TW201526295A - Method for packaging light emitting diode - Google Patents
Method for packaging light emitting diode Download PDFInfo
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- TW201526295A TW201526295A TW103110189A TW103110189A TW201526295A TW 201526295 A TW201526295 A TW 201526295A TW 103110189 A TW103110189 A TW 103110189A TW 103110189 A TW103110189 A TW 103110189A TW 201526295 A TW201526295 A TW 201526295A
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- emitting diode
- light emitting
- film layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
本發明涉及一種半導體發光裝置封裝方法,尤其涉及一種發光二極體封裝方法。The present invention relates to a semiconductor light emitting device packaging method, and more particularly to a light emitting diode packaging method.
相比於習知的發光源,發光二極體(Light Emitting Diode,LED)具有重量輕、體積小、污染低、壽命長等優點,其作為一種新型的發光源,已經被越來越多地應用到各領域當中,如路燈、交通燈、信號燈、射燈及裝飾燈等。Compared with the conventional light source, the Light Emitting Diode (LED) has the advantages of light weight, small volume, low pollution, long life, etc., and as a new type of light source, it has been more and more Applied to various fields, such as street lights, traffic lights, signal lights, spot lights and decorative lights.
習知的發光二極體封裝結構,通常包括具有金屬導電線路以及反射杯結構的引線框架、設置在引線框架的反射杯結構內並電連接至金屬導電線路的發光二極體晶片、以及填充在反射杯結構內並覆蓋發光二極體晶片的封裝體。製作該種發光二極體封裝結構時,通常事先製備導電銅板,然後通過嵌入成型(Insert Molding)工藝注塑聚對苯二醯對苯二胺(PPA)塑膠,使得導電銅板嵌入PPA塑膠而形成具有反射杯結構的引線框架,繼而將發光二極體晶粒置入反射杯結構內並電連接至導電銅板,最後向反射杯結構內填充封裝材料並固化封裝材料形成封裝體。A conventional light emitting diode package structure generally includes a lead frame having a metal conductive line and a reflective cup structure, a light emitting diode chip disposed in the reflective cup structure of the lead frame and electrically connected to the metal conductive line, and a filling A package within the reflective cup structure and covering the light emitting diode chip. When manufacturing the light-emitting diode package structure, a conductive copper plate is usually prepared in advance, and then a poly(p-phenylene terephthalamide) (PPA) plastic is injection-molded by an insert molding process, so that the conductive copper plate is embedded in the PPA plastic to form The lead frame of the reflective cup structure is then placed into the reflective cup structure and electrically connected to the conductive copper plate, and finally the encapsulating material is filled into the reflective cup structure and the encapsulating material is cured to form a package.
該種製造方法中“向反射杯結構內置入發光二極體晶粒”的步驟需要將發光二極體晶粒與導電銅板進行對位,耗費時間而影響生產效率。In the manufacturing method, the step of "embedding the light-emitting diode crystal grains into the reflective cup structure" requires alignment of the light-emitting diode crystal grains with the conductive copper plate, which takes time and affects production efficiency.
有鑒於此,有必要提供一種高效率的發光二極體封裝方法。In view of this, it is necessary to provide a high efficiency LED package method.
一種發光二極體封裝方法,包括步驟:第一步,提供一具有黏性的薄膜層並將多個發光二極體晶粒設置在薄膜層上,各發光二極體晶粒的兩個電極均貼設在薄膜層上;第二步,形成一封裝層在薄膜層上並使封裝層覆蓋所述多個發光二極體晶粒;第三步,在每兩個相鄰的發光二極體晶粒之間切割封裝層以形成切割道,多個切割道貫穿封裝層並止於薄膜層,從而每兩個相鄰的切割道之間形成一個發光二極體單元,每個發光二極體單元包括一個發光二極體晶粒和覆蓋該發光二極體晶粒的封裝層;第四步,移除薄膜層,以獲得多個分離的發光二極體單元。A method for packaging a light-emitting diode, comprising the steps of: providing a viscous film layer and disposing a plurality of light-emitting diode grains on the film layer, and two electrodes of each of the light-emitting diode grains All are disposed on the film layer; in the second step, an encapsulation layer is formed on the film layer and the encapsulation layer covers the plurality of light emitting diode grains; and the third step is in every two adjacent light emitting diodes Cutting the encapsulation layer between the body grains to form a dicing street, the plurality of dicing streets penetrating the encapsulation layer and stopping at the film layer, thereby forming a light-emitting diode unit between each two adjacent dicing streets, each of the light-emitting diodes The body unit includes a light emitting diode die and an encapsulation layer covering the light emitting diode die; and in the fourth step, the thin film layer is removed to obtain a plurality of separate light emitting diode units.
與習知技術相比,上述封裝方法採用薄膜層支撐發光二極體晶粒,然後進行封裝層的設置,無需採用習知技術中的引線框架,能夠避免傳統封裝技術中將發光二極體與引線框架的電路結構進行對位元所產生的時間耗費、還能簡化發光二極體的封裝結構、降低成本。Compared with the prior art, the above packaging method uses a thin film layer to support the light emitting diode die, and then the package layer is disposed, without using the lead frame in the prior art, and the light emitting diode can be avoided in the conventional packaging technology. The circuit structure of the lead frame performs time-consuming processing of the bit, and simplifies the package structure of the light-emitting diode and reduces the cost.
圖1至圖6為本發明實施方式提供的發光二極體封裝方法示意圖。FIG. 1 to FIG. 6 are schematic diagrams of a method for packaging a light emitting diode according to an embodiment of the present invention.
圖7為本發明實施方式提供的發光二極體封裝方法製作出的發光二極體單元結構示意圖。FIG. 7 is a schematic structural diagram of a light emitting diode unit produced by the LED package method according to an embodiment of the present invention.
本發明實施例提供的發光二極體封裝方法包括以下步驟。The LED package method provided by the embodiment of the invention includes the following steps.
第一步,參見圖1及圖2,提供一具有黏性的薄膜層20並將多個發光二極體晶粒12設置在薄膜層20上,各發光二極體晶粒12的兩個電極120、122均貼設在薄膜層20上。In the first step, referring to FIG. 1 and FIG. 2, a viscous film layer 20 is provided and a plurality of light-emitting diode dies 12 are disposed on the film layer 20, and two electrodes of each of the light-emitting diode dies 12 are provided. 120 and 122 are all attached to the film layer 20.
本實施例中,該薄膜層20為UV薄膜或聚醯亞胺(Polyimide)薄膜,所述多個發光二極體晶粒12通過覆晶方式設置在薄膜層20上。In this embodiment, the thin film layer 20 is a UV film or a polyimide film, and the plurality of light emitting diode grains 12 are disposed on the thin film layer 20 by flip chip.
第二步,參見圖3,形成一封裝層11在薄膜層20上並使封裝層11覆蓋所述多個發光二極體晶粒12。In the second step, referring to FIG. 3, an encapsulation layer 11 is formed on the thin film layer 20 and the encapsulation layer 11 covers the plurality of light emitting diode crystal grains 12.
該封裝層11中可混有螢光粉,以在發光二極體晶粒12的光激發下發出與發光二極體晶粒12發光波長不同的光線,從而混光得到預期顏色的光線。本實施例中,可通過塗布(spreading)、印刷(printing)、壓膜(compression molding)或轉模(transfer molding)的方法使封裝層11覆蓋所述第一薄膜層20設有發光二極體晶粒12的表面上。The encapsulating layer 11 may be mixed with phosphor powder to emit light different from the emission wavelength of the LED dipole 12 under the light excitation of the LED dipole 12, thereby mixing light to obtain light of a desired color. In this embodiment, the encapsulation layer 11 may be covered with the first thin film layer 20 by using a method of spreading, printing, compression molding or transfer molding. On the surface of the die 12.
第三步,參見圖4及圖5,在每兩個相鄰的發光二極體晶粒12之間切割封裝層11以形成切割道13,多個切割道13貫穿封裝層11並止於薄膜層20,從而每兩個相鄰的切割道13之間形成一個發光二極體單元10,每個發光二極體單元10包括一個發光二極體晶粒12和覆蓋該發光二極體晶粒12的封裝層11。In the third step, referring to FIG. 4 and FIG. 5, the encapsulation layer 11 is cut between each two adjacent LED dipoles 12 to form a dicing street 13, and the plurality of dicing streets 13 penetrate the encapsulation layer 11 and stop at the film. a layer 20, such that a light-emitting diode unit 10 is formed between each two adjacent dicing streets 13, each of the light-emitting diode units 10 including a light-emitting diode die 12 and covering the light-emitting diode die 12 encapsulation layer 11.
本實施例中,沿著圖4虛線所示的位置對封裝層11進行切除,直至第一薄膜層20的上表面200,從而在上表面200上方形成切割道13而不切到第一薄膜層20,如圖5所示。In the present embodiment, the encapsulation layer 11 is cut away along the position shown by the broken line in FIG. 4 up to the upper surface 200 of the first film layer 20, thereby forming the dicing street 13 above the upper surface 200 without cutting into the first film layer. 20, as shown in Figure 5.
第四步,參見圖6,移除薄膜層20,以獲得多個分離的發光二極體單元10。Fourth, referring to FIG. 6, the thin film layer 20 is removed to obtain a plurality of separate light emitting diode units 10.
當薄膜層20為UV薄膜時,可以先用UV光照射UV薄膜以使其黏性降低,然後將薄膜層20撕除,得到如圖7所示的發光二極體單元10。When the film layer 20 is a UV film, the UV film may be irradiated with UV light to reduce the viscosity, and then the film layer 20 is peeled off to obtain the light-emitting diode unit 10 as shown in FIG.
與習知技術相比,上述封裝方法採用薄膜層20支撐發光二極體晶粒12,然後進行封裝層11的設置,無需採用傳統技術中的引線框架,能夠避免傳統封裝技術中將發光二極體與引線框架的電路結構進行對位元所產生的時間耗費、還能簡化發光二極體的封裝結構、降低成本。Compared with the prior art, the above packaging method uses the thin film layer 20 to support the light emitting diode die 12, and then the package layer 11 is disposed, without using the lead frame in the conventional technology, and can avoid the light emitting diode in the conventional packaging technology. The circuit structure of the body and the lead frame performs time-consuming processing of the bit, and simplifies the package structure of the light-emitting diode and reduces the cost.
可以理解的係,對於本領域的普通技術人員來說,可以根據本發明的技術構思做出其他各種相應的改變與變形,而所有該等改變與變形都應屬於本發明權利要求的保護範圍。It is to be understood that those skilled in the art can make various other changes and modifications in accordance with the technical concept of the present invention, and all such changes and modifications are intended to fall within the scope of the appended claims.
10‧‧‧發光二極體單元10‧‧‧Lighting diode unit
11‧‧‧封裝層11‧‧‧Encapsulation layer
12‧‧‧發光二極體晶粒12‧‧‧Light-emitting diode grains
120、122‧‧‧電極120, 122‧‧‧ electrodes
13‧‧‧切割道13‧‧‧ cutting road
20‧‧‧薄膜層20‧‧‧film layer
200‧‧‧上表面200‧‧‧ upper surface
10‧‧‧發光二極體單元10‧‧‧Lighting diode unit
11‧‧‧封裝層11‧‧‧Encapsulation layer
12‧‧‧發光二極體晶粒12‧‧‧Light-emitting diode grains
120、122‧‧‧電極120, 122‧‧‧ electrodes
13‧‧‧切割道13‧‧‧ cutting road
20‧‧‧薄膜層20‧‧‧film layer
200‧‧‧上表面200‧‧‧ upper surface
10‧‧‧發光二極體單元10‧‧‧Lighting diode unit
無no
10‧‧‧發光二極體單元 10‧‧‧Lighting diode unit
11‧‧‧封裝層 11‧‧‧Encapsulation layer
12‧‧‧發光二極體晶粒 12‧‧‧Light-emitting diode grains
20‧‧‧薄膜層 20‧‧‧film layer
Claims (4)
第一步,提供一具有黏性的薄膜層並將多個發光二極體晶粒設置在薄膜層上,各發光二極體晶粒的兩個電極均貼設在薄膜層上;
第二步,形成一封裝層在薄膜層上並使封裝層覆蓋該多個發光二極體晶粒;
第三步,在每兩個相鄰的發光二極體晶粒之間切割封裝層以形成切割道,多個切割道貫穿封裝層並止於薄膜層,從而每兩個相鄰的切割道之間形成一個發光二極體單元,每個發光二極體單元包括一個發光二極體晶粒和覆蓋該發光二極體晶粒的封裝層;
第四步,移除薄膜層,以獲得多個分離的發光二極體單元。A light emitting diode packaging method includes the following steps:
In the first step, a viscous film layer is provided and a plurality of luminescent diode dies are disposed on the film layer, and two electrodes of each illuminating diode die are attached on the film layer;
In the second step, an encapsulation layer is formed on the thin film layer and the encapsulation layer covers the plurality of light emitting diode crystal grains;
In the third step, the encapsulation layer is cut between each two adjacent LED dies to form a dicing street, and the plurality of dicing streets penetrate the encapsulation layer and stop at the film layer, so that each two adjacent dicing streets Forming a light emitting diode unit, each light emitting diode unit includes a light emitting diode die and an encapsulating layer covering the light emitting diode die;
In the fourth step, the thin film layer is removed to obtain a plurality of separate light emitting diode units.
The method of claim 2, wherein the second step is to cover the film layer with a light-emitting diode by coating, printing, laminating or mold-transforming. On the surface of the grain.
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CN201310747520.4A CN104752583A (en) | 2013-12-31 | 2013-12-31 | Light emitting diode packaging method |
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CN101599442A (en) * | 2008-06-04 | 2009-12-09 | 富准精密工业(深圳)有限公司 | Manufacturing method for LED |
TWI387077B (en) * | 2008-06-12 | 2013-02-21 | Chipmos Technologies Inc | Chip rearrangement package structure and the method thereof |
CN103456846B (en) * | 2012-05-31 | 2016-10-05 | 青岛玉兰祥商务服务有限公司 | Light-emittingdiode encapsulation procedure |
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