TW201507856A - Transfer film, crosslinked transfer film and substrate having relief structure - Google Patents

Transfer film, crosslinked transfer film and substrate having relief structure Download PDF

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Publication number
TW201507856A
TW201507856A TW103112325A TW103112325A TW201507856A TW 201507856 A TW201507856 A TW 201507856A TW 103112325 A TW103112325 A TW 103112325A TW 103112325 A TW103112325 A TW 103112325A TW 201507856 A TW201507856 A TW 201507856A
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Taiwan
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substrate
transfer layer
film
transfer
shape
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TW103112325A
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Chinese (zh)
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Emi Yamada
Shotaro Tanaka
Motoyuki Suzuki
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Toray Industries
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form
    • B32B3/26Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/30Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/16Layered products comprising a layer of synthetic resin specially treated, e.g. irradiated
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/18Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/12Photovoltaic modules

Abstract

A transfer film is provided, including a support film having a relief shape on a surface and a transfer layer including a siloxane composition. The siloxane composition includes a photoacid generator or a photobase generator. This invention provides a transfer film or a cross-linked transfer film for easily forming a siloxane layer having a relief shape that does not easily collapse on the surface on a substrate having a large area. Further, this invention provides a substrate having a relief structure and having a cross-linked transfer layer.

Description

轉印膜以及具凹凸構造的基板 Transfer film and substrate having a concave-convex structure

本發明是有關於一種用以在大面積的基板上形成表面具有凹凸形狀的矽氧烷層的轉印膜以及表面形成有凹凸形狀的具凹凸構造的基板。 The present invention relates to a transfer film for forming a siloxane layer having a concavo-convex shape on a large-area substrate, and a substrate having a concavo-convex structure in which a concavo-convex shape is formed on the surface.

作為發光二極體(Light Emitting Diode,LED)或太陽電池基板及液晶顯示裝置等的基板,使用各種半導體基板、玻璃基板及金屬基板等各種基板。近年來,為了提高基板、或使用基板而得的製品的功能,而要求進行用以對基板表面賦予抗靜電、抗反射、防污、光散射等的功能的圖案加工。 Various substrates such as a semiconductor substrate, a glass substrate, and a metal substrate are used as a substrate such as a light emitting diode (LED), a solar cell substrate, and a liquid crystal display device. In recent years, in order to improve the function of a substrate or a product obtained by using a substrate, pattern processing for imparting antistatic, antireflection, antifouling, light scattering, and the like to the surface of the substrate is required.

基板表面的圖案加工藉由微影(lithography)法、或壓印(imprint)法而廣泛地實施。微影法是對塗佈於基板上的感光性樹脂經由罩幕照射光,然後進行顯影,藉此在基板的表面形成目標形狀的技術,是在半導體製造步驟中非常重要的技術。另一方面,壓印法是藉由將具有目標形狀的反轉形狀的模具擠壓於被加工體上,而對表面賦予形狀的方法。具體而言,藉由在基板上塗佈紫外線硬化樹脂或熱塑性樹脂,並將模具擠壓於該樹脂而賦予形狀。在使用紫外線硬化樹脂時,在按壓模具的狀態下進行紫 外線照射使樹脂硬化後,將模具剝離而獲得目標形狀。在使用熱塑性樹脂時,將塗佈於基板上的熱塑性樹脂加熱至熱塑性樹脂的玻璃轉移溫度以上,並將經加熱的模具按壓於該樹脂,然後冷卻至小於玻璃轉移溫度後,將模具剝離而獲得目標形狀。壓印法由於是模具的擠壓的可藉由非常簡易的步驟而圖案化的方法,因此廣泛地研究推廣。另外,藉由該些方法而得的圖案是包含有機物者,因此在要求利用無機材料形成圖案時,亦存在將藉由該些方法而得的圖案作為抗蝕劑,而將基板本身蝕刻的情況。 The patterning of the surface of the substrate is widely performed by a lithography method or an imprint method. The lithography method is a technique in which a photosensitive resin coated on a substrate is irradiated with light through a mask and then developed to form a target shape on the surface of the substrate, which is a very important technique in the semiconductor manufacturing step. On the other hand, the imprint method is a method of imparting a shape to a surface by pressing a mold having a reverse shape of a target shape onto a workpiece. Specifically, the shape is imparted by applying an ultraviolet curable resin or a thermoplastic resin to the substrate and pressing the mold against the resin. When using an ultraviolet curing resin, the purple is pressed while the mold is pressed. After the external line irradiation hardens the resin, the mold is peeled off to obtain a target shape. When a thermoplastic resin is used, the thermoplastic resin coated on the substrate is heated to a temperature higher than the glass transition temperature of the thermoplastic resin, and the heated mold is pressed against the resin, and then cooled to a temperature lower than the glass transition temperature, and the mold is peeled off to obtain Target shape. The imprint method is widely studied and popularized because it is a method in which the extrusion of the mold can be patterned by a very simple procedure. Further, since the pattern obtained by the above methods is an organic substance, when a pattern is required to be formed by using an inorganic material, there is a case where the pattern obtained by the methods is used as a resist, and the substrate itself is etched. .

另一方面,藉由表面的圖案加工而形成的功能層,根據 使用基板的步驟或用途,而要求非常高的耐熱性或透光性。例如在用於製造LED的藍寶石基板時,需要在基板上使作為發光層的氮化鎵(GaN)層進行磊晶成長,並在該步驟中將基板暴露於超過1,000℃的高溫下。另外,在用於LED或太陽電池等用途時,在使用中,因所發出的光而變為非常高的溫度,或在室外的環境下放置於暴露在太陽光的嚴酷環境下,另一方面,要求高的透光性。 On the other hand, the functional layer formed by the pattern processing of the surface is The step or use of the substrate requires very high heat resistance or light transmission. For example, in the sapphire substrate for manufacturing an LED, it is necessary to epitaxially grow a gallium nitride (GaN) layer as a light-emitting layer on the substrate, and expose the substrate to a high temperature exceeding 1,000 ° C in this step. In addition, when used in applications such as LEDs or solar cells, it is used in a very high temperature due to the emitted light, or placed in an outdoor environment exposed to the harsh environment of sunlight. , requires high light transmission.

作為滿足該些要求的材料之一,受到關注的是矽氧烷材料。矽氧烷是與玻璃類似的材料,其特徵在於矽與氧的鍵結連續、且不具有結晶結構,與有機樹脂比較,難以引起高溫下的分解或黃變。而且,矽氧烷材料可藉由所謂的溶膠凝膠法製造,上述溶膠凝膠法是以數百度的高溫對包含矽烷氧化物的溶液進行加熱。在使用溶膠凝膠法製造矽氧烷材料時,可藉由在將矽烷氧化物溶液流入模具後進行硬化而轉變為矽氧烷,因此可使用耐熱性高的 材料,以相對較低的能量簡便地形成圖案。至今為止報告有藉由以下方法形成矽氧烷的凹凸形狀層的例子,上述方法是:將包含矽烷氧化物的溶液塗佈於基板上,按壓模具進行固化的方法(專利文獻1);使用具有賦予了紫外線硬化性的矽氧烷結構的樹脂,藉由抗蝕劑形成圖案的方法(專利文獻2)。 As one of the materials satisfying these requirements, a material of interest is a siloxane. The decane is a material similar to glass, characterized in that ruthenium and oxygen are bonded continuously and have no crystal structure, and it is difficult to cause decomposition or yellowing at a high temperature as compared with an organic resin. Further, the siloxane raw material can be produced by a so-called sol-gel method in which a solution containing a decane oxide is heated at a high temperature of several hundred degrees. When a decyl oxide material is produced by a sol-gel method, it can be converted into a decane by hardening after flowing a decane oxide solution into a mold, so that heat resistance can be used. The material is simply patterned with relatively low energy. Heretofore, there has been reported an example in which a concavo-convex layer of a decane is formed by applying a solution containing a decane oxide onto a substrate and pressing the mold to cure it (Patent Document 1); A method of forming a pattern by a resist by imparting a resin having a UV curable naphthene structure (Patent Document 2).

[現有技術文獻] [Prior Art Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開平11-314927號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 11-314927

[專利文獻2]日本專利特開2006-154037號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2006-154037

溶膠凝膠法是如下的方法:將具有矽烷醇基的烷氧基矽烷、或將該些脫水聚縮合而得的矽氧烷寡聚物/聚合物加熱而除去溶劑,繼而藉由與矽原子直接鍵結的羥基或烷氧基的脫水縮合或脫醇縮合,進行交聯而獲得矽氧烷。為了藉由該方法獲得具有高的耐熱性或耐光性的材料,重要的是儘可能進行交聯反應,而形成大量的矽氧烷鍵。然而存在以下課題:為了充分地進行交聯反應,若將賦形了凹凸形狀的矽氧烷層加熱至數百度,則未交聯狀態的矽氧烷材料的黏度降低,而矽氧烷層的表面形狀崩解。 The sol-gel method is a method in which an alkoxysilane having a stanol group or a polyoxyalkylene oligomer/polymer obtained by polycondensing the dehydration is heated to remove a solvent, followed by a ruthenium atom. The dehydration condensation or dealcoholization condensation of the directly bonded hydroxyl group or alkoxy group is carried out by crosslinking to obtain a decane. In order to obtain a material having high heat resistance or light resistance by this method, it is important to carry out a crosslinking reaction as much as possible to form a large amount of a decane bond. However, in order to sufficiently carry out the crosslinking reaction, when the siloxane layer having the uneven shape is heated to several hundred degrees, the viscosity of the uncrosslinked siloxane material is lowered, and the siloxane layer is oxidized. The surface shape disintegrates.

本發明的目的是鑒於該些問題點,而提供一種用以將矽氧烷層簡便地形成於基板上的轉印膜,上述矽氧烷層即便在高溫下加熱亦可保持對表面賦形的形狀。 SUMMARY OF THE INVENTION An object of the present invention is to provide a transfer film for simply forming a layer of a siloxane layer on a substrate, which is capable of maintaining a surface shape even when heated at a high temperature in view of such problems. shape.

達成上述目的的本發明的轉印膜是將包含矽氧烷組成物的轉印層積層於表面具有凹凸形狀的支撐體膜上而成者,該矽氧烷組成物包含光酸產生劑或光鹼產生劑。 The transfer film of the present invention which achieves the above object is obtained by laminating a transfer layer comprising a siloxane composition on a support film having a concavo-convex shape on its surface, the oxoxane composition comprising a photoacid generator or light Alkali generator.

根據本發明,可簡便地在基板表面形成耐熱性或耐光性優異、具有凹凸形狀、包含矽氧烷組成物的轉印層。 According to the present invention, it is possible to easily form a transfer layer which is excellent in heat resistance and light resistance, has an uneven shape, and contains a siloxane composition on the surface of the substrate.

1‧‧‧支撐體膜 1‧‧‧Supporting body membrane

2‧‧‧轉印層 2‧‧‧Transfer layer

3‧‧‧凹凸形狀的間距 3‧‧‧ spacing of concave and convex shapes

4‧‧‧凹凸形狀的凹部分的寬度 4‧‧‧Width of the concave portion of the concave-convex shape

5‧‧‧凹凸形狀的凹部分的深度 5‧‧‧Deep depth of the concave part of the concave and convex shape

6‧‧‧支撐體膜厚度 6‧‧‧Support film thickness

7‧‧‧轉印層厚度 7‧‧‧Transfer layer thickness

8‧‧‧殘膜厚度 8‧‧‧ residual film thickness

9‧‧‧基板 9‧‧‧Substrate

10‧‧‧凹凸寬度 10‧‧‧ Bump width

11‧‧‧凹凸高度 11‧‧‧ bump height

12‧‧‧轉印膜的FT-IR光譜 FT-IR spectroscopy of transfer film

13‧‧‧交聯轉印膜的FT-IR光譜 13‧‧‧FT-IR Spectra of Crosslinked Transfer Film

14‧‧‧轉印膜的表示矽氧烷鍵的峰值的低波數端極小值 14‧‧‧The minimum value of the low-wavenumber end of the peak of the transfer film indicating the peak of the oxime bond

15‧‧‧轉印膜的表示矽氧烷鍵的峰值的高波數端極小值 15‧‧‧The minimum value of the high wavenumber end of the peak of the transfer film indicating the value of the siloxane key

圖1(a)是包含具有規則的凹凸形狀的支撐體膜的轉印膜的剖面概略圖。圖1(b)是包含具有隨機的凹凸形狀的支撐體膜的轉印膜的剖面概略圖。圖1(c)是包含具有凹凸形狀的支撐體膜的轉印膜的剖面概略圖,上述凹凸形狀在凹凸形狀的凸部及凹部具有平坦區域。圖1(d)是包含具有球狀凹凸形狀的支撐體膜的轉印膜的剖面概略圖。 Fig. 1(a) is a schematic cross-sectional view showing a transfer film including a support film having a regular uneven shape. Fig. 1(b) is a schematic cross-sectional view showing a transfer film including a support film having a random uneven shape. Fig. 1 (c) is a schematic cross-sectional view of a transfer film including a support film having a concavo-convex shape, and the concavo-convex shape has a flat region in a convex portion and a concave portion of the concavo-convex shape. Fig. 1 (d) is a schematic cross-sectional view of a transfer film including a support film having a spherical uneven shape.

圖2(a)是具有規則的形狀的具凹凸構造的基板的剖面概略圖。圖2(b)是具有隨機的凹凸形狀的具凹凸構造的基板的剖面概略圖。圖2(c)是在凹凸形狀的凸部及凹部具有平坦區域的具凹凸構造的基板的剖面概略圖。圖2(d)是具有球狀凹凸形狀的具凹凸構造的基板的剖面概略圖。 Fig. 2 (a) is a schematic cross-sectional view of a substrate having a concavo-convex structure having a regular shape. Fig. 2(b) is a schematic cross-sectional view of a substrate having a concavo-convex structure having a random concavo-convex shape. 2(c) is a schematic cross-sectional view of a substrate having a concavo-convex structure in which a convex portion and a concave portion of the uneven shape have flat regions. Fig. 2 (d) is a schematic cross-sectional view of a substrate having a concave-convex structure having a spherical uneven shape.

圖3是用以算出P1/P2的傅立葉轉換紅外線(Fourier Transform Infrared,FT-IR)光譜。 3 is a Fourier Transform Infrared (FT-IR) spectrum for calculating P1/P2.

以下,一邊參照圖式等,一般對本發明的轉印膜進行更詳細地說明。 Hereinafter, the transfer film of the present invention will be generally described in more detail with reference to the drawings and the like.

本發明的轉印膜如圖1(a)~圖1(d)所示般包括:表面具有凹凸形狀的支撐體膜1、及轉印層2,上述轉印層2積層於該支撐體膜的具有凹凸形狀的表面上、且包含矽氧烷組成物。以該轉印膜的轉印層2側與基板接觸的方式,藉由轉印膜被覆基板後,自轉印膜僅除去支撐體膜,藉此如圖2(a)~圖2(d)所示般可獲得藉由轉印層2被覆基板9的表面的積層體。轉印層2的表面具有凹凸形狀,所述凹凸形狀為支撐體膜1的凹凸形狀的反轉形狀,因此可獲得表面具有凹凸形狀的具凹凸構造的基板。如此可在大面積的基板的表面簡便地形成凹凸形狀。 As shown in Figs. 1(a) to 1(d), the transfer film of the present invention includes a support film 1 having a concave-convex shape on its surface, and a transfer layer 2, and the transfer layer 2 is laminated on the support film. The surface having the uneven shape includes a siloxane composition. After the substrate on the transfer layer 2 side of the transfer film is in contact with the substrate, the substrate is covered by the transfer film, and only the support film is removed from the transfer film, thereby being as shown in FIGS. 2(a) to 2(d). A laminate in which the surface of the substrate 9 is covered by the transfer layer 2 is generally obtained. The surface of the transfer layer 2 has a concavo-convex shape which is an inverted shape of the concavo-convex shape of the support film 1, and thus a substrate having a concavo-convex structure having a concavo-convex shape on the surface can be obtained. In this way, the uneven shape can be easily formed on the surface of the large-area substrate.

[支撐體膜的表面凹凸形狀] [Surface and convex shape of the support film]

支撐體膜的表面凹凸形狀可為幾何學形狀,亦可為隨機形狀。作為表面凹凸形狀,例如可列舉:稜鏡形狀、繞射格子、蛾眼(Moth Eye)形狀、多角柱形狀、多角錘形狀、圓柱形狀、圓錐形狀、半球狀、多角錘梯形狀、圓錐梯形狀、及其反轉形狀等,但並無限定。 The surface uneven shape of the support film may be a geometric shape or a random shape. Examples of the surface uneven shape include a 稜鏡 shape, a diffraction lattice, a Moth Eye shape, a polygonal column shape, a polygonal hammer shape, a cylindrical shape, a conical shape, a hemispherical shape, a polygonal hammer ladder shape, and a conical ladder shape. , and its reverse shape, etc., but there is no limit.

圖1(a)~圖1(d)表示本發明的轉印膜的例子。圖1(a)是包含具有規則的凹凸形狀的支撐體膜的轉印膜的例子。圖1(b)是包含具有隨機的凹凸形狀的支撐體膜的轉印膜的例子。圖1(c)是包含具有凹凸形狀的支撐體膜的轉印膜的例子,上述 凹凸形狀在凹凸形狀的凸部及凹部具有平坦區域。圖1(d)是包含具有球狀凹凸形狀的支撐體膜的轉印膜的例子。將圖1(a)~圖1(d)的轉印膜積層於基板,而將轉印層轉印至基板,藉此可獲得圖2(a)~圖2(d)所示的具凹凸構造的基板。 1(a) to 1(d) show an example of a transfer film of the present invention. Fig. 1(a) is an example of a transfer film containing a support film having a regular uneven shape. Fig. 1(b) is an example of a transfer film containing a support film having a random uneven shape. Fig. 1 (c) is an example of a transfer film including a support film having a concavo-convex shape, The uneven shape has a flat region in the convex portion and the concave portion of the uneven shape. Fig. 1(d) is an example of a transfer film including a support film having a spherical uneven shape. The transfer film of FIGS. 1( a ) to 1 ( d ) is laminated on a substrate, and the transfer layer is transferred to the substrate, whereby the unevenness shown in FIGS. 2( a ) to 2 ( d ) can be obtained. Constructed substrate.

支撐體膜的表面凹凸形狀的代表間距較佳為0.01μm~ 50μm,更佳為0.05μm~30μm,尤佳為0.1μm~20μm。所謂代表間距,在凹凸形狀為幾何學形狀時,是指重複的形狀的間距,在凹凸形狀為隨機形狀時,是指任意選擇的10點的間距的平均值。另外,所謂間距,如圖1(a)~圖1(d)所示般,是表示轉印層中所鄰接的2個凹部的各自最大的深度的點之間的水平距離3。另外,在凹形狀的底部如圖1(c)般為平坦、或如圖1(d)般為曲線時,將其中心點間的水平距離3設為間距。在代表間距小於0.01μm時,存在以下情況:由於界面的表面積變大而難以將轉印層與支撐體膜剝離,或由於容易咬入異物而無法獲得目標形狀。另一方面,在代表間距大於50μm時,存在以下情況:由於凹凸形狀的密度低而無法表現出功能。 The representative pitch of the surface uneven shape of the support film is preferably 0.01 μm. 50 μm, more preferably 0.05 μm to 30 μm, and particularly preferably 0.1 μm to 20 μm. The representative pitch refers to the pitch of the repeated shapes when the uneven shape is a geometric shape, and refers to the average value of the arbitrarily selected 10 points when the uneven shape is a random shape. Further, the pitch is a horizontal distance 3 between the points of the maximum depth of the two concave portions adjacent to each other in the transfer layer as shown in Figs. 1(a) to 1(d). Further, when the bottom of the concave shape is flat as shown in Fig. 1(c) or curved as shown in Fig. 1(d), the horizontal distance 3 between the center points is set as the pitch. When the representative pitch is less than 0.01 μm, there is a case where it is difficult to peel the transfer layer from the support film due to the surface area of the interface, or the target shape cannot be obtained because the foreign matter is easily bitten. On the other hand, when the representative pitch is more than 50 μm, there is a case where the function cannot be exhibited due to the low density of the uneven shape.

支撐體膜的凹凸形狀的縱橫比較佳為0.01~3,更佳為0.05~2,尤佳為0.3~2,特佳為0.5~1。所謂縱橫比,若使用圖1(a)~圖1(d)進行說明,則是將凹部的深度5除以支撐體膜的凹部的寬度4而得的值。在凹形狀的底部如圖1(c)般為平坦、或如圖1(d)般為曲線時,凹部的寬度4取其凹部中的最大距離。凹部的深度5是支撐體膜的凹部的極小位置與其鄰接的極大位置 的垂直距離。在凹部的相鄰的極大位置的高度各不相同時,將更高側的極大位置與凹部所成的垂直距離設為凹部的深度。另外,在支撐體膜的凹凸形狀的縱橫比不固定時,取任意選擇的10點的凹凸形狀的縱橫比的平均值作為縱橫比的值。在凹凸形狀的縱橫比小於0.01時,有凹凸形狀非常低,而難以獲得形狀的效果的情況。另一方面,在縱橫比大於3時,存在以下情況:支撐體膜與轉印層的脫模性降低,而在轉印時形狀撕破、或破壞而難以形成正確的形狀。 The aspect ratio of the concavo-convex shape of the support film is preferably from 0.01 to 3, more preferably from 0.05 to 2, still more preferably from 0.3 to 2, and particularly preferably from 0.5 to 1. When the aspect ratio is described with reference to FIGS. 1( a ) to 1 ( d ), the depth 5 of the concave portion is divided by the width 4 of the concave portion of the support film. When the bottom of the concave shape is flat as shown in Fig. 1(c) or curved as shown in Fig. 1(d), the width 4 of the concave portion takes the maximum distance in the concave portion. The depth 5 of the recess is the extremely small position of the concave portion of the support film and the maximum position adjacent thereto The vertical distance. When the heights of the adjacent maximum positions of the concave portions are different, the vertical distance between the maximum position on the higher side and the concave portion is defined as the depth of the concave portion. In addition, when the aspect ratio of the uneven shape of the support film is not fixed, the average value of the aspect ratio of the arbitrarily selected ten-point uneven shape is taken as the value of the aspect ratio. When the aspect ratio of the uneven shape is less than 0.01, the uneven shape is extremely low, and it is difficult to obtain the effect of the shape. On the other hand, when the aspect ratio is more than 3, there is a case where the mold release property of the support film and the transfer layer is lowered, and the shape is torn or broken during transfer, and it is difficult to form a correct shape.

支撐體膜的代表間距及縱橫比可藉由掃描型電子顯微 鏡進行觀察而測量。在藉由掃描型電子顯微鏡觀察時,在表面的凹凸形狀成線狀配置時,藉由切片機(microtome)朝著與線的延長方向垂直的方向切割並觀察剖面。在表面的凹凸形狀離散地配置時,藉由切片機以通過離散凹凸形狀的中心位置的方式切割,並觀察剖面。另外,轉印至基板上的轉印層表面變為支撐體膜的凹凸形狀的反轉形狀,因此可觀察轉印後的轉印層表面的凹凸構造。轉印層表面的凹凸構造可使用雷射顯微鏡、原子力顯微鏡(Atomic Force Microscope,AFM)等,以後述方式進行觀察。 Scanning electron microscopy The mirror is observed and measured. When observed by a scanning electron microscope, when the uneven shape of the surface is arranged in a line, the microtome is cut in a direction perpendicular to the direction in which the line extends, and the cross section is observed. When the uneven shape of the surface is discretely arranged, the slicer cuts the center position of the discrete uneven shape and observes the cross section. Further, since the surface of the transfer layer transferred onto the substrate becomes an inverted shape of the uneven shape of the support film, the uneven structure on the surface of the transfer layer after transfer can be observed. The uneven structure on the surface of the transfer layer can be observed by a laser microscope, an Atomic Force Microscope (AFM) or the like as described later.

對支撐體膜賦形凹凸形狀的方法並無特別限定,可應 用:熱壓印法、紫外線(ultraviolet,UV)壓印法、塗敷、蝕刻、藉由自組化物的圖案化等已知的方法。 The method for forming the concave-convex shape of the support film is not particularly limited, and Use: hot stamping, ultraviolet (UV) imprinting, coating, etching, patterning by self-assembled compounds, and the like.

[支撐體膜] [support film]

本發明中所用的支撐體膜的厚度較佳為5μm~500μm,更佳 為25μm~300μm,尤佳為40μm~125μm。在厚度比5μm薄時,存在以下的情況:在將轉印層轉印時會扭轉,而無法正確地被覆基板。另一方面,在厚度超過500μm時,存在以下情況:支撐體膜變得剛直,而無法追隨基板的形狀。將包括表面的凹凸形狀的厚度為最大的部分的距離設為支撐體膜的厚度。即,若使用圖1(a)~圖1(d)進行說明,則將支撐體膜的凹凸形狀凸部的極大點、與支撐體膜的相反側的表面的距離6設為支撐體膜的厚度。 The thickness of the support film used in the present invention is preferably from 5 μm to 500 μm, more preferably It is 25 μm to 300 μm, and particularly preferably 40 μm to 125 μm. When the thickness is thinner than 5 μm, there is a case where the transfer layer is twisted when it is transferred, and the substrate cannot be accurately covered. On the other hand, when the thickness exceeds 500 μm, there is a case where the support film becomes rigid and cannot follow the shape of the substrate. The distance including the portion where the thickness of the uneven shape of the surface is the largest is defined as the thickness of the support film. In other words, when the description is made with reference to Fig. 1 (a) to Fig. 1 (d), the maximum point of the convex portion of the uneven shape of the support film and the distance 6 from the surface on the opposite side of the support film are defined as the support film. thickness.

該支撐體膜的材質若為可承受轉印層的溶劑除去、或轉 印至基板時的加熱者,則並無特別限定。例如可使用:聚對苯二甲酸乙二酯、聚2,6-萘二甲酸乙二酯、聚對苯二甲酸丙二酯、聚對苯二甲酸丁二酯、環己烷二甲醇共聚合聚酯、間苯二甲酸共聚合聚酯、螺甘油共聚合聚酯、茀共聚合聚酯等聚酯樹脂;聚乙烯、聚苯乙烯、聚丙烯、聚異丁烯、聚丁烯、聚甲基戊烯、環狀聚烯烴共聚物等聚烯烴樹脂;聚醯胺樹脂、聚醯亞胺樹脂、聚醚樹脂、聚酯醯胺樹脂、聚醚酯樹脂、丙烯酸系樹脂、聚胺基甲酸酯樹脂、聚碳酸酯樹脂、或聚氯乙烯樹脂等。就同時滿足成為轉印層的矽氧烷溶膠的塗敷性、及轉印層與支撐體膜的脫模性的觀點而言,較佳為聚烯烴樹脂或丙烯酸系樹脂。 The material of the support film is a solvent that can withstand the transfer layer, or is transferred. The heating at the time of printing onto the substrate is not particularly limited. For example, polyethylene terephthalate, polyethylene 2,6-naphthalenedicarboxylate, polytrimethylene terephthalate, polybutylene terephthalate, cyclohexanedimethanol copolymerization can be used. Polyester resins such as polyester, isophthalic acid copolymerized polyester, spiroglycerin copolymerized polyester, fluorene copolymerized polyester; polyethylene, polystyrene, polypropylene, polyisobutylene, polybutene, polymethylpentene Polyolefin resin such as olefin, cyclic polyolefin copolymer; polyamide resin, polyimine resin, polyether resin, polyester phthalamide resin, polyether ester resin, acrylic resin, polyurethane resin , polycarbonate resin, or polyvinyl chloride resin. From the viewpoint of satisfying both the coatability of the siloxane sol which is the transfer layer and the release property of the transfer layer and the support film, a polyolefin resin or an acrylic resin is preferable.

另外,支撐體膜可為單層,亦可為包含多層者。在支撐 體膜為包含多層者時,與轉印層接觸的表面較佳為聚烯烴樹脂或丙烯酸系樹脂。 Further, the support film may be a single layer or a multilayer. In support When the body film is a multilayer, the surface in contact with the transfer layer is preferably a polyolefin resin or an acrylic resin.

而且,為了使支撐體膜的表面變為適合的狀態,亦可積 層包含上述以外的樹脂的層。而且,為了對該些支撐體膜的與轉印層接觸的面,賦予塗敷性或脫模性,而可實施塗佈基底調整劑或底塗劑、矽酮系脫模塗佈劑或氟系脫模塗佈劑等的處理,或對其表面進行金或鉑等貴金屬的濺鍍處理。另外,此處所謂的適合的狀態,是指支撐體膜的形成轉印層的表面的表面自由能為23mN/m~70mN/m。以表面自由能進入該範圍的方式調整表面狀態,藉此可防止在支撐體膜上形成轉印層時產生收縮等缺點,並且可使轉印時的支撐體膜與轉印層的脫模性變得良好。 Moreover, in order to make the surface of the support film into a suitable state, it is also possible to accumulate The layer contains a layer of a resin other than the above. Further, in order to impart coating property or mold release property to the surface of the support film which is in contact with the transfer layer, a coating base adjuster or primer, an anthrone-based release coating agent or fluorine may be applied. The treatment is carried out by a release coating agent or the like, or the surface thereof is subjected to a sputtering treatment of a noble metal such as gold or platinum. Further, the term "suitable state" as used herein means that the surface free energy of the surface of the support film on which the transfer layer is formed is 23 mN/m to 70 mN/m. The surface state is adjusted in such a manner that the surface free energy enters the range, whereby defects such as shrinkage when the transfer layer is formed on the support film can be prevented, and the release property of the support film and the transfer layer at the time of transfer can be prevented. Becomes good.

[轉印層材料] [Transfer layer material]

在本發明的轉印膜中,轉印層的特徵在於:包含矽氧烷組成物,並且該矽氧烷組成物包含光酸產生劑或光鹼產生劑。所謂矽氧烷組成物,是包含矽氧烷化合物的組成物,且除了矽氧烷化合物以外亦可包含有機矽烷、或其水解產物。矽氧烷化合物是在結構內包含2個以上連續的矽氧烷鍵的化合物。矽氧烷化合物可為具有與矽原子直接鍵結的有機官能基作為部分結構者,亦可為包含一部分不具有與矽原子直接鍵結的有機官能基的二氧化矽結構者。矽氧烷化合物的重量平均分子量並無特別限制,較佳為藉由凝膠滲透層析法(Gel Permeation Chromatography,GPC)測定的以聚苯乙烯換算計為500~100,000。矽氧烷化合物可藉由利用加熱加壓將矽氧烷溶膠固化而合成,上述矽氧烷溶膠是藉由使下述化學式(1)所示的有機矽烷的1種以上進行水解反應及聚縮合反應而合成。 In the transfer film of the present invention, the transfer layer is characterized by comprising a decane composition, and the siloxane composition comprises a photoacid generator or a photobase generator. The siloxane composition is a composition containing a siloxane compound, and may contain an organic decane or a hydrolysis product thereof in addition to the siloxane compound. The oxoxane compound is a compound containing two or more consecutive siloxane linkages in the structure. The oxoxane compound may be a partial structure having an organic functional group directly bonded to a ruthenium atom, or may be a ruthenium oxide structure containing a part of an organic functional group which does not directly bond with a ruthenium atom. The weight average molecular weight of the siloxane compound is not particularly limited, and is preferably 500 to 100,000 in terms of polystyrene as measured by Gel Permeation Chromatography (GPC). The oxime compound can be synthesized by curing the oxime sol by heat and pressure, and the oxime sol is subjected to a hydrolysis reaction and a polycondensation by one or more kinds of organic decane represented by the following chemical formula (1). Synthesis by reaction.

式中,R1表示氫、碳數1~10的烷基、碳數2~10的烯基及碳數6~15的芳基的任一種,多個R1分別可相同亦可不同。R2表示氫、碳數1~6的烷基、碳數1~6的醯基及碳數6~15的芳基的任一種,多個R2分別可相同亦可不同。n表示0~3的整數。 In the formula, R 1 represents any one of hydrogen, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R 1 's may be the same or different. R 2 represents any one of hydrogen, an alkyl group having 1 to 6 carbon atoms, an indenyl group having 1 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R 2 's may be the same or different. n represents an integer from 0 to 3.

在化學式(1)所示的有機矽烷中,R1的烷基、烯基、芳基均可為未經取代體、取代體的任一種,可根據組成物的特性而選擇。作為烷基的具體例,可列舉:甲基、乙基、正丙基、異丙基、正丁基、第三丁基、正己基、正癸基、三氟甲基、3,3,3-三氟丙基、3-縮水甘油氧基丙基、2-(3,4-環氧環己基)乙基、[(3-乙基-3-氧雜環丁基)甲氧基]丙基、3-胺基丙基、3-巰基丙基、3-異氰酸酯丙基等。作為烯基的具體例,可列舉:乙烯基、3-丙烯醯氧基丙基、3-甲基丙烯醯氧基丙基等。作為芳基的具體例,可列舉:苯基、甲苯基、對羥基苯基、1-(對羥基苯基)乙基、2-(對羥基苯基)乙基、4-羥基-5-(對羥基苯基羰氧基)戊基、萘基等。 In the organodecane represented by the chemical formula (1), the alkyl group, the alkenyl group and the aryl group of R 1 may be either an unsubstituted form or a substituted form, and may be selected depending on the properties of the composition. Specific examples of the alkyl group include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, tert-butyl group, n-hexyl group, n-decyl group, trifluoromethyl group, and 3,3,3. -trifluoropropyl, 3-glycidoxypropyl, 2-(3,4-epoxycyclohexyl)ethyl, [(3-ethyl-3-oxetanyl)methoxy]propane Base, 3-aminopropyl, 3-mercaptopropyl, 3-isocyanatepropyl, and the like. Specific examples of the alkenyl group include a vinyl group, a 3-propenyloxypropyl group, and a 3-methylpropenyloxypropyl group. Specific examples of the aryl group include a phenyl group, a tolyl group, a p-hydroxyphenyl group, a 1-(p-hydroxyphenyl)ethyl group, a 2-(p-hydroxyphenyl)ethyl group, and a 4-hydroxy-5- ( P-Hydroxyphenylcarbonyloxy)pentyl, naphthyl and the like.

在化學式(1)所示的有機矽烷中,R2的烷基、醯基、芳基均可為未經取代體、取代體的任一種,可根據組成物的特性而選擇。作為烷基的具體例,可列舉:甲基、乙基、正丙基、異 丙基、正丁基、正戊基、正己基。作為醯基的具體例,可列舉:乙醯基、丙醯基、丁醯基、戊醯基、己醯基。作為芳基的具體例,可列舉:苯基、萘基等。 In the organodecane represented by the chemical formula (1), the alkyl group, the mercapto group and the aryl group of R 2 may be either an unsubstituted form or a substituted form, and may be selected depending on the properties of the composition. Specific examples of the alkyl group include a methyl group, an ethyl group, a n-propyl group, an isopropyl group, an n-butyl group, a n-pentyl group, and a n-hexyl group. Specific examples of the mercapto group include an ethyl group, a propyl group, a butyl group, a pentamidine group, and a hexyl group. Specific examples of the aryl group include a phenyl group and a naphthyl group.

化學式(1)的n表示0~3的整數。在n=0時為四官能 性矽烷,在n=1時為三官能性矽烷,在n=2時為二官能性矽烷,在n=3時為一官能性矽烷。 n of the chemical formula (1) represents an integer of 0 to 3. Tetrafunctional at n=0 The decane is a trifunctional decane at n = 1, a difunctional decane at n = 2, and a monofunctional decane at n = 3.

作為化學式(1)所示的有機矽烷的具體例,可列舉: 四甲氧基矽烷、四乙氧基矽烷、四丁氧基矽烷、四乙醯氧基矽烷、四苯氧基矽烷等四官能性矽烷;甲基三甲氧基矽烷、甲基三乙氧基矽烷、甲基三異丙氧基矽烷、甲基三正丁氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、乙基三異丙氧基矽烷、乙基三正丁氧基矽烷、正丙基三甲氧基矽烷、正丙基三乙氧基矽烷、正丁基三甲氧基矽烷、正丁基三乙氧基矽烷、正己基三甲氧基矽烷、正己基三乙氧基矽烷、癸基三甲氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三乙氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷、苯基三甲氧基矽烷、苯基三乙氧基矽烷、三氟甲基三甲氧基矽烷、三氟甲基三乙氧基矽烷、3,3,3-三氟丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、3-縮水甘油氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基三乙氧基矽烷、2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-巰基丙基三乙氧基矽烷等三官能性矽烷;二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、 二甲基二乙醯氧基矽烷、二正丁基二甲氧基矽烷、二苯基二甲氧基矽烷、二苯基二乙氧基矽烷、3-縮水甘油氧基丙基甲基二甲氧基矽烷、3-縮水甘油氧基丙基甲基二乙氧基矽烷、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二乙氧基矽烷、N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、3-胺基丙基二乙氧基甲基矽烷等二官能性矽烷;三甲基甲氧基矽烷、三正丁基乙氧基矽烷等一官能性矽烷。 Specific examples of the organic decane represented by the chemical formula (1) include: a tetrafunctional decane such as tetramethoxy decane, tetraethoxy decane, tetrabutoxy decane, tetraethoxy decane or tetraphenoxy decane; methyl trimethoxy decane, methyl triethoxy decane , methyl triisopropoxy decane, methyl tri-n-butoxy decane, ethyl trimethoxy decane, ethyl triethoxy decane, ethyl triisopropoxy decane, ethyl tri-n-butoxy Decane, n-propyltrimethoxydecane, n-propyltriethoxydecane, n-butyltrimethoxydecane, n-butyltriethoxydecane, n-hexyltrimethoxydecane, n-hexyltriethoxydecane , mercaptotrimethoxydecane, vinyltrimethoxydecane, vinyltriethoxydecane, 3-methylpropenyloxypropyltrimethoxydecane, 3-methylpropenyloxypropyltriethyl Oxydecane, 3-propenyloxypropyltrimethoxydecane, phenyltrimethoxydecane, phenyltriethoxydecane, trifluoromethyltrimethoxydecane, trifluoromethyltriethoxydecane , 3,3,3-trifluoropropyltrimethoxydecane, 3-aminopropyltrimethoxydecane, 3-aminopropyltriethoxydecane, 3- Glycidoxypropyltrimethoxydecane, 3-glycidoxypropyltriethoxydecane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, 3-mercaptopropyltri a trifunctional decane such as ethoxy decane; dimethyl dimethoxy decane, dimethyl diethoxy decane, Dimethyldiethoxydecane, di-n-butyldimethoxydecane, diphenyldimethoxydecane, diphenyldiethoxydecane, 3-glycidoxypropylmethyldimethyl Oxydecane, 3-glycidoxypropylmethyldiethoxydecane, 3-methylpropenyloxypropylmethyldimethoxydecane, 3-methylpropenyloxypropylmethyl Diethoxydecane, N-2-(aminoethyl)-3-aminopropylmethyldimethoxydecane, 3-mercaptopropylmethyldimethoxydecane, 3-aminopropyl a difunctional decane such as diethoxymethyl decane; a monofunctional decane such as trimethyl methoxy decane or tri-n-butyl ethoxy decane.

該些有機矽烷可單獨使用,亦可組合2種以上而使用。 為了賦予對防止轉印膜上的龜裂有效的柔軟性,相對於有機矽烷總體,較佳為以矽原子數比計包含5%~100%的具有與矽原子直接鍵結的有機官能基的一官能性矽烷、二官能性矽烷及三官能性矽烷的至少任一種。 These organic decane may be used singly or in combination of two or more. In order to impart flexibility to prevent cracking on the transfer film, it is preferred that the organic decane total contains 5% to 100% of an organic functional group directly bonded to a ruthenium atom in terms of a ruthenium atomic ratio. At least any one of a monofunctional decane, a difunctional decane, and a trifunctional decane.

另一方面,為了提高形成於基板上的凹凸形狀的耐熱 性,相對於有機矽烷總體,較佳為以矽原子數比計包含40%~100%的三官能性矽烷及四官能性矽烷的至少任一種,更佳為包含70%~100%,尤佳為包含90%~100%。 On the other hand, in order to improve the heat resistance of the uneven shape formed on the substrate With respect to the organic decane total, it is preferably at least one of 40% to 100% trifunctional decane and tetrafunctional decane, more preferably 70% to 100%, particularly preferably 矽 atomic ratio. It is 90%~100%.

此處,所謂矽原子數比,若以四官能性矽烷為例進行說 明,則是上述化學式(1)中n=0所示的四官能性矽烷的矽原子數相對於轉印層所含的矽原子數的比率。 Here, the ratio of the atomic number of ruthenium is described by taking tetrafunctional decane as an example. The ratio of the number of ruthenium atoms of the tetrafunctional decane represented by n=0 in the above chemical formula (1) to the number of ruthenium atoms contained in the transfer layer.

化學式(1)所示的有機矽烷的有機官能基數n可藉由 29SiNMR(Nuclear Magnetic Resonance,核磁共振)進行分析。在藉由29SiNMR的測定中,n=0的四官能性矽烷在-90ppm~-120 ppm顯示訊號,n=1的三官能性矽烷在-55ppm~-70ppm顯示訊號,n=2的二官能性矽烷在0ppm~-25ppm顯示訊號,n=3的一官能性矽烷在20ppm~0ppm顯示訊號。將該些各訊號的區域值的全部進行合計,而求出轉印層所含的矽原子數的合計的區域值。藉由將一官能性矽烷、二官能性矽烷、三官能性矽烷及四官能性矽烷各訊號的區域值除以矽原子數的合計的區域值,而獲得各矽原子數比。 The organic functional group number n of the organodecane represented by the chemical formula (1) can be analyzed by 29 Si NMR (Nuclear Magnetic Resonance). In the measurement by 29 Si NMR, the tetrafunctional decane with n=0 showed a signal at -90 ppm to -120 ppm, the trifunctional decane with n=1 showed a signal at -55 ppm to -70 ppm, and the difunctional group with n=2 The tropane displays a signal at 0 ppm to 25 ppm, and the monofunctional decane at n=3 displays a signal at 20 ppm to 0 ppm. The total of the area values of the respective signals is obtained, and the total area value of the number of germanium atoms contained in the transfer layer is obtained. The enthalpy atomic ratio is obtained by dividing the region value of each of the monofunctional decane, the difunctional decane, the trifunctional decane, and the tetrafunctional decane by the total value of the enthalpy atomic number.

另外,為了提高摩擦性或硬度,而可在轉印層中添加二 氧化矽粒子。另外,在轉印層中亦可包含:以提高與支撐體膜的脫模性、或潤濕性為目的的脫模劑,勻平劑,用以提高與樹脂系基板的密接性或耐龜裂性的丙烯酸系樹脂等。 In addition, in order to improve friction or hardness, two layers can be added to the transfer layer. Antimony oxide particles. Further, the transfer layer may further include a release agent for improving the release property or wettability of the support film, and a leveling agent for improving adhesion to the resin substrate or turtle resistance. Cracked acrylic resin, etc.

[光酸產生劑與光鹼產生劑] [Photoacid generator and photobase generator]

構成轉印層的矽氧烷組成物包含:可藉由光照射而產生酸或鹼的光酸產生劑或光鹼產生劑。 The oxoxane composition constituting the transfer layer contains a photoacid generator or a photobase generator which can generate an acid or a base by light irradiation.

矽氧烷組成物藉由如化學式(2)所示的矽氧烷化合物的末端的羥基的脫水縮合而進行交聯反應,並形成網狀結構。 The oxoxane composition is subjected to a crosslinking reaction by dehydration condensation of a hydroxyl group at the terminal of a oxoxane compound represented by the chemical formula (2), and forms a network structure.

[化2] [Chemical 2]

式中,R1表示氫、碳數1~10的烷基、碳數2~10的烯基及碳數6~15的芳基的任一種,多個R1分別可相同亦可不同。R2表示氫、碳數1~6的烷基、碳數1~6的醯基及碳數6~15的芳基的任一種,多個R2分別可相同亦可不同。m表示自然數。 In the formula, R 1 represents any one of hydrogen, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R 1 's may be the same or different. R 2 represents any one of hydrogen, an alkyl group having 1 to 6 carbon atoms, an indenyl group having 1 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R 2 's may be the same or different. m represents a natural number.

在現有技術中,為了使在基板上由矽氧烷組成物形成的凹凸形狀層具有高的耐熱性,而需要使矽氧烷組成物所含的矽氧烷化合物末端的羥基交聯,而增大分子量,從而形成高密度的網狀結構。然而,在進行脫水縮合反應時,在實施熱處理時,存在以下情況:由分子量小的矽氧烷化合物形成的凹凸形狀層,引起黏度降低會快於脫水縮合,而使凹凸形狀變平坦。 In the prior art, in order to make the uneven shape layer formed of the decane composition on the substrate have high heat resistance, it is necessary to crosslink the hydroxyl group at the terminal of the siloxane compound contained in the siloxane composition. Large molecular weight, thereby forming a high density network structure. However, when the dehydration condensation reaction is carried out, when the heat treatment is performed, there is a case where the uneven layer formed of a small molecular weight siloxane compound causes a decrease in viscosity to be faster than dehydration condensation, and the uneven shape is flattened.

為了解決該課題,發明者等人反覆進行銳意研究,結果想到,在凹凸形狀層的熱處理前,在不引起黏度降低的程度的溫度條件下,進行矽氧烷化合物的交聯反應。具體是如下的方法:藉由酸觸媒或鹼觸媒,在非加熱的狀態下促進矽氧烷化合物的脫水縮合反應而形成網狀結構,藉此抑制熱處理時的黏度降低。特別是藉由利用光照射,產生具有觸媒效果的酸或鹼,而可延長用 於在支撐體膜上形成轉印層的矽氧烷溶膠的適用期(pot life)。另外發現,就在矽氧烷溶膠中的溶解性或具有觸媒效果的酸的產生效率的觀點而言,較佳為光酸產生劑,就可進一步加快矽氧烷交聯反應速度的觀點而言,較佳為光鹼產生劑。 In order to solve this problem, the inventors and the like have repeatedly conducted intensive studies, and as a result, it has been considered that the crosslinking reaction of the siloxane compound is carried out under the temperature condition that does not cause a decrease in viscosity before the heat treatment of the uneven layer. Specifically, it is a method of promoting a dehydration condensation reaction of a siloxane compound in a non-heated state by an acid catalyst or an alkali catalyst to form a network structure, thereby suppressing a decrease in viscosity during heat treatment. In particular, by using light irradiation, an acid or a base having a catalytic effect is produced, and the product can be extended. The pot life of the siloxane sol which forms the transfer layer on the support film. Further, it has been found that, from the viewpoint of the solubility in the oxime sol or the production efficiency of the acid having a catalytic effect, it is preferred that the photoacid generator further accelerates the cross-linking reaction rate of the oxirane. In other words, a photobase generator is preferred.

作為光酸產生劑,已知有鋶系光酸產生劑、錪鹽系光酸 產生劑、硒鹽系光酸產生劑、重氮鎓鹽系光酸產生劑、磷酸系光酸產生劑、三嗪系光酸產生劑、苯乙酮衍生物化合物、茂金屬錯合物、鐵芳烴錯合物等。就在溶液中的溶解性與酸成分的產生效率的觀點而言,較佳為鋶系光酸產生劑。作為光酸產生劑的具體例,可列舉:三亞普羅(San-Apro)股份有限公司製造的CPI-100P、CPI-101A、CPI-200K、CPI-210S,和光純藥工業股份有限公司製造的WPAG-336、WPAG-367、WPAG-370、WPAG-469、WPI-113、WPI-116、WPI-124、WPI-170,艾依巴敕(EIWEISS)股份有限公司製造的CTPAG-II、EEPAG,翠化學(Midori Kagaku)股份有限公司製造的PAI-101、DTS-102、DTS-103、DTS-105,艾迪科(ADEKA)股份有限公司製造的SP-170等。 As a photoacid generator, an oxime photoacid generator and a ruthenium salt photoacid are known. Producer, selenium salt photoacid generator, diazonium salt photoacid generator, phosphoric acid photoacid generator, triazine photoacid generator, acetophenone derivative compound, metallocene complex, iron An aromatic hydrocarbon complex or the like. From the viewpoint of solubility in a solution and production efficiency of an acid component, a quinone-based photoacid generator is preferred. Specific examples of the photoacid generator include CPI-100P, CPI-101A, CPI-200K, CPI-210S manufactured by San-Apro Co., Ltd., and WPAG manufactured by Wako Pure Chemical Industries Co., Ltd. -336, WPAG-367, WPAG-370, WPAG-469, WPI-113, WPI-116, WPI-124, WPI-170, CTPAG-II, EEPAG, Cui, manufactured by EIWEISS PAI-101, DTS-102, DTS-103, DTS-105 manufactured by Chemical (Midori Kagaku) Co., Ltd., SP-170 manufactured by ADEKA Co., Ltd., and the like.

另一方面,光鹼產生劑已知大致分為非離子型光鹼產生 劑與離子型光鹼產生劑。就溶液的溶解性、鹼成分的產生效率、及所產生的鹼的強度的觀點而言,較佳為離子型光鹼產生劑、特別是產生pKa8以上的鹼化合物者。作為光鹼產生劑的具體例,可列舉:三亞普羅股份有限公司製造的PBG-SA1、SA-1B,和光純藥工業股份有限公司製造的WPBG-266、WPBG-300、WPBG-082、 WPBG-140,艾依巴敕股份有限公司製造的EIPBG、EITMG等。在光酸產生劑或光鹼產生劑中,就矽氧烷溶膠的適用期的觀點而言,較佳為使酸或鹼的產生得以活化的波長為365nm以下。 On the other hand, photobase generators are known to be roughly classified into nonionic photobase generation. And ionic photobase generator. From the viewpoints of the solubility of the solution, the production efficiency of the alkali component, and the strength of the alkali to be produced, an ionic photobase generator, particularly an alkali compound having a pKa of 8 or more is preferable. Specific examples of the photobase generator include PBG-SA1, SA-1B manufactured by Sanya Proo Co., Ltd., and WPBG-266, WPBG-300, and WPBG-082 manufactured by Wako Pure Chemical Industries Co., Ltd. WPBG-140, EIPBG, EITMG, etc. manufactured by Aiba. In the photoacid generator or the photobase generator, the wavelength at which the production of an acid or a base is activated is preferably 365 nm or less from the viewpoint of the pot life of the oxime sol.

在將轉印層總體設為100質量%時,轉印層所含的光酸產生劑量較佳為0.2質量%~5.0質量%,更佳為0.3質量%~2.5質量%,尤佳為0.4質量%~0.9質量%。在光酸產生劑的含量少於0.2質量%時,存在以下情況:藉由光酸產生劑而產生的酸的量少,難以獲得充分的形狀保持效果。另一方面,在光酸產生劑的含量多於5.0質量%時,存在以下情況:由於因酸產生引起的局部的反應、或光酸產生劑的反應後的殘渣而在轉印層中生成折射率不同的部位而產生白濁,或由於因交聯反應進行引起的黏度上升而勻平性降低,而轉印層容易產生厚度不均或起伏。 When the transfer layer is set to 100% by mass as a whole, the photoacid generating dose contained in the transfer layer is preferably 0.2% by mass to 5.0% by mass, more preferably 0.3% by mass to 2.5% by mass, and particularly preferably 0.4% by mass. %~0.9% by mass. When the content of the photoacid generator is less than 0.2% by mass, there is a case where the amount of the acid generated by the photoacid generator is small, and it is difficult to obtain a sufficient shape retaining effect. On the other hand, when the content of the photoacid generator is more than 5.0% by mass, there is a case where refraction is generated in the transfer layer due to a local reaction due to acid generation or a residue after the reaction of the photoacid generator. The rate is white turbid due to the difference in the portion, or the leveling property is lowered due to the increase in the viscosity due to the crosslinking reaction, and the transfer layer is likely to have uneven thickness or undulation.

在將轉印層總體設為100質量%時,轉印層所含的光鹼產生劑的量較佳為0.05質量%~10質量%,更佳為0.1質量%~5質量%。在光鹼產生劑的含量少於0.05質量%時,存在以下情況:藉由光鹼產生劑而產生的鹼的量少,而難以獲得充分的形狀保持效果。另一方面,在光鹼產生劑的含量多於10質量%時,存在以下情況:光鹼產生劑未完全溶解而無法形成均勻的轉印層,或由於因交聯反應引起的黏度上升而塗液的適用期降低,或因光鹼產生劑的殘渣等而轉印層產生白濁。 When the total amount of the transfer layer is 100% by mass, the amount of the photobase generator contained in the transfer layer is preferably from 0.05% by mass to 10% by mass, more preferably from 0.1% by mass to 5% by mass. When the content of the photobase generator is less than 0.05% by mass, there is a case where the amount of the alkali generated by the photobase generator is small, and it is difficult to obtain a sufficient shape retaining effect. On the other hand, when the content of the photobase generator is more than 10% by mass, there is a case where the photobase generator is not completely dissolved and a uniform transfer layer cannot be formed, or the viscosity is increased due to the crosslinking reaction. The pot life of the liquid is lowered, or the transfer layer is cloudy due to the residue of the photobase generator or the like.

特別是轉印層的厚度不均容易反映為轉印層的殘膜厚度不均。所謂轉印層的殘膜厚度,是轉印層的與基板接觸之側的 表面、和轉印層的與支撐體膜接觸之側的表面之間的厚度的極小值。若使用圖進行說明,則在圖1(a)~圖1(d)中分別由8表示的距離是殘膜厚度。另外,將測量10點殘膜厚度而得的最大值與最小值的差所示的殘膜厚度差除以殘膜厚度的平均值,將算出而得的值、即((測量10點殘膜厚度而得的最大值與最小值的差所示的殘膜厚度差)/(殘膜厚度的平均值))×100設為殘膜厚度不均(%)。 In particular, the thickness unevenness of the transfer layer is easily reflected as uneven thickness of the residual film of the transfer layer. The residual film thickness of the transfer layer is the side of the transfer layer that is in contact with the substrate. A minimum value of the thickness between the surface and the surface of the transfer layer on the side in contact with the support film. As will be described using the drawings, the distance indicated by 8 in each of Figs. 1(a) to 1(d) is the residual film thickness. In addition, the residual film thickness difference indicated by the difference between the maximum value and the minimum value obtained by measuring the residual film thickness of 10 points is divided by the average value of the residual film thickness, and the calculated value is obtained (that is, measuring the 10-point residual film) The residual film thickness difference indicated by the difference between the maximum value and the minimum value of the thickness) / (the average value of the residual film thickness)) × 100 is the residual film thickness unevenness (%).

殘膜厚度不均較佳為小於25%,更佳為小於15%。在殘 膜厚度不均為25%以上時,存在以下情況:在使轉印層與基板接觸而按壓時,成為轉印不均或缺點的產生原因,或在對形成於基板上的凹凸形狀進行蝕刻處理時,形狀尺寸變得不均勻。另外,轉印層的殘膜厚度藉由以下方式測定:藉由切片機切削轉印膜,並藉由掃描型電子顯微鏡對其剖面進行攝影及測量。 The residual film thickness unevenness is preferably less than 25%, more preferably less than 15%. In the When the thickness of the film is not more than 25%, there is a case where the transfer layer is pressed in contact with the substrate, causing unevenness in transfer or a defect, or etching the uneven shape formed on the substrate. When the shape size becomes uneven. Further, the residual film thickness of the transfer layer was measured by cutting a transfer film by a microtome and photographing and measuring the cross section thereof by a scanning electron microscope.

[轉印層的形成] [Formation of transfer layer]

作為在支撐體膜上形成轉印層的方法,將藉由溶劑稀釋的矽氧烷溶膠塗敷在支撐體膜上,並乾燥的方法,由於容易調整膜厚,且難以受到支撐體膜的厚度等的影響,因此較佳。 As a method of forming a transfer layer on a support film, a method in which a solvent-diluted oxime sol is coated on a support film and dried is easy to adjust the film thickness and is difficult to receive the thickness of the support film. The influence of etc. is therefore preferred.

矽氧烷溶膠含有矽氧烷組成物及溶劑。作為溶劑,若具有可獲得適合用於塗敷的濃度的矽氧烷溶膠的溶液的溶解性,則並無特別限定,就膜上難以產生收縮的方面而言,較佳為有機溶劑。例如可列舉:二丙酮醇、3-甲基-3-甲氧基-1-丁醇等高沸點醇類;乙二醇、丙二醇等二醇類;乙二醇單甲醚、乙二醇單甲醚乙 酸酯、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚、丙二醇單乙醚乙酸酯、丙二醇單丙醚、丙二醇單丁醚、二乙醚、二異丙醚、二正丁醚、二苯醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇乙基甲基醚、二丙二醇二甲醚等醚類;甲基乙基酮、甲基異丁基酮、二異丙基酮、二異丁基酮、環戊酮、環己酮、2-庚酮、3-庚酮等酮類;二甲基甲醯胺、二甲基乙醯胺等醯胺類;乙酸乙酯、乙酸丁酯、乙基溶纖劑乙酸酯、3-甲基-3-甲氧基-1-丁醇乙酸酯等酯類;甲苯、二甲苯、己烷、環己烷、均三甲苯、二異丙基苯等芳香族或脂肪族烴;γ-丁內酯、N-甲基-2-吡咯啶酮、二甲基亞碸等。 The decane sol contains a decane composition and a solvent. The solvent is not particularly limited as long as it has a solubility in a solution capable of obtaining a concentration of a siloxane sol which is suitable for coating, and is preferably an organic solvent from the viewpoint that shrinkage is less likely to occur on the film. For example, high boiling point alcohols such as diacetone alcohol and 3-methyl-3-methoxy-1-butanol; glycols such as ethylene glycol and propylene glycol; ethylene glycol monomethyl ether and ethylene glycol single Methyl ether B Acid ester, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether, propylene glycol monobutyl ether, diethyl ether, diisopropyl ether, di-n-butyl ether, Ethers such as diphenyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, dipropylene glycol dimethyl ether; methyl ethyl ketone, methyl isobutyl ketone , ketones such as diisopropyl ketone, diisobutyl ketone, cyclopentanone, cyclohexanone, 2-heptanone, 3-heptanone; guanamine such as dimethylformamide or dimethylacetamide Ethyl acetate, butyl acetate, ethyl cellosolve acetate, 3-methyl-3-methoxy-1-butanol acetate, etc.; toluene, xylene, hexane, ring An aromatic or aliphatic hydrocarbon such as hexane, mesitylene or diisopropylbenzene; γ-butyrolactone, N-methyl-2-pyrrolidone, dimethyl alum, and the like.

就矽氧烷組成物的溶解性、及矽氧烷溶膠的塗佈性的方面而言,較佳為選自二丙酮醇、丙二醇單甲醚、丙二醇單乙醚、丙二醇單丙醚、丙二醇單甲醚乙酸酯、二異丁醚、二正丁醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇乙基甲基醚、二丙二醇二甲醚、甲基異丁基酮、二異丁基酮及乙酸丁酯的溶劑。 It is preferably selected from the group consisting of diacetone alcohol, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, and propylene glycol monomethyl group in terms of solubility of the oxoxane composition and coating property of the oxirane sol. Ether acetate, diisobutyl ether, di-n-butyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, dipropylene glycol dimethyl ether, methyl isobutyl Solvents of ketone, diisobutyl ketone and butyl acetate.

作為塗敷矽氧烷溶膠的方法,例如只要自凹版塗佈(gravure coat)、輥塗、旋塗、模塗、棒塗、網版塗佈(screen coat)、刮刀塗佈(blade coat)、氣刀塗佈、浸塗、噴霧塗佈等適當選擇而應用即可。 As a method of applying the siloxane sol, for example, gravure coating, roll coating, spin coating, die coating, bar coating, screen coating, blade coating, Air knife coating, dip coating, spray coating, and the like may be appropriately selected and applied.

在塗敷後,藉由加熱或減壓將塗敷了矽氧烷溶膠的支撐體膜乾燥。在加熱乾燥時,加熱溫度較佳為20℃以上、180℃以下。在加熱溫度低於20℃時,存在乾燥時需要大量的時間的情況。另 一方面,若加熱至高於180℃的溫度,則存在以下情況:由於利用加熱的矽氧烷的聚合,而喪失轉印膜的柔軟性而產生龜裂,或因支撐體膜與轉印層的熱膨脹係數的差而捲曲,或支撐體膜表面的凹凸形狀崩解。在減壓乾燥時,減壓條件只要在轉印膜的形狀不崩解的範圍內適當設定即可,較佳為減壓至10kPa。而且,在減壓的同時可進行加熱而乾燥。 After coating, the support film coated with the siloxane sol is dried by heating or depressurization. When heating and drying, the heating temperature is preferably 20 ° C or more and 180 ° C or less. When the heating temperature is lower than 20 ° C, there is a case where a large amount of time is required for drying. another On the one hand, if it is heated to a temperature higher than 180 ° C, there is a case where cracking occurs due to loss of flexibility of the transfer film by polymerization of heated siloxane, or due to support film and transfer layer The difference in thermal expansion coefficient is curled, or the uneven shape on the surface of the support film is disintegrated. In the case of drying under reduced pressure, the reduced pressure condition may be appropriately set within a range in which the shape of the transfer film does not disintegrate, and it is preferred to reduce the pressure to 10 kPa. Further, it can be heated and dried while being depressurized.

轉印層的厚度較佳為0.01μm~20μm,更佳為0.03μm ~10μm,尤佳為0.05μm~5μm。在轉印層的厚度比0.01μm薄時,存在以下情況:形成於基板上的凹凸形狀的高度變低,而難以獲得凹凸形狀的效果。另一方面,在轉印層的厚度比20μm厚時,在基板上進行熱處理時,有產生膜應力而引起龜裂的情況。 所謂轉印層的厚度,是將在轉印膜上轉印層最厚的部分與轉印層的最表面之間的距離設為轉印層的厚度7,上述轉印層最厚的部分即若使用圖1(a)~圖1(d)進行說明,則在將支撐體膜的與轉印層相對的面設為下而水平放置時,支撐體膜1上的與轉印層2的邊界的面的凹陷的最下的位置。轉印層的厚度藉由以下方式測定:藉由切片機切削轉印膜,並藉由掃描型電子顯微鏡對其剖面進行攝影及測量。 The thickness of the transfer layer is preferably from 0.01 μm to 20 μm, more preferably 0.03 μm. ~10 μm, particularly preferably 0.05 μm to 5 μm. When the thickness of the transfer layer is thinner than 0.01 μm, there is a case where the height of the uneven shape formed on the substrate becomes low, and it is difficult to obtain the effect of the uneven shape. On the other hand, when the thickness of the transfer layer is thicker than 20 μm, when heat treatment is performed on the substrate, film stress may occur to cause cracking. The thickness of the transfer layer is such that the distance between the thickest portion of the transfer layer on the transfer film and the outermost surface of the transfer layer is the thickness 7 of the transfer layer, and the thickest portion of the transfer layer is 1(a) to 1(d), when the surface of the support film facing the transfer layer is placed horizontally, the transfer film 2 on the support film 1 is transferred. The lowest position of the depression of the face of the boundary. The thickness of the transfer layer was measured by cutting a transfer film by a microtome and photographing and measuring the cross section thereof by a scanning electron microscope.

[轉印方法] [Transfer method]

對使用本發明的轉印膜,將轉印層轉印至基板的方法進行敍述。使本發明的轉印膜的轉印層側的面與基板接觸而獲得積層體,將該積層體加壓及/或加熱後,僅將支撐體膜剝離,藉此可在 基板表面提供具有凹凸形狀的轉印層。將該步驟稱為轉印。 A method of transferring the transfer layer to the substrate using the transfer film of the present invention will be described. The surface on the transfer layer side of the transfer film of the present invention is brought into contact with the substrate to obtain a laminate, and after the laminate is pressurized and/or heated, only the support film is peeled off, whereby The substrate surface provides a transfer layer having a concavo-convex shape. This step is called transfer.

轉印時的加壓例如可列舉:藉由夾輥、或壓製機的加壓 等,但並不限定於該些。對上述積層體加壓的壓力較佳為1kPa~50MPa。若壓力小於1kPa,則在基板與轉印膜之間咬入氣泡等而容易產生轉印缺點。若壓力超過50MPa,則有模具膜的凹凸形狀崩解,或基板破裂的情況。 The pressurization at the time of transfer may, for example, be pressurization by a nip roll or a press. Etc., but not limited to these. The pressure for pressurizing the above laminated body is preferably from 1 kPa to 50 MPa. When the pressure is less than 1 kPa, air bubbles or the like are trapped between the substrate and the transfer film, and transfer defects are likely to occur. When the pressure exceeds 50 MPa, the uneven shape of the mold film may be disintegrated or the substrate may be broken.

另外,在進行加壓時,亦可在上述積層體的支撐體膜與 加壓板或加壓輥等之間使用緩衝材料。藉由使用緩衝材料而不會咬入空氣等,而可精度佳地將轉印層轉印。作為緩衝材料,可使用:氟橡膠、矽橡膠、乙烯丙烯橡膠、異丁烯異戊二烯橡膠、丙烯腈丁二烯橡膠等。另外,為了使基板與轉印層充分地密接,亦可與加壓一起進行加熱。 In addition, when pressurizing, the support film of the above laminated body may be A cushioning material is used between the pressure plate or the pressure roller or the like. The transfer layer can be transferred with high precision by using a cushioning material without biting in air or the like. As the buffer material, fluorine rubber, ruthenium rubber, ethylene propylene rubber, isobutylene isoprene rubber, acrylonitrile butadiene rubber or the like can be used. Further, in order to sufficiently adhere the substrate to the transfer layer, heating may be performed together with the pressurization.

作為使用轉印法,而獲得將表面具有凹凸形狀的交聯轉 印層積層於基板上的具凹凸構造的基板的方法,有以下的方法等:(1)藉由對轉印膜照射光使轉印層交聯而獲得交聯轉印膜後,將該交聯轉印膜積層於基板上,繼而將支撐體膜剝離;(2)將轉印膜積層於基板後,照射光使轉印層交聯,繼而將支撐體膜剝離;(3)將轉印膜積層於基板後,將支撐體膜剝離,藉此獲得包含基板與轉印層的積層體,繼而照射光使轉印層交聯。 As a transfer method, a cross-linking having a concave-convex shape on the surface is obtained. In the method of laminating a substrate having a concavo-convex structure on a substrate, there are the following methods: (1) by crosslinking the transfer layer by irradiating light to the transfer film to obtain a crosslinked transfer film, The transfer film is laminated on the substrate, and then the support film is peeled off; (2) after the transfer film is laminated on the substrate, the light is irradiated to crosslink the transfer layer, and then the support film is peeled off; (3) transfer is performed After the film is laminated on the substrate, the support film is peeled off, whereby a laminate including the substrate and the transfer layer is obtained, and then the light is irradiated to crosslink the transfer layer.

[交聯轉印膜] [Crosslinked transfer film]

在具有凹凸形狀的支撐體膜上形成轉印層後進行光照射,藉此可使矽氧烷組成物所含的光酸產生劑或光鹼產生劑活化而產生 酸或鹼,從而使轉印層所含的矽氧烷化合物交聯。此處,將經交聯的轉印層稱為交聯轉印層。另外,將使轉印層交聯而成的轉印膜稱為交聯轉印膜。 After the transfer layer is formed on the support film having the uneven shape, light irradiation is performed, whereby the photoacid generator or the photobase generator contained in the siloxane composition can be activated to generate An acid or a base to crosslink the oxoxane compound contained in the transfer layer. Here, the crosslinked transfer layer is referred to as a crosslinked transfer layer. Further, a transfer film obtained by crosslinking a transfer layer is referred to as a crosslinked transfer film.

所照射的光的波長為適於所含有的光酸產生劑或光鹼 產生劑的吸收帶的波長範圍,就防止因光酸產生劑或光鹼產生劑的殘渣或吸收帶引起的著色、及矽氧烷溶膠的適用期延長的觀點而言,較佳為365nm以下的波長帶。 The wavelength of the irradiated light is suitable for the photoacid generator or photobase contained therein The wavelength range of the absorption band of the generating agent is preferably 365 nm or less from the viewpoint of preventing coloration due to the residue or absorption band of the photoacid generator or the photobase generator, and prolonging the pot life of the siloxane sol. Wavelength band.

光照射總量較佳為100mJ/cm2~5,000mJ/cm2,更佳為200mJ/cm2~3,000mJ/cm2,尤佳為300mJ/cm2~1,500mJ/cm2。在光照射總量少於100mJ/cm2時,存在以下情況:光酸產生劑或光鹼產生劑不會充分活化,而無法充分進行交聯反應。另一方面,在光照射總量多於5,000mJ/cm2時,有照射花費時間、或支撐體膜劣化的情況。 Light irradiation amount is preferably 100mJ / cm 2 ~ 5,000mJ / cm 2, more preferably 200mJ / cm 2 ~ 3,000mJ / cm 2, particularly preferably 300mJ / cm 2 ~ 1,500mJ / cm 2. When the total amount of light irradiation is less than 100 mJ/cm 2 , there is a case where the photoacid generator or the photobase generator is not sufficiently activated, and the crosslinking reaction cannot be sufficiently performed. On the other hand, when the total amount of light irradiation is more than 5,000 mJ/cm 2 , there is a case where the irradiation takes time or the support film is deteriorated.

[藉由FT-IR的評價] [Evaluation by FT-IR]

本發明的交聯轉印膜是將包含矽氧烷組成物的交聯轉印層積層於具有凹凸形狀的支撐體膜而成者,且其特徵在於:該交聯轉印層的根據FT-IR光譜而得的P1/P2的值為0.12以上。在如圖3所示的交聯轉印膜的FT-IR光譜中,在960cm-1~1,250cm-1觀察到歸因於矽氧烷鍵Si-O-Si的伸縮振動的峰值。將作為該峰值的兩端的960cm-1左右的極小值14與1,250cm-1左右的極小值15連線,並將該線段作為基線,將960cm-1~1,020cm-1之間的峰值面積設為P1,同樣將960cm-1~1,200cm-1之間的峰值面積設為P2。 由於矽氧烷為非晶質物質,因此Si-O-Si的鍵角存在不均。因此,FT-IR光譜中在960cm-1~1,250cm-1左右,與各種鍵角對應的峰值重疊而以寬的波形的形式被觀察到。在重疊的峰值中,靠近960cm-1的低波數的位置,交聯密度高,歸因於接近結晶性的矽氧烷。因此,P1/P2的值表示全部矽氧烷鍵中的交聯密度高者的比例。 The crosslinked transfer film of the present invention is obtained by laminating a crosslinked transfer layer comprising a rhodium oxide composition on a support film having a concavo-convex shape, and is characterized in that the crosslinked transfer layer is based on FT- The value of P1/P2 obtained by IR spectrum is 0.12 or more. In the FT-IR spectrum of the crosslinked transfer film shown in Fig. 3, the peak of the stretching vibration due to the siloxane bond Si-O-Si was observed at 960 cm -1 to 1,250 cm -1 . The minimum value 14 of about 960 cm -1 which is the both ends of the peak is connected to the minimum value 15 of about 1,250 cm -1 , and the line segment is used as a baseline, and the peak area between 960 cm -1 and 1,020 cm -1 is set. For P1, the peak area between 960 cm -1 and 1,200 cm -1 is also set to P2. Since the decane is an amorphous substance, the bond angle of Si-O-Si is uneven. Therefore, in the FT-IR spectrum, the peaks corresponding to various bond angles overlap at about 960 cm -1 to 1,250 cm -1 and are observed as a wide waveform. Among the overlapping peaks, near the position of the low wave number of 960 cm -1 , the crosslinking density is high due to the near-crystalline helium oxide. Therefore, the value of P1/P2 represents the ratio of the high crosslink density in all the decane bonds.

本發明的交聯轉印膜較佳為P1/P2的值為0.12以上。在P1/P2的值小於0.12時,矽氧烷鍵中交聯密度高者所佔的比例低,因此在將轉印該轉印層而得的具有凹凸構造的基板在高溫下進行處理時,會因熱而導致凹凸構造崩解。 The crosslinked transfer film of the present invention preferably has a value of P1/P2 of 0.12 or more. When the value of P1/P2 is less than 0.12, the ratio of the high crosslink density in the decane bond is low. Therefore, when the substrate having the uneven structure obtained by transferring the transfer layer is treated at a high temperature, The uneven structure will collapse due to heat.

算出P1、P2的FT-IR光譜例如可使用日本分光股份有限公司製造的FTIR傅立葉變換紅外分光光度計FT/IR-6100 A型,且使用搭載了Ge製造的稜鏡的衰減全反射(Attenuated Total Reflectance,ATR)反射裝置,在波數範圍為400cm-1~4,000cm-1、分解能為4cm-1、累計次數為128次的條件下測定。使用存在於測定軟體中的解析用程式,解析測定所得的光譜。首先,將所得的光譜進行ATR修正後,進行1次微分而讀取波數,上述波數取作為矽氧烷鍵的峰值的960cm-1左右、1,250cm-1左右的極小值(圖3中14、15)。將所讀取的波數作為基礎計算範圍,以忽視基線之下的形態算出P1、P2各自的面積,繼而算出P1/P2。此時,P1的面積計算範圍設為960cm-1~1,020cm-1、P2的計算範圍設為960cm-1~1,200cm-1For the FT-IR spectrum of P1 and P2, for example, an FTIR Fourier transform infrared spectrophotometer FT/IR-6100 A manufactured by JASCO Corporation can be used, and Attenuated Total (Attenuated Total) equipped with Ge can be used. Reflectance, ATR) reflecting means, in the wave number range of 400cm -1 ~ 4,000cm -1, the decomposition can be measured as the cumulative number of conditions for 128 4cm -1,. The spectrum obtained by the measurement is analyzed using an analysis program existing in the measurement software. First, the resulting spectrum ATR correction is performed once read differentiating the wave number, taken as the peak wave number above silicon siloxane bond around 960cm -1, 1,250cm minimum value (the left and right in FIG. 3 -1 14, 15). Using the number of waves read as the basic calculation range, the area of each of P1 and P2 is calculated by ignoring the form under the baseline, and then P1/P2 is calculated. At this time, the area calculation range of P1 is set to 960 cm -1 to 1,020 cm -1 , and the calculation range of P2 is set to 960 cm -1 to 1,200 cm -1 .

另一方面,在將轉印膜積層於基板後照射光時,使本發 明的轉印膜的轉印層側的面與基板接觸而進行加壓及/或加熱,而獲得基板/轉印層/支撐體膜的積層體,並對該積層體進行光照射,藉此由轉印層所含的光酸產生劑產生酸,或由光鹼產生劑產生鹼,從而進行轉印層的交聯。在進行光照射時,若基板透光,則可自基板及支撐體膜的任一側照射光,亦可自兩面照射光。根據本形態,可在支撐體膜的凹凸形狀內進行藉由光酸產生劑或光鹼產生劑的轉印層的交聯,因此對於凹凸形狀的保持有利。另外,在基板與轉印層之間亦容易促進脫水反應,因此對於基板與轉印層的密接力提高亦有利。另外,由於能以交聯前的狀態保存,因此在轉印膜的壽命延長上亦可期待效果。照射至基板/轉印層/支撐體膜的積層體的光的總量,較佳為200mJ/cm2~10,000mJ/cm2,更佳為300mJ/cm2~8,000mJ/cm2,尤佳為500mJ/cm2~5,000mJ/cm2。在照射總量少於200mJ/cm2時,存在以下情況:在使光酸產生劑或光鹼產生劑活化時,能量不充分而無法充分地活化。 在照射總量多於10,000mJ/cm2時,有活化需要長的時間的情況。 On the other hand, when the transfer film is laminated on the substrate and then irradiated with light, the transfer layer side surface of the transfer film of the present invention is brought into contact with the substrate to be pressurized and/or heated to obtain a substrate/transfer layer. /layering the support film, and irradiating the laminate with light, whereby an acid is generated from the photo-acid generator contained in the transfer layer, or a base is generated by the photobase generator, thereby performing cross-linking of the transfer layer . When light is irradiated, if the substrate is light-transmitted, light can be irradiated from either side of the substrate and the support film, or light can be irradiated from both sides. According to this aspect, crosslinking of the transfer layer by the photoacid generator or the photobase generator can be carried out in the concavo-convex shape of the support film, which is advantageous for the retention of the concavo-convex shape. Further, since the dehydration reaction is easily promoted between the substrate and the transfer layer, it is also advantageous to improve the adhesion between the substrate and the transfer layer. Further, since it can be stored in a state before crosslinking, an effect can be expected in the extension of the life of the transfer film. The total amount of light irradiated to the laminate of the substrate/transfer layer/support film is preferably 200 mJ/cm 2 to 10,000 mJ/cm 2 , more preferably 300 mJ/cm 2 to 8,000 mJ/cm 2 , particularly preferably It is 500 mJ/cm 2 to 5,000 mJ/cm 2 . When the total amount of irradiation is less than 200 mJ/cm 2 , there is a case where when the photoacid generator or the photobase generator is activated, energy is insufficient and it is not sufficiently activated. When the total amount of irradiation is more than 10,000 mJ/cm 2 , there is a case where activation takes a long time.

另外,自將轉印膜積層於基板而成的積層體剝離支撐體 膜後,照射光時,使本發明的轉印膜的轉印層側的面與基板接觸進行加壓及/或加熱,而獲得基板/轉印層/支撐體膜的積層體,並對自該積層體剝離支撐體膜而得的基板/轉印層的積層體照射光,藉此將轉印層交聯。在進行光照射時,若基板透光,則可自基板及轉印層的任一側進行光照射,亦可自兩面照射光。根據本形態,可對轉印層直接照射光,因此可降低因支撐體膜引起的能量損 失,並可效率更佳地產生酸或鹼。另外,由於能以交聯前的狀態保存,因此在轉印膜的壽命延長上亦可期待效果。照射至基板/轉印層的積層體的光的總量,較佳為100mJ/cm2~10,000mJ/cm2,更佳為200mJ/cm2~8,000mJ/cm2,尤佳為300mJ/cm2~5,000mJ/cm2。在照射總量少於100mJ/cm2時,存在以下情況:在使光酸產生劑或光鹼產生劑活化時,能量不充分而無法充分地活化。 在照射總量多於10,000mJ/cm2時,有活化需要長時間的情況。 In addition, when the laminated body obtained by laminating the transfer film on the substrate is peeled off from the support film, when the light is irradiated, the transfer layer side surface of the transfer film of the present invention is brought into contact with the substrate to be pressurized and/or heated. The laminate of the substrate/transfer layer/support film is obtained, and the laminate of the substrate/transfer layer obtained by peeling the support film from the laminate is irradiated with light to crosslink the transfer layer. When light is irradiated, if the substrate is light-transmitted, light irradiation may be performed from either side of the substrate and the transfer layer, or light may be irradiated from both sides. According to this aspect, the transfer layer can be directly irradiated with light, so that energy loss due to the support film can be reduced, and an acid or a base can be more efficiently produced. Further, since it can be stored in a state before crosslinking, an effect can be expected in the extension of the life of the transfer film. The total amount of light irradiated to the laminate of the substrate/transfer layer is preferably from 100 mJ/cm 2 to 10,000 mJ/cm 2 , more preferably from 200 mJ/cm 2 to 8,000 mJ/cm 2 , and particularly preferably 300 mJ/cm. 2 ~ 5,000mJ/cm 2 . When the total amount of irradiation is less than 100 mJ/cm 2 , there is a case where when the photoacid generator or the photobase generator is activated, energy is insufficient and it is not sufficiently activated. When the total amount of irradiation is more than 10,000 mJ/cm 2 , there is a case where activation takes a long time.

[具凹凸構造的基板的熱處理] [Heat treatment of substrate with uneven structure]

將包含矽氧烷組成物、表面具有凹凸形狀的交聯轉印層積層於基板上而成的具凹凸構造的基板,藉由在高溫下進行熱處理,而可獲得更高的耐熱性。熱處理可對基板/轉印層/支撐體膜的積層體進行,亦可對剝離了支撐體膜的基板/轉印層這2層積層體進行。為了獲得基板/轉印層這2層積層體,在熱處理前先剝離支撐體膜時,較佳為在轉印步驟中的加壓時的溫度以下的溫度下剝離。在剝離時的溫度高於加壓時的溫度時,存在以下情況:轉印層的形狀崩解,或自支撐體膜的脫模性降低。 A substrate having a concavo-convex structure in which a cross-linking transfer layer comprising a siloxane assembly and a cross-linked transfer layer having a concavo-convex shape is laminated on a substrate is subjected to heat treatment at a high temperature to obtain higher heat resistance. The heat treatment may be performed on the laminate of the substrate/transfer layer/support film, or on the two-layer laminate of the substrate/transfer layer from which the support film is peeled off. In order to obtain a two-layer laminate of the substrate/transfer layer, when the support film is peeled off before the heat treatment, it is preferably peeled off at a temperature lower than the temperature at the time of pressurization in the transfer step. When the temperature at the time of peeling is higher than the temperature at the time of pressurization, there is a case where the shape of the transfer layer is disintegrated or the release property of the self-supporting film is lowered.

熱處理溫度可根據具有凹凸形狀的交聯轉印層所需要 的耐熱性、耐化學品性及可靠性而適當設定。例如在將具凹凸構造的基板加工成LED製造中所使用的具圖案的藍寶石基板時,在磊晶成長步驟中變為約1,100℃的高溫,因此熱處理溫度較佳為1,000℃~1,500℃,更佳為1,100℃~1,400℃。在熱處理溫度小於1,000℃時,有所形成的凹凸形狀在磊晶成長步驟中無法保持而崩 解的情況。在熱處理溫度超過1,500℃時,存在以下情況:在熱處理中產生龜裂,或因與基板的熱膨脹的差而捲曲。 The heat treatment temperature can be required according to the crosslinked transfer layer having a concavo-convex shape The heat resistance, chemical resistance, and reliability are appropriately set. For example, when a substrate having a textured structure is processed into a patterned sapphire substrate used in LED manufacturing, it has a high temperature of about 1,100 ° C in the epitaxial growth step, so the heat treatment temperature is preferably 1,000 ° C to 1,500 ° C. Good is 1,100 ° C ~ 1,400 ° C. When the heat treatment temperature is less than 1,000 ° C, the formed uneven shape cannot be maintained and collapses in the epitaxial growth step. The situation of the solution. When the heat treatment temperature exceeds 1,500 ° C, there is a case where cracks are generated in the heat treatment or curl due to a difference in thermal expansion from the substrate.

另一方面,在使用具凹凸構造的基板的凹凸構造作為用 以將蝕刻速率低的無機材料或結晶材料蝕刻的罩幕時,使用蝕刻對象的材料作為基板,但凹凸構造與基板相比需要降低蝕刻速率。因此,有效的是使轉印層中的有機成分燒散而形成緻密的二氧化矽膜,因此熱處理溫度較佳為700℃~1,500℃。在熱處理溫度小於700℃時,存在以下情況:轉印層中殘留有機物,或未充分地緻密化,而蝕刻速率不降低。在熱處理溫度高於1,500℃的溫度時,有轉印層產生龜裂的情況。 On the other hand, the uneven structure of the substrate having the uneven structure is used as When a mask having an inorganic material or a crystalline material having a low etching rate is etched, a material to be etched is used as the substrate, but the uneven structure is required to lower the etching rate as compared with the substrate. Therefore, it is effective to burn the organic component in the transfer layer to form a dense ruthenium dioxide film, and therefore the heat treatment temperature is preferably from 700 ° C to 1,500 ° C. When the heat treatment temperature is less than 700 ° C, there are cases where organic matter remains in the transfer layer or is not sufficiently densified, and the etching rate is not lowered. When the heat treatment temperature is higher than 1,500 ° C, there is a case where the transfer layer is cracked.

而且,在太陽電池等的表面使用具凹凸構造的基板以控 制光的反射或透射時,需要數百度的耐熱性與高的透光性、折射率的調整。此時的熱處理溫度較佳為150℃~700℃,更佳為200℃~400℃。在熱處理溫度低於150℃時,存在以下情況:矽氧烷的交聯反應不充分而耐熱性降低,或形狀容易崩解。另一方面,在熱處理溫度超過700℃時,存在以下情況:喪失與矽氧烷的矽原子直接鍵結的有機官能基,而無法調整折射率。另外,在熱處理時,為了防止因急遽的溫度變化引起的基板或轉印層的龜裂或剝離,而可藉由在低於高溫熱處理溫度的溫度下進行預烘烤,或進行電漿照射,而預先進行交聯。 Moreover, a substrate having a concave-convex structure is used on the surface of a solar cell or the like to control When reflecting or transmitting light, it requires several hundred degrees of heat resistance, high light transmittance, and adjustment of refractive index. The heat treatment temperature at this time is preferably from 150 ° C to 700 ° C, more preferably from 200 ° C to 400 ° C. When the heat treatment temperature is lower than 150 ° C, there is a case where the crosslinking reaction of the decane is insufficient, the heat resistance is lowered, or the shape is easily disintegrated. On the other hand, when the heat treatment temperature exceeds 700 ° C, there is a case where the organic functional group directly bonded to the ruthenium atom of the decane is lost, and the refractive index cannot be adjusted. Further, in the heat treatment, in order to prevent cracking or peeling of the substrate or the transfer layer due to a rapid temperature change, prebaking or plasma irradiation may be performed at a temperature lower than the high temperature heat treatment temperature. And cross-linking in advance.

[具凹凸構造的基板的用途例] [Example of use of substrate having uneven structure]

如此而得的具凹凸構造的基板由於具有耐熱性高的凹凸形 狀,因此可用作假定在高溫環境下使用的抗反射板、或光散射板。另外,在使轉印層充分交聯時,可用作蝕刻抗蝕劑膜,因此亦可用於製造具圖案的藍寶石基板,其有助提高於LED光取出效率。而且,可用於LED等的最表面而提高光取出效率,或用於太陽電池面板等的構件而提高發電效率。 The substrate having the uneven structure thus obtained has a heat-resistant concavo-convex shape It can be used as an anti-reflection plate or a light-scattering plate which is assumed to be used in a high-temperature environment. In addition, when the transfer layer is sufficiently crosslinked, it can be used as an etching resist film, and thus can also be used to manufacture a patterned sapphire substrate, which contributes to an improvement in LED light extraction efficiency. Further, it can be used for the outermost surface of an LED or the like to improve the light extraction efficiency, or to be used for a member such as a solar cell panel to improve power generation efficiency.

[實施例] [Examples]

基于實施例對本發明進行具體地說明,但本發明並非僅限定於實施例。 The present invention will be specifically described based on the examples, but the present invention is not limited to the examples.

(1)凹凸構造的形狀的評價 (1) Evaluation of the shape of the uneven structure (1-1)基板的準備 (1-1) Preparation of the substrate

藉由鼓風機除去附著於基板的表面的灰塵後,使用魁半導體股份有限公司製造的桌上真空電漿裝置,以15000V交流電(Alternating Current,AC)進行5分鐘電漿照射。然後使用亞速旺(AS ONE)股份有限公司製造的3周波超音波清洗機型號VS-100III,以45kHz歷時10分鐘將浸漬於純水中的基板清洗2次。清洗後,附著於基板的純水藉由鼓風機除去。 After the dust adhering to the surface of the substrate was removed by a blower, plasma was irradiated for 5 minutes using a table vacuum plasma apparatus manufactured by Quebec Semiconductor Co., Ltd. at 15000 V alternating current (AC). Then, the substrate immersed in pure water was washed twice at 45 kHz for 10 minutes using a 3-week ultrasonic cleaning machine model VS-100III manufactured by AS ONE Co., Ltd. After washing, the pure water attached to the substrate is removed by a blower.

(1-2)轉印方法 (1-2) Transfer method

使20mm×20mm尺寸的轉印膜或交聯轉印膜的轉印層表面與(1-1)中所準備的被轉印體接觸,並壓製後,將支撐體膜剝離而獲得具凹凸構造的基板。 The surface of the transfer layer of the transfer film or the cross-linked transfer film having a size of 20 mm × 20 mm is brought into contact with the transfer target body prepared in (1-1), and after pressing, the support film is peeled off to obtain a textured structure. The substrate.

(1-3)熱處理方法 (1-3) Heat treatment method

將以上述方式而得的具凹凸構造的基板投入至爐內溫度設定 為50℃的大和科學(Yamato Scientific)股份有限公司的馬弗爐(muffle furnace)FP410內,以10℃/min的速度升溫至特定溫度後,在特定溫度下進行1小時熱處理。處理後,將爐內放置冷卻至25℃。 Putting the substrate with the uneven structure obtained in the above manner into the furnace temperature setting The temperature was raised to a specific temperature at a rate of 10 ° C/min in a muffle furnace FP410 of Yamato Scientific Co., Ltd. at 50 ° C, and then heat-treated at a specific temperature for 1 hour. After the treatment, the furnace was placed and cooled to 25 °C.

(1-4)形狀的觀察及評價方法 (1-4) Shape observation and evaluation method

形成於基板上的凹凸構造的形狀是藉由凹凸寬度尺寸與凹凸高度進行評價。此時,所謂凹凸寬度尺寸,如圖2(a)~圖2(d)所示般,是2個鄰接的極小值間的水平距離10。另外,所謂凹凸高度,如圖2(a)~圖2(d)所示般,是凹凸形狀的鄰接的極大位置與極小位置之間的垂直距離11。在頂部的相鄰的極小位置所成的高度各不相同時,將更高側的極小位置與頂部所成的垂直距離設為凹凸高度。 The shape of the uneven structure formed on the substrate was evaluated by the uneven width dimension and the uneven height. At this time, the uneven width dimension is a horizontal distance 10 between two adjacent minimum values as shown in FIGS. 2( a ) to 2 ( d ). Further, as shown in FIGS. 2(a) to 2(d), the uneven height is a vertical distance 11 between the adjacent maximum position and the minimum position of the uneven shape. When the heights of the adjacent extremely small positions at the top are different, the vertical distance between the minimum position on the higher side and the top is set as the concave-convex height.

在凹凸寬度尺寸及凹凸高度的任一者為1μm以上時, 藉由基恩士(KEYENCE)股份有限公司製造的雷射顯微鏡VK9700進行測定。關於測定倍率,在凹凸寬度尺寸及凹凸高度小者為1μm以上且小於20μm時設為1,500倍,在凹凸寬度尺寸及凹凸高度小者為20μm以上時設為500倍。 When either of the uneven width dimension and the uneven height is 1 μm or more, The measurement was carried out by a laser microscope VK9700 manufactured by KEYENCE. The measurement magnification is 1,500 times when the uneven width and the uneven height are 1 μm or more and less than 20 μm, and 500 times when the uneven width and the uneven height are 20 μm or more.

另一方面,在凹凸寬度尺寸及凹凸高度的任一者小於1 μm時,藉由布魯克AXS(Bruker AXS)股份有限公司製造的Dimension ICON型號的間歇接觸式(Tapping Mode)原子間力顯微鏡進行觀察及測定。關於觀察視野,為了使多個凹凸形狀進入觀察視野,而藉由凹凸寬度尺寸進行規定。即,在凹凸寬度尺寸 小於0.02μm時,將測定視野設為0.1μm×0.1μm,在凹凸寬度尺寸為0.02μm以上且小於0.1μm時,將測定視野設為0.5μm×0.5μm,在凹凸寬度尺寸為0.1μm以上且小於0.2μm時,將測定視野設為2μm×2μm,在凹凸寬度尺寸為0.2μm以上時,將測定視野設為5μm×5μm。測定是使用布魯克AXS股份有限公司的軟體NanoScope Analysis Ver.1.40。測定點任意選擇5點,將該5點的測量值進行平均,並將所得的平均值分別作為凹凸高度及凹凸寬度。 On the other hand, either the width of the concave and convex and the height of the concave and convex are less than 1 In the case of μm, observation and measurement were carried out by a Tapping Mode atomic force microscope of a Dimension ICON model manufactured by Bruker AXS (Bruker AXS) Co., Ltd. Regarding the observation field of view, in order to allow a plurality of concavo-convex shapes to enter the observation field of view, the concavity and convexity width dimension is defined. Ie, in the width of the bump width When the thickness is less than 0.02 μm, the measurement field of view is 0.1 μm × 0.1 μm, and when the uneven width is 0.02 μm or more and less than 0.1 μm, the measurement field of view is 0.5 μm × 0.5 μm, and the uneven width is 0.1 μm or more. When the thickness is less than 0.2 μm, the measurement field of view is 2 μm × 2 μm, and when the uneven width is 0.2 μm or more, the measurement field of view is 5 μm × 5 μm. The measurement was performed using the software NanoScope Analysis Ver. 1.40 of Bruker AXS Co., Ltd. Five points were arbitrarily selected at the measurement points, and the measured values of the five points were averaged, and the obtained average values were taken as the height of the unevenness and the width of the unevenness.

關於熱處理後的形狀評價,將設熱處理前的凹凸高度為 100%時的熱處理前後的凹凸高度作為高度保持率(即,(熱處理後的凹凸高度/熱處理前的凹凸高度)×100(%)),將設熱處理前的凹凸寬度為100%時的熱處理前後的凹凸寬度作為寬度保持率(即,(熱處理後的凹凸寬度/熱處理前的凹凸寬度)×100(%)),而評價形狀保持性。熱處理後的形狀評價的基準藉由以下方式規定、表記。 Regarding the shape evaluation after the heat treatment, the height of the concavities and convexities before the heat treatment is set to The height of the concavities and convexities before and after the heat treatment at 100% is taken as the height retention ratio (that is, (the height of the concavities and convexities after the heat treatment/the height of the concavities and convexities after the heat treatment) × 100 (%)), and before and after the heat treatment when the unevenness width before the heat treatment is 100% The unevenness width was evaluated as the shape retention ratio (i.e., (concave width after heat treatment/concave width after heat treatment) × 100 (%)). The criteria for shape evaluation after heat treatment are defined and expressed in the following manner.

4:高度保持率及寬度保持率均為90%以上、100%以下 4: The height retention rate and the width retention ratio are both 90% or more and 100% or less.

3:高度保持率及寬度保持率的至少一者為50%以上且小於90% 3: at least one of the height retention ratio and the width retention ratio is 50% or more and less than 90%

2:高度保持率及寬度保持率均小於50%,且至少一者為10%以上且小於50% 2: the height retention ratio and the width retention ratio are both less than 50%, and at least one is 10% or more and less than 50%.

1:高度保持率及寬度保持率均小於10%。 1: Height retention and width retention are less than 10%.

(2)轉印膜的殘膜厚度不均的評價 (2) Evaluation of the uneven thickness of the residual film of the transfer film

以可觀察厚度方向的方式,藉由切片機切削轉印膜,使用掃描型電子顯微鏡觀察剖面,藉此測定殘膜厚度。關於測定倍率,在轉印層厚度小於0.5μm時,設為100,000倍,在轉印層厚度為0.5μm以上且小於1.0μm時,設為50,000倍,在轉印層厚度為1.0μm以上且小於2.0μm時,設為20,000倍,在轉印層厚度為2.0μm以上且小於10μm時,設為5,000倍,在轉印層厚度為10μm以上且小於20μm時,設為2,500倍,在轉印層厚度為20μm以上時,設為500倍。測定點數設為任意的10點,藉由上述[光酸產生劑與光鹼產生劑]的欄中所記載的方法算出殘膜厚度不均,並根據以下評價基準對該值進行評價。 The residual film thickness was measured by cutting the transfer film by a microtome and observing the cross section using a scanning electron microscope in such a manner that the thickness direction was observable. The measurement magnification is set to 100,000 times when the thickness of the transfer layer is less than 0.5 μm, and 50,000 times when the thickness of the transfer layer is 0.5 μm or more and less than 1.0 μm, and the thickness of the transfer layer is 1.0 μm or more and less than When it is 2.0 μm, it is 20,000 times, and when the thickness of the transfer layer is 2.0 μm or more and less than 10 μm, it is 5,000 times. When the thickness of the transfer layer is 10 μm or more and less than 20 μm, it is set to 2,500 times. When the thickness is 20 μm or more, it is set to 500 times. The number of measurement points was set to 10 points, and the residual film thickness unevenness was calculated by the method described in the column of the above-mentioned [photoacid generator and photobase generator], and the value was evaluated based on the following evaluation criteria.

3:厚度不均小於15% 3: thickness unevenness is less than 15%

2:厚度不均為15%以上且小於25% 2: thickness is not more than 15% and less than 25%

1:厚度不均為25%以上。 1: The thickness is not more than 25%.

(3)藉由FT-IR的交聯評價 (3) Evaluation by cross-linking of FT-IR

使用日本分光股份有限公司製造的FT-IR傅立葉變換紅外分光光度計FT/IR-6100 A型,測定交聯轉印膜、或具凹凸構造的基板上的轉印層的FT-IR光譜。測定是使用日本分光股份有限公司的軟體Spectra Manager Version2的測定程式,使用搭載了Ge製造的稜鏡的ATR PRO650G,在波數範圍為400cm-1~4,000cm-1、分解能為4cm-1、累計次數為128次的條件下進行。根據測定所得的光譜,藉由說明書中所記載的方法,求出P1及P2的面積,並算出P1/P2。 The FT-IR spectrum of the transfer layer on the crosslinked transfer film or the substrate having the uneven structure was measured using an FT-IR Fourier transform infrared spectrophotometer FT/IR-6100 A manufactured by JASCO Corporation. Measurement was Nippon Bunko Co.'s Spectra Manager Version2 software program measured using equipped ATR PRO650G Ge Prism manufactured in the wave number range of 400cm -1 ~ 4,000cm -1, the decomposition energy of 4cm -1, total The number of times was 128. Based on the measured spectrum, the areas of P1 and P2 were obtained by the method described in the specification, and P1/P2 was calculated.

[實施例1] [Example 1]

支撐體膜是使用:在作為環狀聚烯烴系樹脂的日本瑞翁(ZEON)股份有限公司製造的「ZEONOR FILM」(註冊商標)型號ZF14的厚度為100μm的膜的單面,藉由熱壓印而賦形凹凸形狀者。熱壓印使用間距為5μm、高度為2.5μm的稜鏡形狀的鎳電鑄模具。在模具溫度為180℃、壓力為2.0MPa的條件下,將模具按壓在支撐體膜上並保持30秒鐘後,冷卻至100℃而解除壓力,並將支撐體膜脫模。裝置是使用米卡多科技(Mikado Technos)股份有限公司製造的2噸真空加熱壓製機型號MKP-150TV-WH。 The support film is a single side of a film having a thickness of 100 μm of "ZEONOR FILM" (registered trademark) model ZF14 manufactured by ZEON Co., Ltd., which is a cyclic polyolefin resin, by hot pressing. Printed and shaped concave and convex shapes. Hot stamping uses a crucible-shaped nickel electroforming mold having a pitch of 5 μm and a height of 2.5 μm. Under the conditions of a mold temperature of 180 ° C and a pressure of 2.0 MPa, the mold was pressed against the support film and held for 30 seconds, and then cooled to 100 ° C to release the pressure, and the support film was released. The device was a 2 ton vacuum heating press model MKP-150TV-WH manufactured by Mikado Technos Co., Ltd.

在丙二醇單丙醚(以下記為PGPE)中,以濃度為20質量%的方式,溶解小西化學工業股份有限公司製造的聚甲基倍半矽氧烷SR-13,在所得的溶液中,以固體成分按聚甲基倍半矽氧烷比計為0.5質量%的方式,添加三亞普羅股份有限公司製造的光酸產生劑CPI-200K(鋶系光酸產生劑),而製備矽氧烷溶膠。使用米卡薩(Mikasa)股份有限公司製造的旋塗機型號1H-DX2,將所得的矽氧烷溶膠塗佈於支撐體膜的賦形了凹凸形狀的表面,在90℃下乾燥2分鐘而獲得轉印膜。自所得的轉印膜的轉印層表面照射500mJ/cm2的UV,使轉印層的光酸產生劑活化,促進矽氧烷的交聯反應而獲得交聯轉印膜。UV照射是使用優志旺(USHIO)電機股份有限公司的曝光裝置用光源單元Multilight ML-251A/B。 In the propylene glycol monopropyl ether (hereinafter referred to as PGPE), polymethylsesquioxane SR-13 manufactured by Xiaoxi Chemical Industry Co., Ltd. was dissolved at a concentration of 20% by mass, and in the obtained solution, The solid component was added to a photoacid generator CPI-200K (an oxime photoacid generator) manufactured by Sanya Pro Co., Ltd. in a manner of 0.5% by mass based on the polymethylsesquioxane ratio to prepare a oxime sol. . Using the spin coater model 1H-DX2 manufactured by Mikasa Co., Ltd., the obtained decane sol was applied to the surface of the support film which was shaped into a concave-convex shape, and dried at 90 ° C for 2 minutes. A transfer film was obtained. The surface of the transfer layer of the obtained transfer film was irradiated with UV of 500 mJ/cm 2 to activate the photoacid generator of the transfer layer, and the crosslinking reaction of the decane was promoted to obtain a crosslinked transfer film. The UV irradiation was performed using the light source unit Multilight ML-251A/B of the exposure apparatus of USHIO Electric Co., Ltd.

在準備作為基板的日本康寧(Corning Japan)股份有限公司製造的無鹼玻璃EAGLE2000(30mm×30mm、厚度為0.63 mm)上,以交聯轉印層表面與基板接觸的方式,積層交聯轉印膜。繼而在交聯轉印膜的支撐體膜面上積層金陽公司製造的型號F200作為緩衝材料,而以玻璃基板/交聯轉印膜/緩衝材料的構成,在壓製溫度為20℃、壓製壓力為1.38MPa下壓製10秒鐘。裝置是使用米卡多科技股份有限公司製造的2噸真空加熱壓製機型號MKP-150TV-WH。然後,在室溫下將作為支撐體的膜剝離,而獲得包含玻璃基板/交聯轉印層的具凹凸構造的基板。 An alkali-free glass EAGLE2000 (30mm × 30mm, thickness 0.63) manufactured by Corning Japan Co., Ltd. as a substrate On the mm), the transfer film is laminated by laminating the surface of the cross-linking transfer layer in contact with the substrate. Then, a model F200 manufactured by Jinyang Co., Ltd. was laminated as a buffer material on the support film surface of the crosslinked transfer film, and a glass substrate/crosslinked transfer film/buffer material was used, and the pressing temperature was 20 ° C, and the pressing pressure was applied. Pressed at 1.38 MPa for 10 seconds. The device is a 2 ton vacuum heating press model MKP-150TV-WH manufactured by Micardo Technology Co., Ltd. Then, the film as a support was peeled off at room temperature, and a substrate having a concave-convex structure including a glass substrate/crosslinked transfer layer was obtained.

[實施例2] [Embodiment 2]

將光酸產生劑CPI-200K的固體成分含量設為0.2質量%,除此以外,以與實施例1相同的方式,獲得交聯轉印膜及具凹凸構造的基板。 A crosslinked transfer film and a substrate having a concavo-convex structure were obtained in the same manner as in Example 1 except that the solid content of the photoacid generator CPI-200K was changed to 0.2% by mass.

[實施例3] [Example 3]

將光酸產生劑CPI-200K的固體成分含量設為5.0質量%,除此以外,以與實施例1相同的方式,獲得交聯轉印膜及具凹凸構造的基板。 A crosslinked transfer film and a substrate having a concavo-convex structure were obtained in the same manner as in Example 1 except that the solid content of the photoacid generator CPI-200K was changed to 5.0% by mass.

[實施例4] [Example 4]

將光酸產生劑CPI-200K的固體成分含量設為0.3質量%,除此以外,以與實施例1相同的方式,獲得交聯轉印膜及具凹凸構造的基板。 A crosslinked transfer film and a substrate having a concavo-convex structure were obtained in the same manner as in Example 1 except that the solid content of the photoacid generator CPI-200K was changed to 0.3% by mass.

[實施例5] [Example 5]

將光酸產生劑CPI-200K的固體成分含量設為2.5質量%,除此以外,以與實施例1相同的方式,獲得交聯轉印膜及具凹凸構 造的基板。 A crosslinked transfer film and a textured structure were obtained in the same manner as in Example 1 except that the solid content of the photoacid generator CPI-200K was 2.5% by mass. The substrate is made.

[實施例6] [Embodiment 6]

將光酸產生劑CPI-200K的固體成分含量設為0.4質量%,除此以外,以與實施例1相同的方式,獲得交聯轉印膜及具凹凸構造的基板。 A crosslinked transfer film and a substrate having a concavo-convex structure were obtained in the same manner as in Example 1 except that the solid content of the photoacid generator CPI-200K was changed to 0.4% by mass.

[實施例7] [Embodiment 7]

將光酸產生劑CPI-200K的固體成分含量設為0.9質量%,除此以外,以與實施例1相同的方式,獲得交聯轉印膜。繼而,在準備作為基板的日本康寧股份有限公司製造的無鹼玻璃EAGLE2000(30mm×30mm、厚度為0.63mm)上,以交聯轉印層表面與基板接觸的方式,積層交聯轉印膜,並以玻璃基板/交聯轉印膜的構成進行壓製。壓製是使用大成壓膜機(TAISEI LAMINATOR)股份有限公司製造的VA-420H型壓膜機,在輥推力為0.2MPa、搬送速度為3m/min、壓製溫度為20℃下進行積層。積層後,將支撐體膜剝離而獲得包含玻璃基板/交聯轉印層的具凹凸構造的基板。 A crosslinked transfer film was obtained in the same manner as in Example 1 except that the solid content of the photoacid generator CPI-200K was 0.9% by mass. Then, on the alkali-free glass EAGLE2000 (30 mm × 30 mm, thickness: 0.63 mm) manufactured by Japan Corning Co., Ltd. as a substrate, the surface of the crosslinked transfer layer was brought into contact with the substrate to laminate the transfer film. The pressing was carried out by the configuration of a glass substrate/crosslinked transfer film. The press was carried out by using a VA-420H laminator manufactured by TAISEI LAMINATOR Co., Ltd., and having a roll thrust of 0.2 MPa, a transfer speed of 3 m/min, and a press temperature of 20 °C. After lamination, the support film was peeled off to obtain a substrate having a concave-convex structure including a glass substrate/crosslinked transfer layer.

[實施例8] [Embodiment 8]

將UV照射量設為100mJ/cm2,除此以外,以與實施例1相同的方式,獲得交聯轉印膜。然後以與實施例7相同的方式,獲得具凹凸構造的基板。 A crosslinked transfer film was obtained in the same manner as in Example 1 except that the amount of UV irradiation was changed to 100 mJ/cm 2 . Then, in the same manner as in Example 7, a substrate having a textured structure was obtained.

[實施例9] [Embodiment 9]

將UV照射量設為200mJ/cm2,除此以外,以與實施例1相 同的方式,獲得交聯轉印膜。然後以與實施例7相同的方式,獲得具凹凸構造的基板。 A crosslinked transfer film was obtained in the same manner as in Example 1 except that the amount of UV irradiation was changed to 200 mJ/cm 2 . Then, in the same manner as in Example 7, a substrate having a textured structure was obtained.

[實施例10] [Embodiment 10]

將支撐體膜設為丙烯酸系樹脂膜,將對轉印膜的UV照射量設為1,500mJ/cm2,除此以外,以與實施例1相同的方式,獲得具凹凸構造的基板。另外,支撐體膜是藉由以下方法而製作。在厚度為100μm的東麗(Toray)股份有限公司製造的PET膜「Lumirror」(註冊商標)型號U34上,以厚度為10μm塗佈東亞合成股份有限公司製造的紫外線硬化型丙烯酸系樹脂「Aronix」(註冊商標)UV3701。在該紫外線硬化型丙烯酸系樹脂層上,疊置間距為5μm、高度為2.5μm的具有稜鏡形狀的鎳電鑄模具後,自PET膜面照射1,000mJ/cm2的UV使丙烯酸系樹脂硬化。然後,將模具與丙烯酸系樹脂的界面剝離,而獲得在丙烯酸系樹脂表面形成了凹凸形狀的支撐體膜。 A substrate having a concavo-convex structure was obtained in the same manner as in Example 1 except that the support film was an acrylic resin film and the amount of UV irradiation on the transfer film was 1,500 mJ/cm 2 . Further, the support film was produced by the following method. Ultraviolet-curing acrylic resin "Aronix" manufactured by Toagosei Co., Ltd. was coated with a thickness of 10 μm on a PET film "Lumirror" (registered trademark) model U34 manufactured by Toray Co., Ltd., having a thickness of 100 μm. (registered trademark) UV3701. On the ultraviolet curable acrylic resin layer, a nickel electroformed mold having a crucible shape with a pitch of 5 μm and a height of 2.5 μm was laminated, and then a UV of 1,000 mJ/cm 2 was irradiated from the surface of the PET film to harden the acrylic resin. . Then, the interface between the mold and the acrylic resin is peeled off to obtain a support film having an uneven shape formed on the surface of the acrylic resin.

[實施例11] [Example 11]

藉由熔融擠出法將作為環狀聚烯烴系樹脂的寶理塑膠(polyplastics)股份有限公司製造的「TOPAS」(註冊商標)型號6013的樹脂製膜,並將所得的厚度為60μm的膜作為支撐體膜,將對轉印膜的UV照射量設為300mJ/cm2,除此以外,以與實施例1相同的方式,獲得具凹凸構造的基板。 A resin of "TOPAS" (registered trademark) model 6013 manufactured by Polyplastics Co., Ltd., which is a cyclic polyolefin resin, was formed by a melt extrusion method, and a film having a thickness of 60 μm was obtained. A substrate having a concavo-convex structure was obtained in the same manner as in Example 1 except that the amount of the UV irradiation of the transfer film was 300 mJ/cm 2 .

[實施例12] [Embodiment 12]

不進行實施例1中的UV照射,取而代之的是自將轉印膜積 層於基板上而得的基板/轉印膜的積層體的支撐體膜側,照射1,000mJ/cm2的UV,除此以外,以與實施例1相同的方式,獲得具凹凸構造的基板。 Instead of performing the UV irradiation in the first embodiment, the support film side of the laminate of the substrate/transfer film obtained by laminating the transfer film on the substrate is irradiated with UV of 1,000 mJ/cm 2 . A substrate having a textured structure was obtained in the same manner as in Example 1 except for the first embodiment.

[實施例13] [Example 13]

不進行實施例1中的UV照射,取而代之的是自將轉印膜積層於基板上而得的基板/轉印膜的積層體剝離支撐體膜,並自所得的基板/轉印層的積層體的轉印層側照射750mJ/cm2的UV,除此以外,以與實施例1相同的方式,獲得具凹凸構造的基板。 The UV irradiation in Example 1 was not carried out, and instead, the laminate of the substrate/transfer film obtained by laminating the transfer film on the substrate was peeled off from the support film, and the laminate of the obtained substrate/transfer layer was obtained. A substrate having a concavo-convex structure was obtained in the same manner as in Example 1 except that the transfer layer side was irradiated with UV of 750 mJ/cm 2 .

[實施例14] [Embodiment 14]

將用於熱壓印的模具設為:一條邊為20μm、高度為10μm的正四角錘形狀與相鄰的四角錘相互分別接觸頂點及邊而存在的間距為20μm的形狀;及將矽氧烷溶膠的聚甲基倍半矽氧烷濃度設為40質量%;除此以外,以與實施例1相同的方式,獲得具凹凸構造的基板。 The mold for hot stamping is set to have a shape of a square hammer having a side of 20 μm and a height of 10 μm and a shape of a pitch of 20 μm in which the adjacent square hammers respectively contact the apex and the side; and the helium oxide A substrate having a concavo-convex structure was obtained in the same manner as in Example 1 except that the polymethylsilsesquioxane concentration of the sol was 40% by mass.

[實施例15] [Example 15]

將具凹凸構造的基板的熱處理溫度設為600℃,除此以外,以與實施例14相同的方式實施。 The same procedure as in Example 14 was carried out except that the heat treatment temperature of the substrate having the uneven structure was 600 °C.

[實施例16] [Example 16]

將用於熱壓印的模具設為:一條邊為2μm、高度為700nm的凸型四角柱以間距為4μm成格子狀配置者;及將矽氧烷溶膠的聚甲基倍半矽氧烷濃度設為15質量%;除此以外,以與實施例1相同的方式,獲得具凹凸構造的基板。 The mold for hot stamping is set as: a convex quadrangular prism having a side of 2 μm and a height of 700 nm arranged in a lattice shape with a pitch of 4 μm; and a concentration of polymethylsesquioxanes of a decyl sol sol A substrate having a concavo-convex structure was obtained in the same manner as in Example 1 except that the amount was 15% by mass.

[實施例17] [Example 17]

將具凹凸構造的基板的熱處理溫度設為600℃,除此以外,以與實施例16相同的方式實施。 The same procedure as in Example 16 was carried out except that the heat treatment temperature of the substrate having the uneven structure was 600 °C.

[實施例18] [Embodiment 18]

將用於熱壓印的模具設為直徑為4μm、高度為2μm、間距為4.5μm的凸型半球形狀,除此以外,以與實施例1相同的方式,獲得具凹凸構造的基板。 A substrate having a concavo-convex structure was obtained in the same manner as in Example 1 except that the mold for hot stamping was a convex hemispherical shape having a diameter of 4 μm, a height of 2 μm, and a pitch of 4.5 μm.

[實施例19] [Embodiment 19]

將用於熱壓印的模具設為間距為556nm的閃耀光柵(blazed grating),除此以外,以與實施例1相同的方式,獲得具凹凸構造的基板。 A substrate having a concavo-convex structure was obtained in the same manner as in Example 1 except that the mold for hot stamping was a blazed grating having a pitch of 556 nm.

[實施例20] [Example 20]

將用於熱壓印的模具設為:將凸部的寬度為0.25μm、高度為0.3μm、間距為0.3μm的旋轉橢圓體設為成正三角形狀離散地配置的形狀(以下,將使旋轉橢圓體離散地配置的形狀記為蛾眼形狀);及將矽氧烷溶膠的聚甲基倍半矽氧烷濃度設為10質量%;除此以外,以與實施例1相同的方式,獲得具凹凸構造的基板。 The mold for hot stamping is a shape in which a ellipsoid having a width of a convex portion of 0.25 μm, a height of 0.3 μm, and a pitch of 0.3 μm is discretely arranged in a regular triangular shape (hereinafter, a rotating ellipse is to be made) In the same manner as in Example 1, the shape was obtained in the same manner as in Example 1 except that the shape in which the body was discretely arranged was described as a moth-eye shape; and the polymethylsesquioxane concentration of the siloxane sol was 10% by mass. A substrate having a concave-convex structure.

[實施例21] [Example 21]

將用於熱壓印的模具設為:一條邊為5μm、高度為12μm的正四角錘形狀以間距為30μm成正三角形狀離散地配置者,除此以外,以與實施例1相同的方式獲得支撐體膜。另外,在PGPE中以成為20質量%的方式溶解小西化學工業股份有限公司製造的 聚苯基倍半矽氧烷SR-23,在所得溶液中,以按聚苯基倍半矽氧烷比計為0.3質量%的方式,混合作為光酸產生劑的艾依巴敕股份有限公司製造的EEPAG,而製備矽氧烷溶膠。繼而,以與實施例1相同的方式,製作轉印膜後,自轉印層側照射2,000mJ/cm2的UV,而製作交聯轉印膜,並藉由與實施例7相同的方法,轉印至基板而獲得具凹凸構造的基板。 The mold for hot stamping was set such that the shape of a square hammer having a side of 5 μm and a height of 12 μm was discretely arranged in a positive triangular shape with a pitch of 30 μm, and the support was obtained in the same manner as in the first embodiment. Body membrane. In addition, polyphenylsesquioxalate SR-23 manufactured by Xiaoxi Chemical Industry Co., Ltd. was dissolved in PGPE so as to be 20% by mass, and the obtained solution was measured by polyphenylsesquioxane ratio. In a manner of 0.3% by mass, EEPAG manufactured by Aiiba Co., Ltd., which is a photoacid generator, was mixed to prepare a oxime sol. Then, in the same manner as in Example 1, after the transfer film was produced, UV of 2,000 mJ/cm 2 was irradiated from the side of the transfer layer to prepare a crosslinked transfer film, and the same method as in Example 7 was carried out. The substrate is printed on the substrate to obtain a substrate having a concave-convex structure.

[實施例22] [Example 22]

將用於熱壓印的模具設為:直徑為0.05μm、高度為0.04μm的半球凸形狀以間距為0.07μm成正三角形狀離散地配置者,除此以外,以與實施例1相同的方式,獲得支撐體膜。另外,將信越化學工業股份有限公司製造的KBM-13(甲基三甲氧基矽烷)及KBM-403(3-縮水甘油氧基丙基三甲氧基矽烷)以莫耳比為70/30進行共聚合,將所得的矽氧烷聚合物以聚合物濃度為5質量%的方式溶解於PGPE中,並以按矽氧烷聚合物比計為0.5質量%的方式,添加作為光酸產生劑的艾依巴敕股份有限公司製造的CTPAG-II,而製備矽氧烷溶膠。繼而,以與實施例1相同的方式,製作轉印膜後,自轉印層側照射750mJ/cm2的UV而製作交聯轉印膜,藉由與實施例7相同的方法,轉印至基板上而獲得具凹凸構造的基板。 The mold for hot stamping was set to have a hemispherical convex shape having a diameter of 0.05 μm and a height of 0.04 μm discretely arranged in a regular triangular shape with a pitch of 0.07 μm, and in the same manner as in the first embodiment, A support film is obtained. In addition, KBM-13 (methyltrimethoxydecane) and KBM-403 (3-glycidoxypropyltrimethoxydecane) manufactured by Shin-Etsu Chemical Co., Ltd. were combined at a molar ratio of 70/30. In the polymerization, the obtained decane polymer was dissolved in PGPE at a polymer concentration of 5% by mass, and AI was added as a photoacid generator in a ratio of 0.5% by mass based on the rhodium hydride polymer ratio. The oxime sol was prepared by CTPAG-II manufactured by Ebony Co., Ltd. Then, after the transfer film was produced in the same manner as in Example 1, UV was irradiated from the transfer layer side at 750 mJ/cm 2 to prepare a crosslinked transfer film, and transferred to the substrate by the same method as in Example 7. The substrate having the uneven structure is obtained.

[實施例23] [Example 23]

將光酸產生劑設為三亞普羅股份有限公司製造的CPI-110B(鋶系光酸產生劑),並將其含量設為0.6質量%,除此以外,以 與實施例1相同的方式,獲得交聯轉印膜及具凹凸構造的基板。 The photoacid generator was set to CPI-110B (an actinic acid generator) manufactured by Sanya Pro Co., Ltd., and the content thereof was set to 0.6% by mass, and In the same manner as in Example 1, a crosslinked transfer film and a substrate having a textured structure were obtained.

[實施例24] [Example 24]

將光酸產生劑設為和光純藥工業股份有限公司製造的WPI-113(錪鹽系光酸產生劑),並將其含量設為5.0質量%;及將UV照射量設為3,000mJ/cm2;除此以外,以與實施例1相同的方式,獲得交聯轉印膜及具凹凸構造的基板。 The photo-acid generator was set to WPI-113 (salt-based photoacid generator) manufactured by Wako Pure Chemical Industries Co., Ltd., and the content thereof was set to 5.0% by mass; and the UV irradiation amount was set to 3,000 mJ/cm. 2 , a crosslinked transfer film and a substrate having a concavo-convex structure were obtained in the same manner as in Example 1.

[實施例25] [Example 25]

將光酸產生劑設為三和化學(SANWA CHEMICAL)股份有限公司製造的TFE-三嗪(三嗪系光酸產生劑),並將其含量設為5.0質量%,除此以外,以與實施例1相同的方式,獲得交聯轉印膜及具凹凸構造的基板。 The photo-acid generator was used as a TFE-triazine (triazine-based photoacid generator) manufactured by Sanwa Chemical Co., Ltd., and the content thereof was 5.0% by mass. In the same manner as in Example 1, a crosslinked transfer film and a substrate having a textured structure were obtained.

[實施例26] [Example 26]

以20質量%的濃度將小西化學工業股份有限公司製造的聚甲基苯基倍半矽氧烷SR-3321溶解於PGPE中,在所得的溶液中,以固體成分按SR-3321比計為0.8質量%的方式,添加三亞普羅股份有限公司製造的光酸產生劑CPI-200K(鋶系光酸產生劑),而製備矽氧烷溶膠,除此以外,以與實施例1相同的方式,獲得交聯轉印膜及具凹凸構造的基板。 Polymethylphenylsesquioxane SR-3321 manufactured by Xiaoxi Chemical Industry Co., Ltd. was dissolved in PGPE at a concentration of 20% by mass, and the obtained solution was 0.8 in terms of solid content by SR-3321 ratio. In the same manner as in Example 1, except that the photoacid generator CPI-200K (an oxime photoacid generator) manufactured by Sanya Pro Co., Ltd. was added to prepare a oxime sol. A cross-linked transfer film and a substrate having a textured structure.

[實施例27] [Example 27]

將信越化學工業股份有限公司製造的KBE-13(甲基三乙氧基矽烷)、KBE-04(四乙氧基矽烷)及KBE-22(二甲基二乙氧基矽烷)以莫耳比為65/20/15進行共聚合,將所得的矽氧烷聚合物藉 由PGPE而製成矽氧烷聚合物濃度為20質量%的溶液,並以按矽氧烷聚合物比計為0.8質量%的方式,添加三亞普羅股份有限公司製造的光酸產生劑CPI-200K(鋶系光酸產生劑),而製備矽氧烷溶膠,除此以外,以與實施例1相同的方式,獲得交聯轉印膜及具凹凸構造的基板。 KBE-13 (methyltriethoxydecane), KBE-04 (tetraethoxydecane) and KBE-22 (dimethyldiethoxydecane) manufactured by Shin-Etsu Chemical Co., Ltd. in molar ratio Copolymerization for 65/20/15, lending the obtained decane polymer A solution having a concentration of a phthalocyanine polymer of 20% by mass was prepared from PGPE, and a photoacid generator CPI-200K manufactured by Sanya Pro Co., Ltd. was added in a manner of 0.8% by mass based on the ratio of the decane to the polymer. A crosslinked transfer film and a substrate having a concavo-convex structure were obtained in the same manner as in Example 1 except that a phthalocyanine sol was prepared.

[實施例28] [Example 28]

將用於熱壓印的模具設為:直徑為230nm、高度為200nm的圓柱形狀以間距為460nm成正三角形狀離散地配置者,並將基板設為矽基板,將具凹凸構造的基板的熱處理溫度設為800℃,除此以外,以與實施例7相同的方式,獲得交聯轉印膜及具凹凸構造的基板。 The mold for hot stamping is such that a cylindrical shape having a diameter of 230 nm and a height of 200 nm is discretely arranged in a regular triangle shape with a pitch of 460 nm, and the substrate is set as a tantalum substrate, and the heat treatment temperature of the substrate having the uneven structure is used. A crosslinked transfer film and a substrate having a concavo-convex structure were obtained in the same manner as in Example 7 except that the temperature was changed to 800 °C.

[實施例29] [Example 29]

將基板設為藍寶石基板,將具凹凸構造的基板的熱處理溫度設為1,000℃,除此以外,以與實施例28相同的方式,獲得交聯轉印膜及具凹凸構造的基板。 A crosslinked transfer film and a substrate having a concavo-convex structure were obtained in the same manner as in Example 28 except that the substrate was a sapphire substrate and the heat treatment temperature of the substrate having the uneven structure was set to 1,000 °C.

[實施例30] [Example 30]

將基板設為氮化鎵基板,除此以外,以與實施例1相同的方式,獲得交聯轉印膜及具凹凸構造的基板。 A crosslinked transfer film and a substrate having a concavo-convex structure were obtained in the same manner as in Example 1 except that the substrate was a gallium nitride substrate.

[實施例31] [Example 31]

以濃度為20質量%的方式,將小西化學工業股份有限公司製造的聚甲基倍半矽氧烷SR-13溶解於PGPE中,在所得的溶液中,以固體成分按甲基矽氧烷聚合物比計為0.1質量%的方式,添加和 光純藥工業股份有限公司製造的光鹼產生劑WPBG-266,而製備矽氧烷溶膠,除此以外,以與實施例28相同的方式,獲得具凹凸構造的基板。 The polymethylsesquioxane SR-13 manufactured by Xiaoxi Chemical Industry Co., Ltd. was dissolved in PGPE in a concentration of 20% by mass, and the solid solution was polymerized as methyl siloxane in the obtained solution. The ratio is 0.1% by mass, adding and A substrate having a concavo-convex structure was obtained in the same manner as in Example 28 except that a photobase generator WPBG-266 manufactured by Wako Pure Chemical Industries, Ltd. was used to prepare a siloxane sol.

[實施例32] [Example 32]

以濃度為20質量%的方式,將小西化學工業股份有限公司製造的聚苯基倍半矽氧烷SR-23溶解於PGPE中,在所得的溶液中,以固體成分按甲基矽氧烷聚合物比計為0.05質量%的方式,添加和光純藥工業股份有限公司製造的光鹼產生劑WPBG-300,而製備矽氧烷溶膠,除此以外,以與實施例1相同的方式,獲得具凹凸構造的基板。 The polyphenylsesquioxanes SR-23 manufactured by Xiaoxi Chemical Industry Co., Ltd. were dissolved in PGPE at a concentration of 20% by mass, and the solid solution was polymerized as methyl siloxane in the obtained solution. In the same manner as in Example 1, except that the photobase generator WPBG-300 manufactured by Wako Pure Chemical Industries Co., Ltd. was added to a ratio of 0.05% by mass to prepare a siloxane sol. A substrate having a concave-convex structure.

[實施例33] [Example 33]

將用於熱壓印的模具設為:直徑為6μm、高度為9μm的圓柱形狀以間距為12μm成正三角形狀離散地配置者,除此以外,以與實施例1相同的方式,獲得支撐體膜。另外,將信越化學工業股份有限公司製造的KBM-13(甲基三甲氧基矽烷)、KBM-403(3-縮水甘油氧基丙基三甲氧基矽烷)及KBM-202SS(二苯基二甲氧基矽烷)以莫耳比為50/25/25進行共聚合,將所得的矽氧烷聚合物藉由PGPE而製成聚合物濃度為20質量%的溶液,並以按矽氧烷聚合物比計為5.0質量%的方式,添加艾依巴敕股份有限公司製造的光鹼產生劑EIPBG,而製備矽氧烷溶膠。繼而,以與實施例1相同的方式,獲得轉印膜後,自轉印層側照射250mJ/cm2的UV,而製作交聯轉印膜,藉由與實施例7相同的方法,轉印至 基板上而獲得具凹凸構造的基板。 The mold for hot stamping was prepared in such a manner that a cylindrical shape having a diameter of 6 μm and a height of 9 μm was discretely arranged in a regular triangular shape with a pitch of 12 μm, and a support film was obtained in the same manner as in Example 1. . In addition, KBM-13 (methyltrimethoxydecane), KBM-403 (3-glycidoxypropyltrimethoxydecane) and KBM-202SS (diphenyldimethyl) manufactured by Shin-Etsu Chemical Co., Ltd. The oxoxane is copolymerized at a molar ratio of 50/25/25, and the obtained oxirane polymer is made into a solution having a polymer concentration of 20% by mass by PGPE, and is a peroxosiloxane polymer. The oxime sol was prepared by adding a photobase generator EIPBG manufactured by Aiiba Co., Ltd. in a manner of 5.0% by mass. Then, in the same manner as in Example 1, after the transfer film was obtained, UV of 250 mJ/cm 2 was irradiated from the side of the transfer layer to prepare a crosslinked transfer film, and transferred to the same manner as in Example 7 A substrate having a concavo-convex structure is obtained on the substrate.

[實施例34] [Example 34]

將KBM-13、KBM-403及KBM-202SS的莫耳比設為70/25/5,並將艾依巴敕股份有限公司製造的光鹼產生劑EIPBG設為0.05質量%;及將光照射量設為750mJ/cm2;除此以外,以與實施例33相同的方式,獲得具凹凸構造的基板。 The molar ratio of KBM-13, KBM-403, and KBM-202SS was set to 70/25/5, and the photobase generator EIPBG manufactured by Aiiba Co., Ltd. was set to 0.05% by mass; and light was irradiated A substrate having a concavo-convex structure was obtained in the same manner as in Example 33 except that the amount was 750 mJ/cm 2 .

[比較例1] [Comparative Example 1]

藉由將東亞合成股份有限公司製造的紫外線硬化型丙烯酸系樹脂「Aronix」(註冊商標)UV3701塗佈成10μm的厚度,而製作轉印層,除此以外,以與實施例1相同的方式進行操作。結果轉印層大部分未轉印至基板而殘留於支撐體膜上,一部分轉印者與基板的密接力亦非常弱,而自基板剝離。 In the same manner as in Example 1, except that the UV-curable acrylic resin "Aronix" (registered trademark) UV3701 manufactured by Toagosei Co., Ltd. was applied to a thickness of 10 μm to prepare a transfer layer. operating. As a result, most of the transfer layer was not transferred to the substrate and remained on the support film, and the adhesion between the portion of the transferor and the substrate was also very weak, and was peeled off from the substrate.

[比較例2] [Comparative Example 2]

支撐體膜是使用:在作為環狀聚烯烴系樹脂的日本瑞翁股份有限公司製造的「ZEONOR FILM」(註冊商標)型號ZF14的厚度為100μm的膜的單面,藉由熱壓印進行賦形者。熱壓印是使用間距為5μm、高度為2.5μm的稜鏡形狀鎳電鑄模具。在模具溫度為180℃、壓力為2.0MPa的條件下,將模具按壓於膜並保持30秒鐘後,冷卻至100℃而解除壓力,並將支撐體膜脫模。裝置是使用米卡多科技股份有限公司製造的2噸真空加熱壓製機型號MKP-150TV-WH。 In the support film, a single surface of a film having a thickness of 100 μm of "ZEONOR FILM" (registered trademark) model ZF14 manufactured by Nippon Seychelles Co., Ltd., which is a cyclic polyolefin resin, is used by thermal imprinting. Shape. Hot embossing is a ruthenium-shaped nickel electroforming mold using a pitch of 5 μm and a height of 2.5 μm. Under the conditions of a mold temperature of 180 ° C and a pressure of 2.0 MPa, the mold was pressed against the film and held for 30 seconds, and then cooled to 100 ° C to release the pressure, and the support film was released. The device is a 2 ton vacuum heating press model MKP-150TV-WH manufactured by Micardo Technology Co., Ltd.

以濃度為20質量%將小西化學工業股份有限公司製造 的聚甲基倍半矽氧烷SR-13溶解於PGPE中,而製備矽氧烷溶膠。使用米卡薩股份有限公司製造的旋塗機型號1H-DX2,將所得的矽氧烷溶膠塗佈於支撐體膜的賦形了凹凸形狀的表面,在90℃下乾燥2分鐘而獲得轉印膜。 Manufactured by Xiaoxi Chemical Industry Co., Ltd. at a concentration of 20% by mass The polymethylsesquioxalate SR-13 was dissolved in PGPE to prepare a decyl sol. Using the spin coater model 1H-DX2 manufactured by Micasa Co., Ltd., the obtained decane sol was applied to the surface of the support film which was shaped into a concave-convex shape, and dried at 90 ° C for 2 minutes to obtain a transfer. membrane.

在準備作為基板的日本康寧股份有限公司製造的無鹼玻璃EAGLE2000(30mm×30mm、厚度為0.63mm)上,以轉印層表面與基板接觸的方式積層轉印膜。繼而在交聯轉印膜的支撐體膜面上積層金陽公司製造的型號F200作為緩衝材料,以玻璃基板/轉印膜/緩衝材料的構成,在壓製溫度為20℃、壓製壓力為1.38MPa下壓製10秒鐘。裝置是使用米卡多科技股份有限公司製造的2噸真空加熱壓製機型號MKP-150TV-WH。然後,在室溫下將作為支撐體的膜剝離,而獲得包含玻璃基板/轉印層的具凹凸構造的基板。將所得的積層體在250℃下進行熱處理,但凹凸形狀在熱處理中崩解而變得平坦。 The transfer film was laminated on the surface of the transfer layer in contact with the substrate on an alkali-free glass EAGLE 2000 (30 mm × 30 mm, thickness: 0.63 mm) manufactured by Japan Corning Co., Ltd. as a substrate. Then, a model F200 manufactured by Jinyang Co., Ltd. was laminated as a cushioning material on the support film surface of the crosslinked transfer film, and the composition was a glass substrate/transfer film/buffer material at a pressing temperature of 20 ° C and a pressing pressure of 1.38 MPa. Press down for 10 seconds. The device is a 2 ton vacuum heating press model MKP-150TV-WH manufactured by Micardo Technology Co., Ltd. Then, the film as a support was peeled off at room temperature, and a substrate having a textured structure including a glass substrate/transfer layer was obtained. The obtained laminate was heat-treated at 250 ° C, but the uneven shape was disintegrated in the heat treatment to be flat.

[比較例3] [Comparative Example 3]

在支撐體膜上塗佈矽氧烷並乾燥後,自所得的轉印膜的轉印層表面照射500mJ/cm2的UV,除此以外,以與比較例2相同的方式,獲得包含玻璃基板/轉印層的積層體。將所得的積層體在250℃下進行熱處理,但凹凸形狀在熱處理中崩解而變得平坦。 After the coating of the support film was coated with a siloxane and dried, the surface of the transfer layer of the obtained transfer film was irradiated with UV of 500 mJ/cm 2 , and a glass substrate including the glass substrate was obtained in the same manner as in Comparative Example 2. / laminate of the transfer layer. The obtained laminate was heat-treated at 250 ° C, but the uneven shape was disintegrated in the heat treatment to be flat.

[比較例4] [Comparative Example 4]

以與比較例2相同的方式,將轉印層轉印至基板後,自轉印層側照射500mJ/cm2的UV,而製成具凹凸構造的基板。將所得的 積層體在250℃下進行熱處理,但凹凸形狀在熱處理中崩解而變得平坦。 In the same manner as in Comparative Example 2, after the transfer layer was transferred to the substrate, UV of 500 mJ/cm 2 was irradiated from the side of the transfer layer to form a substrate having a concavo-convex structure. The obtained laminate was heat-treated at 250 ° C, but the uneven shape was disintegrated in the heat treatment to be flat.

[比較例5] [Comparative Example 5]

將矽氧烷溶膠設為:以按矽氧烷質量比計為0.5質量%包含三新化學工業股份有限公司製造的熱酸產生劑SI-100L(鋶系熱酸產生劑)者,除此以外,以與比較例2相同的方式,獲得包含玻璃基板/轉印層的積層體。將所得的積層體在250℃下進行熱處理,結果凹凸形狀在熱處理中崩解,而高度變低。 The pyrithione sol is prepared by including a thermal acid generator SI-100L (anthracene thermal acid generator) manufactured by Sanshin Chemical Industry Co., Ltd. in an amount of 0.5% by mass based on the mass ratio of the decane. In the same manner as in Comparative Example 2, a laminate including a glass substrate/transfer layer was obtained. The obtained laminate was heat-treated at 250 ° C, and as a result, the uneven shape was disintegrated in the heat treatment, and the height was lowered.

將實施例1~實施例34及比較例1~比較例5中所製作的轉印膜、交聯轉印膜、及具凹凸構造的基板的評價結果表示於表1、表2。 The evaluation results of the transfer film, the crosslinked transfer film, and the substrate having the uneven structure produced in Examples 1 to 34 and Comparative Examples 1 to 5 are shown in Tables 1 and 2.

1‧‧‧支撐體膜 1‧‧‧Supporting body membrane

2‧‧‧轉印層 2‧‧‧Transfer layer

3‧‧‧凹凸形狀的間距 3‧‧‧ spacing of concave and convex shapes

4‧‧‧凹凸形狀的凹部分的寬度 4‧‧‧Width of the concave portion of the concave-convex shape

5‧‧‧凹凸形狀的凹部分的深度 5‧‧‧Deep depth of the concave part of the concave and convex shape

6‧‧‧支撐體膜厚度 6‧‧‧Support film thickness

7‧‧‧轉印層厚度 7‧‧‧Transfer layer thickness

8‧‧‧殘膜厚度 8‧‧‧ residual film thickness

Claims (7)

一種轉印膜,其是將包含矽氧烷組成物的轉印層積層於表面具有凹凸形狀的支撐體膜而成者,且所述矽氧烷組成物包含光酸產生劑或光鹼產生劑。 A transfer film obtained by laminating a transfer layer comprising a composition of a decane to a support film having a concavo-convex shape on a surface thereof, and the siloxane composition comprises a photoacid generator or a photobase generator . 如申請專利範圍第1項所述之轉印膜,其中所述光酸產生劑為鋶系光酸產生劑。 The transfer film of claim 1, wherein the photoacid generator is an oxime photoacid generator. 如申請專利範圍第1項或第2項所述之轉印膜,其中在將轉印層總體設為100質量%時,所述轉印層中的所述光酸產生劑的含量為0.2質量%~5.0質量%。 The transfer film according to claim 1 or 2, wherein the photoacid generator in the transfer layer is 0.2 mass when the transfer layer is set to 100% by mass in total. %~5.0% by mass. 如申請專利範圍第1項至第3項中任一項所述之轉印膜,其中所述支撐體膜的凹凸形狀的代表間距為0.01μm~50μm、縱橫比為0.01~3。 The transfer film according to any one of claims 1 to 3, wherein the support film has a representative pitch of the uneven shape of 0.01 μm to 50 μm and an aspect ratio of 0.01 to 3. 一種交聯轉印膜,其是將包含矽氧烷組成物的交聯轉印層積層於具有凹凸形狀的支撐體膜而成者,且所述交聯轉印層的根據傅立葉轉換紅外線光譜而得的說明書中所記載的P1/P2的值為0.12以上。 A cross-linked transfer film obtained by laminating a cross-linking transfer layer comprising a siloxane composition to a support film having a concavo-convex shape, and the cross-linked transfer layer is subjected to Fourier transform infrared spectroscopy The value of P1/P2 described in the obtained specification is 0.12 or more. 如申請專利範圍第5項所述之交聯轉印膜,其中所述支撐體膜的凹凸形狀的代表間距為0.01μm~50μm、縱橫比為0.01~3。 The crosslinked transfer film according to claim 5, wherein the support film has a representative pitch of the uneven shape of 0.01 μm to 50 μm and an aspect ratio of 0.01 to 3. 一種具凹凸構造的基板,其是將包含矽氧烷組成物、且表面具有凹凸形狀的交聯轉印層積層於基板上而成者,且所述交聯轉印層的根據傅立葉轉換紅外線光譜而得的說明書中所記載的 P1/P2的值為0.12以上。 A substrate having a concavo-convex structure in which a crosslinked transfer layer comprising a rhodium oxide composition and having a concavo-convex shape on a surface is laminated on a substrate, and the cross-linked transfer layer is subjected to Fourier transform infrared spectroscopy And the description in the obtained manual The value of P1/P2 is 0.12 or more.
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