CN104124187A - Exhaust ring assembly and substrate processing device having same - Google Patents
Exhaust ring assembly and substrate processing device having same Download PDFInfo
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- CN104124187A CN104124187A CN201410166157.1A CN201410166157A CN104124187A CN 104124187 A CN104124187 A CN 104124187A CN 201410166157 A CN201410166157 A CN 201410166157A CN 104124187 A CN104124187 A CN 104124187A
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- air exhaust
- exhaust loop
- steam vent
- vertical direction
- along
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- 239000000758 substrate Substances 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 claims description 84
- 238000011282 treatment Methods 0.000 claims description 59
- 230000000712 assembly Effects 0.000 claims 5
- 238000000429 assembly Methods 0.000 claims 5
- 239000007789 gas Substances 0.000 description 34
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 17
- 239000003546 flue gas Substances 0.000 description 17
- 230000005540 biological transmission Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 230000006698 induction Effects 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to substrate processing device comprising the following elements: a processing cavity; a card disc arranged in the processing cavity and supporting the substrate; a stop plate arranged on an upper portion of the card disc corresponding to the card disc, and provided with a distribution hole distributing and supplying technical gas to the processing cavity; a side exhaust ring positioned in a higher position above the card disc and encircling a processing room of the technical gas entered from the distribution hole, and is formed in an annular shape with an exhaust hole.
Description
Technical field
The present invention relates to a kind of substrate board treatment, more particularly, relate to a kind of substrate board treatment that comprises air exhaust loop assembly.
Background technology
Plasma refers to and consists of ion or electronics, free radical (Radical) etc., Ionized gaseous state occurs.Plasma can be by very high temperature, very strong electric field or electromagnetic field of high frequency (RF Electromagnetic Fields) and is produced.
Above-mentioned plasma is used in many ways in offset printing (lithography) technique of using photoresist (photoresist), and described technique is to carry out in order to prepare semiconductor element.As an example, when it forms circuit pattern as fine in line (line) or space (space) pattern etc. on substrate, or the availability of removing in ashing (ashing) technique of the photoresist using as mask (mask) in Implantation (ion implantation) technique increases gradually.
Korea S's publication discloses a kind of plasma that utilizes for No. 10-2007-0118482 and substrate has been carried out to the device of PROCESS FOR TREATMENT.The central configuration of the process chamber of this device has electrostatic chuck, and the surrounding of electrostatic chuck disposes exhaust component, thereby can Exhaust Gas.Because the mobile meeting of the gas of discharging by exhaust component changes, control exhaust component and can have a huge impact for the homogeneity of technique.
If the disclosed exhaust component of above-mentioned publication, it is limited in one's ability that it makes that gas uniform flows, so the mobile of gas can be partial to, thereby cause the homogeneity of technique poor.And most process gas is discharged by exhaust component with flow velocity faster, the time that stays in process chamber inside is shorter, so process efficiency is also lower.
prior art document
Patent documentation: No. 10-2007-0118482nd, Korea S's publication
Summary of the invention
the technical problem to be solved in the present invention
The invention provides a kind of substrate board treatment that improves processing substrate efficiency.
And, the invention provides a kind of substrate board treatment that can lifting process homogeneity.
And, the invention provides a kind of air exhaust loop assembly that promotes the discharge effect of flue gas.
technical scheme
Substrate board treatment according to the embodiment of the present invention, comprising: process chamber; Chuck, it is positioned at the inside of above-mentioned process chamber, and support substrate; Baffle plate, is relatively disposed at the top of above-mentioned chuck with above-mentioned chuck, and is formed with the dispensing orifice providing to the process gas of above-mentioned process chamber inside can be provided; And sidepiece air exhaust loop, it is positioned at the position higher than above-mentioned chuck, the processing space flowing into around the process gas through above-mentioned dispensing orifice, and it is the ring-type that is formed with steam vent.
And a plurality of above-mentioned sidepiece air exhaust loops can compartment of terrain, occurs along the vertical direction stacked.
And the steam vent of above-mentioned sidepiece air exhaust loop can along the vertical direction, be arranged on same straight line.
And the steam vent of above-mentioned sidepiece air exhaust loop can not along the vertical direction, be arranged on same straight line.
And, above-mentioned sidepiece air exhaust loop at least can be divided into plural group, the above-mentioned steam vent that belongs to the above-mentioned sidepiece air exhaust loop of same group is arranged on same straight line along the vertical direction, and with the steam vent that belongs to the above-mentioned sidepiece air exhaust loop of other groups, can not along the vertical direction, be arranged on same straight line.
And above-mentioned sidepiece air exhaust loop has from bottom to top the 1st stacked in order sidepiece air exhaust loop to the 4 sidepiece air exhaust loops, the steam vent of the steam vent of above-mentioned the 1st sidepiece air exhaust loop and above-mentioned the 3rd sidepiece air exhaust loop is arranged on same straight line along the vertical direction; The steam vent of the steam vent of above-mentioned the 2nd sidepiece air exhaust loop and above-mentioned the 4th sidepiece air exhaust loop is arranged on same straight line along the vertical direction; And the steam vent of the steam vent of above-mentioned the 1st sidepiece air exhaust loop and above-mentioned the 2nd sidepiece air exhaust loop can not along the vertical direction, be arranged on same straight line.
And, can further comprise: bottom air exhaust loop, than above-mentioned chuck, it is arranged at the position of equal height or lower position, and it is formed with steam vent.
And, plural above-mentioned bottom air exhaust loop is at least provided, can compartment of terrain, occur along the vertical direction stackedly, and the steam vent of above-mentioned bottom air exhaust loop can along the vertical direction, be arranged on same straight line.
And, plural above-mentioned bottom air exhaust loop is at least provided, can compartment of terrain, occur along the vertical direction stackedly, the steam vent of above-mentioned bottom air exhaust loop can not along the vertical direction, be arranged on same straight line.
Substrate board treatment according to another embodiment of the present invention, it comprises: process chamber, its inside is formed with space; Chuck, it is positioned at the inside of above-mentioned process chamber, and support substrate; Plasma generating unit, it has the discharge space that can produce plasma, plasma can be provided to inner to above-mentioned process chamber; Baffle plate, it is positioned at the top of above-mentioned chuck, and is formed with the dispensing orifice providing to the plasma of above-mentioned process chamber inside can be provided; And sidepiece air exhaust loop, it is positioned at the position higher than above-mentioned chuck, the processing space flowing into around the plasma by above-mentioned dispensing orifice, and it is the ring-type that is formed with steam vent.
And, can further comprise: bottom air exhaust loop, than described chuck, it is arranged at the position of equal height or lower position, and it is formed with steam vent.
And, a plurality of above-mentioned sidepiece air exhaust loops are provided, it can compartment of terrain, occurs along the vertical direction stacked.
And the steam vent of above-mentioned sidepiece air exhaust loop can along the vertical direction, be arranged on same straight line.
And the steam vent of above-mentioned sidepiece air exhaust loop can not along the vertical direction, be arranged on same straight line.
And the steam vent of the steam vent of above-mentioned sidepiece air exhaust loop and above-mentioned bottom air exhaust loop can along the vertical direction, be arranged on same straight line.
And the steam vent of the steam vent of above-mentioned sidepiece air exhaust loop and above-mentioned bottom air exhaust loop can not along the vertical direction, be arranged on same straight line.
Air exhaust loop assembly according to the embodiment of the present invention, can comprise: sidepiece air exhaust loop, and it is disposed at the higher position of chuck of placing substrate, and around the upper area of above-mentioned chuck, and it is the ring-type that is formed with steam vent.
And, can further comprise: bottom air exhaust loop, than above-mentioned chuck, it is arranged at the position of equal height or lower position, and it is the ring-type that is formed with steam vent.
And, a plurality of above-mentioned sidepiece air exhaust loops are provided, it can compartment of terrain, occurs along the vertical direction stacked.
And the steam vent of above-mentioned sidepiece air exhaust loop can along the vertical direction, be arranged on same straight line.
And the steam vent of above-mentioned sidepiece air exhaust loop can not along the vertical direction, be arranged on same straight line.
And, above-mentioned sidepiece air exhaust loop at least can be divided into plural group, the above-mentioned steam vent that belongs to the above-mentioned sidepiece air exhaust loop of same group is arranged on same straight line along the vertical direction, and with the steam vent that belongs to the above-mentioned sidepiece air exhaust loop of other groups, can not along the vertical direction, be arranged on same straight line.
beneficial effect
According to embodiments of the invention, promoted the function that process gas is stopped of air exhaust loop assembly, thereby processing substrate efficiency promotes thereupon.
And according to embodiments of the invention, the flow rate of the flue gas that substrate is experienced slows down, therefore can lifting process homogeneity.
And, according to the present invention, can improve flowing of flue gas, thereby promote the discharge effect of flue gas.
Accompanying drawing explanation
Fig. 1 is that brief description is according to the plane graph of substrate processing apparatus of the present invention.
Fig. 2 is the brief description cutaway view of substrate board treatment according to an embodiment of the invention.
Fig. 3 to Fig. 8 is the accompanying drawing of the A part of enlarged drawing 2, represents the air exhaust loop assembly of the various embodiments according to the present invention.
Fig. 9 means according to the accompanying drawing of the substrate board treatment of the embodiment of the present invention.
Embodiment
Below, in connection with accompanying drawing, describe embodiments of the invention in detail.Can there is the distortion of variform in embodiments of the invention, and scope of the present invention can not be interpreted as only limiting to following embodiment.The present embodiment is only for the technical staff to having this area general knowledge more clearly illustrates that the present invention provides.Therefore,, in order to emphasize and clearer and more definite explanation, represented turgidly the form of key element in accompanying drawing.
Fig. 1 is that brief description is according to the plane graph of substrate processing apparatus of the present invention.Referring to Fig. 1, substrate processing apparatus 1 comprises: front equipment end module (equipment front end module, EFEM) 10; And processing chamber 20.Front equipment end module 10 is disposed at a direction with processing chamber 20.Below, the direction that front equipment end module 10 and processing chamber 20 arranged is defined as the 1st direction X, and will observe from top time, perpendicular to the direction of the 1st direction X, is defined as the 2nd direction Y.
Front equipment end module 10 is disposed at the place ahead of processing chamber 20, transfers substrate W accommodating between the carrier 16 of substrate and processing chamber 20.Front equipment end module 10 comprises: load port 12 and framework 14.
Load port 12 is disposed at the place ahead of framework 14, and a plurality of load ports 12 can be provided.Load port 12 space certain distances, along the 2nd direction Y, are arranged in row.Carrier 16 (for example wafer cassette, front open type wafer box (FOUP) etc.) is installed on respectively load port 12.Carrier 16 can hold the substrate W that will carry out PROCESS FOR TREATMENT and the substrate W that completes PROCESS FOR TREATMENT.
Framework 14 is disposed at load port 12 and loads between locking chamber 22.The internal configurations of framework 14 has and can and load the handover mechanical arm 18 of transferring substrate between locking chamber 22 at load port 12.Transferring mechanical arm 18 can move along transfer track 19, and wherein transfer track 19 configures along the 2nd direction Y.
Processing chamber 20 can comprise: load locking chamber 22; Transmission cavity 24; And a plurality of substrate board treatments 30.
Load locking chamber 22 and be disposed between transmission cavity 24 and framework 14, it is the substrate W of the pending PROCESS FOR TREATMENT before being transferred to substrate board treatment 30, or the space of wait is provided for being transferred to the carrier 16 substrate W that has completed PROCESS FOR TREATMENT before.Can provide one or more to load locking chamber 22.According to embodiment, provide two to load locking chamber 22.One is loaded locking chamber 22 and can hold and promisingly carry out PROCESS FOR TREATMENT and the substrate W to substrate board treatment 30 is provided; Another loads locking chamber 22 can accommodate the substrate W that has completed technique in substrate board treatment 30.
Transmission cavity 24 is disposed at the rear of loading locking chamber 22 along the 1st direction X, while observing from top, it has polygonal body 25.Outside around body 25 disposes loading locking chamber 22 and a plurality of substrate board treatment 30.According to embodiment, while observing from top, transmission cavity 24 has the body of Magen David.Two sidewalls adjacent with front equipment end module 10 dispose respectively and load locking chamber 22, and all the other sidewalls have all configured substrate board treatment 30.Each sidewall of body 25 is formed with the passage (not shown) that substrate W can come in and go out.Passage is at transmission cavity 24 and load between locking chamber 22, or between transmission cavity 24 and substrate board treatment 30, for substrate provides the space that can come in and go out.Each passage has configured and can carry out to passage the door gear (not shown) of switch.Transmission cavity 24 can, according to needed technical module, provide with multiple different shape.
The internal configurations of transmission cavity 24 has conveyance mechanical arm 26.Conveyance mechanical arm 26 can will be transferred to substrate board treatment 30 at the standby untreatment base W of the loading interior wait in locking chamber 22, or the substrate W that has completed PROCESS FOR TREATMENT in substrate board treatment 30 is transferred to and loads locking chamber 22.Conveyance mechanical arm 26 can provide substrate W to substrate board treatment 30 according to priority.
Substrate board treatment 30 can provide the gas of plasmoid to substrate, thereby carries out PROCESS FOR TREATMENT.Plasma gas can be used in a variety of forms in semiconductor preparing process.
Below, the cineration technics carrying out with substrate board treatment 30 describes.Yet substrate board treatment 30 also can carry out the multiple techniques of utilizing plasma such as etching (etching) technique and deposition (deposition) technique, and is not limited in this.
Fig. 2 is the brief description cutaway view of substrate board treatment according to an embodiment of the invention.
With reference to Fig. 2, substrate board treatment 30 can provide inductively coupled plasma type device (Inductively Coupled Plasma:ICP).Substrate board treatment 30 comprises: PROCESS FOR TREATMENT portion 100 and plasma supply unit 200.PROCESS FOR TREATMENT portion 100 can provide the space for the treatment of substrate W, and plasma supply unit 200 can produce the plasma for substrate W treatment process, in the mode of downward following current (Down Stream), plasma is supplied to substrate W.Below, will describe each formation in detail.
PROCESS FOR TREATMENT portion 100 comprises: process chamber 110; Chuck 120; Baffle plate 130; And air exhaust loop assembly 140.
Process chamber 110 provides the space of processing.Process chamber 110 has main body 111 and closed cover 115.Opening above of main body 111, its inside is formed with space.On the sidewall of main body 111, be formed with the opening (not shown) that substrate W can come in and go out, and opening is realized and being opened and closed by switching parts such as slot door (slit door) (not shown).Open and close parts and seal opening during substrate W is processed process chamber 110 is interior, at substrate W, move into process chamber 110 inner and when take out of process chamber 110 outsides, open opening.The lower part wall of main body 111 is formed with steam vent 112.Steam vent 112 is connected with exhaust line 113.By the pressure of the adjustable process chamber of exhaust line 113 110 inside, also the flue gas producing in technical process (fume) and byproduct of reaction can be expelled to process chamber 110 outsides.
Closed cover 115 can be combined with the top wall of main body 111, cover open main body 111 above, thereby make main body 111 inner airtight.The upper end of closed cover 115 is connected with plasma supply unit 200.Closed cover 115 inside are formed with reduced space 116.Reduced space 116 is inverted funnel shaped.It can make the plasma diffusion flowing into from plasma supply unit 200, and moves to baffle plate 130.Chuck 120 is positioned at process chamber 110 inside, and it can support substrate W.Chuck 120 can provide by the electrostatic chuck of electrostatic force fixing base W (Electro Static Chuck).In addition, chuck 120 also can provide the chuck of the variforms such as vacuum chuck (Vaccum Chuck) of the fixing base W by vacuum.Chuck 120 also can form lift span (not shown).Lift span can dispose respectively lifter pin (not shown).When substrate W is on chuck 120 during load/unload, lifter pin can be along lift span generation lifting.The inside of chuck 120 can provide heater.Heater can heat substrate W, thereby maintains the temperature that is suitable for technique.
The top wall of baffle plate 130 and main body 111 is to combination.Baffle plate 130 is thinner disc-shape, the parallel arranged relatively above of itself and chuck 120.Smooth with the one side of the relative baffle plate 130 above of chuck 120.Baffle plate 130 can have the radius corresponding with substrate W.Baffle plate 130 is formed with dispensing orifice 131.Dispensing orifice 131 is the through holes that extend towards bottom surface from baffle plate 130, and it is formed at the regional of baffle plate 130 uniformly.The plasma providing to process chamber 110 inside from plasma supply unit 200, by dispensing orifice 131, can be allocated in process chamber 110 inside equably.
Air exhaust loop assembly 140 is disposed at process chamber 110 inside.Plasma is sealed in 140 performances of air exhaust loop assembly up for safekeeping, thereby makes it stay in the effect of processing space 114, and can make the flue gas that results from technical process flow equably.Processing space 114 for being positioned at the space on substrate W top, is the space through most of plasma inflow of baffle plate 130.Air exhaust loop assembly 140 can comprise: sidepiece air exhaust loop 150 and bottom air exhaust loop 160.
Sidepiece air exhaust loop 150 is circular plates of thinner thickness.The internal diameter of sidepiece air exhaust loop 150 can be corresponding with the external diameter of chuck 120, or have the radius that is greater than it.Sidepiece air exhaust loop 150 is positioned at the position higher than chuck 120.According to embodiment, a plurality of sidepiece air exhaust loops 150 can be provided, they and occur stacked relative to each other along the vertical direction.Sidepiece air exhaust loop 150 and adjacent sidepiece air exhaust loop maintain certain interval.Sidepiece air exhaust loop 150 is configurable in the region from adjacent to chuck 120 to the region adjacent to baffle plate 130.Sidepiece air exhaust loop 150 makes plasma stay in the effect of processing space 114 around processing space 114, can bringing into play.
Sidepiece air exhaust loop 150 is formed with steam vent 151.Steam vent 151 is the through holes that configure towards bottom surface from sidepiece air exhaust loop 150, and its surrounding along sidepiece air exhaust loop 150 is formed uniformly.Steam vent 151 can have circular cross-section.In addition, steam vent 151 also can other shapes form.
Be formed at respectively the steam vent 151 of sidepiece air exhaust loop 150, can be arranged in along the vertical direction on same straight line.In addition the steam vent 151 that, is formed at respectively sidepiece air exhaust loop 150 can not be arranged on same straight line along the vertical direction yet.And a part of steam vent 151 in sidepiece air exhaust loop 150 can be arranged on same straight line along the vertical direction, and all the other steam vents 151 can not be arranged on same straight line along the vertical direction.
Bottom air exhaust loop 160 is circular plates of thinner thickness.Than chuck 120, bottom air exhaust loop 160 is configurable in identical height, or lower height.According to embodiment, bottom air exhaust loop 160 is positioned at the corresponding height above with chuck 120.Bottom air exhaust loop 160 has the corresponding internal diameter of external diameter with chuck 120, its surrounding along chuck 120 and configuring.Bottom air exhaust loop 160 is formed with steam vent 161.Steam vent 161 is the through holes that configure towards bottom surface from bottom air exhaust loop 160, and its surrounding along bottom air exhaust loop 160 is formed uniformly.Steam vent 161 can have circular cross-section.In addition, steam vent 161 also can other shapes form.
Plasma supply unit 200 is positioned at process chamber 110 tops, can produce plasma by process gas.Plasma supply unit 200 can comprise: reactor 210; Gas inject port 220; Induction coil 230; Power supply 240; And gas supply part 250.
Reactor 250 is cylindric, above and open underneath, inside is formed with space.The inside of reactor 210 is formed with the discharge space 211 of process gas electric discharge.The lower end of reactor 210 is connected with the upper end of closed cover 115, and discharge space 211 is connected with reduced space 116.In discharge space 211, the process gas of electric discharge flows into process chamber 110 inside by reduced space 116.
The upper end of reactor 210 and 220 combinations of gas inject port.Gas inject port 220 is connected with gas supply part 250, and inflow gas.The bottom surface of gas inject port 220 is formed with reduced space 221.Reduced space 211 be inverted funnel shaped, communicate with discharge space 211.The gas that flows into reduced space 221 spreads, and flows into discharge space 211.
More than 230 surrounding along reactor 210 of induction coil is wound in reactor 210.One end of induction coil 230 is connected with power supply 240, other end ground connection.Power supply 240 applies high frequency electric source or microwave power supply to induction coil 230.
Gas supply part 250 provides gas to discharge space 211.The process gas that is stored in gaseous storage portion 251 provides to discharge space 211 by gas supply pipe line 252.
Process gas can comprise and is selected from NH
3, O
2, N
2, H
3, NF
3cH
4in more than one.Process gas can carry out cineration technics.
Fig. 3 to Fig. 8 is the accompanying drawing of enlarged drawing 2A, represents the air exhaust loop assembly of the various embodiments according to the present invention.
First, with reference to Fig. 3, air exhaust loop assembly 140a comprises a plurality of sidepiece air exhaust loop 150a and single bottom air exhaust loop 160a.Sidepiece air exhaust loop 150a can provide 4 sidepiece air exhaust loops 311,312,313,314.The steam vent 321,322,323,324 of sidepiece air exhaust loop 311,312,313,314 is not in alignment with each other along the vertical direction.And the steam vent 321,322,323,324 of sidepiece air exhaust loop 311,312,313,314 can not align with the steam vent 161 of bottom air exhaust loop 160a yet.Now, sidepiece air exhaust loop 311,312,313,314 makes to process the functional promotion that the plasma in space 114 stops, for example, therefore processing substrate rate (ash rate) also promotes thereupon.And the flow rate of the flue gas that substrate W experiences also reduces, so technique homogeneity promotes.
With reference to Fig. 4, different from the embodiment of Fig. 3, the steam vent 341,342,343,344 of sidepiece air exhaust loop 331,332,333,334 aligns along the vertical direction.And the steam vent 341,342,343,344 of sidepiece air exhaust loop 331,332,333,334 also can align with the steam vent 162 of bottom air exhaust loop 160b.Now, to processing the discharge effect excellence of the flue gas of space 114 interior generations, flowing of flue gas is also more even.And the flow rate of the flue gas that substrate W experiences also reduces, so technique homogeneity promotes.
With reference to Fig. 5, whether what sidepiece air exhaust loop 150c can be according to steam vent is distinguished into a plurality of groups to it.According to embodiment, sidepiece air exhaust loop 150c is sidepiece air exhaust loop 351,352,353,354 from bottom to top, and it occurs stacked in order.Be formed at the steam vent 361,363 of the 1st sidepiece air exhaust loop 351 and the 3rd sidepiece air exhaust loop 353 along the vertical direction, be arranged on same straight line, be therefore regarded as same group.And the steam vent 362,364 that is formed at the 2nd sidepiece air exhaust loop 352 and the 4th sidepiece air exhaust loop 354 is along the vertical direction, be arranged on same straight line, be therefore regarded as same group.And the steam vent 361,363 of the 1st air exhaust loop 351 and the 3rd sidepiece air exhaust loop 353 and the steam vent 362,364 of the 2nd sidepiece air exhaust loop 352 and the 4th sidepiece air exhaust loop 354 be not mutually to it, be therefore considered to be different groups.The sidepiece air exhaust loop 351,352,353,354 that steam vent 361,362,363,364 does not line up each other can the form configuration of alternate repetition ground.In being contained in the sidepiece air exhaust loop 150c of same group, the mobile phase of flue gas is similar, and on the contrary, in being contained in the sidepiece air exhaust loop 150c of different groups, flowing of flue gas occurs with different forms.Now, not only sidepiece air exhaust loop 150c makes the functional promotion that plasma stops in processing space, and also, owing to having improved flowing of flue gas, it is discharged effect and also will promote.And the flow rate of the flue gas that substrate W experiences slows down, therefore can promote processing substrate homogeneity.
And, a plurality of bottom air exhaust loop 160b can be provided.Air exhaust loop 160b compartment of terrain, bottom, occurs stacked along the vertical direction.According to embodiment, two bottom air exhaust loops 171,172 can be surrounded on chuck around.The steam vent 181,182 that is formed at bottom air exhaust loop 171,172 can along the vertical direction, be arranged on same straight line.These steam vents 181,182 can improve flowing of flue gas.
Unlike this, the steam vent 183,184 of the bottom air exhaust loop 173,174 of Fig. 6 can not along the vertical direction, be arranged on same straight line.
As shown in Figure 7, air exhaust loop assembly 140e can only consist of sidepiece air exhaust loop 150d.According to flowing of the flue gas producing, can in the position of the equal height than chuck 120 or lower position, not form air exhaust loop.
And, in above-described embodiment, the situation that provides 4 sidepiece air exhaust loops has only been described, but as shown in Figure 8, also can only provides a sidepiece air exhaust loop 150e.Air exhaust loop assembly 140f can consider that sidepiece air exhaust loop 150e makes flowing of the plasma performance stopping and the flue gas of discharging, thereby determines the quantity of sidepiece air exhaust loop 150e.
Fig. 9 means according to the accompanying drawing of the substrate board treatment of the embodiment of the present invention.
With reference to Fig. 9, substrate board treatment 40 may be configured with capacitance coupling plasma (Capacitively Coupled Plasma:CCP) type device.Substrate board treatment 40 comprises: process chamber 510; Chuck 520; Lower electrode 530; Power supply 540; Baffle plate 550; Gas supply part 560; And air exhaust loop assembly 560.
The formation space, inside of process chamber 510.Chuck 520 is at the internal support substrate W of process chamber 510.The internal configurations of chuck 520 has lower electrode 530.Lower electrode 530 is connected in external power source 540.Baffle plate 550 is positioned at the top of chuck 520, and its bottom surface is relative with the top of chuck 520.The inside of baffle plate 550 forms cushion space 551, and bottom surface is formed with dispensing orifice 552.Baffle plate 550 ground connection, are set to be upper electrode.Gas supply part 560 is connected in baffle plate 550, to cushion space 551, provides process gas.Process gas, after cushion space 551 diffusions, provides to the processing space 511 of process chamber 510 inside by dispensing orifice 552.Stay in the process gas of processing space 511, because lower electrode 530 applies electric power, by being formed at the electric field between baffle plate 550 and chuck 520, be activated into plasmoid.
Air exhaust loop assembly 570 comprises sidepiece air exhaust loop 610 and bottom air exhaust loop 620.Sidepiece air exhaust loop 610 than the higher position ring of chuck 520 around processing space 511.Than chuck 520, bottom air exhaust loop 620 is disposed at the position of equal height, or lower position.Air exhaust loop assembly 570 also can be identical with the embodiment of above-mentioned Fig. 3 to Fig. 8, disposes the multiple combination of sidepiece air exhaust loop and bottom air exhaust loop.
Above detailed description is only illustration the present invention.And foregoing represents preferred example of the present invention, and the present invention can use under multiple different combination, change and environment.In this manual in the scope of the concept and range of invention disclosed, the scope being equal to above-mentioned disclosure and/or art technology or knowledge, can change or revise.Above-described embodiment is the optimum state of the present invention illustrating in order to embody technological thought of the present invention, can be according to the present invention concrete suitable application area and purposes, carry out needed numerous variations.Therefore, above detailed description of the invention is not with disclosed enforcement state restriction the present invention.And, should be interpreted as appending claims and also can comprise other enforcement states.
reference numeral
1: substrate processing apparatus
10: front equipment end module
12: load port
14: framework
16: carrier
18: transfer manipulator
19: transfer track
20: processing chamber
22: load locking chamber
24: transmission cavity
25: body
26: conveyance mechanical arm
30,40: substrate board treatment
100: PROCESS FOR TREATMENT portion
110,510: process chamber
111: main body
112、151、161、162、181、182、
183、184、321、322、323、324、
341、342、343、344、361、362、
363,364: steam vent
113: exhaust line
114,511: process space
115: closed cover
116,221: reduced space
120,520: chuck
130,550: baffle plate
131,552: dispensing orifice
140,140a, 140e, 140f, 570: air exhaust loop assembly
150、150a、150c、150d、150e、
311、312、313、314、331、332、
333,334,610: sidepiece air exhaust loop
160、160a、160b、170、171、
172,173,174,620: bottom air exhaust loop
200: plasma supply unit
210: reactor
211: discharge space
220: gas inject port
230: induction coil
240,540: power supply
250,560: gas supply part
351: the 1 sidepiece air exhaust loops
352: the 2 sidepiece air exhaust loops
353: the 3 sidepiece air exhaust loops
354: the 4 sidepiece air exhaust loops
530: lower electrode
551: cushion space
W: substrate
X: the 1st direction
Y: the 2nd direction
Claims (22)
1. a substrate board treatment, is characterized in that, comprising:
Process chamber;
Chuck, it is positioned at the inside of described process chamber, and support substrate;
Baffle plate, is relatively disposed at the top of described chuck with described chuck, and is formed with the dispensing orifice providing to the process gas of described process chamber inside can be provided; And
Sidepiece air exhaust loop, it is positioned at the position higher than described chuck, the processing space flowing into around the process gas through described dispensing orifice, and it is the ring-type that is formed with steam vent.
2. substrate board treatment according to claim 1, is characterized in that, a plurality of described sidepiece air exhaust loops compartment of terrain, occurs stacked along the vertical direction.
3. substrate board treatment according to claim 2, is characterized in that, the steam vent of described sidepiece air exhaust loop along the vertical direction, is arranged on same straight line.
4. substrate board treatment according to claim 2, is characterized in that, the steam vent of described sidepiece air exhaust loop not along the vertical direction, is arranged on same straight line.
5. substrate board treatment according to claim 2, it is characterized in that, described sidepiece air exhaust loop is at least divided into plural group, the described steam vent that belongs to the described sidepiece air exhaust loop of same group is arranged on same straight line along the vertical direction, and with the steam vent that belongs to the described sidepiece air exhaust loop of other groups, along the vertical direction, be not arranged on same straight line.
6. substrate board treatment according to claim 2, it is characterized in that, described sidepiece air exhaust loop has from bottom to top the 1st stacked in order sidepiece air exhaust loop to the 4 sidepiece air exhaust loops, and the steam vent of the steam vent of described the 1st sidepiece air exhaust loop and described the 3rd sidepiece air exhaust loop is arranged on same straight line along the vertical direction; The steam vent of the steam vent of described the 2nd sidepiece air exhaust loop and described the 4th sidepiece air exhaust loop is arranged on same straight line along the vertical direction; And the steam vent of the steam vent of described the 1st sidepiece air exhaust loop and described the 2nd sidepiece air exhaust loop can not along the vertical direction, be arranged on same straight line.
7. according to the substrate board treatment described in any one of claim 1 to 6, it is characterized in that, comprising: bottom air exhaust loop, than described chuck, it is arranged at the position of equal height or lower position, and it is formed with steam vent.
8. substrate board treatment according to claim 7, is characterized in that, plural described bottom air exhaust loop is at least provided, it at each interval, occur along the vertical direction stackedly, and the steam vent of described bottom air exhaust loop along the vertical direction, is arranged on same straight line.
9. substrate board treatment according to claim 7, is characterized in that, plural described bottom air exhaust loop is at least provided, it at each interval, occur along the vertical direction stackedly, the steam vent of described bottom air exhaust loop can not along the vertical direction, be arranged on same straight line.
10. a substrate board treatment, is characterized in that, it comprises:
Process chamber, its inside is formed with space;
Chuck, it is positioned at the inside of described process chamber, and support substrate;
Plasma generating unit, it has the discharge space that can produce plasma, plasma can be provided to inner to described process chamber;
Baffle plate, it is positioned at the top of described chuck, and is formed with the dispensing orifice providing to the plasma of described process chamber inside can be provided; And
Sidepiece air exhaust loop, it is positioned at the position higher than described chuck, the processing space flowing into around the plasma by described dispensing orifice, and it is the ring-type that is formed with steam vent.
11. substrate board treatments according to claim 10, is characterized in that, comprising: bottom air exhaust loop, than described chuck, it is arranged at the position of equal height or lower position, and it is formed with steam vent.
12. according to the substrate board treatment described in claim 10 or 11, it is characterized in that, a plurality of described sidepiece air exhaust loops are provided, and it occurs stacked at each interval along the vertical direction.
13. substrate board treatments according to claim 12, is characterized in that, the steam vent of described sidepiece air exhaust loop along the vertical direction, is arranged on same straight line.
14. substrate board treatments according to claim 12, is characterized in that, the steam vent of described sidepiece air exhaust loop not along the vertical direction, is arranged on same straight line.
15. substrate board treatments according to claim 11, is characterized in that, the steam vent of the steam vent of described sidepiece air exhaust loop and described bottom air exhaust loop along the vertical direction, is arranged on same straight line.
16. substrate board treatments according to claim 11, is characterized in that, the steam vent of the steam vent of described sidepiece air exhaust loop and described bottom air exhaust loop not along the vertical direction, is arranged on same straight line.
17. 1 kinds of air exhaust loop assemblies, is characterized in that, comprising: sidepiece air exhaust loop, and it is disposed at the higher position of chuck of placing substrate, and around the upper area of described chuck, and it is the ring-type that is formed with steam vent.
18. air exhaust loop assemblies according to claim 17, is characterized in that, further comprise: bottom air exhaust loop, than described chuck, it is arranged at the position of equal height or lower position, and it is the ring-type that is formed with steam vent.
19. according to the air exhaust loop assembly described in claim 17 or 18, it is characterized in that, a plurality of described sidepiece air exhaust loops are provided, and it occurs stacked at each interval along the vertical direction.
20. air exhaust loop assemblies according to claim 19, is characterized in that, the steam vent of described sidepiece air exhaust loop along the vertical direction, is arranged on same straight line.
21. air exhaust loop assemblies according to claim 19, is characterized in that, the steam vent of described sidepiece air exhaust loop not along the vertical direction, is arranged on same straight line.
22. air exhaust loop assemblies according to claim 19, it is characterized in that, described sidepiece air exhaust loop is at least divided into plural group, the steam vent that belongs to the described sidepiece air exhaust loop of same group is arranged on same straight line along the vertical direction, and with the steam vent that belongs to the described sidepiece air exhaust loop of other groups, along the vertical direction, be not arranged on same straight line.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130044964A KR101445226B1 (en) | 2013-04-23 | 2013-04-23 | Exhaust ring assembly and apparatus for treating including the assembly |
| KR10-2013-0044964 | 2013-04-23 |
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| Publication Number | Publication Date |
|---|---|
| CN104124187A true CN104124187A (en) | 2014-10-29 |
| CN104124187B CN104124187B (en) | 2017-10-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410166157.1A Expired - Fee Related CN104124187B (en) | 2013-04-23 | 2014-04-23 | It is vented ring assemblies and the substrate board treatment comprising it |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2014216644A (en) |
| KR (1) | KR101445226B1 (en) |
| CN (1) | CN104124187B (en) |
| TW (1) | TWI520261B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101503256B1 (en) | 2014-10-10 | 2015-03-18 | (주) 일하하이텍 | Apparatus and method of processing substrate |
| KR101629213B1 (en) * | 2015-02-02 | 2016-06-10 | (주) 일하하이텍 | Apparatus and method of processing substrate |
| JP6837911B2 (en) | 2017-05-17 | 2021-03-03 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment equipment |
| US11972957B2 (en) * | 2020-07-31 | 2024-04-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gas flow accelerator to prevent buildup of processing byproduct in a main pumping line of a semiconductor processing tool |
| CN115763324B (en) * | 2023-01-05 | 2023-05-05 | 无锡先为科技有限公司 | Wafer reaction device and semiconductor manufacturing equipment with same |
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| CN1461494A (en) * | 2000-11-10 | 2003-12-10 | 东京毅力科创株式会社 | Plasma processing device and exhaust ring |
| CN101226875A (en) * | 2007-01-17 | 2008-07-23 | Psk有限公司 | Apparatus and method for processing substrate |
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| US6051100A (en) * | 1997-10-24 | 2000-04-18 | International Business Machines Corporation | High conductance plasma containment structure |
| US20030092278A1 (en) * | 2001-11-13 | 2003-05-15 | Fink Steven T. | Plasma baffle assembly |
| KR100790392B1 (en) * | 2004-11-12 | 2008-01-02 | 삼성전자주식회사 | Device for making semiconductor |
| US7430986B2 (en) * | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
| KR101218052B1 (en) * | 2005-11-25 | 2013-01-18 | 주성엔지니어링(주) | Baffle, Plasma apparatus, and Method for treating substrate |
| SG178288A1 (en) * | 2009-08-31 | 2012-03-29 | Lam Res Corp | A multi-peripheral ring arrangement for performing plasma confinement |
| KR20110062534A (en) * | 2009-12-03 | 2011-06-10 | 세메스 주식회사 | Plasma treatment apparatus |
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Patent Citations (5)
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| CN1461494A (en) * | 2000-11-10 | 2003-12-10 | 东京毅力科创株式会社 | Plasma processing device and exhaust ring |
| CN101226875A (en) * | 2007-01-17 | 2008-07-23 | Psk有限公司 | Apparatus and method for processing substrate |
| US20100239756A1 (en) * | 2007-09-28 | 2010-09-23 | Tokyo Electron Limited | Plasma processing apparatus and gas exhaust method |
| CN101441981A (en) * | 2007-11-20 | 2009-05-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Stereo air exhaust loop and plasma processing apparatus |
| US20120000886A1 (en) * | 2010-07-05 | 2012-01-05 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014216644A (en) | 2014-11-17 |
| KR101445226B1 (en) | 2014-09-29 |
| CN104124187B (en) | 2017-10-27 |
| TW201448110A (en) | 2014-12-16 |
| TWI520261B (en) | 2016-02-01 |
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