TW201530682A - Epitaxy reactor and its central star ring for wafer - Google Patents

Abstract

The present invention relates to an epitaxy reactor and its central star ring for wafer. The central star ring is mounted on the center of the casing of the epitaxy reactor and corresponds to the heat source. The central star ring has an inner ring and an outer ring that are detachable from each other. Since the central star ring needs to be clean and replaced frequently, the central star ring is easily damaged. The detachable rings and the improved materials, the outer ring is made of anti-cleaning material. Moreover, with the different materials, the epitaxy environment is changed to enhance the quality of the products. Further, the inner ring is made of anti-thermal shock material so that the inner ring is kept from damaging to reduce the cost.

Description

Wafer epitaxial reactor and its central star disk

The invention relates to a wafer epitaxial reactor and a ceramic star disk thereof, and relates to a reactor for forming an epitaxial process of a tri-five compound semiconductor wafer and an assembly in the reactor.

In the process of the LED die, an epitaxial process is used to form an epitaxial layer on the wafer, and then a subsequent process of coating, yellowing, etching, etc. is performed to obtain a desired LED die. Taking the Metal-organic Chemical Vapor Deposition (MOCVD) method as an example of an epitaxial process, a heat source is disposed at the bottom of the epitaxial reactor, and the wafer is placed on the load-bearing component and placed above the heat source, and the top of the epitaxial reactor A gas inlet is provided, and the organic metal is introduced into the epitaxial reactor through the gas inlet in a gaseous state, and the wafer is heated by the heat source to cause a chemical reaction of the organometallic gas on the wafer to deposit an epitaxial layer.

In the prior art epitaxial reactor, the carrier assembly includes a wafer carrier disposed around the central star disk and the heat source is heated in the reactor to above 1200 ° C to uniformly provide sufficient heat of reaction of the wafer. In the epitaxial process, the epitaxial layer is deposited in all parts of the reactor, so that in addition to forming an epitaxial layer over the wafer, an epitaxial layer is formed on the carrier assembly, so proper removal is necessary. Influencing the subsequent process; however, in the process of removing the epitaxial layer, chemical etching, sand blasting, high-temperature baking, etc. are used for the load-bearing component. During the cleaning process, although the epitaxial layer can be removed, the load-bearing component cannot be avoided. Consumption.

In view of this, the present invention is directed to a star disk used in an epitaxial reactor to reduce the cost loss of the user to extend the service life of the load-bearing component; and the epitaxial environment can be changed by different material properties. To improve product quality.

In order to achieve the above object, the technical means adopted by the present invention is to design a central star disk of an epitaxial reactor, comprising: an outer ring member having a receiving hole formed in the center and made of a ceramic material; The ring member is detachably disposed in the receiving hole of the outer ring member, wherein the inner ring member is formed with a through hole in the center, and the inner ring member and the outer ring member are made of different materials.

Further, the present invention contemplates an epitaxial reactor comprising the aforementioned central star disk, comprising: a housing; a cover detachably disposed above the housing; a load bearing assembly disposed on In the housing and the cover body, the carrier assembly comprises the foregoing central star disk, a plurality of peripheral cover plates and an upper cover plate; the central star plate is disposed at a central portion of the upper surface of the housing; The cover plate is disposed on the upper surface of the casing, and is arranged around the circumference of the central star plate. Each of the peripheral cover plates and the central star plate surrounds the plurality of accommodating spaces, and at least one wafer carrier is disposed in each accommodating space. The two sides of the upper cover are respectively provided with a holding member and a fixing member, and the holding member is disposed between the upper cover and the lower surface of the cover.

The invention has the advantages that the inner ring member is made of ceramic material, so that the loss caused by the cleaning is minimized, and the inner and outer ring members of the central star disk are separated and designed to be different. The material is used to reduce the loss of materials, thereby reducing the cost of manufacturing. At the same time, the material properties of the ceramics will affect the environment of the process, and thus improve the quality of the epitaxial layer to a certain extent.

The technical means adopted by the present invention for achieving the intended purpose of the invention are further explained below in conjunction with the drawings and the embodiments of the present invention.

Referring to FIG. 1 , the epitaxial reactor of the present invention comprises a housing 10 , a cover 20 and a carrier assembly 30 .

A heat source is disposed in the center of the casing 10. The cover 20 is detachably disposed above the casing 10 to cover the casing 10 when the reaction is performed. The cover 20 is provided with a gas outlet for introducing gas into the casing. 10 in.

The carrier assembly 30 is disposed in the housing 10 and the cover body 20. The carrier assembly 30 includes a central star plate 31, a plurality of peripheral cover plates 32, a plurality of wafer carrier plates 33, and an upper cover plate 34.

Referring to FIG. 1 to FIG. 4, the central astrolabe 31 is disposed at a central portion of the upper surface of the casing 10. The central star plate 31 includes an outer ring member 311 and an inner ring member 312. The outer ring member 311 is centrally formed. There is a receiving hole 311a, and a plurality of radially arranged ribs 311b are formed in a radial direction of the outer ring member 311. The inner ring member 312 is disposed in the receiving hole 311a of the outer ring member 311, and the inner ring member 312 is disposed. A through hole 312a is formed in the center. In an embodiment, the outer ring member 311 and the inner ring member 312 may be the same or different materials, and the outer ring member 311 may be made of a ceramic material such as alumina (Al ₂ O ₃ ) or aluminum nitride (AlN). ), tantalum carbide (SiC), etc., the inner ring member 312 can be made of a quartz material, such as cerium oxide (SiO2)

Referring to FIG. 1 and FIG. 5, the peripheral cover plate 32 is disposed on the upper surface of the casing 10 and is circumferentially arranged around the periphery of the central star plate 31. The peripheral cover plate 32 is made of ceramic material, and each peripheral cover plate is formed. 32 has a radially extending rib 321 , the rib 321 of each peripheral cover 32 is correspondingly connected to one of the ribs 311 b of the outer ring member, the rib 321 of the adjacent peripheral cover 32 and the adjacent rib 311 b of the outer ring 311 An accommodation space 35 is formed. In the preferred embodiment, the peripheral cover 32 is adjacent to but not in contact with the outer ring member 311, so that there is a gap between the rib 321 of the peripheral cover 32 and the adjacent rib 311b of the outer ring member 311.

Referring to FIG. 1 , the wafer carriers 33 are respectively disposed in the corresponding accommodating spaces 35 . Each of the accommodating spaces 35 is arranged with a wafer carrier 33 , and the wafer carrier is arranged according to different wafer sizes. A different number of wafer shallow grooves can be provided on the 33. Referring to FIG. 1, in one embodiment, seven wafer shallow trenches are disposed in each wafer carrier 33. Referring to FIG. 8, in one embodiment, one wafer carrier 33A is provided. Wafer shallow groove. When the epitaxial reaction is performed, the wafer is placed in the shallow groove of the wafer carrier 33 for reaction, and in order to prevent the shallow trench of the wafer from being unplaced from forming, the epitaxial layer is formed during the reaction. A dummy wafer 36 as shown in FIG. 6 can be placed on the idle wafer shallow trench to prevent the epitaxial reaction from being generated on the idle wafer shallow trench, and the spacer 36 can be made of a ceramic material.

As shown in FIG. 1 and FIG. 7 , a holding member 341 and a fixing member 342 are respectively disposed on the two sides of the upper cover 34 to clamp and fix the upper cover 34 to the lower surface of the cover 20 . The member 341 is disposed between the upper cover 34 and the lower surface of the cover 20. The holder 341 and the fixing member 342 may be made of a ceramic material.

Referring to FIG. 9, when the epitaxial reaction is performed, the heat source 40 provides thermal energy corresponding to the lower portion of the outer ring member 31, since the periphery of the heat source 40 is a low temperature region 41 having a lower temperature, and the inner ring is at a lower temperature. The high temperature region 42 is high, so that the central star disk 31 is prevented from being damaged by thermal shock. Therefore, the central star disk 31 is designed to be divided into a ceramic outer ring member 311 and a quartz inner ring member 312. The outer ring member 311 is designed to avoid The high temperature zone 42 and the low temperature zone 41 of the heat source 40 are spanned. Specifically, if the outer diameter of the high temperature region 42 of the heat source 40 is 520 mm and the outer diameter of the low temperature region 41 is 250 mm, the inner ring member 312 has an outer diameter of 259 mm to span the high temperature region 42 and the low temperature region 41.

Further, the outer ring member 311 is made of a ceramic material to be resistant to cleaning to prolong its service life, and the process is improved; and the inner ring member 312 is made of a relatively high temperature resistant thermal shock material (for example, quartz), so that it can be further developed. Reduce replacement costs.

Furthermore, the peripheral cover 32 and the holding member 341 are made of a ceramic material, and the service life can be extended.

The above is only the embodiment of the present invention, and is not intended to limit the scope of the present invention. The present invention has been disclosed by the embodiments, but is not intended to limit the invention, and any one of ordinary skill in the art, In the scope of the technical solutions of the present invention, equivalent modifications may be made to the equivalents of the embodiments of the present invention without departing from the technical scope of the present invention. Any simple modifications, equivalent changes and modifications made to the above embodiments are still within the scope of the technical solutions of the present invention.

10‧‧‧shell
20‧‧‧ cover
30‧‧‧Loading components
31‧‧‧Central Astrolabe
311‧‧‧Outer ring
311a‧‧‧ accommodating holes
311b‧‧‧ Ribs
312‧‧‧ Inner ring
312a‧‧‧through hole
32‧‧‧ peripheral cover
321‧‧‧ Ribs
33, 33A‧‧‧ wafer carrier
34‧‧‧Upper cover
341‧‧‧ holding parts
342‧‧‧Fixed parts
35, 35A‧‧‧ accommodating space
36‧‧ ‧Flap
40‧‧‧heat source
41‧‧‧High temperature zone
42‧‧‧low temperature zone

Figure 1 is a perspective view of the epitaxial reactor of the present invention. Figure 2 is an exploded view of the components of the star disk of the present invention. Figure 3 is a top plan view of the star disk of the present invention. Figure 4 is a side cross-sectional view of the star disk of the present invention. Figure 5 is a perspective view of the peripheral cover of the present invention. Figure 6 is a perspective view of the flap of the present invention. Figure 7 is a perspective view of the holder of the present invention. Figure 8 is a perspective view of another embodiment of the epitaxial reactor of the present invention. Figure 9 is a view showing an implementation state of a heat source of a star disk and an epitaxial reactor of the present invention.

31‧‧‧Central Astrolabe

311‧‧‧Outer ring

311a‧‧‧ accommodating holes

311b‧‧‧ Ribs

312‧‧‧ Inner ring

312a‧‧‧through hole

Claims (10)

A central star disk of an epitaxial reactor comprises: an outer ring member having a receiving hole formed in the center thereof, the outer ring member being made of a ceramic material; and an inner ring member detachably disposed on the outer ring In the accommodating hole of the piece, a through hole is formed in the center of the inner ring member, and the inner ring member and the outer ring member can be made of different materials. The central asteroid of the epitaxial reactor of claim 1, wherein the outer periphery of the outer ring member is radially extended to form the radially arranged ribs. The central asteroid of the epitaxial reactor of claim 1 or 2, wherein the inner ring member is made of a quartz material. An epitaxial reactor includes: a housing; a cover detachably disposed above the housing; a carrier assembly disposed in the housing and the cover, the carrier assembly including a central portion a star disk, a plurality of peripheral cover plates and an upper cover plate; the central star plate is disposed at a central portion of an upper surface of the casing, the central star plate comprising an outer ring member and an inner ring member, the outer ring member being central Forming a receiving hole, the outer ring member is made of a ceramic material, the inner ring member is detachably disposed in the receiving hole of the outer ring member, the inner ring member is formed with a through hole in the center, the inner ring member and the outer ring member The ring member is made of a dissimilar material; the peripheral cover plate is disposed on the upper surface of the casing, and is circumferentially arranged around the periphery of the central star plate, and each peripheral cover plate forms a plurality of accommodations around the central star plate a wafer carrier is disposed in each of the accommodating spaces, and at least one shallow groove is disposed on the wafer carrier; the two sides of the upper cover are respectively provided with a holding member and a fixing member, and the holding member is disposed on the upper surface Between the cover and the lower surface of the cover. The epitaxial reactor according to claim 4, wherein a peripheral edge of the outer ring member of the central star plate is radially extended to form a plurality of radially arranged ribs, each peripheral cover plate having a radially extending rib, each periphery The ribs of the cover plate are correspondingly connected to one of the ribs of the outer ring member, and the accommodating spaces are formed between the ribs of the adjacent peripheral edge cover and the adjacent ribs of the outer ring member. The epitaxial reactor of claim 4 or 5, wherein the inner ring member is made of a quartz material. The epitaxial reactor of claim 4 or 5, further comprising at least one baffle on one of the wafer shallow grooves. The epitaxial reactor of claim 7, wherein the baffle is made of a ceramic material. The epitaxial reactor of claim 4 or 5, wherein the peripheral cover is made of a ceramic material. The epitaxial reactor of claim 4 or 5, wherein the holder and the holder are made of a ceramic material.