TW201426770A - Optical member with transparent conductive layer - Google Patents

Optical member with transparent conductive layer Download PDF

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Publication number
TW201426770A
TW201426770A TW102142726A TW102142726A TW201426770A TW 201426770 A TW201426770 A TW 201426770A TW 102142726 A TW102142726 A TW 102142726A TW 102142726 A TW102142726 A TW 102142726A TW 201426770 A TW201426770 A TW 201426770A
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Taiwan
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refractive index
dielectric layer
transparent conductive
index dielectric
conductive layer
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TW102142726A
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Chinese (zh)
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Masaaki Imura
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Nippon Electric Glass Co
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02Physical, chemical or physicochemical properties
    • B32B7/023Optical properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/20Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202Conductive
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/20Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/204Di-electric
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/40Properties of the layers or laminate having particular optical properties
    • B32B2307/412Transparent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/40Properties of the layers or laminate having particular optical properties
    • B32B2307/418Refractive
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/20Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/208Touch screens

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Laminated Bodies (AREA)
  • Position Input By Displaying (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

This invention provides an optical member with a transparent conductive layer in which the transparent conductive layer is difficult to visually discern. The optical member (1) with a transparent conductive layer is provided with: a high refractive index dielectric layer (21); a patterned transparent conductive layer (23); and a low refractive index dielectric layer (22). The refractive index of the high refractive index dielectric layer (21) is 1.65 to 1.95. The transparent conductive layer (23) is arranged on top of the high refractive index dielectric layer (21). The low refractive index dielectric layer (22) is arranged between the transparent conductive layer (23) and the high refractive index dielectric layer (21). The low refractive index dielectric layer (22) has a lower refractive index than both the transparent conductive layer (23) and the high refractive index dielectric layer (21).

Description

附透明導電層之光學構件 Optical member with transparent conductive layer

本發明係關於一種附透明導電層之光學構件。 The present invention relates to an optical member with a transparent conductive layer.

先前,例如,觸控面板等使用具有經圖案化之透明導電層之光學膜。此種光學膜存在經圖案化之透明導電層被視認,觸控面板之外觀變差之問題。 Previously, for example, a touch panel or the like used an optical film having a patterned transparent conductive layer. Such an optical film has a problem that the patterned transparent conductive layer is visually recognized, and the appearance of the touch panel is deteriorated.

鑒於此,專利文獻1中,提出有藉由於膜基材與透明導電層之間,配置具有特定之折射率及厚度之第1及第2透明介電層,而降低設置有透明導電層之部分與未設置透明導電層之部分之反射率差,透明導電層難以被視認。具體而言,專利文獻1所記載之透明導電性膜中,自透明膜基材側,依序形成有第1透明介電層、第2透明介電層、及透明導電層。第1透明介電層之折射率n1大於透明導電層之折射率n3。透明導電層之折射率n3大於第2透明介電層之折射率n2。具體而言,n1為2.0~2.3。n2為1.4~1.5。n3為1.9~2.1。第1透明介電層之厚度為2nm~10nm。第2透明介電層之厚度為20nm~55nm。透明導電層之厚度為15nm~30nm。 In view of this, Patent Document 1 proposes to reduce the portion in which the transparent conductive layer is provided by disposing the first and second transparent dielectric layers having a specific refractive index and thickness between the film substrate and the transparent conductive layer. The difference in reflectance from the portion where the transparent conductive layer is not provided is difficult for the transparent conductive layer to be visually recognized. Specifically, in the transparent conductive film described in Patent Document 1, the first transparent dielectric layer, the second transparent dielectric layer, and the transparent conductive layer are sequentially formed from the transparent film substrate side. The refractive index n1 of the first transparent dielectric layer is greater than the refractive index n3 of the transparent conductive layer. The refractive index n3 of the transparent conductive layer is greater than the refractive index n2 of the second transparent dielectric layer. Specifically, n1 is 2.0 to 2.3. N2 is 1.4~1.5. N3 is 1.9~2.1. The thickness of the first transparent dielectric layer is 2 nm to 10 nm. The thickness of the second transparent dielectric layer is 20 nm to 55 nm. The transparent conductive layer has a thickness of 15 nm to 30 nm.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利第4966924號公報 [Patent Document 1] Japanese Patent No. 4966924

期望透明導電層進而難以被視認,實現更優異之外觀。 It is desirable that the transparent conductive layer is further difficult to be visualized, achieving a more excellent appearance.

本發明之主要目在於提供一種透明導電層難以被視認之附透明導電層之光學構件。 The main object of the present invention is to provide an optical member with a transparent conductive layer which is difficult to be visually recognized by a transparent conductive layer.

本發明之附透明導電層之光學構件包括高折射率介電層、經圖案化之透明導電層、及低折射率介電層。高折射率介電層之折射率為1.65~1.95。透明導電層配置於高折射率介電層之上。低折射率介電層配置於透明導電層與高折射率介電層之間。低折射率介電層之折射率較透明導電層及高折射率介電層之各者更低。 The optical member with a transparent conductive layer of the present invention comprises a high refractive index dielectric layer, a patterned transparent conductive layer, and a low refractive index dielectric layer. The refractive index of the high refractive index dielectric layer is 1.65 to 1.95. The transparent conductive layer is disposed over the high refractive index dielectric layer. The low refractive index dielectric layer is disposed between the transparent conductive layer and the high refractive index dielectric layer. The refractive index of the low refractive index dielectric layer is lower than that of each of the transparent conductive layer and the high refractive index dielectric layer.

本發明之附透明導電層之光學構件亦可進而包括第2高折射率介電層及第2低折射率介電層。第2高折射率介電層配置於透明導電層與低折射率介電層之間,折射率為1.65以上。第2低折射率介電層配置於透明導電層與第2高折射率介電層之間,折射率較透明導電層、高折射率介電層及第2高折射率介電層之各者更低。 The optical member with a transparent conductive layer of the present invention may further include a second high refractive index dielectric layer and a second low refractive index dielectric layer. The second high refractive index dielectric layer is disposed between the transparent conductive layer and the low refractive index dielectric layer, and has a refractive index of 1.65 or more. The second low refractive index dielectric layer is disposed between the transparent conductive layer and the second high refractive index dielectric layer, and has a refractive index higher than that of the transparent conductive layer, the high refractive index dielectric layer, and the second high refractive index dielectric layer. Lower.

較佳為,高折射率介電層之折射率為第2高折射率介電層之折射率以下。 Preferably, the refractive index of the high refractive index dielectric layer is equal to or lower than the refractive index of the second high refractive index dielectric layer.

較佳為,高折射率介電層及/或第2高折射率介電層之厚度為10nm以上。 Preferably, the high refractive index dielectric layer and/or the second high refractive index dielectric layer has a thickness of 10 nm or more.

較佳為,高折射率介電層及/或第2高折射率介電層之折射率為1.7以上。 Preferably, the refractive index of the high refractive index dielectric layer and/or the second high refractive index dielectric layer is 1.7 or more.

高折射率介電層及/或第2高折射率介電層亦可包括複合氧化物,該複合氧化物包含選自由Ta、Nb、Zr及Ti所組成之群中之至少一種與Si。 The high refractive index dielectric layer and/or the second high refractive index dielectric layer may further include a composite oxide containing at least one selected from the group consisting of Ta, Nb, Zr, and Ti and Si.

較佳為,低折射率介電層及/或第2低折射率介電層之折射率為1.6以下。 Preferably, the refractive index of the low refractive index dielectric layer and/or the second low refractive index dielectric layer is 1.6 or less.

低折射率介電層及/或第2低折射率介電層亦可包括氧化矽。 The low refractive index dielectric layer and/or the second low refractive index dielectric layer may also include ruthenium oxide.

較佳為,低折射率介電層及/或第2低折射率介電層之厚度為10nm以上。 Preferably, the thickness of the low refractive index dielectric layer and/or the second low refractive index dielectric layer is 10 nm or more.

較佳為,透明導電層之折射率為1.7~2.2。 Preferably, the transparent conductive layer has a refractive index of 1.7 to 2.2.

較佳為,透明導電層之厚度為15nm~200nm。 Preferably, the transparent conductive layer has a thickness of 15 nm to 200 nm.

較佳為,高折射率介電層、第2高折射率介電層、低折射率介電層及第2低折射率介電層之各者之厚度及折射率以與未設置高折射率介電層、第2高折射率介電層、低折射率介電層及第2低折射率介電層之情形相比,設置有透明導電層之區域中之光反射率與未設置透明導電層之區域中之光反射率之差變小之方式設定。 Preferably, the thickness and the refractive index of each of the high refractive index dielectric layer, the second high refractive index dielectric layer, the low refractive index dielectric layer, and the second low refractive index dielectric layer are not set to a high refractive index Compared with the case of the dielectric layer, the second high refractive index dielectric layer, the low refractive index dielectric layer, and the second low refractive index dielectric layer, the light reflectance in the region where the transparent conductive layer is provided is not provided with transparent conductive The difference in the light reflectance in the region of the layer is set to be small.

較佳為,本發明之附透明導電層之光學構件係於高折射率介電層或第2高折射率介電層之上,以覆蓋透明導電層之方式配置反射抑制層。 Preferably, the optical member with a transparent conductive layer of the present invention is applied over the high refractive index dielectric layer or the second high refractive index dielectric layer, and the reflection inhibiting layer is disposed to cover the transparent conductive layer.

根據本發明,可提供一種透明導電層難以被視認之附透明導電層之光學構件。 According to the present invention, it is possible to provide an optical member with a transparent conductive layer which is difficult to be recognized by a transparent conductive layer.

1、2‧‧‧光學構件 1, 2‧‧‧ optical components

10‧‧‧基材 10‧‧‧Substrate

11‧‧‧玻璃板 11‧‧‧ glass plate

12‧‧‧氧化矽層 12‧‧‧Oxide layer

21‧‧‧高折射率介電層 21‧‧‧High refractive index dielectric layer

22‧‧‧低折射率介電層 22‧‧‧Low-refractive-index dielectric layer

23‧‧‧透明導電層 23‧‧‧Transparent conductive layer

24‧‧‧第2高折射率介電層 24‧‧‧2nd high refractive index dielectric layer

25‧‧‧第2低折射率介電層 25‧‧‧2nd low refractive index dielectric layer

31‧‧‧黏著層 31‧‧‧Adhesive layer

32‧‧‧玻璃板 32‧‧‧ glass plate

33‧‧‧反射抑制層 33‧‧‧Reflection suppression layer

圖1係本發明之一實施形態之附透明導電層之光學構件之略圖性剖面圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing an optical member with a transparent conductive layer according to an embodiment of the present invention.

圖2係表示本發明之一實施形態之附透明導電層之光學構件之使用態樣之一例的略圖性剖面圖。 Fig. 2 is a schematic cross-sectional view showing an example of the use of an optical member with a transparent conductive layer according to an embodiment of the present invention.

圖3係表示設置有透明導電層之區域與未設置透明導電層之區域之間的波長400nm~800nm之反射率差最小之情形時之高折射率介電層之折射率與高折射率介電層之厚度之關係的圖表。 3 is a view showing a refractive index and a high refractive index dielectric of a high refractive index dielectric layer when a difference in reflectance between wavelengths of 400 nm and 800 nm is minimized between a region in which a transparent conductive layer is disposed and a region in which a transparent conductive layer is not provided. A graph of the relationship between the thicknesses of the layers.

圖4係本發明之另一實施形態之附透明導電層之光學構件之略圖性剖面圖。 Figure 4 is a schematic cross-sectional view showing an optical member with a transparent conductive layer according to another embodiment of the present invention.

圖5係表示本發明之另一實施形態之附透明導電層之光學構件之 使用態樣之一例的略圖性剖面圖。 Figure 5 is a view showing an optical member with a transparent conductive layer according to another embodiment of the present invention. A sketched profile of an example of a use case.

以下,對實施本發明之較佳之形態之一例進行說明。但,下述實施形態僅僅為例示。本發明不受下述實施形態任何限定。 Hereinafter, an example of a preferred embodiment for carrying out the invention will be described. However, the following embodiments are merely illustrative. The present invention is not limited to the following embodiments.

又,於實施形態等中所參照之各圖式中,實質上具有相同功能之構件以相同符號參照。又,實施形態等中所參照之圖式係模式性地記載者。描繪於圖式中之物體之尺寸之比率等有與現實之物體之尺寸之比率等不同之情形。於圖式彼此間,亦有物體之尺寸比率等不同之情形。具體性的物體之尺寸比率等應參考以下之說明加以判斷。 In the drawings, which are referred to in the embodiments and the like, members having substantially the same functions are referred to by the same reference numerals. Further, the drawings referred to in the embodiments and the like are schematically described. The ratio of the size of the object depicted in the drawing, etc., may be different from the ratio of the size of the actual object. Between the drawings, there are also cases where the size ratio of the objects is different. The specific size ratio of the object should be judged by referring to the following description.

圖1係本發明之一實施形態之附透明導電層之光學構件1之略圖性剖面圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing an optical member 1 with a transparent conductive layer according to an embodiment of the present invention.

如圖1所示,光學構件1具備基材10。基材10只要為具有透光性者則無特別限定。本實施形態中,基材10具有玻璃板11及設置於玻璃板11之上之氧化矽層12。氧化矽層12例如亦可具有於玻璃板11包含鹼之情形時作為鹼障壁層之功能,或作為改善下述高折射率介電層21與基材10之間之密接力之密接層之功能等。不過,基材10例如亦可僅由玻璃板而構成。又,基材10亦可藉由樹脂板或於表面形成有硬塗層等之樹脂板等而構成。 As shown in FIG. 1, the optical member 1 is provided with the base material 10. The base material 10 is not particularly limited as long as it has light transmittance. In the present embodiment, the substrate 10 has a glass plate 11 and a ruthenium oxide layer 12 provided on the glass plate 11. The ruthenium oxide layer 12 may have, for example, a function as an alkali barrier layer when the glass plate 11 contains an alkali, or a function as an adhesion layer for improving the adhesion between the high refractive index dielectric layer 21 and the substrate 10 described below. Wait. However, the substrate 10 may be formed of, for example, only a glass plate. Further, the substrate 10 may be formed of a resin plate or a resin plate having a hard coat layer or the like formed on the surface thereof.

基材10之形狀並未特別限定,本實施形態中,基材10為板狀。 The shape of the substrate 10 is not particularly limited. In the present embodiment, the substrate 10 has a plate shape.

於基材10之上設置有高折射率介電層21。高折射率介電層21之折射率為1.65~1.95。高折射率介電層21之折射率較佳為1.7以上,更佳為1.75以上。高折射率介電層21之折射率較佳為1.9以下,更佳為1.85以下。 A high refractive index dielectric layer 21 is disposed over the substrate 10. The refractive index of the high refractive index dielectric layer 21 is 1.65 to 1.95. The refractive index of the high refractive index dielectric layer 21 is preferably 1.7 or more, more preferably 1.75 or more. The refractive index of the high refractive index dielectric layer 21 is preferably 1.9 or less, more preferably 1.85 or less.

高折射率介電層21之構成材料只要折射率為1.65~1.95則無特別限定。高折射率介電層21例如可藉由複合氧化物而構成,該複合氧化物包含選自由Ta、Nb、Zr及Ti所組成之群中之至少一種與Si。作為包 含選自由Ta、Nb、Zr及Ti所組成之群中之至少一種與Si之複合氧化物之具體例,可列舉Nb與Si之複合氧化物、Ti與Si之複合氧化物、Zr與Si之複合氧化物、Ta與Si之複合氧化物等。高折射率介電層21較佳為包括選自由Ta、Nb、Zr及Ti所組成之群中之至少一種與Si之原子比(選自由Ta、Nb、Zr及Ti所組成之群中之至少一種:Si)為15:85~80:20之複合氧化物,更佳為包括該原子比為25:75~70:30之複合氧化物。 The constituent material of the high refractive index dielectric layer 21 is not particularly limited as long as the refractive index is 1.65 to 1.95. The high refractive index dielectric layer 21 can be formed, for example, by a composite oxide containing at least one selected from the group consisting of Ta, Nb, Zr, and Ti and Si. As a package Specific examples of the composite oxide containing at least one selected from the group consisting of Ta, Nb, Zr, and Ti and Si include a composite oxide of Nb and Si, a composite oxide of Ti and Si, and Zr and Si. A composite oxide, a composite oxide of Ta and Si, or the like. The high refractive index dielectric layer 21 preferably includes an atomic ratio of at least one selected from the group consisting of Ta, Nb, Zr, and Ti to Si (selected from at least one of Ta, Nb, Zr, and Ti) A: Si) is a composite oxide of 15:85 to 80:20, more preferably a composite oxide having an atomic ratio of 25:75 to 70:30.

高折射率介電層21之厚度較佳為10nm以上,更佳為12nm以上。高折射率介電層21之厚度較佳為40nm以下,更佳為35nm以下。 The thickness of the high refractive index dielectric layer 21 is preferably 10 nm or more, and more preferably 12 nm or more. The thickness of the high refractive index dielectric layer 21 is preferably 40 nm or less, more preferably 35 nm or less.

於高折射率介電層21之上配置有透明導電層23。透明導電層23經圖案化。因此,透明導電層23配置於高折射率介電層21之一部分之上,高折射率介電層21之剩餘之部分未由透明導電層23而覆蓋。 A transparent conductive layer 23 is disposed on the high refractive index dielectric layer 21. The transparent conductive layer 23 is patterned. Therefore, the transparent conductive layer 23 is disposed on a portion of the high refractive index dielectric layer 21, and the remaining portion of the high refractive index dielectric layer 21 is not covered by the transparent conductive layer 23.

透明導電層23例如可藉由透明導電性氧化物而構成。具體而言,透明導電層23亦可藉由例如銦錫氧化物(ITO)、銦鋅氧化物(IZO)、鋁鋅氧化物(AZO)、鎵鋅氧化物(GZO)等而構成。 The transparent conductive layer 23 can be formed, for example, by a transparent conductive oxide. Specifically, the transparent conductive layer 23 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), or the like.

於透明導電層23藉由透明導電性氧化物而構成之情形時,透明導電層23之折射率通常為1.7~2.2左右。又,自降低薄片電阻之觀點考慮,透明導電層23之厚度通常為15~200nm左右。若透明導電層23過厚,則光之吸收變大。因此,透明導電層23之厚度更佳為50nm以下,進而較佳為30nm以下。 When the transparent conductive layer 23 is formed of a transparent conductive oxide, the refractive index of the transparent conductive layer 23 is usually about 1.7 to 2.2. Further, from the viewpoint of reducing the sheet resistance, the thickness of the transparent conductive layer 23 is usually about 15 to 200 nm. If the transparent conductive layer 23 is too thick, the absorption of light becomes large. Therefore, the thickness of the transparent conductive layer 23 is more preferably 50 nm or less, further preferably 30 nm or less.

於透明導電層23與高折射率介電層21之間,配置有低折射率介電層22。低折射率介電層22橫跨設置有透明導電層23之區域與未設置透明導電層23之區域而設置。本實施形態中,低折射率介電層22設置於包含設置有透明導電層23之區域在內之高折射率介電層21之實質上整體之上。因此,高折射率介電層21未自低折射率介電層22露出。藉由低折射率介電層22與透明導電層23而構成光學構件1之表面。 A low refractive index dielectric layer 22 is disposed between the transparent conductive layer 23 and the high refractive index dielectric layer 21. The low refractive index dielectric layer 22 is disposed across a region where the transparent conductive layer 23 is provided and a region where the transparent conductive layer 23 is not provided. In the present embodiment, the low refractive index dielectric layer 22 is provided on substantially the entire entirety of the high refractive index dielectric layer 21 including the region in which the transparent conductive layer 23 is provided. Therefore, the high refractive index dielectric layer 21 is not exposed from the low refractive index dielectric layer 22. The surface of the optical member 1 is formed by the low refractive index dielectric layer 22 and the transparent conductive layer 23.

低折射率介電層22之折射率低於透明導電層23之折射率,且低於高折射率介電層21之折射率。低折射率介電層22之折射率較佳為1.6以下,更佳為1.55以下。低折射率介電層22之折射率通常為1.38以上。 The refractive index of the low refractive index dielectric layer 22 is lower than the refractive index of the transparent conductive layer 23 and lower than the refractive index of the high refractive index dielectric layer 21. The refractive index of the low refractive index dielectric layer 22 is preferably 1.6 or less, more preferably 1.55 or less. The refractive index of the low refractive index dielectric layer 22 is usually 1.38 or more.

低折射率介電層22可藉由例如氧化矽、氟化鎂、氟化鋇等而構成。低折射率介電層22之厚度較佳為10nm以上,更佳為20nm以上。低折射率介電層22之厚度較佳為55nm以下,較佳為50nm以下。 The low refractive index dielectric layer 22 can be formed by, for example, ruthenium oxide, magnesium fluoride, ruthenium fluoride, or the like. The thickness of the low refractive index dielectric layer 22 is preferably 10 nm or more, and more preferably 20 nm or more. The thickness of the low refractive index dielectric layer 22 is preferably 55 nm or less, preferably 50 nm or less.

圖2係表示光學構件1之使用態樣之一例之略圖性剖面圖。 Fig. 2 is a schematic cross-sectional view showing an example of the use of the optical member 1.

如圖2所示,光學構件1係可以透明導電層23側之表面藉由黏著層31而黏著於玻璃板32之態樣而使用。通常,黏著層31之折射率與玻璃板32為相同程度。較佳為,於玻璃板32之與光學構件1相反側之表面之上,設置有抑制表面之光反射之反射抑制層33。即,較佳為,於高折射率介電層21之上,以覆蓋透明導電層23之方式而設置有反射抑制層33。反射抑制層33例如可藉由具有相對較低之折射率之低折射率層與具有相對較高之折射率之高折射率層交替地積層而成之介電多層膜而構成。 As shown in FIG. 2, the optical member 1 can be used in such a manner that the surface on the side of the transparent conductive layer 23 is adhered to the glass plate 32 by the adhesive layer 31. Generally, the refractive index of the adhesive layer 31 is the same as that of the glass plate 32. Preferably, on the surface of the glass plate 32 opposite to the optical member 1, a reflection suppressing layer 33 for suppressing light reflection from the surface is provided. That is, it is preferable that the reflection suppressing layer 33 is provided on the high refractive index dielectric layer 21 so as to cover the transparent conductive layer 23. The reflection suppressing layer 33 can be formed, for example, by a dielectric multilayer film in which a low refractive index layer having a relatively low refractive index and a high refractive index layer having a relatively high refractive index are alternately laminated.

高折射率介電層21與低折射率介電層22之各者之厚度及折射率以與未設置高折射率介電層21與低折射率介電層22之情形相比,設置有透明導電層23之區域中之光反射率與未設置透明導電層23之區域中之光反射率之差變小之方式進行設定。高折射率介電層21與低折射率介電層22之各者之厚度及折射率較佳為於可見波長區域(400nm~800nm),以設置有透明導電層23之區域中之光反射率與未設置透明導電層23之區域中之光反射率之差成為最小之方式進行設定。此係因為透明導電層23難以被視認。較佳為,高折射率介電層21與低折射率介電層22之各者之厚度及折射率係於可見波長區域(400nm~800nm),以設置有透明導電層23之區域中之光反射率與未設置透明導電層23之區 域中之光反射率之差成為0.5%以下之方式進行設置,更佳為以該差成為0.3%以下之方式進行設置。 The thickness and refractive index of each of the high refractive index dielectric layer 21 and the low refractive index dielectric layer 22 are transparent as compared with the case where the high refractive index dielectric layer 21 and the low refractive index dielectric layer 22 are not provided. The difference between the light reflectance in the region of the conductive layer 23 and the light reflectance in the region where the transparent conductive layer 23 is not provided is set to be small. The thickness and refractive index of each of the high refractive index dielectric layer 21 and the low refractive index dielectric layer 22 are preferably in the visible wavelength region (400 nm to 800 nm), and the light reflectance in the region where the transparent conductive layer 23 is provided. The setting is made such that the difference in light reflectance in the region where the transparent conductive layer 23 is not provided is minimized. This is because the transparent conductive layer 23 is difficult to be visually recognized. Preferably, the thickness and the refractive index of each of the high refractive index dielectric layer 21 and the low refractive index dielectric layer 22 are in the visible wavelength region (400 nm to 800 nm) to provide light in the region of the transparent conductive layer 23. Reflectance and area where the transparent conductive layer 23 is not provided The difference between the light reflectances in the domain is set to 0.5% or less, and more preferably, the difference is set to 0.3% or less.

下述表1~表4表示光學構件1之設計例。再者,表1~表4中,「波長550nm之反射率差」為波長550nm之設置有透明導電層之區域與未設置透明導電層之區域之間之反射率差。表1~表4所示之「波長550nm之反射率差」係位於透明導電層之上之介質之折射率為1.5之情形時之反射率差之資料。高折射率介電層之材料之欄所示之比率為原子比。 Tables 1 to 4 below show design examples of the optical member 1. In addition, in Tables 1 to 4, "the difference in reflectance at a wavelength of 550 nm" is a difference in reflectance between a region where the transparent conductive layer is provided at a wavelength of 550 nm and a region where the transparent conductive layer is not provided. The "reflectance difference at a wavelength of 550 nm" shown in Tables 1 to 4 is a data of the difference in reflectance when the refractive index of the medium on the transparent conductive layer is 1.5. The ratio shown in the column of the material of the high refractive index dielectric layer is an atomic ratio.

再者,於高折射率介電層21為Ti與Si之複合氧化物之情形時,為了使高折射率介電層21之折射率為1.65~1.95,只要使Ti:Si為15:85~45:55左右即可。於高折射率介電層21為Nb與Si之複合氧化物之情形時,為了使高折射率介電層21之折射率為1.65~1.95,只要使Nb:Si為30:70~70:30左右即可。於高折射率介電層21為Zr與Si之複合氧化物之情形時,為了使高折射率介電層21之折射率為1.65~1.95,只要使Zr:Si為25:75~70:30左右即可。於高折射率介電層21為Ta與Si之複合氧化物之情形時,為了使高折射率介電層21之折射率為1.65~1.95,只要使Ta:Si為40:60~80:20左右即可。 Further, in the case where the high refractive index dielectric layer 21 is a composite oxide of Ti and Si, in order to make the refractive index of the high refractive index dielectric layer 21 1.65 to 1.95, it is only necessary to make Ti:Si 15:85~ It can be around 45:55. In the case where the high refractive index dielectric layer 21 is a composite oxide of Nb and Si, in order to make the refractive index of the high refractive index dielectric layer 21 1.65 to 1.95, the Nb:Si is 30:70 to 70:30. Just left and right. In the case where the high refractive index dielectric layer 21 is a composite oxide of Zr and Si, in order to make the refractive index of the high refractive index dielectric layer 21 1.65 to 1.95, it is only necessary to make Zr:Si 25:75 to 70:30. Just left and right. In the case where the high refractive index dielectric layer 21 is a composite oxide of Ta and Si, in order to make the refractive index of the high refractive index dielectric layer 21 1.65 to 1.95, it is necessary to make Ta:Si 40:60 to 80:20. Just left and right.

圖3表示顯示設置有透明導電層23之區域與未設置透明導電層23之區域之間的波長400nm~800nm之反射率差成為最小之情形時之高折射率介電層21之折射率與高折射率介電層21之厚度之關係的圖表。再者,圖3所示之圖表為下述之條件之圖表。 3 shows the refractive index and the high refractive index of the high refractive index dielectric layer 21 when the difference in reflectance between the region where the transparent conductive layer 23 is provided and the region where the transparent conductive layer 23 is not provided is minimized. A graph of the relationship between the thicknesses of the refractive index dielectric layers 21. Furthermore, the graph shown in Fig. 3 is a graph of the following conditions.

透明導電層23之折射率:1.83 Refractive index of transparent conductive layer 23: 1.83

透明導電層23之厚度:18nm Thickness of transparent conductive layer 23: 18 nm

玻璃板11之折射率:1.5 Refractive index of glass plate 11: 1.5

氧化矽層12之折射率:1.47 Refractive index of yttrium oxide layer 12: 1.47

氧化矽層12之厚度:10nm Thickness of the yttrium oxide layer 12: 10 nm

根據圖3所示之結果,於高折射率介電層之折射率超過1.95之情形時,為了使透明導電層難以被視認,必須使高折射率介電層之厚度未達10nm。然而,於厚度未達10nm之情形時,難以形成均勻之高折射率介電層。又,難以將高折射率介電層形成為所期望之厚度。又,若所形成之高折射率介電層之厚度自設計值偏離,則高折射率介電層之光學特性大幅變化。因此,難以穩定地製造透明導電層不易被視認之光學構件。 According to the results shown in FIG. 3, in the case where the refractive index of the high refractive index dielectric layer exceeds 1.95, in order to make the transparent conductive layer difficult to be visually recognized, the thickness of the high refractive index dielectric layer must be less than 10 nm. However, in the case where the thickness is less than 10 nm, it is difficult to form a uniform high refractive index dielectric layer. Moreover, it is difficult to form the high refractive index dielectric layer to a desired thickness. Further, if the thickness of the formed high refractive index dielectric layer deviates from the design value, the optical characteristics of the high refractive index dielectric layer largely change. Therefore, it is difficult to stably manufacture an optical member in which the transparent conductive layer is not easily recognized.

另一方面,若高折射率介電層之折射率低於1.65,則即便使高折 射率介電層之厚度變厚亦難以使設置有透明導電層之區域與未設置透明導電層之區域中之光反射率差變小。 On the other hand, if the refractive index of the high refractive index dielectric layer is lower than 1.65, even if the refractive index is high It is also difficult to make the difference in light reflectance in the region where the transparent conductive layer is provided and the region where the transparent conductive layer is not provided smaller in the thickness of the transmittance dielectric layer.

相對於此,於高折射率介電層21之折射率為1.65~1.95之光學構件1中,藉由設置厚度為10nm以上之高折射率介電層21,可使設置有透明導電層23之區域與未設置透明導電層23之區域中之光反射率差變小。又,由於可使高折射率介電層21之厚度為10nm以上,故而容易形成均勻厚度之高折射率介電層21。即便於所形成之高折射率介電層之厚度自設計值偏離時,高折射率介電層之光學特性亦難以變化。因此,可容易穩定地製造透明導電層23難以被視認之光學構件1。 On the other hand, in the optical member 1 having a refractive index of 1.65 to 1.95 in the high refractive index dielectric layer 21, the transparent conductive layer 23 can be provided by providing the high refractive index dielectric layer 21 having a thickness of 10 nm or more. The difference in light reflectance between the region and the region where the transparent conductive layer 23 is not provided becomes small. Moreover, since the thickness of the high refractive index dielectric layer 21 can be made 10 nm or more, it is easy to form the high refractive index dielectric layer 21 having a uniform thickness. That is, when the thickness of the formed high refractive index dielectric layer is deviated from the design value, the optical characteristics of the high refractive index dielectric layer are also difficult to change. Therefore, the optical member 1 in which the transparent conductive layer 23 is hard to be seen can be easily and stably manufactured.

自使透明導電層23更難以被視認之觀點考慮,高折射率介電層21之折射率較佳為1.7以上,更佳為1.75以上。 The refractive index of the high refractive index dielectric layer 21 is preferably 1.7 or more, and more preferably 1.75 or more, from the viewpoint that the transparent conductive layer 23 is more difficult to be visually recognized.

如圖2所示,於在高折射率介電層21之上以覆蓋透明導電層23之方式設置反射抑制層33之情形時,設置有透明導電層23之區域與未設置透明導電層23之區域之反射率之比例相對變大。因此,為了使設置有透明導電層23之區域與未設置透明導電層23之區域之光反射率之差容易更明顯地被視認,更佳為使高折射率介電層21之折射率為1.65~1.95。 As shown in FIG. 2, in the case where the reflection suppressing layer 33 is provided over the high refractive index dielectric layer 21 so as to cover the transparent conductive layer 23, the region in which the transparent conductive layer 23 is provided and the transparent conductive layer 23 are not provided. The ratio of the reflectance of the area is relatively large. Therefore, in order to make the difference in light reflectance between the region in which the transparent conductive layer 23 is provided and the region in which the transparent conductive layer 23 is not provided is more clearly recognized, it is more preferable that the refractive index of the high refractive index dielectric layer 21 is 1.65. ~1.95.

再者,與光學構件1不同,亦考慮依序積層低折射率介電層、高折射率介電層及透明導電層。然而,於該情形時,無法使設置有透明導電層之區域與未設置透明導電層之區域中之光反射率之差充分小。 Further, unlike the optical member 1, it is also considered to sequentially laminate a low refractive index dielectric layer, a high refractive index dielectric layer, and a transparent conductive layer. However, in this case, the difference in light reflectance between the region in which the transparent conductive layer is provided and the region in which the transparent conductive layer is not provided cannot be sufficiently made small.

圖4係本發明之另一實施形態之附透明導電層之光學構件2之略圖性剖面圖。本實施形態中,與圖1所示之實施形態同樣地,包括基材10、設置於基材10之上之高折射率介電層21、設置於高折射率介電層21之上之低折射率介電層22、及設置於低折射率介電層22之上之透明電極層23。本實施形態中,如圖4所示,進而,於低折射率介電層22與透明電極層23之間,設置有第2高折射率介電層24及第2低折射率 介電層25。第2高折射率介電層24設置於低折射率介電層22之上,第2低折射率介電層25設置於第2高折射率介電層24之上。 Fig. 4 is a schematic cross-sectional view showing an optical member 2 with a transparent conductive layer according to another embodiment of the present invention. In the present embodiment, as in the embodiment shown in FIG. 1, the substrate 10, the high refractive index dielectric layer 21 provided on the substrate 10, and the low refractive index dielectric layer 21 are provided. The refractive index dielectric layer 22 and the transparent electrode layer 23 disposed on the low refractive index dielectric layer 22. In the present embodiment, as shown in FIG. 4, a second high refractive index dielectric layer 24 and a second low refractive index are provided between the low refractive index dielectric layer 22 and the transparent electrode layer 23. Dielectric layer 25. The second high refractive index dielectric layer 24 is disposed on the low refractive index dielectric layer 22, and the second low refractive index dielectric layer 25 is disposed on the second high refractive index dielectric layer 24.

藉由進而包括第2高折射率介電層24及第2低折射率介電層25,可使透明導電層23進而難以被視認。 Further, by including the second high refractive index dielectric layer 24 and the second low refractive index dielectric layer 25, the transparent conductive layer 23 can be further difficult to be visually recognized.

第2高折射率介電層24之折射率較佳為1.65以上,更佳為1.7以上,進而較佳為1.75以上。第2高折射率介電層24之折射率較佳為2.2以下,更佳為1.9以下,進而較佳為1.85以下。如上所述,高折射率介電層21之折射率較佳為第2高折射率介電層24之折射率以下。因此,第2高折射率介電層24之折射率較佳為高折射率介電層21之折射率以上。 The refractive index of the second high refractive index dielectric layer 24 is preferably 1.65 or more, more preferably 1.7 or more, still more preferably 1.75 or more. The refractive index of the second high refractive index dielectric layer 24 is preferably 2.2 or less, more preferably 1.9 or less, still more preferably 1.85 or less. As described above, the refractive index of the high refractive index dielectric layer 21 is preferably equal to or lower than the refractive index of the second high refractive index dielectric layer 24. Therefore, the refractive index of the second high refractive index dielectric layer 24 is preferably equal to or higher than the refractive index of the high refractive index dielectric layer 21.

第2高折射率介電層24例如可藉由複合氧化物而構成,該複合氧化物包含選自由Ta、Nb、Zr及Ti組成之群中之至少一種與Si。作為包含選自由Ta、Nb、Zr及Ti組成之群中之至少一種與Si之複合氧化物之具體例,可列舉Nb與Si之複合氧化物、Ti與Si之複合氧化物、Zr與Si之複合氧化物、Ta與Si之複合氧化物等。第2高折射率介電層24較佳為包括選自由Ta、Nb、Zr及Ti組成之群中之至少一種與Si之原子比(選自由Ta、Nb、Zr及Ti組成之群中之至少一種:Si)為15:85~80:20之複合氧化物,更佳為包括該原子比為25:75~70:30之複合氧化物。 The second high refractive index dielectric layer 24 can be formed, for example, by a composite oxide containing at least one selected from the group consisting of Ta, Nb, Zr, and Ti and Si. Specific examples of the composite oxide containing at least one selected from the group consisting of Ta, Nb, Zr, and Ti and Si include a composite oxide of Nb and Si, a composite oxide of Ti and Si, and Zr and Si. A composite oxide, a composite oxide of Ta and Si, or the like. The second high refractive index dielectric layer 24 preferably includes at least one selected from the group consisting of Ta, Nb, Zr, and Ti and an atomic ratio of Si (selected from at least a group consisting of Ta, Nb, Zr, and Ti) A: Si) is a composite oxide of 15:85 to 80:20, more preferably a composite oxide having an atomic ratio of 25:75 to 70:30.

第2高折射率介電層24之厚度較佳為10nm以上,更佳為12nm以上。第2高折射率介電層24之厚度較佳為40nm以下,更佳為35nm以下。 The thickness of the second high refractive index dielectric layer 24 is preferably 10 nm or more, and more preferably 12 nm or more. The thickness of the second high refractive index dielectric layer 24 is preferably 40 nm or less, more preferably 35 nm or less.

第2低折射率介電層25之折射率低於透明導電層23之折射率,且低於高折射率介電層21之折射率,且低於第2高折射率介電層24之折射率。第2低折射率介電層25之折射率較佳為1.6以下,更佳為1.55以下。第2低折射率介電層25之折射率通常為1.38以上。 The refractive index of the second low refractive index dielectric layer 25 is lower than the refractive index of the transparent conductive layer 23 and lower than the refractive index of the high refractive index dielectric layer 21, and lower than the refractive index of the second high refractive index dielectric layer 24. rate. The refractive index of the second low refractive index dielectric layer 25 is preferably 1.6 or less, more preferably 1.55 or less. The refractive index of the second low refractive index dielectric layer 25 is usually 1.38 or more.

第2低折射率介電層25例如可由氧化矽、氟化鎂、氟化鋇等而構成。第2低折射率介電層25之厚度較佳為10nm以上,更佳為20nm以上。第2低折射率介電層25之厚度較佳為60nm以下,更佳為55nm以下。 The second low refractive index dielectric layer 25 can be made of, for example, yttrium oxide, magnesium fluoride, barium fluoride or the like. The thickness of the second low refractive index dielectric layer 25 is preferably 10 nm or more, and more preferably 20 nm or more. The thickness of the second low refractive index dielectric layer 25 is preferably 60 nm or less, more preferably 55 nm or less.

圖5係表示光學構件2之使用態樣之一例之略圖性剖面圖。 Fig. 5 is a schematic cross-sectional view showing an example of the use of the optical member 2.

如圖5所示,於低折射率介電層22與透明電極層23之間,設置有第2高折射率介電層24及第2低折射率介電層25,除此以外,與圖2所示之光學構件1之使用態樣相同。於第2高折射率介電層24之上,以覆蓋透明導電層23之方式設置有反射抑制層33。 As shown in FIG. 5, the second high refractive index dielectric layer 24 and the second low refractive index dielectric layer 25 are provided between the low refractive index dielectric layer 22 and the transparent electrode layer 23, and other figures are shown. The optical member 1 shown in Fig. 2 is used in the same manner. A reflection suppressing layer 33 is provided on the second high refractive index dielectric layer 24 so as to cover the transparent conductive layer 23.

高折射率介電層21、第2高折射率介電層24、低折射率介電層22及第2低折射率介電層25之各者之厚度及折射率以與未設置高折射率介電層21、第2高折射率介電層24、低折射率介電層22及第2低折射率介電層25之情形相比,設置有透明導電層23之區域中之光反射率與未設置透明導電層23之區域中之光反射率之差變小之方式進行設定。較佳為,高折射率介電層21、第2高折射率介電層24、低折射率介電層22及第2低折射率介電層25之各者之厚度及折射率係於可見波長區域(400nm~800nm),以設置有透明導電層23之區域中之光反射率與未設置透明導電層23之區域中之光反射率之差成為最小之方式進行設定。此係因為透明導電層23難以被視認。較佳為,高折射率介電層21、第2高折射率介電層24、低折射率介電層22及第2低折射率介電層25之各者之厚度及折射率係於可見波長區域(400nm~800nm),以設置有透明導電層23之區域中之光反射率與未設置透明導電層23之區域中之光反射率之差成為0.5%以下之方式進行設置,更佳為以該差成為0.3%以下之方式進行設置。 The thickness and refractive index of each of the high refractive index dielectric layer 21, the second high refractive index dielectric layer 24, the low refractive index dielectric layer 22, and the second low refractive index dielectric layer 25 are not set to a high refractive index The light reflectance in the region where the transparent conductive layer 23 is provided compared to the case where the dielectric layer 21, the second high refractive index dielectric layer 24, the low refractive index dielectric layer 22, and the second low refractive index dielectric layer 25 are provided The setting is made such that the difference in light reflectance in the region where the transparent conductive layer 23 is not provided becomes small. Preferably, the thickness and refractive index of each of the high refractive index dielectric layer 21, the second high refractive index dielectric layer 24, the low refractive index dielectric layer 22, and the second low refractive index dielectric layer 25 are visible. The wavelength region (400 nm to 800 nm) is set such that the difference between the light reflectance in the region where the transparent conductive layer 23 is provided and the light reflectance in the region where the transparent conductive layer 23 is not provided is minimized. This is because the transparent conductive layer 23 is difficult to be visually recognized. Preferably, the thickness and refractive index of each of the high refractive index dielectric layer 21, the second high refractive index dielectric layer 24, the low refractive index dielectric layer 22, and the second low refractive index dielectric layer 25 are visible. The wavelength region (400 nm to 800 nm) is set so that the difference between the light reflectance in the region where the transparent conductive layer 23 is provided and the light reflectance in the region where the transparent conductive layer 23 is not provided is 0.5% or less, and more preferably The setting is performed such that the difference is 0.3% or less.

下述表5~表7表示光學構件2之設計例。再者,於表5~表7中,「最大反射率差(400-800nm)」為波長400~800nm之區域之設置有 透明導電層之區域與未設置透明導電層之區域之間之反射率差成為最大之波長之反射率差。「平均反射率差(400-800nm)」為波長400~800nm之區域之設置有透明導電層之區域與未設置透明導電層之區域之間之反射率差之絕對值之平均。表5~表7所示之「最大反射率差(400-800nm)」及「平均反射率差(400-800nm)」係位於透明導電層之上之介質之折射率為1.5之情形時之反射率差之資料。高折射率介電層及第2高折射率介電層之材料之欄所示之比率為原子比。 Tables 5 to 7 below show design examples of the optical member 2. In addition, in Tables 5 to 7, "the maximum reflectance difference (400-800 nm)" is set in the region of the wavelength of 400 to 800 nm. The difference in reflectance between the region of the transparent conductive layer and the region where the transparent conductive layer is not provided is the difference in reflectance at which the wavelength is the largest. The "average reflectance difference (400-800 nm)" is an average of absolute values of reflectance differences between a region in which a transparent conductive layer is provided in a region having a wavelength of 400 to 800 nm and a region in which a transparent conductive layer is not provided. The "maximum reflectance difference (400-800 nm)" and "average reflectance difference (400-800 nm)" shown in Tables 5 to 7 are reflections when the refractive index of the medium above the transparent conductive layer is 1.5. Information on the rate difference. The ratio shown in the column of the material of the high refractive index dielectric layer and the second high refractive index dielectric layer is an atomic ratio.

1‧‧‧光學構件 1‧‧‧Optical components

10‧‧‧基材 10‧‧‧Substrate

11‧‧‧玻璃板 11‧‧‧ glass plate

12‧‧‧氧化矽層 12‧‧‧Oxide layer

21‧‧‧高折射率介電層 21‧‧‧High refractive index dielectric layer

22‧‧‧低折射率介電層 22‧‧‧Low-refractive-index dielectric layer

23‧‧‧透明導電層 23‧‧‧Transparent conductive layer

Claims (13)

一種附透明導電層之光學構件,其包括:高折射率介電層,其折射率為1.65~1.95;透明導電層,其配置於上述高折射率介電層之上,且經圖案化;及低折射率介電層,其配置於上述透明導電層與上述高折射率介電層之間,且折射率較上述透明導電層及上述高折射率介電層之各者更低。 An optical member with a transparent conductive layer, comprising: a high refractive index dielectric layer having a refractive index of 1.65 to 1.95; a transparent conductive layer disposed on the high refractive index dielectric layer and patterned; The low refractive index dielectric layer is disposed between the transparent conductive layer and the high refractive index dielectric layer, and has a lower refractive index than each of the transparent conductive layer and the high refractive index dielectric layer. 如請求項1之附透明導電層之光學構件,其進而包括:第2高折射率介電層,其配置於上述透明導電層與上述低折射率介電層之間,且折射率為1.65以上;及第2低折射率介電層,其配置於上述透明導電層與上述第2高折射率介電層之間,且折射率較上述透明導電層、上述高折射率介電層及上述第2高折射率介電層之各者更低。 The optical member with a transparent conductive layer according to claim 1, further comprising: a second high refractive index dielectric layer disposed between the transparent conductive layer and the low refractive index dielectric layer and having a refractive index of 1.65 or more And a second low refractive index dielectric layer disposed between the transparent conductive layer and the second high refractive index dielectric layer, and having a refractive index higher than the transparent conductive layer, the high refractive index dielectric layer, and the first 2 Each of the high refractive index dielectric layers is lower. 如請求項2之附透明導電層之光學構件,其中上述高折射率介電層之折射率為上述第2高折射率介電層之折射率以下。 An optical member comprising a transparent conductive layer according to claim 2, wherein a refractive index of said high refractive index dielectric layer is lower than a refractive index of said second high refractive index dielectric layer. 如請求項1至3中任一項之附透明導電層之光學構件,其中上述高折射率介電層及/或上述第2高折射率介電層之厚度為10nm以上。 The optical member with a transparent conductive layer according to any one of claims 1 to 3, wherein the high refractive index dielectric layer and/or the second high refractive index dielectric layer has a thickness of 10 nm or more. 如請求項1至3中任一項之附透明導電層之光學構件,其中上述高折射率介電層及/或上述第2高折射率介電層之折射率為1.7以上。 The optical member with a transparent conductive layer according to any one of claims 1 to 3, wherein the high refractive index dielectric layer and/or the second high refractive index dielectric layer has a refractive index of 1.7 or more. 如請求項1至3中任一項之附透明導電層之光學構件,其中上述高折射率介電層及/或上述第2高折射率介電層包括複合氧化物,該複合氧化物包含選自由Ta、Nb、Zr及Ti所組成之群中之至少 一種與Si。 The optical member with a transparent conductive layer according to any one of claims 1 to 3, wherein the high refractive index dielectric layer and/or the second high refractive index dielectric layer comprises a composite oxide, the composite oxide comprising At least one of the groups consisting of free Ta, Nb, Zr, and Ti One with Si. 如請求項1至3中任一項之附透明導電層之光學構件,其中上述低折射率介電層及/或上述第2低折射率介電層之折射率為1.6以下。 The optical member with a transparent conductive layer according to any one of claims 1 to 3, wherein the low refractive index dielectric layer and/or the second low refractive index dielectric layer has a refractive index of 1.6 or less. 如請求項1至3中任一項之附透明導電層之光學構件,其中上述低折射率介電層及/或上述第2低折射率介電層包括氧化矽。 The optical member with a transparent conductive layer according to any one of claims 1 to 3, wherein the low refractive index dielectric layer and/or the second low refractive index dielectric layer comprises ruthenium oxide. 如請求項1至3中任一項之附透明導電層之光學構件,其中上述低折射率介電層及/或上述第2低折射率介電層之厚度為10nm以上。 The optical member with a transparent conductive layer according to any one of claims 1 to 3, wherein the low refractive index dielectric layer and/or the second low refractive index dielectric layer has a thickness of 10 nm or more. 如請求項1至3中任一項之附透明導電層之光學構件,其中上述透明導電層之折射率為1.7~2.2。 The optical member with a transparent conductive layer according to any one of claims 1 to 3, wherein the transparent conductive layer has a refractive index of 1.7 to 2.2. 如請求項1至3中任一項之附透明導電層之光學構件,其中上述透明導電層之厚度為15nm~200nm。 The optical member with a transparent conductive layer according to any one of claims 1 to 3, wherein the transparent conductive layer has a thickness of 15 nm to 200 nm. 如請求項1至3中任一項之附透明導電層之光學構件,其中上述高折射率介電層、上述第2高折射率介電層、上述低折射率介電層及上述第2低折射率介電層之各者之厚度及折射率,以與未設置上述高折射率介電層、上述第2高折射率介電層、上述低折射率介電層及上述第2低折射率介電層之情形相比,設置有上述透明導電層之區域中之光反射率與未設置上述透明導電層之區域中之光反射率之差變小之方式進行設定。 The optical member with a transparent conductive layer according to any one of claims 1 to 3, wherein said high refractive index dielectric layer, said second high refractive index dielectric layer, said low refractive index dielectric layer, and said second low a thickness and a refractive index of each of the refractive index dielectric layers, and the high refractive index dielectric layer, the second high refractive index dielectric layer, the low refractive index dielectric layer, and the second low refractive index are not provided In the case of the dielectric layer, the difference between the light reflectance in the region where the transparent conductive layer is provided and the light reflectance in the region where the transparent conductive layer is not provided is set to be smaller. 如請求項1至3中任一項之附透明導電層之光學構件,其中於上述高折射率介電層或上述第2高折射率介電層之上,以覆蓋上述透明導電層之方式配置反射抑制層。 The optical member with a transparent conductive layer according to any one of claims 1 to 3, wherein the high refractive index dielectric layer or the second high refractive index dielectric layer is disposed over the transparent conductive layer Reflection suppression layer.
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