and the second electrical contact pads 221b.

In addition, the conductive member 23 is formed on the exposed surface of the second electrical contact pad 221b of the substrate 22c, and the conductive member 23 has an insulating block 230 and a conductive material 231 covering the insulating block 230. 230 is a plastic ball, and the conductive material 231 is a solder material such as nickel tin, tin lead or tin silver, but is not limited thereto.

As shown in FIG. 2B, the conductive elements 23 are combined with the first An electrical contact pad 211b, and the conductive material 231 is reflowed, the electronic device 22 is stacked on the package substrate 21, and the semiconductor component 20 is located between the electronic device 22 and the package substrate 21.

In this embodiment, the electronic device 22 is electrically connected to the package substrate 21 by the conductive elements 23 .

As shown in FIG. 2C, a first surface 21a of the package substrate 21 (ie, the insulating protective layer 213 thereon) is formed between the first surface 21a of the package substrate 21 and the fourth surface 22b of the electronic device 22 (ie, the insulating protective layer 223 thereon). The package material 25 covers the conductive elements 23 and the semiconductor element 20.

In another embodiment, as shown in FIG. 2C', a primer 26 may be formed between the package substrate 21 and the semiconductor element 20 to form the package 25.

As shown in FIG. 2D, the solder balls 24 are bonded to the exposed surface of the ball pad 212 of the package substrate 21.

In another embodiment, as shown in FIG. 2D', the electronic device 32 can also be a semiconductor component, such as an active component of a chip, or a passive component such as a resistor, a capacitor, or an inductor, so that the electronic device 32 has a relative The active surface 32a and the non-active surface 32b have a plurality of second electrical contact pads 321 on the active surface 32a, and the conductive elements 23 are formed on the second electrical contact pads 321 correspondingly.

Furthermore, in other embodiments, as shown in FIG. 2D, the semiconductor device 20 may not be disposed on the package substrate 21.

In the manufacturing method of the present invention, the design of the insulating block 230 is used to reduce the amount of solder material used, so that the fusion joint can be reduced during reflow to avoid occurrence. The bridging phenomenon improves the yield of the product and meets the requirements of fine pitch.

Moreover, since the tolerance of the volume and height of the insulating block 230 during reflow is small (almost constant), that is, the dimensional variation of the conductive member 23 is easily controlled, the contact is less likely to cause defects, and the electrical connection quality is effectively improved. And the coplanarity of the grid array in which the conductive elements 23 are arranged is good to easily control the height of the product, and the package substrate 21 and the electronic devices 22, 32 are not inclined. Pick up.

Moreover, the package substrate 21 and the electronic device 22, 32 are not only supported by the conductive member 23, but the package 25 is filled with the package substrate 21 and the electronic device by, for example, molding. The gap between the 22, so that the package substrate 21 and the electronic device 22 can be prevented from warping.

In addition, the insulating block 230 has a good shock absorbing capability, so that when the conductive member 23 is subjected to vibration, it does not shift, and the short circuit problem can be avoided.

The present invention further provides a package stack structure 2, 2', 2" comprising: a phase stack of a package substrate 21, at least one semiconductor component 20, and an electronic device 22,32.

The package substrate 21 has a plurality of first electrical contact pads 211b.

The semiconductor device 20 is disposed on the package substrate 21.

The electronic device 22, 32 is another package substrate or semiconductor component having a plurality of second electrical contact pads 221b, 321 , and the second electrical contact pads 221b, 321 are provided with a conductive element 23, the conductive Element 23 has The insulating block 230 and the conductive material 231 covering the insulating block 230, and the conductive elements 23 are coupled to the first electrical contact pads 211b, so that the electronic devices 22, 32 are stacked on the package substrate 21, and The package substrate 21 and the electronic devices 22, 32 are electrically connected by the conductive elements 23.

In one embodiment, the insulating block 230 is a plastic ball, and the conductive material 231 is a solder material.

In one embodiment, the semiconductor component 20 is located between the electronic device 22, 32 and the package substrate 21. Further, a primer 26 formed between the package substrate 21 and the semiconductor element 20 is included.

In one embodiment, the package stack structure 2, 2', 2" includes a package 25 formed between the electronic device 22, 32 and the package substrate 21, which encapsulates the conductive elements 23.

In summary, the package stack structure of the present invention and the manufacturing method thereof are mainly designed by the insulating block to facilitate the stacking operation, and the size variation of the conductive component is easy to control, so the electronic device and the package substrate are It is easy to be vertically connected, and it is advantageous to fix the contact points of the conductive element without bridging and improving the yield of the product.

Moreover, the insulating block has a good shock absorbing capability, so that when the conductive member is subjected to vibration, it does not shift, and the yield of the product can be improved.

The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.

2‧‧‧Package stack structure

20‧‧‧Semiconductor components

21‧‧‧Package substrate

211b‧‧‧First electrical contact pad

212‧‧‧Ball mat

22‧‧‧Electronic devices

221b‧‧‧Second electrical contact pads

23‧‧‧Conductive components

230‧‧‧Insulation block

231‧‧‧Electrical materials

24‧‧‧ solder balls

25‧‧‧Package

Claims (16)

A package stack structure includes: a package substrate having a plurality of first electrical contact pads; at least one semiconductor component disposed on the package substrate; and an electronic device having a plurality of second electrical contact pads, and each The second electrical contact pad is provided with a conductive component, and the conductive component is correspondingly coupled to the first electrical contact pads, so that the electronic device is stacked on the package substrate, wherein the conductive component is insulated by the insulating block. It is composed of a conductive material covering the insulating block. The package stack structure of claim 1, wherein the electronic device is electrically connected to the package substrate by the conductive elements. The package stack structure of claim 1, wherein the insulating block is a plastic ball. The package stack structure of claim 1, wherein the conductive material is a solder material. The package stack structure of claim 1, wherein the electronic device is another package substrate or a semiconductor element. The package stack structure of claim 1, wherein the semiconductor component is located between the electronic device and the package substrate. The package stack structure according to claim 1, further comprising a primer formed between the package substrate and the semiconductor element. The package stack structure according to claim 1, further comprising a package formed between the electronic device and the package substrate for covering the conductive elements. A method for manufacturing a package stack structure includes: providing a package substrate having a plurality of first electrical contact pads and an electronic device having a plurality of second electrical contact pads, and disposing at least one semiconductor component on the package substrate, wherein The second electrical contact pad is provided with a conductive element, and the conductive element is composed of an insulating block and a conductive material covering the insulating block; and correspondingly connecting the conductive elements to the first electrical contact pads, The electronic device is stacked on the package substrate. The method of manufacturing a package stack structure according to claim 9, wherein the electronic device is electrically connected to the package substrate by the conductive elements. The method of manufacturing a package stack structure according to claim 9, wherein the insulating block is a plastic ball. The method of manufacturing a package stack structure according to claim 9, wherein the conductive material is a solder material. The method of manufacturing a package stack structure according to claim 9, wherein the electronic device is another package substrate or a semiconductor element. The method of fabricating a package stack structure according to claim 9, wherein the semiconductor component is located between the electronic device and the package substrate. The method of fabricating a package stack structure according to claim 9 further comprising forming a primer between the package substrate and the semiconductor element. The method for manufacturing a package stack structure according to claim 9 is further included in the corresponding combination of the conductive elements and the first electrical contacts. After the pad, a package material is formed between the electronic device and the package substrate to encapsulate the conductive elements.