TW201517295A - 太陽能電池與其形成方法 - Google Patents
太陽能電池與其形成方法 Download PDFInfo
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- TW201517295A TW201517295A TW103107838A TW103107838A TW201517295A TW 201517295 A TW201517295 A TW 201517295A TW 103107838 A TW103107838 A TW 103107838A TW 103107838 A TW103107838 A TW 103107838A TW 201517295 A TW201517295 A TW 201517295A
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title description 4
- 125000006850 spacer group Chemical group 0.000 claims abstract description 133
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- 238000000206 photolithography Methods 0.000 claims description 3
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- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
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- 238000009834 vaporization Methods 0.000 description 2
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- 239000004642 Polyimide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 238000010549 co-Evaporation Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 230000032798 delamination Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- SIXIBASSFIFHDK-UHFFFAOYSA-N indium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[In+3].[In+3] SIXIBASSFIFHDK-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
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- 239000012702 metal oxide precursor Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
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- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
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- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000417 polynaphthalene Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
本發明之方法包括沉積間隔物於太陽能電池基板上的背接點層上的多個位置中。吸收層係形成於背接點層與間隔物上。吸收層部份接觸間隔物,且部份直接接觸背接點層。加熱太陽能電池基板,以形成孔洞於吸收層及背接點層之間的間隔物所在的位置。
Description
本發明係關於太陽能電池,更特別關於薄膜光伏電池與其製作方法。
光伏電池或太陽能電池係由太陽光直接產生電流的光伏構件。由於對乾淨能源的需求增加,近年來太陽能電池產業快速成長且持續擴張。太陽能電池包括基板、基板上的背接點層、背接點層上的吸收層、吸收層上的緩衝層、以及緩衝層上的正接點層。經由沉積製沉如濺鍍及/或共蒸鍍,可形成上述層狀物於基板上。
某些太陽能電池的至少部份吸收層可採用半導體材料。舉例來說,黃銅礦為主的半導體材料如銅銦鎵硒(CIGS)可作為薄膜太陽能電池材料。在沉積製程後,可形成CIGS吸收層。
在半導體材料中,「再結合」指的是電子與電洞結合後釋放能量給另一電子,而非放射能量如光子。另一電子(與後續電子)將會藉由一連串的碰撞消耗能量,以回到能帶邊緣。如此一來,多個粒子如多個電子與電洞將作用產生上述結果,即多個電子-電對洞未產生有用的能量(如光能)而是再結合,並減少電荷載子的數量。
由於再結合現象取決於電荷載子交換能量的能
力,越高濃度的電荷載子發生再結合的機率也越高。
在高強度的陽光下,再結合現象明顯降低太陽能電池的效率。
本發明一實施例提供之太陽能電池的形成方法,包括:沉積多個間隔物於太陽能電池基板上的背接點層上的多個位置中;形成吸收層於背接點層與間隔物上,吸收層部份接觸間隔物,且吸收層部份直接接觸背接點層;以及加熱太陽能電池基板,以形成多個孔洞於吸收層與接點層之間的間隔物所在的位置。
本發明一實施例提供之太陽能電池的形成方法,包括:噴灑間隔物材料於太陽能電池基板上的背接點層上的多個位置上,且間隔物材料直接接觸背接點層;以及形成吸收層於背接點層與間隔物材料上,約10%至約80%之吸收層直接接觸間隔物材料,且約90%至約20%之吸收層直接接觸背接點層。
本發明一實施例提供之太陽能電池,包括:太陽能電池基板;背接點層,位於太陽能電池基板上;吸收層,包括吸收層材料於背接點層上,吸收層材料部份直接接觸背接點層,吸收層材料具有多個孔洞於其中,且孔洞直接位於背接點層上;緩衝層,位於吸收層上;以及正接點層,位於緩衝層上。
P1、P2、P3‧‧‧切割線
2-2‧‧‧剖線
100、200‧‧‧太陽能電池
102‧‧‧太陽能電池基板
104‧‧‧背接點層
106‧‧‧孔洞
107‧‧‧吸收層
108‧‧‧緩衝層
110‧‧‧正接點層
502、504、506、508、510、512、600、610、612、614、616‧‧‧步驟
702、704‧‧‧曲線
第1圖係本發明一實施例中,太陽能電池的剖視圖。
第2圖係某些實施例中,沿著第1圖之太陽能電池的剖視圖
中剖線2-2的剖視圖。
第3圖係其他實施例中,沿著第1圖之太陽能電池的剖視圖中剖線2-2的剖視圖。
第4圖係第1圖之太陽能電池之層狀物的掃描電子顯微鏡照片。
第5圖係第1圖之太陽能電池的製作方法之流程圖。
第6A圖係第5圖中沉積間隔物之步驟的一實施例之流程圖。
第6B圖係第5圖中沉積間隔物之步驟的另一實施例之流程圖。
第7圖係第1圖之太陽能電池其發電量改善的圖譜。
下述內容的實施例將搭配圖式說明,且圖式應視作完整說明的一部份。在圖式中,相同標號將用以標示相同組件。
在下述說明中,空間性的相對用語如「較下方」、「較上方」、「水平地」、「垂直地」、「於...上」、「於...下」、「上」、「下」、「頂」、與「底」或類似用語可用於簡化說明某一元件與另一元件在圖示中的相對關係。這些相對用語僅用以說明而非侷限裝置的結構或操作方向。
本發明揭露多種光伏電池,其間隔物或孔洞係直接位於背接點層的上表面上。間隔物或孔洞可減少吸收層與背接點層之間的接觸面積,以降低太陽能電池的再結合現象並提高太陽能電池效率。下述內容亦揭露如何製作太陽能電池。
第1圖係某些實施例中,太陽能電池100之剖視圖。太陽能電池100包含太陽能電池基板102、背接點層104、吸收層107、吸收層107中的多個孔洞106、緩衝層108、與正接點層110。
太陽能電池基板102可包含任何適用基板材料,比如玻璃。在某些實施例中,太陽能電池基板102包含玻璃基板如鈉鈣玻璃,可撓金屬箔、或高分子如聚醯亞胺、聚對苯二甲酸乙二酯(PET)、或聚萘二甲酸乙二酯(PEN)。其他實施例可包含其他基板材料。
背接點層104包含任何適用之背接點材料,比如金屬。在某些實施例中,背接點層104可包含鉬、鉑、金、銀、鎳、或銅。其他實施例可包含其他背接點材料。在某些實施例中,背接點層104之厚度介於約50nm至約2μm之間。
在某些實施例中,吸收層107包含任何適用之吸收材料,比如p型半導體。在某些實施例中,吸收層107可包含黃銅礦為主的材料,比如Cu(In,Ga)Se2(CIGS)、碲化鎘(CdTe)、CuInSe2(CIS)、CuGaSe2(CGS)、Cu(In,Ga)(Se,S)2(CIGSS)、或非晶矽。其他實施例可包含其他吸收材料。在某些實施例中,吸收層107之厚度介於約0.3μm至約3μm之間。
吸收層107包含多個孔洞106,且孔洞106直接接觸背接點層104之上表面。「吸收層中的孔洞」之定義,係孔洞106中沒有任何吸收層材料存在。在某些實施例中,孔洞106包含真空。在某些實施例中,孔洞106包含間隔物材料如下述。在某些實施例中,孔洞106包含形成間隔物材料的一或多個前
驅物。在某些實施例中,孔洞106包含間隔物材料分解後的一或多個殘留產物。在某些實施例中,孔洞包括真空、間隔物材料、間隔物材料前驅物、及/或間隔物材料分解後的殘餘產物中一或多者之組合。綜上所述,「吸收層中的孔洞」指的是吸收層107中的孔洞106,不論孔洞中是否含有上述物質。孔洞106提供絕緣空間或絕緣材料於部份吸收層107與其下方之部份背接點層104之間。孔洞106使吸收層107與背接點層104之間的界面不連續。
在某些實施例中,孔洞106包含間隔物,其由絕緣間隔物材料如氧化物所形成。在某些實施例中,間隔物材料包含氧化矽。在某些實施例中,間隔物材料包含金屬氧化物如氧化鈦、氧化鉭、氧化鋁、氧化鋯、氧化鉬、或氧化鋇鈦。在某些實施例中,間隔物材料包含高電阻化合物半導體,比如氧化鉿。在某些實施例中,間隔物材料包含尺寸介於約50nm至約1000nm之間的粒子。在某些實施例中,間隔物材料包含尺寸介於約100nm至約500nm之間的粒子。在其他實施例中,間隔物材料包括尺寸介於約1nm至約100nm之間的粒子。
在某些實施例中,吸收層107其10%至80%的下表面接觸孔洞106或孔洞中的間隔物。在某些實施例中,吸收層107其約90%至約20%的下表面直接接觸背接點層104,而吸收層107的其他下表面接觸孔洞106或孔洞中的絕緣間隔物。
在某些實施例中,間隔物覆蓋約70%至約80%之背接點層104,而約30%至約20%之吸收層107直接接觸其下方的背接點層104。本案之發明人確認太陽能電池100中,約80%的
吸收層107鄰接孔洞106,而約20%的吸收層107直接接觸背接點層104時,太陽能模組的轉換效率為沒有上述孔洞106之吸收層107的太陽能電池的轉換效率之105%至106%。太陽能電池100中,約80%之吸收層107鄰接孔洞106且約20%之吸收層107直接接觸背接點層104的設計,不會增加吸收層分層的風險。
緩衝層108包含任何適用的緩衝材料,比如n型半導體。在某些實施例中,緩衝層108可包含硫化鎘(CdS)、硫化鋅(ZnS)、硒化鋅(ZnSe)、硫化銦(In2S3)硒化銦(In2Se3)、或Zn1-xMgxO(如氧化鋅)。其他實施例可包含其他緩衝材料。在某些實施例中,緩衝層108之厚度介於約1nm至約500nm之間。
在某些實施例中,正接點層110包含回火的透明導電氧化物(TCO)層。在某些實施例中,TCO的正接點層110具有高度掺雜。舉例來說,TCO的正接點層110其電荷載子密度可介於約1×1017cm-3至約1×1018cm-3之間。用於回火之TCO層的TCO材料可包含任何適用的正接點材料,比如金屬氧化物或金屬氧化物前驅物。在某些實施例中,TCO材料可為氧化鋅、氧化鎘、氧化銦、氧化錫、氧化鉭、氧化鎵銦、氧化鎘銻、或氧化銦。TCO材料亦可掺有合適掺質。在某些實施例中,氧化鋅可掺有下列中任一者:鋁、鎵、硼、銦、釔、鈧、氟、釩、矽、鍺、鈦、鋯、鉿、鎂、砷、或氫。在其他實施例中,氧化錫可掺有銻、氟、砷、鈮、或鉭。在其他實施例中,氧化銦可掺有錫、鉬、鉭、鎢、鋯、氟、鍺、鈮、鉿、或鎂。在其他實施例中,氧化鎘可掺有銦或錫。在其他實施例中,氧化鎵銦可掺有錫或鍺。在其他實施例中,氧化鎘銻可掺有可掺有釔。在其他
實施例中,氧化銦可掺有錫。其他實施例可包含其他TCO材料與對應掺質。在某些實施例中,正接點層110在切割線P2外的厚度介於約5nm至約3μm之間,在切割線P2之側壁上的厚度介於約0.5nm至約3μm之間,且在切割線P2之底部上(直接接觸背接點層104)的厚度介於約5nm至約3μm之間。
太陽能電池100亦包含內連線結構,比如切割線P1、P2、與P3。切割線P1延伸穿過背接點層104,並填有吸收層材料。切割線P2延伸穿過緩衝層108與吸收層107,並填有正接點層材料。切割線P3延伸穿過正接點層110、緩衝層108、與吸收層107。
第2圖係沿著第1圖之太陽能電池的剖視圖中,剖線2-2的剖視圖,即往下看背接點層104與孔洞106的上面。吸收層107包含吸收層材料於背接點層104上,吸收層材料部份直接接觸背接點層。且吸收層材料具有多個孔洞106於其中。孔洞106直接位於背接點層104上。
在第2圖的實施例中,孔洞106係規則地或實質上規則地分佈於背接點層104的上表面上(除了切割線P1、P2、與P3的區域)。第2圖中規則分佈的孔洞106之形成方法可為沉積規則的間隔物材料膜與進行光微影步驟(如下述第6B圖)。規則分佈的孔洞106提供優良的製程控制。在某些實施例中,間隔物密度介於1×108間隔物/cm2至4×1010間隔物/cm2之間。
第3圖係另一實施例之太陽能電池200,其孔洞係無規地分佈於背接點層104的上表面上(除了切割線P1、P2、與P3的區域)。第3圖中無規分佈的孔洞106之形成方法,可為直
接噴灑間隔物材料至背接點層104上(如下述第6A圖)。噴灑的間隔物材料的密度,可與前述圖案化之間隔物材料的密度相同,比如介於1×108間隔物/cm2至4×1010間隔物/cm2之間。無規分佈的間隔物材料可由便宜的噴灑製程沉積而成。
第4圖係第1圖之太陽能電池100之掃描電子顯微鏡(SEM)影像,其包含背接點層104、孔洞106、吸收層107、緩衝層108、與正接點層110。在第4圖中,孔洞106實質上不含任何固體材料於其中。在某些實施例中,沉積於背接點層104上的間隔物材料為絕緣材料,其汽化溫度低於其他製程溫度,比如沉積及/或回火一或多個其他層狀物(比如吸收層107、緩衝層108、正接點層110)的溫度。舉例來說,若間隔物材料之汽化溫度小於或等於400℃(或小於或等於600℃),則可實質上移除背接點層104與吸收層107之間的界面之間隔物材料,以形成第4圖所示之中空的孔洞106。而吸收層107與背接點層104之間殘餘的直接接觸,約大於5%之背接點層104的總表面積。在某些實施例中,吸收層107與背接點層104之間殘餘的直接接觸,約大於10%之背接點層104的總表面積。在某些實施例中,吸收層107與背接點層104之間殘餘的直接接觸,約大於20%之背接點層104的總表面積。
第5圖係第1圖之太楊能電池100之製作方法的流程圖。
在步驟502中,形成背接點層104於太陽能電池基板102上。某些背接點層104之沉積方法可為濺鍍金屬如鉬於太陽能電池基板102上。在沉積背接點層後,以切割或蝕刻等方
法形成切割線P1穿過背接點層104。
在步驟504中,沉積間隔物106於太陽能電池基板102上的背接點層104上的多個位置中,且間隔物106直接接觸背接點層104。間隔物沉積步驟的某些實施例將詳述於第6A與6B圖。
在步驟506中,形成吸收層107於背接點層104與間隔物106上。吸收層107之底部部份接觸間隔物106,且部份接觸背接點層104。在某些實施例中,吸收層包含CIGS。在某些實施例中,多個CIGS前驅物係濺鍍至間隔物106上,並露出部份背接點層104。在某些實施例中,CIGS前驅物包括Cu/In、CuGa/In、及/或CuInGa,其施加方式為濺鍍。吸收層材料填入切割線P1。在濺鍍前驅物後,進行硒化製程。
在步驟508中,形成緩衝層108於吸收層107上。舉例來說,可採用化學浴沉積(CBD)形成CdS、ZnS、或InS等層狀物。在其他實施例中,緩衝層108之沉積方法為濺鍍或原子層沉積(ALD)。在沉積緩衝層108後,以切割或蝕刻等方法形成切割線P2穿過吸收層107與緩衝層108。
在步驟510中,形成正接點層110於緩衝層上。在某些實施例中,正接點層110係i-ZnO或AZO,其形成方法為濺鍍。在其他實施例中,正接點層為BZO,其形成方法為有機金屬化學氣相沉積(MOCVD)。正接點層材料順應性地覆蓋切割線P2的側壁與底部。在沉積正接點層110後,以切割或蝕刻等方法形成切割線P3穿過正接點層、緩衝層108、與吸收層107。
在步驟512的某些實施例中,加熱太陽能電池基板
102以形成孔洞106於吸收層107與背接點層104之間的間隔物所在的位置。在某些實施例中,加熱基板之步驟的溫度介於約400℃至約600℃之間。在某些實施例中,加熱之步驟512可為回火步驟。在某些實施例中,加熱步驟包括回火正接點層110(窗口)。如此一來,加熱之步驟512不需在太陽能電池製程外新增額外的回火步驟。在某些實施例中,加熱步驟後可形成孔洞106,其可為真空、含有間隔物材料、含有間隔物材料之前驅物、含有間隔物材料分解後的殘餘物、或上述之組合。舉例來說,某些實施例在回火步驟後的低壓(部份真空)下,孔洞106為真空或只含間隔物材料分解後的殘餘物。
第6A圖係第5圖之步驟504之一實施例的流程圖。在第6A圖,步驟504包含直接噴灑間隔物材料至背接點層104上的步驟600。在某些實施例中,間隔物106的材料其粒子尺寸介於約100nm至約500nm之間。在某些實施例中,沉積間隔物106的方法包括噴灑奈米粒子於背接點層上。在某些實施例中,沉積間隔物106之步驟包括噴灑尺寸介於約100nm至約500nm之氧化矽粒子,至背接點層104其70%至80%的表面上。
噴灑間隔物材料之步驟可整合至太陽能電池的生產線中。舉例來說,某些實施例中的噴灑方法採用一或多個噴嘴,而這些噴嘴可位於沉積背接點層104的相同腔室中。多個噴嘴可用以改善間隔物粒子的均勻度。
第6B圖係第5圖之步驟504之另一實施例的流程圖。在第6B圖的實施例中,步驟504包含步驟610至616。
在步驟610中,沉積間隔物材料膜於背接點層104
上。在某些實施例中,均勻地沉積間隔物材料膜。均勻的材料沉積製程包含下列中一或多者:物理氣相沉積(PVD)、化學氣相沉積(CVD)、原子層沉積(ALD)、磊晶、或類似方法。在某些實施例中,可沉積均勻的氧化矽膜。
在步驟612中,沉積光阻於間隔物材料膜上。
在步驟614中,圖案化光阻。藉由光罩選擇性地曝光光阻,並顯影與烘烤曝光後的光阻。光阻可為正光阻或負光阻,並採用對應的光罩。位於間隔物位置中的部份光阻不溶於顯影液,而位於間隔物位置外的部份光阻可溶於顯影液。溶解移除可溶的光阻後,保留間隔物位置中的部份光阻作為硬遮罩。
在步驟616中,蝕刻間隔物位置以外的間隔物材料,以留下規則的間隔物106如第2圖所示。
如第7圖所示,直接接觸背接點層之孔洞及/或間隔物106越多,開路電壓(Voc)越高。上述孔洞及/或間隔物106位於部份吸收層下。曲線702指的是前述不具有孔洞/間隔物之太陽能電池。曲線704指的是前述具有孔洞/間隔物之太陽能電池。第1表為具有或不具有孔洞/間隔物之太陽能電池的效能比較。
第1表之第1欄的數據(Seff(cm/s)指的是具有孔洞/間隔物或不具有孔洞/間隔物之太陽能電池的表面再結合速
率。半導體表面上的再結合速率定義如下:表面之電子(或電洞)之電流密度的法線向量,與表面之額外電子(或電洞)之電荷密度的比值。電流密度的範圍約介於32至37之間,取決於太陽光的照射等級。具有間隔物之太陽能電池的Seff約為100cm/s,而不具有間隔物之太陽能電池之Seff約為100,000cm/s。如此一來,增加間隔物即降低表面再結合速率,且降低程度為三個數量級。第1表更顯示具有孔洞/間隔物之太陽能電池的短路電流(Jsc,34.11mA/cm2),高於不具有孔洞間隔物之太陽能電池的短路電流(33.97mA/cm2)。具有孔洞/間隔物之太陽能電池的開路電壓(Voc,0.6907V),高於不具有孔洞間隔物之太陽能電池的短路電流(0.6657V)。具有孔洞/間隔物之太陽能電池的填充因子(0.8298),高於不具有孔洞間隔物之太陽能電池的填充因子(0.8195)。填充因子的定義為實際最大電力,與開路電壓與短路電流之乘積的比值。填充因子的曲線為電流/電壓曲線702與704,且填充因子越高即裝置效能越好。
由於再結合會移除吸收層的電子-電洞對,因孔洞/間隔物而降低1000倍的再結合速率可讓太陽能電池的總體效率(Eff.)由不含孔洞/間隔物之18.54%增加至19.55%,即太陽能電池效率改善約5.4%。
上述實施例係用以提供孔洞/間隔物以直接接觸p-n接面型的太陽能電池之背接點層104。此處所述之孔洞/間隔物可用於其他薄膜太陽能電池,包含但不限於非晶矽薄膜太陽能電池、具有p-n接面之CIGS與CdTe太陽能電池、p-本質-n(p-i-n)結構、金屬-絕緣-半導體(MIS)結構、多接面(如具有二
或三格吸收層連續堆疊之p-n-p-n或p-n-p-n-p-n)結構、或類似結構。
在某些實施例中,太陽能電池的形成方法包括:沉積多個間隔物於太陽能電池基板上的背接點層上的多個位置中;形成吸收層於背接點層與間隔物上,吸收層部份接觸間隔物,且吸收層部份直接接觸背接點層;以及加熱太陽能電池基板,以形成多個孔洞於吸收層與接點層之間的間隔物所在的位置。
在某些實施例中,沉積間隔物之步驟包括噴灑多個間隔物材料顆粒於背接點層上。
在某些實施例中,間隔物材料顆粒包括金屬氧化物。
在某些實施例中,間隔物材料顆粒包括氧化矽。
在某些實施例中,間隔物材料顆粒之尺寸介於約100nm至約500nm之間。
在某些實施例中,沉積間隔物之步驟包括噴灑多個奈米粒子於背接點層上。
在某些實施例中,沉積間隔物之步驟包括:沉積氧化矽膜於背接點層上;以及以光微影製程移除間隔物的位置以外之部份氧化矽膜。
在某些實施例中,沉積間隔物之步驟包括以間隔物材料覆蓋約70%至約80%之背接點層。
在某些實施例中,加熱太陽能電池基板之步驟的溫度介於約400℃至約600℃之間。
在某些實施例中,沉積間隔物之步驟包括將尺寸介於約100nm至約500nm之氧化矽粒子,噴灑於約70%至約80%之背接點層上;以及加熱太陽能電池基板之步驟的溫度介於約400℃至約600℃之間。
在某些實施例中,太陽能電池的形成方法,包括:噴灑間隔物材料於太陽能電池基板上的背接點層上的多個位置上,且間隔物材料直接接觸背接點層;以及形成吸收層於背接點層與間隔物材料上,約10%至約80%之吸收層直接接觸間隔物材料,且約90%至約20%之吸收層直接接觸背接點層。
在某些實施例中,更包括加熱太陽能電池基板以形成多個孔洞於吸收層與接點層之間的間隔物所在的位置。
在某些實施例中,間隔物材料包括氧化矽。
在某些實施例中,間隔物材料包括尺寸介於約100nm至約500nm之粒子。
在某些實施例中,太陽能電池包括:太陽能電池基板;背接點層,位於太陽能電池基板上;吸收層,包括吸收層材料於背接點層上,吸收層材料部份直接接觸背接點層,吸收層材料具有多個孔洞於其中,且孔洞直接位於背接點層上;緩衝層,位於吸收層上;以及正接點層,位於緩衝層上。
在某些實施例中,更包括多個間隔物位於孔洞中並直接位於背接點層上。
在某些實施例中,間隔物包括絕緣材料。
在某些實施例中,間隔物包括尺寸介於約100nm至約500nm之間的粒子。
在某些實施例中,吸收層之約20%至約90%的下表面直接接觸背接點層,而吸收層之其他下表面接觸者係孔洞或孔洞中的絕緣間隔物。
在某些實施例中,孔洞係無規地分佈於背接點層上。
雖然本發明已以數個實施例揭露如上,然其並非用以限定本發明。任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作任意之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
P1、P2、P3‧‧‧切割線
2-2‧‧‧剖線
100‧‧‧太陽能電池
102‧‧‧太陽能電池基板
104‧‧‧背接點層
106‧‧‧孔洞
107‧‧‧吸收層
108‧‧‧緩衝層
110‧‧‧正接點層
Claims (10)
- 一種太陽能電池的形成方法,包括:沉積多個間隔物於一太陽能電池基板上的一背接點層上的多個位置中;形成一吸收層於該背接點層與該些間隔物上,該吸收層部份接觸該些間隔物,且該吸收層部份直接接觸該背接點層;以及加熱該太陽能電池基板,以形成多個孔洞於該吸收層與該接點層之間的該些間隔物所在的位置。
- 如申請專利範圍第1項所述之太陽能電池的形成方法,其中沉積該些間隔物之步驟包括噴灑多個間隔物材料顆粒於該背接點層上。
- 如申請專利範圍第1項所述之太陽能電池的形成方法,其中沉積該些間隔物之步驟包括:沉積一氧化矽膜或隔離膜於該背接點層上;以及以光微影製程移除該些間隔物的位置以外之部份該氧化矽膜或部份該隔離膜。
- 如申請專利範圍第1項所述之太陽能電池的形成方法,其中加熱該太陽能電池基板之步驟的溫度介於約400℃至約600℃之間。
- 一種太陽能電池的形成方法,包括:噴灑一間隔物材料於一太陽能電池基板上的一背接點層上的多個位置上,且該間隔物材料直接接觸該背接點層;以及 形成一吸收層於該背接點層與該間隔物材料上,約10%至約80%之該吸收層直接接觸該間隔物材料,且約90%至約20%之該吸收層直接接觸該背接點層。
- 如申請專利範圍第5項所述之太陽能電池的形成方法,更包括加熱該太陽能電池基板以形成多個孔洞於該吸收層與該接點層之間的該些間隔物所在的位置。
- 一種太陽能電池,包括:一太陽能電池基板;一背接點層,位於該太陽能電池基板上;一吸收層,包括一吸收層材料於該背接點層上,該吸收層材料部份直接接觸該背接點層,該吸收層材料具有多個孔洞於其中,且該些孔洞直接位於該背接點層上;一緩衝層,位於該吸收層上;以及一正接點層,位於該緩衝層上。
- 如申請專利範圍第7項所述之太陽能電池,更包括多個間隔物位於該些孔洞中並直接位於該背接點層上。
- 如申請專利範圍第7項所述之太陽能電池,其中該吸收層之約20%至約90%的下表面直接接觸該背接點層,而該吸收層之其他下表面接觸者係該些孔洞或該些孔洞中的絕緣間隔物。
- 如申請專利範圍第7項所述之太陽能電池,其中該些孔洞係無規地分佈於該背接點層上。
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