TW201519302A - Method and device of processing on wafers - Google Patents

Abstract

A method of processing on wafers includes steps of: providing a hard substrate which has a plane; providing a wafer which is directly adhered to the hard substrate via an adhesive layer; cutting the wafer into a plurality of chips; and providing a contactless heat source and making the adhesive layer lose stickiness by projecting heat onto the adhesive layer between the chips and the hard substrate in a non-conductive heating manner without contacting the hard substrate or the chips. This method can be applied to processes such as chip cutting, chip testing, and chip pickups to improve the stability and precision of the process and therefore the efficiency is enhanced.

Description

Method and apparatus for processing on a wafer

The present invention relates to a method and apparatus for processing, and more particularly to a method and apparatus for processing a wafer on a wafer for wafer dicing, wafer testing, wafer sorting, and the like.

After the wafer is completed, it must be processed by wafer cutting, wafer testing, wafer selection, etc. Some processes will choose to perform wafer testing and then cutting, but the results may be changed due to the cutting process. For example, the original test is a good product, and the damage caused by the cutting is formed into a defective product. Therefore, the wafer is first cut and then the wafer is tested.

Regardless of wafer dicing, wafer testing, or wafer selection, the wafer is adhered to a soft film of blue tape or UV tape before wafer dicing to prevent wafer dicing. The wafer is loosely damaged; the blue tape or UV tape adheres to the wafer die until it is topped by the top-up push ejector during the wafer selection process, and The wafer is attracted to the upper nozzle to remove the wafer from the blue tape or UV tape.

In the prior art publication No. I238258 "Wafer Test Method" patent, it is proposed that in the wafer test process, in order to prevent the pressure applied by the cutter when cutting the wafer, deformation of the blue film or the ultraviolet tape may be caused. The position of the wafer after the completion of the cutting is shifted, resulting in the probe not being accurately aligned, resulting in a test Difficult, so it proposes a "include: providing a soft film having a first surface and a second surface, and having a first adhesive layer on the first surface; providing a wafer and The wafer is attached to the flexible film by the first adhesive layer; a rigid substrate is provided, the hard substrate has a second adhesive layer on a surface thereof; and the wafer is attached to the flexible film On the hard substrate, the second surface of the soft film is attached to the hard substrate by the second adhesive layer; and the wafer is diced into a plurality of wafers, and the wafers are electrically Test. The wafer test method is widely used in the current wafer test process. The rigid substrate can provide sufficient rigidity and flatness, so that the wafer can control the displacement of each wafer when cutting. Within the scope of the probe so that the probe can be accurately aligned with the flip-chip bond pad or bump on the active surface of the wafer, and can be tested on a single wafer or simultaneously on multiple wafers; After the test And then through a method of top-down light or heat to penetrate the wafer irradiation or heating, for example, to reduce the viscosity of the first adhesive layer and second adhesive layer to separate the wafer, the flexible sheet and the rigid substrate.

The technology of the "wafer test method" patent of the prior art I238258 certainly solves the problem of wafer testing, but brings cumbersome process and high cost, because it is impossible to perform cutting wafer cutting and wafer on one machine at the same time. The process of testing, wafer selection, etc., so that the blue film or the ultraviolet tape and the hard substrate are adhered under the wafer at the same time, in terms of the wafer testing process, the process of sticking the hard substrate is more than the existing method, and When switching to the wafer selection process, it is necessary to go through a process of releasing the adhesion state of the rigid substrate in order to be topped by the thimble which is pushed from the bottom up and the wafer is sucked by the suction nozzle above. Crystal The film selection process; if the mechanism is redesigned in the wafer selection process to meet the adhesion state of the hard substrate and the blue film or the ultraviolet tape, the light or heat is transmitted from the top or bottom through the wafer. The mechanism will collide with the original nozzle to pick up the wafer. Not only will the wafer selection process be quite complicated, but also the cost of the nozzle and the light or heat from the top and bottom of the wafer. Or heating does not conflict, it is bound to adopt sequential advance and retreat processing, which will delay the efficiency of the process.

Accordingly, it is an object of the present invention to provide a method for processing on a wafer that can be consistently transferred to different processes to save time, cost, and obtain stable and accurate test data and process accuracy.

Another object of the present invention is to provide a method for performing different processes in a process that can be consistently transferred, and can be processed on a wafer without interfering with the drawing operation of the pick-up component in the wafer selection process. .

It is still another object of the present invention to provide an apparatus for processing on a wafer that performs the method of the present invention and another object.

The method for processing on a wafer according to the purpose of the present invention comprises: providing a rigid substrate having a flat surface; providing a wafer directly adhered to a plane of the hard substrate by an adhesive layer; Cutting is performed to form a wafer into a plurality of wafers.

Another method for processing on a wafer according to the purpose of the present invention includes: providing a rigid substrate having a flat surface; providing a wafer directly adhered to a plane of the hard substrate by an adhesive layer; Tested on the wafer to obtain data information on the respective wafers.

A method of processing on a wafer according to another object of the present invention, The method includes: providing a rigid substrate having a flat surface; providing a wafer directly adhered to a plane of the hard substrate by an adhesive layer, the wafer is cut to form a plurality of wafers; and the adhesive layer is reduced in viscosity The chip is picked up on the hard substrate.

An apparatus for processing on a wafer according to still another object of the present invention, comprising: means for performing the method of processing on a wafer as described in any one of claims 1 to 12.

The method and device for processing on a wafer provided by the embodiments of the present invention can avoid the wafer formation disorder that is not taken up, and avoid the conflict with the capture component manipulation mechanism, and omit the conventional blue film or The use of UV tape and the complexity of the process make wafer cutting, wafer testing, wafer capture and other processes coherent, saving time, cost and obtaining stable and accurate test data and process accuracy.

1‧‧‧hard substrate

2‧‧‧ wafer

21‧‧‧ wafer

3‧‧‧Adhesive layer

4‧‧‧ Non-contact heat source

41‧‧‧Laser beam

5‧‧‧Selecting components

The first figure is a schematic diagram of the selection process of the embodiment of the present invention.

The second figure is a schematic diagram of a non-contact heat source in an embodiment of the present invention.

The third figure is a schematic diagram of a non-contact heat source for partial opening in the embodiment of the present invention.

Referring to the first figure, the embodiment of the present invention can be used in a process of wafer dicing, wafer testing, wafer selection, etc., and the following is used in the wafer selection process, including: providing a rigid substrate 1 which can be a glass material permeable to light and having a planar component; a wafer 2 is provided, which is directly adhered to the upper surface of the rigid substrate 1 by an adhesive layer 3, and the wafer 2 is cut to form a plurality of wafers 21; A non-contact heat source 4 is provided, which may be a laser light source (Laser Diode), and a laser beam 41 not in contact with the hard substrate 1 or the wafer 21 is subjected to a non-conducting heating method, from the bottom of the hard substrate 1 The adhesive layer 3 between the wafer 21 and the hard substrate 1 is projected downward to make the adhesive layer 3 less adhesive; a picking member 5 is provided, which can be a negative pressure nozzle, from top to bottom of the wafer 21 The wafer 21 is adsorbed to perform wafer capture.

Referring to the second figure, the non-contact heat source 4 can be a heat source having a plurality of laser beams 41. Each of the laser beams 41 can be arranged in a square matrix, and each of the laser beams 41 can individually control power, switching, and time. It is possible to control all of the laser beam 41 to be turned on for a wide range of projections, or as shown in the third figure, only a portion of the laser beam 41 is turned on for a small range of projection.

In the implementation of the present invention, the wafers 21 of different sizes cut out by the wafer 2 can be taken in accordance with each other. When the size of the wafer 21 to be sampled in the selection process is large, all the lasers can be controlled. The beam 41 is turned on for a wide range of projections; when the size of the wafer 21 to be picked up in the selection process is small, only a small portion of the laser beam 41 can be controlled to be turned on for a small range.

In the embodiment of the present invention, the non-contact heat source 4 of the laser beam 41 is used as a non-conducting heating method that is not in contact with the hard substrate 1 or the wafer 21. The heat source is prevented from being expanded and not captured when the conductive substrate 1 is in contact with the conductive substrate 41. The adhesive layer 3 is adhered under the wafer 21, so that the adhesiveness is reduced without being taken up, and the wafer 21 is scattered and affected. The heat source is projected from the bottom to the bottom of the hard substrate 1 to avoid the hard substrate 1 or The pick-up element 5 above the wafer 21 forms a collision with the steering mechanism, so that the adhesive operation of the adhesive layer 3 of the non-contact heat source 4 and the pick-up operation of the pick-up element 5 can be performed simultaneously without interfering with each other.

In the embodiment of the present invention, the wafer 2 is directly adhered to the rigid substrate 1 for a selection process, and the use of the conventional blue film or the ultraviolet tape can be omitted, and the process is complicated, and the wafer is simultaneously used for wafer cutting and wafer processing. The test and other processes can not only make the wafer test free from the soft scratching effect of the blue film or the ultraviolet tape, so that the obtained data can be obtained stably and accurately, and the processes such as wafer cutting, wafer testing, wafer drawing and the like will be formed in a coherent manner, and the wafer 2 is The hard substrate 1 is consistently transported for each process, and does not need to be adhered to the blue film or the ultraviolet tape in the wafer test process to increase the adhesion of the hard substrate, and the hard substrate is not required to be removed from the wafer selection process. The top ejector pin is topped, so the overall wafer cutting, wafer testing, wafer capture and other processes will save time, cost and obtain stable and accurate test data and process accuracy.

The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.

1‧‧‧hard substrate

2‧‧‧ wafer

21‧‧‧ wafer

3‧‧‧Adhesive layer

4‧‧‧ Non-contact heat source

41‧‧‧Laser beam

5‧‧‧Selecting components

Claims (13)

A method for processing on a wafer, comprising: providing a rigid substrate having a flat surface; providing a wafer directly adhered to a plane of the hard substrate by an adhesive layer; and performing cutting on the wafer The wafer is formed into a plurality of wafers. A method for processing on a wafer, comprising: providing a rigid substrate having a flat surface; providing a wafer directly adhered to a plane of the hard substrate by an adhesive layer; performing testing on the wafer In order to obtain data information on the respective chips. A method for processing on a wafer, comprising: providing a rigid substrate having a flat surface; providing a wafer directly adhered to a plane of the hard substrate by an adhesive layer, and the wafer is cut to form a plurality of Wafer; the adhesive layer is reduced in viscosity and the wafer is picked up on the hard substrate. A method of processing on a wafer as described in claim 3, wherein the adhesive layer is reduced in viscosity, providing a non-contact heat source for non-conductive heating not in contact with the rigid substrate or wafer. In this way, the adhesive layer between the wafer and the hard substrate is projected to make the adhesive layer lose its viscosity. A method of processing on a wafer as described in claim 3, wherein a pick-up element is provided for wafer capture. A method for processing on a wafer as described in claim 3, wherein the nozzle is suctioned from above and below the wafer by a nozzle having a negative pressure. take. A method of processing on a wafer as described in claim 4, wherein the non-contact heat source is a laser light source. A method of processing on a wafer as described in claim 4, wherein the non-contact heat is originated from a bottom to a top below the hard substrate. A method of processing on a wafer as described in claim 4, wherein the non-contact heat source has a plurality of light beams, and the light beams are arranged in a square matrix. The method of processing on a wafer as described in claim 4, wherein the non-contact heat source has a plurality of light beams, each of which individually controls power, switching, and time. The method for processing on a wafer as described in claim 4, wherein the non-contact heat source has a plurality of light beams, and can control all of the light beams to be opened for a wide range of projections, or only a part of the light beams can be turned on. The projection of the range. The method for processing on a wafer according to any one of claims 1 to 3, wherein the hard substrate is made of a light transmissive glass. A device for processing on a wafer for performing a method of processing on a wafer as described in any one of claims 1 to 12.