TW201520539A - Apparatus and method for processing a large area substrate - Google Patents

Abstract

An apparatus for processing a large area substrate and a method for measuring at least one optical property of a substantially vertically arranged large area substrate is described. The apparatus for processing a large area substrate comprises: a chamber arrangement for transporting the large area substrate therethrough in a vertically arranged state, wherein the chamber arrangement includes at least one chamber, a processing device for processing the vertically arranged large area substrate and an exit port for the vertically arranged large area substrate; a transport system for transporting the substrate through the chamber arrangement; and a measuring arrangement comprising an optical measuring device. The optical measuring device includes an illuminating device for emitting diffuse light onto the vertically arranged large area substrate, and a light detecting device for measuring at least one optical property of the vertically arranged large area substrate.

Description

Apparatus and method for processing a large area substrate

Embodiments of the present disclosure are directed to a processing system and a method for operating the same. In particular, they are related to devices for processing and monitoring large-area substrates and methods for measuring the properties of large-area substrates by optical means. The present disclosure relates in particular to in-line processing equipment. The apparatus of the present disclosure is particularly suitable for processing and measuring large area substrates in vertical configurations.

In several technical applications, several layers of different materials are deposited on each other on a substrate. Generally, this is accomplished by a series of coating or deposition steps, such as a sputtering step. For example, a stack of layers of "Material One" - "Material Two" - "Material One" can be deposited. In order to deposit several layers of stacks, a series configuration of several deposition modules can be used. A typical tandem system includes a plurality of successive processing modules, with a plurality of processing steps being performed in one cavity after another such that a plurality of substrates can be processed continuously or similarly in series. The different physical properties of the coating can be obtained by varying the process parameters, such as the deposition rate, the transmission speed of the substrate through several deposition modules, or other process parameters, such as different optical refractive properties.

Processing large-area substrates requires process monitoring and quality inspection to ensure high quality and reproducible quality of processed large-area substrates. For example, for quality inspection of coatings on large area substrates, the optical properties of the coated substrate need to be determined at a low cost of ownership. Large-area substrates are typically processed in a vertical configuration due to economic and space-saving issues. A problem associated with measuring the properties of a large-area substrate that is vertically disposed is that a large-area substrate is easily wobbled by gravity acting on the substrate. Since the relative position of the substrate and the measuring device may vary due to position and warpage, such warpage of the substrate may result in inaccurate optical measurements.

As a result, the need for improved substrate processing systems continues to exist, and the improved substrate processing system achieves accurate quality inspections that improve on large area substrates. Therefore, there is a need for an improved method of measuring the properties of a substrate, particularly for a processing system having high output capability.

In view of the above, the present disclosure provides an apparatus for processing large area substrates to overcome at least some of the problems in the art. According to the scope of the independent patent application, the apparatus is for processing a large-area substrate by at least some extent by means of a device and a method for measuring at least one optical property of a substantially large-area substrate of a substantially vertical configuration. Other aspects, advantages, and features of the present disclosure will become apparent from the appended claims.

In view of the above, an apparatus for processing a large area of a substrate is provided. The device for processing a large area substrate includes a cavity configuration for The qualitatively vertical configuration state transmits a large area substrate through it. The cavity arrangement includes at least one cavity, a processing device and an outlet port, the processing device is for processing a vertically disposed large-area substrate, and the outlet port is for a vertically disposed large-area substrate. Furthermore, the apparatus for processing a large-area substrate includes a transmission system for transmitting a large-area substrate through a cavity configuration in a substantially vertical configuration; and a measurement configuration including at least one optical measurement device, wherein the at least one The optical measuring device comprises a light emitting device and a first light detecting device, wherein the light emitting device emits diffused light onto the vertically arranged large-area substrate, and the first light detecting device is configured to measure the vertically arranged large-area substrate At least one optical property.

In accordance with one aspect of the present disclosure, an apparatus for processing a large area of substrate can be modified in the measurement configuration described herein. A method for modifying a device is disclosed for processing a large area of substrate. The method includes providing a device for processing a large area substrate having the measurement configuration described herein.

In accordance with another aspect of the present disclosure, a method for measuring at least one optical property of a substantially vertical configuration of a substantially large area substrate is provided, wherein the method includes: transmitting substantially in a transmission direction relative to a measurement configuration a large-area substrate disposed vertically; illuminating a substantially large-area substrate disposed substantially vertically with diffused light; and measuring the at least one optical property of the substantially-area substrate substantially vertically disposed.

The disclosure also relates to a device for performing the disclosed method, and the device includes device elements for performing the various described method steps. These method steps can be performed by a hardware component, a computer programmed by a suitable software, and thereby Any combination or execution in any other way. Furthermore, the present disclosure also relates to methods of operation by the apparatus described. It includes method steps for performing each function of this device.

Other aspects, advantages, and features of the present disclosure will become apparent from the appended claims. In order to better understand the above and other aspects of the present invention, the preferred embodiments are described below, and in conjunction with the drawings, the detailed description is as follows:

100‧‧‧ Equipment

110‧‧‧ cavity configuration

112‧‧‧Export

120‧‧‧ Large area substrate

121‧‧‧ first surface

122‧‧‧ second surface

131‧‧‧Transport carrier

132‧‧‧ bottom frame

133‧‧‧ frames

200‧‧‧Measurement configuration

210‧‧‧Optical measuring device

211‧‧‧Lighting device

212‧‧‧First light detecting device

213‧‧Scores

214‧‧‧Light source

215‧‧‧Second light detecting device

216‧‧‧Light exit埠

217‧‧‧ Measuring axis

218‧‧‧Detection direction

220‧‧‧Light block

221‧‧‧Absorption zone

222‧‧‧ line

230‧‧‧Processing device

301, 302, 303‧‧‧ process steps

D1, D2, D3, △D‧‧‧ distance

P‧‧‧ origin

α, β, δ, △β‧‧‧ angle

In order to understand the features of the present disclosure in detail, a more detailed description of the present disclosure may be referred to the embodiments. The accompanying drawings are directed to the embodiments of the disclosure and are described below. A few exemplary embodiments are shown in the drawings and are described in detail in the following description. In the drawings: FIG. 1 is a perspective view of an apparatus for processing a large-area substrate according to embodiments described herein; and FIG. 2 is a schematic view showing an embodiment of a transport carrier for a substrate, which is transmitted The carrier can be used in embodiments of the apparatus for processing large area substrates in accordance with embodiments described herein; FIG. 3 is a schematic diagram of another embodiment of a transport carrier for a substrate, the transport carrier can be used In an embodiment of an apparatus for processing a large area substrate according to embodiments described herein; FIG. 4 is a cross-sectional view showing an embodiment of an optical measuring apparatus used in accordance with In an embodiment of the apparatus for processing a large area substrate of the embodiment; 5 is a cross-sectional view showing an embodiment of an optical measuring device according to FIG. 4, wherein the substrate associated with the optical measuring device is compared with the relative position of the substrate and the optical measuring device in FIG. The relative position is shifted laterally; FIG. 6 is a cross-sectional view showing an embodiment of the optical measuring device according to FIG. 4, wherein the direction of the substrate is inclined compared to the direction of the substrate in FIG. 4; 7 is a cross-sectional view showing an embodiment of an optical measuring device used in an embodiment of an apparatus for processing a large-area substrate according to embodiments described herein; FIG. 8 is a view including A cross-sectional view of one embodiment of a light trap and optical measurement device, the optical block and optical measuring device used in an apparatus for processing a large area substrate in accordance with embodiments described herein. In the embodiment; FIG. 9 is a perspective view of an apparatus for processing a large-area substrate according to embodiments described herein; and FIG. 10 is a diagram showing substantially vertical measurement according to embodiments described herein Configuring at least one optical property of the large area substrate Example Law.

The detailed description is to be considered in terms of various embodiments, and one or more examples of the embodiments are illustrated in the drawings. The examples are provided by way of illustration and are not meant as a limitation. For example, the features illustrated or described as part of one embodiment can be used in any other embodiment or in combination with any other embodiment to achieve yet other embodiments. This means that the disclosure includes such adjustments and variations.

In the description of the following figures, the same reference numerals are used to refer to the same or similar elements. In general, only the differences between the various embodiments will be Description. Unless specifically exemplified, a portion or aspect of an embodiment is also applied to a corresponding portion or aspect of another embodiment.

The name "substrate" as used herein shall include a plurality of substrates commonly used in the manufacture of displays, such as glass or plastic substrates. For example, a substrate as described herein should include a number of substrates commonly used in liquid crystal displays (LCDs), plasma display panels (PDPs), and the like. Unless otherwise stated in the specification, the term "substrate" is understood to mean the "large area substrate" as specified herein. According to the present disclosure, the large area substrate may have a size of at least 0.174 m ² . The size may in particular be from about 1.4 m ² to about 8 m ² , more particularly from about 2 m ² to about 9 m ² , or even up to 12 m ² .

According to the present disclosure, a substrate provided to a device, a device cavity, and a method according to embodiments described herein is a large-area substrate or a transfer carrier having a large-area substrate or a large-area substrate, as described herein. . For example, a carrier having a size corresponding to a single substrate that is a large-area substrate may be the 4.5th, 5th, 7.5th, 8.5th, or even the 10th generation, and the 4.5th generation corresponds to about 0.67. The substrate of m ² (730 x 920 mm), the fifth generation corresponds to a substrate of about 1.4 m ² (1.1 mx 1.3 m), the 7.5th generation corresponds to a substrate of about 4.29 m ² (1.95 mx 2.2 m), and the 8.5th generation corresponds. the substrate ² at about 5.7m (2.2mx 2.5m), the first passage 10 corresponds to the substrate of about 8.7m ² (2.85m × 3.05m). Even higher generations such as the 11th and 12th generations can be applied in a similar manner to the corresponding substrate area. However, individual carriers of this size can also be used to support several substrates.

According to embodiments described herein, the substrate is in a substantially vertical direction. By this, it will be appreciated that the substrate in the vertical direction can be offset from a vertical direction in the processing system by a vertical direction of 90[deg.] to allow for stable transmission when tilted at some angle, for example 15[deg.] or less.

As shown in FIG. 1, an apparatus 100 for processing a large area substrate 120 in accordance with embodiments described herein includes a cavity configuration 110 for transporting a large area substrate 120 therethrough in a vertically disposed state, wherein the cavity The arrangement 110 includes at least one cavity, processing means (not shown) and an exit port 112 for processing the vertically disposed large area substrate 120, and the exit port 112 for the vertically disposed large area substrate 120. Moreover, in accordance with embodiments described herein, apparatus 100 for processing large area substrate 120 includes a transmission system (not shown) and measurement configuration 200. The transport system is used to transport the vertically disposed large area substrate 120 through the cavity configuration 110, and the measurement arrangement 200 includes at least one optical metrology device 210. According to the embodiment described herein, the at least one optical measuring device 210 includes a light emitting device 211 and a first light detecting device 212, and the light emitting device 211 is configured to emit diffused light onto the vertically disposed large-area substrate 120, the first light. The detecting device 212 is configured to measure at least one optical property of the vertically disposed large area substrate.

4 is a cross-sectional view of one embodiment of an optical metrology device 210 used in an embodiment of the apparatus described herein. As exemplarily shown in FIG. 4, the light-emitting device 211 of the at least one optical measuring device 210 includes an integrating sphere 213 and a light source 214, and the light source 214 emits light into the integrating sphere 213. According to several embodiments, which can be combined with other embodiments described herein, the light source is configured for illumination, and the light is in the visible radiation range of 380-780 nm and/or the infrared radiation of 780 nm to 3000 nm. Within the range of and/or from 200 nm to 380 nm of ultraviolet radiation.

According to several embodiments, which can be combined with other embodiments described herein, the light source 214 of the illumination device 211 is configured such that light can be emitted into the integrating sphere 213. The light source may be disposed in the integrating sphere 213 or attached to the inner wall of the integrating sphere 213. According to several embodiments, the light source 214 can be disposed outside the integrating sphere, wherein the wall of the integrating sphere includes an opening configured such that light from the source can illuminate the interior of the integrating sphere.

According to several embodiments, which can be combined with other embodiments described herein, the light source 214 can be configured, for example, as a filament bulb, a tungsten halogen bulb, a light emitting diode (LEDs), high power. LEDs or xenon arc lamps (Xe-Arc-Lamps). Light source 214 is configurable such that the light source can be turned on and off for a short period of time. For switching, the light source can be connected to a control unit (not shown).

According to several embodiments, which can be combined with other embodiments described herein, the at least one optical measuring device is located on one side of the substrate 120 to be measured, as exemplarily shown in FIG. According to several embodiments, the integrating sphere 213 is disposed at a distance D1 relative to the substantially vertically disposed substrate 120, the distance D1 being associated with the first surface 121 of the substrate, within a tolerance of ±25 mm, D1 = 30 mm, particularly Within ±20mm tolerance, and more particularly within ±15mm tolerance. As exemplarily shown in FIG. 4, the integrating sphere 213 may be provided with a light exit port 216, which is disposed at a distance D1 from the first surface 121 of the substrate 120, within a tolerance of ±25 mm, D1 = 30 mm, Especially within tolerances of ±20 mm, more particularly within tolerances of ±15 mm. Thereby, the self-integrating sphere is emitted and passes through the light exit port 216 The diffused light can be illuminated on the substrate for measuring at least one optical property of the substrate. By illuminating the substrate with diffused light, the light that impinges on the substrate has the same intensity across the substrate. According to some embodiments, which may be combined with other embodiments described herein, the diffused light emitted may be characterized by a plurality of angles of light, particularly the intensity of light having a uniform angular distribution. For example, this can be produced by diffuse reflection in an integrating sphere, such as an Ulbricht sphere, where the material in the sphere is selected to provide diffuse reflection.

Due to the metrology configuration in accordance with the embodiments described herein, the tolerance of the metrology system relative to substrate position and substrate warpage can be increased. For example, substrate warpage that results in an angular error of, for example, +-1° +-2° can be among the measured tolerances described herein.

As exemplarily shown in Fig. 4, before the beam exits the light exit port 216, the beam may have a position of the origin P on the inner surface of the integrating sphere, and the beam is indicated by the solid line having the arrow. The light beam can be transmitted through or reflected from the substrate, as exemplarily shown in FIG. 4, and in the case of reflection, enters the light exit port 216 in a manner having a reflection angle. According to several embodiments, which can be combined with other embodiments described herein, the first photodetecting device 212 is configured and arranged such that light reflected from the substrate 120 can be detected by the first photo detecting device 212. The light of the substrate 120 is, for example, from the first surface 121 of the substrate 120. The angle between the beam exiting the integrating sphere 213 through the light exit pupil 216 and the reflected beam entering the light exit pupil 216 may be the angle β of the beam of light in the present disclosure.

According to several embodiments, as exemplarily shown in FIG. 4, the optical quantity The measuring device 210 includes a measuring shaft 217. According to several embodiments, the measurement axis 217 is substantially perpendicular to the first surface 121 of the substrate 120. In the present disclosure, the direction of the light beam reflected from the substrate detected by the first light detecting device is the direction of detection of the first light detecting device, as exemplified by reference numeral 218 in FIG. Marked. According to several embodiments, the angle α between the detection direction 218 and the measuring axis 217 is in the range of 2° to 10°, in particular in the range of 2° to 8°, more particularly 2°. In the range of up to 4°, preferably less than 4°.

According to several embodiments, which can be combined with other embodiments described herein, the integrating sphere 213 has an inner diameter of 150 mm or less, particularly an inner diameter of 100 mm or less, more particularly an inner diameter of 75 mm or less. According to several embodiments, in providing a lighting device having a larger integrating sphere, the effect of the size of the light exit pupil 216 on the illumination quality of the substrate can be compensated, particularly reduced.

According to several embodiments, which can be combined with other embodiments described herein, the light exit pupil 216 of the integrating sphere 213 can have a diameter of 25 mm or less, in particular a diameter of 15 mm or less, more particularly 10 mm or less. The diameter. By increasing the diameter of the light exit pupil, a larger portion of the substrate can be illuminated for measuring the at least one optical property of the substrate.

According to several embodiments, which can be combined with other embodiments described herein, the first light detecting device 212 is configured and arranged such that no direct light from the light source 214 is detected by the first light detecting device 212. For example, a screen means (not shown) may be provided in the integrating sphere 213 to prevent the light emitted by the light source from directly entering the first light detecting device 212. Such screen means can be, for example, by shields, holes The apertures, apertures, or lens systems are arranged and arranged such that direct light that is not emitted by the light source 214 can illuminate the first light detecting device 212.

According to several embodiments, which can be combined with other embodiments described herein, the first light detecting device 212 is configured and arranged such that light that is not reflected from the inside of the integrating sphere is detected by the first light detecting device 212. Measurement. For example, the first light detecting device 212 can be configured such that only light that enters the light exit port 216 passing through the integrating sphere 213 due to reflection on the substrate 120 can be detected by the first light detecting device 212.

According to several embodiments, which can be combined with other embodiments described herein, the metrology configuration 200 can include at least three optical metrology devices 210, as exemplarily shown in FIG. The at least three optical metrology devices can be disposed at different heights of a substantially vertical line, and the substantially vertical lines are exemplarily labeled with reference numeral 222 in FIG. The at least three optical measuring devices can also be disposed at different heights on different substantially vertical lines, and the plurality of substantially vertical lines are, for example, parallel to the line labeled by reference numeral 222 in FIG. . By providing at least three optical measuring devices, several measurements of the substrate can be performed simultaneously. The measurement of different measuring devices can be compared to obtain information about the uniformity of the substrate. Thereby, a highly accurate measurement can be achieved at a plurality of selected positions of the substrate. Therefore, the characteristics of the processed substrate can be measured and monitored to confirm the high reproducibility of the processed substrate.

According to several embodiments, which can be combined with other embodiments described herein, the metrology configuration 200 includes at least one optical metrology device 210 for measuring vertical configurations At least one optical property of the large area substrate, the measurement configuration 200 is provided after the exit port 112 of the device 100 for processing a large area substrate, as exemplarily shown in FIG. By providing a metrology device at the exit of the device and then processing the large area substrate, the device for processing the large area substrate can be modified with a measurement configuration, as described herein in a simple manner.

According to several embodiments, which can be combined with other embodiments described herein, the apparatus for processing large area substrates is an in-line processing apparatus. A tandem processing apparatus for processing a large area substrate in accordance with embodiments described herein can include a series of cavities, that is, a cavity configuration 110 including at least one cavity. According to several embodiments, the at least one cavity of the cavity arrangement 110 includes a plurality of cavity walls having a plurality of openings, wherein the openings are configured to transmit a substantially vertical substrate through which the substrate passes. Thus, such openings may have the shape of a slit, particularly a vertical slit. According to several embodiments, which can be combined with other embodiments described herein, the openings of the at least one cavity can include locks that can be opened or closed.

According to several embodiments, which may be combined with other embodiments described herein, the at least one cavity of the cavity arrangement 110 may have a flange for connection to a vacuum system, such as a vacuum pump or the like. Thereby, the at least one cavity can be vented.

According to several embodiments, which can be combined with other embodiments described herein, the at least one cavity of the cavity configuration can be a cavity selected from the group consisting of a buffer chamber, heating A cavity, a transfer chamber, a cycle-time-adjusting chamber, a deposition chamber, a processing chamber, or the like.

According to several embodiments, which may be combined with other embodiments described herein, at least one cavity of the cavity configuration may be a processing chamber. According to the disclosure, a "processing chamber" can be understood as a cavity, and a processing device for processing a substrate is disposed in the cavity. Thus, a processing device in accordance with embodiments described herein can be understood to be any device for processing a substrate. For example, the processing device can be a deposition source for depositing a layer on a substrate. Thus, a processing chamber including a deposition source can be considered as a deposition chamber in the present disclosure. The deposition chamber may be a chemical vapor deposition (CVD) chamber or a physical vapor deposition (PVD) chamber.

According to several embodiments, which can be combined with other embodiments described herein, the processing device as a deposition source is provided as a sputtering target, such as a rotatable sputtering target, which can be used for PVD. In the cavity, the PVD cavity is taken, for example, from AKT ^® or from Applied Materials Gmbh & Co. KG, and AKT ^® is Applied Materials, Inc., located in Santa Clara, California. , a subsidiary of Santa Clara, California, Germany Applied Materials Ltd. is located in Alzenau, Germany. According to several embodiments, the deposition source and/or processing chamber used in the embodiments of the apparatus described herein may be a deposition source and/or a processing chamber, the processing chamber system being taken from AKT® and used in AKT Aristo PVD. In the system. However, it should be understood that the sputter target may have utility in other PVD cavities, and other PVD cavities include those configured to handle large area substrates produced by other manufacturers.

According to several embodiments, which can be combined with other embodiments described herein, the processing device can be configured to provide direct current (DC) sputtering, Pulse sputtering, or middle frequency (MF) sputtering. According to several embodiments, which can be combined with other embodiments described herein, intermediate frequency sputtering includes frequencies in the range of 5 kHz to 100 kHz, particularly in the range of 25 kHz to 50 kHz.

According to several embodiments, which can be combined with other embodiments described herein, an apparatus for processing a large area substrate can be adapted to use a sputtering technique, which is generally applied to the manufacture of a semiconductor, liquid crystal display (Liquid Crystal Display, In the thin film deposition process of LCD), Plasma Display Panel (PDP) and similar devices.

According to several embodiments, which can be combined with other embodiments described herein, the at least one cavity configured to be a cavity configuration of the deposition cavity can be configured for depositing material, the material being selectable from a low refractive index material a group consisting of a medium refractive index material and a high refractive index material. The low refractive index material is, for example, SiO ₂ or MgF, and the medium refractive index material is, for example, SiN, Al ₂ O ₃ , AlN, ITO, IZO, SiO _x N _y , AlO _x N _y , and the high refractive index material is, for example, Nb ₂ O _{5 .} , TiO ₂ , TaO ₂ , or other high refractive index materials.

Thus, in accordance with several embodiments that can be combined with other embodiments described herein, the target material can be selected from the group consisting of low refractive index materials, medium refractive index materials, and high refractive index materials. The low refractive index material is, for example, SiO ₂ or MgF, and the medium refractive index material is, for example, SiN, Al ₂ O ₃ , AlN, ITO, IZO, SiO _x N _y , AlO _x N _y , and the high refractive index material is, for example, Nb ₂ O _{5 .} , TiO ₂ , TaO ₂ , or other high refractive index materials.

According to several embodiments, which can be combined with other embodiments described herein, the target material is typically provided according to the material to be deposited on the substrate, or according to a predetermined The reaction gas in the treatment zone acts to provide a material that is subsequently deposited on the substrate after reaction with the reaction gas.

According to several embodiments, which can be combined with other embodiments described herein, two transmission paths can be provided such that the first substrate can catch up with the second substrate that has been processed. Thereby, the apparatus for processing a large-area substrate can be provided in such a manner that several substrates can be processed differently, successively, or simultaneously.

According to several embodiments, which can be combined with other embodiments described herein, a transport system for moving along a transport track can be provided at the bottom of a substantially vertically-configured substrate. The transport system can include a transport carrier for the substrate. As exemplarily shown in Figures 2 and 3, the transport carrier 131 can be configured as a frame structure for supporting the substrate 120, particularly for supporting the substrate in a vertically disposed state. Furthermore, the transport carrier can be configured in a number of sub-frames to support the substrate, wherein the secondary frame is surrounded by the bottom frame. 2 and 3 are schematic views of an exemplary embodiment of a transport carrier 131 for a substrate 120 that is substantially vertically disposed, the transport carrier 131 including a bottom frame 132 and a plurality of sub-frames 133. As can be seen in Figures 2 and 3, the sub-frames can differ in size and aspect ratio, wherein the dimensions of the bottom frame of the different transport carriers are essentially determined by at least one cavity of the cavity configuration. The size of the body.

According to several embodiments, which can be combined with other embodiments described herein, the secondary frame can be configured to support the 4.5th, 5th, 7.5th, 8.5th, and 10th generations as specifically mentioned herein. , 11th generation, or 12th generation substrate. Furthermore, the secondary frame can also be configured to have a size that is smaller than the size of the large-area substrate specifically mentioned herein. According to several combinations that can be combined with other embodiments described herein In an embodiment, a plurality of sub-frames having different sizes may be disposed in the bottom frame of the transport carrier. Thereby, it is possible to simultaneously process substrates of different sizes.

According to several embodiments, which can be combined with other embodiments described herein, a transmission system for a vertically disposed substrate can include a transmission element, such as a roller and/or a guiding element, for guiding the substrate along the transport path. Or transfer the carrier. For example, the guiding element can be a magnetic guiding element having a groove, for example two slits, through which the substrate can be transported. The guiding element may also include a bearing for linear movement such that switching from the first transmission track to the second transmission track is possible.

According to several embodiments, which can be combined with other embodiments described herein, the magnetic guiding element is configured to non-contact guide the substrate or transport carrier along the transport path. The non-contact guide can include lateral tolerances between the guide element and the substrate or transport carrier such that the lateral position of the substrate or transport carrier can be varied during the tolerance provided during transport. Thereby, the warping effect of the substrate may also occur. By using the measurement configuration described herein in an apparatus for processing a large area substrate in accordance with embodiments described herein, variations in lateral position or changes in substrate relative to the measurement configuration do not affect the substrate The accuracy of the measurement. That is, the measurement configuration described herein has the ability to compensate for warpage effects and/or changes in lateral position or changes in the substrate relative to the measurement configuration.

According to several embodiments, which can be combined with other embodiments described herein, the transmission element and/or the guiding element of the transmission system can be arranged on the upper and/or lower end of the substrate, in particular on the transport carrier for the substrate On the upper and / or lower end. The transport elements can be moved simultaneously for lateral transfer of the substrate within the cavity configuration or through the cavity configuration lose. The guiding element can also move simultaneously with the transmission element.

According to several embodiments, which can be combined with other embodiments described herein, the transmission element can include a driver for driving the transmission element. For example, the transport element can include a belt drive for driving rotation of the transport element to transport the substrate or carrier on the transport roller along the transport path. According to several embodiments, one or more of the drives, such as a belt drive, can be driven by a motor.

In accordance with embodiments described herein, an apparatus for processing a large area substrate includes an improved application of the processing chamber and allows the substrate to be transported into the processing system in a continuous or similar continuous manner. According to an exemplary embodiment that can be combined with other embodiments described herein, an apparatus for processing a large area substrate includes an empty load-lock chamber for inserting a substrate into the apparatus. The empty loading/unloading chamber is configurable to change the internal pressure, the internal pressure is changed from atmospheric pressure to vacuum or vice versa, and the vacuum is, for example, a pressure of 10 mbar or less.

According to an exemplary embodiment that can be combined with other embodiments described herein, an apparatus for processing a large area substrate includes an exit loading/unloading cavity for removing the substrate out of the apparatus. The outlet loading/unloading chamber is configurable to change the internal pressure, the internal pressure is changed from atmospheric pressure to vacuum or vice versa, and the vacuum is, for example, a pressure of 10 mbar or less. According to several embodiments, the outlet loading/unloading cavity includes an outlet port 112. Thus, after transporting through the cavity configuration of the device, the substrate can exit the device at the exit port 112, as exemplarily shown in FIG.

According to several embodiments described herein, the cavity configuration can include at least one vacuum chamber. The at least one vacuum chamber is configurable for use at 10 mbar or less Pressure transfer or handling of the substrate. Thus, the empty loading/unloading cavity is opened before the vacuum valve between the empty loading/unloading chamber and the adjacent downstream cavity is opened to further transport the substrate into the adjacent cavity. Configurable for exhaust. Therefore, the outlet is loaded before the vacuum valve between the empty outlet loading/unloading chamber and the adjacent upstream chamber is opened to further transfer the substrate to the outlet loading/unloading chamber. The loading chamber is configurable for venting.

By providing an apparatus for processing a large area substrate in accordance with embodiments described herein, the characteristics of the processed substrate can be measured and monitored to ensure a high reproducible quality of the processed substrate. Thus, for the apparatus described herein, equipment for processing large-area substrates is provided to detect, for example, non-uniformities in the structure or composition of the coating on the substrate or substrate due to process tolerances. . Thereby, the low quality based panels can be discerned for the equipment described herein. Moreover, with the disclosed apparatus, processing errors can be detected at an early stage so that processing can be stopped to avoid manufacturing defective products. As a result, the overall process cost can be minimized.

According to several embodiments, which can be combined with other embodiments described herein, the first light detecting device can include the ability to process visible radiation. According to several embodiments, the first light detecting device can be adapted to process radiation in an extra-optical range, such as infrared, ultraviolet radiation. For example, the first photodetecting device can be a photo sensor, which can be adapted to process in the visible radiation range of 380-780 nm and/or the infrared radiation range of 780 nm to 3000 nm and/or 200 nm. Radiation in the ultraviolet radiation range up to 380 nm. For example, A light detecting device can be a photo sensor or a charge coupled device (CCD) sensor. The first photodetecting device can be provided for obtaining measurement data and reference materials. Furthermore, the first photodetecting device can include a signal exit port, and the signal exit port can be connected to a data processing or data analyzing unit (not shown in the drawings).

According to several embodiments, the first photodetecting device can be connected to the data processing or data analysis unit via a cable or wireless connection. The data processing or data analysis unit can be adapted to detect and analyze the signal of the first photodetecting device. If any of the properties of the substrate are measured and defined as unusual, the data processing or data analysis unit can detect the change and trigger a reaction, such as stopping the processing of the substrate.

According to several embodiments, which can be combined with other embodiments described herein, the at least one optical property of the substrate measured by the first photodetecting device of the at least one optical measuring device comprises a reflectivity from the substrate .

Referring to Figures 5 and 6, for example, the influence of the warpage caused by gravity on the vertically disposed substrate is analyzed. Since the warpage can be regarded as the substrate tilt or the movement of the substrate in the original direction with respect to the substrate, the influence of the tilt or movement of the substrate can be separately analyzed. Therefore, the influence of the movement of the substrate is analyzed with reference to Fig. 5 as compared with the reference direction of the substrate as shown in Fig. 4. Furthermore, the influence of the tilt of the substrate with respect to the reference direction of the substrate as in Fig. 4 is evaluated with reference to Fig. 6.

Figure 5 is a cross-sectional view showing an embodiment of the optical measuring device according to Figure 4, wherein the substrate and optical measuring device are as shown in Figure 4 In relative position, the relative position of the substrate is laterally moved relative to the optical measuring device. As shown in Fig. 5, the lateral movement of the substrate 120 is indicated by ΔD. As shown in FIG. 5, when the substrate is moved by the distance ΔD, the position of the origin P of the light beam as shown in FIG. 4 is reflected by the first photodetecting device after being reflected from the substrate 120. The position of the origin P of the detected beam is found to have moved away from the first photodetecting device 212. As shown in Fig. 5, in the case where the distance (D1 + ΔD) between the light exit port 216 of the integrating sphere 213 and the substrate 120 is increased, the angle (β + Δβ) of the light beam is increased. Therefore, the size of the light exit port 216 and the position and size of the first light detecting device 212 determine the maximum distance between the substrate and the light exit port 216. The light reflected from the substrate can be detected by the first light detecting device 212. . In order to measure the at least one optical property of the substrate, the substrate is illuminated by diffuse illumination, and the light that impinges on the substrate has the same intensity at the illuminated portion of the substrate. Therefore, the accuracy of the at least one optical property of the measured substrate is independent of the substrate and the measurement configuration described herein, particularly a distance of 30 mm within a tolerance of ±25 mm, particularly within a tolerance of ±20 mm. More especially in the tolerance of ±15mm.

Figure 6 is a cross-sectional view showing an embodiment of the optical measuring apparatus according to Fig. 4, wherein the relative positions of the substrates are inclined as compared with the positions of the substrates as shown in Fig. 4. In Fig. 6, the inclination of the substrate 120 is indicated by δ. As shown in FIG. 6, when the substrate is tilted by an angle δ, the position of the origin P of the light beam in FIG. 4 is detected by the first photodetecting device 212 after being reflected from the substrate 120. The position of the origin P of the beam is found to have moved away from the first photodetecting device 212. Furthermore, as shown in Figure 6, the angle of the beam (β + δ) can be based on the tilt of the substrate The angle of inclination δ varies. Therefore, the size of the light exit port 216 and the position and size of the first photodetecting device 212 determine the maximum tilt of the substrate, and the light reflected from the substrate can be detected by the first photo detecting device 212. In order to measure the at least one optical property of the substrate, the substrate is illuminated by diffuse illumination, and the light that impinges on the substrate has the same intensity at the illuminated portion of the substrate. Therefore, the accuracy of the at least one optical property of the measured substrate is independent of the angle δ of the tilt of the substrate.

Referring to the above summary of Figures 5 and 6, for example, the effect of substrate warpage on a vertically disposed substrate due to gravity on the measurement accuracy of the measurement configuration as described herein can be substantially eliminated. Thus, an apparatus for processing a large area substrate as described herein has the ability to measure at least one optical property of a substantially large area substrate that is substantially vertically disposed. In particular, an apparatus for processing a large area substrate in accordance with embodiments described herein is suitable for measuring at least one optical property of a substantially large-area moving substrate, particularly at a transmission speed of at least 1 m/min. The moving substrate, in particular at least 20 m/min, more particularly at least 35 m/min, for example 50 m/min.

Furthermore, in accordance with embodiments described herein, by providing an apparatus for processing a large area substrate, at least one optical property of the substrate can be as high as 100 mm between the substrate and the measurement configuration and the substrate tilts up to ±2 High-accuracy measurements are made at °°, and the substrate tilts up to ±2°, for example due to warpage of large-area substrates.

According to several embodiments, which can be combined with other embodiments described herein, the at least one optical measuring device 210 further includes a second photo detecting device 215 for measuring at least the substantially large-area substrate of the substantially vertical configuration. An optical property. As shown in Figure 7 According to the exemplary embodiment, the second photodetecting device 215 can be disposed on the other side of the substrate 120 with respect to the light emitting device 211, particularly with respect to the light exit port 216 of the integrating sphere, and Especially on the second surface 122 side of the substrate 120. According to several embodiments, the second photodetecting device 215 is disposed at a distance D2 from the substantially vertically disposed substrate 120. The distance D2 is related to the second surface 122 of the substrate 120, within a tolerance of ±25 mm, D2=30 mm. , especially within tolerances of ±20 mm, and more particularly within ±15 mm tolerance.

According to several embodiments, which can be combined with other embodiments described herein, the second light detecting device can include the ability to process visible radiation. The second light detecting device can be adapted to process radiation in a particular range of light, such as infrared, ultraviolet radiation. For example, the second photodetecting device can be a photo sensor, and the photo sensor can be adapted to process in the visible radiation range of 380-780 nm and/or the infrared radiation range of 780 nm to 3000 nm and/or 200 nm. Radiation in the ultraviolet radiation range up to 380 nm. The second photodetecting device can be a photoinductor or a CCD sensor. The second photodetecting device can be provided for obtaining measurement data and obtaining reference materials. The second photodetecting device can include a signal exit port, and the signal exit port can be connected to a data processing or data analysis unit (not shown in the drawings).

According to several embodiments, which can be combined with other embodiments described herein, the at least one optical property of the substrate measured by the second photodetecting device of the at least one optical measuring device comprises a transmittance through the substrate . It is feasible to measure the transmittance and reflectivity of the substrate by providing a measurement configuration having the first photodetecting device and the second photodetecting device. Thereby, more information about the properties of the substrate can be obtained.

According to several embodiments, which can be combined with other embodiments described herein, the second photodetecting device can be coupled to the data processing or data analysis unit via a cable or wireless connection. The data processing or data analysis unit can be adapted to detect and analyze the signal of the second photodetecting device. If any of the properties of the substrate are measured and defined as unusual, the data processing or data analysis unit can detect the change and initiate a reaction, such as stopping the processing of the substrate.

According to several embodiments, which can be combined with other embodiments described herein, the distance D1 between the integrating sphere 213 of the illumination device 211 and the first surface 121 of the substrate 120 and/or the second photodetecting device 215 and The smaller the distance D2 between the second surfaces 122 of the substrate 120, the more suitable the second surface 122 is on the opposite side of the first surface of the substrate. According to several embodiments, the distance D1 and the distance D2 are selected such that the substrate is movable in the transport direction relative to the illumination device 211 and/or unobstructed relative to the at least one optical measurement device 210.

According to several embodiments, which can be combined with other embodiments described herein, the measurement arrangement 200 further includes at least one light trap 220 configured and arranged to capture light that penetrates the substrate. As exemplarily shown in FIG. 8, the at least one light shield 220 is geometrically configured such that all incident light illuminates an absorption zone 221. For example, the light block can be configured such that an incident beam having an intensity I ₀ is reflected on at least 5 surfaces before being reflected out of the light block. For example, the absorbing region 221 where light may be reflected in the light block may include black glass that reflects 5% of the incident light. Therefore, after five reflections, the light intensity I _out of the light that may reflect the light block can be calculated to be 0.05 ⁵ . I ₀ = 3.125 □ 10 ^-7 . I ₀ , which is equivalent to zero.

According to several embodiments, which can be combined with other embodiments described herein, the at least one optical stop 220, and in particular the absorbing region 221, is configured to absorb all incident light throughout all of the measured wavelengths, for example The wavelength in the visible radiation range of 380-780 nm and/or the infrared radiation range of 780 nm to 3000 nm and/or the ultraviolet radiation range of 200 nm to 380 nm. According to several embodiments, the at least one light barrier 220 is disposed at a distance D3 from the substantially vertically disposed substrate 120, particularly with respect to the second surface 122 of the substrate, and the distance D3 is from the second surface 122 of the substrate 120. Relevant, within a tolerance of ±25 mm, D3 = 30 mm, especially within a tolerance of ± 20 mm, and more particularly within a tolerance of ± 15 mm.

Although not explicitly shown, in accordance with the embodiments of the embodiments described herein, the second light detecting device 215 can be disposed in the at least one light barrier 220. According to several embodiments, the height of the at least one light barrier 220 is at least 50%, in particular at least 70%, more particularly at least 85%, of the height of the substantially vertical configuration of the large-area substrate, such as the at least one light barrier. The height may be substantially the same as the height of the vertically disposed large area substrate, or the height of the at least one light stop may be the same as the height of the transport member having the size of the large area substrate as described herein. Thereby, the light barrier can be statically configured relative to the moving illumination device, and the moving illumination device can be part of the measurement device described herein. Therefore, the light blocking system is arranged and arranged such that the light emitted from the moving light emitting device can be captured by the light blocking device, and the moving light emitting device moves, for example, along a substantially vertical orbit, and the optical blocking system is located in the entire movement of the light emitting device. Above the track. Thereby, any reflection from the back side of the surface on which the reflection is measured can be excluded.

According to the embodiment described herein, by providing at least one light block, The reflection of the substrate can be measured without distortion, the distortion being derived from parasitic reflections rather than from the surface being measured. Moreover, according to several embodiments, the size of the at least one optical stop is adjusted such that providing a single optical stop is sufficient to substantially exclude stray light reflections at the height of the substrate on which the measurement is performed.

In Fig. 9, a perspective view of an apparatus for processing a large area substrate in accordance with an embodiment, which may be combined with other embodiments described herein, in other embodiments described herein, Configuration 200 is provided in the cavity configuration 110, for example, the measurement configuration 200 is provided in a vacuum chamber of the cavity configuration. Furthermore, in accordance with the embodiments described herein, FIG. 9 is illustrative of a processing device 230 that provides, for example, a deposition source as a sputtering target.

According to several embodiments, which can be combined with other embodiments described herein, the at least one optical metrology device 210 can be configured to be movable, substantially along a direction of transmission relative to a substantially large substrate disposed substantially vertically. Vertical direction. Thereby, measurements along a number of different positions of the axis of movement of the at least one optical metrology device 210 can be performed, such as along line 222 in FIG. The at least one first movable measuring device can be coupled to the track for supporting movement of the manually operated at least one optical measuring device.

According to several embodiments, which can be combined with other embodiments described herein, an actuator for moving the at least one first movable measuring device along a track, such as a linear track, can be provided. The actuator can be operated by energy in the form of current, liquid pressure, or gas pressure, and the actuator converts energy into action. According to some embodiments, the actuator for moving the at least one optical measuring device may be electric Electrical motor, linear motor, pneumatic actuator, hydraulic actuator or piezoelectric actuator.

In Fig. 10, an embodiment of a method for measuring at least one optical property of a substantially vertically disposed large area substrate in accordance with embodiments described herein is illustrated. According to an embodiment of a method for measuring at least one optical property of a substantially large-area substrate that is substantially vertically disposed, the method includes: modulating a large-area substrate disposed substantially vertically with respect to the transmission direction 301 in the transmission direction At least one optical property of the large-area substrate that is substantially vertically disposed and the large-area substrate that is substantially vertically disposed.

According to an embodiment of a method for measuring at least one optical property of a substantially vertically disposed large-area substrate, the large-area substrate disposed substantially perpendicular to the measurement configuration transmission 301 comprises: at a transmission speed of at least 1 m/min The measurement configuration moves a substantially large-area substrate of substantially vertical configuration, in particular a transmission speed of at least 20 m/min, more particularly at least 35 m/min, for example 50 m/min, this embodiment can be combined with the method described herein Other embodiments.

In accordance with an embodiment of a method for measuring at least one optical property of a substantially vertically disposed large area substrate, the transmission system described herein is for transmitting a large area substrate that is substantially vertically disposed, this embodiment may be incorporated Other embodiments of the method described.

In accordance with a method embodiment for measuring at least one optical property of a substantially vertically disposed large area substrate, the illumination device described herein is applied to a large area substrate that is substantially vertically disposed in a diffuse illumination 302. Embodiments can be combined with this Other embodiments of the method described.

According to an embodiment of a method for measuring at least one optical property of a substantially vertically disposed large-area substrate, the at least one optical property of the substantially large-area substrate that is measured substantially vertically may be transmitted substantially relative to the measurement configuration Executed during the vertical configuration of the large area substrate, this embodiment can incorporate other embodiments of the methods described herein. Measuring at least one optical property of the substantially planarly disposed large area substrate can be performed or continuously performed at selected time segments.

According to an embodiment of a method for measuring at least one optical property of a substantially vertically disposed large-area substrate, measuring the at least one optical property of the substantially-area substantially large-area substrate may include using the amount described herein Measure configuration 200, this embodiment can incorporate other embodiments of the methods described herein.

According to an embodiment of a method for measuring at least one optical property of a substantially vertically disposed large-area substrate, measuring the at least one optical property of the substantially-area substantially large-area substrate comprises moving the at least one optical measuring device The direction of transmission of a large area substrate perpendicular to the vertical configuration.

According to several embodiments described herein, a method for measuring at least one optical property of a substantially large-area substrate of a substantially vertical configuration can be performed by a computer program, a software, a computer software product, and a plurality of controllers related to each other. Executing, a plurality of controllers having a relationship may have a central processing unit (CPU), a memory, a user interface, and input and output means, and the input and output means are performed with corresponding components of a device for processing a large-area substrate. communication.

In summary, although the invention has been disclosed above in the preferred embodiments, It is not intended to limit the invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

100‧‧‧ Equipment

110‧‧‧ cavity configuration

112‧‧‧Export

120‧‧‧ Large area substrate

131‧‧‧Transport carrier

200‧‧‧Measurement configuration

210‧‧‧Optical measuring device

220‧‧‧Light block

222‧‧‧ line

Claims (20)

A device (100) for processing a large area substrate (120), comprising: a cavity configuration (110) for transporting the large area substrate (120) therethrough in a substantially vertical configuration, wherein The cavity arrangement (110) includes at least one cavity, a processing device and an outlet port (112) for processing the large-area substrate (120) vertically disposed, the outlet port (112) being used for substantially a large-area substrate (120) vertically disposed; a transmission system for transmitting the substantially large-area substrate (120) through the cavity configuration (110); and a measurement configuration (200), including at least An optical measuring device (210), wherein the at least one optical measuring device (210) comprises a light emitting device (211) and a first light detecting device (212), wherein the light emitting device (211) is configured to emit diffused light The first photodetecting device (212) is configured to measure at least one optical property of the substantially large-area substrate disposed substantially vertically. The device (100) of claim 1, wherein the illumination device comprises an integrating sphere (213) and a light source (214) that emits light into the integrating sphere (213). The device (100) of claim 1, wherein the at least one optical measuring device (210) further comprises a second photodetecting device (215) for measuring the large vertical configuration The at least one optical property of the area substrate. The device (100) of claim 2, wherein the at least one optical measuring device (210) further comprises a second photodetecting device (215) for measuring the substance The at least one optical property of the large area substrate disposed vertically. The device (100) of claim 3, wherein at least one of the first photodetecting device (212) and the second photodetecting device (215) is configured to be substantially vertically disposed Large-area substrates are separated by a distance of 30 mm within a tolerance of ±25 mm. The device (100) of claim 3, wherein at least one of the first photodetecting device (212) and the second photodetecting device (215) is configured to be substantially vertically disposed Large-area substrates are separated by a distance of 30 mm within a tolerance of ±20 mm. The apparatus (100) of any one of claims 1 to 6, wherein the at least one optical property of the substantially large-area substrate disposed substantially vertically comprises one of the large-area substrates from a substantially vertical configuration. Reflectance, and transmittance of one of the large-area substrates disposed substantially vertically. The device (100) of any one of claims 1 to 6, wherein the first photodetecting device (212) is configured and arranged such that no direct light from the light source (214) is The first photodetecting device (212) detects. The device (100) according to any one of the preceding claims, wherein the measuring configuration (200) further comprises at least one light block (220), the at least one light block is configured and arranged, The light that penetrates the large-area substrate disposed substantially vertically is taken. The device (100) of claim 9, wherein the second photodetecting device (215) is disposed in the at least one optical block (220). The device (100) of claim 9, wherein the at least one The height of the light block (220) is at least 50% of the height of the large area substrate that is substantially vertically disposed. The apparatus (100) according to any one of claims 1 to 6, wherein the at least one optical measuring device (210) is substantially opposite to a substantially vertical configuration of the large-area substrate. Movable. The apparatus (100) according to any one of claims 1 to 6, wherein the measuring configuration is provided after the outlet port (112) of the device (100) for processing the large-area substrate (120). The apparatus (100) of any one of claims 1 to 6, wherein the measurement configuration (200) is provided in the cavity configuration (110), particularly in the cavity configuration Vacuum chamber. The apparatus (100) of any one of claims 1 to 6, wherein the measurement configuration (200) is provided in a vacuum chamber of the cavity configuration. The apparatus (100) according to any one of claims 1 to 6, wherein the measurement configuration (200) is allowed to be used for warping of a substrate, the substrate warpage producing an angular error of ±2° . A method for measuring at least one optical property of a substantially large-area substantially large-area substrate, wherein the method comprises: a) transmitting (301) the substantially vertical configuration in a transmission direction relative to a measurement configuration a large area substrate; b) illuminating (302) the substantially vertical configuration of the large area substrate with diffused light; c) measuring (303) the at least one optical property of the substantially vertically disposed large area substrate. The method of claim 17, wherein transmitting (301) the substantially vertical configuration of the large-area substrate relative to the measurement configuration comprises moving the transmission at a transmission speed of at least 1 m/min relative to the measurement configuration A large-area substrate that is disposed substantially vertically. The method of claim 17, wherein transmitting (301) the substantially vertically-configured large-area substrate relative to the measurement configuration comprises moving the transmission at a transmission speed of at least 20 m/min relative to the measurement configuration A large-area substrate that is disposed substantially vertically. The method of measuring (303) the at least one optical property of the substantially vertically disposed large-area substrate comprises moving at least one optical measuring device perpendicular to the substantially vertical configuration, as in the method of claim 17-19 The direction of transmission of the large area substrate.