TW201448110A - Exhaust ring component and substrate processing device comprising the exhaust ring component - Google Patents

Abstract

The present invention provides a substrate processing device for increasing the substrate processing efficiency. The substrate processing device of the present invention comprises: a processing chamber; a chuck located inside the processing chamber and supporting the substrate; a baffle plate configured above the chuck and opposite to the chuck, the baffle plate is formed with distribution holes for distributing the processing gas to the interior of the processing chamber; and an annular side exhaust ring, which is mounted at a position higher than the chuck, and surrounding the treating space into which the processing gas flows through the distribution holes, and formed into the exhaust holes.

Description

Exhaust ring assembly and substrate processing apparatus including the same

The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus including an exhaust ring assembly.

Plasma refers to a gas state after ionization including ions or electrons, radicals, etc., and plasma is generated by very high temperature, strong electric field or RF Electromagnetic Fields.

Such plasmas are used in a variety of ways in the lithography step of using photoresist for the fabrication of semiconductor components. As an example, various fine circuit patterns such as a line or a space pattern are formed on a substrate, or a gray resist film used as a mask is removed by an ion implantation step. In the ashing step, the utilization rate is gradually increased.

In the prior art document 1, there is disclosed an apparatus for performing step processing on a substrate using plasma. The electrostatic chuck of the device is located in the center of the step chamber, and an exhaust member is disposed around the electrostatic chuck to discharge the gas. Since the flow of the gas discharged from the exhaust member fluctuates, the control of the exhaust member greatly affects the uniformity of the steps.

With the exhaust member disclosed in the aforementioned prior art document 1, there is a limit in uniformly flowing the gas, and therefore, the gas flow is biased, Therefore, the steps were once poor. Further, most of the step gas is discharged through the exhaust member at a relatively fast flow rate, so that the time remaining in the chamber chamber is shortened, and the step efficiency is low.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Korean Patent Publication No. 10-2007-0118482

The present invention provides a substrate processing apparatus capable of improving substrate processing efficiency.

Further, the present invention provides a substrate processing apparatus capable of improving the uniformity of steps.

Further, the present invention provides an exhaust ring assembly capable of improving the exhaust gas discharge effect.

A substrate processing apparatus according to an embodiment of the present invention includes: a step chamber; a chuck located inside the step chamber and supporting a substrate; and a blocking plate disposed opposite to the chuck to an upper portion of the chuck, and Forming a distribution hole for distributing the step gas supplied to the inside of the chamber; and a ring-shaped side exhaust ring disposed at a position higher than the chuck to surround the flow of the gas through the distribution hole Space and formed with vent holes.

Further, a plurality of the aforementioned side exhaust rings may be stacked in the vertical direction so as to be spaced apart from each other.

Further, the exhaust holes of the side exhaust ring may be arranged on the same straight line in the vertical direction.

Moreover, the exhaust holes of the side exhaust ring may not be in the up and down direction. Arrange on the same line.

Further, the side exhaust ring may be divided into at least two or more groups; and the exhaust holes of the side exhaust rings belonging to the same group are arranged on the same straight line in the vertical direction, belonging to The aforementioned exhaust holes of the aforementioned side exhaust ring of the other group are not arranged on the same straight line in the up and down direction.

Further, the side exhaust ring may have first to fourth side exhaust rings sequentially stacked from the bottom to the top; the exhaust hole of the first side exhaust ring and the third side row The exhaust holes of the gas ring are arranged on the same straight line in the vertical direction, and the exhaust holes of the second side exhaust ring and the exhaust holes of the fourth side exhaust ring are arranged in the same direction in the vertical direction. The exhaust hole of the first side exhaust ring and the exhaust hole of the second side exhaust ring are not aligned on the same straight line in the vertical direction.

Further, the lower exhaust ring may be further provided at the same height as or lower than the height of the chuck, and a vent hole is formed.

Further, at least two or more of the lower exhaust rings may be provided, and the lower exhaust rings may be stacked in the vertical direction, and the exhaust holes of the lower exhaust ring may be arranged on the same straight line in the vertical direction.

Further, at least two or more of the lower exhaust rings may be provided, and the lower exhaust rings may be stacked in the vertical direction, and the exhaust holes of the lower exhaust ring may not be arranged in the same direction in the vertical direction. On the line.

A substrate processing apparatus according to another embodiment of the present invention includes: a step chamber having a space formed therein; a chuck located inside the step chamber and supporting a substrate; and a plasma generating portion having a plasma generating portion Discharge Space, and supplying plasma to the inside of the step chamber; a resisting plate located at an upper portion of the chuck, and having a dispensing hole that distributes plasma supplied to the inside of the step chamber; and a side row of a ring shape The gas ring is disposed at a position higher than the chuck, surrounds a processing space into which the plasma passing through the distribution hole flows, and is formed with a vent hole.

Further, it is possible to further include a lower exhaust ring which is located at the same height as or lower than the height of the chuck and has a vent hole formed therein.

Further, a plurality of the side exhaust rings may be provided, and the side exhaust rings may be stacked in the vertical direction.

Further, the exhaust holes of the side exhaust ring may be arranged on the same straight line in the vertical direction.

Further, the exhaust holes of the side exhaust ring may be arranged on the same straight line without being arranged in the vertical direction.

Further, the exhaust hole of the side exhaust ring and the exhaust hole of the lower exhaust ring may be arranged on the same straight line in the vertical direction.

Further, the exhaust holes of the side exhaust ring and the exhaust holes of the lower exhaust ring may be arranged on the same straight line without being arranged in the vertical direction.

The exhaust ring assembly of the embodiment of the present invention can include a ring-shaped side exhaust ring, and the ring-shaped side exhaust ring is disposed at a position higher than the chuck on which the substrate is placed, surrounding the upper region of the chuck, And a vent hole is formed.

Further, it is possible to further include a ring-shaped exhaust ring having a ring shape, and the side exhaust ring of the ring shape is provided at the same height as or lower than the height of the chuck, and a vent hole is formed.

Further, a plurality of the side exhaust rings may be provided, and the side exhaust rings may be stacked in the vertical direction.

Further, the exhaust holes of the side exhaust ring may be arranged on the same straight line in the vertical direction.

Further, the exhaust holes of the side exhaust ring may be arranged on the same straight line without being arranged in the vertical direction.

Further, the side exhaust ring may be divided into at least two or more groups; the exhaust holes of the side exhaust rings belonging to the same group are arranged on the same straight line in the vertical direction, belonging to other The exhaust holes of the side exhaust ring of the group are not arranged on the same straight line in the up and down direction.

According to the embodiment of the present invention, the function of the gas in the closing step of the exhaust ring assembly is improved, and the substrate processing efficiency is improved.

Further, according to the embodiment of the present invention, the flow velocity of the flue gas felt by the substrate is slowed down, and the steps are uniformly increased.

Moreover, according to the present invention, the flow of the flue gas is improved, and therefore, the smoke exhausting effect is improved.

1‧‧‧Substrate processing equipment

10‧‧‧Device front-end module

12‧‧‧Loading

14‧‧‧Frame

16‧‧‧ Carrier

18‧‧‧Transfer manipulator

19‧‧‧Mobile track

20‧‧‧Step processing room

22‧‧‧Load lock chamber

24‧‧‧Transfer chamber

25‧‧‧Ontology

26‧‧‧Transporting robot

30, 40‧‧‧ substrate processing device

100‧‧‧Step Processing Department

110, 510‧ ‧ step chamber

111‧‧‧ Subject

112, 151, 161, 162, 181, 182, 183, 184, 321, 322, 323, 324, 341, 342, 343, 344, 361, 362, 363, 364 ‧ ‧ vents

113‧‧‧Exhaust line

114, 511‧‧ ‧ processing space

115‧‧‧Closed cover

116, 221‧‧‧ Sensing space

120, 520‧‧ ‧ chuck

130, 550‧‧‧resist

131, 552‧‧‧ distribution holes

140, 140e, 140f, 570‧‧‧ exhaust ring assembly

140a‧‧‧Blocking components

150, 150a, 150c, 150d, 150e, 311, 312, 313, 314, 331, 332, 333, 334, 610‧‧‧ side exhaust ring

160, 160a, 160b, 170, 171, 172, 173, 174, 620‧‧‧ lower exhaust ring

200‧‧‧ Plasma Supply Department

210‧‧‧Reactor

211‧‧‧ discharge space

220‧‧‧ gas injection port

230‧‧‧Induction coil

240, 540‧‧‧ power supply

250, 560‧ ‧ gas supply department

351‧‧‧1st side exhaust ring

352‧‧‧2nd side exhaust ring

353‧‧‧3rd side exhaust ring

354‧‧‧4th side exhaust ring

530‧‧‧lower electrode

551‧‧‧ buffer space

W‧‧‧Substrate

X‧‧‧1st direction

Y‧‧‧2nd direction

Fig. 1 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention.

Fig. 2 is a cross-sectional view schematically showing a substrate processing apparatus according to an embodiment of the present invention.

Fig. 3 is a view showing an enlarged view of Fig. 2A and showing an exhaust ring assembly according to another embodiment of the present invention.

Fig. 4 is a view showing an enlarged view of Fig. 2A and showing an exhaust ring assembly according to another embodiment of the present invention.

Fig. 5 is a view showing an enlarged view of the A of Fig. 2 and showing an exhaust ring assembly according to another embodiment of the present invention.

Fig. 6 is a view showing an enlarged view of Fig. 2A and showing an exhaust ring assembly according to another embodiment of the present invention.

Fig. 7 is a view showing an enlarged view of Fig. 2A and showing an exhaust ring assembly according to another embodiment of the present invention.

Fig. 8 is a view showing an enlarged view of Fig. 2A and showing an exhaust ring assembly according to another embodiment of the present invention.

Fig. 9 is a view showing a substrate processing apparatus according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention can be modified into various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is an embodiment provided by those skilled in the art to more fully explain the present invention. Therefore, the shape of the elements in the drawings is exaggerated to emphasize a more explicit description.

Fig. 1 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 1 includes an equipment front end module (EFEM) 10 and a step processing chamber 20. The device front end module EFEM 10 and the step processing chamber 20 are disposed in one direction. Hereinafter, the arrangement direction of the apparatus front end module EFEM 10 and the step processing chamber 20 is defined as the first direction X, and the direction perpendicular to the first direction X when viewed from the upper side is defined as the second direction Y.

The apparatus front end module 10 is attached to the front of the processing chamber 20, and transfers the substrate W between the carrier 16 in which the substrate is housed and the processing chamber 20. The device front end module 10 includes a loading cassette 12 and a frame 14.

The loading cassette 12 is disposed in front of the frame 14 and is provided with a plurality of loading cassettes 12. The loading magazines 12 are arranged in a row along the second direction Y spaced apart from each other. A carrier 16 (for example, a wafer cassette, a wafer transfer cassette (FOUP), etc.) is attached to the loading cassette 12, respectively. The substrate W and the step processing provided in the step are stored in the carrier 16 in the completed substrate W.

The frame 14 is disposed between the loading cassette 12 and the load lock chamber 22. The transfer robot 18 is disposed inside the frame 14, and the transfer robot 18 transfers the substrate W between the loading cassette 12 and the load lock chamber 22. The transfer robot 18 is movable along the moving rail 19 provided in the second direction Y.

The step processing chamber 20 includes a load lock chamber 22, a transfer chamber 24, and a plurality of substrate processing devices 30.

The load lock chamber 22 is disposed between the transfer chamber 24 and the frame 14, and is provided to stand by before transferring the substrate W provided for the step to the substrate processing apparatus 30, or before moving the substrate W to the carrier 16 to complete the processing. Space. One or more load lock chambers 22 may be provided. According to the embodiment, two load lock chambers 22 are provided. The substrate W provided to the substrate processing apparatus 30 for the step processing can be accommodated in one of the load lock chambers 22, and the used substrate processing apparatus 30 can be accommodated in the other load lock chamber 22. The substrate W of the step is completed.

The transfer chamber 24 is disposed behind the load lock chamber 22 along the first direction X, and has a polygonal body 25 when viewed from the upper portion. On the outside of the body 25, the loading lock chamber 22 and a plurality of substrate processing apparatuses 30 are disposed along the periphery of the body 25. According to the embodiment, the transfer chamber 24 has a hexagonal body when viewed from the upper portion. The load lock chambers 22 are respectively disposed on two side walls adjacent to the device front end module 10, and the substrate processing apparatus 30 is disposed on the remaining side walls. A via (not shown) through which the substrate W enters and exits is formed on each side wall of the body 25. The passage provides a space between the transfer chamber 24 and the load lock chamber 22, or between the transfer chamber 24 and the substrate processing apparatus 30. A door (not shown) for opening and closing the passage is provided in each passage. The transfer chamber 24 can be arranged in a variety of shapes depending on the desired step module.

A transfer robot 26 is disposed inside the transfer chamber 24. The transport robot 26 transfers the unprocessed substrate W that has been placed in the load lock chamber 22 to the substrate processing apparatus 30, or transfers the substrate W that has been subjected to the step processing by the substrate processing apparatus 30 to the load lock chamber 22. The transport robot 26 can sequentially supply the substrate W to the substrate processing apparatus 30.

The substrate processing apparatus 30 supplies the gas in the plasma state to the substrate to perform the step processing. The plasma gas can be used in a variety of ways in semiconductor fabrication steps. Hereinafter, the ashing step performed by the substrate processing apparatus 30 will be described. However, the substrate processing apparatus 30 is not limited thereto, and various steps of using a plasma gas such as an etching step and a deposition step can be performed.

Figure 2 is a schematic view showing substrate processing according to an embodiment of the present invention. A sectional view of the device.

Referring to FIG. 2, the substrate processing apparatus 30 can provide an Inductively Coupled Plasma (ICP) type device. The substrate processing apparatus 30 includes a step processing unit 100 and a plasma supply unit 200. The step processing unit 100 provides a space for processing the substrate W, and the plasma supply unit 200 generates the plasma used in the substrate W processing step, and supplies the plasma to the substrate W in a downstream stream. Hereinafter, each configuration will be described in detail.

The step processing unit 100 includes a step chamber 110, a chuck 120, a baffle 130, and an exhaust ring assembly 140.

The step chamber 110 provides a space for performing the processing of the steps. The step chamber 110 has a body 111 and a sealing cover 115. The upper surface of the main body 111 is open, and a space is formed inside. An opening (not shown) through which the substrate W is inserted is formed in a side wall of the main body 111, and the opening is opened and closed by an opening and closing member such as a slit door (not shown). The opening and closing member closes the opening while the substrate W is being processed in the step chamber 110, and opens the opening when the substrate W is carried into the step chamber 110 and when the substrate W is carried out to the outside of the step chamber 110. A vent hole 112 is formed in a lower wall of the main body 111. The exhaust hole 112 is connected to the exhaust line 113. The internal pressure of the step chamber 110 is adjusted via the exhaust line 113, and the fume generated during the step and the reaction product are discharged to the outside of the step chamber 110.

The sealing cover 115 is coupled to the upper wall of the main body 111 and covers the open upper surface of the main body 111 to seal the inside of the main body 111. The upper end of the sealing cover 115 is connected to the plasma supply unit 200. Forming a sensing space in the sealing cover 115 116. The sensing space 116 has an inverted funnel shape. The plasma that has flowed in from the plasma supply unit 200 diffuses in the sensing space 116 and moves toward the barrier 130.

The chuck 120 is located inside the step chamber 110 and supports the substrate W. The chuck 120 can provide an electrostatic chuck (Electro Static Chuck) that fixes the substrate W by electrostatic force. Further, the chuck 120 may be provided as a plurality of chucks such as a vacuum chuck that fixes the substrate W by vacuum. A plurality of lifting holes (not shown) may be formed in the chuck 120. Lifting pins (not shown) are respectively inserted into the lifting holes. When the substrate W is loaded onto the chuck 120 or the substrate W is unloaded from the chuck 120, a plurality of lift pins are lifted and lowered along the lift holes. A heater may be disposed inside the chuck 120. The heater heats the substrate W to maintain the temperature suitable for the step.

The baffle 130 is coupled to the upper wall of the body 111. The barrier plate 130 has a circular disk shape and is arranged side by side opposite to the upper surface of the chuck 120. The resisting plate 130 is flat with respect to the upper surface of the chuck 120. The barrier 130 can have a radius corresponding to the substrate W. A plurality of distribution holes 131 are formed in the barrier plate 130. The plurality of distribution holes 131 are uniformly formed in the respective regions of the barrier 130 as the through holes extending from the upper surface of the self-resisting plate 130 to the bottom surface. The plasma supplied from the plasma supply unit 200 to the inside of the step chamber 110 is uniformly distributed to the inside of the step chamber 110 via the distribution hole 131.

The exhaust ring assembly 140 is disposed inside the step chamber 110. The exhaust ring assembly 140 functions to enclose the plasma in such a manner that the plasma remains in the processing space 114, and the flue gas generated in the step flows uniformly during the exhaust process. The processing space 114 serves as a space in the upper portion of the substrate W, and passes through a space in which most of the plasma of the blocking plate 130 flows. Exhaust ring assembly 140 includes a side exhaust ring 150 and a lower exhaust ring 160.

The side exhaust ring 150 is provided as a thin annular plate. The inner diameter of the side exhaust ring 150 corresponds to the outer diameter of the chuck 120 or can have a radius greater than the outer diameter of the chuck 120. The side exhaust ring 150 is located above the chuck 120. According to the embodiment, a plurality of side exhaust rings 150 are provided, and the side exhaust rings 150 are stacked in the vertical direction with respect to each other. The side exhaust ring 150 maintains a particular spacing from the adjacent side exhaust rings. The side exhaust ring 150 may be disposed from a region adjacent to the chuck 120 to a region adjacent to the barrier plate 130. The side exhaust ring 150 surrounds the processing space 114 and functions to close the plasma retained in the processing space 114.

A vent hole 151 is formed in the side exhaust ring 150. The exhaust hole 151 is formed as a through hole that reaches the bottom surface from the upper surface of the side exhaust ring 150, and is uniformly formed along the periphery of the side exhaust ring 150. The vent hole 151 can have a circular cross section. Unlike this, the vent hole 151 can be provided in various shapes.

The exhaust holes 151 formed in the respective side exhaust rings 150 may be arranged on the same straight line in the up and down direction. Further, the exhaust holes 151 formed in the respective side exhaust rings 150 may not be arranged on the same straight line in the vertical direction. Further, the exhaust holes 151 of the side exhaust ring 150 of a part of the side exhaust ring 150 may be arranged on the same straight line in the up and down direction, and the exhaust holes 151 of the remaining side exhaust ring 150 may be arranged. Do not line up on the same line in the up and down direction.

The lower exhaust ring 160 is provided as a thin annular plate. The lower exhaust ring 160 can be located at the same height as the chuck 120 or at a lower level than the chuck 120. According to an embodiment, the lower exhaust ring 160 is located on the chuck The upper surface of 120 corresponds to the height. The lower exhaust ring 160 has an inner diameter corresponding to the outer diameter of the chuck 120 and is disposed along the circumference of the chuck 120. A vent hole 161 is formed in the lower exhaust ring 160. The exhaust hole 161 is formed as a through hole that reaches the bottom surface from the upper surface of the lower exhaust ring 160, and is uniformly formed along the periphery of the lower exhaust ring 160. The vent hole 161 can have a circular cross section. Further, the vent hole 161 may be provided in various shapes.

The plasma supply unit 200 is located at the upper portion of the step chamber 110, and generates plasma from the step gas. The plasma supply unit 200 includes a reactor 210, a gas injection port 220, an induction coil 230, a power source 240, and a gas supply unit 250.

The reactor 210 has a cylindrical shape, and its upper surface and lower surface are open, and a space is formed inside. The inside of the reactor 210 is disposed as a discharge space 211 for discharging the step gas. The lower end of the reactor 210 is connected to the upper end of the sealing cover 115, and the discharge space 211 is connected to the flow path 116. The step gas after being discharged in the discharge space 211 flows into the inside of the step chamber 110 via the flow path 116.

The gas injection port 220 is coupled to the upper end of the reactor 210. The gas injection port 220 is connected to the gas supply unit 250, and supplies gas. An induction space 221 is formed on the bottom surface of the gas injection port 220. The sensing space 221 has an inverted funnel shape and is in communication with the discharge space 211. The gas that has flowed into the sensing space 221 diffuses and flows into the discharge space 211.

The induction coil 230 is wound around the reactor 210 a plurality of times along the periphery of the reactor 210. One end of the induction coil 230 is connected to the power source 240, and the other end is grounded. The power source 240 applies high frequency power or microwave power to the induction coil 230.

The gas supply unit 250 supplies gas to the discharge space 211. The step gas stored in the gas supply unit 250 is supplied to the discharge space 211 via the gas supply line. The step gas can include at least one of NH ₃ , O ₂ , N ₂ , H ₃ , and NF ₃ CH ₄ . The step gas is capable of performing an ashing step.

3 to 8 are views showing an enlarged view of A of Fig. 2 and showing an exhaust ring assembly of various embodiments of the present invention.

First, referring to FIG. 3, the blocking assembly 140a includes a plurality of side exhaust rings 150a and a single lower exhaust ring 160a. The side exhaust ring 150a can provide four side exhaust rings 311 to 314. The exhaust holes 321 to 324 of the side exhaust rings 311 to 314 are not aligned with each other in the up and down direction. Further, the exhaust holes 321 to 324 of the side exhaust rings 311 to 314 may sometimes not be aligned with the exhaust holes 161 of the lower exhaust ring 160a. In this case, the function of the side exhaust rings 311 to 314 to enclose the plasma in the processing space 114 is improved, and the substrate processing rate such as the ashing rate is improved. Further, the flow velocity of the flue gas felt by the substrate W is slowed down, and the steps are uniformly increased.

Referring to Fig. 4, unlike the embodiment of Fig. 3, the exhaust holes 341 to 344 of the side exhaust rings 331 to 334 are aligned with each other in the up and down direction. Also, the exhaust holes 341 to 344 of the side exhaust rings 331 to 334 may be aligned with the exhaust holes 162 of the lower exhaust ring 160b. In this case, the exhausting effect of the flue gas generated in the processing space 114 is excellent, and the flue gas uniformly flows. Further, the flow velocity of the flue gas felt by the substrate W is slowed down, and the uniformity of the substrate processing is improved.

Referring to FIG. 5, the side exhaust ring 150c may be divided into a plurality of groups depending on whether or not the exhaust holes are aligned. According to the embodiment, the side exhaust ring 150c is sequentially laminated with the first to fourth side exhaust rings 351 to 354 from the bottom to the top. The exhaust holes 361 and 363 formed in the first and third side exhaust rings 351 and 353 are arranged on the same straight line in the vertical direction, and therefore are divided into the same group. and, Since the exhaust holes 362 and 364 formed in the second and fourth side exhaust rings 353 and 354 are arranged on the same straight line in the vertical direction, they are divided into the same group. The exhaust holes 361 and 363 of the first and third side exhaust rings 351 and 353 and the exhaust holes 362 and 364 of the second and fourth side exhaust rings 352 and 354 are not aligned with each other, and therefore are classified into Other groups. The side exhaust rings 351 to 354 in which the exhaust holes 361 to 364 are not aligned with each other may be alternately and repeatedly arranged. In the side exhaust ring 150c included in the same group, the flue gas flows similarly, and on the other hand, between the side exhaust rings 150c included in the other groups, the flue gas flows in other forms. . In this case, not only the function of closing the plasma in the processing space of the side exhaust ring 150c but also the flow of the flue gas can be improved, thereby improving the discharge effect. Further, the flow velocity of the flue gas felt by the substrate W is slowed down, and the substrate processing is uniformly improved.

A plurality of lower exhaust rings 160b may be provided. The lower exhaust rings 160b are stacked in the vertical direction spaced apart from each other. According to the embodiment, the two lower exhaust rings 171 and 172 are provided around the chuck. The exhaust holes 181 and 182 formed in the lower exhaust rings 171 and 172 may be arranged on the same straight line in the vertical direction. The arrangement of such venting holes 181, 182 improves the flow of the flue gas.

Further, as shown in FIG. 6, the exhaust holes 183 and 184 of the lower exhaust rings 173 and 174 may not be arranged on the same straight line in the vertical direction.

Further, as shown in FIG. 7, the exhaust ring assembly 140e can be constituted only by the side exhaust ring 150d. The exhaust ring may sometimes be disposed at the same height as or lower than the height of the chuck 120 depending on the flow of the generated flue gas.

On the other hand, in the above embodiment, the case where four side exhaust rings are provided has been described, but as shown in Fig. 8, a single side exhaust ring may be provided. 150e. Regarding the exhaust ring assembly 140f, the number of the side exhaust rings 150e can be determined in consideration of the sealing performance of the side exhaust ring 150e with respect to the plasma and the flow of the discharged flue gas.

Fig. 9 is a view showing a substrate processing apparatus according to another embodiment of the present invention.

Referring to FIG. 9, the substrate processing apparatus 40 can provide a capacitively coupled plasma (CCP) type device. The substrate processing apparatus 40 includes a step chamber 510, a chuck 520, a lower electrode 530, a power source 540, a blocking plate 550, a gas supply portion 560, and an exhaust ring assembly 560.

The step chamber 510 has a space formed therein. The chuck 520 supports the substrate W inside the step chamber 510. A lower electrode 530 is disposed inside the chuck 520. The lower electrode 530 is connected to the external power source 540. The baffle 550 is located at an upper portion of the chuck 520, and the bottom surface is located opposite the upper surface of the chuck 530. A buffer space 551 is formed inside the barrier 550, and a distribution hole 552 is formed in the bottom surface. The barrier 550 is grounded and is provided as an upper electrode. The gas supply unit 560 is connected to the barrier 550 and supplies the step gas to the buffer space 551. After the step gas is diffused in the buffer space 551, it is supplied to the processing space 511 inside the step chamber 510 via the distribution hole 552. Electric power is applied to the lower electrode 530, whereby the step gas remaining in the processing space 511 is excited to a plasma state by the electric field formed between the resist plate 550 and the chuck 520.

The exhaust ring assembly 570 includes a side exhaust ring 610 and a lower exhaust ring 620. The side exhaust ring 610 surrounds the processing space 511 at a position higher than the chuck 520. The lower exhaust ring 620 is located at or below the height of the chuck 520. Exhaust ring assembly 570 is as in the embodiment of Figures 3-8 above Generally, it can be provided by various combinations of a side exhaust ring and a lower exhaust ring.

The above detailed description is merely illustrative of the invention. Further, the foregoing is a description of the preferred embodiments of the invention, and the invention may be used in various other combinations, modifications and environments. That is, changes or modifications can be made within the scope of the inventive concept of the invention, the scope of the invention, and the scope of the invention. The embodiment described above is an embodiment for explaining the best mode of the technical idea of the present invention, and various modifications required for the specific field of application and use of the present invention can be made. Therefore, the detailed description of the invention above is not intended to limit the invention to the disclosed embodiments. Further, it should be construed that the scope of the accompanying patent application also includes other embodiments.

30‧‧‧Substrate processing unit

100‧‧‧Step Processing Department

110‧‧‧Step chamber

111‧‧‧ Subject

112, 151, 161‧‧ vents

113‧‧‧Exhaust line

114‧‧‧Processing space

115‧‧‧Closed cover

116, 221‧‧‧ Sensing space

120‧‧‧ chuck

130‧‧‧resistance board

131‧‧‧Distribution holes

140‧‧‧Exhaust ring assembly

150‧‧‧ side exhaust ring

160‧‧‧Lower exhaust ring

200‧‧‧ Plasma Supply Department

210‧‧‧Reactor

211‧‧‧ discharge space

220‧‧‧ gas injection port

230‧‧‧Induction coil

240‧‧‧Power supply

250‧‧‧Gas Supply Department

W‧‧‧Substrate

Claims (22)

A substrate processing apparatus comprising: a step chamber; a chuck located inside the step chamber and supporting a substrate; a resist plate disposed opposite to the chuck to an upper portion of the chuck and formed with a distribution a distribution hole for supplying the step gas to the inside of the step chamber; and a ring-shaped side exhaust ring disposed at a position higher than the chuck, surrounding a processing space into which the gas flows in through the distribution hole, and A vent hole is formed. The substrate processing apparatus according to claim 1, wherein the plurality of side exhaust rings are stacked in the vertical direction while being spaced apart from each other. The substrate processing apparatus according to claim 2, wherein the exhaust holes of the side exhaust ring are arranged on the same straight line in the vertical direction. The substrate processing apparatus according to claim 2, wherein the exhaust holes of the side exhaust ring are not arranged on the same straight line in the vertical direction. The substrate processing apparatus according to claim 2, wherein the side exhaust ring is divided into at least two or more groups; and the exhaust holes of the side exhaust rings belonging to the same group are vertically arranged The vent holes that are arranged on the same straight line and belong to the side exhaust ring of the other group are not arranged on the same straight line in the up and down direction. The substrate processing apparatus according to claim 2, wherein The side exhaust ring has first to fourth side exhaust rings sequentially stacked from bottom to top; exhaust holes of the first side exhaust ring and exhaust of the third side exhaust ring The holes are arranged on the same straight line in the vertical direction; the exhaust holes of the second side exhaust ring and the exhaust holes of the fourth side exhaust ring are arranged on the same straight line in the vertical direction; The exhaust hole of the one side exhaust ring and the exhaust hole of the second side exhaust ring are not arranged on the same straight line in the vertical direction. The substrate processing apparatus according to any one of claims 1 to 6, further comprising a lower exhaust ring provided at the same height as or lower than the height of the chuck, and formed with Vent. The substrate processing apparatus according to claim 7, wherein at least two or more of the lower exhaust rings are provided, and the lower exhaust ring is stacked in a vertical direction; the exhaust hole edge of the lower exhaust ring Arranged on the same line in the up and down direction. The substrate processing apparatus according to claim 7, wherein at least two or more of the lower exhaust rings are provided, and the lower exhaust ring is stacked in the vertical direction; the exhaust hole of the lower exhaust ring is not Arrange on the same line in the up and down direction. A substrate processing apparatus comprising: a step chamber having a space formed therein; a chuck located inside the step chamber and supporting the substrate; a plasma generating portion having a discharge space for generating plasma, and supplying plasma to the inside of the step chamber; a resisting plate located at an upper portion of the chuck and formed with electricity distributed to the inside of the step chamber a distribution hole of the slurry; and a ring-shaped side exhaust ring disposed at a position higher than the chuck, surrounding a processing space into which the plasma passing through the distribution hole flows, and a vent hole formed therein. The substrate processing apparatus according to claim 10, further comprising a lower exhaust ring located at a height equal to or lower than a height of the chuck and having a vent hole formed therein. The substrate processing apparatus according to claim 10 or 11, wherein a plurality of the side exhaust rings are provided, and the side exhaust rings are stacked in the vertical direction. The substrate processing apparatus according to claim 12, wherein the exhaust holes of the side exhaust ring are arranged on the same straight line in the vertical direction. The substrate processing apparatus according to claim 12, wherein the exhaust holes of the side exhaust ring are not arranged on the same straight line in the vertical direction. The substrate processing apparatus according to claim 11, wherein the exhaust hole of the side exhaust ring and the exhaust hole of the lower exhaust ring are arranged on the same straight line in the vertical direction. The substrate processing apparatus according to claim 11, wherein the exhaust hole of the side exhaust ring and the exhaust hole of the lower exhaust ring are not along The lower direction is arranged on the same line. An exhaust ring assembly comprising a ring-shaped side exhaust ring, the ring-shaped side exhaust ring being disposed at a position higher than a chuck on which the substrate is placed, surrounding an upper region of the chuck, and forming an exhaust gas hole. The exhaust ring assembly of claim 17, further comprising a ring-shaped exhaust ring, the side exhaust ring of the ring shape being disposed at the same height as or lower than the height of the chuck, and A vent hole is formed. The exhaust ring assembly according to claim 17 or 18, wherein a plurality of the side exhaust rings are provided, and the side exhaust rings are stacked in the vertical direction. The exhaust ring assembly according to claim 19, wherein the exhaust holes of the side exhaust ring are arranged on the same straight line in the vertical direction. The exhaust ring assembly according to claim 19, wherein the exhaust holes of the side exhaust ring are not arranged on the same straight line in the vertical direction. The exhaust ring assembly according to claim 19, wherein the side exhaust ring is divided into at least two or more groups; and the exhaust holes of the side exhaust rings belonging to the same group are vertically arranged Arranged on the same straight line, the exhaust holes of the side exhaust rings belonging to the other groups are not arranged on the same straight line in the up and down direction.