TW201510232A - Sintered body, and sputtering target for magnetic recording film formation use which comprises said sintered body - Google Patents

Sintered body, and sputtering target for magnetic recording film formation use which comprises said sintered body Download PDF

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TW201510232A
TW201510232A TW103114808A TW103114808A TW201510232A TW 201510232 A TW201510232 A TW 201510232A TW 103114808 A TW103114808 A TW 103114808A TW 103114808 A TW103114808 A TW 103114808A TW 201510232 A TW201510232 A TW 201510232A
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sintered body
oxide
mol
boron
body according
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TW103114808A
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TWI615479B (en
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Hideo Takami
Yuichiro Nakamura
Yuki Ikeda
Shin-Ichi Ogino
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Jx Nippon Mining & Metals Corp
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C19/00Alloys based on nickel or cobalt
    • C22C19/07Alloys based on nickel or cobalt based on cobalt
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/04Alloys based on a platinum group metal

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)
  • Thin Magnetic Films (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Magnetic Record Carriers (AREA)
  • Hard Magnetic Materials (AREA)

Abstract

A sintered body which contains at least cobalt as a metal and is composed of boron and/or at least one metal selected from platinum group elements or an alloy of the metal and an oxide, said sintered body being characterized in that at least one compound selected from Cr(BO3), Co2B2O5 and Co3B2O6 is contained in a phase composed of the oxide. A sintered body in which a compound selected from Cr(BO3), Co2B2O5 and Co3B2O6 is present in a target can maintain a fine structure, and enables the provision of a sintered body for magnetic recording film formation use which comprises a sintered body that is stable in water.

Description

燒結體、由該燒結體構成之磁記錄膜形成用濺鍍靶 Sintered body, sputtering target for forming a magnetic recording film composed of the sintered body

本發明係關於一種燒結體,且係關於一種可用於形成磁記錄膜的燒結體、由該燒結體構成之濺鍍靶,該磁記錄膜係於磁記錄媒體之磁性體薄膜(特別是採用垂直磁記錄方式之硬碟的磁記錄層)之成膜時所使用者。 The present invention relates to a sintered body, and relates to a sintered body which can be used for forming a magnetic recording film, and a sputtering target composed of the sintered body, the magnetic recording film being attached to a magnetic film of a magnetic recording medium (especially using a vertical The user of the magnetic recording layer of the magnetic recording type hard disk is formed by film formation.

以前,於使用由含有氧化硼之燒結體製得之靶來進行濺鍍之情形時,由於在燒結時或燒結後氧化硼粒子變得粗大,因此有濺鍍時顆粒之產生經常發生的問題。 In the case where sputtering is performed using a target obtained by a sintering system containing boron oxide, since boron oxide particles become coarse at the time of sintering or after sintering, there is a problem that generation of particles frequently occurs during sputtering.

本案發明係關於可解決此種問題之燒結體及由該燒結體構成之濺鍍靶。 The invention of the present invention relates to a sintered body which can solve such a problem and a sputtering target composed of the sintered body.

於硬碟驅動器所代表之磁記錄的領域中,作為用以記錄的磁性薄膜材料,一直使用以強磁性金屬Co、Fe或Ni為基質的材料。例如於採用面內磁記錄方式之硬碟的記錄層,一直使用以Co為主成分之Co-Cr系或Co-Cr-Pt系的強磁性合金。 In the field of magnetic recording represented by a hard disk drive, as a magnetic thin film material for recording, a material based on a ferromagnetic metal Co, Fe or Ni has been used. For example, in a recording layer of a hard disk using an in-plane magnetic recording method, a Co-Cr-based or Co-Cr-Pt-based ferromagnetic alloy containing Co as a main component has been used.

又,於採用近年來被實用化的垂直磁記錄方式之硬碟的記錄層,多採用由以Co作為主成分之Co-Cr-Pt系之強磁性合金與非磁性之無機物構成的複合材料。 In addition, a composite material composed of a Co-Cr-Pt-based ferromagnetic alloy containing Co as a main component and a non-magnetic inorganic material is often used for a recording layer of a hard disk using a perpendicular magnetic recording method which has been put into practical use in recent years.

而且,就生產性高之方面而言,硬碟等磁記錄媒體之磁性薄 膜大多係對以上述材料作為成分之強磁性材濺鍍靶進行濺鍍來製作。又,對於此種磁記錄膜用濺鍍靶,為了使合金相進行磁性分離而添加氧化硼。 Moreover, in terms of high productivity, the magnetic recording medium such as a hard disk is magnetic thin. Many of the films are produced by sputtering a strong magnetic material sputtering target containing the above materials as a component. Further, in such a sputtering target for a magnetic recording film, boron oxide is added in order to magnetically separate the alloy phase.

強磁性材濺鍍靶之製作方法,可想到熔解法或粉末冶金法。要採用何種方法進行製作是取決於所要求之特性,因此不可一概而論,但垂直磁記錄方式之硬碟之記錄層所使用的由強磁性合金與非磁性之無機物粒子構成的濺鍍靶,一般係藉由粉末冶金法來加以製作。其原因在於,由於必須使氧化硼等無機物粒子均勻地分散於合金基材中,因而難以利用熔解法來製作。 For the production method of a strong magnetic material sputtering target, a melting method or a powder metallurgy method is conceivable. The method to be used for fabrication depends on the required characteristics, so it cannot be generalized. However, the sputtering target composed of ferromagnetic alloy and non-magnetic inorganic particles used in the recording layer of the hard magnetic recording type hard disk is generally used. It is produced by powder metallurgy. This is because it is necessary to uniformly disperse inorganic particles such as boron oxide in the alloy base material, and thus it is difficult to produce by the melting method.

另一方面,若搜尋於磁記錄媒體添加氧化硼之公知文獻,則可舉出下述專利文獻。 On the other hand, when searching for a known document in which boron oxide is added to a magnetic recording medium, the following patent documents are mentioned.

下述專利文獻1中,記載有「一種磁性記錄媒體,其具有磁資料記錄層,該磁資料記錄層含有:第一合金,其具有至少0.5×107erg/cm3(0.5/Jcm3)之磁異向性常數;及氧化物化合物,其係由氧和至少一個元素具有負的還原電位之一個以上的元素構成」(請求項1)。 Patent Document 1 discloses a magnetic recording medium having a magnetic data recording layer containing: a first alloy having at least 0.5 × 10 7 erg/cm 3 (0.5/Jcm 3 ) a magnetic anisotropy constant; and an oxide compound composed of one or more elements having oxygen and at least one element having a negative reduction potential" (Request 1).

然後,同專利文獻1之請求項6中記載有「一種磁記錄媒體,其中,該氧化化合物中之一個以上的元素之至少一個係選自由下列組成之群組:鋰(Li)、鈹(Be)、硼(B)、鈉(Na)、鎂(Mg)、鋁(Al)、矽(Si)、鉀(K)、鈣(Ca)、鈧(Sc)、鈦(Ti)、釩(V)、鉻(Cr)、錳(Mn)、鐵(Fe)、鈷(Co)、鎳(Ni)、鋅(Zn)、鎵(Ga)、銣(Rb)、鍶(Sr)、釔(Y)、鋯(Zr)、鈮(Nb)、鎘(Cd)、銦(In)、銫(Cs)、鋇(Ba)、鑭(La)、鈰(Ce)、鐠(Pr)、釹(Nd)、釤(Sm)、銪(Eu)、鋱(Tb)、釓(Gd)、鈥(Ho)、鉺(Er)、銩(Tm)、鐿(Yb)、鎦(Lu)、鉿(Hf)、鉭(Ta)、鎢(W)、鉛(Pb)、釷(Th)及鈾(U)」,且其等材料為濺鍍靶。 The magnetic recording medium of claim 1, wherein at least one of the one or more elements of the oxidized compound is selected from the group consisting of lithium (Li), bismuth (Be). ), boron (B), sodium (Na), magnesium (Mg), aluminum (Al), strontium (Si), potassium (K), calcium (Ca), strontium (Sc), titanium (Ti), vanadium (V) ), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), zinc (Zn), gallium (Ga), antimony (Rb), antimony (Sr), antimony (Y) ), zirconium (Zr), niobium (Nb), cadmium (Cd), indium (In), antimony (Cs), barium (Ba), lanthanum (La), cerium (Ce), cerium (Pr), cerium (Nd) ), 钐 (Sm), 铕 (Eu), 鋱 (Tb), 釓 (Gd), 鈥 (Ho), 铒 (Er), 銩 (Tm), 镱 (Yb), 镏 (Lu), 铪 (Hf ), tantalum (Ta), tungsten (W), lead (Pb), tantalum (Th), and uranium (U), and their materials are sputtering targets.

上述所記載之大量的氧化物中雖亦有氧化硼之記載,但完全未記載靶中存在氧化硼之問題點及此問題之解決方法。 Although a large amount of oxides described above are also described as boron oxide, the problem of the presence of boron oxide in the target and the solution to this problem are not described at all.

下述專利文獻2之請求項1記載有「一種靶,其係為了以濺鍍法來形成磁記錄媒體之Co系磁性層所使用者,其特徵在於:該靶含有5莫耳%以上之Cr或Cr合金,含有5莫耳%以上之CoO,含有熔點為800℃以下之氧化物合計在3莫耳%~20莫耳%之範圍內,氣孔率在7%以下」,同引證之請求項4記載有「如申請專利範圍第1至3項中任一項之靶,其中,熔點為800℃以下之氧化物為選自氧化硼、氧化釩、氧化碲、氧化鉬、低熔點玻璃中之至少一種」。 The claim 1 of the following Patent Document 2 describes "a target for a user who forms a Co-based magnetic layer of a magnetic recording medium by a sputtering method, and the target contains 5 mol% or more of Cr. Or a Cr alloy containing 5 mol% or more of CoO, and an oxide having a melting point of 800 ° C or less in a total range of 3 mol % to 20 mol %, and a porosity of 7% or less", the same as the cited claim The target of any one of claims 1 to 3, wherein the oxide having a melting point of 800 ° C or less is selected from the group consisting of boron oxide, vanadium oxide, cerium oxide, molybdenum oxide, and low melting point glass. At least one kind."

於此情形亦與上述專利文獻1相同,完全未記載燒結體或由燒結體構成之靶中存在氧化硼之問題點及此問題之解決方法。 In this case as well as the above-mentioned Patent Document 1, the problem of the presence of boron oxide in the sintered body or the target made of the sintered body and the solution to this problem are not described at all.

於下述專利文獻3中記載有「一種濺鍍靶,其係由Cr在20mol%以下,剩餘為Co之強磁性合金與非金屬無機材料構成之燒結體濺鍍靶,其特徵在於:上述非金屬無機材料所佔之體積率在40vol%以下,且上述非金屬無機材料至少含有鈷氧化物及硼氧化物。一種濺鍍靶用燒結體之製造方法,其係將對金屬粉末與至少含有鈷氧化物及硼氧化物之非金屬無機材料粉末粉碎、混合而得之混合粉末,於保持溫度800℃以下藉由加壓燒結裝置來成型、燒結」(摘要)。 Patent Document 3 discloses "a sputtering target which is a sintered sputtering target in which a Cr is contained in an amount of 20 mol% or less and a Co magnetic alloy and a non-metallic inorganic material remain as a non-metallic inorganic material. The metal inorganic material occupies a volume fraction of 40 vol% or less, and the non-metal inorganic material contains at least cobalt oxide and boro oxide. A method for producing a sintered body for a sputtering target, which is a metal powder and at least cobalt A mixed powder obtained by pulverizing and mixing a non-metallic inorganic material powder of an oxide and a boron oxide is molded and sintered by a pressure sintering device at a temperature of 800 ° C or lower (Abstract).

於此情形亦與上述專利文獻1、2相同,雖記載有使其含有「硼氧化物」,但完全未記載靶中存在氧化硼之問題點及此問題之解決方法。 In this case, similarly to the above-mentioned Patent Documents 1 and 2, although it is described that "boron oxide" is contained, the problem of the presence of boron oxide in the target and the solution to this problem are not described at all.

下述專利文獻4中記載有「一種磁記錄膜用濺鍍靶,其含有SiO2,其特徵在於:含有10~1000wtppm之B(硼)」。此情形亦為含有氧化硼,但與上述專利文獻1、2、3相同,完全未記載燒結體或由燒結體構成之靶中存在氧化硼之問題點及此問題之解決方法。 In the following Patent Document 4, "a sputtering target for a magnetic recording film containing SiO 2 and containing B (boron) in an amount of 10 to 1000 wtppm" is described. In this case, boron oxide is contained. However, similarly to the above-mentioned Patent Documents 1, 2, and 3, the problem of the presence of boron oxide in the sintered body or the target made of the sintered body is not described at all, and a solution to this problem is provided.

[專利文獻1]日本特開2008-59733號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-59733

[專利文獻2]日本特開2012-33247號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2012-33247

[專利文獻3]日本特開2012-117147號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2012-117147

[專利文獻4]日本專利第5009448號公報 [Patent Document 4] Japanese Patent No. 5009448

對於磁記錄膜用濺鍍靶,大多使用由強磁性合金與非磁性材料構成的複合材料,且進行添加氧化硼來作為非磁性材料。然而,添加有氧化硼之靶,由於燒結後氧化硼粒子變大,因此有若降低用於抑制粒子成長之燒結溫度則密度無法上升,從而顆粒(particle)大量產生之問題。 For the sputtering target for a magnetic recording film, a composite material composed of a ferromagnetic alloy and a non-magnetic material is often used, and boron oxide is added as a non-magnetic material. However, since the target of boron oxide is added, since the boron oxide particles become large after sintering, if the sintering temperature for suppressing the growth of the particles is lowered, the density cannot be increased, and a large amount of particles are generated.

若追究此問題,則可知其理由大致分為兩種。第一:由於氧化硼原料吸溼性高而容易凝固,因此難以得到細緻之氧化硼。第二:由於氧化硼其熔點低,因此於燒結中容易被液狀化,於燒結中會成長為大粒子。 If you ask this question, you can see that the reasons are roughly divided into two types. First: Since the boron oxide raw material has high hygroscopicity and is easily solidified, it is difficult to obtain fine boron oxide. Second: Since boron oxide has a low melting point, it is easily liquefied during sintering and grows into large particles during sintering.

進一步,作為其他問題,有:於利用機械加工等將殘留有氧化硼之燒結體溼式加工時,或者於溼度高之場所保管時,與水分反應而生成硼酸,其於燒結體(靶)之表面等析出而成為色斑或污染的原因,此亦為濺鍍時顆粒產生的原因,又,於水分進到膜中而成為不良的原因。 Further, as another problem, when the sintered body in which boron oxide remains is wet-processed by machining or the like, or when stored in a place having high humidity, it reacts with moisture to form boric acid, which is formed in a sintered body (target). The surface or the like precipitates to cause stains or contamination, which is also a cause of particles generated during sputtering, and causes moisture to enter the film and causes defects.

為了確保用於形成添加有氧化硼之磁紀錄膜的燒結體(特別是濺鍍靶)的良好品質,必須解決此種問題。 In order to ensure good quality of a sintered body (particularly a sputtering target) for forming a magnetic recording film to which boron oxide is added, such a problem must be solved.

基於此種知識見解,本發明提供 Based on this knowledge insight, the present invention provides

1)一種燒結體,其係由至少含有鈷作為金屬且選自硼及/或鉑族元素中之一種以上的金屬或合金與氧化物構成,其特徵在於:於由該氧化物構成之相存在Cr(BO3)、Co2B2O5、Co3B2O6中之至少一種以上。 1) A sintered body composed of a metal or an alloy containing at least one of boron and/or a platinum group element and an oxide, and characterized in that a phase composed of the oxide exists At least one of Cr(BO 3 ), Co 2 B 2 O 5 and Co 3 B 2 O 6 .

又,本發明提供 Also, the present invention provides

2)一種燒結體,其係由至少含有鈷作為金屬且選自鉻與硼及/或鉑族元素中之一種以上的金屬或合金和氧化物構成,其特徵在於:於由該氧化物構成之相存在Cr(BO3)、Co2B2O5、Co3B2O6中之至少一種以上。 2) A sintered body comprising a metal or an alloy and an oxide containing at least one of chromium and a boron and/or a platinum group element, and characterized in that it is composed of the oxide. At least one of Cr(BO 3 ), Co 2 B 2 O 5 , and Co 3 B 2 O 6 is present in the phase.

又,本發明提供 Also, the present invention provides

3)如上述1)或2)之燒結體,其中,燒結體與水接觸或浸漬於水中時,燒結體表面不會變色。 3) The sintered body according to the above 1) or 2), wherein the surface of the sintered body does not discolor when the sintered body is in contact with water or immersed in water.

又,本發明提供 Also, the present invention provides

4)如上述2)或3)之燒結體,其中,鉻與硼之原子比為Cr/B≧1。 4) The sintered body according to 2) or 3) above, wherein the atomic ratio of chromium to boron is Cr/B≧1.

又,本發明提供 Also, the present invention provides

5)如上述1)至4)中任一項之燒結體,其中,硼與氧之原子比為B/O≦0.5。 The sintered body according to any one of the above 1 to 4, wherein the atomic ratio of boron to oxygen is B/O ≦ 0.5.

又,本發明提供 Also, the present invention provides

6)如上述1)至5)中任一項之燒結體,其中,於金屬成分之比率中,鉻含量為0~50mol%、硼及/或鉑族元素之含量為0(唯,不包括0)~40mol%,剩餘部份為鈷。 The sintered body according to any one of the above 1 to 5, wherein, in the ratio of the metal component, the chromium content is 0 to 50 mol%, and the boron and/or platinum group element content is 0 (only, excluding 0) ~ 40mol%, the remainder is cobalt.

又,本發明提供 Also, the present invention provides

7)如上述1)至6)中任一項之燒結體,其中,氧化硼之含量以B2O3換算為0.5~10mol%。 The sintered body according to any one of the above 1 to 6, wherein the content of boron oxide is 0.5 to 10 mol% in terms of B 2 O 3 .

又,本發明提供 Also, the present invention provides

8)如上述1)至7)中任一項之燒結體,其中,氧化鉻之合計含量以Cr2O3換算為0.5~10mol%。 The sintered body according to any one of the above 1 to 7, wherein the total content of the chromium oxide is 0.5 to 10 mol% in terms of Cr 2 O 3 .

又,本發明提供 Also, the present invention provides

9)如上述1)至8)中任一項之燒結體,其進一步含有以選自Al、Co、Cu、Fe、Ga、Ge、Hf、Li、Mg、Mn、Mo、Nb、Ni、Sb、Si、Sn、Ta、Te、Ti、V、W、Y、Zn或Zr中之一種以上元素作為構成成分的氧化物,總氧化物量以氧換算為2~8wt%。 The sintered body according to any one of the above 1 to 8, further comprising a member selected from the group consisting of Al, Co, Cu, Fe, Ga, Ge, Hf, Li, Mg, Mn, Mo, Nb, Ni, Sb An oxide of one or more of Si, Sn, Ta, Te, Ti, V, W, Y, Zn or Zr as a constituent component, and the total amount of oxide is 2 to 8 wt% in terms of oxygen.

又,本發明提供 Also, the present invention provides

10)如上述1)至9)中任一項之燒結體,其中,燒結體中之氧化物每 一粒子的平均面積在2μm2以下。 The sintered body according to any one of the above 1 to 9, wherein the oxide in the sintered body has an average area per particle of 2 μm 2 or less.

又,本發明提供 Also, the present invention provides

11)如上述1)至10)中任一項之燒結體,其進一步含有0.5mol%以上且10mol%以下之選自Ti、V、Mn、Zr、Nb、Mo、Ta、W中之一種元素以上。 The sintered body according to any one of the above 1 to 10, further comprising 0.5 mol% or more and 10 mol% or less of one element selected from the group consisting of Ti, V, Mn, Zr, Nb, Mo, Ta, and W the above.

又,本發明提供 Also, the present invention provides

12)如上述1)至11)中任一項之燒結體,其進一步含有選自碳、氮化物、碳化物中之一種以上。 The sintered body according to any one of the above 1 to 11, further comprising one or more selected from the group consisting of carbon, nitride, and carbide.

又,本發明提供 Also, the present invention provides

13)如上述1)至12)中任一項之燒結體,其相對密度在95%以上。 13) The sintered body according to any one of the above 1) to 12), which has a relative density of 95% or more.

又,本發明提供 Also, the present invention provides

14)一種磁記錄膜形成用濺鍍靶,係由上述1)至13)中任一項之燒結體構成。 14) A sputtering target for forming a magnetic recording film, comprising the sintered body according to any one of the above 1) to 13).

又,本發明提供 Also, the present invention provides

15)一種燒結體之製造方法,其係將至少含有鈷作為金屬且選自硼及/或鉑族元素中之一種以上的金屬或合金與Cr(BO3)、Co2B2O5、Co3B2O6中之至少一種以上氧化物混合並進行燒結。 15) A method for producing a sintered body comprising at least one or more metals or alloys selected from the group consisting of boron and/or a platinum group element, and Cr(BO 3 ), Co 2 B 2 O 5 , Co At least one or more of the 3 B 2 O 6 oxides are mixed and sintered.

又,本發明提供 Also, the present invention provides

16)一種燒結體之製造方法,其係將至少含有鈷作為金屬且選自鉻與硼及/或鉑族元素中之一種以上的金屬或合金和Cr(BO3)、Co2B2O5、Co3B2O6中之至少一種以上氧化物混合並進行燒結。 16) A method for producing a sintered body, which comprises at least one metal or alloy selected from the group consisting of chromium and boron and/or a platinum group element, and Cr(BO 3 ), Co 2 B 2 O 5 At least one or more of the oxides of Co 3 B 2 O 6 are mixed and sintered.

又,本發明提供 Also, the present invention provides

17)如上述15)或16)之燒結體之製造方法,其係準備氧化硼與氧化鉻及/或氧化鈷,於大氣中將其燒成,從而製造Cr(BO3)、Co2B2O5、Co3B2O6中之至少一種以上氧化物。 (17) The method for producing a sintered body according to the above 15) or 16), which comprises preparing boron oxide, chromium oxide and/or cobalt oxide, and firing the same in the atmosphere to produce Cr(BO 3 ), Co 2 B 2 At least one or more oxides of O 5 and Co 3 B 2 O 6 .

又,本發明提供 Also, the present invention provides

18)一種燒結體之製造方法,其係藉由上述15)至17)項中任一項之燒結體之製造方法來製造上述1)至13)項中任一項之燒結體。 (18) A sintered body of any one of the above items 1) to 13), wherein the sintered body of any one of the above items 1) to 13) is produced by the method for producing a sintered body according to any one of the above items 15) to 17).

如上所述,添加有氧化硼之燒結體於燒結後氧化硼粒子會變大,於使用作為磁記錄膜形成用濺鍍靶之情形時,會有大量產生顆粒之問題。其原因在於,由於氧化硼原料吸溼性高而容易凝固,因此難以得到細緻之氧化硼,再加上氧化硼其熔點低,因此於燒結中容易被液狀化,於燒結中會成長為大粒子。 As described above, the sintered body to which boron oxide is added has a large amount of boron oxide particles after sintering, and when a sputtering target for forming a magnetic recording film is used, there is a problem that a large amount of particles are generated. The reason for this is that since the boron oxide raw material has high hygroscopicity and is easily solidified, it is difficult to obtain fine boron oxide, and boron oxide has a low melting point, so that it is easily liquidified during sintering and grows large during sintering. particle.

有鑑於此點,本案發明之燒結體(特別是磁記錄膜用濺鍍靶)中,於由氧化物構成之相存在Cr(BO3)、Co2B2O5、Co3B2O6中之至少一種以上。 In view of the above, in the sintered body of the present invention (particularly, a sputtering target for a magnetic recording film), Cr(BO 3 ), Co 2 B 2 O 5 , and Co 3 B 2 O 6 are present in a phase composed of an oxide. At least one of the above.

此等之Cr(BO3)、Co2B2O5、Co3B2O6之化合物具有下述特性:可維持微細之組織,並提高氧化硼熔點,可抑制與水反應。藉此,可解決由燒結體中之氧化硼所引起之上述問題。 These compounds of Cr(BO 3 ), Co 2 B 2 O 5 , and Co 3 B 2 O 6 have the following characteristics: they can maintain a fine structure and increase the melting point of boron oxide, thereby suppressing reaction with water. Thereby, the above problems caused by boron oxide in the sintered body can be solved.

也就是說,變得可確保添加有氧化硼之燒結體(特別是磁記錄膜用濺鍍靶)之良好品質,可抑制濺鍍中顆粒產生。又,雖然於將殘留有氧化硼之燒結體利用機械加工等進行溼式加工時,或是於溼度高之場所保管時,與水分反應而生成硼酸,其於燒結體(靶)之表面等析出而成為色斑或污染的原因,但一樣可解決此問題。 In other words, it is possible to ensure good quality of a sintered body to which boron oxide is added (especially, a sputtering target for a magnetic recording film), and it is possible to suppress generation of particles during sputtering. In addition, when the sintered body in which boron oxide remains is subjected to wet processing by machining or the like, or when stored in a place having high humidity, it reacts with moisture to form boric acid, which is deposited on the surface of the sintered body (target). It becomes the cause of stains or pollution, but the same can be solved.

由於可如此般地抑制顆粒產生,故具有磁記錄膜之不良率減少、減低成本之重大效果,對提高磁性薄膜之品質及生產效率有極大貢獻。 Since the generation of particles can be suppressed as such, the magnetic recording film has a significant effect of reducing the defective rate and reducing the cost, and contributes greatly to the improvement of the quality and production efficiency of the magnetic film.

本案發明之燒結體(特別是磁記錄膜用濺鍍靶)係由至少含有鈷作為金屬且選自鉻及鉑族元素中之一種以上的金屬或合金與含有氧化硼及氧化鉻之氧化物構成的燒結體(特別是磁記錄膜用濺鍍靶)。除此之外(上述成分組成以外),亦可進一步添加後述之其他金屬材料或無機質材料。 The sintered body of the present invention (particularly, a sputtering target for a magnetic recording film) is composed of a metal or an alloy containing at least one or more selected from the group consisting of chromium and a platinum group, and an oxide containing boron oxide and chromium oxide. A sintered body (particularly a sputtering target for a magnetic recording film). In addition to the above (other than the above-described component composition), other metal materials or inorganic materials to be described later may be further added.

再者,上述「選自鉻與鉑族元素中之一種以上的金屬或合金」係指可為鉻金屬單質,亦可為選自鉑族元素中之一種或兩種以上之金屬,或亦可為其等之合金。 In addition, the above-mentioned "metal or alloy selected from one or more of chromium and platinum group elements" means that it may be a simple metal of chromium metal, or may be one or two or more metals selected from the group consisting of platinum group elements, or may be It is an alloy for it.

又,本案發明之燒結體主要是作為濺鍍靶使用。根據此意涵,於以下係以主要用途之濺鍍靶作為中心進行說明,但不會限定將此燒結體利用於其他被覆(coating)方法。例如,亦可利用於離子束蒸鍍法等物理、化學蒸鍍法。本案發明之燒結體包含有其等。 Further, the sintered body of the present invention is mainly used as a sputtering target. In view of the above, the sputtering target which is mainly used will be mainly described below, but the sintered body is not limited to use in other coating methods. For example, it can also be used for physical or chemical vapor deposition methods such as ion beam evaporation. The sintered body of the invention of the present invention contains the same.

本案發明係以由上述氧化物構成之相中存在Cr(BO3)、Co2B2O5、Co3B2O6中之至少一種以上為要件,此係本案發明之重大技術特徵之一。藉由以上述般化合物之型態存在氧化硼,可維持微細的組織並提高氧化硼熔點,可具有可抑制與水進行反應之特性與效果。 The invention of the present invention is characterized in that at least one of Cr(BO 3 ), Co 2 B 2 O 5 and Co 3 B 2 O 6 is present in the phase composed of the above oxide, which is one of the important technical features of the invention of the present invention. . By the presence of boron oxide in the form of the above-mentioned compound, it is possible to maintain a fine structure and increase the melting point of boron oxide, and it is possible to have characteristics and effects of suppressing reaction with water.

雖然可藉由採用於事前形成為上述化合物型態之原料,使其於燒結體中穩定,而使上述化合物殘留,但若可藉由反應燒結等來生成上述化合物則可具有同樣的效果。上述化合物之存在只要可對自燒結體採集而得之試樣進行XRD測定並界定出化合物相之波峰即可。 The compound can be stabilized in the sintered body by using a raw material which is formed in the form of the above-mentioned compound beforehand, and the compound remains. However, the same effect can be obtained if the above compound can be produced by reaction sintering or the like. The above compounds may be present as long as they can be subjected to XRD measurement of the sample collected from the sintered body and define the peak of the compound phase.

本案之燒結體中,較理想是鉻與硼之原子比為Cr/B≧1。此係藉由實驗而確認者,其係因為若落於此範圍外則變得容易與水反應。雖然亦可使用此範圍外之範圍,但此原子比可謂是更佳之範圍。 In the sintered body of the present invention, it is preferred that the atomic ratio of chromium to boron is Cr/B≧1. This was confirmed by experiments because it became easy to react with water if it fell outside the range. Although the range outside this range can also be used, this atomic ratio is a better range.

又,本案之燒結體中,較理想是硼與氧之原子比為B/O≦ 0.5。此係藉由實驗而確認者,其係因為若落於此範圍外則變得容易與水反應。雖然亦可使用此範圍外之範圍,但此原子比可謂是更佳之範圍。 Further, in the sintered body of the present invention, it is preferred that the atomic ratio of boron to oxygen is B/O≦ 0.5. This was confirmed by experiments because it became easy to react with water if it fell outside the range. Although the range outside this range can also be used, this atomic ratio is a better range.

本案發明之燒結體(特別是磁記錄膜用濺鍍靶)雖然可應用於一般的磁性靶材,但作為代表且較佳的磁性材,為鉻含量0~50mol%、硼及/或鉑族元素之含量為0(唯,不包括0)~40mol%,剩餘部份為鈷。於此情形時亦與上述相同,意指可為鉻金屬單質,亦可為選自硼及/或鉑族元素中之一種或兩種以上之金屬,或亦可為其等之合金。 The sintered body of the present invention (particularly, a sputtering target for a magnetic recording film) can be applied to a general magnetic target, but a representative and preferable magnetic material has a chromium content of 0 to 50 mol%, boron and/or a platinum group. The content of the element is 0 (only, excluding 0) ~ 40 mol%, and the remainder is cobalt. In this case, it is the same as the above, and means that it may be a simple substance of chrome metal, or a metal selected from one or more of boron and/or a platinum group element, or an alloy thereof.

本案發明由於以上述型態含有氧化硼一事係本案發明之重點(要),因此雖說並無必要限定成上述組成範圍,但作為較佳的磁性材之基本組成可列舉上述組成範圍。 The present invention has a focus on the present invention in that it contains boron oxide in the above-described form. Therefore, it is not necessary to be limited to the above composition range. However, the basic composition of the preferred magnetic material is as described above.

本案發明之燒結體(特別是磁記錄膜用濺鍍靶)中,可適用氧化硼之含量(亦可稱為添加量)以B2O3換算為0.5~10mol%。唯,作為成分所含有之硼,較理想為以Cr(BO3)、Co2B2O5、Co3B2O6中之任一種化合物之型態存在。 In the sintered body of the present invention (particularly, a sputtering target for a magnetic recording film), the content of boron oxide (which may also be referred to as an addition amount) is 0.5 to 10 mol% in terms of B 2 O 3 . The boron contained as a component is preferably present in a form of any one of Cr(BO 3 ), Co 2 B 2 O 5 , and Co 3 B 2 O 6 .

氧化鉻之合計含量以Cr2O3換算較理想為0.5~10mol%。此亦為表現作為磁記錄膜用濺鍍靶之較佳範圍者。 The total content of chromium oxide is preferably 0.5 to 10 mol% in terms of Cr 2 O 3 . This is also a preferred range of performance as a sputtering target for magnetic recording films.

除了上述記載之氧化物以外,含有以選自Al、Co、Cu、Fe、Ga、Ge、Hf、Li、Mg、Mn、Mo、Nb、Ni、Sb、Si、Sn、Ta、Te、Ti、V、W、Y、Zn或Zr中之一種以上元素作為構成成分的氧化物,總氧化物量以氧換算為2~8wt%。此亦為表現作為燒結體(特別是磁記錄膜用濺鍍靶)之較佳範圍者。 In addition to the oxides described above, it is selected from the group consisting of Al, Co, Cu, Fe, Ga, Ge, Hf, Li, Mg, Mn, Mo, Nb, Ni, Sb, Si, Sn, Ta, Te, Ti, One or more elements of V, W, Y, Zn or Zr are oxides as constituent components, and the total amount of oxide is 2 to 8 wt% in terms of oxygen. This is also a preferred range of performance as a sintered body (particularly, a sputtering target for a magnetic recording film).

關於此等之氧化物之添加,雖於實施例中並未特別表示,但係磁記錄膜中一般所添加之較佳材料,於本案發明中亦可相同地應用。 The addition of these oxides is not particularly shown in the examples, but a preferred material generally added to the magnetic recording film can be similarly applied in the present invention.

本案發明之燒結體(特別是磁記錄膜用濺鍍靶)中,上述氧化物相之每一粒子的平均面積較理想為2μm2以下。通常,可藉由研磨(視 需要伴隨磨碎)靶表面來觀察氧化物相,較理想為此氧化物相微細地分散。 In the sintered body of the present invention (particularly, a sputtering target for a magnetic recording film), the average area of each of the oxide phases is preferably 2 μm 2 or less. In general, the oxide phase can be observed by grinding (as needed with the grinding) of the target surface, preferably with fine dispersion of the oxide phase.

其原因在於若存在有粗大化的氧化物相,則變得容易伴隨產生濺鍍時之電弧或顆粒。再者,上述面積係表示作為磁記錄膜用濺鍍靶之較佳範圍,根據使用目的或與其他材料之關聯並不會妨礙使用超過其等之範圍。 The reason for this is that if a coarsened oxide phase is present, it becomes easy to cause an arc or a particle at the time of sputtering. Further, the above-mentioned area indicates a preferable range as a sputtering target for a magnetic recording film, and depending on the purpose of use or the association with other materials, the range beyond which it is used is not hindered.

關於上述所說明之本案發明之燒結體(特別是磁記錄膜用濺鍍靶),進一步附加地含有0.5mol%以上且10mol%以下之選自Ti、V、Mn、Zr、Nb、Mo、Ta、W中之一種元素以上作為單質之添加元素。此等添加元素係為了使作為磁記錄媒體之特性提高而視需要添加者。 The sintered body of the present invention (particularly, a sputtering target for a magnetic recording film) described above is further contained in an amount of 0.5 mol% or more and 10 mol% or less selected from the group consisting of Ti, V, Mn, Zr, Nb, Mo, and Ta. One element of W or more is added as a simple element. These additional elements are added as needed in order to improve the characteristics of the magnetic recording medium.

關於此等之添加元素,雖於實施例中並未特別表示,但係磁記錄膜中一般所添加之較佳材料,而於本案發明中亦可相同地應用。 Although the additive elements are not particularly shown in the examples, they are preferred materials which are generally added to the magnetic recording film, and can be similarly applied in the present invention.

同樣的,可含有選自碳、氮化物、碳化物中之一種以上的無機物材料作為添加材料。其等亦係為了使作為磁記錄媒體之特性提高而視需要添加之元素。 Similarly, an inorganic material selected from the group consisting of carbon, nitride, and carbide may be contained as an additive material. These are also elements which are added as needed in order to improve the characteristics of the magnetic recording medium.

關於上述成分組成之本案發明之燒結體(特別是磁記錄膜用濺鍍靶),可達成相對密度在95%以上、進一步為98%以上,甚至為99%以上。燒結體密度雖然可藉由燒結溫度與熱壓或HIP之壓力來調整,但若溫度過高則氧化物相粒子成長而粗大化,因此較理想為極力降低燒結溫度,提高壓力。較理想為燒結溫度在1100℃以下,壓力在250kgf/cm2以上。成型/燒結並不侷限於熱壓,亦可使用電漿放電燒結法、熱靜水壓燒結法。 With respect to the sintered body of the present invention (particularly, a sputtering target for a magnetic recording film) having the above composition, the relative density can be 95% or more, further 98% or more, or even 99% or more. Although the density of the sintered body can be adjusted by the sintering temperature and the pressure of hot pressing or HIP, if the temperature is too high, the oxide phase particles grow and coarsen. Therefore, it is preferable to lower the sintering temperature and increase the pressure as much as possible. Preferably, the sintering temperature is 1100 ° C or lower and the pressure is 250 kgf / cm 2 or more. The molding/sintering is not limited to hot pressing, and a plasma discharge sintering method or a hot hydrostatic sintering method may also be used.

再者,相對密度係指靶之實測密度除以計算密度(亦稱為理論密度)所求得之值。計算密度係指假設靶的構成成分不會相互擴散或反應下混合存在時的密度,以下式來計算。 Furthermore, relative density refers to the value obtained by dividing the measured density of the target by the calculated density (also known as the theoretical density). The calculated density is calculated by the following formula assuming that the constituent components of the target do not diffuse or react under the mixing.

式:計算密度=sigma Σ(構成成分之分子量×構成成分之莫耳比)/Σ(構成成分之分子量×構成元素之莫耳比/構成成分之文獻值密度)此處之Σ意指對靶所有的構成成分取總和。 Formula: Calculated density = sigma Σ (molecular weight of constituent components × molar ratio of constituent components) / Σ (molecular weight of constituent components × molar ratio of constituent elements / literature value density of constituent components) Here, Σ means the target All constituents are summed.

以下將本案發明之成分組成範圍的一部分以實施例(代表例)之型式列舉,但本案發明中所規定之成分組成範圍的燒結體(特別是磁記錄膜用濺鍍靶)具有與下述實施例同等效果。 In the following, a part of the composition range of the invention of the present invention is exemplified by the examples (representative examples), but the sintered body (especially the sputtering target for magnetic recording film) having the composition range specified in the invention of the present invention has the following implementation The same effect.

[實施例] [Examples]

以下,基於實施例及比較例來說明。另,本實施例僅是一例示,並不受到此例示的任何限制。亦即,本發明僅受到申請專利範圍的限制,而包含本發明所含之實施例以外的各種變形。 Hereinafter, it demonstrates based on an Example and a comparative example. In addition, this embodiment is only an example and is not limited by this illustration. That is, the present invention is limited only by the scope of the patent application, and includes various modifications other than the embodiments included in the invention.

(實施例1) (Example 1)

準備氧化硼與氧化鉻或氧化鈷,分別秤量成B2O3:Cr2O3=1:1、B2O3:CoO=1:2、B2O3:CoO=1:3,以球磨機混合後,將其以700~1200℃之範圍於大氣中進行五小時以上之燒成,藉此製造選自Cr(BO3)、Co2B2O5、Co3B2O6中之一種或兩種以上之化合物。又,亦可以改變摻合比率而將原料調整成複數之化合物及單純氧化物共存。 Prepare boron oxide and chromium oxide or cobalt oxide, and weigh them into B 2 O 3 :Cr 2 O 3 =1:1, B 2 O 3 :CoO=1:2, B 2 O 3 :CoO=1:3, After mixing in a ball mill, it is fired in the air at a temperature of 700 to 1200 ° C for more than five hours, thereby producing a material selected from the group consisting of Cr(BO 3 ), Co 2 B 2 O 5 , and Co 3 B 2 O 6 . One or two or more compounds. Further, it is also possible to change the blending ratio and adjust the compound to a plurality of compounds and a simple oxide.

進一步,將其等粉碎而形成燒結原料(氧化物)。又,亦可以改變摻合比率而將原料調整成複數之化合物及單純氧化物共存。於粉碎時使用球磨機。 Further, these are pulverized to form a sintered raw material (oxide). Further, it is also possible to change the blending ratio and adjust the compound to a plurality of compounds and a simple oxide. A ball mill is used for pulverization.

接著,將此燒結原料與至少含有鈷作為金屬且選自鉻與鉑族元素中之一種以上的金屬之原料粉末,和視需要之氧化物的原料粉末調整成表1所示之比例,利用球磨機混合20小時以上後,填充於直徑為尺寸50之石墨鑄模,於真空中以900~1100℃之燒結溫度進行熱壓燒結。 Next, the sintered raw material and the raw material powder containing at least one of chromium and a metal selected from the group consisting of chromium and a platinum group element, and a raw material powder of an optional oxide are adjusted to the ratio shown in Table 1, using a ball mill. After mixing for more than 20 hours, fill in a diameter of 50 The graphite mold is hot pressed and sintered at a sintering temperature of 900 to 1100 ° C in a vacuum.

然後藉由機械加工而形成圓盤形狀後,於室溫浸漬於純水1小時,之後進行乾燥而觀察表面。再者,關於下述實施例、比較例其製造方法及試驗方法亦設為與本實施例相同之條件。 Then, the disk shape was formed by mechanical processing, and then immersed in pure water at room temperature for 1 hour, and then dried to observe the surface. In addition, the manufacturing method and test method of the following examples and comparative examples are also the same conditions as this embodiment.

實施例1之形成為基質之磁性材料的各成分組成設為Co:69mol%、Cr:5mol%、:Pt:20mol%。另一方面,氧化物設為Cr(BO3): 2mol%、Cr2O3:2mol%、SiO2:2mol%。Cr/B比為5.5。又,B/O比為0.1。其等滿足本案發明之條件。 The composition of each component of the magnetic material formed as a matrix in Example 1 was set to Co: 69 mol%, Cr: 5 mol%, and Pt: 20 mol%. On the other hand, the oxide is made of Cr(BO 3 ): 2 mol%, Cr 2 O 3 : 2 mol%, and SiO 2 : 2 mol%. The Cr/B ratio was 5.5. Also, the B/O ratio is 0.1. They satisfy the conditions of the invention of the present invention.

將此結果示於表1。靶中之氧化物相的每一粒子的平均面積為1.5μm2。又,氧化物相的每一粒子的平均面積係以如下方式求得者。首先,將從靶任意地採集之樣品之表面研磨成鏡面,以25×18μm之視野攝影雷射顯微鏡影像。氧化物相與金屬相由於反射率大不相同,因此藉由影像之明暗差來進行判別。 The results are shown in Table 1. The average area of each particle of the oxide phase in the target was 1.5 μm 2 . Further, the average area of each particle of the oxide phase was determined as follows. First, the surface of the sample arbitrarily collected from the target was ground to a mirror surface, and a laser microscope image was photographed at a field of 25 × 18 μm. Since the oxide phase and the metal phase are greatly different in reflectance, discrimination is made by the difference in brightness between the images.

藉此求出氧化物相之總面積與個數,算出每一粒子之平均面積(氧化物相之總面積÷個數)。以下之實施例、比較例亦以相同方法算出。於上述計算時,使用軟體(KEYENCE公司製造之形狀解析應用程式VK-H1A1),由雷射顯微鏡影像來求出。 From this, the total area and number of oxide phases were determined, and the average area of each particle (the total area of the oxide phase) was calculated. The following examples and comparative examples were also calculated in the same manner. In the above calculation, the software (shape analysis application VK-H1A1 manufactured by KEYENCE Corporation) was used to obtain the laser microscope image.

浸漬於水後之燒結體的表面其外觀完全沒變色。又,此燒結體之相對密度為96.5%。由以相同原料及製造條件製作而得之尺寸180的燒結體來製作靶並實施濺鍍,結果恆定狀態時之顆粒產生數為2個,如上述般可得到高密度靶,顆粒產生數為較少之結果。 The surface of the sintered body immersed in water showed no discoloration at all. Further, the sintered body had a relative density of 96.5%. Dimensions 180 made from the same raw materials and manufacturing conditions The sintered body was used to produce a target and sputtering was performed. As a result, the number of particles generated in a constant state was two, and as described above, a high-density target was obtained, and the number of particles generated was small.

(實施例2) (Example 2)

除了將各成分組成調整成表1以外,以與實施例1相同的條件製作燒結體。 A sintered body was produced under the same conditions as in Example 1 except that the composition of each component was adjusted to Table 1.

實施例2之成為基質之磁性材料的各成分組成設為Co:60mol%、Cr:5mol%、Pt:20mol%、Ru:5mol%。 The composition of each component of the magnetic material to be a matrix of Example 2 was set to Co: 60 mol%, Cr: 5 mol%, Pt: 20 mol%, and Ru: 5 mol%.

另一方面,氧化物設為Cr(BO3):10mol%。Cr/B比為1.5。又,B/O比為0.3。其等滿足本案發明之條件。 On the other hand, the oxide was set to Cr (BO 3 ): 10 mol%. The Cr/B ratio was 1.5. Also, the B/O ratio is 0.3. They satisfy the conditions of the invention of the present invention.

將此結果同樣示於表1。靶中之氧化物相的每一粒子的平均面積為1.9μm2。浸漬於水後之燒結體的表面其外觀完全沒變色。又,此燒結體之相對密度為95.8%。 The results are also shown in Table 1. The average area of each particle of the oxide phase in the target was 1.9 μm 2 . The surface of the sintered body immersed in water showed no discoloration at all. Further, the sintered body had a relative density of 95.8%.

(實施例3) (Example 3)

除了將各成分組成調整成表1以外,以與實施例1相同的條件製作燒結體。 A sintered body was produced under the same conditions as in Example 1 except that the composition of each component was adjusted to Table 1.

實施例3之成為基質之磁性材料的各成分組成設為Co:77.8mol%、Cr:5.3mol%、Pt:10.5mol%。 The composition of each component of the magnetic material to be the matrix of Example 3 was set to Co: 77.8 mol%, Cr: 5.3 mol%, and Pt: 10.5 mol%.

另一方面,氧化物設為Cr(BO3):4.2mol%、Co2B2O5:1.1、Co3B2O6:1.1。Cr/B比為1.7。又,B/O比為0.3。其等滿足本案發明之條件。 On the other hand, the oxide was made of Cr(BO 3 ): 4.2 mol%, Co 2 B 2 O 5 : 1.1, and Co 3 B 2 O 6 : 1.1. The Cr/B ratio was 1.7. Also, the B/O ratio is 0.3. They satisfy the conditions of the invention of the present invention.

將此結果同樣示於表1。靶中之氧化物相的每一粒子的平均面積為1.1μm2。浸漬於水後之燒結體的表面其外觀完全沒變色。又,此燒結體之相對密度為96.1%。 The results are also shown in Table 1. The average area of each particle of the oxide phase in the target was 1.1 μm 2 . The surface of the sintered body immersed in water showed no discoloration at all. Further, the sintered body had a relative density of 96.1%.

(實施例4) (Example 4)

除了將各成分組成調整成表1以外,以與實施例1相同的條件製作燒結體。 A sintered body was produced under the same conditions as in Example 1 except that the composition of each component was adjusted to Table 1.

實施例4之成為基質之磁性材料的各成分組成設為Co:75.2mol%、Pt:21.5mol%。 The composition of each component of the magnetic material of the substrate of Example 4 was set to Co: 75.2 mol%, and Pt: 21.5 mol%.

另一方面,氧化物設為Co2B2O5:2.2、Co3B2O6:1.1。Cr/B比為0.0。又,B/O比為0.4。其等滿足本案發明之條件。 On the other hand, the oxide was set to Co 2 B 2 O 5 : 2.2 and Co 3 B 2 O 6 : 1.1. The Cr/B ratio is 0.0. Also, the B/O ratio is 0.4. They satisfy the conditions of the invention of the present invention.

將此結果同樣示於表1。靶中之氧化物相的每一粒子的平均面積為2.0μm2。浸漬於水後之燒結體的表面其外觀完全沒變色。又,此燒結體之相對密度為97.1%。 The results are also shown in Table 1. The average area of each particle of the oxide phase in the target was 2.0 μm 2 . The surface of the sintered body immersed in water showed no discoloration at all. Further, the sintered body had a relative density of 97.1%.

(實施例5) (Example 5)

除了將各成分組成調整成表1以外,以與實施例1相同的條件製作燒結體。 A sintered body was produced under the same conditions as in Example 1 except that the composition of each component was adjusted to Table 1.

實施例5之成為基質之磁性材料的各成分組成設為Co:71.4mol%、Pt:20.4mol%。 The composition of each component of the magnetic material to be the matrix of Example 5 was set to Co: 71.4 mol%, and Pt: 20.4 mol%.

另一方面,氧化物設為Cr(BO3):4.1mol%、Co2B2O5:1、TiO2:3.1mol%。Cr/B比為0.7。又,B/O比為0.3。除了Cr/B比以外,滿足本案發明之條件。 On the other hand, the oxide was Cr (BO 3 ): 4.1 mol%, Co 2 B 2 O 5 : 1, and TiO 2 : 3.1 mol%. The Cr/B ratio was 0.7. Also, the B/O ratio is 0.3. In addition to the Cr/B ratio, the conditions of the invention of the present invention are satisfied.

將此結果同樣示於表1。靶中之氧化物相的每一粒子的平均面積為1.2μm2。浸漬於水後之燒結體的表面其外觀完全沒變色。又,此燒結體之相對密度為97.5%。由以相同原料及製造條件製作而得之尺寸180的燒結體來製作靶並實施濺鍍,結果恆定狀態時之顆粒產生數為3個,如上述般可得到高密度靶,顆粒產生數為較少之結果。 The results are also shown in Table 1. The average area of each particle of the oxide phase in the target was 1.2 μm 2 . The surface of the sintered body immersed in water showed no discoloration at all. Further, the sintered body had a relative density of 97.5%. Dimensions 180 made from the same raw materials and manufacturing conditions The sintered body was used to produce a target and sputtering was performed. As a result, the number of particles generated in a constant state was three, and as described above, a high-density target was obtained, and the number of particles generated was small.

(實施例6) (Example 6)

除了將各成分組成調整成表1以外,以與實施例1相同的條件製作燒結體。 A sintered body was produced under the same conditions as in Example 1 except that the composition of each component was adjusted to Table 1.

實施例6之成為基質之磁性材料的各成分組成設為Co:55mol%、Cr:30mol%、Ru:5mol%。 The composition of each component of the magnetic material to be a matrix of Example 6 was set to Co: 55 mol%, Cr: 30 mol%, and Ru: 5 mol%.

另一方面,氧化物設為Cr(BO3):2mol%、TiO2:8mol%。Cr/B比為16。又,B/O比為0.09。任一者皆滿足本案發明之條件。 On the other hand, the oxide was made of Cr(BO 3 ): 2 mol%, and TiO 2 : 8 mol%. The Cr/B ratio is 16. Also, the B/O ratio is 0.09. Either of them satisfies the conditions of the invention of the present invention.

將此結果同樣示於表1。靶中之氧化物相的每一粒子的平均面積為1.9μm2。浸漬於水後之燒結體的表面其外觀完全沒變色。又,此燒結體之相對密度為99.5%。由以相同原料及製造條件製作而得之尺寸180的燒結體來製作靶並實施濺鍍,結果恆定狀態時之顆粒產生數為9個,如上述般可得到高密度靶,顆粒產生數為較少之結果。 The results are also shown in Table 1. The average area of each particle of the oxide phase in the target was 1.9 μm 2 . The surface of the sintered body immersed in water showed no discoloration at all. Further, the sintered body had a relative density of 99.5%. Dimensions 180 made from the same raw materials and manufacturing conditions The sintered body was used to form a target and sputtering was performed. As a result, the number of particles generated in a constant state was nine, and as described above, a high-density target was obtained, and the number of particles generated was small.

(實施例7) (Example 7)

除了將各成分組成調整成表1以外,以與實施例1相同的條件製作燒結體。 A sintered body was produced under the same conditions as in Example 1 except that the composition of each component was adjusted to Table 1.

實施例7之成為基質之磁性材料的各成分組成設為Co:55mol%、Cr:30mol%、B:5mol%。 The composition of each component of the magnetic material to be the matrix of Example 7 was set to Co: 55 mol%, Cr: 30 mol%, and B: 5 mol%.

另一方面,氧化物設為CoO:6mol%、TiO2:4mol%。Cr/B比為6。又,B/O比為0.36。任一者皆滿足本案發明之條件。 On the other hand, the oxide was set to CoO: 6 mol%, and TiO 2 : 4 mol%. The Cr/B ratio is 6. Also, the B/O ratio was 0.36. Either of them satisfies the conditions of the invention of the present invention.

燒結後,藉由試樣之XRD測定可確認到一部分生成Cr(BO3)。XRD測定條件係:使用理學公司製之UltimaIV、使用CuK α射線、管電壓:40kV、管電流:30mA、掃瞄速度:1°/min、步寬:0.01°、掃描角度範囲(2 θ):24°~35°。可藉由33.79°附近表現之Cr(BO3)的第一波峰或於25.68°附近表現之Cr(BO3)的第二波峰之中不與其他生成物之波峰重疊之波峰來確認。 After the sintering, it was confirmed by XRD measurement of the sample that a part of Cr (BO 3 ) was formed. XRD measurement conditions were: Ultima IV manufactured by Rigaku Corporation, CuK α ray, tube voltage: 40 kV, tube current: 30 mA, scanning speed: 1°/min, step width: 0.01°, scanning angle range (2 θ): 24°~35°. It can be confirmed by a peak which does not overlap with the peak of the other product among the first peak of Cr(BO 3 ) expressed in the vicinity of 33.79° or the second peak of Cr(BO 3 ) which is expressed near 25.68°.

於本實施例中,第一波峰之強度為120cps,第二波峰之強度為70cps(背景強度約為50cps)。再者,其等之強度值由於會因測定條件及試樣調整而變動,因此上述數值僅為一例,並不受其等數值限定。 In this embodiment, the intensity of the first peak is 120 cps, and the intensity of the second peak is 70 cps (background intensity is about 50 cps). In addition, since the intensity value of these changes by the measurement conditions and the sample adjustment, the above numerical value is only an example, and is not limited by the numerical value.

將此結果同樣示於表1。靶中之氧化物相的每一粒子的平均面積為1.9μm2。浸漬於水後之燒結體的表面其外觀完全沒變色。又,此燒結體之相對密度為99%。由以相同原料及製造條件製作而得之尺寸180的燒結體來製作靶並實施濺鍍,結果恆定狀態時之顆粒產生數為10個,如上 述般可得到高密度靶,顆粒產生數為較少之結果。 The results are also shown in Table 1. The average area of each particle of the oxide phase in the target was 1.9 μm 2 . The surface of the sintered body immersed in water showed no discoloration at all. Further, the sintered body had a relative density of 99%. Dimensions 180 made from the same raw materials and manufacturing conditions The sintered body was used to produce a target and sputtering was performed. As a result, the number of particles generated in a constant state was 10, and as described above, a high-density target was obtained, and the number of particles generated was small.

(實施例8) (Example 8)

除了將各成分組成調整成表1以外,以與實施例1相同的條件製作燒結體。 A sintered body was produced under the same conditions as in Example 1 except that the composition of each component was adjusted to Table 1.

實施例8之成為基質之磁性材料的各成分組成設為Co:60mol%、Cr:5mol%、Pt:24mol%。 The composition of each component of the magnetic material to be the matrix of Example 8 was set to Co: 60 mol%, Cr: 5 mol%, and Pt: 24 mol%.

另一方面,氧化物設為Cr(BO3):4mol%、SiO2:4mol%、CoO:3mol%。Cr/B比為2.25。又,B/O比為0.17。任一者皆滿足本案發明之條件。 On the other hand, the oxide was made of Cr(BO 3 ): 4 mol%, SiO 2 : 4 mol%, and CoO: 3 mol%. The Cr/B ratio was 2.25. Also, the B/O ratio was 0.17. Either of them satisfies the conditions of the invention of the present invention.

將此結果同樣示於表1。靶中之氧化物相的每一粒子的平均面積為1.1μm2。浸漬於水後之燒結體的表面其外觀完全沒變色。又,此燒結體之相對密度為99.2%。由以相同原料及製造條件製作而得之尺寸180的燒結體來製作靶並實施濺鍍,結果恆定狀態時之顆粒產生數為4個,如上述般可得到高密度靶,顆粒產生數為較少之結果。 The results are also shown in Table 1. The average area of each particle of the oxide phase in the target was 1.1 μm 2 . The surface of the sintered body immersed in water showed no discoloration at all. Further, the sintered body had a relative density of 99.2%. Dimensions 180 made from the same raw materials and manufacturing conditions The sintered body was used to produce a target and sputtering was performed. As a result, the number of particles generated in a constant state was four, and as described above, a high-density target was obtained, and the number of particles generated was small.

(實施例9) (Example 9)

除了將各成分組成調整成表1以外,以與實施例1相同的條件製作燒結體。 A sintered body was produced under the same conditions as in Example 1 except that the composition of each component was adjusted to Table 1.

實施例9之成為基質之磁性材料的各成分組成設為Co:73mol%、Cr:2mol%、Pt:17mol%。 The composition of each component of the magnetic material of the substrate of Example 9 was set to Co: 73 mol%, Cr: 2 mol%, and Pt: 17 mol%.

另一方面,氧化物設為Cr(BO3):2mol%、Ta2O5:2mol%、WO3:4mol%。Cr/B比為2。又,B/O比為0.07。任一者皆滿足本案發明之條件。 On the other hand, the oxide is made of Cr(BO 3 ): 2 mol%, Ta 2 O 5 : 2 mol%, and WO 3 : 4 mol%. The Cr/B ratio is 2. Also, the B/O ratio was 0.07. Either of them satisfies the conditions of the invention of the present invention.

將此結果同樣示於表1。靶中之氧化物相的每一粒子的平均面積為1.5μm2。浸漬於水後之燒結體的表面其外觀完全沒變色。又,此燒結體之相對密度為98%。由以相同原料及製造條件製作而得之尺寸180的燒結體來製作靶並實施濺鍍,結果恆定狀態時之顆粒產生數為5個,如上述般可得到高密度靶,顆粒產生數為較少之結果。 The results are also shown in Table 1. The average area of each particle of the oxide phase in the target was 1.5 μm 2 . The surface of the sintered body immersed in water showed no discoloration at all. Further, the sintered body had a relative density of 98%. Dimensions 180 made from the same raw materials and manufacturing conditions The sintered body was used to produce a target and sputtering was performed. As a result, the number of particles generated in a constant state was five, and as described above, a high-density target was obtained, and the number of particles generated was small.

(實施例10) (Embodiment 10)

除了將各成分組成調整成表1以外,以與實施例1相同的條件製作燒結體。 A sintered body was produced under the same conditions as in Example 1 except that the composition of each component was adjusted to Table 1.

實施例10之成為基質之磁性材料的各成分組成設為Co:65mol%、Cr:4mol%、Pt:25mol%。 The composition of each component of the magnetic material to be the matrix of Example 10 was set to Co: 65 mol%, Cr: 4 mol%, and Pt: 25 mol%.

另一方面,氧化物設為Cr(BO3):2mol%、B2O3:2mol%、Nb2O5:2mol%。Cr/B比為1。又,B/O比為0.27。任一者皆滿足本案發明之條件。 On the other hand, the oxide is Cr (BO 3 ): 2 mol%, B 2 O 3 : 2 mol%, and Nb 2 O 5 : 2 mol%. The Cr/B ratio is 1. Also, the B/O ratio was 0.27. Either of them satisfies the conditions of the invention of the present invention.

將此結果同樣示於表1。靶中之氧化物相的每一粒子的平均面積為1.6μm2。浸漬於水後之燒結體的表面其外觀完全沒變色。又,此燒結體之相對密度為98.8%。由以相同原料及製造條件製作而得之尺寸180的燒結體來製作靶並實施濺鍍,結果恆定狀態時之顆粒產生數為6個,如上述般可得到高密度靶,顆粒產生數為較少之結果。 The results are also shown in Table 1. The average area of each particle of the oxide phase in the target was 1.6 μm 2 . The surface of the sintered body immersed in water showed no discoloration at all. Further, the sintered body had a relative density of 98.8%. Dimensions 180 made from the same raw materials and manufacturing conditions The sintered body was used to form a target and sputtering was performed. As a result, the number of particles generated in a constant state was six, and as described above, a high-density target was obtained, and the number of particles generated was small.

(比較例1) (Comparative Example 1)

除了將各成分組成調整成表1以外,以與實施例1相同的條件製作燒結體。 A sintered body was produced under the same conditions as in Example 1 except that the composition of each component was adjusted to Table 1.

比較例1之成為基質之磁性材料的各成分組成設為Co:63mol%、Cr:5mol%、Pt:20mol%、Ru:5mol%。 The composition of each component of the magnetic material to be a matrix of Comparative Example 1 was set to Co: 63 mol%, Cr: 5 mol%, Pt: 20 mol%, and Ru: 5 mol%.

另一方面,氧化物設為B2O3:5mol%、SiO2:2mol%。Cr/B比為0.5。又,B/O比為0.5,且燒結體中並未確認到Cr(BO3)、Co2B2O5、Co3B2O6之化合物。其等並未滿足本案發明之條件。 On the other hand, the oxide is B 2 O 3 : 5 mol%, and SiO 2 : 2 mol%. The Cr/B ratio is 0.5. Further, the B/O ratio was 0.5, and no compound of Cr(BO 3 ), Co 2 B 2 O 5 or Co 3 B 2 O 6 was observed in the sintered body. They did not satisfy the conditions of the invention of the present invention.

將此結果同樣示於表1。靶中之氧化物相的每一粒子的平均面積為4.3μm2。浸漬於水後之燒結體的表面其外觀變色。又,此燒結體之相對密度為96%。由以相同原料及製造條件製作而得之尺寸180的燒結體來製作靶並實施濺鍍,結果恆定狀態時之顆粒產生數為20個,顆粒產生數為較多之結果。 The results are also shown in Table 1. The average area of each particle of the oxide phase in the target was 4.3 μm 2 . The surface of the sintered body immersed in water is discolored in appearance. Further, the sintered body had a relative density of 96%. Dimensions 180 made from the same raw materials and manufacturing conditions The sintered body was used to produce a target and sputtering was performed. As a result, the number of particles generated in a constant state was 20, and the number of particles generated was large.

(比較例2) (Comparative Example 2)

除了將各成分組成調整成表1以外,以與實施例1相同的條件製作燒結體。然而,並未於事前製作Cr(BO3)、Co2B2O5、Co3B2O6之化合物粉。 A sintered body was produced under the same conditions as in Example 1 except that the composition of each component was adjusted to Table 1. However, the compound powder of Cr(BO 3 ), Co 2 B 2 O 5 , and Co 3 B 2 O 6 was not produced beforehand.

比較例2之成為基質之磁性材料的各成分組成設為Co:68mol%、Cr:5mol%、Pt:20mol%。另一方面,氧化物設為B2O3:5mol%、Cr2O3:2mol%。Cr/B比為0.9。又,B/O比為0.5。Cr/B比並未滿足本案發明之條件。 The composition of each component of the magnetic material to be the matrix of Comparative Example 2 was set to Co: 68 mol%, Cr: 5 mol%, and Pt: 20 mol%. On the other hand, the oxide is B 2 O 3 : 5 mol%, and Cr 2 O 3 : 2 mol%. The Cr/B ratio was 0.9. Also, the B/O ratio is 0.5. The Cr/B ratio did not satisfy the conditions of the invention of the present invention.

將此結果同樣示於表1。靶中之氧化物相的每一粒子的平均面積為1.8μm2。浸漬於水後之燒結體的表面其外觀變色。又,此燒結體之相對密度為93%。由以相同原料及製造條件製作而得之尺寸180的燒結體來製作靶並實施濺鍍,結果恆定狀態時之顆粒產生數為34個,如上述般得到密度低之靶,顆粒產生數為較多之結果。 The results are also shown in Table 1. The average area of each particle of the oxide phase in the target was 1.8 μm 2 . The surface of the sintered body immersed in water is discolored in appearance. Further, the sintered body had a relative density of 93%. Dimensions 180 made from the same raw materials and manufacturing conditions The sintered body was used to produce a target and sputtering was performed. As a result, the number of particles generated in a constant state was 34, and as described above, a target having a low density was obtained, and the number of particles generated was large.

(比較例3) (Comparative Example 3)

除了將各成分組成調整成表1以外,以與實施例1相同的條件製作燒結體。 A sintered body was produced under the same conditions as in Example 1 except that the composition of each component was adjusted to Table 1.

比較例3之成為基質之磁性材料的各成分組成設為Co:73mol%、Pt:20mol%。另一方面,氧化物設為B2O3:6mol%、Co3B2O6:1mol%。Cr/B比為0。又,B/O比為0.6。其等並未滿足本案發明之條件。 The composition of each component of the magnetic material to be a matrix of Comparative Example 3 was set to Co: 73 mol%, and Pt: 20 mol%. On the other hand, the oxide is B 2 O 3 : 6 mol%, and Co 3 B 2 O 6 : 1 mol%. The Cr/B ratio is zero. Also, the B/O ratio is 0.6. They did not satisfy the conditions of the invention of the present invention.

將此結果同樣示於表1。靶中之氧化物相的每一粒子的平均面積為5.1μm2。浸漬於水後之燒結體的表面其外觀變色。又,此燒結體之相對密度為96.3%。 The results are also shown in Table 1. The average area of each particle of the oxide phase in the target was 5.1 μm 2 . The surface of the sintered body immersed in water is discolored in appearance. Further, the sintered body had a relative density of 96.3%.

(比較例4) (Comparative Example 4)

除了將各成分組成調整成表1以外,以與實施例1相同的條件製作燒結體。 A sintered body was produced under the same conditions as in Example 1 except that the composition of each component was adjusted to Table 1.

比較例4之成為基質之磁性材料的各成分組成設為Co:66mol%、Cr: 9mol%,且設為B:10mol%。另一方面,氧化物設為CoO:7mol%、TiO2:8mol%。Cr/B比為0.9。又,B/O比為0.43。並未滿足本案發明之條件。又,燒結後之試樣的XRD測定中,無法確認到生成Cr(BO3)。 The composition of each component of the magnetic material to be a matrix of Comparative Example 4 was set to Co: 66 mol%, Cr: 9 mol%, and B: 10 mol%. On the other hand, the oxide was set to CoO: 7 mol%, and TiO 2 : 8 mol%. The Cr/B ratio was 0.9. Also, the B/O ratio is 0.43. The conditions of the invention of the present invention were not met. Further, in the XRD measurement of the sample after sintering, it was not confirmed that Cr (BO 3 ) was formed.

將此結果同樣示於表1。靶中之氧化物相的每一粒子的平均面積為3.8μm2。浸漬於水後之燒結體的表面其外觀變色。其係Cr/B比較小,相對於Cr量B量較多之結果,認為大量產生氧化硼,發生氧化物粒子之粗大化。又,此燒結體之相對密度為99.0%。 The results are also shown in Table 1. The average area of each particle of the oxide phase in the target was 3.8 μm 2 . The surface of the sintered body immersed in water is discolored in appearance. The Cr/B ratio is relatively small, and as a result of the large amount of Cr amount B, it is considered that a large amount of boron oxide is generated and coarsening of the oxide particles occurs. Further, the sintered body had a relative density of 99.0%.

(比較例5) (Comparative Example 5)

除了將各成分組成調整成表1以外,以與實施例1相同的條件製作燒結體。 A sintered body was produced under the same conditions as in Example 1 except that the composition of each component was adjusted to Table 1.

比較例5之成為基質之磁性材料的各成分組成設為Co:50mol%、Cr:30mol%,且設為Ru:10mol%。另一方面,氧化物設為B2O3:7mol%、SiO2:3mol%。Cr/B比為2.1。又,B/O比為0.52。並未滿足本案發明之條件。又,燒結後之試樣的XRD測定中,無法確認到生成Cr(BO3)。 The composition of each component of the magnetic material to be the matrix of Comparative Example 5 was set to Co: 50 mol%, Cr: 30 mol%, and Ru: 10 mol%. On the other hand, the oxide is B 2 O 3 : 7 mol%, and SiO 2 : 3 mol%. The Cr/B ratio was 2.1. Also, the B/O ratio was 0.52. The conditions of the invention of the present invention were not met. Further, in the XRD measurement of the sample after sintering, it was not confirmed that Cr (BO 3 ) was formed.

將此結果同樣示於表1。靶中之氧化物相的每一粒子的平均面積為8.2μm2。浸漬於水後之燒結體的表面其外觀變色。認為其原因在於氧化硼之存在所引起之氧化物粒子之粗大化。又,此燒結體之相對密度為99.2%。 The results are also shown in Table 1. The average area of each particle of the oxide phase in the target was 8.2 μm 2 . The surface of the sintered body immersed in water is discolored in appearance. The reason for this is considered to be the coarsening of the oxide particles caused by the presence of boron oxide. Further, the sintered body had a relative density of 99.2%.

[產業上之可利用性] [Industrial availability]

以前,添加有氧化硼作為無機物的燒結體(特別是磁記錄膜用濺鍍靶)有下述問題:燒結後氧化硼之粒子大,若為了抑制粒子成長而降低燒結溫度,則密度無法提高,顆粒大量產生。 In the past, a sintered body to which boron oxide is added as an inorganic material (particularly, a sputtering target for a magnetic recording film) has a problem that the particles of boron oxide are large after sintering, and the density cannot be increased by reducing the sintering temperature in order to suppress particle growth. A large amount of particles are produced.

其原因在於,由於氧化硼原料吸溼性高而容易凝固,因此難以得到細緻之氧化硼,再加上氧化硼其熔點低,因此於燒結中容易被液狀化,於燒 結中會成長為大粒子。 The reason for this is that since the boron oxide raw material has high hygroscopicity and is easily solidified, it is difficult to obtain fine boron oxide, and boron oxide has a low melting point, so that it is easily liquidified during sintering. The knot will grow into large particles.

有鑑於此點,本案發明之燒結體(特別是磁記錄膜用濺鍍靶)中,形成為:於由氧化物構成之相存在Cr(BO3)、Co2B2O5、Co3B2O6中之至少一種以上。 In view of the above, the sintered body of the present invention (particularly, a sputtering target for a magnetic recording film) is formed such that Cr (BO 3 ), Co 2 B 2 O 5 , and Co 3 B are present in a phase composed of an oxide. At least one of 2 O 6 .

此等之Cr(BO3)、Co2B2O5、Co3B2O6之化合物具有下述特性:可維持微細之組織,並提高氧化硼熔點,可抑制與水反應。藉此,可解決氧化硼所引起之上述問題。如此,變得可確保添加有氧化硼之燒結體(特別是磁記錄膜用濺鍍靶)之良好品質,變得可抑制濺鍍中之顆粒產生。 These compounds of Cr(BO 3 ), Co 2 B 2 O 5 , and Co 3 B 2 O 6 have the following characteristics: they can maintain a fine structure and increase the melting point of boron oxide, thereby suppressing reaction with water. Thereby, the above problems caused by boron oxide can be solved. In this way, it is possible to ensure good quality of a sintered body to which boron oxide is added (especially, a sputtering target for a magnetic recording film), and it is possible to suppress generation of particles during sputtering.

又,於利用機械加工等將殘留有氧化硼之燒結體進行溼式加工時,或者於溼度高之場所保管時,與水分反應而生成硼酸,其於靶表面等析出而成為色斑或污染的原因,但同樣可解決此問題。 In addition, when the sintered body in which boron oxide remains is subjected to wet processing by mechanical processing or the like, or when stored in a place having high humidity, boric acid is generated by reaction with water, and precipitates on the target surface or the like to cause stains or contamination. The reason, but the same can be solved.

由於可抑制顆粒產生,故具有磁記錄膜之不良率減少、減低成本之重大效果,對提高磁性薄膜之品質及生產效率方面有極大貢獻,適用於作為磁記錄媒體之磁性體薄膜(特別是硬碟驅動記錄層)之成膜時所使用的強磁性材濺鍍靶。 Since it can suppress the generation of particles, it has a significant effect of reducing the defect rate of the magnetic recording film and reducing the cost, and greatly contributes to improving the quality and production efficiency of the magnetic film, and is suitable for a magnetic film (especially hard) as a magnetic recording medium. A strong magnetic material sputtering target used for film formation of a disk drive recording layer).

Claims (18)

一種燒結體,其係由至少含有鈷作為金屬且選自硼及/或鉑族元素中之一種以上的金屬或合金與氧化物構成,其特徵在於:於由該氧化物構成之相存在Cr(BO3)、Co2B2O5、Co3B2O6中之至少一種以上。 A sintered body comprising at least one metal or alloy selected from the group consisting of boron and/or a platinum group element and an oxide, and characterized in that Cr is present in a phase composed of the oxide ( At least one of BO 3 ), Co 2 B 2 O 5 and Co 3 B 2 O 6 . 一種燒結體,其係由至少含有鈷作為金屬且選自鉻與硼及/或鉑族元素中之一種以上的金屬或合金和氧化物構成,其特徵在於:於由該氧化物構成之相存在Cr(BO3)、Co2B2O5、Co3B2O6中之至少一種以上。 A sintered body composed of a metal or an alloy and an oxide containing at least one of chromium and a boron and/or a platinum group element, and characterized in that a phase composed of the oxide exists At least one of Cr(BO 3 ), Co 2 B 2 O 5 and Co 3 B 2 O 6 . 如申請專利範圍第1或2項之燒結體,其中,燒結體與水接觸或浸漬於水中時,燒結體表面不會變色。 A sintered body according to claim 1 or 2, wherein the surface of the sintered body does not discolor when the sintered body is in contact with water or immersed in water. 如申請專利範圍第2或3項之燒結體,其中,鉻與硼之原子比為Cr/B≧1。 The sintered body of claim 2, wherein the atomic ratio of chromium to boron is Cr/B≧1. 如申請專利範圍第1至4項中任一項之燒結體,其中,硼與氧之原子比為B/O≦0.5。 The sintered body according to any one of claims 1 to 4, wherein the atomic ratio of boron to oxygen is B/O ≦ 0.5. 如申請專利範圍第1至5項中任一項之燒結體,其中,於金屬成分之比率中,鉻含量為0~50mol%、硼及/或鉑族元素之含量為0(唯,不包括0)~40mol%,剩餘部份為鈷。 The sintered body according to any one of claims 1 to 5, wherein, in the ratio of the metal component, the chromium content is 0 to 50 mol%, and the boron and/or platinum group element content is 0 (only, excluding 0) ~ 40mol%, the remainder is cobalt. 如申請專利範圍第1至6項中任一項之燒結體,其中,氧化硼之含量以B2O3換算為0.5~10mol%。 The sintered body according to any one of claims 1 to 6, wherein the content of boron oxide is 0.5 to 10 mol% in terms of B 2 O 3 . 如申請專利範圍第1至7項中任一項之燒結體,其中,氧化鉻之合計含量以Cr2O3換算為0.5~10mol%。 The sintered body according to any one of claims 1 to 7, wherein the total content of chromium oxide is 0.5 to 10 mol% in terms of Cr 2 O 3 . 如申請專利範圍第1至8項中任一項之燒結體,其進一步含有以選自Al、Co、Cu、Fe、Ga、Ge、Hf、Li、Mg、Mn、Mo、Nb、Ni、Sb、Si、Sn、Ta、Te、Ti、V、W、Y、Zn或Zr中之一種以上元素作為構成成分的氧化物,總氧化物量以氧換算為2~8wt%。 The sintered body according to any one of claims 1 to 8, further comprising a member selected from the group consisting of Al, Co, Cu, Fe, Ga, Ge, Hf, Li, Mg, Mn, Mo, Nb, Ni, Sb An oxide of one or more of Si, Sn, Ta, Te, Ti, V, W, Y, Zn or Zr as a constituent component, and the total amount of oxide is 2 to 8 wt% in terms of oxygen. 如申請專利範圍第1至9項中任一項之燒結體,其中,燒結體中之 氧化物每一粒子的平均面積在2μm2以下。 The sintered body according to any one of claims 1 to 9, wherein an average area of each of the oxides in the sintered body is 2 μm 2 or less. 如申請專利範圍第1至10項中任一項之燒結體,其進一步含有0.5mol%以上且10mol%以下之選自Ti、V、Mn、Zr、Nb、Mo、Ta、W中之一種元素以上。 The sintered body according to any one of claims 1 to 10, further comprising 0.5 mol% or more and 10 mol% or less of one element selected from the group consisting of Ti, V, Mn, Zr, Nb, Mo, Ta, and W the above. 如申請專利範圍第1至11項中任一項之燒結體,其進一步含有選自碳、氮化物、碳化物中之一種以上。 The sintered body according to any one of claims 1 to 11, further comprising one or more selected from the group consisting of carbon, nitride, and carbide. 如申請專利範圍第1至12項中任一項之燒結體,其相對密度在95%以上。 The sintered body according to any one of claims 1 to 12, which has a relative density of 95% or more. 一種磁記錄膜形成用濺鍍靶,係由申請專利範圍第1至13項中任一項之燒結體構成。 A sputtering target for forming a magnetic recording film, which is composed of the sintered body of any one of the above claims. 一種燒結體之製造方法,其係將至少含有鈷作為金屬且選自硼及/或鉑族元素中之一種以上的金屬或合金與Cr(BO3)、Co2B2O5、Co3B2O6中之至少一種以上氧化物混合並進行燒結。 A method for producing a sintered body, which comprises at least one metal or alloy selected from the group consisting of boron and/or a platinum group element, and Cr(BO 3 ), Co 2 B 2 O 5 , Co 3 B At least one or more of the oxides of 2 O 6 are mixed and sintered. 一種燒結體之製造方法,其係將至少含有鈷作為金屬且選自鉻與硼及/或鉑族元素中之一種以上的金屬或合金和Cr(BO3)、Co2B2O5、Co3B2O6中之至少一種以上氧化物混合並進行燒結。 A method for producing a sintered body, which comprises at least one metal or alloy selected from the group consisting of chromium and boron and/or a platinum group element, and Cr(BO 3 ), Co 2 B 2 O 5 , Co At least one or more of the 3 B 2 O 6 oxides are mixed and sintered. 如申請專利範圍第15或16項之燒結體之製造方法,其係準備氧化硼與氧化鉻及/或氧化鈷,於大氣中將其燒成,從而製造Cr(BO3)、Co2B2O5、Co3B2O6中之至少一種以上氧化物。 The method for producing a sintered body according to claim 15 or 16, wherein the boron oxide, the chromium oxide and/or the cobalt oxide are prepared and fired in the atmosphere to produce Cr(BO 3 ), Co 2 B 2 . At least one or more oxides of O 5 and Co 3 B 2 O 6 . 一種燒結體之製造方法,其係藉由申請專利範圍第15至17項中任一項之燒結體之製造方法來製造申請專利範圍第1至13項中任一項之燒結體。 A method of producing a sintered body, which is produced by the method of producing a sintered body according to any one of claims 15 to 17, wherein the sintered body according to any one of claims 1 to 13 is produced.
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