TW201535458A - System and method for measuring properties of a charged particle beam - Google Patents

System and method for measuring properties of a charged particle beam Download PDF

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TW201535458A
TW201535458A TW104103679A TW104103679A TW201535458A TW 201535458 A TW201535458 A TW 201535458A TW 104103679 A TW104103679 A TW 104103679A TW 104103679 A TW104103679 A TW 104103679A TW 201535458 A TW201535458 A TW 201535458A
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probe
charged particle
probes
primary
deflection
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TW104103679A
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Colin Ribton
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Welding Inst
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245Detection characterised by the variable being measured
    • H01J2237/24507Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24535Beam current
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245Detection characterised by the variable being measured
    • H01J2237/24507Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542Beam profile
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/304Controlling tubes
    • H01J2237/30472Controlling the beam
    • H01J2237/30483Scanning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/31Processing objects on a macro-scale
    • H01J2237/3104Welding

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measurement Of Radiation (AREA)

Abstract

A system is disclosed for measuring properties of a charged particle beam output by a charged particle beam generator. The system comprises: a probe assembly, a beam deflection control module and a detection module. The probe assembly comprises a plurality of probes arrayed across a plane on a mount, each probe comprising at least two elongate, electrically conductive elements arranged such that their respective elongate directions make a non-zero angle with one another in the plane of the array. The beam deflection control module is adapted to control the deflection of the charged particle beam along a measurement path which crosses sequentially at least two of the elongate, electrically conductive elements of at least one of the probes. The detection module is connected to the electrically conductive elements of each of the plurality of probes, and is adapted to detect electric signals output sequentially by the electrically conductive elements of each probe upon intersection of the charged particle beam therewith. The detected electric signals from each probe are indicative of properties of the charged particle beam when directed to the location of the respective probe across the probe assembly by the charged particle beam generator. A corresponding method of measuring properties of a charged particle beam output by a charged particle beam generator is also disclosed.

Description

用以測量帶電粒子束的性質的系統及方法 System and method for measuring the properties of charged particle beams

本發明係有關於用以測量帶電粒子束(包括電子束及離子束)的性質(例如,其寬度及/或強度輪廓)的系統及方法。 The present invention relates to systems and methods for measuring the properties of charged particle beams, including electron beams and ion beams, such as their width and/or intensity profile.

帶電粒子束有許多工業應用,包括材料加工作業,例如焊接,加層製造(additive layer manufacturing),3D列印及鑽孔,切割,固化,熔化,氣化或其他處理,藉此使用該射束修改或處理材料或工件。射束的特徵,例如尺寸及強度,會影響加工結果,因此其用處是能夠測量射束的性質以便檢查射束是否滿足加工的所欲準則,若沒有,則相應地致能射束性質的調整。 Charged particle beams have many industrial applications, including material processing operations such as welding, additive layer manufacturing, 3D printing and drilling, cutting, curing, melting, gasification or other processes whereby the beam is used. Modify or process materials or workpieces. The characteristics of the beam, such as size and strength, affect the processing results, so its usefulness is to be able to measure the properties of the beam in order to check whether the beam meets the desired criteria for processing, and if not, adjust the beam properties accordingly. .

已知有各種探針裝置用於測量帶電粒子束的性質。在第一類別中,探針包括遮蔽板(masking plate)有穿過它的多個非平行狹縫使穿越它們的射束偏折。射束穿過各個狹縫的部份用一法拉第杯收集以及所得電訊號可用來重建該射束的強度圖(intensity map)。此法的例子揭示於美國專利第US-B-7348568號。US-B-7,875,860,同時, 使用取代狹縫的多個法拉第杯各自接收散射束的一部份。揭示於Dilthey等人在Vacuum Volume 62第2、3期第77-85頁於2001年6月15日發行的“Electron beam diagnostics:a new release of the Diabeam system”的類似技術利用在法拉第杯上面之板子的針孔,射束則在它上面逐行掃描。此法的變體描述於美國專利US-B-6977382,其中,射束在針頭上面逐行掃描,以及用數個回散射電子偵測器(backscattered electron detector)收集反射訊號。 Various probe devices are known for measuring the properties of charged particle beams. In a first category, the probe includes a masking plate having a plurality of non-parallel slits therethrough that deflect the beam passing through them. The portion of the beam that passes through each slit is collected by a Faraday cup and the resulting electrical signal can be used to reconstruct an intensity map of the beam. An example of such a method is disclosed in U.S. Patent No. US-B-7,348,568. US-B-7,875,860, meanwhile, A plurality of Faraday cups that replace the slits each receive a portion of the scattered beam. A similar technique disclosed in "Electron beam diagnostics: a new release of the Diabeam system" issued by Dilthey et al., Volume 2, Nos. 2, 3, pp. 77-85, June 15, 2001, is used on the Faraday Cup. The pinhole of the board, on which the beam is scanned line by line. A variant of this method is described in U.S. Patent No. 6,977,382, in which the beam is scanned line by line on the needle and the reflected signals are collected by a number of backscattered electron detectors.

另一形式的探針包括一或更多接線經配置成在該射束與該(等)接線相對運動期間可與該射束交叉。英國專利第GB-B-1209034號揭示數個例子。部份射束電流(beam current)收集於該(等)接線上以及偵測由該(等)接線輸出的所得電訊號。衍生自探針的脈衝代表射束在交叉點(或數個)處的近似能量密度輪廓。 Another form of probe includes one or more wires configured to intersect the beam during relative movement of the beam to the (etc.) wire. British Patent No. GB-B-1209034 discloses several examples. A partial beam current is collected on the (etc.) wiring and detects the resulting electrical signal output by the (etc.) wiring. The pulse derived from the probe represents the approximate energy density profile of the beam at the intersection (or several).

包括以上所述的所有習知探針裝置都設計成沿著射束產生器的軸線(例如,電子槍桿的軸線)或很靠近該軸線地測量射束的性質。例如,電子束加工機歷史上用來焊接及熔化材料的射束通常最多只稍微偏折離開主軸線數毫米。例如,傳統加工應用的典型射束偏折1度以下以及寬度不到10毫米。 All of the conventional probe devices including those described above are designed to measure the properties of the beam along or very close to the axis of the beam generator (e.g., the axis of the electron gun). For example, electron beam processors have historically used to weld and melt a material's beam typically at most a few millimeters away from the main axis. For example, typical beam deflections for conventional processing applications are less than 1 degree and widths are less than 10 millimeters.

根據本發明的第一態樣,一種用以測量由帶電粒子束產生器輸出之帶電粒子束的性質的系統,其係包括: 一探針組件(assembly),其係包括在一片框(mount)上之一平面中排成陣列的多個探針,各個探針包括至少兩個長形導電元件,經配置成彼等的各自長形方向在該陣列之平面中互相形成一非零角度;一射束偏折控制模組,適合控制該帶電粒子束沿著一測量路徑的偏折,該測量路徑依序橫越該等探針中之至少一者的該等長形導電元件中之至少兩個;以及一偵測模組,連接至該等多個探針中之每一者的該等導電元件,其適合偵測由各個探針之該等導電元件依序在與該帶電粒子束交叉時輸出的電訊號,來自各個探針的該等偵得電訊號表明該帶電粒子束在用該帶電粒子束產生器遍及該探針組件地指向各個探針之位置時的性質。 In accordance with a first aspect of the present invention, a system for measuring the properties of a charged particle beam output by a charged particle beam generator includes: A probe assembly comprising a plurality of probes arranged in an array in a plane on a single piece, each probe comprising at least two elongate conductive elements configured to be their respective The elongate directions form a non-zero angle with each other in the plane of the array; a beam deflection control module is adapted to control the deflection of the charged particle beam along a measurement path, the measurement path sequentially traversing the probe At least two of the elongate conductive elements of at least one of the pins; and a detection module coupled to the conductive elements of each of the plurality of probes The electrical signals output by the conductive elements of the respective probes in sequence when intersecting the charged particle beam, the detected electrical signals from the respective probes indicate that the charged particle beam is used throughout the probe by the charged particle beam generator The nature of the needle assembly when it points to the position of each probe.

藉由以此方式提供由多個探針組成的陣列,可測量射束在寬廣射束偏折角度範圍內(對應至該陣列的範圍)的性質而且不單單是在軸上位置或附近。各個探針致能測量射束在偏折至該探針之位置時呈現的性質(例如,寬度及強度),藉此致能隨時改變射束在偏折至待偵測離軸位置時出現的性質,以及(若需要)修正它,使得該射束性質在偏折角度範圍內保持實質一致。這顯然例如在出射過程中很重要,例如電子束加層製造或3D列印以及電子束表面紋理化,它使射束在寬廣的區域偏折以及需要保持射束品質,甚至在射束偏折離開電子槍桿軸線數百毫米時。例如,射束可能需要以達25度的角度掃掠寬度達400 毫米的工件。 By providing an array of multiple probes in this manner, the properties of the beam over a wide range of beam deflection angles (corresponding to the extent of the array) can be measured and not just at or near the axis. Each probe enables measurement of the properties (eg, width and intensity) exhibited by the beam as it is deflected to the position of the probe, thereby enabling the ability to change the properties of the beam as it deflects to the off-axis position to be detected at any time. And, if necessary, correct it so that the beam properties remain substantially uniform over the range of deflection angles. This is obviously important, for example, in the exit process, such as electron beam plus layer fabrication or 3D printing and electron beam surface texturing, which deflects the beam over a wide area and the need to maintain beam quality, even in beam deflection. When leaving the axis of the electron gun hundreds of millimeters. For example, the beam may need to sweep a width of up to 400 at an angle of up to 25 degrees. Millimeter of workpiece.

該探針陣列最好延伸橫越工作區,射束在加上該陣列之裝置的操作期間會在其上方移動。因此,該陣列允許測量在工作區中各個不同位置的射束性質(對應至該等探針的離散位置),以及因而可用起來提供射束性質在工作區有一致性的保證,及/或提供回饋使得射束光學參數的調整可達成此保證。例如,品質控制嚴苛的航太製造商需要這種的射束保證。該探針陣列允許測量整個工作區上的射束性質而探針部件不需要任何人工調整,因此在真空室的情形下,若需要,可快速完成射束特徵化以及在機器的單一抽氣循環(single pump down cycle)內。此外,沒有活動部件,因而該系統強健可靠。 The probe array preferably extends across the working area and the beam moves over it during operation of the device to which the array is applied. Thus, the array allows for the measurement of beam properties at various locations in the work area (corresponding to discrete locations of the probes), and thus can be used to provide assurance that the beam properties are consistent across the work area, and/or provide Feedback allows adjustment of the beam optical parameters to achieve this guarantee. For example, aerospace manufacturers with strict quality control require this beam guarantee. The probe array allows for the measurement of beam properties over the entire working area without the need for any manual adjustment of the probe components, so in the case of a vacuum chamber, beam characterization and single pumping cycles in the machine can be done quickly if needed. (single pump down cycle). In addition, there are no moving parts, so the system is robust and reliable.

藉由形成導電元件的各個探針,以及在射束橫越它時,偵測由各個元件輸出的電訊號,各個探針對於射束的著陸角度實質不敏感。這很重要,因為,如上述,射束打到各個探針的角度會顯著不同,對於鄰近主軸線的探針約為零度,對於在陣列周邊的探針例如達25度。相較之下,大部份的習知探針類型只適合用來測量實質沿著彼之法線打到探針的射束之性質(亦即,約零度)。例如,基於數個狹縫或一針孔的探針裝置要求該等狹縫或該孔狹窄以及穿過厚基板,以便在不熔化基板下實現良好的解析度。同樣地,如果射束以明顯遠離零的角度打擊探針,則狹縫或孔的牆體會阻礙射束通過以及阻止任何訊號的偵測。不過,導電元件會輸出訊號,不受它與射束的交叉角 度影響,甚至如果明顯遠離零的話。因此,本發明探針在陣列的任何位置上可充分操作,這致能在各個探針位置一致地測量射束性質。此外,所有該等探針可彼此一樣而且可互換或在陣列內由一位置移到的另一個而無損害。 The individual signals output by the respective elements are detected by the individual probes forming the conductive elements, and the individual probes are substantially insensitive to the landing angle of the beam as the beam traverses it. This is important because, as mentioned above, the angle at which the beam hits the individual probes can vary significantly, about zero degrees for probes adjacent to the main axis, for example up to 25 degrees for probes around the array. In contrast, most conventional probe types are only suitable for measuring the nature of the beam hitting the probe substantially along its normal (i.e., about zero degrees). For example, probe devices based on a number of slits or a pinhole require the slits or the holes to be narrow and pass through a thick substrate to achieve good resolution without melting the substrate. Similarly, if the beam strikes the probe at an angle that is significantly away from zero, the wall of the slit or hole can obstruct the beam passage and prevent any signal detection. However, the conductive element will output a signal, independent of its intersection with the beam. Degree effects, even if significantly away from zero. Thus, the probe of the present invention is fully operable at any position of the array, which enables consistent measurement of beam properties at various probe locations. Moreover, all of the probes can be identical to each other and interchangeable or moved from one location to another within the array without damage.

藉由提供各個探針帶有至少兩個長形導電元件經配置成彼等的各自長形方向在該陣列之平面(實質垂直於射束產生器(例如,電子槍桿)的軸線為較佳)中互相形成一非零角度,亦即,使得該等元件非平行,在各個探針位置可測量射束在至少兩個方向的性質,藉此致能例如測量在各個探針的射束大小及形狀(例如,橢圓度)。例如,射束速度的給定知識(knowledge)以及測量路徑橫越各個元件的角度,由該元件輸出之電訊號的持續時間可算出射束在與元件長形方向垂直之方向的寬度。因此,在各個探針測量性質的至少兩個方向將取決於該等元件的長形方向,同時這些可能隨著探針不同而不同,最好構成該陣列的所有探針的元件沿著相同的該至少兩個方向配置藉此在各個探針位置,測量在相同至少兩個方向的射束性質。以下說明個別探針的其他較佳特徵。 By providing each probe with at least two elongate conductive elements configured such that their respective elongate directions are in the plane of the array (substantially perpendicular to the axis of the beam generator (eg, electron gun)) Forming a non-zero angle with each other, that is, making the elements non-parallel, measuring the properties of the beam in at least two directions at each probe position, thereby enabling, for example, measuring the beam size and shape at each probe (for example, ellipticity). For example, given the knowledge of the beam velocity and the angle at which the measurement path traverses the individual components, the duration of the electrical signal output by the component can be calculated as the width of the beam in a direction perpendicular to the direction of the element's elongate shape. Thus, at least two directions in which the properties of the respective probes are measured will depend on the elongate direction of the elements, while these may vary from probe to probe, preferably all of the components of the array that make up the array are along the same The at least two directions are configured whereby the beam properties in the same at least two directions are measured at the respective probe positions. Other preferred features of the individual probes are described below.

該等偵得訊號可在不知道那一個元件或探針是各個訊號的來源下使用,例如藉由檢查各個訊號滿足一或更多預定準則,在這種情形下,可論定在被該射束橫越之各個探針位置的射束性質有可接受程度的一致性。不過,可得到更多資訊,如果訊號各自歸屬於探針的話,以及在該探針內為其起源的特定元件為較佳,因為該射束的 性質隨後可與它的偏折位置(亦即,探針位置)關聯以及反對該等元件的絕對方向。因此,該偵測模組更適合識別那一個探針中之那一個長形導電元件為各個偵得電訊號的來源為較佳。達成此事,例如,可藉由將該偵測模組組配成有多個通道,一個用於各個元件,藉此自動互相區別進入的訊號。在此情形下,該等元件本身需要彼此電隔離以避免串音(cross-talk)。 The detected signals may be used without knowing which component or probe is the source of each signal, for example by checking that each signal satisfies one or more predetermined criteria, in which case it may be determined that the signal is being shot. The beam properties of the individual probe positions across the beam have an acceptable degree of uniformity. However, more information is available, if the signals are each attributed to the probe, and the particular component for which it originates within the probe is preferred because of the beam The property can then be associated with its offset position (i.e., probe position) and against the absolute orientation of the elements. Therefore, the detection module is more suitable for identifying the one of the long conductive elements of the probe as the source of each detected electrical signal. This can be achieved, for example, by grouping the detection modules into a plurality of channels, one for each component, thereby automatically distinguishing incoming signals from each other. In this case, the elements themselves need to be electrically isolated from each other to avoid cross-talk.

不過,在更佳具體實施例中,各個探針的長形導電元件彼此互相電氣接觸。例如,該等元件彼此可互相實體接觸,或藉由另一傳導構件連接,或甚至可互相整合。例如,該等至少兩個長形元件可為單一傳導接線或其他絲線的不同部份,經操作成各個部份對齊不同的方向,例如,藉由環繞適當夾持具地卷繞接線。使各個探針的元件互相電氣接觸簡化探針組件的構造,因為各個探針只需要製作一條電氣連接。該偵測模組隨後在不同的通道上可接收來自各個探針的訊號。不過,更佳的是,各個探針的該等長形導電元件與其他探針的並聯或串聯連接,以及該偵測模組適合在一單一通道上接收由該探針組件之該等導電元件輸出的該等電訊號。這特別有益,因為該偵測模組與該探針組件之間只需要單一通孔而且這大幅簡化系統的部署,特別是在使用於真空室時(這是常見的情形),在此通過該室之內部與外部的各個導管必須小心地加工以保持真空。 However, in a more preferred embodiment, the elongate conductive elements of the respective probes are in electrical contact with each other. For example, the elements may be in physical contact with each other, or connected by another conductive member, or even integrated with each other. For example, the at least two elongate members can be a single conductive wire or different portions of other wires that are manipulated to align the various portions in different directions, for example, by winding wires around a suitable clamp. Electrically contacting the components of each probe with each other simplifies the construction of the probe assembly because each probe only needs to make one electrical connection. The detection module can then receive signals from the various probes on different channels. More preferably, however, the elongate conductive elements of each probe are connected in parallel or in series with other probes, and the detection module is adapted to receive the conductive elements from the probe assembly on a single channel. The electrical signals are output. This is particularly beneficial because only a single through hole is required between the detection module and the probe assembly and this greatly simplifies the deployment of the system, especially when used in a vacuum chamber, which is a common situation, where The individual conduits inside and outside the chamber must be carefully machined to maintain vacuum.

當該偵測模組在單一通道上接收來自一個 以上之探針或元件的訊號時,該偵測模組最好包括一關聯部(correlation section)適合識別那一個探針中之那一個導電元件為各個偵得電訊號的來源,其係基於該測量路徑的知識(預定的為較佳)以及各個電訊號的偵測時間及/或者是偵測該等電訊號的順序。例如,如果橫越該等元件之射束所遵循的路徑為已知,由於該等訊號的接收順序與該射束交叉該等元件的順序相同,各個訊號可歸屬於一元件係藉由它被偵測的順序或藉由對應至各個訊號的時間戳記。可用許多方法得到該測量路徑的知識。在一實施例中,該系統可依賴關於該射束應遵循之路徑的儲存資訊,因此最好提供儲存測量路徑資料的記憶體,該儲存測量路徑資料最好包括:該射束的起始位置,將會被該射束遵循的路徑,以及視需要,至少在與該等導電元件的交叉點處之該射束的速度。不過,為求更準確,最好基於該射束之及時偏折的識別,因此該測量路徑之該知識由一射束位置監測部提供是有利的,其適合從該帶電粒子束產生器及/或該射束偏折控制模組接收關於該射束之目前偏折的資訊。在有些情形下,這兩個方法的組合可能是適當的。 When the detection module receives from a single channel from one In the case of the above probe or component signal, the detection module preferably includes a correlation section adapted to identify the one of the probes as a source of each detected electrical signal, based on the The knowledge of the measurement path (preferred is preferred) and the detection time of each electrical signal and/or the order in which the electrical signals are detected. For example, if the path followed by the beams traversing the elements is known, since the order in which the signals are received is the same as the order in which the beams intersect the elements, each signal can be attributed to a component by which it is The order of detection or by the timestamp corresponding to each signal. Knowledge of this measurement path can be obtained in a number of ways. In one embodiment, the system may rely on stored information regarding the path that the beam should follow, and therefore preferably provides memory for storing measurement path data, preferably including: the starting position of the beam The path that will be followed by the beam, and, if desired, at least at the intersection of the conductive elements. However, for more accuracy, it is preferred to be based on the identification of the timely deflection of the beam, so that this knowledge of the measurement path is advantageously provided by a beam position monitoring unit, which is suitable for use from the charged particle beam generator and/or Or the beam deflection control module receives information about the current deflection of the beam. In some cases, a combination of these two methods may be appropriate.

可用許多方法在射束偏折控制模組的控制下實現使該射束沿著(預定為較佳)測量路徑偏折。通常該帶電粒子束產生器(例如,電子槍)會包括一初級射束偏折單元與一初級控制器適合產生及輸出一初級控制訊號給該初級射束偏折單元用以引導該射束至一選定位置或沿著一初級射束路徑移動,在正常操作期間,它會採取移動使該 射束沿著該預期材料加工路徑移動,例如焊接線路或其類似者。在一些情形下,本發明系統的射束偏折控制模組可用該帶電粒子束產生器的初級控制器實作,其係按需要程式化成使該射束沿著所欲測量路徑移動。不過,此一方法並非較佳,因為許多射束產生器包含失真的自動射束調整,例如散光(astigmatism),布角度相依性,因此如果該初級控制器程式化成使該射束沿著該測量路徑偏折,該射束會經歷自動調整,這意謂它在各個元件處測得的性質會不同而不精確地表示在指向該探針位置時的射束。此外,此類控制器通常以數位方式界定一射束路徑,亦即,為一系列的離散位置,如果射束在其間充分慢地移動,會形成連續線路。不過,在射束最好以高速移動橫越該等探針元件以免該等元件熔化時,該路徑的數位本質可能導致該射束所照射的位置不連續,這可能造成該射束在經過該等探針元件時的速度有變動,而造成探針訊號失真。雖然這可用訊號的後處理修正,然而這不合乎需要,因為它使訊號處理及解譯變複雜。 The beam can be deflected along the (predeterminedly preferred) measurement path by a number of methods under the control of the beam deflection control module. Typically, the charged particle beam generator (eg, an electron gun) includes a primary beam deflection unit and a primary controller adapted to generate and output a primary control signal to the primary beam deflection unit for directing the beam to a Move the selected position or along a primary beam path, during normal operation, it will take the move to make The beam moves along the intended material processing path, such as a weld line or the like. In some cases, the beam deflection control module of the system of the present invention can be implemented with a primary controller of the charged particle beam generator that is programmed to move the beam along the desired measurement path as needed. However, this method is not preferred because many beam generators contain distorted autobeam adjustments, such as astigmatism, cloth angle dependencies, so if the primary controller is programmed to cause the beam to follow the measurement The path is deflected and the beam undergoes an automatic adjustment, which means that the properties it measures at the various elements will differ differently and not accurately represent the beam at the point of the probe. Moreover, such controllers typically define a beam path in a digital manner, that is, as a series of discrete locations that form a continuous line if the beam moves sufficiently slowly therebetween. However, when the beam is preferably moved at high speed across the probe elements to prevent the elements from melting, the digital nature of the path may cause the beam to be illuminated at a discontinuous position, which may cause the beam to pass through the The speed of the probe element changes, causing the probe signal to be distorted. Although this can be corrected by post-processing of the signal, this is not desirable because it complicates signal processing and interpretation.

因此,在一較佳實作中,該射束偏折控制模組包括一次級控制器經組配成輸出一次級控制訊號而疊加於由該初級控制器輸出的該初級控制訊號,該次級控制訊號界定一次級射束路徑,使得該初級射束偏折單元引導該射束沿著為該次級射束路徑與任何初級射束路徑之一組合的該測量路徑移動。以此方式,該初級控制器“未察覺”由該次級控制訊號強加於該射束的額外偏折,因而不進行 由額外偏折引起的自動射束調整,使得該射束性質仍然與該射束移動橫越任一探針之該等元件時的實質相同,以及測得性質準確地表示該射束在指向該探針位置時的性質。此外,該次級控制訊號最好為類比,因而不會有與數位控制有關的上述困擾。 Therefore, in a preferred implementation, the beam deflection control module includes a primary controller that is configured to output a primary control signal and is superimposed on the primary control signal output by the primary controller. The control signal defines a primary beam path such that the primary beam deflection unit directs the beam to move along the measurement path that is combined with one of the primary beam paths and any of the primary beam paths. In this way, the primary controller "unawares" the additional deflection imposed by the secondary control signal on the beam and thus does not proceed Automatic beam adjustment caused by additional deflection such that the beam properties are substantially the same as when the beam is moved across the elements of any of the probes, and the measured properties accurately indicate that the beam is pointing at the The nature of the probe position. In addition, the secondary control signal is preferably analogous and thus does not have the above-mentioned problems associated with digital control.

替換地,該射束偏折控制模組可包括設置於該初級射束偏折單元之下游的一次級射束偏折單元以及一次級控制器經組配成輸出一次級控制訊號至該次級射束偏折單元,該次級控制訊號界定一次級射束路徑,使得該初級及該次級射束偏折單元一起引導該射束沿著為該次級射束路徑與任何初級射束路徑之一組合的該測量路徑移動。再者,以此方式強加額外偏折於該射束而不影響該射束產生器所做的任何調整。在加裝該系統於現有帶電粒子束產生器時,此實作特別適合。以下描述一種裝置實施例,其係包括可輕易安裝於此類機器中而不需要修改該機器的探針組件及次級射束偏折單元。 Alternatively, the beam deflection control module may include a primary beam deflection unit disposed downstream of the primary beam deflection unit and the primary controller is configured to output a primary control signal to the secondary a beam deflecting unit, the secondary control signal defining a primary beam path such that the primary and the secondary beam deflecting unit together direct the beam along the secondary beam path and any primary beam path One of the combined measurement paths moves. Again, additional deflections are imposed on the beam in this manner without affecting any adjustments made by the beam generator. This implementation is particularly suitable when retrofitting the system to an existing charged particle beam generator. An apparatus embodiment is described below that includes a probe assembly and a secondary beam deflecting unit that can be easily installed in such machines without the need to modify the machine.

應注意,在有些情形下,該初級及/或次級(若有的話)射束偏折單元可能無法精確地實現該(等)控制訊號所指示的偏折,亦即,有偏折偏差(deflection discrepancy),在這種情形下,該射束可能無法準確地遵循所欲測量路徑(至少在最初)。以下描述考慮到此事的技術。 It should be noted that in some cases, the primary and/or secondary (if any) beam deflection unit may not accurately achieve the deflection indicated by the (etc.) control signal, ie, bias deviation (deflection discrepancy), in this case, the beam may not accurately follow the desired measurement path (at least initially). The following describes the technology that takes this into consideration.

在測量過程期間,通常射束由一探針位置到下一個的粗動會由該射束產生器執行,例如由上述初級射束路徑界定的。該射束可連續地由一探針移到下一個(以 不變或可變的速度),或導向數個離散位置,一個對應至各個探針,以及該射束在中間位置是關掉的。該射束偏折控制模組使射束微動造成該射束偏移離開初級路徑以產生所欲測量路徑。可連續地施加這種偏移(deviation),或可基於射束速度及時序的知識來與該初級路徑同步,但是最佳的是,該射束偏折控制模組包括一監測部適合從該帶電粒子束產生器接收關於該射束之目前偏折的資訊,來自該初級控制器的該初級控制訊號為較佳,以及回應收到的資訊而輸出該次級控制訊號。這使得該射束能在路徑上的選定點偏移離開它的初級路徑,以便形成該測量路徑。 During the measurement process, typically the coarse motion of the beam from one probe position to the next is performed by the beam generator, such as defined by the primary beam path described above. The beam can be continuously moved from one probe to the next (in Invariant or variable speed), or directed to a number of discrete positions, one corresponding to each probe, and the beam is turned off at an intermediate position. The beam deflection control module causes beam fretting to cause the beam to shift away from the primary path to produce the desired measurement path. The deviation may be applied continuously, or may be synchronized with the primary path based on knowledge of beam velocity and timing, but optimally, the beam deflection control module includes a monitoring portion adapted from the The charged particle beam generator receives information about the current deflection of the beam, the primary control signal from the primary controller is preferred, and the secondary control signal is output in response to the received information. This allows the beam to be offset from its primary path at a selected point on the path to form the measurement path.

較佳地,該射束偏折控制模組適合回應該射束偏折到達一或更多預定義觸發位置而輸出該次級控制訊號,各個預定義觸發位置對應至該等探針中之一不同者的位置為較佳。例如,該次級控制訊號可界定一實質圓形或弓形路徑,它在該等選定觸發位置處疊加於該初級路徑,造成該射束橫越多個該等探針對應至該等觸發位置中之每一者的該等至少兩個長形導電元件。如上述,該初級控制訊號可經組配成使該射束依序在各個觸發位置保持靜止不動,使得在到達各個位置時,該射束只在該次級控制訊號的控制下移動以界定該測量路徑。 Preferably, the beam deflection control module is adapted to output the secondary control signal by returning the beam deflection to one or more predefined trigger positions, and each predefined trigger position corresponds to one of the probes. The position of the different person is preferred. For example, the secondary control signal can define a substantially circular or arcuate path that is superimposed on the primary path at the selected trigger locations, causing the beam to traverse a plurality of the probes corresponding to the trigger positions The at least two elongated conductive elements of each of them. As described above, the primary control signal can be configured such that the beam remains stationary at each of the trigger positions, such that upon reaching each position, the beam moves only under the control of the secondary control signal to define the Measuring path.

較佳地,各個探針在射束所遵循的測量路徑內保持靠近探針中心,例如在2至5毫米內,使得離開該探針中心以便遵循該測量路徑的偏折很小。照此,該射束在該測量路徑的測得性質可用來作為該射束在探針中心 的近似代表。 Preferably, each probe remains close to the center of the probe within the measurement path followed by the beam, for example within 2 to 5 millimeters, such that the deflection away from the center of the probe to follow the measurement path is small. As such, the measured properties of the beam at the measurement path can be used as the beam at the center of the probe. Approximate representation.

不過,該射束偏折經實作成,該測量路徑最好包括至少一線段橫越該等探針中之一者的該等長形導電元件中之至少兩個,全部為較佳,該線段為實質圓形或遵循一實質圓弧。例如該圓或弧最好可定中心於該探針中心上以及有利的是,可有例如2至4毫米的小半徑使得該射束遠離該探針中心的偏折很小。較佳地,該圓形或弓形線段為由該次級控制器所輸出之次級控制訊號界定的偏折路徑,以及為有恆定射束速度的輸出最佳。圓形或弓形路徑較佳,因為由於偏折手段(deflection means)有依賴類比波形輸入的本質,相較於包括直線區段或角落的其他路徑形式,可更準確地產生圓形或弓形控制訊號。恆定射束速度為較佳使得來自各個元件的偵得電訊號可直接互相比較。不過,如果必要的話,在後處理期間可修正射束速度的變動。圓形或弓形路徑也特別有用於偵測射束的任何偏折偏差,如下述。 However, the beam deflection is implemented such that the measurement path preferably includes at least one line segment traversing at least two of the elongate conductive elements of one of the probes, all of which are preferred, the line segment Be substantially circular or follow a substantial arc. For example, the circle or arc may preferably be centered on the center of the probe and, advantageously, may have a small radius of, for example, 2 to 4 mm such that the deflection of the beam away from the center of the probe is small. Preferably, the circular or arcuate segment is a deflection path defined by the secondary control signal output by the secondary controller and is optimal for output having a constant beam velocity. A circular or arcuate path is preferred because circular or arcuate control signals are more accurately generated due to the nature of the dependent waveform input due to deflection means, compared to other path forms including straight segments or corners. . The constant beam speed is preferably such that the detected electrical signals from the various components can be directly compared to each other. However, if necessary, the variation in beam speed can be corrected during post processing. Circular or arcuate paths are also particularly useful for detecting any deflection deviation of the beam, as described below.

對於離法線相當遠的著陸角度,被射束橫越的實際路徑也可能不對應至預期路徑,因為該探針陣列的平面會有效地以一角度穿過該射束路徑(不論任何偏折偏差)。例如,在此用該(等)控制器指示該射束繞著一圓圈加工,然而在高角度(亦即,朝向探針陣列的周邊),該射束的行進角速度會不變,該射束會在探針組件上描繪出橢圓而不是圓圈。同樣地,該射束在沿著該路徑行進時會改變速度,這會導致來自各個元件的偵得訊號有不同的持續 時間,即使該射束完全對稱。為了避免此事,該次級控制器最好適合依靠該射束的偏折角度來修改該次級控制訊號,最好藉由對各個探針位置施加一橢圓修正用偏折使得該射束在該探針組件上所遵循的路徑在該陣列的各個探針處為實質圓形或弓形(因而該射束速度保持不變)。 For a landing angle that is quite far from the normal, the actual path traversed by the beam may not correspond to the expected path because the plane of the probe array will effectively pass the beam path at an angle (regardless of any deflection) deviation). For example, the controller is used here to instruct the beam to be machined around a circle, however at high angles (i.e., toward the periphery of the probe array), the angular velocity of the beam will be constant, the beam An ellipse is drawn on the probe assembly instead of a circle. Similarly, the beam changes speed as it travels along the path, which causes the detected signals from the various components to have different durations. Time, even if the beam is completely symmetrical. In order to avoid this, the secondary controller is preferably adapted to modify the secondary control signal by means of the deflection angle of the beam, preferably by applying an elliptical correction deflection to each probe position such that the beam is The path followed on the probe assembly is substantially circular or arcuate at each probe of the array (and thus the beam velocity remains the same).

該測量路徑可與單一探針的該等元件交叉,如果只要測量射束在一個位置處的性質時。不過,為了確定在各種位置的射束性質,最好該測量路徑包括多個線段,各個線段橫越該等探針中之一者的該等長形導電元件中之至少兩個,全部為較佳,各個線段與該等探針中之一不同者交叉。最佳的是,該測量路徑係經組態成依序與所有的探針交叉。如前述,該測量路徑在該等線段之間可能不連續(亦即,該射束被關掉)。有利的是,該或各個線段的起點及/或終點與該等長形導電元件中之任一者不重合。這是有益的,因為它減少射束停留於該等元件中之一者上而可能熔化該元件的風險,在低速移動期間或者是在靜止時。 The measurement path can intersect the elements of a single probe if only the nature of the beam at one location is measured. However, in order to determine the beam properties at various locations, preferably the measurement path comprises a plurality of line segments, each line segment traversing at least two of the elongate conductive elements of one of the probes, all being Preferably, each line segment intersects one of the different ones of the probes. Most preferably, the measurement path is configured to sequentially intersect all of the probes. As mentioned above, the measurement path may be discontinuous between the line segments (i.e., the beam is turned off). Advantageously, the starting point and/or the ending point of the or each line segment does not coincide with any of the elongate conductive elements. This is beneficial because it reduces the risk of the beam staying on one of the components and possibly melting the component, either during low speed movement or at rest.

如前述,完全基於測量路徑的知識,可完成各個訊號起源於那個元件的識別。不過,在一有利的修改中,該等探針各自更包括一標記元件,其係導電且寬度大於該等長形導電元件在被該測量路徑橫越之方向的寬度,該測量路徑另外橫越該標記元件,藉此由各個標記元件在與該帶電粒子束交叉時輸出的一電訊號有大於該等長形元件所輸出的峰值振幅,以及其中,該偵測模組適合至 少部份基於由該標記元件輸出的該電訊號來識別在一探針內的那一個長形導電元件為各個偵得電訊號的來源。由於會知道該探針之該等長形導電元件相對於該標記元件的位置,這有助於識別該等訊號:例如,在高振幅標記訊號之後收到的第一訊號可歸屬於測量路徑上鄰近該標記元件的元件,諸如此類。這有用於在該測量路徑的形成是藉由強加一次級控制訊號於由該射束產生器施加的一初級控制訊號上(如上述)時,因為,如果該次級控制訊號是循環的,它的相位在各個探針位置可能不相同,這意謂該射束橫越一探針之該等元件的順序可能與不同探針的不一樣。 As described above, based on the knowledge of the measurement path, the identification of each component originating from that component can be accomplished. However, in an advantageous refinement, the probes each further comprise a marking element that is electrically conductive and has a width greater than the width of the elongate electrically conductive element in a direction traversed by the measuring path, the measuring path additionally crossing The marking component, wherein an electrical signal output by each marking component when intersecting the charged particle beam has a peak amplitude greater than that output by the elongated component, and wherein the detecting module is suitable for A small portion of the elongate conductive element within a probe is identified as the source of each detected electrical signal based on the electrical signal output by the marking element. Since the position of the elongate conductive elements of the probe relative to the marking element is known, this helps to identify the signals: for example, the first signal received after the high amplitude mark signal can be attributed to the measurement path. An element adjacent to the tag element, and the like. This is used when the measurement path is formed by imposing a primary control signal on a primary control signal applied by the beam generator (as described above) because, if the secondary control signal is cyclic, it The phase may be different at each probe location, which means that the order of the beams across the components of a probe may be different from the different probes.

以此方式提供標記訊號使得該偵測模組能夠根據該射束產生器只監測該射束的目前偏折(例如,來自該初級控制器),這將使得該模組能將各個訊號歸屬於它所起源的探針,以及然後該標記訊號使得各個訊號能各自歸屬於在識別探針內的個別元件。因此,在此情形下,該偵測模組適合識別該探針為各個偵得電訊號的來源係基於該測量路徑的知識以及各個電訊號的偵測時間及/或者是偵測該等電訊號的該或一順序,以及至少部份基於由該標記元件輸出的該電訊號來識別該識得探針之該長形導電元件為各個偵得電訊號的來源。 Providing the marking signal in this manner enables the detection module to monitor only the current deflection of the beam (eg, from the primary controller) based on the beam generator, which will enable the module to assign individual signals to The probe from which it originates, and then the marker signal, allows each signal to be individually assigned to an individual component within the identification probe. Therefore, in this case, the detection module is suitable for identifying that the probe is the source of each detected electrical signal based on the knowledge of the measurement path and the detection time of each electrical signal and/or detecting the electrical signals. The or a sequence, and based at least in part on the electrical signal output by the marking element, identifies the elongated conductive element of the identified probe as a source of respective detected electrical signals.

各個個別探針可能有不同的構造。在特別較佳的具體實施例中,各個探針中之該等至少兩個長形導電元件至少包括第一及第二長形導電元件經配置成彼等的各自長形方向在該陣列之平面中實質互相正交。藉由收集 來自正交元件的訊號,可測量及/或比較該射束在兩個正交方向的寬度,藉此提供射束斑點(beam spot)形狀的示值,例如橢圓度,或偵測該射束在這兩個方向中之每一者的強度輪廓。最佳的是,這兩個方向對齊該射束產生器的x、y軸。最少需要兩個方向以便建立射束的二維強度圖;不過,藉由提供有對齊不同方向之更多元件的各個探針將實現更好的解析度。因此,較佳地,各個探針包括至少3個(至少4個更佳)長形導電元件經配置成彼等的各自長形方向在該陣列之平面中互相形成非零角度,該等各個不同長形方向彼此實質等角地隔開為較佳。例如,在有3個元件時,它們彼此有60度角,以及在有4個元件時,它們彼此有45度角。許多更多元件潛在可能裝設於有不同取向的各個探針中,以便進一步提高解析度。 Individual probes may have different configurations. In a particularly preferred embodiment, the at least two elongate conductive elements of each of the probes comprise at least first and second elongate conductive elements configured such that their respective elongate directions are in the plane of the array The essences are orthogonal to each other. By collecting Signals from orthogonal elements that measure and/or compare the width of the beam in two orthogonal directions, thereby providing an indication of the shape of the beam spot, such as ellipticity, or detecting the beam The intensity profile of each of these two directions. Most preferably, these two directions align with the x, y axes of the beam generator. A minimum of two directions is required in order to establish a two-dimensional intensity map of the beam; however, better resolution will be achieved by providing individual probes with more elements aligned in different directions. Accordingly, preferably, each probe includes at least three (at least four better) elongate conductive elements configured such that their respective elongate directions form a non-zero angle with each other in the plane of the array, such differences It is preferred that the elongate directions are substantially equiangularly spaced from one another. For example, when there are 3 components, they have an angle of 60 degrees to each other, and when there are 4 components, they have an angle of 45 degrees to each other. Many more components are potentially installed in individual probes with different orientations to further increase resolution.

有利的是,各個探針中之該等至少兩個長形導電元件在彼等之間有至少一交叉點(例如,它們在此互相交叉或相互連結),該等元件在此電氣接觸為較佳。例如,任一探針的所有元件可在該探針的中心或其他位置處互相交叉。這對於各個元件可提供額外的實體支撐。在一特別較佳具體實施例中,任一探針中之至少兩個長形導電元件經配置成彼等的長形方向從它們的交叉點徑向延伸而且最好以該交叉點為中心等角地互相隔開。結合經設計成遵循橫越該等元件之圓形或弓形路徑以及定中心於該交叉點上的測量路徑,這致能偵測及修正射束的任何偏折偏差,如下述。 Advantageously, the at least two elongate conductive elements of the respective probes have at least one intersection between them (eg, where they cross each other or are interconnected), the elements being electrically contacted herein good. For example, all of the elements of any of the probes may cross each other at the center or other location of the probe. This provides additional physical support for each component. In a particularly preferred embodiment, at least two of the elongate conductive elements of any of the probes are configured such that their elongate directions extend radially from their intersections and are preferably centered at the intersection. Corners are separated from each other. In combination with a circular or arcuate path designed to traverse the elements and a measurement path centered at the intersection, this enables detection and correction of any deflection deviation of the beam, as described below.

在一特別較佳具體實施例中,各個探針中之該等至少兩個長形導電元件包括以一非零角度互相交叉的至少兩個傳導絲,該等傳導絲視需要為一連續傳導絲的不同部份。這提供特別簡單的構造而且也很強健。例如,該等傳導絲可包括接線、扁帶或條帶。 In a particularly preferred embodiment, the at least two elongate conductive elements of each probe comprise at least two conductive filaments that intersect each other at a non-zero angle, the conductive filaments being a continuous conductive filament as desired. Different parts. This provides a particularly simple construction and is also very robust. For example, the conductive filaments can include wires, straps or strips.

有利的是,該等長形導電元件在該陣列之平面的寬度等於或大於彼等在垂直於該陣列之方向的厚度。這最小化該等探針對於該射束之入射角的敏感性,因為相較於正面(面向該射束源)所接收的,被該等元件之側面接收的任何粒子為最少。例如,該等元件可具有實質方形或圓形橫截面,或如果寬度大於厚度時為矩形。(元件的寬度界定為陣列平面中與長形方向垂直的維度)。有實質平坦表面的條帶元件特別較佳,因為相較於例如圓形接線,這會減少回散射的程度。 Advantageously, the elongate conductive elements have a width in the plane of the array that is equal to or greater than their thickness in a direction perpendicular to the array. This minimizes the sensitivity of the probes to the angle of incidence of the beam because any particles received by the sides of the elements are minimal compared to the front side (facing the beam source). For example, the elements can have a substantially square or circular cross section or be rectangular if the width is greater than the thickness. (The width of the element is defined as the dimension in the array plane that is perpendicular to the lengthwise direction). A strip element having a substantially flat surface is particularly preferred because it reduces the degree of backscattering compared to, for example, circular wiring.

該等長形導電元件的寬度對於測量射束性質的精度會有影響。如果各個元件的寬度等於或大於該射束的寬度,則不可能演繹出關於該射束之強度輪廓的任何資訊,然而該射束的寬度仍可測量。因此,最好各個長形導電元件在該陣列之平面中的寬度小於該帶電粒子束在該陣列平面的直徑,在該帶電粒子束之該直徑的三分之一至三分之二之間為較佳。元件愈窄,則可測量射束輪廓的解析度愈高。不過,實務上,如果元件太窄,則在被射束照射時容易因過熱而失效。在要進行加工之平面(以及探針組件應設置於其中)的典型射束寬度約為0.5毫米,因此在較 佳實施例中,該等元件各有5至200微米範圍的寬度。所有元件的寬度不必相同,但是相同為較佳以避免在訊號處理時需要考慮到此事。 The width of the elongate conductive elements has an effect on the accuracy of measuring beam properties. If the width of each element is equal to or greater than the width of the beam, it is not possible to deduct any information about the intensity profile of the beam, however the width of the beam is still measurable. Therefore, it is preferred that the width of each elongate conductive element in the plane of the array is less than the diameter of the charged particle beam in the plane of the array, between one third and two thirds of the diameter of the charged particle beam. Preferably. The narrower the component, the higher the resolution of the beam profile can be measured. However, in practice, if the component is too narrow, it is liable to fail due to overheating when irradiated by the beam. The typical beam width of the plane to be machined (and the probe assembly should be placed in it) is about 0.5 mm, so In a preferred embodiment, the elements each have a width in the range of 5 to 200 microns. The widths of all components do not have to be the same, but the same is preferred to avoid this need to be taken into account during signal processing.

為了離散地接收來自各個元件的電訊號以及可區別該等電訊號,在沿著測量路徑移動時,該射束在任一時刻應只與一個元件交叉。因此,較佳地,該等至少兩個長形導電元件至少沿著彼等的長度之一部份互相隔開的距離至少等於(大於為較佳)該帶電粒子束在該陣列平面的直徑。此部份的長度也應至少等於或大於該射束直徑藉此可適應該射束的全寬而不與任何其他元件交叉。因此,在較佳的情形下,該等至少兩個長形導電元件至少沿著彼等的長度之一部份互相隔開至少有0.5毫米,至少1毫米為更佳。 In order to discretely receive electrical signals from the various components and to distinguish the electrical signals, the beam should only intersect one element at any one time as it moves along the measurement path. Accordingly, preferably, the at least two elongate conductive elements are spaced apart from one another by at least one of their lengths by a distance at least equal to (greater than preferably) the diameter of the charged particle beam in the plane of the array. The length of this portion should also be at least equal to or greater than the beam diameter whereby the full width of the beam can be accommodated without intersecting any other elements. Accordingly, in preferred embodiments, the at least two elongate conductive elements are spaced apart from each other by at least 0.5 mm, preferably at least 1 mm, at least along one of their lengths.

在一特別較佳實作中,各個探針包括一框體經組配成在橫越由該框體界定之一孔口的至少兩個點處支撐該等長形導電元件。該框體可能或不完全圍封該孔口。藉由以此方式提供該等元件的支撐,使得能夠使用較窄及較不強健的元件,因為不要求該等元件有自我支撐性。在一有利具體實施例中,該框體包括一管部(tube section),例如套環,圓柱形管部為較佳,該等長形導電元件經配置成橫越該管部的(平坦)一端或兩端。該(等)傳導構件可纏繞該框體以形成由有不同長形方向之元件組成的所欲配置。 In a particularly preferred implementation, each of the probes includes a frame that is configured to support the elongate conductive elements at at least two points across an aperture defined by the frame. The frame may or may not completely enclose the aperture. By providing support for such elements in this manner, it is possible to use narrower and less robust elements, as these elements are not required to be self-supporting. In an advantageous embodiment, the frame comprises a tube section, such as a collar, preferably a cylindrical tube portion, the elongate conductive elements being configured to traverse the tube (flat) One or both ends. The (etc.) conductive member can be wrapped around the frame to form a desired configuration consisting of elements having different elongate orientations.

較佳地,該框體包括一導電部份經組配成使該等至少兩個長形導電元件連接至與該偵測模組連接的 一電路。這提供簡單可靠的手段用以實現各個探針中之所有元件的電氣連接,以及使它們連接至該偵測模組。 Preferably, the frame body includes a conductive portion that is assembled to connect the at least two elongated conductive elements to the detecting module. a circuit. This provides a simple and reliable means of electrically connecting all of the components in each probe and connecting them to the detection module.

該等探針的配置可根據遍及該陣列的任何所欲布局,但是一般而言,最好該等多個探針的配置係根據遍及該陣列的一規則網格(例如,正交,六角形、等等。),以及最好包括在該帶電粒子束產生器之軸線的一探針,藉此可測量工作區上在規則地隔開的一系列位置處的射束性質。不過,在一些情形下,當論及機器是專用於特定作業時,最好根據一些其他方案來配置該等探針以便測量對於該作業是特別重要之位置的射束性質。 The configuration of the probes can be based on any desired layout throughout the array, but in general, preferably the configuration of the plurality of probes is based on a regular grid throughout the array (eg, orthogonal, hexagonal) And so on, and preferably a probe included on the axis of the charged particle beam generator, whereby the beam properties at a regularly spaced series of locations on the working area can be measured. However, in some cases, when it is said that the machine is dedicated to a particular job, it is preferred to configure the probes according to some other scheme to measure the beam properties at locations that are particularly important for the job.

較佳地,該片框包括一板子具有該等多個探針設置於其中的多個孔口,該板子最好導電以及視需要經組配成提供一電氣連接於該等探針之間以及連接至該偵測模組的一電路。該探針陣列位於實質垂直於該帶電粒子束產生器之該軸線的一平面中為較佳。 Preferably, the frame comprises a plate having a plurality of apertures in which the plurality of probes are disposed, the plate preferably being electrically conductive and optionally assembled to provide an electrical connection between the probes and A circuit connected to the detection module. Preferably, the array of probes is located in a plane substantially perpendicular to the axis of the charged particle beam generator.

該等偵得訊號表明該射束的性質,因此與電壓、電流或時間閥值或其類似者相比,可“未經加工”地使用。不過,最好該系統更包括一訊號處理器適合基於該等偵得電訊號及射束測量路徑的知識來計算射束性質。算出的性質可輸出給該系統的使用者,例如藉由顯示於監測器上或其類似者,或以其他方式使用它。 These detected signals indicate the nature of the beam and are therefore "unprocessed" as compared to voltage, current or time thresholds or the like. Preferably, however, the system further includes a signal processor adapted to calculate beam properties based on the knowledge of the detected electrical signals and beam measurement paths. The calculated properties can be output to the user of the system, for example by being displayed on a monitor or the like, or otherwise using it.

在特別較佳的實施例中,該訊號處理器適合計算在至少一探針位置處該射束在至少兩個方向的寬度,其係基於來自該各個探針之該等至少兩個長形導電元 件的該等偵得電訊號,以及該射束橫越該等元件的速度知識。例如,各個訊號的總持續時間會對應至該射束橫越各個元件的時間以及該射束速度的給定知識,這可轉換成射束在該時間所行進的距離。這會對應至射束寬度加上元件寬度(在測量路徑的方向),這是已知,藉此允許計算在與該元件之長形方向垂直之方向的射束寬度。 In a particularly preferred embodiment, the signal processor is adapted to calculate a width of the beam in at least two directions at at least one probe position based on the at least two elongated conductive shapes from the respective probes yuan The detected electrical signals of the pieces, and the knowledge of the speed at which the beam traverses the elements. For example, the total duration of each signal will correspond to the time the beam traverses the various elements and the given knowledge of the beam speed, which can be converted into the distance the beam travels at that time. This would correspond to the beam width plus the element width (in the direction of the measurement path), which is known, thereby allowing calculation of the beam width in a direction perpendicular to the elongate direction of the element.

也較佳地,該訊號處理器可適合計算在至少一探針位置處該射束在至少兩個方向的強度輪廓,其係基於來自該各個探針之該等至少兩個長形導電元件的該等偵得電訊號,以及該射束的寬度知識。例如,在該射束橫越一元件時,該偵得訊號的大小會取決於該射束在該元件長形方向的寬度以及任何射束強度變化。由於如上述該射束的寬度可獨立測量,隨後可計算該射束在與該元件長形方向垂直之方向的強度輪廓。 Also preferably, the signal processor is adapted to calculate an intensity profile of the beam in at least two directions at at least one probe position based on the at least two elongate conductive elements from the respective probes These detect the electrical signal, as well as the knowledge of the width of the beam. For example, when the beam traverses an element, the magnitude of the detected signal will depend on the width of the beam in the direction of the element's elongate shape and any beam intensity variations. Since the width of the beam can be measured independently as described above, the intensity profile of the beam in a direction perpendicular to the elongate direction of the element can then be calculated.

在另一較佳具體實施例中,該訊號處理器適合計算在至少一探針位置處該射束在兩個維度的一強度圖,其係藉由層析重建(tomographic reconstruction)來自該各個探針之該等至少兩個長形導電元件的該等偵得電訊號。這可用習知重建方法達成,例如使用拉冬反函數(inverse Radon function)以解卷(de-convolute)來自一探針內之所有元件的收集訊號。裝設於各個探針的元件愈多,可實現的解析度愈好。 In another preferred embodiment, the signal processor is adapted to calculate an intensity map of the beam in two dimensions at at least one probe position from the respective probes by tomographic reconstruction The detected electrical signals of the at least two elongated conductive elements of the pin. This can be accomplished using conventional reconstruction methods, such as using an inverse Radon function to de-convolute the collected signals from all of the components within a probe. The more components that are mounted on each probe, the better the resolution that can be achieved.

較佳地,該訊號處理器適合計算在該等多個探針位置中之每一者處該射束在至少兩個方向的性質, 最好為該射束之該寬度,該射束之該強度輪廓及/或該射束之該強度圖。 Preferably, the signal processor is adapted to calculate a property of the beam in at least two directions at each of the plurality of probe positions, Preferably, the width of the beam, the intensity profile of the beam and/or the intensity map of the beam.

如上述,實務上,該射束可能遭受偏折偏差,這意謂該(等)偏折單元引導射束所到的實際位置與指示的匹配不精確。如果這沒有被識出,例如由於該射束以與預期不同的某一角度橫越各個元件,甚至(在極端情形下),以某一不同的順序,該等測得性質可能因而失真。因此,在一較佳具體實施例中,該訊號處理器更適合(在計算該射束之該等性質前),在至少一探針位置處,偵測該射束的任何偏折偏差,其係基於來自該各個探針之該等至少兩個長形導電元件的相鄰偵得電訊號之間的間隔,以及產生及輸出一偏折偏差回饋訊號給該帶電粒子束產生器以藉此修正該偏折偏差。基於預定測量路徑及探針幾何來得知各個訊號之間的預期(時間)間隔為較佳,至少在成對相鄰訊號的相對間隔(如果不準確地知道射束速度的話)方面,或在絕對間隔(如果已知射束速度)方面。該訊號處理器因此可比較在一訊號至下一個的實際間隔,以及用此與預期間隔比較。如果匹配,得知該射束遵循預期測量路徑以及可做性質測量,如上述。如果訊號之間的(絕對或者是相對)實際間隔與預期的不匹配,這表明有偏折偏差。該訊號處理器輸出一訊號給該帶電粒子束產生器以致能該射束偏折的修正藉此移置該射束的測量路徑使得它對齊該探針。在一特別較佳具體實施例中,該訊號產生器完成此校準係藉由:(a)在至少一探針位置處,偵測該射束的任何偏折偏 差,其係基於來自該各個探針之該等至少兩個長形導電元件的相鄰偵得電訊號之間的間隔;(b)產生及輸出一偏折偏差回饋訊號給該帶電粒子束產生器以藉此修正該射束在步驟(a)算出的任何偏折偏差,然後基於在修正任何偏折偏差後輸出的偵得電訊號,可算出該射束的性質。 As described above, in practice, the beam may suffer from a deflection deviation, which means that the actual position of the (equal) deflection unit guiding the beam is inaccurately matched to the indication. If this is not known, for example because the beam traverses the individual elements at an angle different from what is expected, even (in extreme cases), the measured properties may be distorted in a different order. Therefore, in a preferred embodiment, the signal processor is more suitable (before calculating the properties of the beam) to detect any deflection deviation of the beam at at least one probe position, And generating and outputting a deflection deviation feedback signal to the charged particle beam generator based on the interval between adjacent detected electrical signals of the at least two elongated conductive elements from the respective probes This deflection deviation. It is preferred to know the expected (time) interval between the signals based on the predetermined measurement path and the probe geometry, at least in the relative interval of the pair of adjacent signals (if the beam speed is not accurately known), or in absolute Interval (if beam speed is known). The signal processor can therefore compare the actual interval from one signal to the next and use this to compare with the expected interval. If it matches, it is known that the beam follows the expected measurement path and can be measured for properties, as described above. If the (absolute or relative) actual interval between the signals does not match the expected, this indicates a bias deviation. The signal processor outputs a signal to the charged particle beam generator to enable correction of the beam deflection to thereby displace the measurement path of the beam such that it aligns the probe. In a particularly preferred embodiment, the signal generator performs the calibration by: (a) detecting at least one probe position, detecting any deflection of the beam. Poor, based on the spacing between adjacent detected electrical signals of the at least two elongated conductive elements from the respective probes; (b) generating and outputting a bias deviation feedback signal to the charged particle beam generation In order to correct any deviation deviation calculated by the beam in step (a), the properties of the beam can be calculated based on the detected electrical signal output after correcting any deviation deviation.

在一特別較佳的情形下,此技術的實施係使用一種探針構造具有至少兩個長形導電元件經配置成彼等的長形方向從它們的一交叉點徑向延伸以及以該交叉點為中心等角地互相隔開。該測量路徑係經組態成包括橫越該探針之至少兩個(全部為較佳)長形導電元件的至少一線段,該線段為實質圓形或遵循一實質圓弧以及定中心於該等元件之交叉點的位置上,該等長形方向從該交叉點延伸。結果,如果該射束準確地遵循該測量路徑,來自該探針之該等元件的偵得訊號之間的時間間隔應相等。同樣地,在來自該探針之該等元件的偵得電訊號中之相鄰兩者有任何間隔差異則表明有一偏折偏差。例如,該路徑可能定中心不正確或不夠圓,如果不修正,這會造成射束以未知角度與該等元件交叉。在此情形下,較佳地,該偏折偏差的修正係藉由調整該射束的偏折直到來自該探針之該等元件的偵得電訊號中之相鄰兩者的間隔有實質等於零的差異。 In a particularly preferred aspect, the technique is practiced using a probe configuration having at least two elongate conductive elements configured such that their elongate directions extend radially from their intersection and at the intersection They are separated from each other at equal angles. The measurement path is configured to include at least one line segment traversing at least two (all preferably preferred) elongated conductive elements of the probe, the line segment being substantially circular or following a substantial arc and centered on the At the position of the intersection of the elements, the elongate directions extend from the intersection. As a result, if the beam accurately follows the measurement path, the time intervals between the detected signals from the elements of the probe should be equal. Similarly, any difference in the spacing between adjacent ones of the detected electrical signals from the elements of the probe indicates a bias deviation. For example, the path may be centered incorrectly or not round enough, and if not corrected, this would cause the beam to intersect the elements at an unknown angle. In this case, preferably, the correction of the deflection deviation is performed by adjusting the deflection of the beam until the interval between adjacent ones of the detected electrical signals from the components of the probe is substantially equal to zero. The difference.

上述技術致能修正任何偏折偏差從而校準該射束產生器以及在操作員不介入下由該系統自動完成為較佳。例如,可實施回饋演算法以基於該回饋訊號來調整偏折控制訊號以便修正偵測到的任何偏差。 The above technique enables correction of any deflection deviation to calibrate the beam generator and is preferably done automatically by the system without operator intervention. For example, a feedback algorithm can be implemented to adjust the deflection control signal based on the feedback signal to correct any deviation detected.

該系統的輸出可用來提供診斷資訊或保證給使用者,但是在較佳具體實施例中,另外或替換地,該系統更包括一回饋模組用以產生及供應一回饋訊號給該帶電粒子束產生器以藉此基於該系統所測得的該等性質來調整該帶電粒子束的該等性質。例如,基於該射束之測得寬度(直徑)或形狀的回饋可用來調整由該射束產生器實現的射束焦點。再者,通過提供適當的回饋演算法,這可由該系統自動地完成。 The output of the system can be used to provide diagnostic information or guarantee to the user, but in a preferred embodiment, additionally or alternatively, the system further includes a feedback module for generating and supplying a feedback signal to the charged particle beam. The generator thereby adjusts the properties of the charged particle beam based on the properties measured by the system. For example, feedback based on the measured width (diameter) or shape of the beam can be used to adjust the beam focus achieved by the beam generator. Again, this can be done automatically by the system by providing an appropriate feedback algorithm.

應注意,根據本發明的第一態樣,該系統不需包括該帶電粒子束產生器。例如,該系統可加裝至現有射束產生器,例如電子槍。根據本發明的第二態樣,提供一種設備,包括一帶電粒子束產生器與根據本發明第一態樣的系統,其係經組配成測量由該帶電粒子束產生器輸出之帶電粒子束的性質。該帶電粒子束產生器最好包括一帶電粒子源,一粒子加速單元用於沿著一軸線加速來自該粒子源之帶電粒子以形成一帶電粒子束,一初級偏折單元適合使該帶電粒子束偏折遠離該軸線以及一初級控制器適合輸出一初級控制訊號用於控制該初級偏折單元所施加的偏折。 It should be noted that in accordance with a first aspect of the invention, the system need not include the charged particle beam generator. For example, the system can be retrofitted to an existing beam generator, such as an electron gun. According to a second aspect of the present invention, there is provided apparatus comprising a charged particle beam generator and a system according to the first aspect of the present invention, configured to measure a charged particle beam output by the charged particle beam generator The nature. The charged particle beam generator preferably includes a charged particle source, a particle acceleration unit for accelerating charged particles from the particle source along an axis to form a charged particle beam, and a primary deflection unit adapted to cause the charged particle beam The deflection is remote from the axis and a primary controller is adapted to output a primary control signal for controlling the deflection applied by the primary deflection unit.

揭示於本文的診斷系統特別適合使用於材料加工應用系統,在此係藉由施加該帶電粒子束來修改工件或材料(包括氣體材料)。因此,本發明的第三態樣更提供一種材料加工工具,包括如上述的設備。在特別較佳的具體實施例中,該工具為下列中之一者: The diagnostic system disclosed herein is particularly suitable for use in material processing applications where the workpiece or material (including gaseous materials) is modified by applying the charged particle beam. Accordingly, a third aspect of the present invention further provides a material processing tool comprising the apparatus as described above. In a particularly preferred embodiment, the tool is one of the following:

一電子束焊接工具,該帶電粒子束適合用來焊接材料;一加層製造工具,該帶電粒子束適合用來處理粉末材料,融合彼等為較佳;一固化工具,該帶電粒子束適合用來固化一工件;一切割工具,該帶電粒子束適合用來切割材料;一熔化或氣化工具,該帶電粒子束適合用來熔化及/或氣化材料;該工具為一氣體處理工具,該帶電粒子束適合用來處理氣體物質,燃燒煙霧為較佳;一消毒工具,該帶電粒子束適合用來消毒固體或液體;一鑽孔工具,該帶電粒子束適合用於一工件之鑽孔;或一材料紋理化工具,該帶電粒子束適合用來形成數個突出物或結構於一工件上。 An electron beam welding tool, the charged particle beam is suitable for welding materials; a layered manufacturing tool, the charged particle beam is suitable for processing powder materials, and fusion is preferred; a curing tool, the charged particle beam is suitable for To cure a workpiece; a cutting tool, the charged particle beam is suitable for cutting material; a melting or gasification tool, the charged particle beam is suitable for melting and/or gasifying the material; the tool is a gas processing tool, The charged particle beam is suitable for treating gaseous substances, and combustion fumes are preferred; a disinfecting tool, the charged particle beam is suitable for disinfecting solid or liquid; and a drilling tool, the charged particle beam is suitable for drilling a workpiece; Or a material texturing tool suitable for forming a plurality of protrusions or structures on a workpiece.

本發明的第四態樣提供一種測量由帶電粒子束產生器輸出的帶電粒子束之性質的方法,該方法包括:提供一探針組件,其係包括在一片框上橫越一平面地排成陣列的多個探針,各個探針包括至少兩個長形導電元件,經配置成彼等的各自長形方向在該陣列之平面中互相形成一非零角度; 控制該帶電粒子束之該偏折以遵循一測量路徑依序橫越該等探針中之至少一者的該等長形導電元件中之至少兩個;以及偵測由各個探針之該等導電元件依序在與該帶電粒子束交叉時輸出的電訊號,來自各個探針的該等偵得電訊號表明該帶電粒子束在指向該各個探針之該位置時的性質。 A fourth aspect of the invention provides a method of measuring the properties of a charged particle beam output by a charged particle beam generator, the method comprising: providing a probe assembly comprising arranging across a plane on a frame a plurality of probes of the array, each probe comprising at least two elongate conductive elements configured such that their respective elongate directions form a non-zero angle with each other in the plane of the array; Controlling the deflection of the charged particle beam to sequentially traverse at least two of the elongate conductive elements of at least one of the probes in accordance with a measurement path; and detecting the respective probes The electrical signals are sequentially output by the conductive elements as they intersect the charged particle beam, and the detected electrical signals from the respective probes indicate the nature of the charged particle beam when directed at the location of the respective probes.

如以上在說明本發明第一態樣時所述,此一技術致能測量射束在每個探針位置的性質,例如它的寬度及強度輪廓。該方法可用本發明第一態樣的系統實施而且可包括對應至上述系統中之任一特徵的較佳特徵及步驟。 As described above in describing the first aspect of the invention, this technique enables measurement of the properties of the beam at each probe location, such as its width and intensity profile. The method can be implemented with a system in accordance with a first aspect of the invention and can include preferred features and steps corresponding to any of the features described above.

根據本發明的第五態樣,提供一種探針,用以測量帶電粒子束的性質,該探針包括界定一孔口的一框體以及由該框體支撐及橫越該孔口的至少兩個長形導電元件係經配置成彼等的各自長形方向在該框體位於其中的平面中互相形成一非零角度。 According to a fifth aspect of the present invention, there is provided a probe for measuring properties of a charged particle beam, the probe comprising a frame defining an aperture and at least two supported by the frame and traversing the aperture The elongate conductive elements are configured such that their respective elongate directions form a non-zero angle with each other in a plane in which the frame is located.

在一特別較佳具體實施例中,本發明第一態樣的系統可實作成有多個這種探針。如前述,藉由配置該等元件於橫越一孔口的一框體上,該等元件有支撐(在至少兩個點為較佳),這允許使用較薄及較不強健的元件。接著,這改善測量值的解析度。該至少兩個長形導電元件彼此互相電氣接觸為較佳,以及視需要互相整合。該等元件可在該框體的不同側邊上橫越該孔口,但是彼此位於同一個平面為最佳。 In a particularly preferred embodiment, the system of the first aspect of the invention can be implemented with a plurality of such probes. As previously mentioned, by arranging the elements on a frame that traverses an aperture, the elements are supported (preferred at at least two points), which allows for the use of thinner and less robust elements. This then improves the resolution of the measured values. Preferably, the at least two elongate conductive elements are in electrical contact with each other and are integrated with one another as desired. The elements may traverse the aperture on different sides of the frame, but are preferably located in the same plane.

該探針可具有以上在說明本發明第一態樣時提及的任一較佳特徵。 The probe may have any of the preferred features mentioned above in describing the first aspect of the invention.

根據本發明的第六態樣,提供一種用於測量由帶電粒子束產生器輸出的帶電粒子束之性質的裝置,其係包括:一探針組件,其係包括在一片框上橫越一平面地排成陣列的多個探針,各個探針包括至少兩個長形導電元件,經配置成彼等的各自長形方向在該陣列之平面中互相形成一非零角度;一射束偏折單元,適合將該帶電粒子束偏折成沿著一測量路徑移動;其中,該射束偏折單元在該探針組件上用設置於其間的一支撐組件支撐,該射束偏折單元經定向成,在使用時,藉由該射束偏折單元,該帶電粒子束可偏折遍及該探針組件。 According to a sixth aspect of the invention, there is provided apparatus for measuring the properties of a charged particle beam output by a charged particle beam generator, comprising: a probe assembly comprising a plane across a frame Aligning a plurality of probes in an array, each probe comprising at least two elongate conductive elements configured such that their respective elongate directions form a non-zero angle with each other in the plane of the array; a beam deflection a unit adapted to deflect the charged particle beam to move along a measurement path; wherein the beam deflection unit is supported on the probe assembly with a support assembly disposed therebetween, the beam deflection unit being oriented In use, the charged particle beam can be deflected throughout the probe assembly by the beam deflection unit.

以此方式,該探針組件及次級偏折單元可簡單地裝入有帶電粒子束產生器的機器,而不需要修改該機器。該射束偏折單元在使用時連接至一控制器,例如上述射束偏折控制模組,以及接收輸入,例如上述次級射束控制訊號,以便控制該射束偏折。該探針組件使用時連接至如前述的一偵測模組,其適合偵測由該等探針輸出的電訊號。較佳地,該探針組件、該射束偏折單元及該支撐組件當作一個單元供給使得安裝只需要以正確地對準的方式把該單元放進機器,以及完成適當的訊號修正。在其他情形下,該裝置可當作一個包括探針組件、偏折線圈及支撐組件的套件(kit)供給,以及就地裝配。 In this way, the probe assembly and the secondary deflection unit can be simply loaded into a machine with a charged particle beam generator without the need to modify the machine. The beam deflecting unit is coupled to a controller, such as the beam deflection control module, and a receiving input, such as the secondary beam steering signal, in use to control the beam deflection. The probe assembly is connected to a detection module as described above, which is suitable for detecting electrical signals output by the probes. Preferably, the probe assembly, the beam deflecting unit and the support assembly are supplied as a unit such that the mounting only requires the unit to be placed into the machine in a properly aligned manner and the appropriate signal correction is accomplished. In other cases, the device can be supplied as a kit that includes a probe assembly, a deflection coil, and a support assembly, as well as a local assembly.

該裝置可使用於本發明第一態樣的系統以 提供該探針組件以及實現該射束偏折(至少部份地)。該探針組件可具有以上在說明本發明第一態樣時提及的任一特徵,以及該等探針可經構造成含有上述任一特徵。該射束偏折單元可包括一射束偏折線圈。 The device can be used in the system of the first aspect of the invention The probe assembly is provided and the beam deflection is achieved (at least in part). The probe assembly can have any of the features mentioned above in describing the first aspect of the invention, and the probes can be configured to contain any of the features described above. The beam deflection unit can include a beam deflection coil.

較佳地,該支撐組件包括一或更多支撐臂連接於該探針組件與該射束偏折單元之間。有利的是,該等構件的配置使得該射束偏折單元之該軸線實質垂直於該探針組件之該平面。 Preferably, the support assembly includes one or more support arms coupled between the probe assembly and the beam deflecting unit. Advantageously, the members are configured such that the axis of the beam deflection unit is substantially perpendicular to the plane of the probe assembly.

1‧‧‧材料加工工具 1‧‧‧Material Processing Tools

2‧‧‧真空工作室 2‧‧‧vacuum studio

3‧‧‧工作台/工件台 3‧‧‧Workbench/workpiece table

4‧‧‧底座 4‧‧‧Base

5‧‧‧粉末床 5‧‧‧Flour bed

5a‧‧‧層 5a‧‧ layer

10‧‧‧帶電粒子束產生器 10‧‧‧Charged particle beam generator

11‧‧‧控制器 11‧‧‧ Controller

12‧‧‧數位至類比轉換器 12‧‧‧Digital to analog converter

15‧‧‧電子槍 15‧‧‧Electronic gun

16‧‧‧帶電粒子源 16‧‧‧Powered particle source

17‧‧‧加速器 17‧‧‧Accelerator

18‧‧‧偏折手段 18‧‧‧ deflected means

20‧‧‧射束診斷系統 20‧‧·beam diagnostic system

21‧‧‧探針組件 21‧‧‧ probe assembly

21‧‧‧訊號導管 21‧‧‧Signal catheter

21a‧‧‧屏蔽引線 21a‧‧‧Shielded leads

22‧‧‧偵測模組 22‧‧‧Detection module

22a‧‧‧關聯模組 22a‧‧‧Association module

23‧‧‧射束偏折控制模組 23‧‧‧Ball deflection control module

23a‧‧‧次級偏折單元 23a‧‧‧Secondary deflection unit

24‧‧‧訊號處理器或電腦 24‧‧‧ Signal Processor or Computer

25‧‧‧記憶體 25‧‧‧ memory

26、26a‧‧‧監測模組 26, 26a‧‧‧Monitoring module

26b‧‧‧回饋模組 26b‧‧‧Feedback Module

27‧‧‧片框/板子/安裝板/陣列板 27‧‧‧Sheet/board/mounting board/array board

28‧‧‧線路 28‧‧‧ lines

29a‧‧‧電阻器 29a‧‧‧Resistors

29b‧‧‧儀表 29b‧‧‧ instruments

30、30’、30”、30’’’、30IIIV、30a、30b、30c‧‧‧探針 30, 30', 30", 30''', 30IIIV, 30a, 30b, 30c‧ ‧ probes

31、31a‧‧‧框體 31, 31a‧‧‧ frame

31b‧‧‧陶瓷夾持具 31b‧‧‧Ceramic holders

32、33、33’、33a、33b、34、34’、34a、34b‧‧‧元件 32, 33, 33', 33a, 33b, 34, 34', 34a, 34b‧‧‧ components

36、36a‧‧‧標記元件 36, 36a‧‧‧Marking components

38‧‧‧交叉點 38‧‧‧ intersection

39‧‧‧引線 39‧‧‧Leader

40a、40b、40c‧‧‧觸發位置 40a, 40b, 40c‧‧‧ trigger position

50‧‧‧裝置 50‧‧‧ device

51‧‧‧支撐組件 51‧‧‧Support components

A‧‧‧槍桿軸線 A‧‧‧ gun axis

B‧‧‧射束 B‧‧·beam

BW‧‧‧射束寬度 BW‧‧·beam width

B(i)、B(ii)‧‧‧位置 B(i), B(ii)‧‧‧ position

C‧‧‧區域 C‧‧‧ area

D‧‧‧距離 D‧‧‧Distance

F-F’‧‧‧正常位置 F-F’‧‧‧Normal position

G‧‧‧接地 G‧‧‧ Grounding

Lx、Ly‧‧‧間隔 Lx, Ly‧‧‧ interval

lx、ly‧‧‧長度 Lx, ly‧‧‧ length

MP‧‧‧測量路徑 MP‧‧‧Measurement path

P1‧‧‧初級射束路徑 P1‧‧‧ primary beam path

P2‧‧‧次級射束路徑 P2‧‧‧second beam path

S‧‧‧空間 S‧‧‧ Space

T、T33a、T34a‧‧‧持續時間 T, T33a, T34a‧‧‧ duration

T33b、T34b‧‧‧訊號持續時間 T33b, T34b‧‧‧ signal duration

W‧‧‧元件寬度 W‧‧‧Component width

x、y、x30a、x30b、y30a、y30b‧‧‧方向 x, y, x30a, x30b, y30a, y30b‧‧‧ directions

θ‧‧‧角度 Θ‧‧‧ angle

(1)至(4)‧‧‧訊號 (1) to (4) ‧ ‧ signals

此時參考附圖描述本發明用以測量帶電粒子束之性質的系統及方法實施例。 Embodiments of the system and method for measuring the properties of a charged particle beam of the present invention are now described with reference to the accompanying drawings.

第1圖示意描述一示範材料加工工具,其係包括含有示範帶電粒子束產生器及根據本發明第一具體實施例之系統的設備;第2圖顯示一示範探針組件適合使用於第1圖所示的系統,以及示意說明適合用來收集來自該組件之電訊號的電路;第3圖說明一示範探針適合使用於第2圖所示的探針組件;第4圖的示意圖根據一具體實施例說明第2圖所示的探針組件中之一部份的探針元件的電氣連接;第5圖示意顯示第2圖探針組件的一部份,其上描繪射束的一示範測量路徑;第6圖顯示適合使用於第5圖所示的探針組件的示範 長形傳導元件之一部份,以及在一具體實施例中,射束橫越該元件的位置;第7圖描繪可偵測自第5圖長形傳導元件中之一者的示範電訊號;第8(a)圖示意描繪在一具體實施例中可偵測自第5圖探針組件的一示範系列之電訊號,第8(b)圖及第8(c)圖說明在兩個不同探針位置的對應射束形狀;第9(a)圖示意說明在另一具體實施例中射束通過示範長形傳導元件的通道(passage),第9(b)圖描繪由元件輸出的示範電訊號以回應與該射束的交叉;第10圖示意描述一具體實施例中的示範初級射束路徑(第10(a)圖),次級射束路徑(第10(b)圖),以及所得測量路徑(第10c圖);第11圖示意描述另一具體實施例中的示範初級射束路徑(第11(a)圖),次級射束路徑(第11(b)圖),以及所得測量路徑(第11c圖);第12圖顯示根據本發明第二具體實施例之設備的選定構件;第13圖示意描述一示範材料加工工具,其係包括含有示範帶電粒子束產生器及根據本發明第三具體實施例之系統的設備;第13(a)圖示意描述根據本發明另一具體實施例的裝置;第14(a)圖根據本發明第四具體實施例說明形成探針 組件之一部份的兩個探針,該探針組件形成系統之一部份,有射束的示範測量路徑繪製於其上,第14(b)圖顯示可偵測之示範電訊號的對應曲線;第15(a)圖顯示根據本發明又一具體實施例之探針的選定構件,第15(b)圖顯示同一個探針的額外構件;第16(a)圖與第16(b)圖示意描述根據本發明具體實施例的另兩個示範探針,其上描繪射束的示範測量路徑;第17圖根據本發明之一具體實施例顯示另一示範探針;以及第18圖的曲線描繪可偵測自如第15圖所示探針之電訊號的示範序列。 Figure 1 schematically depicts an exemplary material processing tool comprising an apparatus comprising an exemplary charged particle beam generator and a system in accordance with a first embodiment of the present invention; and Figure 2 shows an exemplary probe assembly suitable for use in the first The system shown in the figure, and the circuit for illustrating the electrical signals suitable for collecting the components; FIG. 3 illustrates an exemplary probe suitable for use in the probe assembly shown in FIG. 2; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An electrical connection of a probe element of one of the probe assemblies shown in FIG. 2 is illustrated; FIG. 5 is a schematic view showing a portion of the probe assembly of FIG. 2, on which a beam is depicted Demonstration measurement path; Figure 6 shows an example suitable for use with the probe assembly shown in Figure 5 a portion of the elongated conductive element, and in one embodiment, the beam traversing the position of the element; Figure 7 depicts an exemplary electrical signal detectable from one of the elongated conductive elements of Figure 5; Figure 8(a) schematically depicts an exemplary series of electrical signals detectable from the probe assembly of Figure 5 in a particular embodiment, and Figures 8(b) and 8(c) illustrate two Corresponding beam shape for different probe positions; Figure 9(a) schematically illustrates the passage of the beam through the exemplary elongated conductive element in another embodiment, and Figure 9(b) depicts the output by the component Exemplary telegram in response to intersection with the beam; Figure 10 schematically depicts an exemplary primary beam path (Fig. 10(a)), secondary beam path (10(b)) in a particular embodiment Figure), and the resulting measurement path (Fig. 10c); Fig. 11 schematically depicts an exemplary primary beam path (Fig. 11(a)), secondary beam path (11th (b)) in another embodiment Figure), and the resulting measurement path (Fig. 11c); Fig. 12 shows selected components of the apparatus in accordance with the second embodiment of the present invention; and Fig. 13 schematically depicts an exemplary material processing tool It comprises an apparatus comprising an exemplary charged particle beam generator and a system according to a third embodiment of the invention; Figure 13 (a) schematically depicts a device according to another embodiment of the invention; Figure 14(a) Forming a probe according to a fourth embodiment of the present invention Two probes in one part of the component, the probe assembly forming part of the system, on which an exemplary measurement path of the beam is drawn, and Figure 14(b) shows the correspondence of the detectable exemplary electrical signal Curve; Figure 15(a) shows selected components of the probe according to yet another embodiment of the present invention, and Figure 15(b) shows additional components of the same probe; Figures 16(a) and 16(b) The figure schematically depicts two other exemplary probes on which an exemplary measurement path of the beam is depicted; FIG. 17 shows another exemplary probe in accordance with an embodiment of the present invention; and 18th The graph of the graph depicts an exemplary sequence of electrical signals that can be detected from the probe shown in Figure 15.

以下說明大體聚焦於將會測量其性質之帶電粒子束為電子束的實施例。不過,應瞭解,所揭示之系統及方法同樣可用於陽離子射束。 The following description is directed to an embodiment that focuses generally on a charged particle beam that will measure its properties as an electron beam. However, it should be understood that the disclosed systems and methods are equally applicable to cation beams.

本發明的系統及方法在許多不同工業應用可用來診斷射束性質,包括例如材料的電子束焊接,離子束鑽孔,表面紋理化及其類似者。利用在大工作包絡(large working envelope)上面以各種入射角度偏折之粒子束的一特殊應用是添加式製造(additive manufacturing)。同樣地,本發明的系統及方法特別適合使用於添加式製造工具,而且以下說明會使用此實施例。不過,應瞭解,該等系統及方法可轉移到利用帶電粒子束的任何其他類型裝備。 The systems and methods of the present invention can be used to diagnose beam properties in a variety of different industrial applications including, for example, electron beam welding of materials, ion beam drilling, surface texturing, and the like. A particular application of particle beams that are deflected at various angles of incidence above a large working envelope is additive manufacturing. As such, the systems and methods of the present invention are particularly well suited for use in additive manufacturing tools, and the following description will use this embodiment. However, it should be understood that such systems and methods can be transferred to any other type of equipment that utilizes charged particle beams.

使用粒子束之添加式製造的一類形式描述 於美國專利第US-A-2012/0234671號而且使用高功率的射束,電子束為較佳,以製造複雜的物件。描述於第1圖的材料加工工具1實施例在此為美國專利第US-A-2012/0234671號所揭示的添加式製造工具,其係加入根據本發明第一具體實施例的射束診斷系統20,以及帶電粒子束產生器10,例如電子槍。 A type of formal description using additive manufacturing of particle beams In the U.S. Patent No. US-A-2012/0234671 and using a high power beam, an electron beam is preferred to produce complex articles. The material processing tool 1 described in FIG. 1 is an additive manufacturing tool disclosed in US Pat. No. US-A-2012/0234671, which is incorporated in the beam diagnostic system according to the first embodiment of the present invention. 20, and a charged particle beam generator 10, such as an electron gun.

如美國專利第US-A-2012/0234671號所述,工具1使用承載於工作台3上的粉末床(powder bed)5以在層5a中製造被偏折電子束B熔化的金屬物件。該裝備包括裝上電子槍15的真空工作室2。該電子槍包括帶電粒子源16,例如熱離子發射器(例如,加熱陰極)或電漿源,如揭示於世界專利第WO-A-2013/051296號者,加速器17,例如陽極,以及偏折手段18,例如磁性偏折線圈用以根據來自控制器11的指令來控制生成射束B的方向。在室2內,有粉末床5可經由底座4放低以允許製作各層,以及通常有數個粉末漏斗與一耙料系統(未圖示)以鋪開各層的粉末。 As described in US Pat. No. US-A-2012/0234671, the tool 1 uses a powder bed 5 carried on a table 3 to produce a metal object melted by the deflected electron beam B in the layer 5a. The equipment comprises a vacuum working chamber 2 equipped with an electron gun 15. The electron gun comprises a charged particle source 16, such as a thermal ion emitter (e.g., a heated cathode) or a plasma source, such as those disclosed in U.S. Patent No. WO-A-2013/051296, an accelerator 17, such as an anode, and a deflecting means. 18, for example a magnetic deflection coil for controlling the direction in which the beam B is generated in accordance with an instruction from the controller 11. Within chamber 2, a powder bed 5 can be lowered through base 4 to allow for the production of layers, and there are typically several powder funnels and a dip system (not shown) to spread the powder of each layer.

電子槍15通常有寬角度的偏折系統18使得達400毫米直徑的粉末床5可以約500毫米的工作距離定址。可定址構件的大小受限於射束偏折離開槍體軸線A的角度θ,這在沒有過多射束斑點失真(這會影響建造部份的品質)下可實現。為了準確地校準這種電子束3D列印機,必須描述射束斑點在粉末床5上方的性質。 The electron gun 15 typically has a wide angle deflection system 18 such that a powder bed 5 up to 400 mm in diameter can be addressed at a working distance of about 500 mm. The size of the addressable member is limited by the angle θ at which the beam deflects away from the gun body axis A, which is achievable without excessive beam spot distortion, which affects the quality of the construction portion. In order to accurately calibrate such an electron beam 3D printer, the nature of the beam spot above the powder bed 5 must be described.

系統20致能在校準過程期間測量遍及工作 區的射束性質以便達成此目的。系統20包括探針組件21,使用時,裝在機器的粉珠(powder bead)的正常位置F-F’。該機器通常存在適當的安裝點用以安裝習知校準板(亦即,有孔洞陣列的板子用來提供射束偏折的人工調整以確保準確)。探針組件21載有在工作區上隔開的探針陣列,各個探針經組態成致能在該位置之射束性質的測量,如以下所詳述的。來自探針組件21的訊號由訊號導管21(例如,一或更多電纜)輸出至偵測模組22,其適合在射束B橫越各個探針時擷取它所輸出的訊號。該射束用射束偏折控制模組23控制成沿著測量路徑移動,射束偏折控制模組23在此實施例中是用射束產生器15的數個偏折線圈18實作,然而也可設想替代技術,如下述。偵得訊號揭示射束B在各個探針位置的性質。例如,可觸發該射束偏折以及積分卡(scope card)收集訊號並且傳送資料給訊號處理器或電腦24供後處理及儲存用。通過同步,收集到的脈衝可與在裝有探針元件的粉末床上之各個位置的X、Y測量值關聯。 System 20 enables measurement throughout the calibration process The beam properties of the zone are used for this purpose. System 20 includes a probe assembly 21 that, when in use, is mounted in the normal position F-F' of the powder bead of the machine. The machine usually has a suitable mounting point for mounting a conventional calibration plate (i.e., a plate with an array of holes is used to provide manual adjustment of the beam deflection to ensure accuracy). The probe assembly 21 carries an array of probes spaced apart on the working area, each probe being configured to enable measurement of the beam properties at that location, as detailed below. The signal from probe assembly 21 is output by signal conduit 21 (e.g., one or more cables) to detection module 22, which is adapted to capture the signal it outputs as beam B traverses each probe. The beam is controlled to move along the measurement path by the beam deflection control module 23, which in this embodiment is implemented by a plurality of deflection coils 18 of the beam generator 15. Alternative techniques are also envisioned, as described below. The detected signal reveals the nature of beam B at each probe location. For example, the beam deflection can be triggered and the scope card collects the signal and transmits the data to the signal processor or computer 24 for post processing and storage. By synchronizing, the collected pulses can be correlated with X, Y measurements at various locations on the powder bed containing the probe elements.

系統20視需要也可包括關聯模組22a用於將各個偵得訊號歸屬於彼之起源的探針(以及,視需要探針內的元件,如下述),以及訊號處理器經組配成從原始訊號算出參數,例如射束寬度或強度輪廓。系統20也可包括記憶體用來提供關於射束在校準過程期間遵循之測量路徑的資訊及/或監測模組26a用於基於來自射束產生器之控制器11及/或射束偏折控制模組23的回饋來監測射束的及時位置。也可提供回饋模組26b用於產生及供給基於測得性質 的回饋訊號給射束產生器。以下會描述各個該等視需要構件。 The system 20 can also include, as needed, the associated module 22a for assigning each detected signal to the origin of the probe (and, if desired, the components within the probe, as described below), and the signal processor is configured to The original signal calculates parameters such as beam width or intensity profile. System 20 may also include memory for providing information regarding the measurement path that the beam follows during the calibration process and/or monitoring module 26a for controlling based on controller 11 and/or beam deflection from the beam generator The feedback from module 23 monitors the timely location of the beam. A feedback module 26b can also be provided for generating and supplying based on measured properties The feedback signal is given to the beam generator. Each of these as desired components will be described below.

將參考顯示於第2圖的示範探針組件來解釋探針組件21的操作原理。這包括片框27,例如板子,其係攜載在片框上排成陣列的多個探針30,呈規則網格排列為較佳。在第2圖中,為求圖示清楚,只標示其中3個探針30a、30b、30c,但是可見它在此實施例提供總共16個探針排列成4x4正交網格。可提供任何數目(2個或更多)的探針以及最好包括一個在陣列中心(此實施例未圖示)在使用時位於槍桿軸線A上。例如,5x5陣列可特別有利。該等探針在板子27上通常互相隔開1至10厘米,例如,在此具體實施例中,沿著機器x軸的間隔Lx約為5厘米以及沿著機器y軸的間隔Ly約為5厘米。該片框可包括例如導電(例如,鋁)板子有一孔口用於各個探針位置。來自該等探針的訊號都在線路28輸出以及經由電阻器29a(例如,50歐姆電阻器)到接地G,用適當儀表29b偵測橫越它的電壓。然後,用至同軸真空通孔的屏蔽引線(screened lead)21a取得測得訊號以允許在偵測模組22的真空室外擷取。 The principle of operation of the probe assembly 21 will be explained with reference to the exemplary probe assembly shown in FIG. This includes a frame 27, such as a board, which carries a plurality of probes 30 arranged in an array on a frame, preferably arranged in a regular grid. In Fig. 2, for the sake of clarity of illustration, only three of the probes 30a, 30b, 30c are indicated, but it can be seen that in this embodiment a total of 16 probes are arranged in a 4x4 orthogonal grid. Any number (2 or more) of probes may be provided and preferably includes one at the center of the array (not shown in this embodiment) on the lance axis A when in use. For example, a 5x5 array can be particularly advantageous. The probes are typically spaced 1 to 10 cm apart from each other on the plate 27, for example, in this embodiment, the spacing L x along the x-axis of the machine is about 5 cm and the spacing L y along the machine y-axis. It is 5 cm. The frame may include, for example, an electrically conductive (e.g., aluminum) plate having an aperture for each probe location. The signals from the probes are both output at line 28 and via resistor 29a (e.g., a 50 ohm resistor) to ground G, and the voltage across it is detected by appropriate meter 29b. The measured signal is then taken using a screened lead 21a to the coaxial vacuum via to allow for extraction outside the vacuum chamber of the detection module 22.

該等探針30中之一者的實施例顯示於第3圖。這包括至少兩個長形導電元件32經配置成它們在陣列平面的長形方向互相形成非零角度(亦即,非平行),亦即,垂直於槍桿軸線A的平面,在此為x-y平面。在此實施例中,最好一元件33對齊機器x軸方向以及另一元件34對齊機器y軸方向使得這兩個實質正交。使得射束特性可與 機器方向直接相關是合意的,但是這不是必須。例如,各個元件32可由傳導絲形成,例如接線,扁帶或條帶,若需要,用框體31支撐,例如中空管部。例如,在此具體實施例中,該等元件由在交叉點38互相交叉的鎢線形成。應注意,元件32可能或不互相電接觸,這取決於要如何收集及處理該等訊號。在一實施例中,該等元件32可彼此隔離以及彼等的訊號在個別通道上輸出至偵測模組。不過,最好使用單一通道輸出以便簡化系統的部署,因此元件32可互相電氣連接,例如藉由在交叉點38接觸及/或藉由可傳導或至少包括傳導部或通路的框體31。然後,來自元件32的訊號可用連接至框體或元件32中之任一者的引線39連接至偵測模組。 An example of one of the probes 30 is shown in Figure 3. This includes the at least two elongate conductive elements 32 being configured such that they form a non-zero angle (i.e., non-parallel) with each other in the elongate direction of the array plane, i.e., a plane perpendicular to the axis A of the lance, here an xy plane . In this embodiment, preferably one element 33 is aligned with the machine x-axis direction and the other element 34 is aligned with the machine y-axis direction such that the two are substantially orthogonal. Make beam characteristics comparable Direct correlation of the machine direction is desirable, but this is not required. For example, each element 32 may be formed from a conductive wire, such as a wire, ribbon or strip, if desired, supported by a frame 31, such as a hollow tube. For example, in this particular embodiment, the elements are formed from tungsten wires that intersect each other at intersections 38. It should be noted that elements 32 may or may not be in electrical contact with each other depending on how the signals are to be collected and processed. In one embodiment, the elements 32 are isolated from one another and their signals are output to the detection module on individual channels. However, it is preferred to use a single channel output to simplify system deployment so that elements 32 can be electrically connected to each other, such as by contact at intersection 38 and/or by a frame 31 that can conduct or at least include a conductive portion or passage. The signal from component 32 can then be coupled to the detection module by a lead 39 that is coupled to either the frame or component 32.

來自各個探針30的訊號可由在偵測模組22的個別專屬輸入通道收集,但是如上述,單一通道為較佳,因此最好所有探針以串聯或並聯方式連接在一起,例如用設於安裝板27的適當軌跡或配線或藉由形成導電材料的板子27。第4圖的示意圖描述用於連接9支探針陣列的適當方案,如第3圖所示,各個探針有兩個交叉元件33、34。在此情形下,該陣列的探針元件全部並聯連接至使探針組件21連接至偵測模組22的單一通孔21。 The signals from the various probes 30 can be collected by the individual dedicated input channels of the detection module 22, but as mentioned above, a single channel is preferred, so preferably all of the probes are connected in series or in parallel, for example, Appropriate tracks or wiring of the mounting board 27 or by forming a board 27 of electrically conductive material. The schematic of Figure 4 depicts a suitable scheme for connecting nine probe arrays, as shown in Figure 3, with each probe having two intersecting elements 33,34. In this case, the probe elements of the array are all connected in parallel to a single via 21 that connects the probe assembly 21 to the detection module 22.

各個元件32在接收來自掠過它的射束B的帶電粒子時輸出電訊號。因此,射束B由模組23控制以遵循橫越設於探針30的長形元件32中之至少兩個的測量路徑。在一些情形下,可能需要測量射束在該等探針位置 中之唯一一個的性質,在這種情形下,可限定測量路徑於單一探針,但是更典型的是,想要測量在該等探針位置中之數個的射束性質,所有探針位置為較佳。 Each element 32 outputs an electrical signal upon receiving charged particles from beam B that has passed it. Thus, beam B is controlled by module 23 to follow a measurement path that traverses at least two of elongate elements 32 provided in probe 30. In some cases, it may be necessary to measure the beam at the probe locations. The only one of the properties, in which case the measurement path can be defined for a single probe, but more typically, one wants to measure several of the beam properties in the probe positions, all probe positions It is better.

適當測量路徑MP的實施例顯示於第5圖,其係與第2圖所示的探針組件21的放大部份重疊。探針30都屬於顯示於第3圖者,各有與機器之x、y軸對齊的兩個長形元件33、34。該測量路徑從指向在位置B之探針30a的射束開始。該射束在橫越路徑MP的實質圓弧線段時依序首先橫越元件33a,然後橫越元件34a。該等元件經配置成它們彼此充分互相隔開(至少在它們會與射束交叉的部份)使得該射束在任一時刻只打擊一個元件。亦即,在測量路徑上相鄰元件之間的空間S至少等於射束寬度BW,大於為較佳。典型射束寬度約為0.5毫米,因此空間S至少1毫米為較佳,至少2毫米更佳。探針的尺寸使得射束所遵循的路徑依序橫越該等元件,以此方式不需要遠離標稱探針位置(例如,探針的中心)的大偏折,使得在該射束橫越在一探針內之各個元件的位置處,該射束的性質會實質相同。藉由使探針微小,射束的探測緊挨著在工作區上方的特定位置使得探測結果為工作區上射束在探針之各個中央位置的代表。例如,形成該等長形元件之兩條接線的長度lx、ly在此情形下可在5至10毫米之間,例如在一特別實施例中,為8毫米,使得沿著半徑約2.5毫米之圓弧的路徑將提供必要的順序訊號。在較佳具體實施例中,測量路徑在各個探針內所遵循的半徑很小,例如在2至4毫 米之間,使得射束與探針中心的對應角位移也很小。 An embodiment of a suitable measurement path MP is shown in Fig. 5, which overlaps with the enlarged portion of the probe assembly 21 shown in Fig. 2. Probes 30 are all shown in Figure 3, each having two elongate members 33, 34 aligned with the x and y axes of the machine. The measurement path begins with a beam directed at probe 30a at position B. The beam traverses element 33a first and then traverses element 34a as it traverses a substantially circular arc segment of path MP. The elements are configured such that they are sufficiently spaced apart from each other (at least where they would intersect the beam) such that the beam strikes only one element at any one time. That is, the space S between adjacent elements on the measurement path is at least equal to the beam width BW, which is preferably greater. A typical beam width is about 0.5 mm, so a space S of at least 1 mm is preferred, and at least 2 mm is preferred. The size of the probe is such that the path followed by the beam traverses the elements sequentially, in such a way that there is no need for a large deflection away from the nominal probe position (eg, the center of the probe) such that the beam traverses The properties of the beam will be substantially the same at the location of the various components within a probe. By making the probes small, the detection of the beam is next to a particular location above the work area such that the detection results are representative of the beam's respective central position of the probe at the work area. For example, the lengths l x , l y of the two wires forming the elongate elements may in this case be between 5 and 10 mm, such as 8 mm in a particular embodiment, such that the radius is about 2.5. The path of the arc of millimeters will provide the necessary sequence signals. In a preferred embodiment, the measurement path follows a small radius within each probe, for example between 2 and 4 mm, such that the corresponding angular displacement of the beam from the center of the probe is also small.

在顯示之實施例中,路徑線段只橫越各個元件32一次,但是在其他情形下,該路徑線段可為實質圓形,在這種情形下,在此實施例中會橫越各個探針的各個元件兩次。這有助於改善測得性質的準確度,因為來自各個元件的兩個訊號的平均可用來計算測量值。若需要,也可將該射束配置成環繞各個探針多次。使用用於與各個探針之元件交叉的圓形或弓形測量路徑線段不是必須的,但是基於下述理由為較佳。 In the illustrated embodiment, the path segments only traverse the individual elements 32 once, but in other cases, the path segments can be substantially circular, in which case, in this embodiment, the probes are traversed. Each component is twice. This helps to improve the accuracy of the measured properties, since the average of the two signals from each component can be used to calculate the measured value. The beam can also be configured to surround each probe multiple times if desired. It is not necessary to use circular or arcuate measurement path segments for interfacing with the elements of the respective probes, but is preferred for the following reasons.

在弓形線段結束時,該射束繼續沿著測量路徑MP到下一個探針30b。應注意,對於此一運動可切斷該射束以便不損傷板子27,使得路徑MP實際上不連續。在到達下一個探針30b時,該射束經控制成遵循另一個弓形線段以便橫越探針30b的元件33b及34b。該射束經控制成以此方式繼續沿著測量路徑直到它已在要測量射束性質的位置處橫越所有探針的元件。 At the end of the arcuate segment, the beam continues along the measurement path MP to the next probe 30b. It should be noted that for this movement the beam can be cut so as not to damage the plate 27, so that the path MP is actually discontinuous. Upon reaching the next probe 30b, the beam is controlled to follow another arcuate line segment to traverse the elements 33b and 34b of the probe 30b. The beam is controlled to continue along the measurement path in this manner until it has traversed the elements of all of the probes at the location where the beam properties are to be measured.

此時參考第6圖至第9圖描述可使用以此方式得到之訊號測量的性質實施例。第6圖顯示一示意長形傳導元件,例如第5圖所示之探針30a的元件33a,以及射束B在第5圖實施例中橫越它的路徑。具體言之,B(i)為射束首先打擊元件33a的位置,以及B(ii)為射束離開元件的位置。當射束在位置B(i)時,該元件會開始輸出電訊號,以及當射束在位置B(ii)時結束,亦即,當它已移動通過一段距離D,這等於在垂直於元件之長形方向的方向元 件寬度w加上射束寬度BW的總和,亦即,在y軸方向的寬度,在此情形下。應注意,在測量路徑MP不垂直地橫越元件長形方向的更一般情形下,對於訊號有貢獻的有效元件寬度會較大以及在基於已知交叉角度的訊號處理時會考慮到這項。 An embodiment of the nature of the signal measurement that can be obtained in this manner is described with reference to Figures 6 through 9. Figure 6 shows a schematic elongated conductive element, such as element 33a of probe 30a shown in Figure 5, and the path that beam B traverses in the embodiment of Figure 5. Specifically, B(i) is the position at which the beam first strikes the element 33a, and B(ii) is the position at which the beam exits the element. When the beam is at position B(i), the component begins to output an electrical signal and ends when the beam is at position B(ii), that is, when it has moved through a distance D, which is equal to perpendicular to the component. Direction element of the long direction The width w of the piece plus the sum of the beam widths BW, that is, the width in the y-axis direction, in this case. It should be noted that in the more general case where the measurement path MP does not vertically traverse the elongate direction of the element, the effective element width contributing to the signal will be large and this will be taken into account when processing signals based on known crossing angles.

第7圖顯示由元件33a輸出的示範訊號:在此它是電壓-時間曲線圖,然而也可測量訊號電流。得到及轉換訊號的持續時間T以基於射束的已知速度找出射束B所行進的對應距離D。得到距離D後,可計算射束寬度BW,因為元件寬度w為已知。因此,可處理來自元件33a的訊號以給出射束寬度BW沿著x軸在探針30a位置的度量,以及最好提供適合完成此計算的訊號處理器24。同樣,可處理隨後在射束與元件34a交叉時輸出的訊號以得到射束寬度沿著y軸方向在探針30a位置的測量值。在它指向探針30a時,這些一起提供表明射束斑點的形狀或橢圓度。 Figure 7 shows an exemplary signal output by element 33a: here it is a voltage-time graph, however the signal current can also be measured. The duration T of the sum signal is obtained to find the corresponding distance D traveled by the beam B based on the known speed of the beam. After the distance D is obtained, the beam width BW can be calculated because the element width w is known. Thus, the signal from element 33a can be processed to give a measure of the beamwidth BW along the x-axis at the position of probe 30a, and preferably a signal processor 24 suitable for accomplishing this calculation. Similarly, the signal that is subsequently output when the beam intersects the element 34a can be processed to obtain a measurement of the beam width along the y-axis direction at the position of the probe 30a. Together with these points to the probe 30a, these together provide a shape or ellipticity indicative of the beam spot.

可見,為了解譯偵得訊號,必須能夠識別那一個元件是各個訊號的來源以及這可用許多方法完成。如前述,獨立通道可輸出來自各個元件的訊號,在這種情形下,它們天生就會彼此不同。不過,最好使所有元件連接在一起使得訊號在單一通道上輸出,因此偵測模組22適合基於測量路徑MP的知識以及偵測訊號的順序或者是偵測各個訊號的時間,將各個訊號歸屬於它的來源元件。 It can be seen that in order to understand the signal of the translation, it must be able to identify which component is the source of each signal and this can be done in many ways. As mentioned above, the independent channels can output signals from the various components, in which case they are naturally different from each other. However, it is preferable to connect all the components together so that the signals are output on a single channel. Therefore, the detection module 22 is suitable for assigning each signal based on the knowledge of the measurement path MP and the order of detecting the signals or detecting the time of each signal. The source component of it.

可用不同的方式得到測量路徑的知識。在 一具體實施例中,該偵測模組可設有記憶體25(第1圖),其中,儲存要射束遵循之預定路徑的細節,例如它在選定時段的每個瞬間打擊探針組件21時的x-y座標,或對應向量資料。該資訊也包含射束的速度為較佳。不過,用它可控制射束的精度不準確,因此為了有更好的準確度,最好偵測模組設有監測模組26用以基於當時施加至射束的偏折來監測目前(例如,及時)射束位置。這可能涉及接收來自控制器11及/或射束偏折控制模組23的回饋(然而,如下述,在控制器11及/或射束偏折控制模組23所輸出的預期射束位置之間可能仍有偏差,以及將提供用於處理此事的技術)。給定射束路徑的知識,單一通道收到的順序訊號可正確地分配至從它各自導出的元件。 Knowledge of the measurement path can be obtained in different ways. in In one embodiment, the detection module can be provided with a memory 25 (Fig. 1) in which details of a predetermined path to be followed by the beam are stored, for example, it strikes the probe assembly 21 at each instant of the selected time period. The xy coordinate of the time, or the corresponding vector data. This information also includes the speed of the beam is preferred. However, the accuracy of the beam can be controlled to be inaccurate, so for better accuracy, it is preferred that the detection module be provided with a monitoring module 26 for monitoring the current based on the deflection applied to the beam at the time (eg , in time) the beam position. This may involve receiving feedback from the controller 11 and/or the beam deflection control module 23 (however, as described below, at the desired beam position output by the controller 11 and/or the beam deflection control module 23 There may still be deviations, and the technology that will be used to handle the matter). Given the knowledge of the beam path, the sequential signals received by a single channel can be correctly assigned to the elements derived from them.

例如,第8圖係示意顯示源於第5圖所示之探針組件21在射束沿著圖示射束路徑移動時的輸出跡線。在時刻t1偵測第一訊號(1)以及可歸屬於探針30a的元件33a,這憑藉它是偵測的第一訊號或者是射束將會從起始點行進到元件33a之距離的給定知識,它會對應至時刻t1乘上已知射束速度。替換地,參考監測模組26可檢查在時刻t1的及時射束位置。訊號的持續時間T33a對應至射束沿著x-方向(x30a)在探針位置30a的寬度,如前述。下一個訊號(2)同樣可歸屬於探針30a的元件34a,因此它的持續時間T34a提供射束沿著y-方向(y30a)在同一個位置的寬度。同樣地,可確定射束斑點在指向探針30a位置時的形狀或至少橢圓度。如第8(b)圖所示,在此實施例中,發現第一 訊號(1)的持續時間比第二訊號(2)的長,因而發現射束斑點在x方向為長形而不是精確的圓形。 For example, Figure 8 is a schematic representation of the output trace from the probe assembly 21 shown in Figure 5 as the beam moves along the illustrated beam path. At time t 1 a first detection signal (1) and attributable to the probe member 33a to 30a, by virtue of which it is the first detection signal or the beam will travel a distance from the starting point of the element 33a Given the knowledge, it is multiplied by the known beam velocities corresponding to time t 1 . Alternatively, the monitoring module 26 may check the reference at time t 1 in time of the beam position. The duration T 33a of the signal corresponds to the width of the beam along the x-direction (x 30a ) at the probe position 30a, as previously described. The next signal (2) can likewise be attributed to the element 34a of the probe 30a, so its duration T 34a provides the width of the beam at the same position along the y-direction (y 30a ). Likewise, the shape or at least the ellipticity of the beam spot as it is directed at the position of the probe 30a can be determined. As shown in FIG. 8(b), in this embodiment, it is found that the duration of the first signal (1) is longer than that of the second signal (2), and thus the beam spot is found to be elongated rather than precise in the x direction. Round shape.

繼續沿著第8(a)圖的跡線,藉由應用相同的原理,第三及第四訊號(3)及(4)可與下一個探針30b的元件33b及34b關聯。訊號持續時間T33b及T34b提供射束斑點在指向探針30b時各自在x、y方向(x30b,y30b)的寬度,因為在此情形下,該等持續時間相似,如第8(c)圖所示,在此發現射束斑點呈實質圓形。當然,這些計算假設各個元件33、34的寬度相等。這並非必須如此,若不如此,它們的不同寬度則在加工時需要納入考量。 Continuing along the trace of Figure 8(a), the third and fourth signals (3) and (4) can be associated with elements 33b and 34b of the next probe 30b by applying the same principles. The signal durations T 33b and T 34b provide the width of the beam spot in the x, y direction (x 30b , y 30b ) when pointing to the probe 30b, since in this case the durations are similar, such as 8th ( c) As shown, the beam spot is found to be substantially circular. Of course, these calculations assume that the widths of the individual elements 33, 34 are equal. This is not necessarily the case. If not, their different widths need to be taken into account when processing.

偵得訊號也可用來得到射束強度(亦即,電流密度)在垂直於各個元件長形方向的方向的輪廓。這圖示於第9圖,在此第9(a)圖顯示射束B開始沿著測量路徑MP與元件32交叉,以及第9(b)圖描繪曲線(i)偵得訊號和(ii)增加射束B在元件長度方向(y-方向)橫越元件的寬度對於該訊號的貢獻,以及(iii)射束強度在x-方向的衍生變化。當射束B在任一時刻橫越元件32時,射束的條帶部份入射於元件上(顯示於第9(a)圖的劃線部份)以及在該時刻測得的訊號會與橫越收集部份的射束的電流密度成正比。隨著相對運動的進展,射束斑點的不同條帶部份會被元件32取樣,以及偵得訊號會相應地改變。不過,由於射束斑點有實質圓形的形狀,元件32被射束照射的長度l會根據如果射束形狀已知可推定的函數l(t)隨著時間改變。顯示於第9(b)圖的由函數l(t)產生的偵得訊號(i)實際上為收到訊 號以虛線(ii)表示的變化與以(iii)表示的射束實際強度變化的總合。因此,由於可推定函數l(t)(例如,基於在說明第6圖至第8圖時提及的寬度測量),可由偵得訊號(i)算出強度輪廓(iii)。 The detected signal can also be used to obtain a profile of the beam intensity (i.e., current density) in a direction perpendicular to the elongate direction of each element. This is illustrated in Figure 9, where Figure 9(a) shows beam B beginning to cross element 32 along measurement path MP, and Figure 9(b) depicts curve (i) detection signal and (ii) Increasing the contribution of beam B across the width of the element in the length direction of the element (y-direction) to the signal, and (iii) the derivative variation of the beam intensity in the x-direction. When beam B traverses element 32 at any one time, the strip portion of the beam is incident on the element (shown in the underlined portion of Figure 9(a)) and the signal measured at that time will be horizontal The current density of the collected beam is proportional. As the relative motion progresses, the different strip portions of the beam spot are sampled by element 32 and the detected signal changes accordingly. However, since the beam spot has a substantially circular shape, the length l of the element 32 illuminated by the beam will vary over time according to a function l(t) that can be estimated if the beam shape is known. The detected signal (i) generated by the function l(t) shown in Figure 9(b) is actually received. The sum of the change indicated by the broken line (ii) and the actual intensity change of the beam indicated by (iii). Therefore, since the function l(t) can be estimated (for example, based on the width measurement mentioned in the description of FIGS. 6 to 8), the intensity profile (iii) can be calculated from the detected signal (i).

該強度輪廓會沿著垂直於元件長形方向的方向測量,因此顯示於第5圖的設備,各自利用元件33a及34b在x、y方向可得到。這也可在各個探針位置重覆。 The intensity profile is measured along a direction perpendicular to the elongate direction of the component, so that the device shown in Figure 5 is available in the x, y directions by means of elements 33a and 34b, respectively. This can also be repeated at each probe location.

若需要,可進一步處理該等訊號以得到射束斑點的二維強度圖。實現此事係藉由在沿著多個方向得到的輪廓上進行拓樸重建以解卷該等訊號。例如,眾所周知的拉冬反函數可用於這個目的。這個目的需要沿著不同方向通過射束斑點得到的兩個輪廓中之最小者,但是在可得到兩個以上此類輪廓時將實現更好的解析度。有附加元件的探針特別適合這個目的,以下在說明第15圖及第16圖時會描述。 If desired, the signals can be further processed to obtain a two-dimensional intensity map of the beam spot. This is achieved by topological reconstruction on the contours taken in multiple directions to unwind the signals. For example, the well-known Lagrangian inverse function can be used for this purpose. This goal requires the smallest of the two profiles obtained by beam spotting in different directions, but a better resolution will be achieved when more than two such profiles are available. Probes with additional components are particularly suitable for this purpose, as will be described below with reference to Figures 15 and 16.

該等測得性質可用來調整射束產生器以按需要修改射束性質。例如,在許多應用中,工作區有實質均勻的射束性質是合乎需要的。因此,該系統可包括回饋模組26b適合產生及輸出回饋訊號給射束產生器(例如,控制器11)可用來調整例如電子槍的光學系統以便按需要修改射束寬度、形狀或強度。可藉由提供具有適當演算法的產生器及/或系統來自動化此一方法為較佳,給定饋訊號,它可調整射束以實現所欲輸出而不必進一步的操作員輸入。 These measured properties can be used to adjust the beam generator to modify the beam properties as needed. For example, in many applications, it is desirable for the work area to have substantially uniform beam properties. Thus, the system can include a feedback module 26b adapted to generate and output a feedback signal to a beam generator (e.g., controller 11) that can be used to adjust an optical system, such as an electron gun, to modify the beam width, shape, or intensity as desired. It may be preferable to automate this method by providing a generator and/or system with a suitable algorithm, which can adjust the beam to achieve the desired output without further operator input.

該射束偏折控制模組可用各種方式實作。 在一些具體實施例中,射束產生設備的控制器11(以下被稱為“初級”控制器),藉由相應地編程該初級控制器,可用來使射束沿著所欲測量路徑移動。不過,由於在許多情形下,這並非較佳,該初級控制器會調整射束以修正失真,例如散光。由於這些有角度相依性,如果指示初級控制器偏折射束離開要在此處測量射束性質的探針位置(例如,探針的中心),則射束會被自動調整以考慮到偏移,因此橫越各個探針元件的射束不會與射束在指向預期位置時有相同的性質。此外,初級控制器11通常輸出數位控制,在射束以高速在該等探針元件上方偏折為較佳時,可能導致射束路徑非故意地不連續。 The beam deflection control module can be implemented in a variety of ways. In some embodiments, the controller 11 of the beam generating device (hereinafter referred to as the "primary" controller) can be used to move the beam along the desired measurement path by programming the primary controller accordingly. However, since in many cases this is not preferred, the primary controller will adjust the beam to correct for distortion, such as astigmatism. Due to these angular dependencies, if the primary controller deflects the beam away from the probe position where the beam properties are to be measured (eg, the center of the probe), the beam is automatically adjusted to account for the offset, Thus the beam traversing the individual probe elements does not have the same properties as when the beam is pointing at the intended location. In addition, primary controller 11 typically outputs digital control that may result in unintentional discontinuity of the beam path when the beam is deflected over the probe elements at high speeds.

因此,藉由避開初級控制器11,強加導致所欲測量路徑的射束偏移於射束為較佳。該初級控制器經程式化成沿著初級射束路徑P1輸送射束使射束由一探針位置移到下一個。該射束偏折控制模組隨後添加次級射束路徑(或“偏移”)P2於該初級射束路徑上。該測量路徑包括疊加於初級射束路徑P1的次級射束路徑P2(亦即,MP=P1+P2)。 Therefore, by avoiding the primary controller 11, it is preferable to impose a beam that causes the desired measurement path to be shifted to the beam. The primary controller is programmed to transport the beam along the primary beam path P 1 to move the beam from one probe position to the next. The beam deflector control module followed by the addition of the secondary beam path (or "offset") P 2 on the primary beam path. The measurement path comprises a secondary beam path P 2 superimposed on the primary beam path P 1 (i.e., MP = P 1 + P 2 ).

第10圖顯示用來形成測量路徑(與在說明第5圖時提及的類似)的初級及次級射束路徑實施例,在此情形下,除了射束在各個探針位置處橫越實質圓形路徑線段以外。第10(a)圖顯示由初級控制器11輸出的初級射束路徑P1。射束B由一探針30a移到下一個30b,每個都位在探針中心。這是將記錄測得性質的探針位置。該等順序 位置中之每一者被記錄成為觸發位置40a、40b、40c。次級射束路徑P2顯示於第10(b)圖以及包括遠離探針中心的短直移動,接著是實質圓形線段經設計成可造成射束橫越一探針中之數個元件,如前述。 Figure 10 shows an embodiment of the primary and secondary beam paths used to form the measurement path (similar to that mentioned in the description of Figure 5), in which case the beam traverses substantially at each probe position. Outside the circular path segment. Figure 10(a) shows the primary beam path P 1 output by the primary controller 11. Beam B is moved from one probe 30a to the next 30b, each at the center of the probe. This is the location of the probe that will record the measured properties. Each of the sequential positions is recorded as a trigger position 40a, 40b, 40c. The secondary beam path P 2 is shown in Figure 10(b) and includes a short straight movement away from the center of the probe, followed by a substantially circular line segment designed to cause the beam to traverse a number of elements in a probe, As mentioned above.

操作時,射束被初級控制器11移到位置40a。射束偏折控制模組23由初級控制器經由監測模組26接收關於根據初級射束路徑之射束目前位置的資訊。在位置40a被記錄成為觸發位置以回應射束到達該位置時,射束偏折模組23輸出代表路徑P2的次級射束路徑控制訊號,這造成射束B偏折遠離探針30a的中心以及遵循環繞探針30a的圓形路徑線段,如第10(c)圖所示。在完成(例如,在預設延遲後)時,該初級控制器使射束移到在位置40b的下一個探針30b以及再度這觸發次級射束控制訊號P2的輸出。所得測量路徑顯示於第10(c)圖,在此虛線表示路徑的不連續性,在此射束被切斷(內建於初級射束路徑P1)。 In operation, the beam is moved by the primary controller 11 to position 40a. The beam deflection control module 23 receives information from the primary controller via the monitoring module 26 regarding the current position of the beam according to the primary beam path. When the position 40a is recorded as the trigger position in response to the beam reaching the position, the beam deflection module 23 outputs a secondary beam path control signal representative of the path P 2 , which causes the beam B to be deflected away from the probe 30a. The center and the circular path segment following the surrounding probe 30a are as shown in Fig. 10(c). Upon completion (e.g., after a preset delay), the primary controller moves the beam at a probe location 40b and 30b which again trigger the output control signal of the secondary beam of P 2. The resulting measurement path is shown in section 10 (c) of FIG, this discontinuity dashed line indicates the path where the beam is cut off (built into the primary beam path P 1).

各個圓形線段的開始、結束點最好遠離任一長形元件,如第10圖實施例所示,使得射束不會在任何元件上停留一段明顯的時段,因為這可能造成元件過熱而熔化。例如,該射束偏折可在探針中心的270度位置處靜止直到被觸發以完成一個行進。 Preferably, the start and end points of each circular segment are away from any elongate member, as shown in the embodiment of Fig. 10, so that the beam does not remain on any of the components for a significant period of time as this may cause the component to overheat and melt. . For example, the beam deflection can be stationary at a 270 degree position at the center of the probe until triggered to complete a journey.

適當測量路徑的另一實施例和初級及次級射束路徑貢獻顯示於第11圖。在此,初級射束路徑P1(第11(a)圖)為由一探針到下一個的連續直線,其中,該射束偏 離探針中心以避免該等元件交叉為較佳。次級射束路徑P2為實質圓形線段(第11(b)圖)。在此情形下,沒有觸發點以及該射束偏折控制模組不需要接收關於射束在初級射束路徑上之目前位置的回饋。該次級射束控制訊號連續地輸出,因而測量路徑MP遵循如第11(c)圖所示的螺線。儘管該路徑不再用該路徑的知識(例如,來自監測模組)橫越在相同位置或相同順序的各個探針的元件,該偵測模組仍可正確地使各個脈衝歸屬於各自的元件。為了防止損傷板子27,對於在探針之間的部份,初級控制器可切斷射束B。 Another embodiment of the appropriate measurement path and primary and secondary beam path contributions are shown in FIG. Here, the primary beam path P 1 (Fig. 11(a)) is a continuous line from one probe to the next, wherein the beam is offset from the center of the probe to avoid the intersection of the elements. The secondary beam path P 2 is a substantially circular line segment (Fig. 11(b)). In this case, there is no trigger point and the beam deflection control module does not need to receive feedback regarding the current position of the beam on the primary beam path. The secondary beam control signal is continuously output, and thus the measurement path MP follows the spiral as shown in Fig. 11(c). Although the path no longer uses the knowledge of the path (eg, from the monitoring module) to traverse the components of the various probes in the same position or in the same order, the detection module can correctly attribute each pulse to the respective component. . In order to prevent damage to the board 27, the primary controller can cut the beam B for the portion between the probes.

如前述,該測量路徑的圓形或弓形線段為較佳而且理由之一是,在該等元件經配置成如圖示從中央交叉點徑向延伸,該路徑以相同的角度與各個元件交叉,亦即,垂直地。此外,藉由應用作為次級控制訊號的恆定行進角速度,射束的速度可保持不變,這簡化偵得訊號的處理。不過,以遠離法線的著陸角度(例如,在陣列的周邊)而言,雖然射束的行進角速度會不變,該射束會描繪出橢圓而不是圓圈,因為陣列平面以該角度與射束交叉。同樣地,射束的速度會隨著它的行進而改變。這會導致X及Y跡線上有不同的脈衝寬度,即使該射束完全對稱。如果使次級控制訊號取決於射束偏折角度(由監測部26得知),可修正這種失真。例如,射束偏折控制模組23可經組配成對於各個探針位置產生橢圓修正用偏折使得射束環繞探針的路徑保持圓形,從而射束速度不變。替換地,在訊號的後處理可完成該修正。以下會描述圓形或弓形測量路徑的其 他優點。 As mentioned above, the circular or arcuate segments of the measurement path are preferred and one of the reasons is that the elements are configured to extend radially from a central intersection as illustrated, the path intersecting the various elements at the same angle, That is, vertically. Furthermore, by applying a constant travel angular velocity as a secondary control signal, the speed of the beam can be kept constant, which simplifies the processing of the detected signal. However, with a landing angle away from the normal (for example, at the periphery of the array), although the angular velocity of the beam will not change, the beam will depict an ellipse instead of a circle because the array plane is at that angle with the beam. cross. Likewise, the speed of the beam will change as it travels. This causes different pulse widths on the X and Y traces, even if the beam is completely symmetrical. This distortion can be corrected if the secondary control signal is dependent on the beam deflection angle (as known by the monitoring portion 26). For example, the beam deflection control module 23 can be configured to produce an elliptical correction deflection for each probe position such that the path of the beam around the probe remains circular such that the beam velocity is constant. Alternatively, the correction can be done after the signal is processed. The following will describe the circular or arcuate measurement path His advantages.

該次級射束路徑可用各種方式強加於射束。第12圖顯示工具在說明第1圖時已提及的選定構件。在此,電子槍15的偏折線圈18本身用來對射束施加所有的必要偏折。初級射束路徑控制訊號P1由初級控制器11輸出而且通常會通過數位至類比轉換器12。次級射束路徑控制訊號P2由射束偏折控制模組23產生及輸出以及疊加於初級射束路徑控制訊號P1以形成隨後被偏折線圈18接收的測量路徑訊號。例如,該次級射束路徑控制訊號可由兩個任意函數產生器產生,彼等同步成產生單一正弦波輸出而且相移90度以產生正圓偏折。 This secondary beam path can be imposed on the beam in a variety of ways. Figure 12 shows the selected components that have been mentioned by the tool in the description of Figure 1. Here, the deflection coil 18 of the electron gun 15 itself is used to apply all necessary deflections to the beam. The beam path of the primary control signal P 1 output from the primary controller 11 and typically by digital to analog converter 12. The beam path of the secondary control signal P 2 by the beam deflector control module generates and outputs the signal path and measuring the deflection coil 18 are then superimposed on the received control signal to the primary beam path P 1 to form 23. For example, the secondary beam path control signal can be generated by two arbitrary function generators that are synchronized to produce a single sine wave output and phase shifted by 90 degrees to produce a perfect circle deflection.

一替代實作顯示於第13圖,其係描述在說明第1圖時已提及的加層製造工具1’的修改版本。與前述相同的構件用相同的元件符號標示而且不再描述。在此具體實施例中,射束偏折控制模組23更包括次級偏折單元23a,例如第二偏折線圈集合,其係設置於初級偏折單元18沿著槍體軸線A的下游。因此,初級偏折單元18來自控制器11的(未修改)初級控制訊號來控制射束,同時次級偏折單元23a根據來自模組23的次級射束控制訊號來強加偏移於射束B。這樣的優點是不需要改變機器的電子設備,這在加裝該探針系統於現有機器時很有用。 An alternative implementation is shown in Fig. 13, which is a modified version of the layered manufacturing tool 1' which has been mentioned in the description of Fig. 1. The same components as those described above are denoted by the same reference numerals and will not be described again. In this embodiment, the beam deflection control module 23 further includes a secondary deflection unit 23a, such as a second set of deflection coils, disposed downstream of the primary deflection unit 18 along the gun axis A. Therefore, the primary deflection unit 18 is from the (unmodified) primary control signal of the controller 11 to control the beam, while the secondary deflection unit 23a imposes an offset on the beam based on the secondary beam control signal from the module 23. B. This has the advantage that there is no need to change the electronics of the machine, which is useful when retrofitting the probe system to an existing machine.

在一特別有利的實作中,次級偏折單元23a與探針組件21裝設於一整合裝置中,第13a圖顯示一實施例。裝置50包括如以上所描述的探針組件21,以及射束 偏折單元23a,例如偏折線圈。射束偏折單元23a由支撐組件51支撐於探針組件上,在此其係包括4支支撐臂51,在探針組件的各個角落設置一支(然而可裝設任何個數)。較佳地,支撐組件51使偏折單元固定地連接至探針組件使得在要測量射束的性質時,該裝置整體可筆直地放入機器,例如工具1’。替換地,可提供該裝置為套件以及就地組裝。 In a particularly advantageous implementation, the secondary deflection unit 23a and the probe assembly 21 are mounted in an integrated device, and Figure 13a shows an embodiment. Device 50 includes probe assembly 21 as described above, and a beam The deflecting unit 23a is, for example, a deflecting coil. The beam deflecting unit 23a is supported by the support assembly 51 on the probe assembly, where it includes four support arms 51, one at each corner of the probe assembly (although any number can be installed). Preferably, the support assembly 51 securely couples the deflection unit to the probe assembly such that when the properties of the beam are to be measured, the device as a whole can be placed straight into the machine, such as the tool 1'. Alternatively, the device can be provided as a kit and assembled in place.

為了安裝該測量系統,將裝置50與射束軸線A對齊地放進機器的真空室2。探針組件23可用通常裝設於此類機器中用於安裝人工校準板的配件裝配至工件台3。因此,該偏折單元通過該支撐組件自動定位。偏折單元23a用兩個同軸通孔連接至控制器,例如射束偏折控制模組23,以便實現次級射束控制訊號,例如圓形偏折。 To mount the measurement system, the device 50 is placed into the vacuum chamber 2 of the machine in alignment with the beam axis A. The probe assembly 23 can be assembled to the workpiece table 3 with accessories that are typically installed in such machines for mounting manual calibration plates. Therefore, the deflection unit is automatically positioned by the support assembly. The deflecting unit 23a is connected to the controller by two coaxial through holes, such as the beam deflection control module 23, in order to implement a secondary beam control signal, such as a circular deflection.

如同上述,該等探針輸出均連接至偵測模組22用以偵測及處理該等探針元件所輸出的電訊號。 As described above, the probe outputs are connected to the detection module 22 for detecting and processing the electrical signals output by the probe elements.

這個辦法使得本發明的系統及方法能輕易地部署於利用帶電粒子束的現有機器中而不必修改機器的射束產生器控制系統。該模組化單元可暫時裝入機器而不必改變系統本身。該支撐組件例如可包括支撐臂,例如定位銷(dowel)與預先機械加工的孔,或正確地定位該射束偏折單元的任何其他適當結構。 This approach allows the system and method of the present invention to be easily deployed in existing machines that utilize charged particle beams without having to modify the beam generator control system of the machine. The modular unit can be temporarily loaded into the machine without having to change the system itself. The support assembly can, for example, include a support arm, such as a dowel and pre-machined hole, or any other suitable structure that properly positions the beam deflection unit.

在目前所描述的具體實施例中,偵得訊號歸屬於各個探針元件係完全基於射束路徑的知識。如上述,為了實現良好的準確度,實務上,這需要使用接收來 自初級控制器11以及最好也來自射束偏折控制模組23的位置資訊的監測部26來監測射束的目前偏折。理論上,如果次級射束路徑在射束到達已知觸發位置時輸出以及它的確切形狀及相位已知,該系統可單獨依賴關於初級射束路徑的回饋,這允許識別為各個訊號之起源的探針,然後依賴訊號在一探針內的順序以確定該探針中那一個元件為該訊號的來源。不過,實務上,該次級射束路徑可能不完全相同,以及,特別是,在它輸出的在每個瞬間,可能不在探針附近的相同位置開始。同樣,如同第11圖具體實施例,在連續次級偏折訊號的情形下,它通常為首先被射束橫越的各個探針的元件中之一不同者。 In the presently described specific embodiment, the detected signals are attributed to the individual probe elements based entirely on the knowledge of the beam path. As mentioned above, in order to achieve good accuracy, in practice, this requires the use of receiving The current deflection of the beam is monitored from the primary controller 11 and the monitoring portion 26, preferably also from the positional information of the beam deflection control module 23. In theory, if the secondary beam path is known when the beam reaches the known trigger position and its exact shape and phase are known, the system can rely solely on feedback on the primary beam path, which allows identification as the origin of each signal. The probe then depends on the order of the signals within a probe to determine which of the components in the probe is the source of the signal. However, in practice, the secondary beam path may not be exactly the same, and, in particular, at the instant where it is output, may not start at the same location near the probe. Similarly, as in the specific embodiment of Figure 11, in the case of a continuous secondary deflection signal, it is typically one of the components of the respective probes that are first traversed by the beam.

第14(a)圖根據另一具體實施例顯示探針組件之一部份,其係修改成協助識別各個訊號的來源。在此,各個探針30a、30b的構造大體如以上在說明第5圖時所述以及類似的構件用相同的元件符號表示。各個探針設有標記元件36、36含有在測量路徑方向比長形元件33、34寬的傳導元件。例如,該標記元件可包括探針框體的樁子或突出物。用與長形元件33、34中之每一者相同的方式,標記元件36電氣連接至該偵測模組。由於它的寬度較大,在被射束B打到時,與起源於長形元件33、34的相比,該標記元件會產生有較大峰值振幅的電訊號,因而可用作標記訊號以基於它們相對於該標記的順序來識別其他訊號。 Figure 14(a) shows a portion of the probe assembly modified to assist in identifying the source of each signal, in accordance with another embodiment. Here, the configurations of the respective probes 30a, 30b are substantially the same as those described above in the description of FIG. 5 and the like. Each of the probes is provided with marking elements 36, 36 containing conducting elements that are wider in the direction of the measuring path than the elongate elements 33, 34. For example, the marking element can comprise a peg or protrusion of the probe frame. In the same manner as each of the elongate members 33, 34, the marker member 36 is electrically coupled to the detection module. Due to its large width, when hit by the beam B, the marking element generates an electrical signal having a large peak amplitude compared to that originating from the elongate members 33, 34, and thus can be used as a marking signal. Other signals are identified based on their order relative to the tag.

第14(b)圖的曲線描繪在射束B遵循第14(a)圖測量路徑MP時偵得電訊號的示範序列。應注意,為求 圖示清楚,不顯示將產生的所有訊號。頭3個訊號(1)、(2)及(3)用來自監測部26的回饋歸屬於探針30a。第二訊號(2)的量級實質大於其他訊號從而已知起源自標記元件36a。結果,基於探針幾何的知識,脈衝(1)可歸屬於元件33a,以及脈衝(3)歸屬於元件34a。當射束到達探針30b時,由第14(b)圖可見,射束在探針附近的不同位置開始藉此以不同的順序橫越該等元件。這是用標記脈衝(4)的存在識別為歸屬於探針30b的第一脈衝,允許將後續脈衝(5)及(6)分別匹配至元件34b及33b。 The graph of Fig. 14(b) depicts an exemplary sequence of electrical signals detected when beam B follows the measurement path MP of Fig. 14(a). Should pay attention to The illustration is clear and does not show all the signals that will be generated. The first three signals (1), (2), and (3) are attributed to the probe 30a by feedback from the monitoring unit 26. The magnitude of the second signal (2) is substantially greater than the other signals and is known to originate from the marker element 36a. As a result, based on the knowledge of the probe geometry, pulse (1) can be attributed to element 33a, and pulse (3) can be attributed to element 34a. When the beam reaches the probe 30b, as seen in Figure 14(b), the beam begins at different locations near the probe thereby traversing the elements in a different order. This is identified by the presence of the marker pulse (4) as the first pulse attributable to probe 30b, allowing subsequent pulses (5) and (6) to be matched to elements 34b and 33b, respectively.

第15圖顯示適合使用於本發明系統之探針30’的另一具體實施例。如第15(a)圖所示,該探針基於在前面實施例為類似套環之圓柱形管部的框體31a,以及界定一中央孔口。框體31最好導電以及可由例如不鏽鋼製成。該框體的外表面設有在框體四周等距隔開的8個軸向溝槽以及用來固持長形導電元件32。例如,形成元件32可藉由連續接線用溝槽纏繞於框體四周使得它如圖示橫越本身以提供取向不同的元件。在此實施例中,安置總共四個不同方向:提供沿著x、y方向的元件,以及與它們在兩個方向等距的元件。以此方式,藉由提供額外的測量方向,可測量射束斑點在更多方向的寬度,因此可更準確地確定它的形狀。此外,可重建解析度較高的強度圖。應注意,所有元件落在同一個平坦平面中為較佳,使得相對於工作表面,各個以相同的高度測量射束的性質,然而這不是必須的。 Figure 15 shows another embodiment of a probe 30' suitable for use in the system of the present invention. As shown in Fig. 15(a), the probe is based on the frame 31a which is a cylindrical tube portion similar to the collar in the previous embodiment, and defines a central opening. The frame 31 is preferably electrically conductive and can be made of, for example, stainless steel. The outer surface of the frame is provided with eight axial grooves equally spaced around the frame and for holding the elongated conductive elements 32. For example, the forming element 32 can be wrapped around the frame by grooves with continuous wiring such that it traverses itself as shown to provide elements of different orientations. In this embodiment, a total of four different directions are placed: elements along the x, y directions, and elements that are equidistant from them in both directions. In this way, by providing an additional measurement direction, the width of the beam spot in more directions can be measured, so that its shape can be determined more accurately. In addition, a higher resolution intensity map can be reconstructed. It should be noted that it is preferred that all of the components fall in the same flat plane such that the properties of the beam are measured at the same height relative to the working surface, although this is not required.

在此具體實施例中,元件32由固持於有12毫米外徑及8毫米內徑之框體31a的18微米鎢線製成。框體31裝入陶瓷夾持具31b,陶瓷夾持具31b本身藉由固定於陣列板27的鑽孔以安裝至機器工作區中的特定位置。 In this embodiment, the member 32 is made of 18 micron tungsten wire held to a frame 31a having an outer diameter of 12 mm and an inner diameter of 8 mm. The frame 31 is housed in a ceramic holder 31b which itself is mounted to a specific position in the machine work area by drilling holes fixed to the array plate 27.

在迄今所描繪的實施例中,該等探針元件經形成有在探針中心的交叉點,例如十字線配置。不過,這不是必須的,以及第16圖顯示可使用之示範探針組態的一些其他實施例。在這兩個情形下,該探針基於有圓形橫截面的管狀框體31,但是這不是必須的,以及該框體可採用界定中央孔口的任何形狀。在第16(a)圖實施例中,提供四個長形元件且經配置成形成方形或矩形形狀。元件33及33’對齊機器的x軸,以及元件34及34’對齊機器的y軸。該等元件彼此電氣相互接觸及/或在角落交叉點與框體31接觸為較佳:例如,該等元件的形成可藉由環繞設在框體31正面以界定4個角落的4支樁子來卷繞接線。像這樣的配置有以下優點:在探針30”中心沒有元件,這意謂射束不需立即偏折離開探針中心以避免元件熔化:射束可無害地停留在探針的中心。該射束可與該等元件中之任何兩個或更多交叉,例如藉由遵循圓形測量路徑MP,如圖示。在此情形下,該測量路徑會以各種不同角度橫越該等元件以及這會需要考慮到訊號處理,如前述。 In the embodiments depicted so far, the probe elements are formed with intersections at the center of the probe, such as a crosshair configuration. However, this is not required, and Figure 16 shows some other embodiments of an exemplary probe configuration that can be used. In both cases, the probe is based on a tubular frame 31 having a circular cross section, but this is not required and the frame may take any shape that defines a central aperture. In the 16th (a) embodiment, four elongate elements are provided and configured to form a square or rectangular shape. Elements 33 and 33' are aligned with the x-axis of the machine, and elements 34 and 34' are aligned with the y-axis of the machine. Preferably, the elements are in electrical contact with one another and/or in contact with the frame 31 at corner intersections: for example, the elements may be formed by surrounding four posts that are disposed on the front of the frame 31 to define four corners. Winding the wiring. An arrangement like this has the advantage that there are no components in the center of the probe 30", which means that the beam does not need to be deflected immediately away from the center of the probe to avoid melting of the element: the beam can stay in the center of the probe harmlessly. The beam may intersect any two or more of the elements, for example by following a circular measurement path MP, as illustrated. In this case, the measurement path will traverse the elements at various angles and this will Need to consider signal processing, as mentioned above.

在第16(b)圖實施例中,提供3個元件33、34及35而且以任意角度配置成彼此不平行。在探針30’’’的中心也沒有元件,基於上述理由,這是有利的。 該射束可採用橫越該等元件中之至少兩個的任何測量路徑。在此情形下,圖示由兩個直線部份製成的直角測量路徑MP,從它可得到與前述相同的資料。不過,與如前述的實質圓形或弓形路徑相比,像這些的路徑更難以準確地實作,特別是用類比控制手段,因為控制訊號需要疊加許多高頻分量以近似為預期的直線及/或尖銳角落。對比之下,可輕易高速地實現圓形或弓形的射束偏折而不失真。 In the embodiment of Fig. 16(b), three elements 33, 34 and 35 are provided and are arranged at any angle so as not to be parallel to each other. There are also no elements in the center of the probe 30''', which is advantageous for the above reasons. The beam can employ any measurement path that traverses at least two of the elements. In this case, a right angle measuring path MP made of two straight portions is shown, from which the same information as described above can be obtained. However, paths like these are more difficult to implement accurately than the substantially circular or arcuate paths as described above, especially with analog control because the control signal needs to be superimposed with many high frequency components to approximate the expected line and / Or sharp corners. In contrast, a circular or arcuate beam deflection can be easily achieved at high speed without distortion.

使用於本發明系統的探針有利的且特別適用於本申請案,藉此可以廣泛不同的入射角測量射束的性質,因為該等探針對於射束B的著陸角度實質不敏感。這是因為使用用於取樣射束及輸出偵得訊號的傳導元件32。該等傳導元件會產生訊號,不管入射於其上的射束角度為何。結果,陣列中的所有探針可有相同的構造而且可互換,因為每個可應付在工作區上方之不同位置處經驗到的整個著陸角度範圍。因此,多位置的探針使得能夠在分散工作區上方一致地測量熔化/材料加工效能,在此粒子束偏折至各個位置。 The probes used in the system of the invention are advantageous and particularly suitable for use in the present application, whereby the properties of the beam can be measured at widely different angles of incidence, since the probes are substantially insensitive to the landing angle of beam B. This is because the conducting element 32 is used for sampling the beam and outputting the detected signal. The conductive elements produce a signal regardless of the angle of the beam incident thereon. As a result, all of the probes in the array can have the same construction and are interchangeable because each can cope with the entire range of landing angles that are experienced at different locations above the work area. Thus, the multi-position probe enables consistent measurement of melting/material processing performance over the dispersed working area where the particle beam deflects to various locations.

為了進一步去除任何其餘角度敏感性,最好長形導電元件在陣列平面(亦即,垂直於槍桿軸線A)有寬度,其係等於或大於它們在陣列垂直方向的厚度。例如,達到此準則係藉由有圓形橫截面的接線或有配置成與探針軸線垂直之薄尺寸的扁平接線、條帶或帶子。這最小化探針對於射束入射角的敏感度,因為相較於正面(面向射束源)所接收的,元件側面所收到的任何粒子為最少。有實質平 坦表面的條帶元件特別較佳,因為相較於例如圓形接線,這會減少回散射的程度。第17圖顯示這種探針30IIIV的另一實施例,在此元件33、34由橫越框體31地垂懸的導電箔片相互一體成形。 To further remove any remaining angular sensitivity, it is preferred that the elongate conductive elements have a width in the array plane (i.e., perpendicular to the shank axis A) that is equal to or greater than their thickness in the vertical direction of the array. For example, this criterion is achieved by a wire having a circular cross section or a flat wire, strip or tape having a thin dimension that is configured perpendicular to the axis of the probe. This minimizes the sensitivity of the probe to the beam incidence angle because any particles received on the side of the element are minimized compared to the front side (facing the beam source). A strip element having a substantially flat surface is particularly preferred because it reduces the degree of backscattering compared to, for example, circular wiring. Fig. 17 shows another embodiment of such a probe 30 IIIV in which the elements 33, 34 are integrally formed with each other by a conductive foil which hangs across the frame 31.

如前述,由偏折單元18(及/或17,若有的話)實現的射束偏折可能不精確地對應至由控制器11及/或模組23指示的預期偏折,亦即,可能有偏折偏差。在此情形下,射束不會精確地遵循預期測量路徑而且這可能導致測得性質的失真,因為例如射束不以預期的角度橫越各個元件。因此,該系統最好包括用於偵測及修正任何此類偏折偏差的手段,以及有利的是,這是用基於偵得電訊號間之時間間隔的訊號處理器24實作。 As mentioned above, the beam deflection achieved by the deflection unit 18 (and/or 17, if any) may not correspond exactly to the expected deflection indicated by the controller 11 and/or the module 23, ie, There may be deviations in deflection. In this case, the beam does not exactly follow the expected measurement path and this may result in distortion of the measured properties, because for example the beam does not traverse the individual elements at the desired angle. Accordingly, the system preferably includes means for detecting and correcting any such deviations, and advantageously, this is accomplished by a signal processor 24 based on the time interval between detected electrical signals.

以下描述用於示範場景的適當技術,其中,使用圓形測量路徑以及如第15圖所示的探針,亦即,有4條交叉傳導絲有效地形成有從交叉點徑向延伸之長形方向的8個元件。該圓形測量路徑經設計成定中心於交叉點上使得它以相同的角度(90度)橫越各個元件。在一實驗中,射束經驅動成以10kHz的恆定頻率遵循此測量路徑(亦即,每秒完成10,000個路徑電路)。該射束經設計成在100kV有0.25mA的射束電流,以及清晰的聚焦。第18圖的曲線圖示(i)在y軸方向供給至偏折單元(或數個)的次級偏折訊號,單位為伏特與時間(顯示圓形偏折的時段),以及(ii)偵得電訊號。區域C對應至路徑的一電路,在此期間該等元件會被交叉8次,因此會偵測到8個電訊號(1)至(8)。 A suitable technique for an exemplary scenario is described below in which a circular measurement path and a probe as shown in Fig. 15 are used, that is, four intersecting conductive wires are effectively formed with elongated shapes extending radially from the intersection. 8 components in the direction. The circular measurement path is designed to be centered at the intersection so that it traverses the various elements at the same angle (90 degrees). In one experiment, the beam was driven to follow this measurement path at a constant frequency of 10 kHz (ie, 10,000 path circuits were completed per second). The beam is designed to have a beam current of 0.25 mA at 100 kV with clear focus. Figure 18 is a graph showing (i) the secondary deflection signal supplied to the deflection unit (or several) in the y-axis direction, in volts and time (the period in which the circular deflection is shown), and (ii) Detected the telegraph. Region C corresponds to a circuit of the path during which the components are crossed 8 times, so 8 electrical signals (1) through (8) are detected.

該訊號處理器測量每對相鄰訊號的時間間隔△T。例如,訊號(1)與(2)的間隔為△T12。如果射束準確地遵循所欲測量路徑,每對相鄰訊號的間隔△T應相等,亦即,△T12=△T23=△T34、等等。在第18圖的情形下,由圖形可見,該等間隔不相等顯示射束不精確地遵循預期測量路徑,例如,它可能偏心,或可能不夠圓,亦即,在預期射束偏折(編碼於偏折控制訊號中)與實際實現的之間有偏差。結果,訊號寬度及峰值也彼此不同,同時在某種程度上,這可能表明射束的性質隨著方向而改變,這也會是由於射束以不是90度的某個未知角度橫越各個元件。 The signal processor measures the time interval ΔT of each pair of adjacent signals. For example, the interval between the signals (1) and (2) is ΔT 12 . If the beam accurately follows the desired measurement path, the interval ΔT of each pair of adjacent signals should be equal, that is, ΔT 12 = ΔT 23 = ΔT 34 , and so on. In the case of Figure 18, as seen by the graph, the equally unequal display beam does not accurately follow the expected measurement path, for example, it may be eccentric, or may not be round enough, i.e., at the expected beam deflection (encoding There is a deviation between the deflection control signal and the actual implementation. As a result, the signal width and peak are also different from each other, and to some extent this may indicate that the nature of the beam changes with direction, which is also because the beam traverses the individual components at an unknown angle other than 90 degrees. .

為了修正此事,訊號處理器最好基於△T的差異來產生及輸出回饋訊號至該(等)偏折單元。經由適當演算法,基於該回饋來調整該偏折控制以便減少測得△T值之間的任何差異,在射束已知會遵循預期路徑的點減到零為較佳。然後用上述原理,基於隨後偵得的電訊號,可準確地測量射束性質。 In order to correct this, the signal processor preferably generates and outputs a feedback signal to the (equal) deflection unit based on the difference in ΔT. Adjusting the deflection control based on the feedback via an appropriate algorithm to reduce any difference between the measured ΔT values is preferred to reduce the point at which the beam is expected to follow the expected path to zero. Then using the above principle, the beam properties can be accurately measured based on the subsequently detected electrical signals.

儘管如上述利用圓形測量路徑及徑向延伸探針元件來實作此一技術特別較佳,然而這不是必需的。例如,基於計畫測量路徑及已知探針幾何,可算出每對相鄰訊號的(絕對或相對)△T預期值,以及回饋演算法可經設計成調整射束偏折直到獲得這些預期值。不過,該計算用上述實作簡化,因為所有預期△T值會相等。 Although it is particularly preferred to implement this technique using circular measurement paths and radially extending probe elements as described above, this is not required. For example, based on the planned measurement path and the known probe geometry, the (absolute or relative) ΔT expected value for each pair of adjacent signals can be calculated, and the feedback algorithm can be designed to adjust the beam deflection until these expected values are obtained. . However, this calculation is simplified with the above implementation because all expected ΔT values will be equal.

也可儲存用此技術計算及應用的修正以及使用於由加入該系統的工具執行的未來處理期間,藉此校 準該工具。 It can also store corrections calculated and applied using this technology and during future processing performed by tools added to the system. The tool is available.

以下為本發明系統及方法之較佳具體實施例的一些優點: The following are some of the advantages of preferred embodiments of the system and method of the present invention:

‧致能射束性質在遍及工作區的許多分散位置的量化測量,例如寬度、形狀及/或強度,包括高射束偏折角度。 ‧Enhanced beam properties are quantified measurements at many discrete locations throughout the work area, such as width, shape, and/or strength, including high beam deflection angles.

‧各個探針微小使得它在工作區上靠近探針位置處測量射束為較佳。 ‧ Each probe is tiny such that it is better to measure the beam at the location close to the probe on the work area.

‧使用例如接線的長形傳導元件允許與射束著陸角度無關地測量,因此探針準確地起作用,甚至對於高偏折角度。 • The use of elongated conductive elements such as wires allows measurements to be made independently of the beam landing angle, so the probes act accurately, even for high deflection angles.

‧探針可全部連接在一起而簡化真空室連接:只需要單一通孔。 ‧ Probes can all be connected together to simplify vacuum chamber connections: only a single via is required.

‧該系統允許在整個工作區上方測量而不需要任何人工調整探針部件或操作員介入,因此在真空室的情形下,可迅速完成射束特徵化以及在機器的單一抽氣循環內。 ‧ The system allows measurement over the entire work area without any manual adjustment of the probe components or operator intervention, so in the case of a vacuum chamber, beam characterization can be done quickly and within a single pumping cycle of the machine.

‧射束偏折與資料收集的整合提供全自動測量;一旦測量路徑被初始化,就不需要操作員輸入。 • Integration of beam deflection and data collection provides fully automated measurements; once the measurement path is initialized, no operator input is required.

‧射束測量值的收集可極快(例如,數十個位置在1秒以下)。 ‧ Beam measurements can be collected very quickly (for example, dozens of locations below 1 second).

‧在單一機器抽氣循環中可做成所有測量,這允許短的總測量時間。 • All measurements can be made in a single machine pumping cycle, which allows for a short total measurement time.

‧較佳圓形射束偏折允許高速偏折用起來有準確的射束定位及速度,使得能探測高功率射束。 ‧The preferred circular beam deflection allows for high speed deflection with accurate beam positioning and velocity, enabling detection of high power beams.

‧沒有活動部件,簡單的操作員設置。 ‧ No moving parts, simple operator settings.

‧該探針系統可輕易地加裝至現有射束產生器或整合於材料加工工具。 ‧ The probe system can be easily retrofitted to existing beam generators or integrated into material processing tools.

21‧‧‧探針組件 21‧‧‧ probe assembly

21a‧‧‧屏蔽引線 21a‧‧‧Shielded leads

22‧‧‧偵測模組 22‧‧‧Detection module

23‧‧‧射束偏折控制模組 23‧‧‧Ball deflection control module

24‧‧‧訊號處理器或電腦 24‧‧‧ Signal Processor or Computer

30a、30b、30c‧‧‧探針 30a, 30b, 30c‧‧ ‧ probe

33a、33b、34a、34b‧‧‧元件 33a, 33b, 34a, 34b‧‧‧ components

Claims (82)

一種系統,用以測量由帶電粒子束產生器輸出之帶電粒子束的性質,其係包括:一探針組件,其係包括在一片框上橫越一平面地排成陣列的多個探針,各個探針包括至少兩個長形導電元件經配置成彼等的各自長形方向在該陣列之平面中互相形成一非零角度;一射束偏折控制模組,適合控制該帶電粒子束沿著一測量路徑的偏折,該測量路徑依序橫越該等探針中之至少一者的該等長形導電元件中之至少兩個;以及一偵測模組,連接至該等多個探針中之每一者的該等導電元件,其適合偵測由各個探針之該等導電元件依序在與該帶電粒子束交叉時輸出的電訊號,來自各個探針的該等偵得電訊號表明該帶電粒子束在用該帶電粒子束產生器遍及該探針組件地指向各個探針之位置時的性質。 A system for measuring the properties of a charged particle beam output by a charged particle beam generator, comprising: a probe assembly comprising a plurality of probes arranged in an array across a plane on a frame, Each of the probes includes at least two elongate conductive elements configured such that their respective elongate directions form a non-zero angle with each other in the plane of the array; a beam deflection control module adapted to control the charged particle beam edge a deflection of a measurement path that sequentially traverses at least two of the elongate conductive elements of at least one of the probes; and a detection module coupled to the plurality of The conductive elements of each of the probes are adapted to detect the electrical signals output by the conductive elements of the respective probes in sequence when intersecting the charged particle beam, the detections from the respective probes The electrical signal indicates the nature of the charged particle beam as it is directed across the probe assembly to the position of the respective probes. 如申請專利範圍第1項所述之系統,其中,該偵測模組更適合識別那一個探針中之那一個長形導電元件為各個偵得電訊號的來源。 The system of claim 1, wherein the detecting module is more suitable for identifying the long conductive element of the probe as a source of each detected electrical signal. 如申請專利範圍第1項或第2項所述之系統,其中,各個探針的該等長形導電元件彼此互相電氣接觸,以及視需要互相整合。 The system of claim 1 or 2, wherein the elongate conductive elements of the respective probes are in electrical contact with each other and integrated with each other as needed. 如申請專利範圍第3項所述之系統,其中,各個探針的該等長形導電元件與其他探針的並聯或串聯連接,以及 該偵測模組適合在一單一通道上接收由該探針組件之該等導電元件輸出的該等電訊號。 The system of claim 3, wherein the elongated conductive elements of each probe are connected in parallel or in series with other probes, and The detection module is adapted to receive the electrical signals output by the conductive elements of the probe assembly on a single channel. 如申請專利範圍第3項或第4項所述之系統,其中,該偵測模組包括一關聯部,適合識別那一個探針中之那一個導電元件為各個偵得電訊號的來源,其係基於該測量路徑的知識以及各個電訊號的偵測時間及/或者是偵測該等電訊號的順序。 The system of claim 3, wherein the detection module includes an association portion adapted to identify the one of the probes as a source of each detected electrical signal. It is based on the knowledge of the measurement path and the detection time of each electrical signal and/or the order in which the electrical signals are detected. 如申請專利範圍第5項所述之系統,其中,該測量路徑之該知識由已存入測量路徑資料的一記憶體提供,該儲存測量路徑資料最好包括:該射束的起始位置,將會被該射束遵循的路徑,以及視需要,至少在與該等導電元件的交叉點處之該射束的速度。 The system of claim 5, wherein the knowledge of the measurement path is provided by a memory that has been stored in the measurement path data, the stored measurement path data preferably including: a starting position of the beam, The path that will be followed by the beam, and, if desired, at least at the intersection of the conductive elements. 如申請專利範圍第5項所述之系統,其中,該測量路徑之該知識由一射束位置監測部提供,其適合從該帶電粒子束產生器及/或該射束偏折控制模組接收關於該射束之目前偏折的資訊。 The system of claim 5, wherein the knowledge of the measurement path is provided by a beam position monitoring unit adapted to receive from the charged particle beam generator and/or the beam deflection control module Information about the current deflection of the beam. 如申請專利範圍第5項所述之系統,其中,該測量路徑之該知識一起由已存入測量路徑資料的一記憶體以及一射束位置監測部提供,該射束位置監測部適合從該帶電粒子束產生器及/或該射束偏折控制模組接收關於該射束之目前偏折的資訊。 The system of claim 5, wherein the knowledge of the measurement path is provided by a memory that has been stored in the measurement path data and a beam position monitoring unit, and the beam position monitoring unit is adapted to The charged particle beam generator and/or the beam deflection control module receives information regarding the current deflection of the beam. 如申請專利範圍第1項至第8項中之任一項所述的系統,其中,該帶電粒子束產生器包括一初級射束偏折單元與一初級控制器,適合產生及輸出一初級控制訊號給 該初級射束偏折單元,用以引導該射束至一選定位置或沿著一初級射束路徑移動,以及該射束偏折控制模組包括一次級控制器,經組配成輸出一次級控制訊號而疊加於由該初級控制器輸出的該初級控制訊號,該次級控制訊號界定一次級射束路徑,使得該初級射束偏折單元引導該射束沿著為該次級射束路徑與任何初級射束路徑之一組合的該測量路徑移動。 The system of any one of clauses 1 to 8, wherein the charged particle beam generator comprises a primary beam deflecting unit and a primary controller adapted to generate and output a primary control Signal to The primary beam deflecting unit is configured to guide the beam to a selected position or to move along a primary beam path, and the beam deflection control module includes a primary controller that is assembled to output a primary stage The control signal is superimposed on the primary control signal output by the primary controller, the secondary control signal defining a primary beam path such that the primary beam deflection unit directs the beam along the secondary beam path The measurement path moves in combination with one of any primary beam paths. 如申請專利範圍第1項至第8項中之任一項所述的系統,其中,該帶電粒子束產生器包括一初級射束偏折單元與一初級控制器,適合產生及輸出一初級控制訊號給該初級射束偏折單元,用以引導該射束至一選定位置或沿著一初級射束路徑移動,以及該射束偏折控制模組包括設置於該初級射束偏折單元之下游的一次級射束偏折單元以及一次級控制器,經組配成輸出一次級控制訊號至該次級射束偏折單元,該次級控制訊號界定一次級射束路徑,使得該初級及該次級射束偏折單元一起引導該射束沿著為該次級射束路徑與任何初級射束路徑之一組合的該測量路徑移動。 The system of any one of clauses 1 to 8, wherein the charged particle beam generator comprises a primary beam deflecting unit and a primary controller adapted to generate and output a primary control Signaling to the primary beam deflecting unit for directing the beam to a selected position or along a primary beam path, and the beam deflection control module includes a primary beam deflection unit a downstream primary beam deflecting unit and a primary controller are configured to output a primary control signal to the secondary beam deflecting unit, the secondary control signal defining a primary beam path, such that the primary The secondary beam deflecting unit together directs the beam to move along the measurement path that is combined with one of the primary beam paths and any of the primary beam paths. 如申請專利範圍第9項或第10項所述之系統,其中,該射束偏折控制模組包括一監測部,適合從該帶電粒子束產生器接收關於該射束之目前偏折的資訊,來自該初級控制器的該初級控制訊號為較佳,以及回應收到的資訊而輸出該次級控制訊號。 The system of claim 9 or 10, wherein the beam deflection control module comprises a monitoring unit adapted to receive information about the current deflection of the beam from the charged particle beam generator. The primary control signal from the primary controller is preferred, and the secondary control signal is output in response to the received information. 如申請專利範圍第11項所述之系統,其中,該射束偏 折控制模組適合回應該射束偏折到達一或更多預定義觸發位置而輸出該次級控制訊號,各個預定義觸發位置對應至該等探針中之一不同者的位置為較佳。 The system of claim 11, wherein the beam is biased The folding control module is adapted to output the secondary control signal by returning the beam deflection to one or more predefined trigger positions, and each of the predefined trigger positions is preferably corresponding to a position of one of the probes. 如申請專利範圍第12項所述之系統,其中,該初級控制訊號係經組態成依序引導該射束至各自對應至一不同探針且各自為一預定義觸發位置的多個離散位置,藉此在到達各個離散位置時,該射束被該射束偏折控制模組偏折成沿著對應至該次級射束路徑的該測量路徑移動。 The system of claim 12, wherein the primary control signal is configured to sequentially direct the beam to a plurality of discrete locations each corresponding to a different probe and each being a predefined trigger location Thereby, upon reaching each discrete position, the beam is deflected by the beam deflection control module to move along the measurement path corresponding to the secondary beam path. 如申請專利範圍第9項至第13項中之任一項所述的系統,其中,由該次級控制器輸出的該次級控制訊號界定一實質圓形或弓形偏折路徑,具有一恆定射束速度為較佳。 The system of any one of clauses 9 to 13, wherein the secondary control signal output by the secondary controller defines a substantially circular or arcuate deflection path having a constant The beam speed is preferred. 如申請專利範圍第14項所述之系統,其中,該次級控制器適合依靠該射束之該偏折角度來修改該次級控制訊號,最好藉由對各個探針位置施加一橢圓修正用偏折使得該射束在該探針組件上所遵循的該路徑在該陣列的各個探針處為實質圓形或弓形。 The system of claim 14, wherein the secondary controller is adapted to modify the secondary control signal by the deflection angle of the beam, preferably by applying an ellipse correction to each probe position. The path followed by the deflection such that the beam follows the probe assembly is substantially circular or arcuate at each probe of the array. 如申請專利範圍第1項至第15項中之任一項所述的系統,其中,該測量路徑包括至少一線段橫越該等探針中之一者的該等長形導電元件中之至少兩個,全部為較佳,該線段為實質圓形或遵循一實質圓弧。 The system of any one of clauses 1 to 15, wherein the measuring path comprises at least one line segment traversing at least one of the elongate conductive elements of one of the probes Two, all preferred, the line segments are substantially circular or follow a substantial arc. 如申請專利範圍第1項至第16項中之任一項所述的系統,其中,該測量路徑包括多個線段,各個線段橫越該 等探針中之一者的該等長形導電元件中之至少兩個,全部為較佳,各個線段與該等探針中之一不同者交叉。 The system of any one of clauses 1 to 16, wherein the measurement path comprises a plurality of line segments, each line segment traversing the line At least two of the elongate conductive elements of one of the probes are all preferred, and each line segment intersects a different one of the probes. 如申請專利範圍第17項所述之系統,其中,該測量路徑在該等線段之間不連續。 The system of claim 17, wherein the measurement path is discontinuous between the line segments. 如申請專利範圍第16項、第17項或第18項所述之系統,其中,該或各個線段的起點及/或終點與該等長形導電元件中之任一者不重合。 The system of claim 16, wherein the starting point and/or the ending point of the or each line segment does not coincide with any of the elongate conductive elements. 如申請專利範圍第1項至第19項中之任一項所述的系統,其中,該等探針各自更包括一標記元件,其係導電且寬度大於該等長形導電元件在被該測量路徑橫越之方向的寬度,該測量路徑另外橫越該標記元件,藉此由各個標記元件在與該帶電粒子束交叉時輸出的一電訊號有大於該等長形元件所輸出的峰值振幅,以及其中,該偵測模組適合至少部份基於由該標記元件輸出的該電訊號來識別在一探針內的那一個長形導電元件為各個偵得電訊號的來源。 The system of any one of clauses 1 to 19, wherein each of the probes further comprises a marking element that is electrically conductive and has a width greater than the isometric conductive element being measured a width of the direction in which the path traverses, the measurement path additionally traversing the marking element, whereby an electrical signal output by each marking element when intersecting the charged particle beam is greater than a peak amplitude output by the elongate element, And wherein the detecting module is adapted to identify the elongated conductive element in a probe as a source of each detected electrical signal based at least in part on the electrical signal output by the marking component. 如申請專利範圍第20項和第5項至第8項中之任一項所述的系統,其中,該偵測模組適合識別該探針為各個偵得電訊號的來源係基於該測量路徑的知識以及各個電訊號的偵測時間及/或者是偵測該等電訊號的該或一順序,以及至少部份基於由該標記元件輸出的該電訊號來識別該識得探針之該長形導電元件為各個偵得電訊號的來源。 The system of claim 20, wherein the detection module is adapted to identify the probe as a source of each detected electrical signal based on the measurement path. And the detection time of each of the electrical signals and/or the sequence of detecting the electrical signals, and identifying the length of the identified probe based at least in part on the electrical signal output by the marking component The shaped conductive elements are the source of each detected electrical signal. 如申請專利範圍第1項至第21項中之任一項所述的系 統,其中,各個探針中之該等至少兩個長形導電元件至少包括第一及第二長形導電元件,經配置成彼等的各自長形方向在該陣列之平面中實質互相正交。 The system of any one of claims 1 to 21 The at least two elongate conductive elements of each of the probes include at least first and second elongate conductive elements configured such that their respective elongate directions are substantially orthogonal to one another in the plane of the array . 如申請專利範圍第1項至第22項中之任一項所述的系統,其中,各個探針包括至少3個,或至少4個更佳,之長形導電元件,經配置成彼等的各自長形方向在該陣列之平面中互相形成非零角度,該等各個不同長形方向彼此實質等角地隔開為較佳。 The system of any one of claims 1 to 22, wherein each probe comprises at least 3, or at least 4, more preferably elongated conductive elements configured for their The respective elongate directions form a non-zero angle with each other in the plane of the array, and the respective different elongate directions are preferably substantially equiangularly spaced from one another. 如申請專利範圍第1項至第23項中之任一項所述的系統,其中,各個探針中之該等至少兩個長形導電元件在彼等之間有至少一交叉點,該等元件在此電氣接觸為較佳。 The system of any one of clauses 1 to 23, wherein the at least two elongate conductive elements of each probe have at least one intersection between them, such Electrical contact of the components is preferred here. 如申請專利範圍第24項所述之系統,其中,該等至少兩個長形導電元件經配置成彼等的長形方向從在彼等之間的一交叉點徑向延伸以及以該交叉點為中心等角地互相隔開為較佳。 The system of claim 24, wherein the at least two elongate conductive elements are configured such that their elongate directions extend radially from an intersection between them and at the intersection It is preferred to be equiangularly spaced apart from each other. 如申請專利範圍第25項及第26項所述之系統,其中,該測量路徑包括至少一線段橫越該等探針中之一者的該等長形導電元件中之至少兩個,全部為較佳,該線段為實質圓形或遵循一實質圓弧以及定中心於該等元件之交叉點的位置上,該等長形方向從該交叉點延伸。 The system of claim 25, wherein the measuring path comprises at least one of the at least one of the elongate conductive elements traversing one of the probes, all of which are Preferably, the line segment is substantially circular or follows a substantially circular arc and is centered at the intersection of the elements from which the elongate direction extends. 如申請專利範圍第1項至第26項中之任一項所述的系統,其中,各個探針中之該等至少兩個長形導電元件包括以一非零角度互相交叉的至少兩個傳導絲,該等傳導 絲視需要為一連續傳導絲的不同部份。 The system of any one of clauses 1 to 26, wherein the at least two elongate conductive elements of each probe comprise at least two conductions that intersect each other at a non-zero angle Silk, the conduction The wire is required to be a different part of a continuous conductive filament. 如申請專利範圍第27項所述之系統,其中,該等傳導絲包括接線、扁帶或條帶。 The system of claim 27, wherein the conductive filaments comprise wires, ribbons or strips. 如申請專利範圍第1項至第28項中之任一項所述的系統,其中,該等長形導電元件在該陣列之平面的寬度等於或大於彼等在垂直於該陣列之方向的厚度。 The system of any one of clauses 1 to 28, wherein the width of the elongate conductive elements in the plane of the array is equal to or greater than the thickness of the elongate conductive elements in a direction perpendicular to the array. . 如申請專利範圍第1項至第29項中之任一項所述的系統,其中,各個長形導電元件在該陣列之平面中的寬度小於該帶電粒子束在該陣列平面的直徑,在該帶電粒子束之該直徑的三分之一至三分之二之間為較佳。 The system of any one of clauses 1 to 29 wherein the width of each elongate conductive element in the plane of the array is less than the diameter of the charged particle beam in the plane of the array, It is preferred that between one third and two thirds of the diameter of the charged particle beam. 如申請專利範圍第1項至第30項中之任一項所述的系統,其中,各個長形導電元件在該陣列之平面中的寬度在5至200微米之間。 The system of any one of clauses 1 to 30, wherein each elongate conductive element has a width in the plane of the array of between 5 and 200 microns. 如申請專利範圍第1項至第31項中之任一項所述的系統,其中,該等至少兩個長形導電元件至少沿著彼等的長度之一部份互相隔開的距離至少等於,大於為較佳,該帶電粒子束在該陣列平面的直徑。 The system of any one of clauses 1 to 31, wherein the at least two elongate conductive elements are spaced apart from each other by at least a distance along at least one of their lengths. Greater than, preferably, the diameter of the charged particle beam in the plane of the array. 如申請專利範圍第1項至第32項中之任一項所述的系統,其中,該等至少兩個長形導電元件至少沿著彼等的長度之一部份互相隔開至少有0.5毫米,至少1毫米為更佳。 The system of any one of clauses 1 to 32, wherein the at least two elongate conductive elements are at least 0.5 mm apart from each other along at least one of their lengths. , at least 1 mm is better. 如申請專利範圍第1項至第33項中之任一項所述的系統,其中,各個探針包括一框體,經組配成在橫越由該框體界定之一孔口的至少兩個點處支撐該等長形導電 元件。 The system of any one of claims 1 to 33, wherein each of the probes comprises a frame that is assembled to traverse at least two of the apertures defined by the frame Supporting these elongated conductive points at points element. 如申請專利範圍第34項所述之系統,其中,該框體包括一管部,圓柱形管部為較佳,該等長形導電元件經配置成橫越該管部的一端或兩端。 The system of claim 34, wherein the frame comprises a tube portion, preferably a cylindrical tube portion, the elongate conductive members being configured to traverse one or both ends of the tube portion. 如申請專利範圍第34項或第35項所述之系統,其中,該框體包括一導電部份,經組配成使該等至少兩個長形導電元件連接至與該偵測模組連接的一電路。 The system of claim 34, wherein the frame comprises a conductive portion that is configured to connect the at least two elongated conductive elements to the detection module. a circuit. 如申請專利範圍第1項至第36項中之任一項所述的系統,其中,該等多個探針的配置根據遍及該陣列的一規則網格以及包括一探針在該帶電粒子束產生器的該軸線上為較佳。 The system of any one of clauses 1 to 36, wherein the plurality of probes are configured according to a regular grid throughout the array and including a probe in the charged particle beam This axis of the generator is preferred. 如申請專利範圍第1項至第37項中之任一項所述的系統,其中,該片框包括一板子,具有該等多個探針設置於其中的多個孔口,該板子最好導電以及視需要經組配成提供一電氣連接於該等探針之間以及連接至該偵測模組的一電路。 The system of any one of claims 1 to 37, wherein the frame comprises a plate having a plurality of apertures in which the plurality of probes are disposed, the plate preferably Conductive and, if desired, assembled to provide a circuit electrically coupled between the probes and to the detection module. 如申請專利範圍第1項至第38項中之任一項所述的系統,其中,該探針陣列位於實質垂直於該帶電粒子束產生器之該軸線的一平面中。 The system of any one of clauses 1 to 38, wherein the probe array is located in a plane substantially perpendicular to the axis of the charged particle beam generator. 如申請專利範圍第1項至第39項中之任一項所述的系統,其更包括一訊號處理器,適合基於該等偵得電訊號與該射束測量路徑的知識來計算該射束的性質。 The system of any one of claims 1 to 39, further comprising a signal processor adapted to calculate the beam based on the knowledge of the detected electrical signals and the beam measurement path The nature. 如申請專利範圍第40項所述之系統,其中,該訊號處理器適合計算在至少一探針位置處該射束在至少兩個 方向的寬度,其係基於來自該各個探針之該等至少兩個長形導電元件的該等偵得電訊號,以及該射束橫越該等元件的速度知識。 The system of claim 40, wherein the signal processor is adapted to calculate that the beam is at least two at at least one probe position The width of the direction is based on the detected electrical signals from the at least two elongate conductive elements of the respective probes, and the speed knowledge of the beam across the elements. 如申請專利範圍第40項或第41項所述之系統,其中,該訊號處理器適合計算在至少一探針位置處該射束在至少兩個方向的強度輪廓,其係基於來自該各個探針之該等至少兩個長形導電元件的該等偵得電訊號,以及該射束的寬度知識。 The system of claim 40, wherein the signal processor is adapted to calculate an intensity profile of the beam in at least two directions at at least one probe position based on the respective probes The detected electrical signals of the at least two elongated conductive elements of the pin, and the knowledge of the width of the beam. 如申請專利範圍第40項至第42項中之任一項所述的系統,其中,該訊號處理器適合計算在至少一探針位置處該射束在兩個維度的一強度圖,其係藉由層析重建來自該各個探針之該等至少兩個長形導電元件的該等偵得電訊號。 The system of any one of claims 40 to 42, wherein the signal processor is adapted to calculate an intensity map of the beam in two dimensions at at least one probe position, The detected electrical signals from the at least two elongate conductive elements of the respective probes are reconstructed by chromatography. 如申請專利範圍第40項至第43項中之任一項所述的系統,其中,該訊號處理器適合計算在該等多個探針位置中之每一者處該射束在至少兩個方向的性質,較佳包括該射束之該寬度,該射束之該強度輪廓,該射束之該強度圖,及/或該射束者。 The system of any one of claims 40 to 43 wherein the signal processor is adapted to calculate that the beam is at least two at each of the plurality of probe positions The nature of the direction preferably includes the width of the beam, the intensity profile of the beam, the intensity map of the beam, and/or the beamer. 如申請專利範圍第40項至第44項中之任一項所述的系統,其中,在計算該射束之該等性質前,該訊號處理器適合在至少一探針位置處偵測該射束的任何偏折偏差,其係基於來自該各個探針之該等至少兩個長形導電元件的相鄰偵得電訊號之間的間隔,以及產生及輸出一偏折偏差回饋訊號給該帶電粒子束產生器以藉此修正 該偏折偏差。 The system of any one of claims 40 to 44, wherein the signal processor is adapted to detect the shot at at least one probe position before calculating the properties of the beam Any deviation deviation of the beam based on the spacing between adjacent detected electrical signals from the at least two elongated conductive elements of the respective probes, and generating and outputting a bias deviation feedback signal to the charged Particle beam generator to correct This deflection deviation. 如申請專利範圍第1項至第45項中之任一項所述的系統,其更包括一回饋模組,用以產生及供應一回饋訊號給該帶電粒子束產生器以藉此基於該系統所測得的該等性質來調整該帶電粒子束的該等性質。 The system of any one of claims 1 to 45, further comprising a feedback module for generating and supplying a feedback signal to the charged particle beam generator, whereby the system is based thereon The properties are measured to adjust the properties of the charged particle beam. 如申請專利範圍第1項至第46項中之任一項所述的系統,其中,該帶電粒子束為一電子束或一離子束。 The system of any one of claims 1 to 46, wherein the charged particle beam is an electron beam or an ion beam. 一種設備,其係包括一帶電粒子束產生器與如申請專利範圍第1項至第47項中之任一項所述的一系統經組配成測量該帶電粒子束由該帶電粒子束產生器輸出的數個性質。 An apparatus comprising a charged particle beam generator and a system according to any one of claims 1 to 47, wherein the charged particle beam is measured by the charged particle beam generator Several properties of the output. 如申請專利範圍第48項所述之設備,其中,該帶電粒子束產生器包括一帶電粒子源,一粒子加速單元用於沿著一軸線加速來自該粒子源之帶電粒子以形成一帶電粒子束,一初級偏折單元適合使該帶電粒子束偏折遠離該軸線以及一初級控制器適合輸出一初級控制訊號用於控制該初級偏折單元所施加的偏折。 The apparatus of claim 48, wherein the charged particle beam generator comprises a charged particle source, and a particle acceleration unit is configured to accelerate charged particles from the particle source along an axis to form a charged particle beam. A primary deflection unit is adapted to deflect the charged particle beam away from the axis and a primary controller is adapted to output a primary control signal for controlling the deflection applied by the primary deflection unit. 一種材料加工工具,其係包括如申請專利範圍第48項或第49項所述的一設備,其中,該工具為下列中之一者:一電子束焊接工具,該帶電粒子束適合用來焊接材料;一加層製造工具,該帶電粒子束適合用來處理粉末材料,融合彼等為較佳; 一固化工具,該帶電粒子束適合用來固化一工件;一切割工具,該帶電粒子束適合用來切割材料;一熔化或氣化工具,該帶電粒子束適合用來熔化及/或氣化材料;該工具為一氣體處理工具,該帶電粒子束適合用來處理氣體物質,燃燒煙霧為較佳;一消毒工具,該帶電粒子束適合用來消毒固體或液體;一鑽孔工具,該帶電粒子束適合用於一工件之鑽孔;或一材料紋理化工具,該帶電粒子束適合用來形成數個突出物或結構於一工件上。 A material processing tool comprising: an apparatus according to claim 48 or claim 49, wherein the tool is one of: an electron beam welding tool, the charged particle beam is suitable for welding Material; a layered manufacturing tool, the charged particle beam is suitable for processing powder materials, and it is preferred to fuse them; a curing tool, the charged particle beam is suitable for curing a workpiece; a cutting tool, the charged particle beam is suitable for cutting a material; a melting or gasification tool, the charged particle beam is suitable for melting and/or gasifying the material The tool is a gas processing tool, the charged particle beam is suitable for treating gaseous substances, burning smoke is preferred; a disinfecting tool, the charged particle beam is suitable for disinfecting solid or liquid; a drilling tool, the charged particle The bundle is suitable for use in drilling a workpiece; or a material texturing tool suitable for forming a plurality of protrusions or structures on a workpiece. 一種測量由帶電粒子束產生器輸出的帶電粒子束之性質的方法,該方法包含下列步驟:提供一探針組件,其係包括在一片框上橫越一平面地排成陣列的多個探針,各個探針包括至少兩個長形導電元件經配置成彼等的各自長形方向在該陣列之平面中互相形成一非零角度;控制該帶電粒子束之該偏折以遵循一測量路徑依序橫越該等探針中之至少一者的該等長形導電元件中之至少兩個;以及偵測由各個探針之該等導電元件依序在與該帶電粒子束交叉時輸出的電訊號,來自各個探針的該等偵得電訊號表明該帶電粒子束在指向該各個探針之該位置 時的性質。 A method of measuring the properties of a charged particle beam output by a charged particle beam generator, the method comprising the steps of: providing a probe assembly comprising a plurality of probes arranged in an array across a plane on a frame Each probe includes at least two elongate conductive elements configured such that their respective elongate directions form a non-zero angle with each other in the plane of the array; controlling the deflection of the charged particle beam to follow a measurement path And traversing at least two of the elongate conductive elements of at least one of the probes; and detecting telecommunications output by the conductive elements of the respective probes in sequence when intersecting the charged particle beam Number, the detected electrical signals from the respective probes indicate that the charged particle beam is at the location pointing to the respective probe The nature of the time. 如申請專利範圍第51項所述之方法,其更包括識別那一個探針中之那一個長形導電元件為各個偵得電訊號的來源。 The method of claim 51, further comprising identifying the one of the probes as the source of each of the detected electrical signals. 如申請專利範圍第51項或第52項所述之方法,其中,在一單一通道上偵測由一探針中之該等至少兩個長形導電元件輸出的至少所有該等電訊號。 The method of claim 51, wherein the at least all of the electrical signals output by the at least two elongate conductive elements of a probe are detected on a single channel. 如申請專利範圍第53項所述之方法,其中,在一單一通道上偵測由該等多個探針輸出的所有該等電訊號。 The method of claim 53, wherein all of the electrical signals output by the plurality of probes are detected on a single channel. 如申請專利範圍第53項或第54項所述之方法,其更包括關聯各個偵得電訊號與為其來源的導電元件,其係基於該測量路徑的知識以及各個電訊號的偵測時間及/或者是偵測該等電訊號的順序。 The method of claim 53 or 54 further includes associating each detected electrical signal with a conductive component derived therefrom based on the knowledge of the measurement path and the detection time of each electrical signal and / or the order in which the signals are detected. 如申請專利範圍第55項所述之方法,其係包括:擷取儲存的測量路徑資料以提供該測量路徑之該知識,該儲存測量路徑資料最好包括:該射束的起始位置,將會被該射束遵循的路徑,以及視需要,至少在與該等導電元件的交叉點處之該射束的速度。 The method of claim 55, comprising: extracting stored measurement path data to provide the knowledge of the measurement path, the stored measurement path data preferably including: a starting position of the beam, The path that will follow the beam and, if desired, at least at the intersection of the conductive elements. 如申請專利範圍第55項所述之方法,其係包括:監測該射束的目前偏折以提供該測量路徑之該知識。 The method of claim 55, comprising: monitoring a current deflection of the beam to provide the knowledge of the measurement path. 如申請專利範圍第55項所述之方法,其係包括擷取儲存的測量路徑資料以及監測該射束的目前偏折以一起提供該測量路徑之該知識。 The method of claim 55, comprising extracting the stored measurement path data and monitoring the current deflection of the beam to provide the knowledge of the measurement path together. 如申請專利範圍第51項至第58項中之任一項所述的方 法,其中,該帶電粒子束產生器包括一初級射束偏折單元與一初級控制器,適合產生及輸出一初級控制訊號給該初級射束偏折單元用以引導該射束至一選定位置或沿著一初級射束路徑移動,以及控制該帶電粒子束之該偏折以遵循該測量路徑的步驟包括:輸出一次級控制訊號而疊加於由該初級控制器輸出的該初級控制訊號,該次級控制訊號界定一次級射束路徑,使得該初級射束偏折單元引導該射束沿著為該次級射束路徑與任何初級射束路徑之一組合的該測量路徑移動。 The party described in any one of claims 51 to 58 The method, wherein the charged particle beam generator comprises a primary beam deflecting unit and a primary controller adapted to generate and output a primary control signal to the primary beam deflecting unit for directing the beam to a selected position Or moving along a primary beam path, and controlling the deflection of the charged particle beam to follow the measurement path includes: outputting a primary control signal superimposed on the primary control signal output by the primary controller, The secondary control signal defines a primary beam path such that the primary beam deflection unit directs the beam to move along the measurement path that is combined with one of the primary beam paths and any of the primary beam paths. 如申請專利範圍第51項至第59項中之任一項所述的方法,其中,該帶電粒子束產生器包括一初級射束偏折單元與一初級控制器,適合產生及輸出一初級控制訊號給該初級射束偏折單元用以引導該射束至一選定位置或沿著一初級射束路徑移動,以及該控制該帶電粒子束之該偏折以遵循該測量路徑的步驟包括:輸出一次級控制訊號給設置於該初級射束偏折單元之下游的一次級射束偏折單元,該次級控制訊號界定一次級射束路徑,使得該初級及該次級射束偏折單元一起引導該射束沿著為該次級射束路徑與任何初級射束路徑之一組合的該測量路徑移動。 The method of any one of clauses 51 to 59, wherein the charged particle beam generator comprises a primary beam deflecting unit and a primary controller adapted to generate and output a primary control Signaling to the primary beam deflecting unit for directing the beam to a selected position or along a primary beam path, and the step of controlling the deflection of the charged particle beam to follow the measurement path includes: outputting a secondary control signal to a primary beam deflecting unit disposed downstream of the primary beam deflecting unit, the secondary control signal defining a primary beam path such that the primary and secondary beam deflecting units are together The beam is directed to move along the measurement path that is combined with one of the primary beam paths and any of the primary beam paths. 如申請專利範圍第59項或第60項所述之方法,其更包括監測該射束的目前偏折,以及其中,該次級控制訊號的輸出係回應被監測的偏折。 The method of claim 59, wherein the method further comprises monitoring a current deflection of the beam, and wherein the output of the secondary control signal is in response to the monitored deflection. 如申請專利範圍第61項所述之方法,其中,該次級控 制訊號的輸出係回應該射束偏折到達一或更多預定義觸發位置,各個預定義觸發位置對應至該等探針中之一不同者的位置為較佳。 The method of claim 61, wherein the secondary control The output of the signal is back to the beam deflection to one or more predefined trigger positions, and each predefined trigger position is preferably corresponding to a different one of the probes. 如申請專利範圍第62項所述之方法,其中,該初級控制訊號依序引導該射束至各自對應至一不同探針且各自為一預定義觸發位置的多個離散位置,藉此在到達各個離散位置時,該射束被偏折成沿著對應至該次級射束路徑的該測量路徑移動。 The method of claim 62, wherein the primary control signal sequentially directs the beam to a plurality of discrete positions each corresponding to a different probe and each being a predefined trigger position, thereby arriving at At each discrete position, the beam is deflected to move along the measurement path corresponding to the secondary beam path. 如申請專利範圍第51項至第63項中之任一項所述的方法,其中,該測量路徑包括至少一線段橫越該等探針中之一者的該等長形導電元件中之至少兩個,全部為較佳,該線段為實質圓形或遵循一實質圓弧。 The method of any one of clauses 51 to 63, wherein the measuring path comprises at least one line segment traversing at least one of the elongate conductive elements of one of the probes Two, all preferred, the line segments are substantially circular or follow a substantial arc. 如申請專利範圍第64項所述之方法,其中,該等至少兩個長形導電元件經配置成彼等的長形方向從在彼等之間的一交叉點徑向延伸以及以該交叉點為中心等角地互相隔開為較佳,以及該測量路徑包括至少一線段橫越該等探針中之一者的該等長形導電元件中之至少兩個,全部為較佳,該線段為實質圓形或遵循一實質圓弧以及定中心於該等元件之交叉點的位置上,該等長形方向從該交叉點延伸。 The method of claim 64, wherein the at least two elongate conductive elements are configured such that their elongate directions extend radially from an intersection between them and at the intersection Preferably, the measurement is substantially equiangularly spaced apart from each other, and wherein the measurement path includes at least one of the plurality of elongated conductive elements traversing one of the probes, all of which are preferred, the line segment being Substantially circular or following a substantial arc and centered at the intersection of the elements, the elongate directions extend from the intersection. 如申請專利範圍第51項至第65項中之任一項所述的方法,其中,該測量路徑包括多個線段,各個線段橫越該等探針中之一者的該等長形導電元件中之至少兩個,全部為較佳,各個線段與該等探針中之一不同者交叉。 The method of any one of clauses 51 to 65, wherein the measuring path comprises a plurality of line segments, each line segment traversing the elongate conductive element of one of the probes At least two of them are all preferred, and each line segment intersects one of the probes. 如申請專利範圍第66項所述之方法,其中,該測量路徑在該等線段之間不連續。 The method of claim 66, wherein the measurement path is discontinuous between the line segments. 如申請專利範圍第64項至第67項中之任一項所述的方法,其中,該或各個線段的起點及/或終點與該等長形導電元件中之任一者不重合。 The method of any one of claims 64 to 67, wherein the starting point and/or the ending point of the or each line segment does not coincide with any of the elongate conductive elements. 如申請專利範圍第51項至第68項中之任一項所述的方法,其更包括基於該等偵得電訊號與該射束測量路徑的知識來計算該射束的性質。 The method of any one of clauses 51 to 68, further comprising calculating the properties of the beam based on knowledge of the detected electrical signals and the beam measurement path. 如申請專利範圍第69項所述之方法,其中,計算該射束之性質的步驟包括:計算在至少一探針位置處該射束在至少兩個方向的寬度,其係基於來自該各個探針之該等至少兩個長形導電元件的該等偵得電訊號,以及該射束橫越該等元件的速度知識。 The method of claim 69, wherein the calculating the properties of the beam comprises calculating a width of the beam in at least two directions at at least one probe position based on the respective probes The detected electrical signals of the at least two elongated conductive elements of the needle, and the knowledge of the speed at which the beam traverses the elements. 如申請專利範圍第69項或第70項所述之方法,其中,計算該射束之性質的步驟包括:計算在至少一探針位置處該射束在至少兩個方向的強度輪廓,其係基於來自該各個探針之該等至少兩個長形導電元件的該等偵得電訊號,以及該射束的寬度知識。 The method of claim 69, wherein the calculating the properties of the beam comprises: calculating an intensity profile of the beam in at least two directions at at least one probe position, The detected electrical signals based on the at least two elongate conductive elements from the respective probes, and the knowledge of the width of the beam. 如申請專利範圍第69項至第71項中之任一項所述的方法,其中,計算該射束之性質的步驟包括:計算在至少一探針位置處該射束在兩個維度的一強度圖,其係藉由層析重建來自該各個探針之該等至少兩個長形導電元件的該等偵得電訊號。 The method of any one of clauses 69 to 71, wherein the calculating the properties of the beam comprises: calculating one of the two dimensions in the at least one probe position An intensity map that reconstructs the detected electrical signals from the at least two elongate conductive elements of the respective probes by chromatography. 如申請專利範圍第69項至第72項中之任一項所述的方 法,其中,在該等多個探針位置中之每一者處,計算該射束在至少兩個方向的性質,該等性質最好包括該射束之該寬度,該射束之該強度輪廓及/或該射束之該強度圖。 The party as claimed in any one of claims 69 to 72 a method, wherein, at each of the plurality of probe positions, calculating a property of the beam in at least two directions, the properties preferably including the width of the beam, the intensity of the beam The contour and/or the intensity map of the beam. 如申請專利範圍第51項至第73項中之任一項所述的方法,其更包括:產生及供應一回饋訊號給該帶電粒子束產生器以藉此基於該帶電粒子束之該等測得性質來調整該帶電粒子束的該等性質。 The method of any one of clauses 51 to 73, further comprising: generating and supplying a feedback signal to the charged particle beam generator, whereby the measurement based on the charged particle beam Properties are obtained to adjust the properties of the charged particle beam. 如申請專利範圍第69項至第74項中之任一項所述的方法,其係包括:(a)在至少一探針位置處,偵測該射束的任何偏折偏差,其係基於來自該各個探針之該等至少兩個長形導電元件的相鄰偵得電訊號之間的間隔;(b)產生及輸出一偏折偏差回饋訊號給該帶電粒子束產生器以藉此修正該射束在步驟(a)算出的任何偏折偏差;以及隨後(c)基於在修正任何偏折偏差後輸出的該等偵得電訊號來計算該射束之該等性質。 The method of any one of claims 69 to 74, comprising: (a) detecting at least one probe position, detecting any deviation deviation of the beam, based on Interval between adjacent detected electrical signals from the at least two elongated conductive elements of the respective probes; (b) generating and outputting a bias deviation feedback signal to the charged particle beam generator for correction Any deviation of the deflection calculated by the beam in step (a); and (c) calculating the properties of the beam based on the detected electrical signals output after correcting any deflection deviation. 如申請專利範圍第75項所述之方法,其中,該各個探針的該等至少兩個長形導電元件經配置成彼等的長形方向從在彼等之間的一交叉點徑向延伸以及以該交叉點為中心等角地互相隔開,以及該測量路徑包括至少一線段橫越該探針之該等長形導電元件中之至少兩個,全部為較佳,該線段為實質圓形或遵循一實質圓弧以及定 中心於該等元件之交叉點的位置上,該等長形方向從該交叉點延伸,藉此在步驟(a)來自該探針之該等元件的偵得電訊號中之相鄰兩者的間隔有任何差異表明一偏折偏差。 The method of claim 75, wherein the at least two elongate conductive elements of the respective probes are configured such that their elongate directions extend radially from an intersection between them And spaced apart from each other at equal angles around the intersection, and the measuring path includes at least one of the at least two of the elongate conductive elements traversing the probe, preferably all of which are substantially circular Or follow a substantial arc and set Centered at the intersection of the elements, the elongate directions extending from the intersection, whereby in step (a) the adjacent two of the detected electrical signals from the components of the probe Any difference in the interval indicates a bias deviation. 如申請專利範圍第76項所述之方法,其中,在步驟(b)該偏折偏差的修正係藉由調整該射束的偏折直到來自該探針之該等元件的偵得電訊號中之相鄰兩者的間隔有實質等於零的差異。 The method of claim 76, wherein the correction of the deflection deviation in step (b) is performed by adjusting a deflection of the beam until a detected electrical signal of the components from the probe The spacing between adjacent two has a difference substantially equal to zero. 如申請專利範圍第51項至第77項中之任一項所述的方法,其中,該帶電粒子束為一電子束或一離子束。 The method of any one of clauses 51 to 77, wherein the charged particle beam is an electron beam or an ion beam. 一種用於測量帶電粒子束之性質的探針組件,其係包括:在一片框上橫越一平面地排成陣列的多個探針,各個探針包括:界定一孔口的一框體;以及由該框體支撐及橫越該孔口的至少兩個長形導電元件係經配置成彼等的各自長形方向在該框體位於其中的平面中互相形成一非零角度。 A probe assembly for measuring the properties of a charged particle beam, comprising: a plurality of probes arranged in an array across a plane on a frame, each probe comprising: a frame defining an aperture; And at least two elongate conductive elements supported by the frame and traversing the aperture are configured such that their respective elongate directions form a non-zero angle with each other in a plane in which the frame is located. 一種用於測量由帶電粒子束產生器輸出的帶電粒子束之性質的裝置,其係包括:一探針組件,其係包括在一片框上橫越一平面地排成陣列的多個探針,各個探針包括至少兩個長形導電元件經配置成彼等的各自長形方向在該陣列之平面中互相形成一非零角度;一射束偏折單元,適合將該帶電粒子束偏折成沿著 一測量路徑移動;其中,該射束偏折單元在該探針組件上用設置於其間的一支撐組件支撐,該射束偏折單元經定向成,在使用時,藉由該射束偏折單元,該帶電粒子束可偏折遍及該探針組件。 A device for measuring the properties of a charged particle beam output by a charged particle beam generator, comprising: a probe assembly comprising a plurality of probes arranged in an array across a plane on a frame, Each of the probes includes at least two elongate conductive elements configured such that their respective elongate directions form a non-zero angle with each other in the plane of the array; a beam deflecting unit adapted to deflect the charged particle beam into Along a measurement path movement; wherein the beam deflection unit is supported on the probe assembly with a support assembly disposed therebetween, the beam deflection unit being oriented such that, in use, the beam is deflected The unit, the charged particle beam can be deflected throughout the probe assembly. 如申請專利範圍第80項所述之裝置,其中,該支撐組件包括一或更多支撐臂,連接於該探針組件與該射束偏折單元之間。 The device of claim 80, wherein the support assembly includes one or more support arms coupled between the probe assembly and the beam deflection unit. 如申請專利範圍第80項或第81項所述之裝置,其中,該射束偏折單元之該軸線實質垂直於該探針組件之該平面。 The device of claim 80, wherein the axis of the beam deflection unit is substantially perpendicular to the plane of the probe assembly.
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