CN103456846B - Light-emittingdiode encapsulation procedure - Google Patents
Light-emittingdiode encapsulation procedure Download PDFInfo
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- CN103456846B CN103456846B CN201210176221.5A CN201210176221A CN103456846B CN 103456846 B CN103456846 B CN 103456846B CN 201210176221 A CN201210176221 A CN 201210176221A CN 103456846 B CN103456846 B CN 103456846B
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- light
- crystal grain
- emittingdiode
- support plate
- blue film
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000005538 encapsulation Methods 0.000 title claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 64
- 238000005286 illumination Methods 0.000 claims abstract description 6
- 241000196324 Embryophyta Species 0.000 claims description 12
- 235000012364 Peperomia pellucida Nutrition 0.000 claims description 2
- 240000007711 Peperomia pellucida Species 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 5
- 239000000084 colloidal system Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
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Abstract
A kind of light-emittingdiode encapsulation procedure, it comprises the following steps；First, one support plate is provided, there is on described support plate plurality of circuits structure and reflector is arranged, described circuit structure is positioned at the bottom of described reflector, then, one blue film is provided, on described blue film, a plurality of light-emittingdiode crystal grain is set, described light-emittingdiode crystal grain is positioned at the top of described reflector by described blue film, then, fix described light-emittingdiode crystal grain, described light-emittingdiode crystal grain is made to be fixed on the described circuit structure bottom described reflector with a mould and a vacuum plant, and then, remove described blue film, described blue film is made to depart from described light-emittingdiode crystal grain with illumination methods, finally, form an encapsulated layer and cut described support plate, described encapsulated layer covers described light-emittingdiode crystal grain, form a plurality of encapsulating structure after cleaved described support plate.The present invention fixes described light-emittingdiode crystal grain by vacuum mode, simplifies processing time and improves efficiency.
Description
Technical field
The present invention relates to a kind of light-emittingdiode encapsulation procedure, particularly relate to a kind of pressurization suction with mould vacuum plant and cover the light-emittingdiode encapsulation procedure that mode fixes described light-emittingdiode crystal grain.
Background technology
Light-emittingdiode industry is one of industry of attracting most attention in recent years, is developed so far, light-emittingdiode product has had that energy-conservation, power saving, high efficiency, reaction time is fast, life cycle time length and not mercurous, there is the advantages such as environmental benefit.Encapsulation procedure yet with LED structure can directly influence its serviceability and life-span, therefore in terms of optics control, can improve light extraction efficiency by the setting of reflector and optimize beam distribution.The setting of current light-emittingdiode crystal grain is to use the mode adhered one by one, makes described light-emittingdiode crystal grain position on the position that electrode cable connects, then in the making being completed die bond by the curing process of heating.The position that in processing procedure, light-emittingdiode crystal grain is deposited is different from and predetermined arranges position, need by telecontrol equipment, light-emittingdiode crystal grain to be sent on the position of predetermined set by the position deposited, it is problem place that is time-consuming in processing procedure and that affect efficiency, need persistently to carry out research and improve.
Content of the invention
In view of this, it is necessary to provide one can simplify the die bond time and carry high efficiency light-emittingdiode encapsulation procedure.
A kind of light-emittingdiode encapsulation procedure, it comprises the following steps；
There is provided a support plate, described support plate having plurality of circuits structure and reflector is arranged, described circuit structure is positioned at the bottom of described reflector,
There is provided a blue film, described blue film arranging a plurality of light-emittingdiode crystal grain, described light-emittingdiode crystal grain is positioned at the top of described reflector by described blue film,
Fix described light-emittingdiode crystal grain, make described light-emittingdiode crystal grain be fixed on the described circuit structure bottom described reflector with a mould and a vacuum plant,
Remove described blue film, make described blue film depart from described light-emittingdiode crystal grain with illumination methods, and
Forming an encapsulated layer and cutting described support plate, described encapsulated layer covers described light-emittingdiode crystal grain, forms a plurality of encapsulating structure after cleaved described support plate.
In above-mentioned light-emittingdiode encapsulation procedure, owing to described blue film can paste a plurality of described light-emittingdiode crystal grain simultaneously, and a plurality of described light-emittingdiode crystal grain can be made to be also secured on the position preset by described mould and described vacuum plant, the effectively time on positioning is arranged for the described light-emittingdiode crystal grain of reduction.Arranged by the positioning of a plurality of described light-emittingdiode crystal grain same time, thus the efficiency of described light-emittingdiode encapsulation procedure can more improve.
Brief description
Fig. 1 is the flow chart of steps of light-emittingdiode encapsulation procedure of the present invention.
Fig. 2 is the sectional view that corresponding diagram 1 provides a support plate step.
Fig. 3 is the sectional view that corresponding diagram 1 provides a blue film step.
Fig. 4 is the sectional view that corresponding diagram 1 fixes described light-emittingdiode crystal grain step.
Fig. 5 is the sectional view that corresponding diagram 1 removes described blue film step.
Fig. 6 is that corresponding diagram 1 forms an encapsulated layer and cuts the sectional view of described support plate step.
Main element symbol description
| Encapsulating structure | 10 |
| Support plate | 12 |
| Circuit structure | 14 |
| First electrode | 142 |
| Second electrode | 144 |
| Reflector | 16 |
| Light-emittingdiode crystal grain | 17 |
| Encapsulated layer | 18 |
| Blue film | A |
| Mould | B |
| Upper mold | B1 |
| Lower mold | B2 |
| Board | B22 |
| Vacuum plant | C |
| Pressue device | D |
Following detailed description of the invention will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Detailed description of the invention
Make one below in conjunction with accompanying drawing to the present invention specifically to introduce.
Referring to Fig. 1, showing the flow chart of steps of light-emittingdiode encapsulation procedure of the present invention, it comprises the following steps；
S11 provides a support plate, described support plate has plurality of circuits structure and reflector is arranged, and described circuit structure is positioned at the bottom of described reflector,
S12 provides a blue film, and described blue film arranges a plurality of light-emittingdiode crystal grain, and described light-emittingdiode crystal grain is positioned at the top of described reflector by described blue film,
S13 fixes described light-emittingdiode crystal grain, makes described light-emittingdiode crystal grain be fixed on the described circuit structure bottom described reflector with a mould and a vacuum plant,
S14 removes described blue film, makes described blue film depart from described light-emittingdiode crystal grain with illumination methods, and
S15 forms an encapsulated layer and cuts described support plate, and described encapsulated layer covers described light-emittingdiode crystal grain, forms a plurality of encapsulating structure after cleaved described support plate.
Described step S11 provides a support plate 12, there is on described support plate 12 plurality of circuits structure 14 and reflector 16 is arranged, described circuit structure 14 is positioned at the bottom of described reflector 16, described circuit structure 14 includes that a plurality of first electrode 142 and a plurality of second electrode 144, described first electrode 142 and described second electrode 144 are oppositely arranged (as shown in Figure 2) with man-to-man on described support plate 12.Described first electrode 142 has different polarity from described second electrode 144, and described first electrode 142 is N-type electrode, and described second electrode 144 is P-type electrode.It on described first electrode 142 being oppositely arranged and described second electrode 144, is respectively provided with and there is described reflector 16.Described reflector 16 is the cup type for depression, and the cave in bottom of cup type of described reflector 16 is on the described circuit structure 14 of described support plate 12, and the cave in top of cup type of described reflector 16 upwardly extends the top being positioned at described circuit structure 14 from described support plate 12.
Described step S12 provides a blue film A, on described blue film A, a plurality of light-emittingdiode crystal grain 17 is set, described light-emittingdiode crystal grain 17 is positioned at the top of described reflector 16 by described blue film A, described blue film A is the film layer that surface has high viscosity, and described light-emittingdiode crystal grain 17 is adhered to the surface of described blue film A and is arranged on precalculated position.The precalculated position of described light-emittingdiode crystal grain 17 is the spacing that the spacing between described light-emittingdiode crystal grain 17 is equal between described reflector 16 internal described first electrode 142 and the described second relative position of electrode 144.Described blue film A is arranged at the top of described reflector 16, and makes the position that described light-emittingdiode crystal grain 17 on a predetermined position is relative with described second electrode 144 relative to described first electrode 142.As it is shown on figure 3, each the described light-emittingdiode crystal grain 17 on described blue film A is all facing to the position that described first electrode 142 in a described reflector 16 is relative with described second electrode 144.It is to say, described first electrode 142 is all relatively set with a described light-emittingdiode crystal grain 17 with the top of the described second relative position of electrode 144 in each described reflector 16.
Described step S13 fixes described light-emittingdiode crystal grain 17, described light-emittingdiode crystal grain 17 is made to be fixed on the described circuit structure 14 bottom described reflector 16 with an a mould B and vacuum plant C, described mould B includes upper mold B1 and lower mold B2, is combined to form confined space and in order to arrange described support plate 12 and described blue film A between described upper mold B1 and described lower mold B2.Board B22 bottom described lower mold B2 is for breathable plate body, mutually can circulate through described board B22 in order to the air making described mould B inside and outside.Described vacuum plant C is arranged at the outboard end of described board B22, in order to be drawn the air in described mould B by described board B22.When described support plate 12 and described blue film A are arranged according to described step S12, when in making each described reflector 16, described first electrode 142 is all relatively set with a described light-emittingdiode crystal grain 17 with the top of the described second relative position of electrode 144 and is placed on described board B22, after the air that described vacuum plant C draws in described mould B, owing to described blue film A has good ductility, described blue film A will be covered on the surface of described support plate 12 and described reflector 16 closely.Described light-emittingdiode crystal grain 17 is closely pasted running by described blue film A, thus described light-emittingdiode crystal grain 17 will be fitted in described first electrode 142 and described second electrode 144 relative position (as shown in Figure 4).Described light-emittingdiode crystal grain 17 is fitted in described first electrode 142 and the described second relative position of electrode 144, will reach electric connection with described first electrode 142 and described second electrode 144 respectively.Described fixing described light-emittingdiode crystal grain 17 step farther includes pressurization steps, described pressurization steps is to apply high pressure with pressue device D to described blue film A in upper mold B1 of described mould B, described blue film A, by more rapid and closely paste again, makes described light-emittingdiode crystal grain 17 faster and more securely be fitted in described first electrode 142 and described second electrode 144 relative position.By above-mentioned vacuum plant C and the described pressue device D running to described blue film A simultaneously, a plurality of described light-emittingdiode crystal grain 17 on described blue film A can be made to fix on a predetermined position rapidly in the same time, compared to the die bond running bonding one by one at present, substantially can effectively reduce the time of die bond, thus improve the efficiency of light-emittingdiode encapsulation procedure.Described light-emittingdiode crystal grain 17 is fitted in described first electrode 142 and the described second relative position of electrode 144, to be electrically connected with described first electrode 142 and described second electrode 144 respectively, reach the electrical connection of described light-emittingdiode crystal grain 17 and described circuit structure 14.
Described step S14 removes described blue film A, described blue film A is made to depart from described light-emittingdiode crystal grain 17 with illumination methods, after described light-emittingdiode crystal grain 17 completes to electrically connect with described circuit structure 14, first described mould B is removed and carry out removing of described blue film A again.It is with colloid bonding between described blue film A and described light-emittingdiode crystal grain 17, therefore just described blue film A can be removed to reduce the means of described blue film A colloid viscosity or mode.Present embodiment uses illumination methods to reduce the colloid viscosity of described blue film A, a ultraviolet source (not indicating in figure) is utilized to carry out irradiating described blue film A, just can reduce the colloid viscosity of described blue film A, make described blue film A can remove on described reflector 16 from the described support plate 12 being close to, and depart from described light-emittingdiode crystal grain 17 (as shown in Figure 5).
Described step S15 forms an encapsulated layer 18 and cuts described support plate 12, and described encapsulated layer 18 covers described light-emittingdiode crystal grain 17, forms a plurality of encapsulating structure 10 after cleaved described support plate 12.Described encapsulated layer 18 is formed in described reflector 16, covers the described light-emittingdiode crystal grain 17 electrically connecting bottom described reflector 16 with described circuit structure 14.Described encapsulated layer 18 is completely covered described light-emittingdiode crystal grain 17, and cover height reaches the top (as shown in Figure 6) of described reflector 16.Including at least one fluorescence coating (not indicating in figure) in described encapsulated layer 18, it is more uniform that described fluorescence coating can make described encapsulating structure 10 go out light color.Described encapsulating structure 10 is that the described support plate 12 of cutting is formed, and the cutting of described support plate 12 is to carry out along the described support plate 12 between adjacent described reflector 16.As shown in phantom in Figure 6, along the described support plate 12 of periphery cutting of described reflector 16 between adjacent described reflector 16, so that it may be directly partitioned into a plurality of encapsulating structure 10.
To sum up, light-emittingdiode encapsulation procedure of the present invention, a plurality of described light-emittingdiode crystal grain 17 are arranged on predetermined position with described blue film A, recycle described mould B and described vacuum plant C can the more same time directly fit and be fixed on described circuit structure 14, and reach electric connection with described circuit structure 14 simultaneously, when having reduction die bond, the usefulness of packaging efficiency is accelerated, effectively promoted to chien shih processing procedure speed.
In addition, those skilled in the art also can do other changes, certainly, these changes done according to present invention spirit in present invention spirit, all should be included within scope of the present invention.
Claims (3)
1. a light-emittingdiode encapsulation procedure, it comprises the following steps:
One support plate is provided, described support plate has plurality of circuits structure and reflector is arranged, described electricity
Line structure is positioned at the bottom of described reflector,
One blue film is provided, described blue film arranges a plurality of light-emittingdiode crystal grain, described light-emittingdiode
Crystal grain is positioned at the top of described reflector by described blue film,
Fix described light-emittingdiode crystal grain, make described light-emitting diodes with a mould and a vacuum plant
Body crystal grain is fixed on the described circuit structure bottom described reflector,
Remove described blue film, make described blue film depart from described light-emittingdiode crystal grain with illumination methods, and
Forming an encapsulated layer and cutting described support plate, described encapsulated layer covers described light-emittingdiode crystal grain,
Form a plurality of encapsulating structure after cleaved described support plate, in described fixing described light-emittingdiode crystal grain step,
Described mould includes a upper mold and a lower mold, is combined to form airtight between described upper mold and described lower mold
Space in order to arrange described support plate and described blue film, the board bottom described lower mold is for ventilative plate body,
Described vacuum plant is arranged at the outboard end of described board, draws the air in described mould by described board.
2. light-emittingdiode encapsulation procedure as claimed in claim 1, it is characterised in that: one support plate of described offer
In step, described circuit structure includes a plurality of first electrode and a plurality of second electrode, described first electricity
Pole and described second electrode are oppositely arranged with man-to-man on described support plate.
3. light-emittingdiode encapsulation procedure as claimed in claim 2, it is characterised in that: described first electrode and institute
Stating the second electrode and having different polarity, described first electrode is N-type electrode, and described second electrode is p-type
Electrode.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210176221.5A CN103456846B (en) | 2012-05-31 | 2012-05-31 | Light-emittingdiode encapsulation procedure |
| TW101121529A TW201349583A (en) | 2012-05-31 | 2012-06-15 | Method for manufacturing light emitting diode package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210176221.5A CN103456846B (en) | 2012-05-31 | 2012-05-31 | Light-emittingdiode encapsulation procedure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103456846A CN103456846A (en) | 2013-12-18 |
| CN103456846B true CN103456846B (en) | 2016-10-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210176221.5A Withdrawn - After Issue CN103456846B (en) | 2012-05-31 | 2012-05-31 | Light-emittingdiode encapsulation procedure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103456846B (en) |
| TW (1) | TW201349583A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103682045B (en) * | 2013-12-04 | 2016-09-14 | 北京国联万众半导体科技有限公司 | The processing method of a kind of LED encapsulation cup and corresponding mould |
| CN104752583A (en) * | 2013-12-31 | 2015-07-01 | 展晶科技(深圳)有限公司 | Light emitting diode packaging method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201205885A (en) * | 2010-07-29 | 2012-02-01 | Advanced Optoelectronic Tech | Method of packaging light emitting element |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003243720A (en) * | 2002-02-14 | 2003-08-29 | Citizen Electronics Co Ltd | Method of manufacturing light emitting diode |
| KR100927120B1 (en) * | 2007-10-29 | 2009-11-18 | 옵토팩 주식회사 | Semiconductor device packaging method |
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2012
- 2012-05-31 CN CN201210176221.5A patent/CN103456846B/en not_active Withdrawn - After Issue
- 2012-06-15 TW TW101121529A patent/TW201349583A/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201205885A (en) * | 2010-07-29 | 2012-02-01 | Advanced Optoelectronic Tech | Method of packaging light emitting element |
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| Publication number | Publication date |
|---|---|
| CN103456846A (en) | 2013-12-18 |
| TW201349583A (en) | 2013-12-01 |
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Effective date of registration: 20160706 Address after: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Applicant after: SCIENBIZIP CONSULTING (SHEN ZHEN) Co.,Ltd. Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Street tabulaeformis Industrial Zone tenth east two Ring Road No. two Applicant before: ZHANJING Technology (Shenzhen) Co.,Ltd. Applicant before: Advanced Optoelectronic Technology Inc. Effective date of registration: 20160706 Address after: 518000 Guangdong Province, Shenzhen New District of Longhua City, Dalang street, Hua Sheng Lu Yong Jingxuan commercial building 1608 Applicant after: Jinyang Shenzhen sea Network Intelligent Technology Co.,Ltd. Address before: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Applicant before: SCIENBIZIP CONSULTING (SHEN ZHEN) Co.,Ltd. |
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Inventor after: Li Weicong Inventor after: Li Wei Inventor before: Luo Xingfen |
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Effective date of registration: 20170503 Address after: 518000, Shenzhen, Guangdong, Nanshan District province Taoyuan street, Tian Lao industrial area A Tian Lao building 1115 Patentee after: VANGUARD SEMICONDUCTOR CO.,LTD. Address before: 266000 Licang, Qingdao, No. nine East water road, No. 320, No. Patentee before: QINGDAO YULANXIANG BUSINESS SERVICE Co.,Ltd. |
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Address after: 518000 1301, building 3, Chongwen Park, Nanshan Zhiyuan, No. 3370 Liuxian Avenue, Fuguang community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong Patentee after: Shenzhen Weizhao Semiconductor Co.,Ltd. Address before: 518000 1115 Tianliao building, Tianliao Industrial Zone A, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: VANGUARD SEMICONDUCTOR CO.,LTD. |
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