TW201504345A - Sheet-form resin composition, tape-integrated-sheet-form resin composition for back-surface polishing, dicing-tape-integrated-sheet-form resin composition, method for manufacturing semiconductor device, and semiconductor device - Google Patents

Sheet-form resin composition, tape-integrated-sheet-form resin composition for back-surface polishing, dicing-tape-integrated-sheet-form resin composition, method for manufacturing semiconductor device, and semiconductor device Download PDF

Info

Publication number
TW201504345A
TW201504345A TW103118492A TW103118492A TW201504345A TW 201504345 A TW201504345 A TW 201504345A TW 103118492 A TW103118492 A TW 103118492A TW 103118492 A TW103118492 A TW 103118492A TW 201504345 A TW201504345 A TW 201504345A
Authority
TW
Taiwan
Prior art keywords
sheet
resin composition
tape
semiconductor wafer
semiconductor device
Prior art date
Application number
TW103118492A
Other languages
Chinese (zh)
Inventor
Hiroyuki Hanazono
Naohide Takamoto
Kosuke Morita
Akihiro Fukui
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of TW201504345A publication Critical patent/TW201504345A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2463/00—Presence of epoxy resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2479/00—Presence of polyamine or polyimide
    • C09J2479/08—Presence of polyamine or polyimide polyimide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/141—Disposition
    • H01L2224/1418—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/14181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/27003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the layer preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
    • H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/731—Location prior to the connecting process
    • H01L2224/73101—Location prior to the connecting process on the same surface
    • H01L2224/73103—Bump and layer connectors
    • H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83193—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862—Heat curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9211—Parallel connecting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector

Abstract

A sheet-form resin composition used for sealing the interface between an adherend and a flip-chip-connected semiconductor element on the adherend, wherein the sheet-form resin composition has a weight decrease of no greater than 2% when the temperature is increased from 25 to 300 DEG C at a rate of 10 DEG C/min and a moisture absorptivity of no greater than 1% using the Karl Fischer method, and, relative to the entire sheet-shaped resin composition, contains 1-10 wt% of an organic acid having an acid dissociation constant of 3.0 to 5.0.

Description

片狀樹脂組合物、背面研磨用帶一體型片狀樹脂組合物、切晶帶一體型片狀樹脂組合物、半導體裝置之製造方法及半導體裝置 Sheet-like resin composition, tape-integrated sheet-like resin composition for back surface polishing, dicing tape-integrated sheet-like resin composition, method for producing semiconductor device, and semiconductor device

本發明係關於一種片狀樹脂組合物、背面研磨用帶一體型片狀樹脂組合物、切晶帶一體型片狀樹脂組合物、半導體裝置之製造方法及半導體裝置。 The present invention relates to a sheet-like resin composition, a tape-integrated sheet-like resin composition for back grinding, a dicing tape-integrated sheet-like resin composition, a method for producing a semiconductor device, and a semiconductor device.

先前，一直使用Au-Sn(焊錫)接合或Au-Au接合作為覆晶安裝中之被接著體與半導體元件之電性接合，但近年來，為了使成本降低等而研究有Au-Cu接合或Cu-Cu接合等以Cu(銅)作為電極之接合(例如參照專利文獻1)。 In the past, Au-Sn (solder) bonding or Au-Au bonding has been used as the electrical connection between the adherend and the semiconductor element in the flip chip mounting, but in recent years, in order to reduce the cost and the like, Au-Cu bonding or Cu (Cu) is bonded as an electrode such as Cu-Cu bonding (see, for example, Patent Document 1).

另一方面，近年來，對於覆晶安裝中之被接著體與半導體元件之間隙，就強化接合部(例如電極)或確保可靠性之觀點而言，進行樹脂密封(底填充)(例如參照專利文獻2)。 On the other hand, in recent years, for the gap between the adherend and the semiconductor element in flip chip mounting, resin sealing (underfill) is performed from the viewpoint of strengthening the joint (for example, an electrode) or ensuring reliability (for example, refer to the patent). Literature 2).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

專利文獻1：日本專利特開2012-204501號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2012-204501

專利文獻2：日本專利第4438973號說明書 Patent Document 2: Japanese Patent No. 4438973

然而，於使用銅電極之情形時，銅電極之接合需要較先前更高溫下之處理。因此，於進行底填充之情形時，對於用於底填充之材 料，亦要求高溫下之耐久性。 However, in the case of using a copper electrode, the bonding of the copper electrodes requires processing at a higher temperature than before. Therefore, for the case of underfilling, for the material used for underfilling The material also requires durability at high temperatures.

本發明係鑒於上述問題而完成者，其目的在於提供一種具有高溫耐久性之片狀樹脂組合物、具備該片狀樹脂組合物之背面研磨用帶一體型片狀樹脂組合物、具備該片狀樹脂組合物之切晶帶一體型片狀樹脂組合物、使用該片狀樹脂組合物之半導體裝置之製造方法、及使用該片狀樹脂組合物而製造之半導體裝置。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a sheet-like resin composition having high-temperature durability, and a sheet-like resin composition for back-grinding with the sheet-like resin composition, and the sheet-like resin composition. A dicing tape-integrated sheet-like resin composition for a resin composition, a method for producing a semiconductor device using the sheet-like resin composition, and a semiconductor device produced by using the sheet-like resin composition.

本案發明者等人為了解決上述先前之課題而對片狀樹脂組合物進行了研究。結果發現：若將由加熱引起之重量減少率設為特定範圍內，將吸濕率設為特定範圍內，且於特定範圍內含有特定之有機酸，則高溫下之耐久性優異，且可適宜地用作底填充用之片材，從而完成本發明。 The inventors of the present invention have studied the sheet-like resin composition in order to solve the above-mentioned problems. As a result, it has been found that when the weight loss rate due to heating is within a specific range, the moisture absorption rate is within a specific range, and a specific organic acid is contained within a specific range, durability at a high temperature is excellent, and it is preferable to suitably It is used as a sheet for underfill to complete the present invention.

即，本發明之片狀樹脂組合物之特徵在於：其係用於被接著體與覆晶連接於上述被接著體上之半導體元件之界面密封者，並且以10℃/min之升溫速度自25℃升溫至300℃時之重量減少率為2%以下，藉由卡氏法測得之吸濕率為1%以下，於相對於片狀樹脂組合物整體為1重量%以上且10重量%以下之範圍內含有酸解離常數為3.0以上且5.0以下之範圍內之有機酸。 That is, the sheet-like resin composition of the present invention is characterized in that it is used for an interface sealer of a semiconductor element to which a bonding body and a flip chip are bonded to the above-mentioned adherend, and is heated at a temperature of 10 ° C / min from 25 When the temperature is raised to 300 ° C, the weight loss rate is 2% or less, and the moisture absorption rate measured by the Karl Fischer method is 1% or less, and is 1% by weight or more and 10% by weight or less based on the total amount of the sheet-like resin composition. The range includes an organic acid having an acid dissociation constant of 3.0 or more and 5.0 or less.

根據上述構成，由於以10℃/min之升溫速度自25℃升溫至300℃時之重量減少率為2%以下，故而可抑制揮發成分，降低空隙之產生。因此，高溫下之耐久性優異。又，由於藉由卡氏法測得之吸濕率為1%以下，故而可抑制被接著體與片狀樹脂組合物間、或半導體元件與片狀樹脂組合物間之空隙之產生。 According to the above configuration, since the weight reduction rate when the temperature is raised from 25 ° C to 300 ° C at a temperature increase rate of 10 ° C / min is 2% or less, the volatile component can be suppressed and the generation of voids can be reduced. Therefore, the durability at high temperatures is excellent. In addition, since the moisture absorption rate measured by the Karl Fis method is 1% or less, it is possible to suppress the occurrence of voids between the object to be bonded and the sheet-like resin composition or between the semiconductor element and the sheet-like resin composition.

又，根據上述構成，於相對於片狀樹脂組合物整體為1重量%以 上且10重量%以下之範圍內含有酸解離常數為3.0以上且5.0以下之範圍內之有機酸。由於有機酸係使用酸解離常數為3.0以上者，故而樹脂組合物中之酸性度提高，而可抑制保存性之惡化等對物性之不良影響。又，由於有機酸係使用酸解離常數為5.0以下者，故而酸性度變得充分，可適宜地去除電極表面之氧化膜或防銹膜。又，由於相對於片狀樹脂組合物整體含有1重量%以上之酸解離常數為3.0以上且5.0以下之範圍內之有機酸，故而使有機酸充分地遍佈各處，而可適宜地去除表面之氧化膜或防銹膜。又，由於以10重量%以下含有該有機酸，故而可抑制保存性惡化等對物性之不良影響。 Moreover, according to the above configuration, it is 1% by weight based on the entire sheet-like resin composition. The organic acid having an acid dissociation constant of 3.0 or more and 5.0 or less is contained in the range of 10% by weight or less. Since the organic acid-based acid dissociation constant is 3.0 or more, the acidity in the resin composition is improved, and the adverse effect on the physical properties such as deterioration in preservability can be suppressed. In addition, since the organic acid-based acid dissociation constant is 5.0 or less, the acidity is sufficient, and the oxide film or the rust-preventing film on the electrode surface can be suitably removed. In addition, since the organic acid having an acid dissociation constant of 1% by weight or more or more in the range of 3.0 or more and 5.0 or less is contained in the entire sheet-like resin composition, the organic acid is sufficiently dispersed throughout the surface, and the surface can be suitably removed. Oxide film or rust preventive film. In addition, since the organic acid is contained in an amount of 10% by weight or less, adverse effects on physical properties such as deterioration in storage stability can be suppressed.

即，由於在相對於片狀樹脂組合物整體為1重量%以上且10重量%以下之範圍內含有酸解離常數為3.0以上且5.0以下之範圍內之有機酸，故而可適宜地去除電極表面之氧化物或防銹膜。 In other words, since the organic acid having an acid dissociation constant of 3.0 or more and 5.0 or less is contained in the range of 1% by weight or more and 10% by weight or less based on the entire sheet-like resin composition, the electrode surface can be suitably removed. Oxide or rust preventive film.

如此，根據上述構成，由加熱引起之重量減少率為上述數值範圍內，吸濕率為上述數值範圍內，且於上述數值範圍內含有酸解離常數為3.0以上且5.0以下之範圍內之有機酸，因此高溫下之耐久性優異，且可適宜地用作底填充用之片材。 According to the above configuration, the weight loss rate due to heating is within the above numerical range, the moisture absorption rate is within the above numerical range, and the organic acid having an acid dissociation constant of 3.0 or more and 5.0 or less in the above numerical range is contained. Therefore, it is excellent in durability at a high temperature, and can be suitably used as a sheet for underfill.

於上述構成中，較佳為具有上述被接著體、及上述半導體元件之至少一者包含銅之電極。若具有上述被接著體、及上述半導體元件之至少一者包含銅之電極，則變得需要較先前更高溫下之處理。然而，由於上述片狀樹脂組合物以10℃/min之升溫速度自25℃升溫至300℃時之重量減少率為2%以下，藉由卡氏法測得之吸濕率為1%以下，且於上述數值範圍內含有酸解離常數為3.0以上且5.0以下之範圍內之有機酸，故而高溫下之耐久性優異，且可適宜地用作底填充用之片材。因此，若使用上述片狀樹脂組合物，則可提高將銅電極用於被接著體與半導體元件之接合的覆晶型半導體裝置之可靠性。 In the above configuration, it is preferable that at least one of the adherend and the semiconductor element include an electrode of copper. When at least one of the above-described adherend and the semiconductor element includes an electrode of copper, processing at a higher temperature than before is required. However, the weight loss rate when the sheet-like resin composition is heated from 25 ° C to 300 ° C at a temperature increase rate of 10 ° C / min is 2% or less, and the moisture absorption rate measured by the Karl Fis method is 1% or less. Further, since the organic acid having an acid dissociation constant of 3.0 or more and 5.0 or less is contained in the above numerical range, it is excellent in durability at a high temperature, and can be suitably used as a sheet for underfill. Therefore, when the above-mentioned sheet-like resin composition is used, the reliability of using a copper electrode for a flip-chip type semiconductor device in which a bonding body and a semiconductor element are bonded can be improved.

於上述構成中，較佳為上述片狀樹脂組合物含有聚醯亞胺樹脂 與無機填料。若上述片狀樹脂組合物含有聚醯亞胺樹脂與無機填料，則可使耐熱性進一步提高。 In the above configuration, it is preferred that the sheet-like resin composition contains a polyimide resin. With inorganic fillers. When the sheet-like resin composition contains a polyimide resin and an inorganic filler, heat resistance can be further improved.

於上述構成中，較佳為上述片狀樹脂組合物含有聚醯亞胺樹脂、環氧樹脂、及無機填料。若上述片狀樹脂組合物含有聚醯亞胺樹脂、環氧樹脂、及無機填料，則可於具有環氧樹脂之形態下使耐熱性進一步提高。 In the above configuration, the sheet-like resin composition preferably contains a polyimide resin, an epoxy resin, and an inorganic filler. When the sheet-like resin composition contains a polyimide resin, an epoxy resin, and an inorganic filler, heat resistance can be further improved in the form of an epoxy resin.

又，為了解決上述課題，本發明之背面研磨用帶一體型片狀樹脂組合物之特徵在於：具備上述所記載之片狀樹脂組合物與背面研磨用帶，且於上述背面研磨用帶上設置有上述片狀樹脂組合物。 In addition, the sheet-like resin composition for back-polishing according to the present invention is characterized in that the sheet-like resin composition and the back-grinding tape described above are provided on the back-grinding tape. There is the above sheet-like resin composition.

又，為了解決上述課題，本發明之切晶帶一體型片狀樹脂組合物之特徵在於：具備上述所記載之片狀樹脂組合物與切晶帶，且於上述切晶帶上設置有上述片狀樹脂組合物。 Moreover, in order to solve the above-mentioned problem, the dicing tape-integrated sheet-like resin composition of the present invention includes the sheet-like resin composition and the dicing tape described above, and the sheet is provided on the dicing tape. Resin composition.

又，本發明之半導體裝置之製造方法之特徵在於：其係使用上述所記載之背面研磨用帶一體型片狀樹脂組合物的半導體裝置之製造方法，並且包括如下步驟：貼合步驟，其係使半導體晶圓之形成有連接構件之電路面與上述背面研磨用帶一體型片狀樹脂組合物之上述片狀樹脂組合物進行貼合；研磨步驟，其係對上述半導體晶圓之背面進行研磨；晶圓固定步驟，其係於背面研磨後之上述半導體晶圓之背面貼附切晶帶；剝離步驟，其係將上述背面研磨用帶剝離；切晶步驟，其係將上述半導體晶圓切晶而形成附片狀樹脂組合物之半導體晶片；拾取步驟，其係將上述附片狀樹脂組合物之半導體晶片自上述切晶帶剝離； 連接步驟，其係利用上述片狀樹脂組合物填充被接著體與上述半導體晶片間之空間，並且經由上述連接構件而將上述半導體晶片與上述被接著體電性連接；及硬化步驟，其係使上述片狀樹脂組合物硬化。 Moreover, the method for producing a semiconductor device according to the present invention is characterized in that the method for producing a semiconductor device using the tape-integrated sheet-like resin composition for back surface polishing described above includes the following steps: a bonding step The circuit surface on which the semiconductor wafer is formed with the connection member is bonded to the sheet-like resin composition of the back sheet-type integrated sheet-like resin composition, and the polishing step is to polish the back surface of the semiconductor wafer a wafer fixing step of attaching a dicing tape to a back surface of the semiconductor wafer after back grinding; a stripping step of stripping the back surface polishing strip; and a dicing step of cutting the semiconductor wafer Crystallizing to form a semiconductor wafer with a sheet-like resin composition; and a picking step of peeling off the semiconductor wafer of the above-mentioned sheet-like resin composition from the dicing tape; a connecting step of filling a space between the adherend and the semiconductor wafer by the sheet-like resin composition, electrically connecting the semiconductor wafer and the adherend via the connecting member; and a hardening step The above sheet-like resin composition is cured.

又，本發明之半導體裝置之製造方法之特徵在於：其係使用上述所記載之切晶帶一體型片狀樹脂組合物的半導體裝置之製造方法，並且包括如下步驟：貼合步驟，其係使形成有具有連接構件之電路面之半導體晶圓與上述切晶帶一體型片狀樹脂組合物之上述片狀樹脂組合物進行貼合；切晶步驟，其係將上述半導體晶圓切晶而形成附片狀樹脂組合物之半導體晶片；拾取步驟，其係將上述附片狀樹脂組合物之半導體晶片自上述切晶帶剝離；連接步驟，其係利用片狀樹脂組合物填充被接著體與上述半導體晶片間之空間，並且經由上述連接構件而將上述半導體晶片與上述被接著體電性連接；及硬化步驟，其係使上述片狀樹脂組合物硬化。 Moreover, the method for producing a semiconductor device according to the present invention is characterized in that the method of manufacturing a semiconductor device using the above-described diced tape-integrated sheet-like resin composition includes the following steps: a bonding step Bonding the above-mentioned sheet-like resin composition in which the semiconductor wafer having the circuit surface of the connection member and the diced tape-integrated sheet-like resin composition are bonded; and a dicing step of dicing the semiconductor wafer to form a semiconductor wafer with a sheet-like resin composition; a picking step of peeling off the semiconductor wafer of the sheet-like resin composition from the dicing tape; and a joining step of filling the adherend with the sheet-like resin composition and the above a space between the semiconductor wafers, and electrically connecting the semiconductor wafer to the adherend via the connecting member; and a curing step of curing the sheet-like resin composition.

上述片狀樹脂組合物以10℃/min之升溫速度自25℃升溫至300℃時之重量減少率為2%以下，藉由卡氏法測得之吸濕率為1%以下，且於上述數值範圍內含有酸解離常數為3.0以上且5.0以下之範圍內之有機酸。因此，上述片狀樹脂組合物由於具有耐熱性，故而可抑制因製造半導體裝置時之熱而使片狀樹脂組合物發生熱分解等情況，可抑制由釋氣引起之空隙之產生。 When the sheet-like resin composition is heated from 25 ° C to 300 ° C at a temperature increase rate of 10 ° C / min, the weight reduction rate is 2% or less, and the moisture absorption rate measured by the Karlsfeld method is 1% or less. The organic acid having an acid dissociation constant of 3.0 or more and 5.0 or less is contained in the numerical range. Therefore, since the sheet-like resin composition has heat resistance, it is possible to suppress thermal decomposition of the sheet-like resin composition due to heat during the production of the semiconductor device, and it is possible to suppress generation of voids due to outgassing.

又，本發明係關於一種使用上述所記載之片狀樹脂組合物所製造之半導體裝置。又，本發明係關於一種使用上述所記載之背面研磨 用帶一體型片狀樹脂組合物所製造之半導體裝置。又，本發明係關於一種使用上述所記載之切晶帶一體型片狀樹脂組合物所製造之半導體裝置。 Further, the present invention relates to a semiconductor device produced by using the above-mentioned sheet-like resin composition. Moreover, the present invention relates to the use of the back grinding described above. A semiconductor device manufactured by using an integrated sheet-like resin composition. Further, the present invention relates to a semiconductor device produced by using the above-described diced tape-integrated sheet-like resin composition.

上述片狀樹脂組合物以10℃/min之升溫速度自25℃升溫至300℃時之重量減少率為2%以下，藉由卡氏法測得之吸濕率為1%以下，且於上述數值範圍內含有酸解離常數為3.0以上且5.0以下之範圍內之有機酸。因此，上述片狀樹脂組合物由於具有耐熱性，故而可抑制因製造半導體裝置時之熱而使片狀樹脂組合物熱發生分解等情況，可抑制由釋氣引起之空隙之產生。其結果為，可提高半導體裝置之可靠性。 When the sheet-like resin composition is heated from 25 ° C to 300 ° C at a temperature increase rate of 10 ° C / min, the weight reduction rate is 2% or less, and the moisture absorption rate measured by the Karlsfeld method is 1% or less. The organic acid having an acid dissociation constant of 3.0 or more and 5.0 or less is contained in the numerical range. Therefore, since the sheet-like resin composition has heat resistance, it is possible to suppress heat generation of the sheet-like resin composition due to heat during the production of the semiconductor device, and it is possible to suppress generation of voids due to outgassing. As a result, the reliability of the semiconductor device can be improved.

根據本發明，可提供高溫下之耐久性優異且可適宜地用作底填充用之片材的片狀樹脂組合物、具備該片狀樹脂組合物之切晶帶一體型片狀樹脂組合物、使用該片狀樹脂組合物的半導體裝置之製造方法、及使用該片狀樹脂組合物而製造之半導體裝置。 According to the present invention, it is possible to provide a sheet-like resin composition which is excellent in durability at a high temperature and can be suitably used as a sheet for underfill, and a diced tape-integrated sheet-like resin composition comprising the sheet-like resin composition, A method of producing a semiconductor device using the sheet-like resin composition, and a semiconductor device produced using the sheet-like resin composition.

1‧‧‧背面研磨用帶 1‧‧‧Back grinding belt

1a‧‧‧基材 1a‧‧‧Substrate

1b‧‧‧黏著劑層 1b‧‧‧Adhesive layer

2‧‧‧片狀樹脂組合物 2‧‧‧Flake resin composition

3‧‧‧半導體晶圓 3‧‧‧Semiconductor wafer

3a‧‧‧半導體晶圓之電路面 3a‧‧‧Circuit surface of semiconductor wafer

3b‧‧‧半導體晶圓之與電路面相反之側之面 3b‧‧‧ Surface of the semiconductor wafer opposite to the circuit surface

4‧‧‧連接構件(凸塊) 4‧‧‧Connecting members (bumps)

5‧‧‧半導體晶片 5‧‧‧Semiconductor wafer

6‧‧‧被接著體 6‧‧‧Exposed body

7‧‧‧導通材料 7‧‧‧Conducting materials

10‧‧‧背面研磨用帶一體型片狀樹脂組合物 10‧‧‧Integral sheet-like resin composition for back grinding

11‧‧‧切晶帶 11‧‧‧Cutting Tape

11a‧‧‧基材 11a‧‧‧Substrate

11b‧‧‧黏著劑層 11b‧‧‧Adhesive layer

30‧‧‧半導體裝置 30‧‧‧Semiconductor device

41‧‧‧切晶帶 41‧‧‧Cutting Tape

41a‧‧‧基材 41a‧‧‧Substrate

41b‧‧‧黏著劑層 41b‧‧‧Adhesive layer

42‧‧‧片狀樹脂組合物 42‧‧‧Flake resin composition

43‧‧‧半導體晶圓 43‧‧‧Semiconductor wafer

44‧‧‧連接構件(凸塊) 44‧‧‧Connecting members (bumps)

45‧‧‧半導體晶片 45‧‧‧Semiconductor wafer

46‧‧‧被接著體 46‧‧‧Exposed body

47‧‧‧導通材料 47‧‧‧Conducting materials

50‧‧‧切晶帶一體型片狀樹脂組合物 50‧‧‧Cutting Tape Integrated Sheet Resin Composition

60‧‧‧半導體裝置 60‧‧‧Semiconductor device

圖1係本發明之一實施形態之背面研磨用帶一體型片狀樹脂組合物之剖面模式圖。 Fig. 1 is a schematic cross-sectional view showing a tape-integrated sheet-like resin composition for back grinding according to an embodiment of the present invention.

圖2A係用以說明使用有圖1所示之背面研磨用帶一體型片狀樹脂組合物的半導體裝置之製造方法的圖。 2A is a view for explaining a method of manufacturing a semiconductor device using the tape-integrated sheet-like resin composition for back-grinding shown in FIG. 1.

圖2B係用以說明使用有圖1所示之背面研磨用帶一體型片狀樹脂組合物的半導體裝置之製造方法的圖。 2B is a view for explaining a method of manufacturing a semiconductor device using the tape-integrated sheet-like resin composition for back-grinding shown in FIG. 1.

圖2C係用以說明使用有圖1所示之背面研磨用帶一體型片狀樹脂組合物的半導體裝置之製造方法的圖。 2C is a view for explaining a method of manufacturing a semiconductor device using the tape-integrated sheet-like resin composition for back grinding shown in Fig. 1.

圖2D係用以說明使用有圖1所示之背面研磨用帶一體型片狀樹脂組合物的半導體裝置之製造方法的圖。 2D is a view for explaining a method of manufacturing a semiconductor device using the tape-integrated sheet-like resin composition for back grinding shown in FIG. 1.

圖2E係用以說明使用有圖1所示之背面研磨用帶一體型片狀樹脂 組合物的半導體裝置之製造方法的圖。 Figure 2E is a view showing the use of the integrated sheet-like resin for back grinding shown in Figure 1. A diagram of a method of fabricating a semiconductor device of a composition.

圖2F係用以說明使用有圖1所示之背面研磨用帶一體型片狀樹脂組合物的半導體裝置之製造方法的圖。 2F is a view for explaining a method of manufacturing a semiconductor device using the tape-integrated sheet-like resin composition for back grinding shown in FIG. 1.

圖2G係用以說明使用有圖1所示之背面研磨用帶一體型片狀樹脂組合物的半導體裝置之製造方法的圖。 2G is a view for explaining a method of manufacturing a semiconductor device using the tape-integrated sheet-like resin composition for back grinding shown in Fig. 1.

圖3係本發明之另一實施形態之切晶帶一體型片狀樹脂組合物之剖面模式圖。 Fig. 3 is a schematic cross-sectional view showing a diced tape-integrated sheet-like resin composition according to another embodiment of the present invention.

圖4A係用以說明使用有圖3所示之切晶帶一體型片狀樹脂組合物的半導體裝置之製造方法的圖。 4A is a view for explaining a method of manufacturing a semiconductor device using the diced tape-integrated sheet-like resin composition shown in FIG. 3.

圖4B係用以說明使用有圖3所示之切晶帶一體型片狀樹脂組合物的半導體裝置之製造方法的圖。 4B is a view for explaining a method of manufacturing a semiconductor device using the dicing tape-integrated sheet-like resin composition shown in FIG. 3.

圖4C係用以說明使用有圖3所示之切晶帶一體型片狀樹脂組合物的半導體裝置之製造方法的圖。 4C is a view for explaining a method of manufacturing a semiconductor device using the diced tape-integrated sheet-like resin composition shown in FIG. 3.

圖4D係用以說明使用有圖3所示之切晶帶一體型片狀樹脂組合物的半導體裝置之製造方法的圖。 4D is a view for explaining a method of manufacturing a semiconductor device using the diced tape-integrated sheet-like resin composition shown in FIG. 3.

以下，基於本發明之實施形態並參照圖式進行說明。以下，首先對在背面研磨用帶上設置有片狀樹脂組合物的背面研磨用帶一體型片狀樹脂組合物進行說明。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the following, the tape-integrated sheet-like resin composition for back surface polishing in which the sheet-like resin composition is provided on the back surface polishing belt will be described.

<背面研磨用帶一體型片狀樹脂組合物> <Integral sheet-like resin composition for back grinding>

圖1係本發明之一實施形態之背面研磨用帶一體型片狀樹脂組合物之剖面模式圖。本實施形態之背面研磨用帶一體型片狀樹脂組合物10係於背面研磨用帶1上積層有片狀樹脂組合物2之構造。背面研磨用帶1係於基材1a上積層有黏著劑層1b之構造。片狀樹脂組合物2係積層於背面研磨用帶1之黏著劑層1b上。再者，片狀樹脂組合物2亦可不積層於背面研磨用帶1之整個面，而以與半導體晶圓3(參照圖2A)貼合所 需之尺寸進行設置即可。 Fig. 1 is a schematic cross-sectional view showing a tape-integrated sheet-like resin composition for back grinding according to an embodiment of the present invention. The tape-integrated sheet-like resin composition 10 for back-polishing of the present embodiment has a structure in which a sheet-like resin composition 2 is laminated on the back-grinding tape 1. The back-grinding tape 1 has a structure in which an adhesive layer 1b is laminated on the substrate 1a. The sheet-like resin composition 2 is laminated on the adhesive layer 1b of the back-grinding tape 1. Further, the sheet-like resin composition 2 may be laminated on the entire surface of the back-grinding tape 1 to be bonded to the semiconductor wafer 3 (see FIG. 2A). The required size can be set.

以下，對在背面研磨用帶1上積層有片狀樹脂組合物2的背面研磨用帶一體型片狀樹脂組合物10進行說明，但片狀樹脂組合物2亦可單獨使用。例如片狀樹脂組合物2可貼合於背面研磨用帶1之黏著劑層1b上而使用。又，片狀樹脂組合物2可貼合於半導體晶圓上之後，將另一面貼合於背面研磨用帶1之黏著劑層1b上而使用。 In the following description, the sheet-like resin composition 10 for back surface polishing in which the sheet-like resin composition 2 is laminated on the back surface polishing tape 1 will be described. However, the sheet-like resin composition 2 may be used alone. For example, the sheet-like resin composition 2 can be used by being bonded to the adhesive layer 1b of the back-grinding tape 1. Moreover, after the sheet-like resin composition 2 can be bonded to the semiconductor wafer, the other surface is bonded to the adhesive layer 1b of the back-grinding tape 1 and used.

<片狀樹脂組合物> <Flaky resin composition>

片狀樹脂組合物2係用於被接著體6與覆晶連接於被接著體6上之半導體晶片5之界面密封(參照圖2G)。 The sheet-like resin composition 2 is used for sealing the interface between the adherend 6 and the semiconductor wafer 5 on which the flip chip is bonded to the adherend 6 (see FIG. 2G).

又，片狀樹脂組合物2以10℃/min之升溫速度自25℃升溫至300℃時之重量減少率為2%以下，更佳為1.0%以下。又，上述重量減少率越小越好，例如為0.05%以上且0.5%以下。由於以10℃/min之升溫速度自25℃升溫至300℃時之重量減少率為2%以下，故而可抑制揮發成分，降低空隙之產生。因此，高溫下之耐久性優異。 Further, when the sheet-like resin composition 2 is heated from 25 ° C to 300 ° C at a temperature increase rate of 10 ° C / min, the weight reduction rate is 2% or less, and more preferably 1.0% or less. Further, the weight reduction rate is preferably as small as possible, and is, for example, 0.05% or more and 0.5% or less. Since the weight reduction rate when the temperature is raised from 25 ° C to 300 ° C at a temperature increase rate of 10 ° C / min is 2% or less, the volatile component can be suppressed and the generation of voids can be reduced. Therefore, the durability at high temperatures is excellent.

片狀樹脂組合物2藉由卡氏法測得之吸濕率為1%以下，較佳為0.8%以下，更佳為0.5%以下。又，上述吸濕率越小越好，例如為0.05%以上。由於片狀樹脂組合物2藉由卡氏法測得之吸濕率為1%以下，故而可抑制被接著體6與片狀樹脂組合物2間、或半導體晶片5與片狀樹脂組合物2間之空隙之產生。本發明之藉由卡氏法測得之吸濕率係於實施例中所記載之條件下測得之值。 The moisture absorption rate of the sheet-like resin composition 2 measured by the Karl Fis method is 1% or less, preferably 0.8% or less, more preferably 0.5% or less. Further, the moisture absorption rate is preferably as small as possible, and is, for example, 0.05% or more. Since the moisture absorption rate of the sheet-like resin composition 2 measured by the Karl Fis method is 1% or less, it is possible to suppress the between the adherend 6 and the sheet-like resin composition 2, or the semiconductor wafer 5 and the sheet-like resin composition 2 The gap between the two. The moisture absorption rate measured by the Karlsfeld method of the present invention is a value measured under the conditions described in the examples.

片狀樹脂組合物2於相對於片狀樹脂組合物整體為1重量%以上且10重量%以下之範圍內含有酸解離常數為3.0以上且5.0以下之範圍內之有機酸。上述有機酸之上述含量較佳為1.5重量%以上且6重量%以下。由於有機酸係使用酸解離常數為3.0以上者，故而樹脂組合物中之酸性度提高，可抑制保存性之惡化等對物性之不良影響。又，由於有機酸係使用酸解離常數為5.0以下者，故而酸性度變得充分，可適 宜地去除電極表面之氧化膜或防銹膜。又，由於以相對於片狀樹脂組合物整體為1重量%以上含有酸解離常數為3.0以上且5.0以下之範圍內之有機酸，故而使有機酸充分地遍佈各處，而可適宜地去除表面之氧化膜或防銹膜。又，由於以10重量%以下含有，故而可抑制保存性惡化等對物性之不良影響。 The sheet-like resin composition 2 contains an organic acid having an acid dissociation constant of 3.0 or more and 5.0 or less in a range of 1% by weight or more and 10% by weight or less based on the total amount of the sheet-like resin composition. The content of the above organic acid is preferably 1.5% by weight or more and 6% by weight or less. Since the acid dissociation constant of the organic acid is 3.0 or more, the acidity in the resin composition is improved, and adverse effects on physical properties such as deterioration of preservability can be suppressed. In addition, since the acid dissociation constant of the organic acid system is 5.0 or less, the acidity is sufficient, and it is suitable. It is preferable to remove the oxide film or the anti-rust film on the surface of the electrode. In addition, since the organic acid having an acid dissociation constant of 3.0 or more and 5.0 or less is contained in an amount of 1% by weight or more based on the entire sheet-like resin composition, the organic acid is sufficiently dispersed throughout the surface, and the surface can be appropriately removed. Oxide film or anti-rust film. In addition, since it is contained in an amount of 10% by weight or less, it is possible to suppress adverse effects on physical properties such as deterioration in storage stability.

即，由於在相對於片狀樹脂組合物2整體為1重量%以上且10重量%以下之範圍內含有酸解離常數為3.0以上且5.0以下之範圍內之有機酸，故而可適宜地去除電極表面之氧化物或防銹膜。 In other words, since the organic acid having an acid dissociation constant of 3.0 or more and 5.0 or less is contained in the range of 1% by weight or more and 10% by weight or less based on the entire sheet-like resin composition 2, the electrode surface can be suitably removed. Oxide or anti-rust film.

如此，根據片狀樹脂組合物2，由加熱引起之重量減少率為上述數值範圍內，吸濕率為上述數值範圍內，且於上述數值範圍內含有酸解離常數為3.0以上且5.0以下之範圍內之有機酸，因此高溫下之耐久性優異，且可適宜地用作底填充用之片材。 In the sheet-like resin composition 2, the weight loss rate by heating is within the above numerical range, the moisture absorption rate is within the above numerical range, and the acid dissociation constant is in the range of 3.0 or more and 5.0 or less in the above numerical range. The organic acid in the inside is excellent in durability at a high temperature, and can be suitably used as a sheet for underfill.

作為上述有機酸，只要為酸解離常數為3.0以上且5.0以下之範圍內者，則並無特別限定，例如可列舉：鄰甲氧基苯甲酸(4.09)、間甲氧基苯甲酸(4.09)、對甲氧基苯甲酸(4.4)、二苯乙醇酸(3.1)、乙醯水楊酸(3.5)、2-苯氧基苯甲酸(3.53)、甲酸(3.75)、抗壞血酸(4.17)、苯甲酸(4.2)、螢光素(4.31)、樟腦酸(4.71)、乙酸(4.75)等。再者，括號內表示各有機酸之酸解離常數。 The organic acid is not particularly limited as long as it has an acid dissociation constant of 3.0 or more and 5.0 or less, and examples thereof include o-methoxybenzoic acid (4.09) and m-methoxybenzoic acid (4.09). , p-methoxybenzoic acid (4.4), diphenyl glycolic acid (3.1), acetyl salicylic acid (3.5), 2-phenoxybenzoic acid (3.53), formic acid (3.75), ascorbic acid (4.17), benzene Formic acid (4.2), luciferin (4.31), camphoric acid (4.71), acetic acid (4.75), and the like. Further, the acid dissociation constant of each organic acid is indicated in parentheses.

片狀樹脂組合物2只要為由加熱引起之重量減少率為上述數值範圍內、吸濕率為上述數值範圍內、且於上述數值範圍內含有酸解離常數為3.0以上且5.0以下之範圍內之有機酸者，則其形成材料並無特別限定，可列舉：聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚矽氧樹脂、丙烯酸系樹脂、氟樹脂、環氧樹脂、胺基甲酸酯樹脂、橡膠樹脂等。 The sheet-like resin composition 2 is in a range in which the weight loss rate by heating is within the above numerical range, the moisture absorption rate is within the above numerical range, and the acid dissociation constant is in the range of 3.0 or more and 5.0 or less in the above numerical range. In the case of an organic acid, the material for formation is not particularly limited, and examples thereof include a polyimine resin, a polyamidoximine resin, a polyoxyl resin, an acrylic resin, a fluororesin, an epoxy resin, and an aminocarboxylic acid. Ester resin, rubber resin, and the like.

片狀樹脂組合物2較佳為具有絕緣性。 The sheet-like resin composition 2 is preferably insulating.

上述聚醯亞胺樹脂通常可藉由將作為其前驅物之聚醯胺酸進行醯亞胺化(脫水縮合)而獲得。作為將聚醯胺酸進行醯亞胺化之方法， 例如可採用：先前公知之加熱醯亞胺化法、共沸脫水法、化學醯亞胺化法等。其中，較佳為加熱醯亞胺化法。於採用加熱醯亞胺化法之情形時，為了防止聚醯亞胺樹脂之由氧化引起之劣化，較佳為於氮氣環境下或真空中等惰性環境下進行加熱處理。 The above polyimine resin can be usually obtained by ruthenium iodization (dehydration condensation) of polyamic acid as its precursor. As a method for carrying out hydrazine imidization of polylysine, For example, a previously known heated hydrazine imidation method, azeotropic dehydration method, chemical hydrazine imidation method, or the like can be employed. Among them, a heated hydrazine imidation method is preferred. In the case of the heat-treated imidization method, in order to prevent deterioration of the polyimide resin by oxidation, it is preferred to carry out heat treatment under a nitrogen atmosphere or an inert atmosphere such as vacuum.

上述聚醯胺酸可以使酸二酐與二胺成為實質上等莫耳比之方式添加至適當選擇之溶劑中，並於有機溶劑中進行反應而獲得。 The polyamic acid can be obtained by adding an acid dianhydride and a diamine to a solvent of a suitable solvent in a substantially equimolar ratio and reacting it in an organic solvent.

作為上述酸二酐之具體例，可列舉：均苯四甲酸二酐、2,3,6,7-萘四羧酸二酐、3,3',4,4'-聯苯四羧酸二酐、1,2,5,6-萘四羧酸二酐、2,2',3,3'-聯苯四羧酸二酐、3,3',4,4'-二苯甲酮四羧酸二酐、2,2-雙(3,4-二羧基苯基)丙烷二酐、3,4,9,10-苝四羧酸二酐、雙(3,4-二羧基苯基)丙烷二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐、1,1-雙(3,4-二羧基苯基)乙烷二酐、雙(2,3-二羧基苯基)甲烷二酐、雙(3,4-二羧基苯基)乙烷二酐、氧二鄰苯二甲酸二酐、雙(3,4-二羧基苯基)碸二酐、對伸苯基雙(偏苯三甲酸單酯酸酐)、伸乙基雙(偏苯三甲酸單酯酸酐)、雙酚A雙(偏苯三甲酸單酯酸酐)、六氟丙烷二鄰苯二甲酸酐。其中，就使由加熱引起之重量減少率、吸濕率成為上述特定範圍內之觀點而言，較佳為六氟丙烷二鄰苯二甲酸酐、氧二鄰苯二甲酸酐。 Specific examples of the acid dianhydride include pyromellitic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, and 3,3',4,4'-biphenyltetracarboxylic acid Anhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 2,2',3,3'-biphenyltetracarboxylic dianhydride, 3,3',4,4'-benzophenone IV Carboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 3,4,9,10-decanetetracarboxylic dianhydride, bis(3,4-dicarboxyphenyl) Propane dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride, 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydride, bis (2,3- Dicarboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)ethane dianhydride, oxydiphthalic dianhydride, bis(3,4-dicarboxyphenyl)ruthenic anhydride, pair Phenyl bis(trimellitic acid monoester anhydride), ethyl bis(trimellitic acid monoester anhydride), bisphenol A bis (trimellitic acid monoester anhydride), hexafluoropropane diphthalate Anhydride. In particular, hexafluoropropane diphthalic anhydride or oxydiphthalic anhydride is preferred from the viewpoint that the weight loss rate and the moisture absorption rate due to heating are within the above specific range.

又，作為與上述酸二酐反應之二胺之具體例，可列舉：4,4'-二胺基二苯基丙烷、4,4'-二胺基二苯基甲烷、聯苯胺、3,3'-二氯聯苯胺、4,4'-二胺基二苯硫醚、3,3'-二胺基二苯基碸、4,4'-二胺基二苯基碸、4,4'-二胺基二苯醚、3,3'-二胺基二苯醚、3,4'-二胺基二苯醚、1,5-二胺基萘、4,4'-二胺基二苯基二乙基矽烷、4,4'-二胺基二苯基矽烷、4,4'-二胺基二苯基乙基氧化膦、4,4'-二胺基二苯基N-甲基胺、4,4'-二胺基二苯基N-苯胺、1,4-二胺基苯(對苯二胺)、1,3-二胺基苯、1,2-二胺基苯、2,2-雙(3-胺基-4-羥基苯基)六氟丙烷、雙(胺基丙基)-四甲基二矽氧烷。其中，就使由加熱引起之重量減少率、吸濕率成為上述特 定範圍內之觀點而言，較佳為2,2-雙(3-胺基-4-羥基苯基)六氟丙烷、雙(胺基丙基)-四甲基二矽氧烷。 Further, specific examples of the diamine which is reacted with the acid dianhydride include 4,4'-diaminodiphenylpropane, 4,4'-diaminodiphenylmethane, benzidine, and 3, 3'-Dichlorobenzidine, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenylanthracene, 4,4'-diaminodiphenylanthracene, 4,4 '-Diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 1,5-diaminonaphthalene, 4,4'-diamino Diphenyldiethyldecane, 4,4'-diaminodiphenylnonane, 4,4'-diaminodiphenylethylphosphine oxide, 4,4'-diaminodiphenyl N- Methylamine, 4,4'-diaminodiphenyl N-aniline, 1,4-diaminobenzene (p-phenylenediamine), 1,3-diaminobenzene, 1,2-diamine Benzene, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, bis(aminopropyl)-tetramethyldioxane. Among them, the weight reduction rate and the moisture absorption rate caused by heating become the above-mentioned special From the viewpoint of a predetermined range, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane or bis(aminopropyl)-tetramethyldioxane is preferred.

使上述酸二酐與二胺進行反應時所使用之有機溶劑只要為不與酸二酐及二胺反應且對反應成分中之至少一者、較佳為兩者、及作為產物之聚醯胺酸作為溶劑可發揮作用之有機溶劑(有機極性溶劑)即可，並無特別限定。 The organic solvent used in the reaction between the acid dianhydride and the diamine is a polyamine which does not react with the acid dianhydride and the diamine and which is at least one of the reaction components, preferably both, and as a product. The organic solvent (organic polar solvent) in which the acid functions as a solvent is not particularly limited.

作為使上述酸酐與上述二胺進行反應時之溶劑，可列舉的有：N,N-二甲基乙醯胺、N-甲基-2-吡咯啶酮、N,N-二甲基甲醯胺、環戊酮等。該等可單獨使用，亦可混合複數種使用。又，為了調整原材料或樹脂之溶解性，亦可適當混合甲苯、或二甲苯等非極性溶劑而使用。 Examples of the solvent for reacting the above acid anhydride with the above diamine include N,N-dimethylacetamide, N-methyl-2-pyrrolidone, and N,N-dimethylformamidine. Amine, cyclopentanone, and the like. These may be used singly or in combination of plural kinds. Further, in order to adjust the solubility of the raw material or the resin, a nonpolar solvent such as toluene or xylene may be appropriately mixed and used.

為了有效地進行醯亞胺化，上述聚醯胺酸溶液中亦可添加硬化促進劑(醯亞胺化觸媒)。作為上述硬化促進劑之具體例，可使用：脂肪族三級胺、芳香族三級胺、雜環式三級胺等。該等中，可尤佳地使用選自雜環式三級胺者。具體而言，可較佳地使用：喹啉、異喹啉、β-甲基吡啶、吡啶等。更具體而言，可列舉：1-乙基-3,5-二甲氧基羰基-4-(2-硝基苯基)-1,4-二氫吡啶。作為上述硬化促進劑之添加量，可以相對於聚醯胺酸1莫耳以莫耳比計為0.2~2.0倍、進而較佳為0.3~1.5倍之比率使用。若添加量過少，則有醯亞胺化率小於適宜範圍之情形，若添加量過多，則硬化加速，變得難以於支持體上流延。又，只要為不對物性產生影響之程度，則亦可併用乙醯丙酮等醯亞胺化延遲劑。 In order to carry out the hydrazine imidation efficiently, a hardening accelerator (an imidization catalyst) may be added to the polyamic acid solution. Specific examples of the curing accelerator include aliphatic tertiary amines, aromatic tertiary amines, and heterocyclic tertiary amines. Among these, those selected from heterocyclic tertiary amines can be preferably used. Specifically, quinoline, isoquinoline, β-picoline, pyridine, or the like can be preferably used. More specifically, 1-ethyl-3,5-dimethoxycarbonyl-4-(2-nitrophenyl)-1,4-dihydropyridine can be mentioned. The amount of the hardening accelerator to be added may be 0.2 to 2.0 times, more preferably 0.3 to 1.5 times the molar ratio of the polyglycine 1 molar ratio. When the amount added is too small, the ruthenium imidization ratio is less than the appropriate range, and if the amount is too large, the hardening accelerates and it becomes difficult to cast on the support. Further, as long as it does not affect the physical properties, a ruthenium imidization retardant such as acetamidineacetone may be used in combination.

亦可使片狀樹脂組合物2中含有環氧樹脂。作為上述環氧樹脂，只要為通常用作接著劑組合物者，則並無特別限定，例如可使用：雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三 羥基苯基甲烷型、四酚基乙烷型等二官能環氧樹脂或多官能環氧樹脂，或乙內醯脲型、異氰尿酸三縮水甘油酯型或縮水甘油胺型等之環氧樹脂。該等可單獨使用，或併用兩種以上而使用。 The sheet-like resin composition 2 may also contain an epoxy resin. The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, and hydrogenation can be used. Bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, anthraquinone type, phenol novolac type, o-cresol novolac type, three A difunctional epoxy resin or a polyfunctional epoxy resin such as a hydroxyphenylmethane type or a tetraphenol ethane type, or an epoxy resin such as a carbendazim type, a triglycidyl isocyanurate type or a glycidylamine type . These may be used singly or in combination of two or more.

亦可使片狀樹脂組合物2中含有無機填料。作為上述無機填料，例如可列舉：二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、碳化矽、氮化矽等陶瓷類，鋁、銅、銀、金、鎳、鉻、鉛、錫、鋅、鈀、焊錫等金屬或合金類，其他包含碳等之各種無機粉末等。然而，就使片狀樹脂組合物2具有絕緣性之觀點而言，較佳為使用絕緣性者。上述無機填料之含量相對於全部固形物成分，較佳為10重量%以上且80重量%以下，更佳為30重量%以上且60重量%以下。藉由以10重量%以上含有上述無機填料，可調整片狀樹脂組合物2之線膨脹係數，藉由以80重量%以下含有，可提高無機填料之分散性，可使塗敷變得容易。 The sheet-like resin composition 2 may also contain an inorganic filler. Examples of the inorganic filler include ceramics such as cerium oxide, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, cerium oxide, cerium carbide, and cerium nitride, and aluminum, copper, silver, gold, nickel, and chromium. Metals or alloys such as lead, tin, zinc, palladium, and solder, and other inorganic powders such as carbon. However, from the viewpoint of imparting insulation to the sheet-like resin composition 2, it is preferred to use insulation. The content of the inorganic filler is preferably 10% by weight or more and 80% by weight or less, and more preferably 30% by weight or more and 60% by weight or less based on the total solid content. When the inorganic filler is contained in an amount of 10% by weight or more, the linear expansion coefficient of the sheet-like resin composition 2 can be adjusted, and when it is contained in an amount of 80% by weight or less, the dispersibility of the inorganic filler can be improved, and coating can be facilitated.

片狀樹脂組合物2例如可藉由如下方式製作。首先，製作包含上述聚醯胺酸與視需要添加之硬化促進劑的溶液。其次，視需要一面加熱一面攪拌，其後藉由投入至水中而使醯亞胺樹脂沈澱。繼而，藉由將上述醯亞胺樹脂、視需要之上述有機酸、上述環氧樹脂、上述無機填料再次溶解於有機溶劑中而製成清漆，將其進行塗佈、乾燥，而獲得片狀樹脂組合物2。 The sheet-like resin composition 2 can be produced, for example, in the following manner. First, a solution containing the above polyamic acid and a hardening accelerator added as needed is prepared. Next, the mixture is heated while stirring as needed, and then the quinone imine resin is precipitated by being introduced into water. Then, the quinone imine resin, the above-mentioned organic acid, the above epoxy resin, and the above inorganic filler are redissolved in an organic solvent to prepare a varnish, which is applied and dried to obtain a sheet-like resin. Composition 2.

再者，亦可藉由將上述聚醯胺酸、視需要之上述有機酸、上述環氧樹脂、上述無機填料溶解於有機溶劑中而製成清漆，將其進行塗佈、乾燥，而獲得片狀樹脂組合物2。 Furthermore, the polyamic acid, the above-mentioned organic acid, the above epoxy resin, and the above inorganic filler may be dissolved in an organic solvent to prepare a varnish, which may be applied and dried to obtain a sheet. Resin composition 2.

<背面研磨用帶> <Back grinding belt>

背面研磨用帶1係於基材1a上積層有黏著劑層1b之構造。以下，按照基材及黏著劑層之順序進行說明。 The back-grinding tape 1 has a structure in which an adhesive layer 1b is laminated on the substrate 1a. Hereinafter, the description will be given in the order of the substrate and the adhesive layer.

(基材) (substrate)

基材1a可使用具有紫外線穿透性者，其係成為背面研磨用帶1之強度母體者。例如可列舉：低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚合聚丙烯、嵌段共聚合聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴，乙烯-乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺基甲酸酯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯，聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯硫醚、芳香族聚醯胺(紙)、玻璃、玻璃布、氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素系樹脂、聚矽氧樹脂、金屬(箔)、紙等。 As the base material 1a, those having ultraviolet ray permeability can be used, and this is a strength matrix of the back-grinding tape 1. For example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolypropylene, poly Polyolefins such as butene and polymethylpentene, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymerization Polyesters such as ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyphthalate Amine, polyetheretherketone, polyimine, polyetherimide, polyamine, wholly aromatic polyamine, polyphenylene sulfide, aromatic polyamine (paper), glass, glass cloth, fluororesin , polyvinyl chloride, polyvinylidene chloride, cellulose resin, polyoxyxylene resin, metal (foil), paper, and the like.

又，作為基材1a之材料，可列舉上述樹脂之交聯體等聚合物。上述塑膠膜可於未延伸之狀態下使用，亦可使用視需要實施有單軸或雙軸之延伸處理者。 Moreover, as a material of the base material 1a, a polymer such as a crosslinked body of the above resin may be mentioned. The plastic film may be used in an unextended state, or may be subjected to a uniaxial or biaxial stretching process as needed.

對於基材1a之表面，為了提高與鄰接層之密接性、保持性等，可實施慣用之表面處理，例如鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、離子化放射線處理等化學或物理處理，利用底塗劑(例如下述黏著物質)之塗佈處理。上述基材1a可適當選擇使用同種或異種者，視需要可使用將複數種摻合而成者。 For the surface of the substrate 1a, in order to improve adhesion to the adjacent layer, retention, and the like, conventional surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high-voltage shock exposure, ionizing radiation treatment, or the like may be performed. The treatment is carried out by a coating treatment using a primer (for example, an adhesive described below). The substrate 1a may be appropriately selected from the same species or a heterogeneous type, and a plurality of types may be used as needed.

基材1a之厚度並無特別限制，可適當決定，通常為5~200μm左右。 The thickness of the substrate 1a is not particularly limited and can be appropriately determined, and is usually about 5 to 200 μm.

作為用以形成黏著劑層1b之黏著劑，並無特別限制，例如可使用：丙烯酸系黏著劑、橡膠系黏著劑等通常之感壓性黏著劑。作為上述感壓性黏著劑，就半導體晶圓或玻璃等避忌污染之電子零件利用超純水或醇等有機溶劑之潔淨洗淨性等方面而言，較佳為以丙烯酸系聚合物作為基礎聚合物之丙烯酸系黏著劑。 The adhesive for forming the pressure-sensitive adhesive layer 1b is not particularly limited, and for example, a usual pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be used. As the pressure-sensitive adhesive, it is preferable to use an acrylic polymer as a base polymerization in terms of cleanliness of an organic solvent such as ultrapure water or alcohol in terms of avoidance of contamination of electronic components such as a semiconductor wafer or glass. Acrylic adhesive for the substance.

作為上述丙烯酸系聚合物，例如可列舉使用一種或兩種以上之(甲基)丙烯酸烷基酯(例如甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基之碳數為1~30、尤其是碳數為4~18之直鏈狀或支鏈狀之烷基酯等)及(甲基)丙烯酸環烷基酯(例如環戊酯、環己酯等)作為單體成分之丙烯酸系聚合物等。再者，所謂(甲基)丙烯酸酯係指丙烯酸酯及/或甲基丙烯酸酯，本發明之(甲基)均為相同含義。 Examples of the acrylic polymer include one or two or more alkyl (meth)acrylates (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, and second butyl). Ester, tert-butyl ester, amyl ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, decyl ester, decyl ester, isodecyl ester, undecyl ester, The alkyl group of a dodecyl ester, a tridecyl ester, a tetradecyl ester, a hexadecyl ester, an octadecyl ester or an eicosyl ester has a carbon number of 1 to 30, especially a carbon number. An acrylic polymer such as a linear or branched alkyl ester of 4 to 18 or a cycloalkyl (meth)acrylate (for example, cyclopentyl ester or cyclohexyl ester) is used as a monomer component. In addition, the (meth)acrylate means an acrylate and/or a methacrylate, and (meth) of this invention has the same meaning.

對於上述丙烯酸系聚合物，以凝集力、耐熱性等之改質為目的，視需要亦可使其包含與可與上述(甲基)丙烯酸烷基酯或環烷基酯共聚合之其他單體成分所對應之單元。作為此種單體成分，例如可列舉：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸羧基戊酯、伊康酸、順丁烯二酸、反丁烯二酸、丁烯酸等含羧基單體；順丁烯二酸酐、伊康酸酐等酸酐單體；(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、(甲基)丙烯酸(4-羥基甲基環己基)甲酯等含羥基單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基單體；丙烯醯基磷酸2-羥基乙酯等含磷酸基單體；丙烯醯胺、丙烯腈等。該等可共聚之單體成分可使用一種或兩種以上。該等可共聚之單體之使用量較佳為全部單體成分之40重量%以下。 The acrylic polymer may be modified to have a cohesive force, a heat resistance, or the like, and may further contain other monomers copolymerizable with the above alkyl (meth)acrylate or cycloalkyl ester. The unit corresponding to the ingredient. Examples of such a monomer component include acrylic acid, methacrylic acid, hydroxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, and fumaric acid. a carboxyl group-containing monomer such as crotonic acid; an acid anhydride monomer such as maleic anhydride or itaconic acid anhydride; 2-hydroxyethyl (meth)acrylate; 2-hydroxypropyl (meth)acrylate; (methyl) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate a hydroxyl group-containing monomer such as (4-hydroxymethylcyclohexyl)methyl (meth)acrylate; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)propenylamine-2-methylpropanesulfonate a sulfonic acid group-containing monomer such as acid, (meth) acrylamide, propanesulfonic acid, sulfopropyl (meth) acrylate, (meth) propylene phthaloxy naphthalene sulfonic acid; 2-hydroxyethyl acrylate Such as a phosphate-containing monomer; acrylamide, acrylonitrile, and the like. These copolymerizable monomer components may be used alone or in combination of two or more. The amount of the copolymerizable monomers used is preferably 40% by weight or less based on the total of the monomer components.

進而，上述丙烯酸系聚合物為了進行交聯，視需要亦可含有多官能性單體等作為共聚用單體成分。作為此種多官能性單體，例如可 列舉：己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、(甲基)丙烯酸胺基甲酸酯等。該等多官能性單體亦可使用一種或兩種以上。就黏著特性等方面而言，多官能性單體之使用量較佳為全部單體成分之30重量%以下。 Further, the acrylic polymer may contain a polyfunctional monomer or the like as a monomer component for copolymerization in order to carry out crosslinking. As such a polyfunctional monomer, for example, Listed: hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate , pentaerythritol di(meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate Polyester (meth) acrylate, (meth) acrylate urethane, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less based on the total of the monomer components in terms of adhesion characteristics and the like.

上述丙烯酸系聚合物可藉由將單一單體或兩種以上之單體混合物供於聚合而獲得。聚合可藉由溶液聚合、乳化聚合、塊狀聚合、懸浮聚合等中之任意方式而進行。就防止對潔淨之被接著體之污染等方面而言，較佳為低分子量物質之含量較小。就該方面而言，丙烯酸系聚合物之數量平均分子量較佳為30萬以上，進而較佳為40萬~300萬左右。 The above acrylic polymer can be obtained by supplying a single monomer or a mixture of two or more kinds of monomers to polymerization. The polymerization can be carried out by any of solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, and the like. In terms of preventing contamination of the cleaned adherend, etc., it is preferred that the content of the low molecular weight substance is small. In this respect, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, and more preferably about 400,000 to 3,000,000.

又，上述黏著劑中，為了提高作為基礎聚合物之丙烯酸系聚合物等之數量平均分子量，亦可適當採用外部交聯劑。作為外部交聯方法之具體方法，可列舉添加聚異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺系交聯劑等所謂交聯劑進行反應之方法。於使用外部交聯劑之情形時，其使用量係根據與欲交聯之基礎聚合物之平衡性、進而作為黏著劑之使用用途而適當決定。一般而言，相對於上述基礎聚合物100重量份，較佳為調配約5重量份以下，進而較佳為0.1~5重量份。進而，黏著劑中，除上述成分以外，視需要亦可使用先前公知之各種黏著賦予劑、抗老化劑等添加劑。 Further, in the above-mentioned adhesive, in order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, an external crosslinking agent may be suitably used. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent. In the case of using an external crosslinking agent, the amount used is appropriately determined depending on the balance with the base polymer to be crosslinked, and further as the use of the adhesive. In general, it is preferably formulated in an amount of about 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, based on 100 parts by weight of the base polymer. Further, in the adhesive, in addition to the above components, additives such as various conventionally known adhesion-imparting agents and anti-aging agents may be used as needed.

黏著劑層1b可利用放射線硬化型黏著劑而形成。放射線硬化型黏著劑可藉由紫外線等放射線之照射而增大交聯度，從而容易地降低其黏著力。作為上述放射線，可列舉：X射線、紫外線、電子束、α射線、β射線、中子射線等。 The adhesive layer 1b can be formed using a radiation hardening type adhesive. The radiation-curable adhesive can increase the degree of crosslinking by irradiation with radiation such as ultraviolet rays, thereby easily reducing the adhesion. Examples of the radiation include X-rays, ultraviolet rays, electron beams, α rays, β rays, and neutron rays.

放射線硬化型黏著劑可無特別限制地使用具有碳-碳雙鍵等放射線硬化性官能基且顯示出黏著性者。作為放射線硬化型黏著劑，例如可例示向上述丙烯酸系黏著劑、橡膠系黏著劑等通常之感壓性黏著劑中調配有放射線硬化性之單體成分或低聚物成分的添加型放射線硬化型黏著劑。 The radiation-curable adhesive can be used without any particular limitation, and a radiation curable functional group such as a carbon-carbon double bond is used and exhibits adhesiveness. As the radiation-curable adhesive, for example, an addition type radiation curing type in which a radiation-curable monomer component or an oligomer component is blended into a general pressure-sensitive adhesive such as the above-mentioned acrylic pressure-sensitive adhesive or rubber-based pressure-sensitive adhesive can be exemplified. Adhesive.

作為所調配之放射線硬化性之單體成分，例如可列舉：胺基甲酸酯低聚物、(甲基)丙烯酸胺基甲酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。又，放射線硬化性之低聚物成分可列舉：胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等之各種低聚物，適宜為分子量為100~30000左右之範圍者。放射線硬化性之單體成分或低聚物成分之調配量可根據上述黏著劑層之種類而適當決定可降低黏著劑層之黏著力之量。一般而言，相對於構成黏著劑之丙烯酸系聚合物等基礎聚合物100重量份，例如為5~500重量份，較佳為40~150重量份程度。 Examples of the radiation curable monomer component to be blended include a urethane oligomer, a (meth)acrylic acid urethane, a trimethylolpropane tri(meth)acrylate, and the like. Methyl hydroxymethane tetra(meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate Ester, 1,4-butanediol di(meth)acrylate, and the like. Further, examples of the radiation curable oligomer component include various oligomers such as a urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based polymers, and a molecular weight of 100 is suitable. ~30000 or so range. The amount of the radiation-hardening monomer component or the oligomer component can be appropriately determined depending on the kind of the above-mentioned adhesive layer to reduce the adhesion of the adhesive layer. In general, it is, for example, 5 to 500 parts by weight, preferably 40 to 150 parts by weight, per 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.

又，作為放射線硬化型黏著劑，除上述所說明之添加型放射線硬化性黏著劑以外，亦可列舉使用在聚合物側鏈或主鏈中或主鏈末端具有碳-碳雙鍵者作為基礎聚合物的內在型放射線硬化性黏著劑。內在型放射線硬化型黏著劑無需含有作為低分子成分之低聚物成分等，或含量不多，因此低聚物成分等不會經時性地於黏著劑層中移動，而可形成層構造穩定之黏著劑層，故而較佳。 Further, as the radiation-curable adhesive, in addition to the above-described additive-type radiation-curable adhesive, a base polymerization having a carbon-carbon double bond in a polymer side chain or a main chain or a main chain terminal may be used. Intrinsic radiation curable adhesive for matter. Since the intrinsic type radiation curable adhesive does not need to contain an oligomer component or the like as a low molecular component, or has a small content, the oligomer component or the like does not move over the adhesive layer over time, and the layer structure can be stabilized. The adhesive layer is preferred.

關於上述具有碳-碳雙鍵之基礎聚合物，可無特別限制地使用具有碳-碳雙鍵且具有黏著性者。作為此種基礎聚合物，較佳為以丙烯酸系聚合物作為基本骨架者。作為丙烯酸系聚合物之基本骨架，可列舉上述所例示之丙烯酸系聚合物。 Regarding the above-mentioned base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, an acrylic polymer is preferably used as a basic skeleton. The basic skeleton of the acrylic polymer may, for example, be an acrylic polymer exemplified above.

向上述丙烯酸系聚合物中導入碳-碳雙鍵之方法並無特別限制，可採用各種方法，但分子設計對於將碳-碳雙鍵導入至聚合物側鏈中而言較為容易。例如可列舉如下方法：預先使具有官能基之單體與丙烯酸系聚合物共聚合之後，使其與具有可與該官能基反應之官能基及碳-碳雙鍵之化合物在維持碳-碳雙鍵之放射線硬化性之情況下進行縮合或加成反應。 The method of introducing the carbon-carbon double bond into the above acrylic polymer is not particularly limited, and various methods can be employed. However, molecular design is easy for introducing a carbon-carbon double bond into the polymer side chain. For example, a method of copolymerizing a monomer having a functional group with an acrylic polymer in advance and maintaining a carbon-carbon double with a compound having a functional group reactive with the functional group and a carbon-carbon double bond may be mentioned. The condensation or addition reaction is carried out in the case of radiation hardening of the bond.

作為該等官能基之組合之例，可列舉：羧酸基與環氧基、羧酸基與氮丙啶基、羥基與異氰酸酯基等。於該等官能基之組合中，就追蹤反應之容易性方面而言，適宜為羥基與異氰酸酯基之組合。又，只要為藉由該等官能基之組合而生成上述具有碳-碳雙鍵之丙烯酸系聚合物之組合，則官能基可位於丙烯酸系聚合物與上述化合物之任一側，於上述較佳之組合中，適宜為丙烯酸系聚合物具有羥基且上述化合物具有異氰酸酯基之情形。於該情形時，作為具有碳-碳雙鍵之異氰酸酯化合物，例如可列舉：甲基丙烯醯基異氰酸酯、異氰酸2-甲基丙烯醯氧基乙酯、異氰酸間異丙烯基-α,α-二甲基苄酯等。又，作為丙烯酸系聚合物，可使用將上述所例示之含羥基單體或2-羥基乙基乙烯醚、4-羥基丁基乙烯醚、二乙二醇單乙烯醚之醚系化合物等共聚合而成者。 Examples of combinations of such functional groups include a carboxylic acid group, an epoxy group, a carboxylic acid group and an aziridine group, a hydroxyl group and an isocyanate group. Among the combinations of such functional groups, a combination of a hydroxyl group and an isocyanate group is preferred in terms of easiness of tracking the reaction. Further, as long as a combination of the above-mentioned functional groups is used to form the above-mentioned acrylic polymer having a carbon-carbon double bond, the functional group may be located on either side of the acrylic polymer and the above compound, preferably in the above-mentioned preferred In the combination, it is preferred that the acrylic polymer has a hydroxyl group and the above compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacrylonitrile isocyanate, 2-methylpropenyloxyethyl isocyanate, and iso-isopropenyl-α-isophthalate. , α-dimethylbenzyl ester and the like. Further, as the acrylic polymer, copolymerization of the above-exemplified hydroxyl group-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether or the like can be used. Founder.

上述內在型放射線硬化型黏著劑可單獨使用上述具有碳-碳雙鍵之基礎聚合物(尤其是丙烯酸系聚合物)，亦可以不使特性惡化之程度調配上述放射線硬化性之單體成分或低聚物成分。放射線硬化性之低聚物成分等通常相對於基礎聚合物100重量份為30重量份之範圍內，較佳為0~10重量份之範圍。 The above-mentioned intrinsic radiation curable adhesive can be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, or can be blended with the above-mentioned radiation curable monomer component or low without deteriorating the properties. Polymer component. The radiation curable oligomer component or the like is usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, per 100 parts by weight of the base polymer.

上述放射線硬化型黏著劑中，於藉由紫外線等進行硬化之情形時含有光聚合起始劑。作為光聚合起始劑，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2- 羥基苯丙酮、1-羥基環己基苯基酮等α-酮醇系化合物；甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉基丙烷-1等苯乙酮系化合物；安息香乙醚、安息香異丙醚、茴香偶姻甲醚等安息香醚系化合物；苯偶醯二甲基縮酮等縮酮系化合物；2-萘磺醯氯等芳香族磺醯氯系化合物；1-苯酮-1,1-丙烷二酮-2-(O-乙氧基羰基)肟等光活性肟系化合物；二苯甲酮、苯甲醯苯甲酸、3,3'-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物；噻噸酮、2-氯噻噸酮、2-甲基噻噸酮、2,4-二甲基噻噸酮、異丙基噻噸酮、2,4-二氯噻噸酮、2,4-二乙基噻噸酮、2,4-二異丙基噻噸酮等噻噸酮系化合物；樟腦醌；鹵化酮；醯基氧化膦；醯基磷酸酯等。光聚合起始劑之調配量相對於構成黏著劑之丙烯酸系聚合物等基礎聚合物100重量份，例如約為0.05~20重量份。 The radiation curable adhesive contains a photopolymerization initiator when it is cured by ultraviolet rays or the like. As the photopolymerization initiator, for example, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)one, α-hydroxy-α,α'-dimethylacetophenone can be exemplified. 2-methyl-2- An α-keto alcohol compound such as hydroxypropiophenone or 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethyl Acetophenone-based compounds such as oxyacetophenone and 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinopropane-1; benzoin ethyl ether, benzoin isopropyl ether, fennel A benzoin ether compound such as a methyl ether; a ketal compound such as benzoin dimethyl ketal; an aromatic sulfonium chloride compound such as 2-naphthalene sulfonium chloride; and 1-benzophenone-1,1-propanedione a photoactive quinone compound such as -2-(O-ethoxycarbonyl) hydrazine; benzophenone, benzamidine benzoic acid, 3,3'-dimethyl-4-methoxybenzophenone, etc. An benzophenone compound; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothiazide a thioxanthone compound such as ketone, 2,4-diethylthioxanthone or 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; fluorenylphosphine oxide; thiol phosphate. The amount of the photopolymerization initiator to be added is, for example, about 0.05 to 20 parts by weight based on 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.

再者，於照射放射線時引起由氧氣所致之硬化阻礙之情形時，較理想為藉由任意方法對放射線硬化型之黏著劑層1b之表面阻隔氧氣(空氣)。例如可列舉：利用分隔件被覆上述黏著劑層1b之表面之方法；或於氮氣環境中進行紫外線等放射線之照射之方法等。 Further, in the case where the hardening by oxygen is caused when the radiation is irradiated, it is preferable that the surface of the radiation-curable adhesive layer 1b is blocked by oxygen (air) by any method. For example, a method of covering the surface of the above-mentioned adhesive layer 1b with a separator, or a method of irradiating radiation such as ultraviolet rays in a nitrogen atmosphere may be mentioned.

黏著劑層1b之厚度並無特別限定，就防止晶片切斷面之缺損、或保持接著層之固定之同時實現等觀點而言，較佳為約1~50μm。較佳為2~30μm，進而較佳為5~25μm。 The thickness of the adhesive layer 1b is not particularly limited, and is preferably about 1 to 50 μm from the viewpoint of preventing the wafer cut surface from being damaged or maintaining the adhesion of the adhesive layer. It is preferably 2 to 30 μm, and more preferably 5 to 25 μm.

<背面研磨用帶一體型片狀樹脂組合物之製造方法> <Method for Producing Tape-Integrated Sheet-Shaped Resin Composition for Back Grinding>

本實施之形態之背面研磨用帶一體型片狀樹脂組合物10例如可藉由預先分別製作背面研磨用帶1及片狀樹脂組合物2，最後將該等貼合而製成。具體而言，可依據如下順序進行製作。 In the back sheet polishing-integrated sheet-like resin composition 10 of the present embodiment, for example, the back surface polishing tape 1 and the sheet-shaped resin composition 2 can be produced in advance, and finally bonded together. Specifically, the production can be performed in the following order.

首先，基材1a可藉由先前公知之製膜方法而製膜。作為該製膜方法，例如可例示：壓延製膜法、於有機溶劑中之流延法、於密閉系統中之吹脹擠出法、T字模擠出法、共擠出法、乾式層壓法等。 First, the substrate 1a can be formed into a film by a conventionally known film forming method. Examples of the film forming method include a calender film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method. Wait.

其次，調製黏著劑層形成用之黏著劑組合物。於黏著劑組合物中，調配入如黏著劑層之項中所說明之樹脂或添加物等。將所調製之黏著劑組合物塗佈於基材1a上而形成塗佈膜後，將該塗佈膜於特定條件下進行乾燥(視需要進行加熱交聯)，而形成黏著劑層1b。作為塗佈方法，並無特別限定，例如可列舉：輥式塗敷、網版塗敷、凹版塗敷等。又，作為乾燥條件，例如於乾燥溫度80~150℃、乾燥時間0.5~5分鐘之範圍內進行。又，亦可於分隔件上塗佈黏著劑組合物而形成塗佈膜後，於上述乾燥條件下使塗佈膜乾燥而形成黏著劑層1b。其後，於基材1a上將黏著劑層1b與分隔件一併貼合。藉此，製作出具備基材1a及黏著劑層1b之背面研磨用帶1。再者，作為背面研磨用帶1，只要至少具備基材及黏著劑層即可，具有分隔件等其他元件之情形亦稱為背面研磨用帶1。 Next, an adhesive composition for forming an adhesive layer is prepared. In the adhesive composition, a resin or an additive as described in the item of the adhesive layer is formulated. After the prepared adhesive composition is applied onto the substrate 1a to form a coating film, the coated film is dried under specific conditions (heat-crosslinking if necessary) to form an adhesive layer 1b. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions are carried out, for example, at a drying temperature of 80 to 150 ° C and a drying time of 0.5 to 5 minutes. Further, after the adhesive composition is applied onto the separator to form a coating film, the coating film is dried under the above drying conditions to form the adhesive layer 1b. Thereafter, the adhesive layer 1b and the separator are bonded together on the substrate 1a. Thereby, the back surface polishing tape 1 which has the base material 1a and the adhesive layer 1b is manufactured. Further, the back surface polishing tape 1 may be provided with at least a base material and an adhesive layer, and may be referred to as a back surface polishing tape 1 as another member such as a separator.

片狀樹脂組合物2可如上所述般製作。 The sheet-like resin composition 2 can be produced as described above.

繼而，以片狀樹脂組合物2與背面研磨用帶1之黏著劑層1b成為貼合面之方式將兩者貼合。貼合可藉由例如壓接而進行。此時，層壓溫度並無特別限定，例如較佳為30~50℃，更佳為35~45℃。又，線壓並無特別限定，例如較佳為0.1~20kgf/cm，更佳為1~10kgf/cm。藉此，獲得本實施形態之背面研磨用帶一體型片狀樹脂組合物10。 Then, the sheet-like resin composition 2 and the adhesive layer 1b of the back-grinding tape 1 are bonded to each other so as to be a bonding surface. The bonding can be performed by, for example, crimping. In this case, the laminating temperature is not particularly limited, and is, for example, preferably 30 to 50 ° C, more preferably 35 to 45 ° C. Further, the linear pressure is not particularly limited, and is, for example, preferably 0.1 to 20 kgf/cm, more preferably 1 to 10 kgf/cm. Thus, the tape-integrated sheet-like resin composition 10 for back grinding of the present embodiment is obtained.

(使用背面研磨用帶一體型片狀樹脂組合物的半導體裝置之製造方法) (Manufacturing method of a semiconductor device using an integrated sheet-like resin composition for back grinding)

其次，對使用背面研磨用帶一體型片狀樹脂組合物10的半導體裝置之製造方法進行說明。圖2A~圖2G係用以說明使用如圖1所示之背面研磨用帶一體型片狀樹脂組合物的半導體裝置之製造方法的圖。 Next, a method of manufacturing a semiconductor device using the integrated sheet-like resin composition 10 for back surface polishing will be described. 2A to 2G are views for explaining a method of manufacturing a semiconductor device using the tape-integrated sheet-like resin composition for back surface polishing as shown in Fig. 1 .

具體而言，該半導體裝置之製造方法包括：貼合步驟，其係使半導體晶圓3之形成有連接構件4之電路面3a與背面研磨用帶一體型片狀樹脂組合物10之片狀樹脂組合物2進行貼合；研磨步驟，其係對半 導體晶圓3之背面3b進行研磨；晶圓固定步驟，其係於背面研磨後之半導體晶圓3之背面3b貼附切晶帶11；剝離步驟，其係將背面研磨用帶1剝離；切晶步驟，其係將半導體晶圓3切晶而形成附片狀樹脂組合物2之半導體晶片5；拾取步驟，其係將附片狀樹脂組合物2之半導體晶片5自切晶帶11剝離；連接步驟，其係利用片狀樹脂組合物2填充被接著體6與半導體晶片5間之空間並且經由連接構件4而將半導體晶片5與被接著體6電性連接；及硬化步驟，其係使片狀樹脂組合物2硬化。 Specifically, the method of manufacturing a semiconductor device includes a bonding step of forming a circuit board 3a of the connection member 4 and a sheet-like resin of the back sheet-like integrated sheet-like resin composition 10 of the semiconductor wafer 3. Composition 2 is laminated; the grinding step is half-paired The back surface 3b of the conductor wafer 3 is polished; the wafer fixing step is performed by attaching the dicing tape 11 to the back surface 3b of the semiconductor wafer 3 after the back surface polishing; and the stripping step is performed by peeling the back surface polishing tape 1; a crystallization step of dicing the semiconductor wafer 3 to form the semiconductor wafer 5 with the sheet-like resin composition 2; and a pick-up step of peeling off the semiconductor wafer 5 of the sheet-like resin composition 2 from the dicing tape 11; a joining step of filling a space between the adherend 6 and the semiconductor wafer 5 with the sheet-like resin composition 2 and electrically connecting the semiconductor wafer 5 and the adherend 6 via the connecting member 4; and a hardening step, which is The sheet-like resin composition 2 is hardened.

<貼合步驟> <Fitting step>

於貼合步驟中，使半導體晶圓3之形成有連接構件4之電路面3a與背面研磨用帶一體型片狀樹脂組合物10之片狀樹脂組合物2進行貼合(參照圖2A)。 In the bonding step, the circuit surface 3a of the semiconductor wafer 3 on which the connection member 4 is formed is bonded to the sheet-like resin composition 2 of the back sheet-type integrated sheet-like resin composition 10 (see FIG. 2A).

半導體晶圓3之電路面3a上形成有複數個連接構件4(參照圖2A)。連接構件4之高度視用途而定，一般為15~100μm程度。當然，半導體晶圓3中之各個連接構件4之高度可相同亦可不同。 A plurality of connection members 4 are formed on the circuit surface 3a of the semiconductor wafer 3 (see FIG. 2A). The height of the connecting member 4 depends on the application, and is generally about 15 to 100 μm. Of course, the heights of the respective connecting members 4 in the semiconductor wafer 3 may be the same or different.

較佳為形成於半導體晶圓3表面之連接構件4之高度X(μm)與片狀樹脂組合物2之厚度Y(μm)滿足下述關係。 It is preferable that the height X (μm) of the connecting member 4 formed on the surface of the semiconductor wafer 3 and the thickness Y (μm) of the sheet-like resin composition 2 satisfy the following relationship.

0.5≦Y/X≦2 0.5≦Y/X≦2

藉由使連接構件4之高度X(μm)與片狀樹脂組合物2之厚度Y(μm)滿足上述關係，可充分地填充半導體晶片5與被接著體6間之空間，並且可防止片狀樹脂組合物2自該空間過量滲出，可防止片狀樹脂組合物2對半導體晶片5之污染等。再者，於各連接構件4之高度不同之情形時，以最高之連接構件4之高度為基準。 By satisfying the above relationship between the height X (μm) of the connecting member 4 and the thickness Y (μm) of the sheet-like resin composition 2, the space between the semiconductor wafer 5 and the adherend 6 can be sufficiently filled, and the sheet shape can be prevented. The resin composition 2 is excessively oozing out from the space, and contamination of the semiconductor wafer 5 by the sheet-like resin composition 2 can be prevented. Furthermore, in the case where the heights of the respective connecting members 4 are different, the height of the highest connecting member 4 is used as a reference.

首先，將任意地設置於背面研磨用帶一體型片狀樹脂組合物10之片狀樹脂組合物2上之分隔件適當地剝離，如圖2A所示，使半導體晶圓3之形成有連接構件4之電路面3a與片狀樹脂組合物2對向，並使片狀樹脂組合物2與半導體晶圓3貼合(安裝)。 First, the separator which is arbitrarily provided on the sheet-like resin composition 2 of the back sheet-type integral sheet-like resin composition 10 is appropriately peeled off, and as shown in FIG. 2A, the semiconductor wafer 3 is formed with a connecting member. The circuit surface 3a of the fourth surface is opposed to the sheet-like resin composition 2, and the sheet-like resin composition 2 is bonded (mounted) to the semiconductor wafer 3.

貼合之方法並無特別限定，較佳為藉由壓接而進行之方法。壓接之壓力較佳為0.1MPa以上，更佳為0.2MPa以上。若壓接之壓力為0.1MPa以上，則可良好地將半導體晶圓3之電路面3a之凹凸埋入。又，壓接之壓力之上限並無特別限定，較佳為1MPa以下，更佳為0.5MPa以下。 The method of bonding is not particularly limited, and is preferably a method of performing pressure bonding. The pressure of the crimping is preferably 0.1 MPa or more, more preferably 0.2 MPa or more. When the pressure of the pressure bonding is 0.1 MPa or more, the unevenness of the circuit surface 3a of the semiconductor wafer 3 can be satisfactorily embedded. Further, the upper limit of the pressure of the pressure bonding is not particularly limited, but is preferably 1 MPa or less, and more preferably 0.5 MPa or less.

貼合之溫度較佳為60℃以上，更佳為70℃以上。若貼合之溫度為60℃以上，則片狀樹脂組合物2之黏度降低，可無空隙地填充半導體晶圓3之凹凸。又，貼合之溫度較佳為100℃以下，更佳為80℃以下。若貼合之溫度為100℃以下，則變得可在抑制片狀樹脂組合物2之硬化反應之情況下進行貼合。 The temperature for bonding is preferably 60 ° C or higher, more preferably 70 ° C or higher. When the bonding temperature is 60° C. or more, the viscosity of the sheet-like resin composition 2 is lowered, and the unevenness of the semiconductor wafer 3 can be filled without voids. Further, the bonding temperature is preferably 100 ° C or lower, more preferably 80 ° C or lower. When the bonding temperature is 100° C. or lower, the bonding can be performed while suppressing the curing reaction of the sheet-like resin composition 2 .

貼合較佳為於減壓下進行，例如為1000Pa以下，較佳為500Pa以下。下限並無特別限定，例如為1Pa以上。 The bonding is preferably carried out under reduced pressure, and is, for example, 1000 Pa or less, preferably 500 Pa or less. The lower limit is not particularly limited and is, for example, 1 Pa or more.

<研磨步驟> <grinding step>

於研磨步驟中，對半導體晶圓3之與電路面3a相反之側之面(即背面)3b進行研磨(參照圖2B)。作為用於半導體晶圓3之背面研磨之薄型加工機並無特別限定，例如可例示研磨機(背面研磨機)、研磨墊等。又，亦可藉由蝕刻等化學方法進行背面研磨。背面研磨係進行至半導體晶圓3成為所需厚度(例如700~25μm)為止。 In the polishing step, the surface (ie, the back surface) 3b of the semiconductor wafer 3 opposite to the circuit surface 3a is polished (see FIG. 2B). The thin processing machine used for the back surface polishing of the semiconductor wafer 3 is not particularly limited, and examples thereof include a polishing machine (back grinding machine), a polishing pad, and the like. Further, back grinding may be performed by a chemical method such as etching. The back grinding is performed until the semiconductor wafer 3 has a desired thickness (for example, 700 to 25 μm).

<晶圓固定步驟> <Wafer fixing step>

於研磨步驟後，於半導體晶圓3之背面3b貼附切晶帶11(參照圖2C)。再者，切晶帶11具有在基材11a上積層有黏著劑層11b之構造。作為基材11a及黏著劑層11b，可使用背面研磨用帶1之基材1a及黏著劑層1b之項中所示之成分及製法而適宜地製作。 After the polishing step, the dicing tape 11 is attached to the back surface 3b of the semiconductor wafer 3 (see FIG. 2C). Further, the dicing tape 11 has a structure in which an adhesive layer 11b is laminated on the substrate 11a. The base material 11a and the pressure-sensitive adhesive layer 11b can be suitably produced by using the components and the production methods shown in the items of the base material 1a and the pressure-sensitive adhesive layer 1b of the back surface polishing tape 1.

<剝離步驟> <Peeling step>

繼而，將背面研磨用帶1剝離(參照圖2D)。藉此，成為片狀樹脂組合物2露出之狀態。 Then, the back-grinding tape 1 is peeled off (refer FIG. 2D). Thereby, the sheet-like resin composition 2 is exposed.

將背面研磨用帶1剝離時，於黏著劑層1b具有放射線硬化性之情形時，藉由對黏著劑層1b照射放射線使黏著劑層1b硬化，而可容易地進行剝離。放射線之照射量係考慮所使用之放射線之種類或黏著劑層之硬化度等而適當設定即可。 When the back surface polishing tape 1 is peeled off, when the adhesive layer 1b has radiation curability, the adhesive layer 1b is irradiated with radiation to cure the adhesive layer 1b, whereby peeling can be easily performed. The amount of radiation to be irradiated may be appropriately set in consideration of the type of radiation to be used, the degree of hardening of the adhesive layer, and the like.

<切晶步驟> <Cutting step>

於切晶步驟中，如圖2E所示將半導體晶圓3及片狀樹脂組合物2切晶而形成經切晶之附片狀樹脂組合物2之半導體晶片5。切晶係根據常法自半導體晶圓3之貼合有片狀樹脂組合物2之電路面3a而進行。例如可採用切入至切晶帶11為止之稱為全切之切斷方式等。作為本步驟中所使用之切晶裝置，並無特別限定，可使用先前公知者。 In the dicing step, the semiconductor wafer 3 and the sheet-like resin composition 2 are diced as shown in FIG. 2E to form a semiconductor wafer 5 of the diced sheet-like resin composition 2. The dicing system is carried out by laminating the circuit surface 3a of the sheet-like resin composition 2 from the semiconductor wafer 3 in accordance with a conventional method. For example, a cutting method called full cutting, which is cut into the dicing tape 11, or the like can be used. The dicing apparatus used in this step is not particularly limited, and those known in the art can be used.

再者，繼切晶步驟之後，進行切晶帶11之延伸之情形時，該延伸可使用先前公知之延伸裝置進行。 Further, in the case where the extension of the dicing tape 11 is carried out after the dicing step, the stretching can be carried out using a previously known stretching device.

<拾取步驟> <Pickup Step>

如圖2F所示，將附片狀樹脂組合物2之半導體晶片5自切晶帶11剝離(拾取附片狀樹脂組合物2之半導體晶片5)。作為拾取之方法，並無特別限定，可採用先前公知之各種方法。 As shown in FIG. 2F, the semiconductor wafer 5 of the sheet-like resin composition 2 is peeled off from the dicing tape 11 (the semiconductor wafer 5 of the sheet-like resin composition 2 is picked up). The method of picking up is not particularly limited, and various methods known in the prior art can be employed.

此處，於切晶帶11之黏著劑層11b為紫外線硬化型之情形時，拾取係於對黏著劑層11b照射紫外線後進行。藉此，黏著劑層11b對半導體晶片5之黏著力降低，半導體晶片5之剝離變得容易。 Here, in the case where the adhesive layer 11b of the dicing tape 11 is of an ultraviolet curing type, the pickup is performed after the ultraviolet ray is applied to the adhesive layer 11b. Thereby, the adhesion of the adhesive layer 11b to the semiconductor wafer 5 is lowered, and the peeling of the semiconductor wafer 5 becomes easy.

<連接步驟> <Connection step>

於連接步驟中，利用片狀樹脂組合物2填充被接著體6與半導體晶片5間之空間，並且經由連接構件4而將半導體晶片5與被接著體6電性連接(參照圖2G)。具體而言，一面使形成於半導體晶片5上之連接構件4與被接著於被接著體6之連接墊上之接合用導電材料7接觸並進行推壓，一面使導電材料7熔融，藉此將半導體晶片5與被接著體6電性連接。由於在半導體晶片5之電路面3a貼附有片狀樹脂組合物2，故 而將半導體晶片5與被接著體6電性連接之同時，半導體晶片5與被接著體6間之空間被片狀樹脂組合物2填充。此處，作為電極之連接構件4及導電材料7之材質並無特別限制，較佳為銅。若具有連接構件4及導電材料7中之至少一者包含銅之電極，則變得需要較先前更高溫下之處理。然而，片狀樹脂組合物2由於由加熱引起之重量減少率為上述數值範圍內，且吸濕率為上述數值範圍內，故而高溫下之耐久性優異。因此，若使用片狀樹脂組合物2，則可提高將銅電極用於被接著體與半導體元件之接合的覆晶型半導體裝置之可靠性。 In the joining step, the space between the adherend 6 and the semiconductor wafer 5 is filled with the sheet-like resin composition 2, and the semiconductor wafer 5 and the adherend 6 are electrically connected via the connecting member 4 (see FIG. 2G). Specifically, the connecting member 4 formed on the semiconductor wafer 5 is brought into contact with and pressed by the bonding conductive material 7 which is next to the bonding pad of the bonding body 6, and the conductive material 7 is melted, whereby the semiconductor is melted. The wafer 5 is electrically connected to the bonded body 6. Since the sheet-like resin composition 2 is attached to the circuit surface 3a of the semiconductor wafer 5, While the semiconductor wafer 5 is electrically connected to the adherend 6, the space between the semiconductor wafer 5 and the adherend 6 is filled with the sheet-like resin composition 2. Here, the material of the connecting member 4 and the conductive material 7 as the electrodes is not particularly limited, and copper is preferable. If at least one of the connecting member 4 and the electrically conductive material 7 contains an electrode of copper, it becomes necessary to process at a higher temperature than before. However, since the sheet-like resin composition 2 has a weight reduction rate due to heating within the above numerical range and a moisture absorption rate within the above numerical range, it is excellent in durability at a high temperature. Therefore, when the sheet-like resin composition 2 is used, the reliability of using the copper electrode for the flip-chip type semiconductor device in which the bonding body and the semiconductor element are bonded can be improved.

連接步驟中之加熱條件並無特別限定，通常加熱條件為100~300℃，加壓條件為0.5~500N。 The heating conditions in the connecting step are not particularly limited, and the heating conditions are usually 100 to 300 ° C and the pressing conditions are 0.5 to 500 N.

再者，亦可以多階段進行連接步驟中之熱壓接處理。藉由以多階段進行熱壓接處理，可高效率地去除連接構件4與導電材料7間之樹脂，可獲得更良好之金屬間接合。 Furthermore, the thermocompression bonding process in the joining step can also be carried out in multiple stages. By performing the thermocompression bonding treatment in multiple stages, the resin between the connecting member 4 and the conductive material 7 can be efficiently removed, and a better intermetallic bond can be obtained.

<硬化步驟> <hardening step>

進行半導體晶片5與被接著體6之電性連接後，藉由加熱使片狀樹脂組合物2硬化。藉此，可確保半導體晶片5與被接著體6間之連接可靠性。作為用以使片狀樹脂組合物2硬化之加熱溫度，並無特別限定，例如於150~200℃下進行10~120分鐘。再者，亦可藉由連接步驟中之加熱處理而使片狀樹脂組合物硬化。 After the semiconductor wafer 5 is electrically connected to the adherend 6, the sheet-like resin composition 2 is cured by heating. Thereby, the connection reliability between the semiconductor wafer 5 and the adherend 6 can be ensured. The heating temperature for curing the sheet-like resin composition 2 is not particularly limited, and is, for example, carried out at 150 to 200 ° C for 10 to 120 minutes. Further, the sheet-like resin composition may be cured by heat treatment in the joining step.

<密封步驟> <Sealing step>

其次，為了保護具備所安裝之半導體晶片5的半導體裝置30整體，亦可進行密封步驟。密封步驟係使用密封樹脂而進行。作為此時之密封條件，並無特別限定，通常藉由在175℃下進行60秒~90秒之加熱而進行密封樹脂之熱硬化，但本發明並不限定於此，例如可於165℃~185℃下進行數分鐘固化。 Next, in order to protect the entire semiconductor device 30 including the mounted semiconductor wafer 5, a sealing step may be performed. The sealing step is carried out using a sealing resin. The sealing condition at this time is not particularly limited, and the sealing resin is usually thermally cured by heating at 175 ° C for 60 seconds to 90 seconds. However, the present invention is not limited thereto, and may be, for example, 165 ° C. Curing was carried out for several minutes at 185 °C.

作為密封樹脂，較佳為具有絕緣性之樹脂(絕緣樹脂)，可自公知 之密封樹脂中適當選擇而使用。 As the sealing resin, an insulating resin (insulating resin) is preferable, which is known from the prior art. The sealing resin is appropriately selected and used.

<半導體裝置> <semiconductor device>

於半導體裝置30中，經由形成於半導體晶片5上之連接構件4及設置於被接著體6上之導電材料7而將半導體晶片5與被接著體6電性連接。又，於半導體晶片5與被接著體6之間，以填充其空間之方式配置有片狀樹脂組合物2。 In the semiconductor device 30, the semiconductor wafer 5 and the adherend 6 are electrically connected via the connecting member 4 formed on the semiconductor wafer 5 and the conductive material 7 provided on the adherend 6. Moreover, the sheet-like resin composition 2 is disposed between the semiconductor wafer 5 and the adherend 6 so as to fill the space.

其次，對在切晶帶上設置有片狀樹脂組合物之切晶帶一體型片狀樹脂組合物進行說明。 Next, a diced tape-integrated sheet-like resin composition in which a sheet-like resin composition is provided on a dicing tape will be described.

<切晶帶一體型片狀樹脂組合物> <Cutting Tape Integrated Chip Resin Composition>

圖3係本發明之另一實施形態之切晶帶一體型片狀樹脂組合物之剖面模式圖。本實施形態之切晶帶一體型片狀樹脂組合物50係於切晶帶41上積層有片狀樹脂組合物42之構造。切晶帶41係於基材41a上積層有黏著劑層41b之構造。片狀樹脂組合物2係積層於切晶帶41之黏著劑層41b上。再者，片狀樹脂組合物42可不積層於切晶帶41之整個面，而以與半導體晶圓43(參照圖4A)之貼合所需之尺寸進行設置即可。 Fig. 3 is a schematic cross-sectional view showing a diced tape-integrated sheet-like resin composition according to another embodiment of the present invention. The dicing tape-integrated sheet-like resin composition 50 of the present embodiment has a structure in which a sheet-like resin composition 42 is laminated on the dicing tape 41. The dicing tape 41 has a structure in which an adhesive layer 41b is laminated on the substrate 41a. The sheet-like resin composition 2 is laminated on the adhesive layer 41b of the dicing tape 41. Further, the sheet-like resin composition 42 may be disposed on the entire surface of the dicing tape 41, and may be provided in a size required for bonding with the semiconductor wafer 43 (see FIG. 4A).

切晶帶41具備：基材41a及積層於基材41a上之黏著劑層41b。作為基材41a，可使用基材1a中所例示者。作為黏著劑層41b，可使用黏著劑層1b中所例示者。 The dicing tape 41 is provided with a base material 41a and an adhesive layer 41b laminated on the base material 41a. As the substrate 41a, those exemplified in the substrate 1a can be used. As the adhesive layer 41b, those exemplified in the adhesive layer 1b can be used.

作為片狀樹脂組合物42，可使用上述所說明之片狀樹脂組合物2中所例示者。 As the sheet-like resin composition 42, those exemplified in the sheet-like resin composition 2 described above can be used.

(使用切晶帶一體型片狀樹脂組合物的半導體裝置之製造方法) (Manufacturing method of semiconductor device using diced tape-integrated sheet-like resin composition)

其次，對使用切晶帶一體型片狀樹脂組合物50的半導體裝置之製造方法進行說明。圖4A~圖4D係用以說明使用如圖3所示之切晶帶一體型片狀樹脂組合物的半導體裝置之製造方法的圖。 Next, a method of manufacturing a semiconductor device using the dicing tape-integrated sheet-like resin composition 50 will be described. 4A to 4D are views for explaining a method of manufacturing a semiconductor device using the diced tape-integrated sheet-like resin composition shown in Fig. 3.

具體而言，該半導體裝置之製造方法包括：貼合步驟，其係使 形成有具有連接構件44之電路面的半導體晶圓43與切晶帶一體型片狀樹脂組合物50之片狀樹脂組合物42進行貼合；切晶步驟，其係將半導體晶圓43切晶而形成附片狀樹脂組合物42之半導體晶片45；拾取步驟，其係將附片狀樹脂組合物42之半導體晶片45自切晶帶41剝離；連接步驟，其係利用片狀樹脂組合物42填充被接著體46與半導體晶片45間之空間並且經由連接構件44而將半導體晶片45與被接著體46電性連接；及硬化步驟，其係使片狀樹脂組合物42硬化。 Specifically, the method of manufacturing the semiconductor device includes: a bonding step, which is The semiconductor wafer 43 having the circuit surface having the connection member 44 is bonded to the sheet-like resin composition 42 of the diced tape-integrated sheet-like resin composition 50; the dicing step is to dicing the semiconductor wafer 43 And a semiconductor wafer 45 which forms the sheet-like resin composition 42; a pick-up step of peeling off the semiconductor wafer 45 of the sheet-like resin composition 42 from the dicing tape 41; and a joining step of using the sheet-like resin composition 42 The space between the bonded body 46 and the semiconductor wafer 45 is filled and the semiconductor wafer 45 is electrically connected to the bonded body 46 via the connecting member 44, and a hardening step is performed to cure the sheet-like resin composition 42.

再者，以下對在半導體晶圓之兩面形成有電路面並且兩面形成有連接構件之情形進行說明，但於本發明中，亦可使用僅於與片狀樹脂組合物之貼合面側形成有具有連接構件之電路面的半導體晶圓。 In the following description, a case where a circuit surface is formed on both surfaces of a semiconductor wafer and a connection member is formed on both surfaces will be described. However, in the present invention, it may be formed only on the bonding surface side of the sheet-like resin composition. A semiconductor wafer having a circuit surface that connects the members.

<貼合步驟> <Fitting step>

於貼合步驟中，如圖4A所示，使兩面形成有具有連接構件44之電路面的半導體晶圓43與切晶帶一體型片狀樹脂組合物50之片狀樹脂組合物42進行貼合。再者，通常半導體晶圓43之強度較弱，因而存在為了進行強化而將半導體晶圓43固定於支持玻璃等支持體上之情況(未圖示)。於該情形時，亦可包括如下步驟：於使半導體晶圓43與片狀樹脂組合物42貼合後，將支持體剝離。關於使半導體晶圓43之何電路面與片狀樹脂組合物42進行貼合，根據目標之半導體裝置之構造進行變更即可。 In the bonding step, as shown in FIG. 4A, the semiconductor wafer 43 having the circuit surface having the connection member 44 formed on both sides is bonded to the sheet-like resin composition 42 of the diced tape-integrated sheet-like resin composition 50. . Further, although the strength of the semiconductor wafer 43 is generally weak, there is a case where the semiconductor wafer 43 is fixed to a support such as a support glass for reinforcement (not shown). In this case, the step of bonding the semiconductor wafer 43 to the sheet-like resin composition 42 may be included, and then the support may be peeled off. The circuit surface of the semiconductor wafer 43 and the sheet-like resin composition 42 may be bonded together, and may be changed according to the structure of the intended semiconductor device.

半導體晶圓43之兩面之連接構件44彼此可電性連接，亦可不連接。關於連接構件44彼此之電性連接，可列舉稱為TSV(Through Silicon Via，矽通孔)形式之藉由經由通孔之連接而進行者等。作為貼合條件，可採用背面研磨用帶一體型片狀樹脂組合物10之貼合步驟中所例示之條件。 The connecting members 44 on both sides of the semiconductor wafer 43 may or may not be electrically connected to each other. The electrical connection between the connection members 44 is exemplified by a connection in the form of a TSV (Through Silicon Via) via a via hole. As the bonding conditions, the conditions exemplified in the bonding step of the integrated sheet-like resin composition 10 for back grinding can be employed.

<切晶步驟> <Cutting step>

於切晶步驟中，將半導體晶圓43及片狀樹脂組合物42切晶而形 成附片狀樹脂組合物42之半導體晶片45(參照圖4B)。作為切晶條件，可採用背面研磨用帶一體型片狀樹脂組合物10之切晶步驟中所例示之條件。 In the dicing step, the semiconductor wafer 43 and the sheet-like resin composition 42 are diced and shaped The semiconductor wafer 45 to which the sheet-like resin composition 42 is attached (see FIG. 4B). As the dicing conditions, the conditions exemplified in the dicing step of the integrated sheet-like resin composition 10 for back grinding can be employed.

<拾取步驟> <Pickup Step>

於拾取步驟中，將附片狀樹脂組合物42之半導體晶片45自切晶帶41剝離(參照圖4C)。作為拾取條件，可採用背面研磨用帶一體型片狀樹脂組合物10之拾取步驟中所例示之條件。 In the pickup step, the semiconductor wafer 45 of the sheet-like resin composition 42 is peeled off from the dicing tape 41 (refer to FIG. 4C). As the pick-up condition, the conditions exemplified in the pick-up step of the integrated sheet-like resin composition 10 for back grinding can be employed.

<連接步驟> <Connection step>

於連接步驟中，利用片狀樹脂組合物42填充被接著體46與半導體晶片45間之空間，並且經由連接構件44而將半導體晶片45與被接著體46電性連接(參照圖4D)。具體之連接方法與背面研磨用帶一體型片狀樹脂組合物10之連接步驟中所說明之內容相同。作為連接步驟之加熱條件，可採用背面研磨用帶一體型片狀樹脂組合物10中所例示之條件。 In the joining step, the space between the adherend 46 and the semiconductor wafer 45 is filled with the sheet-like resin composition 42, and the semiconductor wafer 45 is electrically connected to the adherend 46 via the connecting member 44 (see FIG. 4D). The specific connection method is the same as that described in the step of connecting the back sheet-like integral sheet-like resin composition 10. As the heating conditions for the joining step, the conditions exemplified in the tape-integrated sheet-like resin composition 10 for back grinding can be employed.

<硬化步驟及密封步驟> <hardening step and sealing step>

硬化步驟及密封步驟與背面研磨用帶一體型片狀樹脂組合物10之硬化步驟及密封步驟中所說明之內容相同。藉此，可製造半導體裝置60。 The hardening step and the sealing step are the same as those described in the hardening step and the sealing step of the belt-integrated sheet-like resin composition 10 for back grinding. Thereby, the semiconductor device 60 can be manufactured.

[實施例] [Examples]

以下，例示性地詳細說明本發明之適宜實施例。但是，該實施例中所記載之材料或調配量等只要無特別之限定性記載，則並非旨在將本發明之範圍僅限定於該等，而僅為單純之說明例。又，所謂份意指重量份。 Hereinafter, suitable embodiments of the present invention will be exemplarily described in detail. However, the materials, the blending amounts, and the like described in the examples are not intended to limit the scope of the present invention, but are merely illustrative examples, unless otherwise specified. Further, the term "parts" means parts by weight.

(聚醯亞胺樹脂之製備) (Preparation of polyimine resin)

根據表1中記載之調配比，將二胺溶解於N-甲基-2-吡咯啶酮(NMP)中，並向其中添加酸二酐、及硬化促進劑，於室溫下攪拌1小 時，繼而於80℃下攪拌4小時，其後於180℃下攪拌5小時。攪拌結束後，將溶液投入至水3L中，獲得白色之已沈澱之聚合物。 According to the compounding ratio described in Table 1, the diamine was dissolved in N-methyl-2-pyrrolidone (NMP), and an acid dianhydride and a hardening accelerator were added thereto, and the mixture was stirred at room temperature for 1 hour. Then, it was stirred at 80 ° C for 4 hours, and then stirred at 180 ° C for 5 hours. After the completion of the stirring, the solution was poured into 3 L of water to obtain a white precipitated polymer.

將該沈澱過濾後，利用水洗浄24小時後，使用真空乾燥機，以70℃乾燥24小時，而獲得各聚醯亞胺樹脂(聚醯亞胺A、聚醯亞胺B、聚醯亞胺C)。 After filtering the precipitate, it was washed with water for 24 hours, and then dried at 70 ° C for 24 hours using a vacuum dryer to obtain each polyimine resin (polyimine A, polyimine B, polyimine). C).

對實施例中所使用之成分進行說明。 The components used in the examples will be described.

(聚醯亞胺) (polyimine)

上述聚醯亞胺A Polyimine A

上述聚醯亞胺B Polyimine B

上述聚醯亞胺C Polyimine C

(環氧樹脂) (epoxy resin)

環氧樹脂A：商品名「Epikote 1004」，JER股份有限公司製造 Epoxy resin A: trade name "Epikote 1004", manufactured by JER Co., Ltd.

(填料) (filler)

填料A：商品名「SO-25R」，Admatechs股份有限公司製造 Filler A: Trade name "SO-25R", manufactured by Admatechs, Inc.

(有機酸) (organic acid)

對甲氧基苯甲酸 P-methoxybenzoic acid

二苯乙醇酸 Diphenyl glycolic acid

樟腦酸 Camphoric acid

丙酮酸 Pyruvate

油酸 Oleic acid

實施例及比較例 Examples and comparative examples

<片狀樹脂組合物之製作> <Production of sheet-like resin composition>

根據表2、3中記載之調配比，將各成分溶解於N-甲基-2-吡咯啶酮(NMP)中之後，塗佈於剝離基材上，於150℃下乾燥5分鐘，而獲得實施例及比較例之片狀樹脂組合物。 According to the mixing ratios described in Tables 2 and 3, each component was dissolved in N-methyl-2-pyrrolidone (NMP), and then applied onto a release substrate, followed by drying at 150 ° C for 5 minutes. The sheet-like resin composition of the examples and the comparative examples.

<切晶帶一體型片狀樹脂組合物之製作> <Production of a dicing ribbon-integrated sheet-like resin composition>

使用手壓輥將各實施例及比較例之片狀樹脂組合物貼合於切晶帶(商品名「V-8-T」，日東電工股份有限公司製造)之黏著劑層上，而獲得切晶帶一體型片狀樹脂組合物。 The sheet-like resin composition of each of the examples and the comparative examples was bonded to an adhesive layer of a dicing tape (trade name "V-8-T", manufactured by Nitto Denko Corporation) using a hand roll to obtain a cut. A ribbon-integrated sheet-like resin composition.

(重量減少率測定) (Measurement of weight reduction rate)

使用示差熱-熱重量(TG-DTA)同時測定裝置(Rigaku公司製造，製品名：thermo plus TG8120)，藉由10℃/min之升溫以25℃~500℃之範 圍進行測定，將300℃之時點之重量變化量(%)設為重量減少率。將結果示於表2、表3。 Using a differential thermal-thermal weight (TG-DTA) simultaneous measurement device (manufactured by Rigaku Co., Ltd., product name: thermo plus TG8120), with a temperature rise of 10 ° C / min to 25 ° C ~ 500 ° C The measurement was carried out, and the weight change amount (%) at the time of 300 ° C was taken as the weight reduction rate. The results are shown in Table 2 and Table 3.

(吸濕率測定) (Measurement of moisture absorption rate)

對所製作之片狀樹脂組合物取樣10mg，藉由卡氏法，於150℃、3分鐘之條件下測定吸濕率。將結果示於表2、表3。 The prepared sheet-like resin composition was sampled by 10 mg, and the moisture absorption rate was measured by a Karl Fischer method at 150 ° C for 3 minutes. The results are shown in Table 2 and Table 3.

(接合性評估) (joinability assessment)

針對實施例及比較例之片狀樹脂組合物(厚度：35μm)，一面分別對晶片(WALTS(股份)公司製造之WALTS-TEG MB50-0101JY)施加80~100℃之熱一面利用滾筒貼合機進行貼附。該貼附係於晶片之形成有電極之面側進行。 With respect to the sheet-like resin composition (thickness: 35 μm) of the examples and the comparative examples, the wafer (WALTS-TEG MB50-0101JY manufactured by WALTS Co., Ltd.) was applied with a heat of 80 to 100 ° C, and a roll laminator was used. Attach it. This attachment is performed on the side of the wafer on which the electrodes are formed.

其次，將附片狀樹脂組合物之晶片貼附於基板(WALTS(股份)公司製造之WALTS-KIT MB50-0102JY_CR)上。該貼附係使用Panasonic Factory Solutions(股份)公司製造之覆晶接合機FCB3，於300℃、100N、10分鐘之條件下進行。再者，貼附係將片狀樹脂組合物設為貼合面而進行。據此，製作出評估用之安裝完晶片之基板。為了研磨時之固定，將該基板埋入熱硬化性樹脂(Marumoto Struers公司製造，商品名：EPOFIX)中而製作評估用樣品。其次，沿著與基板面正交之方向，使用砂紙或氧化鋁對評估用樣品進行研磨，使用光學顯微鏡(~1000倍)及SEM(~20000倍)觀察研磨後之研磨面。將於基板與晶片之電極間未確認到間隙之情形評估為○，將確認到間隙之情形評估為×。將結果示於表2、表3。 Next, the wafer with the sheet-like resin composition was attached to a substrate (WALTS-KIT MB50-0102JY_CR manufactured by WALTS Co., Ltd.). This attachment was carried out at 300 ° C, 100 N, and 10 minutes using a flip chip bonding machine FCB3 manufactured by Panasonic Factory Solutions. Further, the attachment is carried out by setting the sheet-like resin composition as a bonding surface. Accordingly, a substrate on which the wafer for mounting was evaluated was fabricated. For the fixation at the time of polishing, the substrate was embedded in a thermosetting resin (manufactured by Marumoto Struers Co., Ltd., trade name: EPOFIX) to prepare a sample for evaluation. Next, the sample for evaluation was polished in the direction orthogonal to the surface of the substrate, using sandpaper or alumina, and the polished surface after polishing was observed using an optical microscope (~1000 times) and SEM (~20000 times). A case where no gap was confirmed between the substrate and the electrode of the wafer was evaluated as ○, and a case where the gap was confirmed was evaluated as ×. The results are shown in Table 2 and Table 3.

(空隙評估) (void assessment)

以與上述接合性評估相同之方式獲得實施例及比較例之評估用樣品。其次，沿著與基板面平行方向，使用砂紙或氧化鋁對評估用樣品進行研磨，使用光學顯微鏡(~1000倍)觀察研磨後之研磨面。將於介置於基板與晶片間之片狀樹脂組合物中未確認到空隙之情形評估為 ○，將確認到空隙之情形評估為×。將結果示於表2、表3。 The samples for evaluation of the examples and comparative examples were obtained in the same manner as the above evaluation of the bondability. Next, the sample for evaluation was polished using sandpaper or alumina in a direction parallel to the substrate surface, and the polished surface after polishing was observed using an optical microscope (~1000 times). The case where no void is confirmed in the sheet-like resin composition interposed between the substrate and the wafer is evaluated as ○, the case where the gap was confirmed was evaluated as ×. The results are shown in Table 2 and Table 3.

1‧‧‧背面研磨用帶 1‧‧‧Back grinding belt

1a‧‧‧基材 1a‧‧‧Substrate

1b‧‧‧黏著劑層 1b‧‧‧Adhesive layer

2‧‧‧片狀樹脂組合物 2‧‧‧Flake resin composition

10‧‧‧背面研磨用帶一體型片狀樹脂組合物 10‧‧‧Integral sheet-like resin composition for back grinding

Claims (11)

一種片狀樹脂組合物，其特徵在於：其係用於被接著體與覆晶連接於上述被接著體上之半導體元件之界面密封者，並且以10℃/min之升溫速度自25℃升溫至300℃時之重量減少率為2%以下，藉由卡氏法測得之吸濕率為1%以下，於相對於片狀樹脂組合物整體為1重量%以上且10重量%以下之範圍內含有酸解離常數為3.0以上且5.0以下之範圍內之有機酸。 A sheet-like resin composition for use in an interface seal of a semiconductor element to which a bonding body and a flip chip are bonded to the above-mentioned adherend, and is heated from 25 ° C at a temperature increase rate of 10 ° C / min to The weight loss rate at 300 ° C is 2% or less, and the moisture absorption rate measured by the Karl Fischer method is 1% or less, and is in the range of 1% by weight or more and 10% by weight or less based on the total amount of the sheet-like resin composition. An organic acid having an acid dissociation constant in a range of 3.0 or more and 5.0 or less. 如請求項1之片狀樹脂組合物，其具有上述被接著體、及上述半導體元件之至少一者包含銅之電極。 The sheet-like resin composition of claim 1, comprising an electrode comprising at least one of the above-mentioned adherend and the semiconductor element. 如請求項1之片狀樹脂組合物，其含有聚醯亞胺樹脂與無機填料。 The sheet-like resin composition of claim 1, which comprises a polyimide resin and an inorganic filler. 如請求項1之片狀樹脂組合物，其含有聚醯亞胺樹脂、環氧樹脂、及無機填料。 The sheet-like resin composition of claim 1, which comprises a polyimide resin, an epoxy resin, and an inorganic filler. 一種背面研磨用帶一體型片狀樹脂組合物，其具備如請求項1至4中任一項之片狀樹脂組合物與背面研磨用帶，並且於上述背面研磨用帶上設置有上述片狀樹脂組合物。 A sheet-like resin composition for back-grinding, comprising the sheet-like resin composition according to any one of claims 1 to 4, and a back-grinding tape, wherein the sheet is provided on the back-grinding tape Resin composition. 一種切晶帶一體型片狀樹脂組合物，其具備如請求項1至4中任一項之片狀樹脂組合物與切晶帶，並且於上述切晶帶上設置有上述片狀樹脂組合物。 A flaky resin-integrated sheet-like resin composition comprising the sheet-like resin composition and the dicing tape according to any one of claims 1 to 4, wherein the sheet-like resin composition is provided on the dicing tape . 一種半導體裝置之製造方法，其特徵在於：其係使用如請求項5之背面研磨用帶一體型片狀樹脂組合物，並且包括如下步驟：貼合步驟，其係使半導體晶圓之形成有連接構件之電路面與上述背面研磨用帶一體型片狀樹脂組合物之上述片狀樹脂組合 物進行貼合；研磨步驟，其係對上述半導體晶圓之背面進行研磨；晶圓固定步驟，其係於背面研磨後之上述半導體晶圓之背面貼附切晶帶；剝離步驟，其係將上述背面研磨用帶剝離；切晶步驟，其係將上述半導體晶圓切晶而形成附片狀樹脂組合物之半導體晶片；拾取步驟，其係將上述附片狀樹脂組合物之半導體晶片自上述切晶帶剝離；連接步驟，其係利用上述片狀樹脂組合物填充被接著體與上述半導體晶片間之空間，並且經由上述連接構件而將上述半導體晶片與上述被接著體電性連接；及硬化步驟，其係使上述片狀樹脂組合物硬化。 A method of manufacturing a semiconductor device using the tape-integrated sheet-like resin composition for back-grinding according to claim 5, and comprising the step of bonding a semiconductor wafer to which a connection is formed The above-mentioned sheet-like resin combination of the circuit surface of the member and the above-mentioned back sheet polishing integrated sheet-like resin composition a bonding step of polishing a back surface of the semiconductor wafer; a wafer fixing step of attaching a dicing tape to a back surface of the semiconductor wafer after back grinding; and a stripping step The back surface polishing strip is stripped; the dicing step is a semiconductor wafer in which the semiconductor wafer is diced to form a sheet-like resin composition; and a pick-up step is performed by using the semiconductor wafer of the sheet-like resin composition described above a dicing tape peeling; a connecting step of filling a space between the adherend and the semiconductor wafer by the sheet-like resin composition, and electrically connecting the semiconductor wafer to the adherend via the connecting member; and hardening The step of hardening the above-mentioned sheet-like resin composition. 一種半導體裝置之製造方法，其特徵在於：其係使用如請求項6之切晶帶一體型片狀樹脂組合物，並且包括如下步驟：貼合步驟，其係使形成有具有連接構件之電路面之半導體晶圓與上述切晶帶一體型片狀樹脂組合物之上述片狀樹脂組合物進行貼合；切晶步驟，其係將上述半導體晶圓切晶而形成附片狀樹脂組合物之半導體晶片；拾取步驟，其係將上述附片狀樹脂組合物之半導體晶片自上述切晶帶剝離；連接步驟，其係利用片狀樹脂組合物填充被接著體與上述半導體晶片間之空間，並且經由上述連接構件而將上述半導體晶片與上述被接著體電性連接；及硬化步驟，其係使上述片狀樹脂組合物硬化。 A method of manufacturing a semiconductor device, comprising: using the diced tape-integrated sheet-like resin composition of claim 6, and comprising the step of: a bonding step of forming a circuit surface having a connecting member The semiconductor wafer is bonded to the sheet-like resin composition of the diced tape-integrated sheet-like resin composition; and the dicing step is a process of dicing the semiconductor wafer to form a semiconductor of the sheet-like resin composition. a wafer; a picking step of peeling the semiconductor wafer of the sheet-like resin composition from the dicing tape; and a joining step of filling a space between the adherend and the semiconductor wafer with a sheet-like resin composition, and The semiconductor member is electrically connected to the semiconductor element and the curing step, and the curing step is to cure the sheet-like resin composition. 一種半導體裝置，其係使用如請求項1至4中任一項之片狀樹脂組合物而製造。 A semiconductor device manufactured by using the sheet-like resin composition according to any one of claims 1 to 4. 一種半導體裝置，其係使用如請求項5之背面研磨用帶一體型片狀樹脂組合物而製造。 A semiconductor device manufactured by using the tape-integrated sheet-like resin composition for back-grinding according to claim 5. 一種半導體裝置，其係使用如請求項6之切晶帶一體型片狀樹脂組合物而製造。 A semiconductor device produced by using the diced tape-integrated sheet-like resin composition of claim 6.
TW103118492A 2013-06-04 2014-05-27 Sheet-form resin composition, tape-integrated-sheet-form resin composition for back-surface polishing, dicing-tape-integrated-sheet-form resin composition, method for manufacturing semiconductor device, and semiconductor device TW201504345A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013118009A JP6193627B2 (en) 2013-06-04 2013-06-04 Sheet-shaped resin composition, back-grinding tape-integrated sheet-shaped resin composition, dicing tape-integrated sheet-shaped resin composition, semiconductor device manufacturing method, and semiconductor device

Publications (1)

Publication Number Publication Date
TW201504345A true TW201504345A (en) 2015-02-01

Family

ID=52007946

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103118492A TW201504345A (en) 2013-06-04 2014-05-27 Sheet-form resin composition, tape-integrated-sheet-form resin composition for back-surface polishing, dicing-tape-integrated-sheet-form resin composition, method for manufacturing semiconductor device, and semiconductor device

Country Status (5)

Country Link
JP (1) JP6193627B2 (en)
KR (1) KR20160016854A (en)
CN (1) CN105264652A (en)
TW (1) TW201504345A (en)
WO (1) WO2014196293A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015002542B4 (en) 2015-02-27 2023-07-20 Disco Corporation wafer division process
JP2017088758A (en) * 2015-11-11 2017-05-25 リンテック株式会社 Adhesive sheet

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002338932A (en) * 2001-05-14 2002-11-27 Sony Chem Corp Adhesive
JP5417729B2 (en) * 2008-03-28 2014-02-19 住友ベークライト株式会社 Film for semiconductor, method for manufacturing semiconductor device, and semiconductor device
JP2012160668A (en) * 2011-02-02 2012-08-23 Sumitomo Bakelite Co Ltd Method for manufacturing electric component
JP5738263B2 (en) * 2012-12-25 2015-06-17 日立化成株式会社 Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
KR20160016854A (en) 2016-02-15
CN105264652A (en) 2016-01-20
JP6193627B2 (en) 2017-09-06
JP2014236152A (en) 2014-12-15
WO2014196293A1 (en) 2014-12-11

Similar Documents

Publication Publication Date Title
TWI439528B (en) Cutting. Polycrystalline film
TWI503395B (en) Die-bonding film, dicing. die-bonding film and fabricating method of semicomductor device
TWI642120B (en) Reinforced sheet and method of manufacturing secondary mounted semiconductor device
WO2014171404A1 (en) Thermosetting resin composition and semiconductor device manufacturing method
TWI649391B (en) Next, the sheet, and the cut grain bonding film
TWI759375B (en) Tape for semiconductor processing
TW201318081A (en) Method for producing semiconductor device
TW201334127A (en) Method for manufacturing semiconductor device
JP2013030766A (en) Laminate film and use thereof
JP2013038408A (en) Adhesive tape for fixing semiconductor wafer, method for manufacturing semiconductor chip and adhesive tape with adhesive film
JP2013030765A (en) Method of manufacturing semiconductor device
JP2015082563A (en) Method for manufacturing semiconductor device, sheet-like resin composition, and dicing tape integrated sheet-like resin composition
TW201305306A (en) Adhesive sheet and use thereof
JP2012142368A (en) Dicing die bond film and semiconductor device
JP2012142370A (en) Dicing die bond film and semiconductor device
TW201330121A (en) Method for producing semiconductor device
TWI648369B (en) Cut-to-crystal film, semiconductor device manufacturing method, and semiconductor device
JP2012186361A (en) Dicing/die-bonding film and semiconductor element
WO2014162974A1 (en) Underfill adhesive film, underfill adhesive film with integrated backgrinding tape, underfill adhesive film with integrated dicing tape, and semiconductor device
WO2014083973A1 (en) Semiconductor-device manufacturing method
TW201546917A (en) Method for producing semiconductor device
KR20170088864A (en) Sheet-like resin composition, laminate sheet, and semiconductor device production method
TW201504345A (en) Sheet-form resin composition, tape-integrated-sheet-form resin composition for back-surface polishing, dicing-tape-integrated-sheet-form resin composition, method for manufacturing semiconductor device, and semiconductor device
JP2013115186A (en) Manufacturing method for semiconductor device
JP6502026B2 (en) Sheet-like resin composition, laminated sheet and method of manufacturing semiconductor device