TW201522693A - Device for vacuum treating substrates in a vacuum coating system and vacuum coating system comprising a device - Google Patents

Abstract

The invention relates to a device for vacuum coating substrates in a vacuum chamber, characterized by a suction device (19) which comprises one or more suction openings (80) for gas and at least one pump (12, 16) connected to one or more suction openings (80). The one or more suction openings (80) has a working range which extends at least twice as wide, parallel to a longitudinal axis (70) of the substrate support device (60), than in a direction which is perpendicular thereto. The invention further relates to a vacuum coating device for vacuum coating by means of the device.

Description

A processing device for vacuum processing a substrate in a vacuum plating apparatus and a vacuum plating device having a processing device

The present invention relates to a processing apparatus for vacuum-treating a substrate in a vacuum plating apparatus as described in the separate item, and a vacuum plating apparatus having such a processing apparatus.

Systems for vacuum plating substrates in batch processing mode are known. For example, DE 37 31 688 A1, EP 1 947 211 A1 or WO 2012/010318 A1 each describe a treatment device for metallizing a substrate with a vacuum chamber provided with at least one evaporation source, and for applying electricity. A processing device for the slurry polymeric protective layer and a planetary substrate holder arranged to rotate about a central axis.

When producing a uniform quality coating on a substrate, particularly when vacuuming with successive plating steps, it is necessary to use an optimum vacuum and/or to provide a process gas for all substrates as uniformly as possible.

The vacuum chamber is usually evacuated by a vacuum pump connected to the vacuum chamber through the central hole, in particular, the processing gas and the exhaust gas are taken up to provide different processing conditions for different substrates, thereby producing coatings of different qualities (different layer characteristics). Floor.

It is an object of the present invention to provide a processing apparatus for vacuum treating a substrate in a vacuum chamber for lowering the metal layer with higher quality, shorter charging time and higher productivity in a low cost manner. Evenly plated to the substrate.

Another object of the present invention is to provide a compact vacuum chamber that saves space and enables a flexible process.

The solution of the present invention to achieve the above object is a feature of an independent item. Advantageous embodiments are referred to the dependent items, the inventive content and the drawings.

A processing apparatus for vacuum plating a substrate in a vacuum chamber by at least one processing source according to the present invention, comprising at least one substrate carrier device for fixing one or more substrates, for treating a gas An input device and at least one suction device having one or more suction ports for the gas and at least one pump coupled to the one or more suction ports, wherein the substrate carrier device has a longitudinal axis. The one or more suction ports have an active area having a length in a direction along a longitudinal axis of the substrate carrier device that is at least twice a length in a direction perpendicular to the longitudinal axis.

An advantage of the present invention is that the present invention enhances the uniformity of vacuum suction characteristics, process gas input, and plating flow rate through the elongated substrate carrier device as compared to conventional solutions. In particular, the substrate carrier device can have one or more cylindrical rotating substrate carriers ("towers") to reduce the cycle time of such machines while improving plating quality, thereby increasing Its productivity.

The substrate can be plated with the same quality along the longitudinal extent of the substrate carrier device. The substrate carrier device can be vertically arranged, which reduces the area of the vacuum plating apparatus to make good use of the existing space height. For example, a common tower used as a substrate carrier device can have a height of several meters.

"Vertical" This expression describes the vacuum chamber as a reference system. "Quality" This expression is a parameter indicating the characteristics of the plating, especially layer thickness, chemical stability, reflection coefficient and/or color impression.

The treatment device according to the invention is particularly suitable for use in so-called "batch vacuum plating equipment" which performs a plurality of plating steps under different processing conditions, in particular for batch vacuum plating equipment requiring different pump configurations, wherein The substrate (workpiece) to be plated is disposed on an extended area of the substrate carrier device.

The treatment device is particularly suitable for vacuum metallizing a three-dimensional shaped part, such as a lamp reflector or the like. Typically, such a batch vacuum plating apparatus is employed for this purpose, in which a single step required for plating is carried out in a single vacuum chamber and the vacuum chamber is overflowed after each treatment. There are typically multiple substrates in such equipment that need to be plated during the same process. To achieve an equivalent plating effect on all such substrates, the substrates can be passed through a working plating source, for example by a rotating substrate carrier.

Preferably, a suction power is generated by the suction device at the location of the substrate carrier device, particularly on the surface or side surface on which the substrate is disposed, along the substrate carrier device. The longitudinal extent of the change is small. The present invention allows the suction power of the vacuum pumps to be distributed as evenly as possible across the substrate carrier device for all workpieces. This can be achieved by successively performing different plating steps that require different vacuum pumps in order to apply the suction power of the respective vacuum pump to the workpiece in a uniformly distributed manner.

According to a preferred embodiment, the suction device can comprise at least two high vacuum pumps arranged in a separate manner, in particular parallel to the longitudinal axis of the substrate carrier device. Additionally or alternatively, at least two respective separate forefront vacuum devices can be provided.

The suction device is preferably assigned a suction face, wherein the suction face is arranged parallel to the longitudinal axis of the substrate carrier device. In particular, the suction surface can be an elongated inlet of a pump passage parallel to the longitudinal axis of the substrate carrier device, in which a plurality of pumps and/or vacuum connections are disposed. In particular, the extent of the suction surface along the longitudinal axis is at least 50% of the longitudinal extent of the substrate carrier device. To increase the uniform distribution of suction power during critical processing stages when plating the substrate, the tubular joint to the vacuum pump can be elongated along the longitudinal axis of the substrate carrier device.

According to a preferred embodiment of the present invention, the suction port has a suction surface disposed relative to the substrate carrier device, and a length in a direction along a longitudinal axis of the substrate carrier device is at least perpendicular to the vertical axis. The length of the direction is twice. Alternatively, the plurality of suction ports have a plurality of suction faces disposed relative to the substrate carrier device, the total area in the direction along the longitudinal axis of the substrate carrier device being at least perpendicular to the longitudinal axis. Double the total area in the direction.

Preferably, the suction device generates a suction power at the position of the substrate carrier device, so that the vacuum treatment performed on the substrate of the substrate carrier device by the processing source can The longitudinal extent of the substrate carrier device is performed with the same quality. "Quality" This expression is a parameter that describes the characteristics of the plating, especially layer thickness, chemical stability, reflection coefficient and/or color impression.

The suction device preferably comprises at least two high vacuum pumps and/or at least two forefront vacuum devices arranged in a separate manner.

To achieve the effect of effectively engaging the elongate suction port with the one or more vacuum pumps, the one or more vacuum pumps are preferably split into a plurality of smaller units and distributed over the length of the suction port. Both a turbo molecular pump and an oil diffusion pump can be used. Multiple smaller pumps can be used, the additional cost of which can be compensated for by cost-cutting measures on the equipment (eg, by not providing bulky equipment components and components such as valves, vacuum lines, etc.).

Similarly, the suction power that can be used to pump out the atmosphere and the foreline vacuum pump for plasma processing also joins the vacuum chamber in an elongated distribution. Preferably, a space required for the elongate seal can be employed in the vacuum chamber for this purpose.

Another aspect of the present invention provides a vacuum plating apparatus using the processing apparatus of the present invention for vacuum processing a substrate in a vacuum chamber, wherein a suction device is provided, which has A suction device that matches the structure of the substrate carrier device. The suction device preferably forms a flow cell for treating the gas and the gas generated during the vacuuming process (and the gas released by the substrate or chamber wall) along the longitudinal axis of the substrate carrier device In the direction The length is at least twice the length in a direction perpendicular to the longitudinal axis. This allows the input process gas to be evenly distributed along the longitudinal extent of the substrate carrier device.

The vacuum plating apparatus may preferably be a so-called "batch vacuum plating apparatus" which performs all the steps required for plating in a single vacuum chamber. The vacuum chamber can be flooded after each treatment process is completed.

All necessary plating tools can be located in the vacuum chamber, such as a plasma source for performing a glow treatment or deposition of a plasma-CVD topcoat, for true metallization The evaporation source or the sputtering source, and the joints for inputting the processing gas and the connections of the respective vacuum pumps in each processing step (depending on the steps). A plurality of substrates that need to be plated during the same process can be disposed on the substrate carrier unit. To achieve an equivalent plating effect on all such substrates, the substrates can be passed through a working plating source, for example by a rotating substrate carrier. In this way, the suction power of the suction device can be as uniform as possible for all workpieces. It is also possible to supply air as evenly as possible along the longitudinal extent of the substrate carrier unit.

The key to achieving uniform layer quality is, in particular, the coupling of the suction power to the vacuum chamber in two plating stages: - using PVD (physical vapor deposition, such as spraying or thermal evaporation) with as clean a basic as possible The metallization is carried out by vacuum, a plating step comprising plasma deposition (CVD, chemical vapor deposition), and a treatment atmosphere consisting of the process gas and the treated exhaust gas as uniformly as possible in the region of the substrates.

Different pump systems are used for the two plating stages, with higher suction power being preferred. Higher pumping power in high vacuum typically requires a larger pipe cross-section, which typically increases the cost of a large volume pump. The vacuum plating apparatus of the present invention does not require expensive pumps and pump lines, and can reduce the size of the apparatus and shorten the cycle time.

The vacuum-pumping characteristics can be uniformly coupled to the entire surface of the substrate carrier unit in accordance with the present invention. This prevents the pumping cycle or layer quality from being caused by the substrate on the substrate carrier device. Poor location and severely affected.

A high vacuum pump is used to implement the PVD method. In this way, it is advantageously possible to effectively pump water vapor overflowing from the surface of the substrate. A combination of a high vacuum pump (such as an oil diffusion pump), a turbo molecular pump, and a cold trap can be used to solidify the water vapor. Higher suction power in high vacuum requires a larger pipe cross section. The restricted side of the substrate carrier device (such as a tower) is used to effect coupling, which is also used to arrange the plating source. Conventional vacuum plating equipment is provided with a single larger tubular joint for pumps in high vacuum. This causes (especially) uneven pumping of water vapor which condenses (adsorbs) on the wall area away from the tubular joint. In order to obtain a vacuum sufficient to achieve an acceptable layer quality on the substrate herein, it is necessary to extend the pumping cycle, which increases the cycle time of the entire apparatus and reduces equipment productivity.

Plasma treatment, such as plasma CVD for depositing an anti-corrosion layer, is usually performed in a pre-stage vacuum. This treatment requires treatment gas and process exhaust gas to flow in and out in a uniform manner for all substrates. Otherwise, there will be a problem that the reaction gas stays for too long, and dust is formed.

As mentioned above, the position on the side of the substrate carrier device for accommodating a plurality of pump joints is limited, so that only one such joint is usually provided in the conventional device, which combines the high vacuum suction pipe with the front vacuum pipe. For one.

According to an advantageous refinement of the invention, the suction device can comprise at least two high-vacuum pumps and/or fore-stage vacuum devices which are arranged in a separate manner, in particular parallel to the longitudinal axis of the substrate carrier device.

The suction device preferably includes at least one seal for the sealable suction port, wherein the sealable suction port is parallel to the longitudinal axis of the substrate carrier device. This achieves an advantageous arrangement of the suction device. When the high vacuum pump is operated on the batch equipment, it is necessary to provide several safety valves between the vacuum chamber that is overflowed after each treatment process and the high vacuum pump or cold trap that needs to be protected. In the case of larger pipe cross sections, these valves are often complex and expensive. It is difficult and bulky. If the valve plate is rotated out perpendicular to the cross-section to be blocked, the arrangement requires at least twice the cross-sectional area of the pipe on the aforementioned narrower side of the substrate carrier device, if perpendicular to the resistance to be blocked Rotating the valve plate in a broken area manner, the valve plate extends into the chamber and reduces the available volume for the substrate carrier device.

The at least one seal may be formed by a longitudinally elongated cover plate along the longitudinal direction of the substrate carrier device that extends only slightly into the chamber volume after opening. The cover may also be divided into two or more blades that are longitudinally separated. The seal can also be implemented as one or more sliders. Preferably, the seal may also block a high vacuum pump and/or a cold trap while venting the vacuum chamber, as the process allows.

Preferably, the vacuum plating apparatus may be provided with a processing source for vacuum cleaning the substrate disposed on the substrate carrier device, wherein the longitudinal extension of the processing source is preferably coupled to the substrate. Corresponding to the device.

There is further provided at least one source of material for vacuum plating a substrate disposed on the substrate carrier device, wherein the source material preferably has a longitudinal extent corresponding to the substrate carrier device. The radiation characteristics of the source of material preferably correspond to the longitudinal extent of the substrate carrier device and/or the extent of the flow channel of the suction device.

The source of material is preferably arranged according to its spatial radiation characteristics. The radiation characteristic of, for example, the evaporator element herein refers to the angular dependence of the flow density of the evaporation material loaded into the evaporator group.

The at least one source of material may preferably be arranged in a manner that can be replaced with another source of material. For example, different sputtering sources can be used, such as flat cathodes and tubular cathodes, which can be replaced between plating steps.

Preferably, at least two different vacuum pump types may be provided for performing different plating steps of at least two vacuum pump types, for example, a high vacuum pump for performing sputtering plating and a front stage for performing CVD processing. Vacuum pump.

Preferably at least two different sources of material are provided in the vacuum chamber. The elongate engagement of the suction device provides more position on the side of the substrate carrier device, in particular which is rotatable about its longitudinal axis, so that more material sources can be provided, for example, more Plasma source electrodes that accelerate plasma processing, more sputtering sources for improving the flexibility of vacuum plating equipment, and the like.

A radiant heater for thermally applying a substrate disposed on the substrate carrier device, such as for accelerating the release of water vapor bound to the surface of the substrate, may also be provided for faster adaptation. The basic pressure for the substrate metallization process.

More preferably, one or more sources of material are constructed at the location of the substrate carrier device depending on the suction power distribution of the suction device. The source of material may be elongated similar to the suction power distribution on the substrate carrier device, particularly on the side of the tower.

1‧‧‧Processing device

10‧‧‧vacuum room

11‧‧‧Shell

12‧‧‧Pre-stage vacuum unit

12a, 12b‧‧‧vacuum joints

16‧‧‧High vacuum device

16a, 16b‧‧‧ pump

18‧‧‧ pump channel

19‧‧‧Suction device

20‧‧‧ Cold trap

21‧‧‧孔口

22‧‧‧ aperture

30‧‧‧ valve

31‧‧‧ cross section

40‧‧‧Processing source

41‧‧‧Electrode

42‧‧‧Electrode

50‧‧‧Material source

51‧‧‧ Sputtering source

60‧‧‧Substrate carrier device

62‧‧‧ side

64‧‧‧Processing gas

70‧‧‧ vertical axis

72‧‧‧ longitudinal extension

80‧‧‧ suction port

81‧‧‧Ventilation protection

90‧‧‧ heating device

91‧‧‧ vertical axis

100‧‧‧ plating equipment

1 is a longitudinal cross-sectional view of a first embodiment of a vacuum plating apparatus of the present invention, the vacuum plating apparatus including a processing apparatus for vacuum processing a substrate; and FIG. 2 is a substrate carrier apparatus in the form of a tower A view comprising a plasma electrode, a suction device, and a radiant heater.

The invention will be described in detail below with reference to the accompanying drawings.

The vacuum plating apparatus 100 shown in FIG. 1 includes a processing apparatus 1 for vacuum-treating a substrate in a vacuum chamber 10, the vacuum chamber including a cut-away housing 11. The processing device 1 comprises at least one substrate carrier device 60 and a suction device 19.

The suction device (19) has a suction port 80 for the gas and a plurality of pumps 12, 16 connected to the suction port 80. The suction port 80 has an active area having a length in a direction parallel to the longitudinal axis 70 of the substrate carrier device 60 of at least two of the lengths perpendicular to the longitudinal axis. Times.

The pumps are constructed as a front stage vacuum unit 12 and a high vacuum unit 16.

The substrates are preferably used, for example, in three-dimensional substrates in the automotive field, computers, communication electronics or consumer electronics. The substrates are preferably constructed of a plastic material, but other materials may be used.

A cylindrical substrate carrier device 60 in the form of a tower is used to house a substrate (not shown). The substrate carrier device 60 has a vertical longitudinal extent 72. The longitudinal extent 72 is typically from 150 cm to 200 cm. The substrate carrier device 60 is rotatable about a driven longitudinal axis 70 that serves as the axis of rotation 74 and is constructed as a tower, that is, constructed as a cylindrical frame structure. For the sake of simplicity, FIG. 1 does not show more details of the substrate carrier device 60 and the substrate on which the device 60 is housed.

The substrate carrier device 60 forms a side 62 during rotation. A source of material 50 in the form of a flat sputter cathode 51 is disposed adjacent the side 62, the vertical axis of the sputter cathode being parallel to the longitudinal axis 70 of the substrate carrier device 60. There is some angular deviation of less than 10o between the longitudinal axis of material source 50 and the axis of rotation 74 of the tower (substrate carrier device 60). A plurality of material sources 50 may also be provided, i.e., a plurality of evaporation devices are provided in addition to the sputtering cathode. To achieve the effect of equivalent plating on the substrate, the substrate can be passed through a working material source 50 by the rotary substrate carrier device 60.

It goes without saying that the present invention also includes a processing apparatus having more than one substrate carrier device 60, each having a tower comprising a plurality of substrate securing members. Preferably, there is some angular deviation of less than 10o between the longitudinal axis of the source of material and the axis of rotation of the tower.

The vacuum plating apparatus 100 also includes a processing source 40 for the substrate that is constructed as a plasma source. The plasma source includes means for exciting a plasma discharge in the region in which the substrate carrier device 60 is disposed for plasma treatment of the substrates. The treatment source 40, in particular the plasma source, can be adapted to pretreat the surface of the substrate, in particular by plasma CVD, and/or to perform plasma plating. In particular, an inlet for the reactive gas 64 may be provided.

In the embodiment shown in FIG. 1, the processing source 40 includes an electrode 41 and an opposite electrode 42 and a (not shown) grounded vacuum container for generating plasma, particularly for one or more substrates. The glow discharge to be treated on the surface to be treated. The electrodes 41, 42 are plate-shaped with an elongated geometry generally parallel to the axis of rotation 74. Processing source 40 preferably operates with an alternating voltage having a frequency between 1 Hz and 350 MHz, and more preferably 40 kHz.

It goes without saying that the invention also includes more construction options and a greater number of processing sources, especially for plasma sources for performing plasma CVD processing, for example for surface coatings. Plated to the metal layer. The present invention may also include a separate plasma source dedicated to the processing of certain substrates. One of the processing sources can also be set for more than one process, such as glow discharge or PECVD.

The material source 50 and the processing source 40 are dimensioned along the rotating shaft 74 according to the compensation for the final effect of the space, that is, the substrate carrier device is protruded to some extent by the sputtering source 51 or the processing source 40. The end region of 60. In addition, the plating rate in the end region of the material source 50 or substrate carrier device 60 can be compensated for by some measure, such as by providing an aperture in the intermediate region between the end regions. .

Suction device 19 forms a flow cell for processing gas 64 and provides a gas suction device that mates with the structure of substrate carrier device 60, particularly the tower structure. The length of the flow channel in the direction along the longitudinal axis 70 of the substrate carrier device 60 is at least twice the length in a direction perpendicular to the longitudinal axis. The flow channel substantially corresponds to a pump passage 18 extending longitudinally parallel to the longitudinal axis 70 of the substrate carrier device, the pumps 16a, 16b and the vacuum connections 12a, 12b being coupled to the pump passage.

The suction device 19 of the present embodiment includes at least two high vacuum pumps 16a, 16b that are arranged in a separate manner parallel to the longitudinal axis 70 and mounted on the end of the pump passage 18. In order to increase the pumping power, a cold trap 20 having orifices 21, 22 is provided which expose the pump cross section of each of the pumps 16a, 16b. At the upper end and the lower end of the pump passage 18, there is also a front stage with outlets 12a, 12b. The empty joint 12, the pump passage 18 is closed by a flow-reducing grid 81 leading to the vacuum chamber 10.

The suction port 80 has a suction surface disposed relative to the substrate carrier device 60, the length of which is parallel to the longitudinal axis 70 of the substrate carrier device 60, at least two of the lengths perpendicular to the longitudinal axis. Times. In another (not shown) embodiment, the suction device has a plurality of suction ports including a plurality of suction faces disposed relative to the substrate carrier device 60, the suction faces being parallel to the substrate carrier device The total area in the direction of the longitudinal axis 70 of 60 is at least twice the total area in the direction perpendicular to the longitudinal axis.

The suction device 19 comprises at least one seal 30 for a sealable cross section 31, wherein the sealable cross section 31 is parallel to the longitudinal axis 70. The cross section 31 preferably corresponds to the cross section of the pump passage 18.

The seal 30 is formed by a plurality of longitudinally separated cover plates (only one of which is shown) which may be vacuumed when the vacuum chamber 10 is vented between two processing steps. Sealed closed.

A certain suction power can be generated at the substrate carrier device 60 by the suction device 19, which varies along the longitudinal extent 72 of the substrate carrier device 60 by a maximum of 10%.

2 is a simplified diagram of a substrate carrier device 60 in the form of a tower comprising electrodes 41, 42 of a processing source 40 and a suction device 60, and a radiant heater 90 having a longitudinal axis 91 parallel to the base The longitudinal axis 70 of the material carrier device 60.

The radiant heater 90 is used to thermally apply a substrate disposed on the substrate carrier device 60 and to heat the substrate to accelerate the release of water vapor bound to the surface of the substrate for faster implementation of the substrate. The basic pressure of metallization.

1‧‧‧Processing device

10‧‧‧vacuum room

11‧‧‧Shell

12‧‧‧Pre-stage vacuum unit

12a, 12b‧‧‧vacuum joints

16‧‧‧High vacuum device

16a, 16b‧‧‧ pump

18‧‧‧ pump channel

19‧‧‧Suction device

20‧‧‧ Cold trap

21‧‧‧孔口

22‧‧‧ aperture

30‧‧‧ valve

31‧‧‧ cross section

40‧‧‧Processing source

41‧‧‧Electrode

42‧‧‧Electrode

50‧‧‧Material source

51‧‧‧ Sputtering source

60‧‧‧Substrate carrier device

62‧‧‧ side

64‧‧‧Processing gas

70‧‧‧ vertical axis

72‧‧‧ longitudinal extension

80‧‧‧ suction port

81‧‧‧Ventilation protection

100‧‧‧ plating equipment

Claims (16)

A processing apparatus (1) for vacuum plating a substrate in a vacuum chamber (10) by at least one processing source (40, 50), comprising at least one substrate for fixing one or more substrates Material carrier device (60) (wherein the substrate carrier device (60) has a longitudinal axis (70)), an input device (64) for processing gas, and at least one suction device (19) having one or a plurality of suction ports (80) for gas and at least one pump (12, 16) connected to the one or more suction ports (80), wherein the one or more suction ports (80) have a The active region has a length in a direction parallel to the longitudinal axis (70) of the substrate carrier device (60) that is at least twice the length in a direction perpendicular to the longitudinal axis. The processing device of claim 1, wherein the suction port (80) has a suction surface disposed opposite to the substrate carrier device (60), which is parallel to the substrate carrier device (60) The length in the direction of the longitudinal axis (70) is at least twice the length in the direction perpendicular to the longitudinal axis, or the plurality of suction ports have a plurality of suctions arranged relative to the substrate carrier device (60) The total area of the face in a direction parallel to the longitudinal axis (70) of the substrate carrier device (60) is at least twice the total area in a direction perpendicular to the longitudinal axis. A processing apparatus according to claim 1 or 2, wherein a suction power is generated by the suction device (19) at a position of the substrate carrier device (60), Treatment process (40) The vacuum treatment of the substrate of the substrate carrier device (60) can be carried out with the same quality along the longitudinal extent of the substrate carrier device (60). A processing apparatus according to any of the preceding claims, characterized in that the suction device (19) comprises at least two high vacuum pumps (16a, 16b) and/or at least two fore vacuums arranged in a separate manner Device (12a, 12b). A processing apparatus according to any one of the preceding claims, characterized in that the suction device (19) has a sealable cross section (31) along which the extension of the substrate (70) is the substrate At least 50% of the longitudinal extent (70) of the carrier device (60). A vacuum plating apparatus (100) comprising a processing apparatus (1) for vacuum treating a substrate in a vacuum chamber (10) according to any one of the preceding claims, characterized in that a suction device is provided (19), which has a suction device that matches the structure of the substrate carrier device (60). A vacuum plating apparatus according to claim 6 characterized in that the suction device (19) comprises at least two high vacuum pumps (16a, 16b) and/or a front stage vacuum device (12a) arranged in a separate manner. , 12b). A vacuum plating apparatus according to claim 6 or 7, characterized in that at least one seal (30) for the cross section (31) of the suction device (19) is provided, wherein the cross section ( 31) Arranged parallel to the longitudinal axis (70). A vacuum plating apparatus according to any one of claims 6 to 8, characterized in that a processing source for vacuum cleaning the substrate disposed on the substrate carrier device (60) is provided ( 40) wherein the longitudinal extent of the treatment source (40) preferably corresponds to the substrate carrier device (60). A vacuum plating apparatus according to any one of claims 6 to 9, characterized in that at least one processing source is constructed. It is used as a material source (50) for vacuum plating a substrate disposed on the substrate carrier device (60), wherein the longitudinal extension of the material source (50) is preferably with the substrate carrier device (60) Corresponding. A vacuum plating apparatus according to claim 10, characterized in that the at least one material source (50) is arranged in a manner replaceable to another material source. A vacuum plating apparatus according to any one of claims 6 to 11, characterized in that at least two different vacuum pump types (12, 16) are provided for implementing at least two vacuum pump types (12, 16) Different plating steps. A vacuum plating apparatus according to any one of claims 6 to 12, characterized in that at least two different material sources (50) are provided. A vacuum plating apparatus according to any one of claims 6 to 13, characterized in that a radiant heater for thermally applying a substrate disposed on the substrate carrier device (60) is provided. A vacuum plating apparatus according to any one of claims 6 to 14, wherein the substrate carrier device (60) is corresponding to the suction power distribution of the suction device (19). One or more material sources (50) are constructed in position. A vacuum plating apparatus according to any one of claims 6 to 15, characterized in that the apparatus is designed for batch processing of the substrates through a complete overflow of the vacuum chamber.