TW201519329A - Electronic device sealing method, electronic device package production method, and sealing sheet - Google Patents

Electronic device sealing method, electronic device package production method, and sealing sheet Download PDF

Info

Publication number
TW201519329A
TW201519329A TW103121200A TW103121200A TW201519329A TW 201519329 A TW201519329 A TW 201519329A TW 103121200 A TW103121200 A TW 103121200A TW 103121200 A TW103121200 A TW 103121200A TW 201519329 A TW201519329 A TW 201519329A
Authority
TW
Taiwan
Prior art keywords
sealing sheet
release film
electronic component
sealing
substrate
Prior art date
Application number
TW103121200A
Other languages
Chinese (zh)
Inventor
Eiji Toyoda
Tsuyoshi Ishizaka
Kojiro Kameyama
yusaku Shimizu
Jun Ishii
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of TW201519329A publication Critical patent/TW201519329A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Abstract

Provided is an electronic device sealing method capable of preventing a sealing sheet from protruding while allowing surface reliefs to be embedded satisfactorily. The first invention relates to an electronic device sealing method comprising: the step of disposing a sealing sheet and a release film in this order over an electronic device disposed on a substrate; the step of covering the substrate, the electronic device, and the sealing sheet with the release film under a reduced pressure atmosphere to form a sealed space sealed by the release film; and the step of using a difference in pressure generated by making the pressure outside the sealed space higher than inside the sealed space to seal the electronic device with the sealing sheet.

Description

電子元件之密封方法、電子元件封裝體之製造方法及密封片 Sealing method of electronic component, manufacturing method of electronic component package, and sealing sheet 技術領域 Technical field

本發明係有關於電子元件之密封方法、電子元件封裝體之製造方法及密封片。 The present invention relates to a method of sealing an electronic component, a method of manufacturing the electronic component package, and a sealing sheet.

背景技術 Background technique

作為電子元件之密封方法，藉由密封片密封配置在基板上之電子元件是習知的。 As a method of sealing an electronic component, it is known to seal an electronic component disposed on a substrate by a sealing sheet.

專利文獻1揭示在真空狀態之真空腔室內，以脫模薄膜覆蓋依序配置基板、電子元件及加熱軟化後之密封片的積層體，且形成收容基板、電子元件及密封片之真空密閉空間後，將大氣壓以上之氣體導入腔室內，使密封片密接在電子元件及基板上，以密封電子元件之方法。 Patent Document 1 discloses that a laminated body in which a substrate, an electronic component, and a heat-softened sealing sheet are sequentially disposed in a vacuum chamber in a vacuum state is covered with a release film, and a vacuum sealed space for accommodating the substrate, the electronic component, and the sealing sheet is formed. A method in which a gas above atmospheric pressure is introduced into a chamber to closely seal the sealing sheet to the electronic component and the substrate to seal the electronic component.

先前技術文獻 Prior technical literature 專利文獻 Patent literature

專利文獻1：日本專利特許第5189194號公報 Patent Document 1: Japanese Patent No. 5189194

發明概要 Summary of invention

專利文獻1記載之密封方法可均一地加壓電子元件等密封對象。但是，經加熱而軟化之密封片會由基板露出(密封片露出至密封對象區域外)。又，密封片無法追隨以電子元件為要件之凹凸，而有無法填埋凹凸之情形。 The sealing method described in Patent Document 1 can uniformly press a sealing object such as an electronic component. However, the sealing sheet softened by heating is exposed from the substrate (the sealing sheet is exposed to the outside of the sealing target region). Further, the sealing sheet cannot follow the irregularities of the electronic component as the main component, and there is a case where the unevenness cannot be filled.

本發明之目的在於解決前述課題，提供一種可防止密封片露出且可良好地填埋凹凸之電子元件之密封方法、電子元件封裝體之製造方法及密封片。 An object of the present invention is to provide a sealing method for an electronic component which can prevent the sealing sheet from being exposed and which can be well filled with irregularities, a method for producing the electronic component package, and a sealing sheet.

第1本發明係有關於一種電子元件之密封方法，其包含以下步驟：推壓具備附元件之基板、密封片及脫模薄膜之積層體的周邊部在與基板連接之平台上，藉此形成具備平台及脫模薄膜之密閉容器，又，前述附元件之基板係具備基板及配置在基板上之電子元件者，前述密封片係配置在附元件之基板上者，前述脫模薄膜係具備與密封片連接之中央部及配置在中央部周邊之周邊部者；及使密閉容器外部之壓力比密閉容器內部之壓力高，以藉密封片覆蓋電子元件。 A first aspect of the invention relates to a method of sealing an electronic component, comprising the steps of: pressing a peripheral portion of a laminate having a substrate, a sealing sheet, and a release film with a component on a platform connected to the substrate, thereby forming a sealed container having a stage and a release film, wherein the substrate of the component is provided with a substrate and an electronic component disposed on the substrate, and the sealing sheet is disposed on a substrate of the component, and the release film is provided with The central portion of the sealing piece is connected to the peripheral portion of the periphery of the central portion; and the pressure outside the sealed container is higher than the pressure inside the sealed container to cover the electronic component with the sealing sheet.

第1本發明之密封方法係利用收容基板、電子元件及密封片之密閉空間內外之壓力差，密封電子元件。第1本發明之密封方法例如可使用日本專利特許第5189194號公報記載之真空加熱接合裝置。 In the sealing method according to the first aspect of the present invention, the electronic component is sealed by a pressure difference between the inside and the outside of the sealed space in which the substrate, the electronic component, and the sealing sheet are housed. In the sealing method of the first aspect of the invention, for example, a vacuum heating bonding apparatus described in Japanese Patent No. 5189194 can be used.

第1本發明之密封方法由於使用無機填充劑之含量為60體積%以上、顯示最低複數黏度η*之溫度為100至 150℃且最低複數黏度η*為30Pa．s以上的密封片，故可防止密封片露出。又，由於使用無機填充劑之含量為90體積%以下且最低複數黏度η*為3000Pa．s以下的密封片，故可良好地填埋凹凸。 In the sealing method according to the first aspect of the present invention, the content of the inorganic filler is 60% by volume or more, and the temperature at which the lowest complex viscosity η* is displayed is 100 to 150 ° C and the lowest complex viscosity η * is 30Pa. The sealing sheet of s or more prevents the sealing sheet from being exposed. Further, since the content of the inorganic filler is 90% by volume or less and the lowest complex viscosity η* is 3000 Pa. Since the sealing sheet is s or less, the unevenness can be well filled.

前述脫模薄膜於常溫下的拉伸斷裂伸長率宜為30至300%。因此，可對基板上之電子元件之凹凸追隨性良好地進行密封。 The tensile elongation at break of the release film at normal temperature is preferably from 30 to 300%. Therefore, it is possible to seal the unevenness of the electronic component on the substrate with good adhesion.

前述密封片與前述脫模薄膜之密接力宜為0.1N/20mm以下。因此，可由密封片良好地剝離脫模薄膜。 The adhesion between the sealing sheet and the release film is preferably 0.1 N/20 mm or less. Therefore, the release film can be favorably peeled off by the sealing sheet.

第1本發明之密封方法宜更包含一以下步驟：在減壓環境下在附元件之基板上配置附密封片之脫模薄膜，藉此形成積層體，且該附密封片之脫模薄膜係具備脫模薄膜及積層在脫模薄膜上之密封片者。 The sealing method of the first aspect of the present invention preferably further comprises the step of disposing a release film with a sealing sheet on the substrate of the component under a reduced pressure environment, thereby forming a laminate, and the release film of the sealing sheet is A release film and a sealing sheet laminated on the release film.

由於在減壓環境下使密封片與電子元件接觸，故可防止空孔進入密封片與電子元件之間，及防止空孔進入密封片與基板之間。連續密封電子元件封裝體時，真空熱加壓裝置內變高溫且空孔容易進入，但是在本步驟中，可防止空孔進入，因此可連續運轉，且可提高生產性。 Since the sealing sheet is brought into contact with the electronic component in a reduced pressure environment, the void can be prevented from entering between the sealing sheet and the electronic component, and the void can be prevented from entering between the sealing sheet and the substrate. When the electronic component package is continuously sealed, the vacuum heat pressurizing device becomes high in temperature and the holes are easily entered. However, in this step, the holes can be prevented from entering, so that continuous operation can be performed and productivity can be improved.

又，第1本發明又有關於一種電子元件封裝體之製造方法，其包含以下步驟：推壓積層體之周邊部在與基板連接之平台上，藉此形成具備平台及脫模薄膜之密閉容器；及，使密閉容器外部之壓力比密閉容器內部之壓力高，以藉密封片覆蓋電子元件。 Moreover, the first aspect of the invention relates to a method of manufacturing an electronic component package, comprising the steps of: pressing a peripheral portion of a laminated body on a platform connected to a substrate, thereby forming a closed container having a platform and a release film; And, the pressure outside the sealed container is higher than the pressure inside the sealed container to cover the electronic component by the sealing sheet.

又，第1本發明又有關於一種供電子元件之密封 方法使用之密封片，且該電子元件之密封方法包含以下步驟：推壓積層體之周邊部在與基板連接之平台上，藉此形成具備平台及脫模薄膜之密閉容器；及，使密閉容器外部之壓力比密閉容器內部之壓力高，以藉密封片覆蓋電子元件。第1本發明之密封片含有無機填充劑，且無機填充劑之含量係60至90體積%。第1本發明之密封片按升溫速度10℃/分、測量頻率1Hz及應變5%測量下顯示最低複數黏度η*的溫度係100至150℃，且最低複數黏度η*係30至3000Pa．s。 Moreover, the first invention relates to a sealing for an electronic component The sealing sheet used in the method, and the method for sealing the electronic component comprises the steps of: pressing a peripheral portion of the laminated body on a platform connected to the substrate, thereby forming a sealed container having a platform and a release film; and, forming the closed container The external pressure is higher than the pressure inside the hermetic container to cover the electronic components with a sealing sheet. The sealing sheet of the first aspect of the invention contains an inorganic filler, and the content of the inorganic filler is 60 to 90% by volume. The sealing sheet of the first invention has a temperature of 100 ° C to 150 ° C at a temperature rise rate of 10 ° C / min, a measurement frequency of 1 Hz and a strain of 5%, and a minimum complex viscosity η * is 30 to 3000 Pa. s.

第2本發明係有關於一種電子元件之密封方法，其包含以下步驟：推壓具備元件暫時固定體、密封片及脫模薄膜之積層構造體的周邊部在與載體連接之平台上，藉此形成具備平台及脫模薄膜之密閉容器，又，前述元件暫時固定體係具備載體、配置在載體上之黏著劑及配置在黏著劑上之電子元件者，前述密封片係配置在元件暫時固定體上者，前述脫模薄膜係具備與密封片連接之中央部及配置在中央部周邊之周邊部者；及使密閉容器外部之壓力比密閉容器內部之壓力高，以藉密封片覆蓋電子元件。 According to a second aspect of the invention, there is provided a method of sealing an electronic component, comprising: pressing a peripheral portion of a laminated structure including a temporary component of a component, a sealing sheet, and a release film on a platform connected to the carrier, whereby Forming a sealed container having a platform and a release film, wherein the component temporary fixing system includes a carrier, an adhesive disposed on the carrier, and an electronic component disposed on the adhesive, wherein the sealing sheet is disposed on the component temporary fixing body The release film has a central portion that is connected to the sealing sheet and a peripheral portion that is disposed around the center portion; and the pressure outside the sealed container is higher than the pressure inside the sealed container to cover the electronic component with the sealing sheet.

第2本發明之密封方法係利用密閉容器內外之壓力差，覆蓋電子元件。第2本發明之密封方法例如可使用日本專利特許第5189194號公報記載之真空加熱接合裝置。 The sealing method according to the second aspect of the present invention covers the electronic component by utilizing a pressure difference between the inside and the outside of the sealed container. In the sealing method of the second aspect of the invention, for example, a vacuum heating bonding apparatus described in Japanese Patent No. 5189194 can be used.

第2本發明之密封方法由於使用無機填充劑之含 量為60體積%以上、顯示最低複數黏度η*之溫度為100至150℃且最低複數黏度η*為30Pa．s以上的密封片，故可防止密封片露出。又，由於使用無機填充劑之含量為90體積%以下且最低複數黏度η*為3000Pa．s以下的密封片，故可良好地填埋凹凸。 The sealing method of the second invention is based on the use of an inorganic filler The amount is 60% by volume or more, the temperature showing the lowest complex viscosity η* is 100 to 150 ° C and the lowest complex viscosity η* is 30 Pa. The sealing sheet of s or more prevents the sealing sheet from being exposed. Further, since the content of the inorganic filler is 90% by volume or less and the lowest complex viscosity η* is 3000 Pa. Since the sealing sheet is s or less, the unevenness can be well filled.

第2本發明之密封方法亦可更包含一以下步驟：在減壓環境下在元件暫時固定體上配置附密封片之脫模薄膜，藉此形成積層構造體，且該附密封片之脫模薄膜係具備脫模薄膜及積層在脫模薄膜上之密封片者。由於在減壓環境下使密封片與電子元件接觸，故可防止空孔進入密封片與電子元件之間，及防止空孔進入密封片與黏著劑之間。 The sealing method according to the second aspect of the present invention may further include a step of disposing a release film with a sealing sheet on the temporary fixing body of the element under a reduced pressure environment, thereby forming a laminated structure, and releasing the sealing sheet The film is provided with a release film and a sealing sheet laminated on the release film. Since the sealing sheet is brought into contact with the electronic component in a reduced pressure environment, the void can be prevented from entering between the sealing sheet and the electronic component, and the void can be prevented from entering between the sealing sheet and the adhesive.

又，第2本發明又有關於一種電子元件封裝體之製造方法，其包含以下步驟：推壓積層構造體之周邊部在與載體連接之平台上，藉此形成具備平台及脫模薄膜之密閉容器；及，使密閉容器外部之壓力比密閉容器內部之壓力高，以藉密封片覆蓋電子元件。 Moreover, the second aspect of the invention relates to a method of manufacturing an electronic component package, comprising the steps of: pressing a peripheral portion of the laminated structure on a platform connected to the carrier, thereby forming a seal having a platform and a release film; The container; and the pressure outside the sealed container is higher than the pressure inside the sealed container to cover the electronic component by the sealing sheet.

又，第2本發明又有關於一種供電子元件之密封方法使用之密封片，且該電子元件之密封方法包含以下步驟：推壓積層構造體之周邊部在與載體連接之平台上，藉此形成具備平台及脫模薄膜之密閉容器；及，使密閉容器外部之壓力比密閉容器內部之壓力高，以藉密封片覆蓋電子元件。第2本發明之密封片含有無機填充劑，且無機填充劑之含量係60至90體積%。第2本發明之密封片按升溫速度10℃/分、測量頻率1Hz及應變5%測量下顯示最低複數黏 度η*的溫度係100至150℃，且最低複數黏度η*係30至3000Pa．s。 Further, the second invention relates to a sealing sheet for use in a sealing method for an electronic component, and the method of sealing the electronic component includes the steps of: pressing a peripheral portion of the laminated structure on a platform connected to the carrier, whereby Forming a sealed container having a platform and a release film; and making the pressure outside the sealed container higher than the pressure inside the sealed container to cover the electronic component with the sealing sheet. The sealing sheet of the second aspect of the invention contains an inorganic filler, and the content of the inorganic filler is 60 to 90% by volume. The sealing sheet of the second invention shows the lowest complex viscosity under the measurement of the heating rate of 10 ° C / min, the measuring frequency of 1 Hz and the strain of 5%. The temperature of η* is 100 to 150 ° C, and the lowest complex viscosity η * is 30 to 3000 Pa. s.

1‧‧‧基台 1‧‧‧Abutment

2‧‧‧加壓缸下板 2‧‧‧Pressure cylinder lower plate

3‧‧‧滑動移動台 3‧‧‧Sliding mobile station

4‧‧‧滑動缸 4‧‧‧Sliding cylinder

5‧‧‧下加熱板 5‧‧‧ Lower heating plate

6‧‧‧下板構件 6‧‧‧ Lower plate components

7‧‧‧基板置台(平台) 7‧‧‧Substrate placement (platform)

8‧‧‧支柱 8‧‧‧ pillar

9‧‧‧加壓缸上板 9‧‧‧Pressure cylinder upper plate

10‧‧‧中間移動構件(中間構件) 10‧‧‧Intermediate moving parts (intermediate members)

11‧‧‧上加熱板 11‧‧‧Upper heating plate

12‧‧‧上框構件 12‧‧‧Upper frame components

13‧‧‧內框體；內構件 13‧‧‧ inner frame; internal components

13a‧‧‧框狀推壓部 13a‧‧‧Frame pressing

13b‧‧‧桿 13b‧‧‧ rod

14‧‧‧加壓缸 14‧‧‧Pressure cylinder

15‧‧‧缸桿 15‧‧‧Cylinder rod

16‧‧‧真空、加壓口 16‧‧‧Vacuum, pressurized port

17‧‧‧頂板(平板) 17‧‧‧ top board (flat)

21‧‧‧基板 21‧‧‧Substrate

22‧‧‧電子元件 22‧‧‧Electronic components

23‧‧‧密封片 23‧‧‧ Sealing film

24‧‧‧脫模薄膜 24‧‧‧ release film

24a‧‧‧中央部 24a‧‧‧Central Department

24b‧‧‧周邊部 24b‧‧‧ peripherals

31‧‧‧附密封片之脫模薄膜 31‧‧‧ Release film with sealing sheet

41‧‧‧積層體 41‧‧‧Layered body

42‧‧‧附元件之基板 42‧‧‧Substrate with components

51‧‧‧晶片暫時固定體 51‧‧‧ wafer temporary fixture

51a‧‧‧載體 51a‧‧‧ Carrier

51b‧‧‧黏著劑 51b‧‧‧Adhesive

51c‧‧‧半導體晶片 51c‧‧‧Semiconductor wafer

61‧‧‧密封體 61‧‧‧ Sealing body

61a‧‧‧樹脂部 61a‧‧‧Resin Department

71‧‧‧硬化體 71‧‧‧ hardened body

71a‧‧‧保護部 71a‧‧Protection Department

101‧‧‧積層構造體 101‧‧‧Multilayer structure

104‧‧‧再配線體 104‧‧‧Rewiring body

105‧‧‧半導體封裝體 105‧‧‧Semiconductor package

116‧‧‧真空、加壓口 116‧‧‧Vacuum, pressurized port

121‧‧‧密閉空間；密閉容器 121‧‧‧Confined space; closed container

131‧‧‧分離件 131‧‧‧Separate parts

140‧‧‧再配線層 140‧‧‧Rewiring layer

141‧‧‧緩衝塗膜 141‧‧‧ Buffer coating film

142‧‧‧遮罩 142‧‧‧ mask

143‧‧‧抗蝕層 143‧‧‧resist

144‧‧‧鍍敷圖案 144‧‧‧ plating pattern

145‧‧‧再配線 145‧‧‧Rewiring

146‧‧‧保護膜 146‧‧‧Protective film

147‧‧‧電極 147‧‧‧electrode

148‧‧‧凸塊 148‧‧‧Bumps

151c‧‧‧電極墊 151c‧‧‧electrode pad

251c‧‧‧電路形成面 251c‧‧‧ circuit forming surface

S‧‧‧止動件 S‧‧‧stops

圖式之簡單說明 Simple description of the schema

圖1係真空熱加壓裝置之概略圖。 Figure 1 is a schematic view of a vacuum heat pressurizing device.

圖2係示意性顯示在基板置台上依序配置有基板、電子元件、密封片、脫模薄膜之情形的圖。 2 is a view schematically showing a state in which a substrate, an electronic component, a sealing sheet, and a release film are sequentially disposed on a substrate stage.

圖3係示意性顯示藉由上加熱板、上框構件及下板構件形成真空隔壁之情形的圖。 Fig. 3 is a view schematically showing a state in which a vacuum partition wall is formed by an upper heating plate, an upper frame member, and a lower plate member.

圖4係示意性顯示以脫模薄膜覆蓋基板、電子元件及密封片，而形成收容基板、電子元件及密封片之密閉空間之情形的圖。 4 is a view schematically showing a state in which a substrate, an electronic component, and a sealing sheet are covered with a release film to form a sealed space in which a substrate, an electronic component, and a sealing sheet are housed.

圖5係示意性顯示導入氣體至真空腔室中將密封片推壓在電子元件上之情形的圖。 Fig. 5 is a view schematically showing a state in which a gas is introduced into a vacuum chamber to press a sealing sheet against an electronic component.

圖6係示意性顯示藉頂板使電子元件封裝體平坦化之情形的圖。 Fig. 6 is a view schematically showing a state in which the electronic component package is planarized by the top plate.

圖7係示意性顯示將附密封片之脫模薄膜固定在框狀推壓部之情形的圖。 Fig. 7 is a view schematically showing a state in which a release film with a sealing sheet is fixed to a frame-shaped pressing portion.

圖8係示意性顯示藉由上加熱板、上框構件及下板構件形成真空隔壁之情形的圖。 Fig. 8 is a view schematically showing a state in which a vacuum partition wall is formed by an upper heating plate, an upper frame member, and a lower plate member.

圖9係示意性顯示以脫模薄膜覆蓋基板、電子元件及密封片，而形成收容基板、電子元件及密封片之密閉空間之情形的圖。 Fig. 9 is a view schematically showing a state in which a substrate, an electronic component, and a sealing sheet are covered with a release film to form a sealed space in which a substrate, an electronic component, and a sealing sheet are housed.

圖10係示意性顯示導入氣體至真空腔室中將密封片推 壓在電子元件上之情形的圖。 Figure 10 is a schematic view showing the introduction of gas into the vacuum chamber to push the sealing sheet A diagram of the situation of pressing on an electronic component.

圖11係示意性顯示藉頂板使電子元件封裝體平坦化之情形的圖。 Fig. 11 is a view schematically showing a state in which the electronic component package is planarized by the top plate.

圖12係顯示在平台上配置有積層構造體之概略情形的截面圖。 Fig. 12 is a cross-sectional view showing an outline of a configuration in which a laminated structure is disposed on a platform.

圖13係晶片暫時固定體之概略截面圖。 Figure 13 is a schematic cross-sectional view showing a temporary fixing body of a wafer.

圖14係顯示已形成真空腔室之概略情形的截面圖。 Figure 14 is a cross-sectional view showing a schematic view of a vacuum chamber having been formed.

圖15係顯示已形成收納晶片暫時固定體及密封片之密閉容器之概略情形的截面圖。 Fig. 15 is a cross-sectional view showing the outline of a sealed container in which a wafer temporary fixing body and a sealing sheet are formed.

圖16係顯示使密閉容器之外部壓力為大氣壓之概略情形的截面圖。 Fig. 16 is a cross-sectional view showing the outline of the external pressure of the hermetic container at atmospheric pressure.

圖17係顯示已利用密閉容器內外之壓力差形成密封體之概略情形的截面圖。 Fig. 17 is a cross-sectional view showing the outline of the sealing body formed by the pressure difference between the inside and the outside of the sealed container.

圖18係顯示在密封體旁配置有分離件之概略情形的截面圖。 Fig. 18 is a cross-sectional view showing a schematic view in which a separating member is disposed beside a sealing body.

圖19係顯示以平板推壓密封體之概略情形的截面圖。 Fig. 19 is a cross-sectional view showing a schematic view of pressing a sealing body with a flat plate.

圖20係硬化體等之概略截面圖。 Fig. 20 is a schematic cross-sectional view showing a hardened body or the like.

圖21係硬化體之概略截面圖。 Fig. 21 is a schematic cross-sectional view showing a hardened body.

圖22係顯示在硬化體上形成有緩衝塗膜之概略情形的截面圖。 Fig. 22 is a cross-sectional view showing the outline of a buffer coating film formed on a hardened body.

圖23係顯示在緩衝塗膜上配置有遮罩之狀態下，於緩衝塗膜形成開口之概略情形的截面圖。 FIG. 23 is a cross-sectional view showing an outline of forming an opening in a buffer coating film in a state in which a mask is placed on a buffer coating film.

圖24係顯示去除遮罩後之概略情形的截面圖。 Fig. 24 is a cross-sectional view showing the outline of the case after the mask is removed.

圖25係顯示在晶種層上形成有抗蝕層之概略情形的截 面圖。 Figure 25 is a cross-sectional view showing the outline of the formation of a resist layer on the seed layer. Surface map.

圖26係顯示在晶種層上形成有鍍敷圖案之概略情形的截面圖。 Fig. 26 is a cross-sectional view showing a schematic form in which a plating pattern is formed on a seed layer.

圖27係顯示已形成再配線之概略情形的截面圖。 Fig. 27 is a cross-sectional view showing the outline of the formation of rewiring.

圖28係顯示在再配線上形成有保護膜之概略情形的截面圖。 Fig. 28 is a cross-sectional view showing the outline of a protective film formed on the rewiring.

圖29係顯示在保護膜上形成有開口之概略情形的截面圖。 Figure 29 is a cross-sectional view showing a schematic view in which an opening is formed on a protective film.

圖30係顯示在再配線上形成有電極之概略情形的截面圖。 Fig. 30 is a cross-sectional view showing an outline of an electrode formed on a rewiring.

圖31係顯示在電極上形成有凸塊之概略情形的截面圖。 Figure 31 is a cross-sectional view showing a schematic view in which bumps are formed on electrodes.

圖32係藉由切割再配線體所獲得之半導體封裝體的概略截面圖。 32 is a schematic cross-sectional view of a semiconductor package obtained by cutting a rewiring body.

用以實施發明之形態 Form for implementing the invention

以下揭示本實施形態，且詳細地說明第1及第2本發明，但是第1及第2本發明不只限定於該等實施形態。 Hereinafter, the first embodiment and the second invention will be described in detail, but the first and second inventions are not limited to the embodiments.

[實施形態1] [Embodiment 1]

(真空熱加壓裝置) (vacuum hot pressing device)

首先，說明在實施形態1之密封方法中使用之真空熱加壓裝置(真空加熱接合裝置)。 First, a vacuum heat press device (vacuum heat bonding device) used in the sealing method of the first embodiment will be described.

如圖1所示，在真空熱加壓裝置中，在基台1上配置有加壓缸下板2，且在加壓缸下板2上藉由滑動缸4配置有 可在真空熱加壓裝置內外移動之滑動移動台3。在滑動移動台3之上方，配置有下加熱板5，且在下加熱板5之上面配置有下板構件6，並且在下板構件6之上面配置有基板置台7(以下，基板置台7亦稱為平台7)。 As shown in FIG. 1, in the vacuum heat pressurizing apparatus, the pressurizing cylinder lower plate 2 is disposed on the base 1, and the slide cylinder 4 is disposed on the pressurizing cylinder lower plate 2 The sliding mobile station 3 can be moved inside and outside the vacuum heat pressurizing device. A lower heating plate 5 is disposed above the sliding moving table 3, and a lower plate member 6 is disposed on the upper surface of the lower heating plate 5, and a substrate mounting table 7 is disposed on the upper surface of the lower plate member 6. (hereinafter, the substrate mounting table 7 is also referred to as Platform 7).

在加壓缸下板2上配置立設有多數支柱8，且支柱8之上端部固定有加壓缸上板9。支柱8亦可直接立設在基台1上。在加壓缸上板9之下方透過支柱8配置有中間移動構件(中間構件)10，且中間移動構件10之下方透過隔熱板固定上加熱板11，並且上加熱板11下面之外周部氣密地固定上框構件12且朝下方延伸。又，在上加熱板11之下面，於上框構件12之內側固定有一內框體13。上加熱板11可具有，例如作為軟化脫模薄膜24及密封片23用之加熱器的功能。下加熱板5可具有，例如作為預熱基板21用之加熱器的功能。在上加熱板11之下面上，於內框體13之內側固定有一頂板17(以下，亦稱為平板17)。 A plurality of pillars 8 are disposed on the lower cylinder 2, and a pressurizing cylinder upper plate 9 is fixed to the upper end of the pillars 8. The strut 8 can also be erected directly on the abutment 1. An intermediate moving member (intermediate member) 10 is disposed below the pressurizing cylinder upper plate 9 through the strut 8, and the upper moving member 10 is fixed to the lower heating plate 11 through the heat insulating plate, and the outer peripheral portion of the upper heating plate 11 The upper frame member 12 is fixed in a dense manner and extends downward. Further, an inner frame 13 is fixed to the inner side of the upper frame member 12 under the upper heating plate 11. The upper heating plate 11 may have, for example, a function as a heater for softening the release film 24 and the sealing sheet 23. The lower heating plate 5 may have, for example, a function as a heater for preheating the substrate 21. On the lower surface of the upper heating plate 11, a top plate 17 (hereinafter also referred to as a flat plate 17) is fixed to the inner side of the inner frame body 13.

內框體13具有下端部之框狀推壓部13a及由該框狀推壓部13a朝上方延伸之桿13b，且桿13b之周圍配置有彈簧，並且桿13b係隔熱固定在上加熱板11之下面。框狀推壓部13a相對桿13b藉由彈簧賦予朝下方之勢能。在框狀推壓部13a與平台7間可氣密地保持脫模薄膜24。 The inner frame body 13 has a frame-shaped pressing portion 13a at a lower end portion and a rod 13b extending upward from the frame-shaped pressing portion 13a, and a spring is disposed around the rod 13b, and the rod 13b is thermally insulated and fixed to the upper heating plate. Below 11th. The frame-shaped pressing portion 13a is given a potential energy downward by the spring with respect to the rod 13b. The release film 24 is hermetically held between the frame-like pressing portion 13a and the stage 7.

加壓缸上板9之上面配置有加壓缸14，且加壓缸14之缸桿15透過加壓缸上板9固定在中間移動構件10之上面，並且藉由加壓缸14，中間移動構件10、上加熱板11及上框構件12可上下一體地移動。在圖1中，S係限制中間移 動構件10、上加熱板11及12藉由加壓缸14向下移動之止動件，且下降成為抵接加壓缸14本體上面之止動板之狀態。加壓缸14可使用油壓缸、氣壓缸、伺服缸等。 A pressurizing cylinder 14 is disposed on the upper surface of the upper cylinder 9 and the cylinder rod 15 of the pressurizing cylinder 14 is fixed to the upper surface of the intermediate moving member 10 through the upper cylinder 9 and is moved by the pressurizing cylinder 14 The member 10, the upper heating plate 11, and the upper frame member 12 are movable integrally up and down. In Figure 1, the S system limits the intermediate shift The moving member 10, the upper heating plates 11 and 12 are moved downward by the pressing cylinder 14, and are lowered to a state of abutting against the stopper plate on the upper surface of the pressing cylinder 14. As the pressurizing cylinder 14, a hydraulic cylinder, a pneumatic cylinder, a servo cylinder or the like can be used.

由藉加壓缸14拉起上框構件12之狀態使其下降，藉此可在設於下板構件6外周部端部之段差部使上框構件12之下端部氣密地滑動。因此，可形成具備上加熱板11、上框構件12及下板構件6之真空隔壁(以下，真空隔壁亦稱為收納容器)。又，上框構件12設有用以抽真空、加壓真空隔壁之內部(以下，真空隔壁之內部亦稱為真空腔室)的真空、加壓口16。 The upper frame member 12 is pulled up by the pressurizing cylinder 14 to be lowered, whereby the lower end portion of the upper frame member 12 can be hermetically slid at the step provided at the end portion of the outer peripheral portion of the lower plate member 6. Therefore, a vacuum partition wall including the upper heating plate 11, the upper frame member 12, and the lower plate member 6 (hereinafter, the vacuum partition wall is also referred to as a storage container) can be formed. Further, the upper frame member 12 is provided with a vacuum and pressure port 16 for evacuating and pressurizing the inside of the vacuum partition wall (hereinafter, the inside of the vacuum partition wall is also referred to as a vacuum chamber).

在打開真空腔室之狀態下，藉由滑動缸4，可一體地拉出滑動移動台3、下加熱板5及下板構件6至外部。在拉出該等之狀態下，在平台7上，可配置基板21等。 By sliding the cylinder 4, the slide moving table 3, the lower heating plate 5, and the lower plate member 6 can be integrally pulled out to the outside in a state where the vacuum chamber is opened. The substrate 21 and the like can be disposed on the stage 7 in a state where the above is pulled out.

接著，說明實施形態1之密封方法的各步驟。 Next, each step of the sealing method of the first embodiment will be described.

(配置步驟) (configuration steps)

如圖2所示，在平台7上配置積層體41。積層體41具備附元件之基板42、配置在附元件之基板42上之密封片23及配置在密封片23上之脫模薄膜24。 As shown in FIG. 2, the laminated body 41 is arrange|positioned on the platform 7. The laminated body 41 includes a substrate 42 with components, a sealing sheet 23 disposed on the substrate 42 with the components, and a release film 24 disposed on the sealing sheet 23.

附元件之基板42具備基板21及配置在基板21上之電子元件22。 The substrate 42 with components is provided with a substrate 21 and an electronic component 22 disposed on the substrate 21.

脫模薄膜24具備與密封片23連接之中央部24a及配置在中央部24a周邊之周邊部24b。 The release film 24 includes a central portion 24a that is connected to the sealing sheet 23, and a peripheral portion 24b that is disposed around the central portion 24a.

又，在配置步驟中，例如，亦可在配置於基板21上之電子元件22上依序配置密封片23及脫模薄膜24。 Further, in the disposing step, for example, the sealing sheet 23 and the release film 24 may be sequentially disposed on the electronic component 22 disposed on the substrate 21.

脫模薄膜24之外形尺寸係可覆蓋基板21、電子元件22及密封片23之大小。 The outer shape of the release film 24 can cover the size of the substrate 21, the electronic component 22, and the sealing sheet 23.

密封片23之外形尺寸係可密封電子元件22之大小。例如，在平台7及框狀推壓部13a之間氣密地保持脫模薄膜24時，密封片23係不被夾在平台7與框狀推壓部13a間之大小。 The outer dimensions of the sealing sheet 23 are such that the size of the electronic component 22 can be sealed. For example, when the release film 24 is hermetically held between the stage 7 and the frame-shaped pressing portion 13a, the sealing sheet 23 is not sandwiched between the stage 7 and the frame-shaped pressing portion 13a.

密封片23係在稍後詳細地說明。 The sealing sheet 23 will be described in detail later.

電子元件22沒有特別限制，可舉例如：SAW(表面聲波，Surface Acoustic Wave)濾波器、壓力感測器及振動感測器等之MEMS(微機電系統，Micro Electro Mechanical Systems)元件；LSI等之IC(積體電路)，及電晶體等之半導體；電阻等。 The electronic component 22 is not particularly limited, and examples thereof include a MEMS (Micro Electro Mechanical Systems) device such as a SAW (Surface Acoustic Wave) filter, a pressure sensor, and a vibration sensor; IC (integrated circuit), semiconductor such as transistor, resistor, etc.

基板21沒有特別限制，例如，可舉印刷配線板、陶瓷基板、矽基板、金屬基板等為例。 The substrate 21 is not particularly limited, and examples thereof include a printed wiring board, a ceramic substrate, a tantalum substrate, and a metal substrate.

基板21宜為業經電漿處理者。電漿化之氣體可舉氬等為例。因此，可提高電性連接之信賴性。 The substrate 21 is preferably a plasma treated person. The pulverized gas may be exemplified by argon or the like. Therefore, the reliability of the electrical connection can be improved.

脫模薄膜24之材質沒有特別限制，可舉氟系薄膜、聚烯烴系薄膜等為例。特別地，由耐熱性及拉伸特性良好之理由來看，聚-4-甲基戊烯-1較佳。 The material of the release film 24 is not particularly limited, and examples thereof include a fluorine-based film and a polyolefin-based film. In particular, poly-4-methylpentene-1 is preferred from the viewpoint of good heat resistance and tensile properties.

脫模薄膜24於常溫下之拉伸斷裂伸長率宜為30%以上，且以40%以上更佳。30%以上時，成型時之凹凸追隨性良好。脫模薄膜24於常溫下之拉伸斷裂伸長率宜為300%以下，且以100%以下更佳。300%以下時，剝離作業容易。 The tensile elongation at break of the release film 24 at normal temperature is preferably 30% or more, and more preferably 40% or more. When it is 30% or more, the unevenness followability at the time of molding is good. The tensile elongation at break of the release film 24 at normal temperature is preferably 300% or less, and more preferably 100% or less. When it is 300% or less, the peeling operation is easy.

拉伸斷裂伸長率係依據ASTM D882測量。 Tensile elongation at break is measured in accordance with ASTM D882.

脫模薄膜24之軟化溫度沒有特別限制，但是宜為80℃以下，且以60℃以下更佳。80℃以下時，成型時之凹凸追隨性良好。又，脫模薄膜24之軟化溫度宜為0℃以上。 The softening temperature of the release film 24 is not particularly limited, but is preferably 80 ° C or lower, and more preferably 60 ° C or lower. When the temperature is 80 ° C or less, the unevenness followability at the time of molding is good. Further, the softening temperature of the release film 24 is preferably 0 ° C or higher.

又，以拉伸彈性率為300MPa之溫度作為軟化溫度。 Further, the temperature at which the tensile modulus was 300 MPa was taken as the softening temperature.

脫模薄膜24之表面宜呈凹凸形狀。因此，可由密封片23良好地剝離脫模薄膜24。 The surface of the release film 24 preferably has a concave-convex shape. Therefore, the release film 24 can be favorably peeled off by the sealing sheet 23.

脫模薄膜24之厚度沒有特別限制，但是宜為10μm至200μm。在上述範圍內，可良好地密封電子元件22。 The thickness of the release film 24 is not particularly limited, but is preferably from 10 μm to 200 μm. Within the above range, the electronic component 22 can be well sealed.

(真空隔壁形成步驟) (vacuum partition forming step)

圖3係示意性顯示藉由上加熱板11、上框構件12及下板構件6形成真空隔壁之情形的圖。如圖3所示，藉由加壓缸14使上加熱板11下降，且使上框構件12之下端部在下板構件6之外緣部之段差上氣密地滑動而形成真空隔壁。在真空隔壁之內部形成真空腔室之階段，停止上加熱板11之下降。 Fig. 3 is a view schematically showing a state in which a vacuum partition wall is formed by the upper heating plate 11, the upper frame member 12, and the lower plate member 6. As shown in Fig. 3, the upper heating plate 11 is lowered by the pressurizing cylinder 14, and the lower end portion of the upper frame member 12 is hermetically slid in the step of the outer edge portion of the lower plate member 6, thereby forming a vacuum partition wall. At the stage of forming a vacuum chamber inside the vacuum partition wall, the lowering of the upper heating plate 11 is stopped.

(抽真空步驟) (vacuum step)

在抽真空步驟中，進行抽真空，且使真空腔室內成為減壓狀態(以真空狀態為佳)後，加熱脫模薄膜24及密封片23，使其軟化。又，脫模薄膜24及密封片23之加熱亦可在抽真空前、在抽真空中進行。 In the vacuuming step, vacuuming is performed, and the vacuum chamber is brought into a reduced pressure state (preferably in a vacuum state), and then the release film 24 and the sealing sheet 23 are heated and softened. Further, the heating of the release film 24 and the sealing sheet 23 may be performed before vacuuming and under vacuum.

脫模薄膜24及密封片23之加熱溫度宜為50℃至150℃。 The heating temperature of the release film 24 and the sealing sheet 23 is preferably from 50 ° C to 150 ° C.

如圖3所示，密封片23由與電子元件22連接之接觸部向接觸部之周邊傾斜。又，脫模薄膜24由中央部24a 向周邊部24b傾斜。周邊部24b之一部份與平台7連接。 As shown in FIG. 3, the sealing piece 23 is inclined toward the periphery of the contact portion by a contact portion connected to the electronic component 22. Moreover, the release film 24 is composed of the central portion 24a. It is inclined to the peripheral portion 24b. A portion of the peripheral portion 24b is connected to the platform 7.

(密閉空間形成步驟) (Confined space forming step)

如圖4所示，使上加熱板11進一步下降，且藉由內構件13下端部之下面，推壓脫模薄膜24在平台7上，並且以脫模薄膜24覆蓋基板21、電子元件22及密封片23。因此，形成收容基板21、電子元件22及密封片23之密閉空間。 As shown in FIG. 4, the upper heating plate 11 is further lowered, and the release film 24 is pushed onto the platform 7 by the lower surface of the lower end portion of the inner member 13, and the substrate 21, the electronic component 22, and the release film 24 are covered. Sealing sheet 23. Therefore, a sealed space in which the substrate 21, the electronic component 22, and the sealing sheet 23 are housed is formed.

即，藉由以框狀推壓部13a推壓周邊部24b在平台7上，形成密閉容器121。密閉容器121具備平台7及脫模薄膜24。密閉容器121之內部(密閉空間)配置有基板21、電子元件22及密封片23。又，由於使真空腔室形成減壓狀態後形成密閉空間，故密閉空間之內部及外部呈減壓狀態。 In other words, the hermetic container 121 is formed by pressing the peripheral portion 24b on the stage 7 by the frame-shaped pressing portion 13a. The hermetic container 121 is provided with the stage 7 and the release film 24. The substrate 21, the electronic component 22, and the sealing sheet 23 are disposed inside the sealed container 121 (closed space). Further, since the vacuum chamber is formed into a reduced pressure state and a sealed space is formed, the inside and the outside of the sealed space are in a reduced pressure state.

(密封步驟) (sealing step)

如圖5所示，透過真空、加壓口16將氣體導入真空腔室，使密閉空間外部之壓力比密閉空間內部高，且推壓密封片23在電子元件22上。因此，可獲得藉由密封片23密封電子元件22之電子元件封裝體。氣體沒有特別限制，可舉空氣、氮氣為例。又，氣體壓力沒有特別限制，但是以大氣壓以上為佳。藉由導入氣體，可提高密閉空間外部壓力至大氣壓以上。電子元件封裝體具備附元件之基板42及配置在附元件之基板42上之樹脂層。 As shown in FIG. 5, the gas is introduced into the vacuum chamber through the vacuum and the pressure port 16, so that the pressure outside the sealed space is higher than the inside of the sealed space, and the sealing sheet 23 is pressed against the electronic component 22. Therefore, the electronic component package in which the electronic component 22 is sealed by the sealing sheet 23 can be obtained. The gas is not particularly limited, and examples of air and nitrogen are exemplified. Further, the gas pressure is not particularly limited, but it is preferably at least atmospheric pressure. By introducing a gas, the external pressure in the sealed space can be increased to above atmospheric pressure. The electronic component package includes a substrate 42 with components and a resin layer disposed on the substrate 42 of the component.

如圖6所示，亦可在導入氣體後，使頂板17下降，透過脫模薄膜24加壓電子元件封裝體，藉此使電子元件封裝體之脫模薄膜24側的面平坦化。因此，可使電子元件封裝體之厚度均一化。加壓之壓力宜為0.5至20kgf/cm2。 As shown in FIG. 6, after the gas is introduced, the top plate 17 may be lowered, and the electronic component package may be pressed through the release film 24, thereby flattening the surface of the electronic component package on the release film 24 side. Therefore, the thickness of the electronic component package can be made uniform. The pressure for pressurization is preferably from 0.5 to 20 kgf/cm 2 .

(其他步驟) (other steps)

藉由加熱電子元件封裝體，使樹脂層硬化。接著，在電子元件封裝體上設置凸塊。然後，亦可切割電子元件封裝體使其晶片化。 The resin layer is cured by heating the electronic component package. Next, bumps are provided on the electronic component package. Then, the electronic component package can be cut to be waferized.

又，亦可在電子元件封裝體上形成再配線。 Further, rewiring may be formed on the electronic component package.

(密封片23) (sealing sheet 23)

接著，說明密封片23。 Next, the sealing sheet 23 will be described.

密封片23按升溫速度10℃/分、測量頻率1Hz及應變5%測量下顯示最低複數黏度η*的溫度係100至150℃，且最低複數黏度η*係30至3000Pa．s。由於顯示最低複數黏度η*的溫度係100至150℃，且最低複數黏度η*係30Pa．s以上，故可防止露出。另一方面，由於顯示最低複數黏度η*的溫度係100至150℃，且最低複數黏度η*係3000Pa．s以下，故可良好地填埋凹凸。 The sealing sheet 23 has a temperature coefficient of 100 to 150 ° C which shows the lowest complex viscosity η* measured at a heating rate of 10 ° C / min, a measuring frequency of 1 Hz and a strain of 5%, and the lowest complex viscosity η * is 30 to 3000 Pa. s. Since the temperature showing the lowest complex viscosity η* is 100 to 150 ° C, and the lowest complex viscosity η * is 30 Pa. s or more, so it can be prevented from being exposed. On the other hand, since the temperature showing the lowest complex viscosity η* is 100 to 150 ° C, and the lowest complex viscosity η * is 3000 Pa. Below s, the unevenness can be well filled.

最低複數黏度η*係100Pa．s以上。又，最低複數黏度η*宜為2500Pa．s以下，且以2000Pa．s以下更佳。 The lowest complex viscosity η* is 100Pa. s above. Also, the lowest complex viscosity η* should be 2500Pa. s below, and at 2000Pa. s is better below.

最低複數黏度η*可藉由無機填充劑之含量、無機填充劑之種類、有機成分之熔融黏度控制。 The lowest complex viscosity η* can be controlled by the content of the inorganic filler, the type of the inorganic filler, and the melt viscosity of the organic component.

顯示最低複數黏度η*之溫度可主要藉由硬化觸媒之種類及量控制。 The temperature at which the lowest complex viscosity η* is displayed can be controlled mainly by the type and amount of the hardening catalyst.

最低複數黏度η*及顯示最低複數黏度η*之溫度可以在實施例中記載之方法測量。 The lowest complex viscosity η* and the temperature showing the lowest complex viscosity η* can be measured by the method described in the examples.

密封片23宜包含熱硬化性樹脂。熱硬化性樹脂，例如，可適合地使用環氧樹脂、酚樹脂等。 The sealing sheet 23 preferably contains a thermosetting resin. As the thermosetting resin, for example, an epoxy resin, a phenol resin or the like can be suitably used.

環氧樹脂沒有特別限制。例如，可使用三苯甲烷型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂、變性雙酚A型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、變性雙酚F型環氧樹脂、二環戊二烯型環氧樹脂、酚系酚醛清漆型環氧樹脂、苯氧樹脂等之各種環氧樹脂。該等環氧樹脂可單獨使用亦可合併使用2種以上。 The epoxy resin is not particularly limited. For example, a triphenylmethane type epoxy resin, a cresol novolac type epoxy resin, a biphenyl type epoxy resin, a denatured bisphenol A type epoxy resin, a bisphenol A type epoxy resin, a bisphenol F type ring can be used. Various epoxy resins such as an oxygen resin, a denatured bisphenol F type epoxy resin, a dicyclopentadiene type epoxy resin, a phenol novolak type epoxy resin, and a phenoxy resin. These epoxy resins may be used alone or in combination of two or more.

環氧樹脂沒有特別限制，但是由確保硬化前之可撓性及硬化後之成型物硬度、強度之觀點來看，以環氧當量為150至250、軟化點或熔點為50至130℃且在常溫下為固形者為佳。特別地，宜含有雙酚型環氧樹脂，且以含有雙酚F型環氧樹脂更佳。 The epoxy resin is not particularly limited, but has an epoxy equivalent of 150 to 250, a softening point or a melting point of 50 to 130 ° C from the viewpoint of ensuring flexibility before hardening and hardness and strength of the molded product after hardening. It is better to be solid at room temperature. In particular, it is preferred to contain a bisphenol type epoxy resin, and it is more preferable to contain a bisphenol F type epoxy resin.

酚樹脂如果在與環氧樹脂間產生硬化反應，則沒有特別限制。例如，可使用酚系酚醛清漆型環氧樹脂、芳烷酚樹脂、芳烷聯苯樹脂、二環戊二烯型酚樹脂、甲酚酚醛清漆樹脂、可溶酚醛樹脂等。該等酚樹脂可單獨使用亦可合併使用2種以上。 The phenol resin is not particularly limited as long as it causes a hardening reaction with the epoxy resin. For example, a phenol novolak type epoxy resin, an aralkyl phenol resin, an aralkyl biphenyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resol resin, or the like can be used. These phenol resins may be used alone or in combination of two or more.

酚樹脂由與環氧樹脂之反應性的觀點來看，宜使用羥基當量係70至250，且軟化點係50至110℃者，特別地，由硬化反應性高之觀點來看，可合適地使用酚系酚醛清漆型環氧樹脂。 From the viewpoint of reactivity with an epoxy resin, the phenol resin preferably has a hydroxyl group equivalent of 70 to 250 and a softening point of 50 to 110 ° C, and particularly, from the viewpoint of high hardening reactivity, suitably A phenolic novolac type epoxy resin is used.

又，由硬化物之低翹曲性、低吸水性之觀點來看，可合適地使用具有芳烷聯苯樹脂骨架之酚樹脂。 Further, from the viewpoint of low warpage property and low water absorbability of the cured product, a phenol resin having an aralkyl biphenyl resin skeleton can be suitably used.

密封片23中環氧樹脂及酚樹脂之總含量宜為5重量%以上，且以10重量%以上更佳。5重量%以上時，可獲 得充分之硬化物強度。密封片23中環氧樹脂及酚樹脂之總含量宜為20重量%以下，且以15重量%以下更佳。20重量%以下時，硬化物之線膨脹係數小，且容易獲得低吸水性。 The total content of the epoxy resin and the phenol resin in the sealing sheet 23 is preferably 5% by weight or more, and more preferably 10% by weight or more. When it is more than 5% by weight, it is available. A sufficient hardened strength is obtained. The total content of the epoxy resin and the phenol resin in the sealing sheet 23 is preferably 20% by weight or less, and more preferably 15% by weight or less. When it is 20% by weight or less, the linear expansion coefficient of the cured product is small, and low water absorbability is easily obtained.

環氧樹脂與酚樹脂之混合比例，由硬化反應性之觀點來看，相對於環氧樹脂中之環氧基1當量，宜混合成使酚樹脂中之羥基之合計為0.7至1.5當量，且以0.9至1.2當量更佳。 The mixing ratio of the epoxy resin and the phenol resin is preferably from 0.7 to 1.5 equivalents in terms of hardening reactivity, based on 1 equivalent of the epoxy group in the epoxy resin, so that the total of the hydroxyl groups in the phenol resin is from 0.7 to 1.5 equivalents. More preferably from 0.9 to 1.2 equivalents.

密封片23含有無機填充劑。 The sealing sheet 23 contains an inorganic filler.

無機填充劑可舉例如：石英玻璃、滑石、二氧化矽(熔融二氧化矽或結晶性二氧化矽粉末等)、氧化鋁、氮化鋁、氮化矽、氮化硼等。特別地，由可良好地減少線膨脹係數之理由來看，宜為二氧化矽、氧化鋁，且以二氧化矽更佳。二氧化矽由具優異流動性之理由來看，宜為熔融二氧化矽，且以球狀熔融二氧化矽更佳。 Examples of the inorganic filler include quartz glass, talc, cerium oxide (melted cerium oxide or crystalline cerium oxide powder), alumina, aluminum nitride, cerium nitride, and boron nitride. In particular, from the standpoint that the coefficient of linear expansion can be favorably reduced, it is preferably cerium oxide, aluminum oxide, and more preferably cerium oxide. The reason why the cerium oxide is excellent in fluidity is preferably molten cerium oxide, and it is more preferable to melt the cerium oxide in a spherical form.

無機填充劑之平均粒徑宜為0.3μm以上，以1μm以上更佳，且以5μm以上又更佳。0.3μm以上時，容易獲得密封片23之可撓性、柔軟性。無機填充劑之平均粒徑宜為40μm以下，且以30μm以下更佳。40μm以下時，容易使無機填充劑高填充率化。 The average particle diameter of the inorganic filler is preferably 0.3 μm or more, more preferably 1 μm or more, and still more preferably 5 μm or more. When it is 0.3 μm or more, the flexibility and flexibility of the sealing sheet 23 are easily obtained. The average particle diameter of the inorganic filler is preferably 40 μm or less, and more preferably 30 μm or less. When it is 40 μm or less, it is easy to increase the filling rate of the inorganic filler.

又，平均粒徑可，例如，使用由母集團任意抽出之試料，且藉由使用雷射繞射散射式粒度分布測量裝置測量導出。 Further, the average particle diameter may be, for example, a sample which is arbitrarily extracted by a parent group, and which is measured and measured by using a laser diffraction scattering type particle size distribution measuring device.

密封片23中之無機填充劑含量係60體積%以上，且宜為65體積%以上。由於是60體積%以上，故可獲得 低吸水性、低翹曲性之硬化後成型物。另一方面，無機填充劑之含量係90體積%以下，且宜為85體積%以下。由於是90體積%以下，故可防止硬化前之密封片23之破裂、缺陷。 The content of the inorganic filler in the sealing sheet 23 is 60% by volume or more, and preferably 65% by volume or more. Since it is 60% by volume or more, it is available A molded article after hardening with low water absorption and low warpage. On the other hand, the content of the inorganic filler is 90% by volume or less, and preferably 85% by volume or less. Since it is 90% by volume or less, cracking and defects of the sealing sheet 23 before curing can be prevented.

無機填充劑之含量亦可以「重量%」為單位說明。代表地關於二氧化矽之含量，以「重量%」為單位說明。 The content of the inorganic filler can also be expressed in terms of "% by weight". The representative content of cerium oxide is stated in terms of "% by weight".

二氧化矽通常比重為2.2g/cm3，因此二氧化矽之含量(重量%)之適合範圍係例如以下者。 The cerium oxide usually has a specific gravity of 2.2 g/cm 3 , and thus a suitable range of the content (% by weight) of cerium oxide is, for example, the following.

即，密封片23中之二氧化矽含量宜為73重量%以上，且以77重量%以上更佳。密封片23中之二氧化矽含量宜為94重量%以下，且以91重量%以下更佳。 That is, the content of cerium oxide in the sealing sheet 23 is preferably 73% by weight or more, and more preferably 77% by weight or more. The content of cerium oxide in the sealing sheet 23 is preferably 94% by weight or less, and more preferably 91% by weight or less.

氧化鋁通常比重為3.9g/cm3，因此氧化鋁之含量(重量%)之適合範圍係例如以下者。 The alumina generally has a specific gravity of 3.9 g/cm 3 , and therefore a suitable range of the content (% by weight) of alumina is, for example, the following.

即，密封片23中之氧化鋁含量宜為83重量%以上，且以86重量%以上更佳。密封片23中之氧化鋁含量宜為95重量%以下，且以93重量%以下更佳。 That is, the alumina content in the sealing sheet 23 is preferably 83% by weight or more, and more preferably 86% by weight or more. The content of alumina in the sealing sheet 23 is preferably 95% by weight or less, and more preferably 93% by weight or less.

密封片23宜含有矽烷耦合劑。 The sealing sheet 23 preferably contains a decane coupling agent.

矽烷耦合劑係在分子中具有加水分解性基及有機官能基之化合物。 A decane coupling agent is a compound having a hydrolyzable group and an organic functional group in a molecule.

加水分解性基可舉例如：甲氧基、乙氧基等之碳數1至6的烷氧基，乙醯氧基，2-甲氧乙氧基等。特別地，由容易去除因加水分解產生之醇等揮發成分的理由來看，以甲氧基為佳。 The hydrolyzable group may, for example, be an alkoxy group having 1 to 6 carbon atoms such as a methoxy group or an ethoxy group, an ethoxy group or a 2-methoxyethoxy group. In particular, a methoxy group is preferred because it is easy to remove a volatile component such as an alcohol produced by hydrolysis.

有機官能機可舉例如：乙烯基、環氧基、苯乙烯 基、甲基丙烯酸基、丙烯酸基、胺基、巰基、硫基、異氰酸基等。特別地，由抑制無機填充劑之凝集的理由來看，以甲基丙烯酸基為佳。 The organic functional machine may, for example, be a vinyl group, an epoxy group, or a styrene. A group, a methacryl group, an acryl group, an amine group, a fluorenyl group, a thio group, an isocyanate group or the like. In particular, from the viewpoint of suppressing aggregation of the inorganic filler, a methacryl group is preferred.

矽烷耦合劑可舉例如：乙烯三甲氧矽烷、乙烯三乙氧矽烷等之含乙烯基矽烷耦合劑；2-(3,4-環氧環己基)乙基三甲氧矽烷、3-環氧丙氧基丙基甲基二甲氧矽烷、3-環氧丙氧基丙基三甲氧矽烷、3-環氧丙氧基丙基甲基二乙氧矽烷、3-環氧丙氧基丙基三乙氧矽烷等之含環氧基矽烷耦合劑；p-苯乙烯三甲氧矽烷等之含苯乙烯基矽烷耦合劑；3-甲基丙烯醯氧基丙基甲基二甲氧矽烷、3-甲基丙烯醯氧基丙基三甲氧矽烷、3-甲基丙烯醯氧基丙基甲基二乙氧矽烷、3-甲基丙烯醯氧基丙基三乙氧矽烷等之含甲基丙烯酸基矽烷耦合劑；3-丙烯醯氧基丙基三甲氧矽烷等之含丙烯酸基矽烷耦合劑；N-2-(胺乙基)-3-胺丙基甲基二甲氧矽烷、N-2-(胺乙基)-3-胺丙基三甲氧矽烷、3-胺丙基三甲氧矽烷、3-胺丙基三乙氧矽烷、3-三乙氧矽基-N-(1,3-二甲基-丁二烯)丙胺、N-苯基-3-胺丙基三甲氧矽烷、N-(乙烯苄基)-2-胺乙基-3-胺丙基三甲氧矽烷等之含胺基矽烷耦合劑；3-醯基尿素丙基三乙氧矽烷等之含醯基尿素矽烷耦合劑；3-巰基丙基甲基二甲氧矽烷、3-巰基丙基三甲氧矽烷等之含巰基矽烷耦合劑；雙(三乙氧矽丙基)四硫等含硫基矽烷耦合劑；3-異氰酸丙基三乙氧矽烷等之含異氰酸基矽烷耦合劑等。 The decane coupling agent may, for example, be a vinyl decane-containing coupling agent such as ethylene trimethoxy decane or ethylene triethoxy decane; 2-(3,4-epoxycyclohexyl)ethyltrimethoxy decane or 3-glycidoxy oxychloride; Propyl dimethyl dimethoxy decane, 3-glycidoxypropyl trimethoxy decane, 3-glycidoxy propyl methyl diethoxy decane, 3-glycidoxypropyl triethyl An epoxy group-containing decane coupling agent such as oxoxane; a styrene-based decane coupling agent such as p-styrene trimethoxane; 3-methylpropenyloxypropylmethyldimethoxydecane, 3-methyl Methacrylic acid-containing decane coupling such as acryloxypropyltrimethoxy decane, 3-methacryloxypropylmethyldiethoxy decane, 3-methylpropenyloxypropyltriethoxy decane, etc. a acrylate-containing decane coupling agent such as 3-propenyloxypropyltrimethoxyoxane; N-2-(aminoethyl)-3-aminopropylmethyldimethoxydecane, N-2-(amine) Ethyl)-3-aminopropyltrimethoxy decane, 3-aminopropyltrimethoxy decane, 3-aminopropyltriethoxy decane, 3-triethoxyindolyl-N-(1,3-dimethyl -butadiene) propylamine, N-phenyl-3-aminopropyltrimethoxy decane, N-( An amine-based decane coupling agent such as ethylene benzyl)-2-amineethyl-3-aminopropyltrimethoxy oxane; a thiol-containing urea decane coupling agent such as 3-mercaptoureidopropyltriethoxy decane; a mercapto-based decane coupling agent such as mercaptopropylmethyldimethoxydecane or 3-mercaptopropyltrimethoxyoxane; a sulfur-containing decane coupling agent such as bis(triethoxyphosphonium propyl) tetrasulfide; 3-isocyanide An isocyanatodecane coupling agent such as acid propyl triethoxyoxane or the like.

矽烷耦合劑之含量沒有特別限制，但是相對無機 填充劑100重量份，以0.05至5重量份為佳。 The content of the decane coupling agent is not particularly limited, but relatively inorganic The filler is preferably used in an amount of 0.05 to 5 parts by weight based on 100 parts by weight.

密封片23宜含有硬化促進劑。 The sealing sheet 23 preferably contains a hardening accelerator.

硬化促進劑如果可進行環氧樹脂與酚樹脂之硬化，則沒有特別限制，且可舉例如：三苯膦、四苯鏻四苯硼酸酯等之有機磷化合物；2-苯基-4,5-二羥甲基咪唑、2-苯基-4-甲基-5-羥甲基咪唑等之咪唑系化合物等。特別地，由獲得良好保存性之理由來看，以2-苯基-4,5-二羥甲基咪唑為佳。 The hardening accelerator is not particularly limited as long as it can harden the epoxy resin and the phenol resin, and examples thereof include an organic phosphorus compound such as triphenylphosphine or tetraphenylphosphonium tetraphenyl borate; and 2-phenyl-4. An imidazole compound such as 5-dimethylol imidazole or 2-phenyl-4-methyl-5-hydroxymethylimidazole. In particular, 2-phenyl-4,5-dihydroxymethylimidazole is preferred from the standpoint of obtaining good preservability.

硬化促進劑之含量，相對於環氧樹脂及酚樹脂之合計100重量份，宜為0.1重量份以上，且以0.5重量份以上更佳。0.1重量份以上時，在實用之時間內硬化終止。又，硬化促進劑之含量宜為5重量份以下，且以2重量份以下更佳。5重量份以下時，可獲得良好保存性。 The content of the hardening accelerator is preferably 0.1 parts by weight or more, and more preferably 0.5 parts by weight or more, based on 100 parts by weight of the total of the epoxy resin and the phenol resin. When it is 0.1 part by weight or more, the hardening is terminated in a practical time. Further, the content of the hardening accelerator is preferably 5 parts by weight or less, and more preferably 2 parts by weight or less. When it is 5 parts by weight or less, good storage stability can be obtained.

密封片23宜含有熱可塑性樹脂(彈性體)。 The sealing sheet 23 preferably contains a thermoplastic resin (elastomer).

熱可塑性樹脂可舉例如：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯、熱可塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等之聚醯胺樹脂、苯氧樹脂、丙烯酸樹脂、PET或PBT等之飽和聚酯樹脂、聚醯胺醯亞胺樹脂、氟樹脂、苯乙烯-異丁烯-苯乙烯嵌段共聚物、甲基丙烯酸甲酯-丁二烯-苯乙烯(MBS樹脂)等。特別地，由對環氧樹脂之分散性的理由來看，以具有由橡膠成分構成之核心層及由丙烯酸樹脂構成之外殼層之核殼型丙烯酸樹脂為佳。 The thermoplastic resin may, for example, be natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene. Resin, polycarbonate, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET or PBT, polyamine A quinone imine resin, a fluororesin, a styrene-isobutylene-styrene block copolymer, methyl methacrylate-butadiene-styrene (MBS resin), or the like. In particular, from the viewpoint of the dispersibility of the epoxy resin, a core-shell type acrylic resin having a core layer composed of a rubber component and an outer shell layer composed of an acrylic resin is preferable.

構成核殼型丙烯酸樹脂之橡膠成分沒有特別限制，可舉例如：丁二烯橡膠、異戊二烯橡膠、氯丁二烯橡膠、丙烯酸橡膠、矽橡膠等。 The rubber component constituting the core-shell type acrylic resin is not particularly limited, and examples thereof include butadiene rubber, isoprene rubber, chloroprene rubber, acrylic rubber, and ruthenium rubber.

核殼型丙烯酸樹脂之平均粒徑宜為0.1μm以上，且以0.5μm以上更佳。0.1μm以上時，分散性良好。核殼型丙烯酸樹脂之平均粒徑宜為200μm以下，且以100μm以下更佳。200μm以下時，製成之片的平坦性良好。 The average particle diameter of the core-shell type acrylic resin is preferably 0.1 μm or more, and more preferably 0.5 μm or more. When it is 0.1 μm or more, the dispersibility is good. The average particle diameter of the core-shell type acrylic resin is preferably 200 μm or less, and more preferably 100 μm or less. When the thickness is 200 μm or less, the flatness of the produced sheet is good.

又，平均粒徑可，例如，使用由母集團任意抽出之試料，且藉由使用雷射繞射散射式粒度分布測量裝置測量導出。 Further, the average particle diameter may be, for example, a sample which is arbitrarily extracted by a parent group, and which is measured and measured by using a laser diffraction scattering type particle size distribution measuring device.

熱可塑性樹脂之含量，相對於有機成分(例如，環氧樹脂、酚樹脂、熱可塑性樹脂、硬化促進劑等)100重量份，宜為1重量份以上，且以5重量份以上更佳。1重量份以上時，可撓性良好。又，熱可塑性樹脂之含量宜為50重量份以下，且以40重量份以下更佳。50重量份以下時，流動性、變形性良好。 The content of the thermoplastic resin is preferably 1 part by weight or more, and more preferably 5 parts by weight or more based on 100 parts by weight of the organic component (for example, an epoxy resin, a phenol resin, a thermoplastic resin, or a curing accelerator). When it is 1 part by weight or more, the flexibility is good. Further, the content of the thermoplastic resin is preferably 50 parts by weight or less, and more preferably 40 parts by weight or less. When it is 50 parts by weight or less, fluidity and deformability are good.

密封片23亦可含有顏料、阻燃劑成分等。 The sealing sheet 23 may also contain a pigment, a flame retardant component, or the like.

顏料沒有特別限制，可舉碳黑等為例。密封片23中之顏料含量宜為0.01至1重量%。 The pigment is not particularly limited, and examples thereof include carbon black. The pigment content in the sealing sheet 23 is preferably from 0.01 to 1% by weight.

阻燃劑成分可使用，例如，氫氧化鋁、氫氧化鎂、氫氧化鐵、氫氧化鈣、氫氧化錫、複合氫氧化物等之各種金屬氫氧化物；氮磷基化合物等。特別地，由具有優異阻燃性、硬化後強度之理由來看，以氮磷基化合物為佳。 As the flame retardant component, for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, and composite hydroxide; a nitrogen-phosphorus-based compound and the like can be used. In particular, a nitrogen-phosphorus-based compound is preferred from the viewpoint of having excellent flame retardancy and strength after hardening.

密封片23之製造方法沒有特別限制，但是以將 混練前述各成分(例如，環氧樹脂、酚樹脂、無機填充劑及硬化促進劑)得到之混練物塑性加工成片狀之方法為佳。藉此，可高填充無機填充劑。 The manufacturing method of the sealing sheet 23 is not particularly limited, but A method in which the kneaded material obtained by kneading each of the above components (for example, an epoxy resin, a phenol resin, an inorganic filler, and a hardening accelerator) is plastically processed into a sheet shape is preferred. Thereby, the inorganic filler can be highly filled.

具體而言，藉由混合輥、加壓式捏合機、擠出機等習知之混練機熔融混練環氧樹脂、酚樹脂、無機填充劑及硬化促進劑，藉此調製混練物，且將製得之混練物塑性加工成片狀。混練條件之溫度上限宜為140℃以下，且以130℃以下更佳。溫度下限宜在上述各成分之軟化點以上，例如30℃以上，且以50℃以上為佳。混練之時間宜為1至30分。又，混練宜在減壓條件下(減壓環境下)進行，且減壓條件下之壓力係，例如，1×10-4至0.1kg/cm2。 Specifically, the epoxy resin, the phenol resin, the inorganic filler, and the hardening accelerator are melt-kneaded by a conventional kneading machine such as a mixing roll, a pressure kneader, or an extruder to prepare a kneaded product, and the obtained kneaded product is prepared. The kneaded material is plastically processed into a sheet shape. The upper limit of the temperature of the kneading conditions is preferably 140 ° C or less, and more preferably 130 ° C or less. The lower limit of the temperature is preferably at least the softening point of each of the above components, for example, 30 ° C or higher, and preferably 50 ° C or higher. The time for mixing should be 1 to 30 minutes. Further, the kneading is preferably carried out under reduced pressure (under reduced pressure), and the pressure under reduced pressure is, for example, 1 × 10 -4 to 0.1 kg/cm 2 .

熔融混練後之混練物宜不冷卻而在原來高溫狀態下塑性加工。塑性加工方法沒有特別限制，可舉例如：平板按壓法、T模擠出法、螺桿模擠出法、輥壓法、輥混練法、充氣擠出法、共擠出法、壓延成形法等。塑性加工溫度宜在上述各成分之軟化點以上，且考慮環氧樹脂之熱硬化性及成形性時，例如為40至150℃，且宜為50至140℃，並且以70至120℃更佳。 The kneaded material after melt kneading should be plastically processed in the original high temperature state without cooling. The plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T-die extrusion method, a screw die extrusion method, a roll pressing method, a roll kneading method, a pneumatic extrusion method, a co-extrusion method, and a calender molding method. The plastic working temperature is preferably above the softening point of each of the above components, and considering the thermosetting property and formability of the epoxy resin, for example, 40 to 150 ° C, and preferably 50 to 140 ° C, and more preferably 70 to 120 ° C. .

可藉由塗布方式製造密封片23。例如，製作含有前述各成分之接著劑組成物溶液，且塗布接著劑組成物溶液在基板分離件上成為預定厚度而形成塗布膜後，使塗布膜乾燥，藉此製造密封片23。 The sealing sheet 23 can be manufactured by coating. For example, a solution of the adhesive composition containing the above-mentioned respective components is prepared, and a coating film is formed on the substrate separator to have a predetermined thickness to form a coating film, and then the coating film is dried to produce the sealing sheet 23.

接著劑組成物溶液使用之溶劑沒有特別限制，但是以可均一地溶解、混練或分散前述各成分之有機溶劑 為佳。可舉例如：二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮、丙酮、甲基乙基酮、環己酮等之酮系溶劑，甲苯，二甲苯等。 The solvent used in the subsequent composition solution is not particularly limited, but is an organic solvent which can uniformly dissolve, knead or disperse the above components. It is better. For example, a ketone solvent such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone or cyclohexanone, toluene or xylene may be mentioned.

基板分離件可使用藉由聚對苯二甲酸乙二酯(PET)、聚乙烯、聚丙烯、氟系剝離劑、及長鏈烷基丙烯酸酯系剝離劑等之剝離劑表面塗布後之塑膠薄膜或紙等。接著劑組成物溶液之塗布方法可舉輥塗、噴塗、凹版塗布等為例。又，塗布膜之乾燥條件沒有特別限制，例如，可在乾燥溫度70至160℃，乾燥時間1至5分鐘下進行。 The substrate separator may be a plastic film coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine-based release agent, or a long-chain alkyl acrylate release agent. Or paper, etc. The coating method of the subsequent composition solution may be, for example, roll coating, spray coating, gravure coating or the like. Further, the drying conditions of the coating film are not particularly limited, and for example, it can be carried out at a drying temperature of 70 to 160 ° C and a drying time of 1 to 5 minutes.

密封片23之厚度沒有特別限制，但是宜在100μm以上，且以150μm以上更佳。又，密封片23之厚度宜在2000μm以下，且以1000μm以下更佳。在上述範圍內時，可良好地密封電子元件22。 The thickness of the sealing sheet 23 is not particularly limited, but is preferably 100 μm or more, and more preferably 150 μm or more. Further, the thickness of the sealing sheet 23 is preferably 2000 μm or less, and more preferably 1000 μm or less. When it is within the above range, the electronic component 22 can be well sealed.

密封片23可為單層構造，亦可為積層2以上之密封片之多層構造，但是由無層間剝離之虞且片厚度均一性高之理由來看，以單層構造為佳。 The sealing sheet 23 may have a single-layer structure or a multilayer structure in which two or more sealing sheets are laminated. However, it is preferable to use a single-layer structure for the reason that the interlayer is not peeled off and the sheet thickness is uniform.

如上所述，實施形態1之密封方法例如包含以下步驟：在配置於基板21上之電子元件22上依序配置密封片23及脫模薄膜24；在減壓環境下，以脫模薄膜24覆蓋基板21、電子元件22及密封片23，形成藉由脫模薄膜24密閉之密閉空間；及，利用使密閉空間外部之壓力比密閉空間內部高而產生之差力差，以密封片23密封電子元件22。又，實施形態1之密封方法依需要更包含一使頂板17由脫模薄膜24之上方下降，透過脫模薄膜24加壓電子元件封裝體之 步驟。 As described above, the sealing method of the first embodiment includes, for example, the steps of disposing the sealing sheet 23 and the release film 24 on the electronic component 22 disposed on the substrate 21, and covering the release film 24 under a reduced pressure environment. The substrate 21, the electronic component 22, and the sealing sheet 23 form a sealed space sealed by the release film 24, and the difference in force generated by making the pressure outside the sealed space higher than the inside of the sealed space is used to seal the electrons with the sealing sheet 23. Element 22. Further, the sealing method according to the first embodiment further includes a step of lowering the top plate 17 from above the release film 24 and pressurizing the electronic component package through the release film 24. step.

[實施形態2] [Embodiment 2]

實施形態2與實施形態1不同點在於使用密封片23及脫模薄膜24形成一體之附密封片之脫模薄膜31，及在減壓真空腔室內後使密封片23與電子元件22接觸。又，在實施形態2之說明中，與實施形態1重覆之內容省略。 The second embodiment differs from the first embodiment in that the sealing sheet 23 and the release film 24 are used to form an integral release film 31 with a sealing sheet, and the sealing sheet 23 is brought into contact with the electronic component 22 after being evacuated in the vacuum chamber. Further, in the description of the second embodiment, the contents overlapping with the first embodiment are omitted.

(準備步驟) (preparation step)

首先，準備在脫模薄膜24上積層有密封片23之附密封片之脫模薄膜31。 First, a release film 31 having a sealing sheet with a sealing sheet 23 laminated on the release film 24 is prepared.

在附密封片之脫模薄膜31中，密封片23與脫模薄膜24之密接力宜為0.1N/20mm以下。0.1N/20mm以下時，可由密封片23良好地剝離脫模薄膜24。 In the release film 31 with a sealing sheet, the adhesion between the sealing sheet 23 and the release film 24 is preferably 0.1 N/20 mm or less. When it is 0.1 N/20 mm or less, the release film 24 can be favorably peeled off by the sealing sheet 23.

又，密封片23與脫模薄膜24之密接力可藉由實施例記載之方法測量。 Further, the adhesion between the sealing sheet 23 and the release film 24 can be measured by the method described in the examples.

(配置步驟) (configuration steps)

如圖7所示，在平台7上載置裝載有電子元件22之基板21，接著固定附密封片之脫模薄膜31在框狀推壓部13a上。因此，可在電子元件22與附密封片之脫模薄膜31之間設置間隙。又，亦可在固定附密封片之脫模薄膜31在框狀推壓部13a上後，在平台7上載置裝載有電子元件22之基板21。 As shown in Fig. 7, the substrate 21 on which the electronic component 22 is mounted is placed on the stage 7, and then the release film 31 to which the sealing sheet is attached is placed on the frame-like pressing portion 13a. Therefore, a gap can be provided between the electronic component 22 and the release film 31 with the sealing sheet. Further, after the release film 31 to which the sealing sheet is attached is placed on the frame-like pressing portion 13a, the substrate 21 on which the electronic component 22 is mounted may be placed on the stage 7.

固定附密封片之脫模薄膜31在框狀推壓部13a上之方法沒有特別限制，可舉例如：使用具備有用以握持附密封片之脫模薄膜31之握持裝置的框狀推壓部13a，藉握持裝置握持附密封片之脫模薄膜31的方法；及，透過黏著劑 將附密封片之脫模薄膜31黏貼在框狀推壓部13a下面的方法等。 The method of fixing the release film 31 with the sealing sheet to the frame-shaped pressing portion 13a is not particularly limited, and for example, a frame-like pressing using a holding device having a release film 31 for holding the sealing sheet is used. a portion 13a, a method of holding the release film 31 with the sealing sheet by the holding device; and, through the adhesive A method of adhering the release film 31 with a sealing sheet to the lower surface of the frame-shaped pressing portion 13a.

(真空隔壁形成步驟) (vacuum partition forming step)

圖8係示意性顯示藉由上加熱板11、上框構件12及下板構件6形成真空隔壁之情形的圖。如圖8所示，藉由加壓缸14使上加熱板11下降，令上框構件12之下端部在下板構件6之外緣部之段差上氣密地滑動而形成真空隔壁。又，在附密封片之脫模薄膜31接觸電子元件22之前，停止上加熱板11之下降。 Fig. 8 is a view schematically showing a state in which a vacuum partition wall is formed by the upper heating plate 11, the upper frame member 12, and the lower plate member 6. As shown in Fig. 8, the upper heating plate 11 is lowered by the pressurizing cylinder 14, and the lower end portion of the upper frame member 12 is hermetically slid in the step of the outer edge portion of the lower plate member 6, thereby forming a vacuum partition wall. Further, before the release film 31 with the sealing sheet contacts the electronic component 22, the lowering of the upper heating plate 11 is stopped.

(抽真空步驟) (vacuum step)

在抽真空步驟中，進行抽真空，且使真空腔室內成為減壓狀態(以真空狀態為佳)後，加熱脫模薄膜24及密封片23，使其軟化。又，脫模薄膜24及密封片23之加熱亦可在抽真空前、在抽真空中進行。 In the vacuuming step, vacuuming is performed, and the vacuum chamber is brought into a reduced pressure state (preferably in a vacuum state), and then the release film 24 and the sealing sheet 23 are heated and softened. Further, the heating of the release film 24 and the sealing sheet 23 may be performed before vacuuming and under vacuum.

脫模薄膜24及密封片23之加熱溫度宜為50℃至150℃。 The heating temperature of the release film 24 and the sealing sheet 23 is preferably from 50 ° C to 150 ° C.

(接觸步驟) (contact step)

在該步驟中，使上加熱板11下降，且使密封片23與電子元件22接觸。在該步驟中，使真空腔室內成為減壓狀態後，使密封片23與電子元件22接觸，因此可防止空孔進入密封片23與電子元件22之間，及空孔進入密封片23與基板21之間。連續密封電子元件封裝體時，真空熱加壓裝置內為高溫且空孔容易進入，但是在該步驟中，可防止空孔進入，因此可連續運轉，且可提高生產性。 In this step, the upper heating plate 11 is lowered, and the sealing sheet 23 is brought into contact with the electronic component 22. In this step, after the vacuum chamber is brought into a reduced pressure state, the sealing sheet 23 is brought into contact with the electronic component 22, so that the void can be prevented from entering between the sealing sheet 23 and the electronic component 22, and the void enters the sealing sheet 23 and the substrate. Between 21 . When the electronic component package is continuously sealed, the inside of the vacuum heat pressurizing device is high in temperature and the holes are easily entered. However, in this step, the holes can be prevented from entering, so that continuous operation can be performed and productivity can be improved.

(密閉空間形成步驟) (Confined space forming step)

如圖9所示，使上加熱板11進一步下降，且藉由內構件13下端部之下面，推壓脫模薄膜24在平台7上，並且以脫模薄膜24覆蓋基板21、電子元件22及密封片23。因此，形成收容基板21、電子元件22及密封片23之密閉空間。又，由於使真空腔室成為減壓狀態後形成密閉空間，故密閉空間之內部及外部呈減壓狀態。 As shown in FIG. 9, the upper heating plate 11 is further lowered, and the release film 24 is pushed onto the platform 7 by the lower surface of the lower end portion of the inner member 13, and the substrate 21, the electronic component 22, and the release film 24 are covered. Sealing sheet 23. Therefore, a sealed space in which the substrate 21, the electronic component 22, and the sealing sheet 23 are housed is formed. Further, since the vacuum chamber is in a reduced pressure state and a sealed space is formed, the inside and the outside of the sealed space are in a reduced pressure state.

又，在接觸步驟及密閉空間形成步驟中，上加熱板11之下降可為一連串之動作，亦可為斷續之動作。 Further, in the contacting step and the sealing space forming step, the lowering of the upper heating plate 11 may be a series of operations or an intermittent operation.

(密封步驟) (sealing step)

如圖10所示，透過真空、加壓口16將氣體導入真空腔室，使密閉空間外部之壓力比密閉空間內部高，且推壓密封片23在電子元件22上。因此，可獲得藉由密封片23密封電子元件22之電子元件封裝體。氣體沒有特別限制，可舉空氣、氮氣為例。又，氣體壓力沒有特別限制，但是以大氣壓以上為佳。藉由導入氣體，可提高密閉空間外部壓力至大氣壓以上。 As shown in FIG. 10, the gas is introduced into the vacuum chamber through the vacuum and the pressure port 16, so that the pressure outside the sealed space is higher than the inside of the sealed space, and the sealing sheet 23 is pressed against the electronic component 22. Therefore, the electronic component package in which the electronic component 22 is sealed by the sealing sheet 23 can be obtained. The gas is not particularly limited, and examples of air and nitrogen are exemplified. Further, the gas pressure is not particularly limited, but it is preferably at least atmospheric pressure. By introducing a gas, the external pressure in the sealed space can be increased to above atmospheric pressure.

如圖11所示，亦可在導入氣體後，使頂板17下降，透過脫模薄膜24加壓電子元件封裝體，藉此使電子元件封裝體之脫模薄膜24側的面平坦化。因此，可使電子元件封裝體之厚度均一化。加壓之壓力宜為0.5至20kgf/cm2。 As shown in FIG. 11, after the gas is introduced, the top plate 17 may be lowered, and the electronic component package may be pressed through the release film 24, thereby flattening the surface of the electronic component package on the release film 24 side. Therefore, the thickness of the electronic component package can be made uniform. The pressure for pressurization is preferably from 0.5 to 20 kgf/cm 2 .

(其他步驟) (other steps)

可在電子元件封裝體上形成再配線，及凸塊等。又，亦可切割電子元件封裝體使其晶片化。 Rewiring, bumps, and the like can be formed on the electronic component package. Further, the electronic component package can be cut to be wafer-formed.

如上所述，實施形態2之密封方法包含以下步驟：準備附密封片之脫模薄膜31，該附密封片之脫模薄膜31係在脫模薄膜24上積層有密封片23者；在配置於基板21上之電子元件22上，與電子元件22間空出間隙地配置附密封片之脫模薄膜31；在減壓環境下，令附密封片之脫模薄膜31下降，使密封片23與電子元件22接觸；使附密封片之脫模薄膜31進一步下降，以脫模薄膜24覆蓋基板21、電子元件22及密封片23，形成藉由脫模薄膜24密閉之密閉空間；及，利用使密閉空間外部之壓力比密閉空間內部高而產生之差力差，以密封片23密封電子元件22。又，實施形態2之密封方法依需要更包含一使頂板17由脫模薄膜24之上方下降，透過脫模薄膜24加壓電子元件封裝體之步驟。 As described above, the sealing method of the second embodiment includes the steps of preparing a release film 31 with a sealing sheet, and the release film 31 of the sealing sheet is formed by laminating the sealing sheet 23 on the release film 24; A release film 31 with a sealing sheet is disposed on the electronic component 22 on the substrate 21 with a gap between the electronic component 22; in a reduced pressure environment, the release film 31 with the sealing sheet is lowered to cause the sealing sheet 23 to The electronic component 22 is in contact with each other; the release film 31 with the sealing sheet is further lowered, and the substrate 21, the electronic component 22, and the sealing sheet 23 are covered with the release film 24 to form a sealed space sealed by the release film 24; The pressure outside the sealed space is higher than the difference in the inside of the sealed space, and the electronic component 22 is sealed by the sealing sheet 23. Further, the sealing method according to the second embodiment further includes a step of lowering the top plate 17 from above the release film 24 and pressing the electronic component package through the release film 24.

又，雖然實施形態1及實施形態2顯示在基板21上配置一個電子元件22之情形，但是電子元件22之個數沒有特別限制，亦可為多數。 Further, although the first embodiment and the second embodiment show the case where one electronic component 22 is placed on the substrate 21, the number of the electronic components 22 is not particularly limited, and may be plural.

實施形態1係在密封片23上裝載脫模薄膜24，但是在變形例中，例如，如日本專利第5189194號公報之圖4(a)及(b)所示，亦可固定脫模薄膜24在內框體13之下端部。 In the first embodiment, the release film 24 is placed on the sealing sheet 23, but in the modification, for example, as shown in Figs. 4(a) and (b) of Japanese Patent No. 5189194, the release film 24 can be fixed. At the lower end of the inner frame body 13.

在實施形態1中，脫模薄膜24亦可藉由如日本專利第5189194號公報之圖5(a)至(d)所示之脫模薄膜夾持夾具配置在預定位置上。 In the first embodiment, the release film 24 can also be disposed at a predetermined position by a release film holding jig as shown in Figs. 5(a) to (d) of Japanese Patent No. 5189194.

在實施形態1中，亦可使用附密封片之脫模薄膜31，取代密封片23及脫模薄膜24。 In the first embodiment, a release film 31 with a sealing sheet may be used instead of the sealing sheet 23 and the release film 24.

[實施形態3] [Embodiment 3]

(半導體封裝體105之製造方法) (Method of Manufacturing Semiconductor Package 105)

接著，說明半導體封裝體105之製造方法。 Next, a method of manufacturing the semiconductor package 105 will be described.

如圖12所示，在平台7上配置積層構造體101。積層構造體101具備晶片暫時固定體51、配置在晶片暫時固定體51上之密封片23及配置在密封片23上之脫模薄膜24。 As shown in FIG. 12, the laminated structure 101 is placed on the stage 7. The laminated structure 101 includes a wafer temporary fixing body 51, a sealing sheet 23 disposed on the wafer temporary fixing body 51, and a release film 24 disposed on the sealing sheet 23.

如圖13所示，晶片暫時固定體51具備載體51a、配置在載體51a上之黏著劑51b及固定在黏著劑51b上之半導體晶片51c。 As shown in FIG. 13, the wafer temporary fixing body 51 is provided with a carrier 51a, an adhesive 51b disposed on the carrier 51a, and a semiconductor wafer 51c fixed to the adhesive 51b.

載體51a可舉金屬板、塑膠板為例。載體51a之材料可舉例如：SUS等之金屬材料、聚醯亞胺、聚醯胺醯亞胺、聚醚醚酮、聚醚碸等之塑膠材料。 The carrier 51a can be exemplified by a metal plate or a plastic plate. The material of the carrier 51a may, for example, be a metal material such as SUS, a plastic material such as polyimine, polyamidamine, polyether ether ketone or polyether oxime.

黏著劑51b沒有特別限制，但是由可容易剝離之理由來看，通常使用熱發泡性黏著劑等之熱剝離性黏著劑等。 The adhesive agent 51b is not particularly limited, but a heat-peelable adhesive such as a heat-expandable pressure-sensitive adhesive or the like is usually used for the reason that it can be easily peeled off.

半導體晶片51c具備電極墊151c。設有電極墊151c之電路形成面251c與黏著劑51b連接。 The semiconductor wafer 51c is provided with an electrode pad 151c. The circuit forming surface 251c provided with the electrode pad 151c is connected to the adhesive 51b.

密封片23之外形尺寸係可密封半導體晶片51c之大小。 The outer shape of the sealing sheet 23 is sized to seal the size of the semiconductor wafer 51c.

脫模薄膜24具備與密封片23連接之中央部24a及配置在中央部24a周邊之周邊部24b。脫模薄膜24之外形尺寸係可覆蓋晶片暫時固定體51及密封片23之大小。 The release film 24 includes a central portion 24a that is connected to the sealing sheet 23, and a peripheral portion 24b that is disposed around the central portion 24a. The outer shape of the release film 24 can cover the size of the wafer temporary fixing body 51 and the sealing sheet 23.

平台7被預先加熱。平台7之溫度宜為70℃以上，且以80℃以上更佳，並且85℃以上又更佳。70℃以上 時，可使密封片23熔融、流動。平台7之溫度宜為100℃以下，且以95℃以下更佳。100℃以下時，可抑制硬化反應而成型。 The platform 7 is preheated. The temperature of the stage 7 is preferably 70 ° C or more, more preferably 80 ° C or more, and more preferably 85 ° C or more. Above 70 ° C At this time, the sealing sheet 23 can be melted and flowed. The temperature of the stage 7 is preferably 100 ° C or less, and more preferably 95 ° C or less. When it is 100 ° C or less, it can be molded by suppressing the hardening reaction.

如圖14所示，令上加熱板11及上框構件12下降，使上框構件12之下端部沿下板構件6之外緣部氣密地滑動，形成一藉由上加熱板11、上框構件12及下板構件6氣密地包圍之真空腔室。即，形成一具備上加熱板11、上框構件12及下板構件6之收納容器。在形成真空腔室之階段，停止上加熱板11及上框構件12之下降。 As shown in FIG. 14, the upper heating plate 11 and the upper frame member 12 are lowered, and the lower end portion of the upper frame member 12 is hermetically slid along the outer edge portion of the lower plate member 6, thereby forming an upper heating plate 11 and upper. The frame member 12 and the lower plate member 6 are airtightly surrounded by the vacuum chamber. That is, a storage container including the upper heating plate 11, the upper frame member 12, and the lower plate member 6 is formed. At the stage of forming the vacuum chamber, the lowering of the upper heating plate 11 and the upper frame member 12 is stopped.

接著，進行抽真空，且使真空腔室內成為減壓狀態。真空腔室內之壓力宜為500Pa以下。 Next, evacuation is performed, and the vacuum chamber is brought into a reduced pressure state. The pressure in the vacuum chamber should be 500 Pa or less.

如圖15所示，藉由使框狀推壓部13a下降，推壓脫模薄膜24之周邊部24b在平台7上，且形成密閉容器121。密閉容器121具備平台7及脫模薄膜24。密閉容器121之內部配置有晶片暫時固定體51及配置在晶片暫時固定體51上之密封片23。又，由於使真空腔室形成減壓狀態後形成密閉容器121，故密閉容器121之內部及外部呈減壓狀態。 As shown in Fig. 15, by lowering the frame-shaped pressing portion 13a, the peripheral portion 24b of the release film 24 is pressed against the stage 7, and the sealed container 121 is formed. The hermetic container 121 is provided with the stage 7 and the release film 24. Inside the sealed container 121, a wafer temporary fixing body 51 and a sealing sheet 23 disposed on the wafer temporary fixing body 51 are disposed. Further, since the sealed chamber 121 is formed after the vacuum chamber is decompressed, the inside and the outside of the sealed container 121 are in a reduced pressure state.

如圖16所示，藉由開放真空、加壓口116，使真空腔室內之壓力為大氣壓。即，使密閉容器121外部之壓力為大氣壓。 As shown in Fig. 16, the pressure in the vacuum chamber is atmospheric pressure by opening the vacuum and the pressure port 116. That is, the pressure outside the sealed container 121 is atmospheric pressure.

如圖17所示，藉由將氣體導入真空、加壓口116，提高真空腔室內之壓力。即，使密閉容器121外部之壓力比大氣壓高。藉此，以密封片23覆蓋半導體晶片51c，獲得密封體61。 As shown in Fig. 17, the pressure in the vacuum chamber is increased by introducing a gas into the vacuum and pressurizing port 116. That is, the pressure outside the sealed container 121 is made higher than the atmospheric pressure. Thereby, the semiconductor wafer 51c is covered with the sealing sheet 23, and the sealing body 61 is obtained.

氣體沒有特別限制，可舉空氣、氮氣為例。 The gas is not particularly limited, and examples of air and nitrogen are exemplified.

氣體導入後之密閉容器121外部之壓力宜為0.1MPa以上，且以0.5MPa以上更佳，並且0.9MPa以上又更佳。密閉容器121外部之壓力之上限沒有特別限制，但是宜為5MPa以下，且以3MPa以下更佳。 The pressure outside the sealed container 121 after the introduction of the gas is preferably 0.1 MPa or more, more preferably 0.5 MPa or more, and still more preferably 0.9 MPa or more. The upper limit of the pressure outside the sealed container 121 is not particularly limited, but is preferably 5 MPa or less, and more preferably 3 MPa or less.

密封體61具備半導體晶片51c及覆蓋半導體晶片51c之樹脂部61a。密封體61與黏著劑51b連接。又，密封體61與脫模薄膜24連接。 The sealing body 61 includes a semiconductor wafer 51c and a resin portion 61a that covers the semiconductor wafer 51c. The sealing body 61 is connected to the adhesive 51b. Further, the sealing body 61 is connected to the release film 24.

如圖18所示，在密封體61旁配置分離件131。 As shown in FIG. 18, a separator 131 is disposed beside the sealing body 61.

如圖19所示，藉由使頂板17下降到抵靠分離件131，按壓密封體61，且調整密封體61之厚度。藉此，可使密封體61之厚度均一化。藉頂板17推壓密封體61時之壓力宜為0.5kgf/cm2至20kgf/cm2。 As shown in FIG. 19, by lowering the top plate 17 against the separating member 131, the sealing body 61 is pressed, and the thickness of the sealing body 61 is adjusted. Thereby, the thickness of the sealing body 61 can be made uniform. The pressure at which the sealing member 61 is pushed by the top plate 17 is preferably from 0.5 kgf/cm 2 to 20 kgf/cm 2 .

接著，移除配置在密封體61上之脫模薄膜24。 Next, the release film 24 disposed on the sealing body 61 is removed.

接著，切除樹脂部61a中由載體51a露出側方之部份。 Next, the portion of the resin portion 61a from which the side is exposed by the carrier 51a is cut.

接著，藉加熱密封體61使樹脂部61a硬化，形成硬化體71。 Next, the resin portion 61a is cured by the heat sealing body 61 to form the cured body 71.

加熱溫度宜為100℃以上，且以120℃以上更佳。另一方面，加熱溫度之上限宜為200℃以下，且以180℃以下更佳。加熱時間宜為10分以上，且以30分以上更佳。另一方面，加熱時間之上限宜為180分以下，且以120分以下更佳。 The heating temperature is preferably 100 ° C or more, and more preferably 120 ° C or more. On the other hand, the upper limit of the heating temperature is preferably 200 ° C or lower, and more preferably 180 ° C or lower. The heating time is preferably 10 minutes or more, and more preferably 30 minutes or more. On the other hand, the upper limit of the heating time is preferably 180 or less, and more preferably 120 or less.

如圖20所示，硬化體71具備半導體晶片51c及覆 蓋半導體晶片51c之保護部71a。硬化體71與黏著劑51b連接。硬化體71可藉由具備電路形成面251c之第1主面及對向於第1表面之第2主面定義兩面。 As shown in FIG. 20, the hardened body 71 is provided with a semiconductor wafer 51c and a cover. The protective portion 71a of the semiconductor wafer 51c is covered. The hardened body 71 is connected to the adhesive 51b. The hardened body 71 can define both surfaces by the first main surface including the circuit forming surface 251c and the second main surface facing the first surface.

加熱黏著劑51b而使黏著劑51b之黏著力降低。 The adhesive 51b is heated to lower the adhesive force of the adhesive 51b.

如圖21所示，由硬化體71剝離黏著劑51b。 As shown in FIG. 21, the adhesive 51b is peeled off by the hardened body 71.

接著，藉由使硬化體71吸附在吸附台上，固定硬化體71在吸附台上。 Next, the cured body 71 is fixed on the adsorption stage by adsorbing the hardened body 71 on the adsorption stage.

如圖22所示，在第1主面上形成緩衝塗膜141。緩衝塗膜141可使用感光性之聚醯亞胺、感光性之聚苯并唑(PBO)等。 As shown in FIG. 22, a buffer coating film 141 is formed on the first main surface. The buffer coating film 141 can use photosensitive polyimide, photosensitive polyphenylene Oxazole (PBO) and the like.

如圖23所示，在緩衝塗膜141上配置有遮罩142之狀態下，藉由曝光、顯影、蝕刻，在緩衝塗膜141上形成開口，使電極墊151c露出。 As shown in FIG. 23, in a state where the mask 142 is placed on the buffer coating film 141, an opening is formed in the buffer coating film 141 by exposure, development, and etching, and the electrode pad 151c is exposed.

接著，如圖24所示，去除遮罩142。 Next, as shown in FIG. 24, the mask 142 is removed.

接著，在緩衝塗膜141及電極墊151c上，形成晶種層。 Next, a seed layer is formed on the buffer coating film 141 and the electrode pad 151c.

如圖25所示，在晶種層上形成抗蝕層143。 As shown in FIG. 25, a resist layer 143 is formed on the seed layer.

如圖26所示，藉由電解銅鍍敷等鍍敷法，在晶種層上形成鍍敷圖案144。 As shown in FIG. 26, a plating pattern 144 is formed on the seed layer by a plating method such as electrolytic copper plating.

如圖27所示，去除抗蝕層143。接著，藉由蝕刻晶種層形成再配線145。 As shown in FIG. 27, the resist layer 143 is removed. Next, the rewiring 145 is formed by etching the seed layer.

如圖28所示，在再配線145上形成保護膜146。保護膜146可使用感光性之聚醯亞胺、感光性之聚苯并唑(PBO)等。 As shown in FIG. 28, a protective film 146 is formed on the rewiring 145. The protective film 146 can use photosensitive polyimide, photosensitive polyphenylene Oxazole (PBO) and the like.

如圖29所示，藉由在保護膜146形成開口，獲得再配線體104。再配線體104具備硬化體71及配置在硬化體71上之再配線層140。再配線層140包含再配線145。 As shown in FIG. 29, the rewiring body 104 is obtained by forming an opening in the protective film 146. The rewiring body 104 includes a cured body 71 and a rewiring layer 140 disposed on the cured body 71. The rewiring layer 140 includes rewiring 145.

如圖30所示，在再配線145上形成電極(UBM：Under Bump Metal，凸塊底層金屬)147。 As shown in FIG. 30, an electrode (UBM: Under Bump Metal) 147 is formed on the rewiring 145.

如圖31所示，在電極147上形成凸塊148。凸塊148透過電極147及再配線145與電極墊151c電性連接。 As shown in FIG. 31, bumps 148 are formed on the electrodes 147. The bump 148 is electrically connected to the electrode pad 151c through the electrode 147 and the rewiring 145.

如圖32所示，將再配線體104單片化(切割)而獲得半導體封裝體105。 As shown in FIG. 32, the rewiring body 104 is diced (cut) to obtain a semiconductor package 105.

藉由以上步驟，可獲得拉出配線至晶片區域外側之半導體封裝體105。 By the above steps, the semiconductor package 105 that pulls the wiring to the outside of the wafer region can be obtained.

(變形例1) (Modification 1)

在實施形態3中，在平台7上配置積層構造體101，但是在變形例1中，在平台7上配置晶片暫時固定體51，接著在晶片暫時固定體51上配置密封片23，然後在密封片23上配置脫模薄膜24。 In the third embodiment, the laminated structure 101 is placed on the stage 7. However, in the first modification, the wafer temporary fixing body 51 is placed on the stage 7, and then the sealing sheet 23 is placed on the wafer temporary fixing body 51, and then sealed. A release film 24 is disposed on the sheet 23.

(變形例2) (Modification 2)

實施形態3中，係在平台7上配置積層構造體101，但是變形例2中，係在平台7上配置具備晶片暫時固定體51及配置在晶片暫時固定體51上之密封片23的積層物，接著在積層物上配置脫模薄膜24。 In the third embodiment, the laminated structure 101 is disposed on the stage 7, but in the second modification, the laminate including the wafer temporary fixing body 51 and the sealing sheet 23 disposed on the wafer temporary fixing body 51 is disposed on the stage 7. Then, the release film 24 is placed on the laminate.

(變形例3) (Modification 3)

在實施形態3中，使密閉容器121外部之壓力成為大氣壓，接著使其比大氣壓高，但是在變形例3中，不包含使密 閉容器121外部之壓力成為大氣壓之步驟。即，形成密閉容器121，接著使密閉容器121外部之壓力比大氣壓高。 In the third embodiment, the pressure outside the sealed container 121 is made to be atmospheric pressure, and then it is higher than the atmospheric pressure. However, in the third modification, the density is not included. The pressure outside the closed vessel 121 becomes a step of atmospheric pressure. That is, the sealed container 121 is formed, and then the pressure outside the sealed container 121 is made higher than the atmospheric pressure.

(變形例4) (Modification 4)

在實施形態3中，藉由頂板117按壓密封體61，但是在變形例4中不按壓密封體61。 In the third embodiment, the sealing body 61 is pressed by the top plate 117, but the sealing body 61 is not pressed in the fourth modification.

(變形例6) (Modification 6)

在變形例6中，包含研磨硬化體71之第2主面之步驟。 In the sixth modification, the step of polishing the second main surface of the hardened body 71 is included.

(變形例7) (Modification 7)

變形例7與實施形態3不同點在於更包含藉由在減壓環境下在晶片暫時固定體51上配置附密封片之脫模薄膜31，形成積層構造體101之步驟。變形例7除了將附元件之基板42變更為晶片暫時固定體51以外，與實施形態2之配置步驟、真空隔壁步驟、抽真空步驟及接觸步驟相同，故省略說明。 The modification 7 differs from the third embodiment in that a step of forming the laminated structure 101 by disposing the release film 31 with a sealing sheet on the wafer temporary fixing body 51 under a reduced pressure environment is further included. The modification 7 is the same as the arrangement step of the second embodiment, the vacuum partitioning step, the vacuuming step, and the contacting step except that the substrate 42 with the component is changed to the wafer temporary fixing body 51, and thus the description thereof is omitted.

如上所述，實施形態3之半導體封裝體105之製造方法包含以下步驟：藉由推壓積層構造體101之周邊部24b在與載體51a連接之平台7上，形成具備平台7及脫模薄膜24之密閉容器121；及，使密閉容器121外部之壓力比密閉容器121內部之壓力高，以藉密封片23覆蓋半導體晶片51c。 As described above, the method of manufacturing the semiconductor package 105 of the third embodiment includes the step of forming the stage 7 and the release film 24 on the stage 7 connected to the carrier 51a by pressing the peripheral portion 24b of the laminated structure 101. The sealed container 121; and the pressure outside the sealed container 121 is higher than the pressure inside the sealed container 121, so that the semiconductor wafer 51c is covered by the sealing sheet 23.

實施形態3之半導體封裝體105之製造方法更包含以下諸步驟：藉由加熱密封體61形成硬化體71；藉由在硬化體71上形成再配線層140形成再配線體104；及，藉由切割再配線體104獲得半導體封裝體105。 The method of manufacturing the semiconductor package 105 of the third embodiment further includes the steps of: forming the hardened body 71 by heating the sealing body 61; forming the rewiring body 104 by forming the rewiring layer 140 on the hardened body 71; The rewiring body 104 is cut to obtain the semiconductor package 105.

[其他實施形態] [Other Embodiments]

雖然實施形態3舉例說明半導體封裝體之製造方法及半導體晶片之密封方法，但是所屬技術領域中具有通常知識者可輕易理解第2本發明可適用於半導體封裝體之製造方法及半導體晶片之密封方法。 Although the third embodiment exemplifies the manufacturing method of the semiconductor package and the sealing method of the semiconductor wafer, those skilled in the art can easily understand that the second invention can be applied to the manufacturing method of the semiconductor package and the sealing method of the semiconductor wafer. .

實施例 Example

以下舉例說明地詳細說明本發明之較佳實施例。但是，該實施例記載之材料及混合量等不限於特別限定之記載，且不是該發明範圍只限定於該等之意思。 The preferred embodiments of the present invention are described in detail below by way of illustration. However, the materials, the mixing amounts, and the like described in the examples are not limited to the specific definitions, and the scope of the invention is not limited to these.

說明混合於密封片中之成分。 The ingredients mixed in the sealing sheet are explained.

環氧樹脂：新日鐵化學(股)製之YSLV-80XY(雙酚F型環氧樹脂，環氧當量200g/eq.，軟化點80℃) Epoxy resin: YSLV-80XY (bisphenol F type epoxy resin, epoxy equivalent 200g/eq., softening point 80 °C) made by Nippon Steel Chemical Co., Ltd.

酚樹脂：明和化成公司製之MEH-7851-SS(具有聯苯芳烷基骨架之酚樹脂，羥基當量203g/eq.，軟化點67℃) Phenol resin: MEH-7851-SS manufactured by Minghe Chemical Co., Ltd. (phenol resin with biphenyl aralkyl skeleton, hydroxyl equivalent 203 g/eq., softening point 67 ° C)

硬化促進劑：四國化成工業公司製之2PHZ-PW(2-苯基-4,5-二羥甲基咪唑) Hardening accelerator: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Chemical Industry Co., Ltd.

熱可塑性樹脂：MITSUBISHI RAYON公司製之Metablen J-5800(核殼型丙烯酸樹脂，平均粒徑1μm) Thermoplastic resin: Metablen J-5800 (core-shell type acrylic resin, average particle size 1 μm) manufactured by MITSUBISHI RAYON Co., Ltd.

二氧化矽填料-1：電氣化學工業公司製之FB-9454FC(熔融球狀二氧化矽，平均粒徑20μm) Ceria Filler-1: FB-9454FC manufactured by Electrochemical Industry Co., Ltd. (melted spherical ceria, average particle size 20 μm)

二氧化矽填料-2：ADMATCHS公司製之SO-25R(熔融球狀二氧化矽，平均粒徑0.5μm) Ceria Filler-2: SO-25R manufactured by ADMATCHS Co., Ltd. (melted spherical ceria, average particle size 0.5 μm)

矽烷耦合劑：信越化學公司製之KBM-503(3-甲基丙烯醯氧基丙基三甲氧矽烷) 矽Case coupling agent: KBM-503 (3-methacryloxypropyltrimethoxy decane) manufactured by Shin-Etsu Chemical Co., Ltd.

碳黑：三菱化學公司製之MA-600 Carbon black: MA-600 made by Mitsubishi Chemical Corporation

[實施例1至3及比較例2至3] [Examples 1 to 3 and Comparative Examples 2 to 3]

依據表1記載之混合比，混合各成分，且藉由輥混練機在60至120℃、10分鐘、減壓條件下(0.01kg/cm2)熔融混練，調製混練物。接著，藉由平板按壓法，將製得之混練物形成片狀，製作厚度500μm之密封片。 Each component was mixed according to the mixing ratio described in Table 1, and the kneaded product was prepared by melt-kneading at 60 to 120 ° C for 10 minutes under reduced pressure (0.01 kg/cm 2 ) by a roll kneader. Next, the obtained kneaded material was formed into a sheet shape by a flat pressing method to prepare a sealing sheet having a thickness of 500 μm.

藉黏貼條件70℃黏貼密封片(200mm見方，厚度500μm)及脫模薄膜(三井化學公司製之TPX FILM X-88BMT4，聚-4-甲基戊烯-1，兩面壓凸，兩面未拋光，拉伸斷裂伸長率50%，軟化溫度52℃，厚度50μm)，製作附密封片之脫模薄膜。 Adhesive film 70mm square (200mm square, thickness 500μm) and release film (TPX FILM X-88BMT4, poly-4-methylpentene-1, manufactured by Mitsui Chemicals Co., Ltd., double-sided embossing, both sides are not polished, A tensile elongation at break of 50%, a softening temperature of 52 ° C, and a thickness of 50 μm were prepared to prepare a release film with a sealing sheet.

使用製得之附密封片之脫模薄膜，藉由實施形態2記載之方法製作半導體封裝體。 A semiconductor package was produced by the method described in the second embodiment using the obtained release film with a sealing sheet.

即，在平台7上，裝載搭載100個半導體晶片(半導體晶片尺寸：15mm×15mm×厚度0.3mm)之有機基板(有機基板尺寸：240mm見方，經電漿處理(350W，10秒，Ar)者)後，固定附密封片之脫模薄膜在框狀推壓部13a上。然後，使上加熱板11下降，形成收容該等之真空腔室。在常溫下抽真空到使真空腔室內為10Torr後，加熱直到附密封片之脫模薄膜達100℃為止。然後，藉由內框體13下端部之下面，推壓脫模薄膜，且形成收容有機基板、半導體晶片及密封片之密閉空間。進行環境加壓(高壓釜)使密閉空間外部之環境為5kg/cm2，且利用密閉空間內外之壓力差推壓密封片在半導體晶片上，製作成半導體封裝體。然 後，使頂板17下降，透過脫模薄膜對半導體封裝體加壓(2kgf/cm2)，使半導體封裝體之脫模薄膜側之面平坦化。 That is, an organic substrate on which 100 semiconductor wafers (semiconductor wafer size: 15 mm × 15 mm × thickness 0.3 mm) were mounted on the stage 7 (organic substrate size: 240 mm square, plasma treated (350 W, 10 seconds, Ar)) After that, the release film to which the sealing sheet is attached is placed on the frame-like pressing portion 13a. Then, the upper heating plate 11 is lowered to form a vacuum chamber for accommodating the same. After evacuating at room temperature to 10 Torr in the vacuum chamber, the film was heated until the release film of the sealing sheet reached 100 °C. Then, the release film is pressed by the lower surface of the lower end portion of the inner frame 13, and a sealed space for accommodating the organic substrate, the semiconductor wafer, and the sealing sheet is formed. The environment pressurization (autoclave) was carried out so that the environment outside the sealed space was 5 kg/cm 2 , and the sealing sheet was pressed on the semiconductor wafer by the pressure difference between the inside and outside of the sealed space to form a semiconductor package. Then, the top plate 17 is lowered, and the semiconductor package is pressurized (2 kgf/cm 2 ) through the release film to planarize the surface of the semiconductor package on the release film side.

[比較例1] [Comparative Example 1]

依據表1記載之混合比，藉由與實施例1同樣之方法製作厚度500μm之密封片。 According to the mixing ratio described in Table 1, a sealing sheet having a thickness of 500 μm was produced in the same manner as in Example 1.

除了使用製得之密封片，不使用脫模薄膜以外，藉由與實施例1同樣之方法製作半導體封裝體。 A semiconductor package was produced in the same manner as in Example 1 except that the obtained sealing sheet was used without using a release film.

[評價] [Evaluation]

對實施例及比較例之密封片、半導體封裝體、脫模薄膜進行下述之評價。結果顯示於表1中。 The sealing sheets, the semiconductor package, and the release film of the examples and the comparative examples were evaluated as follows. The results are shown in Table 1.

[複數黏度η*] [complex viscosity η*]

使用動態黏彈性測量裝置(TA INSTRUMENT公司製ARES)，測量密封片(直徑8mm，厚度500μm)之最低複數黏度η*(測量條件：升溫速度10℃/分，測量頻率1Hz及應變5%)。 The lowest complex viscosity η* of the sealing sheet (diameter 8 mm, thickness 500 μm) was measured using a dynamic viscoelasticity measuring device (ARES manufactured by TA INSTRUMENT Co., Ltd.) (measurement conditions: temperature increase rate 10 ° C / min, measurement frequency 1 Hz and strain 5%).

[密接力] [close contact]

拉伸試驗機(A&D製TENSILON)，測量由密封片之脫模薄膜剝離力(試驗片寬度：20mm，拉伸速度：300mm/分，剝離角度180度)。 A tensile tester (TENSILON manufactured by A&D) was used to measure the peeling force of the release film from the sealing sheet (test piece width: 20 mm, stretching speed: 300 mm/min, peeling angle: 180 degrees).

[拉伸斷裂伸長率] [Tensile elongation at break]

拉伸試驗機(A&D製TENSILON)，測量由密封片之脫模薄膜剝離力(試驗片寬度：10mm，夾頭間距離：10mm，拉伸速度：60mm/分)。 A tensile tester (TENSILON manufactured by A&D) was used to measure the peeling force of the release film from the sealing sheet (test piece width: 10 mm, distance between the chucks: 10 mm, and stretching speed: 60 mm/min).

[凹凸追隨性] [Concave and convex follow-up]

關於半導體封裝體，藉由超音波顯微鏡(日立製作所製FineSAT FS200II)觀察空孔是否進入晶片間及晶片側面等之凹凸部。判定進入凹凸部時為×，且未進入時為○。 With respect to the semiconductor package, it was observed by an ultrasonic microscope (FineSAT FS200II manufactured by Hitachi, Ltd.) whether or not the holes entered the uneven portions such as between the wafers and the side faces of the wafer. It is judged to be × when entering the concave and convex portion, and is ○ when not entering the concave and convex portion.

[露出] [exposed]

關於半導體封裝體，判定未由有機基板露出密封片者為○，且露出者為×。又，測量露出之距離。 Regarding the semiconductor package, it was judged that the sealing sheet was not exposed by the organic substrate, and the exposed one was ×. Also, measure the exposed distance.

在使用無機填充劑之含量小於60體積%，且最低複數黏度η*小於30Pa．S之密封片的比較例2中，確認密封片露出。又，在使用最低複數黏度η*超過3000Pa．S之密 封片的比較例3中，確認空孔進入凹凸部。 The content of the inorganic filler used is less than 60% by volume, and the lowest complex viscosity η* is less than 30Pa. In Comparative Example 2 of the sealing sheet of S, it was confirmed that the sealing sheet was exposed. Also, when using the lowest complex viscosity η* exceeds 3000Pa. S secret In Comparative Example 3 of the sealing sheet, it was confirmed that the pores entered the uneven portion.

另一方面，在使用無機填充劑之含量係60至90體積%，且顯示最低複數黏度η*之溫度係100至150℃，並且最低複數黏度η*係30至3000Pa．S之密封片的實施例1至3中，密封片未露出，且空孔亦未進入凹凸部。 On the other hand, the content of the inorganic filler used is 60 to 90% by volume, and the temperature showing the lowest complex viscosity η* is 100 to 150 ° C, and the lowest complex viscosity η * is 30 to 3000 Pa. In Examples 1 to 3 of the sealing sheet of S, the sealing sheet was not exposed, and the voids did not enter the uneven portion.

但是，在未使用脫模薄膜之比較例1中，確認密封片露出及空孔進入。 However, in Comparative Example 1 in which the release film was not used, it was confirmed that the sealing sheet was exposed and the pores entered.

又，藉實施形態1之方法製作半導體封裝體時，亦可獲得與表1同樣之結果。 Further, when the semiconductor package was produced by the method of the first embodiment, the same results as in Table 1 were obtained.

1‧‧‧基台 1‧‧‧Abutment

2‧‧‧加壓缸下板 2‧‧‧Pressure cylinder lower plate

3‧‧‧滑動移動台 3‧‧‧Sliding mobile station

4‧‧‧滑動缸 4‧‧‧Sliding cylinder

5‧‧‧下加熱板 5‧‧‧ Lower heating plate

6‧‧‧下板構件 6‧‧‧ Lower plate components

7‧‧‧基板置台(平台) 7‧‧‧Substrate placement (platform)

8‧‧‧支柱 8‧‧‧ pillar

9‧‧‧加壓缸上板 9‧‧‧Pressure cylinder upper plate

10‧‧‧中間移動構件(中間構件) 10‧‧‧Intermediate moving parts (intermediate members)

11‧‧‧上加熱板 11‧‧‧Upper heating plate

12‧‧‧上框構件 12‧‧‧Upper frame components

13‧‧‧內框體(內構件) 13‧‧‧Inner frame (internal component)

13a‧‧‧框狀推壓部 13a‧‧‧Frame pressing

13b‧‧‧桿 13b‧‧‧ rod

14‧‧‧加壓缸 14‧‧‧Pressure cylinder

15‧‧‧缸桿 15‧‧‧Cylinder rod

17‧‧‧頂板(平板) 17‧‧‧ top board (flat)

21‧‧‧基板 21‧‧‧Substrate

22‧‧‧電子元件 22‧‧‧Electronic components

24‧‧‧脫模薄膜 24‧‧‧ release film

S‧‧‧止動件 S‧‧‧stops

Claims (10)

一種電子元件之密封方法，其包含以下步驟：推壓具備附元件之基板、密封片及脫模薄膜之積層體的周邊部在與前述基板連接之平台上，藉此形成具備前述平台及前述脫模薄膜之密閉容器，又，前述附元件之基板係具備基板及配置在前述基板上之電子元件者，前述密封片係配置在前述附元件之基板上者，前述脫模薄膜係具備與前述密封片連接之中央部及配置在前述中央部周邊之周邊部者；及使前述密閉容器外部之壓力比前述密閉容器內部之壓力高，以藉前述密封片覆蓋前述電子元件；又，前述密封片含有無機填充劑；前述密封片中之前述無機填充劑之含量係60至90體積%；前述密封片按升溫速度10℃/分、測量頻率1Hz及應變5%測量下顯示最低複數黏度η*的溫度係100至150℃，且前述最低複數黏度η*係30至3000Pa．s。 A method for sealing an electronic component, comprising the steps of: pressing a peripheral portion of a laminate including a substrate with a component, a sealing sheet, and a release film on a platform connected to the substrate, thereby forming the platform and the aforementioned In the sealed container of the mold film, the substrate of the component is provided with a substrate and an electronic component disposed on the substrate, and the sealing sheet is disposed on the substrate of the component, and the release film is provided with the sealing a central portion of the sheet connection and a peripheral portion disposed around the periphery of the central portion; and a pressure higher than a pressure inside the sealed container to cover the electronic component by the sealing sheet; and the sealing sheet includes The inorganic filler; the content of the inorganic filler in the sealing sheet is 60 to 90% by volume; and the sealing sheet exhibits a temperature of the lowest complex viscosity η* measured at a temperature rising rate of 10 ° C / min, a measuring frequency of 1 Hz, and a strain of 5%. 100 to 150 ° C, and the aforementioned minimum complex viscosity η * is 30 to 3000 Pa. s. 如請求項1之電子元件之密封方法，其中前述脫模薄膜於常溫下的拉伸斷裂伸長率係30至300%。 The sealing method of the electronic component of claim 1, wherein the release film has a tensile elongation at break at room temperature of 30 to 300%. 如請求項1或2之電子元件之密封方法，其中前述密封片與前述脫模薄膜之密接力係0.1N/20mm以下。 The method of sealing an electronic component according to claim 1 or 2, wherein the sealing member and the release film have a bonding strength of 0.1 N/20 mm or less. 如請求項1之電子元件之密封方法，更包含一以下步 驟：在減壓環境下在前述附元件之基板上配置附密封片之脫模薄膜，藉此形成前述積層體，且該附密封片之脫模薄膜係具備前述脫模薄膜及積層在前述脫模薄膜上之前述密封片者。 The sealing method of the electronic component of claim 1 further includes the following steps a laminate film having a sealing sheet disposed on a substrate of the component in a reduced pressure environment, thereby forming the laminate, and the release film of the sealing sheet is provided with the release film and laminated The aforementioned sealing sheet on the molded film. 一種電子元件封裝體之製造方法，其包含以下步驟：推壓具備附元件之基板、密封片及脫模薄膜之積層體的周邊部在與前述基板連接之平台上，藉此形成具備前述平台及前述脫模薄膜之密閉容器，又，前述附元件之基板係具備前述基板及配置在前述基板上之電子元件者，前述密封片係配置在前述附元件之基板上者，前述脫模薄膜係具備與前述密封片連接之中央部及配置在前述中央部周邊之前述周邊部者；及使前述密閉容器外部之壓力比前述密閉容器內部之壓力高，以藉前述密封片覆蓋前述電子元件；又，前述密封片含有無機填充劑；前述密封片中之前述無機填充劑之含量係60至90體積%；前述密封片按升溫速度10℃/分、測量頻率1Hz及應變5%測量下顯示最低複數黏度η*的溫度係100至150℃，且前述最低複數黏度η*係30至3000Pa．s。 A method of manufacturing an electronic component package, comprising: pressing a peripheral portion of a laminate including a substrate with a component, a sealing sheet, and a release film on a platform connected to the substrate, thereby forming the platform and In the sealed container of the release film, the substrate of the component is provided with the substrate and the electronic component disposed on the substrate, and the sealing sheet is disposed on the substrate of the component, and the release film is provided a central portion connected to the sealing sheet and the peripheral portion disposed around the central portion; and a pressure higher than a pressure inside the sealed container to cover the electronic component by the sealing sheet; The sealing sheet contains an inorganic filler; the content of the inorganic filler in the sealing sheet is 60 to 90% by volume; and the sealing sheet exhibits a minimum complex viscosity measured at a temperature rising rate of 10 ° C / min, a measuring frequency of 1 Hz and a strain of 5%. The temperature of η* is 100 to 150 ° C, and the aforementioned minimum complex viscosity η* is 30 to 3000 Pa. s. 如請求項5之電子元件封裝體之製造方法，更包含一以下步驟：在減壓環境下在前述附元件之基板上配置附密封片之脫模薄膜，藉此形成前述積層體，且該附密封片 之脫模薄膜係具備前述脫模薄膜及積層在前述脫模薄膜上之前述密封片者。 The method of manufacturing the electronic component package of claim 5, further comprising the step of: disposing a release film with a sealing sheet on the substrate of the component with a reduced pressure, thereby forming the laminate, and the Sealing sheet The release film is provided with the release film and the sealing sheet laminated on the release film. 一種密封片，係供電子元件之密封方法使用者，且該電子元件之密封方法包含以下步驟：推壓具備附元件之基板、密封片及脫模薄膜之積層體的周邊部在與前述基板連接之平台上，藉此形成具備前述平台及脫模薄膜之密閉容器，又，前述附元件之基板係具備前述基板及配置在前述基板上之電子元件者，前述密封片係配置在前述附元件之基板上者，前述脫模薄膜係具備與前述密封片連接之中央部及配置在前述中央部周邊之前述周邊部者；及使前述密閉容器外部之壓力比前述密閉容器內部之壓力高，以藉前述密封片覆蓋前述電子元件；又，前述密封片含有無機填充劑，前述無機填充劑之含量係60至90體積%，按升溫速度10℃/分、測量頻率1Hz及應變5%測量下顯示最低複數黏度η*的溫度係100至150℃，且前述最低複數黏度η*係30至3000Pa．s。 A sealing sheet for a user of a sealing method for an electronic component, the method for sealing the electronic component comprising the steps of: pressing a peripheral portion of a laminate having a substrate, a sealing sheet, and a release film with an element attached to the substrate In the platform, the sealed container including the stage and the release film is formed, and the substrate of the component is provided with the substrate and the electronic component disposed on the substrate, and the sealing sheet is disposed on the component. In the substrate, the release film has a central portion connected to the sealing sheet and a peripheral portion disposed around the central portion; and a pressure higher than a pressure inside the sealed container is used to borrow The sealing sheet covers the electronic component; further, the sealing sheet contains an inorganic filler, and the content of the inorganic filler is 60 to 90% by volume, and the lowest is measured at a temperature rising rate of 10 ° C / min, a measuring frequency of 1 Hz, and a strain of 5%. The temperature of the complex viscosity η* is 100 to 150 ° C, and the aforementioned minimum complex viscosity η* is 30 to 3000 Pa. s. 一種電子元件之密封方法，其包含以下步驟：推壓具備元件暫時固定體、密封片及脫模薄膜之積層構造體的周邊部在與載體連接之平台上，藉此形成具備前述平台及前述脫模薄膜之密閉容器，又，前述元件暫時固定體係具備前述載體、配置在前述載體上之黏著劑及配置在前述黏著劑上之電子元件者，前述密 封片係配置在前述元件暫時固定體上者，前述脫模薄膜係具備與前述密封片連接之中央部及配置在前述中央部周邊之前述周邊部者；及使前述密閉容器外部之壓力比前述密閉容器內部之壓力高，以藉前述密封片覆蓋前述電子元件；又，前述密封片含有無機填充劑；前述密封片中之前述無機填充劑之含量係60至90體積%；前述密封片按升溫速度10℃/分、測量頻率1Hz及應變5%測量下顯示最低複數黏度η*的溫度係100至150℃，且前述最低複數黏度η*係30至3000Pa．s。 A method for sealing an electronic component, comprising the steps of: pressing a peripheral portion of a laminated structure including a component temporary fixing body, a sealing sheet, and a release film on a platform connected to a carrier, thereby forming the platform and the aforementioned a sealed container of a molded film, wherein the element temporary fixing system includes the carrier, an adhesive disposed on the carrier, and an electronic component disposed on the adhesive, the dense The release sheet is disposed on the element temporary fixing body, and the release film has a central portion connected to the sealing sheet and a peripheral portion disposed around the central portion; and a pressure outside the sealed container is greater than The pressure inside the sealed container is high to cover the electronic component by the sealing sheet; further, the sealing sheet contains an inorganic filler; the content of the inorganic filler in the sealing sheet is 60 to 90% by volume; and the sealing sheet is heated up The temperature of 10 ° C / min, the measurement frequency of 1 Hz and the strain of 5% shows that the temperature of the lowest complex viscosity η * is 100 to 150 ° C, and the minimum complex viscosity η * is 30 to 3000 Pa. s. 一種電子元件封裝體之製造方法，其包含以下步驟：推壓具備元件暫時固定體、密封片及脫模薄膜之積層構造體的周邊部在與載體連接之平台上，藉此形成具備前述平台及前述脫模薄膜之密閉容器，又，前述元件暫時固定體係具備前述載體、配置在前述載體上之黏著劑及配置在前述黏著劑上之電子元件者，前述密封片係配置在前述元件暫時固定體上者，前述脫模薄膜係具備與前述密封片連接之中央部及配置在前述中央部周邊之前述周邊部者；及使前述密閉容器外部之壓力比前述密閉容器內部之壓力高，以藉前述密封片覆蓋前述電子元件；又，前述密封片含有無機填充劑； 前述密封片中之前述無機填充劑之含量係60至90體積%；前述密封片按升溫速度10℃/分、測量頻率1Hz及應變5%測量下顯示最低複數黏度η*的溫度係100至150℃，且前述最低複數黏度η*係30至3000Pa．s。 A method of manufacturing an electronic component package, comprising: pressing a peripheral portion of a laminated structure including a component temporary fixing body, a sealing sheet, and a release film on a platform connected to a carrier, thereby forming the platform and In the sealed container of the release film, the element temporary fixing system includes the carrier, an adhesive disposed on the carrier, and an electronic component disposed on the adhesive, and the sealing sheet is disposed on the component temporary fixing body In the above, the release film has a central portion connected to the sealing sheet and the peripheral portion disposed around the central portion; and a pressure higher than a pressure inside the sealed container is higher than a pressure of the inside of the sealed container The sealing sheet covers the aforementioned electronic component; further, the sealing sheet contains an inorganic filler; The content of the inorganic filler in the sealing sheet is 60 to 90% by volume; the sealing sheet exhibits a temperature coefficient of 100 to 150 at a minimum complex viscosity η* measured at a temperature rising rate of 10 ° C / min, a measuring frequency of 1 Hz, and a strain of 5%. °C, and the aforementioned minimum complex viscosity η* is 30 to 3000 Pa. s. 一種密封片，係供電子元件之密封方法使用者，且該電子元件之密封方法包含以下步驟：推壓具備元件暫時固定體、密封片及脫模薄膜之積層構造體的周邊部在與載體連接之平台上，藉此形成具備前述平台及前述脫模薄膜之密閉容器，又，前述元件暫時固定體係具備前述載體、配置在前述載體上之黏著劑及配置在前述黏著劑上之電子元件者，前述密封片係配置在前述元件暫時固定體上者，前述脫模薄膜係具備與前述密封片連接之中央部及配置在前述中央部周邊之前述周邊部者；及使前述密閉容器外部之壓力比前述密閉容器內部之壓力高，以藉前述密封片覆蓋前述電子元件；又，前述密封片含有無機填充劑，前述無機填充劑之含量係60至90體積%，按升溫速度10℃/分、測量頻率1Hz及應變5%測量下顯示最低複數黏度η*的溫度係100至150℃，且前述最低複數黏度η*係30至3000Pa．s。 A sealing sheet for a user of a sealing method for an electronic component, the method for sealing the electronic component comprising the steps of: pressing a peripheral portion of the laminated structure including the temporary fixing body of the component, the sealing sheet, and the release film to be connected to the carrier a sealed container having the above-described platform and the release film, wherein the element temporary fixing system includes the carrier, an adhesive disposed on the carrier, and an electronic component disposed on the adhesive. The sealing sheet is disposed on the element temporary fixing body, and the release film has a central portion connected to the sealing sheet and a peripheral portion disposed around the center portion; and a pressure ratio of the outside of the sealed container The pressure inside the sealed container is high to cover the electronic component by the sealing sheet; and the sealing sheet contains an inorganic filler, and the content of the inorganic filler is 60 to 90% by volume, and the temperature is increased by 10 ° C / minute. The frequency of 1 Hz and strain 5% shows the lowest complex viscosity η* temperature system 100 to 150 ° C, and the aforementioned minimum complex viscosity Degree η* is 30 to 3000 Pa. s.
TW103121200A 2013-06-20 2014-06-19 Electronic device sealing method, electronic device package production method, and sealing sheet TW201519329A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013129924 2013-06-20
JP2014108217A JP2015026821A (en) 2013-06-20 2014-05-26 Electronic device sealing method, electronic device package production method, and sealing sheet

Publications (1)

Publication Number Publication Date
TW201519329A true TW201519329A (en) 2015-05-16

Family

ID=52104565

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103121200A TW201519329A (en) 2013-06-20 2014-06-19 Electronic device sealing method, electronic device package production method, and sealing sheet

Country Status (4)

Country Link
JP (1) JP2015026821A (en)
CN (1) CN105324836A (en)
TW (1) TW201519329A (en)
WO (1) WO2014203830A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI661518B (en) * 2018-06-29 2019-06-01 欣興電子股份有限公司 Method for bonding electric element
TWI788363B (en) * 2017-08-31 2023-01-01 日商東京應化工業股份有限公司 Substrate heating device, substrate processing system, and substrate heating method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107210274B (en) * 2015-02-26 2021-09-03 昭和电工材料株式会社 Sealing film and electronic component device using the same
CN106328610B (en) * 2016-09-25 2018-12-07 绍兴柯桥东进纺织有限公司 A kind of multi-mode integrated circuit packaging system
CN110660679B (en) * 2018-06-29 2021-10-08 欣兴电子股份有限公司 Method for joining electronic components

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1180511A (en) * 1997-09-11 1999-03-26 Sumitomo Bakelite Co Ltd Epoxy resin composition for sealing semiconductor
JP4225162B2 (en) * 2003-08-18 2009-02-18 日立化成工業株式会社 Sealing film
JP2008227475A (en) * 2007-02-14 2008-09-25 Toray Ind Inc Release sheet for semiconductor sealing, and its production process
JP5435685B2 (en) * 2007-02-28 2014-03-05 ナミックス株式会社 Resin film for sealing
JP5189194B2 (en) * 2011-09-05 2013-04-24 ミカドテクノス株式会社 Vacuum heating joining apparatus and vacuum heating joining method
JP2013138092A (en) * 2011-12-28 2013-07-11 Tdk Corp Electronic circuit module component and manufacturing method of the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI788363B (en) * 2017-08-31 2023-01-01 日商東京應化工業股份有限公司 Substrate heating device, substrate processing system, and substrate heating method
TWI661518B (en) * 2018-06-29 2019-06-01 欣興電子股份有限公司 Method for bonding electric element

Also Published As

Publication number Publication date
WO2014203830A1 (en) 2014-12-24
JP2015026821A (en) 2015-02-05
CN105324836A (en) 2016-02-10

Similar Documents

Publication Publication Date Title
TWI589662B (en) A film adhesive, a semiconductor package using a film adhesive, and a method of manufacturing the same
TW201519329A (en) Electronic device sealing method, electronic device package production method, and sealing sheet
TW201535543A (en) Production method for semiconductor package
TW201445648A (en) Semiconductor device manufacturing method and thermosetting resin sheet
TW201513278A (en) Resin sheet for electronic device encapsulation and method for manufacturing electronic device package
TW201522591A (en) Sealing thermosetting-resin sheet and hollow-package manufacturing method
TW201532151A (en) Production method for semiconductor package
JP2015216229A (en) Method for manufacturing semiconductor device, and thermosetting resin sheet
TW201533808A (en) Method for producing semiconductor device, and thermosetting resin sheet
JP2014210909A (en) Manufacturing method of semiconductor device
TW201621000A (en) Resin composition, semiconductor device manufacturing method and semiconductor device
TW201533856A (en) Method for manufacturing semiconductor device
TW201442166A (en) Resin sheet for sealing electronic component, resin-sealed semiconductor device, and production method for resin-sealed semiconductor device
TWI655230B (en) Resin sheet for hollow sealing and manufacturing method of hollow package
JP2015216230A (en) Method for manufacturing semiconductor device
CN105684143B (en) The manufacturing method of electronic component encapsulation resin sheet and electron device package body
JP2015220400A (en) Method for manufacturing electronic device package and method for sealing electronic device
TW201521163A (en) Method for producing electronic device package and method for sealing electronic device
JP2016127182A (en) Method for fabricating multilayer sealing resin sheet, and multilayer sealing resin sheet
JP2015220401A (en) Method for manufacturing electronic device package and method for sealing electronic device
JP7354666B2 (en) Sealing film, sealing structure, and method for manufacturing the sealing structure
TW201618959A (en) Separator-equipped sealing sheet and semiconductor device production method
TWI643890B (en) Resin sheet for hollow sealing and manufacturing method of hollow package
Johnson et al. SUEX Laminates for Fan-In, Fan-Out and eWLB Development
TW201728659A (en) Thermosetting composition, sheet, and method for manufacturing device