TW201525099A - Adhesive film for semiconductor bonding - Google Patents

Abstract

The purpose of the present invention is to provide an adhesive film for semiconductor bonding which, when laminated to a wafer surface and diced along a scribe line (dicing line), is less apt to peel off at the interface between the adhesive film and the wafer, in particular, at the interface between the adhesive film and the wafer having an aluminum wiring pattern present on the scribe line. This adhesive film for semiconductor bonding is to be laminated to a wafer having an aluminum wiring pattern formed thereon and has the following feature (1) and/or (2). (1) The adhesive film has a storage modulus of 7.5 GPa or less at a frequency corresponding to the rotation speed of the dicing blade; and (2) the surface of the adhesive film which is to be laminated to the wafer having an aluminum wiring pattern formed thereon has a surface free energy [gamma] when examined using two or more analysis reagents each having a known surface energy, the surface free energy [gamma] including a dispersion component ([gamma]sd) of 30 mJ/m2 or greater.

Description

Adhesive film for semiconductor bonding

The present invention relates to a crystal which is difficult to form an aluminum wiring pattern on an interface with a wafer, particularly a scribe line, when being cut along a scribe line (cut line) in a state of being attached to a surface of a wafer. It is difficult to cause peeling of the adhesive film for semiconductor bonding at the round interface.

In recent years, in order to cope with the miniaturization and high integration of semiconductor devices which are gradually being developed, attention has been paid to flip chip mounting using a semiconductor wafer having bump electrodes (bumps) made of solder or the like.

In flip chip mounting, a method of bonding a bump electrode of a semiconductor wafer to an electrode of another semiconductor wafer or a substrate, and then injecting an underfill to perform resin sealing is generally used (for example, Patent Document 1).

However, in recent years, as the miniaturization of semiconductor wafers has progressed, the distance between electrodes has been gradually narrowed, and the gap between semiconductor wafers or semiconductor wafers and substrates has been narrowed along with such cases, so that when the primer is injected, Entrained air becomes easy to create voids. Therefore, after the electrode bonding, the thermosetting type bonding film is attached to the substrate or the semiconductor wafer in advance, and the electrode bonding and the bonding film hardening are simultaneously performed by heating (for example, Patent Document 2) ).

As a method of attaching a bonding film to a semiconductor wafer in advance, a method of bonding a bonding film to the surface of the bonding wafer and cutting the surface of the bonding film along a scribe line (cutting line) can be used. Cutting, thereby obtaining a semiconductor wafer to which an adhesive film is attached. FIG. 1 is a plan view schematically showing a region of a wafer surface on which a scribe line is formed. As shown in FIG. 1, on the wafer 1, the scribe line 2 is formed in a lattice shape, and the semiconductor wafer 3 is obtained by dicing along the scribe line 2. On the semiconductor wafer 3, a plurality of bump electrodes 4 are provided.

However, in the case where the blade is cut from the surface of the bonding film, there is a case where peeling occurs at the interface between the bonding film and the germanium wafer.

In particular, as shown in FIG. 1, when a metal wiring pattern 5 called an auxiliary member is used as an alignment mark on the scribe line 2, it is particularly easy to cause peeling from the adhesive film interface at the portion. There is a problem that the joint reliability due to peeling is lowered or the cut scrap is mixed in the peeled portion. Further, when aluminum is present on the outermost surface of the metal wiring pattern 5, aluminum tends to form an oxide film on the surface, and the adhesion of the aluminum oxide is inferior, so that there is a problem that peeling occurs at the interface between the aluminum wiring pattern and the adhesive film.

Patent Document 1: Japanese Laid-Open Patent Publication No. 2010-278334

Patent Document 2: Japanese Laid-Open Patent Publication No. 2011-29392

It is an object of the present invention to provide an interface which is difficult to interface with a wafer, particularly a wafer having an aluminum wiring pattern on a scribe line, when dicing along a scribe line (cut line) in a state of being bonded to the surface of the wafer. It is difficult to cause peeling of the adhesive film for semiconductor bonding.

The present invention relates to a film for bonding a semiconductor, which is attached to a wafer having an aluminum wiring pattern, and (1) has a storage elastic modulus of 7.5 GPa or less at a frequency corresponding to the number of revolutions of the dicing blade. And/or (2) using two or more types of surface energy to measure the known measurement reagent, and the obtained dispersion component (γsd) of the surface free energy γ of the surface of the wafer to which the aluminum wiring pattern is attached is 30 mJ. /m ² or more.

Hereinafter, the present invention will be described in detail.

The inventors of the present invention have found that the (1) of the bonding film for semiconductor bonding bonded to the wafer with the aluminum wiring pattern is stored at a frequency corresponding to the number of revolutions of the dicing blade. The elastic modulus, and/or (2) the dispersion component (γsd) in the surface free energy γ is adjusted to a specific range, whereby the interface for the semiconductor bonding can be suppressed from interfacing with the wafer, particularly suppressing the presence of aluminum on the scribe line. The interface of the wafer of the wiring pattern is peeled off.

The adhesive film for semiconductor bonding of the present invention is bonded to a wafer having an aluminum wiring pattern.

The wafer to which the aluminum wiring pattern is attached is not particularly limited, and examples thereof include a wafer made of a semiconductor such as germanium or gallium arsenide, and a scribe line formed in a lattice shape, and an aluminum wiring pattern is formed on the scribe line. A semiconductor wafer can be obtained by cutting the wafer along the scribe line. Preferably, the obtained semiconductor wafer is provided with a plurality of bump electrodes composed of solder or the like.

In the adhesive film for semiconductor bonding of the present invention, (1) the storage elastic modulus at a frequency corresponding to the number of revolutions of the dicing blade is 7.5 GPa or less, and/or (2) the use of two or more kinds of surface energy is known. The reagent was measured, and the obtained dispersion component (γsd) in the surface free energy γ of the surface of the wafer to which the aluminum wiring pattern was attached was 30 mJ/m ² or more.

By adjusting the storage elastic modulus of the above (1) at a frequency corresponding to the number of revolutions of the dicing blade, and/or the dispersion component (γsd) of the surface free energy γ of the above (2) to the above range, It is possible to suppress peeling of the interface film for semiconductor bonding at the interface with the wafer, particularly to suppress the interface with the wafer having the aluminum wiring pattern on the scribe line. The adhesive film for semiconductor bonding of the present invention satisfies both of the above (1) and (2), and may satisfy only one of them.

When the storage elastic modulus of the above (1) at a frequency corresponding to the number of revolutions of the dicing blade exceeds 7.5 GPa, the adhesive film for semiconductor bonding becomes easy to have aluminum wiring at the interface with the wafer, particularly with respect to the scribe line. The interface of the patterned wafer is peeled off. The storage elastic modulus is preferably 7.4 GPa or less, more preferably 7.3 GPa or less.

The lower limit of the storage elastic modulus is not particularly limited, but it is considered to be applied to the surface of the wafer. In the case where the semiconductor wafer for semiconductor bonding is diced or the semiconductor wafer to which the semiconductor bonding bonding film is attached is thermally bonded to the substrate or the like, the lower limit is preferably 3.5 GPa, and more preferably 4.0 GPa. If the storage elastic modulus is less than 3.5 GPa, the machinability at the time of cutting may be lowered.

The storage elastic modulus at the frequency corresponding to the number of revolutions of the dicing blade of the above (1) can be estimated by using a dynamic viscoelasticity measuring apparatus (for example, DVA-200 manufactured by IT Measurement and Control Co., Ltd.). The frequency dispersion measurement is performed to prepare a main curve under water temperature at the time of cutting (for example, about 5 to 50 ° C), and the storage elastic modulus at a specific frequency is read on the main curve.

Furthermore, in the measurement of viscoelasticity, there is usually a fixed relationship between frequency and temperature (temperature-time conversion algorithm). Therefore, for example, the change in temperature can be converted into a change in frequency, and the viscoelastic property at a fixed temperature can be investigated. Frequency dependence. According to this method, the viscoelastic property in a wide frequency region which cannot be measured can be predicted as a characteristic at an arbitrary temperature.

The frequency corresponding to the number of revolutions of the dicing blade is a frequency corresponding to the normal number of revolutions (in rpm) of the dicing blade when the blade is diced in a state in which the semiconductor bonding bonding film is bonded to the wafer surface ( The unit is Hz), usually 10000~60000rpm (converted to frequency 167~1000Hz), preferably 20,000~50000rpm (converted to frequency 333~833Hz).

When the dispersion component (γsd) in the surface free energy γ of the above (2) is less than 30 mJ/m ² , the film for semiconductor bonding becomes easy to have an aluminum wiring pattern on the interface with the wafer, particularly on the scribe line. The interface of the wafer is peeled off. The dispersion component (γsd) is preferably 32 mJ/m ² or more, and more preferably 35 mJ/m ² or more.

The upper limit of the dispersion component (γsd) is not particularly limited. However, it is considered that the semiconductor wafer to which the semiconductor bonding bonding film is bonded is bonded to the surface of the wafer, or the semiconductor wafer to which the semiconductor bonding bonding film is attached is thermally bonded thereto. In the case of a substrate or the like, the upper limit is preferably 55 mJ/m ² , and the upper limit is more preferably 50 mJ/m ² .

Further, the polar component (γsp) in the surface free energy γ is not particularly limited, but a preferred lower limit is 0.01 mJ/m ² , and a preferred upper limit is 5 mJ/m ² . When the polar component (γsp) is less than 0.01 mJ/m ² or more than 5 mJ/m ² , the difference in polarity between the semiconductor-bonding adhesive film and aluminum becomes large, and the film for semiconductor bonding becomes easy to crystallize. The interface between the circles, in particular, the interface with the wafer on which the aluminum wiring pattern is present on the scribe line is peeled off. A more preferred lower limit of the above polar component (γsp) is 0.02 mJ/m ² , and a more preferred upper limit is 4 mJ/m ² .

Further, the surface free energy γ can be obtained by the sum of the dispersion component (γsd) and the polar component (γsp). The surface free energy γ is not particularly limited, but a preferred lower limit is 30 mJ/m ² , and a preferred upper limit is 55 mJ/m ² . When the surface free energy γ is less than 30 mJ/m ² , the semiconductor bonding adhesive film may be easily peeled off at the interface with the wafer, particularly at the interface of the wafer having the aluminum wiring pattern on the scribe line. A lower limit of the above surface free energy γ is preferably 35 mJ/m ² , and a more preferred upper limit is 50 mJ/m ² .

The surface free energy γ and the dispersion component (γsd) and the polar component (γsp) in the surface free energy γ are measured by using a contact angle meter to measure the adhesion of two or more kinds of measurement reagents to the semiconductor bonding adhesive film. The contact angle of the surface (solid surface) of the wafer of the aluminum wiring pattern was calculated using a geometrical average method based on the obtained contact angle.

The above two or more kinds of measurement reagents are not particularly limited as long as the surface energy is known, and examples thereof include water, diiodomethane, bromine naphthalene, and ethylene glycol. For example, when water and diiodoethane are used as the measuring reagent, the surface free energy and the dispersed component (γsd) and the polar component (γsp) in the surface free energy γ can be based on the following formula (1)~ (3) and calculate.

γ=γsd+γsp (1)

72.8(1+cosθ _H )=2(21.8×γsd) ^1/2 +2(51.0×γsp) ^1/2 (2)

50.8(1+cosθ _I )=2(48.5×γsd) ^1/2 +2(2.3×γsp) ^1/2 (3)

θ _H = contact angle of water relative to the solid surface

θ _I = contact angle of diiodomethane relative to the solid surface

In order to adjust the storage elastic modulus of the above (1) at a frequency corresponding to the number of revolutions of the dicing blade, and/or the dispersion component (γsd) in the surface free energy γ of the above (2) to the above range, the present invention The adhesive film for semiconductor bonding preferably contains a thermosetting resin, a heat curing agent, and a high molecular weight compound, and may contain an inorganic filler or an additive as needed. Preferably, the content of the liquid component at normal temperature (25 ° C) and the high molecular weight compound having a glass transition temperature (Tg) of 0 ° C or less are preferably 5 to 15% by weight or 20 to 60% by weight. % of an inorganic filler which has been surface treated by a decane coupling agent.

Further, the component which is liquid at normal temperature (25 ° C) may be a thermosetting resin, a thermosetting agent, a high molecular weight compound, or may be a component other than the above (for example, a diluent, a coupling agent, and adhesion). Additives such as agents, etc.).

The thermosetting resin is not particularly limited, and examples thereof include a compound which is cured by a reaction such as addition polymerization, polycondensation, polyaddition, addition condensation, or ring-opening polymerization. Specifically, examples of the thermosetting resin include a urea resin, a melamine resin, a phenol resin, a resorcin resin, an epoxy resin, an acrylic resin, a polyester resin, a polyamide resin, and a polybenzimidazole resin. , diallyl phthalate resin, xylene resin, alkyl-benzene resin, epoxy acrylate resin, oxime resin, urethane resin, and the like. Among these, from the viewpoint of securing the strength and bonding reliability of the cured product of the semiconductor bonding underlayer film, an epoxy resin or an acrylic resin is preferable.

The epoxy resin is not particularly limited, and examples thereof include a bisphenol type epoxy resin such as a bisphenol A type, a bisphenol F type, a bisphenol AD type, and a bisphenol S type, a phenol novolac type, and a cresol novolak type. Aromatic epoxy resin such as novolak type epoxy resin, resorcinol type epoxy resin, trisphenol methane triepoxypropyl ether, naphthalene type epoxy resin, fluorene type epoxy resin, dicyclopentadiene type Epoxy resin, polyether modified epoxy resin, NBR modified epoxy resin, CTBN modified epoxy Resins, and such hydrides. These epoxy resins may be used singly or in combination of two or more.

The epoxy resin may be an epoxy resin which is liquid at normal temperature and an epoxy resin which is solid at normal temperature, and these may be used in combination as appropriate.

In the epoxy resin which is liquid at the normal temperature, a bisphenol A type ring such as EPICLON 840, 840-S, 850, 850-S, EXA-850CRP (manufactured by DIC Corporation) may be mentioned as a commercial item. Naphthalene type epoxy resin such as bisphenol F type epoxy resin such as oxygen resin, EPICLON 830, 830-S, EXA-830CRP (manufactured by DIC Corporation), EPICLON HP-4032, HP-4032D (manufactured by DIC Corporation) Hydrogenated bisphenol A epoxy resin such as EPICLON EXA-7015 (manufactured by DIC Corporation) and EX-252 (manufactured by Changchun Chemical Co., Ltd.), and resorcinol epoxy resin such as EX-201 (manufactured by Changchun Chemical Co., Ltd.) Wait.

In the above-mentioned epoxy resin which is a solid at a normal temperature, a bisphenol A type epoxy resin such as EPICLON 860, 10550, 1055 (manufactured by DIC Corporation) or EPICLON EXA-1514 (manufactured by DIC Corporation) is mentioned as a commercial item. ) such as bisphenol S-type epoxy resin, EPICLON HP-4700, HP-4710, HP-4770 (manufactured by DIC Corporation), etc., such as naphthalene epoxy resin, EPICLON HP-7200 series (manufactured by DIC), etc. A cresol novolac type epoxy resin such as a diene type epoxy resin, an EPICLON HP-5000, or an EXA-9900 (manufactured by DIC Corporation).

The above-mentioned thermosetting agent is not particularly limited, and a conventionally known thermosetting agent can be appropriately selected in combination with the above thermosetting resin. In the case of using the epoxy resin as the thermosetting resin, examples of the thermosetting agent include an acid anhydride curing agent, a phenol curing agent, an amine curing agent, a latent curing agent such as dicyandiamide, and a cationic system. Catalyst type hardener, etc. These thermosetting agents may be used singly or in combination of two or more. Among these, an acid anhydride-based curing agent is preferred in terms of excellent curing speed and physical properties of the cured product.

In the above-mentioned acid anhydride-based curing agent, for example, YH-306, YH-307 (the above is manufactured by Mitsubishi Chemical Corporation, liquid at normal temperature (25 ° C)), and YH-309 (manufactured by Mitsubishi Chemical Corporation, It is a solid at room temperature (25 ° C) and the like.

The content of the above-mentioned thermosetting agent is not particularly limited. When an epoxy resin is used as the thermosetting resin and a thermosetting agent which reacts in an equal amount with an epoxy group is used, the content of the above-mentioned thermosetting agent is relative to the semiconductor. A preferred lower limit of the total amount of the epoxy groups contained in the bonding film for bonding is 60 equivalents, and a preferred upper limit is 110 equivalents. When the content is less than 60 equivalents, the film for semiconductor bonding may not be sufficiently cured. Even if the content exceeds 110 equivalents, it does not particularly contribute to the curability of the adhesive film for semiconductor bonding, and may cause voids due to excessive evaporation of the thermal curing agent. A lower limit of the content is preferably 70 equivalents, and a more preferred upper limit is 100 equivalents.

The adhesive film for semiconductor bonding of the present invention can further contain a curing accelerator for the purpose of adjusting the curing rate, the physical properties of the cured product, and the like.

The hardening accelerator is not particularly limited, and examples thereof include an imidazole-based hardening accelerator and a tertiary amine-based curing accelerator. Among them, an imidazole-based hardening accelerator is preferred in terms of easy control of the reaction system for adjusting the curing rate and the physical properties of the cured product.

The imidazole-based hardening accelerator is not particularly limited, and examples thereof include Fujicure 7000 (manufactured by T&K TOKA Co., Ltd., liquid at room temperature (25 ° C)), and 1-cyanoethyl-2 which protects the imidazole by cyanoethyl group. -Phenyl imidazole, an imidazole-based hardening accelerator which protects alkaline with iso-cyanuric acid (trade name "2MA-OK", manufactured by Shikoku Kasei Kogyo Co., Ltd., solid at room temperature (25 ° C)), 2MZ, 2MZ- P, 2PZ, 2PZ-PW, 2P4MZ, C11Z-CNS, 2PZ-CNS, 2PZCNS-PW, 2MZ-A, 2MZA-PW, C11Z-A, 2E4MZ-A, 2MAOK-PW, 2PZ-OK, 2MZ-OK, 2PHZ, 2PHZ-PW, 2P4MHZ, 2P4MHZ-PW, 2E4MZ-BIS, VT, VT-OK, MAVT, MAVT-OK (above, manufactured by Shikoku Chemical Industry Co., Ltd.). These imidazole-based hardening accelerators may be used singly or in combination of two or more.

The content of the above-mentioned hardening accelerator is not particularly limited, and a preferred lower limit of the thermal curing agent per 100 parts by weight is 2 parts by weight, and a preferred upper limit is 50 parts by weight. If the content is less than 2 parts by weight, there is a need for heating at a high temperature for a long time in order to thermally harden the film for semiconductor bonding. The situation. When the content is more than 50 parts by weight, the storage stability of the film for semiconductor bonding is insufficient, or the excessive curing accelerator volatilizes to cause voids. A more preferred lower limit of the content is 3 parts by weight, and a still more preferred upper limit is 30 parts by weight.

The high molecular weight compound is not particularly limited, and examples thereof include a urea resin, a melamine resin, a phenol resin, a resorcin resin, an epoxy resin, an acrylic resin, a polyester resin, a polyamide resin, and a polybenzimidazole resin. A known high molecular weight compound such as diallyl phthalate resin, xylene resin, alkyl-benzene resin, epoxy acrylate resin, oxime resin or amine ester resin. Among them, a high molecular weight compound having an epoxy group is preferred.

By adding the above-mentioned high molecular weight compound having an epoxy group, the cured product of the adhesive film for semiconductor bonding can exhibit excellent flexibility. In other words, the cured product of the adhesive film for semiconductor bonding has excellent mechanical strength, heat resistance and moisture resistance derived from the epoxy resin as the thermosetting resin, and is excellent in the high molecular weight compound derived from the above epoxy group. Since it is flexible, it is excellent in cold cycle resistance, reflow resistance, dimensional stability, etc., and exhibits high joint reliability and high conduction reliability.

The high molecular weight compound having an epoxy group is not particularly limited as long as it is a high molecular weight compound having an epoxy group at the terminal and/or side chain (lateral position), and examples thereof include an epoxy group-containing acrylic rubber and a ring-containing compound. Oxygen butadiene rubber, bisphenol type high molecular weight epoxy resin, epoxy group-containing phenoxy resin, epoxy group-containing acrylic resin, epoxy group-containing amine ester resin, epoxy group-containing poly Ester resin and the like. Among them, a high molecular weight compound containing a large amount of an epoxy group can be obtained, and an epoxy group-containing acrylic resin is preferable because the mechanical strength and heat resistance of the cured product are more excellent. These high molecular weight compounds having an epoxy group may be used singly or in combination of two or more.

When the above-mentioned high molecular weight compound having an epoxy group, particularly an epoxy group-containing acrylic resin, is used as the above high molecular weight compound, the preferred lower limit of the weight average molecular weight of the above epoxy group-containing high molecular weight compound is 1 Ten thousand, the upper limit is 1 million. When the weight average molecular weight is less than 10,000, the film forming property of the film for semiconductor bonding is insufficient, and the flexibility of the cured product of the film for bonding semiconductor is not sufficiently improved. When the weight average molecular weight exceeds 1,000,000, the solubility of a high molecular weight compound in a solvent may fall and workability may fall.

In the case of using the above-mentioned high molecular weight compound having an epoxy group, particularly an epoxy group-containing acrylic resin as the above high molecular weight compound, the preferred lower limit of the epoxy equivalent of the above epoxy group-containing high molecular weight compound is 200. The upper limit is preferably 1000. When the epoxy equivalent is less than 200, the flexibility of the cured product of the semiconductor bonding adhesive film may not be sufficiently improved. When the epoxy equivalent is more than 1,000, the mechanical strength or heat resistance of the cured product of the semiconductor bonding adhesive film may be insufficient.

The content of the high molecular weight compound in the adhesive film for semiconductor bonding of the present invention is not particularly limited, and a preferred lower limit of the adhesive film for semiconductor bonding of the present invention is 3% by weight, and a preferred upper limit is 30% by weight. If the content is less than 3% by weight, sufficient reliability against thermal strain cannot be obtained. When the content is more than 30% by weight, the heat resistance of the film for semiconductor bonding may be lowered.

The adhesive film for semiconductor bonding of the present invention may further contain an inorganic filler. In the case of containing an inorganic filler, it is preferred to contain 20 to 60% by weight of an inorganic filler which has been surface-treated by a decane coupling agent. When the content is more than 60% by weight, the film forming property of the film for semiconductor bonding is insufficient, the storage elastic modulus at a frequency corresponding to the number of revolutions of the dicing blade is increased, or the film is easily peeled off at the time of cutting. The situation. The lower limit of the content of the inorganic filler in the adhesive film for semiconductor bonding of the present invention is not particularly limited. However, from the viewpoint of securing the strength and bonding reliability of the cured product of the semiconductor bonding adhesive film, the lower limit is preferably 20% by weight. %.

The inorganic filler is not particularly limited, and examples thereof include silica, alumina, aluminum nitride, boron nitride, tantalum nitride, niobium carbide, magnesium oxide, and zinc oxide. Among them, in terms of excellent fluidity, it is preferably spherical cerium oxide, more preferably by methyl decane A spherical cerium oxide which has been subjected to surface treatment with a mixture, a phenyl decane coupling agent, a vinyl decane coupling agent, a methacryl decyl decane coupling agent or the like. Among them, in particular, from the viewpoint of controlling the dispersion component (γsd) in the surface free energy γ, spherical cerium oxide which has been surface-treated by a phenyl decane coupling agent is preferred. By using the surface-treated spherical cerium oxide, the film forming property of the film for semiconductor bonding can be improved, and the storage elastic modulus and the surface free energy can be adjusted to a specific range.

The average particle diameter of the inorganic filler is not particularly limited, but is preferably about 0.01 to 1 μm from the viewpoints of transparency, fluidity, and bonding reliability of the film for semiconductor bonding.

The above inorganic filler may be used singly or in combination of a plurality of inorganic fillers.

The adhesive film for semiconductor bonding of the present invention may further contain a binder, a thixotropy-imparting agent, a solvent, an inorganic ion exchanger, a barrier agent, an imidazole oxime coupling agent, and the like, an adhesion imparting agent, a rubber particle, etc., if necessary. Other additives such as stress relieving agents.

The thickness of the adhesive film for semiconductor bonding of the present invention is not particularly limited, but a preferred lower limit is 5 μm, a preferred upper limit is 60 μm, a more preferred lower limit is 10 μm, and a more preferred upper limit is 50 μm.

The method for producing the adhesive film for semiconductor bonding of the present invention is not particularly limited, and examples thereof include a method in which other additives are blended and blended in a specific amount to a thermosetting resin, a thermosetting agent, and a high molecular weight compound, as needed. The obtained resin composition was applied onto a release film and dried to produce a film. The method of mixing described above is not particularly limited, and examples thereof include a method using a homogeneous phase disperser, a universal mixer, a Banbury mixer, and a kneader.

The adhesive film for semiconductor bonding of the present invention is bonded to a wafer having an aluminum wiring pattern, and is cut along a scribe line (cut line) while being bonded to the surface of the wafer. Thereby, a semiconductor wafer to which the adhesive film for semiconductor bonding of the present invention is attached can be obtained. The obtained semiconductor wafer is thermocompression-bonded to a substrate or the like by the adhesive film for semiconductor bonding of the present invention.

The method of bonding the film for semiconductor bonding of the present invention to the wafer having the aluminum wiring pattern is not particularly limited, and examples thereof include lamination under normal pressure, vacuum lamination, and the like. The laminating air may be present in the lamination under normal pressure, but it may be heated in a pressurized environment to remove voids after being bonded, using a pressure curing oven (for example, PCO-083TA (manufactured by NTT Advanced Technology)).

The method of cutting is not particularly limited, and examples thereof include previously known blade cutting and the like.

According to the present invention, it is possible to provide an interface which is difficult to interface with a wafer, particularly a wafer having an aluminum wiring pattern on a scribe line, when being cut along a scribe line (cut line) in a state of being attached to the surface of the wafer. It is difficult to cause peeling of the adhesive film for semiconductor bonding.

1‧‧‧矽 wafer

2‧‧‧dick

3‧‧‧Semiconductor wafer

4‧‧‧ protruding electrode

5‧‧‧Metal wiring pattern

6‧‧‧The intersection of the entry line

Fig. 1 is a plan view schematically showing a region of a wafer surface on which a scribe line is formed.

2 is a plan view schematically illustrating an evaluation method of cutting evaluation using a wafer with an aluminum film.

Hereinafter, the present invention will be described in further detail by explaining the examples, but the invention is not limited to the examples.

(Example 1)

The materials described in Table 1 were used. According to the blending composition described in Table 2, each material was added to methyl ethyl ketone (MEK) as a solvent, and the mixture was stirred and mixed using a homodisperser to prepare an adhesive solution. The obtained adhesive solution was applied onto a release PET film by using an applicator so as to have a thickness of 20 μm after drying, and dried, whereby an adhesive film was produced. Protecting the surface of the obtained adhesive layer with a release PET film (protective film) until use until.

The dynamic viscoelasticity measuring device (DVA-200 manufactured by IT Measurement and Control Co., Ltd.) was used to carry out stepwise temperature rise in a temperature range of -50 to 130 ° C, and the storage elastic modulus was measured in a frequency dispersion mode. The main curve of 23 ° C was prepared assuming the water temperature at the time of cutting, and 40000 rpm / 60 = 667 Hz was used as the frequency corresponding to the number of revolutions of the dicing blade, thereby reading the storage elastic modulus at this frequency.

Using a contact angle meter (KSV CAM200 manufactured by KSV Instruments Co., Ltd.), the contact angle of water and diiodomethane with respect to the surface of the film attached to the wafer with the aluminum wiring pattern (solid surface) was measured, according to the obtained The contact angle is calculated by the above-described equations (1) to (3) using the geometric mean method, and the dispersion component (γsd) and the polar component (γsp) in the surface free energy γ are calculated. Further, 2 μL of water and 3 μL of diiodomethane were added dropwise, and the contact angle after the dropwise addition for 30 seconds was measured.

(Examples 2 to 7 and Comparative Examples 1 to 2)

An adhesive film was obtained in the same manner as in Example 1 except that the composition shown in Table 2 was used.

<evaluation>

The following films obtained in the examples and the comparative examples were subjected to the following evaluations. The results are shown in Table 2.

(1) Cutting evaluation using a wafer with an aluminum film

Prepare a wafer with an aluminum film (8 inches in size and 725 μm in thickness). The aluminum film is formed on the entire surface of the wafer, and an Al-Cu film (5000 Å ± 10%) is formed on the thermal oxide film (1000 Å ± 10%). Next, using a vacuum laminator (ATM-812 manufactured by Takatori Co., Ltd.), an adhesive film (thickness: 20 μm) cut into a size of 50 mm × 50 mm was bonded to the surface of the wafer at a vacuum of 100 °C at 80 °C.

FIG. 2 is a plan view schematically illustrating an evaluation method of cutting evaluation using a wafer with an aluminum film. Using a cutting blade (ZH05-SD4800N1-70 manufactured by DISCO), with a water temperature of 23 ° C, a number of revolutions of 40,000 rpm, and a feed speed of 20 mm/sec, as shown in Fig. 2 The wafer 1 was cut from the surface of the bonding film in the XY direction at intervals of 5 mm. The dicing depth of the wafer at this time was set to 100 μm. Microscopic observation of 25 parts of the intersection point 6 of the incision line of the wafer, and whether there is peeling of the film adjacent to the incision line, with 4 points (substantially zero), 2 points (there are several parts), 0 points (Generate multiple) 3 levels for scoring, and the comprehensive score is set to the number of points (0~100pt). The ○× determination was performed as follows.

×: 0~30pt

△: 31~60pt

○: 61~90pt

◎: 91~100pt

(2) Cutting evaluation using a wafer with an aluminum wiring pattern

A wafer having an aluminum wiring pattern formed on a scribe line (12-inch size, thickness: 100 μm) was used for the evaluation of the cut. After using a vacuum laminator (ATM-812 manufactured by Takatori Co., Ltd.), the adhesive film was bonded to the entire surface of the wafer at a vacuum of 80 ° C and 100 Pa, and a dicing blade (ZH05-SD4800N1-70 manufactured by DISCO Corporation) was used. The wafer was cut by a full-cut along the scribe line at a water temperature of 23 ° C, a number of blade revolutions of 40,000 rpm, and a feed speed of 20 mm/sec.

The presence or absence of peeling of the adhesive film was visually observed, and the peeled portion was judged as ×, and the non-peeled portion was judged as ○.

[Industrial availability]

According to the present invention, it is possible to provide an interface which is difficult to interface with a wafer, particularly a wafer having an aluminum wiring pattern on a scribe line, when being cut along a scribe line (cut line) in a state of being attached to the surface of the wafer. It is difficult to cause peeling of the adhesive film for semiconductor bonding.

1‧‧‧矽 wafer

2‧‧‧dick

3‧‧‧Semiconductor wafer

4‧‧‧ protruding electrode

5‧‧‧Metal wiring pattern

Claims (1)

An adhesive film for semiconductor bonding, which is bonded to a wafer having an aluminum wiring pattern, wherein: (1) the storage elastic modulus at a frequency corresponding to the number of revolutions of the dicing blade is 7.5 GPa or less. And/or (2) using two or more types of surface energy to measure the known measurement reagent, and the obtained dispersion component (γsd) of the surface free energy γ of the surface of the wafer to which the aluminum wiring pattern is attached is 30 mJ. /m ² or more.