TW201417921A - Laser line beam improvement apparatus and laser processing apparatus - Google Patents
Laser line beam improvement apparatus and laser processing apparatus Download PDFInfo
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Abstract
Description
本發明是有關於一種改善線光束(line beam)的強度分佈的雷射(laser)線光束改善裝置以及具備上述雷射線光束改善裝置的雷射處理裝置。 The present invention relates to a laser line beam improving device for improving the intensity distribution of a line beam and a laser processing device including the above-described lightning beam improving device.
於非晶質半導體的結晶化或半導體雜質的活化等時，對被處理物照射雷射而進行退火(anneal)的方法正被實用化。於該雷射退火處理中，經由光學系統將雷射的光束形狀整形為規定形狀，且使光束強度於光束截面上一致(頂部平坦(top flat)：平坦部)，進而視需要使光束聚光後照射至被處理物。 In the case of crystallization of an amorphous semiconductor, activation of a semiconductor impurity, or the like, a method of irradiating a target with a laser and annealing it is being put into practical use. In the laser annealing process, the beam shape of the laser beam is shaped into a predetermined shape via an optical system, and the beam intensity is uniform in the beam cross section (top flat: flat portion), and the beam is concentrated as needed. After that, it is irradiated to the object to be treated.
作為光束形狀的一種，已知有於光束截面觀察下具有短軸寬度與長軸寬度的線光束形狀，藉由一邊掃描該線光束一邊照射至被處理物，而可高效率地總括處理被處理物的寬廣面積。但，即便為頂部平坦的線光束形狀，亦會因經由各種光學構件等，而於短軸方向及長軸方向的緣部具有能量(energy)強度朝向外側而減少的部分(亦稱為陡峭部(steepness))。於短軸側，藉由聚光等而使光束寬度變小，藉此陡峭部本身的寬度亦變小，並且利用 重疊(over lap)照射於短軸方向上進行掃描，故而因陡峭部照射所引起的影響得以減輕。另一方面，於長軸側，陡峭部會以具有大寬度的狀態進行照射，且具有相對於短軸方向而通常為250倍左右的寬度。經上述長軸側的陡峭部照射的被處理物的部分是以與經平坦部照射的部分不同的能量強度被照射雷射，從而處理狀態不同。因此，經長軸側的陡峭部照射的被處理物的部分通常不會作為製品而使用。 As one of the beam shapes, a line beam shape having a short axis width and a long axis width observed in a cross section of a light beam is known, and by irradiating the object to be processed while scanning the line beam, the collective processing can be efficiently processed. The wide area of the object. However, even in the shape of a line beam having a flat top portion, the energy intensity is reduced toward the outer side in the short-axis direction and the long-axis direction at the edge portions in the short-axis direction and the long-axis direction (also referred to as a steep portion). (steepness)). On the short axis side, the beam width is made smaller by condensing light or the like, whereby the width of the steep portion itself is also reduced, and the use is utilized. Overlap is performed by scanning in the short-axis direction, so that the influence due to the steep portion illumination is alleviated. On the other hand, on the long axis side, the steep portion is irradiated in a state having a large width, and has a width of about 250 times with respect to the short-axis direction. The portion of the object to be processed that is irradiated through the steep portion on the long axis side is irradiated with laser light at a different energy intensity from the portion irradiated with the flat portion, and the processing state is different. Therefore, the portion of the workpiece that is irradiated through the steep portion on the long axis side is generally not used as a product.
另外，提出有配置將相當於陡峭部的衰減部分去除或減少的狹縫(slit)的技術(例如參照專利文獻1)。 In addition, a technique of arranging a slit that removes or reduces the attenuation portion corresponding to the steep portion has been proposed (for example, refer to Patent Document 1).
穿透該狹縫的線光束的陡峭部被去除或得以減少，對於受到該線光束的照射的被處理物，可減小陡峭部的照射區域，且只要品質上容許，則可包含陡峭部的照射區域在內進行製品化。 The steep portion of the line beam that penetrates the slit is removed or reduced, and the object to be irradiated by the line beam can be reduced in the irradiation area of the steep portion, and can include the steep portion as long as the quality is acceptable. Productization is carried out in the area of irradiation.
[先前技術文獻] [Previous Technical Literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本專利特開平2002-252455號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-252455
且說，穿透狹縫的線光束於穿透後亦會因繞射等而進一步產生陡峭部，且穿透後的距離越長，陡峭部越會擴展而使寬度變大。因此，狹縫越靠近被處理物越能減小陡峭部的寬度。 In addition, the line beam penetrating the slit may further generate a steep portion due to diffraction or the like after the penetration, and the longer the distance after the penetration, the more the steep portion expands and the width becomes larger. Therefore, the closer the slit is to the object to be processed, the smaller the width of the steep portion can be reduced.
然而，線光束通常是於短軸側聚光後照射至被處理物，從而越靠近被處理物，能量密度(energy density)越高，若將狹縫配置於靠近被處理物的位置，則狹縫容易產生損傷(damage)， 從而耐久性顯著降低。而且，自受到損傷的狹縫會產生微細的碎片，而有作為污染物(contamination)混入至被處理物之虞。尤其是脈衝雷射(pulsed laser)與連續振盪雷射相比，每單位時間的能量密度較高，從而上述問題變得顯著。另一方面，若將狹縫配置於遠離被處理物的位置，則聚光的程度小，短軸寬度亦相對較大，因此能量密度相對較小，而可減小對狹縫的損傷。然而，若狹縫位於遠離被處理物的位置，則產生於穿透狹縫後的線光束的陡峭部隨後會大幅擴展，從而陡峭部的寬度變大，導致陡峭部遮蔽的效果變小。 However, the line beam is usually condensed on the short-axis side and then irradiated to the object to be processed, so that the closer to the object to be processed, the higher the energy density, and if the slit is placed close to the object to be processed, the line is narrow. The seam is prone to damage, Thereby the durability is significantly reduced. Moreover, fine fragments are generated from the damaged slit, and there is a contamination which is mixed into the object to be treated. In particular, a pulsed laser has a higher energy density per unit time than a continuously oscillating laser, and the above problem becomes remarkable. On the other hand, when the slit is disposed at a position away from the workpiece, the degree of condensing is small, and the width of the minor axis is relatively large. Therefore, the energy density is relatively small, and damage to the slit can be reduced. However, if the slit is located away from the object to be processed, the steep portion of the line beam which is generated after the penetrating slit is then greatly expanded, so that the width of the steep portion becomes large, and the effect of blocking the steep portion becomes small.
另外，在進行雷射處理且於半導體基板確保多個面板(panel)區域的情況下，是以使上述陡峭部位於面板間的間隙內的方式進行照射。面板間的間隙越小，越能夠使可自一片半導體基板切出的面板數量增多，因此有欲縮小陡峭部的寬度以減小面板間的間隙的要求。而且，最近由於高效率地形成電晶體(transistor)，故而對經減小電晶體區域(亦包含預定區域在內)的間隔的半導體的線光束照射的要求不斷增加。於該線光束照射中，必須使陡峭部的照射區域位於電晶體區域的間隔內，在此情況下亦有欲縮小陡峭部的寬度的要求。 Further, when the laser processing is performed and a plurality of panel regions are secured to the semiconductor substrate, the steep portions are irradiated so as to be positioned in the gaps between the panels. The smaller the gap between the panels, the more the number of panels that can be cut out from one semiconductor substrate can be increased. Therefore, there is a need to reduce the width of the steep portions to reduce the gap between the panels. Moreover, recently, since a transistor is formed efficiently, the demand for line beam irradiation of a semiconductor having a reduced interval of a transistor region (including a predetermined region) is increasing. In the irradiation of the line beam, the irradiation region of the steep portion must be located in the interval of the transistor region, and in this case, there is also a demand for narrowing the width of the steep portion.
然而，先前的狹縫難以於抑制狹縫的損傷的同時應對上述各要求。 However, the previous slit is difficult to suppress the damage of the slit while meeting the above respective requirements.
本發明是以上述情況為背景而完成，目的在於提供一種可減小遮蔽部的損傷，並且有效地減少於線光束所產生的陡峭部的雷射線光束改善裝置以及雷射處理裝置。 The present invention has been made in view of the above circumstances, and an object thereof is to provide a lightning beam improving device and a laser processing device which can reduce damage of a shielding portion and effectively reduce a steep portion generated by a line beam.
即，本發明的雷射線光束改善裝置中的第一發明的特徵在於，在照射至被處理物的線光束的光程上包括：第1遮蔽部，配置於對於上述被處理物相對較遠的位置，且遮蔽上述線光束的長軸端部的穿透；及第2遮蔽部，配置於對於上述被處理物相對較近的位置，且進一步遮蔽經上述第1遮蔽部遮蔽長軸端部的穿透之後的上述線光束的長軸端部的穿透。 In the first aspect of the invention, the lightning beam improving apparatus of the present invention is characterized in that, in the optical path of the line beam irradiated to the object to be processed, the first shielding portion is disposed relatively far from the object to be processed. a position that blocks the penetration of the long-axis end of the line beam; and the second shielding portion is disposed at a position relatively close to the object to be processed, and further shields the end portion of the long axis by the first shielding portion Penetration of the long-axis end of the above-mentioned line beam after penetration.
第二發明的雷射線光束改善裝置的特徵在於：於上述第一發明中，上述線光束於光束強度分佈(profile)中包括平坦部以及位於短軸端部及長軸端部的陡峭部。 According to a first aspect of the invention, in the first aspect of the invention, the line beam includes a flat portion and a steep portion at the end portion of the short axis and the end portion of the long axis in the beam intensity profile.
第三發明的雷射線光束改善裝置的特徵在於：於上述第二發明中，上述平坦部是上述光束強度分佈中的最大強度的97%以上的區域。 According to a second aspect of the invention, in the thirteenth aspect of the invention, the flat portion is a region having a maximum intensity of 97% or more of the beam intensity distribution.
第四發明的雷射線光束改善裝置的特徵在於：於上述第二發明中，上述第1遮蔽部遮蔽上述線光束的長軸端部的陡峭部與上述平坦部的長軸側端部的穿透。 According to a second aspect of the invention, in the first aspect of the invention, the first shielding portion shields a steep portion of a long-axis end portion of the line beam from a distal end portion of the flat portion .
第五發明的雷射線光束改善裝置的特徵在於：於上述第一發明至第四發明的任一項中，上述第2遮蔽部於與上述第1遮蔽部相同的位置或外側對上述線光束的長軸方向進行上述遮蔽。 In the above-described first to fourth aspects of the invention, the second shielding portion is configured to be opposite to the first shielding portion at the same position or outside of the line beam. The above shading is performed in the long axis direction.
第六發明的雷射線光束改善裝置的特徵在於：於上述第一發明至第五發明的任一項中，上述第2遮蔽部包括多個遮蔽部，上述多個遮蔽部對於上述被處理物的相對遠近位置不同，且進一步遮蔽經前段的遮蔽部遮蔽上述線光束的長軸端部的穿透之後的上述線光束的長軸端部的穿透。 In the first aspect of the invention, the second shielding unit includes a plurality of shielding portions, and the plurality of shielding portions are for the object to be processed. The relatively long-distance position is different, and further shielding the penetration of the long-axis end portion of the line beam after the penetration of the long-axis end portion of the line beam by the shielding portion of the front stage.
第七發明的雷射線光束改善裝置的特徵在於：於上述第 六發明中，於上述多個遮蔽部中，後段的遮蔽部於與前段的遮蔽部相同的位置或外側進行上述遮蔽 A lightning beam improving device according to a seventh invention is characterized in that: According to a sixth aspect of the invention, in the plurality of shielding portions, the shielding portion of the rear stage performs the shielding at the same position or outside of the shielding portion of the front stage
第八發明的雷射處理裝置的特徵在於，包括：雷射光源，輸出雷射；光學系統，將上述雷射的光束形狀整形為線光束並予以導引；處理室，設置著被處理物，讓經上述光學系統導引的雷射通過導入窗而導入，並照射至上述被處理物；及如上述第一發明至第七發明中任一項所述的本發明的雷射線光束改善裝置；且上述線光束改善裝置的第1遮蔽部配置於上述處理室外且在上述光學系統的最終段的聚光透鏡(lens)與上述導入窗之間，上述線光束改善裝置的第2遮蔽部配置於上述導入窗的內側的上述處理室內。 A laser processing apparatus according to an eighth aspect of the present invention includes: a laser light source that outputs a laser beam; an optical system that shapes a beam shape of the laser beam into a line beam and guides the same; and the processing chamber is provided with a processed object; And a laser beam guided by the optical system is introduced through the introduction window and irradiated to the object to be processed; and the lightning beam improving device of the invention according to any one of the first to seventh inventions; And the first shielding portion of the line beam improving device is disposed outside the processing chamber between the collecting lens of the final stage of the optical system and the introduction window, and the second shielding portion of the line beam improving device is disposed The inside of the processing chamber inside the introduction window.
第九發明的雷射處理裝置的特徵在於：於上述第八發明中，對被處理物照射雷射而用於上述被處理物的結晶化或活化處理。 According to a ninth aspect of the invention, in the eighth aspect of the invention, the object to be processed is irradiated with a laser for crystallization or activation treatment of the object to be processed.
根據本發明，於短軸側的聚光程度小且能量密度不高的階段，藉由第1遮蔽部遮蔽線光束的長軸端部的穿透，進而，藉由第2遮蔽部遮蔽陡峭部經減少的線光束的長軸端部的穿透，從而有效地減少陡峭部。 According to the present invention, in the stage where the degree of condensing on the short-axis side is small and the energy density is not high, the first shielding portion blocks the penetration of the long-axis end portion of the line beam, and further, the second shielding portion shields the steep portion. The penetration of the long axis end of the reduced line beam, thereby effectively reducing the steep portion.
關於第1遮蔽部，由於短軸側的聚光處於緩和階段，故而可減少對第1遮蔽部的損傷，且實現陡峭部的減少。穿透第1遮蔽部之後擴展的陡峭部與到達第1遮蔽部時的陡峭部相比，擴展變小，針對該陡峭部，藉由利用第2遮蔽部遮蔽線光束的長軸側端部的穿透，而可使該陡峭部成為擴展更小的陡峭部。 In the first shielding portion, since the condensing on the short-axis side is in the mitigation stage, damage to the first shielding portion can be reduced, and the steep portion can be reduced. The steep portion that has spread after passing through the first shielding portion has a smaller spread than the steep portion when the first shielding portion is reached, and the long-side end portion of the line beam is shielded by the second shielding portion with respect to the steep portion. Penetration allows the steep portion to become a steeper portion that expands.
要利用第2遮蔽部進行遮蔽的陡峭部照射至第2遮蔽部的截面積與直接照射至第2遮蔽部的情況相比變小，從而可減小對第2遮蔽部的損傷。而且，第2遮蔽部的遮蔽可僅限於陡峭部的全部或一部分，而可使對第2遮蔽部的照射截面積成為最小限度。穿透第2遮蔽部的線光束由於在靠近被處理物的位置穿透第2遮蔽部，故而於穿透第2遮蔽部之後因繞射等而產生的陡峭部的擴展變小，且於陡峭部的寬度較小的狀態下對被處理部照射線光束。若對陡峭部的長軸方向外側的一部分進行利用第2遮蔽部的遮蔽，則照射至第2遮蔽部的陡峭部的照射能量進一步變小，從而對第2遮蔽部的損傷進一步變小。 The cross-sectional area of the steep portion irradiated by the second shielding portion to the second shielding portion is smaller than the case where the second shielding portion is directly irradiated, and the damage to the second shielding portion can be reduced. Further, the shielding of the second shielding portion can be limited to all or a part of the steep portion, and the irradiation cross-sectional area of the second shielding portion can be minimized. Since the line beam that has penetrated the second shielding portion penetrates the second shielding portion at a position close to the workpiece, the expansion of the steep portion due to diffraction or the like after the second shielding portion is penetrated becomes small and steep. The line to be processed is irradiated to the portion to be processed in a state where the width of the portion is small. When a part of the outer side in the longitudinal direction of the steep portion is shielded by the second shielding portion, the irradiation energy applied to the steep portion of the second shielding portion is further reduced, and the damage to the second shielding portion is further reduced.
線光束具有平坦部且至少於長軸側具有陡峭部，可將平坦部設為包含相對於光束截面的最大能量強度而為97%以上的區域。但，本發明中並不限定於此。於平坦部的兩端部具有陡峭部，該陡峭部的能量強度低於平坦部，且強度朝向外側而逐漸變小。 The line beam has a flat portion and has a steep portion at least on the long axis side, and the flat portion can be a region including 97% or more with respect to the maximum energy intensity of the beam cross section. However, the present invention is not limited to this. The both ends of the flat portion have a steep portion whose energy intensity is lower than that of the flat portion, and the strength gradually decreases toward the outer side.
此外，所謂線光束形狀，是指長軸相對於短軸而具有較大比率的形狀，例如可列舉長軸相對於短軸的比為10以上的形狀。於本發明中，長軸側的長度、短軸側的長度並無特別限定，例如可列舉長軸側的長度為370mm~1300mm，短軸側的長度為100μm~500μm的形狀。 In addition, the shape of the line beam means a shape in which the major axis has a large ratio with respect to the minor axis, and for example, a ratio of the major axis to the minor axis is 10 or more. In the present invention, the length on the long axis side and the length on the short axis side are not particularly limited, and examples thereof include a shape having a length on the long axis side of 370 mm to 1300 mm and a length on the short axis side of 100 μm to 500 μm.
第1遮蔽部與第2遮蔽部是分別阻礙線光束的長軸側端部的穿透，除完全地遮斷以外，亦可為使穿透率減小而減少穿透的遮蔽部。此情況下，穿透率較理想為50%以下。另外，亦可使第1遮蔽部與第2遮蔽部的遮蔽的方法、程度不同。例如亦可利用其中一遮蔽部(例如第1遮蔽部)進行遮斷，利用另一遮蔽部 (例如第2遮蔽部)進行穿透抑制等。 The first shielding portion and the second shielding portion respectively block the penetration of the end portion on the long axis side of the linear light beam, and may be a shielding portion that reduces the penetration and reduces penetration, in addition to being completely blocked. In this case, the transmittance is preferably 50% or less. Further, the method and degree of shielding of the first shielding portion and the second shielding portion may be different. For example, one of the shielding portions (for example, the first shielding portion) may be used for blocking, and another shielding portion may be utilized. (for example, the second shielding portion) performs penetration suppression or the like.
第1遮蔽部只要以至少遮蔽線光束的長軸側兩端部的陡峭部的方式而配置即可，亦可遮蔽陡峭部的外側的一部分。而且，可遮蔽陡峭部的全部及平坦部的一部分以確實地實現陡峭部的減少。對於第1遮蔽部，由於短軸側的聚光度低，故而即便遮蔽平坦部側，對遮蔽部的損傷亦相對較小。 The first shielding portion may be disposed so as to shield at least the steep portions of both end portions on the long axis side of the line light beam, and may shield a part of the outer side of the steep portion. Moreover, all of the steep portions and a part of the flat portion can be shielded to surely reduce the steep portion. In the first shielding portion, since the condensing degree on the short-axis side is low, even if the flat portion side is shielded, the damage to the shielding portion is relatively small.
另外，第2遮蔽部只要以遮蔽穿透第1遮蔽部後的線光束的至少陡峭部的方式而配置即可。此情況下，亦可遮蔽陡峭部的外側的一部分。較佳為只要遮蔽於穿透第1遮蔽部之後所形成的陡峭部即可，可將第1遮蔽部的遮蔽位置與第2遮蔽部的遮蔽位置設為於線光束的長軸方向(例如以長軸方向中心為基準)上相同的位置，或將第2遮蔽部的遮蔽位置設為比第1遮蔽部的遮蔽位置更靠外側。 In addition, the second shielding portion may be disposed so as to shield at least a steep portion of the linear light beam that has penetrated the first shielding portion. In this case, a part of the outer side of the steep portion can also be shielded. Preferably, the shielding portion of the first shielding portion and the shielding position of the second shielding portion may be set to be in the long-axis direction of the line beam (for example, by shielding the steep portion formed after the first shielding portion is penetrated). The center of the long axis direction is the same position in the reference, or the shielding position of the second shielding portion is set to be outside the shielding position of the first shielding portion.
關於第1遮蔽部與第2遮蔽部的光程上的遠近方向的配置位置，只要使第1遮蔽部相對遠離被處理物，使第2遮蔽部相對靠近被處理物即可，相對遠近關係是以被處理物為基準的第1遮蔽部與第2遮蔽部之間的關係。本發明中只要具備上述相對關係，則兩遮蔽部的配置位置並無特別限定，可例示如下配置位置，即，以處理室的雷射光導入窗為基準，將第1遮蔽部置於導入窗的外側，將第2遮蔽部置於導入窗的內側。若將第1遮蔽部置於導入窗的外側，則可於該區域配置於適當位置，若將第2遮蔽部置於導入窗的內側，則能夠以對應於被處理物的方式等而於該區域配置於適當位置。 The arrangement position of the first shielding portion and the second shielding portion in the optical path in the distance direction is such that the first shielding portion is relatively distant from the workpiece, and the second shielding portion is relatively close to the workpiece, and the relative distance is The relationship between the first shielding portion and the second shielding portion based on the workpiece. In the present invention, the arrangement position of the two shielding portions is not particularly limited as long as the relative relationship is provided, and the arrangement position is set such that the first shielding portion is placed in the introduction window based on the laser light introduction window of the processing chamber. On the outer side, the second shielding portion is placed inside the introduction window. When the first shielding portion is placed outside the introduction window, the second shielding portion can be placed at an appropriate position in the region, and when the second shielding portion is placed inside the introduction window, the image can be corresponding to the object to be processed. The area is configured in the appropriate location.
此外，第2遮蔽部亦可包括相對遠近位置不同的多個遮 蔽部。此情況下，可利用前段的遮蔽部遮蔽線光束的陡峭部，利用後段的遮蔽部遮斷於上述穿透後的線光束所產生的陡峭部。 In addition, the second shielding portion may also include a plurality of different shielding positions at different distances Cover. In this case, the steep portion of the line beam can be shielded by the shielding portion of the front stage, and the steep portion generated by the line beam after the penetration can be blocked by the shielding portion of the rear stage.
此情況下，可使後段的遮蔽部於與前段的遮蔽部相同的位置或外側進行上述遮蔽。 In this case, the shielding portion of the rear stage can be shielded at the same position or outside of the shielding portion of the front stage.
如以上所說明，根據本發明，可有效地減少於線光束產生的陡峭部，從而可良好地進行使用該線光束的處理。而且，於在短軸方向將線光束聚光的情況下可減小遮蔽部的損傷。 As described above, according to the present invention, it is possible to effectively reduce the steep portion generated by the line beam, and the processing using the line beam can be performed satisfactorily. Further, in the case where the line beam is concentrated in the short-axis direction, the damage of the shield portion can be reduced.
1‧‧‧雷射退火處理裝置 1‧‧‧Laser annealing treatment device
2‧‧‧處理室 2‧‧‧Processing room
3‧‧‧掃描裝置 3‧‧‧Scanning device
4‧‧‧基台 4‧‧‧Abutment
5‧‧‧基板配置台 5‧‧‧Substrate configuration table
6‧‧‧導入窗 6‧‧‧Introduction window
10‧‧‧脈衝雷射光源 10‧‧‧pulse laser source
11‧‧‧衰減器 11‧‧‧Attenuator
12‧‧‧光學系統 12‧‧‧Optical system
12a‧‧‧均化器 12a‧‧‧Homogenizer
12b‧‧‧反射鏡 12b‧‧‧Mirror
12c‧‧‧聚光透鏡 12c‧‧‧ Concentrating lens
15‧‧‧脈衝雷射 15‧‧‧pulse laser
20‧‧‧第1遮蔽板 20‧‧‧1st shielding board
20a‧‧‧第1穿透間隙 20a‧‧‧1st penetration gap
21‧‧‧第2遮蔽板 21‧‧‧2nd shielding board
21a‧‧‧第2穿透間隙 21a‧‧‧2nd penetration gap
22‧‧‧第3遮蔽板 22‧‧‧3rd shielding board
22a‧‧‧第3穿透間隙 22a‧‧‧3rd penetration gap
25‧‧‧狹縫部 25‧‧‧Slits
100‧‧‧矽膜 100‧‧‧矽膜
150‧‧‧線光束 150‧‧‧Line beam
151‧‧‧平坦部 151‧‧‧ Flat Department
152、153、154、155‧‧‧陡峭部 152, 153, 154, 155‧ ‧ steep
152a‧‧‧陡峭部的長軸方向寬度 152a‧‧‧The width of the long axis in the steep part
圖1是表示本發明的一實施方式的雷射線光束改善裝置以及雷射處理裝置的示意概略圖。 1 is a schematic view showing a lightning beam improving device and a laser processing device according to an embodiment of the present invention.
圖2(a)、圖2(b)、圖2(c)是表示本發明的一實施方式的遮蔽部以及穿透遮蔽部的線光束的示意平面圖。 2(a), 2(b), and 2(c) are schematic plan views showing a shielding unit and a line beam penetrating the shielding unit according to the embodiment of the present invention.
圖3是本發明的一實施方式的穿透遮蔽部的線光束的前視圖。 Fig. 3 is a front elevational view of a line beam passing through a shielding portion according to an embodiment of the present invention.
圖4是本發明的另一實施方式的穿透遮蔽部的線光束的前視圖。 4 is a front elevational view of a line beam penetrating the shielding portion according to another embodiment of the present invention.
圖5是習知的穿透狹縫的線光束的前視圖。 Figure 5 is a front elevational view of a conventional line beam penetrating the slit.
圖6是表示線光束的長軸光束分佈的示意圖。 Fig. 6 is a schematic view showing a long-axis beam distribution of a line beam.
以下，基於隨附圖式，對本發明的一實施方式的雷射線 光束改善裝置以及具備雷射線光束改善裝置的雷射處理裝置進行說明。 Hereinafter, a lightning ray according to an embodiment of the present invention will be described based on the accompanying drawings. A beam improving device and a laser processing device including a lightning beam improving device will be described.
圖1表示相當於雷射處理裝置的雷射退火處理裝置1。雷射退火處理裝置1具備處理室2，於處理室2內具備可於X-Y方向上移動的掃描裝置3，於該掃描裝置3的上部具備基台4。於基台4上，設置著基板配置台5作為平台(stage)。掃描裝置3藉由未圖示的馬達(motor)等而驅動。另外，於處理室2設置著自外部導入脈衝雷射的導入窗6。 Fig. 1 shows a laser annealing treatment apparatus 1 corresponding to a laser processing apparatus. The laser annealing treatment apparatus 1 includes a processing chamber 2, and a scanning device 3 that is movable in the X-Y direction in the processing chamber 2, and a base 4 is provided on the upper portion of the scanning device 3. On the base 4, a substrate placement table 5 is provided as a stage. The scanner device 3 is driven by a motor or the like (not shown). Further, an introduction window 6 for introducing a pulse laser from the outside is provided in the processing chamber 2.
於退火處理時，在該基板配置台5上設置非晶質的矽膜100等作為半導體膜。矽膜100例如以40nm~100nm的厚度(具體而言例如為50nm的厚度)形成於未圖示的基板上。該形成可藉由常用方法而進行，本發明中半導體膜的形成方法並無特別限定。 At the time of the annealing treatment, an amorphous tantalum film 100 or the like is provided on the substrate placing table 5 as a semiconductor film. The ruthenium film 100 is formed on a substrate (not shown) by, for example, a thickness of 40 nm to 100 nm (specifically, a thickness of, for example, 50 nm). This formation can be carried out by a usual method, and the method for forming the semiconductor film in the present invention is not particularly limited.
另外，雖於本實施方式中，是對有關於藉由雷射處理而使非晶質膜結晶化的雷射處理的情況進行說明，但本發明中，雷射處理的內容並不限定於此，例如，亦可使非單晶的半導體膜單晶化，或進行結晶半導體膜的重組。此外，亦可為有關於其他處理的情況，被處理物並不限定於特定物體。 Further, in the present embodiment, the case of the laser treatment for crystallizing the amorphous film by the laser treatment will be described. However, in the present invention, the content of the laser treatment is not limited thereto. For example, the non-single-crystal semiconductor film may be single-crystallized or the crystal semiconductor film may be recombined. Further, in the case of other processing, the object to be processed is not limited to a specific object.
於處理室2的外部，設置著脈衝雷射光源10。該脈衝雷射光源10包含準分子雷射振盪器(excimer laser oscillator)(商品名：LSX315C)，可輸出波長為308nm、重複振盪頻率(repetitive oscillation frequency)為300Hz的脈衝雷射，對於該脈衝雷射光源10，可藉由反饋(feedback)控制而將脈衝雷射的輸出控制為維持於規定範圍內。另外，脈衝雷射光源的類別並不限定於上述 類別。 A pulsed laser source 10 is disposed outside the processing chamber 2. The pulsed laser light source 10 includes an excimer laser oscillator (trade name: LSX315C), and can output a pulsed laser having a wavelength of 308 nm and a repetitive oscillation frequency of 300 Hz. The light source 10 can control the output of the pulsed laser to be maintained within a predetermined range by feedback control. In addition, the type of the pulsed laser light source is not limited to the above. category.
於該脈衝雷射光源10中經脈衝振盪而輸出的脈衝雷射15視需要由衰減器(attenuator)11調整能量密度，並由包含均化器(homogenizer)12a、反射鏡(mirror)12b、聚光透鏡(lens)12c等光學構件的光學系統12實施向線光束形狀的整形或偏向等後，通過設置於處理室2的導入窗6而照射至處理室2內的非晶質的矽膜100。另外，構成光學系統12的光學構件並不限定於上述構件，可包含各種透鏡、鏡面、波導部等。 The pulsed laser 15 outputted by the pulse oscillation in the pulsed laser light source 10 is adjusted by an attenuator 11 as needed, and includes a homogenizer 12a, a mirror 12b, and a poly The optical system 12 of the optical member such as the optical lens 12c performs shaping or deflection of the linear beam shape, and then irradiates the amorphous ruthenium film 100 in the processing chamber 2 through the introduction window 6 provided in the processing chamber 2. . Further, the optical member constituting the optical system 12 is not limited to the above-described members, and may include various lenses, mirror surfaces, waveguide portions, and the like.
此外，於聚光透鏡12c與導入窗6之間，配置著相當於第1遮蔽部的第1遮蔽板20，於處理室2內配置著相當於第2遮蔽部的第2遮蔽板21。如圖2(a)、圖2(b)所示，第1遮蔽板20是以如下方式而配置，即，使成對的兩個遮蔽板的前端相對向，且於成對的兩個遮蔽板之間確保第1穿透間隙20a。該第1穿透間隙20a具有長度為可將脈衝雷射150的長軸方向端部遮蔽的間隙。另外，關於第2遮蔽板21亦相同，第2遮蔽板21是以如下方式而配置，即，使成對的兩個遮蔽板的前端相對向，且於成對的兩個遮蔽板之間確保第2穿透間隙21a。該第2穿透間隙21a具有長度為可將穿透第2遮蔽板21的脈衝雷射150的長軸方向端部遮蔽的間隙。上述第1遮蔽板20、第2遮蔽板21構成本發明的雷射線光束改善器裝置。 Further, between the condensing lens 12c and the introduction window 6, a first shielding plate 20 corresponding to the first shielding portion is disposed, and a second shielding plate 21 corresponding to the second shielding portion is disposed in the processing chamber 2. As shown in Fig. 2 (a) and Fig. 2 (b), the first shielding plate 20 is disposed such that the front ends of the pair of shielding plates face each other and are shielded in pairs. The first penetration gap 20a is secured between the plates. The first penetration gap 20a has a gap that is long enough to shield the end portion of the pulse laser 150 in the longitudinal direction. In addition, the second shielding plate 21 is also the same, and the second shielding plate 21 is disposed such that the front ends of the pair of shielding plates face each other and are secured between the pair of shielding plates. The second penetration gap 21a. The second penetration gap 21a has a gap that is long enough to shield the end portion of the pulse laser 150 that penetrates the second shielding plate 21 in the longitudinal direction. The first shielding plate 20 and the second shielding plate 21 constitute the lightning beam improver device of the present invention.
此外，對於第1遮蔽板20、第2遮蔽板21，可自動或手動地使成對的兩個遮蔽板移動以調整彼此之間的間隙量。 Further, in the first shielding plate 20 and the second shielding plate 21, the pair of shielding plates can be automatically or manually moved to adjust the amount of the gap therebetween.
其次，對上述雷射退火處理裝置1的動作進行說明。 Next, the operation of the above-described laser annealing treatment apparatus 1 will be described.
於脈衝雷射光源10中經脈衝振盪而輸出的脈衝雷射15 例如設為脈衝半寬值為200ns以下的脈衝雷射。但，本發明中並不限定於此。 Pulsed laser 15 outputted by pulse oscillation in pulsed laser source 10 For example, a pulse laser having a pulse half width value of 200 ns or less is used. However, the present invention is not limited to this.
利用衰減器11調整脈衝雷射15的脈衝能量密度。衰減器11被設定為規定的衰減率，以於向半導體膜的照射面上可獲得規定的照射脈衝能量密度的方式調整衰減率。例如於使非晶質的矽膜100結晶化等情況下，能夠以於上述照射面上使能量密度成為100mJ/cm2~500mJ/cm2的方式進行調整。 The pulse energy density of the pulsed laser 15 is adjusted by the attenuator 11. The attenuator 11 is set to a predetermined attenuation rate to adjust the attenuation rate so that a predetermined irradiation pulse energy density can be obtained on the irradiation surface of the semiconductor film. For example, when the amorphous ruthenium film 100 is crystallized, the energy density can be adjusted to 100 mJ/cm 2 to 500 mJ/cm 2 on the irradiation surface.
穿透衰減器11後的脈衝雷射15由光學系統12整形為線光束形狀，進而經由光學系統12的柱狀透鏡(cylindrical lens)等聚光透鏡12c進行聚光而縮小短軸寬度後，導入至設置於處理室2的導入窗6。於圖6示出自光學系統12出射的線光束150的長軸方向上的光束強度分佈。圖6的分佈圖是進行簡化後予以圖示。 The pulsed laser 15 that has passed through the attenuator 11 is shaped into a linear beam shape by the optical system 12, and is condensed by the condensing lens 12c such as a cylindrical lens of the optical system 12 to reduce the short-axis width and then introduced. It is to the introduction window 6 provided in the processing chamber 2. The beam intensity distribution in the long-axis direction of the line beam 150 emerging from the optical system 12 is shown in FIG. The profile of Figure 6 is illustrated after being simplified.
線光束150包括：平坦部151，相對於最大能量強度而為97%以上；及陡峭部152，位於長軸方向的兩端部，具有小於上述平坦部151的能量強度，且能量強度朝向外側而逐漸降低。陡峭部的長軸方向寬度152a並無特別限定，作為達到最大強度的10%之前的寬度，通常具有1mm~25mm左右的寬度。此外，可適當決定將平坦部相對於最大能量強度而設為百分之幾。 The line beam 150 includes a flat portion 151 which is 97% or more with respect to the maximum energy intensity, and a steep portion 152 which is located at both end portions in the long axis direction and has an energy intensity smaller than that of the flat portion 151, and the energy intensity is directed outward. Gradually decreases. The long-axis direction width 152a of the steep portion is not particularly limited, and is generally a width of about 1 mm to 25 mm as a width before reaching 10% of the maximum strength. Further, it is possible to appropriately determine that the flat portion is set to a few percent with respect to the maximum energy intensity.
如圖2、圖3所示，第1遮蔽板20的第1穿透間隙20a是以如下方式而配置，即，對於線光束150遮蔽兩端的陡峭部152且遮蔽至一部分延伸至平坦部151內的位置為止。 As shown in FIGS. 2 and 3 , the first penetration gap 20 a of the first shielding plate 20 is disposed such that the linear beam 150 shields the steep portions 152 at both ends and is shielded to partially extend into the flat portion 151 . The location is up.
如圖2所示，經減少陡峭部152的線光束150是藉由通過第1遮蔽板20的第1穿透間隙20a，而因繞射等，於長軸方向 兩端部形成陡峭部153。但，陡峭部153是遮蔽陡峭部152而形成的部分，因此與陡峭部152相比，擴展寬度變得相當小。 As shown in FIG. 2, the line beam 150 having the reduced steep portion 152 passes through the first penetration gap 20a of the first shielding plate 20, and is caused by diffraction or the like in the long axis direction. A steep portion 153 is formed at both end portions. However, since the steep portion 153 is a portion formed by shielding the steep portion 152, the expanded width becomes considerably smaller than that of the steep portion 152.
具有陡峭部153的線光束150穿透導入窗6而導入至處理室2內。 The line beam 150 having the steep portion 153 penetrates the introduction window 6 and is introduced into the processing chamber 2.
線光束150進一步前進，如圖2(b)、圖3所示，到達第2遮蔽板21。第2遮蔽板21的第2穿透間隙21a的長軸方向寬度長於第1穿透間隙20a的長軸方向寬度，線光束150的陡峭部153位於第2穿透間隙21a的長軸方向兩端。因此，第2遮蔽板21將除了長軸方向內側的陡峭部153的一部分以外的剩餘部分的陡峭部153遮蔽。關於通過第2穿透間隙21a後的線光束150，如圖2(c)、圖3所示，因繞射等而形成陡峭部154，但與陡峭部153相比，擴展寬度進一步變小，從而陡峭部得以減少。 The line beam 150 further advances, as shown in FIGS. 2(b) and 3, and reaches the second shielding plate 21. The width of the second penetration gap 21a of the second shielding plate 21 in the longitudinal direction is longer than the width of the first penetration gap 20a in the longitudinal direction, and the steep portion 153 of the linear beam 150 is located at both ends of the long axis of the second penetration gap 21a. . Therefore, the second shielding plate 21 shields the remaining portion of the steep portion 153 except for a part of the steep portion 153 on the inner side in the longitudinal direction. As shown in FIG. 2(c) and FIG. 3, the line beam 150 passing through the second penetration gap 21a forms a steep portion 154 by diffraction or the like, but the expansion width is further reduced as compared with the steep portion 153. Thereby the steep portion is reduced.
此外，可適當設定利用第2遮蔽板21將陡峭部153遮蔽內側至何種程度。此情況下，可考慮第2遮蔽板21的損傷與欲減少的陡峭部153的擴展寬度而設定遮蔽量。於本例中是與平坦部151的寬度一致地設定第2穿透間隙21a的長軸方向寬度。 Further, it is possible to appropriately set the extent to which the steep portion 153 is shielded inside by the second shielding plate 21. In this case, the amount of shielding can be set in consideration of the damage of the second shielding plate 21 and the expansion width of the steep portion 153 to be reduced. In this example, the width in the longitudinal direction of the second penetration gap 21a is set in accordance with the width of the flat portion 151.
另外，第2遮蔽板21配置於相對靠近矽膜100的位置，從而穿透第2遮蔽板21後的線光束150在陡峭部153未大幅擴展的情況下照射至矽膜100。 Further, the second shielding plate 21 is disposed at a position close to the dam film 100, and the line light beam 150 that has penetrated the second shielding plate 21 is irradiated to the ruthenium film 100 without the large portion 153 being greatly expanded.
於藉由利用掃描裝置3使矽膜100移動而一邊相對地掃描一邊照射該線光束150的退火處理中，照射陡峭部154的區域的寬度相對變小，從而可減小成為無用的區域。另外，即便針對欲縮小電晶體的配置間隔而進行處理的要求，亦可使陡峭部154位於該間隔內，而利用平坦部151使電晶體的區域良好地結晶化。 In the annealing process in which the line light beam 150 is irradiated while being scanned by the scanning device 3, the width of the region irradiated with the steep portion 154 is relatively small, and the useless region can be reduced. Further, even if it is required to perform processing for reducing the arrangement interval of the transistors, the steep portion 154 may be located in the interval, and the flat portion 151 may crystallize the region of the transistor well.
此外，本發明中，上述掃描的速度並不限定於特定的速度，例如可於1mm/秒~100mm/秒的範圍內進行選擇。 Further, in the present invention, the speed of the scanning is not limited to a specific speed, and may be selected, for example, in the range of 1 mm/sec to 100 mm/sec.
此外，於上述實施方式中，對包含相當於第1遮蔽部的第1遮蔽板20與相當於第2遮蔽部的第2遮蔽板21的情況進行了說明，但亦可沿線光束的光程設置多個相當於第2遮蔽部的遮蔽板，利用各遮蔽板進行陡峭部的遮蔽。圖4表示作為第2遮蔽部具有第2遮蔽板21及第3遮蔽板22的示例，本發明中，第2遮蔽部的數量並無特別限定。第3遮蔽板22與另一遮蔽板同樣地，配置為使成對的兩個遮蔽板的前端相對向，且於成對的兩個遮蔽板之間具有間隙，並且於成對的兩個遮蔽板之間確保第3穿透間隙22a。此外，對於第3遮蔽板22，亦可自動或手動地使成對的兩個遮蔽板移動以調整彼此之間的間隙量。 Further, in the above-described embodiment, the case where the first shielding plate 20 corresponding to the first shielding portion and the second shielding plate 21 corresponding to the second shielding portion are included has been described, but the optical path of the line beam may be set. A plurality of shielding plates corresponding to the second shielding portions are shielded by the steep portions by the respective shielding plates. 4 shows an example in which the second shielding plate 21 and the third shielding plate 22 are provided as the second shielding portion. In the present invention, the number of the second shielding portions is not particularly limited. Similarly to the other shielding plate, the third shielding plate 22 is disposed such that the front ends of the pair of shielding plates face each other and have a gap between the pair of shielding plates, and are shielded in pairs. A third penetration gap 22a is secured between the plates. Further, with respect to the third shielding plate 22, the pair of shielding plates may be moved automatically or manually to adjust the amount of the gap between them.
線光束150藉由穿透第3遮蔽板22的第3穿透間隙22a，而可進一步減少陡峭部。 The line beam 150 can further reduce the steep portion by penetrating the third penetration gap 22a of the third shielding plate 22.
此外，對於位於第2遮蔽板21的後段的第3遮蔽板22，可使遮蔽位置內側端為於長軸方向上與第2遮蔽板相同的位置或外側。 Further, the third shielding plate 22 located in the rear stage of the second shielding plate 21 can have the inner end of the shielding position at the same position or the outer side as the second shielding plate in the longitudinal direction.
另一方面，圖5是習知的利用狹縫部25遮蔽線光束150的情況的示例。若將狹縫部25相對遠離矽膜100而配置以減小對狹縫部25的損傷，則於利用狹縫部25遮蔽陡峭部152之後，因繞射而形成的陡峭部153會逐漸擴展，從而陡峭部寬度變大，導致狹縫部的遮蔽效果變小，無法獲得充分的雷射線光束改善效果。 On the other hand, FIG. 5 is an example of a conventional case where the line beam 150 is shielded by the slit portion 25. When the slit portion 25 is disposed away from the ruthenium film 100 to reduce the damage to the slit portion 25, after the steep portion 152 is shielded by the slit portion 25, the steep portion 153 formed by the diffraction gradually expands, thereby forming a steep portion. When the width is increased, the shielding effect of the slit portion is reduced, and a sufficient lightning beam improving effect cannot be obtained.
此外，於上述實施方式中，已對具有遮蔽板作為遮蔽部的情況進行了說明，但亦可由具有狹縫的狹縫部構成遮蔽部。 Further, in the above-described embodiment, the case where the shielding plate is used as the shielding portion has been described, but the shielding portion may be constituted by the slit portion having the slit.
以上，已基於上述實施方式對本發明進行了說明，但本發明並不限定於上述實施方式的內容，只要不脫離本發明的範圍便可進行適當的變更。 The present invention has been described above based on the above-described embodiments, but the present invention is not limited to the above-described embodiments, and can be appropriately modified without departing from the scope of the invention.
1‧‧‧雷射退火處理裝置 1‧‧‧Laser annealing treatment device
2‧‧‧處理室 2‧‧‧Processing room
3‧‧‧掃描裝置 3‧‧‧Scanning device
4‧‧‧基台 4‧‧‧Abutment
5‧‧‧基板配置台 5‧‧‧Substrate configuration table
6‧‧‧導入窗 6‧‧‧Introduction window
10‧‧‧脈衝雷射光源 10‧‧‧pulse laser source
11‧‧‧衰減器 11‧‧‧Attenuator
12‧‧‧光學系統 12‧‧‧Optical system
12a‧‧‧均化器 12a‧‧‧Homogenizer
12b‧‧‧反射鏡 12b‧‧‧Mirror
12c‧‧‧聚光透鏡 12c‧‧‧ Concentrating lens
15‧‧‧脈衝雷射 15‧‧‧pulse laser
20‧‧‧第1遮蔽板 20‧‧‧1st shielding board
21‧‧‧第2遮蔽板 21‧‧‧2nd shielding board
100‧‧‧矽膜 100‧‧‧矽膜
150‧‧‧線光束 150‧‧‧Line beam
Claims (9)
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| JP2012-234158 | 2012-10-23 | ||
| JP2012234158A JP5717146B2 (en) | 2012-10-23 | 2012-10-23 | Laser line beam improving apparatus and laser processing apparatus |
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| TW201417921A true TW201417921A (en) | 2014-05-16 |
| TWI632012B TWI632012B (en) | 2018-08-11 |
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| KR (1) | KR102096829B1 (en) |
| CN (1) | CN104737276B (en) |
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| JP6469455B2 (en) * | 2015-01-21 | 2019-02-13 | 住友重機械工業株式会社 | Laser annealing equipment |
| KR102416569B1 (en) * | 2015-08-27 | 2022-07-04 | 삼성디스플레이 주식회사 | Laser crystalling apparatus |
| KR102435765B1 (en) * | 2015-09-14 | 2022-08-24 | 삼성디스플레이 주식회사 | Laser crystalling apparatus |
| JP6803189B2 (en) | 2016-10-06 | 2020-12-23 | 株式会社日本製鋼所 | Manufacturing method of laser irradiation device and semiconductor device |
| JP7105187B2 (en) * | 2016-10-20 | 2022-07-22 | Ｊｓｗアクティナシステム株式会社 | LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD |
| CN113042922B (en) * | 2021-05-17 | 2023-01-13 | 深圳市艾雷激光科技有限公司 | Laser welding method |
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