TW201535653A - Metal interconnect structure and method of fabricating the same - Google Patents

Abstract

A metal interconnect structure is provided, which includes a substrate, a dielectric layer, a conductive damascene, a first barrier layer, and a second barrier layer. The dielectric layer is on the substrate. The dielectric layer has an opening. The conductive damascene is located in the opening. A top surface of the conductive damascene is lower than a top surface of the dielectric layer. The first barrier layer is located between the dielectric layer and the conductive damascene, and between the substrate and the conductive damascene. The second barrier layer is located in the opening and covers the top surface of the conductive damascene.

Description

Metal interconnect structure and manufacturing method thereof

The present invention relates to a metal interconnect structure and a method of fabricating the same.

With the development of the semiconductor industry, when the accumulation of integrated circuits increases, the surface of the wafer cannot provide sufficient area to make the required metal interconnects, and is increased in order to reduce the alloyed oxygen half (MOS) transistors. The need for interconnects, the design of two or more metal layers, has gradually become the way that many integrated circuits must be used. In particular, some more complex products, such as microprocessors, even require four or five layers of metal to complete the connection between the various components in the microprocessor. The "plug" plays an important role in the connection between different metal layers.

In the process of forming a metal interconnect, after the metal wire is formed by damascene, in the subsequent process of forming the via, the metal wire is exposed to the air to cause oxidation or corrosion, or in a subsequent high temperature process. Deformation or loss.

Embodiments of the present invention provide a metal interconnect structure that provides better reliability and stability.

The embodiment of the invention further provides a method for manufacturing a metal interconnect structure, which can be integrated with an existing process, and the fabricated metal interconnect structure has better reliability and stability.

The invention provides a metal interconnect structure comprising a substrate, a dielectric layer, a conductor damascene structure, a first barrier layer and a second barrier layer. The dielectric layer is on the substrate. The dielectric layer has an opening. The conductor damascene structure is located in the opening. The top surface of the conductor damascene structure is lower than the top surface of the dielectric layer. The first barrier layer is between the dielectric layer and the conductor damascene structure and between the substrate and the conductor damascene structure. The second barrier layer is located in the opening to cover a top surface of the conductor damascene structure.

According to an embodiment of the invention, the material of the first barrier layer and the second barrier layer comprises platinum, tantalum, titanium, titanium nitride, tantalum, tantalum nitride, tungsten, tungsten nitride or a combination thereof. .

According to an embodiment of the invention, the metal interconnect structure further includes a conductor structure covering the second barrier layer and electrically connecting the conductor damascene structure.

According to an embodiment of the invention, the conductor structure comprises a conductor plug.

According to an embodiment of the invention, the conductor structure comprises a wire.

The present invention further provides a method of fabricating a metal interconnect structure. An opening is formed in the dielectric layer, and a first barrier layer is formed in the opening. Thereafter, a conductor damascene structure is formed on the first barrier layer in the opening. Next, a second barrier layer is formed in the opening, wherein the second barrier layer covers a top surface of the conductor damascene structure.

According to an embodiment of the invention, the first barrier layer and the second barrier layer comprise platinum, tantalum, titanium, titanium nitride, tantalum, tantalum nitride, tungsten, tungsten nitride or a combination thereof.

According to an embodiment of the invention, the method for forming the conductor damascene structure includes forming a conductor layer to cover the dielectric layer and filling the opening, and then removing a portion of the conductor layer, The top surface of the formed conductor damascene structure is formed to be lower than the top surface of the dielectric layer.

According to an embodiment of the invention, the method for fabricating the metal interconnect structure further includes forming a wire covering the dielectric layer and the second barrier layer to electrically connect the conductor damascene structure.

According to an embodiment of the invention, the method for fabricating the metal interconnect structure further includes forming a conductor plug on the second barrier layer to electrically connect the conductor damascene structure.

Based on the above, the conductor damascene structure in the metal interconnect structure of the embodiment of the present invention is completely covered by the barrier layer, which not only avoids diffusion and migration of metal atoms, but also prevents oxidation, corrosion, deformation or loss, and thus can be increased. The stability and reliability of the metal interconnect structure.

In addition, the process of the metal interconnect structure of the embodiment of the present invention can be integrated with the existing process, and the stability and reliability of the metal interconnect structure can be increased without adding too many process steps.

The above described features and advantages of the invention will be apparent from the following description.

1A through 1G are cross-sectional views showing the steps of a method of fabricating a metal interconnect structure in accordance with an embodiment of the present invention. 2 is a cross-sectional view showing a metal interconnect structure in accordance with another embodiment of the present invention.

Referring to Figure 1A, a substrate 10 is provided. The substrate 10 may be formed of at least one semiconductor or semiconductor compound material selected from the group consisting of Si, Ge, SiGe, GaP, GaAs, SiC, SiGeC, InAs, and InP. The material of the substrate 10 may also be tantalum (SOI) on the insulating layer. The substrate 10 may be germanium on a semiconductor, semiconductor compound or insulating layer on which various members have been formed. The various components are, for example, gold oxide semi-transistors, metal interconnected contact windows, wire or vias, twinned substrates, dielectric layers, or combinations thereof, which are not shown in the drawings.

Next, a dielectric layer 12 is formed on the substrate 10. The material of the dielectric layer 12 is, for example, ruthenium oxide, spin-on glass (SOG), phosphoric bismuth glass (PSG), borophosphoquinone glass (BPSG) or a low dielectric constant material having a dielectric constant of less than 4. The method of forming the dielectric layer 12 is, for example, a spin coating method or a chemical vapor deposition method. The thickness of the dielectric layer 12 is, for example, 1000 angstroms to 6000 angstroms.

Then, a hard mask layer 13 is formed on the dielectric layer 12. The hard mask layer 13 may be a single layer material or a multilayer material such as tantalum nitride or phosphor haze. Thereafter, a patterned photoresist layer 15 is formed on the hard mask layer 13. In another embodiment, the patterned photoresist layer 15 may be formed directly without forming the hard mask layer 13.

Thereafter, referring to FIG. 1B, the patterned photoresist layer 15 is used as a mask to perform an etching process to etch the hard mask layer 13 to form a hard mask layer 13a. Thereafter, an etching process is continued to form openings 14 in the dielectric layer 12. The opening 14 exposes the substrate 10. Thereafter, the patterned photoresist layer 15 is removed.

Thereafter, referring to FIG. 1C, a barrier layer 16 is formed on the substrate 10 to cover the sidewalls and the bottom of the opening 14 and the hard mask layer 13a. The material of the barrier layer 16 is, for example, platinum (Pt), iridium (Ir), titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), tungsten (W), tungsten nitride. (WN) or a combination thereof. The method of forming the barrier layer 16 is, for example, a chemical vapor deposition method or a physical vapor deposition method, and the thickness is, for example, 10 Å to 500 Å.

Thereafter, a conductor layer 18 is formed on the substrate 10 to cover the barrier layer 16 and fill the opening 14. The material of the conductor layer 18 may be a metal or an alloy such as tungsten, aluminum, copper or an alloy thereof, and is formed by, for example, electroplating or physical vapor deposition, and has a thickness of, for example, 100 Å to 5000 Å.

Thereafter, referring to FIG. 1D, the conductor layer 18 over the dielectric layer 12 is removed, the barrier layer 16 is exposed, and a conductor damascene structure 18a is formed in the opening 14. The conductor damascene structure 18a has a recess 22. More specifically, the height of the top surface 26 of the conductor damascene structure 18a is lower than the height of the top surface 24 of the dielectric layer 12. The method of removing the conductor layer 18 includes, for example, a chemical mechanical polishing method or an etch back method. It is particularly noted that after removing a portion of the conductor layer 18 to expose a portion of the barrier layer 16, it is more over-grinded or over-etched to continue removing portions of the conductor layer 18 until a conductor inlay having the recess 22 is formed. Structure 18a. The shape of the recess 22 may not be limited to the dish shape shown in the drawing, or may have a shape with a flat top surface (not shown) as long as the height of the top surface 26 of the recess 22 is lower than the top surface of the dielectric layer 12. The height of 24 can be. In an embodiment, the depth of the recess 22 is, for example, 50 angstroms to 1000 angstroms.

Then, referring to FIG. 1E, a barrier layer 28 is formed on the substrate 10. The barrier layer 28 covers the barrier layer 16 and covers the top surface 26 of the conductor damascene structure 18a. The material of the barrier layer 28 may be the same as or different from the material of the barrier layer 16. The material of the barrier layer 28 is, for example, platinum, tantalum, titanium, titanium nitride, tantalum, tantalum nitride, tungsten, tungsten nitride or a combination thereof. The method of forming the barrier layer 28 is, for example, a chemical vapor deposition method or a physical vapor deposition method, and the thickness is, for example, 200 angstroms to 2000 angstroms.

Thereafter, referring to FIG. 1F, the barrier layer 28, the barrier layer 16 and the hard mask layer 13a on the dielectric layer 12 are removed, leaving the barrier layer 28a and the barrier layer 16a in the opening 14. The thickness T of the barrier layer 28a is, for example, between 100 angstroms and 1000 angstroms. The method of removing the barrier layer 28 and the barrier layer 16 on the dielectric layer 12 is, for example, a chemical mechanical polishing method or an etch back method.

Thereafter, referring to FIG. 1G, a conductor structure 34 and a dielectric layer 36 are formed on the substrate 10. In an embodiment, the conductor damascene structure 18a is a longitudinally extending conductor plug. The conductor structure 34 is a horizontally extending wire (or metal wire) covering the dielectric layer 12, the barrier layers 16a and 28a, and electrically connected to the conductor damascene structure 18a. The conductor structure 34 and the dielectric layer 36 may be formed by first forming a conductor layer (not shown) on the substrate 10, and then patterning the conductor layer to form the conductor structure 34 (wire). Thereafter, a dielectric layer 36 is formed. The material of the conductor structure 34 is, for example, copper or an alloy thereof, and is formed by, for example, electroplating or physical vapor deposition. The material of the dielectric layer 36 is, for example, ruthenium oxide, spin-on glass, phosphoric glass, borophosphon glass or a low dielectric constant material having a dielectric constant of less than 4.

Referring to FIG. 2, in another embodiment, after removing the barrier layer 28, the barrier layer 16 and the hard mask layer 13a on the dielectric layer 12 shown in FIG. 1F, a conductor may be formed on the substrate 10. Structure 134 and dielectric layer 136. More specifically, the conductor damascene structure 18a is a horizontally extending wire (or metal wire) that includes a longitudinally extending conductor plug 138 and a barrier layer 140. The method of forming the conductor structure 134 and the dielectric layer 136 may first form a dielectric layer 136 on the substrate 10 and then form a via hole 142 in the dielectric layer 136. Thereafter, a barrier layer 140 is formed on the sidewalls and the bottom of the via hole 142, and a conductor plug 138 is formed in the via hole 142. The material of the dielectric layer 136 is, for example, ruthenium oxide, spin-on glass, phosphorous glass, borophosphon glass or a low dielectric constant material having a dielectric constant of less than 4. The material of the barrier layer 140 is, for example, platinum, tantalum, titanium, titanium nitride, tantalum, tantalum nitride, tungsten, tungsten nitride or a combination thereof. The method of forming the barrier layer 140 is, for example, a chemical vapor deposition method or a physical vapor deposition method, and the thickness is, for example, 10 Å to 500 Å. The material of the conductor plug 138 is, for example, copper, tungsten or aluminum copper compound or the like. The method of forming the conductor plug 138 is, for example, electroplating or physical vapor deposition.

In the present embodiment, after the barrier layer 28, the barrier layer 16 and the hard mask layer 13a on the dielectric layer 12 shown in FIG. 1E are removed, the surface of the conductor damascene structure 18a has been completely blocked by the barrier layer 28a. Covering, the barrier layer 28a can protect the conductor damascene structure 18a. Therefore, before forming the conductor structure 34 shown in FIG. 1G or the dielectric layer 136 shown in FIG. 2, it is not necessary to form a protective layer on the substrate 10 (for example, a tantalum nitride layer or a copper suppression layer. Moreover, since the barrier layer 28a is a conductor, it can be electrically connected to the subsequently formed conductor structure 34 or the conductor structure 134. Therefore, the barrier layer 28a on the conductor damascene structure 18a need not be removed, and the conductor damascene structure 18a can be avoided in subsequent processes. It suffers from oxidation or etching corrosion.

Referring to FIG. 1F, the metal interconnect structure of the embodiment of the present invention includes a dielectric layer 12, a conductor damascene structure 18a, a barrier layer 16a, and a barrier layer 28a.

The dielectric layer 12 is on the substrate 10. Dielectric layer 12 has an opening 14 that exposes substrate 10. The conductor damascene structure 18a is located in the opening 14, and the top surface 26 of the conductor damascene structure 18a is lower than the top surface 24 of the dielectric layer 12. The barrier layer 16a and the barrier layer 28a are both located in the opening 14, and the conductor damascene structure 18a is completely covered. More specifically, the side walls and bottom of the conductor damascene structure 18a are covered by the barrier layer 16a; and the top surface 26 of the conductor damascene structure 18a is covered by the barrier layer 28a. In other words, the barrier layer 16a is located between the dielectric layer 12 and the conductor damascene structure 18a and between the substrate 10 and the conductor damascene structure 18a. The barrier layer 28a is located on the top surface 26 of the conductor damascene structure 18a. The material of the barrier layer 16a and the barrier layer 28a may be the same or different. The material of the barrier layer 16a and the barrier layer 28a includes platinum, tantalum, titanium, titanium nitride, tantalum, tantalum nitride, tungsten, tungsten nitride or a combination thereof.

Referring to FIG. 1G , in an embodiment, the metal interconnect structure may further include a conductor structure 34 and a dielectric layer 36 . The conductor damascene structure 18a is a longitudinally extending conductor plug. The conductor structure 34 is a horizontally extending wire (or metal wire) covering the dielectric layer 12, the barrier layers 16a and 28a, and electrically connected to the conductor damascene structure 18a. The material of the conductor structure 34 is, for example, copper or an alloy thereof. The material of the dielectric layer 36 is, for example, ruthenium oxide, spin-on glass, phosphoric glass, borophosphon glass or a low dielectric constant material having a dielectric constant of less than 4.

Referring to FIG. 2 , in another embodiment, the metal interconnect structure may further include a conductor structure 134 and a dielectric layer 136 . The conductor damascene structure 18a is a horizontally extending wire (or metal wire). The conductor structure 134 can include a longitudinally extending conductor plug 138 and a barrier layer 140. The material of the dielectric layer 136 is, for example, ruthenium oxide, spin-on glass, phosphorous glass, borophosphon glass or a low dielectric constant material having a dielectric constant of less than 4. The material of the barrier layer 140 is, for example, platinum, tantalum, titanium, titanium nitride, tantalum, tantalum nitride, tungsten, tungsten nitride or a combination thereof. The method of forming the barrier layer 140 is, for example, a chemical vapor deposition method or a physical vapor deposition method, and the thickness is, for example, 50 Å to 500 Å. The material of the conductor plug 138 is, for example, copper, tungsten or aluminum copper.

In the embodiment of the present invention, the conductor damascene structure 18a is completely covered by the barrier layer 28a and the barrier layer 16a, and the conductor damascene structure 18a can be confined in the opening 14 to avoid the conductor damascene structure 18a in the subsequent high-temperature process. Deformed or lost.

In summary, since the top surface of the conductor damascene structure of the embodiment of the present invention is covered with a barrier layer, and the conductor damascene structure is completely covered in the barrier layer material, and since the barrier layer is a conductor, in a subsequent process The barrier layer covering the conductor mosaic structure does not need to be removed, and the conductor mosaic structure is not exposed to the air, thereby preventing the conductor mosaic structure from being exposed to air (especially oxygen) during the process and causing oxidation, and can be avoided. The material of the conductor mosaic structure diffuses, deforms or is lost at high temperatures. In addition, since the present invention can prevent the diffusion of the conductor mosaic structure material, the short circuit phenomenon of the conductor mosaic structure can be further avoided. In addition, in the subsequent process (for example, the cleaning process) after the formation of the conductor damascene structure, since the top surface of the conductor damascene structure is covered by the barrier layer and is not exposed, the conductor mosaic structure and the slurry or the wet can be avoided. The solution used in the wet strip reacts to cause corrosion. Therefore, the present invention can effectively improve the stability of the conductor mosaic structure.

In addition, the process of the metal interconnect (conductor damascene structure) of the embodiment of the present invention can be integrated with the existing process, and the conductor mosaic structure with improved stability can be manufactured without adding too many process steps, which is a benefit industry. The invention of the world.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧Base
12, 36, 136‧‧ dielectric layers
13, 13a‧‧‧ hard mask layer
14‧‧‧ openings
15‧‧‧ patterned photoresist layer
16, 28, 16a, 28a, 140‧‧‧ barrier layers
18‧‧‧Conductor layer
18a‧‧‧Conductor mosaic structure
22‧‧‧ Notch
24, 26‧‧‧ top
34, 134‧‧‧ conductor structure
138‧‧‧ Conductor plug
142‧‧‧Intermediate hole
T‧‧‧ thickness

1A through 1G are cross-sectional views showing the steps of a method of fabricating a metal interconnect structure in accordance with an embodiment of the present invention.

2 is a cross-sectional view showing a metal interconnect structure in accordance with another embodiment of the present invention.

10‧‧‧Base

12‧‧‧Dielectric layer

14‧‧‧ openings

16a, 28a‧‧‧ barrier layer

18a‧‧‧Conductor mosaic structure

24, 26‧‧‧ top

T‧‧‧ thickness

Claims (10)

A metal interconnect structure includes: a dielectric layer on a substrate, the dielectric layer having an opening to expose the substrate; a conductor damascene structure located in the opening, the top surface of the conductor damascene structure is low a top surface of the dielectric layer; a first barrier layer between the dielectric layer and the conductor damascene structure and between the substrate and the conductor damascene structure; and a second barrier layer located at the opening Covering the top surface of the conductor mosaic structure. The metal interconnect structure of claim 1, wherein the material of the first barrier layer and the second barrier layer comprises platinum, tantalum, titanium, titanium nitride, tantalum, tantalum nitride, tungsten , tungsten nitride or a combination thereof. The metal interconnect structure of claim 1, further comprising a conductor structure covering the second barrier layer and electrically connecting the conductor damascene structure. The metal interconnect structure of claim 1, wherein the conductor structure comprises a conductor plug. The metal interconnect structure of claim 1, wherein the conductor structure comprises a wire. A method for fabricating a metal interconnect structure includes: forming an opening in a dielectric layer; forming a first barrier layer in the opening; forming a conductor inlay on the first barrier layer in the opening a structure; and forming a second barrier layer in the opening, the second barrier layer covering a top surface of the conductor damascene structure. The method for fabricating a metal interconnect structure according to claim 6, wherein the first barrier layer and the second barrier layer comprise platinum, tantalum, titanium, titanium nitride, tantalum, tantalum nitride, Tungsten, tungsten nitride or a combination thereof. The method of fabricating a metal interconnect structure according to claim 6, wherein the method of forming the conductor damascene structure comprises: forming a conductor layer to cover the dielectric layer and filling the opening; and shifting In addition to a portion of the conductor layer, the top surface of the conductor damascene structure formed is lower than the top surface of the dielectric layer. The method for fabricating a metal interconnect structure according to claim 6, further comprising forming a wire covering the dielectric layer and the second barrier layer to electrically connect the conductor damascene structure. The method for fabricating a metal interconnect structure according to claim 6, further comprising forming a conductor plug on the second barrier layer to electrically connect the conductor damascene structure.