TW201510257A - Sputtering target for magnetic recording medium - Google Patents

Sputtering target for magnetic recording medium Download PDF

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TW201510257A
TW201510257A TW103118555A TW103118555A TW201510257A TW 201510257 A TW201510257 A TW 201510257A TW 103118555 A TW103118555 A TW 103118555A TW 103118555 A TW103118555 A TW 103118555A TW 201510257 A TW201510257 A TW 201510257A
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powder
sputtering target
sintered body
particle diameter
average particle
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TWI605143B (en
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Atsushi Sato
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Jx Nippon Mining & Metals Corp
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12Both compacting and sintering
    • B22F3/14Both compacting and sintering simultaneously
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C33/00Making ferrous alloys
    • C22C33/02Making ferrous alloys by powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/04Alloys based on a platinum group metal
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851Coating a support with a magnetic layer by sputtering
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C2202/00Physical properties

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)

Abstract

A sintered sputtering target containing a Fe-Pt alloy and a non-magnetic material as the main components, said sintered sputtering target being characterized in that at least C (carbon) is contained as the non-magnetic material, an additional trace element other than the above-mentioned main components is contained in an amount of 50 to 5000 ppm by mass, and the standard free energy of formation ([Delta]G DEG ) of the additional trace element per 1 mole of carbon in a carbide is -5000 [cal/mol] or less. The present invention addresses the problem of providing a sputtering target which undergoes the formation of particles in a greatly reduced amount upon sputtering and contains a Fe-Pt alloy and a non-magnetic material as the main components.

Description

磁記錄媒體用濺鍍靶 Sputter target for magnetic recording media

本發明係關於一種用於形成磁記錄媒體中之磁性薄膜的濺鍍靶。 The present invention relates to a sputtering target for forming a magnetic thin film in a magnetic recording medium.

於硬碟驅動機所代表之磁記錄領域,磁記錄媒體之磁性薄膜的材料,一直使用以強磁性金屬Co、Fe或Ni作為基底之材料。例如,於採用水平磁記錄方式之硬碟的磁性薄膜,係使用以Co作為主成分之Co-Cr系或Co-Cr-Pt系的強磁性合金。 In the field of magnetic recording represented by a hard disk drive machine, a material of a magnetic film of a magnetic recording medium has been mainly made of a material having a ferromagnetic metal Co, Fe or Ni as a base. For example, a magnetic film of a hard disk using a horizontal magnetic recording method is a Co-Cr-based or Co-Cr-Pt-based ferromagnetic alloy containing Co as a main component.

又,採用近年來已實用化之垂直磁記錄方式之硬碟的磁性薄膜,多使用由主成分為Co之Co-Cr-Pt系強磁性合金與氧化物構成的複合材料。而且,由於生產性高,上述磁性薄膜大多係以磁控濺鍍裝置對以上述材料作為成分之濺鍍靶進行濺鍍來製作。 Further, a magnetic material of a hard disk having a perpendicular magnetic recording method which has been put into practical use in recent years is often a composite material composed of a Co-Cr-Pt-based ferromagnetic alloy having a main component of Co and an oxide. Further, since the magnetic properties are high, the magnetic thin film is often produced by sputtering a sputtering target having the above-mentioned material as a component by a magnetron sputtering apparatus.

另一方面,硬碟之記錄密度逐年迅速地增大,正在超越1Tbit/in2。若記錄密度達到1Tbit/in2,則記錄bit之尺寸會低於10nm,可預料於該情形時由熱波動所引起之超順磁性化將成為問題。且可預料就現在所使用之磁記錄媒體的材料,例如於Co基合金添加Pt以提高結晶磁異向性的材料而言並不足夠。 On the other hand, the recording density of hard disks has rapidly increased year by year, surpassing 1Tbit/in 2 . If the recording density reaches 1 Tbit/in 2 , the size of the recording bit will be less than 10 nm, and it is expected that superparamagnetization caused by thermal fluctuations in this case will become a problem. It is also expected that the material of the magnetic recording medium used today, for example, a material in which Pt is added to a Co-based alloy to increase crystal magnetic anisotropy is not sufficient.

其原因在於:尺寸在10nm以下穩定地以強磁性動作之磁性粒子需具有更高之結晶磁異向性。 The reason for this is that magnetic particles which are stably magnetized with a size of 10 nm or less are required to have higher crystal magnetic anisotropy.

由於上述理由,具有L10結構之Fe-Pt合金作為超高密度記錄媒體用材料而受到注意。具有L10結構之Fe-Pt合金不僅具有高的結晶磁異向性,且耐蝕性、抗氧化性優異,因此被期待為適合應用作為磁記錄媒體的材料。 For the above reasons, an Fe-Pt alloy having an L1 0 structure has been attracting attention as a material for an ultrahigh-density recording medium. The Fe-Pt alloy having the L1 0 structure not only has high crystal magnetic anisotropy, but also has excellent corrosion resistance and oxidation resistance, and therefore is expected to be suitable as a material for a magnetic recording medium.

又,於將具有L10結構之Fe-Pt合金使用作為超高密度記錄媒體用材料之情形時,要求開發如下之技術:使規則化於L10結構之Fe-Pt磁性粒子在磁孤立之狀態下儘量高密度地方向一致且分散。 Further, when a Fe-Pt alloy having an L1 0 structure is used as a material for an ultrahigh-density recording medium, it is required to develop a technique in which a Fe-Pt magnetic particle regularized in an L1 0 structure is magnetically isolated. The direction is as high as possible and the direction is uniform and dispersed.

因此,以C(碳)或氧化物等非磁性材料將具有L10結構之Fe-Pt磁性粒子孤立的粒狀(granular)結構磁性薄膜,被提出來作為採用熱輔助磁記錄方式之次世代硬碟的磁記錄媒體用。此粒狀結構磁性薄膜具有下述結構:藉由使非磁性材料包圍磁性粒子,以遮斷磁性粒子間之磁相互作用。 Therefore, a granular magnetic film having an isolated structure of Fe-Pt magnetic particles having an L1 0 structure is proposed as a non-magnetic material such as C (carbon) or oxide, and is proposed as a next generation hard using a thermally assisted magnetic recording method. The magnetic recording medium of the disc is used. The granular magnetic film has a structure in which a magnetic interaction between magnetic particles is blocked by surrounding a magnetic particle with a non-magnetic material.

具有粒狀結構之磁性薄膜的磁記錄媒體及與其相關的公知文獻,可列舉專利文獻1、專利文獻2、專利文獻3、專利文獻4、專利文獻5。 A magnetic recording medium having a magnetic film having a granular structure and a related document related thereto include Patent Document 1, Patent Document 2, Patent Document 3, Patent Document 4, and Patent Document 5.

以上述具有具L10結構之Fe-Pt磁性粒子的粒狀結構磁性薄膜而言,含有C作為非磁性材料之磁性薄膜,由於其磁特性特別高,因此受到矚目。然而,若欲對由Fe-Pt合金與C構成之濺鍍靶進行濺鍍,則會有下述問題:在濺鍍時發生C不慎脫離而產生大量顆粒(particle)(附著於基板上之塵埃)。 In the granular magnetic thin film having the Fe-Pt magnetic particles having the L1 0 structure, the magnetic thin film containing C as a nonmagnetic material is attracting attention because of its particularly high magnetic properties. However, if a sputtering target composed of an Fe-Pt alloy and C is to be sputtered, there is a problem in that C is inadvertently detached during sputtering to generate a large amount of particles (attached to the substrate). dust).

為了解決此問題,需要提供Fe-Pt合金與C之密合性經提高的濺鍍靶。又,雖使用含有代替C之碳化物或氮化物之靶,亦可得到優異之磁性薄膜,但於該情形時亦會有在濺鍍時產生大量顆粒之問題。 In order to solve this problem, it is necessary to provide a sputtering target in which the adhesion of the Fe-Pt alloy to C is improved. Further, although a magnetic thin film containing a carbide or a nitride instead of C is used, an excellent magnetic thin film can be obtained, but in this case, there is also a problem that a large amount of particles are generated at the time of sputtering.

以下所示之專利文獻6中記載有一種濺鍍靶,其含有Fe、Pt及C,進一步含有Fe、Pt以外之金屬元素,作為Fe、Pt以外之金屬元素,含有比0at%多且20at%以下之Cu、Ag、Mn、Ni、Co、Pd、Cr、V、B。然而,專利文獻6中僅有含有10at%之Cu之一例,與後述之本發明的添加元素之種類及含量差異很大。 Patent Document 6 shown below includes a sputtering target containing Fe, Pt, and C, and further contains a metal element other than Fe or Pt, and contains more than 0 at% and 20 at% as a metal element other than Fe or Pt. The following are Cu, Ag, Mn, Ni, Co, Pd, Cr, V, and B. However, in Patent Document 6, only one example of 10% by weight of Cu is contained, and the type and content of the additive element of the present invention described later are largely different.

又,下述專利文獻7中,根據製作於FePt合金相中分散有C相之燒結體之目的,揭示有將FePt合金粉與Pt粉及碳黑粉混合並進行熱壓之技術。然而,並未探討解決「於此情形時,濺鍍時會產生C脫離而顆粒(附著於基板上之塵埃)大量產生」此問題之對策。 Further, in the following Patent Document 7, a technique of mixing FePt alloy powder with Pt powder and carbon black powder and hot pressing is disclosed for the purpose of producing a sintered body of a C phase in a FePt alloy phase. However, there is no discussion on the solution to this problem in the case where C is detached during sputtering and a large amount of particles (dust attached to the substrate) are generated.

又,於下述專利文獻8中,記載有FePt(Au及/或Cu)C系之磁記錄媒體薄膜形成用濺鍍靶。揭示有亦可將上述Au及/或Cu之一部份置換成Ag之技術,且揭示有藉此抑制顆粒產生之技術。 Further, Patent Document 8 listed below discloses a sputtering target for forming a magnetic recording medium film of FePt (Au and/or Cu) C type. A technique for replacing one of the above Au and/or Cu with Ag is disclosed, and a technique for suppressing particle generation is disclosed.

又,下述專利文獻9中記載有FePtAgC系之磁記錄媒體薄膜形成用濺鍍靶。揭示有亦可將上述Ag之一部份置換成Au及/或Cu之技術,且揭示有藉此抑制顆粒產生之技術。 Further, Patent Document 9 listed below discloses a FePtAgC-based sputtering target for forming a magnetic recording medium film. There is disclosed a technique in which one part of the above Ag can be replaced with Au and/or Cu, and a technique for suppressing particle generation is disclosed.

上述專利文獻8與專利文獻9為相似的技術,但說明如下:由於為了抑制顆粒產生而添加之Ag、Au、Cu的熔點低,因此會有於熱壓時會先熔出之問題,而必須降低燒結溫度。 Patent Document 8 and Patent Document 9 are similar techniques, but are described as follows: Since Ag, Au, and Cu added to suppress generation of particles have a low melting point, there is a problem that they are first melted at the time of hot pressing, and must be Reduce the sintering temperature.

因此,為了防止上述情形,記載有:必須預先將作為原料之Ag、Au、Cu之粉製作成AgPt粉、AuPt粉、CuPt粉,將其等與其他原料粉混合而進行燒結。其具有造成製作步驟繁瑣之問題,亦有必須增加此等元素之添加量之問題。 Therefore, in order to prevent the above, it is described that Ag, Au, and Cu powders as raw materials are prepared into AgPt powder, AuPt powder, and CuPt powder, and are mixed with other raw material powders to be sintered. It has the problem of making the production steps cumbersome, and it is also necessary to increase the amount of addition of these elements.

專利文獻1:日本特開2000-306228號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2000-306228

專利文獻2:日本特開2000-311329號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 2000-311329

專利文獻3:日本特開2008-59733號公報 Patent Document 3: Japanese Laid-Open Patent Publication No. 2008-59733

專利文獻4:日本特開2008-169464號公報 Patent Document 4: Japanese Laid-Open Patent Publication No. 2008-169464

專利文獻5:日本特開2004-152471號公報 Patent Document 5: Japanese Patent Laid-Open Publication No. 2004-152471

專利文獻6:日本特開2012-214874號公報 Patent Document 6: Japanese Laid-Open Patent Publication No. 2012-214874

專利文獻7:日本特開2012-102387號公報 Patent Document 7: Japanese Laid-Open Patent Publication No. 2012-102387

專利文獻8:日本特開2012-178210號公報(專利第5041261號公報) Patent Document 8: Japanese Laid-Open Patent Publication No. 2012-178210 (Patent No. 5041261)

專利文獻9:日本特開2012-178211號公報(專利第5041262號公報) Patent Document 9: Japanese Laid-Open Patent Publication No. 2012-178211 (Patent No. 5041262)

上述Fe-Pt合金雖然在1:1組成附近會形成L10規則晶格,但會有下述問題:一般而言結晶結構為規則晶格之材料缺乏延展性,此種材料即便使用加壓燒結裝置進行燒結,亦難以提高燒結體之密度。特別是含有難燒結材料之C(碳)之Fe-Pt-C系極難獲得緻密的燒結體。因此若對此種密度低的燒結體濺鍍靶進行濺鍍,則會有下述問題:發生非磁性材料不慎脫離而產生大量顆粒(附著於基板上之塵埃)。 Although the Fe-Pt alloy forms an L1 0 regular lattice near the 1:1 composition, there is a problem that the material having a regular crystal lattice is generally not ductile, and the material is subjected to pressure sintering. It is also difficult to increase the density of the sintered body by sintering the apparatus. In particular, the Fe-Pt-C system containing C (carbon) which is a hard-to-sinter material is extremely difficult to obtain a dense sintered body. Therefore, if such a low-density sintered sputtering target is sputtered, there is a problem in that a large amount of particles (dust adhering to the substrate) are generated by inadvertently removing the non-magnetic material.

又,Fe-Pt合金之L10規則晶格若加熱至1300℃以上,雖然會從規則狀態轉移成不規則狀態而增加延展性,但會有根據其中所含有之非磁性材料的種類而於1300℃以上的溫度分解的情況。而且有下述問題:在1300℃以上之高溫域中,會有發生結晶粒成長導致之燒結體組織粗大化之情形,此種粗大的結晶粒會成為濺鍍時異常放電(電弧)之起點,而產 生顆粒。 Further, when the L1 0 regular crystal lattice of the Fe-Pt alloy is heated to 1300 ° C or higher, the ductility is changed from a regular state to an irregular state, but the ductility is increased depending on the kind of the non-magnetic material contained therein. The temperature is decomposed above °C. Further, there is a problem that in the high temperature region of 1300 ° C or higher, the sintered body structure is coarsened due to the growth of crystal grains, and such coarse crystal grains become the starting point of abnormal discharge (arc) at the time of sputtering. And produce particles.

因此,本發明其課題在於提供一種大幅減低濺鍍時所產生之顆粒量,且可有效率地製造之燒結體濺鍍靶,其係由Fe-Pt系合金與非磁性材料構成。 Accordingly, an object of the present invention is to provide a sintered body sputtering target which can be efficiently produced by reducing the amount of particles generated during sputtering, and which is composed of an Fe-Pt-based alloy and a non-magnetic material.

本發明人於製作以Fe-Pt合金與至少含有C(碳)之非磁性材料作為主成分之燒結體濺鍍靶時,雖然使其含有50質量ppm~5000質量ppm之微量添加元素,但藉由添加作為此微量添加元素之下述微量元素(亦即,添加容易成為碳化物的元素),可形成潤濕性比C單質良好之碳化物,藉由此碳化物可提高Fe-Pt系合金與C之密合性,又,上述微量元素係碳化物之每1mol之碳的標準生成自由能△G°為-5000[cal/mol]以下者。 When the present inventors produced a sintered body sputtering target having a Fe-Pt alloy and a non-magnetic material containing at least C (carbon) as a main component, the present invention contains a trace amount of an additive element of 50 ppm by mass to 5000 ppm by mass. By adding the following trace elements as the trace addition elements (that is, adding an element which is likely to be a carbide), a carbide having a better wettability than the C element can be formed, whereby the Fe-Pt-based alloy can be improved by the carbide In addition, the standard production free energy ΔG° per 1 mol of the above-mentioned trace element-based carbide is not more than -5000 [cal/mol].

其係作為本案發明之基礎,其結果,得到可大幅減少燒結體濺鍍靶於濺鍍時所產生之顆粒此見解。再者,以下所說明之燒結原料全都使用原料粉末。 This is the basis of the invention of the present invention, and as a result, it is obtained that the particles generated during the sputtering of the sintered body sputtering target can be greatly reduced. Further, all of the sintering raw materials described below use the raw material powder.

根據上述見解,本發明提供:1)一種燒結體濺鍍靶,以Fe-Pt合金與非磁性材料為主成分,其特徵在於:至少含有C(碳)作為非磁性材料,於上述主成分以外進一步以50質量ppm~5000質量ppm之範圍含有微量添加元素,該微量添加元素之碳化物之每1mol之碳的標準生成自由能△G°為-5000[cal/mol]以下;2)如上述1)記載之燒結體濺鍍靶,其中,上述微量添加元素係W、Cr之任一種以上;3)如上述1或2)記載之燒結體濺鍍靶,其中,作為非磁性材料,除了上述C(碳)以外,還含有氧化物、氮化物、碳化物中之任一種以上; 4)如上述1至3)中任一項記載之燒結體濺鍍靶,其中,除了上述主成分及微量添加元素以外,還含有選自Ag、Au、Co、Cu、Ga、Ge、Ir、Ni、Pd、Re、Rh、Ru、Sn、Zn中之一種以上之元素來作為金屬成分。 According to the above findings, the present invention provides: 1) a sintered body sputtering target comprising a Fe-Pt alloy and a non-magnetic material as a main component, characterized in that at least C (carbon) is contained as a non-magnetic material, other than the above-mentioned main components. Further, a trace amount of the additive element is contained in a range of 50 ppm by mass to 5000 ppm by mass, and a standard production free energy ΔG° per 1 mol of carbon of the trace addition element carbide is -5000 [cal/mol] or less; 2) (1) The sintered body sputtering target according to any one of the above-mentioned 1 or 2), wherein the sintered body sputtering target is a non-magnetic material, in addition to the above-mentioned In addition to C (carbon), it may contain any one or more of an oxide, a nitride, and a carbide; The sintered body sputtering target according to any one of the above 1 to 3, further comprising, in addition to the main component and the trace addition element, Ag, Au, Co, Cu, Ga, Ge, Ir, One or more elements of Ni, Pd, Re, Rh, Ru, Sn, and Zn are used as the metal component.

又,本發明提供:5)一種燒結體濺鍍靶之製造方法,該燒結體濺鍍靶以Fe-Pt合金與非磁性材料為主成分,其特徵在於:準備在形成Fe粉、Pt粉、C粉(石墨粉)及碳化物之情形時每1mol之碳的標準生成自由能△G°為-5000[cal/mol]以下之微量添加元素粉作為原料粉,於Ar環境中將此等粉末混合、粉碎,將混合、粉碎後之粉末填充於碳製模具中,使用熱壓裝置,於真空環境將升溫速度設為200~600℃/小時、保持溫度800~1400℃、保持時間0~4小時,自升溫開始至保持結束以20~50MPa進行加壓從而製造燒結體;6)如上述5)記載之燒結體濺鍍靶之製造方法,其中,上述微量添加元素係W、Cr之任一種以上;7)如上述5)或6)記載之燒結體濺鍍靶之製造方法,其中,作為非磁性材料之原料粉,除了上述C(碳)以外,還含有氧化物、氮化物、碳化物中之任一種以上而進行燒結;8)如上述5至7)中任一項記載之燒結體濺鍍靶之製造方法,其進一步含有選自Ag、Au、Co、Cu、Ga、Ge、Ir、Ni、Pd、Re、Rh、Ru、Sn、Zn中之一種以上之元素來作為金屬成分之原料,而進行燒結。 Further, the present invention provides: 5) a method for producing a sintered body sputtering target comprising Fe-Pt alloy and a non-magnetic material as main components, wherein: the Fe powder and the Pt powder are prepared. In the case of C powder (graphite powder) and carbide, a standard amount of carbon having a standard free energy ΔG° of -5000 [cal/mol] or less is used as a raw material powder, and these powders are used in an Ar environment. After mixing and pulverizing, the mixed and pulverized powder is filled in a carbon mold, and the temperature increase rate is set to 200 to 600 ° C / hour, the temperature is maintained at 800 to 1400 ° C, and the holding time is 0 to 4 in a vacuum environment using a hot press device. In the method of producing a sintered body sputtering target according to the above 5), the method for producing a sintered body sputtering target according to the above 5), wherein the trace amount of the element is W or Cr The method for producing a sintered body sputtering target according to the above 5) or 6), wherein the raw material powder as the non-magnetic material contains an oxide, a nitride, and a carbide in addition to the C (carbon). Sintering according to any one of the above; 8) as in the above 5 to 7) A method for producing a sintered body sputtering target according to the invention, further comprising one or more selected from the group consisting of Ag, Au, Co, Cu, Ga, Ge, Ir, Ni, Pd, Re, Rh, Ru, Sn, and Zn. The element is sintered as a raw material of the metal component.

根據本發明,可提供一種於濺鍍時大幅減低所產生之顆粒量的濺鍍靶。藉此,具有可顯著提高成膜時之產率,且可提高生產性之優異效果。 According to the present invention, it is possible to provide a sputtering target which greatly reduces the amount of particles generated during sputtering. Thereby, there is an excellent effect that the productivity at the time of film formation can be remarkably improved, and productivity can be improved.

本發明之以Fe-Pt合金與非磁性材料作為主成分之燒結體濺鍍靶,其特徵在於:至少含有C(碳)作為非磁性材料,於上述主成分以外進一步以50質量ppm~5000質量ppm之範圍含有微量添加元素,該微量添加元素之碳化物之每1mol之碳的標準生成自由能△G°為-5000[cal/mol]以下。 A sintered body sputtering target having a Fe-Pt alloy and a non-magnetic material as a main component of the present invention, characterized in that it contains at least C (carbon) as a non-magnetic material, and further has a mass of 50 ppm by mass to 5,000 in addition to the above main component. The range of ppm contains a trace amount of an additive element, and the standard production free energy ΔG° per 1 mol of the carbon of the trace addition element is -5000 [cal/mol] or less.

上述微量添加元素之代表材料為W、Cr,添加其等中之任一種以上為有效。然而,只要為滿足於燒結之溫度區域中,該微量添加元素之碳化物之每1mol之碳的標準生成自由能△G°在-5000[cal/mol]以下之條件者,則使用其他元素也不會有特別之問題。 The representative material of the above-mentioned trace addition element is W or Cr, and it is effective to add any one or more of them. However, as long as it is satisfied that the standard production free energy ΔG° per 1 mol of carbon of the carbide of the trace addition element is within the range of -5000 [cal/mol] in the temperature region satisfying the sintering, other elements are also used. There will be no special problems.

Fe-Pt合金之組成,一般可使用以原子數比率中Pt為35%以上且55%以下,剩餘部份為Fe之比例進行摻合者,但若為可維持有效之作為磁記錄媒體的特性之範圍內,則無特別限制。濺鍍靶中之Fe-Pt合金通常由L10型規則晶格構成,但於此方面亦無限制。 The composition of the Fe-Pt alloy can be generally used in a ratio of Pt of 35% or more and 55% or less in the atomic ratio, and the remainder is Fe. However, if it is a magnetic recording medium which can be effectively maintained There are no special restrictions within the scope. The Fe-Pt alloy in the sputtering target is usually composed of a L1 0 type regular lattice, but there is no limitation in this respect.

本案發明中特別重要的是,作為濺鍍靶之微量添加元素,使用(添加)下述微量元素:此添加元素在形成碳化物之情形時之每1mol之碳的標準生成自由能△G°為-5000[cal/mol]以下。又,C之含量,若為可維持有效之作為磁記錄媒體的特性之範圍內,則無特別限制,但較理想為設定為以濺鍍靶中之體積比率計在20~45%之範圍內。 In the invention of the present invention, it is particularly important to use (add) a trace element as a sputtering target: the standard formation free energy ΔG° per 1 mol of carbon in the case of forming the carbide is -5000 [cal/mol] or less. Further, the content of C is not particularly limited as long as it is effective as a magnetic recording medium, but it is preferably set to be in the range of 20 to 45% by volume ratio in the sputtering target. .

也就是說,形成為:藉由添加容易成為碳化物的元素,可形 成潤濕性比C單質良好之碳化物,藉由此碳化物可提高Fe-Pt系合金與C之密合性。 That is to say, it is formed by adding an element which is easy to become a carbide A carbide having a better wettability than C, whereby the carbide can improve the adhesion of the Fe-Pt alloy to C.

此結果,燒結體濺鍍靶於濺鍍時可抑制C脫落,可大幅減低所產生之顆粒量。 As a result, the sintered body sputtering target can suppress the seizure of C during sputtering, and the amount of particles generated can be greatly reduced.

如上所述,作為微量添加元素,W、Cr為有效,添加其等之中的任一種以上即可。以下針對使用主要作為代表之微量添加元素之W、Cr之情形進行說明。 As described above, as a trace addition element, W and Cr are effective, and any one or more of them may be added. Hereinafter, the case of using W and Cr which are mainly representative of the trace addition elements will be described.

上述W或Cr之含量設為50質量ppm~5000質量ppm。若含量未達50質量ppm,則潤濕性良好的碳化物之形成不足,無法期望提高Fe-Pt合金與C之密合性,另一方面,若含量超過5000質量ppm,則可能變得無法得到作為磁性薄膜之充分的磁特性。 The content of W or Cr described above is set to 50 ppm by mass to 5000 ppm by mass. When the content is less than 50 ppm by mass, the formation of a carbide having good wettability is insufficient, and the adhesion between the Fe-Pt alloy and C cannot be expected to be improved. On the other hand, if the content exceeds 5,000 ppm by mass, the content may become impossible. A sufficient magnetic property as a magnetic film is obtained.

含有W或Cr之任一者或兩者皆可獲得相同的效果。於含有兩者之情形時,其合計含量以濺鍍靶整體之含有比率計設為50質量ppm~5000質量ppm為較佳。 The same effect can be obtained by either or both of W or Cr. In the case where both are contained, the total content thereof is preferably 50 ppm by mass to 5000 ppm by mass based on the total content of the sputtering target.

又,本發明之濺鍍靶,作為非磁性材料,除了上述C(碳)以外,還可含有氧化物、氮化物、碳化物中之任一種以上。於此情形時,較佳之氧化物可列舉選自Al、B、Ba、Be、Ca、Ce、Cr、Dy、Er、Eu、Ga、Gd、Ho、Li、Mg、Mn、Nb、Nd、Pr、Sc、Sm、Sr、Ta、Tb、Ti、V、Y、Zn、Zr中之一種以上的元素之氧化物。又,作為較佳之氮化物,可列舉選自Al、B、Ca、Nb、Si、Ta、Ti、Zr中之一種以上的元素之氮化物。又,作為較佳之碳化物,可列舉選自B、Ca、Nb、Si、Ta、Ti、W、Zr中之一種以上的元素之碳化物。由此種濺鍍靶製得之磁性膜,由於碳、碳化物、氮化 物、氧化物具有使磁性粒子彼此之磁相互作用絕緣的結構,故可期待良好之磁特性。 Further, the sputtering target of the present invention may contain, as a nonmagnetic material, any one or more of an oxide, a nitride, and a carbide in addition to the above C (carbon). In this case, preferred oxides are selected from the group consisting of Al, B, Ba, Be, Ca, Ce, Cr, Dy, Er, Eu, Ga, Gd, Ho, Li, Mg, Mn, Nb, Nd, Pr. An oxide of one or more of Sc, Sm, Sr, Ta, Tb, Ti, V, Y, Zn, and Zr. Moreover, as a preferable nitride, a nitride of an element selected from one or more of Al, B, Ca, Nb, Si, Ta, Ti, and Zr may be mentioned. Further, as a preferred carbide, a carbide selected from one or more of B, Ca, Nb, Si, Ta, Ti, W, and Zr may be mentioned. The magnetic film produced by such a sputtering target, due to carbon, carbide, and nitriding Since the substance and the oxide have a structure in which the magnetic particles are magnetically insulated from each other, good magnetic properties can be expected.

又,本發明之濺鍍靶,除了上述主成分及微量添加元素以外,還可進一步含有選自Ag、Au、Co、Cu、Ga、Ge、Ir、Ni、Pd、Re、Rh、Ru、Sn、Zn中之一種以上之元素來作為金屬成分。 Further, the sputtering target of the present invention may further contain, in addition to the main component and the trace addition element, Ag, Au, Co, Cu, Ga, Ge, Ir, Ni, Pd, Re, Rh, Ru, Sn. One or more elements of Zn are used as the metal component.

此等金屬元素係於經濺鍍之薄膜中,主要為了降低用於表現L10結構之熱處理溫度而添加者。其摻合比例只要為可維持有效之作為磁記錄媒體之特性的範圍內,則無特別限制。 These metal elements are incorporated into the sputtered film and are primarily added to reduce the heat treatment temperature used to characterize the L1 0 structure. The blending ratio is not particularly limited as long as it is within a range in which the characteristics of the magnetic recording medium can be maintained effectively.

本發明之濺鍍靶係使用粉末燒結法,例如可藉由下述方法來製作。 The sputtering target of the present invention is produced by a powder sintering method, for example, by the following method.

首先,準備Fe粉、Pt粉、Cr粉、Cu粉、W粉等作為金屬粉。作為金屬粉,不僅可使用單一元素之金屬粉,亦可使用合金粉。此等金屬粉宜使用粒徑在1~10μm之範圍者。若粒徑在1~10μm,則可更均勻混合,可防止偏析與粗大結晶化。 First, Fe powder, Pt powder, Cr powder, Cu powder, W powder, or the like is prepared as a metal powder. As the metal powder, not only a single element metal powder but also an alloy powder can be used. These metal powders should preferably be used in a particle size range of 1 to 10 μm. When the particle diameter is 1 to 10 μm, it can be more uniformly mixed, and segregation and coarse crystallization can be prevented.

當金屬粉末之粒徑大於10μm之情形時,有時非磁性材料會無法均勻地分散,又,當小於1μm之情形時,有時會發生下述問題:因金屬粉氧化之影響,而導致靶組成不是想要之組成。另,此粒徑範圍僅為較佳範圍,應理解脫離此範圍並非否定本案發明之條件。 When the particle diameter of the metal powder is larger than 10 μm, sometimes the non-magnetic material may not be uniformly dispersed, and when it is less than 1 μm, the following problem sometimes occurs: the target is caused by the oxidation of the metal powder. Composition is not the desired composition. In addition, the particle size range is only a preferred range, and it should be understood that the scope of the invention is not negated.

又,除了上述C(碳)以外,亦準備氧化物粉、氮化物粉、碳化物粉等作為非磁性材料粉末。此等非磁性材料粉末宜使用粒徑在1~30μm之範圍者。若粒徑為1~30μm,則在與前述之金屬粉混合時,非磁性材料粉彼此不易凝聚,而可使之均勻地分散。 Further, in addition to the above C (carbon), an oxide powder, a nitride powder, a carbide powder or the like is prepared as a nonmagnetic material powder. These non-magnetic material powders are preferably used in a particle size range of 1 to 30 μm. When the particle diameter is 1 to 30 μm, the non-magnetic material powders are less likely to aggregate with each other when mixed with the metal powder described above, and can be uniformly dispersed.

關於非磁性材料中之C粉,具有如石墨(graphite)或奈米管般具有結晶結構者與以碳黑所代表之非晶質者,可使用任一種之C粉。 As the C powder in the non-magnetic material, those having a crystal structure such as graphite or a nanotube and amorphous ones represented by carbon black may be used.

在製造燒結體濺鍍靶時,將作為原料粉之Fe粉、Pt粉、C粉(石墨粉),及於形成碳化物之情形時之每1mol之碳的標準生成自由能△G°為-5000[cal/mol]以下的微量添加金屬粉秤量成既定組成,將此等粉末於Ar環境中使用球磨機等公知手段進行粉碎兼混合。 In the production of the sintered body sputtering target, Fe powder, Pt powder, C powder (graphite powder) as a raw material powder, and a standard generation free energy ΔG° per 1 mol of carbon in the case of forming a carbide are - The micro-added metal powder of 5000 [cal/mol] or less is weighed into a predetermined composition, and these powders are pulverized and mixed in a Ar environment using a known means such as a ball mill.

將此混合/粉碎後之粉末填充於碳製模具中,使用熱壓裝置,於真空環境或非活性環境中,將升溫速度設為200~600℃/小時、保持溫度設為800~1400℃、保持時間設為0~4小時、自升溫開始時至保持結束以20~50MPa進行加壓,從而製造燒結體。 The mixed/pulverized powder is filled in a carbon mold, and the temperature increase rate is set to 200 to 600 ° C / hour, and the holding temperature is set to 800 to 1400 ° C in a vacuum environment or an inactive environment using a hot press device. The holding time is set to 0 to 4 hours, and pressurization is performed at 20 to 50 MPa from the start of the temperature rise to the end of the holding, thereby producing a sintered body.

除了前述熱壓以外,亦可使用電漿放電燒結法等各種加壓燒結方法。尤其是熱靜水壓燒結法對提升燒結體密度是有效的。燒結時的保持溫度,雖然亦取決於靶之構成成分,但大多數的情形是在800℃~1400℃的溫度範圍。然後,以車床將所製得之燒結體加工成想要的形狀,藉此可製作本發明之濺鍍靶。 In addition to the above-described hot pressing, various pressure sintering methods such as a plasma discharge sintering method can also be used. In particular, the hot hydrostatic sintering method is effective for increasing the density of the sintered body. The holding temperature at the time of sintering depends on the constituent components of the target, but most of the cases are in the temperature range of 800 ° C to 1400 ° C. Then, the sintered body obtained is processed into a desired shape by a lathe, whereby the sputtering target of the present invention can be produced.

藉由上述方式可製造本發明之濺鍍靶。以此方式製得之濺鍍靶,具有下述優異之效果:可降低濺鍍時產生之顆粒量,提升成膜時之產率。 The sputtering target of the present invention can be produced by the above method. The sputtering target produced in this manner has an excellent effect of reducing the amount of particles generated at the time of sputtering and improving the yield at the time of film formation.

實施例 Example

以下,根據實施例及比較例來說明。另,本實施例僅為一例示,並不受到此例示的任何限制。亦即,本發明僅受到申請專利範圍的限制,包含本發明所含之實施例以外的各種變形。 Hereinafter, it demonstrates based on an Example and a comparative example. In addition, this embodiment is merely an example and is not limited by this illustration. That is, the present invention is limited only by the scope of the patent application, and includes various modifications other than the embodiments included in the invention.

(實施例1) (Example 1)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑3μm之W粉、平均粒徑10μm之C粉(石墨粉)作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, W powder having an average particle diameter of 3 μm, and C powder (graphite powder) having an average particle diameter of 10 μm were prepared as raw material powders.

將基本成分設為秤量組成(莫耳比率):30Fe-30Pt-40C,以上述秤量組成比秤量成合計重量為2600g。 The basic component was set to a weighing composition (molar ratio): 30Fe-30Pt-40C, and the total weight of the above-mentioned weighing amount was 2600 g.

進一步秤量5.2g之W作為微量添加成分。 Further weigh 5.2 g of W as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋(ball mill pot),於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1400℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill pot having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1400 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、W係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。其結果,於濺鍍靶中W含量為1990質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):30.09Fe-30.04Pt-39.87C。 Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, and W were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. As a result, the W content in the sputtering target was 1990 mass ppm. Further, regarding the basic component, the result of calculating the molar ratio based on the weight ratio obtained by the analysis, the composition of the sputtering target was an analysis composition (molar ratio): 30.09Fe-30.04Pt-39.87C.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。將此靶安裝於磁控濺鍍裝置(佳能安內華(CANON ANELVA)製C-3010濺鍍系統)進行濺鍍。使濺鍍條件為輸入電功率1kW、Ar氣壓1.7Pa,實施2kWhr的預濺鍍後,在4吋直徑的矽基 板上成膜20秒。然後以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為185個。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. This target was mounted on a magnetron sputtering apparatus (CON-10 AN-C-3010 sputtering system) for sputtering. The sputtering conditions were as follows: input electric power 1 kW, Ar gas pressure 1.7 Pa, and 2 kWhr pre-sputtering, after 4 吋 diameter ruthenium base The film was formed on the plate for 20 seconds. The number of particles attached to the substrate is then measured with a particle counter. The number of particles at this time was 185.

(比較例1) (Comparative Example 1)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑3μm之W粉、平均粒徑10μm之C粉(石墨粉)作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, W powder having an average particle diameter of 3 μm, and C powder (graphite powder) having an average particle diameter of 10 μm were prepared as raw material powders.

將基本成分設為秤量組成(莫耳比率):30Fe-30Pt-40C,以上述秤量組成比秤量成合計重量為2600g。 The basic component was set to a weighing composition (molar ratio): 30Fe-30Pt-40C, and the total weight of the above-mentioned weighing amount was 2600 g.

進一步秤量0.13g之W作為微量添加成分。 Further, 0.13 g of W was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1400℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1400 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、W係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。其結果,於濺鍍靶中W含量為40質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):30.20Fe-30.08Pt-39.72C。 Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, and W were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. As a result, the W content in the sputtering target was 40 ppm by mass. Further, as a result of calculating the molar ratio based on the weight ratio obtained by the analysis on the basic component, the composition of the sputtering target was an analysis composition (molar ratio): 30.20Fe-30.08 Pt-39.72C.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,以與實施例1相同之條件進 行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為498個,較實施例1增加。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, the same conditions as in Example 1 were carried out. The sputtering is performed, and the number of particles attached to the substrate is measured by a particle counter. The number of particles at this time was 498, which was larger than that of Example 1.

(比較例2) (Comparative Example 2)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑3μm之W粉、平均粒徑10μm之C粉(石墨粉)作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, W powder having an average particle diameter of 3 μm, and C powder (graphite powder) having an average particle diameter of 10 μm were prepared as raw material powders.

將基本成分設為秤量組成(莫耳比率):30Fe-30Pt-40C,以上述秤量組成比秤量成合計重量為2600g。 The basic component was set to a weighing composition (molar ratio): 30Fe-30Pt-40C, and the total weight of the above-mentioned weighing amount was 2600 g.

進一步秤量52.0g之W作為微量添加成分。 Further, 52.0 g of W was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1400℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1400 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、W係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。其結果,於濺鍍靶中W含量為20100質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):30.07Fe-30.01Pt-39.92C。 Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, and W were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. As a result, the W content in the sputtering target was 20100 ppm by mass. Further, as a result of calculating the molar ratio based on the weight ratio by analysis, the composition of the sputtering target was an analysis composition (molar ratio): 30.07Fe-30.01 Pt-39.92C.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,以與實施例1相同之條件進 行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為354個,較實施例1增加。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, the same conditions as in Example 1 were carried out. The sputtering is performed, and the number of particles attached to the substrate is measured by a particle counter. The number of particles at this time was 354, which was larger than that of Example 1.

另一方面,若與實施例1相比,無法得到充分的磁特性。認為此係由於W的含量過多,故飽和磁化或結晶磁異向性能量降低。 On the other hand, when compared with Example 1, sufficient magnetic characteristics could not be obtained. It is considered that since the content of W is too large, the saturation magnetization or the crystal magnetic anisotropy energy is lowered.

(實施例2) (Example 2)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑10μm之C粉(石墨粉)、平均粒徑3μm之Cr粉作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, C powder (graphite powder) having an average particle diameter of 10 μm, and Cr powder having an average particle diameter of 3 μm were prepared as raw material powders.

將基本成分設為秤量組成(莫耳比率):30Fe-30Pt-40C,以上述秤量組成比秤量成合計重量為2600g。 The basic component was set to a weighing composition (molar ratio): 30Fe-30Pt-40C, and the total weight of the above-mentioned weighing amount was 2600 g.

進一步秤量2.6g之Cr作為微量添加成分。 Further, 2.6 g of Cr was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1300℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1300 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、Cr係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。其結果,於濺鍍靶中Cr含量為990質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):29.85Fe-30.10Pt-40.05C。 Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, and Cr were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. As a result, the Cr content in the sputtering target was 990 ppm by mass. Further, as a result of calculating the molar ratio based on the weight ratio obtained by the analysis on the basic component, the composition of the sputtering target was an analysis composition (molar ratio): 29.85Fe-30.10 Pt-40.05C.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,以與實施例1相同之條件進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為255個。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, sputtering was carried out under the same conditions as in Example 1, and the number of particles attached to the substrate was measured with a particle counter. The number of particles at this time is 255.

(比較例3) (Comparative Example 3)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑10μm之C粉(石墨粉)、平均粒徑3μm之Cr粉作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, C powder (graphite powder) having an average particle diameter of 10 μm, and Cr powder having an average particle diameter of 3 μm were prepared as raw material powders.

將基本成分設為秤量組成(莫耳比率):30Fe-30Pt-40C,以上述秤量組成比秤量成合計重量為2600g。 The basic component was set to a weighing composition (molar ratio): 30Fe-30Pt-40C, and the total weight of the above-mentioned weighing amount was 2600 g.

進一步秤量0.13g之Cr作為微量添加成分。 Further, 0.13 g of Cr was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1300℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1300 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、Cr係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。其結果,於濺鍍靶中Cr含量為30質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):30.23Fe-29.85Pt-39.92C。 Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, and Cr were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. As a result, the Cr content in the sputtering target was 30 ppm by mass. Further, as a result of calculating the molar ratio based on the weight ratio obtained by the analysis on the basic component, the composition of the sputtering target was an analytical composition (molar ratio): 30.23Fe-29.85 Pt-39.92C.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,安裝於磁控濺鍍裝置,以與實施例1相同之條件進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為658個,較實施例2增加。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, it was mounted on a magnetron sputtering apparatus, and sputtering was performed under the same conditions as in Example 1, and the number of particles attached to the substrate was measured by a particle counter. The number of particles at this time was 658, which was larger than that of Example 2.

(比較例4) (Comparative Example 4)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑10μm之C粉(石墨粉)、平均粒徑3μm之Cr粉作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, C powder (graphite powder) having an average particle diameter of 10 μm, and Cr powder having an average particle diameter of 3 μm were prepared as raw material powders.

將基本成分設為秤量組成(莫耳比率):30Fe-30Pt-40C,以上述秤量組成比秤量成合計重量為2600g。 The basic component was set to a weighing composition (molar ratio): 30Fe-30Pt-40C, and the total weight of the above-mentioned weighing amount was 2600 g.

進一步秤量26g之Cr作為微量添加成分。 Further, 26 g of Cr was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1300℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1300 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、Cr係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。其結果,於濺鍍靶中Cr含量為10200質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):30.05Fe-30.10Pt-39.85C。 Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, and Cr were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. As a result, the Cr content in the sputtering target was 10,200 ppm by mass. Further, regarding the basic component, the result of calculating the molar ratio based on the weight ratio obtained by the analysis, the composition of the sputtering target was an analysis composition (molar ratio): 30.05Fe-30.10 Pt-39.85C.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,以與實施例1相同之條件進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為325個,與實施例2幾乎為同程度。另一方面,若與實施例2相比,無法得到充分的磁特性。認為此係由於Cr的含量多,故飽和磁化或結晶磁異向性能量降低。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, sputtering was carried out under the same conditions as in Example 1, and the number of particles attached to the substrate was measured with a particle counter. The number of particles at this time was 325, which was almost the same as in Example 2. On the other hand, when compared with Example 2, sufficient magnetic characteristics could not be obtained. It is considered that since the content of Cr is large, the saturation magnetization or the crystal magnetic anisotropy energy is lowered.

(實施例3) (Example 3)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑3μm之W粉、平均粒徑3μm之Cr粉、平均粒徑10μm之C粉(石墨粉)、平均粒徑10μm之BN粉作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, W powder having an average particle diameter of 3 μm, Cr powder having an average particle diameter of 3 μm, C powder (graphite powder) having an average particle diameter of 10 μm, and an average particle diameter of 10 μm were prepared. BN powder is used as a raw material powder.

將基本成分設為秤量組成(莫耳比率):35Fe-35Pt-20C-10BN,以上述秤量組成比秤量成合計重量為2600g。 The basic component was set to a weighing composition (molar ratio): 35Fe-35Pt-20C-10BN, and the total weight was 2600 g in terms of the above-mentioned weighing composition.

進一步秤量5.2g之W、5.2g之Cr作為微量添加成分。 Further, 5.2 g of W and 5.2 g of Cr were weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1200℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1200 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、B、W、Cr係使用ICP-AES裝置進行測定。BN之含量係根據B之測定值使用化學計算比率來計算。又,C係利用採用高頻感應加熱爐燃 燒-紅外線吸收法之碳分析裝置進行測定。其結果,於濺鍍靶中W含量為2000質量ppm、於濺鍍靶中Cr含量為2050質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):34.91Fe-35.35Pt-20.04C-9.70BN。 Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, B, W, and Cr were measured using an ICP-AES apparatus. The content of BN is calculated based on the measured value of B using a stoichiometric ratio. In addition, the C system uses a high-frequency induction heating furnace to burn The carbon analyzer of the burn-infrared absorption method was measured. As a result, the W content in the sputtering target was 2000 ppm by mass, and the Cr content in the sputtering target was 2050 ppm by mass. Further, as a result of calculating the molar ratio based on the weight ratio obtained by analysis regarding the basic component, the composition of the sputtering target was an analytical composition (molar ratio): 34.91Fe-35.35Pt-20.04C-9.70BN.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,安裝於磁控濺鍍裝置進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為211個。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, it was mounted on a magnetron sputtering device for sputtering, and the particle counter was used to measure the number of particles attached to the substrate. The number of particles at this time was 211.

(比較例5) (Comparative Example 5)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑3μm之W粉、平均粒徑3μm之Cr粉、平均粒徑10μm之C粉(石墨粉)、平均粒徑10μm之BN粉作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, W powder having an average particle diameter of 3 μm, Cr powder having an average particle diameter of 3 μm, C powder (graphite powder) having an average particle diameter of 10 μm, and an average particle diameter of 10 μm were prepared. BN powder is used as a raw material powder.

將基本成分設為秤量組成(莫耳比率):35Fe-35Pt-20C-10BN,以上述秤量組成比秤量成合計重量為2600g。 The basic component was set to a weighing composition (molar ratio): 35Fe-35Pt-20C-10BN, and the total weight was 2600 g in terms of the above-mentioned weighing composition.

進一步秤量0.06g之W、0.06g之Cr作為微量添加成分。 Further, 0.06 g of W and 0.06 g of Cr were weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1200℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1200 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分 析。Fe、Pt、B、W、Cr係使用ICP-AES裝置進行測定。BN之含量係根據B之測定值使用化學計算比率來計算。又,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。其結果,於濺鍍靶中W含量為20質量ppm、於濺鍍靶中Cr含量為20質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):35.09Fe-35.11Pt-19.87C-9.93BN。 Then, using a sintered body produced from the obtained body, a part is obtained, and the component is implemented. Analysis. Fe, Pt, B, W, and Cr were measured using an ICP-AES apparatus. The content of BN is calculated based on the measured value of B using a stoichiometric ratio. Further, the C system is measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. As a result, the W content in the sputtering target was 20 ppm by mass, and the Cr content in the sputtering target was 20 ppm by mass. Further, as a result of calculating the molar ratio based on the weight ratio by analysis, the composition of the sputtering target is the analysis composition (molar ratio): 35.09Fe-35.11Pt-19.87C-9.93BN.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,安裝於磁控濺鍍裝置,以與實施例1相同之條件進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為375個,較實施例3增加。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, it was mounted on a magnetron sputtering apparatus, and sputtering was performed under the same conditions as in Example 1, and the number of particles attached to the substrate was measured by a particle counter. The number of particles at this time was 375, which was increased compared with Example 3.

(比較例6) (Comparative Example 6)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑3μm之W粉、平均粒徑3μm之Cr粉、平均粒徑10μm之C粉(石墨粉)、平均粒徑10μm之BN粉作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, W powder having an average particle diameter of 3 μm, Cr powder having an average particle diameter of 3 μm, C powder (graphite powder) having an average particle diameter of 10 μm, and an average particle diameter of 10 μm were prepared. BN powder is used as a raw material powder.

將基本成分設為秤量組成(莫耳比率):35Fe-35Pt-20C-10BN,以上述秤量組成比秤量成合計重量為2600g。 The basic component was set to a weighing composition (molar ratio): 35Fe-35Pt-20C-10BN, and the total weight was 2600 g in terms of the above-mentioned weighing composition.

進一步秤量5.2g之W、13.0g之Cr作為微量添加成分。 Further, 5.2 g of W and 13.0 g of Cr were weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1200℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接 在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1200 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. Directly after the end Cool naturally in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、B、W、Cr係使用ICP-AES裝置進行測定。BN之含量係根據B之測定值使用化學計算比率來計算。又,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。其結果,於濺鍍靶中W含量為1980質量ppm、於濺鍍靶中Cr含量為5030質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):34.94Fe-35.26Pt-19.97C-9.83BN。 Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, B, W, and Cr were measured using an ICP-AES apparatus. The content of BN is calculated based on the measured value of B using a stoichiometric ratio. Further, the C system is measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. As a result, the W content in the sputtering target was 1980 ppm by mass, and the Cr content in the sputtering target was 5030 ppm by mass. Further, as a result of calculating the molar ratio based on the weight ratio by analysis, the composition of the sputtering target was an analytical composition (molar ratio): 34.94Fe-35.26Pt-19.97C-9.83BN.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,安裝於磁控濺鍍裝置進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為208個,與實施例3幾乎同程度。另一方面,若與實施例3相比,無法得到充分的磁特性。認為此係由於W與Cr的含量多,故飽和磁化或結晶磁異向性能量降低。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, it was mounted on a magnetron sputtering device for sputtering, and the particle counter was used to measure the number of particles attached to the substrate. The number of particles at this time was 208, which was almost the same as in Example 3. On the other hand, when compared with Example 3, sufficient magnetic characteristics could not be obtained. It is considered that since the content of W and Cr is large, the saturation magnetization or the crystal magnetic anisotropy energy is lowered.

(實施例4) (Example 4)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑10μm之B粉、平均粒徑10μm之C粉(石墨粉)、平均粒徑5μm之SiO2粉作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, B powder having an average particle diameter of 10 μm, C powder (graphite powder) having an average particle diameter of 10 μm, and SiO 2 powder having an average particle diameter of 5 μm were prepared as raw material powders.

將基本成分設為秤量組成(莫耳比率):35Fe-35Pt-25C-5SiO2,以上述秤量組成比秤量成合計重量為2500g。 The basic component was set to a weighing composition (molar ratio): 35Fe-35Pt-25C-5SiO 2 , and the total weight was 2500 g in terms of the above-mentioned weighing composition.

進一步秤量0.25g之B作為微量添加成分。 Further, 0.25 g of B was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容 量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1150℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Then, we put all the powder weighed together with the SUS grinding ball of the pulverizing medium. A 10 liter ball mill was mixed and pulverized in an Ar environment for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1150 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、Si、B係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。SiO2之含量係根據Si之測定值使用化學計算比率來計算。其結果,於濺鍍靶中B含量為110質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):34.95Fe-35.02Pt-24.90C-5.13SiO2Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, Si, and B were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. The content of SiO 2 was calculated from the measured value of Si using a stoichiometric ratio. As a result, the B content in the sputtering target was 110 ppm by mass. Further, regarding the basic component, the result of calculating the molar ratio based on the weight ratio obtained by the analysis, the composition of the sputtering target is the analytical composition (molar ratio): 34.95Fe-35.02Pt-24.90C-5.13SiO 2 .

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,以與實施例1相同之條件進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為108個。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, sputtering was carried out under the same conditions as in Example 1, and the number of particles attached to the substrate was measured with a particle counter. The number of particles at this time was 108.

(比較例7) (Comparative Example 7)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑10μm之B粉、平均粒徑10μm之C粉(石墨粉)、平均粒徑5μm之SiO2粉作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, B powder having an average particle diameter of 10 μm, C powder (graphite powder) having an average particle diameter of 10 μm, and SiO 2 powder having an average particle diameter of 5 μm were prepared as raw material powders.

將基本成分設為秤量組成(莫耳比率):35Fe-35Pt-25C-5SiO2,以上述秤量組成比秤量成合計重量為2500g。 The basic component was set to a weighing composition (molar ratio): 35Fe-35Pt-25C-5SiO 2 , and the total weight was 2500 g in terms of the above-mentioned weighing composition.

進一步秤量0.07g之B作為微量添加成分 Further weigh 0.07g of B as a trace additive

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1150℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1150 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、Si、B係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。SiO2之含量係根據Si之測定值使用化學計算比率來計算。其結果,於濺鍍靶中B含量為20質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):34.77Fe-35.02Pt-25.07C-5.14SiO2Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, Si, and B were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. The content of SiO 2 was calculated from the measured value of Si using a stoichiometric ratio. As a result, the B content in the sputtering target was 20 ppm by mass. Further, regarding the basic component, the result of calculating the molar ratio based on the weight ratio obtained by the analysis, the composition of the sputtering target is the analysis composition (molar ratio): 34.77Fe-35.02Pt-25.07C-5.14SiO 2 .

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,安裝於磁控濺鍍裝置,以與實施例1相同之條件進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為245個,較實施例4增加。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, it was mounted on a magnetron sputtering apparatus, and sputtering was performed under the same conditions as in Example 1, and the number of particles attached to the substrate was measured by a particle counter. The number of particles at this time was 245, which was larger than that of Example 4.

(比較例8) (Comparative Example 8)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑10μm之B粉、平均粒徑10μm之C粉(石墨粉)、平均粒徑5μm之SiO2粉作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, B powder having an average particle diameter of 10 μm, C powder (graphite powder) having an average particle diameter of 10 μm, and SiO 2 powder having an average particle diameter of 5 μm were prepared as raw material powders.

將基本成分設為秤量組成(莫耳比率):35Fe-35Pt-25C-5SiO2,以上述秤量組成比秤量成合計重量為2500g。 The basic component was set to a weighing composition (molar ratio): 35Fe-35Pt-25C-5SiO 2 , and the total weight was 2500 g in terms of the above-mentioned weighing composition.

進一步秤量17.5g之B作為微量添加成分。 Further, 17.5 g of B was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1150℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1150 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、Si、B係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。SiO2之含量係根據Si之測定值使用化學計算比率來計算。其結果,於濺鍍靶中B含量為6950質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):35.03Fe-34.87Pt-25.05C-5.05SiO2Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, Si, and B were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. The content of SiO 2 was calculated from the measured value of Si using a stoichiometric ratio. As a result, the B content in the sputtering target was 6950 ppm by mass. Further, regarding the basic component, the result of calculating the molar ratio based on the weight ratio obtained by the analysis, the composition of the sputtering target is the analytical composition (molar ratio): 35.03Fe-34.87Pt-25.05C-5.05SiO 2 .

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,以與實施例1相同之條件進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為117個,與實施例4同程度。另一方面,若與實施例4相比,無法得到充分的磁特性。認為此係由於B的含量多,故飽和磁化或結晶磁異向性能量降低。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, sputtering was carried out under the same conditions as in Example 1, and the number of particles attached to the substrate was measured with a particle counter. The number of particles at this time was 117, which was the same as in Example 4. On the other hand, when compared with Example 4, sufficient magnetic characteristics could not be obtained. It is considered that since the content of B is large, the saturation magnetization or the crystal magnetic anisotropy energy is lowered.

(實施例5) (Example 5)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑3μm之Cu粉、平均粒徑3μm之W粉、平均粒徑10μm之C粉(石墨粉)、平均粒徑1μm之TaC粉作為原料粉。將基本成分設為秤量組成(莫耳比率):30Fe-30Pt-5Cu-20C-15TaC,以上述秤量組成比秤量成合計重量為3000g。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, Cu powder having an average particle diameter of 3 μm, W powder having an average particle diameter of 3 μm, C powder (graphite powder) having an average particle diameter of 10 μm, and an average particle diameter of 1 μm were prepared. TaC powder is used as a raw material powder. The basic composition was set to a weighing composition (molar ratio): 30Fe-30Pt-5Cu-20C-15TaC, and the total weight was 3000 g in terms of the above-mentioned weighing composition.

進一步秤量12.0g之W作為微量添加成分。 Further, 12.0 g of W was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為氮環境、升溫速度300℃/小時、保持溫度1100℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a nitrogen atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1100 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、Cu、Ta、W係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。TaC之含量係根據Ta之測定值使用化學計算比率來計算。其結果,於濺鍍靶中W含量為4000質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):29.92Fe-30.09Pt-5.04Cu-19.92C-15.03TaC。 Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, Cu, Ta, and W were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. The content of TaC is calculated from the measured value of Ta using a stoichiometric ratio. As a result, the W content in the sputtering target was 4000 ppm by mass. Further, regarding the basic component, the result of calculating the molar ratio based on the weight ratio obtained by the analysis, the composition of the sputtering target is the analytical composition (molar ratio): 29.92Fe-30.09Pt-5.04Cu-19.92C- 15.03TaC.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,以與實施例1相同之條件進 行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為278個。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, the same conditions as in Example 1 were carried out. The sputtering is performed, and the number of particles attached to the substrate is measured by a particle counter. The number of particles at this time was 278.

(比較例9) (Comparative Example 9)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑3μm之Cu粉、平均粒徑3μm之W粉、平均粒徑10μm之C粉(石墨粉)、平均粒徑1μm之TaC粉作為原料粉。將基本成分設為秤量組成(莫耳比率):30Fe-30Pt-5Cu-20C-15TaC,以上述秤量組成比秤量成合計重量為3000g。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, Cu powder having an average particle diameter of 3 μm, W powder having an average particle diameter of 3 μm, C powder (graphite powder) having an average particle diameter of 10 μm, and an average particle diameter of 1 μm were prepared. TaC powder is used as a raw material powder. The basic composition was set to a weighing composition (molar ratio): 30Fe-30Pt-5Cu-20C-15TaC, and the total weight was 3000 g in terms of the above-mentioned weighing composition.

進一步秤量0.1g之W作為微量添加成分。 Further, 0.1 g of W was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為氮環境、升溫速度300℃/小時、保持溫度1100℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a nitrogen atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1100 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、Cu、Ta、W係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。TaC之含量係根據Ta之測定值使用化學計算比率來計算。其結果,於濺鍍靶中W含量為30質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):29.92Fe-30.38Pt-5.18Cu-19.72C-14.80TaC。 Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, Cu, Ta, and W were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. The content of TaC is calculated from the measured value of Ta using a stoichiometric ratio. As a result, the W content in the sputtering target was 30 ppm by mass. Further, regarding the basic component, the result of calculating the molar ratio based on the weight ratio obtained by the analysis, the composition of the sputtering target is the analytical composition (mole ratio): 29.92Fe-30.38Pt-5.18Cu-19.72C- 14.80TaC.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,以與實施例1相同之條件進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為590個,較實施例5增加。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, sputtering was carried out under the same conditions as in Example 1, and the number of particles attached to the substrate was measured with a particle counter. The number of particles at this time was 590, which was larger than that of Example 5.

(比較例10) (Comparative Example 10)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑3μm之Cu粉、平均粒徑3μm之W粉、平均粒徑10μm之C粉(石墨粉)、平均粒徑1μm之TaC粉作為原料粉。將基本成分設為秤量組成(莫耳比率):30Fe-30Pt-5Cu-20C-15TaC,以上述秤量組成比秤量成合計重量為3000g。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, Cu powder having an average particle diameter of 3 μm, W powder having an average particle diameter of 3 μm, C powder (graphite powder) having an average particle diameter of 10 μm, and an average particle diameter of 1 μm were prepared. TaC powder is used as a raw material powder. The basic composition was set to a weighing composition (molar ratio): 30Fe-30Pt-5Cu-20C-15TaC, and the total weight was 3000 g in terms of the above-mentioned weighing composition.

進一步秤量24.0g之W作為微量添加成分。 Further, 24.0 g of W was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為氮環境、升溫速度300℃/小時、保持溫度1100℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a nitrogen atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1100 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、Cu、Ta、W係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。TaC之含量係根據Ta之測定值使用化學計算比率來計算。其結果,於濺鍍靶中W含量為7980質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算 莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):30.03Fe-30.00Pt-5.06Cu-19.98C-14.93TaC。 Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, Cu, Ta, and W were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. The content of TaC is calculated from the measured value of Ta using a stoichiometric ratio. As a result, the W content in the sputtering target was 7980 ppm by mass. Also, regarding the basic component, it is calculated based on the weight ratio obtained by analysis. As a result of the molar ratio, the composition of this sputtering target was the analytical composition (mole ratio): 30.03Fe-30.00Pt-5.06Cu-19.98C-14.93 TaC.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,以與實施例1相同之條件進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為290個,與實施例5幾乎同程度。另一方面,若與實施例5相比,無法得到充分的磁特性。認為此係由於W的含量多,故飽和磁化或結晶磁異向性能量降低。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, sputtering was carried out under the same conditions as in Example 1, and the number of particles attached to the substrate was measured with a particle counter. The number of particles at this time was 290, which was almost the same as in Example 5. On the other hand, when compared with Example 5, sufficient magnetic characteristics could not be obtained. It is considered that since the content of W is large, the saturation magnetization or the crystal magnetic anisotropy energy is lowered.

(實施例6) (Example 6)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑3μm之W粉、平均粒徑10μm之C粉(石墨粉)作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, W powder having an average particle diameter of 3 μm, and C powder (graphite powder) having an average particle diameter of 10 μm were prepared as raw material powders.

將基本成分設為秤量組成(莫耳比率):45.5Fe-24.5Pt-30C,以上述秤量組成比秤量成合計重量為2470g。 The basic composition was set to a weighing composition (molar ratio): 45.5Fe-24.5Pt-30C, and the total weight was 2470 g in terms of the above-mentioned weighing composition.

進一步秤量5.0g之W作為微量添加成分。 Further, 5.0 g of W was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1300℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1300 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、W係使用ICP-AES裝置進行測定,C係利用採用高頻感應加 熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。其結果,於濺鍍靶中W含量為2010質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):45.53Fe-24.50Pt-29.97C。 Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, and W are measured using an ICP-AES device, and C is using a high frequency induction. The carbon analyzer of the hot-burning-infrared absorption method was measured. As a result, the W content in the sputtering target was 2010 mass ppm. Further, as a result of calculating the molar ratio based on the weight ratio obtained by the analysis on the basic component, the composition of the sputtering target was an analysis composition (molar ratio): 45.53Fe-24.50Pt-29.97C.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。將此靶安裝於磁控濺鍍裝置(佳能安內華製C-3010濺鍍系統)進行濺鍍。使濺鍍條件為輸入電功率1kW、Ar氣壓1.7Pa,實施2kWhr的預濺鍍後,在4吋直徑的矽基板上成膜20秒。然後以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為124個。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. This target was mounted on a magnetron sputtering device (C-3010 sputtering system manufactured by Canon Annehua) for sputtering. The sputtering conditions were 1 kW of input electric power and 1.7 Pa of Ar gas pressure, and after pre-sputtering of 2 kWhr, film formation was performed on a 4 吋 diameter ruthenium substrate for 20 seconds. The number of particles attached to the substrate is then measured with a particle counter. The number of particles at this time was 124.

(比較例11) (Comparative Example 11)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑3μm之W粉、平均粒徑10μm之C粉(石墨粉)作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, W powder having an average particle diameter of 3 μm, and C powder (graphite powder) having an average particle diameter of 10 μm were prepared as raw material powders.

將基本成分設為秤量組成(莫耳比率):45.5Fe-24.5Pt-30C,以上述秤量組成比秤量成合計重量為2470g。 The basic composition was set to a weighing composition (molar ratio): 45.5Fe-24.5Pt-30C, and the total weight was 2470 g in terms of the above-mentioned weighing composition.

進一步秤量0.25g之W作為微量添加成分。 Further, 0.25 g of W was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1300℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1300 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分 析。Fe、Pt、W係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。其結果,於濺鍍靶中W含量為80質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):45.40Fe-24.52Pt-30.08C。 Then, using a sintered body produced from the obtained body, a part is obtained, and the component is implemented. Analysis. Fe, Pt, and W were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. As a result, the W content in the sputtering target was 80 ppm by mass. Further, as a result of calculating the molar ratio based on the weight ratio obtained by analysis regarding the basic component, the composition of the sputtering target was an analytical composition (molar ratio): 45.40Fe-24.52 Pt-30.08C.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,以與實施例1相同之條件進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為354個,較實施例6增加。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, sputtering was carried out under the same conditions as in Example 1, and the number of particles attached to the substrate was measured with a particle counter. The number of particles at this time was 354, which was larger than that of Example 6.

(比較例12) (Comparative Example 12)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑3μm之W粉、平均粒徑10μm之C粉(石墨粉)作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, W powder having an average particle diameter of 3 μm, and C powder (graphite powder) having an average particle diameter of 10 μm were prepared as raw material powders.

將基本成分設為秤量組成(莫耳比率):45.5Fe-24.5Pt-30C,以上述秤量組成比秤量成合計重量為2470g。 The basic composition was set to a weighing composition (molar ratio): 45.5Fe-24.5Pt-30C, and the total weight was 2470 g in terms of the above-mentioned weighing composition.

進一步秤量50.0g之W作為微量添加成分。 Further, 50.0 g of W was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1300℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1300 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. After the end of the stay, it is naturally cooled directly in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分 析。Fe、Pt、W係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。其結果,於濺鍍靶中W含量為20100質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):45.47Fe-24.58Pt-29.95C。 Then, using a sintered body produced from the obtained body, a part is obtained, and the component is implemented. Analysis. Fe, Pt, and W were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. As a result, the W content in the sputtering target was 20100 ppm by mass. Further, as a result of calculating the molar ratio based on the weight ratio obtained by the analysis on the basic component, the composition of the sputtering target was an analytical composition (molar ratio): 45.47Fe-24.58 Pt-29.95C.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,以與實施例1相同之條件進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為163個,較實施例6增加。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, sputtering was carried out under the same conditions as in Example 1, and the number of particles attached to the substrate was measured with a particle counter. The number of particles at this time was 163, which was larger than that of Example 6.

另一方面,若與實施例6相比,無法得到充分的磁特性。認為此係由於W含量過多,故飽和磁化或結晶磁異向性能量降低。 On the other hand, sufficient magnetic properties could not be obtained as compared with Example 6. It is considered that this is because the W content is too large, so the saturation magnetization or the crystal magnetic anisotropy energy is lowered.

(實施例7) (Example 7)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑10μm之C粉(石墨粉)、平均粒徑3μm之Cr粉作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, C powder (graphite powder) having an average particle diameter of 10 μm, and Cr powder having an average particle diameter of 3 μm were prepared as raw material powders.

將基本成分設為秤量組成(莫耳比率):20.25Fe-24.75Pt-55C,以上述秤量組成比秤量成合計重量為2200g。 The basic component was set to a weighing composition (molar ratio): 20.25Fe-24.75 Pt-55C, and the total weight of the above-mentioned weighing amount was 2200 g.

進一步秤量2.2g之Cr作為微量添加成分。 Further, 2.2 g of Cr was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1400℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接 在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1400 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. Directly after the end Cool naturally in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、Cr係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。其結果,於濺鍍靶中Cr含量為990質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):20.35Fe-24.78Pt-54.87C。 Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, and Cr were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. As a result, the Cr content in the sputtering target was 990 ppm by mass. Further, as a result of calculating the molar ratio based on the weight ratio obtained by the analysis on the basic component, the composition of the sputtering target was an analytical composition (molar ratio): 20.35Fe-24.78Pt-54.87C.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,以與實施例1相同之條件進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為356個。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, sputtering was carried out under the same conditions as in Example 1, and the number of particles attached to the substrate was measured with a particle counter. The number of particles at this time was 356.

(比較例13) (Comparative Example 13)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑10μm之C粉(石墨粉)、平均粒徑3μm之Cr粉作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, C powder (graphite powder) having an average particle diameter of 10 μm, and Cr powder having an average particle diameter of 3 μm were prepared as raw material powders.

將基本成分設為秤量組成(莫耳比率):20.25Fe-24.75Pt-55C,以上述秤量組成比秤量成合計重量為2200g。 The basic component was set to a weighing composition (molar ratio): 20.25Fe-24.75 Pt-55C, and the total weight of the above-mentioned weighing amount was 2200 g.

進一步秤量0.1g之Cr作為微量添加成分。 Further, 0.1 g of Cr was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1400℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接 在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1400 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. Directly after the end Cool naturally in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、Cr係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。其結果,於濺鍍靶中Cr含量為30質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):20.23Fe-24.80Pt-54.97C。 Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, and Cr were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. As a result, the Cr content in the sputtering target was 30 ppm by mass. Further, as a result of calculating the molar ratio based on the weight ratio obtained by the analysis on the basic component, the composition of the sputtering target was an analytical composition (molar ratio): 20.23Fe-24.80Pt-54.97C.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,安裝於磁控濺鍍裝置,以與實施例1相同之條件進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為486個,較實施例7增加。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, it was mounted on a magnetron sputtering apparatus, and sputtering was performed under the same conditions as in Example 1, and the number of particles attached to the substrate was measured by a particle counter. The number of particles at this time was 486, which was larger than that of Example 7.

(比較例14) (Comparative Example 14)

準備平均粒徑3μm之Fe粉、平均粒徑3μm之Pt粉、平均粒徑10μm之C粉(石墨粉)、平均粒徑3μm之Cr粉作為原料粉。 Fe powder having an average particle diameter of 3 μm, Pt powder having an average particle diameter of 3 μm, C powder (graphite powder) having an average particle diameter of 10 μm, and Cr powder having an average particle diameter of 3 μm were prepared as raw material powders.

將基本成分設為秤量組成(莫耳比率):20.25Fe-24.75Pt-55C,以上述秤量組成比秤量成合計重量為2200g。 The basic component was set to a weighing composition (molar ratio): 20.25Fe-24.75 Pt-55C, and the total weight of the above-mentioned weighing amount was 2200 g.

進一步秤量20g之Cr作為微量添加成分。 Further, 20 g of Cr was weighed as a trace addition component.

接著將秤量之全部粉末與粉碎媒體之SUS磨球一起放入容量10公升的球磨鍋,於Ar環境中,旋轉16小時進行混合、粉碎。然後,將自鍋中取出之粉末填充於碳製模具,使用熱壓裝置進行成型、燒結。使熱壓的條件為真空環境、升溫速度300℃/小時、保持溫度1400℃、保持時間2小時,自升溫開始時至保持結束以30MPa進行加壓。保持結束後直接 在腔室內自然冷卻。 Next, the entire amount of the powder was placed in a ball mill having a capacity of 10 liters together with a SUS grinding ball of a pulverizing medium, and the mixture was rotated and pulverized in an Ar atmosphere for 16 hours. Then, the powder taken out from the pot was filled in a carbon mold, and it was molded and sintered using a hot press apparatus. The conditions of the hot pressing were a vacuum atmosphere, a temperature increase rate of 300 ° C / hour, a holding temperature of 1400 ° C, and a holding time of 2 hours, and the pressure was applied at 30 MPa from the start of the temperature rise to the end of the holding. Directly after the end Cool naturally in the chamber.

接著使用自所製作之燒結體採集而得一部份,實施組成分析。Fe、Pt、Cr係使用ICP-AES裝置進行測定,C係利用採用高頻感應加熱爐燃燒-紅外線吸收法之碳分析裝置進行測定。其結果,於濺鍍靶中Cr含量為10600質量ppm。又,關於基本成分,根據藉由分析而得之重量比率來計算莫耳比率之結果,此濺鍍靶之組成為分析組成(莫耳比率):20.24Fe-24.78Pt-54.98C。 Then, a part of the sintered body produced was used to carry out a composition analysis. Fe, Pt, and Cr were measured using an ICP-AES apparatus, and C was measured by a carbon analyzer using a high-frequency induction heating furnace-infrared absorption method. As a result, the Cr content in the sputtering target was 10,600 ppm by mass. Further, as a result of calculating the molar ratio based on the weight ratio obtained by the analysis on the basic component, the composition of the sputtering target was an analytical composition (molar ratio): 20.24Fe-24.78Pt-54.98C.

進一步使用車床,將燒結體切削加工成直徑180.0mm、厚度5.0mm之形狀,而得到圓盤狀之靶。使用此靶,以與實施例1相同之條件進行濺鍍,以顆粒計數器測量附著於基板上的顆粒個數。此時的顆粒個數為345個。與實施例7幾乎同程度。另一方面,若與實施例7相比,無法得到充分的磁特性。認為此係由於Cr的含量多,故飽和磁化或結晶磁異向性能量降低。 Further, using a lathe, the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm to obtain a disk-shaped target. Using this target, sputtering was carried out under the same conditions as in Example 1, and the number of particles attached to the substrate was measured with a particle counter. The number of particles at this time was 345. Almost the same as Example 7. On the other hand, when compared with Example 7, sufficient magnetic characteristics could not be obtained. It is considered that since the content of Cr is large, the saturation magnetization or the crystal magnetic anisotropy energy is lowered.

如以上所述,於任一實施例中,藉由添加既定量之W或Cr,而可降低濺鍍時產生之顆粒量,可提升成膜時之產率。因此,可知含有W或Cr,對於抑制顆粒之產生具有非常重要的作用。 As described above, in any of the embodiments, by adding a predetermined amount of W or Cr, the amount of particles generated at the time of sputtering can be reduced, and the yield at the time of film formation can be improved. Therefore, it is understood that the inclusion of W or Cr has a very important effect on suppressing the generation of particles.

將以上之實施例及比較例之結果之統整示於表1。 The results of the above examples and comparative examples are shown in Table 1.

[表1] [Table 1]

於上述實施例及比較例中,作為除了上述C(碳)以外還添加氧化物、氮化物、碳化物中之任一種以上作為非磁性材料的例子,雖列示BN、SiO2、TaC之例子,但確認其他之氧化物、氮化物、碳化物亦顯示相同的效果。 In the above-described examples and comparative examples, examples of BN, SiO 2 , and TaC are listed as examples of the addition of an oxide, a nitride, or a carbide to the non-magnetic material in addition to the above-mentioned C (carbon). However, it is confirmed that other oxides, nitrides, and carbides also exhibit the same effect.

進一步,含有選自Ag、Au、Co、Cu、Ga、Ge、Ir、Ni、Pd、Re、Rh、Ru、Sn、Zn中之一種以上之元素來作為金屬成分的例子,雖列示添加Cu之例子,但與此相同地,確認到只要為選自Ag、Au、Co、Cu、Ga、Ge、Ir、Ni、Pd、Re、Rh、Ru、Sn、Zn中之一種以上之元素則可得到相同的效果。 Further, an element containing one or more elements selected from the group consisting of Ag, Au, Co, Cu, Ga, Ge, Ir, Ni, Pd, Re, Rh, Ru, Sn, and Zn is used as a metal component, and Cu is added. In the same manner, it is confirmed that an element selected from one or more selected from the group consisting of Ag, Au, Co, Cu, Ga, Ge, Ir, Ni, Pd, Re, Rh, Ru, Sn, and Zn can be used. Get the same effect.

產業利用性Industrial utilization

本發明之濺鍍靶,具有下述優異之效果:可減低濺鍍時產生之顆粒量,可提升成膜時之產率。因此,適用作為用以形成粒狀結構型磁性薄膜之濺鍍靶。 The sputtering target of the present invention has an excellent effect of reducing the amount of particles generated during sputtering and improving the yield at the time of film formation. Therefore, it is suitable as a sputtering target for forming a granular structure type magnetic thin film.

Claims (8)

一種燒結體濺鍍靶,以Fe-Pt合金與非磁性材料為主成分,其特徵在於:至少含有C(碳)作為非磁性材料,於該主成分以外進一步以50質量ppm~5000質量ppm之範圍含有微量添加元素,該微量添加元素之碳化物之每1mol之碳的標準生成自由能△G°為-5000[cal/mol]以下。 A sintered body sputtering target comprising a Fe-Pt alloy and a non-magnetic material as a main component, characterized in that at least C (carbon) is contained as a non-magnetic material, and further 50 mass ppm to 5000 mass ppm is further contained outside the main component The range contains a trace amount of the additive element, and the standard production free energy ΔG° per 1 mol of the carbon of the trace addition element is -5000 [cal/mol] or less. 如申請專利範圍第1項之燒結體濺鍍靶,其中,該微量添加元素係W、Cr之任一種以上。 The sintered body sputtering target according to the first aspect of the invention, wherein the trace addition element is one or more of W and Cr. 如申請專利範圍第1或2項之燒結體濺鍍靶,其中,作為非磁性材料,除了該C(碳)以外,還含有氧化物、氮化物、碳化物中之任一種以上。 The sintered body sputtering target according to claim 1 or 2, wherein the non-magnetic material contains at least one of an oxide, a nitride, and a carbide in addition to the C (carbon). 如申請專利範圍第1至3項中任一項之燒結體濺鍍靶,其中,除了該主成分及微量添加元素以外,還含有選自Ag、Au、Co、Cu、Ga、Ge、Ir、Ni、Pd、Re、Rh、Ru、Sn、Zn中之一種以上之元素來作為金屬成分。 The sintered body sputtering target according to any one of claims 1 to 3, which further comprises, in addition to the main component and the trace addition element, an element selected from the group consisting of Ag, Au, Co, Cu, Ga, Ge, Ir, One or more elements of Ni, Pd, Re, Rh, Ru, Sn, and Zn are used as the metal component. 一種燒結體濺鍍靶之製造方法,該燒結體濺鍍靶以Fe-Pt合金與非磁性材料為主成分,其特徵在於:準備在形成Fe粉、Pt粉、C粉(石墨粉)及碳化物之情形時每1mol之碳的標準生成自由能△G°為-5000[cal/mol]以下之微量添加元素粉作為原料粉,於Ar環境中將此等粉末混合、粉碎,將混合、粉碎後之粉末填充於碳製模具中,使用熱壓裝置,於真空環境將升溫速度設為200~600℃/小時、保持溫度800~1400℃、保持時間0~4小時,自升溫開始至保持結束以20~50MPa進行加壓從而製造燒結體。 A method for producing a sintered body sputtering target, which comprises Fe-Pt alloy and a non-magnetic material as main components, and is characterized in that Fe powder, Pt powder, C powder (graphite powder) and carbonization are prepared. In the case of a substance, a standard amount of elemental powder having a free energy ΔG° of -5000 [cal/mol] or less is used as a raw material powder, and these powders are mixed and pulverized in an Ar environment, and mixed and pulverized. The powder after the filling is filled in a carbon mold, and the heating rate is set to 200 to 600 ° C / hour in a vacuum environment, the temperature is maintained at 800 to 1400 ° C, and the holding time is 0 to 4 hours. The sintered body was produced by pressurizing at 20 to 50 MPa. 如申請專利範圍第5項之燒結體濺鍍靶之製造方法,其中,該微量添加元素係W、Cr之任一種以上。 The method for producing a sintered body sputtering target according to the fifth aspect of the invention, wherein the trace addition element is one or more of W and Cr. 如申請專利範圍第5或6項之燒結體濺鍍靶之製造方法,其中,作為 非磁性材料之原料粉,除了該C(碳)以外,還含有氧化物、氮化物、碳化物中之任一種以上而進行燒結。 A method of manufacturing a sintered body sputtering target according to claim 5 or 6, wherein The raw material powder of the non-magnetic material contains, in addition to the C (carbon), any one or more of an oxide, a nitride, and a carbide, and is sintered. 如申請專利範圍第5至7項中任一項之燒結體濺鍍靶之製造方法,其進一步含有選自Ag、Au、Co、Cu、Ga、Ge、Ir、Ni、Pd、Re、Rh、Ru、Sn、Zn中之一種以上之元素來作為金屬成分之原料,而進行燒結。 The method for producing a sintered body sputtering target according to any one of claims 5 to 7, which further comprises a material selected from the group consisting of Ag, Au, Co, Cu, Ga, Ge, Ir, Ni, Pd, Re, Rh, One or more elements of Ru, Sn, and Zn are used as a raw material of the metal component to be sintered.
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TWI633198B (en) * 2016-09-02 2018-08-21 日商Jx金屬股份有限公司 Non-magnetic material dispersed Fe-Pt sputtering target
TWI801731B (en) * 2019-06-28 2023-05-11 日商田中貴金屬工業股份有限公司 Fe-Pt-BN system sputtering target and manufacturing method thereof

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CN103270554B (en) * 2010-12-20 2016-09-28 吉坤日矿日石金属株式会社 It is dispersed with the Fe-Pt type sputtering target of C particle
US9683284B2 (en) * 2011-03-30 2017-06-20 Jx Nippon Mining & Metals Corporation Sputtering target for magnetic recording film
JP6108064B2 (en) * 2012-08-24 2017-04-05 三菱マテリアル株式会社 Sputtering target for forming a magnetic recording medium film and method for producing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI633198B (en) * 2016-09-02 2018-08-21 日商Jx金屬股份有限公司 Non-magnetic material dispersed Fe-Pt sputtering target
TWI801731B (en) * 2019-06-28 2023-05-11 日商田中貴金屬工業股份有限公司 Fe-Pt-BN system sputtering target and manufacturing method thereof

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